KR20170059510A - Apparatus for Deposition of Thin Film and Method Using the Same - Google Patents

Abstract

According to an embodiment of the present invention, a thin-film deposition apparatus, which alternately arranges multiple material films onto a substrate, includes: a chamber having a processing space therein to generate plasma and process the substrate; a gas supply apparatus spraying the process gas into the chamber; a substrate support apparatus which has the substrate mounted on the upper part, is installed to face the gas supply apparatus, and includes a filter for filtering high frequency components inside the chamber; a plasma power supply unit including a first power supply unit and a second power supply unit; and a controller which selectively drives the first and second power supply units and provides a control signal to the filter. The first power supply unit is connected to at least one of the gas supply apparatus and the substrate support apparatus during a first insulation film deposition process to provide first high-frequency power with a center frequency band of 20 to 70 MHz. The second power supply unit is connected to at least one of the gas supply apparatus and the substrate support apparatus during a deposition process of a second insulation film having a different etching selection ratio than the first insulation film to provide second high-frequency power with a center frequency band of 10 to 20 MHz.

Description

[0001] Apparatus for Deposition of Thin Film and Method Using the Same [

The present invention relates to a thin film forming apparatus for a semiconductor device, and more particularly, to a thin film deposition apparatus and a deposition method.

A thin film for manufacturing a semiconductor device may be formed by a method such as vapor deposition, growth, or the like.

One of the thin film deposition methods is Chemical Vapor Deposition (CVD). CVD is a technique for forming a thin film by a gas phase reaction by flowing a raw material gas on a substrate and decomposing the raw material gas by applying external energy. As an advanced form of the CVD method, there is a plasma CVD method. The plasma CVD method is a method of decomposing a reaction gas to deposit a target material on a substrate, and it can be classified into a direct plasma method, a remote plasma method, and the like.

Various types of thin films can be deposited by the plasma CVD method. The film characteristics such as stress, surface uniformity, surface roughness, density and the like of the deposited thin film have a great influence on the yield and reliability of the resulting semiconductor device. It goes crazy.

At present, a plasma CVD apparatus uses a high frequency power source having a center frequency band of 13.56 MHz. However, when a high frequency power source of 13.56 MHz is used, the deposition rate is low, thereby lowering the uniformity of the deposited film, increasing the process time, and troublesome control of the temperature inside the chamber.

For example, a nitride film formed by a plasma CVD apparatus using a high frequency power of 13.56 MHz has a high compressive stress. As a result, problems such as cracks occur in the subsequent heat treatment process, or influence stress migration characteristics of the lower layer, particularly, the lower metal layer. Further, in order to discharge the hydrogen ions (H ⁺ ) bonded to the nitride film, a high temperature annealing process must be followed, and the film quality of the nitride film may be changed in this process.

Further, in the case of an oxide film formed by a plasma CVD apparatus using a high frequency power of 13.56 MHz, there is a problem that stress characteristics are changed by applied heat. The oxide film is usually used as an interlayer insulating film or an intermetallic insulating film. If the thickness of the oxide film is not uniformly formed, a leakage current is generated and the operation performance of the semiconductor device is lowered.

Recently, a technique for manufacturing a semiconductor device in three dimensions has been actively studied as one of methods for achieving high integration of the semiconductor device. In order to ensure uniform operation characteristics and reliability of such a semiconductor device, it is required to deposit a thin film having a uniform thickness on a substrate in multiple layers.

Embodiments of the present invention can provide a thin film deposition apparatus and a deposition method capable of uniformly forming the thickness of a thin film as a whole in each layer in alternately depositing a plurality of thin films having different etching selection ratios.

A thin film deposition apparatus according to an embodiment of the present invention is a thin film deposition apparatus for depositing a plurality of material films on a substrate alternately, comprising: a chamber in which a processing space for processing the substrate is formed by generating plasma therein; A gas supply device for injecting a process gas into the chamber; A substrate supporting device installed so as to face the gas supply device and on which the substrate is mounted, and a filter for filtering high frequency components inside the chamber; A first power supply part connected to at least one of the gas supply device and the substrate support device during the first insulation film deposition step to provide a first high frequency power having a center frequency of 20 to 70 MHz, And a second power supply part connected to at least one of the gas supply device and the substrate supporting device to provide a second high frequency power having a center frequency of 10 to 20 MHz during a second insulation film deposition process in which the ratio is different. And a controller configured to selectively drive the first power supply and the second power supply, and to provide a control signal to the filter.

The thin film deposition method according to an embodiment of the present invention includes a first power supply unit configured to provide a first high frequency power having a center frequency band of 20 to 70 MHz and a second power supply unit configured to provide a second high frequency power having a center frequency band of 10 to 20 MHz And a filter for varying the impedance of the chamber by filtering the first or second high frequency component, wherein the first insulating film and the second insulating film have different etching selection ratios, Forming a first insulating film on the semiconductor substrate by supplying the first high frequency power and controlling the filter by a first control signal; And supplying the second high frequency power and controlling the filter by a second control signal to form the second insulating film on the first insulating film in the form of an inductor.

According to this technique, when alternately depositing a plurality of thin films having different etching selection ratios, the thickness of the thin film can be formed uniformly throughout each layer. Further, the thin film can be deposited according to the kind of the material film to be deposited, or the desired hardness according to the position of the deposited material film.

1 is a configuration diagram of a thin film deposition apparatus according to an embodiment.
2 is a structural view of a thin film deposition apparatus according to an embodiment.
3 is a view illustrating a high-frequency plasma sheath and an RF plasma sheath according to an embodiment.
4 is a configuration diagram of a filter according to an embodiment.
5 is a configuration diagram of a filter unit according to an embodiment.
6 is a configuration diagram of a filter unit according to an embodiment.
7 and 8 are cross-sectional views of a device for explaining a thin film deposition method according to an embodiment.

Hereinafter, embodiments of the present technology will be described in more detail with reference to the accompanying drawings.

1 is a configuration diagram of a thin film deposition apparatus according to an embodiment.

1, a thin film deposition apparatus 10 according to one embodiment includes a controller 100, a chamber 110 having a first electrode 120 and a second electrode 130, a plasma power supply 140, A matching network 150, and a filter 160.

The controller 100 is configured to control the overall operation of the thin film deposition apparatus 10. In one embodiment, the controller 100 controls the operation of each of the components 110 to 160, and can set control parameters and the like for the thin film deposition process. Although not shown, the controller 100 may include a central processing unit, a memory, an input / output interface, and the like. In particular, in one embodiment, the controller 100 controls the plasma power supply 140 and the matching network 150 according to the type of material film deposited within the chamber 110. Further, the controller 100 controls the filter 160 according to the type of the material film deposited in the chamber 110 and the position of the deposition material so that the impedance in the chamber 110 can be varied.

The chamber 110 provides an environment in which a thin film made of a desired material can be formed on a substrate by a plasma CVD method while the substrate is held in the chamber.

In the chamber 110, the first electrode 120 and the second electrode 130 may be opposed to each other.

The plasma power supply 140 may include a first power supply 141 and a second power supply 143. The first power supply unit 141 may be configured to provide a VHF (Very High Frequency) power source (first high frequency power source) having a center frequency band of 20 to 70 MHz as a plasma power source. The second power supply 143 may be configured to provide a RF power source (second RF power source) having a center frequency band of 10 to 20 MHz as a plasma power source. The controller 100 may selectively turn on / off the first power supply unit 141 or the second power supply unit 143 according to a predetermined deposition control parameter. The first power supply 141 and the second power supply 143 may be selectively driven based on the type of the thin film to be deposited.

In one embodiment, the plasma power supply 140 may be connected to a gas supply as the first electrode 120 to provide a plasma power source. In this case, the second electrode 130 may be a susceptor having a mounting portion on which the substrate is mounted, and may be connected to a ground terminal. In another embodiment, the plasma power supply 140 may be connected to the susceptor as the second electrode 130 to provide a plasma power source. In this case, the first electrode 120 may be a gas supply device.

For example, after the substrate is placed on the susceptor as the second electrode 130 and the inside of the chamber 110 is evacuated, the process gas is injected and the first and second power sources A plasma 170 may be formed between the first electrode 120 and the second electrode 130 by selectively driving the supply units 141 and 143 to apply a VHF or RF high frequency power to the first electrode 120. [ have.

The matching network 150 may be configured to match the output impedance of the plasma power supply 140 and the load impedance in the chamber 110 to eliminate return loss as the high frequency power is reflected from the chamber 110. The matching network 150 includes a first matching unit 151 connected between the first power supply unit 141 and the first electrode 120 and a second matching unit 151 connected between the second power supply unit 143 and the first electrode 120. [ 2 matching unit 153 as shown in FIG. Therefore, when the first power supply unit 141 is in the driving state, impedance matching is performed through the first matching unit 151. When the second power supply unit 143 is in the driving state, the impedance matching is performed through the second matching unit 153 Impedance matching is performed.

The filter 160 filters the high frequency power transmitted through the second electrode 130 when the high frequency power is applied to the first electrode 120 through the plasma power supply unit 140 so that the high frequency power is not radiated to the outside . In addition, the filter 160 can be configured to vary the capacitance, thereby changing the impedance in the chamber 110. The filter 160 may be configured to include a single filter portion whose capacitance can be varied or may be configured to include a plurality of filter portions corresponding to the first and second power supplies 141 and 143, have.

In one embodiment, the filter 160 may be configured such that the impedance is varied according to a control signal preset via the controller 100 at the beginning of the thin film deposition process, or the impedance is varied in real time according to the control signal provided by the controller 100 during the process. Can be varied. In one embodiment, the filter 160 is controlled to have a fixed impedance when the second power supply 143 is in the driving state, and the impedance can be controlled to vary when the first power supply 141 is in the driving state . In another embodiment, the filter 160 may be controlled to have different impedances when the second power supply 143 is in the driving state and when the first power supply 141 is in the driving state. In yet another embodiment, the filter 160 can be controlled to have different impedances depending on the type of film being deposited and / or the deposition location.

The first power supply unit 141 of the thin film deposition apparatus 10 according to the present invention uses a first high frequency power source having a center frequency band of VHF, preferably 27.12 MHz, with a center frequency band of 20 to 70 MHz as a plasma power source . In addition, the second power supply unit 141 uses a second high frequency power source having a center frequency band of RF of 10 to 20 MHz, preferably 13.56 MHz as a plasma power source. Accordingly, the first RF power supply or the second RF power supply can be selectively applied according to the type of the thin film to be deposited.

The impedance of the chamber 110 can be varied according to the kind of the thin film to be deposited and / or the stacking position by controlling the filter 160 to have a variable impedance in addition to filtering the high frequency.

In one embodiment, the thin film deposition apparatus 10 is a device for forming a multilayer thin film by alternately depositing a first insulating film and a second insulating film having an etching selectivity different from that of the first insulating film in an in-situ manner have.

Illustratively, the first insulating film may be a silicon nitride film, and the second insulating film may be a silicon oxide film. At this time, the silicon nitride film can be formed using SiH ₄ and NH ₃ as the process gas, and the silicon oxide film can be formed using TEOS and O ₂ as the process gas.

As another example, the first insulating film may be a polysilicon film, and the second insulating film may be a silicon oxide film. At this time, the polysilicon film can be formed using Si and SiH ₄ as the process gas, and the silicon oxide film can be formed using SiH ₄ and N ₂ O as the process gas.

As another example, the first insulating film may be a silicon nitride film or a polysilicon film, and the second insulating film may be a silicon oxide film based on TEOS or a silicon oxide film based on SiH ₄ .

In the present technology, when depositing the first insulating film, a first high frequency power having a center frequency band of VHF having a center frequency band of 20 to 70 MHz, preferably 27.12 MHz, is supplied to the plasma power source through the first power supply unit 151 do. In addition, when depositing the second insulating film, a second RF power source having a center frequency of 10 MHz to 20 MHz and preferably a center frequency of 13.56 MHz is supplied to the plasma power source through the second power supply unit 153.

When the frequency of the plasma power source is raised to 20 to 70 MHz, plasma ions are generated using a frequency power source higher than the RF frequency, so that the plasma ion flux is increased while ion energy and ion bombardment are increased. Is reduced.

Since the ion energy is reduced, the hydrogen generated in the deposition process also has a low ion energy, so that the reaction with other reactors is easy, so that the stable state can be maintained or volatilized. Further, since the ion collision ratio is reduced by using a high frequency power source of 20 to 70 MHz, the occurrence of incidental hydrogen radicals due to ion collision can be fundamentally prevented. As a result, the problem of residual hydrogen can be solved without affecting the film quality. Therefore, it is not necessary to carry out a high-temperature post-treatment process to remove hydrogen ions, and it is possible to prevent the phenomenon of film quality by the high-temperature annealing process.

Further, when a high-frequency power source is applied for plasma generation, the reactance component of the impedance is reduced as shown in the following equation, and the plasma loss is reduced, so that the deposition rate can be improved.

<Expression>

Further, in the case of using the first high frequency power source of VHF, as shown in FIG. 3, it can be seen that the edge portion of the plasma sheath is generated at a position lower than the center, as compared with the case of using the RF power source. That is, the plasma sheath layer is generated closer to the substrate than the center. Thus, even if the plasma gas is concentrated at the center of the substrate, the plasma gas is generated closer to the substrate at the edge portion of the substrate.

It is known that the nitride film or the polysilicon film is more affected by the plasma sheath than the oxide film. Therefore, when a VHF plasma power source is used for forming the first insulating film, that is, the nitride film or the polysilicon film, as in the present invention, the first insulating film having a uniform thickness from the center portion of the substrate to the edge portion can be formed.

On the other hand, when a plurality of material films having different etching selection ratios are alternately laminated, the hardness (tearing) of each laminated film can be an important parameter according to the subsequent process.

The hardness of the deposited material film can be represented by WET (Wet Etch Rate), which can be achieved by controlling the impedance of the filter 160.

In detail, when a filter 160 having, for example, a variable capacitor is installed in the plasma chamber 110, a voltage applied to the plasma device as a whole is divided into a plasma chamber voltage and a filter voltage.

<Expression>

V _plasma = V _ch + V _filter (V _plasma , V _ch : chamber voltage, V _filter : filter voltage)

As the filter 160 having the variable capacitor is connected to the chamber 110, a part of the applied voltage to be supplied to the plasma chamber 110 is divided into the filter 160. Therefore, the magnitude of the voltage applied to the plasma chamber 110 becomes substantially lower than when the filter 160 is not provided. Particularly, when the capacity of the variable capacitor in the filter 160 is increased, the power voltage applied to the plasma chamber is further reduced.

When the voltage applied to the plasma chamber 110 is reduced in this way, the ion bombardment is also reduced in proportion thereto. As a result, the hardness of the material film formed in the plasma chamber 110 is lowered. A detailed experimental example is described in the article "Influence of ion bombardment on structure and properties of unbalanced magnetron grown CrNx coatings" proposed by T. Hurkmans et al.

Accordingly, the material films having different hardness can be deposited by changing the capacitances of the variable capacitors constituting the filter 160.

For example, since the first insulating layer including nitride or polysilicon has a lower etching selectivity than that of the oxide layer, the variable capacitor of the filter 160 has a low capacitance or a low capacitance so as to have a relatively low hardness, 0.0 &gt; 0 &lt; / RTI &gt; On the other hand, since the second insulating film containing oxide has a higher etching selectivity than the nitride film or the polysilicon film, the second insulating film has a relatively high hardness, that is, Thereby increasing the capacitance.

On the other hand, a step of alternately laminating a plurality of thin films having different etching selection ratios and subsequently forming contact holes in the laminated film can be exemplified. In this case, the thin film positioned at the lower side based on the stacking direction of each material film is less affected by the etching gas than the thin film located at the upper side. Therefore, even if the same material film is used, the etching rate of the thin film located below the thin film located at the upper side is lowered.

Therefore, when a plurality of thin films having different etching selection ratios are alternately deposited, the thin film positioned at the bottom in the stacking direction and the thin film positioned at the top need to have different hardness even in the same material film. Therefore, it is possible to prepare for the subsequent etching process by controlling the hardness of the thin film to be laminated on the lower side and the thin film to be laminated on the upper side.

In this way, when a plurality of material films having different etch selectivities are alternately stacked, it is possible to control the path for each type of material film deposited through the filter 160 or adjust the hardness according to the stacking position of each material film.

2 is a structural view of a thin film deposition apparatus according to an embodiment.

The thin film deposition apparatus 20 includes a chamber 200, a controller 201, a gas supply apparatus 230, a substrate support apparatus 240, a driving unit 250, a plasma power supply unit 260, a matching network 270, A heater power supply unit 280, and a heater power supply unit 290.

The chamber 200 may include a main body 210 having an open upper part and a top lead 220 installed at an upper end periphery of the main body 210. The inner space of the top lead 220 can be closed by the gas supply device 230. An insulation ring r is provided between the gas supply device 230 and the top lead 220 so that the chamber 200 and the gas supply device 230 are electrically insulated from each other.

The space inside the chamber 200 may be a space for processing the substrate W such as a deposition process. At a designated position on the side of the main body 210, a gate G may be provided in which the substrate W is carried in and out. A through hole through which the support shaft 244 of the substrate supporting apparatus 240 is inserted may be formed on the bottom surface of the main body 210. Since the inside of the chamber 200 is generally formed in a vacuum atmosphere, an exhaust port 212 for discharging gas existing in the internal space of the chamber 200 may be formed at a designated position of the main body 210, for example, have. The exhaust port 212 may be connected to an external pump 213.

The gas supply device 230 may be installed inside the top lead 220 so as to face the substrate supporting device 240. The gas supply unit 230 may supply various process gases supplied from the outside through the gas line 232 and inject the gas into the chamber 200. The gas supply device 230 may be selected from various types of gas supply devices such as a shower head type, an injector type, and a nozzle type. In one embodiment, gas supply 230 may act as a first electrode.

The substrate support apparatus 240 may include a substrate seating portion (susceptor) 242 and a support shaft 244. The substrate seating part 242 has a generally flat shape so that at least one substrate W is seated on the upper surface thereof and may be installed in the chamber 200 in a horizontal direction with respect to the top lead 220. The supporting shaft 244 is vertically coupled to the rear surface of the substrate seating part 242 and connected to the external driving part 250 through the through hole at the bottom of the chamber 200 to move the substrate seating part 242 up and down and / . &Lt; / RTI &gt; In one embodiment, the substrate seating 242 may act as a second electrode.

In addition, a heater 246 is provided inside the substrate seating part 242 to control the temperature of the substrate W placed on the upper part.

The controller 201 is configured to control the overall operation of the thin film deposition apparatus 20. In one embodiment, the controller 201 controls the operation of each of the components 200 to 290, and can set control parameters and the like for a thin film deposition process. Although not shown, the controller 201 may include a central processing unit, a memory, an input / output interface, and the like.

The plasma power supply unit 260 may include a first power supply unit 261 and a second power supply unit 263. The first power supply unit 261 may be configured to provide a VHF power source (first high frequency power source) having a center frequency band of 20 to 70 MHz as a plasma power source. The second power supply unit 263 may be configured to provide an RF (Radio Frequency) power source (a second high frequency power source) having a center frequency band of 10 to 20 MHz as a plasma power source. The controller 201 can selectively turn on / off the first power supply unit 261 or the second power supply unit 263 according to a predetermined deposition control parameter.

For example, the substrate W is mounted on the substrate mounting part 242 as a second electrode, and the chamber 200 is vacuumed. Then, the process gas is injected into the chamber 200, A plasma can be formed between the gas supply device 230 and the substrate seating portion 242 by applying the first high frequency power source or the second high frequency power to the gas supply device 230 as one electrode.

The matching network 270 may include a first matching unit 271 connected to the first power supply unit 261 and a second matching unit 273 connected to the second power supply unit 263. [ The first and second matching units 271 and 2873 of the matching network 270 match the output impedance of the first and second power supply units 261 and 263 with the load impedance of the chamber 200, And may be configured to eliminate return loss as it is reflected from the chamber 200.

The filter 280 filters the high frequency power transmitted through the substrate seating part 242 when the high frequency power is applied to the gas supply device 230 through the plasma power supply part 260 so that the high frequency power is not radiated to the outside . The filter 280 is configured to vary the capacitance according to the control of the controller 201. The capacitance of the filter 280 can be varied to vary the impedance in the chamber 200.

The heater power supply unit 290 may be configured to supply power to the heater 246 so that the heater 246 generates heat.

2 shows an example in which the exhaust port 212 is formed on the bottom of the chamber 200. However, the exhaust port 212 may be formed on the side surface of the chamber 200. [

In the thin film deposition apparatus 20 shown in FIG. 2, the plasma power supply unit 260 supplies a VHF power source of 20 to 70 MHz (a first high frequency power source Power source) or an RF power source (second high-frequency power source) of 10 to 20 MHz to the plasma power source. The filter 280 filters the high frequency power sources VHF and RF so as not to be radiated to the outside and the impedance is changed according to the control signal provided from the controller 201 to change the impedance in the chamber 200 .

In one embodiment, the impedance of the filter 280 may be preset prior to the deposition process, depending on the type of film being deposited, the location of the deposition, or the properties of the desired film. In another embodiment, the impedance of the filter 280 may change in real time during the deposition process.

4 is a configuration diagram of a filter according to an embodiment.

The filters 160 and 280 may be constituted by a single filter portion whose impedance can be varied or may be constituted by a plurality of filter portions corresponding to the types of plasma power sources supplied from the plasma power supply portions 140 and 260. When the filters 160 and 280 include a plurality of filter portions, the impedance of each filter portion may be fixed or variable.

FIG. 4 shows a case where the filter 30 includes the first filter unit 310 and the second filter unit 320, corresponding to the type of the plasma power source.

Referring to FIG. 4, the filter 30 includes a first filter unit 310 and a second filter unit 320. The first and second filter units 310 and 320 are selectively connected to the substrate seating unit (not shown) by the switching unit 330, which is switched in response to the control signals CON <0: 1> 242, respectively.

In one embodiment, the first and second filter portions 310 and 320 may be configured to have different impedances. In another embodiment, at least one of the first and second filter units 310 and 320 may be configured to include a variable capacitor.

5 is a configuration diagram of a filter unit according to an embodiment, and shows a filter unit including a variable capacitor.

Referring to FIG. 5, the filter unit 40-1 may include an inductor unit 411 and a capacitor unit 413.

The inductor unit 411 may include an inductor connected between the substrate seating connection terminal A and the connection terminal B of the heater power supply unit 290.

The capacitor unit 413 may be connected between the connection node of the inductor unit 411 and the heater power supply unit 290 and the ground terminal and may be constituted by a variable capacitor and the capacitance is adjusted by the controllers 100 and 201 .

6 is a configuration diagram of a filter unit according to an embodiment, and shows a filter unit including a variable capacitor.

Referring to FIG. 6, the filter 40-2 may include an inductor unit 411 and a capacitor unit 415.

The inductor unit 411 may include an inductor connected between the substrate seating connection terminal A and the connection terminal B of the heater power supply unit 290.

The capacitor unit 415 may be connected between the connection node of the inductor unit 411 and the heater power supply unit 290 and the ground terminal. The capacitor unit 415 may have a structure in which at least one capacitor C0 to Cn having a fixed capacitance is connected in parallel and each of the capacitors C0 to Cn is connected to a switch control Can be connected to the switching elements SW0 to SWn driven by the signal (SW < 0: n >). Therefore, on / off of the switching elements SW0 to SWn is determined by the switch control signal SW < 0: n >, and the capacitance of the capacitor section 415 can be determined accordingly.

The controllers 100 and 201 may generate control signals at the beginning of the process or during the process to set the capacitances of the filters 40-1 and 40-2 shown in FIG. 5 or 6. Since the capacitances of the filters 40-1 and 40-2 vary the impedance inside the chambers 110 and 200, the filters 40-1 and 40-2 are formed in consideration of the kind of the material film to be deposited, the stacking position, 40-2 may be determined.

7 and 8 are cross-sectional views of a device for explaining a thin film deposition method according to an embodiment.

Referring to FIG. 7, the first insulating films 510a, 510b, 510c, and 510d and the second insulating film (not shown) are formed on the semiconductor substrate 500 using the thin film deposition apparatuses 10 and 20 shown in FIG. 520a, 520b, and 520c are alternately stacked. The first insulating layers 510a, 510b, 510c, and 510d and the second insulating layers 520a, 520b, and 520c may be insulating layers having different etch selectivities. In one embodiment, the first insulating layers 510a, 510b, 510c, and 510d may be silicon nitride layers, and the second insulating layers 520a, 520b, and 520c may be silicon oxide layers. At this time, the silicon nitride film can be formed using SiH ₄ and NH ₃ as the process gas, and the silicon oxide film can be formed using TEOS and O ₂ as the process gas. As another example, the first insulating films 510a, 510b, 510c, and 510d may be polysilicon films, and the second insulating films 520a, 520b, and 520c may be silicon oxide films. At this time, the polysilicon film can be formed using Si and SiH ₄ as the process gas, and the silicon oxide film can be formed using SiH ₄ and N ₂ O as the process gas. As another example, the first insulating film (510a, 510b, 510c, 510d ) is a silicon nitride film or a poly may be any one of a silicon film, a second insulating film (520a, 520b, 520c) is a TEOS-based silicon oxide film, or SiH ₄ based Silicon oxide film.

Although FIG. 7 shows an example in which the first insulating films 510a, 510b, 510c and 510d are laminated in four layers and the second insulating films 520a, 520b and 520c are laminated in three layers, It is needless to say that several to ten layers may be alternately stacked.

The first power supply units 141 and 261 are driven by the controllers 100 and 201 to form the first insulating films 510a to 510d so that the central frequency band is 20 to 70 MHz, Preferably a 27.12 MHz VHF power supply (second high frequency power supply). The second power supply units 143 and 263 are driven by the controllers 100 and 201 to form the second insulating films 520a and 520b and 520c so that the center frequency band is 10 to 20 MHz, It is possible to supply an RF power source (second high frequency power source). Therefore, each of the laminated films can be formed with a uniform thickness from the central portion to the edge side.

When the first insulating layers 510a, 510b, 510c, and 510d and / or the second insulating layers 520a, 520b, and 520c are formed, the impedance of the chambers 110 and 200 may be varied by the filters 160 and 280, The hardness of the material film to be deposited can be changed.

For example, the capacitances of the filters 160 and 280 at the time of depositing the first insulating films 510a, 510b, 510c and 510d are different from the capacitances of the filters 160 and 280 at the time of depositing the second insulating films 520a, 520b and 520c Can be controlled.

The capacitances of the filters 160 and 280 can be controlled differently according to the stacking positions of the first insulating films 510a, 510b, 510c and 510d, and the capacitances of the filters 160 and 280 can be controlled differently depending on the deposition positions of the second insulating films 520a, 520b and 520c. The capacitances of the capacitors 160 and 280 can be controlled differently.

Accordingly, it can be controlled to have different film characteristics, particularly hardness, depending on the kind of the material film to be deposited and the position of the material film to be deposited.

Meanwhile, when argon (Ar) is used as an inert gas during the deposition of the first and second insulating films 510a, 520a, 510b, 520b, 510c, 520c and 510d or the deposition of the second insulating films 520a, 520b and 520c, It is possible to further improve the characteristics of the thin film.

Referring to FIG. 8, a predetermined portion of the first and second insulating films 510a, 520a, 510b, 520b, 510c, 520c and 510d is etched to form a contact hole H2.

As the hardness of the thin film is individually controlled depending on the kind of the material film and the position of lamination of the respective layers constituting the first and second insulating films 510a, 520a, 510b, 520b, 510c, 520c and 510d, ) Can have a uniform diameter at any position.

Thus, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

10, 20, 60, 70: Thin film deposition apparatus
200: chamber
210:
220: Top Lead
230: gas supply device
240: substrate holding device
250:
260: Plasma power supply
270: matching network
280: Filter
290: Heater power supply
r: Insulation ring

Claims (14)

1. A thin film deposition apparatus for alternately depositing a plurality of material films on a substrate,
A chamber in which a processing space for processing the substrate is formed by generating a plasma therein;
A gas supply device for injecting a process gas into the chamber;
A substrate supporting device installed so as to face the gas supply device and on which the substrate is mounted, and a filter for filtering high frequency components inside the chamber;
A first power supply part connected to at least one of the gas supply device and the substrate support device during the first insulation film deposition step to provide a first high frequency power having a center frequency of 20 to 70 MHz, And a second power supply part connected to at least one of the gas supply device and the substrate supporting device to provide a second high frequency power having a center frequency of 10 to 20 MHz during a second insulation film deposition process in which the ratio is different. And
A controller configured to selectively drive the first power supply and the second power supply, and to provide a control signal to the filter;
The thin film deposition apparatus comprising: The method according to claim 1,
Wherein the first power supply unit is configured to provide the first high frequency power having a center frequency band of 27.12 MHz and the second power supply unit is configured to provide the second high frequency power having a center frequency band of 13.56 MHz, . The method according to claim 1,
Wherein the filter is driven corresponding to the first power supply unit and the second power supply unit and includes a variable capacitor. The method of claim 3,
Wherein the filter unit is configured to include a variable capacitor whose capacitance is determined in a motor driving manner in response to the control signal. The method of claim 3,
The filter unit may include: a plurality of capacitors each having a predetermined fixed capacitance; And
A switch element connected to the capacitor and being turned on / off under the control of the controller;
The thin film deposition apparatus comprising: The method according to claim 1,
The filter includes: a first filter unit driven corresponding to the first power supply unit; And
A second filter unit driven corresponding to the second power supply unit;
And a thin film deposition apparatus. The method according to claim 6,
Wherein at least one of the first filter portion and the second filter portion is configured to include a variable capacitor. The method according to claim 1,
A first matching unit connected between the gas supply unit and the first power supply unit, and a second matching unit connected between the gas supply unit and the second power supply unit, wherein the output impedance of the plasma power supply unit, And a matching network configured to match the impedance in the chamber. A first power supply configured to provide a first high frequency power having a center frequency of 20 to 70 MHz and a second power supply configured to provide a second high frequency power having a center frequency of 10 to 20 MHz, And a filter for filtering the first or second high frequency component and varying the impedance of the chamber, the thin film deposition apparatus alternately depositing the first insulating film and the second insulating film having different etching selection ratios ,
Supplying the first high frequency power and controlling the filter by a first control signal to form the first insulating film on the semiconductor substrate; And
Supplying the second high frequency power and controlling the filter by a second control signal to form the second insulating film on the first insulating film in the form of an inductor;
&Lt; / RTI &gt; 10. The method of claim 9,
Wherein the step of forming the first insulating film and the second insulating film is repeated at least once. 10. The method of claim 9,
Wherein the first insulating film is a nitride film and the second insulating film is an oxide film. 10. The method of claim 9,
Wherein the first insulating film is a polysilicon film and the second insulating film is an oxide film. 10. The method of claim 9,
Wherein the filter controls different impedances in the chamber in the first insulating film forming step and the second insulating film forming step. 10. The method of claim 9,
The first insulating film and the second insulating film are laminated repeatedly a plurality of times,
Wherein the filter controls the impedance in the chamber to be different from one another depending on a position where the first insulating film or the second insulating film is stacked.

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