KR20170069363A - Binder for power module and method for bonding using thereof - Google Patents
Binder for power module and method for bonding using thereof Download PDFInfo
- Publication number
- KR20170069363A KR20170069363A KR1020150176229A KR20150176229A KR20170069363A KR 20170069363 A KR20170069363 A KR 20170069363A KR 1020150176229 A KR1020150176229 A KR 1020150176229A KR 20150176229 A KR20150176229 A KR 20150176229A KR 20170069363 A KR20170069363 A KR 20170069363A
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- South Korea
- Prior art keywords
- solder
- bonding
- power module
- semiconductor chip
- substrate
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
A bonding material for a power module and a method for bonding a power module using the same according to the present invention is a bonding material for bonding a substrate of a power module to a semiconductor chip and melting and coagulating between the substrate and the semiconductor chip, , A solder to be electrically bonded, and a reinforcing member inserted in the solder to improve the tensile strength of the solder.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a bonding material for a power module and a method of bonding a power module using the same. More particularly, the present invention relates to a bonding material for a power module having improved tensile strength and a method of bonding a power module using the same.
In order to manufacture the power module, a soldering process using a metal is required as an adhesive. Typically, the power module is composed of a ceramic substrate on which a metal is attached, a semiconductor chip, and a bonding material (solder) for connecting each member. In order for the power module to operate, each member must be physically and electrically connected, and such connection is commonly used through a soldering process. Soldering is a process in which each member is placed in a heating furnace which can be heated above the melting point of the solder and heated to melt and coagulate the solder. In general, the solder used in the soldering process must be a solderable material within a predetermined temperature at which the peripheral members are not damaged.
In the semiconductor chip of the power module, heat is generated as electric current flows, and generated heat is transferred to the solder portion. Large thermal stress and thermal fatigue are caused by the difference in thermal expansion coefficient between the semiconductor chip and ceramic having a small thermal expansion coefficient and the metal electrode portion having a large thermal expansion coefficient due to the transferred heat.
Fig. 1 shows a breakdown of the
1 (a), the
However, when heat resistance heat generation occurs due to the continued operation, cracks are generated in the
Therefore, solder alloys require excellent mechanical properties, thermal fatigue properties, and corrosion resistance. Failure of the solder material due to harsh environment will cause the physical and electrical connection of the power module to be lost, which is the main cause of failure of the power module.
In recent years, as semiconductor integration, miniaturization, and high performance have progressed, a harsh environment has been applied to solder joints of power modules, which requires more excellent characteristics than conventional solders. Therefore, there is a demand for a bonding material and a bonding method that can maintain the physical and electrical connection of the power module in a harsh operating environment and achieve durability and life span improvement.
It is an object of the present invention to provide a bonding material for a power module and a method of bonding a power module using the same, which can prevent thermal fatigue failure by improving tensile strength.
In order to achieve the above object, a bonding material for a power module according to an embodiment of the present invention is a bonding material for bonding a substrate of a power module to a semiconductor chip, wherein the bonding material is melted and solidified between the substrate and the semiconductor chip, A solder for mechanically and electrically bonding the chip, and a reinforcement inserted into the solder to improve the tensile strength of the solder.
The reinforcing material is formed in a metal mesh shape, and the solder is formed of a tin alloy material containing at least one of copper and silver, and is integrally formed by completely enclosing the mesh of the reinforcing material.
The reinforcing material is formed of any one of Al, Cu, Ni, Co, and Mo.
The reinforcing material is formed of an alloy material containing at least one of Al, Cu, Ni, Co, and Mo.
The reinforcing member is formed in a mesh shape having an eye of any one of a square, a rectangle, a rhombus, and a triangle.
A power module joining method using a joining material for a power module is a method of joining a substrate of a power module and a semiconductor chip using a joining material and includes a solder and a joining material And arranging the bonding material between the substrate and the semiconductor chip and heating the bonding material to bond the substrate and the semiconductor chip.
The step of preparing the bonding material may include the steps of disposing solder on both sides of a stiffener formed in a mesh shape, and the bonding step is a step of disposing the bonding material stacked in the order of the solder-stiffener-solder between the substrate and the semiconductor chip And heating the bonding material so that the solder is drawn into the mesh holes of the reinforcing material to integrate the solder and the reinforcing material.
In the step of preparing the bonding material, a reinforcing material formed in a mesh shape is inserted into the molten solder, and the solder is solidified to integrate the solder and the reinforcing material.
The step of preparing the bonding material is characterized in that solder is plated on a stiffener formed in a mesh shape.
Wherein the solder is formed of a tin alloy material containing at least one of copper and silver and the reinforcing material is one of Al, Cu, Ni, Co, and Mo or a material selected from the group consisting of Al, Cu, Ni, Co, and Mo And is formed of an alloy material including at least one of them.
According to the bonding material for a power module and the method of joining a power module using the bonding material according to the present invention, the following effects can be obtained.
First, the tensile strength of the solder can be improved to prevent thermal stress and breakage due to thermal fatigue.
Secondly, the application is simple and conventional machining methods and mechanisms can be utilized.
Third, the life of the power module and the durability of the power module can be improved by preventing the damage of the power module.
FIG. 1 is a schematic view of a power module, showing solder breakage,
FIG. 2 is a view illustrating a bonding material according to various embodiments of the present invention. FIG.
3 is a view illustrating a stiffener according to various embodiments of the present invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms as used herein include plural forms as long as the phrases do not expressly express the opposite meaning thereto. Means that a particular feature, region, integer, step, operation, element and / or component is specified, and that other specific features, regions, integers, steps, operations, elements, components, and / And the like.
Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Commonly used predefined terms are further interpreted as having a meaning consistent with the relevant technical literature and the present disclosure, and are not to be construed as ideal or very formal meanings unless defined otherwise.
Hereinafter, a bonding material for a power module according to a preferred embodiment of the present invention and a method of joining a power module using the bonding material will be described with reference to the accompanying drawings.
First, the bonding material for the power module will be described.
The bonding material according to the present invention is for bonding the
As the
However, the alloys described above have a problem of low tensile strength. When Sn-0.7Cu is 30 MPa, Sn-3.5Ag is 38 MPa, and Sn-3.0Ag-0.5Cu is 46.2 MPa, fatigue failure may occur when the expansion and contraction are repeated by heating by energization.
In order to solve this problem, in the present invention, the
In order to meet this purpose, the
It is preferable that the reinforcing
Although the shape of the mesh is not particularly limited, it is preferable that the shape of the mesh eyes is a polygonal shape such as a square, a rectangle, a rhombus, or a triangle for the convenience of manufacturing. Examples of such a mesh shape are shown in FIG.
Further, it is preferable that the reinforcing
The reinforcing
All of these elements have a higher tensile strength than the tin alloy, and thus can serve as a reinforcing
On the other hand, the above-described power module joining method using the joining material for a power module can be roughly classified into a step of preparing a joining material and a joining step.
The step of preparing the bonding material is a step of integrating the
First, as shown in FIG. 2 (a), the
When this method is used, the bonding material of the present invention can be applied in such a manner that a stiffener is disposed between two solder layers of about half the thickness of the
Secondly, as shown in FIG. 2 (b), molten solder is put in a state where a reinforcing material is placed in a mold, and the reinforcing
When this method is used, the manufacturing process of the bonding material may be slightly complicated, but the soldering process itself can be carried out in the same manner as in the prior art.
Third, as shown in FIG. 2 (c), the
That is, the shape of the
By using such a method, it is possible to minimize the amount of solder used, thereby reducing cost and weight, and preventing the solder from protruding between the
At this time, the strength is reduced as much as the
Other explanations will be omitted because they are the same as those of the bonding material for a power module described above.
While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand.
It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention .
10: semiconductor chip 20: substrate
21: metal part 22: ceramic part
100: Solder 200: Stiffener
Claims (10)
A solder that is melted and solidified between the substrate and the semiconductor chip to mechanically and electrically bond the substrate and the semiconductor chip; And
A reinforcing material inserted into the solder to improve the tensile strength of the solder; Wherein the joining material for the power module comprises:
Wherein the reinforcing member is formed in a mesh-like shape of a metal material,
Wherein the solder is formed of a tin alloy material containing at least one of copper and silver, and is integrally formed by completely enclosing the mesh of the reinforcing material.
Wherein the reinforcing material is made of any one of Al, Cu, Ni, Co, and Mo.
Wherein the reinforcing material is formed of an alloy material containing at least one of Al, Cu, Ni, Co, and Mo.
Wherein the reinforcing material is formed in a mesh shape having an eye of any one of a square, a rectangle, a rhombus, and a triangle.
Preparing a bonding material composed of solder and a reinforcing material inserted into the solder to improve the tensile strength of the solder; And
And bonding the substrate and the semiconductor chip by arranging the bonding material between the substrate and the semiconductor chip and heating the bonding material to bond the substrate and the semiconductor chip.
Wherein the step of preparing the bonding material includes the steps of disposing solders on both surfaces of a stiffener formed in a mesh shape,
Wherein the bonding step includes disposing the bonding material stacked in the order of the solder, the stiffener and the solder between the substrate and the semiconductor chip, heating the bonding material so that the solder is drawn between the mesh eyes of the reinforcing material, Wherein the joining material for the power module is integrated with the joining material for the power module.
Wherein the step of preparing the bonding material comprises the step of inserting a reinforcing material formed in a mesh shape into the molten solder and solidifying the solder to integrate the solder and the reinforcing material.
Wherein the step of preparing the bonding material comprises plating a solder on a stiffener formed in a mesh shape.
The solder is formed of a tin alloy material containing at least one of copper and silver,
Wherein the reinforcing material is formed of an alloy material comprising any one of Al, Cu, Ni, Co, and Mo or one or more of Al, Cu, Ni, Co, and Mo. Power module joining method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150176229A KR101776427B1 (en) | 2015-12-10 | 2015-12-10 | Method for bonding using binder for power module |
Applications Claiming Priority (1)
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KR1020150176229A KR101776427B1 (en) | 2015-12-10 | 2015-12-10 | Method for bonding using binder for power module |
Related Child Applications (2)
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KR1020170105894A Division KR20170100463A (en) | 2017-08-22 | 2017-08-22 | Method for bonding power module using binder for power module |
KR1020170105893A Division KR20170100462A (en) | 2017-08-22 | 2017-08-22 | Method for bonding power module using binder for power module |
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KR20170069363A true KR20170069363A (en) | 2017-06-21 |
KR101776427B1 KR101776427B1 (en) | 2017-09-08 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210129483A (en) | 2020-04-20 | 2021-10-28 | 현대자동차주식회사 | Soldering sturcture, power module comprising the same and menufacturing method for power module |
KR20210138386A (en) | 2020-05-12 | 2021-11-19 | 현대자동차주식회사 | Appartus and method for soldering |
KR20220017739A (en) | 2020-08-05 | 2022-02-14 | 현대자동차주식회사 | Power module |
KR20220017759A (en) | 2020-08-05 | 2022-02-14 | 현대자동차주식회사 | Soldering sturcture and power module comprising the same |
KR20220026868A (en) | 2020-08-26 | 2022-03-07 | 현대자동차주식회사 | Power module |
CN116779584A (en) * | 2023-08-21 | 2023-09-19 | 湖南大学 | Low-chip temperature gradient power semiconductor module packaging structure and method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001230351A (en) | 2000-02-14 | 2001-08-24 | Shibafu Engineering Corp | Joining material for electronic module, module type semiconductor device, and method of manufacturing the same |
JP2004174522A (en) * | 2002-11-25 | 2004-06-24 | Hitachi Ltd | Composite solder, production method therefor, and electronic equipment |
-
2015
- 2015-12-10 KR KR1020150176229A patent/KR101776427B1/en active IP Right Grant
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20210129483A (en) | 2020-04-20 | 2021-10-28 | 현대자동차주식회사 | Soldering sturcture, power module comprising the same and menufacturing method for power module |
US11756915B2 (en) | 2020-04-20 | 2023-09-12 | Huyndai Motor Company | Method and structure to control the solder thickness for double sided cooling power module |
KR20210138386A (en) | 2020-05-12 | 2021-11-19 | 현대자동차주식회사 | Appartus and method for soldering |
KR20220017739A (en) | 2020-08-05 | 2022-02-14 | 현대자동차주식회사 | Power module |
KR20220017759A (en) | 2020-08-05 | 2022-02-14 | 현대자동차주식회사 | Soldering sturcture and power module comprising the same |
US11862537B2 (en) | 2020-08-05 | 2024-01-02 | Hyundai Motor Company | Soldering structure with groove portion and power module comprising the same |
KR20220026868A (en) | 2020-08-26 | 2022-03-07 | 현대자동차주식회사 | Power module |
US11721613B2 (en) | 2020-08-26 | 2023-08-08 | Hyundai Motor Company | Power module |
CN116779584A (en) * | 2023-08-21 | 2023-09-19 | 湖南大学 | Low-chip temperature gradient power semiconductor module packaging structure and method |
CN116779584B (en) * | 2023-08-21 | 2023-11-03 | 湖南大学 | Low-chip temperature gradient power semiconductor module packaging structure and method |
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KR101776427B1 (en) | 2017-09-08 |
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