KR20170082245A - Light emitting diode and light emitting diode package including thereof - Google Patents

Abstract

The present invention provides a light emitting device comprising a substrate, a first conductivity type semiconductor layer disposed on the substrate, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer, Wherein the cross-section is triangular in shape and at least one angle of the cross-section of the substrate layer in the triangular shape is between 80 ° and 100 °.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device and a light emitting device package including the light emitting device.

Embodiments relate to a light emitting device and a light emitting device package including the same.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

Light emitting devices such as light emitting diodes and laser diodes using semiconductor III-V or II-VI compound semiconductors can be used for various colors such as red, green, blue, and ultraviolet Can be implemented. In addition, the light emitting device can realize a white light beam having high efficiency by combining colors using a fluorescent material, and has advantages such as low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, it is possible to replace a transmission module of an optical communication means, a light-emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of a liquid crystal display (LCD) White light emitting diodes (LEDs), automotive headlights, and signals.

The light emitting device may be a nitride semiconductor, such as GaN, as a light emitting structure, and the light emitting structure may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

Since the substrate and the light emitting structure are different materials from each other in the nitride based semiconductor layer grown on the sapphire substrate which is an insulating substrate, the lattice mismatch is very large and the thermal expansion coefficient difference therebetween is very large, Dislocations, melt-backs, cracks, pits, surface morphology defects, and the like can occur.

Among the above-mentioned problems, ELOG (epitaxial lateral over-growth) growth method or Pendeo growth method has been proposed in order to suppress dislocation generation.

1 and 2 are views showing the growth of a conventional nitride-based semiconductor.

1 is a view showing an ELOG growth method. A mask is formed by a silicon oxide (SiO ₂ ) or the like in the middle of a nitride-based semiconductor (GaN) grown on a substrate, and the nitride-based semiconductor grown in the region between the masks is grown not only vertically but also horizontally , Defects can be removed in the region above the mask.

2 is a view showing a Pendeo growth method. A substrate is etched to form a groove, and a nitride-based semiconductor layer is grown on a substrate on which a groove is not formed. At this time, the nitride-based semiconductor grown in a part of the substrate may undergo vertical growth and horizontal growth, and the nitride-based semiconductor layer may be formed in the entire region above the substrate.

However, the growth of the conventional nitride-based semiconductor has the following problems.

In the case of the ELOG method, a tilt occurs due to the friction between the silicon oxide used as a mask and GaN, and a potential may be generated. Further, the nitride semiconductor grows horizontally on the mask, and the time for growing the nitride-based semiconductor may increase in the entire region above the mask.

In the case of the Pendeo method, etching to the sapphire substrate is indispensable, and the process time is increased and it is also difficult to etch an accurate pattern on the sapphire substrate.

As described above, the degradation of the quality of the nitride-based semiconductor layer constituting the light-emitting device can not be solved by the ELOC (epitaxial lateral over-growth) growth method or the Pendeo growth method.

Even if the quality problem of the nitride based semiconductor layer is solved, in the case of the horizontal light emitting device and the flip chip light emitting device, the amount of light extracted through the side surface is larger than the amount of light extracted through the upper surface, The output is lowered.

The light emitting device of the embodiment and the light emitting device package including the same include a light emitting device that reduces crystal defects and thereby provides a light emitting device having excellent quality as well as enhances light output by further increasing the amount of light extracted from the light emitting device, A light emitting device package is provided.

In order to solve the above-described problems, the present invention provides a semiconductor device comprising a substrate, a first conductivity type semiconductor layer disposed on the substrate, an active layer disposed on the first conductivity type semiconductor layer, Wherein a cross section of the active layer is triangular in shape and at least one angle of a cross section of the substrate layer in the triangular shape is 80 DEG to 100 DEG.

The sum of the thicknesses of the substrate, the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer is 60um or more and 300um or less.

In addition, the cross section of the active layer includes a first edge, a second edge, and a third edge, and the first angle formed by the first edge and the second edge is 90 DEG. This is the solution to the problem.

Further, the size of the second angle or the third angle adjacent to the first angle is in the range of 25 DEG to 65 DEG.

The semiconductor light emitting device according to claim 1, further comprising a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, The sum of the thicknesses of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is from 60um to 300um.

The transverse cross-section of the substrate in the triangular shape is triangular in shape and includes a first edge, a first edge and a neighboring second edge, and a third edge adjacent the first edge and the second edge, A light emitting device that satisfies the relational expression is provided as a solution to the problem.

a denotes a first corner, b denotes a second corner, and c denotes a third corner.

Further, the size of the angle formed by the first corner and the third corner is 25 ° to 65 °.

Further, the substrate layer is made of GaN or AlGaN.

In addition, the active layer is made of InGaN / GaN.

A first lead frame and a second lead frame disposed on the package body and electrically separated from each other, and a first lead frame and a second lead frame flip-bonded to the first lead frame and the second lead frame, A light emitting device package including a light emitting element of any one of the claims is provided as a solution to the problem.

The light emitting device package of the embodiment can provide a light emitting device package that is smaller in size than the conventional light emitting device package.

In addition, the light emitting device package of the embodiment can provide a light emitting device package that emits heat generated from the light emitting device to the outside more efficiently.

Also, the light emitting device package of the embodiment can provide a light emitting device package that is miniaturized and has improved light output.

1 and 2 are views showing the growth of a conventional nitride-based semiconductor.
3 shows a light emitting device of one embodiment.
4 shows a light emitting device of another embodiment.
5 shows a light emitting device package of one embodiment.
6 shows a perspective view of the light emitting device of the embodiment.
7 shows the top surface of the light emitting device of the embodiment.
8 is a graph showing the ratio of the first circumferential length to the second circumferential length according to at least one angle of the light emitting device of the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to facilitate understanding of the present invention. However, the embodiments according to the present invention can be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on the "upper" or "on or under" of each element, (on or under) all include that two elements are in direct contact with each other or that one or more other elements are indirectly formed between the two elements. Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

It is also to be understood that the terms "first" and "second", "upper" and "lower", etc., as used below, do not necessarily imply or imply any physical or logical relationship or order between such entities or elements And may be used only to distinguish one entity or element from another entity or element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

3 shows a light emitting device of one embodiment.

The light emitting device 100A shown in FIG. 3 includes a substrate 110, a buffer layer 120, a light emitting structure 130, and first and second electrodes 142 and 144.

The substrate 110 may comprise a conductive material or a non-conductive material. For example, the substrate 110 may include at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs and Si.

Also, the first layer 132, which is the first conductive type semiconductor layer, may be used as the substrate without using a substrate of different materials such as sapphire.

For example, the substrate 110 may include GaN or AlGaN, and may include Al _x Ga _{1 - x} N in detail, and the range of x may be 0 or more and 0.5 or less.

A buffer layer (or transition layer) 120 may be disposed between the substrate 110 and the light emitting structure 130 to improve the thermal expansion coefficient difference and the lattice mismatch between the substrate 110 and the light emitting structure 130. The buffer layer 120 may include, but is not limited to, at least one material selected from the group consisting of Al, In, N, and Ga, for example. Further, the buffer layer 120 may have a single-layer structure or a multi-layer structure.

The light emitting structure 130 includes a first conductive semiconductor layer 132, an active layer 134, and a second conductive semiconductor layer 136 sequentially disposed on the buffer layer 120.

The first conductive semiconductor layer 132 is disposed on the buffer layer 120 and may be formed of a compound semiconductor such as a group III-V or II-VI doped with a first conductive dopant. When the first conductivity type semiconductor layer 132 is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, and Te as an n-type dopant.

For example, the first conductive semiconductor layer 132 may be formed of Al _x In _y Ga _(1-xy) N (0? X?? _{1, 0? Y ? 1} , 0? X + y? 1). ≪ / RTI > The first conductive semiconductor layer 132 may include one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The active layer 134 is disposed on the first conductivity type semiconductor layer 132 and injects electrons or holes injected through the first conductivity type semiconductor layer 132 and the second conductivity type semiconductor layer 136 (Or electrons) of the active layer 134 meet each other to emit light having energy determined by the energy band inherent in the material of the active layer 134. The active layer 134 may be at least one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure Can be formed.

The well layer / barrier layer of the active layer 134 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But are not limited thereto. The well layer may be formed of a material having a band gap energy lower than the band gap energy of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 134. The conductive cladding layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 134. [ For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. Further, the conductive clad layer may be doped with n-type or p-type.

According to the embodiment, the active layer 134 emits light in the ultraviolet wavelength band. Here, the ultraviolet wavelength band means a wavelength band of 100 nm to 400 nm. In particular, the active layer 134 can emit light in a wavelength band of 100 nm to 280 nm.

The second conductive semiconductor layer 136 is disposed on the active layer 134 and may be formed of a semiconductor compound. III-V, or II-VI group. For example, the second conductive type semiconductor layer 136 is _{In x Al y Ga 1 -x- y} N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x + y≤≤1) Lt; RTI ID = 0.0 > of < / RTI > The second conductive type semiconductor layer 136 may be doped with a second conductive type dopant. When the second conductivity type semiconductor layer 136 is a p-type semiconductor layer, the second conductivity type dopant may be a p-type dopant including Mg, Zn, Ca, Sr, Ba and the like.

The first conductive semiconductor layer 132 may be an n-type semiconductor layer and the second conductive semiconductor layer 136 may be a p-type semiconductor layer. Alternatively, the first conductivity type semiconductor layer 132 may be a p-type semiconductor layer and the second conductivity type semiconductor layer 136 may be an n-type semiconductor layer.

The light emitting structure 130 may have any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

According to the embodiment, when the active layer 134 emits light in the ultraviolet wavelength band as described above, the second conductivity type semiconductor layer 136 may include the second conductivity type first semiconductor layer 136A and the second conductivity type And a second semiconductor layer 136C.

The second conductive type first semiconductor layer 136A is disposed on the active layer 134. [ Each of the second conductive type first semiconductor layer 136A and the first conductive type semiconductor layer 132 may include AlGaN. This is because AlGaN absorbs less light in the ultraviolet wavelength band than GaN or InAlGaN.

The second conductive type second semiconductor layer 136C is disposed on the second conductive type first semiconductor layer 136A. The second conductive type second semiconductor layer 136C improves the electrical characteristics of the ultraviolet light emitting device 100A by uniformly supplying holes from the second electrode 144 to the active layer 134. [ For example, the second conductive type second semiconductor layer 136B may include GaN or InAlGaN.

If the first conductivity type is n-type and the second conductivity type is p-type, the second conductive type first semiconductor layer 136A may serve as an electron blocking layer (EBL). Alternatively, the second conductive type first semiconductor layer 136A serving as the electron blocking layer may have an AlGaN / AlGaN super lattice layer structure or an AlGaN bulk layer structure.

The energy band gap of the second conductive type first semiconductor layer 136A is set such that the light emitted from the active layer 134 can be transmitted without being absorbed by the second conductive type first semiconductor layer 136A, Lt; RTI ID = 0.0 > of the < / RTI > For this, the content ratio of aluminum contained in the second conductive type first semiconductor layer 136A may be 0.3 or more, although it depends on the wavelength of the light emitted from the active layer 134.

In addition, the second conductivity type semiconductor layer 136 may further include a second conductivity type third semiconductor layer 136B. The second conductive type third semiconductor layer 136B is disposed between the second conductive type first semiconductor layer 136A and the second conductive type second semiconductor layer 136C. For example, the second conductive type third semiconductor layer 136B may include at least one AlGaN layer. Here, when the second conductive type third semiconductor layer 136B includes a plurality of AlGaN layers, the aluminum concentration of the plurality of AlGaN layers may have a gradient or may be modulated.

Meanwhile, the first electrode 142 is disposed on the first conductive type semiconductor layer 132 exposed by mesa etching. The first electrode 142 may include an ohmic contact material and may serve as an ohmic layer so that a separate ohmic layer (not shown) may not be required. Another ohmic layer may be formed under the first electrode 142 .

And the second electrode 144 is disposed on the second conductive type second semiconductor layer 136C. Each of the first and second electrodes 142 and 144 may reflect or transmit the light emitted from the active layer 134 without absorbing it and may be formed on the first and second conductivity type semiconductor layers 132 and 136 Or the like. For example, each of the first and second electrodes 142 and 144 may be formed of a metal such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It can be made in an optional combination.

In particular, the second electrode 144 may be a transparent conductive oxide (TCO). For example, the second electrode 144 may be formed of a metal material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO zinc oxide, indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / IrOx / Au / ITO, and the material is not limited thereto. The second electrode 144 may include a material that makes an ohmic contact with the second conductive GaN layer 126C.

Further, the second electrode 144 may be formed as a single layer or multiple layers of a reflective electrode material having an ohmic characteristic. If the second electrode 144 functions as an ohmic layer, a separate ohmic layer (not shown) may not be formed.

4 shows a light emitting device of another embodiment.

Since the ultraviolet light emitting device 100A illustrated in FIG. 3 has a horizontal structure, light emitted from the active layer 134 is emitted through the second conductive type semiconductor layer 136 and the second electrode 144. The first conductivity type semiconductor layer 132, the buffer layer 120, and the substrate 110 are made of a light-transmitting material and the second conductivity type semiconductor layer 136 and the second electrode 144 are made of a light- And may be made of a material having non-light-transmitting property.

However, since the ultraviolet light emitting device 100B illustrated in FIG. 4 has a flip-chip bonding structure, light emitted from the active layer 134 is incident on the substrate 110, the buffer layer 120, and the first conductivity type semiconductor layer 132 . For this, the substrate 110, the buffer layer 120, and the first conductivity type semiconductor layer 132 are made of a light-transmitting material, and the second conductivity type semiconductor layer 136 and the second electrode 144 are transparent And may be made of a material having non-transparency.

Unlike the ultraviolet light emitting device 100A illustrated in FIG. 3, since the ultraviolet light emitting device 100B illustrated in FIG. 8 has a flip chip bonding structure, the first and second bumps 162A and 162B, the submount 164 ), A protective layer 166, and first and second metal layers (or electrode pads) 168A and 168B. Except for these differences, since the ultraviolet light emitting device 100B illustrated in FIG. 8 is the same as the ultraviolet light emitting device 100A illustrated in FIG. 1, the same reference numerals are used for the overlapped portions, and a detailed description thereof will be omitted .

The submount 164 may be formed of a semiconductor substrate such as AlN, BN, SiC, GaN, GaAs, Si, or the like, and may be formed of a semiconductor material having excellent thermal conductivity. In addition, an element for preventing electrostatic discharge (ESD) in the form of a Zener diode may be included in the submount 164.

The first and second metal layers 168A and 168B are disposed horizontally spaced apart from each other on the submount 164. The first bump 162A is disposed between the first metal layer 168A and the first electrode 142 and the second bump 162B is disposed between the second metal layer 168B and the second electrode 144. [

The first electrode 142 is connected to the first metal layer 168A of the submount 164 via the first bump 162A and the second electrode 144 is connected to the submount 164 via the second bump 162B. Of the second metal layer 168B.

Although not shown, a first upper bump metal layer (not shown) is further disposed between the first electrode 142 and the first bump 162A and a second upper bump metal layer (not shown) is disposed between the first metal layer 168A and the first bump 162A A first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate the position where the first bump 162A is to be located. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 144 and the second bump 162B, and a second lower bump metal layer (not shown) is disposed between the second metal layer 168B and the second bump 162B. A metal layer (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate the position where the second bump 162B is to be positioned.

If the submount 164 is made of a material having electrical conductivity such as Si, a protective layer (not shown) may be formed between the first and second metal layers 168A, 168B and the submount 164 as illustrated in FIG. 166 may be further disposed. Here, the protective layer 166 may be formed of an insulating material.

The thickness of the quantum well may be thicker than the thickness of the quantum wall, which constitutes the active layer of the multiple quantum well structure. The quantum well quantum wells may be arranged in 10 pairs to 20 pairs, in particular, the thickness of the quantum wells may be less than 40 ohms and the thickness of the quantum wells may be greater than 40 ohms.

For example, the thickness of the quantum well may be 43 to 45 ohms, the thickness of the quantum wall may be 34 to 37 ohms, and the final quantum well may serve as an electron blocking layer to be described later. can do.

In the light emitting structure grown on the conventional sapphire substrate, the active layer of the multiple quantum structure has a thickness of about 32 angstroms, a thickness of the proton walls of about 54 angstroms, and a thickness of about 80 angstroms Could.

That is, in the case of the nitride-based semiconductor layer grown on the conventional sapphire substrate, the quality of the multiple quantum well of the InGaN / GaN structure is deteriorated and the crystallinity is weak and the thickness of the quantum well is too large. However, when the substrate is grown on the same type of substrate and the second layer is doped with a high concentration of silicon, even if the thickness of the quantum well is increased up to 40 ohms or more, the crystallinity can be sufficiently grown without deteriorating the crystallinity, The light-emitting efficiency of the light-emitting device can be improved by sufficiently bonding electrons and holes in the well.

The quantum well can be formed of a material having an energy band gap smaller than the energy band gap of the quantum wall.

5 shows a light emitting device package of one embodiment.

The light emitting device package 200 according to the embodiment includes the light emitting device 100B, the substrate layer 210, the first and second package bodies 220A and 220B, the insulator 230, the first and second wires 242, 244 and a molding member 250. The light emitting device 100B is the same as the light emitting device illustrated in FIG. 8, and a detailed description thereof will be omitted by using the same reference numerals. In addition to the ultraviolet light emitting device 100B illustrated in FIG. 8, any one of the light emitting devices 100A and 100C illustrated in FIG. 2 or 9 may be implemented as the light emitting device package 200 as illustrated in FIG. 10 Of course.

The first and second package bodies 220A and 220B are disposed on the substrate layer 210. Here, the substrate layer 210 may be, but is not limited to, a printed circuit board (PCB). The first and second package bodies 220A and 220B may be made of aluminum, but are not limited thereto, in order to improve heat radiation characteristics when the light emitting device 100B emits ultraviolet light.

Although the submount 164 is shown as being disposed on the second package body 220B in Fig. 5, the embodiment is not limited to this. That is, the submount 164 may be disposed on the first package body 220A instead of the second package body 220B. The first and second metal layers 168A and 168B of the ultraviolet light emitting device 100B are connected to the first and second package bodies 220A and 220B by the first and second wires 242 and 244, respectively. When the first and second package bodies 220A and 220B are formed of an aluminum material having electrical conductivity, the insulator 230 electrically separates the first package body 220A and the second package body 220B from each other It plays a role.

The first conductive semiconductor layer 132 is electrically connected to the substrate layer (not shown) through the first electrode 142, the first bump 162A, the first metal layer 168A, the first wire 242 and the first package body 220A. 210, respectively. The second conductive semiconductor layer 136 is electrically connected to the second electrode 144 through the second electrode 144, the second bump 162B, the second metal layer 168B, the second wire 244 and the second package body 220B. Layer 210 may be electrically connected.

The molding member 250 may be filled in a cavity formed by the first and second package bodies 220A and 220B to surround and protect the ultraviolet light emitting device 100B. In addition, the molding member 250 may include a phosphor to change the wavelength of the light emitted from the ultraviolet light emitting device 100B.

As described above, in the case of the horizontal type light emitting device and the flip chip light emitting device, the amount of light extracted through the side surface is larger than the amount of light extracted through the upper surface, so that the light output decreases depending on the type of the light emitting device.

More specifically, the conventional vertical light emitting device has a surface emitter structure, whereas the horizontal and flip chip light emitting devices have a volume emitter structure.

That is, the horizontal and flip chip light emitting devices have a higher ratio of light extracted through the side of the ratio of light extracted through the upper surface than the vertical light emitting device.

In order to improve the light extraction of the horizontal-type and flip-chip light-emitting devices that emit the bulk light, it is important to increase the lateral width of the light-emitting device having the same volume.

Hereinafter, a structure for further improving the light extraction by increasing the lateral width of the light emitting device will be described with reference to FIGS. 6 to 8. FIG.

Fig. 6 is a perspective view of the light emitting device of the embodiment, and Fig. 7 is a top view of the light emitting device of the embodiment.

Since the internal structure of the light emitting device of the embodiment may be the same as the internal structure of the light emitting device shown in FIGS. 3 to 5, differences from the light emitting device shown in FIGS. 3 to 5 will be described.

The cross section of the upper surface of the light emitting devices 100A and 100B of the embodiment may be provided in a triangular shape.

The light emitting devices 100A and 100B of the embodiment may include a first region and a second region.

More specifically, the first region is a region where the first conductivity type semiconductor layer 132 is exposed to the outside, and the first electrode 142 may be disposed on the first conductivity type semiconductor layer 132.

The second region is a region where the second conductivity type semiconductor layer 136 is exposed to the outside and the second electrode 144 may be disposed on the second conductivity type semiconductor layer 136.

The first region and the second region may be provided so as to have a predetermined height difference.

For example, the predetermined height may be such that the active layer 134 is exposed from the upper surface of the first region and a portion of the first conductive type semiconductor layer 132 is exposed.

The first electrode 142 may be disposed on the second region to supply current to the first conductivity type semiconductor layer 132 when a portion of the first conductivity type semiconductor layer 132 is exposed.

In FIG. 6, for convenience of description, a predetermined height, which is a height difference between the first region and the second region, is shown as a portion of the first conductivity type semiconductor layer 132 from the upper surface of the second region, The user can vary the height of the predetermined height according to convenience, and the scope of the present invention is not limited thereto.

The cross section of the first conductivity type semiconductor layer 132 disposed on the first region may have a triangular shape and the first electrode 142 disposed on the first conductivity type semiconductor layer 132 may have a triangular shape .

The shape of the first electrode 142 is shown in a triangular shape to illustrate an example. The shape of the first electrode 142 is not limited to a triangular shape and can be arranged in various shapes. Nor does it limit the scope of rights of

The shape of the cross section of the second conductivity type semiconductor layer 136 disposed on the second region may be triangular, and the second electrode 144 disposed on the second conductivity type semiconductor layer 136 may also be a triangle .

However, the shape of the second electrode 144 is shown in a triangular shape to illustrate an example, and the shape of the second electrode 144 is not limited to a triangular shape and can be arranged in various shapes, Nor does it limit the scope of rights of

The light emitting devices 100A and 100B of the embodiment may be provided to have a predetermined height h from the lower surface to the upper surface.

From the viewpoint of light extraction of the light emitting devices 100A and 100B, the light emitting devices 100A and 100B of the embodiment can be defined as a volume emitter structure.

For example, the light emitting devices 100A and 100B of the embodiment are different from the main structure in that the amount of light extracted from the upper surface is larger than the amount of light extracted from the side, The amount of light extracted from the side is larger than the amount of light extracted from the surface.

That is, in order to increase the light extraction efficiency of the light emitting devices 100A and 100B of the embodiment, it is necessary to maximize the width of the side surfaces of the light emitting devices 100A and 100B from which sufficient light can be extracted.

The width of the side surfaces of the light emitting elements 100A and 100B can be expressed as a product of the height of the light emitting elements 100A and 100B and the circumferential length of the upper surface of the light emitting elements 100A and 100B, It is important to maximize the height of the light emitting devices 100A and 100B and the circumferential length of the upper surface of the light emitting devices 100A and 100B in order to improve the light extraction efficiency on the side.

First, the predetermined height h of the light emitting devices 100A and 100B of the embodiment will be described with reference to the following graphs.

The x-axis of the graph represents the height of the light emitting devices 100A and 100B of the embodiment. The y-axis of the graph represents the light extraction efficiency (C _ex ) according to the heights of the light emitting devices 100A and 100B of the embodiment. ≪ / RTI >

Referring to the graph, the light extraction efficiency of the light emitting devices 100A and 100B of the embodiment increases as the height h of the light emitting devices 100A and 100B increases.

More specifically, when the height of the light emitting devices 100A and 100B of the embodiment is 0um to 10um, the light extraction efficiency is about 82% to 84%, which corresponds to the light extraction efficiency of the light emitting device having a general surface light emitting structure Respectively.

Further, in the case where the height of the light emitting devices 100A and 100B of the embodiment is 60um or more, the light extraction efficiency is as high as about 90%, which can be regarded as the light extraction efficiency of the light emitting device of the embodiment having the volume light emitting structure.

That is, it can be understood that the light extraction efficiency of the light emitting devices 100A and 100B increases as the height of the light emitting devices 100A and 100B increases.

However, after the heights of the light emitting devices 100A and 100B reach a predetermined height, the light extraction efficiency saturates.

This is because light absorption occurs due to the internal structure of the light emitting devices 100A and 100B including GaN or AlGaN after the heights of the light emitting devices 100A and 100B reach a predetermined height.

Therefore, the light emitting devices 100A and 100B of the embodiment can be provided to have a height included in a predetermined range.

For example, the thicknesses of the light emitting devices 100A and 100B of the embodiment may be set to 60um or more and 300um or less.

However, this is for the purpose of illustrating an embodiment, and the user can more variously vary the height range of the light emitting devices 100A and 100B of the embodiment, and does not limit the scope of the right of the present invention.

As described above, the cross section of the light emitting devices 100A and 100B of the embodiment can be provided in a triangular shape, and the cross section of the light emitting devices 100A and 100B includes three corners and three corners including the three corners .

The three corners may include a first edge a, a second edge b adjacent to the first edge a, and a third edge c.

The three angles are defined by a first angle a formed by a first edge a and a second edge b, a second angle a formed by the first edge a and the third edge c, (?) and a third angle (?) formed by the second edge (b) and the third edge (c).

For example, the first edge a may correspond to the third angle gamma, the second edge b may correspond to the second angle beta, the third edge c may correspond to the second angle beta, May correspond to the first angle alpha.

The first to third edges a, b and c for maximizing the width of the side faces of the light emitting devices 100A and 100B by maximizing the peripheral length of the light emitting devices 100A and 100B of the embodiment will be described with reference to FIG. ) And the first to third angles (?,?,?) Will be described.

8 is a graph showing the ratio of the first circumferential length to the second circumferential length according to at least one angle of the light emitting device of the embodiment.

Referring to FIG. 8, the light emitting devices 100A and 100B of the embodiment may have a cross section of a right triangle. When the width of the light emitting devices 100A and 100B is assumed to be S, the first to third edges a and b , c) may be referred to as a first circumferential length.

The first, second, and third edges a, b, and c of the light emitting device 100A, 100B of the embodiment may satisfy the following equations when the cross section has a right triangle.

Equation

In addition, the light emitting devices 100A and 100B of the embodiment may have a regular triangular cross-section, and a circumferential length of the light emitting device 100A and 100B may be referred to as a second circumferential length.

The x-axis of the graph shown in Fig. 8 may be one of at least two angles except the right angle among the first to third angles?,?,?, And the y-axis may have a first circumference length and a second circumference length .

The first angle alpha of the light emitting devices 100A and 100B of the embodiment may be set to 80 DEG to 100 DEG.

Accordingly, the sum of the second angle? And the third angle? Can be set to 80 ° to 100 °.

As the second angle? Or the third angle? Changes, the lengths of the first to third edges a, b, and c change, and the ratio of the first and second circumferential lengths FIG.

The light extraction efficiency of the light emitting devices 100A and 100B of the embodiment is proportional to the peripheral length of the light emitting devices 100A and 100B as described above under the assumption that the heights of the light emitting devices 100A and 100B of the embodiment are constant. have.

For example, when the first perimeter length is longer than the second perimeter, the lateral width of the light emitting devices 100A and 100B is widened, thereby increasing the light extraction efficiency.

Since the light emitted from the light emitting devices 100A and 100B that emit bulk light is mainly emitted through the side surfaces as described above, the width of the side surfaces of the light emitting devices 100A and 100B and the width of the light emitting devices 100A and 100B The extraction efficiency is positively correlated.

However, since the width of the active layer 134 in which light is emitted varies depending on the volume of the light emitting devices 100A and 100B, the light emitting devices 100A and 100B of the embodiment have the same volume in the light emitting devices 100A and 100B The light emitting devices 100A and 100B having the same height h and the same width S as the transverse section are provided to increase the light extraction efficiency by providing the light emitting devices 100A and 100B having the maximum circumferential length .

Referring to the graph shown in FIG. 8, as the size of the second angle (?) Or the third angle (?) Increases, the first perimeter becomes larger and thus the light extraction efficiency is increased .

However, the size of the second angle (?) Or the third angle (?) Of the embodiment may be set to 25 to 65 degrees.

If the size of the second angle? Or the third angle? Is less than 25 占 or more than 65 占 the current spreading is reduced and the light extraction efficiency is reduced.

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like may be disposed on the light path of light emitted from the light emitting device package. For example, the illumination unit may be an automotive lighting, an outdoor illumination, a backlight unit of a display panel, an indicator such as an indicator lamp or a signal lamp, a lamp , And a streetlight.

A plurality of light emitting device packages according to the embodiments may be arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Further, the display device, the indicating device, and the lighting device including the light emitting device package according to the embodiment can be realized.

Here, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module for emitting light, a light guide plate disposed in front of the reflector for guiding light emitted from the light emitting module forward, An image signal output circuit connected to the display panel and supplying an image signal to the display panel; and a color filter disposed in front of the display panel, . Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the illumination device may include a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat of the light source module, and a power supply unit for processing or converting an electric signal provided from the outside, . For example, the lighting device may include a lamp, a head lamp, or a streetlight.

The head lamp includes a light emitting module including light emitting device packages disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, a lens for refracting light reflected by the reflector forward And a shade that reflects off or reflects a portion of the light reflected by the reflector and directed to the lens to provide the designer with a desired light distribution pattern.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

130: substrate 140: buffer layer
150: light emitting structure 152: first conductivity type semiconductor layer
154: active layer 156: second conductivity type semiconductor layer
162: first electrode 164: second electrode
200: light emitting device package 169: first reflective layer
170: second reflective layer 210: substrate layer
First corner: a 2nd corner: b
3rd edge: c 1st angle: alpha
Second angle:? Third angle:?

Claims (10)

Board;
A first conductive semiconductor layer disposed on the substrate;
An active layer disposed on the first conductive semiconductor layer; And
And a second conductivity type semiconductor layer disposed on the active layer,
Wherein the active layer has a triangular cross-
Wherein at least one angle of the cross-section of the substrate layer of the triangular shape is 80 DEG to 100 DEG. The method according to claim 1,
Wherein a sum of thicknesses of the substrate, the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer is 60um or more and 300um or less. The method according to claim 1,
Wherein the cross-section of the active layer comprises a first edge, a second edge, and a third edge,
Wherein a size of the first angle formed by the first edge and the second edge is 90 DEG. The method of claim 3,
Wherein the first angle and the neighboring second angle or third angle are in a range of 25 DEG to 65 DEG. Board;
A first conductive semiconductor layer disposed on the substrate;
An active layer disposed on the first conductive semiconductor layer; And
And a second conductivity type semiconductor layer disposed on the active layer,
Wherein a sum of thicknesses of the substrate, the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer is 60um or more and 300um or less. 6. The method of claim 5,
Wherein the triangular cross-section of the substrate is triangular in shape,
A first edge;
A second edge adjacent the first edge; And
And a third edge adjacent the first edge and the second edge,
Emitting device satisfies the following relational expression.

a denotes a first corner, b denotes a second corner, and c denotes a third corner. The method according to claim 6,
And the size of the angle formed by the first edge and the third edge is 25 DEG to 65 DEG. 6. The method according to claim 1 or 5,
Wherein the substrate layer comprises GaN or AlGaN. 6. The method according to claim 1 or 5,
Wherein the active layer is made of InGaN / GaN. A package body;
A first lead frame and a second lead frame disposed on the package body and electrically separated from each other; And
The light emitting device package according to any one of claims 1 to 5, wherein the light emitting element is flip-bonded to the first lead frame and the second lead frame.

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