KR20170089179A - Insulated gate bipolar transistor module having high temperature cutoff - Google Patents
Insulated gate bipolar transistor module having high temperature cutoff Download PDFInfo
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- KR20170089179A KR20170089179A KR1020160009250A KR20160009250A KR20170089179A KR 20170089179 A KR20170089179 A KR 20170089179A KR 1020160009250 A KR1020160009250 A KR 1020160009250A KR 20160009250 A KR20160009250 A KR 20160009250A KR 20170089179 A KR20170089179 A KR 20170089179A
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- igbt
- terminal
- temperature
- collector terminal
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- 238000010586 diagram Methods 0.000 description 6
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- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- VAWNDNOTGRTLLU-UHFFFAOYSA-N iron molybdenum nickel Chemical compound [Fe].[Ni].[Mo] VAWNDNOTGRTLLU-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Conversion In General (AREA)
Abstract
A first IGBT having a collector terminal connected to a DC voltage input terminal; A second IGBT having a collector terminal connected to the emitter terminal of the first IGBT and receiving an output signal from the connection point thereof and the emitter terminal connected to the ground; And a first IGBT or a second IGBT is connected between the collector terminal of the first IGBT and the DC voltage input terminal so that a signal applied to the collector terminal or the gate terminal of the first IGBT or the gate terminal of the first IGBT is blocked, A collector terminal and a gate terminal of the first IGBT, and a bimetal switch provided at at least one of a collector terminal and a gate terminal of the second IGBT, and an IGBT module having a high temperature shutdown function.
Description
The present invention relates to an IGBT module having a built-in high-temperature shut-off function. More specifically, the IGBT module itself determines whether heat is generated in the IGBT module without a separate main controller. To an IGBT module having a built-in high-temperature shut-off function that can be operated to cut off the power supply.
IGBT (Insulated Gate Bipolar Transistor) is a high-power switching semiconductor device that can quickly perform the switching function to block or pass the electric current.
Switching functions that block or allow the flow of electricity can be implemented with other components or circuits, but those that require precise operation require dedicated components that operate at high speeds and have low power dissipation.
However, the transistors, which are conventional switching semiconductors, have a disadvantage in that they are complicated in circuit configuration and slow in operation speed, and have a disadvantage in that the MOSFETs are low in power and fast in speed. IGBTs are considered to combine the merits of these two products. As a result, IGBTs are used as switching devices in various power conversion devices such as inverters and converters.
The IGBT has a junction type transistor structure in which a metal oxide semiconductor field effect transistor (MOSFET) is embedded in a gate portion. Since the voltage between the gate and the emitter is driven to turn on / off by the input signal, the high-speed switching of large power is possible.
If the IGBT exceeds the limit temperature, it may cause abnormal operation or breakage. Accordingly, a conventional IGBT module is provided with a heat-sink for discharging the heat of the IGBT module in order to prevent it from being damaged by high temperature, and an NTC thermistor (Negative Temperature Coefficient Thermistor) and bimetal are mounted on the heat sink.
An NTC thermistor is a device whose resistance varies with temperature. The main controller can sense the temperature at which the current flowing through the NTC reads the changing resistance value.
Bimetal is a kind of metal switch that is turned on / off at a certain temperature. Whether the bimetal is turned on / off can be electrically recognized by the main controller.
When the main controller senses high temperature through the NTC thermistor or bimetal installed on the heatsink, the power supplied to the IGBT module is cut off to prevent the IGBT module from being damaged.
However, in this case, it is troublesome to provide a main controller for recognizing the operation of the NTC thermistor or the bimetal.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-temperature shutdown function capable of determining whether heat is generated in an IGBT module itself without providing a separate main controller, To provide an integrated IGBT module.
According to an aspect of the present invention, there is provided an IGBT comprising: a first IGBT having a collector terminal connected to a DC voltage input terminal; A second IGBT having a collector terminal connected to the emitter terminal of the first IGBT and receiving an output signal from the connection point thereof and the emitter terminal connected to the ground; And a first IGBT or a second IGBT is connected between the collector terminal of the first IGBT and the DC voltage input terminal so that a signal applied to the collector terminal or the gate terminal of the first IGBT or the gate terminal of the first IGBT is blocked, A collector terminal and a gate terminal of the first IGBT, and a bimetal switch provided at at least one of a collector terminal and a gate terminal of the second IGBT, and an IGBT module having a high temperature shutdown function.
The bimetallic switch may be provided at the gate terminal of the first IGBT and the second IGBT, and at the emitter terminal of the first IGBT and the second IGBT, respectively.
The bimetallic switch may be installed at the gate terminal and the emitter terminal of the first IGBT, respectively.
The bimetallic switch may be installed between the DC voltage input terminal and the collector terminal of the first IGBT.
The bimetallic switch may be installed in the lead frame of the first IGBT or the second IGBT.
The IGBT module having the high-temperature shut-off function includes a first diode disposed between a collector terminal and an emitter terminal of the first IGBT; And a second diode disposed between the collector terminal and the emitter terminal of the second IGBT.
According to the present invention, the IGBT module itself determines whether or not heat is generated in the IGBT module without providing a separate main controller, and when the temperature is over the predetermined temperature, the bimetal switch is electrically opened. Therefore, when the temperature is over the set temperature, the signal applied to the collector terminal or the gate terminal of the IGBT is cut off and the IGBT module itself performs the high temperature operation preventing function.
1 is a circuit diagram of an IGBT module incorporating a high-temperature shutdown function according to an embodiment of the present invention.
2 is a circuit diagram of an IGBT module incorporating a high-temperature shutdown function according to another embodiment of the present invention.
3 is a circuit diagram of an IGBT module incorporating a high-temperature shutdown function according to another embodiment of the present invention.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
1 is a circuit diagram of an IGBT module incorporating a high-temperature shutdown function according to an embodiment of the present invention.
Referring to FIG. 1, an
The collector terminal of the
A
Similarly, a
Each of the
The
The
At this time, the anode of the
The
Accordingly, when the temperature is over the set temperature, the signal applied to the collector terminal or the gate terminal of the
Likewise, when the temperature is over the set temperature, the signal applied to the collector terminal or the gate terminal of the
On the other hand, when the overheat is released below the set temperature, the
2 is a circuit diagram of an IGBT module incorporating a high-temperature shutdown function according to another embodiment of the present invention.
Referring to FIG. 2, the IGBT module with the high-temperature shutdown function according to another embodiment of the present invention includes a first IGBT 210 and a
The collector terminal of the
A first
Here, each of the
At this time, the anode of the
When the temperature is over the preset temperature, the first
Accordingly, when the temperature is over the set temperature, the signal applied to the collector terminal or the gate terminal of the
On the other hand, when the overheat is released to the set temperature or less, the first
3 is a circuit diagram of an IGBT module incorporating a high-temperature shutdown function according to another embodiment of the present invention.
Referring to FIG. 3, the IGBT module having the high-temperature shut-off function according to another embodiment of the present invention includes a
The collector terminal of the
The emitter terminal of the
At this time, the anode of the
When the temperature is over the set temperature, the
Accordingly, when the temperature is over the predetermined temperature, the signal applied to the collector terminal of the
On the other hand, when the overheat is released to the set temperature or less, the
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.
Claims (6)
A second IGBT having a collector terminal connected to the emitter terminal of the first IGBT and receiving an output signal from the connection point thereof and the emitter terminal connected to the ground; And
The collector terminal of the first IGBT or the gate terminal of the second IGBT is cut off when the temperature of the collector of the first IGBT is over the set temperature, A collector terminal and a gate terminal of the first IGBT, and a bimetal switch provided at at least one of a collector terminal and a gate terminal of the second IGBT.
A first diode disposed between the collector terminal and the emitter terminal of the first IGBT; And
And a second diode disposed between the collector terminal and the emitter terminal of the second IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160009250A KR20170089179A (en) | 2016-01-26 | 2016-01-26 | Insulated gate bipolar transistor module having high temperature cutoff |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160009250A KR20170089179A (en) | 2016-01-26 | 2016-01-26 | Insulated gate bipolar transistor module having high temperature cutoff |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170089179A true KR20170089179A (en) | 2017-08-03 |
Family
ID=59655323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160009250A KR20170089179A (en) | 2016-01-26 | 2016-01-26 | Insulated gate bipolar transistor module having high temperature cutoff |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20170089179A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020108172A1 (en) * | 2018-11-30 | 2020-06-04 | 中车时代电动汽车股份有限公司 | Temperature estimation method for power module |
-
2016
- 2016-01-26 KR KR1020160009250A patent/KR20170089179A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020108172A1 (en) * | 2018-11-30 | 2020-06-04 | 中车时代电动汽车股份有限公司 | Temperature estimation method for power module |
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