KR20170069365A - Direct cooling type power module and method for manufacturing the same - Google Patents

Direct cooling type power module and method for manufacturing the same Download PDF

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Publication number
KR20170069365A
KR20170069365A KR1020150176257A KR20150176257A KR20170069365A KR 20170069365 A KR20170069365 A KR 20170069365A KR 1020150176257 A KR1020150176257 A KR 1020150176257A KR 20150176257 A KR20150176257 A KR 20150176257A KR 20170069365 A KR20170069365 A KR 20170069365A
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KR
South Korea
Prior art keywords
substrate
metal layer
cooling
cooling water
power module
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Application number
KR1020150176257A
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Korean (ko)
Inventor
이현구
장기영
박성민
손정민
전우용
그라스만 안드레아스
Original Assignee
현대자동차주식회사
인피니언 테크놀로지스 아게
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Priority to KR1020150176257A priority Critical patent/KR20170069365A/en
Publication of KR20170069365A publication Critical patent/KR20170069365A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A direct cooling type power module and a manufacturing method thereof that can realize a cost saving, an improvement in durability performance, and a simplification of a manufacturing process by forming a heat radiation fin for direct heat radiation to a metal layer formed on one surface of a substrate are disclosed. The direct cooling type power module includes: a substrate having a dielectric layer and first and second metal layers formed on both surfaces of the dielectric layer; A semiconductor element electrically connected to the first metal layer; And a plurality of cooling fins formed on a surface of the second metal layer. The surface of the second metal layer and the cooling fin can be in direct contact with the cooling water.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a direct cooling type power module,

The present invention relates to a direct cooling type power module and a manufacturing method thereof. More particularly, the present invention relates to a direct cooling type power module and a manufacturing method thereof. More particularly, the present invention relates to a direct cooling type power module, Cooling type power module and a manufacturing method thereof.

Power converters (for example, inverters), which are one of the key components of hybrid cars and electric vehicles, are a major component of eco-friendly vehicles, and many technologies have been developed. Power modules, which are the core components of power converters Is a key technology in the field of environmentally friendly vehicles.

The key technology development points of power module are cost reduction and cooling performance improvement. As the cooling performance of the power module is improved, the rated current of the IGBT and diode, which are currently used power semiconductor elements, can be lowered and the size of the chip size can be reduced, so that the chip cost can be reduced and the power module can be operated stably Do.

Therefore, technology for improving the cooling performance of the power module has been actively developed, and the technology for the two-sided cooling, the one-sided cooling, and the shape and the bonding of the efficient cooler are mainly developed.

Conventional power module technology is divided into section cooling and double-sided cooling according to the cooling surface, and it is divided into indirect cooling and direct cooling depending on the cooling type.

The indirect indirect cooling is achieved by soldering the substrate to the base plate, which serves as a heat spreader, and then joining the cooler with thermal interface material (TIM), usually thermal grease. Because the thermal conductivity of the TIM drops, the overall thermal performance of the inverter is lower than direct cooling.

One-sided direct cooling is a method in which a part of the module is directly brought into contact with the cooler flow path and cooled. At this time, in order to widen the contact surface with the cooling water, a base plate having a cooling fin mainly is used.

Two-sided indirect cooling is proposed to compensate for the drawback that the cooling performance of the indirect cooling is low. The substrate is located on both sides of the semiconductor device, and the two substrates and the cooler are connected through the TIM. Until now, there has not been proposed a double-sided direct cooling system.

Conventionally, a base plate having a cooling fin mainly for direct cooling has been used. The base plate having the cooling fin is mainly manufactured by brazing or die-casting, and thus the cost is high. Further, since the base plate and the substrate must be bonded (mainly soldered), there is a problem that the durability life is deteriorated.

It should be understood that the foregoing description of the background art is merely for the purpose of promoting an understanding of the background of the present invention and is not to be construed as an admission that the prior art is known to those skilled in the art.

KR 10-2015-0119302A KR 10-2015-0108363 A

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a direct cooling type power module and a manufacturing method thereof that can realize a cost saving, an improvement in durability performance, and a simplification of a manufacturing process by forming a heat radiation fin for direct heat radiation to a metal layer formed on one surface of a substrate It is a technical task.

According to an aspect of the present invention,

A substrate having a dielectric layer and first and second metal layers respectively formed on both surfaces of the dielectric layer;

A semiconductor element electrically connected to the first metal layer; And

And a plurality of cooling fins formed on a surface of the second metal layer,

Wherein the surface of the second metal layer and the cooling fin contact the cooling water directly.

One embodiment of the present invention may further include a plating layer formed on the surface of the second metal layer and the cooling fin.

One embodiment of the present invention may further include a case formed in the direction of the first metal layer of the substrate to seal the first metal layer and the semiconductor element, and a filler filled in the case.

One aspect of the present invention may further include a cooling water duct disposed on the second metal layer side of the substrate to form a passage through which the cooling water flows, wherein one surface of the cooling water duct is opened, The cooling fin can directly contact the cooling water flowing in the cooling water duct.

According to an embodiment of the present invention, the substrate may include a first substrate and a second substrate disposed on upper and lower sides of the semiconductor element, and a mold part may be formed between the first substrate and the second substrate .

One embodiment of the present invention may further include a cooling water duct disposed on a side of a second metal layer of the first substrate and the second substrate to form a passage through which cooling water flows, The surface of the second metal layer and the cooling fin can directly contact the cooling water flowing in the cooling water duct.

In one embodiment of the present invention, grooves are formed along the circumference of the first substrate and the second substrate on the top and bottom surfaces of the mold part exposed in both side directions of the first substrate and the second substrate, An O-ring can be disposed which is in contact with the duct to form a watertight structure for the cooling water inside the cooling water duct.

According to another aspect of the present invention,

Fabricating a base structure including a substrate having a dielectric layer and first and second metal layers formed on both sides of the dielectric layer, and a semiconductor device electrically connected to the first metal layer; And

Bonding the cooling fins to the surface of the second metal layer by a room-temperature bonding method;

The present invention provides a method of manufacturing a direct cooling type power module.

In one embodiment of the present invention, the step of fabricating the base structure may include molding the first metal layer and the semiconductor element.

In one embodiment of the present invention, the room temperature bonding method may be ultrasonic welding or ultrasonic bonding.

One embodiment of the present invention may further include a step of plating the surface of the second metal layer and the surface of the cooling fin.

According to the direct cooling type power module and the method of manufacturing the same, the cooling performance of the power module can be remarkably improved by directly applying the cooling fin to one side of the substrate used for the power module. In particular, the direct cooling type power module can directly form a cooling fin in the mold type double-sided cooling power module.

In addition, the direct cooling type power module and the manufacturing method thereof can reduce the cost by removing the base plate which has been used in the prior art, and since the soldering process for joining the base plate and the substrate is not needed, the manufacturing process is simplified, The durability of the power module can be prevented from lowering, and the durability life can be improved.

Further, according to the direct cooling type power module and the manufacturing method thereof, it is possible to easily change the arrangement structure of the cooling fins by simple setting of the equipment parameters, and accordingly, the cooling water flow path can be easily changed to improve the cooling performance .

1 is a side view of a direct cooling type power module according to an embodiment of the present invention.
2 is a top view of a direct cooling power module according to an embodiment of the invention.
3 is a process sectional view showing a manufacturing method of a direct cooling type power module according to an embodiment of the present invention.
4 is a plan view showing another example of a configuration of a cooling pin arrangement applied to a direct cooling type power module according to an embodiment of the present invention.
5 is a cross-sectional view of cooling fins of various shapes applied to a direct cooling type power module according to an embodiment of the present invention.
6 is a cross-sectional view of a case type direct cooling type power module according to an embodiment of the present invention.
7 is a cross-sectional view of a mold type direct cooling type power module according to an embodiment of the present invention.

Hereinafter, a direct cooling type power module according to various embodiments of the present invention and a manufacturing method thereof will be described with reference to the accompanying drawings.

FIG. 1 is a side view of a direct cooling power module according to an embodiment of the present invention, and FIG. 2 is a plan view of a direct cooling power module according to an embodiment of the present invention.

1 and 2, a direct cooling type power module 10 according to an embodiment of the present invention includes a dielectric layer 110 and first and second metal layers 120 and 120 formed on both surfaces of the dielectric layer 110, And a plurality of cooling fins 200 formed on a surface of the semiconductor device 300 and the second metal layer 130 electrically connected to the first metal layer 120. The direct cooling type power module 10 according to an embodiment of the present invention has a structure in which coolant flows directly to the surface of the second metal layer 130 to cool the power module by discharging heat generated in the semiconductor device 300 .

The substrate 100 has metal layers 120 and 130 formed on both surfaces of the dielectric layer 110 with a dielectric layer 110 interposed therebetween. The first metal layer 120 formed on one surface of the dielectric layer 110 serves as a terminal and a wiring used for constructing a circuit through electrical contact with the semiconductor device. The second metal layer 130 formed on the other surface of the dielectric layer 110 has a structure in which cooling water can flow on the surface thereof so that the cooling water can directly contact the surface and flow.

The substrate 100 may be formed of a ceramic material as the dielectric layer 110 and a DBC substrate (direct bonded copper substrate) having a copper layer bonded to both surfaces of the dielectric layer 110.

The semiconductor device 300 may be a power semiconductor device used in a power module. If the power module forms an inverter, the semiconductor device 300 may include a semiconductor device such as a diode and a semiconductor switching device such as an IGBT.

The semiconductor device 300 may have the form of a chip having a connection terminal formed on the upper surface or the lower surface of the semiconductor device 300. The connection terminal may make electrical contact with the metal layer 120 of the substrate 100 through the solder 500 .

The radiating fin 200 may be formed directly on the surface of the second metal layer 130 of the substrate 100. The heat dissipation fin 200 is provided to further increase the area of contact with the cooling water flowing on the surface of the second metal layer 130. The heat dissipation fin 200 may be formed in various shapes as required and disposed on the surface of the second metal layer 130 The structure can be formed in various ways.

The radiating fin 200 may be made of a material such as aluminum or copper having excellent thermal conductivity and may be bonded to the surface of the second metal layer 130 by a bonding technique such as ultrasonic welding.

1 and 2, reference numeral 400 denotes a power module having a double-sided cooling structure in which a substrate 100 is provided on both sides of a semiconductor device 300, It is a structure made of conductive material. Reference numeral 600 denotes a mold part provided between the both substrates 100 to protect the semiconductor device 300 and the electrical connection structure.

The direct cooling type power module 10 according to an embodiment of the present invention has a structure in which the surface of the second metal layer 130 of the substrate 100 and the heat dissipation fin 200 are in direct contact with the cooling water, And may further include a plating layer 700 on its surface. The plating layer 700 is provided to prevent oxidation of the surface of the second metal layer 130 exposed to the cooling water and the surface of the heat dissipation fin 200 and may be formed of Ni or NiP.

3 is a process sectional view showing a manufacturing method of a direct cooling type power module according to an embodiment of the present invention.

The direct cooling type power module according to an embodiment of the present invention is a direct cooling type power module in which a substrate 100 and a semiconductor element 300 are disposed and an electrical connection is formed as shown in FIG. And the second metal layer 130 of the substrate 100 exposed to both sides as shown in FIG. 3 (b) is formed as shown in FIG. 3 (b) after forming the mold structure 600, And the cooling fins 200 are bonded to each other through ultrasonic welding. 3 (c), a plating layer 700 is formed by plating Ni or NiP on the surface of the second metal layer 130 and the surface of the heat dissipation fin 200. Next, as shown in FIG.

As shown in FIG. 3, an embodiment of the present invention forms a power module basic structure completed before the formation of the mold part 600, and then ultrasonic welding is applied to form a heat radiating fin.

With this process feature, it is possible to use a structure in which cooling pins for direct cooling are formed in a mold-type power module for double-sided cooling. Conventionally, after the molding process for forming the molded part, the base plate has to be applied to join the cooling fin structure. That is, when the soldering process is performed to form the cooling fin after the molding, not only the solder in the mold is melted due to the high temperature but also the thermal expansion coefficient of the EMC (Epoxy Mold Compound) constituting the mold part is rapidly increased, The module itself is damaged. EMC has a characteristic in which the thermal expansion coefficient rapidly changes above a predetermined threshold value. In an embodiment of the present invention, since the cooling fin is bonded to the second metal layer 130 of the substrate 100 by using ultrasonic welding at room temperature after molding, damage of the power module due to the high temperature process can be solved.

In addition, according to one embodiment of the present invention, by applying ultrasonic welding, it is possible to easily change the arrangement structure of the cooling fin 200 as shown in FIG. 4 by simply changing the ultrasonic welding angle of the welding equipment. Cooling performance can be improved. 4 is a plan view showing another example of a configuration of a cooling pin arrangement applied to a direct cooling type power module according to an embodiment of the present invention. In the case where one or more power modules are installed in one cooler, it is possible to vary the path of the cooling water by varying the arrangement of the cooling fins according to the characteristics of the cooling water, thereby optimizing the cooling. The cooling fin arrangement can be simply changed to obtain the optimum cooling performance.

 The present invention can use not only ultrasonic welding but also a metal bonding method usable at room temperature. For example, ultrasonic bonding techniques can be used to replace cooling fins with aluminum wire ribbon, copper wire ribbon, aluminum copper coated wire ribbon, and the like.

5 is a cross-sectional view of cooling fins of various shapes applied to a direct cooling type power module according to an embodiment of the present invention.

According to the embodiment of the present invention, the shape of the cooling fin 200 can be variously modified as shown in Fig. 5 to obtain the optimum cooling performance in accordance with the cooling channel.

6 is a cross-sectional view of a case type direct cooling type power module according to an embodiment of the present invention.

6, a case-type direct cooling type power module is formed by applying a single substrate 100 and mounting a semiconductor device 300 on a surface of a first metal layer 120 of the substrate 100 through a solder 500 After the bonding, the semiconductor device 300 and the first metal layer 120 are sealed by covering the case 800. The inner space of the case 800 may be filled with a filler such as EMC.

A cooling water duct 900 for forming a cooling water path is disposed in the direction of the second metal layer 130 of the substrate 100. One surface of the cooling water duct 900 is opened to open the surface of the second metal layer 130 and the cooling fin 200 Can directly contact the cooling water.

7 is a cross-sectional view of a mold type direct cooling type power module according to an embodiment of the present invention. 7 is a double-sided cooling type power module, which includes a first substrate and a second substrate on the upper and lower sides. 1, a first metal layer 120 and a second metal layer 130 are formed on the first metal layer 120 and the second metal layer 130. The first metal layer 120 and the second metal layer 130 are electrically connected to the semiconductor element 300, And a dielectric layer 110 between the first metal layer 120 and the second metal layer 130.

The semiconductor element 300 is electrically connected to the first and second substrates by using the first metal layer 120 and the solder 500 to keep the gap between the first and second substrates constant The spacer 400 may be applied as needed. In addition, a mold part 600 may be formed between the first substrate and the second substrate to protect the semiconductor device 300 and the electrical connection structure.

A cooling water duct 900 for forming a cooling water channel is disposed on the first substrate and the second substrate on the second metal layer 130. One surface of the cooling water duct 900 is opened, The surface of the cooling fin 130 and the cooling fin 200 can be directly contacted with the cooling water.

In the embodiment of FIG. 7, grooves may be formed along the outer periphery of the substrate 100 on the upper and lower surfaces of the mold parts exposed in the lateral direction of the substrate 100. And the water-tight structure can be easily formed by fixing the cooling water duct 900 and the power module in a state where the O-ring is disposed in the groove and the O-ring is in contact with a part of the cooling water duct 900.

Although the present invention has been shown and described with respect to specific embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as hereinafter claimed It will be apparent to those of ordinary skill in the art.

10: direct cooling type power module 100: substrate
110: dielectric layer 120: first metal layer
130: second metal layer 200: cooling pin
300: Semiconductor device 400: Spacer
500: solder 600: mold part
700: Plated layer 800: Case
900: Cooling water duct 910: O-ring

Claims (11)

A substrate having a dielectric layer and first and second metal layers respectively formed on both surfaces of the dielectric layer;
A semiconductor element electrically connected to the first metal layer; And
And a plurality of cooling fins formed on a surface of the second metal layer,
Wherein the second metal layer surface and the cooling fin are in direct contact with the cooling water. The method according to claim 1,
And a plating layer formed on a surface of the second metal layer and the cooling fin. The method according to claim 1,
A case formed in the first metal layer direction of the substrate to seal the first metal layer and the semiconductor element, and a filler filled in the case. The method of claim 3,
And a cooling water duct disposed on the second metal layer side of the substrate to form a passage through which the cooling water flows,
Wherein one side of the cooling water duct is opened such that the surface of the second metal layer and the cooling fin directly contact the cooling water flowing in the cooling water duct. The method according to claim 1,
Wherein the substrate includes a first substrate and a second substrate disposed on upper and lower sides of the semiconductor device, and a mold part is formed between the first substrate and the second substrate. The method of claim 5,
Further comprising a cooling water duct disposed on a side of a second metal layer of the first substrate and the second substrate to form a passage through which cooling water flows,
Wherein one side of the cooling water duct is opened such that the surface of the second metal layer and the cooling fin directly contact the cooling water flowing in the cooling water duct. The method of claim 6,
Wherein grooves are formed along the periphery of the first substrate and the second substrate on the upper and lower surfaces of the mold part exposed in both sides of the first substrate and the second substrate and the grooves are in contact with the cooling water duct, And an O-ring for forming a watertight structure with respect to the cooling water of the direct cooling type power module. Fabricating a base structure including a substrate having a dielectric layer and first and second metal layers formed on both sides of the dielectric layer, and a semiconductor device electrically connected to the first metal layer; And
Bonding the cooling fins to the surface of the second metal layer by a room-temperature bonding method;
Wherein the power module comprises a plurality of power modules. The method of claim 8,
Wherein the step of fabricating the base structure comprises molding the first metal layer and the semiconductor device. The method of claim 8,
Wherein the room-temperature bonding method is ultrasonic welding or ultrasonic bonding. The method of claim 8,
Further comprising plating the surface of the second metal layer and the surface of the cooling fin.
KR1020150176257A 2015-12-10 2015-12-10 Direct cooling type power module and method for manufacturing the same KR20170069365A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114175243A (en) * 2019-07-25 2022-03-11 日立能源瑞士股份公司 Arrangement of a power semiconductor module and a cooler
KR20220167036A (en) * 2021-06-11 2022-12-20 제엠제코(주) Cooling system for semiconductor component having semiconductor chip with cooling apparatus
US11908766B2 (en) 2021-04-05 2024-02-20 Jmj Korea Co., Ltd. Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined
US11923262B2 (en) 2020-11-09 2024-03-05 Denso Corporation Electrical apparatus
WO2024183655A1 (en) * 2023-03-03 2024-09-12 比亚迪股份有限公司 Power module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114175243A (en) * 2019-07-25 2022-03-11 日立能源瑞士股份公司 Arrangement of a power semiconductor module and a cooler
US11923262B2 (en) 2020-11-09 2024-03-05 Denso Corporation Electrical apparatus
US11908766B2 (en) 2021-04-05 2024-02-20 Jmj Korea Co., Ltd. Cooling system where semiconductor component comprising semiconductor chip and cooling apparatus are joined
KR20220167036A (en) * 2021-06-11 2022-12-20 제엠제코(주) Cooling system for semiconductor component having semiconductor chip with cooling apparatus
WO2024183655A1 (en) * 2023-03-03 2024-09-12 比亚迪股份有限公司 Power module

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