KR20170081435A - Flexible electronic device and laminate - Google Patents
Flexible electronic device and laminate Download PDFInfo
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- KR20170081435A KR20170081435A KR1020160000467A KR20160000467A KR20170081435A KR 20170081435 A KR20170081435 A KR 20170081435A KR 1020160000467 A KR1020160000467 A KR 1020160000467A KR 20160000467 A KR20160000467 A KR 20160000467A KR 20170081435 A KR20170081435 A KR 20170081435A
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- flexible
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
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- H01L51/0097—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0715—Polysiloxane
Abstract
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a flexible electronic device and a laminate.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a flexible electronic device and a laminate.
Display devices and lighting devices using liquid crystal devices, electronic ink devices, organic light emitting devices (OLED) and the like are widely used or appearing on the market, and photovoltaic devices using organic or inorganic materials are also being used for pollution-free energy production.
Flexible electronic devices have been actively developed as next generation electronic devices by using flexible substrates as substrates for these devices.
However, there are still many process difficulties in providing a circuit and a display device on a flexible substrate, and research to solve such a difficulty in the process is required.
The specification intends to provide a method and a laminate for manufacturing a flexible electronic device.
The present disclosure relates to a method of manufacturing a flexible substrate, comprising: forming an adhesive layer on a flexible substrate; Attaching a flexible substrate on the carrier substrate by the adhesive layer; Forming at least one of a circuit and a display element on a surface of the flexible substrate opposite to a surface provided with the carrier substrate; And separating the flexible substrate from the carrier substrate, wherein the adhesive layer comprises a siloxane-based tackifier having an adhesion of 200 g / inch or more and 250 g / inch or less .
The present disclosure also relates to a semiconductor device comprising: a carrier substrate; A flexible substrate; An adhesive layer provided between the carrier substrate and the flexible substrate; And at least one of a circuit and a display device provided on a surface opposite to a surface of the flexible substrate on which the carrier substrate is provided, wherein the adhesive layer comprises a siloxane-based tackifier having an adhesion of 200 g / Wherein the laminate for a flexible electronic device is provided.
The laminate according to one embodiment of the present invention has an advantage that there is little or no defects such as lifting or bubbling of a substrate in a pattern formation process such as vapor deposition and wet process for a circuit or a display device on a flexible substrate.
There is an advantage that the pattern formed on the flexible substrate or the flexible substrate is less damaged when the flexible substrate is separated from the carrier substrate in the manufacturing method of the flexible electronic device according to the embodiment of the present specification.
1 is a laminated structure of a laminate according to an embodiment of the present invention.
Fig. 2 is a process detail view of forming a pattern on a flexible substrate according to one embodiment of the present specification.
3 is an evaluation criterion for the progress of each process in Experimental Example 2. [
Hereinafter, the present invention will be described in detail.
The present disclosure relates to a method of manufacturing a flexible substrate, comprising: forming an adhesive layer on a flexible substrate; Attaching a flexible substrate on the carrier substrate by the adhesive layer; Forming at least one of a circuit and a display element on a surface of the flexible substrate opposite to a surface provided with the carrier substrate; And separating the flexible substrate from the carrier substrate, wherein the adhesive layer comprises a siloxane-based tackifier having an adhesion of 200 g / inch or more and 250 g / inch or less .
The manufacturing method of the flexible electronic device includes a step of forming an adhesive layer on a flexible substrate.
The step of forming the adhesive layer may be a step of forming an adhesive layer on the flexible substrate through a chemical vapor deposition method, a physical vapor deposition method, or an atomic layer deposition method.
The chemical vapor deposition method is a method of forming a thin film on a substrate by a chemical reaction such as pyrolysis, photolysis, redox reaction, substitution, etc. Specifically, the chemical vapor deposition method is a thermal chemical vapor deposition method, At least one of a photo induced chemical vapor deposition method, a plasma chemical vapor deposition method, a low pressure chemical vapor deposition method, and a low pressure chemical vapor deposition method Lt; / RTI >
In the physical vapor deposition method, the material to be deposited is evaporated or sputtered in vacuum to deposit on a substrate. Specifically, the physical vapor deposition method is a thermal evaporation method, an e-beam evaporation method, and a sputtering method. And may be at least one of sputtering.
The pressure-sensitive adhesive layer may include a siloxane-based pressure-sensitive adhesive having an adhesive strength of 200 g / inch to 250 g / inch. Specifically, the pressure-sensitive adhesive layer may include a siloxane- And may include an adhesive. In this case, there is no lifting phenomenon due to bubbles or the like, and cracks or unevenness are not generated.
The siloxane-based pressure-sensitive adhesive may include a polydimethylsiloxane-based pressure-sensitive adhesive having an adhesion of 200 g / inch or more and 250 g / inch or less. Specifically, the siloxane- Based pressure-sensitive adhesives.
The pressure-sensitive adhesive layer may be composed of a polydimethylsiloxane-based pressure-sensitive adhesive having an adhesion of 200 g / inch or more and 250 g / inch or less. Specifically, the siloxane-based pressure-sensitive adhesive may have an adhesion of 200 g / inch to 230 g / inch And a polydimethylsiloxane-based pressure-sensitive adhesive.
In this specification, the adhesion of the adhesive layer is measured by a 180 ° peel-off test (based on TESA 7475 tape). Specifically, the adhesion of the pressure-sensitive adhesive layer is to be a measure of the adhesive strength of the adhesive layer using a standard tape of TESA7475 is mainly used for 180 ° peel rating, and laminating the TESA7475 to the adhesive layer, to give a load of 70g / cm 3 After allowing to stand at 55 DEG C for 24 hours, peel off measurement was performed in the direction of 180 DEG. The measuring instrument was measured five times in total at a peeling speed of 300 mm / min with a texture analyzer XT plus instrument, and the average value was taken.
The manufacturing method of the flexible electronic device includes a step of attaching the flexible substrate on the carrier substrate by the adhesive layer.
The attaching step may be a step of attaching the carrier substrate to the surface of the flexible substrate on which the adhesive layer is formed. Specifically, the attaching step may be a step of laminating a surface of the flexible substrate on which an adhesive layer is formed on one surface of the carrier substrate.
The step of attaching the flexible substrate on the carrier substrate can be performed by a roll-to-roll process as well as a plate-to-plate process or a roll-to-plate process have.
The manufacturing method of the flexible electronic device may further include forming an anti-flooding layer on a peripheral portion of the flexible substrate adhered on the adhesive layer so that the flexible substrate is not lifted.
As shown in FIG. 1, the anti-floating layer may be formed on the peripheral portion of the flexible substrate adhered on the adhesive layer so that the flexible substrate is not lifted.
The manufacturing method of the flexible electronic device includes forming at least one of a circuit and a display element on the opposite surface of the flexible substrate on which the carrier substrate is provided.
The flexible substrate adhered to the carrier substrate by the adhesive layer forms at least one of a circuit having a pattern necessary for an electronic device requiring an additional current on the opposite side of the surface provided with the carrier substrate and a display element for image formation .
The circuit and the display device formed on the flexible substrate may be formed of a thin film transistor (TFT), a light emitting diode (LED), an organic light emitting diode (OLED), a color filter, a polarizing plate, And may include at least one.
As shown in Fig. 2, a pattern for a circuit and a display element can be formed on a flexible substrate. Specifically, a deposition step of forming an evaporation layer on a flexible substrate by a vapor deposition method such as a plasma chemical vapor deposition (PECVD) method or a sputtering method; Cleaning step; Applying a photoresist (PR) on the cleaned deposition layer; Exposing a portion of the photoresist to light using a photomask; Impregnating the resist with a developing solution to remove photoresist exposed to light; Etching the deposited layer where the photoresist pattern is not formed using the remaining photoresist pattern as a mask; Peeling off the photoresist pattern; And inspecting the pattern of the deposition layer formed on the flexible substrate, one or more patterns for the circuit and the display element can be formed on the flexible substrate.
The forming of the circuit and the display element may include forming an organic light emitting portion in which a first electrode, at least one organic material layer and a second electrode are sequentially stacked on a flexible substrate.
The manufacturing method of the flexible electronic device includes separating the flexible substrate from the carrier substrate.
The method of separating the flexible substrate from the carrier substrate can easily separate the flexible substrate from the carrier substrate by delamination of the edge of the flexible substrate.
It is possible to remove only the flexible substrate after detaching the adhesive property by using heat or a laser for separating from the carrier substrate. However, in this case, the large area process is difficult and the risk of damage to the carrier substrate is large. The dimensional stability of the substrate may also be a problem.
The flexible electronic device may be a flexible display or a lighting device.
The present disclosure relates to a semiconductor device comprising: a carrier substrate; A flexible substrate; An adhesive layer provided between the carrier substrate and the flexible substrate; And at least one of a circuit and a display device provided on a surface opposite to a surface of the flexible substrate on which the carrier substrate is provided, wherein the adhesive layer comprises a siloxane-based tackifier having an adhesion of 200 g / Wherein the laminate for a flexible electronic device is provided.
The carrier substrate may be made of materials known in the art. More specifically, the carrier substrate may be a glass substrate, a metal substrate, a plastic substrate, or the like, but is not limited thereto.
The thickness of the carrier substrate may be 0.1 mm or more and 0.7 mm or less, but is not limited thereto.
The flexible substrate may be at least one of a glass substrate, a plastic substrate, and a plastic film.
The material of the plastic substrate or the plastic film is not particularly limited and may be selected from the group consisting of polyacrylate, polypropylene (PP), polyethylene terephthalate (PET), polyethylene ether phthalate, polyethylene phthalate but are not limited to, polyethylene phthalate, polybuthylene phthalate, polyethylene naphthalate (PEN), polycarbonate (PC), polystyrene (PS), polyether imide, and may include one material selected from the group consisting of polyether sulfone, polydimethyl siloxane (PDMS), polyetheretherketone (PEEK), polyimide (PI), and combinations thereof . The plastic substrate or the plastic film may be used in the form of a single layer or a multilayer.
The thickness of the flexible substrate may be 50 탆 or more and 500 탆 or less, but is not limited thereto.
The pressure-sensitive adhesive layer may include a siloxane-based pressure-sensitive adhesive having an adhesive strength of 200 g / inch to 250 g / inch. Specifically, the pressure-sensitive adhesive layer may include a siloxane- And may include an adhesive. In this case, there is no lifting phenomenon due to bubbles or the like, and cracks or unevenness are not generated.
The siloxane-based pressure-sensitive adhesive may include a polydimethylsiloxane-based pressure-sensitive adhesive having an adhesion of 200 g / inch or more and 250 g / inch or less. Specifically, the siloxane- Based pressure-sensitive adhesives.
The pressure-sensitive adhesive layer may be composed of a polydimethylsiloxane-based pressure-sensitive adhesive having an adhesion of 200 g / inch or more and 250 g / inch or less. Specifically, the siloxane-based pressure-sensitive adhesive may have an adhesion of 200 g / inch to 230 g / inch And a polydimethylsiloxane-based pressure-sensitive adhesive.
The thickness of the adhesive layer may be 50 μm or more and 700 μm or less. In this case, the coating thickness of the adhesive layer may be uniformly maintained.
Hereinafter, the present invention will be described in more detail by way of examples. However, the following embodiments are intended to illustrate the present disclosure and are not intended to limit the present disclosure.
[Example]
[Example 1]
As the flexible substrate, a pressure-sensitive adhesive layer having a thickness of 400 탆 was formed on a PEN film (polyethylene naphthalate film) having a thickness of 125 탆 by using a polydimethylsiloxane adhesive having an adhesive strength of 221 g / inch.
A face provided with a pressure-sensitive adhesive layer was placed on a glass substrate for a liquid crystal display (LCD) having a thickness of 0.63 mm as a carrier substrate, and a flexible substrate was laminated.
[Comparative Example 1]
The same as Example 1 except that the adhesive strength of the polydimethylsiloxane adhesive was 196 g / inch.
[Comparative Example 2]
The same as Example 1 except that the adhesive strength of the polydimethylsiloxane adhesive was 280 g / inch.
[Experimental Example 1]
Polydimethylsiloxane Adhesive strength evaluation of adhesive
The adhesion of the pressure-sensitive adhesive layer is to be a measure of the adhesive strength of the adhesive layer using a standard tape of TESA7475 is mainly used for 180 ° peel rating, lamination the TESA7475 to the adhesive layer, to give a load of 70g / cm 3 to 55 ℃ Left for 24 hours, and peel off in the direction of 180 DEG. The measuring instrument was measured five times in total at a peeling speed of 300 mm / min with a texture analyzer XT plus instrument, and the average value was taken.
[Experimental Example 2]
When a pattern is formed on the flexible sheet by the same process as shown in Fig. 2, the progress of each process is evaluated.
(With pattern crack)
After the above vapor deposition, cleaning, etching and PR stripping process, the state of adhesion between the flexible substrate and the adhesive layer was checked and indicated as? (Excellent),? (Good),? (Unsuitable) or X did.
The flexible substrate separation step indicates whether or not cracks are generated during the final delamination process of the flexible substrate. It is checked whether there is a pattern due to cracks on the final product in which all manufacturing processes have been completed, Good),? (Unsuitable) or X (bad).
Claims (11)
Attaching a flexible substrate on the carrier substrate by the adhesive layer;
Forming at least one of a circuit and a display element on a surface of the flexible substrate opposite to a surface provided with the carrier substrate; And
And separating the flexible substrate from the carrier substrate,
Wherein the pressure-sensitive adhesive layer comprises a siloxane-based pressure-sensitive adhesive having an adhesion of 200 g / inch or more and 250 g / inch or less.
A flexible substrate;
An adhesive layer provided between the carrier substrate and the flexible substrate; And
And at least one of a circuit and a display element provided on a surface opposite to a surface of the flexible substrate on which the carrier substrate is provided,
Wherein the pressure-sensitive adhesive layer comprises a siloxane-based pressure-sensitive adhesive having an adhesion of 200 g / inch or more and 250 g / inch or less.
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KR1020160000467A KR20170081435A (en) | 2016-01-04 | 2016-01-04 | Flexible electronic device and laminate |
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KR1020160000467A KR20170081435A (en) | 2016-01-04 | 2016-01-04 | Flexible electronic device and laminate |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019004721A1 (en) | 2017-06-27 | 2019-01-03 | 주식회사 엘지화학 | Decorative member and method for preparing same |
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WO2019004721A1 (en) | 2017-06-27 | 2019-01-03 | 주식회사 엘지화학 | Decorative member and method for preparing same |
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