KR20170056390A - Method for manufacturing thin film of graphene having bandgap and thin film transistor having the thin film of graphene manufactured by the method - Google Patents
Method for manufacturing thin film of graphene having bandgap and thin film transistor having the thin film of graphene manufactured by the method Download PDFInfo
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
A method of manufacturing a graphene thin film having a band gap is disclosed. In order to fabricate a graphene thin film having a bandgap, a graphene thin film is exposed to a plasma to form carbon vacancies in the graphene thin film, and the formed carbon vacancies can be doped with boron and nitrogen.
Description
The present invention relates to a method of manufacturing a graphene thin film having a band gap and a thin film transistor including the graphene thin film produced thereby. More particularly, the present invention relates to a thin film transistor including a graphene thin film doped with nitrogen and boron And a thin film transistor including the graphene thin film produced thereby.
A graphene is a two-dimensional structure of a plate in which carbon atoms are connected in a hexagonal shape. Graphene is excellent in transparency and conductivity and can be used for various electronic devices such as ultra-high-speed semiconductors, transparent electrodes, and high-efficiency solar cells.
However, graphene has characteristics without band gap, which has problems in transistor and electric device application using graphene. In order to overcome this problem, attempts have been made to create a bandgap of graphene using two layers of graphene or a graphene nanoribbon. However, it has been difficult to form a bandgap of graphene due to the difficulty of obtaining uniform two-layer graphenes, the difficulty of synthesizing graphene nanoribbons, and the limitation of size.
Alternatively, in the case of the h-BN (hexagonal Boron Nitride) consisting of boron and nitrogen Yes composed of sp 2 hybrid bond, such as a pin, yes and of the chemical vapor deposition process for growing a pin, In the borazine source, B , N-doped graphene nanotubes. However, there is a problem that the boron-nitrogen bond and the carbon-carbon bond are dominantly formed as compared with the boron-carbon bond and the boron-nitrogen bond, so that graphene and h-BN are formed separately.
SUMMARY OF THE INVENTION The present invention provides a method of manufacturing a graphene thin film having a bandgap by doping nitrogen and boron.
It is another object of the present invention to provide a thin film transistor including a graphene thin film manufactured by the above method.
According to an aspect of the present invention, there is provided a method of manufacturing a graphene thin film having a band gap according to an embodiment of the present invention includes: forming a carbon vacancy in a graphene thin film by exposing a graphene thin film to plasma; And doping the carbon vacancies with boron and nitrogen.
In one embodiment, forming the carbon vacancies may include exposing the graphene thin film to an inert gas plasma.
In one embodiment, the ratio of the carbon vacancies may be less than or equal to 36% of the total carbon number of the graphene thin film.
In one embodiment, in the step of forming the carbon vacancies, the plasma may be generated by a capacitively coupled plasma (CCP) method, and the size of the power source applied to the plasma may be 10 to 30 W.
In one embodiment, doping the boron and nitrogen may include injecting borazine into the chamber in which the graphene film is disposed and heating the chamber interior to a high temperature. In this case, the inside of the chamber where the graphene thin film is disposed may be heated at a temperature of 800 to 1200 ° C for 5 to 25 minutes.
In one embodiment, the doped nitrogen in the carbon vacancies may be combined with carbon and boron.
In one embodiment, the step of forming the carbon vacancies may comprise exposing the graphene thin film grown on the first substrate to the plasma, wherein the doping the boron and nitrogen comprises: And then transferring the formed graphene film to the second substrate. In this case, a metal substrate may be used as the first substrate, and a semiconductor substrate may be used as the second substrate.
The thin film transistor according to another embodiment of the present invention may include a channel layer connecting the source electrode and the drain electrode, and the channel layer may include a thin film of a graphene doped with boron and nitrogen, And carbon.
In one embodiment, in the graphene thin film, the bond concentration between nitrogen and carbon may be 1% or more and 4% or less of the bond concentration between carbon and carbon. In the graphene thin film, the bond concentration between boron and nitrogen may be 9% or more and 22% or less of the bond concentration between carbon and carbon.
In one embodiment, the channel layer may have a band gap of 6 meV to 14.5 meV.
The present invention has the effect of using graphene, which is difficult to apply to a conventional thin film transistor, to a thin film transistor by manufacturing a graphene thin film having a bandgap.
Further, by manufacturing a thin film transistor using a graphene thin film, there is an effect that a thin film transistor having excellent electrical characteristics can be provided.
1 is a view for explaining a method of manufacturing a graphene thin film having a band gap according to an embodiment of the present invention.
Fig. 2 is an optical microscope image of the graphene nanotubes prepared according to Example 1. Fig.
3 is an atomic force microscope image of a graphene nanotube film prepared according to Example 1 and a graph of the thickness of the thin film measured thereby.
FIG. 4 is a graph showing Raman spectra of graphene nanotubes immediately before heat treatment for boron and nitrogen doping in the comparative example and the manufacturing method according to Examples 1 to 3. FIG.
5 is a graph showing the intensity ratio of the D-peak to the G-peak calculated from the Raman spectrum of FIG.
FIG. 6 is a graph showing Raman spectra of graphene nanotubes immediately before heat treatment for nitrogen and boron doping and G-peak near graphene nanotubes after heat treatment in the comparative example and the manufacturing methods of Examples 1 to 3 Graphs.
FIG. 7 is a graph showing the degree of change in the G-peak median value of graphene nanotubes before and after the heat treatment calculated from the Raman spectrum of FIG. 6; FIG.
FIGS. 8 and 9 are XPS spectra of C1s versus graphene nanotubes before argon plasma treatment and graphene nanotubes after argon plasma treatment in the manufacturing method of Example 1. FIG.
FIGS. 10 to 12 are XPS spectra of C1s, N1s, and B1s for nitrogen and boron doped graphene nanotubes prepared according to the manufacturing method of Example 1. FIG.
13 is a transmission electron microscope image of the graphene nanotubes prepared according to Example 1. FIG.
FIG. 14A is a transmission electron microscope image of the graphene nanotube film manufactured according to Example 1, and FIG. 14B is an electron energy loss spectroscopy (EELS) analysis graph for the rectangular region shown in FIG. 14A.
15 is a graph showing the Id-Vg characteristics of the thin film transistors using the graphene nanotubes prepared according to the comparative example and the graphene nanotubes prepared according to Examples 1 to 3 as the channel layers.
FIGS. 16 and 17 are graphs showing resistance values according to temperature in thin film transistors using the graphene nanofibers prepared according to Comparative Examples and the graphene nanofibers prepared according to Examples 1 to 3 as channel layers .
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. Wherein like reference numerals refer to like elements throughout.
1 is a view for explaining a method of manufacturing a graphene thin film having a band gap according to an embodiment of the present invention.
Referring to FIG. 1, a method of manufacturing a graphene thin film having a band gap according to an embodiment of the present invention includes: forming a carbon vacancy in the graphene by exposing the graphene to a plasma; And doping the carbon vacancies with boron and nitrogen.
In one embodiment, the carbon pores can be formed by exposing the graphene thin film to an inert gas plasma. In one embodiment, the inert gas plasma may be argon plasma.
In one embodiment, the percentage of carbon vacancies may be less than or equal to about 36% of the total carbon number of the graphene.
In one embodiment, in the step of forming the carbon vacancies, the plasma is generated by a capacitively coupled plasma (CCP) method, and the size of a power source applied to the plasma may be about 10 to 30 W. As the magnitude of the power applied to the plasma increases, the proportion of atomic defects of the graphene may increase. However, when the atomic defect ratio of the graphene reaches the threshold value, the atomic defect ratio of graphene does not increase even if the size of the power source applied to the plasma is increased.
In one embodiment, doping the boron and nitrogen may include injecting borazine into the chamber in which the graphene is disposed and heating the interior of the chamber to a high temperature. In one embodiment, the interior of the chamber in which the graphene is disposed for doping the boron and nitrogen can be heated to a temperature of about 800 to 1200 DEG C for about 5 to 25 minutes. In this case, the borazine may be supplied into the chamber at a flow rate of about 0.1 to 0.5 sccm.
In one embodiment, the doped nitrogen in the carbon vacancies may be combined with carbon and boron. For example, doped boron and nitrogen can form sp 2 hybrid bonds with carbon.
In one embodiment, forming the carbon vacancies may include exposing the plasma to graphene grown on a first substrate, wherein the doping the boron and nitrogen comprises forming the carbon vacancies And then transferring the graphene to the second substrate. In one embodiment, a metal substrate may be used as the first substrate, and a semiconductor substrate such as a silicon substrate on which an oxide film is to be formed may be used as the second substrate.
In general, graphene exhibits the characteristics of a conductive material, whereas the graphene thin film produced by the above method can be doped with nitrogen and boron to have the characteristics of a P-type semiconductor. For example, the bandgap of the nitrogen and boron-doped graphene thin film may be about 6 meV to 14.5 meV.
On the other hand, in the nitrogen and boron-doped graphene thin film, the concentration of the boron-nitrogen bond may be about 9% to 22% of the carbon-carbon bond concentration, and the nitrogen- About 1% to about 4%. And boron-carbon bonds may hardly be formed.
The thus prepared nitrogen and boron doped graphene thin films have semiconductor characteristics and can be used as a channel layer of a thin film transistor. The channel layer can transfer the signal of the source electrode to the drain electrode according to the gate voltage applied to the gate electrode.
≪ Example 1 >
A copper foil (Alpha Acer) having a size of 2 cm × 10 cm and a thickness of 125 μm was prepared and washed with dilute hydrofluoric acid and deionized water. Thereafter, the copper foil was placed in a chemical vapor deposition (CVD) chamber, and then gradually heated to 1000 DEG C for 30 minutes using an inductive heating heat source. Then, the copper foil was heated at 1000 DEG C for 30 minutes Respectively. Thereafter, H 2 gas was supplied at a pressure of 40 mTorr and a flow rate of 5 sccm in the chemical vapor deposition apparatus chamber, and heat treatment was performed at 1000 ° C. for 40 minutes while methane (CH 4 ) gas was supplied at a pressure of 40 mTorr and a flow rate of 205 sccm, The supply of methane gas was stopped and the heat source was removed to naturally cool the inside of the chamber to obtain a graphene nanotube film.
The graphene nanotubes were exposed to 15W CCP (Capacitively Coupled Plasma) argon plasma. The graphene nanotubes exposed to argon plasma were transferred onto a silicon substrate deposited with 285 nm thick silica (SiO 2) using PMMA (Poly Methyl Methacrylate).
The graphene nanotubes transferred onto the silicon substrate were placed in a chamber of a chemical vapor deposition apparatus and heat treatment was performed at a temperature of 1000 ° C for 15 minutes while flowing a purge source at a flow rate of 0.2 sccm to form a graphene nano- To form a thin film.
≪ Example 2 >
Boron and nitrogen-doped graphene thin films were formed under the same conditions and conditions as in Example 1, except that the graphene nanotubes formed on the copper foil were exposed to a 20W-power CCP (Capacitively Coupled Plasma) type argon plasma .
≪ Example 3 >
Boron and nitrogen-doped graphene thin films were formed under the same conditions and conditions as in Example 1, except that the graphene nanotubes formed on the copper foil were exposed to a 25W-power CCP (Capacitively Coupled Plasma) type argon plasma .
<Comparative Example>
A graphene thin film was formed under the same conditions and in the same manner as in Example 1, except that the graphene nano-thin film formed on the copper foil was not exposed to argon plasma.
Experimental Example 1: Optical microscope image and atomic force microscope image analysis
FIG. 2 is an optical microscope image of the graphene nanotube film prepared according to Example 1, FIG. 3 is an atomic force microscope image of the graphene nanotube film prepared according to Example 1, and a graph of the thickness of the thin film .
Referring to FIG. 2, it can be seen that the graphene nanotubes formed on the silicon substrate are clearly distinguished from the silicon substrate, and that the uniform color of the graphene nanotubes indicates uniform graphene nanotubes .
Referring to FIG. 3, the graphene nanotubes prepared according to Example 1 have an average thickness of about 0.7 nm as measured by an atomic force microscope image.
≪ Experimental Example 2 >: Chemical Characterization by Raman Spectrum Measurement
FIG. 4 is a graph showing Raman spectra of graphene nanotubes immediately before heat treatment for boron and nitrogen doping in the comparative example and the manufacturing method according to Examples 1 to 3, and FIG. 5 is a graph showing the Raman spectrum Peak intensity ratio with respect to the G-peak.
So in the Raman spectrum of the pin, generally 1600cm -1 The higher the intensity ratio of the D- peak appearing in the vicinity of 1350cm -1 to the peak appearing in the vicinity of the G- Yes mean atomic defects degree is high in the thin film nano-pin .
4 and 5, in the graphene nanotubes of Examples 1 to 3 in which the argon plasma treatment was performed as compared with the graphene nano thin film of the comparative example in which the argon plasma treatment was not performed, the D-peak The ratio of the intensity of the magnetic field is larger. As a result, it can be confirmed that atomic defect is generated in the graphene nanotube film by the argon plasma treatment.
In the graphene nanotubes of Examples 1 to 3, the intensity ratio of D-peak to G-peak was the largest in the graphene nanotubes of Example 3, and the graphene nanotubes of Example 1 The intensity ratio of the D-peak to the G-peak was the smallest. As a result, the concentration of atomic defects formed in the graphene nanofiltration film increases as the power of the argon plasma increases.
However, the atomic defect concentration difference between the graphene nanotube film of Example 2 and the graphene nanotube film of Example 3 is different from the atomic defect concentration between the graphene nanotube film of Example 1 and the graphene nanotube film of Example 2 The concentration of atomic defects formed in the graphene nanotube film by the argon plasma treatment is not expected to increase beyond the threshold value.
FIG. 6 is a graph showing Raman spectra of graphene nanotubes immediately before heat treatment for nitrogen and boron doping and G-peak near graphene nanotubes after heat treatment in the comparative example and the manufacturing methods of Examples 1 to 3 And FIG. 7 is a graph showing the degree of change of the G-peak median value for the graphene nanoflakes before and after the heat treatment, which is calculated from the Raman spectrum of FIG.
In the Raman spectrum for graphene, the change in the G-peak median value of the graphene nanotube film before and after the heat treatment is caused by nitrogen and boron doped into graphene by heat treatment, and as the magnitude of the G- Nitrogen, and boron.
Referring to FIGS. 6 and 7, the G-peak median value was hardly changed in the comparative example, but the G-peak median value was changed in Examples 1 to 3. It can be seen that the degree of change in the G-peak median of Examples 1 to 3 changes in a pattern similar to the atomic defect concentration of the graphene nanoflakes shown in FIG.
From this, it can be confirmed that the degree of atomic defect of the graphene nanotubes formed before the heat treatment for doping affects the doping amount of nitrogen and boron. Specifically, it can be seen that as the concentration of atomic defects increases, the doping amount of nitrogen and boron increases.
Experimental Example 3 XPS analysis of Examples 1 to 3 and Comparative Example
FIGS. 8 and 9 are XPS spectra of C1s versus graphene nanotubes before argon plasma treatment and graphene nanotubes after argon plasma treatment in the manufacturing method of Example 1. FIG.
8 and 9, in the case of the graphene nanotube film before the plasma treatment, there is a peak due to atomic defect (Defect) in the vicinity of 285.6 eV, which is judged to be an influence due to the crystal interface of graphene, The bond is also considered to be the bond of carbon and oxygen at the crystal interface.
In the case of the graphene nanotube film after the plasma treatment, it can be confirmed that the peak size in the vicinity of 285.6 eV was larger than that of the graphene nanotube film before the plasma treatment. As a result of the quantitative analysis, it was found that the ratio of atomic defect was measured as 21% in the case of the graphene nanotube before the plasma treatment, but the proportion of the atomic defect was increased to 36% in the case of the graphene nanotube after the plasma treatment appear. That is, it was confirmed that atomic defects were additionally formed in the graphene nanotubes by the plasma treatment.
FIGS. 10 to 12 are XPS spectra of C1s, N1s, and B1s for nitrogen and boron doped graphene nanotubes prepared according to the manufacturing method of Example 1. FIG.
Referring to FIG. 10, it can be seen that the peak due to the atomic defect shifts from 285.6 eV to 286.0 eV in the case of the graphene nanotube film prepared according to Example 1, which is close to 286.2 eV representing C-N bond. In view of these results, it is judged that atomic defects existing in the graphene nanotubes are doped with nitrogen by a source of boron to form C-N bond.
Referring to FIGS. 11 and 12, it can be seen that N-B and B-N bonds are formed in the case of the graphene nanotubes produced according to the first embodiment.
Table 1 below shows the binding concentration ratios calculated using deconvoluted area values of the C, B, and N peaks of the XPS spectrum of the graphene nanotubes prepared according to Examples 1 to 3.
<Experimental Example 4> Transmission electron microscope and EELS analysis
13 is a transmission electron microscope image of the graphene nanotubes prepared according to Example 1. FIG.
Referring to FIG. 13, it can be seen that the graphene nanotubes prepared according to Example 1 have one SAED (Selected Area Diffraction) pattern consisting of six points, As shown in Fig.
FIG. 14A is a transmission electron microscope image of the graphene nanotube film manufactured according to Example 1, and FIG. 14B is an electron energy loss spectroscopy (EELS) analysis graph for the rectangular region shown in FIG. 14A.
When Fig. 14a and FIG. 14b, be a boron doped with nitrogen to a carbon public it can be confirmed that the carbon or form a different boron, nitrogen and the sp 2 hybrid bond.
<Experimental Example 5> Electrical Characteristic Analysis of Thin Film Transistor
Back-gate transistors were fabricated using the graphene nanotubes prepared according to Examples 1 to 3 and Comparative Example as a channel layer and using a silicon substrate having a width of 3 탆 and a length of 8 탆 as gates.
15 is a graph showing the Id-Vg characteristics of the thin film transistors using the graphene nanotubes prepared according to the comparative example and the graphene nanotubes prepared according to Examples 1 to 3 as the channel layers.
Referring to FIG. 15, when the graphene nanofiltration layer prepared according to the comparative example is used as a channel layer as shown in the first graph, the Dirac point is 0V. In contrast, when the graphene nanotubes prepared according to Examples 1 to 3 were used as the channel layer, the decolour point moved in the positive direction, and the more the intensity was increased in the plasma, the more the movement in the positive direction. That is, the graphene nanotubes prepared according to Examples 1 to 3 were P-type doped, and the degree of P-type doping increased as the intensity of plasma increased.
FIGS. 16 and 17 are graphs showing resistance values according to temperature in thin film transistors using the graphene nanofibers prepared according to Comparative Examples and the graphene nanofibers prepared according to Examples 1 to 3 as channel layers .
16 and 17, when the graphene nanotubes fabricated according to the comparative example are used as the channel layer, the resistance value of the transistor hardly changes according to the temperature, In the case of using the channel layer of the graphene nanofiltration film, the resistance value of the transistor decreases as the temperature increases. As a result, it can be seen that the graphene nanotubes produced according to Examples 1 to 3 have semiconductor characteristics.
On the other hand, the bandgap of the graphene nanotubes prepared according to Examples 1 to 3 was calculated using the graph of FIG. 17, and found to be 6.04 meV, 10.7 meV, and 14.4 meV, respectively.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the true scope of the present invention should be determined by the following claims.
Claims (13)
And doping the carbon vacancies with boron and nitrogen.
Wherein the graphene thin film has a bandgap.
Wherein forming the carbon vacancies comprises:
And exposing the graphene thin film to an inert gas plasma.
Wherein the graphene thin film has a bandgap.
Wherein the ratio of the carbon vacancies is 36% or less of the total carbon number of the graphene thin film.
Wherein the graphene thin film has a bandgap.
In the step of forming the carbon vacancies,
Wherein the plasma is generated by a CCP (Capacitively Coupled Plasma) method, the power applied to the plasma is 10 to 30 W,
Wherein the graphene thin film has a bandgap.
Wherein the boron and nitrogen doping comprises:
Injecting borazine into the chamber in which the graphen is disposed and heating the inside of the chamber to a high temperature.
Wherein the graphene thin film has a bandgap.
Wherein the inside of the chamber in which the graphen is disposed is heated at a temperature of 800 to 1200 DEG C for 5 to 25 minutes,
Wherein the graphene thin film has a bandgap.
Wherein the nitrogen doped in the carbon vacancies is chemically bonded to carbon and boron,
Wherein the graphene thin film has a bandgap.
Wherein forming the carbon vacancies comprises exposing the graphene grown on the first substrate to the plasma,
Wherein the boron and nitrogen doping is performed after transferring the graphene formed with the carbon vacancies to a second substrate,
Wherein the graphene thin film has a bandgap.
A metal substrate is used as the first substrate,
Wherein the second substrate is a semiconductor substrate,
Wherein the graphene thin film has a bandgap.
Wherein the channel layer comprises a thin film of graphene doped with boron and nitrogen,
Wherein the nitrogen is chemically bonded to boron and carbon.
In the graphene thin film, the bonding concentration between nitrogen and carbon is 1% to 4% of the bonding concentration between carbon and carbon,
Thin film transistor.
In the graphene thin film, the bonding concentration between boron and nitrogen is not less than 9% and not more than 22% of the bonding concentration between carbon and carbon,
Thin film transistor.
The channel layer having a band gap of 6 meV to 14.5 meV,
Thin film transistor.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20190083506A (en) | 2018-01-04 | 2019-07-12 | 우석대학교 산학협력단 | Graphene Doped with Nitrogen and Preparing Method for the Same |
| KR20220138522A (en) | 2021-04-05 | 2022-10-13 | 충남대학교산학협력단 | Manufacturing methode of Field Effect Transistor based on B-dopped graphine layer and P-type Field Effect Transistor using the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190083506A (en) | 2018-01-04 | 2019-07-12 | 우석대학교 산학협력단 | Graphene Doped with Nitrogen and Preparing Method for the Same |
| KR20220138522A (en) | 2021-04-05 | 2022-10-13 | 충남대학교산학협력단 | Manufacturing methode of Field Effect Transistor based on B-dopped graphine layer and P-type Field Effect Transistor using the same |
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