KR20170074292A - QD Beads and Molded Product Including QD Beads - Google Patents

QD Beads and Molded Product Including QD Beads Download PDF

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Publication number
KR20170074292A
KR20170074292A KR1020150183035A KR20150183035A KR20170074292A KR 20170074292 A KR20170074292 A KR 20170074292A KR 1020150183035 A KR1020150183035 A KR 1020150183035A KR 20150183035 A KR20150183035 A KR 20150183035A KR 20170074292 A KR20170074292 A KR 20170074292A
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KR
South Korea
Prior art keywords
quantum dot
bead
quantum
present
beads
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KR1020150183035A
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Korean (ko)
Inventor
정호균
채희엽
조덕수
정수빈
Original Assignee
성균관대학교산학협력단
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Priority to KR1020150183035A priority Critical patent/KR20170074292A/en
Publication of KR20170074292A publication Critical patent/KR20170074292A/en
Priority to KR1020180096717A priority patent/KR102297782B1/en

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    • H01L51/502
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)

Abstract

The present invention relates to a quantum dot bead and a quantum dot bead molded article. The quantum dot bead according to an embodiment of the present invention is characterized in that a plurality of quantum dots are dispersed in a solidified binder with a distance not less than a minimum separation distance that does not cause a Forester Resonance Energy Transfer (FRET) phenomenon.

Description

QD Beads and Molded Product Including QD Beads [

The present invention relates to a quantum dot bead and a molded article including the same. More specifically, the present invention relates to a quantum dot bead capable of maintaining the characteristics of quantum dots and a molded article including the same.

Quantum Dot (QD) is a material in which a semiconductor material becomes a quantum confinement effect as a conductor material becomes nanoparticle, and has a characteristic of emitting light by quantum effect.

The light emitted from the quantum dots has good optical color purity of the wavelength and can change the luminescent color only by adjusting the size of the quantum dots, and has been receiving attention in the next generation of illumination, solar light, display, medicine and the like.

However, since quantum dots exhibit low quantum efficiency and optical characteristics due to their low water solubility and low environmental stability, especially solid quantum dots are used in applications of quantum dots. However, coagulation phenomenon occurs due to long solidification time when liquid quantum dots are converted into solid quantum dots There is a problem that the efficiency is greatly reduced since water is permeated and the characteristics of the quantum dots are lost.

Korean Patent Laid-Open No. 10-2011-0127897 "Quantum Point Light Emitting Device and Manufacturing Method Thereof"

An object of the present invention is to provide a solidified quantum dot bead while maintaining the characteristics of the quantum dot.

Another object of the present invention is to provide a method of manufacturing a quantum dot bead capable of solidifying a quantum dot while maintaining its characteristics.

It is another object of the present invention to provide a molded body including quantum dots which can be freely patterned in 2D and 3D.

It is still another object of the present invention to provide a method of manufacturing a molded article including quantum dots freely patternable in 2D and 3D.

These and other objects of the present invention can be attained both by the quantum dot bead according to the present invention and by a molded article including the same.

The quantum dot bead according to an embodiment of the present invention is characterized in that a plurality of quantum dots are dispersed in a solidified binder with a distance not less than a minimum separation distance that does not cause a Forester Resonance Energy Transfer (FRET) phenomenon.

The minimum separation distance may be 10 nm.

A method of manufacturing a quantum dot bead according to an embodiment of the present invention includes: applying a voltage between a nozzle of a liquid ejecting apparatus and a substrate; Spraying a liquid quantum dot in a solution state in which quantum dots and a binder are dispersed in a solvent through the nozzle of the voltage injected liquid ejection apparatus; And the solvent is evaporated by the electrostatic force between the nozzle and the substrate, and the binder is solidified to form a quantum dot bead before the quantum dots are agglomerated to a distance of a minimum separation distance that does not cause a Forester Resonance Energy Transfer (FRET) The method comprising the steps of:

The quantum dot bead molded article according to an embodiment of the present invention is formed by mixing quantum dot beads according to an embodiment of the present invention in a sticky composition having an adhesive force according to environmental conditions.

The adhesive composition may be a thermoplastic resin having an adhesive force by heat or a pressure-plastic resin having an adhesive force by pressure.

The quantum dot bead compact may also be in the form of a powder, pellet, or filament.

According to an embodiment of the present invention, there is provided a method for manufacturing a quantum dot bead molded body, comprising: mixing a thermoplastic resin or a pressure plastic resin in a high temperature or high pressure environment with a quantum dot bead according to claim 1 or 2 to form a mixture; And forming the mixture into a molded article in the form of a powder, a pellet, or a filament.

INDUSTRIAL APPLICABILITY The present invention has the effect of providing a solidified quantum dot bead and a manufacturing method thereof while maintaining the characteristics of a quantum dot. Further, the present invention has the effect of providing a molded article including a quantum dot that can be freely patterned in 2D and 3D, and a method of manufacturing the same.

In addition, since a molded article including a quantum dot is used as a 3D printing material, it has an effect of providing a quantum dot display having various shapes, illumination, and the like.

1 is a cross-sectional view of a quantum dot bead according to an embodiment of the present invention.
2 is a flowchart of a method of manufacturing a quantum dot bead according to an embodiment of the present invention.
FIG. 3 is a view showing formation of a quantum dot bead according to a method of manufacturing a quantum dot bead according to an embodiment of the present invention.
FIG. 4 is a view illustrating a quantum dot bead formed according to a method of manufacturing a quantum dot bead according to an embodiment of the present invention.
5 is a view showing a state of a quantum dot bead changed according to a distance between a nozzle and a substrate during manufacturing.
FIG. 6 is a graph showing the evaporation rate of the solvent increasing with the electrostatic force. FIG.
FIG. 7 is a graph showing the characteristics of a liquid QD solution, a QD polymer bead according to an embodiment of the present invention, and a conventional solid quantum dot (QD casting).
FIGS. 8 and 9 illustrate the efficiency of an OLED using quantum dot beads according to an embodiment of the present invention.
10 is a view showing an exemplary view of a quantum dot bead molded body according to an embodiment of the present invention.

Hereinafter, a quantum dot bead and a molded article including the quantum dot bead according to the present invention will be described in detail with reference to the accompanying drawings.

In the following description, only parts required to understand the quantum dot bead and the molded body including the quantum dot bead according to an embodiment of the present invention will be described, and the description of other parts may be omitted so as not to disturb the gist of the present invention.

In addition, terms and words used in the following description and claims should not be construed to be limited to ordinary or dictionary meanings, but are to be construed in a manner consistent with the technical idea of the present invention As well as the concept.

1 is a cross-sectional view of a quantum dot bead according to an embodiment of the present invention.

As shown in FIG. 1, a quantum dot bead 10 according to an embodiment of the present invention is a particle in which a quantum dot 1 is dispersed and solidified in a binder 2.

Particularly, in the process of solidifying the binder 2, the quantum dots 1 are not aggregated and are spaced apart from the minimum separation distance. Here, the minimum separation distance means a distance at which the quantum dots are close to each other, so that the Forester Resonance Energy Transfer (FRET) phenomenon does not occur, and is generally about 10 nm.

In general, a liquid QD, in which QDs are dispersed in a liquid, aggregates QD nanoparticles during solidification into solid quantum dots. When the QDs approach a certain distance (about 10 nm), the result of the Forester Resonance Energy Transfer (FRET) The quantum dots themselves have a subband gap and an energy potential is generated. In this process, the photons of the quantum dots are converted into non-luminescent photons by dipole-dipole coupling and are lost to heat.

In contrast, the quantum dot bead 10 according to an embodiment of the present invention can solidify the quantum dot 1 in a state where the quantum dot 1 is not agglomerated within a minimum separation distance in a process of solidifying the binder, have.

The quantum dot bead 10 according to an embodiment of the present invention includes a liquid quantum dot preparation step S100, a voltage application step S110, a liquid quantum dot injection step S120, and a quantum dot bead formation step (S130).

More specifically, first, the quantum dot 1 and the binder 2 are dissolved in a solvent to prepare liquid quantum dots (S100).

Next, a spraying apparatus 20 as shown in FIG. 3 is prepared, a voltage is applied between the nozzle 21 of the spraying apparatus and the substrate 30 (S110), and the liquid quantum dot (S120).

As a result, the solvent of the liquid quantum dot droplets ejected improves the evaporation rate due to the electrostatic force formed between the nozzle and the substrate. As a result, the binder 2 solidifies quickly before the aggregation of the quantum dots 1 within the minimum separation distance, A bead is formed (S130).

The method of manufacturing a quantum dot bead according to an embodiment of the present invention does not require a separate drying process for forming a liquid quantum dot into a solid quantum dot, and thus the quantum dot bead can be rapidly manufactured, and the electrostatic force between the atomizer and the substrate The binder rapidly evaporates and the binder rapidly coagulates before the quantum dots 1 are agglomerated to within the minimum separation distance, thereby solving the problem of efficiency reduction caused by solidification of the quantum dots.

According to one embodiment of the present invention, liquid quantum dots are prepared by dissolving quantum dots and polystyrene (PS) in CHCl 3 , and a voltage of 2000 kV is applied in a state where the distance between the nozzles and the substrate is 10 cm. And the quantum dot beads as shown in FIG. 4 were obtained by spraying.

As shown in FIG. 5, when the distance between the nozzle and the substrate was changed to 5 cm, 7 cm, and 15 cm, the liquid quantum dot was sprayed, unlike the above embodiment, and the quantum dot bead was not properly formed.

The reason why the quantum dot beads are not properly formed according to the distance between the nozzle and the substrate is that the evaporation rate of the solvent is changed by the electrostatic force between the nozzle and the substrate as shown in FIG. The size of the voltage applied between the nozzle and the substrate and the distance between the nozzle and the substrate are adjusted in order to generate an electrostatic force of an appropriate size between the nozzle and the substrate in consideration of the type of solvent, It will be possible to manufacture quantum dot beads.

Also, as shown in FIG. 1, when the QD polymer bead manufactured according to the manufacturing method according to an embodiment of the present invention has dispersed QDs at a minimum separation distance at which no Forester Resonance Energy Transfer (FRET) QD Solution prepared in S100, QD Polymer bead prepared in S100 through S130, and QD Casting prepared by solidifying the liquid quantum dots prepared in S100 with a conventional method, ) Were investigated.

As a result, as shown in FIG. 7, the PL intensities of the quantum dot beads according to an embodiment of the present invention are 9.3 times higher than the PL intensities of the quantum dot films, so that the quantum dot beads according to an embodiment of the present invention It was confirmed that the efficiency was much improved.

In addition, the peak wavelength of the quantum dot bead according to an embodiment of the present invention is found to be equal to the peak wavelength of the liquid quantum dot, so that the quantum dots in the quantum dot bead according to an embodiment of the present invention are dispersed as in the liquid quantum dot .

As a result of forming the quantum dot organic light emitting diode using the quantum dot bead according to an embodiment of the present invention, the light emitting layer using the red quantum dot bead according to an embodiment of the present invention is shown in FIG. The quantum efficiency of the stacked layers increased by 28%, and as shown in FIG. 9, it was confirmed that the quantum efficiency of a stack of one light emitting layer using green quantum dot beads according to an embodiment of the present invention was increased by 53% .

The quantum dot bead according to an embodiment of the present invention as described above can be used in various forms in various fields such as illumination, solar light, display, and medicine by solving the problem of efficiency reduction of the conventional solid quantum dots. The quantum dot bead according to an embodiment of the present invention needs to be patterned in various forms.

Accordingly, the present invention provides a molded body for free patterning of quantum dot beads and a method of manufacturing the same, according to an embodiment of the present invention.

The quantum dot bead formed body 100 according to an embodiment of the present invention may be manufactured by a method including a resin mixture preparing step S200 and a molded body forming step S210 as shown in FIG.

More specifically, in order to produce the quantum dot bead molded body according to an embodiment of the present invention, a mixture prepared by mixing the adhesive composition having an adhesive force according to environmental conditions and the quantum dot bead 10 according to an embodiment of the present invention is prepared (S200).

At this time, the pressure sensitive adhesive composition (3) and the quantum dot bead (10) can be pressurized or heated so as to be well mixed.

In addition, although it is preferable to mix the adhesive composition and the quantum dot beads evenly, since the quantum dot is already separated in the quantum dot bead so as to maintain the quantum characteristics, even if the quantum dot beads do not uniformly mix with the adhesive composition, .

Thereafter, the mixture is molded into various forms such as powder, pellet, or filament to form a quantum dot bead molded body (S210).

More specifically, after the mixture is formed, pressure or heat is removed and the mixture solidifies to form a powder. The powdery quantum dot bead formed body 100-1 can be formed. In the state where the resin mixture maintains the adhesive force, To form a filament or pellet-shaped quantum dot bead molded body 100-2 (see Fig. 10).

The formed quantum dot bead according to an embodiment of the present invention formed by such a method has adhesiveness when heat or pressure is applied again, and it can be made into another type of product by using the stickiness.

That is, the quantum dot bead molded product according to an embodiment of the present invention is a FDN (Fused Deposition Modeling) 3D printer that forms a 3D object by laminating a thin filament thermoplastic material in a nozzle in a thin film form, a solid powder sintered A Selective Laser Sintering (SLS) 3D printer, a SHS (Selective Heat Sintering) 3D printer, and the like.

The quantum dot bead and the quantum dot bead compact including the same according to an embodiment of the present invention have been described with reference to specific embodiments. It is to be understood, however, that the invention is not limited to those precise embodiments, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention as claimed.

1: Quantum dot 2: Binder
3: Adhesive resin 10: Quantum dot bead
20: atomizer 21: nozzle
30: substrate 100: quantum dot bead molded article

Claims (8)

A quantum dot bead in which a plurality of quantum dots are dispersed in a solidified binder at a distance of at least a minimum distance that does not cause a Forester Resonance Energy Transfer (FRET) phenomenon. The method according to claim 1,
Wherein the minimum separation distance is 10 nm.
Applying a voltage between the nozzle of the liquid ejecting apparatus and the substrate;
Spraying a liquid quantum dot in a solution state in which quantum dots and a binder are dispersed in a solvent through the nozzle of the voltage injected liquid ejection apparatus; And
The solvent is evaporated by the electrostatic force between the nozzle and the substrate, and the binder is solidified to form a quantum dot bead before the quantum dot is agglomerated to a distance of a minimum separation distance that does not cause a Forester Resonance Energy Transfer (FRET) ;
Lt; RTI ID = 0.0 > 1, < / RTI >
1. A quantum dot bead molded article formed by mixing quantum dot beads according to claim 1 or 2 in a sticky composition having an adhesive force according to environmental conditions. 5. The method of claim 4,
Wherein the adhesive composition is a thermoplastic resin having an adhesive force by heat.
5. The method of claim 4,
Wherein the adhesive composition is a pressure plastic resin having an adhesive force by a pressure.
5. The method of claim 4,
Forms of quantum dot beads in powder, pellet, or filament form.
Mixing the thermoplastic resin or the pressure-plastic resin with the quantum dot bead according to claim 1 or 2 in a high-temperature or high-pressure environment to form a mixture; And
Forming the mixture into a molded article in the form of a powder, a pellet, or a filament;
Wherein the quantum dot bead formed body is formed on the substrate.
KR1020150183035A 2015-12-21 2015-12-21 QD Beads and Molded Product Including QD Beads KR20170074292A (en)

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KR1020150183035A KR20170074292A (en) 2015-12-21 2015-12-21 QD Beads and Molded Product Including QD Beads
KR1020180096717A KR102297782B1 (en) 2015-12-21 2018-08-20 Method for manufacturing 3d object

Applications Claiming Priority (1)

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KR1020150183035A KR20170074292A (en) 2015-12-21 2015-12-21 QD Beads and Molded Product Including QD Beads

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KR1020180096717A Division KR102297782B1 (en) 2015-12-21 2018-08-20 Method for manufacturing 3d object

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