KR20170051835A - MEMS Device Using Multiple Sacrificial Layers and Manufacturing Method Thereof - Google Patents

MEMS Device Using Multiple Sacrificial Layers and Manufacturing Method Thereof

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Publication number
KR20170051835A
KR20170051835A KR1020150153238A KR20150153238A KR20170051835A KR 20170051835 A KR20170051835 A KR 20170051835A KR 1020150153238 A KR1020150153238 A KR 1020150153238A KR 20150153238 A KR20150153238 A KR 20150153238A KR 20170051835 A KR20170051835 A KR 20170051835A
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layer
sacrificial layer
sacrificial
structural
structural layer
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KR1020150153238A
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Korean (ko)
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김태현
조동일
홍석준
이민재
천홍진
박윤재
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에스케이텔레콤 주식회사
서울대학교산학협력단
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Priority to KR1020150153238A priority Critical patent/KR20170051835A/en
Publication of KR20170051835A publication Critical patent/KR20170051835A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00373—Selective deposition, e.g. printing or microcontact printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)

Abstract

The present embodiment provides a MEMS structure and a method of manufacturing the same that can control the interaction between the structure layer and the sacrificial layer by using a plurality of sacrificial layers and minimize the influence of the structure layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a MEMS structure using a plurality of sacrificial layers,

The present invention relates to a MEMS (Micro Electro-Mechanical System) structure and a manufacturing method thereof, and more particularly, to a MEMS structure using a sacrificial layer and a manufacturing method thereof.

The contents described in this section merely provide background information on the present embodiment and do not constitute the prior art.

Micro Electro-Mechanical System (MEMS) structures refer to fine devices such as sensors, actuators, microfluidics, and RF circuits fabricated on wafer substrates. Related products include printer heads, pressure sensors, acceleration sensors, and gyroscopes.

The main part of the MEMS structure is fabricated using a process similar to the semiconductor process. However, unlike a semiconductor integrated circuit fabricated by processing the plane of the structure layer, the MEMS structure also includes a process of forming and etching a sacrificial layer to form a three-dimensional shape. Specifically, it includes a process of depositing and patterning the sacrificial layer, a process of depositing and patterning the structure layer, and a process of removing the sacrificial layer. The process of removing the sacrificial layer is divided into dry etching (wet etching) and wet etching (wet etching).

When selecting the appropriate material to be used for the structure layer and the sacrificial layer to fabricate the MEMS structure using the sacrificial layer process, the etch selectivity of the sacrificial layer, the deposition temperature and subsequent process temperature of the sacrificial layer and the structure layer, The difference in thermal expansion coefficient and the hardness difference between the two materials should be considered together.

The etch selectivity is the rate at which different films are etched during dry or wet etching to remove the sacrificial layer. As the etching selectivity ratio increases, the sacrificial layer can be selectively removed without affecting the structure layer. Therefore, the structure layer and the sacrificial layer material and etching method should be determined.

The material of the structure layer and the sacrificial layer must be combined in consideration of the deposition temperature or the subsequent process temperature. At certain deposition temperatures, the structural and sacrificial layers must be compatible and able to withstand this. Also, materials with high deposition temperatures can not be used in processes with low thermal budgets.

1, which illustrates a single sacrificial layer, a MEMS structure 100 includes structure layers 120 and 150 and a sacrificial layer 130. A silicon oxide layer (Silicon Dioxide) is used to provide a channel or overhang When the structure layers 120 and 150 are fabricated, polysilicon, which is not a metal or an organic material, is used for the sacrifice layer 130.

The silicon oxide film structure layers 120 and 150 are deposited by a plasma enhanced chemical vapor deposition (PECVD) method. In this case, since the deposition temperature is higher than 350 ° C, the use of the metal sacrificial layer 130 may cause a problem due to thermal expansion. When the organic sacrificial layer 130 is used, the thermal stability is low, Can be decomposed. In addition, when the sacrificial layer 130 is polysilicon, the deposition temperature is higher than 580 ° C, and thus can not be used for a wafer having a low thermal budget.

The material of the structure layer and the sacrificial layer must be combined in consideration of the difference in thermal expansion coefficient between the structure layer and the sacrificial layer. Cracks and protrusion of the structure may occur. The thermal expansion coefficient of the wafer can also be considered here. For example, a silicon through-hole (TSV) technology is a technique for forming a micro via hole through a silicon wafer and filling an electrically conductive material in the via hole to form an electrical connection path directly inside the chip. Problems such as cracks and copper protrusion may occur due to a difference in thermal expansion coefficient between the silicon substrate and the silicon substrate.

The hardness difference between the structural layer and the sacrificial layer should also be considered. For example, when a chemical mechanical polishing (CMP) process is performed, a difference in hardness between the structural layer and the sacrifice layer may cause a dishing phenomenon.

The MEMS structure that solves the problems mentioned above has not been implemented yet.

The inventors of the present invention have recognized that when the materials of the structure layer and the sacrifice layer are combined, the deposition temperature, the thermal expansion coefficient, and the hardness of the structure layer and the sacrifice layer are taken into account, and various shapes To form a MEMS structure.

Embodiments of the present invention have a main object of providing a MEMS structure in which a plurality of sacrificial layers are formed which perform different functions from each other and have different physical properties, and a manufacturing method thereof.

Other and further objects, which are not to be described, may be further considered within the scope of the following detailed description and easily deduced from the effects thereof.

According to an aspect of this embodiment, there is provided a semiconductor device comprising: a first structure layer including an inner space part; a first sacrificial layer that fills a part of the inner space part and covers at least a part of a surface of the first structure layer; And a second sacrificial layer filling at least a portion of the surface of the first sacrificial layer, the first sacrificial layer having a difference in physical properties between the first structural layer and the second sacrificial layer Is reduced.

The embodiment of the MEMS structure may further include one or more of the following features.

A second structural layer covering at least a portion of a surface of the first structural layer and at least a portion of a surface of the second sacrificial layer.

Wherein the material forming the first structure layer is polysilicon; Amorphous silicon; A silicon nitride film; A silicon oxide film; Carbon compounds such as silicon carbide and octafluorocyclobutane; And metals such as aluminum, copper, tungsten, gold, and the like.

Wherein the material forming the first sacrificial layer or the second sacrificial layer is polysilicon; Amorphous silicon; A silicon oxide film; Carbon compounds such as octafluorocyclobutane; Polymer compounds such as photoresist and polyimide; And metals such as aluminum, copper, tungsten, and gold. The material forming the first structure layer and the material forming the second structure layer may be different from each other.

The surface energy of the first sacrificial layer and the surface energy of the second sacrificial layer may be different from each other.

The adhesive force between the first structural layer and the first sacrificial layer and the adhesive force between the first sacrificial layer and the second sacrificial layer may be different from each other.

The physical hardness of the first sacrificial layer and the physical hardness of the second sacrificial layer are different from each other and the physical hardness of the first structural layer and the physical hardness of the second sacrificial layer are similar to each other, The difference in physical hardness between the second sacrificial layer and the second sacrificial layer may be greater than the physical hardness difference between the first structural layer and the second sacrificial layer.

After the first sacrificial layer or at least a portion of the second sacrificial layer is removed, there may be no change in the shape of the first structural layer and the second structural layer.

Wherein after the at least a portion of the first sacrificial layer or the second sacrificial layer has been removed, the second structure layer is exposed to a second imaginary straight line, A part of the structure layer may have a shape protruding beyond the virtual straight line.

Further comprising a bottom layer to form the first structure layer, wherein the first structure layer covers at least a portion of a surface of the bottom layer, and wherein at least a portion of the first sacrificial layer or the second sacrificial layer is removed A portion of the second structural layer may have a shape spaced apart from a portion of the underlying layer.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, the method including forming and patterning a first structure layer including an inner space part, forming a first sacrificial layer (not shown) covering at least a part of a surface of the first structure layer And forming a second sacrificial layer covering at least a part of a surface of the first sacrificial layer, wherein the first sacrificial layer is formed on the first sacrificial layer, Wherein a difference in physical properties between the first structural layer and the second sacrificial layer is reduced.

As described above, according to the embodiments of the present invention, by using a plurality of sacrificial layers having different physical properties, it is possible to control the interaction between the structural layer and the sacrificial layer and to minimize the adverse effects of the structural layer.

According to embodiments of the present invention, by using a plurality of sacrificial layers, it is possible to prevent a crack phenomenon that may occur in the structural layer due to a difference in thermal expansion coefficient between the structural layer and the sacrificial layer in a high-temperature process.

According to the embodiments of the present invention, by using a plurality of sacrificial layers, it is possible to prevent the dishing phenomenon that may occur due to the hardness difference between the structure layer and the sacrificial layer in the polishing process.

According to embodiments of the present invention, a plurality of sacrificial layers can be used to manufacture a three-dimensional shape that is spaced or protruded without being restricted by factors considered when combining the material of the structure layer and the sacrificial layer.

Even if the effects are not expressly mentioned here, the effects described in the following specification which are expected by the technical characteristics of the present invention and their potential effects are handled as described in the specification of the present invention.

1 is a cross-sectional view exemplarily showing a MEMS structure using a single sacrificial layer.
2 is a view illustrating a MEMS structure having a protrusion.
3 is a cross-sectional view illustrating an exemplary first structural layer of a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention.
4 is a cross-sectional view illustrating an exemplary first sacrificial layer of a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention.
5 to 7 are cross-sectional views illustrating a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention.
8 is a cross-sectional view illustrating a MEMS structure having a protrusion.
9 is a view illustrating a MEMS structure having a beam structure spaced apart from the lower layer.
10 is a diagram illustrating a MEMS structure having a beam structure and a protrusion spaced from the lower layer.
11 is a flowchart illustrating a method of manufacturing a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Will be described in detail with reference to exemplary drawings.

For convenience of explanation, the MEMS structure 200 having the protrusions 250 illustrated in FIG. 2 will be described as an example, but the MEMS structure formed using a plurality of sacrificial layers according to the embodiments of the present invention is limited thereto But it can have various stereoscopic shapes.

3 is a cross-sectional view illustrating an exemplary first structural layer of a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention. As shown in FIG. 3, the first structural layer 320 covers at least a portion of the surface of the lower layer 310. 3, the first structural layer 320 may cover a portion of the top surface of the bottom layer 310, but the first structural layer 320 may cover the entire top surface of the bottom layer 310. The first structural layer 320 may cover all or a part of the side surface of the lower layer 310. In addition, the first structural layer 320 may cover the surface of another layer (not shown) including a portion of the surface of the lower layer 310. Means that the first structural layer 320 covers at least a portion of the surface of the bottom layer 310 so that the sacrificial layer described below covers at least a portion of the surface of the structural layer or that the structural layer covers at least a portion of the surface of the sacrificial layer It is applicable to cover.

The first structure layer 320 may be formed in a shape that can be separated from the lower layer 310. For example, the lower end surface of the first structural layer 320 may have a concavo-convex shape. For example, a sacrificial layer may be formed between the first structure layer 320 and the lower layer 310 to separate the first structure layer. Herein, the lower layer 310 refers to another layer capable of depositing the first structure layer 320, and the lower layer 310 may be a substrate, as well as another structure layer or a sacrifice layer. The first structure layer 320 includes an inner space portion 330.

4 is a cross-sectional view illustrating an exemplary first sacrificial layer of a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention. As shown in FIG. 4, the first sacrificial layer 430 covers at least a part of the surface of the first structural layer 420. The first sacrificial layer 430 fills a part of the inner space portion 440 of the first structure layer 420. The structure layer or the sacrificial layer is formed by depositing on a substrate, a structure layer, a sacrificial layer or the like. Deposition refers to the application of a thin film on the surface of an object. It is a concept including a coating, a spin on, a vacuum evaporation, a sputtering, an electroplating, to be. Deposition methods are classified into chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD). The chemical vapor deposition method is divided according to the process pressure, the condition of the source, the energy source, etc., and the physical vapor deposition method is divided according to the method of forming the vapor. In the embodiments of the present invention, various deposition methods can be used as needed.

5 to 7 are cross-sectional views illustrating a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention. 5, the MEMS structure 500 according to an exemplary embodiment of the present invention includes a first structure layer 520, a first sacrificial layer 530, and a second sacrificial layer 540. The first structure layer 320 described with reference to FIG. 3 and the first sacrificial layer 430 described with reference to FIG. 4 are deposited.

The second sacrificial layer 540 fills another portion of the inner space portion of the first structure layer 520. The second sacrificial layer 540 covers at least a part of the surface of at least one of the first structure layer 520 or the first sacrificial layer 530. Preferably, the second sacrificial layer covers at least a part of the surface of the first sacrificial layer. That is, a plurality of sacrificial layers may be formed in a multi-layered structure.

When fabricating the MEMS structure, it is necessary to select a material that satisfies a certain range depending on the physical properties of the material constituting the structure layer and the sacrificial layer, for example, the deposition temperature, the thermal expansion coefficient, and the like. Here, physical properties are divided into mechanical properties, physical properties, and chemical properties.

The structural layer comprising the MEMS structure must possess good mechanical, physical, and chemical properties. In other words, the structure layer should have low breaking stress, small creep and fatigue, high abrasion resistance, and low residual stress after fabrication.

Likewise, the sacrificial layer removed during fabrication of the MEMS structure must also possess good physical properties. For example, the sacrificial layer must have strong adhesive force with the structural layer, so that delamination between the layers should not occur during fabrication. In addition, the sacrificial layer should not cause cracks in the structural layer because the residual stress is small.

As the material of the MEMS structure, a silicon compound, a polymer compound, a metal, and a ceramic can be used. In order to satisfy the above-mentioned good physical properties, the material mainly used for the structure layer is polysilicon; Amorphous silicon; Silicon nitride (Silicon Nitride); Silicon Dioxide; High molecular materials such as polyimide; And metals such as aluminum, copper, tungsten, and gold.

Materials mainly used for the sacrificial layer include polysilicon; Amorphous silicon; A silicon oxide film; Organic materials such as amorphous carbon, hydrogenated amorphous carbon, photoresist, polymer, and polyimide; Aluminum, copper, and tungsten. The material that can be used for the structural layer and the sacrificial layer of the MEMS structure using a plurality of sacrificial layers according to the embodiment of the present invention is not limited thereto.

A combination of a structural layer and a sacrificial layer for manufacturing a MEMS structure will be described as an example.

First, a combination of a polysilicon structure layer and a silicon oxide film sacrificial layer can be mentioned. The polysilicon structure layer is deposited by low pressure chemical vapor deposition (LPCVD). The silicon oxide sacrificial layer is deposited by thermal oxidation or low pressure chemical vapor deposition. A fluoric acid solution is used as the etchant because it can dissolve the silicon oxide film without affecting the polysilicon. Since polysilicon and silicon oxide films are commonly used in semiconductor processing, deposition techniques using them are common and compatible with CMOS processes. Polysilicon also has excellent mechanical properties and can be used as a conductor or a semiconductor by doping impurities.

Another example is a combination of a silicon nitride film structure layer and a polysilicon sacrificial layer. The silicon nitride film structure layer is deposited by a low pressure chemical vapor deposition process. In this combination, wet etching is performed with an alkaline etching solution such as an aqueous solution of potassium hydroxide (Potassium Hydroxide), or dry etching is performed with this xenon difluoride gas.

Other examples include silicon; Polysilicon; There is a combination of a metal structure layer such as aluminum, copper, tungsten, or gold and an organic material sacrificial layer such as polyimide or amorphous hydrogenated carbon. The polyimide is deposited via spin coating, and amorphous hydrogenated carbons and the like are deposited via plasma chemical vapor deposition. The organic sacrificial layer can be dry etched using ashing using oxygen gas.

Another example is a combination of a metal structure layer and a metal sacrificial layer. Metals such as aluminum, copper, tungsten, and gold can be used both as a structural layer material and as a sacrificial layer material depending on the deposition order and etching order. However, when metal is used as the sacrificial layer material, attention must be paid to the difference between the thermal expansion coefficient and the subsequent high temperature process. The reason for this is that metal generally has a higher coefficient of thermal expansion than other materials and can expand seriously during high-temperature processing, resulting in serious damage to the structural layer.

The limitation of the material of the structure layer and the sacrificial layer can be overcome by using a plurality of sacrificial layers 530 and 540 according to the embodiments of the present invention. This is because the problem caused by the interaction between the structure layer 520 and the sacrificial layer 540 can be solved by using the sacrificial layer 530 performing other functions.

For this purpose, the physical properties of one sacrificial layer of the plurality of sacrificial layers must differ at least from those of the other sacrificial layer. In other words, the physical properties between the first sacrificial layer 530 and the second sacrificial layer 540 are different from each other. At least one of mechanical, physical, or chemical properties between the first sacrificial layer 530 and the second sacrificial layer 540 may be different from each other. Or the first sacrificial layer 530 and the second sacrificial layer 540 may have different molecular structures or crystal structures.

For example, the material forming the first structure layer 520, the first sacrificial layer 530, and the second sacrificial layer 540 may include at least one of a silicon compound, a polymer compound, and a metal, The physical properties of the layer 530 or the second sacrificial layer 540 may be different from those of the first structural layer 520.

When a plurality of sacrificial layers having different physical properties are used, the structural layer is less influenced by changes in the physical properties of the structural layer or the surrounding environment. For example, the first structural layer 520 can minimize damage even when the difference in thermal expansion coefficient between the first structural layer 520 and the second sacrificial layer 540 is large or when the structure is exposed to a high temperature in a subsequent process. The first sacrificial layer 530 sandwiched between the first structure layer 520 and the second sacrificial layer 540 suppresses the influence of the thermal stress generated when the second sacrificial layer 540 expands.

The surface energy of the first sacrificial layer 530 and the surface energy of the second sacrificial layer 540 may be different from each other. The adhesion between the first structure layer 520 and the first sacrificial layer 530 and the adhesion between the first sacrificial layer 530 and the second sacrificial layer 540 may be different from each other. If the adhesion between the first sacrificial layer 530 and the first structure layer 520 and the second sacrificial layer 540 is weak, the buffering action against the stress becomes more effective.

6 is different from the MEMS structure 500 shown in FIG. 5 in that the upper surface of the first structure 620 is exposed to the outside. This may be the case where the MEMS structure 600 is subjected to a polishing process or the first sacrificial layer 430 described with reference to FIG. 4 covers a part of the upper surface of the first structure 420.

If the polishing process is performed on the MEMS structure 600, the MEMS structure 600 has a smooth surface. A part of the surface of at least one of the first structural layer 420, the first sacrificial layer 430, or the second sacrificial layer 440 is planarized by using a chemical mechanical polishing (CMP) process, for example, can do.

The physical hardness of the first sacrificial layer 430 and the physical hardness of the second sacrificial layer 440 are different from each other and the physical hardness of the first structural layer 420 and the physical hardness of the second sacrificial layer 440 are similar to each other The difference in physical hardness between the first sacrificial layer 430 and the second sacrificial layer 440 may be larger than the physical hardness difference between the first structural layer 420 and the second sacrificial layer 440.

By using a plurality of sacrificial layers, it is possible to prevent a problem, for example, a dishing phenomenon that may occur due to a difference in physical properties between the structure layer and the sacrificial layer, for example, a hardness difference, during the polishing process. For example, when a single polyimide material is used as the sacrificial layers 430 and 440, a dishing phenomenon that may occur due to a difference in hardness between the first structural layer 420 and the sacrificial layers 430 and 440 may be caused by a difference in hardness Can be prevented by forming the second sacrificial layer for the polyimide sacrifice layer.

7, the MEMS structure 700 according to the present embodiment further includes a second structure layer 750 unlike the MEMS structures 500 and 600 exemplarily shown in FIGS. 5 and 6 can do.

The second structural layer 550 has various shapes. For example, the second structure layer 550 may be formed in a protruding shape. The second structural layer 550 covers at least a portion of the surface of the first structural layer.

The use of the plurality of sacrificial layers 730 and 740 can change the physical properties of the structure layers 720 and 750 and the second sacrificial layer 740 caused by environmental changes such as a high temperature process or a low temperature process, , For example, thermal stress or the like is suppressed, so that the structural layers 720 and 750 are not significantly damaged.

The first sacrificial layer 730 is made of a soft material so as to withstand the thermal stresses of the structure layers 720 and 750 and the second sacrificial layer 740. Also, the smaller the reactivity of the first sacrificial layer 730 with the structure layers 720 and 750 and the second sacrificial layer 740, the better. The first sacrificial layer 730 can effectively perform the buffering action against the stress as the adhesion strength with the structural layers 720 and 750 and the second sacrificial layer 740 becomes weak.

For example, the first structure layer 720 may be a silicon oxide film, the first sacrificial layer 730 may be polyimide, and the second sacrificial layer 740 may be copper. Since polyimide can withstand relatively large stresses, the interaction between the silicon oxide film and copper can be mitigated. On the other hand, if only one copper is used for the sacrificial layers 730 and 740, cracks may be generated in the structural layers 720 and 750 due to the thermal stress generated in the process of depositing the second structural layer 750.

In addition, unlike a single sacrificial layer, the use of multiple sacrificial layers can result in fewer material choices. For example, if copper and polyimide, each having a low deposition temperature, are used for the plurality of sacrificial layers 730 and 740 without using only one polysilicon as the sacrificial layers 730 and 740, the structure layers 720 and 750 ) Or a substrate can be used.

Each of the plurality of sacrificial layers also functions to support another layer. Each of the plurality of sacrificial layers can perform various functions in addition to the supporting function. For example, there is a function of protecting other layers contacted, a function of buffering the influence due to a specific environment, and a function of controlling the adhesion with another layer.

On the other hand, each of the plurality of sacrificial layers may independently perform different functions. For example, the second sacrificial layer 740 may serve to support the second structure layer 750. While the first sacrificial layer 730 may function to control the interaction between the first structural layer 720 and the second sacrificial layer 740.

The plurality of sacrificial layers functioning may be etched. For example, all or a part of at least one of the first sacrificial layer 730 and the second sacrificial layer 740 may be etched.

When wet etching is employed, an etchant having a high etch selectivity to the first sacrificial layer 730 and the second sacrificial layer 740 is used. This allows the sacrificial layers 720 and 730 to be cleanly removed without affecting the structure layers 720 and 750.

8 is a cross-sectional view illustrating a MEMS structure having a protrusion. Referring to FIG. 8, there is no change in the shape of the first structural layer and the second structural layer after at least a portion of the first sacrificial layer or the second sacrificial layer is removed. After at least a portion of the first sacrificial layer or the second sacrificial layer is removed, a second structural layer (not shown) is formed on an imaginary straight line 870 that abuts a portion of the first structural layer as viewed in any cross- A portion of the protruding portion 830 protrudes beyond the imaginary straight line 870. The MEMS structure 820 has a protrusion 860 spaced 840 from the bottom layer 810. The protrusion 860 of the MEMS structure 820 may have protrusions 850 spaced apart from other protrusions of the MEMS structure 830, but the shape of the MEMS structure is not limited thereto.

The MEMS structure according to the present embodiment can use a plurality of sacrificial layers to produce a three-dimensional shape that is spaced apart or protruded without being restricted by factors considered when combining the material of the structure layer and the sacrificial layer.

The MEMS structure may further comprise a bottom layer for forming the first structural layer. The underlying layer may be a substrate, as well as other structural layers or sacrificial layers. The first structural layer covers at least a part of the surface of the lower layer. After at least a portion of the first sacrificial layer or the second sacrificial layer is removed, the MEMS structure may have a shape in which a portion of the second structural layer is spaced from a portion of the underlying layer.

9 is a view illustrating a MEMS structure having a beam structure spaced apart from a lower layer. The MEMS structure illustrated in FIG. 9 has a shape including a beam connecting the separated second structure layer 930, unlike the MEMS structure described with reference to FIG. Referring to FIG. 9, beam 940 is part of patterned second structure layer 930. By removing the first sacrificial layer or the second sacrificial layer supporting the beam, an internal space portion 950 is formed in the MEMS structure. In other words, beam 940 is spaced from bottom layer 910. This is merely an example of a MEMS structure that can be manufactured using this embodiment, but the shape thereof is not limited thereto.

The MEMS structure according to this embodiment can use a plurality of sacrificial layers to produce a three-dimensional shape that is spaced apart from the underlying layer, e.g., the substrate, without being limited by the factors considered when combining the material of the structure layer and the sacrificial layer.

10 is a diagram illustrating a MEMS structure having a beam structure and a protrusion spaced from the lower layer. The MEMS structure illustrated in Fig. 10 has a shape including both a protrusion and a spaced beam, unlike the MEMS structure illustrated with reference to Fig. Referring to FIG. 10, by making the pattern boundary of the first structure layer 1020 different from the pattern boundary of the second structure layer 1030, the MEMS structure includes the protrusions 1070.

The beam 1060 is part of the patterned second structure layer 1030. The inner space portion 1050 is formed by removing the first sacrificial layer or the second sacrificial layer supporting the beam. In other words, the beam is spaced from the bottom layer 1010. This is merely an example of a MEMS structure that can be manufactured using this embodiment, but the shape thereof is not limited thereto.

The MEMS structure according to the present embodiment can use a plurality of sacrificial layers to produce spaced and protruding three-dimensional shapes without being restricted by the factors considered when combining the material of the structure layer and the sacrificial layer.

11 is a flowchart illustrating a method of manufacturing a MEMS structure using a plurality of sacrificial layers according to an embodiment of the present invention. This method corresponds to the method of manufacturing the MEMS structure described with reference to FIG.

In step S1110, a first structure layer is formed and patterned. In step S1110, the first structural layer is deposited on the surface of the load layer. The load layer may be a substrate, as well as other structure layers or sacrificial layers.

In step S1120, a first sacrificial layer covering at least a part of the surface of the first structure layer is formed. In step S1120, a first sacrificial layer for controlling the interaction between the first structural layer and the second sacrificial layer is deposited.

In step S1130, a second sacrificial layer covering at least a part of the surface of at least one of the first structural layer or the first sacrificial layer is formed. The physical properties of the first sacrificial layer and the second sacrificial layer are different from each other. A plurality of sacrificial layers having different physical properties can perform different functions. The second sacrificial layer may serve to support the second structural layer to be deposited on the surface of the first structural layer on which the first sacrificial layer is deposited.

In some cases, a third sacrificial layer, a fourth sacrificial layer, or the like may be additionally formed in addition to the second sacrificial layer.

Each of the processes S1110, S1120, and S1130 may further include the step of patterning the deposited layer after depositing one layer as required. Each of the processes S1110, S1120, and S1130 may further include a process of etching the deposited or patterned layer as needed.

The method of manufacturing the MEMS structure according to the present embodiment may further include a step of polishing the surface of the MEMS structure, unlike the method of manufacturing the MEMS structure described with reference to FIG. The manufacturing method of the MEMS structure may include a step of polishing at least one surface of the first structural layer, the first sacrificial layer, and the second sacrificial layer. For example, a chemical mechanical polishing process may be used to planarize at least a portion of the surface of all or a portion of the first structural layer, the first sacrificial layer, or the second sacrificial layer. This corresponds to the process of making the MEMS structure described with reference to FIG. 5 as the MEMS structure described with reference to FIG. This polishing process corresponds to a process for more effectively depositing the second structural layer.

The manufacturing method of the MEMS structure according to this embodiment can prevent the dishing phenomenon that may occur due to the difference in hardness between the structural layer and the sacrificial layer in the polishing process by using a plurality of sacrificial layers.

The method of manufacturing the MEMS structure according to the present embodiment may further include a step of forming the second structure layer, unlike the method of manufacturing the MEMS structure described with reference to FIG. In the method of manufacturing a MEMS structure, a process of forming a second structure layer covering at least a part of the surface of the first structure layer may be included. This corresponds to the process of manufacturing the MEMS structure described with reference to FIG. In this process, a second structure layer is deposited on the surface of all or a portion of the substrate, the first structural layer, the first sacrificial layer, or the second sacrificial layer.

By using a plurality of sacrificial layers, a manufacturing method of a MEMS structure according to the present embodiment can prevent a crack phenomenon that may occur due to a difference in thermal expansion coefficient between a structural layer and a sacrificial layer in a high temperature process.

The method of fabricating a MEMS structure according to embodiments of the present invention may further include a step of etching the sacrificial layer. In this process, at least a part of at least one of the first sacrificial layer and the second sacrificial layer is etched.

In the method of fabricating a MEMS structure according to embodiments of the present invention, a process of forming a structure between a process of forming a structure and a process of etching a sacrifice layer may be added. One or more structural layers or sacrificial layers may be additionally formed.

As a result of experiments conducted by the inventors to confirm whether a plurality of sacrificial layers having different physical properties are more effective than when using a single sacrificial layer, a metal having a high thermal expansion coefficient (for example, copper) is exemplarily used as a sacrificial layer And a structure having a low thermal budget can be used to fabricate a MEMS structure having a cracked or protruded structure.

For example, in the experiment, the inventors deposited the first structural layer at a temperature of 350 ° C in a PECVD method to a thickness of 10 micrometers (μm). The first structural layer was patterned and dry etched. The first sacrificial layer was deposited to a thickness of 1 micrometer ([mu] m). The second sacrificial layer of copper was electroplated to a thickness of 20 micrometers (μm). Thereafter, the second structure layer was deposited to a thickness of 4 micrometers (μm) at 350 ° C by PECVD. Polishing process. Finally, the sacrificial layer was etched.

According to the experimental results, it was possible to fabricate a distance of 5-20 micrometers (μm) between the substrate and the second structure layer using a structure layer having a low thermal budget using a plurality of sacrificial layers having different physical properties.

As the material used in the experiment, the substrate is made of silicon, the structure layer is made of silicon oxide, the first sacrificial layer is made of polyimide, perillin, octafluorocyclobutane, and the second sacrificial layer is made of copper However, the present invention is not limited thereto, and the MEMS structure according to embodiments of the present invention may be formed using various materials.

11, it is described that each process is sequentially executed. However, those skilled in the art will appreciate that those skilled in the art can change and execute the procedure described in FIG. 11 without departing from the essential characteristics of the embodiments of the present invention Or may be variously modified and modified by executing one or more processes in parallel or by adding other processes.

The present embodiments are for explaining the technical idea of the present embodiment, and the scope of the technical idea of the present embodiment is not limited by these embodiments. The scope of protection of the present embodiment should be construed according to the following claims, and all technical ideas within the scope of equivalents thereof should be construed as being included in the scope of the present invention.

As described above, in the embodiments, a plurality of sacrificial layers are used to control the interaction between the structure layer and the sacrificial layer, and the influence of the structure layer is minimized, So that it is a useful invention.

100, 200, 500, 600, 700, 820, 830: MEMS structure
110, 210, 310, 810, 910, 1010:
120, 320, 420, 520, 620, 720, 920, 1020:
150, 750, 930, 1030: second structure layer 940, 1060: beam
130, 430, 530, 630, 730: First sacrificial layer 540, 640, 740: Second sacrificial layer
330, 440, 950, 1050: inner space 250, 860, 1070:

Claims (14)

A first structure layer including an inner space portion;
A first sacrificial layer filling at least a part of the surface of the first structural layer and filling a part of the space of the internal space part; And
A second sacrificial layer covering at least a part of the surface of the first sacrificial layer,
≪ / RTI >
Wherein the first sacrificial layer reduces physical property differences between the first structural layer and the second sacrificial layer. The method according to claim 1,
And a second structural layer covering at least a portion of a surface of the first structural layer and at least a portion of a surface of the second sacrificial layer. 3. The method according to claim 1 or 2,
Wherein the material forming the first structure layer is polysilicon; Amorphous silicon; A silicon nitride film; A silicon oxide film; Carbon compounds such as silicon carbide and octafluorocyclobutane; And at least one of metals such as aluminum, copper, tungsten, gold, and the like. 3. The method according to claim 1 or 2,
Wherein the material forming the first sacrificial layer or the second sacrificial layer is polysilicon; Amorphous silicon; A silicon oxide film; Carbon compounds such as octafluorocyclobutane; Polymer compounds such as photoresist and polyimide; And at least one of metals such as aluminum, copper, tungsten, and gold,
Wherein the material forming the first structure layer and the material forming the second structure layer are different from each other. 3. The method according to claim 1 or 2,
Wherein the surface energy of the first sacrificial layer and the surface energy of the second sacrificial layer are different from each other. 3. The method according to claim 1 or 2,
Wherein the adhesive force between the first structural layer and the first sacrificial layer and the adhesive force between the first sacrificial layer and the second sacrificial layer are different from each other. 3. The method according to claim 1 or 2,
The physical hardness of the first sacrificial layer and the physical hardness of the second sacrificial layer are different from each other and the physical hardness of the first structural layer and the physical hardness of the second sacrificial layer are similar to each other,
Wherein a difference in physical hardness between the first sacrificial layer and the second sacrificial layer is greater than a physical hardness difference between the first structural layer and the second sacrificial layer. 3. The method of claim 2,
Wherein after the at least a portion of the first sacrificial layer or the second sacrificial layer is removed, there is no change in the shape of the first structural layer and the second structural layer. 3. The method of claim 2,
Wherein after the at least a portion of the first sacrificial layer or the second sacrificial layer has been removed, the second structure layer is exposed to a second imaginary straight line, Wherein a part of the structure layer has a shape protruding beyond the imaginary straight line. 3. The method of claim 2,
Further comprising a bottom layer for forming the first structural layer,
Wherein the first structural layer covers at least a portion of a surface of the lower layer and wherein after at least a portion of the first sacrificial layer or the second sacrificial layer is removed a portion of the second structural layer is spaced apart from a portion of the lower layer And the second portion has a shape that is different from the first portion. Forming and patterning a first structure layer to include an inner space portion;
Forming a first sacrificial layer covering at least a part of a surface of the first structural layer, filling a part of the space of the internal space part; And
Forming a second sacrificial layer filling at least a part of the surface of the first sacrificial layer and filling another part of the space of the internal space part;
≪ / RTI >
Wherein the first sacrificial layer reduces a physical property difference between the first structural layer and the second sacrificial layer. 12. The method of claim 11,
And forming and patterning a second structural layer covering at least a portion of a surface of the first structural layer and at least a portion of a surface of the second sacrificial layer. 13. The method according to claim 11 or 12,
And polishing the surface of at least one of the first structural layer, the first sacrificial layer, and the second sacrificial layer. 13. The method according to claim 11 or 12,
And etching at least a portion of at least one of the first sacrificial layer and the second sacrificial layer.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102122033B1 (en) 2019-05-28 2020-06-11 에스케이씨코오롱피아이 주식회사 Polyamic acid Composition for Packaging Electronic Component and Method for Packaging Electronic Component by Using the Same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102122033B1 (en) 2019-05-28 2020-06-11 에스케이씨코오롱피아이 주식회사 Polyamic acid Composition for Packaging Electronic Component and Method for Packaging Electronic Component by Using the Same

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