KR20170064088A - Display device - Google Patents

Abstract

These embodiments disclose a display device. A display device according to the disclosed embodiments includes a substrate divided into a plurality of sub-pixels, an active layer on the substrate, a first insulating layer on the active layer, a gate electrode on the first insulating layer, A second insulating layer made of a conductive material; a source electrode and a drain electrode which are disposed on the second insulating layer and contact the active layer; and an electrode layer disposed on the source electrode and the drain electrode. Thus, a display device capable of simplifying the structure and the process can be provided.

Description

Display device {DISPLAY DEVICE}

The present embodiments relate to a display device, and more specifically, to a display device capable of simplifying a structure and a process.

BACKGROUND ART [0002] As an information society has developed, demand for a display device for displaying an image has increased in various forms. Recently, a liquid crystal display device (LCD), a plasma display panel device (PDP) Various display devices such as an organic light emitting diode (OLED) display device have been used.

Such a display device includes a lower substrate on which a plurality of thin film transistors are arranged. On the lower substrate, a plurality of thin film transistors Tr, an interlayer dielectric (ILD), a passivation layer (PAS), and an overcoat layer (OC: Overcoat) are included.

Here, the interlayer insulating film and the passivation film are formed for the purpose of protecting the thin film transistor from the external environment, and in the case of the overcoat layer, the substrate having the step difference due to the thin film transistor is formed to planarize.

On the other hand, there is a problem that the thickness of the lower substrate increases due to the interlayer insulating film and the overcoat layer, and a plurality of mask processes are required to form a plurality of electrode layers disposed on the lower substrate. Therefore, there is a demand for a display device capable of solving such a problem.

The embodiments of the present invention are intended to solve the above problems and provide a display device capable of simplifying the structure and simplifying the manufacturing process of the display device.

According to an aspect of the present invention, there is provided a display device including a substrate divided into a plurality of sub-pixels, an active layer disposed on the substrate, a first insulating layer disposed on the active layer, A gate electrode disposed on the first insulating layer, a second insulating layer disposed on the gate electrode, a source electrode and a drain electrode disposed on the second insulating layer, the source electrode and the drain electrode contacting the active layer, And a bank pattern disposed on a part of the upper surface of the electrode layer and the second insulating layer.

Here, the second insulating layer may be formed of a nonconductive material. The nonconductive material may be a fluorine-based polymer or a material constituting a deoxyribonucleic acid (DNA).

In addition, the electrode layer may be formed of a reflective material or a transparent conductive material.

When the electrode layer is made of a transparent conductive material, a reflective layer may be further disposed between the drain electrode and the electrode layer.

The plurality of sub-pixels may include at least one sub-pixel having a configuration in which a second insulating layer, a drain electrode, and an electrode layer are sequentially disposed in a non-emitting region, and a second insulating layer and an electrode layer are sequentially disposed in the light- You can include,

The plurality of sub-pixels may include a second insulating layer, a drain electrode, and an electrode layer sequentially arranged in the non-emitting region, and the second insulating layer, the wavelength converting layer, and the electrode layer are sequentially disposed in the light emitting region. May be included.

The plurality of sub-pixels may include a second insulating layer, a drain electrode, and an electrode layer sequentially arranged in the non-emitting region, and the second insulating layer, the first electrode layer, the wavelength converting layer, and the second electrode layer are sequentially arranged And a sub-pixel composed of a plurality of sub-pixels.

Here, the wavelength conversion layer may be formed of an inorganic insulating material.

The plurality of sub-pixels may include a sub-pixel in which a second insulating layer, a drain electrode, and an electrode layer are sequentially arranged in a non-emitting region, and a second insulating layer, a color layer, and an electrode layer are sequentially disposed in the light emitting region At least one of them may be included.

Here, the color layer may transmit only light in a wavelength region emitting a specific color.

In the display device according to the present embodiment, since the insulating film disposed on the gate electrode is made of a nonconductive material, it has an effect of protecting the gate electrode and alleviating a stepped portion caused by the active layer, the gate insulating film, and the gate electrode .

In the display device according to the present embodiment, since the insulating film disposed on the gate electrode is made of a nonconductive material, the structure of the interlayer insulating film for protecting the thin film transistor and the structure of the overcoat layer for flattening the substrate can be eliminated, The process can be simplified and the panel thickness can be reduced.

Further, in the display device according to the present embodiments, the insulating film disposed on the gate electrode can flatten the substrate, and the pixel electrode or the first electrode of the organic light emitting element can be disposed on the drain electrode. Accordingly, since the drain electrode and the pixel electrode or the first electrode can be formed in the same process, the mask reduction effect compared to the conventional structure can be expected.

1 is a schematic system configuration diagram of a display apparatus according to the present embodiments.
2 is a plan view showing a part of a display device according to the first embodiment.
3 is a cross-sectional view of the display device according to the first embodiment taken along line AB.
4 is a plan view showing a part of a display device according to a comparative example.
5 is a cross-sectional view of a display device according to a comparative example taken along a CD.
6 is a plan view showing a part of a display device according to the second embodiment.
7 is a cross-sectional view taken along the line EF of the display device according to the second embodiment.
8 is a cross-sectional view showing a part of a display device according to another embodiment.
9 is a cross-sectional view showing a part of a display device according to another embodiment.
10 is a plan view showing a part of a display device according to the third embodiment.
11 is a sectional view taken along the line HG of the display device according to the third embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, it is to be understood that the present invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification. The dimensions and relative sizes of the layers and regions in the figures may be exaggerated for clarity of illustration.

It will be understood that when an element or layer is referred to as being another element or "on" or "on ", it includes both intervening layers or other elements in the middle, do. On the other hand, when a device is referred to as "directly on" or "directly above ", it does not intervene another device or layer in the middle.

The terms spatially relative, "below," "lower," "above," "upper," and the like, And may be used to easily describe the correlation with other elements or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions.

In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and the terms do not limit the nature, order, order, or number of the components.

1 is a schematic system configuration diagram of a display apparatus according to the present embodiments. 1, a display device 1000 according to the present embodiment includes a plurality of data lines DL to DLm and a plurality of gate lines GL1 to GLn, and a plurality of sub pixels A data driver 1200 driving the plurality of data lines DL through DLm, a gate driver 1300 driving the plurality of gate lines GL1 through GLn, a data driver 1200, A timing controller 1400 for controlling the gate driver 1300, and the like.

The data driver 1200 drives a plurality of data lines by supplying data voltages to the plurality of data lines. The gate driver 1300 sequentially supplies the scan signals to the plurality of gate lines to sequentially drive the plurality of gate lines.

The timing controller 1400 controls the data driver 1200 and the gate driver 1300 by supplying control signals to the data driver 1200 and the gate driver 1300. The timing controller 1400 starts scanning according to the timing implemented in each frame, switches the input image data input from the outside according to the data signal format used by the data driver 1200, and outputs the converted image data , And controls the data driving at a suitable time according to the scan.

Under the control of the timing controller 1400, the gate driver 1300 sequentially supplies a scan signal of an On voltage or an Off voltage to a plurality of gate lines to sequentially drive a plurality of gate lines . 1, the gate driver 1300 may be located on only one side of the display panel 1100, or may be located on both sides, depending on the driving method, the display panel design method, and the like.

In addition, the gate driver 1300 may include one or more gate driver integrated circuits. Each gate driver integrated circuit may be connected to a bonding pad of the display panel 1100 by a tape automated bonding (TAB) method or a chip on glass (COG) And may be disposed directly on the display panel 1100 or integrated on the display panel 1100 as the case may be.

Also, each gate driver integrated circuit may be implemented by a chip on film (COF) method. In this case, the gate driving chip corresponding to each gate driving unit integrated circuit is mounted on the flexible film, and one end of the flexible film can be bonded to the display panel 1100.

When the specific gate line is opened, the data driver 1200 converts the image data received from the timing controller 1400 into an analog data voltage and supplies the data voltage to the plurality of data lines to drive the plurality of data lines. The data driver 1200 may include at least one source driver integrated circuit to drive a plurality of data lines.

Each source driver integrated circuit may be connected to a bonding pad of the display panel 1100 by a tape automated bonding (TAB) method or a chip on glass (COG) method, or may be connected directly to the display panel 1100 And may be integrated and disposed on the display panel 1100 as occasion demands.

In addition, each source driver integrated circuit can be implemented by a chip on film (COF) method. In this case, the source driver chip corresponding to each source driver integrated circuit is mounted on the flexible film, one end of the flexible film is bonded to at least one source printed circuit board, and the other end is connected to the display panel 1100).

The source printed circuit board is connected to a control printed circuit board through a connection medium such as a flexible flat cable (FFC) or a flexible printed circuit (FPC). A timing controller 1400 is disposed on the control printed circuit board.

Further, a power controller (not shown) for controlling the voltage or current to supply or supply voltage or current to the display panel 1100, the data driver 1200, and the gate driver 1300 may be further disposed on the control printed circuit board have. The source printed circuit board and the control printed circuit board mentioned above may be a single printed circuit board.

In the following embodiments, a pixel includes one or more subpixels. For example, one pixel may include two to four sub-pixels. (R), green (G), blue (B), and optionally white (W) colors as defined by the sub-pixels, but the present invention is not limited thereto.

In addition, the present embodiments are applicable to various display devices such as a liquid crystal display device, an organic light emitting display device, and an electrophoretic display device. However, for convenience of description, the description of embodiments to be described later will be centered on a configuration applied to the organic light emitting diode display.

In addition, the organic light emitting device of the present embodiments may include a first electrode, an organic light emitting layer, and a second electrode, and the organic light emitting layer may be disposed for each sub-pixel or disposed on the entire surface of the lower substrate.

In this case, an electrode connected to the thin film transistor for controlling light emission of each sub-pixel of the display panel is referred to as a first electrode, and an electrode disposed on the entire surface of the display panel or arranged to include two or more pixels is referred to as a second electrode. When the first electrode is an anode electrode, the second electrode is a cathode electrode, and vice versa. Hereinafter, the anode electrode will be described as an embodiment of the first electrode, and the cathode electrode will be described as an example of the second electrode, but the present embodiments are not limited thereto.

Next, a display device according to the first embodiment will be described with reference to FIGS. 2 and 3. FIG. 2 is a plan view showing a part of a display device according to the first embodiment.

Referring to FIG. 2, the display device according to the first embodiment includes a plurality of sub-pixels SP1 and SP2. Here, one sub-pixel is defined by intersecting the gate line 110 and the data line 130. Each of the sub pixels SP1 and SP2 includes a driving transistor (not shown), a first transistor (not shown), a second transistor (not shown), a storage capacitor (not shown), and one organic light emitting element ).

On the other hand, the driving transistor (not shown) includes a gate electrode, an active layer, a source electrode, and a drain electrode. In detail, a driving transistor (not shown) is connected to a gate electrode (not shown) which is branched from the gate line 110 or disposed on the same layer as the gate line 110 and made of the same material, And a drain electrode disposed on the same layer as the data line 130 and made of the same material.

A power supply line 120 intersecting the gate line 110 and parallel to the data line 130 may be disposed on the substrate 100 of the display device. The electrode layers 140 and 150 are disposed on the source electrode and the drain electrode. In this case, the electrode layers 140 and 150 may be disposed to be in contact with the upper surfaces of the power source line 120, the data line 130, the source electrode, and the drain electrode. Here, the electrode layer 140 may be a first electrode 140 of an organic light emitting device (not shown).

Although the electrode layers 140 and 150 are disposed on the power source line 120, the data line 130, the source electrode, and the drain electrode in FIG. 2, the present embodiment is not limited thereto. Is arranged on at least the drain electrode.

This configuration will be described in detail with reference to FIG. 3 as follows. 3 is a cross-sectional view taken along the line A-B of the display device according to the first embodiment.

Referring to FIG. 3, the organic light emitting diode display according to the first embodiment includes a thin film transistor Tr disposed on a substrate 100. In detail, the buffer layer 101 is disposed on the substrate 100. [ An active layer 103 is disposed on the buffer layer 101. A first insulating layer 104 is disposed on the active layer 103.

Here, the first insulating layer 104 may be a gate insulating film. 3, the first insulating layer 104 is disposed so as to overlap the channel region of the active layer 103. However, the first embodiment is not limited to this, It is possible.

A gate electrode 105 is disposed on the first insulating layer 104. A second insulating layer 106 is disposed on the gate electrode 105. Here, the second insulating layer 106 may be made of a nonconductive material. Here, the nonconductive material may be any one of materials constituting a fluorine-based polymer or a deoxyribonucleic acid (DNA).

For example, the nonconductive material may include an amorphous fluoropolymer or guanine. Here, the amorphous fluoropolymer may be a substance represented by the following formula (1), but is not limited thereto.

In Formula 1, n is an integer of 1 or more.

The second insulating layer 106 is formed of the nonconductive material as described above to protect the gate electrode 105 and to prevent the stepped portion 105 generated by the active layer 103, the gate insulating film 104, Can be mitigated.

That is, the substrate 100 can be flattened through the second insulating layer 106. Accordingly, the substrate 100 can be planarized with only the second insulating layer 106 without separately providing a planarization layer or an overcoat layer on the substrate 100. [

A source electrode 131 and a drain electrode 132 of the thin film transistor Tr are disposed on the second insulating layer 106. The source electrode 131 and the drain electrode 132 may be connected to the active layer 103 through a contact hole formed in the second insulating layer 106.

The source electrode 131 and the drain electrode 132 may be made of copper (Cu), molybdenum (Mo), aluminum (Al), silver (Ag), titanium (Ti) In addition, although the source electrode 131 and the drain electrode 132 are formed as a single layer in FIG. 3, they may be multi-layered.

The electrode layers 140 and 150 may be disposed on the source electrode 131 and the drain electrode 132. At this time, the electrode layers 140 and 150 may be made of a transparent conductive material. For example, any one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO). When the display device to which the first embodiment is applied is an organic light emitting display, the bank patterns 160 may be disposed on a part of the upper surface of the electrode layers 140 and 150. The bank patterns 160 may be disposed so as to be in contact with the electrode layers 140 and 150 and a part of the upper surface of the second insulating layer 106. [

In this case, the electrode layer 140 disposed on the drain electrode 132 may be the first electrode of the organic light emitting device. Although not shown in the drawing, the organic light emitting layer and the second electrode of the organic light emitting device may be disposed on the electrode layer 150. Here, in the display device according to the first embodiment, the first electrode 150 of the organic light emitting diode may be disposed so as to surround the drain electrode 132.

When the display device according to the first embodiment is a liquid crystal display device, the structure may be such that the drain electrode 132 of the thin film transistor Tr and the pixel electrode 150 are in contact with each other.

As described above, at least a double-layered electrode may be disposed on the second insulating layer 106. [ In other words, one or more drain electrodes 132 and one or more electrode layers 150 may be disposed on the second insulating layer 106. At least one layer of the source electrode 131 and at least one layer of the electrode 104 may be disposed, but it is sufficient that at least the double layer electrode is disposed on the basis of the drain electrode 132 and the electrode layer 150.

When the electrode layers 140 and 150 are made of a transparent conductive material, the second electrode (not shown) of the organic light emitting device may be formed of a reflective material. The organic light emitting display device having the above- bottom emission type organic light emitting display. That is, light emitted from the organic light emitting device can be emitted toward the substrate 100.

Also, the present embodiment is not limited to this, and the electrode layers 140 and 150 may be formed of a reflective material or may have a multi-layer structure including a reflective material. For example, a reflective layer may be further disposed under the electrode layers 140 and 150. [ In this case, the organic light emitting display device to which the present embodiment is applied may be an organic light emitting display device of a top emission type. That is, the light emitted from the organic light emitting device can be emitted in the direction opposite to the substrate 100.

3, the electrode layers 140 and 150 are arranged so as to surround the source electrode 131 and the drain electrode 132. However, the display device according to the first embodiment is not limited to this, 140, and 150 may be disposed so that both ends of the source electrode 131 and the drain electrode 132 coincide with each other. In this case, since the source electrode 131, the drain electrode 132, and the electrode layers 140 and 150 can be etched in a batch, the process can be simplified.

As described above, in the display device according to the first embodiment, the second insulating layer 106 is made of a nonconductive material, and the electrode layer 150 and the bank pattern 160 are disposed on the drain electrode 132, So that it is possible to simplify the process.

The configuration and effects of the display device according to the first embodiment will be described below in comparison with the display device according to the comparative example. 4 is a plan view showing a part of a display device according to a comparative example. 5 is a cross-sectional view of the display device according to the comparative example taken along line C-D.

Meanwhile, the display device according to the comparative example may include the same components as the display device according to the first embodiment. The description overlapping with the first embodiment described above can be omitted. The same components have the same reference numerals.

4 and 5, a plurality of gate lines 110 and data lines 135 may intersect on a substrate 100, and a power supply line 121 may be disposed in parallel to the data lines 135 . A thin film transistor including an active layer 103, a gate electrode 105, a source electrode 131, and a drain electrode 132 may be disposed on the substrate 100.

More specifically, the gate electrode 105, which is branched from the gate line 110 or made of the same material as the gate line 110 in the same layer, the active layer 103 disposed under the gate electrode 105, the data line 135, And a drain electrode 132 disposed on the same layer as the source electrode 131 and the source electrode 131 branched from the source electrode 131 and made of the same material.

And an electrode layer 133 disposed so as to overlap with the source electrode 131 and the drain electrode 132. Here, the electrode layer 133 may be connected to the drain electrode 132 through a contact hole formed in one or more insulating layers 108 and 109.

Specifically, the interlayer insulating film 107 is disposed on the gate electrode 105 disposed on the gate insulating film 103. [ Here, the interlayer insulating film 107 may be formed along the step generated by the active layer 103, the gate insulating film 104, the gate electrode 105, and the like.

A source electrode 131 and a drain electrode 132 are disposed on the interlayer insulating film 107. A protective layer 108 is disposed on the source electrode 131 and the drain electrode 132. Here, the protective layer 108 may also be formed along the stepped portion generated by the source electrode 131 and the drain electrode 132.

On the other hand, when the electrode layer 133 is disposed on the non-flat surface, a region corresponding to the region where the stepped portion is formed can be visually recognized as a spot on the viewer. Accordingly, the overcoat layer 109 is disposed on the protective layer 108 to alleviate the stepped portion generated by the elements disposed on the substrate 100. [ The electrode layer 133 is disposed on the overcoat layer 109. In this case, the electrode layer 133 may be the first electrode of the organic light emitting device. The electrode layer 133 may be connected to the drain electrode 132 through a contact hole formed in the protective layer 108 and the overcoat layer 109.

In the display device according to the first embodiment shown in FIGS. 2 and 3, the second insulating layer 106 is disposed on the gate electrode. However, the display device according to the comparative example shown in FIGS. The insulating layers 107, 108, and 109 are disposed. Therefore, in the display device according to the first embodiment, the second insulating layer 106 functions as a protective layer and an overcoat layer, and thus the display device according to the first embodiment can be made thinner than the display device according to the comparative example.

In the display device according to the first embodiment, the electrode layer 140 is disposed on the drain electrode 132, so that the drain electrode 132 and the electrode layer 140 can be formed as a single mask. However, in the display device according to the comparative example, a mask for forming the drain electrode 132 and a mask for forming the electrode layer 133 are required, respectively, so that a mask process is required more than the display device according to the first embodiment. That is, in the display device according to the first embodiment, the electrode layer 140 is disposed on the drain electrode 132, thereby simplifying the process.

Next, a display device according to the second embodiment will be described with reference to FIGS. 6 and 7. FIG. 6 is a plan view showing a part of a display device according to the second embodiment. 7 is a sectional view taken along the line E-F of the display device according to the second embodiment.

The display device according to the second embodiment may include the same constituent elements as the above-described embodiments. The description overlapping with the embodiment described above can be omitted. The same components have the same reference numerals.

6, a gate line 110 and a data line 230 are disposed in an alternating manner on a substrate 100 of a display device according to the second embodiment, and a power line 220 May be disposed. The source electrode 131 and the electrode layer 240 are disposed on the drain electrode.

In Fig. 7, the electrode layer 240 is disposed on the source electrode 231 and the drain electrode 232. Fig. At this time, the electrode layer 240 may be disposed so as to surround the source electrode 231 and the drain electrode 232. In addition, the electrode layer 240 may be disposed so as to extend from a region overlapping with the drain electrode 232 in a cross-sectional view.

That is, the electrode layer 240 is disposed on the drain electrode 232 in the non-emission region NEA defined by the bank pattern 160. [ In the light emitting region EA, the electrode layer 240 is disposed on the second insulating layer 106. In addition, although not shown in the figure, the organic light emitting layer and the second electrode of the organic light emitting device may be disposed on the electrode layer 240.

When the organic light emitting display device is an organic light emitting layer of a lower emission type, that is, when the electrode layer 240 does not include a reflective layer, light emitted from the organic light emitting layer passes through the electrode layer 240, the second insulating layer 106, And can be output to the outside through the substrate 100.

On the other hand, when the electrode layer 240 is disposed on the drain electrode 232 in the light emitting region EA, light emitted from the organic light emitting layer passes through the electrode layer 240, the drain electrode 232, the second insulating layer 106, Passes through the substrate 100 and is output to the outside. At this time, since the light emitted from the organic light emitting layer is absorbed by the drain electrode 232 made of a metal material, the amount of light finally emitted to the outside of the display device can be reduced.

That is, since the light emitted from the organic light emitting element is not absorbed by the drain electrode 232 and is emitted to the outside of the substrate 100 by being disposed on the drain electrode 232 only in the non-emission region NEA, It can be emitted.

The display device according to the second embodiment is not limited to this, and may be configured as shown in FIG. 8 is a cross-sectional view showing a part of a display device according to another embodiment.

Referring to FIG. 8, in the display device according to another embodiment, the wavelength conversion layer 400 is formed on the second insulating layer 106 in the light emitting area EA of the display device according to the second embodiment, And the electrode layer 240 is disposed on the wavelength conversion layer 400. The structure of FIG.

Here, the electrode layer 240 may be made of a transparent conductive material, thereby realizing an organic light emitting display of a bottom emission type. In addition, the wavelength conversion layer 400 may be formed of a thin inorganic insulating material. For example, the wavelength conversion layer 400 may be formed of SiO2, SiNx, TiOx, Y2O3, or the like.

The thickness of the wavelength conversion layer 400 may be different for each sub-pixel emitting light of different colors. In this case, the wavelength conversion layer 400 may be formed in a range of 700 A to 1300 A.

In detail, the thickness of the wavelength conversion layer 400 in the sub pixel emitting red (R) light may be thicker than the thickness of the wavelength conversion layer 400 in the sub pixel emitting green (G) light. The thickness of the wavelength conversion layer 400 in the sub pixel emitting green (G) light may be thicker than the thickness of the wavelength conversion layer 400 in the sub pixel emitting blue (B) light.

On the other hand, the wavelength conversion layer 400 made of an inorganic insulating material can absorb light in a specific wavelength range depending on its thickness. That is, as the thickness of the wavelength conversion layer 400 is increased, the light of a lower wavelength range is absorbed, and as the thickness of the wavelength conversion layer 400 is decreased, the light of a higher wavelength range can be absorbed. That is, since the thickness of the wavelength conversion layer 400 is different in each luminescent region EA, the wavelength of the light emitted from the organic luminescent layer can be converted and output to the outside of the display device.

Here, when the display device according to another embodiment includes a sub-pixel that emits white light, the sub-pixel that emits white light may not include the wavelength conversion layer 400. That is, in the light emitting region EA of the sub-pixel emitting red (R), green (G) and blue (B) light, the wavelength conversion layer 400 is disposed on the second insulating layer 106, An electrode layer 240 is disposed on layer 400. The electrode layer 240 may be disposed on the second insulating layer 106 in the light emitting region EA of the sub pixel emitting white light.

On the other hand, the embodiment of the display device to which the wavelength conversion layer 400 is applied is not limited to this, and may be as shown in FIG. 9 is a cross-sectional view showing a part of a display device according to another embodiment.

Referring to FIG. 9, in a display device according to another embodiment, a first electrode layer 341 is disposed on a second insulating layer 106 in a light emitting region EA of a display device according to an embodiment illustrated in FIG. The wavelength conversion layer 400 is disposed on the first electrode layer 341 and the second electrode layer 340 is disposed on the wavelength conversion layer 400.

In this case, the first electrode layer 341 and the second electrode layer 340 may be formed of a reflective material or a transparent conductive material. Accordingly, the present invention can be applied to both the bottom emission type and the constant emission type organic light emitting display. Here, when the first electrode layer 341 and the second electrode layer 340 are made of a reflective material, the thicknesses of the first electrode layer 341 and the second electrode layer 340 may be 10 A to 500 A. If the thickness of the first electrode layer 341 and the second electrode layer 340 is less than 10 A, the first electrode layer 341 and the second electrode layer 340 may be difficult to manufacture. If the thickness of the first electrode layer 341 and the second electrode layer 340 is 500 A The light is reflected by the second electrode layer 340 and light emitted from the organic light emitting layer can be reflected without reaching the wavelength conversion layer 400.

Next, a display device according to the third embodiment will be described with reference to FIGS. 10 and 11. FIG. 10 is a plan view showing a part of a display device according to the third embodiment. 11 is a cross-sectional view taken along the line H-G of the display device according to the third embodiment.

The display device according to the third embodiment may include the same components as those of the above-described embodiments. The description overlapping with the embodiment described above can be omitted. The same components have the same reference numerals.

10 and 11, in the display device according to the third embodiment, the color layer 350 is disposed on the drain electrode 132 in the light emitting region EA of the display device shown in FIG. 3, The structure in which the electrode layer 140 is disposed on the layer 350 differs. That is, the structure in which the color layer 350 is disposed between the drain electrode 132 and the electrode layer 140 is different.

Here, the color layer 350 disposed in a sub-pixel that emits red (R) light may be a color layer 350 that absorbs a wavelength except for a red wavelength region, and may be a sub-pixel that emits green (G) The color layer 350 to be disposed may be a color layer 350 that absorbs a wavelength except for the green wavelength region and the color layer 350 disposed in the sub pixel that emits blue (B) And may be a color layer 350 that absorbs wavelengths.

Through the color layer 350, the wavelength of the light emitted from the organic light emitting layer in the light emitting region EA emitting different colors can be converted and output to the outside of the display device.

Meanwhile, when the electrode layer 140 is made of a transparent conductive material, the display device according to the third embodiment may be an organic light emitting display device of a bottom emission type. Although not shown in the drawing, when the drain electrode 132 and the reflective layer are further disposed on the color layer, an organic light emitting display of the top emission type can be realized.

As described above, in the display device according to the present embodiment, since the insulating film disposed on the gate electrode is made of a nonconductive material, the gate electrode is protected and the step generated due to the active layer, the gate insulating film, and the gate electrode is alleviated There is an effect that can be. Therefore, the structure of the interlayer insulating film for protecting the thin film transistor and the structure of the overcoat layer for flattening the substrate can be eliminated, so that the process can be simplified and the thickness of the panel can be reduced.

Further, by making the substrate flat by the insulating film disposed on the gate electrode, the pixel electrode or the first electrode of the organic light emitting element can be disposed on the drain electrode. Therefore, since the drain electrode and the pixel electrode or the first electrode can be formed in the same process, a mask reduction effect compared to the conventional structure can be expected.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented.

103: first insulating layer
105: gate electrode
106: second insulating layer
131: source electrode
132: drain electrode
140: electrode layer

Claims (20)

A substrate divided into a plurality of sub-pixels including a light emitting region and a non-light emitting region;
An active layer disposed on the substrate;
A first insulating layer disposed on the active layer;
A gate electrode disposed on the first insulating layer;
A second insulating layer formed on the gate electrode and made of a nonconductive material;
A source electrode and a drain electrode disposed on the second insulating layer and connected to the active layer;
An electrode layer disposed on the source electrode and the drain electrode; And
And a bank pattern disposed so as to be in contact with a part of the upper surface of the electrode layer and the second insulating layer.
The method according to claim 1,
Wherein the nonconductive material is one of a fluorine-based polymer and a material constituting a deoxyribonucleic acid (DNA).
The method according to claim 1,
Wherein the electrode layer is made of a reflective material or a transparent conductive material.
The method according to claim 1,
And a second insulating layer, a drain electrode, and an electrode layer are sequentially arranged in the light emitting region.
The method according to claim 1,
And a second insulating layer and an electrode layer are sequentially arranged in the light emitting region.
The method according to claim 1,
And a second insulating layer, a wavelength conversion layer, and an electrode layer are sequentially arranged in the light emitting region.
The method according to claim 1,
And a second insulating layer, a first electrode layer, a wavelength conversion layer, and a second electrode layer are sequentially arranged in the light emitting region.
8. The method according to claim 6 or 7,
Wherein the wavelength conversion layer is made of an inorganic insulating material.
9. The method of claim 8,
Wherein the thickness of the wavelength conversion layer is different from that of the light emitting region emitting light of different colors.
The method according to claim 1,
And a second insulating layer, a drain electrode, a color layer, and an electrode layer are sequentially arranged in the light emitting region.
A substrate divided into a plurality of sub-pixels including a light emitting region and a non-light emitting region;
A thin film transistor arranged on the substrate and including an active layer, a first insulating layer, a gate electrode, a second insulating layer made of a nonconductive material, and a source electrode and a drain electrode;
A first electrode disposed on the source electrode and the drain electrode;
A bank pattern disposed so as to be in contact with a part of the upper surface of the first electrode and the second insulating layer;
An organic light emitting layer disposed on the first electrode; And
And a second electrode disposed on the organic light emitting layer.
12. The method of claim 11,
Wherein the nonconductive material is one of a fluorine-based polymer and a material constituting a deoxyribonucleic acid (DNA).
12. The method of claim 11,
Wherein the electrode layer is made of a reflective material or a transparent conductive material.
12. The method of claim 11,
And a second insulating layer, a drain electrode, and an electrode layer are sequentially arranged in the light emitting region.
12. The method of claim 11,
And a second insulating layer and an electrode layer are sequentially arranged in the light emitting region.
12. The method of claim 11,
And a second insulating layer, a wavelength conversion layer, and an electrode layer in the light emitting region.
12. The method of claim 11,
And a second insulating layer, a first electrode layer, a wavelength conversion layer, and a second electrode layer in the light emitting region.
18. The method according to claim 16 or 17,
Wherein the wavelength conversion layer is made of an inorganic insulating material.
19. The method of claim 18,
Wherein the thickness of the wavelength conversion layer is different from that of the light emitting region emitting light of different colors.
12. The method of claim 11,
And a second insulating layer, a drain electrode, a color layer, and an electrode layer are sequentially arranged in the light emitting region.

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