KR102070791B1 - Apparatus for Deposition of Thin Film and Method Using the Same - Google Patents

Abstract

The thin film deposition apparatus according to the exemplary embodiment of the present invention is a thin film deposition apparatus for alternately depositing a plurality of material films on a substrate, and includes a chamber in which a processing space for processing a substrate is generated by generating plasma therein and a process gas into the chamber. A gas support device for spraying the gas, a substrate support device installed to face the gas supply device and having a substrate seated thereon, and including a filter for filtering high frequency components in the chamber; a gas supply device during a first insulating film deposition process; A first power supply unit connected to at least one of the substrate supporting apparatuses to provide a first high frequency power having a center frequency band of 20 to 70 MHz, and a gas supply apparatus and a substrate during a second insulating layer deposition process having a different etching selectivity from the first insulating layer A second high frequency power having a center frequency band of 10 to 20 MHz in connection with at least one of the supporting devices; A second power supply and driven with a plasma power supply and including a first power supply and the second power supply unit optionally may be configured to include a controller configured to provide a control signal to the filter.

Description

Apparatus for Deposition of Thin Film and Method Using the Same}

The present invention relates to a thin film forming apparatus for a semiconductor device, and more particularly, to a thin film deposition apparatus and a deposition method.

The thin film for manufacturing a semiconductor device may be formed through a method such as deposition, growth, and the like.

One of the thin film deposition methods is a chemical vapor deposition (CVD) method. CVD is a technique of forming a thin film by gas phase reaction by decomposing the source gas by flowing the source gas on the substrate and applying external energy. An advanced form of the CVD method is the plasma CVD method. The plasma CVD method is a method of decomposing a reaction gas by depositing a target material on a substrate, and may be classified into a direct plasma method and a remote plasma method.

Various kinds of thin films can be deposited by the plasma CVD method, and the film characteristics such as stress, surface uniformity, surface roughness and density, and film thickness of the deposited thin film have a great influence on the yield and reliability of the resulting semiconductor device. Crazy

Currently, plasma CVD equipment uses a high frequency power source with a center frequency band of 13.56 MHz. However, when using a high frequency power source of 13.56MHz, the deposition rate is low, which causes a problem of not only decreasing the uniformity of the deposited film but also increasing the processing time and the trouble of controlling the temperature inside the chamber.

For example, a nitride film formed by plasma CVD equipment using a high frequency power source of 13.56 MHz has a large compressive stress. As a result, problems such as cracking may occur in the subsequent heat treatment process, or may affect stress migration characteristics of the lower layer, in particular, the lower metal layer. In addition, a high temperature annealing process must be followed to discharge hydrogen ions (H ⁺ ) bound to the nitride film, and the film quality of the nitride film can be changed in this process.

In addition, in the case of the oxide film formed by the plasma CVD equipment using a high frequency power source of 13.56MHz, there is a problem that the stress characteristic is changed by the applied heat. The oxide film is usually applied as an interlayer insulating film or an intermetallic insulating film. If the thickness of the oxide film is not formed uniformly, a leakage current occurs and the operating performance of the semiconductor device is degraded.

Recently, as one of methods for achieving high integration of semiconductor devices, technologies for manufacturing semiconductor devices in three dimensions have been actively studied. In order to ensure uniform operation characteristics and reliability of such a semiconductor device, it is required to deposit a thin film having a uniform thickness on a substrate in multiple layers.

Embodiments of the present technology may provide a thin film deposition apparatus and a deposition method capable of uniformly forming a thickness of a thin film for each layer in alternately depositing a plurality of thin films having different etching selectivity.

A thin film deposition apparatus according to an embodiment of the present technology includes a thin film deposition apparatus for alternately depositing a plurality of material films on a substrate, the chamber including a chamber in which a processing space for processing the substrate is generated; A gas supply device for injecting a process gas into the chamber; A substrate support device installed to face the gas supply device, the substrate mounted on an upper portion, and a filter configured to filter high frequency components inside the chamber; A first power supply unit connected to at least one of the gas supply device and the substrate support device to provide a first high frequency power having a center frequency band of 20 to 70 MHz during a first insulating film deposition process, the first insulating film and an etch selection A plasma power supply unit including a second power supply unit connected to at least one of the gas supply device and the substrate support device to provide a second high frequency power having a center frequency band of 10 to 20 MHz during a second insulating film deposition process having a different ratio; And a controller configured to selectively drive the first power supply and the second power supply and to provide a control signal to the filter.

According to one or more exemplary embodiments, a thin film deposition method includes a first power supply configured to provide a first high frequency power having a center frequency band of 20 to 70 MHz, and a second high frequency power having a center frequency band of 10 to 20 MHz. In the thin film deposition apparatus comprising a plasma power supply including a second power supply configured to, and a filter for filtering the first or second high frequency components and varying the impedance of the chamber, the first insulating film having different etching selectivity and A thin film deposition method for alternately depositing a second insulating film, the method comprising: forming the first insulating film on a semiconductor substrate by supplying the first high frequency power and controlling the filter by a first control signal; And supplying the second high frequency power and controlling the filter by a second control signal to form the second insulating film in situ on the first insulating film.

According to the present technology, in depositing a plurality of thin films having different etching selectivity alternately, the thickness of the thin film may be uniformly formed for each layer. In addition, the thin film may be deposited to have a desired hardness according to the type of material film to be deposited or the stacking position of the material film to be deposited.

1 is a block diagram of a thin film deposition apparatus according to an embodiment.
2 is a structural diagram of a thin film deposition apparatus according to an embodiment.
3 is a diagram illustrating a high frequency plasma sheath and an RF plasma sheath according to one embodiment.
4 is a block diagram of a filter according to an embodiment.
5 is a block diagram illustrating a filter unit according to an embodiment.
6 is a block diagram illustrating a filter unit according to an embodiment.
7 and 8 are cross-sectional views of devices for explaining a thin film deposition method according to an embodiment.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present technology in more detail.

1 is a block diagram of a thin film deposition apparatus according to an embodiment.

Referring to FIG. 1, the thin film deposition apparatus 10 according to an exemplary embodiment includes a controller 100, a chamber 110 having a first electrode 120 and a second electrode 130, and a plasma power supply unit 140. , Matching network 150, and filter 160.

The controller 100 is configured to control the overall operation of the thin film deposition apparatus 10. In one embodiment, the controller 100 may control the operation of each component 110 to 160, and may set a control parameter for a thin film deposition process. Although not shown, the controller 100 may include a central processing unit, a memory, an input / output interface, and the like. In particular, in one embodiment, the controller 100 controls the plasma power supply 140 and the matching network 150 according to the type of material film deposited in the chamber 110. Furthermore, the controller 100 controls the filter 160 according to the type and stacking position of the material film being deposited in the chamber 110, so that the impedance in the chamber 110 can be varied.

The chamber 110 provides an environment in which a thin film made of a target material may be formed on the substrate by plasma CVD while maintaining the substrate therein.

In the chamber 110, the first electrode 120 and the second electrode 130 may be installed to face each other.

The plasma power supply 140 may include a first power supply 141 and a second power supply 143. The first power supply 141 may be configured to provide a VHF (Very High Frequency) power source (first high frequency power source) having a center frequency band of 20 to 70 MHz as a plasma power source. The second power supply unit 143 may be configured to provide a radio frequency (RF) power source (second high frequency power source) having a center frequency band of 10 to 20 MHz as a plasma power source. The controller 100 may selectively turn on / off the first power supply 141 or the second power supply 143 according to a preset deposition control parameter. The first power supply 141 and the second power supply 143 may be selectively driven based on the type of thin film to be deposited.

In one embodiment, the plasma power supply 140 may be connected to a gas supply as the first electrode 120 to provide a plasma power source. In this case, the second electrode 130 may be a susceptor having a mounting portion on which the substrate is mounted, and may be connected to the ground terminal. In another embodiment, the plasma power supply 140 may be connected to a susceptor as the second electrode 130 to provide a plasma power source. In this case, the first electrode 120 may be a gas supply device.

For example, the substrate is seated on the susceptor serving as the second electrode 130, and the inside of the chamber 110 is vacuumed, and the first and second power sources in the plasma power supply unit 140 are injected at the same time as the process gas is injected. By selectively driving the supplies 141 and 143 to apply VHF or RF high frequency power to the first electrode 120, the plasma 170 can be formed between the first electrode 120 and the second electrode 130. have.

The matching network 150 may be configured to match the output impedance of the plasma power supply 140 with the load impedance in the chamber 110 to remove the reflection loss as the high frequency power is reflected from the chamber 110. The matching network 150 may include a first matching unit 151 connected between the first power supply unit 141 and the first electrode 120, and a second connecting unit connected between the second power supply unit 143 and the first electrode 120. 2 may include a matching unit 153. Accordingly, impedance matching is performed through the first matching unit 151 when the first power supply unit 141 is in a driving state, and through the second matching unit 153 when the second power supply unit 143 is in a driving state. Impedance matching is made.

The filter 160 filters the high frequency transmitted through the second electrode 130 when the high frequency power is applied to the first electrode 120 through the plasma power supply 140 so that the high frequency power is not radiated to the outside. . In addition, the filter 160 may be configured such that the capacitance is variable, thereby changing the impedance in the chamber 110. The filter 160 may be configured to include a single filter unit having a variable capacitance, or may include a plurality of filter units corresponding to the first and second power supplies 141 and 143 and having a variable capacitance. have.

In one embodiment, the filter 160 may vary in impedance according to a control signal preset by the controller 100 at the beginning of the thin film deposition process, or may be impedance in real time according to a control signal provided by the controller 100 during the process. Can be varied. In one embodiment, the filter 160 may be controlled to have a fixed impedance when the second power supply 143 is in a driving state, and may be controlled to vary an impedance when the first power supply 141 is in a driving state. . In another embodiment, the filter 160 may be controlled to have different impedances when the second power supply 143 is in the driving state and when the first power supply 141 is in the driving state. In another embodiment, the filter 160 may be controlled to have different impedances depending on the type and / or stacking position of the thin film being deposited.

The first power supply unit 141 of the thin film deposition apparatus 10 according to the present technology uses a first high frequency power source having a center frequency band of 20 to 70 MHz, preferably a center frequency band of 27.12 MHz, as a plasma power source. . In addition, the second power supply 141 uses a second high frequency power source having a center frequency band of 10 to 20 MHz, preferably a center frequency band of 13.56 MHz, as a plasma power source. Therefore, the first high frequency power source or the second high frequency power source may be selectively applied according to the type of thin film to be deposited.

In addition, by controlling the filter 160 to have a variable impedance in addition to filtering the high frequency, the impedance in the chamber 110 may be varied according to the type and / or stacking position of the thin film to be deposited.

In one embodiment, the thin film deposition apparatus 10 may be a device for alternately depositing a first insulating film and a second insulating film having a different etching selectivity from the first insulating film in an in-situ manner to form a multilayer thin film. have.

In exemplary embodiments, the first insulating layer may be a silicon nitride layer, and the second insulating layer may be a silicon oxide layer. In this case, the silicon nitride film may be formed using SiH ₄ and NH ₃ as the process gas, and the silicon oxide film may be formed using TEOS and O ₂ as the process gas.

As another example, the first insulating film may be a polysilicon film, and the second insulating film may be a silicon oxide film. In this case, the polysilicon film may be formed using Si and SiH ₄ as the process gas, and the silicon oxide film may be formed using SiH ₄ and N ₂ O as the process gas.

As another example, the first insulating film may be either a silicon nitride film or a polysilicon film, and the second insulating film may be a silicon oxide film based on TEOS or a silicon oxide film based on SiH ₄ .

In the present technology, when depositing the first insulating film, the first power supply unit 151 supplies a first high frequency power having a center frequency band of 20 to 70 MHz, preferably a center frequency band of 27.12 MHz, to the plasma power source through the first power supply unit 151. do. In addition, when depositing the second insulating film, a second high frequency power source having a center frequency band of 10 to 20 MHz, and preferably a center frequency band of 13.56 MHz is supplied to the plasma power source through the second power supply unit 153.

When the frequency of the plasma power source is raised from 20 to 70 MHz, the plasma is generated using a frequency power higher than the RF frequency, so that the plasma ion flux is increased while the ion energy and ion bombardment are increased. Is reduced.

Since the ion energy is reduced, the hydrogen groups generated during the deposition process also have low ion energy, and most of them react easily with other reactors to maintain a stable state or volatilize. In addition, by using a high-frequency power source of 20 ~ 70MHz, since the ion collision rate is reduced, it is possible to fundamentally block the occurrence of additional hydrogen groups due to ion collision. As a result, it is possible to solve the problem of residual hydrogen groups without affecting the film quality. Therefore, it is not necessary to proceed the high temperature post-treatment process to remove the hydrogen ions, it is possible to prevent the film quality behavior phenomenon by the high temperature annealing process.

In addition, in order to generate plasma, when a high frequency power is applied, the reactance component of impedance is reduced as shown in the following equation, so that the plasma loss is reduced, the deposition rate can be improved.

<Expression>

Furthermore, when using the first high frequency power of the VHF, as shown in FIG. 3, it can be seen that the edge portion of the plasma sheath layer is formed at a position lower than the center as compared to the case of using the RF power. That is, the plasma sheath layer is generated closer to the substrate at the edge side than the center. Thus, although the plasma gas is concentrated in the center of the substrate, the plasma gas is generated closer to the substrate at the edge portion of the substrate.

The nitride film and the polysilicon film are known to have a greater effect by plasma sheath than the oxide film. Therefore, when using the plasma power source of the VHF when forming the first insulating film, that is, the nitride film or the polysilicon film as in the present invention, it is possible to form the first insulating film having a uniform thickness from the center portion of the substrate to the edge portion.

On the other hand, when a plurality of material films having different etching selectivity are laminated alternately, the hardness (crunching) of each laminated film may be an important parameter depending on subsequent processes.

The hardness of the deposited material film may be represented by a wet etching rate (WER), and the hardness control may be achieved by controlling the impedance of the filter 160.

In detail, when the filter 160 including the variable capacitor is installed in the plasma chamber 110, the voltage applied to the plasma apparatus as a whole is divided into the plasma chamber voltage and the filter voltage, respectively.

<Expression>

V _plasma = V _ch + V _filter (V _plasma : Voltage applied to plasma device, V _ch : Chamber voltage, V _filter : Filter voltage)

As such, as the filter 160 having the variable capacitor is connected to the chamber 110, a part of the applied voltage to be provided to the plasma chamber 110 is divided into the filter 160. Therefore, substantially the magnitude of the voltage applied to the plasma chamber 110 is at a relatively lower level than without the filter 160. In particular, when the capacity of the variable capacitor in the filter 160 is increased, the power voltage applied to the plasma chamber is further reduced.

When the voltage applied in the plasma chamber 110 is reduced in this manner, the ion bombardment is also reduced in proportion thereto. As a result, the hardness of the material film formed in the plasma chamber 110 is lowered. A detailed experimental example is described in the article "Influence of ion bombardment on structure and properties of unbalanced magnetron grown CrNx coatings" proposed by T. Hurkmans et al.

Accordingly, material layers having different hardness may be deposited by changing capacitance of the variable capacitor constituting the filter 160.

For example, the first insulating layer including nitride or polysilicon has a poor etching selectivity compared to the oxide layer, so that the variable capacitor of the filter 160 has a low capacitance or low so as to have a relatively low hardness, that is, easily etched. Adjust it to have a value equal to zero. On the other hand, since the second insulating film containing an oxide has a higher etching selectivity than the nitride film or the polysilicon film, so as to have a relatively high hardness, that is, less etching than the first insulating film, the variable of the filter 160 Increase capacitance

Meanwhile, a process of alternately stacking a plurality of thin films having different etching selectivity and subsequently forming a contact hole in the laminated film may be illustrated. In this case, the thin film positioned on the lower side with respect to the stacking direction of each material film is less affected by the etching gas than the thin film positioned on the upper portion. Therefore, even if the same material film, the etch rate of the thin film located below the lower than the thin film located on the upper.

Therefore, when a plurality of thin films having different etching selectivity are alternately deposited, the thin film positioned at the bottom and the thin film positioned at the top in the stacking direction need to have different hardness even if they are the same material film. Therefore, it is possible to prepare for the subsequent etching process by controlling the hardness of the thin film stacked on the bottom and the thin film stacked on the top for each material film.

As described above, in stacking a plurality of material films having different etching selectivity alternately, the hardness may be adjusted for each type of material film deposited through the filter 160, or the hardness may be adjusted according to the stacking position of each material film.

2 is a structural diagram of a thin film deposition apparatus according to an embodiment.

The thin film deposition apparatus 20 may include a chamber 200, a controller 201, a gas supply device 230, a substrate support device 240, a driver 250, a plasma power supply 260, a matching network 270, and a filter. 280 and the heater power supply 290 may be included.

The chamber 200 may include a main body 210 having an open top and a top lead 220 installed on an outer circumference of the upper end of the main body 210. The inner space of the top lid 220 may be closed by the gas supply device 230. In addition, an insulating ring r is installed between the gas supply device 230 and the top lead 220 to electrically insulate the chamber 200 and the gas supply device 230.

The interior space of the chamber 200 may be a space where a process is performed on the substrate W, such as a deposition process. The gate G may be provided at the designated position on the side of the main body 210 to carry in and take out the substrate W. A through hole into which the support shaft 244 of the substrate support device 240 is inserted may be formed at the bottom of the main body 210. Since the inside of the chamber 200 should generally be formed in a vacuum atmosphere, an exhaust port 212 for discharging gas existing in the space inside the chamber 200 may be formed at a designated location of the main body 210, for example, a bottom surface thereof. have. The exhaust port 212 may be connected to the external pump 213.

The gas supply device 230 may be installed to face the substrate supporter 240 inside the top lead 220. The gas supply device 230 may receive various process gases supplied from the outside through the gas line 232 and inject them into the chamber 200. The gas supply device 230 may be selected from various gas supply devices such as a showerhead type, an injector type, a nozzle type, and the like. In one embodiment, the gas supply device 230 may act as a first electrode.

The substrate support device 240 may include a substrate seating part (susceptor 242) and a support shaft 244. The substrate seating part 242 may have a flat shape as a whole so that at least one substrate W is seated on an upper surface thereof, and may be installed in a horizontal direction with respect to the top lead 220 inside the chamber 200. The support shaft 244 is vertically coupled to the rear surface of the substrate seating portion 242, and is connected to an external driving unit 250 through a through hole at the bottom of the chamber 200, thereby elevating and / or rotating the substrate seating portion 242. It can be configured to. In one embodiment, the substrate seating portion 242 may act as a second electrode.

In addition, the heater 246 is provided inside the substrate seating portion 242 to adjust the temperature of the substrate W mounted on the upper portion.

The controller 201 is configured to control the overall operation of the thin film deposition apparatus 20. In one embodiment, the controller 201 controls the operation of each component 200 to 290 and may set control parameters for the thin film deposition process. Although not shown, the controller 201 may include a central processing unit, a memory, an input / output interface, and the like.

The plasma power supply 260 may include a first power supply 261 and a second power supply 263. The first power supply 261 may be configured to provide a VHF power source (first high frequency power source) having a center frequency band of 20 to 70 MHz as a plasma power source. The second power supply 263 may be configured to provide a radio frequency (RF) power (second high frequency power) having a center frequency band of 10 to 20 MHz as a plasma power source. The controller 201 may selectively turn on / off the first power supply 261 or the second power supply 263 according to a preset deposition control parameter.

For example, the substrate W may be seated on the substrate seating portion 242 as the second electrode, and the chamber 200 may be vacuumed, and the process gas may be injected thereinto. Plasma can be formed between the gas supply device 230 and the substrate mounting portion 242 by applying the first high frequency power supply or the second high frequency power to the gas supply device 230 as the first electrode.

The matching network 270 may include a first matching unit 271 connected to the first power supply 261 and a second matching unit 273 connected to the second power supply 263. The first and second matching units 271 and 2873 of the matching network 270 match the output impedances of the first and second power supplies 261 and 263 and the load impedances in the chamber 200, respectively, so that a high frequency power source is provided. It may be configured to eliminate the reflection loss as reflected from the chamber 200.

The filter 280 filters the high frequency transmitted through the substrate seating part 242 when the high frequency power is applied to the gas supply device 230 through the plasma power supply unit 260 so that the high frequency power is not radiated to the outside. . In addition, the filter 280 is configured to vary the capacitance under the control of the controller 201, the capacitance can be varied by varying the impedance inside the chamber 200.

The heater power supply 290 may be configured to supply power to the heater 246 so that the heater 246 generates heat.

Meanwhile, although FIG. 2 illustrates an example in which the exhaust port 212 is formed at the bottom of the chamber 200, the exhaust port 212 may be formed at the side surface of the chamber 200.

In the thin film deposition apparatus 20 shown in FIG. 2, the plasma power supply unit 260 is a VHF power source having a frequency of 20 to 70 MHz (first high frequency) based on the characteristics or type of the thin film to be deposited under the control of the controller 201. Power supply) or 10-20 MHz RF power supply (second high frequency power supply) to the plasma power source. In addition, the filter 280 filters the high frequency power supplies VHF and RF so as not to be radiated to the outside, and the impedance is changed according to a control signal provided from the controller 201 to change the impedance inside the chamber 200. .

In one embodiment, the impedance of the filter 280 may be preset before the deposition process depending on the type of film being deposited, the location of the deposition, or the properties of the film desired. In another embodiment, the impedance of filter 280 may change in real time during the deposition process.

4 is a block diagram of a filter according to an embodiment.

The filters 160 and 280 may be configured as a single filter unit whose impedance is variable, or may be configured as a plurality of filter units corresponding to the type of plasma power source supplied from the plasma power supply units 140 and 260. When the filters 160 and 280 include a plurality of filter units, the impedances of the filter units may be fixed or variable.

FIG. 4 illustrates a case in which the filter 30 includes the first filter part 310 and the second filter part 320 corresponding to the type of the plasma power source.

Referring to FIG. 4, the filter 30 includes a first filter part 310 and a second filter part 320. The first and second filter parts 310 and 320 are selectively provided with a substrate seating part by the switching part 330 which is switched in response to a control signal CON <0: 1> provided from the controllers 100 and 201. 242 may be connected.

In an embodiment, the first and second filter units 310 and 320 may be configured to have different impedances. In another embodiment, at least one of the first and second filter units 310 and 320 may be configured to include a variable capacitor.

5 is a configuration diagram of a filter unit according to an embodiment, and illustrates a filter unit including a variable capacitor.

Referring to FIG. 5, the filter unit 40-1 may include an inductor unit 411 and a capacitor unit 413.

The inductor unit 411 may include an inductor connected between the board seat connection terminal A and the heater power supply unit 290 connection terminal B. FIG.

The capacitor unit 413 may be connected between the inductor unit 411 and the connection node and the ground terminal of the heater power supply unit 290, may be configured as a variable capacitor, and the capacitance may be adjusted by the controllers 100 and 201. Can be.

6 is a block diagram illustrating a filter unit according to an embodiment, and illustrates a filter unit including a variable capacitor.

Referring to FIG. 6, the filter 40-2 may include an inductor 411 and a capacitor 415.

The inductor unit 411 may include an inductor connected between the board seat connection terminal A and the heater power supply unit 290 connection terminal B. FIG.

The capacitor unit 415 may be connected between the inductor unit 411 and the connection node and the ground terminal of the heater power supply unit 290. In addition, the capacitor unit 415 may have a structure in which at least one capacitor C0 to Cn having a fixed capacitance is connected in parallel, and each capacitor CO to Cn is a switch control provided from the controllers 100 and 201. The switching elements SW0 to SWn driven by the signals SW <0: n> may be connected to each other. Therefore, on / off of the switching elements SW0 to SWn is determined by the switch control signals SW <0: n>, and thus the capacitance of the capacitor unit 415 may be determined.

The controllers 100 and 201 may generate control signals during the initial process or during the process to set the capacitance of the filters 40-1 and 40-2 shown in FIG. 5 or 6. In addition, since the capacitances of the filters 40-1 and 40-2 vary the impedance inside the chambers 110 and 200, the filter 40-1, in consideration of the type of material film to be deposited, the stacking position, the stress characteristics, and the like. The capacitance of 40-2) can be determined.

7 and 8 are cross-sectional views of devices for explaining a thin film deposition method according to an embodiment.

Referring to FIG. 7, the first insulating films 510a, 510b, 510c, and 510d and the second insulating film may be formed on the semiconductor substrate 500 by using the thin film deposition apparatus 10 or 20 illustrated in FIG. 1 or 2. 520a, 520b, and 520c are alternately stacked. The first insulating layers 510a, 510b, 510c, and 510d and the second insulating layers 520a, 520b, and 520c may be insulating layers having different etching selectivity. In example embodiments, the first insulating layers 510a, 510b, 510c, and 510d may be silicon nitride, and the second insulating layers 520a, 520b, and 520c may be silicon oxide. In this case, the silicon nitride film may be formed using SiH ₄ and NH ₃ as the process gas, and the silicon oxide film may be formed using TEOS and O ₂ as the process gas. As another example, the first insulating layers 510a, 510b, 510c, and 510d may be polysilicon layers, and the second insulating layers 520a, 520b, and 520c may be silicon oxide layers. In this case, the polysilicon film may be formed using Si and SiH ₄ as the process gas, and the silicon oxide film may be formed using SiH ₄ and N ₂ O as the process gas. As another example, the first insulating layers 510a, 510b, 510c, and 510d may be any one of a silicon nitride film and a polysilicon film, and the second insulating films 520a, 520b, and 520c may be a TEOS-based silicon oxide film or a SiH ₄ based film. Silicon oxide film.

FIG. 7 shows an example in which the first insulating films 510a, 510b, 510c, and 510d are stacked in four layers and the second insulating films 520a, 520b, and 520c are stacked in three layers. Of course, it is also possible to alternately stack up to several tens of layers.

In an embodiment, the first power supply units 141 and 261 are driven by the controllers 100 and 201 to form the first insulating layers 510a, 510b, 510c, and 510d, so that the center frequency band is 20 to 70 MHz, Preferably, the VHF power supply (second high frequency power supply) of 27.12 MHz can be supplied. Then, the second power supply units 143 and 263 are driven by the controllers 100 and 201 to form the second insulating films 520a, 520b, and 520c, and the center frequency band is 10 to 20 MHz, preferably 13.56 MHz. RF power (second high frequency power supply) can be supplied. Therefore, each laminated film can be formed with a uniform thickness from the center portion to the edge side.

In addition, when the first insulating layers 510a, 510b, 510c, and 510d and / or the second insulating layers 520a, 520b and 520c are formed, the impedances in the chambers 110 and 200 are varied by the filters 160 and 280. The hardness of the material film to be deposited may be changed.

For example, the capacitances of the filters 160 and 280 at the time of depositing the first insulating films 510a, 510b, 510c, and 510d differ from the capacitances of the filters 160 and 280 at the time of depositing the second insulating films 520a, 520b and 520c. Can be controlled.

Furthermore, the capacitances of the filters 160 and 280 may be controlled differently according to the stacking positions of the first insulating layers 510a, 510b, 510c and 510d, and the filters may be controlled according to the deposition positions of the second insulating layers 520a, 520b and 520c. The capacitances 160 and 280 may be controlled differently.

Accordingly, it can be controlled to have different film properties, in particular hardness, depending on the type of material film to be deposited, and in addition to the stacking position of the material film to be deposited.

Meanwhile, when argon (Ar) is used as an inert gas when the first and second insulating layers 510a, 520a, 510b, 520b, 510c and 520c 510d are deposited or when the second insulating layers 520a, 520b and 520c are deposited, deposition is performed. It is possible to further improve the characteristics of the thin film.

Referring to FIG. 8, predetermined portions of the first and second insulating layers 510a, 520a, 510b, 520b, 510c, and 520c 510d are etched to form contact holes H2.

As the hardness of the thin film is individually adjusted according to the type and stacking position of the material film for each of the layers constituting the first and second insulating layers 510a, 520a, 510b, 520b, 510c, and 520c 510d, the contact hole H2 may be adjusted. ) May have a uniform diameter at any position.

As such, those skilled in the art will appreciate that the present invention can be embodied in other specific forms without changing the technical spirit or essential features thereof. Therefore, the above-described embodiments are to be understood as illustrative in all respects and not as restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

10, 20, 60, 70: thin film deposition apparatus
200: chamber
210: body
220: top lead
230: gas supply device
240: substrate support device
250 drive unit
260: plasma power supply
270: Matching Network
280: filter
290: heater power supply
r: Insulation ring

Claims (14)

A thin film deposition apparatus for alternately depositing a plurality of material films on a substrate,
A chamber in which a processing space for processing the substrate is generated by generating a plasma therein;
A gas supply device for injecting a process gas into the chamber;
A substrate support device installed to face the gas supply device, the substrate mounted on an upper portion, and a filter configured to filter high frequency components inside the chamber;
A first power supply unit connected to at least one of the gas supply device and the substrate support device to provide a first high frequency power having a center frequency band of 20 to 70 MHz during a first insulating film deposition process, the first insulating film and an etch selection A plasma power supply unit including a second power supply unit connected to at least one of the gas supply device and the substrate support device to provide a second high frequency power having a center frequency band of 10 to 20 MHz during a second insulating film deposition process having a different ratio; And
A controller configured to selectively drive the first power supply and the second power supply and to provide a control signal to the filter;
Thin film deposition apparatus configured to include. The method of claim 1,
And the first power supply unit is configured to provide the first high frequency power having a center frequency band of 27.12 MHz, and the second power supply unit is configured to provide the second high frequency power having a center frequency band of 13.56 MHz. . The method of claim 1,
The filter is thin film deposition apparatus which is driven corresponding to the first power supply and the second power supply, and comprises a variable capacitor. The method of claim 3, wherein
And the filter is configured to include a variable capacitor whose capacitance is determined in a motor driving manner in response to the control signal. The method of claim 3, wherein
The filter may include a plurality of capacitors each having a predetermined fixed capacitance; And
A switch element connected to each of the capacitors and switched on / off under the control of the controller;
Thin film deposition apparatus configured to include. The method of claim 1,
The filter may include a first filter unit driven corresponding to the first power supply unit; And
A second filter part driven corresponding to the second power supply part;
Thin film deposition apparatus comprising a. The method of claim 6,
At least one of the first filter unit and the second filter unit is configured to include a variable capacitor. The method of claim 1,
A first matching part connected between the gas supply device and the first power supply part, and a second matching part connected between the gas supply device and the second power supply part, the output impedance of the plasma power supply part and the And a matching network configured to match an impedance within the chamber. A plasma power supply including a first power supply configured to provide a first high frequency power having a center frequency band of 20 to 70 MHz, and a second power supply configured to provide a second high frequency power having a center frequency band of 10 to 20 MHz And a filter for filtering the first or second high frequency component and varying the impedance of the chamber, wherein the thin film deposition method alternately deposits a first insulating film and a second insulating film having different etching selectivity. ,
Supplying the first high frequency power and controlling the filter by a first control signal to form the first insulating film on a semiconductor substrate; And
Supplying the second high frequency power and controlling the filter by a second control signal to form the second insulating film in situ on the first insulating film;
Thin film deposition method comprising a. The method of claim 9,
Forming the first insulating film and the second insulating film is a thin film deposition method is performed at least once. The method of claim 9,
And the second insulating film is an oxide film. The method of claim 9,
And the first insulating film is a polysilicon film and the second insulating film is an oxide film. The method of claim 9,
And the filter controls the impedance in the chamber differently in the first insulating film forming step and the second insulating film forming step. The method of claim 9,
The first insulating film and the second insulating film is repeatedly stacked a plurality of times,
And the filter controls the impedance in the chamber differently according to the stacking position of the first insulating film or the second insulating film.

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