KR20170051804A - Low Voltage Operated Organic Memory Device Using Insulator Polymer - Google Patents
Low Voltage Operated Organic Memory Device Using Insulator Polymer Download PDFInfo
- Publication number
- KR20170051804A KR20170051804A KR1020150152901A KR20150152901A KR20170051804A KR 20170051804 A KR20170051804 A KR 20170051804A KR 1020150152901 A KR1020150152901 A KR 1020150152901A KR 20150152901 A KR20150152901 A KR 20150152901A KR 20170051804 A KR20170051804 A KR 20170051804A
- Authority
- KR
- South Korea
- Prior art keywords
- pva
- molecular weight
- memory device
- gate insulating
- insulating layer
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title description 6
- 239000012212 insulator Substances 0.000 title description 5
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000002861 polymer material Substances 0.000 claims description 15
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 11
- 230000005055 memory storage Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 9
- 229920003023 plastic Polymers 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007334 memory performance Effects 0.000 description 4
- 238000004390 Auger electron microscopy Methods 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001355 polarised Fourier transform infrared spectroscopy Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H01L51/0512—
-
- H01L51/0558—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/1307—Organic Field-Effect Transistor [OFET]
Abstract
A low-voltage driving organic memory device comprising a gate electrode, a channel layer, a source and a drain electrode, and a gate insulating layer, wherein the gate insulating layer comprises a poly (vynyl alchohol) Characterized in that the molecular weight of the PVA is selected according to the operating characteristics of the memory element.
According to the present invention, since there is no difficulty in solution process, it is applicable to an inexpensive and lightweight plastic substrate, and another memory market can be formed.
Description
BACKGROUND OF THE
Organic memory devices are of interest as compared to conventional inorganic memory devices in that a low cost plastic memory module can be fabricated using a large area roll and roll coating process. Organic semiconductors have a fundamental limitation from the viewpoint of flexibility due to their hard crystal structure, and obtaining a flexible plastic memory based on organic memory devices is very important in the production of practical flexible electronic systems. Furthermore, the performance of organic memory devices can be tailored by applying various forms of organic semiconductors manufactured through organic synthesis and modification / mixing processes.
So far, two organic memory devices, resistive and transistor-type, have been studied extensively due to the potential of easy fabrication procedures that enable low cost memory module fabrication. A resistor type organic memory device has a diode structure having two electrodes, whereas a transistor type has three electrodes mainly. Resistive type organic memory devices have memory performance primarily dependent on charge transport and / or physical leakage paths. In particular, resistive-type organic memory devices require additional transistor components to actively drive more than a million memory cells in the memory module, which increases manufacturing costs. Transistor-type organic memory devices, on the other hand, are already considered as one of the simplest and most cost-effective memory devices for flexible plastic memory modules in the future of the flexible electronics era because they preserve transistors for active operation. Transistor type organic memory devices have been reported to have memory performance from ferroelectric polymers, metal nanoparticles or charge trap layers, polymer energy well structures, and the like.
However, most transistor-type organic memory devices have been reported to have disadvantages of high driving voltage and low storage stability characteristics in spite of well-implemented basic memory performance in the transistor structure. Therefore, for further consideration for the commercialization of transistor-type organic memory devices, it is very important that both low-voltage driving and high storage characteristics can be obtained simultaneously. Particularly for mobile applications, the first priority is low-power consumption as well as stability.
SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art as described above, and it is an object of the present invention to provide a gate insulator, which uses a polymer material and which can be driven at a low voltage by suitably selecting the molecular weight of the polymer material, To be able to do so.
According to an aspect of the present invention, there is provided a low-voltage driving organic memory device including a gate electrode, a channel layer, a source and a drain electrode, and a gate insulating layer, wherein the molecular weight of the PVA is selected according to operating characteristics of the memory device.
When the memory storage characteristics are considered, the molecular weight of the PVA is selected in the range of 80 to 200 kDa, and when the memory window characteristic is considered, the molecular weight of the PVA is preferably selected in the range of 1 to 50 kDa.
The channel layer is preferably poly (3-hexylthiophene) (P3HT), and the thickness of the gate insulating layer with respect to the channel layer thickness is preferably 3 to 5 times.
When the molecular weight of the PVA is in the range of 80 to 200 kDa, it is more preferable that the gate insulating layer is formed with an oriented hydrograph to the out-of-plane direction.
According to another aspect of the present invention, there is provided a low voltage driving organic memory device including a gate electrode, a channel layer, a source and a drain electrode, and a gate insulating layer, wherein the gate insulating layer is formed of a polymer material having a dielectric constant of 3 to 6 And a molecular weight of the polymer material is selected according to an operation characteristic of the memory device.
According to the present invention, since there is no difficulty in solution process, it is applicable to an inexpensive and lightweight plastic substrate, and another memory market can be formed.
1 shows a structure of a transistor type organic memory device having a gate insulating layer made of a polymer material.
FIG. 1B shows the light absorption spectrum of a PVA layer coated on an ITO-glass substrate by PVA molecular weight.
1C is a cross-sectional view of a transistor-type organic memory device having a gate insulating layer made of a polymer material.
2 is a graph showing output characteristics of an organic memory device according to PVA molecular weight.
FIG. 3 is a graph showing the migration characteristics of the drain current value according to the gate voltage change in the backward sweep and the forward sweep according to the PVA molecular weight.
FIG. 4A is a graph showing the hole mobility of an organic memory device as a function of PVA molecular weight, and FIG. 4B is a graph showing difference in threshold voltage and threshold voltage difference when V = -1V as a function of PVA molecular weight.
5A and 5B are 3D AFM images and 1D GIXD profiles in the out-of-plane direction of a PVA film coated on an ITO-glass substrate, respectively.
6 is an AEI (Auger Electron Microscope) image for a PVA layer coated on an ITO-glass substrate.
Figure 7a shows the permittivity of the PVA layer as a function of PVA molecular weight and Figure 7b is the P-polarized FT-IR absorption spectrum of the PVA layer.
Figure 8 shows the proposed orientation of the hydroxyl group (OH) in the PVA layer during operation of the organic memory device, wherein (a) is a whole molecular PVA and (b) is a polymer PVA.
9 shows the WORM operation according to the PVA molecular weight.
FIG. 10 shows storage characteristics of an organic memory device according to the application of a continuous write-read-clear-read cycle.
In the present invention, the inventors have adopted a high molecular weight poly (vynyl alchohol) (PVA) gate insulating layer in a transistor type organic memory device having a poly (3-hexylthiophene) (P3HT) channel layer, (Less than 4% after 10,000 cycles). The detailed effect of PVA molecular weight was investigated using PVA polymers with molecular weights of four different weight averages (9.5, 40.5, 93.5 166 kDa). The trend of device performance to molecular weight can be analyzed by various analyzes such as atomic force microscopy (AFM), Auger electron microscopy (AEM), polarized Fourier transform infrared spectroscopy (FT-IR) and syncrotron radiation grazing incidence X-ray diffraction / Measurement technique.
1B shows a light absorption spectrum of a PVA layer coated on an ITO-glass substrate by molecular weight of PVA, Fig. 1C shows a light absorption spectrum of a PVA layer coated on an ITO- Sectional view of a transistor type organic memory device having a gate insulating layer made of a polymer material.
In the organic memory device according to the present invention, a patterned ITO layer coated on a glass substrate was used as a gate electrode, and the source and drain electrodes were formed of nickel (
2 is a graph showing output characteristics of an organic memory device according to PVA molecular weight.
A transistor type organic memory device having a PVA gate insulating layer thus fabricated was first subjected to an output test by a sweeping drain voltage (VD) at a fixed gate voltage (VG). As shown in Figure 2, all devices exhibit P-type transistor characteristics with distinct drain current (ID) saturation in the output curve at low voltage (VD < -5V) As shown in Fig. Interestingly, even though the sweep (forward and backward) range of V D is the same for all devices, the degree of hysteresis increases at high | V G | regardless of the PVA molecular weight. This result indicates that the hysteresis of the device is sensitively affected by the gate voltage (V G ) rather than the drain voltage (V D ), indicating gate control hysteresis. In particular, higher PVA molecular weights represent lower drain current values (ID = -760 nA at 9.5 kDa, ID = -46.8 nA at 166 kDa when VG = VD = -5 V) at the same voltage conditions, It is concluded that the transistor-type organic memory device having a high molecular weight is strongly influenced by the PVA molecular weight.
FIG. 3 is a graph showing the migration characteristics of the drain current value according to the gate voltage change in the backward sweep and the forward sweep according to the PVA molecular weight.
Next, the migration characteristics of the transistor type organic memory device having the PVA gate insulating layer were investigated by sweeping VG at the fixed VD. As shown in Fig. 3, the drain current ID gradually increased in the forward sweep regardless of the PVA molecular weight as the gate voltage VG increased from -5V to -5V at fixed drain voltages (-1V and -3V) . It should be noted that the on / off ratio (I D, ON / I D, OFF ) is in the order of 10 4 to 10 5 . However, the drain current at the backward sweep (5V at V G = -5V) is much higher than at the lower drain voltage (-1V) for all devices than in the forward sweep.
This result indicates that the PVA layer induces significant hysteresis in the current transistor structure regardless of molecular weight. Looking closely at the movement curve, it can be seen that the gate voltage has a maximum drain current value at -5 V, which is relatively higher at lower molecular weights than at higher molecular weights, basically corresponding to the output curve of FIG.
Figure 4a is also a function of molecular weight PVA hole mobility of the organic memory device, Figure 4b is a graph showing the threshold voltage difference between the difference value and the write of the drain current when the V G = -1V as a function of the molecular weight of PVA.
From the shift curve in FIG. 3, the hole mobility (μh) of the device in the saturated state is calculated using Equation (1).
Here, L, W, and C i represent the length, the channel width, and the capacitance of the gate insulator, respectively. As shown in FIG. 4A, the highest hole mobility was obtained in the device with the lowest molecular weight PVA regardless of the sweep direction, thereby allowing higher drain currents to be measured in PVA of low molecular weight in the output and movement curves Able to know. Here, the relatively low hole mobility in the backward sweep as compared to the forward sweep can contribute to delayed hole transport due to the filled holes in the forward sweep, which can be attributed to the transistor type organic memory having the PVA gate insulating layer of the present invention This can be one of the reasons why a remarkable hysteresis is obtained in the device.
As shown in FIG. 4B, the difference between the drain current (I D ) and the threshold voltage (V TH ) between the forward and backward sweeps is relatively higher in the low molecular weight PVA, Indicating that a window can be obtained.
5A and 5B show 3D AFM images and 1D GIXD profiles in the out-of-plane (OOP) direction of a PVA film coated on an ITO-glass substrate, 7A shows the permittivity of the PVA layer as a function of the molecular weight of PVA, Fig. 7B shows the P-polarized FT-IR absorption spectrum of the PVA layer, Fig. 8 shows the behavior of the organic memory device in the AEI (Auger Electron Microscope) (OH) in the PVA layer at (a) is low molecular PVA and (b) is for polymer PVA.
In order to understand the different performance of the transistor type organic memory device having a PVA gate insulating layer against the PVA molecular weight, the nanostructures of the PVA layer were investigated with AFM, AEM and GIXD measurements. As shown in FIG. 5A, a typical surface nanostructure was measured for the PVA layer, with very slight surface roughness changes from 0.36 nm (9.5 kVa) to 0.32 nm (166 kDa). Also, as can be seen from the AEI image of FIG. 6, it was found that the hydroxy groups in the PVA layer were randomly distributed without a specific set regardless of the molecular weight of the PVA. However, the Debye ring for the (101) diffraction from the 2D GIXD image in Figure 5b is higher in the PVA layer having a higher molecular weight. This result means that a higher degree of crystallinity is produced in the PVA layer having a higher molecular weight.
The great anisotropy at (101) intensity between out-of-plane (OOP) and in-plane (IP) directions is that the PVA chain stacking, regardless of PVA molecular weight, In the out-of-plane direction. In addition, it has been found that higher isotropy is produced in the PVA layer having a higher molecular weight in the degree of crystallinity between in-plane and in-plane directions. When considering the PVA chain stacking in the crystal structure, the hydroxyl group orientation (OH) group is more preferable in the in-plane direction for the PVA layer having a high molecular weight. Since the orientation of the hydroxyl group greatly affects the polarization rate (dielectric constant) in the out-of-plane (thickness) direction of the PVA layer and is very important in the gate-control operation of the transistor, The orientation may be one of the clues as to why the transistor performance (drain current) is degraded in the case of high molecular weight PVA.
As shown in FIG. 7A, in order to demonstrate the change of the dielectric constant according to the PVA molecular weight, a simple parallel planar device having a PVA layer inserted between two electrodes was fabricated. The measurement results show that the dielectric constant in the out-of-plane direction is actually higher in a PVA having a low molecular weight (see FIG. 6A). This result is further supported by a polarized FT-IR measurement that better shows the hydroxyl group oriented in the out-of-plane direction of the PVA layer with low molecular weight (Fig. 6B). The proportion of hydroxy groups oriented in the outward direction for all hydroxyl groups was 52% (9.5 kDa), 24% (40.5 kDa), 17% (93.5 kDa) and 7% (166 kDa). It can be concluded that, due to the orientation of the hydroxyl groups as shown in Fig. 8, the molecular weight of PVA strongly affects the performance of transistor-type organic memory devices with PVA gate insulating layers.
FIG. 9 shows WORM operation according to PVA molecular weight, and FIG. 10 shows storage characteristics of an organic memory device by applying a continuous write-read-clear-read cycle.
In conclusion, the transistor-type organic memory device with the PVA gate insulating layer of the present invention tested the memory function to find the optimal molecular weight for durable memory devices. As shown in FIG. 9, a write-once-read-many (WORM) operation has been successfully performed in all devices regardless of the molecular weight. These results indicate that all devices of the present invention actually function as non-volatile memory. It should be noted here that the drain current level is relatively low for high molecular weight PVA, which can help in the realization of low power plastic memory devices. Next, a continuous full-cycle operation of writing-reading-erasing-reading (WRER) at room temperature is applied to the transistor type organic memory device having the same PVA gate insulating layer, . Interestingly, relatively unstable memory characteristics were measured in a write-read operation in a device with a low molecular weight (9.5 kDa) PVA layer. However, a device with a high molecular weight (166 kDa) PVA layer showed extremely stable memory performance even after 10,000 cycles. The change in the drain current level at a write operation at the -5V gate voltage was only 0.2% at 4.2% and the read high level at the -1V gate voltage (R1). On the other hand, the average fluctuation in all WRER events was less than 4% after 10,000 cycles. Therefore, it has been concluded that high molecular weight memory devices with durability are more advantageous due to their excellent retention properties as well as low power consumption. Low molecular weight PVA, on the other hand, is suitable as a switching application for high current levels.
Claims (12)
Wherein the gate insulating layer is made of PVA (poly (vynyl alchohol)), and the molecular weight of the PVA is selected according to the operation characteristics of the memory device.
Wherein the molecular weight of the PVA is selected in the range of 80 to 200 kDa when the memory storage property is considered.
Wherein when the memory window characteristic is considered, the molecular weight of the PVA is selected in the range of 1 to 50 kDa.
Wherein the channel layer is poly (3-hexylthiophene) (P3HT).
Wherein a thickness of the gate insulating layer with respect to the channel layer thickness is 3 to 5 times.
Wherein when the molecular weight of the PVA is in the range of 80 to 200 kDa, the gate insulating layer is formed with an oriented hydrograph to an out-of-plane direction.
Wherein the gate insulating layer is formed of a polymer material having a dielectric constant of 3 to 6, and the molecular weight of the polymer material is selected according to operation characteristics of the memory device.
Wherein the molecular weight of the polymer material is selected in the range of 80 to 200 kDa when the memory storage characteristic is considered.
Wherein when the memory window characteristic is considered, the molecular weight of the polymer material is selected in the range of 1 to 50 kDa.
Wherein the channel layer is poly (3-hexylthiophene) (P3HT).
Wherein a thickness of the gate insulating layer with respect to the channel layer thickness is 3 to 5 times.
Wherein when the molecular weight of the polymer material is in the range of 80 to 200 kDa, the gate insulating layer is formed with an oriented hydrograph in an out-of-plane direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150152901A KR101963412B1 (en) | 2015-11-02 | 2015-11-02 | Low Voltage Operated Organic Memory Device Using Insulator Polymer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150152901A KR101963412B1 (en) | 2015-11-02 | 2015-11-02 | Low Voltage Operated Organic Memory Device Using Insulator Polymer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170051804A true KR20170051804A (en) | 2017-05-12 |
| KR101963412B1 KR101963412B1 (en) | 2019-03-29 |
Family
ID=58740698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150152901A KR101963412B1 (en) | 2015-11-02 | 2015-11-02 | Low Voltage Operated Organic Memory Device Using Insulator Polymer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101963412B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210119751A (en) | 2020-03-25 | 2021-10-06 | 경북대학교 산학협력단 | Nonvolatile memory device and method for producing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101146979B1 (en) | 2005-11-28 | 2012-05-23 | 삼성모바일디스플레이주식회사 | Organic memory device |
| KR101234225B1 (en) | 2011-04-26 | 2013-02-18 | 국민대학교산학협력단 | flexible organic memory device and method of fabricating the same |
-
2015
- 2015-11-02 KR KR1020150152901A patent/KR101963412B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101146979B1 (en) | 2005-11-28 | 2012-05-23 | 삼성모바일디스플레이주식회사 | Organic memory device |
| KR101234225B1 (en) | 2011-04-26 | 2013-02-18 | 국민대학교산학협력단 | flexible organic memory device and method of fabricating the same |
Non-Patent Citations (4)
| Title |
|---|
| IEEE TRANSACTIONS ON ELECTRON DEVICES, 59, 1529-1533, 2012* * |
| Japanese Journal of Applied Physics, 53, 031601, 2014* * |
| Polymer Science and Technology, 23, 154-163, 2012 * |
| Thin Solid Films, 568, 111-116, 2014* * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210119751A (en) | 2020-03-25 | 2021-10-06 | 경북대학교 산학협력단 | Nonvolatile memory device and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101963412B1 (en) | 2019-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhou et al. | Recent advances of flexible data storage devices based on organic nanoscaled materials | |
| Bertolazzi et al. | Nonvolatile memories based on graphene and related 2D materials | |
| Li et al. | High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers | |
| Lipatov et al. | Optoelectrical Molybdenum Disulfide (MoS2) Ferroelectric Memories | |
| Han et al. | Towards the development of flexible non‐volatile memories | |
| Tian et al. | Tunnel electroresistance through organic ferroelectrics | |
| Yamada et al. | Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions | |
| Xu et al. | Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors | |
| Chanthbouala et al. | Solid-state memories based on ferroelectric tunnel junctions | |
| Park et al. | Control of thin ferroelectric polymer films for non-volatile memory applications | |
| Kang et al. | Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals | |
| Song et al. | Speed up ferroelectric organic transistor memories by using two-dimensional molecular crystalline semiconductors | |
| Xia et al. | Epitaxy of ferroelectric P (VDF-TrFE) films via removable PTFE templates and its application in semiconducting/ferroelectric blend resistive memory | |
| US10163932B1 (en) | Memory device based on heterostructures of ferroelectric and two-dimensional materials | |
| Dhar et al. | Threshold voltage shifting for memory and tuning in printed transistor circuits | |
| Goh et al. | Selector-less ferroelectric tunnel junctions by stress engineering and an imprinting effect for high-density cross-point synapse arrays | |
| US9318596B2 (en) | Ferroelectric field-effect transistor | |
| Hwang et al. | Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation | |
| Pei et al. | pJ-level energy-consuming, low-voltage ferroelectric organic field-effect transistor memories | |
| Lu et al. | Tunneling hot spots in ferroelectric SrTiO3 | |
| Thuau et al. | Mechanical strain induced changes in electrical characteristics of flexible, non-volatile ferroelectric OFET based memory | |
| KR20160145690A (en) | Polar elastomers for high performance electronic and optoelectronic devices | |
| Laudari et al. | Tuning charge transport in PVDF-based organic ferroelectric transistors: status and outlook | |
| JP2011523783A (en) | Ferroelectric organic memory operating at very low voltage | |
| Martínez-Tong et al. | Laser fabrication of polymer ferroelectric nanostructures for nonvolatile organic memory devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application | ||
| J201 | Request for trial against refusal decision | ||
| J301 | Trial decision |
Free format text: TRIAL NUMBER: 2017101002419; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20170518 Effective date: 20190110 |
|
| S901 | Examination by remand of revocation | ||
| GRNO | Decision to grant (after opposition) |