KR20170066307A - Charge-transporting varnish - Google Patents
Charge-transporting varnish Download PDFInfo
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- KR20170066307A KR20170066307A KR1020177002218A KR20177002218A KR20170066307A KR 20170066307 A KR20170066307 A KR 20170066307A KR 1020177002218 A KR1020177002218 A KR 1020177002218A KR 20177002218 A KR20177002218 A KR 20177002218A KR 20170066307 A KR20170066307 A KR 20170066307A
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- carbon atoms
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- transporting
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- 239000002966 varnish Substances 0.000 title claims abstract description 46
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 71
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 28
- 150000004982 aromatic amines Chemical class 0.000 claims abstract description 25
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 24
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims abstract description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 125000000962 organic group Chemical group 0.000 claims abstract description 11
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- 125000005843 halogen group Chemical group 0.000 claims description 24
- 239000002904 solvent Substances 0.000 claims description 21
- 125000003118 aryl group Chemical group 0.000 claims description 15
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 13
- 125000003172 aldehyde group Chemical group 0.000 claims description 9
- 125000003277 amino group Chemical group 0.000 claims description 9
- 125000002843 carboxylic acid group Chemical group 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 9
- 239000011964 heteropoly acid Substances 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 9
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 238000005401 electroluminescence Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 16
- -1 methoxy, ethoxy, n-propoxy Chemical group 0.000 description 93
- 229910052757 nitrogen Inorganic materials 0.000 description 56
- 229910052741 iridium Inorganic materials 0.000 description 34
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 34
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 12
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
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- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 8
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 7
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- FSEXLNMNADBYJU-UHFFFAOYSA-N 2-phenylquinoline Chemical compound C1=CC=CC=C1C1=CC=C(C=CC=C2)C2=N1 FSEXLNMNADBYJU-UHFFFAOYSA-N 0.000 description 6
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
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- 238000010438 heat treatment Methods 0.000 description 4
- 125000001072 heteroaryl group Chemical group 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
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- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 3
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- 125000003349 3-pyridyl group Chemical group N1=C([H])C([*])=C([H])C([H])=C1[H] 0.000 description 3
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
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- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 3
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 3
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- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 3
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- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- BWHOZHOGCMHOBV-BQYQJAHWSA-N trans-benzylideneacetone Chemical compound CC(=O)\C=C\C1=CC=CC=C1 BWHOZHOGCMHOBV-BQYQJAHWSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000005951 trifluoromethanesulfonyloxy group Chemical group 0.000 description 1
- DETFWTCLAIIJRZ-UHFFFAOYSA-N triphenyl-(4-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=CC(=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 DETFWTCLAIIJRZ-UHFFFAOYSA-N 0.000 description 1
- LNQMQGXHWZCRFZ-UHFFFAOYSA-N triphenyl-[4-(4-triphenylsilylphenyl)phenyl]silane Chemical group C1=CC=CC=C1[Si](C=1C=CC(=CC=1)C=1C=CC(=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 LNQMQGXHWZCRFZ-UHFFFAOYSA-N 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- C07C211/54—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to two or three six-membered aromatic rings
- C07C211/55—Diphenylamines
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- H10K50/14—Carrier transporting layers
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Abstract
식 (1)로 표시되는 아릴아민 유도체로 이루어지는 전하 수송성 물질은 유기 용매에 대한 양호한 용해성을 나타내고, 이 전하 수송성 물질을 포함하는 전하 수송성 바니시로부터 제작한 박막을 정공 주입층에 적용한 경우, 우수한 휘도 특성을 갖는 유기 EL 소자를 실현할 수 있다.
[식 중, R1∼R8은, 서로 독립하여, 수소 원자 등을 나타내고, Ar1은 페닐기 등을 나타내고, n은 1∼3의 정수를 나타내고, X는 식 (2a) 또는 (2b)로 표시되는 2가의 유기기를 나타낸다.
(식 중, R9 및 R10은, 서로 독립하여, 탄소수 1∼20의 알킬기 등을 나타내고, R11 및 R12는, 서로 독립하여, 수소 원자 또는 불소 원자를 나타내고, R13∼R20은, 서로 독립하여, 수소 원자 등을 나타내고, m은 1∼4의 정수를 나타낸다.)]The charge-transporting material comprising an arylamine derivative represented by the formula (1) shows good solubility in an organic solvent. When a thin film prepared from a charge-transporting varnish containing the charge-transporting material is applied to a hole-injecting layer, Can be realized.
Wherein Ar 1 represents a phenyl group or the like, n represents an integer of 1 to 3, and X represents a group represented by the formula (2a) or (2b): wherein R 1 to R 8 are independently of each other a hydrogen atom, Represents a divalent organic group to be represented.
(Wherein R 9 and R 10 are independently of each other an alkyl group having 1 to 20 carbon atoms and the like, R 11 and R 12 are each independently a hydrogen atom or a fluorine atom, and R 13 to R 20 are , Independently of each other, represent a hydrogen atom or the like, and m represents an integer of 1 to 4))]
Description
본 발명은 전하 수송성 바니시에 관한 것이다. The present invention relates to a charge transport varnish.
유기 일렉트로루미네슨스(이하, 유기 EL이라고 함) 소자에는, 발광층이나 전하 주입층으로서 유기 화합물로 이루어지는 전하 수송성 박막이 사용된다. 특히, 정공 주입층은 양극과, 정공 수송층 혹은 발광층과의 전하의 수수를 담당하여, 유기 EL 소자의 저전압 구동 및 고휘도를 달성하기 위해 중요한 기능을 수행한다. In organic electroluminescence (hereinafter referred to as organic EL) elements, a charge transporting thin film made of an organic compound is used as a light emitting layer or a charge injecting layer. In particular, the hole injecting layer carries out charge transfer between the anode, the hole transporting layer, or the light emitting layer, and performs an important function for achieving low voltage driving and high luminance of the organic EL element.
전하 수송성 박막의 형성 방법은 증착법으로 대표되는 건식 프로세스와, 스핀 코팅법으로 대표되는 습식 프로세스로 대별되며, 이들 각 프로세스를 비교하면, 습식 프로세스쪽이 대면적에 평탄성이 높은 박막을 효율적으로 제조할 수 있다. 그 때문에, 유기 EL 디스플레이의 대면적화가 진행되고 있는 현재, 습식 프로세스로 형성 가능한 정공 주입층이 요망되고 있다. A method of forming a charge-transporting thin film is roughly divided into a dry process represented by a vapor deposition method and a wet process represented by a spin coating method. Comparing these processes, a wet process can efficiently produce a thin film having a large flatness . For this reason, a hole injection layer capable of being formed by a wet process has been demanded at present as the organic EL display is being made larger.
그렇지만, 유기 EL 소자의 초기 특성 및 수명 특성이나 그 제조 프로세스에는 해결되지 않은 과제도 많다. 이들 여러 과제의 해결을 위해, 유기 EL 소자용의 기능성 박막 형성용 재료에 대해서는 여러 검토가 행해지고 있다. 그 일환으로서, 정공 주입성을 갖는 전하 수송성 물질에 대해서도, 검토가 행해져 왔다. However, there are many problems that are not solved in the initial characteristics and lifetime characteristics of the organic EL device and the manufacturing process thereof. In order to solve these various problems, various studies have been made on a material for forming a functional thin film for an organic EL device. As a part of this, a charge-transporting material having a hole injecting property has been studied.
정공 주입성을 갖는 전하 수송성 물질로서 아릴벤지딘 유도체가 알려져 있다. 예를 들면, 아릴벤지딘 유도체로서 테트라아릴벤지딘을 플루오렌 구조나 사이클로헥세인 구조로 가교한 것이 전하 수송성 물질로서 제안되어 있다(예를 들면, 특허문헌 1∼5 참조). An arylbenzidine derivative is known as a charge-transporting substance having a hole injecting property. For example, tetraarylbenzidine as an arylbenzidine derivative is crosslinked with a fluorene structure or a cyclohexane structure as a charge-transporting substance (see, for example, Patent Documents 1 to 5).
그렇지만, 2개의 질소 원자가 모두 수소 원자와의 결합을 갖는 아릴벤지딘 유도체의 가교체를 사용한 전하 수송성 물질에 관한 예는 아직 확인되지 않았다. However, an example of a charge-transporting material using a crosslinked product of an arylbenzidine derivative in which both nitrogen atoms have a bond with a hydrogen atom has not yet been confirmed.
본 발명은 이러한 사정을 감안하여 이루어진 것으로, 정공 주입성이 우수한 새로운 전하 수송성 물질 및 그것을 포함하는 전하 수송성 바니시, 당해 바니시로부터 얻어지는 전하 수송성 박막 및 그 제조 방법, 및 당해 박막을 갖는 유기 EL 소자를 제공하는 것을 목적으로 한다. The present invention has been made in view of the above circumstances and provides a new charge-transporting material excellent in hole injection property, a charge transporting varnish containing the same, a charge transporting thin film obtained from the varnish, a method for producing the same, and an organic EL device having the thin film .
본 발명자들은, 상기 목적을 달성하기 위해 예의 검토를 거듭한 결과, 바이페닐아민 구조를 포함하는 소정의 아릴아민 유도체가 유기 용매에 대한 우수한 용해성을 갖고, 그것을 유기 용매에 용해시켜 조제한 바니시로부터 고전하 수송성을 발휘하는 박막이 얻어지는 것, 및 당해 박막을 유기 EL 소자의 정공 주입층에 적용한 경우에, 휘도 특성이 우수한 소자가 얻어지는 것을 발견하고, 본 발명을 완성시켰다. DISCLOSURE OF THE INVENTION The inventors of the present invention have made intensive investigations in order to achieve the above object and as a result have found that a desired arylamine derivative having a biphenylamine structure has excellent solubility in an organic solvent and dissolves it in an organic solvent, It has been found that a thin film exhibiting transportability can be obtained and a device having excellent luminance characteristics can be obtained when the thin film is applied to a hole injection layer of an organic EL device.
즉, 본 발명은,That is,
1. 식 (1)로 표시되는 아릴아민 유도체로 이루어지는 것을 특징으로 하는 전하 수송성 물질,1. A charge-transporting material characterized by comprising an arylamine derivative represented by the formula (1)
[식 중, R1∼R8은, 서로 독립하여, 수소 원자, 할로젠 원자, 또는 Z1로 치환되어 있어도 되는, 탄소수 1∼20의 알킬기 혹은 탄소수 1∼20의 알콕시기를 나타내고, Ar1은 Z2로 치환되어 있어도 되는 탄소수 6∼20의 아릴기를 나타내고, n은 1∼3의 정수를 나타내고, X는 식 (2a) 또는 (2b)로 표시되는 2가의 유기기를 나타내고,[Wherein, R 1 ~R 8 are, independent from each other, represents a hydrogen atom, a halogen atom, or Z 1, which may be substituted with an alkyl or alkoxy of 1 to 20 carbon atoms having 1 to 20 carbon atoms, Ar 1 is substituted by Z 2 may represent is an aryl having a carbon number of 6~20, n represents an integer of 1~3, X denotes a divalent organic group represented by the formula (2a) or (2b),
(식 중, R9 및 R10은, 서로 독립하여, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 플루오로알킬기, Z2로 치환되어 있어도 되는 탄소수 6∼20의 아릴기를 나타내거나, R9와 R10이 결합하여, 탄소수 3∼21의 축환하고 있어도 되는 환식 탄화 수소기를 나타내고, R11 및 R12는, 서로 독립하여, 수소 원자 또는 불소 원자를 나타내고, R13∼R20은, 서로 독립하여, 수소 원자, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 플루오로알킬기, 또는 Z3을 나타내고, m은 1∼4의 정수를 나타낸다.)(Wherein R 9 and R 10 are independently of each other an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms which may be substituted with Z 2 , or R 9 And R 10 represents a cyclic hydrocarbon group which may be condensed to have 3 to 21 carbon atoms and R 11 and R 12 independently represent a hydrogen atom or a fluorine atom and R 13 to R 20 may be mutually independent A hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, or Z 3 , and m represents an integer of 1 to 4).
Z1은 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 카복실산기, 또는 Z3으로 치환되어 있어도 되는, 탄소수 6∼20의 아릴기 혹은 탄소수 2∼20의 헤테로아릴기를 나타내고, Z2는 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 카복실산기, 또는 Z3으로 치환되어 있어도 되는, 탄소수 1∼20의 알킬기, 탄소수 2∼20의 알켄일기 혹은 탄소수 2∼20의 알킨일기를 나타내고, Z3은 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 또는 카복실산기를 나타낸다.]Z 1 is a halogen atom, a group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, or an aryl group of 6 to 20 carbon atoms optionally substituted by Z 3 or a C2-nitro represents a heteroaryl group of ~20, Z 2 is a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, having 1 that may be substituted by Z 3 or An alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms; Z 3 represents a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, , Or a carboxylic acid group.
2. 상기 X가 식 (3a)∼(3h)로 표시되는 2가의 유기기로부터 선택되는 1종인 1의 전하 수송성 물질,2. One charge-transporting material selected from the bivalent organic groups represented by formulas (3a) to (3h)
3. 1 또는 2의 전하 수송성 물질을 포함하는 전하 수송성 재료,3. A charge-transporting material comprising 1 or 2 charge-transporting materials,
4. 1 또는 2의 전하 수송성 물질과, 유기 용매를 포함하는 전하 수송성 바니시,4. One or two charge-transporting substances, a charge-transporting varnish comprising an organic solvent,
5. 도판트 물질을 더 포함하는 4의 전하 수송성 바니시,5. A charge transporting varnish of 4, further comprising a dopant material,
6. 상기 도판트 물질이 헤테로폴리산을 포함하는 5의 전하 수송성 바니시,6. The charge transporting varnish of claim 5 wherein the dopant material comprises a heteropoly acid,
7. 4∼6 중 어느 하나의 전하 수송성 바니시를 사용하여 제작되는 전하 수송성 박막,7. A charge-transporting thin film produced by using any one of the charge-transporting varnishes 4 to 6,
8. 7의 전하 수송성 박막을 갖는 유기 일렉트로루미네슨스 소자,8. An organic electroluminescence device having a charge transporting thin film,
9. 4∼6 중 어느 하나의 전하 수송성 바니시를 기재 상에 도포하고, 용매를 증발시키는 것을 특징으로 하는 전하 수송성 박막의 제조 방법9. A process for producing a charge-transporting thin film, characterized in that any one of charge-transporting varnishes 4 to 6 is applied on a substrate and the solvent is evaporated
을 제공한다. .
본 발명의 전하 수송성 물질인 아릴아민 유도체는 유기 용매에 녹기 쉽고, 이것을 도판트와 함께 유기 용매에 용해시켜 용이하게 전하 수송성 바니시를 조제할 수 있다. The arylamine derivative as a charge-transporting material of the present invention is easily dissolved in an organic solvent and can be easily dissolved in an organic solvent together with a dopant to prepare a charge-transporting varnish.
본 발명의 전하 수송성 바니시로부터 제작한 박막은 높은 전하 수송성을 나타내기 때문에, 유기 EL 소자를 비롯한 전자 디바이스용 박막으로서 적합하게 사용할 수 있다. 특히, 이 박막을 유기 EL 소자의 정공 주입층에 적용함으로써 휘도 특성이 우수한 유기 EL 소자를 얻을 수 있다. The thin film produced from the charge transporting varnish of the present invention exhibits high charge transportability and can therefore be suitably used as a thin film for an electronic device including an organic EL device. In particular, by applying this thin film to the hole injection layer of the organic EL device, an organic EL device having excellent luminance characteristics can be obtained.
또한 본 발명의 전하 수송성 바니시는 스핀 코팅법이나 슬릿 코팅법 등, 대면적에 성막 가능한 각종 습식 프로세스를 사용한 경우에도 전하 수송성이 우수한 박막을 재현성 좋게 제조할 수 있기 때문에, 최근의 유기 EL 소자 분야에서의 진전에도 충분히 대응할 수 있다. Further, since the charge transporting varnish of the present invention can produce a thin film having excellent charge transportability with good reproducibility even when various wet processes such as the spin coating method and the slit coating method are used, It can cope with the progress of
또한 본 발명의 전하 수송성 바니시로부터 얻어지는 박막은 대전방지막이나 유기 박막 태양전지의 양극 버퍼층 등으로서도 사용할 수 있다. The thin film obtained from the charge transporting varnish of the present invention can also be used as an antistatic film or a positive electrode buffer layer of an organic thin film solar cell.
이하, 본 발명에 대해 더욱 상세하게 설명한다. Hereinafter, the present invention will be described in more detail.
본 발명에 따른 전하 수송성 물질은 식 (1)로 표시되는 아릴아민 유도체로 이루어진다. The charge-transporting material according to the present invention is composed of the arylamine derivative represented by the formula (1).
여기에서, 전하 수송성이란 도전성과 동일한 의미이며, 정공 수송성과 동일한 의미이다. 전하 수송성 물질은 그것 자체에 전하 수송성이 있는 것이어도 되고, 도판트 물질과 함께 사용했을 때에 전하 수송성이 있는 것이어도 된다. 전하 수송성 바니시는 그것 자체에 전하 수송성이 있는 것이어도 되고, 그것에 의해 얻어지는 고형막이 전하 수송성을 갖는 것이어도 된다. Here, charge transportability has the same meaning as conductivity and has the same meaning as hole transportability. The charge-transporting material may have a charge-transporting property itself, or may have charge-transporting property when used together with a dopant material. The charge transporting varnish may have charge transporting property itself, and the solid film obtained thereby may have charge transporting property.
식 (1)에 있어서, R1∼R8은, 서로 독립하여, 수소 원자, 할로젠 원자, 또는 Z1로 치환되어 있어도 되는, 탄소수 1∼20의 알킬기 혹은 탄소수 1∼20의 알콕시기를 나타낸다. In formula (1), R 1 to R 8 independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 20 carbon atoms or an alkoxy group having 1 to 20 carbon atoms, which may be substituted with Z 1 .
할로젠 원자로서는 불소 원자, 염소 원자, 브로민 원자, 아이오딘 원자 등을 들 수 있다. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
탄소수 1∼20의 알킬기의 구체예로서는 직쇄상, 분기쇄상, 환상의 어떤 것이어도 되고, 예를 들면, 메틸기, 에틸기, n-프로필기, 아이소프로필기, n-뷰틸기, 아아이소뷰틸기, s-뷰틸기, t-뷰틸기, n-펜틸기, n-헥실기, n-헵틸기, n-옥틸기, n-노닐기, n-데실기 등의 탄소수 1∼20의 직쇄 또는 분기쇄상 알킬기; 사이클로프로필기, 사이클로뷰틸기, 사이클로펜틸기, 사이클로헥실기, 사이클로헵틸기, 사이클로옥틸기, 사이클로노닐기, 사이클로데실기, 바이사이클로뷰틸기, 바이사이클로펜틸기, 바이사이클로헥실기, 바이사이클로헵틸기, 바이사이클로옥틸기, 바이사이클로노닐기, 바이사이클로데실기 등의 탄소수 3∼20의 환상 알킬기 등을 들 수 있다. Specific examples of the alkyl group having 1 to 20 carbon atoms may be linear, branched or cyclic, and examples thereof include a methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, A straight chain or branched chain alkyl group having 1 to 20 carbon atoms such as a butyl group, a t-butyl group, an n-pentyl group, an n-hexyl group, an n-heptyl group, ; A cyclohexyl group, a bicyclohexyl group, a bicyclohexyl group, a cyclohexyl group, a cyclohexyl group, a cyclohexyl group, a cyclohexyl group, a cyclohexyl group, a cyclopentyl group, A cyclic alkyl group having 3 to 20 carbon atoms such as a cyclopentyl group, a cyclopentyl group, a cyclopentyl group, a cyclopentyl group, a cyclopentyl group, a cyclopentyl group, a cyclopentyl group, a cyclopentyl group,
탄소수 1∼20의 알콕시기의 구체예로서는 그 중의 알킬기가 직쇄상, 분지쇄상, 환상의 어떤 것이어도 되고, 예를 들면, 메톡시기, 에톡시기, n-프로폭시기, i-프로폭시기, c-프로폭시기, n-뷰톡시기, i-뷰톡시기, s-뷰톡시기, t-뷰톡시기, c-뷰톡시기, n-펜틸옥시기, 1-메틸-n-뷰톡시기, 2-메틸-n-뷰톡시기, 3-메틸-n-뷰톡시기, 1,1-다이메틸-n-프로폭시기, c-펜틸옥시기, 2-메틸-c-뷰톡시기, n-헥실옥시기, 1-메틸-n-펜틸옥시기, 2-메틸-n-펜틸옥시기, 1,1-다이메틸-n-뷰톡시기, 1-에틸-n-뷰톡시기, 1,1,2-트라이메틸-n-프로폭시기, c-헥실옥시기, 1-메틸-c-펜틸옥시기, 1-에틸-c-뷰톡시기, 1,2-다이메틸-c-뷰톡시기, n-헵틸옥시기, n-옥틸옥시기, n-노닐옥시기, n-데실옥시기 등을 들 수 있다. As specific examples of the alkoxy group having 1 to 20 carbon atoms, the alkyl group in the alkyl group may be any of linear, branched and cyclic. Examples thereof include methoxy, ethoxy, n-propoxy, N-butoxy group, n-butoxy group, n-pentyloxy group, 1-methyl-n-butoxy group, 2-methyl-n-butyloxy group, N-butoxy group, a 1,1-dimethyl-n-propoxy group, a c-pentyloxy group, a 2-methyl- methyl-n-pentyloxy group, 1,1-dimethyl-n-butoxy group, 1-ethyl-n-butoxy group, 1,1,2- Butoxy group, n-heptyloxy group, n-octyloxy group, n-hexyloxy group, n-hexyloxy group, N-nonyloxy group, and n-decyloxy group.
Ar1은 Z2로 치환되어 있어도 되는 탄소수 6∼20의 아릴기를 나타낸다. Ar 1 represents an aryl group having 6 to 20 carbon atoms which may be substituted with Z 2 .
탄소수 6∼20의 아릴기의 구체예로서는 페닐기, 1-나프틸기, 2-나프틸기, 1-안트릴기, 2-안트릴기, 9-안트릴기, 1-펜안트릴기, 2-펜안트릴기, 3-펜안트릴기, 4-펜안트릴기, 9-펜안트릴기 등을 들 수 있다. Specific examples of the aryl group having 6 to 20 carbon atoms include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-anthryl group, a 2-anthryl group, a 9-anthryl group, a 1-phenanthryl group, Group, a 3-phenanthryl group, a 4-phenanthryl group, and a 9-phenanthryl group.
n은 1∼3의 정수를 나타내지만, 바람직하게는 1이다. n represents an integer of 1 to 3, preferably 1.
X는 식 (2a) 또는 (2b)로 표시되는 2가의 유기기를 나타낸다. X represents a divalent organic group represented by the formula (2a) or (2b).
R9 및 R10은, 서로 독립하여, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 플루오로알킬기, Z2로 치환되어 있어도 되는 탄소수 6∼20의 아릴기를 나타내거나, R9와 R10이 결합하여, 탄소수 3∼21의 축환하고 있어도 되는 환식 탄화 수소기를 나타내고, R11 및 R12는, 서로 독립하여, 수소 원자 또는 불소 원자를 나타내고, R13∼R20은, 서로 독립하여, 수소 원자, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 플루오로알킬기, 또는 Z3을 나타낸다. R 9 and R 10 independently of each other represent an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, or an aryl group having 6 to 20 carbon atoms which may be substituted with Z 2 , or R 9 and R 10 , R 11 and R 12 independently represent a hydrogen atom or a fluorine atom and R 13 to R 20 independently represent a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, , An alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, or Z 3 .
탄소수 1∼20의 알킬기, 탄소수 6∼20의 아릴기로서는 상기와 동일한 것을 들 수 있다. Examples of the alkyl group having 1 to 20 carbon atoms and the aryl group having 6 to 20 carbon atoms include the same groups as described above.
탄소수 1∼20의 플루오로알킬기의 구체예로서는 직쇄상, 분기쇄상, 환상의 어떤 것이어도 되고, 예를 들면, 트라이플루오로메틸기, 펜타플루오로에틸기, 2,2,2-트라이플루오로에틸기, 헵타플루오로프로필기, 2,2,3,3,3-펜타플루오로프로필기, 2,2,3,3-테트라플루오로프로필기, 2,2,2-트라이플루오로-1-(트라이플루오로메틸)에틸기, 노나플루오로뷰틸기, 4,4,4-트라이플루오로뷰틸기, 운데카플루오로펜틸기, 2,2,3,3,4,4,5,5,5-노나플루오로펜틸기, 2,2,3,3,4,4,5,5-옥타플루오로펜틸기, 트라이데카플루오로헥실기, 2,2,3,3,4,4,5,5,6,6,6-운데카플루오로헥실기, 2,2,3,3,4,4,5,5,6,6-데카플루오로헥실기, 3,3,4,4,5,5,6,6,6-노나플루오로헥실기 등을 들 수 있다. Specific examples of the fluoroalkyl group having 1 to 20 carbon atoms may be any of linear, branched and cyclic, and examples thereof include a trifluoromethyl group, a pentafluoroethyl group, a 2,2,2-trifluoroethyl group, Fluoropropyl group, 2,2,3,3,3-pentafluoropropyl group, 2,2,3,3-tetrafluoropropyl group, 2,2,2-trifluoro-1- (trifluoro Nonyl fluoroethyl group, non-fluorobutyl group, 4,4,4-trifluorobutyl group, undecafluoropentyl group, 2,2,3,3,4,4,5,5,5-nonafluoro 2,2,3,3,4,4,5,5-octafluoropentyl group, tridecafluorohexyl group, 2,2,3,3,4,4,5,5,6 , 6,6-undecafluorohexyl group, 2,2,3,3,4,4,5,5,6,6-decafluorohexyl group, 3,3,4,4,5,5, 6,6-nonafluorohexyl group, and the like.
m은 1∼4의 정수를 나타내지만, 바람직하게는 1이다. m represents an integer of 1 to 4, but is preferably 1.
또한 R9와 R10이 결합하여 형성하는, 탄소수 3∼21의 축환하고 있어도 되는 환식 탄화 수소기로서는 하기 식으로 표시되는 것을 들 수 있지만, 이것들에 한정되는 것은 아니다. Examples of the cyclic hydrocarbon group having 3 to 21 carbon atoms which may be condensed and formed by combining R 9 and R 10 include those represented by the following formulas, but are not limited thereto.
(식 중, 「·」은 메틸렌쇄와의 결합 부위를 나타낸다.)(Wherein " · " represents a bonding site with a methylene chain).
Z1은 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 카복실산기, 또는 Z3으로 치환되어 있어도 되는, 탄소수 6∼20의 아릴기 혹은 탄소수 2∼20의 헤테로아릴기를 나타내고, Z2는 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 카복실산기, 또는 Z3으로 치환되어 있어도 되는, 탄소수 1∼20의 알킬기, 탄소수 2∼20의 알켄일기 혹은 탄소수 2∼20의 알킨일기를 나타내고, Z3은 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 또는 카복실산기를 나타낸다. Z 1 is a halogen atom, a group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, or an aryl group of 6 to 20 carbon atoms optionally substituted by Z 3 or a C2-nitro represents a heteroaryl group of ~20, Z 2 is a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, having 1 that may be substituted by Z 3 or An alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms; Z 3 represents a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, , Or a carboxylic acid group.
이들 할로젠 원자, 탄소수 1∼20의 알킬기, 탄소수 6∼20의 아릴기로서는 상기와 동일한 것을 들 수 있다. Examples of the halogen atom, the alkyl group having 1 to 20 carbon atoms, and the aryl group having 6 to 20 carbon atoms are the same as described above.
탄소수 2∼20의 헤테로아릴기의 구체예로서는 2-싸이엔일기, 3-싸이엔일기, 2-퓨란일기, 3-퓨란일기, 2-옥사졸일기, 4-옥사졸일기, 5-옥사졸일기, 3-아이소옥사졸일기, 4-아이소옥사졸일기, 5-아이소옥사졸일기, 2-싸이아졸일기, 4-싸이아졸일기, 5-싸이아졸일기, 3-아이소싸이아졸일기, 4-아이소싸이아졸일기, 5-아이소싸이아졸일기, 2-이미다졸일기, 4-이미다졸일기, 2-피리딜기, 3-피리딜기, 4-피리딜기 등을 들 수 있다. Specific examples of the heteroaryl group having 2 to 20 carbon atoms include a 2-thienyl group, a 3-thienyl group, a 2-furanyl group, a 3-furanyl group, a 2-oxazolyl group, Isothiazolyl group, 3-isothiazolyl group, 3-isothiazolyl group, 4-isooxazolyl group, 5-isothiazolyl group, A thiazolyl group, a thiazolyl group, a 5-isothiazolyl group, a 2-imidazolyl group, a 4-imidazolyl group, a 2-pyridyl group, a 3-pyridyl group and a 4-pyridyl group.
탄소수 2∼20의 알켄일기의 구체예로서는 에텐일기, n-1-프로펜일기, n-2-프로펜일기, 1-메틸에텐일기, n-1-뷰텐일기, n-2-뷰텐일기, n-3-뷰텐일기, 2-메틸-1-프로펜일기, 2-메틸-2-프로펜일기, 1-에틸에텐일기, 1-메틸-1-프로펜일기, 1-메틸-2-프로펜일기, n-1-펜텐일기, n-1-데센일기, n-1-에이코센일기 등을 들 수 있다. Specific examples of the alkenylene group having 2 to 20 carbon atoms include an ethynyl group, an n-1-propenylene group, an n-2-propenylene group, a 1-methylethenyl group, methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl- Propenylene group, n-1-pentenylene group, n-1-deceneyl group, n-1-eicosenyl group and the like.
탄소수 2∼20의 알킨일기의 구체예로서는 에틴일기, n-1-프로핀일기, n-2-프로핀일기, n-1-뷰틴일기, n-2-뷰틴일기, n-3-뷰틴일기, 1-메틸-2-프로핀일기, n-1-펜틴일기, n-2-펜틴일기, n-3-펜틴일기, n-4-펜틴일기, 1-메틸-n-뷰틴일기, 2-메틸-n-뷰틴일기, 3-메틸-n-뷰틴일기, 1,1-다이메틸-n-프로핀일기, n-1-헥신일기, n-1-데신일기, n-1-펜타데신일기, n-1-에이코신일기 등을 들 수 있다. Specific examples of the alkynyl group having 2 to 20 carbon atoms include ethynyl, n-1-propynyl, n-2-propynyl, n-1-butynyl, N-pentyl group, n-4-pentynyl group, 1-methyl-n-butynyl group, 2-methyl n-propynyl group, n-1-hexynyl group, n-1-decynyl group, n-1-pentadecynyl group, n-1-eicosynyl group and the like.
이것들 중에서도 R1∼R8로서는, 서로 독립하여, 수소 원자, 탄소수 1∼6의 알킬기, 탄소수 1∼6의 알콕시기가 바람직하고, 서로 독립하여, 수소 원자, 메틸기, 에틸기, 메톡시기가 보다 바람직하고, 모두 수소 원자가 더한층 바람직하다. Among them, R 1 to R 8 are preferably a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an alkoxy group having 1 to 6 carbon atoms, and are independently of each other preferably a hydrogen atom, a methyl group, an ethyl group or a methoxy group , All hydrogen atoms are further preferable.
Ar1로서는 Z2로 치환되어 있어도 되는 페닐기가 바람직하고, 비치환의 페닐기가 보다 바람직하다. As Ar 1, a phenyl group which may be substituted with Z 2 is preferable, and an unsubstituted phenyl group is more preferable.
R9 및 R10으로서는 탄소수 1∼6의 알킬기, 탄소수 1∼6의 플루오로알킬기, Z2로 치환되어 있어도 되는 탄소수 6∼18의 아릴기, R9와 R10이 결합한 하기 식으로 표시되는 환식 탄화 수소기가 바람직하고, 메틸기, R9와 R10이 결합한 하기 식으로 표시되는 환식 탄화 수소기가 보다 바람직하다. R 9 and R 10 are preferably an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 18 carbon atoms which may be substituted with Z 2 , a cyclic group represented by the following formula in which R 9 and R 10 are bonded A hydrocarbon group is preferable and a cyclic hydrocarbon group represented by the following formula in which a methyl group and R 9 and R 10 are bonded is more preferable.
R11 및 R12로서는 모두 수소 원자가 바람직하다. R 11 and R 12 are all preferably hydrogen atoms.
R13∼R20으로서는, 서로 독립하여, 수소 원자, 메틸기, 에틸기, 트라이플루오로메틸기, 할로젠 원자가 바람직하고, 모두 수소 원자가 보다 바람직하다. As R 13 to R 20 , a hydrogen atom, a methyl group, an ethyl group, a trifluoromethyl group, and a halogen atom are preferable, and hydrogen atoms are more preferable.
(식 중, 「·」은 메틸렌쇄와의 결합 부위를 나타낸다.)(Wherein " · " represents a bonding site with a methylene chain).
따라서, X로서는 식 (3a)∼(3h)로 표시되는 어느 하나의 2가의 유기기가 적합하다. Therefore, as X, any one of the divalent organic groups represented by the formulas (3a) to (3h) is suitable.
그중에서도, 식 (3a')∼(3h')으로 표시되는 어느 하나의 2가의 유기기인 경우가 더욱 바람직하다. Among them, the divalent organic group represented by any one of formulas (3a ') to (3h') is more preferable.
또한, 상기 알킬기, 플루오로알킬기, 알콕시기, 알켄일기 및 알킨일기의 탄소수는 바람직하게는 10 이하이며, 보다 바람직하게는 6 이하이며, 더한층 바람직하게는 4 이하이다. The number of carbon atoms of the alkyl group, fluoroalkyl group, alkoxy group, alkenyl group and alkynyl group is preferably 10 or less, more preferably 6 or less, still more preferably 4 or less.
또한 아릴기 및 헤테로아릴기의 탄소수는 바람직하게는 14 이하이고, 보다 바람직하게는 10 이하이며, 더한층 바람직하게는 6 이하이다. The number of carbon atoms of the aryl group and the heteroaryl group is preferably 14 or less, more preferably 10 or less, still more preferably 6 or less.
상기 아릴아민 유도체의 분자량은 통상 300∼5,000이지만, 용해성을 높이는 관점에서, 바람직하게는 4,000 이하이고, 보다 바람직하게는 3,000 이하이며, 더한층 바람직하게는 2,000 이하이다. The molecular weight of the arylamine derivative is usually 300 to 5,000, but is preferably 4,000 or less, more preferably 3,000 or less, still more preferably 2,000 or less, from the viewpoint of improving solubility.
본 발명의 식 (1)로 표시되는 아릴아민 유도체는 바이페닐 화합물과, 다이아민 화합물을 촉매 존재하에서 반응시켜 제조할 수 있지만, 이 제조법에 한정되는 것은 아니다. The arylamine derivative represented by the formula (1) of the present invention can be produced by reacting a biphenyl compound and a diamine compound in the presence of a catalyst, but the production method is not limited thereto.
예를 들면, X로서 식 (2a)로 표시되는 2가의 유기기를 갖는 아릴아민 유도체 (6)는 식 (4)로 표시되는 바이페닐 화합물과, 식 (5)로 표시되는 다이아민 화합물을 촉매 존재하에서 반응시켜 얻을 수 있다. For example, the arylamine derivative (6) having a bivalent organic group represented by the formula (2a) as X is obtained by reacting the biphenyl compound represented by the formula (4) with the diamine compound represented by the formula (5) . ≪ / RTI >
(식 중, Z는 할로젠 원자 또는 유사 할로젠기를 나타내고, R1∼R10, R13∼R20, Ar1 및 n은 상기와 동일한 의미를 나타낸다.)(Wherein Z represents a halogen atom or a similar arylene group, and R 1 to R 10 , R 13 to R 20 , Ar 1 and n have the same meanings as defined above.)
또한 X로서 식 (2b)로 표시되는 2가의 유기기를 갖는 아릴아민 유도체 (8)은 식 (4)로 표시되는 바이페닐 화합물과, 식 (7)로 표시되는 다이아민 화합물을 촉매 존재하에서 반응시켜 얻을 수 있다. The arylamine derivative (8) having a bivalent organic group represented by the formula (2b) as X is obtained by reacting the biphenyl compound represented by the formula (4) and the diamine compound represented by the formula (7) Can be obtained.
(식 중, Z는 할로젠 원자 또는 유사 할로젠기를 나타내고, R1∼R8, R11∼R20, Ar1, m 및 n은 상기와 동일한 의미를 나타낸다.)(Wherein Z represents a halogen atom or a similar halogen group, and R 1 to R 8 , R 11 to R 20 , Ar 1 , m and n have the same meanings as defined above.)
할로젠 원자로서는 상기와 동일한 것을 들 수 있다. Examples of the halogen atom include the same ones as described above.
유사 할로젠기로서는 메테인설폰일옥시기, 트라이플루오로메테인설폰일옥시기, 노나플루오로뷰테인설폰일옥시기 등의 (플루오로)알킬설폰일옥시기; 벤젠설폰일옥시기, 톨루엔설폰일옥시기 등의 방향족 설폰일옥시기 등을 들 수 있다. Examples of the similar benzene group include a (fluoro) alkylsulfonyloxy group such as methanesulfonyloxy group, trifluoromethanesulfonyloxy group and nonafluorobutainesulfonyloxy group; And aromatic sulfonyloxy groups such as benzenesulfonyloxy group and toluenesulfonyloxy group.
식 (5)로 표시되는 다이아민 화합물과, 식 (4)로 표시되는 바이페닐 화합물의 장입비는, 다이아민 화합물의 전체 NH기의 물질량에 대하여, 바이페닐 화합물을 당량 이상으로 할 수 있지만, 1∼1.2당량 정도가 적합하다. The charging ratio of the diamine compound represented by the formula (5) and the biphenyl compound represented by the formula (4) can be equal to or more than the equivalent amount of the biphenyl compound to the total NH group content of the diamine compound, About 1 to 1.2 equivalents are suitable.
상기 반응에 사용되는 촉매로서는, 예를 들면, 염화 구리, 브로민화 구리, 아이오딘화 구리 등의 구리 촉매; Pd(PPh3)4(테트라키스(트라이페닐포스핀)팔라듐), Pd(PPh3)2Cl2(비스(트라이페닐포스핀)다이클로로팔라듐), Pd(dba)2(비스(벤질리덴아세톤)팔라듐), Pd2(dba)3(트리스(벤질리덴아세톤)다이팔라듐), Pd(P-t-Bu3)2(비스(트라이(t-뷰틸)포스핀)팔라듐) 등의 팔라듐 촉매 등을 들 수 있다. 이들 촉매는 단독으로 사용해도 되고, 2종 이상 조합하여 사용해도 된다. 또한 이들 촉매는 공지의 적절한 배위자와 함께 사용해도 된다. Examples of the catalyst used in the reaction include copper catalysts such as copper chloride, copper bromide and copper iodide; Pd (PPh 3) 4 (tetrakis (triphenylphosphine) palladium), Pd (PPh 3) 2 Cl 2 ( bis (triphenylphosphine) dichloropalladium), Pd (dba) 2 (bis (dibenzylidene acetone Palladium catalysts such as palladium (Pd), Pd 2 (dba) 3 (tris (benzylideneacetone) dipalladium), Pd (Pt- Bu 3 ) 2 . These catalysts may be used alone or in combination of two or more. These catalysts may also be used together with any known ligands.
촉매의 사용량은, 사용하는 다이아민 화합물을 1mol로 한 경우에, 0.001∼0.5mol 정도로 할 수 있지만, 0.01∼0.1mol 정도가 적합하다. The amount of the catalyst to be used can be about 0.001 to 0.5 mol, preferably about 0.01 to 0.1 mol, in the case of using 1 mol of the diamine compound to be used.
또한 배위자를 사용하는 경우, 그 사용량은 사용하는 금속 착체에 대하여 0.1∼5당량으로 할 수 있지만, 1∼2당량이 적합하다. When a ligand is used, its amount to be used may be 0.1 to 5 equivalents based on the metal complex used, but 1 to 2 equivalents are suitable.
상기 반응은 용매 중에서 행해도 된다. 용매를 사용하는 경우, 그 종류는 반응에 악영향을 끼치지 않는 것이면 특별히 제한은 없다. 구체예로서는 지방족 탄화 수소류(펜테인, n-헥세인, n-옥테인, n-데케인, 데칼린 등), 할로젠화 지방족 탄화 수소류(클로로폼, 다이클로로메테인, 다이클로로에테인, 사염화탄소 등), 방향족 탄화 수소류(벤젠, 나이트로벤젠, 톨루엔, o-자일렌, m-자일렌, p-자일렌, 메시틸렌 등), 할로젠화 방향족 탄화 수소류(클로로벤젠, 브로모벤젠, o-다이클로로벤젠, m-다이클로로벤젠, p-다이클로로벤젠 등), 에터류(다이에틸에터, 다이아이소프로필에터, t-뷰틸메틸에터, 테트라하이드로퓨란, 다이옥세인, 1,2-다이메톡시에테인, 1,2-다이에톡시에테인 등), 케톤류(아세톤, 메틸에틸케톤, 메틸아이소뷰틸케톤, 다이-n-뷰틸케톤, 사이클로헥산온 등), 아마이드류(N,N-다이메틸폼아마이드, N,N-다이메틸아세트아마이드 등), 락탐 및 락톤류(N-메틸피롤리돈, γ-뷰티로락톤 등), 요소류(N,N-다이메틸이미다졸리딘온, 테트라메틸유레아 등), 설폭사이드류(다이메틸설폭사이드, 설포레인 등), 나이트릴류(아세토나이트릴, 프로피오나이트릴, 뷰티로나이트릴 등) 등을 들 수 있고, 이들 용매는 단독으로 사용해도, 2종 이상 혼합하여 사용해도 된다. The reaction may be carried out in a solvent. When a solvent is used, the kind thereof is not particularly limited as long as it does not adversely affect the reaction. Specific examples thereof include aliphatic hydrocarbons (pentane, n-hexane, n-octane, n-decane, decalin and the like), halogenated aliphatic hydrocarbon (such as chloroform, dichloromethane, dichloroethane, Etc.), aromatic hydrocarbons (benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene and mesitylene), halogenated aromatic hydrocarbons (chlorobenzene, bromobenzene dichlorobenzene, p-dichlorobenzene), ether (diethylether, diisopropylether, t-butylmethylether, tetrahydrofuran, dioxane, 1 Dimethoxyethane, 1,2-diethoxyethane and the like), ketones (acetone, methyl ethyl ketone, methyl isobutyl ketone, di-n-butyl ketone and cyclohexanone), amides (N, Dimethylformamide, N, N-dimethylacetamide, etc.), lactams and lactones (N-methylpyrrolidone,? -Butyrolactone, etc.) (N, N-dimethylimidazolidinone, tetramethylurea and the like), sulfoxides (dimethylsulfoxide, sulfolane, etc.), nitriles (such as acetonitrile, propionitrile, ). These solvents may be used alone or in combination of two or more.
반응온도는 사용하는 용매의 융점에서 비점까지의 범위에서 적당히 설정하면 되는데, 특히, 0∼200℃ 정도가 바람직하고, 20∼150℃가 보다 바람직하다. The reaction temperature may be appropriately set in the range from the melting point to the boiling point of the solvent to be used, particularly preferably from 0 to 200 캜, more preferably from 20 to 150 캜.
반응 종료 후는, 상법에 따라 후처리를 하여, 목적으로 하는 아릴아민 유도체를 얻을 수 있다. After completion of the reaction, the desired arylamine derivative can be obtained by post-treatment according to the conventional method.
또한, 식 (4)로 표시되는 바이페닐 화합물은 Ar1NH2(Ar1은 상기와 동일한 의미를 나타낸다), 4,4'-다이할로젠화 또는 다이 유사 할로젠화 바이페닐 화합물을 상기와 동일한 촉매하에서 반응시켜 얻을 수 있다. The biphenyl compound represented by the formula (4) can be produced by reacting a biphenyl compound represented by Ar 1 NH 2 (wherein Ar 1 has the same meaning as described above), a 4,4'-dihalogenated or di- Under the same catalyst.
식 (1)로 표시되는 아릴아민 유도체의 구체예로서는 하기 식으로 표시되는 것을 들 수 있지만, 이것들에 한정되는 것은 아니다. 또한, 식 중, Y1 및 Y2는 각각 이하에 나타내는 1가의 유기기를 나타낸다. Specific examples of the arylamine derivative represented by the formula (1) include those represented by the following formulas, but are not limited thereto. In the formulas, Y 1 and Y 2 each represent a monovalent organic group shown below.
본 발명의 전하 수송성 바니시는 식 (1)로 표시되는 아릴아민 유도체로 이루어지는 전하 수송성 물질과, 유기 용매를 포함하는 것이지만, 얻어지는 박막의 용도에 따라, 그 전하 수송능의 향상 등을 목적으로 하여 도판트 물질을 포함하고 있어도 된다. The charge-transporting varnish of the present invention contains a charge-transporting material comprising an arylamine derivative represented by the formula (1) and an organic solvent. Depending on the purpose of the resulting thin film, the charge- Or may contain a substance.
도판트 물질로서는 바니시에 사용하는 적어도 1종의 용매에 용해되는 것이면 특별히 한정되지 않으며, 무기계의 도판트 물질, 유기계의 도판트 물질의 어느 것이나 사용할 수 있다. The dopant material is not particularly limited as long as it is soluble in at least one solvent used for the varnish, and both an inorganic dopant material and an organic dopant material can be used.
무기계의 도판트 물질로서는 염화 수소, 황산, 질산, 인산 등의 무기산; 염화 알루미늄(III)(AlCl3), 사염화 타이타늄(IV)(TiCl4), 삼브로민화 붕소(BBr3), 삼불화 붕소에터 착물(BF3·OEt2), 염화 철(III)(FeCl3), 염화 구리(II)(CuCl2), 오염화 안티모니(V)(SbCl5), 오불화 안티모니(V)(SbF5), 오불화 비소(V)(AsF5), 오불화 인(PF5), 트리스(4-브로모페닐)알루미늄헥사클로로안티모네이트(TBPAH) 등의 금속 할로젠화물; Cl2, Br2, I2, ICl, ICl3, IBr, IF4 등의 할로젠; 인몰리브데넘산, 인텅스텐산 등의 헤테로폴리산 등을 들 수 있다. Examples of the inorganic dopant substance include inorganic acids such as hydrogen chloride, sulfuric acid, nitric acid, and phosphoric acid; Aluminum chloride (III) (AlCl 3 ), titanium tetrachloride (TiCl 4 ), boron tribromide (BBr 3 ), boron trifluoride ether complex (BF 3 OEt 2 ) 3 ), copper (II) chloride (CuCl 2 ), antimony antimony (V) (SbCl 5 ), antimony pentoxide (V) (SbF 5 ), arsenic pentafluoride (AsF 5 ) Metal halides such as phosphorus (PF 5 ) and tris (4-bromophenyl) aluminum hexachloroantimonate (TBPAH); Cl 2 , Br 2 , I 2 , ICI, ICI 3 , IBr, IF 4 ; And heteropoly acids such as iminolibdic acid and phosphoric acid tungstic acid.
유기계의 도판트 물질로서는 벤젠설폰산, 토실산, p-스타이렌설폰산, 2-나프탈렌설폰산, 4-하이드록시벤젠설폰산, 5-설포살리실산, p-도데실벤젠설폰산, 다이헥실벤젠설폰산, 2,5-다이헥실벤젠설폰산, 다이뷰틸나프탈렌설폰산, 6,7-다이뷰틸-2-나프탈렌설폰산, 도데실나프탈렌설폰산, 3-도데실-2-나프탈렌설폰산, 헥실나프탈렌설폰산, 4-헥실-1-나프탈렌설폰산, 옥틸나프탈렌설폰산, 2-옥틸-1-나프탈렌설폰산, 헥실나프탈렌설폰산, 7-헥실-1-나프탈렌설폰산, 6-헥실-2-나프탈렌설폰산, 다이노닐나프탈렌설폰산, 2,7-다이노닐-4-나프탈렌설폰산, 다이노닐나프탈렌다이설폰산, 2,7-다이노닐-4,5-나프탈렌다이설폰산, 국제공개 제2005/000832호 기재의 1,4-벤조다이옥세인다이설폰산 화합물, 국제공개 제2006/025342호 기재의 아릴설폰산 화합물, 국제공개 제2009/096352호 기재의 아릴설폰산 화합물, 폴리스타이렌설폰산 등의 아릴설폰 화합물; 10-캠퍼설폰산 등의 비(非)아릴설폰 화합물; 7,7,8,8-테트라사이아노퀴노다이메테인(TCNQ), 2,3-다이클로로-5,6-다이사이아노-1,4-벤조퀴논(DDQ) 등의 유기 산화제를 들 수 있다. Organic dopants include benzenesulfonic acid, tosylic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5-sulfosalicylic acid, p-dodecylbenzenesulfonic acid, Naphthalene sulfonic acid, dodecyl naphthalene sulfonic acid, 6,7-dibutyl-2-naphthalene sulfonic acid, dodecyl naphthalene sulfonic acid, 3-dodecyl-2-naphthalene sulfonic acid, hexyl naphthalene Hexyl-1-naphthalenesulfonic acid, 6-hexyl-2-naphthalenesulfonic acid, 2-octyl-1-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, Sulfonic acid, dynonylnaphthalenesulfonic acid, 2,7-dynonyl-4-naphthalenesulfonic acid, dynonylnaphthalenedisulfonic acid, 2,7-dynonyl-4,5-naphthalenedisulfonic acid, The 1,4-benzodioxane disulfonic acid compound described in the specification of International Publication No. 2006-025342, the arylsulfonic acid compound described in WO 2006/025342, International Publication No. 2009/096352 Aryl sulfone compounds such as aryl-sulfonic acid compounds, polystyrene sulfonic acid; Non-aryl sulfone compounds such as 10-camphorsulfonic acid; Organic oxidizing agents such as 7,7,8,8-tetracyanoquinodimethane (TCNQ) and 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) have.
이들 무기계 및 유기계의 도판트 물질은 1종류 단독으로 사용해도 되고, 2종류 이상 조합하여 사용해도 된다. These inorganic and organic dopant materials may be used singly or in combination of two or more.
이들 도판트 물질 중에서도 헤테로폴리산이 적합하고, 도판트 물질로서 헤테로폴리산을 사용함으로써, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)로 대표되는 투명 전극으로부터의 고정공 수용능뿐만 아니라, 알루미늄으로 대표되는 금속 양극으로부터의 고정공 수용능을 나타내는 전하 수송성이 우수한 박막을 얻을 수 있다. Among these dopant materials, heteropolyacids are suitable, and heteropoly acids are used as the dopant materials. In addition to the fixation hole capacity represented by indium tin oxide (ITO) and indium zinc oxide (IZO) from transparent electrodes, It is possible to obtain a thin film having excellent charge transportability and exhibiting fixability to the metal anode.
헤테로폴리산이란 대표적으로 식 (B1)로 표시되는 Keggin형 혹은 식 (B2)로 표시되는 Dawson형의 화학 구조로 표시되는, 헤테로 원자가 분자의 중심에 위치하는 구조를 갖고, 바나듐(V), 몰리브데넘(Mo), 텅스텐(W) 등의 산소산인 아이소폴리산과, 이종 원소의 산소산이 축합하여 이루어지는 폴리산이다. 이러한 이종 원소의 산소산으로서는 주로 규소(Si), 인(P), 비소(As)의 산소산을 들 수 있다. The heteropolyacid typically has a Keggin type represented by the formula (B1) or a Dawson type chemical structure represented by the formula (B2), wherein the heteroatom is located at the center of the molecule and the vanadium (V), molybdenum (Mo), and tungsten (W), and an oxygen acid of a different element. Oxygen acids such as silicon (Si), phosphorus (P), and arsenic (As) can be cited as such oxygenates of these different kinds of elements.
헤테로폴리산의 구체예로서는 인몰리브데넘산, 규몰리브데넘산, 인텅스텐산, 규텅스텐산, 인텅스토몰리브데넘산 등을 들 수 있고, 이것들은 단독으로 사용해도 되고, 2종 이상 조합하여 사용해도 된다. 또한, 본 발명에서 사용하는 헤테로폴리산은 시판품으로서 입수 가능하며, 또한 공지의 방법에 의해 합성할 수도 있다. Specific examples of the heteropoly acid include iminolibdodic acid, silicolibdodic acid, tungstic acid, tungstic acid, and tinstomolybdoduric acid, and these may be used singly or in combination of two or more kinds . The heteropoly acid used in the present invention is available as a commercial product, and may be synthesized by a known method.
특히, 도판트 물질이 1종류의 헤테로폴리산 단독으로 이루어지는 경우, 그 1종류의 헤테로폴리산은 인텅스텐산 또는 인몰리브데넘산이 바람직하고, 인텅스텐산이 최적이다. 또한 도판트 물질이 2종류 이상의 헤테로폴리산으로 이루어지는 경우, 그 2종류 이상의 헤테로폴리산의 하나는 인텅스텐산 또는 인몰리브데넘산이 바람직하고, 인텅스텐산이 보다 바람직하다. In particular, when the dopant material is composed of one kind of heteropoly acid alone, the one kind of heteropoly acid is preferably tungstic acid or phospholipidic acid, and tungstic acid is the most preferable. When the dopant material is composed of two or more kinds of heteropoly acids, one of the two or more kinds of heteropoly acids is preferably tungstic acid or phospholipidic acid, and tungstic acid is more preferable.
또한, 헤테로폴리산은, 원소 분석 등의 정량 분석에 있어서, 일반식으로 표시되는 구조로부터 원소의 수가 많은 것, 또는 적은 것이어도, 그것이 시판품으로서 입수한 것, 또는, 공지의 합성 방법에 따라 적절하게 합성한 것인 한, 본 발명에서 사용할 수 있다. In the quantitative analysis such as elemental analysis, the heteropoly acid may be either a product having a large number of elements or a small number of elements from the structure represented by a general formula, a product obtained as a commercial product thereof, It can be used in the present invention.
즉, 예를 들면, 일반적으로는 인텅스텐산은 화학식 H3(PW12O40)·nH2O로, 인몰리브데넘산은 화학식 H3(PMo12O40)·nH2O로 각각 표시되지만, 정량 분석에 있어서, 이 식 중의 P(인), O(산소) 또는 W(텅스텐) 혹은 Mo(몰리브데넘)의 수가 많은 것, 또는 적은 것이어도, 그것이 시판품으로서 입수한 것, 또는, 공지의 합성 방법에 따라 적절하게 합성한 것인 한, 본 발명에서 사용할 수 있다. 이 경우, 본 발명에 규정되는 헤테로폴리산의 질량이란 합성물이나 시판품 중에서의 순수한 인텅스텐산의 질량(인텅스텐산 함량)이 아니고, 시판품으로서 입수 가능한 형태 및 공지의 합성법으로 단리 가능한 형태에 있어서, 수화수나 그 밖의 불순물 등을 포함한 상태에서의 전체 질량을 의미한다. That is, for example, generally is a tungsten acid formula H 3 (PW 12 O 40) · a nH 2 O, mold ribs deneom acid, but each of the formula H 3 (PMo 12 O 40) · nH 2 O, quantitative In the analysis, even if the number of P (phosphorus), O (oxygen) or W (tungsten) or Mo (molybdenum) in the formula is large or small, it may be a commercially available product, Can be used in the present invention as long as they are synthesized appropriately according to the method. In this case, the mass of the heteropoly acid specified in the present invention is not a mass of the pure tungstic acid (synthetic tungstic acid content) in a composite or a commercial product, but is in a form obtainable on the market and in a form that can be isolated by a known synthetic method, And other impurities and the like.
또한 도판트 물질로서 아릴설폰산 화합물도 적합하게 사용할 수 있다. 특히, 식 (7) 또는 (8)로 표시되는 아릴설폰산 화합물이 바람직하다. An arylsulfonic acid compound may also be suitably used as a dopant material. In particular, the arylsulfonic acid compound represented by the formula (7) or (8) is preferable.
A1은 O 또는 S를 나타내는데, O가 바람직하다. A 1 represents O or S, with O being preferred.
A2는 나프탈렌환 또는 안트라센환을 나타내지만, 나프탈렌환이 바람직하다.A 2 represents a naphthalene ring or an anthracene ring, but a naphthalene ring is preferable.
A3은 2∼4가의 퍼플루오로바이페닐기를 나타내고, p는 A1과 A3의 결합수를 나타내고, 2≤p≤4를 충족시키는 정수이지만, A3이 2가의 퍼플루오로바이페닐기이며, 또한, p가 2인 것이 바람직하다. A 3 represents a perfluorobiphenyl group having 2 to 4 valences, p denotes an integer number of bonds between A 1 and A 3 and is an integer satisfying 2? P? 4 , wherein A 3 is a divalent perfluorobiphenyl group , And p is preferably 2.
q는 A2에 결합하는 설폰산기 수를 나타내고, 1≤q≤4를 충족시키는 정수이지만, 2가 최적이다. q represents a sulfonic acid group bonded to A 2 and is an integer satisfying 1? q? 4 , but 2 is optimal.
A4∼A8은, 서로 독립하여, 수소 원자, 할로젠 원자, 사이아노기, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 할로젠화 알킬기, 또는 탄소수 2∼20의 할로젠화 알켄일기를 나타내지만, A4∼A8 중 적어도 3개는 할로젠 원자이다. A 4 to A 8 independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms, or a halogenated alkenyl group having 2 to 20 carbon atoms , But at least three of A 4 to A 8 are halogen atoms.
탄소수 1∼20의 할로젠화 알킬기로서는 트라이플루오로메틸기, 2,2,2-트라이플루오로에틸기, 1,1,2,2,2-펜타플루오로에틸기, 3,3,3-트라이플루오로프로필기, 2,2,3,3,3-펜타플루오로프로필기, 1,1,2,2,3,3,3-헵타플루오로프로필기, 4,4,4-트라이플루오로뷰틸기, 3,3,4,4,4-펜타플루오로뷰틸기, 2,2,3,3,4,4,4-헵타플루오로뷰틸기, 1,1,2,2,3,3,4,4,4-노나플루오로뷰틸기 등을 들 수 있다. Examples of the halogenated alkyl group having 1 to 20 carbon atoms include a trifluoromethyl group, a 2,2,2-trifluoroethyl group, a 1,1,2,2,2-pentafluoroethyl group, a 3,3,3-trifluoro- Propyl group, 2,2,3,3,3-pentafluoropropyl group, 1,1,2,2,3,3,3-heptafluoropropyl group, 4,4,4-trifluorobutyl group , 3,3,4,4,4-pentafluorobutyl group, 2,2,3,3,4,4,4-heptafluorobutyl group, 1,1,2,2,3,3,4 , 4,4-nonafluorobutyl group, and the like.
탄소수 2∼20의 할로젠화 알켄일기로서는 퍼플루오로바이닐기, 퍼플루오로프로펜일기(알릴기), 퍼플루오로뷰텐일기 등을 들 수 있다. Examples of the halogenated alkenylene group having 2 to 20 carbon atoms include a perfluorovinyl group, a perfluoropropenyl group (allyl group), and a perfluorobutenyl group.
그 외에, 할로젠 원자, 탄소수 1∼20의 알킬기의 예로서는 상기와 동일한 것을 들 수 있지만, 할로젠 원자로서는 불소 원자가 바람직하다. In addition, examples of the halogen atom and the alkyl group having 1 to 20 carbon atoms are the same as those described above, but a halogen atom is preferably a fluorine atom.
이것들 중에서도, A4∼A8은 수소 원자, 할로젠 원자, 사이아노기, 탄소수 1∼10의 알킬기, 탄소수 1∼10의 할로젠화 알킬기, 또는 탄소수 2∼10의 할로젠화 알켄일기이며, 또한, A4∼A8 중 적어도 3개는 불소 원자인 것이 바람직하고, 수소 원자, 불소 원자, 사이아노기, 탄소수 1∼5의 알킬기, 탄소수 1∼5의 불화 알킬기, 또는 탄소수 2∼5의 불화 알켄일기이며, 또한, A4∼A8 중 적어도 3개는 불소 원자인 것이 보다 바람직하고, 수소 원자, 불소 원자, 사이아노기, 탄소수 1∼5의 퍼플루오로알킬기, 또는 탄소수 1∼5의 퍼플루오로알켄일기이며, 또한, A4, A5 및 A8이 불소 원자인 것이 더한층 바람직하다. Of these, A 4 to A 8 are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, or a halogenated alkenylene group having 2 to 10 carbon atoms, At least three of A 4 to A 8 are preferably a fluorine atom and are preferably a hydrogen atom, a fluorine atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, an alkyl fluoride group having 1 to 5 carbon atoms, More preferably a fluorine atom, a fluorine atom, a cyano group, a perfluoroalkyl group having 1 to 5 carbon atoms, or a perfluoroalkyl group having 1 to 5 carbon atoms, and more preferably at least three of A 4 to A 8 are fluorine atoms, Perfluoroalkylene group, and further preferably A 4 , A 5 and A 8 are fluorine atoms.
또한, 퍼플루오로알킬기란 알킬기의 수소 원자 모두가 불소 원자에 치환된 기이며, 퍼플루오로알켄일기란 알켄일기의 수소 원자 모두가 불소 원자에 치환된 기이다. The perfluoroalkyl group is a group in which all the hydrogen atoms of the alkyl group are substituted with fluorine atoms, and the perfluoroalkylene group is a group in which all the hydrogen atoms of the alkenyl group are substituted with fluorine atoms.
r은 나프탈렌환에 결합하는 설폰산기 수를 나타내고, 1≤r≤4를 충족시키는 정수인데, 2∼4가 바람직하고, 2가 최적이다. r is an integer satisfying 1? r? 4, preferably 2 to 4, and most preferably 2, the number of sulfonic acid groups bonded to the naphthalene ring.
도판트 물질로서 사용하는 아릴설폰산 화합물의 분자량은 특별히 한정되는 것은 아니지만, 전하 수송성 물질과 함께 사용한 경우의 유기 용매에의 용해성을 고려하면, 바람직하게는 2000 이하, 보다 바람직하게는 1500 이하이다. The molecular weight of the arylsulfonic acid compound used as the dopant material is not particularly limited, but is preferably 2,000 or less, and more preferably 1,500 or less, in consideration of the solubility in an organic solvent when used together with the charge-transporting substance.
이하, 본 발명에 있어서, 도판트 물질로서 적합한 아릴설폰산 화합물의 구체예를 들지만, 이것들에 한정되는 것은 아니다. Specific examples of the arylsulfonic acid compound suitable as the dopant material in the present invention include, but are not limited to, the following.
본 발명의 전하 수송성 바니시에 도판트 물질을 포함시키는 경우, 도판트 물질의 사용량은 도판트 물질의 종류, 원하는 전하 수송성의 정도 등을 고려하여 적당히 결정되기 때문에, 일률적으로는 규정할 수 없지만, 일반적으로, 질량비로, 전하 수송성 물질 1에 대하여, 0.01∼50의 범위 내가 되지만, 얻어지는 박막의 전하 수송성을 향상시키는 관점에서, 바람직하게는 0.1∼20, 보다 바람직하게는 0.2∼10의 범위 내가 된다. When the dopant material is included in the charge transporting varnish of the present invention, the amount of the dopant material to be used is appropriately determined in consideration of the kind of the dopant material, the degree of desired charge transportability, and the like. Of the charge transport material 1 in terms of the mass ratio, but it is preferably in the range of 0.1 to 20, more preferably 0.2 to 10, from the viewpoint of improving the charge transportability of the resulting thin film.
전하 수송성 바니시를 조제할 때에 사용되는 유기 용매로서는 전하 수송성 물질 및 필요에 따라 사용되는 도판트 물질을 양호하게 용해할 수 있는 고용해성 용매를 사용할 수 있다. As the organic solvent used for preparing the charge transporting varnish, a solvent capable of dissolving a charge-transporting material and a dopant material to be used as needed can be used.
이러한 고용해성 용매로서는, 예를 들면, 사이클로헥산온, N,N-다이메틸폼아마이드, N,N-다이메틸아세트아마이드, N-메틸피롤리돈, 1,3-다이메틸-2-이미다졸리딘온, 다이에틸렌글라이콜모노메틸에터 등의 유기 용매를 들 수 있지만, 이것들에 한정되는 것은 아니다. 이들 용매는 1종 단독으로, 또는 2종 이상 혼합하여 사용할 수 있고, 그 사용량은 바니시에 사용하는 용매 전체에 대하여 5∼100질량%로 할 수 있다. Examples of such a solubilizing solvent include cyclohexanone, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl- Diethylene glycol monomethyl ether, and the like, but are not limited thereto. These solvents may be used singly or in combination of two or more, and the amount thereof may be 5 to 100% by mass based on the total solvent used in the varnish.
또한, 전하 수송성 물질 및 도판트 물질은 모두 상기 용매에 완전히 용해되어 있거나, 균일하게 분산되어 있는 상태로 되어 있는 것이 바람직하고, 완전히 용해되어 있는 것이 보다 바람직하다. Further, both the charge-transporting substance and the dopant substance are preferably completely dissolved or uniformly dispersed in the solvent, and more preferably completely dissolved.
또한 본 발명에서는, 바니시에, 25℃에서 10∼200mPa·s, 특히 35∼150mPa·s의 점도를 갖고, 상압(대기압)에서 비점 50∼300℃, 특히 150∼250℃의 고점도 유기 용매를 적어도 1종류 함유시킴으로써 바니시의 점도의 조정이 용이하게 되고, 그 결과, 평탄성이 높은 박막을 재현성 좋게 공급하고, 사용하는 도포 방법에 적합한 바니시 조제가 가능하게 된다. In the present invention, the varnish preferably contains at least a highly viscous organic solvent having a viscosity of 10 to 200 mPa · s, particularly 35 to 150 mPa · s at 25 ° C. and a boiling point of 50 to 300 ° C., particularly 150 to 250 ° C., The inclusion of one kind makes it easy to adjust the viscosity of the varnish. As a result, it is possible to prepare a varnish suitable for a coating method in which thin films with high flatness are supplied with good reproducibility.
고점도 유기 용매로서는, 예를 들면, 사이클로헥산올, 에틸렌글라이콜, 에틸렌글라이콜다이글라이시딜에터, 1,3-옥틸렌글라이콜, 다이에틸렌글라이콜, 다이프로필렌글라이콜, 트라이에틸렌글라이콜, 트라이프로필렌글라이콜, 1,3-뷰테인다이올, 2,3-뷰테인다이올, 1,4-뷰테인다이올, 프로필렌글라이콜, 헥실렌글라이콜 등을 들 수 있지만, 이것들에 한정되는 것은 아니다. 이들 용매는 단독으로 사용해도 되고, 2종 이상 혼합하여 사용해도 된다. Examples of the highly viscous organic solvent include organic solvents such as cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octyleneglycol, diethylene glycol, dipropylene glycol, Triethylene glycol, tripropylene glycol, 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol and the like But the present invention is not limited thereto. These solvents may be used alone or in combination of two or more.
본 발명의 바니시에 사용되는 용매 전체에 대한 고점도 유기 용매의 첨가 비율은 고체가 석출되지 않는 범위 내인 것이 바람직하고, 고체가 석출되지 않는 한에 있어서, 첨가 비율은 5∼90질량%가 바람직하다. The addition ratio of the highly viscous organic solvent to the entire solvent used in the varnish of the present invention is preferably within a range where no solid is precipitated, and the addition ratio is preferably 5 to 90% by mass so long as no solid is precipitated.
또한, 기판에 대한 젖음성의 향상, 용매의 표면장력의 조정, 극성의 조정, 비점의 조정 등의 목적으로, 그 밖의 용매를, 바니시에 사용하는 용매 전체에 대하여 1∼90질량%, 바람직하게는 1∼50질량%의 비율로 혼합할 수도 있다. Further, for the purpose of improving the wettability of the substrate, adjusting the surface tension of the solvent, adjusting the polarity, and adjusting the boiling point, other solvents may be used in an amount of 1 to 90% by mass, And may be mixed at a ratio of 1 to 50 mass%.
이러한 용매로서는, 예를 들면, 프로필렌글라이콜모노메틸에터, 에틸렌글라이콜모노뷰틸에터, 다이에틸렌글라이콜다이에틸에터, 다이에틸렌글라이콜다이메틸에터, 다이에틸렌글라이콜모노에틸에터아세테이트, 다이에틸렌글라이콜모노뷰틸에터아세테이트, 다이프로필렌글라이콜모노메틸에터, 프로필렌글라이콜모노메틸에터아세테이트, 다이에틸렌글라이콜모노에틸에터, 다이아세톤알코올, γ-뷰티로락톤, 에틸락테이트, n-헥실아세테이트 등을 들 수 있지만, 이것들에 한정되는 것은 아니다. 이들 용매는 1종 단독으로, 또는 2종 이상 혼합하여 사용할 수 있다. Examples of such a solvent include propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol Diethylene glycol monomethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone Alcohols,? -Butyrolactone, ethyl lactate, n-hexyl acetate, and the like, but are not limited thereto. These solvents may be used singly or in combination of two or more.
본 발명의 바니시의 점도는 제작하는 박막의 두께 등이나 고형분 농도에 따라 적당히 설정되는 것이지만, 통상, 25℃에서 1∼50mPa·s이다. The viscosity of the varnish of the present invention is suitably set in accordance with the thickness of the thin film to be produced or the solid content concentration, but is usually 1 to 50 mPa · s at 25 ° C.
또한 본 발명에서의 전하 수송성 바니시의 고형분 농도는 바니시의 점도 및 표면장력 등이나, 제작하는 박막의 두께 등을 감안하여 적당히 설정되는 것이지만, 통상, 0.1∼10.0질량% 정도이며, 바니시의 도포성을 향상시키는 것을 고려하면, 바람직하게는 0.5∼5.0질량% 정도, 보다 바람직하게는 1.0∼3.0질량% 정도이다. The solid concentration of the charge transporting varnish in the present invention is appropriately set in consideration of the viscosity and the surface tension of the varnish, the thickness of the thin film to be produced, and the like, but is usually about 0.1 to 10.0 mass% It is preferably about 0.5 to 5.0 mass%, and more preferably about 1.0 to 3.0 mass%.
이상에서 설명한 전하 수송성 바니시를 기재 상에 도포하고 소성함으로써, 기재 위에 전하 수송성 박막을 형성시킬 수 있다. The charge-transporting thin film can be formed on the substrate by applying the charge-transporting varnish described above to the substrate and firing it.
바니시의 도포 방법으로서는 특별히 한정되는 것은 아니고, 디핑법, 스핀 코팅법, 전사 인쇄법, 롤 코팅법, 브러시 코팅법, 잉크젯법, 스프레이법, 슬릿 코팅법 등을 들 수 있으며, 도포 방법에 따라 바니시의 점도 및 표면장력을 조절하는 것이 바람직하다. The application method of the varnish is not particularly limited, and examples thereof include a dipping method, a spin coating method, a transfer printing method, a roll coating method, a brush coating method, an ink jet method, a spraying method and a slit coating method. It is preferable to adjust the viscosity and the surface tension of the polymer.
소성 분위기로서는 특별히 한정되는 것은 아니지만, 대기 분위기가 바람직하다. The firing atmosphere is not particularly limited, but an atmosphere is preferable.
소성 온도는 얻어지는 박막의 용도, 얻어지는 박막에 부여하는 전하 수송성의 정도, 용매의 종류나 비점 등을 감안하여, 100∼260℃ 정도의 범위 내에서 적당히 설정되는 것이지만, 얻어지는 박막을 유기 EL 소자의 정공 주입층으로서 사용하는 경우, 140∼250℃ 정도가 바람직하고, 145∼240℃ 정도가 보다 바람직하다. The firing temperature is suitably set in the range of about 100 to 260 DEG C in consideration of the use of the thin film to be obtained, the degree of charge transportability given to the resulting thin film, the type and boiling point of the solvent, When used as an injection layer, it is preferably about 140 to 250 캜, and more preferably about 145 to 240 캜.
또한, 소성 시에, 보다 높은 균일 성막성을 발현시키거나, 기재 상에서 반응을 진행시키거나 할 목적으로, 2단계 이상의 온도 변화를 주어도 되고, 가열은, 예를 들면, 핫플레이트나 오븐 등, 적당한 기기를 사용하여 행하면 된다. Further, at the time of firing, a temperature change of two or more stages may be given for the purpose of developing a higher uniform film-forming property or promoting the reaction on a substrate. Heating may be carried out by, for example, You can do this using a device.
전하 수송성 박막의 막 두께는 특별히 한정되지 않지만, 유기 EL 소자 내에서 정공 주입층으로서 사용하는 경우, 5∼200nm가 바람직하다. 막 두께를 변화시키는 방법으로서는, 바니시 중의 고형분 농도를 변화시키거나, 도포시의 기판 상의 용액량을 변화시키거나 하는 등의 방법이 있다. Though the thickness of the charge transporting thin film is not particularly limited, it is preferably 5 to 200 nm when used as the hole injecting layer in the organic EL device. As a method of changing the film thickness, there is a method of changing the solid content concentration in the varnish or changing the amount of the solution on the substrate at the time of coating.
본 발명의 전하 수송성 바니시를 사용하여 유기 EL 소자를 제작하는 경우의 사용 재료나, 제작 방법으로서는 하기와 같은 것을 들 수 있지만, 이것들에 한정되는 것은 아니다. Materials and methods for producing an organic EL device using the charge transporting varnish of the present invention include, but are not limited to, the following materials.
사용하는 전극 기판은 세제, 알코올, 순수 등에 의한 액체 세정을 미리 행하여 정화해 두는 것이 바람직하고, 예를 들면, 양극 기판에서는 사용 직전에 UV 오존 처리, 산소-플라즈마 처리 등의 표면 처리를 행하는 것이 바람직하다. 단 양극 재료가 유기물을 주성분으로 하는 경우, 표면 처리를 행하지 않아도 된다. It is preferable that the electrode substrate to be used is cleaned by previously performing liquid cleaning with detergent, alcohol, pure water or the like. For example, in the case of the positive electrode substrate, it is preferable to perform surface treatment such as UV ozone treatment and oxygen- Do. However, in the case where the anode material is composed mainly of an organic material, the surface treatment need not be performed.
본 발명의 전하 수송성 바니시로부터 얻어지는 박막으로 이루어지는 정공 주입층을 갖는 유기 EL 소자의 제작 방법의 예는 이하와 같다. An example of a method for producing an organic EL device having a hole injection layer made of a thin film obtained from the charge transporting varnish of the present invention is as follows.
상기의 방법에 의해, 양극 기판 위에 본 발명의 전하 수송성 바니시를 도포하고 소성하여, 전극 위에 정공 수송층을 제작한다. 이것을 진공 증착 장치 내에 도입하고, 정공 수송층, 발광층, 전자 수송층, 전자 주입층/홀 블록층, 음극 금속을 차례로 증착하여 유기 EL 소자로 한다. 또한, 필요에 따라, 발광층과 정공 수송층 사이에 전자 블록층을 설치해도 된다. By the above method, the charge transporting varnish of the present invention is coated on the anode substrate and fired to prepare a hole transporting layer on the electrode. This is introduced into a vacuum deposition apparatus, and a hole transporting layer, a light emitting layer, an electron transporting layer, an electron injecting layer / hole blocking layer, and a cathode metal are sequentially deposited to obtain an organic EL device. If necessary, an electron blocking layer may be provided between the light emitting layer and the hole transporting layer.
양극 재료로서는 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)로 대표되는 투명 전극이나, 알루미늄으로 대표되는 금속이나 이것들의 합금 등으로 구성되는 금속 양극을 들 수 있고, 평탄화 처리를 행한 것이 바람직하다. 고전하 수송성을 갖는 폴리싸이오펜 유도체나 폴리아닐린 유도체를 사용할 수도 있다. As the cathode material, a transparent anode typified by indium tin oxide (ITO) or indium zinc oxide (IZO), a metal anode typified by aluminum, or a metal anode composed of an alloy thereof may be used. . A polythiophene derivative or a polyaniline derivative having high charge transportability may be used.
또한, 금속 양극을 구성하는 그 밖의 금속으로서는 스칸듐, 타이타늄, 바나듐, 크로뮴, 망가니즈, 철, 코발트, 니켈, 구리, 아연, 갈륨, 이트륨, 지르코늄, 니오븀, 몰리브데넘, 루테늄, 로듐, 팔라듐, 카드뮴, 인듐, 스칸듐, 란타넘, 세륨, 프라세오디뮴, 네오디뮴, 프로메튬, 사마륨, 유로퓸, 가돌리늄, 테르븀, 디스프로슘, 홀뮴, 에르븀, 툴륨, 이터븀, 하프늄, 탈륨, 텅스텐, 레늄, 오스뮴, 이리듐, 플래티넘, 금, 타이타늄, 납, 비스머스나 이것들의 합금 등을 들 수 있지만, 이것들에 한정되는 것은 아니다. Examples of other metals constituting the metal anode include scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, yttrium, zirconium, niobium, molybdenum, ruthenium, Cadmium, indium, scandium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, hafnium, thallium, tungsten, rhenium, osmium, Gold, titanium, lead, bismuth, and alloys thereof, but are not limited thereto.
정공 수송층을 형성하는 재료로서는 (트라이페닐아민)다이머 유도체, [(트라이페닐아민)다이머]스파이로다이머, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-벤지딘(α-NPD), N,N'-비스(나프탈렌-2-일)-N,N'-비스(페닐)-벤지딘, N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-벤지딘, N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-9,9-스파이로바이플루오렌, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-9,9-스파이로바이플루오렌, N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-9,9-다이메틸-플루오렌, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-9,9-다이메틸-플루오렌, N,N'-비스(3-메틸페닐)-N,N'-비스(페닐)-9,9-다이페닐-플루오렌, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-9,9-다이페닐-플루오렌, N,N'-비스(나프탈렌-1-일)-N,N'-비스(페닐)-2,2'-다이메틸벤지딘, 2,2',7,7'-테트라키스(N,N-다이페닐아미노)-9,9-스파이로바이플루오렌, 9,9-비스[4-(N,N-비스-바이페닐-4-일-아미노)페닐]-9H-플루오렌, 9,9-비스[4-(N,N-비스-나프탈렌-2-일-아미노)페닐]-9H-플루오렌, 9,9-비스[4-(N-나프탈렌-1-일-N-페닐아미노)-페닐]-9H-플루오렌, 2,2',7,7'-테트라키스[N-나프탈렌일(페닐)-아미노]-9,9-스파이로바이플루오렌, N,N'-비스(페난트렌-9-일)-N,N'-비스(페닐)-벤지딘, 2,2'-비스[N,N-비스(바이페닐-4-일)아미노]-9,9-스파이로바이플루오렌, 2,2'-비스(N,N-다이페닐아미노)-9,9-스파이로바이플루오렌, 다이-[4-(N,N-다이(p-톨릴)아미노)-페닐]사이클로헥세인, 2,2',7,7'-테트라(N,N-다이(p-톨릴))아미노-9,9-스파이로바이플루오렌, N,N,N',N'-테트라-나프탈렌-2-일-벤지딘, N,N,N',N'-테트라-(3-메틸페닐)-3,3'-다이메틸벤지딘, N,N'-다이(나프탈렌일)-N,N'-다이(나프탈렌-2-일)-벤지딘, N,N,N',N'-테트라(나프탈렌일)-벤지딘, N,N'-다이(나프탈렌-2-일)-N,N'-다이페닐벤지딘-1,4-다이아민, N1,N4-다이페닐-N1,N4-다이(m-톨릴)벤젠-1,4-다이아민, N2,N2,N6,N6-테트라페닐나프탈렌-2,6-다이아민, 트리스(4-(퀴놀린-8-일)페닐)아민, 2,2'-비스(3-(N,N-다이(p-톨릴)아미노)페닐)바이페닐, 4,4',4''-트리스[3-메틸페닐(페닐)아미노]트라이페닐아민(m-MTDATA), 4,4',4''-트리스[1-나프틸(페닐)아미노]트라이페닐아민(1-TNATA) 등의 트라이아릴아민류, 5,5''-비스-{4-[비스(4-메틸페닐)아미노]페닐}-2,2':5',2''-터싸이오펜(BMA-3T) 등의 올리고 싸이오펜류 등을 들 수 있다. (Triphenylamine) dimer derivative, [(triphenylamine) dimer] spiro dimer, and N, N'-bis (naphthalen-1-yl) -N, N'- -N, N'-bis (3-methylphenyl) -N, N'-bis (phenylnaphthyl) -Bis (phenyl) -benzidine, N, N'-bis (3-methylphenyl) -N, N'- -9,9-bis (phenyl) -9,9-spirobifluorene, N, N'-bis (3-methylphenyl) -N, N'- N, N'-bis (3-methylphenyl) -9,9-dimethyl-fluorene, N, N'-bis (naphthalen- (Phenyl) -9,9-diphenyl-fluorene, N, N'-bis (naphthalen-1-yl) -N, N'- N, N'-bis (phenyl) -2,2'-dimethylbenzidine, 2,2 ', 7,7'-tetra Kiss (N, N-diphenylamino) -9,9-spirobifluor Phenylen-9H-fluorene, 9,9-bis [4- (N, N-bis-naphthalene- Phenyl] -9H-fluorene, 2,2 ', 4'-bis [4- (N-naphthalen- N, N'-bis (phenanthrene-9-yl) -N, N'-tetrakis [N-naphthalenyl Bis (phenyl) -benzidine, 2,2'-bis [N, N-bis (biphenyl-4-yl) amino] -9,9- spirobifluorene, 2,2'-bis - diphenylamino) -9,9-spirobifluorene, di- [4- (N, N-di (p- tolyl) amino) -phenyl] cyclohexane, 2,2 ' N, N ', N'-tetra-naphthalen-2-yl-benzidine, and N, N'- N, N'-di (naphthalen-2-yl) -benzidine, N, N'-tetra- (3-methylphenyl) -3,3'-dimethylbenzidine, N, N ', N'-tetra (naphthalenyl) -benzidine, N, '- diphenyl-benzidine-1,4-diamine, N 1, N 4-diphenyl-1 -N, N 4 -di (m- tolyl) benzene-1,4-diamine, N 2, N 2, N 6, N 6 - tetraphenyl naphthalene-2,6-diamine, tris (4- (quinolin-8-yl) phenyl) amine, 2,2'-bis (3- (N, N- di (p- tolyl ) Amino) phenyl) biphenyl, 4,4 ', 4 "-tris [3-methylphenyl (phenyl) amino] triphenylamine (4-methylphenyl) amino] phenyl} -2,2 ': 5' -tri (phenyl) amino] triphenylamine (1-TNATA) , 2 " -terthiophene (BMA-3T), and the like.
발광층을 형성하는 재료로서는 트리스(8-퀴놀리놀레이트)알루미늄(III)(Alq3), 비스(8-퀴놀리놀레이트)아연(II)(Znq2), 비스(2-메틸-8-퀴놀리놀레이트)-4-(p-페닐페놀레이트)알루미늄(III)(BAlq), 4,4'-비스(2,2-다이페닐바이닐)바이페닐, 9,10-다이(나프탈렌-2-일)안트라센, 2-t-뷰틸-9,10-다이(나프탈렌-2-일)안트라센, 2,7-비스[9,9-다이(4-메틸페닐)-플루오렌-2-일]-9,9-다이(4-메틸페닐)플루오렌, 2-메틸-9,10-비스(나프탈렌-2-일)안트라센, 2-(9,9-스파이로바이플루오렌-2-일)-9,9-스파이로바이플루오렌, 2,7-비스(9,9-스파이로바이플루오렌-2-일)-9,9-스파이로바이플루오렌, 2-[9,9-다이(4-메틸페닐)-플루오렌-2-일]-9,9-다이(4-메틸페닐)플루오렌, 2,2'-다이피렌일-9,9-스파이로바이플루오렌, 1,3,5-트리스(피렌-1-일)벤젠, 9,9-비스[4-(피렌일)페닐]-9H-플루오렌, 2,2'-바이(9,10-다이페닐안트라센), 2,7-다이피렌일-9,9-스파이로바이플루오렌, 1,4-다이(피렌-1-일)벤젠, 1,3-다이(피렌-1-일)벤젠, 6,13-다이(바이페닐-4-일)펜타센, 3,9-다이(나프탈렌-2-일)페릴렌, 3,10-다이(나프탈렌-2-일)페릴렌, 트리스[4-(피렌일)-페닐]아민, 10,10'-다이(바이페닐-4-일)-9,9'-바이안트라센, N,N'-다이(나프탈렌-1-일)-N,N'-다이페닐-[1,1': 4',1'': 4'',1'''-쿼터페닐]-4,4'''-다이아민, 4,4'-다이[10-(나프탈렌-1-일)안트라센-9-일]바이페닐, 다이벤조{[f,f']-4,4',7,7'-테트라페닐}다이인데노[1,2,3-cd:1',2',3'-lm]페릴렌, 1-(7-(9,9'-바이안트라센-10-일)-9,9-다이메틸-9H-플루오렌-2-일)피렌, 1-(7-(9,9'-바이안트라센-10-일)-9,9-다이헥실-9H-플루오렌-2-일)피렌, 1,3-비스(카바졸-9-일)벤젠, 1,3,5-트리스(카바졸-9-일)벤젠, 4,4',4''-트리스(카바졸-9-일)트라이페닐아민, 4,4'-비스(카바졸-9-일)바이페닐, 4,4'-비스(카바졸-9-일)-2,2'-다이메틸바이페닐, 2,7-비스(카바졸-9-일)-9,9-다이메틸플루오렌, 2,2',7,7'-테트라키스(카바졸-9-일)-9,9-스파이로바이플루오렌, 2,7-비스(카바졸-9-일)-9,9-다이(p-톨릴)플루오렌, 9,9-비스[4-(카바졸-9-일)-페닐]플루오렌, 2,7-비스(카바졸-9-일)-9,9-스파이로바이플루오렌, 1,4-비스(트라이페닐실릴)벤젠, 1,3-비스(트라이페닐실릴)벤젠, 비스(4-N,N-다이에틸아미노-2-메틸페닐)-4-메틸페닐메테인, 2,7-비스(카바졸-9-일)-9,9-다이옥틸플루오렌, 4,4''-다이(트라이페닐실릴)-p-터페닐, 4,4'-다이(트라이페닐실릴)바이페닐, 9-(4-t-뷰틸페닐)-3,6-비스(트라이페닐실릴)-9H-카바졸, 9-(4-t-뷰틸페닐)-3,6-다이트리틸-9H-카바졸, 9-(4-t-뷰틸페닐)-3,6-비스(9-(4-메톡시페닐)-9H-플루오렌-9-일)-9H-카바졸, 2,6-비스(3-(9H-카바졸-9-일)페닐)피리딘, 트라이페닐(4-(9-페닐-9H-플루오렌-9-일)페닐)실레인, 9,9-다이메틸-N,N-다이페닐-7-(4-(1-페닐-1H-벤조[d]이미다졸-2-일)페닐)-9H-플루오렌-2-아민, 3,5-비스(3-(9H-카바졸-9-일)페닐)피리딘, 9,9-스파이로바이플루오렌-2-일-다이페닐-포스핀옥사이드, 9,9'-(5-(트라이페닐실릴)-1,3-페닐렌)비스(9H-카바졸), 3-(2,7-비스(다이페닐포스포릴)-9-페닐-9H-플루오렌-9-일)-9-페닐-9H-카바졸, 4,4,8,8,12,12-헥사(p-톨릴)-4H-8H-12H-12C-아자다이벤조[cd,mn]피렌, 4,7-다이(9H-카바졸-9-일)-1,10-페난트롤린, 2,2'-비스(4-(카바졸-9-일)페닐)바이페닐, 2,8-비스(다이페닐포스포릴)다이벤조[b,d]싸이오펜, 비스(2-메틸페닐)다이페닐실레인, 비스[3,5-다이(9H-카바졸-9-일)페닐]다이페닐실레인, 3,6-비스(카바졸-9-일)-9-(2-에틸-헥실)-9H-카바졸, 3-(다이페닐포스포릴)-9-(4-(다이페닐포스포릴)페닐)-9H-카바졸, 3,6-비스[(3,5-다이페닐)페닐]-9-페닐카바졸 등을 들 수 있고, 발광성 도판트와 공증착함으로써, 발광층을 형성해도 된다. As the material for forming the light emitting layer, tris (8-quinolinolate) aluminum (III) (Alq 3 ), bis (8-quinolinolate) zinc (II) (Znq 2 ) Quinolinolate) -4- (p-phenylphenolate) aluminum (III) (BAlq), 4,4'-bis (2,2-diphenylvinyl) biphenyl, 9,10- Di (naphthalen-2-yl) anthracene, 2,7-bis [9,9-di (4-methylphenyl) (Naphthalene-2-yl) anthracene, 2- (9,9-spirobifluoren-2-yl) -9 , 9- spirobifluorene, 2,7-bis (9,9-spirobifluorene-2-yl) -9,9-spirobifluorene, 2- [9,9- -Methylphenyl) -fluorene-2-yl] -9,9-di (4-methylphenyl) fluorene, 2,2'- (9,10-diphenylanthracene), 2, 2, 3, 4, 5, 6, (Pyrene-1-yl) benzene, 6,13-di (pyrene-1-yl) benzene, (Biphenyl-4-yl) pentacene, 3,9-di (naphthalen-2-yl) perylene, 3,10- Phenyl] amine, 10,10'-di (biphenyl-4-yl) -9,9'-bianthracene, N, N'- 1,1 ': 4', 1 ": 4", 1 "" -quaterphenyl] -4,4''-diamine, 4,4'-di [10- (naphthalen- ) Anthracene-9-yl] biphenyl, dibenzo {[f, f '] -4,4', 7,7'- , 3'-lm] perylene, 1- (7- (9,9'-bianthracene-10-yl) -9,9- (Carbazole-9-yl) benzene, 1,1-bis (9,9'-bithanthracene-10-yl) -9,9-dihexyl-9H- (Carbazol-9-yl) benzene, 4,4 ', 4 "-tris (carbazol-9-yl) triphenylamine, 4,4'- ) Biphenyl, 4,4'-bis (carbazol-9-yl) -2,2'-di (Carbazol-9-yl) -9,9-dimethylfluorene, 2,2 ', 7,7'-tetrakis (carbazol-9-yl) -9, 9,9-bis [4- (carbazol-9-yl) -9,9-di (p-tolyl) fluorene, 9,9- ) -Phenyl] fluorene, 2,7-bis (carbazol-9-yl) -9,9-spirobifluorene, 1,4-bis (triphenylsilyl) benzene, 1,3- (4-N, N-diethylamino-2-methylphenyl) -4-methylphenyl methane, 2,7-bis (carbazol- , 4,4'-di (triphenylsilyl) -p-terphenyl, 4,4'-di (triphenylsilyl) biphenyl, 9- Carbazole, 9- (4-t-butylphenyl) -3,6-ditolyl-9H-carbazole, 9- (9- (9H-carbazol-9-yl) phenyl) pyridine, triphenyl (triphenylphosphine) (9- phenyl-9H-fluoren-9-yl) phenyl) silane, 9,9-dimethyl-N, N Phenyl) -9H-fluorene-2-amine, 3,5-bis (3- (9H- 9-yl) phenyl) pyridine, 9,9-spirobifluorene-2-yl-diphenylphosphine oxide, 9,9 '- (5- (triphenylsilyl) (9H-carbazole), 3- (2,7-bis (diphenylphosphoryl) -9-phenyl-9H-fluorene- , 4,8,8,12,12-hexa (p-tolyl) -4H-8H-12H-12C-aza dibenzo [cd, mn] pyrene, 4,7-di (9H-carbazol- Bis (diphenylphosphoryl) dibenzo [b, d] azepin-2-yl) -1,10-phenanthroline, 2,2'- Di (9H-carbazol-9-yl) phenyl] diphenylsilane, 3,6-bis (carbazol-9-yl ) -9- (4- (diphenylphosphoryl) phenyl) -9H-carbazole, 3,6-bis [(3,5-diphenyl) phenyl] -9-phenylcarbazole, and the like, and a luminescent dopant and notarization By, or formed of a light-emitting layer.
발광성 도판트로서는 3-(2-벤조싸이아졸일)-7-(다이에틸아미노)큐마린, 2,3,6,7-테트라하이드로-1,1,7,7-테트라메틸-1H,5H,11H-10-(2-벤조싸이아졸일)퀴놀리디노[9,9a,1gh]큐마린, 퀴나크리돈, N,N'-다이메틸-퀴나크리돈, 트리스(2-페닐피리딘)이리듐(III)(Ir(ppy)3), 비스(2-페닐피리딘)(아세틸아세토네이트)이리듐(III)(Ir(ppy)2(acac)), 트리스[2-(p-톨릴)피리딘]이리듐(III)(Ir(mppy)3), 9,10-비스[N,N-다이(p-톨릴)아미노]안트라센, 9,10-비스[페닐(m-톨릴)아미노]안트라센, 비스[2-(2-하이드록시페닐)벤조싸이아졸레이트]아연(II), N10,N10,N10 ',N10'-테트라(p-톨릴)-9,9'-바이안트라센-10,10'-다이아민, N10,N10,N10 ',N10'-테트라페닐-9,9'-바이안트라센-10,10'-다이아민, N10,N10 '-다이페닐-N10,N10 '-다이나프탈렌일-9,9'-바이안트라센-10,10'-다이아민, 4,4'-비스(9-에틸-3-카바조바이닐렌)-1,1'-바이페닐, 페릴렌, 2,5,8,11-테트라-t-뷰틸페릴렌, 1,4-비스[2-(3-N-에틸카바졸일)바이닐]벤젠, 4,4'-비스[4-(다이-p-톨릴아미노)스티릴]바이페닐, 4-(다이-p-톨릴아미노)-4'-[(다이-p-톨릴아미노)스티릴]스틸벤, 비스(3,5-다이플루오로)-2-(2-피리딜)페닐-(2-카복시피리딜)이리듐(III), 4,4'-비스[4-(다이페닐아미노)스티릴]바이페닐, 비스(2,4-다이플루오로페닐피리디네이토)테트라키스(1-피라졸일)보레이트이리듐(III), N,N'-비스(나프탈렌-2-일)-N,N'-비스(페닐)-트리스(9,9-다이메틸플루오렌일렌), 2,7-비스{2-[페닐(m-톨릴)아미노]-9,9-다이메틸-플루오렌-7-일}-9,9-다이메틸-플루오렌, N-(4-((E)-2-(6 ((E)-4-(다이페닐아미노)스티릴)나프탈렌-2-일)바이닐)페닐)-N-페닐벤젠아민, fac-이리듐(III)트리스(1-페닐-3-메틸벤즈이미다졸린-2-일리덴-C,C2'), mer-이리듐(III)트리스(1-페닐-3-메틸벤즈이미다졸린-2-일리덴-C,C2'), 2,7-비스[4-(다이페닐아미노)스티릴]-9,9-스파이로바이플루오렌, 6-메틸-2-(4-(9-(4-(6-메틸벤조[d]싸이아졸-2-일)페닐)안트라센-10-일)페닐)벤조[d]싸이아졸, 1,4-다이[4-(N,N-다이페닐)아미노]스티릴벤젠, 1,4-비스(4-(9H-카바졸-9-일)스티릴)벤젠, (E)-6-(4-(다이페닐아미노)스티릴)-N,N-다이페닐나프탈렌-2-아민, 비스(2,4-다이플루오로페닐피리디네이토)(5-(피리딘-2-일)-1H-테트라졸레이트)이리듐(III), 비스(3-트라이플루오로메틸-5-(2-피리딜)피라졸)((2,4-다이플루오로벤질)다이페닐포스피네이트)이리듐(III), 비스(3-트라이플루오로메틸-5-(2-피리딜)피라졸레이트)(벤질다이페닐포스피네이트)이리듐(III), 비스(1-(2,4-다이플루오로벤질)-3-메틸벤즈이미다졸륨)(3-(트라이플루오로메틸)-5-(2-피리딜)-1,2,4-트라이아졸레이트)이리듐(III), 비스(3-트라이플루오로메틸-5-(2-피리딜)피라졸레이트)(4',6'-다이플루오로페닐피리디네이트)이리듐(III), 비스(4',6'-다이플루오로페닐피리디네이토)(3,5-비스(트라이플루오로메틸)-2-(2'-피리딜)피롤레이트)이리듐(III), 비스(4',6'-다이플루오로페닐피리디네이토)(3-(트라이플루오로메틸)-5-(2-피리딜)-1,2,4-트라이아졸레이트)이리듐(III), (Z)-6-메시틸-N-(6-메시틸퀴놀린-2(1H)-일리덴)퀴놀린-2-아민-BF2, (E)-2-(2-(4-(다이메틸아미노)스티릴)-6-메틸-4H-피란-4-일리덴)말로노나이트릴, 4-(다이사이아노메틸렌)-2-메틸-6-쥴롤리딜-9-엔일-4H-피란, 4-(다이사이아노메틸렌)-2-메틸-6-(1,1,7,7-테트라메틸쥴롤리딜-9-엔일)-4H-피란, 4-(다이사이아노메틸렌)-2-t-뷰틸-6-(1,1,7,7-테트라메틸쥴롤리딘-4-일-바이닐)-4H-피란, 트리스(다이벤조일메테인)페난트롤린유로퓸(III), 5,6,11,12-테트라페닐나프타센, 비스(2-벤조[b]싸이오펜-2-일-피리딘)(아세틸아세토네이트)이리듐(III), 트리스(1-페닐아이소퀴놀린)이리듐(III), 비스(1-페닐아이소퀴놀린)(아세틸아세토네이트)이리듐(III), 비스[1-(9,9-다이메틸-9H-플루오렌-2-일)-아이소퀴놀린](아세틸아세토네이트)이리듐(III), 비스[2-(9,9-다이메틸-9H-플루오렌-2-일)퀴놀린](아세틸아세토네이트)이리듐(III), 트리스[4,4'-다이-t-뷰틸-(2,2')-바이피리딘]루테늄(III)·비스(헥사플루오로포스페이트), 트리스(2-페닐퀴놀린)이리듐(III), 비스(2-페닐퀴놀린)(아세틸아세토네이트)이리듐(III), 2,8-다이-t-뷰틸-5,11-비스(4-t-뷰틸페닐)-6,12-다이페닐테트라센, 비스(2-페닐벤조싸이아졸레이트)(아세틸아세토네이트)이리듐(III), 5,10,15,20-테트라페닐테트라벤조포피린백금, 오스뮴(II)비스(3-트라이플루오로메틸-5-(2-피리딘)-피라졸레이트)다이메틸페닐포스핀, 오스뮴(II)비스(3-(트라이플루오로메틸)-5-(4-t-뷰틸피리딜)-1,2,4-트라이아졸레이트)다이페닐메틸포스핀, 오스뮴(II)비스(3-(트라이플루오로메틸)-5-(2-피리딜)-1,2,4-트라이아졸)다이메틸페닐포스핀, 오스뮴(II)비스(3-(트라이플루오로메틸)-5-(4-t-뷰틸피리딜)-1,2,4-트라이아졸레이트)다이메틸페닐포스핀, 비스[2-(4-n-헥실페닐)퀴놀린](아세틸아세토네이트)이리듐(III), 트리스[2-(4-n-헥실페닐)퀴놀린]이리듐(III), 트리스[2-페닐-4-메틸퀴놀린]이리듐(III), 비스(2-페닐퀴놀린)(2-(3-메틸페닐)피리디네이트)이리듐(III), 비스(2-(9,9-다이에틸-플루오렌-2-일)-1-페닐-1H-벤조[d]이미다졸레이토)(아세틸아세토네이트)이리듐(III), 비스(2-페닐피리딘)(3-(피리딘-2-일)-2H-크로멘-2-오네이트)이리듐(III), 비스(2-페닐퀴놀린)(2,2,6,6-테트라메틸헵테인-3,5-다이오네이트)이리듐(III), 비스(페닐아이소퀴놀린)(2,2,6,6-테트라메틸헵테인-3,5-다이오네이트)이리듐(III), 이리듐(III)비스(4-페닐싸이에노[3,2-c]피리디네이토-N,C2 ')아세틸아세토네이트, (E)-2-(2-t-뷰틸-6-(2-(2,6,6-트라이메틸-2,4,5,6-테트라하이드로-1H-피롤로[3,2,1-ij]퀴놀린-8-일)바이닐)-4H-피란-4-일리덴)말로노나이트릴, 비스(3-트라이플루오로메틸-5-(1-아이소퀴놀일)피라졸레이트)(메틸다이페닐포스핀)루테늄, 비스[(4-n-헥실페닐)아이소퀴놀린](아세틸아세토네이트)이리듐(III), 백금(II)옥타에틸포핀, 비스(2-메틸다이벤조[f,h]퀸옥살린)(아세틸아세토네이트)이리듐(III), 트리스[(4-n-헥실페닐)아이소퀴놀린]이리듐(III) 등을 들 수 있다. Examples of the luminescent dopant include 3- (2-benzothiazolyl) -7- (diethylamino) quadmarine, 2,3,6,7-tetrahydro-1,1,7,7-tetramethyl- , 11H-10- (2-benzothiazolyl) quinolizino [9,9a, 1gh] quimarin, quinacridone, N, N'-dimethyl- quinacridone, tris (2-phenylpyridine) iridium (III) (Ir (ppy) 3), bis (2-phenylpyridine) (acetylacetonate) iridium (III) (Ir (ppy) 2 (acac)), tris [2- (p- tolyl) pyridine] iridium (M-tolyl) amino] anthracene, bis [2, 3 -di (p- tolyl) amino] anthracene, - (2-hydroxyphenyl) benzothiazolale] zinc (II), N 10 , N 10 , N 10 ' , N 10' '- diamine, N 10, N 10, N 10', N 10 '- tetraphenyl -9,9'- bi anthracene -10,10'- diamine, N 10, N 10' - 10 -N-diphenyl , 10 N '- dimethyl -9,9'- bi-naphthalenyl anthracene -10,10'- diamine, 4,4'-bis (9-ethyl-3-vinyl carbazole crude alkylene) -1,1' Bis [2- (3-N-ethylcarbazolyl) vinyl] benzene, 4,4'-bis [ 4 - [(di-p-tolylamino) styryl] stilbene, bis (3,5 (2-pyridyl) phenyl- (2-carboxypyridyl) iridium (III), 4,4'-bis [4- (diphenylamino) styryl] biphenyl, bis N, N'-bis (phenyl) -bis (iridium) borate iridium (III) -Tris (9,9-dimethylfluorenylene), 2,7-bis {2- [phenyl (m-tolyl) amino] -9,9- -Dimethyl-fluorene, N- (4 - ((E) -2- (6 (E) -4- (diphenylamino) styryl) naphthalen- Iridium (III) tris (1-phenyl-3-methylbenzimidazoline-2-ylidene-C, C 2 ' ), mer- Benzimidazole 2-ylidene-C, C 2 ' ), 2,7-bis [4- (diphenylamino) styryl] -9,9- spirobifluorene, Yl) phenyl) benzo [d] thiazole, 1,4-di [4- (N, N (E) -6- (4- (diphenylamino) styryl) benzene, 1,4-bis (4- (9H-carbazol- (III), N, N-diphenyl naphthalene-2-amine, bis (2,4-difluorophenylpyridinate) (5- (pyridin- Bis (3-trifluoromethyl-5- (2-pyridyl) pyrazole) ((2,4-difluorobenzyl) diphenylphosphinate) iridium (III) (Benzyl diphenylphosphinate) iridium (III), bis (1- (2,4-difluorobenzyl) -3-methylbenzimidazolium) ( 3- (Trifluoromethyl) -5- (2-pyridyl) -1,2,4-triazololate A solution of iridium (III), bis (3-trifluoromethyl- (4 ', 6'-difluorophenyl pyridinate) (3', 6'-difluorophenyl pyridinate) iridium (III) (Trifluoromethyl) -2- (2'-pyridyl) pyrrolate), iridium (III), bis (4 ', 6'-difluorophenylpyridinate) (2-pyridyl) -1,2,4-triazolate) iridium (III), (Z) -6-mesityl-N- (6-mesitylquinolin- - ylidene) quinolin-2-amine -BF 2, (E) -2- ( 2- (4- ( dimethylamino) styryl) -6-methyl -4H- pyran-4-ylidene) words furnace nitro Methyl-6-methyl-6- (1, 1, 7-tetramethyl- , 7-tetramethyljulolididyl-9-enyl) -4H-pyran, 4- (dicyanomethylene) -2-t- butyl- 6- (1,1,7,7-tetramethyl- 4-yl-vinyl) -4H-pyran, tris (dibenzoylmethane) phenanthroline europium (III), 5,6,11,12-tetraphenylnaphthacene, bis Iridium (III), tris (1-phenylisoquinoline) iridium (III), bis (1-phenylisoquinoline) (acetylacetonate) iridium (III) - (9,9-dimethyl-9H-fluoren-2-yl) -isoquinoline] (acetylacetonate) iridium (III) (2,2 ') - bipyridine] ruthenium (III) bis (hexafluorophosphate), and tris [4,4'-di- Tris (2-phenylquinoline) iridium (III), bis (2-phenylquinoline) (acetylacetonate) iridium (III), 2,8- Butylphenyl) -6,12-diphenyltetracene, bis (2-phenylbenzothiazolate) (acetylacetonate) iridium (III), 5,10,15,20-tetraphenyltetrabenzoporphyrin platinum, osmium II) bis (3-trifluoromethyl-5- (2-pyridine) -pyrazolate) dimethylphenylphosphine, osmium (II) bis - (trifluoromethyl) -5- (4-t-butylpyridyl) -1,2,4-triazoleate) diphenylmethylphosphine, osmium (II) bis (3- (trifluoromethyl) (4-t-butylpyridyl) -5- (2-pyridyl) -1,2,4-triazole dimethylphenylphosphine, osmium (II) bis (3- (trifluoromethyl) (4-n-hexylphenyl) quinoline] (acetylacetonate) iridium (III), tris [2- (4-n-hexyl) Phenyl) quinoline] iridium (III), tris [2-phenyl-4-methylquinoline] iridium (III), bis (2-phenylquinoline) (Acetylacetonate) iridium (III), bis (2-phenylpyridine), bis (2-phenylpyridine) (3- (pyridin-2-yl) -2H-chromen-2-onate) iridium (III), bis (2-phenylquinoline) (2,2,6,6-tetramethylheptane- - dionate) iridium (III), bis (phenylisoquinoline) (2,2, 6,6-tetramethyl-heptane-3,5-diode carbonate) iridium (III), iridium (III) bis (4-wrapped in no [3,2-c] pyridinyl Nei Sat -N, C 2 ' ) Acetylacetonate, (E) -2- (2-t-butyl-6- (2- (2,6,6-trimethyl-2,4,5,6-tetrahydro-lH- pyrrolo [3 , 2,1-ij] quinolin-8-yl) vinyl) -4H-pyran-4-ylidene) malononitrile, bis (3-trifluoromethyl-5- (1-isoquinolyl) pyrazole (Methyldiphenylphosphine) ruthenium, bis [(4-n-hexylphenyl) isoquinoline] (acetylacetonate) iridium (III), platinum (II) f, h] quinoxaline (acetylacetonate) iridium (III) and tris [(4-n-hexylphenyl) isoquinoline] iridium (III).
전자 수송층/홀 블록층을 형성하는 재료로서는 8-하이드록시퀴놀리놀레이트-리튬, 2,2',2''-(1,3,5-벤진톨릴)-트리스(1-페닐-1-H-벤즈이미다졸), 2-(4-바이페닐)-5-(4-t-뷰틸페닐)-1,3,4-옥사다이아졸, 2,9-다이메틸-4,7-다이페닐-1,10-페난트롤린, 4,7-다이페닐-1,10-페난트롤린, 비스(2-메틸-8-퀴놀리놀레이트)-4-(페닐페놀레이트)알루미늄, 1,3-비스[2-(2,2'-바이피리딘-6-일)-1,3,4-옥사다이아조-5-일]벤젠, 6,6'-비스[5-(바이페닐-4-일)-1,3,4-옥사다이아조-2-일]-2,2'-바이피리딘, 3-(4-바이페닐)-4-페닐-5-t-뷰틸페닐-1,2,4-트라이아졸, 4-(나프탈렌-1-일)-3,5-다이페닐-4H-1,2,4-트라이아졸, 2,9-비스(나프탈렌-2-일)-4,7-다이페닐-1,10-페난트롤린, 2,7-비스[2-(2,2'-바이피리딘-6-일)-1,3,4-옥사다이아조-5-일]-9,9-다이메틸플루오렌, 1,3-비스[2-(4-t-뷰틸페닐)-1,3,4-옥사다이아조-5-일]벤젠, 트리스(2,4,6-트라이메틸-3-(피리딘-3-일)페닐)보레인, 1-메틸-2-(4-(나프탈렌-2-일)페닐)-1H-이미다조[4,5f] [1,10]페난트롤린, 2-(나프탈렌-2-일)-4,7-다이페닐-1,10-페난트롤린, 페닐-다이피렌일포스핀옥사이드, 3,3',5,5'-테트라[(m-피리딜)-펜-3-일]바이페닐, 1,3,5-트리스[(3-피리딜)-펜-3-일]벤젠, 4,4'-비스(4,6-다이페닐-1,3,5-트라이아진-2-일)바이페닐, 1,3-비스[3,5-다이(피리딘-3-일)페닐]벤젠, 비스(10-하이드록시벤조[h]퀴놀리네이토)베릴륨, 다이페닐비스(4-(피리딘-3-일)페닐)실레인, 3,5-다이(피렌-1-일)피리딘 등을 들 수 있다. Examples of the material for forming the electron transporting layer / hole blocking layer include 8-hydroxyquinolinolate-lithium, 2,2 ', 2 "- (1,3,5-benzyltolyl) Benzimidazole), 2- (4-biphenyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole, 2,9- 1, 10-phenanthroline, 4,7-diphenyl-1,10-phenanthroline, bis (2-methyl-8- quinolinolato) -4- (phenylphenolate) - bis [2- (2,2'-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] benzene, 6,6'- Yl) -2,2'-bipyridine, 3- (4-biphenyl) -4-phenyl-5-t-butylphenyl- (Naphthalene-2-yl) -4,7-diazabicyclo < / RTI > -Diphenyl-1,10-phenanthroline, 2,7-bis [2- (2,2'-bipyridin-6-yl) -1,3,4-oxadiazo- 1,3-bis [2- (4-t-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene, tris (2,4,6-tri Methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5f] [1,10] phenan- Tributylphosphine oxide, 3,3 ', 5,5'-tetra [((naphthalen-2-yl) -4,7-diphenyl-1,10-phenanthroline, (3-pyridyl) -phen-3-yl] benzene, 4,4'-bis (4,6-di Bis (3,5-di (pyridin-3-yl) phenyl] benzene, bis (10-hydroxybenzo [h] (Pyrin-3-yl) phenyl) silane, and 3,5-di (pyrene-1-yl) pyridine.
전자 주입층을 형성하는 재료로서는 산화 리튬(Li2O), 산화 마그네슘(MgO), 알루미나(Al2O3), 불화 리튬(LiF), 불화 소듐(NaF), 불화 마그네슘(MgF2), 불화 세슘(CsF), 불화 스트론튬(SrF2), 삼산화 몰리브데넘(MoO3), 알루미늄, 리튬아세틸아세토네이트(Li(acac)), 아세트산 리튬, 벤조산 리튬 등을 들 수 있다. Oxide as the material forming the electron injection layer of lithium (Li 2 O), magnesium oxide (MgO), alumina (Al 2 O 3), lithium fluoride (LiF), fluoride sodium (NaF), magnesium fluoride (MgF 2), fluoride Cesium fluoride (CsF), strontium fluoride (SrF 2 ), molybdenum trioxide (MoO 3 ), aluminum, lithium acetylacetonate (Li (acac)), lithium acetate and lithium benzoate.
음극 재료로서는 알루미늄, 마그네슘-은 합금, 알루미늄-리튬 합금, 리튬, 소듐, 포타슘, 세슘 등을 들 수 있다. Examples of the anode material include aluminum, a magnesium-silver alloy, an aluminum-lithium alloy, lithium, sodium, potassium, cesium and the like.
전자 블록층을 형성하는 재료로서는 트리스(페닐피라졸)이리듐 등을 들 수 있다. As a material for forming the electronic block layer, tris (phenylpyrazole) iridium and the like can be mentioned.
본 발명의 전하 수송성 바니시를 사용한 PLED 소자의 제작 방법은 특별히 한정되지 않지만, 이하의 방법을 들 수 있다. The method for producing the PLED device using the charge transporting varnish of the present invention is not particularly limited, but the following methods can be used.
상기 유기 EL 소자 제작에 있어서, 정공 수송층, 발광층, 전자 수송층, 전자 주입층의 진공 증착 조작을 행하는 대신, 정공 수송성 고분자층, 발광성 고분자층을 차례로 형성함으로써 본 발명의 전하 수송성 바니시에 의해 형성되는 전하 수송성 박막을 갖는 PLED 소자를 제작할 수 있다. In the production of the organic EL device, the hole transporting polymer layer and the luminescent polymer layer are sequentially formed instead of the vacuum evaporation operation of the hole transporting layer, the light emitting layer, the electron transporting layer, and the electron injecting layer to form the charge transporting varnish of the present invention A PLED device having a transport thin film can be manufactured.
구체적으로는, 양극 기판 위에 본 발명의 전하 수송성 바니시를 도포하여 상기의 방법에 의해 정공 주입층을 제작하고, 그 위에 정공 수송성 고분자층, 발광성 고분자층을 차례로 형성하고, 또한 음극을 증착하여 PLED 소자로 한다. Specifically, the hole transporting varnish of the present invention is applied onto the anode substrate, the hole injecting layer is formed by the above method, the hole transporting polymer layer and the luminescent polymer layer are sequentially formed thereon, and the cathode is vapor- .
사용하는 음극 및 양극 재료로서는 상기 유기 EL 소자 제작시와 동일한 것을 사용할 수 있고, 동일한 세정 처리, 표면 처리를 행할 수 있다. As the cathode and cathode materials to be used, the same materials as those used for manufacturing the organic EL device can be used, and the same cleaning treatment and surface treatment can be performed.
정공 수송성 고분자층 및 발광성 고분자층의 형성법으로서는 정공 수송성 고분자 재료 혹은 발광성 고분자 재료, 또는 이것들에 도판트 물질을 첨가한 재료에 용매를 가하여 용해하거나, 균일하게 분산하고, 정공 주입층 또는 정공 수송성 고분자층 위에 도포한 후, 각각 소성함으로써 성막하는 방법을 들 수 있다. The hole-transporting polymer layer and the light-emitting polymer layer may be formed by dissolving or uniformly dispersing a solvent in a hole transporting polymer material or a luminescent polymer material or a material to which a dopant material is added, Followed by firing each of them.
정공 수송성 고분자 재료로서는 폴리[(9,9-다이헥실플루오렌일-2,7-다이일)-co-(N,N'-비스{p-뷰틸페닐}-1,4-다이아미노페닐렌)], 폴리[(9,9-다이옥틸플루오렌일-2,7-다이일)-co-(N,N'-비스{p-뷰틸페닐}-1,1'-바이페닐렌-4,4-다이아민)], 폴리[(9,9-비스{1'-펜텐-5'-일}플루오렌일-2,7-다이일)-co-(N,N'-비스{p-뷰틸페닐}-1,4-다이아미노페닐렌)], 폴리[N,N'-비스(4-뷰틸페닐)-N,N'-비스(페닐)-벤지딘]-앤드 캡드 위드 폴리실세스퀴옥세인, 폴리[(9,9-다이옥틸플루오렌일-2,7-다이일)-co-(4,4'-(N-(p-뷰틸페닐))다이페닐아민)] 등을 들 수 있다. As the hole transporting polymeric material, poly [(9,9-diahexylfluorenyl-2,7-diyl) -co- (N, N'-bis {p- ), Poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (N, N'-bis {p-butylphenyl} -1,1'- Diamine)], poly [(9,9-bis {1'-pentene-5'-yl} fluorenyl-2,7-diyl) -co- (N, N'- (Phenylphenyl) -1,4-diaminophenylene), poly [N, N'-bis (4-butylphenyl) -N, N'-bis (4,4 '- (N- (p-butylphenyl)) diphenylamine)] and the like, .
발광성 고분자 재료로서는 폴리(9,9-다이알킬플루오렌)(PDAF) 등의 폴리플루오렌 유도체, 폴리(2-메톡시-5-(2'-에틸헥스옥시)-1,4-페닐렌바이닐렌)(MEH-PPV) 등의 폴리페닐렌바이닐렌 유도체, 폴리(3-알킬싸이오펜)(PAT) 등의 폴리싸이오펜 유도체, 폴리바이닐카바졸(PVCz) 등을 들 수 있다. Examples of the luminescent polymer material include polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), poly (2-methoxy-5- (2'-ethylhexoxy) (MEH-PPV), polythiophene derivatives such as poly (3-alkylthiophene) (PAT), and polyvinyl carbazole (PVCz).
용매로서는 톨루엔, 자일렌, 클로로폼 등을 들 수 있고, 용해 또는 균일분산법으로서는 교반, 가열 교반, 초음파 분산 등의 방법을 들 수 있다. Examples of the solvent include toluene, xylene, and chloroform. Examples of the dissolution or uniform dispersion method include stirring, heating stirring, and ultrasonic dispersion.
도포 방법으로서는 특별히 한정되는 것은 아니고, 잉크젯법, 스프레이법, 디핑법, 스핀 코팅법, 전사인쇄법, 롤 코팅법, 브러시 코팅법 등을 들 수 있다. 또한, 도포는 질소, 아르곤 등의 불활성 가스하에서 행하는 것이 바람직하다. The application method is not particularly limited, and examples thereof include an ink jet method, a spray method, a dipping method, a spin coating method, a transfer printing method, a roll coating method, and a brush coating method. The application is preferably carried out under an inert gas such as nitrogen or argon.
소성하는 방법으로서는 불활성 가스하 또는 진공중, 오븐 또는 핫플레이트에서 가열하는 방법을 들 수 있다. As a method of baking, a method of heating in an oven or a hot plate under an inert gas or in a vacuum may be mentioned.
실시예Example
이하, 합성예 및 실시예를 들어, 본 발명을 보다 구체적으로 설명하지만, 본 발명은 하기의 실시예에 한정되는 것은 아니다. 또한, 사용한 장치는 이하와 같다. Hereinafter, the present invention will be described in more detail by way of Synthesis Examples and Examples, but the present invention is not limited to the following Examples. The apparatus used is as follows.
(1) 1H-NMR: 니혼덴시(주)제, ECX-300(1) 1 H-NMR: ECX-300 manufactured by Nihon Denshi Co., Ltd.
(2) LC/MS: 워터즈사제, ZQ2000(2) LC / MS: ZQ2000 manufactured by Waters Co.
(3) 기판 세정: 쵸슈산교(주)제 기판 세정 장치(감압 플라즈마 방식)(3) Substrate cleaning: Substrate cleaning apparatus (reduced pressure plasma system) manufactured by Chosushi Sangyo Co.,
(4) 바니시의 도포: 미카사(주)제 스핀 코터 MS-A100(4) Application of Varnish: Spin Coater MS-A100 manufactured by Mikasa Co., Ltd.
(5) 막 두께 측정: (주)코사카켄큐쇼제 미세 형상 측정기 서프코더 ET-4000(5) Measurement of film thickness: Kosaka Kyokusho Co., Ltd. Fine shape measuring instrument Surfcoder ET-4000
(6) EL 소자의 제작: 쵸슈산교(주)제 다기능 증착 장치 시스템 C-E2L1G1-N(6) Fabrication of EL device: Multifunctional deposition apparatus system C-E2L1G1-N manufactured by Chosho Sangyo Co., Ltd.
(7) EL 소자의 휘도 등의 측정: (유)테크월드제 I-V-L 측정 시스템(7) Measurement of luminance and the like of the EL element: (I) Tech World I-V-L measurement system
[1] 아릴 아민 유도체의 합성[1] Synthesis of arylamine derivative
[합성예 1] 화합물 1의 합성[Synthesis Example 1] Synthesis of Compound 1
4-브로모-4'-아이오도바이페닐(8.98g, 25mmol, 토쿄카세이고교(주)제), 아닐린(2.56g, 27.5mmol)의 톨루엔 현탁액(90mL)에, Pd(PPh3)4(1.44g, 1.25mmol), t-BuONa(2.88g, 30mmol)를 가하고, 질소 치환 후, 10시간 가열 환류했다. 반응 종료 후, 실온까지 방냉하고, 셀라이트 여과했다. 여과액을 농축하고 얻어진 조생성물을 실리카겔 컬럼 크로마토그래피(용출액: 톨루엔)로 정제하여, 화합물 1을 포함하는 유분(留分)을 농축했다. 얻어진 조생성물에 에탄올/톨루엔(3:1(w/w))의 혼합 용매를 가하고, 가열 환류하에, 용해시켰다. 실온까지 냉각한 후, 석출한 고체를 여과하여, 담갈색 고체의 화합물 1(6.96g, 수율 86%)을 얻었다. 1H-NMR 및 LC/MS의 측정 결과를 이하에 나타낸다. 4-bromo-4'-in child ohdobayi phenyl (8.98g, 25mmol, Tokyo Kasei Kogyo (Co., Ltd.)), aniline toluene suspension (90mL) of (2.56g, 27.5mmol), Pd ( PPh 3) 4 (1.44 g, 1.25 mmol) and t-BuONa (2.88 g, 30 mmol) were added, and the mixture was heated under reflux for 10 hours. After completion of the reaction, the reaction mixture was allowed to cool to room temperature and filtered through celite. The filtrate was concentrated and the resulting crude product was purified by silica gel column chromatography (eluent: toluene) to concentrate the fraction containing the compound 1 (fraction). To the resulting crude product was added a mixed solvent of ethanol / toluene (3: 1 (w / w)) and dissolved under heating and refluxing. After cooling to room temperature, the precipitated solid was filtered to obtain Compound 1 (6.96 g, yield 86%) as a pale brown solid. The measurement results of 1 H-NMR and LC / MS are shown below.
[합성예 2] 아릴아민 유도체 H1의 합성[Synthesis Example 2] Synthesis of arylamine derivative H1
9,9-비스(4-아미노페닐)플루오렌(1g, 2.87mmol, 토쿄카세이고교(주)제), 합성예 1에서 얻어진 화합물 1(1.95g, 6.0mmol)의 자일렌 현탁액(10mL)에, Pd(PPh3)4(166mg, 0.14mmol), t-BuONa(0.66g, 6.89mmol)를 가하고, 질소 치환 후, 4시간 가열 환류했다. 그 후에 합성예 1에서 얻어진 화합물 1(0.37g, 1.1mmol), t-BuONa(0.11g, 1.21mmol)를 가하고, 6시간 더 가열 환류했다. 반응 종료 후, 실온까지 방냉하고, 클로로폼(40mL), 물(40mL)을 가하고, 30분간 실온에서 교반했다. 불용의 고체를 여과에 의해 수집하고, THF에 용해시킨 후, 셀라이트 여과했다. 여과액을 농축하여 얻어진 조생성물을 실리카겔 컬럼 크로마토그래피(용출액:헥세인/아세트산 에틸(1/1(v/v)))로 정제하여, 아릴아민 유도체 H1을 포함하는 유분을 농축했다. 얻어진 조생성물을 에탄올로 세정하여, 담회색 고체의 아릴아민 유도체 H1(1.15g, 수율 48%)을 얻었다. 1H-NMR 및 LC/MS의 측정결과를 이하에 나타낸다. To a xylene suspension (10 mL) of 9,9-bis (4-aminophenyl) fluorene (1 g, 2.87 mmol, manufactured by Tokyo Kasei Kogyo K.K.) and Compound 1 (1.95 g, 6.0 mmol) obtained in Synthesis Example 1 , Pd (PPh 3) 4 ( 166mg, 0.14mmol), t-BuONa was added (0.66g, 6.89mmol), was heated to reflux and then purged with nitrogen for 4 hours. After that, the compound 1 (0.37 g, 1.1 mmol) obtained in Synthesis Example 1 and t-BuONa (0.11 g, 1.21 mmol) were added and the mixture was heated to reflux for 6 hours. After completion of the reaction, the mixture was allowed to cool to room temperature, chloroform (40 mL) and water (40 mL) were added, and the mixture was stirred at room temperature for 30 minutes. The insoluble solid was collected by filtration, dissolved in THF and filtered through celite. The filtrate was concentrated, and the resulting crude product was purified by silica gel column chromatography (eluent: hexane / ethyl acetate (1/1 (v / v))) to concentrate the oil containing the arylamine derivative H1. The obtained crude product was washed with ethanol to obtain an arylamine derivative H1 (1.15 g, yield 48%) as a pale gray solid. The measurement results of 1 H-NMR and LC / MS are shown below.
[합성예 3] 아릴아민 유도체 H2의 합성[Synthesis Example 3] Synthesis of arylamine derivative H2
1,1-비스(4-아미노페닐)사이클로헥세인(0.8g, 3mmol, 토쿄카세이고교(주)제), 합성예 1에서 얻어진 화합물 1(2.14g, 6.6mmol), Pd(PPh3)4(173mg, 0.15mmol), t-BuONa(0.72g, 7.5mmol), 자일렌(8mL)을 사용하고, 합성예 2와 동일한 수순으로, 담회색 고체의 아릴아민 유도체 H2(1.26g, 수율 56%)를 얻었다. 1H-NMR 및 LC/MS의 측정결과를 이하에 나타낸다. 1,1-bis (4-aminophenyl) cyclohexane (0.8g, 3mmol, Tokyo Kasei Kogyo (Co., Ltd.)) of the compound obtained in Synthesis Example 1 1 (2.14g, 6.6mmol), Pd (PPh 3) 4 (1.26 g, yield 56%) was obtained in the same procedure as in Synthesis Example 2, except that t-BuONa (0.72 g, 7.5 mmol) and xylene (8 mL) ). The measurement results of 1 H-NMR and LC / MS are shown below.
[합성예 4] 아릴아민 유도체 H3의 합성[Synthesis Example 4] Synthesis of arylamine derivative H3
4,4'-다이아미노다이페닐메테인(0.6g, 3mmol, 토쿄카세이고교(주)제), 합성예 1에서 얻어진 화합물 1(2.14g, 6.6mmol), Pd(PPh3)4(173mg, 0.15mmol), t-BuONa(0.72g, 7.5mmol), 자일렌(6mL)을 사용하고, 합성예 2와 동일한 수순으로 담회색 고체의 아릴아민 유도체 H3(1.45g, 수율 71%)을 얻었다. 1H-NMR 및 LC/MS의 측정결과를 이하에 나타낸다. 4,4'-diamino diphenyl methane (0.6g, 3mmol, Tokyo Kasei Kogyo (Co., Ltd.)), the compound obtained in Synthesis Example 1 1 (2.14g, 6.6mmol), Pd (PPh 3) 4 (173mg, 0.15 mmol), t-BuONa (0.72 g, 7.5 mmol) and xylene (6 mL) were used in the same manner as in Synthesis Example 2 to obtain an arylamine derivative H3 (1.45 g, yield 71%) as a pale gray solid. The measurement results of 1 H-NMR and LC / MS are shown below.
[2] 전하 수송성 바니시의 조제[2] preparation of charge transport varnish
[실시예 1-1][Example 1-1]
아릴아민 유도체 H1 0.113g(0.135mmol) 및 하기 식으로 표시되는 도판트 물질 D1 0.091g(0.101mmol)의 혼합물에 대하여, 질소 분위기하에서 양용매인 1,3-다이메틸-2-이미다졸리딘온 7.2g을 가하여 용해했다. 이 용액에 사이클로헥산올 1.4g 및 프로필렌글라이콜 1.4g을 가하고, 충분히 교반하여 황색 투명 용액을 얻었다. 얻어진 용액을 구멍 직경 0.2㎛의 PTFE제 필터를 사용해서 여과하여, 황색 투명의 전하 수송성 바니시를 얻었다(고형분 농도 2.0질량%). A mixture of 0.113 g (0.135 mmol) of the arylamine derivative H1 and 0.091 g (0.101 mmol) of the dopant substance D1 represented by the following formula was added to a mixture of 1,3-dimethyl-2-imidazolidinone 7.2 g. To this solution, 1.4 g of cyclohexanol and 1.4 g of propylene glycol were added and sufficiently stirred to obtain a yellow transparent solution. The resulting solution was filtered using a PTFE filter having a pore diameter of 0.2 占 퐉 to obtain a yellow transparent charge-transporting varnish (solid content concentration: 2.0% by mass).
또한, 도판트 물질 D1은 국제공개 제2006/025342호의 기재에 근거하여 합성했다. Further, the dopant substance D1 was synthesized based on the description in WO 2006/025342.
[실시예 1-2][Example 1-2]
아릴아민 유도체 H1 0.098g(0.117mmol) 및 도판트 물질 D1 0.106g(0.117mmol)의 혼합물을 사용한 이외는, 실시예 1-1과 동일하게 하여 황색 투명의 전하 수송성 바니시를 얻었다(고형분 농도 2.0질량%). A yellow transparent charge-transporting varnish was obtained in the same manner as in Example 1-1 except that a mixture of 0.098 g (0.117 mmol) of the arylamine derivative H1 and 0.106 g (0.117 mmol) of the dopant D1 was used (solid content concentration 2.0 mass% %).
[실시예 1-3][Example 1-3]
아릴아민 유도체 H1 0.062g(0.074mmol) 및 인텅스텐산(간토카가쿠(주)제) 0.247g의 혼합물을 사용한 이외는, 실시예 1-1과 동일하게 하여 황색 투명의 전하 수송성 바니시를 얻었다(고형분 농도 3.0질량%). A yellow transparent charge-transporting varnish was obtained in the same manner as in Example 1-1 except that a mixture of 0.062 g (0.074 mmol) of the arylamine derivative H1 and 0.247 g of tungstic acid (manufactured by Kanto Kagaku Co., Ltd.) was used Solid content concentration: 3.0% by mass).
[실시예 1-4][Example 1-4]
아릴아민 유도체 H2 0.062g(0.082mmol) 및 인텅스텐산 0.247g의 혼합물을 사용한 이외는, 실시예 1-1과 동일하게 하여 황색 투명의 전하 수송성 바니시를 얻었다(고형분 농도 3.0질량%). (Solid content concentration: 3.0% by mass) was obtained in the same manner as in Example 1-1 except that a mixture of 0.062 g (0.082 mmol) of the arylamine derivative H2 and 0.247 g of tungstic acid was used.
[실시예 1-5][Example 1-5]
아릴아민 유도체 H3 0.062g(0.090mmol) 및 인텅스텐산 0.247g의 혼합물을 사용한 이외는, 실시예 1-1과 동일하게 하여 황색 투명의 전하 수송성 바니시를 얻었다(고형분 농도 3.0질량%). (Solid content concentration: 3.0% by mass) was obtained in the same manner as in Example 1-1 except that a mixture of 0.062 g (0.090 mmol) of the arylamine derivative H3 and 0.247 g of tungstic acid was used.
[3] 유기 EL 소자의 제작 및 초기 특성[3] Fabrication and initial characteristics of organic EL devices
전기 특성을 평가할 때의 기판에는, 인듐주석 산화물이 표면 상에 막 두께 150nm로 패터닝된 25mm×25mm×0.7t의 유리 기판(이하 ITO 기판으로 약칭함)을 사용했다. ITO 기판은 O2 플라즈마 세정 장치(150W, 30초간)를 사용하여 표면 상의 불순물을 제거하고 나서 사용했다. A glass substrate (hereinafter abbreviated as ITO substrate) of 25 mm x 25 mm x 0.7 t in which indium tin oxide was patterned to have a film thickness of 150 nm on the surface was used as a substrate for evaluating the electrical characteristics. The ITO substrate was used after removing impurities on the surface by using an O 2 plasma cleaning apparatus (150 W, 30 seconds).
[실시예 2-1][Example 2-1]
실시예 1-1에서 얻어진 바니시를 스핀 코터를 사용하여 ITO 기판에 도포한 후, 80℃에서 1분간 건조하고, 또한 230℃에서 15분간 소성하여, ITO 기판 위에 30nm의 균일한 박막을 형성했다. The varnish obtained in Example 1-1 was applied to an ITO substrate using a spin coater, dried at 80 DEG C for 1 minute, and further baked at 230 DEG C for 15 minutes to form a uniform thin film of 30 nm on the ITO substrate.
박막을 형성한 ITO 기판에 대하여, 증착 장치를 사용하여 α-NPD, Alq3, 불화 리튬, 및 알루미늄의 박막을 차례로 적층하고, 유기 EL 소자를 얻었다. 막 두께는 각각 30nm, 40nm, 0.5nm 및 100nm로 하고, 진공도 1.0×10-5Pa, 증착 레이트는 불화 리튬에서는 0.02nm/초, 그 이외의 재료에서는 0.2nm/초의 조건으로 증착을 행했다. With respect to the ITO substrate to form a thin film, using the evaporation apparatus α-NPD, Alq 3, lithium fluoride, and a laminated aluminum film in order to obtain an organic EL device. The deposition was carried out under conditions of a film thickness of 30 nm, 40 nm, 0.5 nm and 100 nm, a degree of vacuum of 1.0 × 10 -5 Pa, a deposition rate of 0.02 nm / sec for lithium fluoride and 0.2 nm / sec for the other materials.
또한, 공기 중의 산소, 물 등의 영향에 의한 특성 열화를 방지하기 위해, 유기 EL 소자는 밀봉 기판에 의해 밀봉한 후, 그 특성을 평가했다. 밀봉은 이하의 수순으로 행했다. Further, in order to prevent deterioration of characteristics due to the influence of oxygen, water, and the like in the air, the organic EL element was sealed with a sealing substrate, and then its characteristics were evaluated. The sealing was performed in the following procedure.
산소농도 5ppm 이하, 이슬점 -80℃ 이하의 질소 분위기 중에서, 유기 EL 소자를 밀봉 기판에 넣고, 밀봉 기판을 접착제로 첩합했다. 이때, 데시컨트로서 다이닉(주)제 HD-071010W-40을 유기 EL 소자와 함께 밀봉 기판 내에 넣었다. 접착제로서는 (주)MORESCO제 모레스코 모이스처 컷 WB90US(P)를 사용했다. 첩합한 밀봉 기판에 대하여, UV광을 조사(파장: 365nm, 조사량: 6000mJ/cm2)한 후, 80℃에서 1시간, 어닐링 처리하여 접착제를 경화시켰다. The organic EL device was placed in a sealing substrate in a nitrogen atmosphere having an oxygen concentration of 5 ppm or less and a dew point of -80 占 폚 or less and the sealing substrate was bonded with an adhesive. At this time, as the desiccant HD-071010W-40 made by Dainic Co., Ltd. was put together with the organic EL element in the sealing substrate. As the adhesive agent, MORESCO Moisture Moisture Cut WB90US (P) manufactured by MORESCO Co., Ltd. was used. The bonded sealing substrate was irradiated with UV light (wavelength: 365 nm, irradiation amount: 6000 mJ / cm 2 ) and annealed at 80 캜 for 1 hour to cure the adhesive.
[실시예 2-2∼2-5][Examples 2-2 to 2-5]
실시예 1-2∼1-5에서 얻어진 바니시를 사용한 이외는, 실시예 2-1과 동일한 방법으로 유기 EL 소자를 제작했다. An organic EL device was fabricated in the same manner as in Example 2-1 except that the varnish obtained in Examples 1-2 to 1-5 was used.
실시예 2-1∼2-5에서 얻어진 유기 EL 소자의 전기 특성을 전류-전압-휘도 측정 시스템을 사용하여 측정했다. 구동 전압 5V에서의 전류밀도 및 휘도를 표 1에 나타낸다. 또한, 각 소자의 발광면 사이즈의 면적은 2mm×2mm이다. The electric characteristics of the organic EL devices obtained in Examples 2-1 to 2-5 were measured using a current-voltage-luminance measurement system. Table 1 shows the current density and luminance at a driving voltage of 5V. The area of the light emitting surface size of each element is 2 mm x 2 mm.
(mA/cm2)Current density
(mA / cm 2 )
(cd/m2)Luminance
(cd / m 2 )
표 1에 나타내어지는 바와 같이, 실시예 2-1∼2-5에서 제작한 유기 EL 소자는 실용적인 전압의 범위 내에서 충분히 발광하는 것을 알 수 있다. As shown in Table 1, it can be seen that the organic EL devices manufactured in Examples 2-1 to 2-5 emit light sufficiently within a practical voltage range.
이상으로부터, 본 발명의 전하 수송성 물질을 사용한 박막을 정공 주입층으로서 사용함으로써 휘도 특성이 우수한 유기 EL 소자가 얻어지는 것을 알았다. From the above, it has been found that an organic EL device having excellent luminance characteristics can be obtained by using a thin film using the charge-transporting material of the present invention as a hole injection layer.
Claims (9)
[식 중, R1∼R8은, 서로 독립하여, 수소 원자, 할로젠 원자, 또는 Z1로 치환되어 있어도 되는, 탄소수 1∼20의 알킬기 혹은 탄소수 1∼20의 알콕시기를 나타내고,
Ar1은 Z2로 치환되어 있어도 되는 탄소수 6∼20의 아릴기를 나타내고,
n은 1∼3의 정수를 나타내고,
X는 식 (2a) 또는 (2b)로 표시되는 2가의 유기기를 나타내고,
(식 중, R9 및 R10은, 서로 독립하여, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 플루오로알킬기, Z2로 치환되어 있어도 되는 탄소수 6∼20의 아릴기를 나타내거나, R9와 R10이 결합하여, 탄소수 3∼21의 축환하고 있어도 되는 환식 탄화 수소기를 나타내고,
R11 및 R12는, 서로 독립하여, 수소 원자 또는 불소 원자를 나타내고,
R13∼R20은, 서로 독립하여, 수소 원자, 탄소수 1∼20의 알킬기, 탄소수 1∼20의 플루오로알킬기, 또는 Z3을 나타내고,
m은 1∼4의 정수를 나타낸다.)
Z1은 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 카복실산기, 또는 Z3으로 치환되어 있어도 되는, 탄소수 6∼20의 아릴기 혹은 탄소수 2∼20의 헤테로아릴기를 나타내고,
Z2는 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 카복실산기, 또는 Z3으로 치환되어 있어도 되는, 탄소수 1∼20의 알킬기, 탄소수 2∼20의 알켄일기 혹은 탄소수 2∼20의 알킨일기를 나타내고,
Z3은 할로젠 원자, 나이트로기, 사이아노기, 아미노기, 알데하이드기, 수산기, 싸이올기, 설폰산기, 또는 카복실산기를 나타낸다.]A charge-transporting material comprising an arylamine derivative represented by the formula (1).
Wherein R 1 to R 8 independently represent a hydrogen atom, a halogen atom, or an alkyl group having 1 to 20 carbon atoms or an alkoxy group having 1 to 20 carbon atoms, which may be substituted with Z 1 ,
Ar 1 represents an aryl group having 6 to 20 carbon atoms which may be substituted with Z 2 ,
n represents an integer of 1 to 3,
X represents a divalent organic group represented by the formula (2a) or (2b)
(Wherein R 9 and R 10 are independently of each other an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms which may be substituted with Z 2 , or R 9 And R < 10 > are bonded to form a cyclic hydrocarbon group of 3 to 21 carbon atoms which may be condensed,
R 11 and R 12 independently represent a hydrogen atom or a fluorine atom,
R 13 to R 20 independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, or Z 3 ,
and m represents an integer of 1 to 4).
Z 1 is a halogen atom, a group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, or an aryl group of 6 to 20 carbon atoms optionally substituted by Z 3 or a C2-nitro Lt; / RTI > to < RTI ID =
Z 2 is a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group, a carboxylic acid group, or an alkyl group, having 1 to 20 carbon atoms optionally substituted by Z 3, carbon number of 2 to An alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms,
Z 3 represents a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxyl group, a thiol group, a sulfonic acid group or a carboxylic acid group.
상기 X가 식 (3a)∼(3h)로 표시되는 2가의 유기기로부터 선택되는 1종인 것을 특징으로 하는 전하 수송성 물질.
The method according to claim 1,
Wherein X is one kind selected from divalent organic groups represented by formulas (3a) to (3h).
도판트 물질을 더 포함하는 것을 특징으로 하는 전하 수송성 바니시.5. The method of claim 4,
Lt; RTI ID = 0.0 > a < / RTI > dopant material.
상기 도판트 물질이 헤테로폴리산을 포함하는 것을 특징으로 하는 전하 수송성 바니시.6. The method of claim 5,
Wherein the dopant material comprises a heteropoly acid.
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WO2014141998A1 (en) * | 2013-03-11 | 2014-09-18 | 日産化学工業株式会社 | Charge-transporting varnish |
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US2684932A (en) | 1954-07-27 | Unitfd statfs patfnt offiff | ||
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JP2002179630A (en) | 2000-09-28 | 2002-06-26 | Hodogaya Chem Co Ltd | Polyamino-fluorene derivative |
KR100650955B1 (en) | 2005-09-01 | 2006-11-29 | 엠텍비젼 주식회사 | Method and apparatus for adjusting auto focus |
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