KR20170070668A - Method for modifying surface of substrate using rare earth oxide thin film - Google Patents

Method for modifying surface of substrate using rare earth oxide thin film Download PDF

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KR20170070668A
KR20170070668A KR1020150178476A KR20150178476A KR20170070668A KR 20170070668 A KR20170070668 A KR 20170070668A KR 1020150178476 A KR1020150178476 A KR 1020150178476A KR 20150178476 A KR20150178476 A KR 20150178476A KR 20170070668 A KR20170070668 A KR 20170070668A
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substrate
thin film
rare earth
earth oxide
oxide thin
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KR101751619B1 (en
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이한보람
최준호
김형준
오일권
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인천대학교 산학협력단
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

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  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a surface modification method using a rare earth oxide thin film, and more particularly, to a method for forming a rare earth oxide (Y 2 O 3 ) on an inorganic material (Si, SiO 2 , Pt) substrate by plasma atomic layer deposition (PE- It is possible to stably maintain the hydrophobic surface even at a high temperature by minimizing the damage of the substrate during the growth of the thin film by the PE-ALD process, and it is possible to minimize damage of the substrate due to the hydrophobic property of the lower substrate, A surface modification method using a rare earth oxide thin film capable of appropriately controlling hydrophobic properties, and a surface-modified hydrophobic substrate.

Description

METHOD FOR MODIFYING SURFACE OF SUBSTRATE USING RARE EARTH OXIDE THIN FILM BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a surface modification method using a rare earth oxide thin film, and more particularly, to a method for forming a rare earth oxide (Y 2 O 3 ) on an inorganic material (Si, SiO 2 , Pt) substrate by plasma atomic layer deposition (PE- It is possible to stably maintain the hydrophobic surface even at a high temperature by minimizing the damage of the substrate during the growth of the thin film by the PE-ALD process, and it is possible to minimize damage of the substrate due to the hydrophobic property of the lower substrate, A surface modification method using a rare earth oxide thin film capable of appropriately controlling hydrophobic properties, and a surface-modified hydrophobic substrate.

There is an increasing demand for hydrophobic or water repellent materials in various fields such as semiconductor field, glass manufacturing field, construction field, display screen field, aviation field, and metal wiring field.

For this purpose, attempts have been made to hydrophobically surface-modify a hydrophilic substrate, and various products in which a hydrophilic surface is hydrophobized using, for example, an inorganic modifier such as silicon and an organic polymer modifier It has been marketed.

However, conventional inorganic hydrophobic modifiers and organic polymer modifiers generally have a problem that their thermal stability is poor and their inherent hydrophobic properties are lost at high temperatures. The poor thermal stability of such conventional reforming agents has been a major obstacle to the application to industrial fields where heat resistance is particularly required, such as jet engine parts and fireproof glass.

Plasma-Enhanced Atomic Layer Deposition (PE-ALD) has recently attracted attention as a method for depositing a metal or an oxide on a substrate such as a semiconductor.

Plasma Atomic Layer Deposition (PE-ALD) is a deposition technique introduced to supplement ALD (atomic layer deposition), which enables the reaction of source and reaction gas at low temperature using plasma, It is possible to minimize the incomplete reaction, shorten the purging time, and obtain the thin film having better characteristics compared to the atomic layer deposition (ALD) method. Particularly, the plasma atomic layer deposition (PE-ALD) has a good step coverage and can provide a great advantage in the manufacture of a nanoscale device.

However, when the hydrophobic modifier is deposited on a conventional organic substrate by using the plasma atomic layer deposition (PE-ALD) method, the thin film grows as the process progresses, damaging the lower substrate and causing morphological deformation of the substrate have.

Accordingly, it is possible to find a highly durable hydrophobic modifier capable of stably maintaining hydrophobicity even at a high temperature, and to prevent the technical disadvantage of damaging the substrate while enjoying the advantages of the plasma atomic layer deposition (PE-ALD) process A new hydrophobic surface modification method is needed.

Korean Patent Publication No. 10-2014-0093233

The present invention has been made to solve the problems of the prior art as described above, and it is an object of the present invention to greatly increase the hydrophobic property of a substrate, to stably maintain the increased hydrophobicity even at a high temperature, And to provide a hydrophobic substrate which is surface-modified by the method.

In order to accomplish the above object, the present invention provides a method for modifying a hydrophilic surface to a hydrophobic state, comprising the steps of: forming a rare earth oxide (such as Y 2 O 3 ) on a hydrophilic inorganic substrate by plasma atomic layer deposition (PE-ALD) A thin film is deposited on the surface of the rare earth oxide thin film to increase the hydrophobicity of the surface.

The present invention also provides a surface modification method using the rare earth oxide thin film, wherein the hydrophilic inorganic substrate is a silicon (Si) substrate, a silica (SiO 2 ) substrate, or a platinum (Pt) substrate.

In addition, the plasma atomic layer deposition (PE-ALD) may be performed using bis-isopropylcyclopentadienyl-di-isopropylacetamidinate-yttrium (Yerba: Y (iPrCp) 2 (N-iPr-amd)) is used as a rare earth metal precursor and an oxygen (O 2 ) plasma is used as a reaction gas.

Further, when the rare earth oxide thin film is deposited with the same thickness (for example, 20 nm), the hydrophobic property of the inorganic substrate on which the rare earth oxide thin film is not deposited is higher and the final hydrophobic property of the thin film surface on which the rare earth oxide thin film is deposited is also characterized And a surface modification method using the rare earth oxide thin film.

The hydrophilic inorganic substrate is a silicon (Si) substrate, a silica (SiO 2 ) substrate and a platinum (Pt) substrate, and the contact angles of the modified surface with water are 80.2 °, 71.2 ° and 84.2 °, respectively A surface modification method using a rare earth oxide thin film is provided.

(A) preparing a silicon (Si) substrate, a silica (SiO 2 ) substrate or a platinum (Pt) substrate as a hydrophilic inorganic substrate, removing the natural oxide film formed on the substrate and heating the substrate; b) feeding and adsorbing and purifying the vaporized yttrium precursor onto the heated inorganic substrate; And c) forming and purifying a yttrium oxide (Y 2 O 3 ) thin film by contacting and reacting an oxygen (O 2 ) plasma on the yttrium precursor adsorbed inorganic substrate, wherein yttrium oxide (Y 2 O 3 ) Thin film is deposited in a thickness of 20 nm, and the b) and c) are repeatedly performed in sequence until the thin film is deposited to a thickness of 20 nm.

According to another aspect of the present invention, there is provided a surface-modified substrate in which a rare-earth oxide thin film is deposited according to the above-described modification method to increase hydrophobicity of the surface.

Specifically, the surface-modified substrate is used as a material of a water-repellent glass, a metal wiring, a semiconductor substrate, or a jet engine part.

The present invention uses a rare earth oxide (e.g., Y 2 O 3 ) as a deposition material for hydrophilizing a hydrophilic surface, so that it can stably maintain a hydrophobic surface even at a relatively harsh high temperature.

In addition, by using the plasma atomic layer deposition (PE-ALD) method, the rare-earth oxide thin film can be precisely deposited with a very thin thickness of about 20 nm, the process can be completed at a low temperature in a short period of time and the incomplete reaction can be minimized And a high quality thin film excellent in step coverage can be formed.

Further, by using a predetermined inorganic material (e.g., Si, SiO 2, and Pt) substrate as the base substrate, damage and morphological deformation of the lower substrate caused by the plasma atomic layer deposition (PE-ALD) process can be prevented.

Particularly, it has been confirmed that the final hydrophobic property is changed according to the characteristics of the lower surface even when the thin rare-earth oxide thin film having the same thickness is deposited. As a result, the final hydrophobic property of the surface can be appropriately controlled There is an advantage.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing changes in contact angle before and after deposition of Y 2 O 3 on a Si substrate according to a first embodiment of the present invention; FIG.
FIG. 2 is a graph showing changes in contact angle before and after deposition of Y 2 O 3 on a SiO 2 substrate according to a second embodiment of the present invention. FIG.
FIG. 3 is a graph showing contact angle changes before and after depositing Y 2 O 3 on a Pt substrate according to a third embodiment of the present invention. FIG.

Hereinafter, the present invention will be described in detail.

The surface modification method using the rare earth oxide thin film according to the present invention is characterized in that,

As a method for hydrophilizing a hydrophilic surface, a rare-earth oxide thin film is deposited on a hydrophilic inorganic substrate by a plasma-enhanced atomic layer deposition (PE-ALD) method to increase the hydrophobicity of the surface .

Specifically, by using an inorganic substrate as a substrate, a rare earth oxide as a hydrophobic modifier, and PE-ALD as a thin film deposition method in particular, it is possible to improve the hydrophobic property of the surface, high temperature stability, process efficiency, The effect of

As the hydrophilic inorganic substrate, an inorganic substrate which is resistant to adverse effects such as morphology change due to a plasma atomic layer deposition (PE-ALD) process and can maintain its inherent characteristics is used, ) Substrate, a silica (SiO 2 ) substrate, or a platinum (Pt) substrate is used.

When the lower substrate is an organic substrate, the contact angle is not greatly increased even if Y 2 O 3 is deposited, and when the growth of the thin film by the PE-ALD is performed, the substrate itself is damaged and the surface morphology changes. On the other hand, when the above-mentioned inorganic substrate was used, it was confirmed that the contact angle was greatly increased by Y 2 O 3 deposition and the characteristics of the lower substrate were not affected by the PE-ALD process.

As the rare earth oxide, yttria (Y 2 O 3 ) is preferably used. Yttrium oxide (Y 2 O 3 ) is excellent in thermal stability, heat resistance, and durability, and has an advantage that the hydrophobicity of the surface can be stably maintained even at a high temperature.

The rare-earth metal precursor may be applied to the ALD method during the plasma atomic layer deposition (PE-ALD), for example, a metal organic, a halogenated Metal halide and the like can be used, and preferably bis-isopropylcyclopentadienyl-di-isopropylacetamidinate-yttrium (Yerba: Y (iPrCp ) 2 (N-iPr-amd)) is used as a rare earth metal precursor.

In addition, oxygen (O 2 ) plasma is preferably used as a reaction gas for reaction with the adsorbed rare earth metal precursor.

According to the present invention, even when the rare earth oxide thin film is deposited with the same thickness (for example, 20 nm), the higher the surface hydrophobic property of the lower substrate on which the rare earth oxide (e.g., Y 2 O 3 ) thin film is not deposited, The final hydrophobic property of the thin film surface on which the thin film is deposited is also increased. That is, even if the Y 2 O 3 thin film has the same thickness, the surface hydrophobicity depends on the type of the lower substrate.

Specifically, the contact angle (CA) of water before and after the deposition of Y 2 O 3 is determined by: i) 31.6 ° → 80.2 ° when the lower substrate is a silicon (Si) substrate, ii) 2 ) when the substrate was 20.2 ° → 71.2 °, and iii) when the lower substrate was a platinum (Pt) substrate, the contact angle was changed from 67.6 ° to 84.2 °. As the contact angle of the bare substrate itself was larger, ) And relatively large was confirmed through experiments (see Figs. 1 to 3).

On the other hand, when the thickness of the rare-earth oxide thin film is suitably about 20 nm, it is possible to effectively prevent damage to the lower substrate while imparting high hydrophobicity at such a thickness.

In one embodiment, the surface modification method using the rare earth oxide thin film of the present invention comprises:

a silicon (Si) substrate, a silica (SiO 2 ) substrate or a platinum (Pt) substrate is prepared as a hydrophilic inorganic substrate before performing the cycle a), a native oxide formed on the substrate is removed, (For example, 300 DEG C)

b) adsorbing (adsorbing) a vaporized yttrium precursor onto the heated inorganic substrate, and removing the unadsorbed precursor through the purging gas; And

c) contacting an oxygen (O 2 ) plasma with an yttrium precursor adsorbed inorganic substrate and reacting with a yttrium precursor to form a yttrium oxide (Y 2 O 3 ) thin film, passing a gas (O 2 ) plasma through the purging gas May be performed in a cyclic manner by sequentially repeating the process until a yttrium oxide (Y 2 O 3 ) thin film is deposited to a thickness of 20 nm.

According to another aspect of the present invention, there is provided a surface-modified substrate in which a rare-earth oxide thin film is deposited according to the above-described method to increase the hydrophobicity of the surface.

The surface-modified substrate according to the present invention can be applied to a wide variety of applications requiring hydrophobic to water repellency. For example, water-repellent glass such as a front window for automobiles and airplanes, various metal wirings that require prevention of short-circuit by moisture, and semiconductor substrates can be applied. Particularly, in the fields of jet engines, It can be used very well as material.

Hereinafter, the present invention will be described more specifically by way of examples. However, these examples are provided only for the understanding of the present invention, and the scope of the present invention is not limited to these examples in any sense.

Example 1

First, a natural oxide film of a silicon substrate (Si (100) p-type) was removed as a hydrophilic inorganic substrate and then heated to 300 캜.

Then, i) Yerba, a yttrium precursor vaporized onto the heated inorganic substrate, was administered with carrier gas (Ar) for 3 seconds. At this time, to obtain a proper vapor pressure of the yttrium precursor, a bubbler containing the precursor was heated to 78 ° C, and the flow rate of the carrier gas was maintained at 50 sccm.

Then, ii) an excess precursor other than the yttrium precursor physically or chemically adsorbed on the silicon substrate was removed by supplying argon purging gas at a flow rate of 50 sccm for 3 seconds.

Then, iii) an oxygen (O 2 ) plasma was applied onto the yttrium precursor adsorbed inorganic substrate to react with the adsorbed yttrium precursor to form a yttrium oxide (Y 2 O 3 ) thin film. At this time, oxygen (O 2 ) plasma formation is remote type, and oxygen (O 2 ) gas which is injected from the upper part passes through the inside of quartz tube wound with Au-plated RF coil (O 2 ) plasma reacted with the silicon substrate located in the main chamber connected to the bottom of the quartz tube (*). The plasma was generated by a high frequency (RF, 13.56 MHz) Coupled Plasma (ICP)). The flow rate of oxygen (O 2 ) was 200 sccm, the power of the plasma was 300 W, and the basic exposure time was maintained at 6 seconds.

Then, iv) an excess of oxygen (O 2 ) plasma was removed by supplying argon purging gas at a flow rate of 50 sccm for 3 seconds.

The cycle consisting of i) to iv) was repeated until a yttrium oxide (Y 2 O 3 ) thin film was deposited to a thickness of 20 nm.

Example  2

Except that a silica (SiO 2 ) substrate was used as the inorganic substrate.

Example 3

Except that a platinum (Pt) substrate was used as the inorganic substrate.

Comparative Example  One

The obtained silicon substrate (Si (100) p-type) was used without deposition of a yttrium oxide (Y 2 O 3 ) thin film.

Comparative Example 2

The obtained silica (SiO 2 ) substrate was used without deposition of yttrium oxide (Y 2 O 3 ) thin film.

Comparative Example 3

The obtained platinum (Pt) substrate was used without deposition of yttrium oxide (Y 2 O 3 ) thin film.

Comparative Example  4

Except that a polyimide (PI) substrate was used as the substrate.

Experimental Example : Measurement of contact angle change

The contact angles of the deionized water droplets on the surfaces according to Examples 1 to 3 and Comparative Examples 1 to 3 were measured and shown in Table 1 and Figs. 1 to 3, respectively.

Contact angle (CA) Without Y 2 O 3 20 nm Y 2 O 3 Si 31.6 80.2 SiO 2 20.2 71.2 Pt 67.6 84.2

As shown in Table 1, the substrate having the yttria (Y 2 O 3 ) thin film deposited thereon greatly improves the hydrophobic property by greatly increasing the contact angle with respect to the bare substrate.

In addition, even if a yttrium oxide (Y 2 O 3 ) thin film is deposited with the same thickness (20 nm), the higher the surface hydrophobicity of the bare substrate, the higher the final hydrophobic property of the thin film surface deposited with yttrium oxide (Y 2 O 3 ) Respectively.

On the other hand, in Comparative Example 4 using an organic (PI) substrate as the substrate, it was confirmed that the CA value before and after the deposition of the yttrium oxide (Y 2 O 3 ) film was insignificant, This is because the lower substrate was damaged during the growth of the thin film by the above method.

Claims (13)

A method for modifying a hydrophilic surface to be hydrophobic,
Characterized in that a rare-earth oxide thin film is deposited on a hydrophilic inorganic substrate by plasma atomic layer deposition (PE-ALD) to increase the hydrophobicity of the surface.
Surface Modification Method Using Rare Earth Oxide Thin Films.
The method according to claim 1,
Wherein the hydrophilic inorganic substrate is a silicon (Si) substrate, a silica (SiO 2 ) substrate, or a platinum (Pt) substrate.
The method according to claim 1,
Wherein the rare earth oxide is yttrium oxide (Y 2 O 3 ).
The method according to claim 1,
The plasma atomic layer deposition (PE-ALD) is a method of depositing bis-isopropylcyclopentadienyl-di-isopropylacetamidate-yttrium (YrPrCp) 2 (N-iPr- Wherein the rare earth oxide thin film is used as a surface modification method.
The method according to claim 1,
Wherein the plasma atomic layer deposition (PE-ALD) uses an oxygen (O 2 ) plasma.
The method according to claim 1,
When the rare earth oxide thin film was deposited with the same thickness,
Wherein the hydrophobic property of the inorganic substrate on which the rare earth oxide thin film is not deposited is higher, and the final hydrophobic property of the thin film surface on which the rare earth oxide thin film is deposited is also increased, the surface modification method using the rare earth oxide thin film.
The method according to claim 6,
Wherein the rare earth oxide thin film is deposited to a thickness of 20 nm.
8. The method of claim 7,
Wherein the hydrophilic inorganic substrate is a silicon (Si) substrate, and the contact angle of the modified surface with respect to water is 80.2 [deg.].
8. The method of claim 7,
Wherein the hydrophilic inorganic substrate is a silica (SiO 2 ) substrate, and the contact angle of the modified surface with water is 71.2 °.
8. The method of claim 7,
Wherein the hydrophilic inorganic substrate is a platinum (Pt) substrate, and the contact angle of the modified surface with respect to water is 84.2 DEG.
The method according to claim 1,
a) preparing a silicon (Si) substrate, a silica (SiO 2 ) substrate or a platinum (Pt) substrate as a hydrophilic inorganic substrate, removing the native oxide film formed on the substrate and heating the substrate;
b) feeding and adsorbing and purifying the vaporized yttrium precursor onto the heated inorganic substrate; And
c) forming and purging a yttrium oxide (Y 2 O 3 ) thin film by contacting and reacting an oxygen (O 2 ) plasma on an inorganic substrate on which an yttrium precursor has been adsorbed,
Characterized in that the steps b) and c) are repeatedly carried out in sequence until the yttrium oxide (Y 2 O 3 ) thin film is deposited to a thickness of 20 nm.
Surface Modification Method Using Rare Earth Oxide Thin Films.
The surface-modified substrate according to any one of claims 1 to 11, wherein a rare earth oxide thin film is deposited to increase hydrophobicity of the surface.
13. The method of claim 12,
Wherein the surface-modified substrate is used as a material of a water-repellent glass, a metal wiring, a semiconductor substrate, or a jet engine part.
















KR1020150178476A 2015-12-14 2015-12-14 Method for modifying surface of substrate using rare earth oxide thin film KR101751619B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108977782A (en) * 2018-07-30 2018-12-11 杭州电子科技大学 It is a kind of to consolidate durable hydrophobic coating and preparation method thereof, application for a long time
US11651900B2 (en) 2019-09-20 2023-05-16 Samsung Electro-Mechanics Co., Ltd. Multilayer electronic component having moisture-proof layer on body thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013141877A1 (en) 2012-03-23 2013-09-26 Massachusetts Institute Of Technology Hydrophobic materials incorporating rare earth elements and methods of manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108977782A (en) * 2018-07-30 2018-12-11 杭州电子科技大学 It is a kind of to consolidate durable hydrophobic coating and preparation method thereof, application for a long time
CN108977782B (en) * 2018-07-30 2020-12-25 杭州电子科技大学 Long-term stable and durable hydrophobic coating and preparation method and application thereof
US11651900B2 (en) 2019-09-20 2023-05-16 Samsung Electro-Mechanics Co., Ltd. Multilayer electronic component having moisture-proof layer on body thereof

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