KR20170048530A - Curable composition - Google Patents
Curable composition Download PDFInfo
- Publication number
- KR20170048530A KR20170048530A KR1020177008976A KR20177008976A KR20170048530A KR 20170048530 A KR20170048530 A KR 20170048530A KR 1020177008976 A KR1020177008976 A KR 1020177008976A KR 20177008976 A KR20177008976 A KR 20177008976A KR 20170048530 A KR20170048530 A KR 20170048530A
- Authority
- KR
- South Korea
- Prior art keywords
- meth
- compound
- parts
- acrylate
- resin
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 80
- 150000001875 compounds Chemical class 0.000 claims abstract description 66
- -1 thiol compound Chemical class 0.000 claims abstract description 62
- 239000002096 quantum dot Substances 0.000 claims abstract description 48
- 239000003505 polymerization initiator Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 32
- 125000003396 thiol group Chemical group [H]S* 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims description 60
- 229920005989 resin Polymers 0.000 claims description 60
- 229910052798 chalcogen Inorganic materials 0.000 claims description 5
- 229910052795 boron group element Inorganic materials 0.000 claims description 3
- 229910001849 group 12 element Inorganic materials 0.000 claims description 3
- 229910052696 pnictogen Inorganic materials 0.000 claims description 3
- 229910052800 carbon group element Inorganic materials 0.000 claims description 2
- 238000011161 development Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 54
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 52
- 239000002904 solvent Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 23
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 22
- 229920001577 copolymer Polymers 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- 239000007787 solid Substances 0.000 description 16
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 15
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- JOBBTVPTPXRUBP-UHFFFAOYSA-N [3-(3-sulfanylpropanoyloxy)-2,2-bis(3-sulfanylpropanoyloxymethyl)propyl] 3-sulfanylpropanoate Chemical compound SCCC(=O)OCC(COC(=O)CCS)(COC(=O)CCS)COC(=O)CCS JOBBTVPTPXRUBP-UHFFFAOYSA-N 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- OTTZHAVKAVGASB-UHFFFAOYSA-N hept-2-ene Chemical compound CCCCC=CC OTTZHAVKAVGASB-UHFFFAOYSA-N 0.000 description 12
- 238000006862 quantum yield reaction Methods 0.000 description 12
- 102100027123 55 kDa erythrocyte membrane protein Human genes 0.000 description 11
- 101001057956 Homo sapiens 55 kDa erythrocyte membrane protein Proteins 0.000 description 11
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 11
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 11
- 239000000178 monomer Substances 0.000 description 11
- 238000006116 polymerization reaction Methods 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 10
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 9
- 150000004292 cyclic ethers Chemical group 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- 229920001296 polysiloxane Polymers 0.000 description 9
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical group C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 6
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 6
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000005083 Zinc sulfide Substances 0.000 description 5
- 239000011324 bead Substances 0.000 description 5
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- WDAXFOBOLVPGLV-UHFFFAOYSA-N isobutyric acid ethyl ester Natural products CCOC(=O)C(C)C WDAXFOBOLVPGLV-UHFFFAOYSA-N 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 4
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- UFDHBDMSHIXOKF-UHFFFAOYSA-N cyclohexene-1,2-dicarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 3
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 3
- HOXINJBQVZWYGZ-UHFFFAOYSA-N fenbutatin oxide Chemical compound C=1C=CC=CC=1C(C)(C)C[Sn](O[Sn](CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C1=CC=CC=C1 HOXINJBQVZWYGZ-UHFFFAOYSA-N 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- KMOUUZVZFBCRAM-UHFFFAOYSA-N 1,2,3,6-tetrahydrophthalic anhydride Chemical compound C1C=CCC2C(=O)OC(=O)C21 KMOUUZVZFBCRAM-UHFFFAOYSA-N 0.000 description 2
- ZMSKAQFWYOSTQX-UHFFFAOYSA-N 1-(3-sulfanylpropanoyloxy)butyl 3-sulfanylpropanoate Chemical compound SCCC(=O)OC(CCC)OC(=O)CCS ZMSKAQFWYOSTQX-UHFFFAOYSA-N 0.000 description 2
- MKRBAPNEJMFMHU-UHFFFAOYSA-N 1-benzylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1CC1=CC=CC=C1 MKRBAPNEJMFMHU-UHFFFAOYSA-N 0.000 description 2
- BQTPKSBXMONSJI-UHFFFAOYSA-N 1-cyclohexylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1CCCCC1 BQTPKSBXMONSJI-UHFFFAOYSA-N 0.000 description 2
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 2
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 2
- SDJHPPZKZZWAKF-UHFFFAOYSA-N 2,3-dimethylbuta-1,3-diene Chemical compound CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 description 2
- GBOJZXLCJZDBKO-UHFFFAOYSA-N 2-(2-chlorophenyl)-2-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C1(C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)N=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=N1 GBOJZXLCJZDBKO-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- VCWMHBBURFAUMN-UHFFFAOYSA-N 2-(3-ethyloxetan-3-yl)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCC1(CC)COC1 VCWMHBBURFAUMN-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 2
- FDSUVTROAWLVJA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)COCC(CO)(CO)CO FDSUVTROAWLVJA-UHFFFAOYSA-N 0.000 description 2
- PTJWCLYPVFJWMP-UHFFFAOYSA-N 2-[[3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)COCC(CO)(CO)CO PTJWCLYPVFJWMP-UHFFFAOYSA-N 0.000 description 2
- 125000004182 2-chlorophenyl group Chemical group [H]C1=C([H])C(Cl)=C(*)C([H])=C1[H] 0.000 description 2
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- WERQPPCVTFSKSO-UHFFFAOYSA-N 3a,7a-dimethyl-4,5-dihydro-2-benzofuran-1,3-dione Chemical compound C1CC=CC2(C)C(=O)OC(=O)C21C WERQPPCVTFSKSO-UHFFFAOYSA-N 0.000 description 2
- HMMBJOWWRLZEMI-UHFFFAOYSA-N 4,5,6,7-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CCCC2=C1C(=O)OC2=O HMMBJOWWRLZEMI-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- DOWVFPAIJRADGF-UHFFFAOYSA-N 4-ethenyl-2-benzofuran-1,3-dione Chemical compound C=CC1=CC=CC2=C1C(=O)OC2=O DOWVFPAIJRADGF-UHFFFAOYSA-N 0.000 description 2
- OHMDZMAJDUVGHO-UHFFFAOYSA-N 5-ethenyl-2-benzofuran-1,3-dione Chemical compound C=CC1=CC=C2C(=O)OC(=O)C2=C1 OHMDZMAJDUVGHO-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 2
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 2
- 239000007809 chemical reaction catalyst Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- BHIWKHZACMWKOJ-UHFFFAOYSA-N methyl isobutyrate Chemical compound COC(=O)C(C)C BHIWKHZACMWKOJ-UHFFFAOYSA-N 0.000 description 2
- 229940017219 methyl propionate Drugs 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000003566 oxetanyl group Chemical group 0.000 description 2
- 125000000466 oxiranyl group Chemical group 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
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- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
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- C08F291/00—Macromolecular compounds obtained by polymerising monomers on to macromolecular compounds according to more than one of the groups C08F251/00 - C08F289/00
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/10—Metal compounds
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- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/37—Thiols
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
종래의 경화성 조성물로부터, 포토리소그래프법에 의해 경화 패턴을 형성한 경우, 현상 후의 경화 패턴의 잔막율이 낮다고 하는 문제가 있었다. 잔막율이란, 이하의 식 (z)로 나타내는 값을 말한다.
잔막율(%)=Td/Te×100 (z)
[식 (z) 중, Td는 경화 패턴의 막 두께를 나타내고, Te는 광조사 후의 조성물층의 막 두께를 나타낸다.]
양자점, 중합 개시제, 중합성 화합물 및 티올 화합물을 포함하는 경화성 조성물. 티올 화합물이, 분자 내에 2 이상의 술파닐기를 가지는 티올 화합물인 상기 경화성 조성물.When a cured pattern is formed from a conventional curable composition by a photolithographic method, there is a problem that the residual film ratio of the cured pattern after development is low. The residual film ratio refers to a value represented by the following formula (z).
Residual film ratio (%) = Td / Te x 100 (z)
[In the formula (z), Td represents the film thickness of the cured pattern, and Te represents the film thickness of the composition layer after light irradiation.
A quantum dot, a polymerization initiator, a polymerizable compound, and a thiol compound. Wherein the thiol compound is a thiol compound having two or more sulfanyl groups in the molecule.
Description
본 발명은, 양자점을 포함하는 경화성 조성물 및 표시 장치에 관한 것이다.The present invention relates to a curable composition comprising a quantum dot and a display device.
특허 문헌 1에는, 반도체 초미립자(양자점), 용제 및 중합 가능한 모노머로 이루어지는 경화성 조성물이 기재되어 있다.Patent Document 1 describes a curable composition comprising semiconductor ultrafine particles (quantum dots), a solvent and a polymerizable monomer.
특허 문헌 1에 기재된 경화성 조성물로, 포토리소그래프법에 의해 경화 패턴을 형성한 경우, 현상 후의 경화 패턴의 잔막율이 낮다고 하는 문제가 있었다. 여기서, 경화 패턴이란, 기판의 일부에 경화막이 형성된 것을 말한다. 또한, 잔막율이란, 이하의 식 (z)로 나타내는 값을 말한다.There is a problem that when the cured pattern is formed by the photolithographic method with the curable composition described in Patent Document 1, the residual film ratio of the cured pattern after development is low. Here, the cured pattern means a cured film formed on a part of the substrate. The term "residual film ratio" refers to a value represented by the following equation (z).
잔막율(%)=Td/Te×100 (z)Residual film ratio (%) = Td / Te x 100 (z)
[식 (z) 중, Td는 경화 패턴의 막 두께를 나타내고, Te는 광조사 후의 조성물층의 막 두께를 나타낸다.][In the formula (z), Td represents the film thickness of the cured pattern, and Te represents the film thickness of the composition layer after light irradiation.
본 발명은, 이하의 발명을 포함한다.The present invention includes the following inventions.
[1] 양자점, 중합 개시제, 중합성 화합물 및 티올 화합물을 포함하는 경화성 조성물.[1] A curable composition comprising a quantum dot, a polymerization initiator, a polymerizable compound and a thiol compound.
[2] 티올 화합물이, 분자 내에 2 이상의 술파닐기를 가지는 티올 화합물인 [1]에 기재된 경화성 조성물.[2] The curable composition according to [1], wherein the thiol compound is a thiol compound having two or more sulfanyl groups in the molecule.
[3] 양자점이, 12족 원소와 16족 원소의 화합물, 13족 원소와 15족 원소의 화합물 및 14족 원소와 16족 원소의 화합물로 이루어지는 군으로부터 선택되는 적어도 일종을 포함하는 [1] 또는 [2]에 기재된 경화성 조성물.[3] The method according to [1] or [2], wherein the quantum dot comprises at least one selected from the group consisting of a compound of a Group 12 element and a Group 16 element, a compound of a Group 13 element and a Group 15 element and a compound of a Group 14 element and a Group 16 element The curable composition according to [2].
[4] 수지를 더 포함하는 [1]~[3] 중 어느 것에 기재된 경화성 조성물.[4] The curable composition according to any one of [1] to [3], which further comprises a resin.
[5] [1]~[4] 중 어느 것에 기재된 경화성 조성물로부터 형성되는 경화막.[5] A cured film formed from the curable composition according to any one of [1] to [4].
[6] [5]에 기재된 경화막을 포함하는 표시 장치.[6] A display device comprising the cured film according to [5].
본 발명의 경화성 조성물에 의하면, 현상 시에 높은 잔막율로 경화 패턴을 얻을 수 있고, 또한 당해 경화 패턴은, 발광시켰을 때의 양자 수율이 우수하다.According to the curable composition of the present invention, a cured pattern can be obtained at a high residual film ratio at the time of development, and the cured pattern has excellent quantum yield when light is emitted.
본 발명의 경화성 조성물은, 양자점 (A), 중합성 화합물 (B), 중합 개시제 (C) 및 티올 화합물 (D)를 포함한다.The curable composition of the present invention comprises a quantum dot (A), a polymerizable compound (B), a polymerization initiator (C) and a thiol compound (D).
<양자점 (A)><Quantum dots (A)>
양자점은, 입자경 1㎚~100㎚ 정도의 반도체 미립자이며, 반도체의 밴드 갭을 이용하여, 자외광 또는 가시광을 흡수하여 발광하는 미립자이다.The quantum dot is a semiconductor fine particle having a particle diameter of about 1 nm to 100 nm and is a fine particle which absorbs ultraviolet light or visible light and emits light by using a band gap of a semiconductor.
양자점으로서는, 각각 화학식으로, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdHgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe 및 HgZnSTe 등의 12족 원소와 16족 원소의 화합물; GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs 및 InAlPAs 등의 13족 원소와 15족 원소의 화합물; PdS 및 PbSe 등의 14족 원소와 16족 원소의 화합물 등을 들 수 있다.As the quantum dots, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe A compound of a group 12 element and a group 16 element such as CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, A compound of a Group 13 element and a Group 15 element such as InAlNAs and InAlPAs; PdS and PbSe, and the like.
양자점이 S(유황 원자)나 Se(셀렌 원자)를 포함하는 경우에는, 금속 산화물이나 유기물로 표면 수식한 양자점을 사용해도 된다. 표면 수식한 양자점을 사용함으로써, 유기층을 형성하는 재료 중의 반응 성분에 의해 S나 Se가 뽑아내지는 것을 방지할 수 있다.When the quantum dot contains S (sulfur atom) or Se (selenium atom), a quantum dot surface-modified with a metal oxide or an organic substance may be used. By using the surface-modified quantum dots, it is possible to prevent S or Se from being extracted by the reaction component in the material for forming the organic layer.
또한 양자점은, 상기의 화합물을 조합하여 코어 셸 구조를 형성해도 된다.Further, the quantum dots may form a core shell structure by combining the above-described compounds.
이러한 조합으로서는, 코어가 CdSe(셀렌화 카드뮴)이며, 셸이 ZnS(황화아연)인 미립자 등을 들 수 있다.Examples of such a combination include fine particles in which the core is CdSe (cadmium selenide) and the shell is ZnS (zinc sulfide).
양자점의 에너지 상태는 그 크기에 의존하기 때문에, 입자경을 변경함으로써 자유롭게 발광 파장을 선택하는 것이 가능하다. 예를 들면, CdSe만으로 구성되는 양자점의 경우, 입자경이 2.3㎚, 3.0㎚, 3.8㎚, 4.6㎚일 때의 형광 스펙트럼의 피크 파장은, 각각 528㎚, 570㎚, 592㎚, 637㎚이다. 또한, 양자점으로부터의 발광 광은 스펙트럼 폭이 좁아, 이러한 급준(急峻)한 피크를 가지는 광을 조합함으로써, 표시 장치의 표시 가능한 색 영역이 확대된다. 또한, 양자점은, 응답성이 높아, 광원으로부터 방사되는 광을 효율적으로 이용할 수 있다.Since the energy state of the quantum dots depends on the size thereof, it is possible to freely select the emission wavelength by changing the particle diameter. For example, in the case of quantum dots composed of only CdSe, the peak wavelengths of the fluorescence spectra when the particle diameters are 2.3 nm, 3.0 nm, 3.8 nm, and 4.6 nm are 528 nm, 570 nm, 592 nm, and 637 nm, respectively. Further, the emitted light from the quantum dots has a narrow spectral width, and the displayable color gamut of the display device is enlarged by combining light having such a sharp peak. In addition, the quantum dot has high responsiveness, so that light emitted from the light source can be utilized efficiently.
본 발명의 경화성 조성물은, 광원으로부터 방사되는 광에 의해, 특정 파장의 광을 발광시키는 양자점만을 함유해도 되고, 상이한 파장의 광을 발광시키는 양자점을 2종 이상 조합하여 함유해도 된다. 상기 특정 파장의 광으로서는, 예를 들면, 적색광, 녹색광 및 청색광을 들 수 있다.The curable composition of the present invention may contain only quantum dots which emit light of a specific wavelength by the light emitted from the light source or may contain two or more kinds of quantum dots which emit light of different wavelengths. Examples of the light having the specific wavelength include red light, green light, and blue light.
양자점 (A)의 함유율은, 고형분에 대하여, 1~50질량%인 것이 바람직하고, 보다 바람직하게는 5~40질량%이다. 본 명세서에서 말하는 고형분이란, 후술하는 용제 (F) 및 그 밖의 용제를 제외한 경화성 조성물 성분의 합계를 의미한다. 조성물 중의 고형분의 함유율은, 액체 크로마토그래피 또는 가스 크로마토그래피 등의 공지의 분석 수단으로 측정할 수 있다.The content of the quantum dots (A) is preferably 1 to 50% by mass, more preferably 5 to 40% by mass, based on the solid content. As used herein, the solid content means the sum of components of the curable composition excluding the solvent (F) and other solvents to be described later. The content of the solid content in the composition can be measured by a known analytical means such as liquid chromatography or gas chromatography.
<중합성 화합물 (B)>≪ Polymerizable compound (B) >
중합성 화합물 (B)는, 후술하는 중합 개시제 (C)로부터 발생된 활성 라디칼, 산 등에 의해 중합할 수 있는 화합물이다. 이러한 화합물로서는, 예를 들면, 에틸렌성 불포화 결합을 가지는 화합물 등을 들 수 있고, 바람직하게는 (메타)아크릴산 에스테르 화합물이다.The polymerizable compound (B) is a compound that can be polymerized by an active radical, an acid, or the like generated from a polymerization initiator (C) to be described later. As such a compound, for example, a compound having an ethylenic unsaturated bond, and the like, and preferably a (meth) acrylic acid ester compound.
또한, 본 명세서에 있어서, 「(메타)아크릴산」이란, 아크릴산 및 메타크릴산으로 이루어지는 군으로부터 선택되는 적어도 1종을 나타낸다. 「(메타)아크릴로일」 및 「(메타)아크릴레이트」 등의 표기도, 동일한 의미를 가진다.In the present specification, "(meth) acrylic acid" means at least one kind selected from the group consisting of acrylic acid and methacrylic acid. The expressions such as "(meth) acryloyl" and "(meth) acrylate" have the same meaning.
그 중에서도, 중합성 화합물 (B)는, 에틸렌성 불포화 결합을 3개 이상 가지는 중합성 화합물인 것이 바람직하다. 이러한 중합성 화합물로서는, 예를 들면, 트리메틸올프로판트리(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트, 트리펜타에리스리톨옥타(메타)아크릴레이트, 트리펜타에리스리톨헵타(메타)아크릴레이트, 테트라펜타에리스리톨데카(메타)아크릴레이트, 테트라펜타에리스리톨노나(메타)아크릴레이트, 트리스(2-(메타)아크릴로일옥시에틸)이소시아누레이트, 에틸렌글리콜 변성 펜타에리스리톨테트라(메타)아크릴레이트, 에틸렌글리콜 변성 디펜타에리스리톨헥사(메타)아크릴레이트, 프로필렌글리콜 변성 펜타에리스리톨테트라(메타)아크릴레이트, 프로필렌글리콜 변성 디펜타에리스리톨헥사(메타)아크릴레이트, 카프로락톤 변성 펜타에리스리톨테트라(메타)아크릴레이트, 카프로락톤 변성 디펜타에리스리톨헥사(메타)아크릴레이트 등을 들 수 있다.Among them, the polymerizable compound (B) is preferably a polymerizable compound having three or more ethylenic unsaturated bonds. Examples of such a polymerizable compound include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol penta (meth) (Meth) acrylate, tetrapentaerythritol hexa (meth) acrylate, tripentaerythritol octa (metha) acrylate, tripentaerythritol hepta Ethylene glycol-modified pentaerythritol tetra (meth) acrylate, ethylene glycol-modified dipentaerythritol hexa (metha) acrylate, propylene glycol-modified pentaerythritol tetra (meth) acrylate, Acrylate, propylene glycol-modified dipentaerythritol hexa (meth) acrylate Caprolactone-modified pentaerythritol tetra (meth) acrylate, and caprolactone-modified dipentaerythritol hexa (meth) acrylate.
중합성 화합물 (B)의 중량 평균 분자량은, 바람직하게는 150~2,900, 보다 바람직하게는 250~1,500이다.The weight average molecular weight of the polymerizable compound (B) is preferably 150 to 2,900, more preferably 250 to 1,500.
중합성 화합물 (B)의 함유율은, 고형분에 대하여, 7~65질량%인 것이 바람직하고, 보다 바람직하게는 13~60질량%이며, 더 바람직하게는 17~55질량%이다. 중합성 화합물 (B)의 함유율이, 상기 범위 내에 있으면, 경화 패턴의 잔막율 및 경화 패턴의 내약품성이 보다 향상되는 경향이 있다.The content of the polymerizable compound (B) is preferably 7 to 65% by mass, more preferably 13 to 60% by mass, and still more preferably 17 to 55% by mass, based on the solid content. When the content of the polymerizable compound (B) is within the above range, the residual film ratio of the cured pattern and the chemical resistance of the cured pattern tend to be further improved.
<중합 개시제 (C)>≪ Polymerization initiator (C) >
중합 개시제 (C)는, 광이나 열의 작용에 의해 활성 라디칼, 산 등을 발생시키고, 중합 반응을 개시할 수 있는 화합물이면 특별히 한정되지 않아, 공지의 중합 개시제를 이용할 수 있다.The polymerization initiator (C) is not particularly limited as far as it is a compound capable of generating an active radical, an acid or the like by the action of light or heat and capable of initiating polymerization reaction, and a known polymerization initiator can be used.
활성 라디칼을 발생시키는 중합 개시제로서는, 예를 들면, 알킬페논 화합물, O-아실옥심 화합물, 비이미다졸 화합물, 트리아진 화합물 및 아실포스핀옥사이드 화합물을 들 수 있다.Examples of the polymerization initiator that generates an active radical include alkylphenone compounds, O-acyloxime compounds, imidazole compounds, triazine compounds, and acylphosphine oxide compounds.
알킬페논 화합물로서는, 아미노알킬페논 화합물이 바람직하다. 알킬페논 화합물의 구체예로서는, 디에톡시아세토페논, 2-메틸-1-(4-메틸술파닐페닐)-2-모르폴리노프로판-1-온, 2-디메틸아미노-1-(4-모르폴리노페닐)-2-벤질부탄-1-온, 2-디메틸아미노-1-(4-모르폴리노페닐)-2-(4-메틸페닐메틸)부탄-1-온, 2-히드록시-2-메틸-1-페닐프로판-1-온, 벤질디메틸케탈, 2-히드록시-2-메틸-1-〔4-(2-히드록시에톡시)페닐〕프로판-1-온, 1-히드록시시클로헥실페닐케톤, 2-히드록시-2-메틸-1-〔4-(1-메틸비닐)페닐〕프로판-1-온의 올리고머 등을 들 수 있다. 바람직하게는 2-메틸-1-(4-메틸술파닐페닐)-2-모르폴리노프로판-1-온, 2-디메틸아미노-1-(4-모르폴리노페닐)-2-벤질부탄-1-온이다. 이르가큐어 369, 907(이상, 치바·재팬사제) 등의 시판품을 이용해도 된다.As the alkylphenone compound, an aminoalkylphenone compound is preferable. Specific examples of the alkylphenone compound include diethoxyacetophenone, 2-methyl-1- (4-methylsulfanylphenyl) -2-morpholinopropane-1-one, 2- 2- (4-methylphenylmethyl) butan-1-one, 2-hydroxy-2- Methyl-1-phenylpropan-1-one, benzyldimethyl ketal, 2-hydroxy-2-methyl-1- [4- (2-hydroxyethoxy) Hexyl phenyl ketone, and oligomers of 2-hydroxy-2-methyl-1- [4- (1-methylvinyl) phenyl] propan-1-one. Methyl-1- (4-methylsulfanylphenyl) -2-morpholinopropane-1-one, 2-dimethylamino-1- (4-morpholinophenyl) 1-on. Irgacure 369, 907 (manufactured by Chiba, Japan) or the like may be used.
상기 O-아실옥심 화합물은, 식 (d1)로 나타내는 부분 구조를 가지는 화합물일 수 있다. 이하, *은 결합손을 나타낸다.The O-acyloxime compound may be a compound having a partial structure represented by formula (d1). Herein, * denotes a combined hand.
상기 옥심 화합물로서는, 예를 들면, N-벤조일옥시-1-(4-페닐술파닐페닐)부탄-1-온-2-이민, N-벤조일옥시-1-(4-페닐술파닐페닐)옥탄-1-온-2-이민, N-벤조일옥시-1-(4-페닐술파닐페닐)-3-시클로펜틸프로판-1-온-2-이민, N-아세톡시-1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]에탄-1-이민, N-아세톡시-1-[9-에틸-6-{2-메틸-4-(3,3-디메틸-2,4-디옥사시클로펜타닐메틸옥시)벤조일}-9H-카르바졸-3-일]에탄-1-이민, N-아세톡시-1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로판-1-이민, N-벤조일옥시-1-[9-에틸-6-(2-메틸벤조일)-9H-카르바졸-3-일]-3-시클로펜틸프로판-1-온-2-이민; 일본 공개특허 특개2011-132215호 공보, 국제공개공보 2008/78678호, 국제공개공보 2008/78686호, 및 국제공개공보 2012/132558호에 기재된 화합물 등을 들 수 있다. 이르가큐어(등록상표) OXE01, OXE02(이상, BASF사제), N-1919(ADEKA사제) 등의 시판품을 이용해도 된다.Examples of the oxime compounds include N-benzoyloxy-1- (4-phenylsulfanylphenyl) butan-1-one-2-imine, N-benzoyloxy- 2-imine, N-benzoyloxy-1- (4-phenylsulfanylphenyl) -3-cyclopentylpropan- Yl] ethane-1-imine, N-acetoxy-1- [9-ethyl-6- {2-methyl-4- (3,3 -Dimethyl-2,4-dioxacyclopentanylmethyloxy) benzoyl} -9H-carbazol-3-yl] ethan- 1-imine, N- acetoxy- 1- [ Benzoyl) -9H-carbazol-3-yl] -3-cyclopentylpropan- 1-imine, N-benzoyloxy- -Yl] -3-cyclopentylpropan-1-one-2-imine; The compounds disclosed in Japanese Patent Application Laid-Open Nos. H11-132215, 2008/78678, 2008/78686, and 2012/132558. Commercially available products such as Irgacure (registered trademark) OXE01, OXE02 (manufactured by BASF) and N-1919 (manufactured by ADEKA) may be used.
그 중에서도, 옥심 화합물은, N-벤조일옥시-1-(4-페닐술파닐페닐)부탄-1-온-2-이민, N-벤조일옥시-1-(4-페닐술파닐페닐)옥탄-1-온-2-이민 및 N-벤조일옥시-1-(4-페닐술파닐페닐)-3-시클로펜틸프로판-1-온-2-이민으로 이루어지는 군으로부터 선택되는 적어도 일종이 바람직하다.Among them, the oxime compound is preferably selected from the group consisting of N-benzoyloxy-1- (4-phenylsulfanylphenyl) butan-1-one-2-imine, N-benzoyloxy- 2-imine and N-benzoyloxy-1- (4-phenylsulfanylphenyl) -3-cyclopentylpropan-1-one-2-imine.
상기 비이미다졸 화합물은, 예를 들면, 식 (d5)로 나타내는 화합물이다.The non-imidazole compound is, for example, a compound represented by formula (d5).
[식 (d5) 중, R51~R56은, 치환기를 가져도 되는 탄소수 6~10의 아릴기를 나타낸다.][In the formula (d5), R 51 to R 56 represent an aryl group having 6 to 10 carbon atoms which may have a substituent.]
탄소수 6~10의 아릴기로서는, 예를 들면, 페닐기, 톨루일기, 크실릴기, 에틸페닐기 및 나프틸기 등을 들 수 있고, 바람직하게는 페닐기이다.Examples of the aryl group having 6 to 10 carbon atoms include a phenyl group, a toluyl group, a xylyl group, an ethylphenyl group and a naphthyl group, and preferably a phenyl group.
치환기로서는, 예를 들면, 할로겐 원자, 탄소수 1~4의 알콕시기 등을 들 수 있다. 할로겐 원자로서는, 예를 들면, 불소 원자, 염소 원자, 브롬 원자, 요오드 원자 등을 들 수 있고, 바람직하게는 염소 원자이다. 탄소수 1~4의 알콕시기로서는, 예를 들면, 메톡시기, 에톡시기, 프로폭시기, 부톡시기 등을 들 수 있고, 바람직하게는 메톡시기이다.Examples of the substituent include a halogen atom and an alkoxy group having 1 to 4 carbon atoms. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and preferably a chlorine atom. Examples of the alkoxy group having 1 to 4 carbon atoms include a methoxy group, an ethoxy group, a propoxy group, a butoxy group and the like, preferably a methoxy group.
상기 비이미다졸 화합물로서는, 예를 들면, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라페닐비이미다졸, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라페닐-1,2'-비이미다졸, 2,2'-비스(2,3-디클로로페닐)-4,4',5,5'-테트라페닐비이미다졸, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라페닐비이미다졸, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라(알콕시페닐)비이미다졸, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라(디알콕시페닐)비이미다졸, 2,2'-비스(2-클로로페닐)-4,4',5,5'-테트라(트리알콕시페닐)비이미다졸, 4,4'5,5'-위치의 페닐기가 카르보알콕시기에 의해 치환되어 있는 이미다졸 화합물 등을 들 수 있다. 이들 화합물은, 예를 들면, 일본 공개특허 특개평06-75372호 공보, 일본 공개특허 특개평06-75373호 공보, 일본 공고특허 특공소48-38403호 공보, 일본 공개특허 특개소62-174204호 공보, 일본 공개특허 특개평7-10913호 공보 등에 기재되어 있다. 그 중에서도, 하기 식으로 나타나는 화합물 또는 이들 혼합물이 바람직하다.Examples of the imidazole compound include 2,2'-bis (2-chlorophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'-bis Phenyl) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,3-dichlorophenyl) -4,4' Tetraphenylbiimidazole, 2,2'-bis (2-chlorophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'- Tetra (alkoxyphenyl) imidazole, 2,2'-bis (2-chlorophenyl) -4,4 ', 5,5'-tetra (2-chlorophenyl) -4,4 ', 5,5'-tetra (trialkoxyphenyl) biimidazole, a phenyl group in the 4,4'5,5'- position is bonded to a carboalkoxy group And an imidazole compound substituted by a halogen atom. These compounds are disclosed, for example, in JP-A-06-75372, JP-A-06-75373, JP-A-48-38403, JP-A-62-174204 Japanese Patent Application Laid-Open No. 7-10913, and the like. Among them, a compound represented by the following formula or a mixture thereof is preferable.
상기 트리아진 화합물로서는, 예를 들면, 2,4-비스(트리클로로메틸)-6-(4-메톡시페닐)-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-(4-메톡시나프틸)-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-피페로닐-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-(4-메톡시스티릴)-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-〔2-(5-메틸푸란-2-일)에테닐〕-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-〔2-(푸란-2-일)에테닐〕-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-〔2-(4-디에틸아미노-2-메틸페닐)에테닐〕-1,3,5-트리아진, 2,4-비스(트리클로로메틸)-6-〔2-(3,4-디메톡시페닐)에테닐〕-1,3,5-트리아진 등을 들 수 있다. 그 중에서도, 2,4-비스(트리클로로메틸)-6-피페로닐-1,3,5-트리아진이 바람직하다.Examples of the triazine compound include 2,4-bis (trichloromethyl) -6- (4-methoxyphenyl) -1,3,5-triazine, 2,4-bis (trichloromethyl) -6- (4-methoxynaphthyl) -1,3,5-triazine, 2,4-bis (trichloromethyl) -6-piperonyl-1,3,5-triazine, 2,4 Bis (trichloromethyl) -6- [2- (5-methylfuran-1-yl) 2-yl) ethenyl] -1,3,5-triazine, 2,4-bis (trichloromethyl) -6- [2- Triazine, 2,4-bis (trichloromethyl) -6- [2- (4-diethylamino-2-methylphenyl) ethenyl] -1,3,5-triazine, 2,4- Dimethyl-2- (3,4-dimethoxyphenyl) ethenyl] -1,3,5-triazine, and the like. Among them, 2,4-bis (trichloromethyl) -6-piperonyl-1,3,5-triazine is preferable.
상기 아실포스핀옥사이드 화합물로서는, 비스(2,4,6-트리메틸벤조일)페닐포스핀옥사이드, (2,4,6-트리메틸벤조일)디페닐포스핀옥사이드 등을 들 수 있다.Examples of the acylphosphine oxide compound include bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide and (2,4,6-trimethylbenzoyl) diphenylphosphine oxide.
그 밖의 중합 개시제로서는, 벤조인, 벤조인메틸에테르, 벤조인에틸에테르, 벤조인이소프로필에테르, 벤조인이소부틸에테르 등의 벤조인 화합물; 벤조페논, o-벤조일벤조산 메틸, 4-페닐벤조페논, 4-벤조일-4'-메틸디페닐술파이드, 3,3',4,4'-테트라(tert-부틸퍼옥시카르보닐)벤조페논, 2,4,6-트리메틸벤조페논, 4,4'-비스(디에틸아미노)벤조페논 등의 벤조페논 화합물; 9,10-페난트렌퀴논, 2-에틸안트라퀴논, 캄퍼퀴논 등의 퀴논 화합물; 10-부틸-2-클로로아크리돈, 벤질, 페닐글리옥실산메틸, 티타노센 화합물 등을 들 수 있다.Other polymerization initiators include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and benzoin isobutyl ether; Benzophenone, methyl o-benzoylbenzoate, 4-phenylbenzophenone, 4-benzoyl-4'-methyldiphenylsulfide, 3,3 ', 4,4'-tetra (tert- butylperoxycarbonyl) benzophenone Benzophenone compounds such as 2,4,6-trimethylbenzophenone and 4,4'-bis (diethylamino) benzophenone; Quinone compounds such as 9,10-phenanthrenequinone, 2-ethyl anthraquinone, camphorquinone, etc .; Butyl-2-chloroacridone, benzyl, methyl phenylglyoxylate, and titanocene compounds.
경화막 형성 시에 있어서의 반응 효율을 향상시키기 위해, 중합 개시제 (C)에는 O-아실옥심 화합물이 포함되어 있는 것이 바람직하다.In order to improve the reaction efficiency at the time of forming the cured film, it is preferable that the polymerization initiator (C) contains an O-acyloxime compound.
중합 개시제 (C)의 함유량은, 중합성 화합물 (B) 100질량부에 대하여, 바람직하게는 0.1~300질량부이며, 보다 바람직하게는 0.1~200질량부이다. 경화성 조성물이 후술하는 수지 (E)를 포함하는 경우, 중합 개시제 (C)의 함유량은, 후술하는 수지 (E) 및 중합성 화합물 (B)의 합계량 100질량부에 대하여, 바람직하게는 0.1~30질량부이며, 보다 바람직하게는 1~20질량부이다. 중합 개시제 (C)의 함유량이, 상기 범위 내에 있으면, 고감도화되어 노광 시간이 단축되는 경향이 있기 때문에 경화막의 생산성이 향상된다.The content of the polymerization initiator (C) is preferably 0.1 to 300 parts by mass, more preferably 0.1 to 200 parts by mass, per 100 parts by mass of the polymerizable compound (B). The content of the polymerization initiator (C) is preferably from 0.1 to 30 parts by mass per 100 parts by mass of the total amount of the resin (E) and the polymerizable compound (B) described below when the curable composition contains the resin (E) Mass part, and more preferably 1 to 20 mass parts. When the content of the polymerization initiator (C) is within the above range, the sensitivity is improved and the exposure time is shortened, so that the productivity of the cured film is improved.
<중합 개시 조제 (C1)>≪ Polymerization initiator (C1) >
필요에 따라, 중합 개시 조제 (C1)을 병용해도 된다. 중합 개시 조제 (C1)은, 중합 개시제에 의해 중합이 개시된 중합성 화합물의 중합을 촉진하기 위해 이용되는 화합물, 혹은 증감제이며, 중합 개시 조제 (C1)을 포함하는 경우, 통상, 중합 개시제 (C)와 조합하여 이용된다. 중합 개시 조제 (C1)로서는, 아민 화합물, 알콕시안트라센 화합물, 티오크산톤 화합물 및 카르본산 화합물 등을 들 수 있다.If necessary, the polymerization initiator (C1) may be used in combination. The polymerization initiator (C1) is a compound or a sensitizer used for promoting polymerization of the polymerizable compound initiated polymerization by the polymerization initiator. When the polymerization initiator (C1) is contained, usually the polymerization initiator (C ). Examples of the polymerization initiator (C1) include an amine compound, an alkoxyanthracene compound, a thioxanthone compound, and a carboxylic acid compound.
중합 개시 조제 (C1)을 포함하는 경우, 중합 개시 조제 (C1)의 함유량은, 중합성 화합물 (B) 100질량부에 대하여, 바람직하게는 0.1~300질량부이며, 보다 바람직하게는 0.1~200질량부이다. 경화성 조성물이 후술하는 수지 (E)를 포함하는 경우, 중합 개시 조제 (C1)의 함유량은, 수지 (E) 및 중합성 화합물 (B)의 합계량 100질량부에 대하여, 바람직하게는 0.1~30질량부, 보다 바람직하게는 1~20질량부이다. 중합 개시 조제 (C1)의 양이 이 범위 내에 있으면, 더 고감도로 경화막을 형성할 수 있는 경향이 있다.When the polymerization initiator (C1) is contained, the content of the polymerization initiator (C1) is preferably 0.1 to 300 parts by mass, more preferably 0.1 to 200 parts by mass, per 100 parts by mass of the polymerizable compound (B) Mass part. When the curable composition contains the resin (E) described later, the content of the polymerization initiator (C1) is preferably 0.1 to 30 mass parts per 100 mass parts of the total amount of the resin (E) and the polymerizable compound (B) More preferably 1 to 20 parts by mass. When the amount of the polymerization initiator (C1) is within this range, there is a tendency that a cured film can be formed with higher sensitivity.
<티올 화합물 (D)>≪ Thiol compound (D) >
본 발명의 경화성 조성물은, 티올 화합물 (D)를 포함한다. 티올 화합물 (D)는, 분자 내에 술파닐기(-SH)를 가지는 화합물이다. 티올 화합물은, 증감 효과를 가지기 때문에, 이것을 함유하는 경화성 조성물은 경화되기 쉬운 경향이 있다.The curable composition of the present invention comprises a thiol compound (D). The thiol compound (D) is a compound having a sulfanyl group (-SH) in the molecule. Since the thiol compound has a sensitizing effect, the curable composition containing it tends to be hardened.
분자 내에 술파닐기를 1개 가지는 화합물로서는, 예를 들면, 2-술파닐옥사졸, 2-술파닐티아졸, 2-술파닐벤즈이미다졸, 2-술파닐벤조티아졸, 2-술파닐벤조옥사졸, 2-술파닐니코틴산, 2-술파닐피리딘, 2-술파닐피리딘-3-올, 2-술파닐피리딘-N-옥사이드, 4-아미노-6-히드록시-2-술파닐피리미딘, 4-아미노-6-히드록시-2-술파닐피리미딘, 4-아미노-2-술파닐피리미딘, 6-아미노-5-니트로소-2-우라실, 4,5-디아미노-6-히드록시-2-술파닐피리미딘, 4,6-디아미노-2-술파닐피리미딘, 2,4-디아미노-6-술파닐피리미딘, 4,6-디히드록시-2-술파닐피리미딘, 4,6-디메틸-2-술파닐피리미딘, 4-히드록시-2-술파닐-6-메틸피리미딘, 4-히드록시-2-술파닐-6-프로필피리미딘, 2-술파닐-4-메틸피리미딘, 2-술파닐피리미딘, 2-우라실, 3,4,5,6-테트라히드로피리미딘-2-티올, 4,5-디페닐이미다졸-2-티올, 2-술파닐이미다졸, 2-술파닐-1-메틸이미다졸, 4-아미노-3-히드라지노-5-술파닐-1,2,4-트리아졸, 3-아미노-5-술파닐-1,2,4-트리아졸, 2-메틸-4H-1,2,4-트리아졸-3-티올, 4-메틸-4H-1,2,4-트리아졸-3-티올, 3-술파닐1H-1,2,4-트리아졸-3-티올, 2-아미노-5-술파닐-1,3,4-티아디아졸, 5-아미노-1,3,4-티아디아졸-2-티올, 2,5-디술파닐-1,3,4-티아디아졸, (푸란-2-일)메탄티올, 2-술파닐-5-티아졸리돈, 2-술파닐티아졸린, 2-술파닐-4(3H)-퀴나졸리논, 1-페닐-1H-테트라졸-5-티올, 2-퀴놀린티올, 2-술파닐-5-메틸벤즈이미다졸, 2-술파닐-5-니트로벤즈이미다졸, 6-아미노-2-술파닐벤조티아졸, 5-클로로-2-술파닐벤조티아졸, 6-에톡시-2-술파닐벤조티아졸, 6-니트로-2-술파닐벤조티아졸, 2-술파닐나프토이미다졸, 2-술파닐나프토옥사졸, 3-술파닐-1,2,4-트리아졸, 4-아미노-6-술파닐피라졸로[2,4-d]피리딘, 2-아미노-6-퓨린티올, 6-술파닐퓨린, 4-술파닐-1H-피라졸로[2,4-d]피리미딘 등을 들 수 있다.Examples of the compound having one sulfanyl group in the molecule include 2-sulfanyloxazole, 2-sulfanylthiazole, 2-sulfanylbenzimidazole, 2-sulfanylbenzothiazole, 2-sulfanylpyridine-3-ol, 2-sulfanylpyridine-N-oxide, 4-amino-6-hydroxy-2-sulfanylpyrimidine Amino-2-sulfanylpyrimidine, 6-amino-5-nitroso-2-uracil, 4,5-diamino-6- Hydroxy-2-sulfanylpyrimidine, 4,6-diamino-2-sulfanylpyrimidine, 2,4-diamino-6-sulfanylpyrimidine, 4,6-dihydroxy- 4-hydroxy-2-sulfanyl-6-methylpyrimidine, 4-hydroxy-2-sulfanyl-6-propylpyrimidine, 2- 4-methylpyrimidine, 2-sulfanylpyrimidine, 2-uracil, 3,4,5,6-tetrahydropyrimidine-2-thiol, 4,5-diphenylimidazole- , 2-sulfanyl 2-sulfanyl-1-methylimidazole, 4-amino-3-hydrazino-5-sulfanyl-1,2,4-triazole, 3-amino- Methyl-4H-1,2,4-triazole-3-thiol, 3-sulfanyl 1H- Amino-5-sulfanyl-1,3,4-thiadiazole, 5-amino-1,3,4-thiadiazole-2-thiol, (Furan-2-yl) methanethiol, 2-sulfanyl-5-thiazolidone, 2-sulfanylthiazoline, 2-sulfanyl- (3H) -quinazolinone, 1-phenyl-1H-tetrazole-5-thiol, 2-quinolinethiol, 2-sulfanyl-5-methylbenzimidazole, 2-sulfanyl- , 6-amino-2-sulfanylbenzothiazole, 5-chloro-2-sulfanylbenzothiazole, 6-ethoxy-2-sulfanylbenzothiazole, 4-amino-6-sulfanylpyrazolo [2,4-d] pyridine, 2-sulfanylnaphthoic acid, 2-amino-6-purin thiol , 6-sulfanyl purine, 4-sulfanyl-1H-pyrazolo [2,4-d] pyrimidine and the like.
분자 내에 술파닐기를 2개 이상 가지는 화합물로서는, 헥산디티올, 데칸디티올, 1,4-비스(메틸술파닐)벤젠, 부탄디올비스(3-술파닐프로피오네이트), 부탄디올비스(3-술파닐아세테이트), 에틸렌글리콜비스(3-술파닐아세테이트), 트리메틸올프로판트리스(3-술파닐아세테이트), 부탄디올비스(3-술파닐프로피오네이트), 트리메틸올프로판트리스(3-술파닐프로피오네이트), 트리메틸올프로판트리스(3-술파닐아세테이트), 펜타에리스리톨테트라키스(3-술파닐프로피오네이트), 펜타에리스리톨테트라키스(3-술파닐아세테이트), 트리스히드록시에틸트리스(3-술파닐프로피오네이트), 펜타에리스리톨테트라키스(3-술파닐부틸레이트), 1,4-비스(3-술파닐부틸옥시)부탄, 디펜타에리스리톨헥사키스(3-술파닐프로피오네이트), 디펜타에리스리톨헥사키스(3-술파닐아세테이트), 디펜타에리스리톨헥사키스(3-술파닐부틸레이트) 등을 들 수 있다.Examples of the compound having two or more sulfanyl groups in the molecule include hexane dithiol, decanediol, 1,4-bis (methylsulfanyl) benzene, butanediol bis (3-sulfanylpropionate), butanediol bis (3-sulfanyl acetate), trimethylolpropane tris (3-sulfanyl acetate), butanediol bis (3-sulfanyl propionate), trimethylolpropane tris (3-sulfanyl acetate), pentaerythritol tetrakis (3-sulfanyl propionate), pentaerythritol tetrakis (3-sulfanyl acetate), trishydroxyethyl tris (3-sulfanyl propionate), pentaerythritol tetrakis (3-sulfanyl butyrate), 1,4-bis (3-sulfanylbutyloxy) butane, dipentaerythritol hexakis Pentaerythritol hexakis (3-sulfanyl acetate ), Dipentaerythritol hexakis (3-sulfanylbutylate), and the like.
티올 화합물로서는, 분자 내에 술파닐기를 2개 이상 가지는 화합물이 바람직하고, 3 이상 가지는 화합물이 보다 바람직하다. 티올 화합물을 사용하면, 경화 패턴의 잔막율이 높아진다.As the thiol compound, a compound having two or more sulfanyl groups in the molecule is preferable, and a compound having three or more is more preferable. When a thiol compound is used, the residual film ratio of the cured pattern becomes high.
티올 화합물 (D)의 함유량은, 수지 (E) 및 중합성 화합물 (B)의 합계량 100질량부에 대하여, 바람직하게는 0.1~20질량부, 보다 바람직하게는 0.1~10질량부이다. 티올 화합물 (D)의 함유량이 이 범위 내에 있으면, 경화 패턴을 형성할 때의 중합의 감도가 보다 높아지고, 또한 현상 후의 경화 패턴의 잔막율이 보다 높아지는 경향이 있다.The content of the thiol compound (D) is preferably 0.1 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, based on 100 parts by mass of the total amount of the resin (E) and the polymerizable compound (B). When the content of the thiol compound (D) is within this range, the sensitivity of polymerization at the time of forming a cured pattern becomes higher and the residual film ratio of the cured pattern after development tends to be higher.
본 발명의 경화성 조성물은, 상기 서술의 성분 외에, 수지 (E), 용제 (F) 및/또는 레벨링제 (G)를 포함하는 것이 바람직하다.The curable composition of the present invention preferably contains a resin (E), a solvent (F) and / or a leveling agent (G) in addition to the components described above.
<수지 (E)>≪ Resin (E) >
수지 (E)는, 알칼리 가용성 수지인 것이 바람직하다. 수지 (E)로서는, 이하의 수지 [K1]~[K4] 등을 들 수 있다.The resin (E) is preferably an alkali-soluble resin. Examples of the resin (E) include the following resins [K1] to [K4].
수지 [K1]: 불포화 카르본산 및 불포화 카르본산 무수물로 이루어지는 군으로부터 선택되는 적어도 1종 (a)(이하 「(a)」라고 하는 경우가 있음)와, (a)와 공중합 가능한 단량체 (c)(단, (a)와는 상이하다. 이하 「(c)」라고 하는 경우가 있음)를 공중합시킨 수지,(A) (hereinafter, sometimes referred to as "(a)") selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride; a monomer (c) copolymerizable with (a) (Which is different from (a), hereinafter sometimes referred to as "(c)")
수지 [K2]: (a)와 (c)의 공중합체에 탄소수 2~4의 환상(環狀) 에테르 구조와 에틸렌성 불포화 결합을 가지는 단량체 (b)(이하 「(b)」라고 하는 경우가 있음)를 반응시킨 수지,Resin [K2]: A monomer (b) (hereinafter referred to as "(b)") having a cyclic ether structure and an ethylenic unsaturated bond having 2 to 4 carbon atoms in the copolymer of (a) Lt; / RTI >
수지 [K3]: (b)와 (c)의 공중합체에 (a)를 반응시킨 수지,Resin [K3]: a resin obtained by reacting (a) a copolymer of (b) and (c)
수지 [K4]: (b)와 (c)의 공중합체에 (a)를 반응시키고, 추가로 카르본산 무수물을 반응시킨 수지.Resin [K4]: Resin (a) is reacted with the copolymer of (b) and (c) and further reacted with carboxylic acid anhydride.
(a)로서는, 예를 들면, 아크릴산, 메타크릴산, 크로톤산, o-, m-, p-비닐벤조산 등의 불포화 모노카르본산류; 말레산, 푸마르산, 시트라콘산, 메사콘산, 이타콘산, 3-비닐프탈산, 4-비닐프탈산, 3,4,5,6-테트라히드로프탈산, 1,2,3,6-테트라히드로프탈산, 디메틸테트라히드로프탈산, 1,4-시클로헥센디카르본산 등의 불포화 디카르본산류; 메틸-5-노르보르넨-2,3-디카르본산, 5-카르복시비시클로[2.2.1]헵트-2-엔, 5,6-디카르복시비시클로[2.2.1]헵트-2-엔, 5-카르복시-5-메틸비시클로[2.2.1]헵트-2-엔, 5-카르복시-5-에틸비시클로[2.2.1]헵트-2-엔, 5-카르복시-6-메틸비시클로[2.2.1]헵트-2-엔, 5-카르복시-6-에틸비시클로[2.2.1]헵트-2-엔 등의 카르복시기를 함유하는 비시클로 불포화 화합물류; 무수 말레산, 시트라콘산 무수물, 이타콘산 무수물, 3-비닐프탈산 무수물, 4-비닐프탈산 무수물, 3,4,5,6-테트라히드로프탈산 무수물, 1,2,3,6-테트라히드로프탈산 무수물, 디메틸테트라히드로프탈산 무수물, 5,6-디카르복시비시클로[2.2.1]헵트-2-엔 무수물 등의 불포화 디카르본산류 무수물; 호박산 모노〔2-(메타)아크릴로일옥시에틸〕, 프탈산 모노〔2-(메타)아크릴로일옥시에틸〕 등의 2가 이상의 다가 카르본산의 불포화 모노〔(메타)아크릴로일옥시알킬〕에스테르류; α-(히드록시메틸)아크릴산과 같은, 동일 분자 중에 히드록시기 및 카르복시기를 함유하는 불포화 아크릴레이트류 등을 들 수 있다.(a) include, for example, unsaturated monocarboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, o-, m- and p-vinylbenzoic acid; Maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, 3-vinylphthalic acid, 4-vinylphthalic acid, 3,4,5,6-tetrahydrophthalic acid, 1,2,3,6-tetrahydrophthalic acid, Unsaturated dicarboxylic acids such as tetrahydrophthalic acid and 1,4-cyclohexene dicarboxylic acid; Methyl-5-norbornene-2,3-dicarboxylic acid, 5-carboxybicyclo [2.2.1] hept-2-ene, 5,6-dicarboxybicyclo [2.2.1] hept- 5-ethylbicyclo [2.2.1] hept-2-ene, 5-carboxy-6-methylbicyclo [2.2.1] hept- [2.2.1] hept-2-ene, and 5-carboxy-6-ethylbicyclo [2.2.1] hept-2-ene; Maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydrophthalic anhydride, 1,2,3,6-tetrahydrophthalic anhydride , Unsaturated dicarboxylic anhydrides such as dimethyl tetrahydrophthalic anhydride and 5,6-dicarboxybicyclo [2.2.1] hept-2-eno anhydride; (Meth) acryloyloxyalkyl] unsaturated monocarboxylic acid mono [2- (meth) acryloyloxyethyl] phthalic acid mono [2- (meth) acryloyloxyethyl] Esters; and unsaturated acrylates containing a hydroxyl group and a carboxyl group in the same molecule, such as? - (hydroxymethyl) acrylic acid.
이들 중, 공중합 반응성의 점이나 얻어지는 수지의 알칼리 수용액에 대한 용해성의 점에서, 아크릴산, 메타크릴산, 무수 말레산 등이 바람직하다.Of these, acrylic acid, methacrylic acid and maleic anhydride are preferable from the viewpoint of copolymerization reactivity and the solubility of the resulting resin in an aqueous alkali solution.
(b)는, 예를 들면, 탄소수 2~4의 환상 에테르 구조와 에틸렌성 불포화 결합을 가지는 단량체이다. 탄소수 2~4의 환상 에테르 구조로서는, 예를 들면, 옥시란환, 옥세탄환, 테트라히드로푸란환 등을 들수 있고, 1종만 사용해도 되고, 복수종을 조합하여 사용해도 된다. (b)는, 탄소수 2~4의 환상 에테르 구조와 (메타)아크릴로일옥시기를 가지는 단량체가 바람직하다.(b) is, for example, a monomer having a cyclic ether structure having 2 to 4 carbon atoms and an ethylenic unsaturated bond. Examples of the cyclic ether structure having 2 to 4 carbon atoms include oxirane ring, oxetane ring, tetrahydrofuran ring and the like, and one type may be used, or a plurality of types may be used in combination. (b) is preferably a monomer having a cyclic ether structure having 2 to 4 carbon atoms and a (meth) acryloyloxy group.
(b)로서는, 예를 들면, 글리시딜(메타)아크릴레이트, β-메틸글리시딜(메타)아크릴레이트, β-에틸글리시딜(메타)아크릴레이트, 글리시딜비닐에테르, o-비닐벤질글리시딜에테르, m-비닐벤질글리시딜에테르, p-비닐벤질글리시딜에테르, α-메틸-o-비닐벤질글리시딜에테르, α-메틸-m-비닐벤질글리시딜에테르, α-메틸-p-비닐벤질글리시딜에테르, 2,3-비스(글리시딜옥시메틸)스티렌, 2,4-비스(글리시딜옥시메틸)스티렌, 2,5-비스(글리시딜옥시메틸)스티렌, 2,6-비스(글리시딜옥시메틸)스티렌, 2,3,4-트리스(글리시딜옥시메틸)스티렌, 2,3,5-트리스(글리시딜옥시메틸)스티렌, 2,3,6-트리스(글리시딜옥시메틸)스티렌, 3,4,5-트리스(글리시딜옥시메틸)스티렌, 2,4,6-트리스(글리시딜옥시메틸)스티렌 등의 옥시란환과 에틸렌성 불포화 결합을 가지는 단량체; 3-메틸-3-메타크릴로일옥시메틸옥세탄, 3-메틸-3-아크릴로일옥시메틸옥세탄, 3-에틸-3-메타크릴로일옥시메틸옥세탄, 3-에틸-3-아크릴로일옥시메틸옥세탄, 3-메틸-3-메타크릴로일옥시에틸옥세탄, 3-메틸-3-아크릴로일옥시에틸옥세탄, 3-에틸-3-메타크릴로일옥시에틸옥세탄, 3-에틸-3-아크릴로일옥시에틸옥세탄 등의 옥세탄환과 에틸렌성 불포화 결합을 가지는 단량체; 테트라히드로푸르푸릴아크릴레이트(예를 들면, 오사카유기화학공업(주)제의 "비스코트 V#150"), 테트라히드로푸르푸릴메타크릴레이트 등의 테트라히드로푸란환과 에틸렌성 불포화 결합을 가지는 단량체를 들 수 있다.(meth) acrylate,? -ethylglycidyl (meth) acrylate, glycidyl vinyl ether, o-methylglycidyl (meth) acrylate, Vinyl benzyl glycidyl ether, m-vinyl benzyl glycidyl ether, p-vinyl benzyl glycidyl ether,? -Methyl-o-vinyl benzyl glycidyl ether,? -Methyl- methyl-p-vinylbenzyl glycidyl ether, 2,3-bis (glycidyloxymethyl) styrene, 2,4-bis (glycidyloxymethyl) styrene, 2,5- Styrene, 2,6-bis (glycidyloxymethyl) styrene, 2,3,4-tris (glycidyloxymethyl) styrene, 2,3,5-tris (glycidyloxymethyl) Styrene, 2,3,6-tris (glycidyloxymethyl) styrene, 3,4,5-tris (glycidyloxymethyl) styrene, 2,4,6-tris (glycidyloxymethyl) A monomer having an oxirane ring and an ethylenic unsaturated bond; Methyl-3-acryloyloxymethyl oxetane, 3-ethyl-3-methacryloyloxymethyl oxetane, 3-ethyl-3- Acryloyloxyethyloxetane, 3-methyl-3-methacryloyloxyethyloxetane, 3-methyl-3-acryloyloxyethyloxetane, 3-ethyl- Cetane, 3-ethyl-3-acryloyloxyethyloxetane, and other oxetane rings and an ethylenically unsaturated bond; (For example, "Viscot V # 150" manufactured by Osaka Organic Chemical Industry Co., Ltd.), tetrahydrofuran ring such as tetrahydrofurfuryl methacrylate, and a monomer having an ethylenic unsaturated bond .
(b)는, 수지 [K2]~[K4]의 제조 시의 반응성이 높아, 미반응의 (b)가 잔존하기 어려운 점에서, (b)로서는, 옥시란환과 에틸렌성 불포화 결합을 가지는 단량체가 바람직하다.(b) has a high reactivity at the time of production of the resins [K2] to [K4] and the unreacted portion (b) desirable.
(c)로서는, 예를 들면, 메틸(메타)아크릴레이트, 에틸(메타)아크릴레이트, n-부틸(메타)아크릴레이트, sec-부틸(메타)아크릴레이트, tert-부틸(메타)아크릴레이트, 2-에틸헥실(메타)아크릴레이트, 도데실(메타)아크릴레이트, 라우릴(메타)아크릴레이트, 스테아릴(메타)아크릴레이트, 시클로펜틸(메타)아크릴레이트, 시클로헥실(메타)아크릴레이트, 2-메틸시클로헥실(메타)아크릴레이트, 트리시클로[5.2.1.02,6]데칸-8-일(메타)아크릴레이트(당해 기술 분야의 관용명: 디시클로펜타닐(메타)아크릴레이트, 또는 트리시클로데실(메타)아크릴레이트), 트리시클로[5.2.1.02,6]데센-8-일(메타)아크릴레이트(당해 기술 분야의 관용명: 디시클로펜테닐(메타)아크릴레이트), 디시클로펜타닐옥시에틸(메타)아크릴레이트, 이소보르닐(메타)아크릴레이트, 아다만틸(메타)아크릴레이트, 알릴(메타)아크릴레이트, 프로파르길(메타)아크릴레이트, 페닐(메타)아크릴레이트, 나프틸(메타)아크릴레이트, 벤질(메타)아크릴레이트 등의 (메타)아크릴산 에스테르류;(meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, sec-butyl (meth) acrylate, tert- (Meth) acrylate, cyclohexyl (meth) acrylate, cyclohexyl (meth) acrylate, cyclohexyl (meth) acrylate, (Meth) acrylate, dicyclopentanyl (meth) acrylate, tricyclo [5.2.1.0 2,6 ] decan-8-yl Decyl (meth) acrylate), tricyclo [5.2.1.0 2,6 ] decen-8-yl (meth) acrylate (dicyclopentenyl (meth) acrylate in the state of the art), dicyclopentanyloxy Ethyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate Sites, allyl (meth) acrylate, propargyl (meth) acrylate, phenyl (meth) acrylate, naphthyl (meth) acrylate, benzyl (meth) (meth) acrylic acid esters such as acrylate;
2-히드록시에틸(메타)아크릴레이트, 2-히드록시프로필(메타)아크릴레이트 등의 히드록시기 함유 (메타)아크릴산 에스테르류;(Meth) acrylic acid esters having a hydroxy group such as 2-hydroxyethyl (meth) acrylate and 2-hydroxypropyl (meth) acrylate;
말레산 디에틸, 푸마르산 디에틸, 이타콘산 디에틸 등의 디카르본산 디에스테르;Dicarboxylic acid diesters such as diethyl maleate, diethyl fumarate and diethyl itaconate;
비시클로[2.2.1]헵트-2-엔, 5-메틸비시클로[2.2.1]헵트-2-엔, 5-에틸비시클로[2.2.1]헵트-2-엔, 5-히드록시비시클로[2.2.1]헵트-2-엔, 5-히드록시메틸비시클로[2.2.1]헵트-2-엔, 5-(2'-히드록시에틸)비시클로[2.2.1]헵트-2-엔, 5-메톡시비시클로[2.2.1]헵트-2-엔, 5-에톡시비시클로[2.2.1]헵트-2-엔, 5,6-디히드록시비시클로[2.2.1]헵트-2-엔, 5,6-디(히드록시메틸)비시클로[2.2.1]헵트-2-엔, 5,6-디(2'-히드록시에틸)비시클로[2.2.1]헵트-2-엔, 5,6-디메톡시비시클로[2.2.1]헵트-2-엔, 5,6-디에톡시비시클로[2.2.1]헵트-2-엔, 5-히드록시-5-메틸비시클로[2.2.1]헵트-2-엔, 5-히드록시-5-에틸비시클로[2.2.1]헵트-2-엔, 5-히드록시메틸-5-메틸비시클로[2.2.1]헵트-2-엔, 5-tert-부톡시카르보닐비시클로[2.2.1]헵트-2-엔, 5-시클로헥실옥시카르보닐비시클로[2.2.1]헵트-2-엔, 5-페녹시카르보닐비시클로[2.2.1]헵트-2-엔, 5,6-비스(tert-부톡시카르보닐)비시클로[2.2.1]헵트-2-엔, 5,6-비스(시클로헥실옥시카르보닐)비시클로[2.2.1]헵트-2-엔 등의 비시클로 불포화 화합물류;2-ene, 5-methylbicyclo [2.2.1] hept-2-ene, 5-ethylbicyclo [2.2.1] hept- 2.2.1] hept-2-ene, 5- (2'-hydroxyethyl) bicyclo [2.2.1] hept- 2.2.1] hept-2-ene, 5-methoxybicyclo [2.2.1] (2'-hydroxyethyl) bicyclo [2.2.1] hept-2-ene, 5,6-di (hydroxymethyl) bicyclo [2.2.1] hept- Ene, 5,6-dimethoxybicyclo [2.2.1] hept-2-ene, 5,6-diethoxybicyclo [2.2.1] hept- 2.2.1] hept-2-ene, 5-hydroxymethyl-5-methylbicyclo [2.2.1] hept- 2-ene, 5-tert-butoxycarbonylbicyclo [2.2.1] hept-2-ene, 5-cyclohexyloxycarbonylbicyclo [2.2.1] hept- Cyclohexyl [2.2.1] hept-2-ene, 5,6-bis 2,6-bis (cyclohexyloxycarbonyl) bicyclo [2.2.1] hept-2-ene and the like such as bis (tert-butoxycarbonyl) bicyclo [2.2.1] hept- Cyclo-unsaturated compounds;
N-페닐말레이미드, N-시클로헥실말레이미드, N-벤질말레이미드, N-숙신이미딜-3-말레이미드벤조에이트, N-숙신이미딜-4-말레이미드부틸레이트, N-숙신이미딜-6-말레이미드카프로에이트, N-숙신이미딜-3-말레이미드프로피오네이트, N-(9-아크리디닐)말레이미드 등의 디카르보닐이미드 유도체류;N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-succinimidyl-3-maleimide benzoate, N-succinimidyl-4-maleimide butyrate, N- Dicarbonylimide derivatives such as N-succinimidyl-3-maleimidepropionate and N- (9-acridinyl) maleimide;
스티렌, α-메틸스티렌, m-메틸스티렌, p-메틸스티렌, 비닐톨루엔, p-메톡시스티렌, 아크릴로니트릴, 메타크릴로니트릴, 염화 비닐, 염화 비닐리덴, 아크릴아미드, 메타크릴아미드, 아세트산 비닐, 1,3-부타디엔, 이소프렌, 2,3-디메틸-1,3-부타디엔 등을 들 수 있다.And examples thereof include styrene,? -Methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxystyrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, Vinyl, 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene and the like.
이들 중, 공중합 반응성 및 내열성의 점에서, 스티렌, 비닐톨루엔, N-페닐말레이미드, N-시클로헥실말레이미드, N-벤질말레이미드, 비시클로[2.2.1]헵트-2-엔 등이 바람직하다.Of these, styrene, vinyltoluene, N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide and bicyclo [2.2.1] hept-2- ene are preferred from the viewpoint of copolymerization reactivity and heat resistance Do.
수지 [K1]에 있어서의 각 단량체에 유래하는 구조 단위의 비율은, 수지 [K1]을 구성하는 전체 구조 단위를 기준으로 하여, (a)에 유래하는 구조 단위가 2~70몰%이며, 또한 (c)에 유래하는 구조 단위가 30~98몰%인 것이 바람직하다. 또한 (a)에 유래하는 구조 단위가 10~70몰%이며, 또한 (c)에 유래하는 구조 단위가 30~90몰%인 것이 보다 바람직하다.The proportion of the structural unit derived from each monomer in the resin [K1] is preferably from 2 to 70 mol% based on the entire structural unit constituting the resin (K1), the structural unit derived from the structural unit (a) (c) is preferably 30 to 98 mol%. , More preferably 10 to 70 mol% of the structural unit derived from (a) and 30 to 90 mol% of the structural unit derived from (c).
수지 [K1]의 구조 단위의 비율이, 상기의 범위에 있으면, 경화성 조성물의 보존 안정성, 경화 패턴을 형성할 때의 현상성, 및 얻어지는 경화 패턴의 내용제성이 우수한 경향이 있다.When the ratio of the structural unit of the resin [K1] is within the above range, there is a tendency that the storage stability of the curable composition, the developability in forming the cured pattern, and the solvent resistance of the obtained cured pattern are excellent.
수지 [K1]은, 예를 들면, 문헌 「고분자 합성의 실험법」(오츠 타카유키저 발행소(주)화학동인 제 1 판 제 1 쇄 1972년 3월 1일 발행)에 기재된 방법 및 당해 문헌에 기재된 인용 문헌을 참고로 하여 제조할 수 있다.The resin [K1] can be synthesized by a method described in, for example, "Experimental Method of Polymer Synthesis" (published by the Chemical Society of Japan, 1st Edition, 1st Edition, March 1, 1972, Can be prepared by reference to the literature.
구체적으로는, (a) 및 (c)의 소정량, 중합 개시제 및 용제 등을 반응 용기 중에 넣어, 예를 들면, 질소에 의해 산소를 치환함으로써 탈산소 분위기로 하고, 교반하면서 가열 및 보온하는 방법을 들 수 있다. 또한, 여기서 이용되는 중합 개시제 및 용제는, 특별히 한정되지 않아, 당해 분야에서 통상 사용되고 있는 것을 사용할 수 있다. 예를 들면, 중합 개시제로서는, 아조 화합물(2,2'-아조비스이소부티로니트릴, 2,2'-아조비스(2,4-디메틸발레로니트릴) 등)이나 유기 과산화물(벤조일퍼옥사이드 등)을 들 수 있고, 용제로서는, 각 모노머를 용해하는 것이면 되고, 본 발명의 경화성 조성물에 포함되어도 되는 용제 (F)로서 후술하는 용제 등을 들 수 있다.Specifically, a predetermined amount of the components (a) and (c), a polymerization initiator and a solvent are placed in a reaction vessel, for example, by replacing oxygen by nitrogen, thereby obtaining a deoxidized atmosphere, . The polymerization initiator and the solvent to be used herein are not particularly limited and those generally used in the art can be used. Examples of the polymerization initiator include azo compounds (2,2'-azobisisobutylonitrile, 2,2'-azobis (2,4-dimethylvaleronitrile) and the like) and organic peroxides such as benzoyl peroxide As the solvent, any solvent may be used as long as it dissolves the respective monomers. As the solvent (F) which may be contained in the curable composition of the present invention, there may be mentioned a solvent described later.
또한, 얻어진 공중합체는, 반응 후의 용액을 그대로 사용해도 되고, 농축 혹은 희석한 용액을 사용해도 되며, 재침전 등의 방법으로 고체(분체)로서 취출한 것을 사용해도 된다. 특히, 이 중합 시의 용제로서, 후술의 용제 (F)를 사용함으로써, 반응 후의 용액을 그대로 본 발명의 경화성 조성물의 조제에 사용할 수 있기 때문에, 본 발명의 경화성 조성물의 제조 공정을 간략화할 수 있다.As the obtained copolymer, the solution after the reaction may be used as it is, or a concentrated or diluted solution may be used, or it may be taken out as a solid (powder) by a method such as re-precipitation. Particularly, since the solution after the reaction can be used as it is for preparing the curable composition of the present invention, the process for producing the curable composition of the present invention can be simplified by using the solvent (F) described later as the solvent in the polymerization .
수지 [K2]는, (a)와 (c)의 공중합체를 얻어, (b)가 가지는 탄소수 2~4의 환상 에테르를 (a)에 유래하는 카르본산 및/또는 카르본산 무수물에 부가시킴으로써 제조할 수 있다.Resin [K2] is obtained by obtaining a copolymer of (a) and (c) and adding a cyclic ether having 2 to 4 carbon atoms in (b) to a carboxylic acid and / or carboxylic anhydride derived from (a) can do.
우선, (a)와 (c)의 공중합체를, 수지 [K1]의 제조 방법으로서 기재한 방법과 동일하게 제조한다. 이 경우, 각각에 유래하는 구조 단위의 비율은, 수지 [K1]에서 든 것과 동일한 비율인 것이 바람직하다.First, the copolymer of (a) and (c) is prepared in the same manner as the method described as the method for producing the resin [K1]. In this case, the proportion of the structural units derived from each of them is preferably the same as that of the resin [K1].
이어서, 상기 공중합체 중의 (a)에 유래하는 카르본산 및/또는 카르본산 무수물의 일부에, (b)가 가지는 탄소수 2~4의 환상 에테르를 반응시킨다.Subsequently, a cyclic ether having 2 to 4 carbon atoms of (b) is allowed to react with a part of the carboxylic acid and / or carboxylic anhydride derived from (a) in the copolymer.
(a)와 (c)의 공중합체의 제조에 이어, 플라스크 내 분위기를 질소로부터 공기로 치환하고, (b), 카르본산 또는 카르본산 무수물과 환상 에테르간의 반응의 반응 촉매(예를 들면 트리스(디메틸아미노메틸)페놀 등) 및 중합 금지제(예를 들면 히드로퀴논) 등을 플라스크 내에 넣어, 예를 들면, 60~130℃로, 1~10시간 반응시킴으로써, 수지 [K2]를 제조할 수 있다.Subsequent to the preparation of the copolymer of (a) and (c), the atmosphere in the flask is replaced by air from nitrogen, (b) a reaction catalyst of reaction between carboxylic acid or carboxylic anhydride and cyclic ether, (K2) can be prepared, for example, by reacting at 60 to 130 占 폚 for 1 to 10 hours with a polymerization inhibitor (e.g., hydroquinone) or the like in a flask.
(b)의 사용량은, (a) 100몰에 대하여, 5~80몰이 바람직하고, 보다 바람직하게는 10~75몰이다. 이 범위로 함으로써, 경화성 조성물의 보존 안정성, 경화 패턴을 형성할 때의 현상성, 및, 얻어지는 경화 패턴의 내용제성, 내열성, 기계 강도 및 감도의 밸런스가 양호해지는 경향이 있다.(b) is preferably 5 to 80 moles, more preferably 10 to 75 moles, per 100 moles of (a). By setting this range, there is a tendency that the balance between the storage stability of the curable composition, the developability in forming a cured pattern, and the solvent resistance, heat resistance, mechanical strength and sensitivity of the resulting cured pattern are improved.
상기 반응 촉매의 사용량은, (a), (b) 및 (c)의 합계량 100질량부에 대하여 0.001~5질량부가 바람직하다. 상기 중합 금지제의 사용량은, (a), (b) 및 (c)의 합계량 100질량부에 대하여 0.001~5질량부가 바람직하다.The amount of the reaction catalyst to be used is preferably 0.001 to 5 parts by mass based on 100 parts by mass of the total amount of (a), (b) and (c). The amount of the polymerization inhibitor to be used is preferably 0.001 to 5 parts by mass per 100 parts by mass of the total amount of (a), (b) and (c).
넣는 방법, 반응 온도 및 시간 등의 반응 조건은, 제조 설비나 중합에 의한 발열량 등을 고려하여 적절히 조정할 수 있다. 또한, 중합 조건과 마찬가지로, 제조 설비나 중합에 의한 발열량 등을 고려하여, 넣는 방법이나 반응 온도를 적절히 조정할 수 있다.The reaction conditions such as the feeding method, the reaction temperature and the time can be appropriately adjusted in consideration of the production equipment or the amount of heat generated by polymerization. Also, in the same manner as the polymerization conditions, the method of charging and the reaction temperature can be appropriately adjusted in consideration of the production facility or the amount of heat generated by polymerization.
수지 [K3]은, 제 1 단계로서, 상기 서술한 수지 [K1]의 제조 방법과 동일하게 하여, (b)와 (c)의 공중합체를 얻는다. 상기와 마찬가지로, 얻어진 공중합체는, 반응 후의 용액을 그대로 사용해도 되고, 농축 혹은 희석한 용액을 사용해도 되며, 재침전 등의 방법으로 고체(분체)로서 취출한 것을 사용해도 된다.The resin [K3] is a first step, and the copolymer of (b) and (c) is obtained in the same manner as the resin [K1] described above. As in the case of the above, the solution after the reaction may be used as it is, or a concentrated or diluted solution may be used as the obtained copolymer, or it may be taken out as a solid (powder) by a method such as re-precipitation.
(b) 및 (c)에 유래하는 구조 단위의 비율은, 상기 공중합체를 구성하는 전체 구조 단위의 합계 몰수에 대하여, 각각 (b)에 유래하는 구조 단위가 5~95몰%이며, (c)에 유래하는 구조 단위가 5~95몰%인 것이 바람직하다. 또한, (b)에 유래하는 구조 단위가 10~90몰%이며, (c)에 유래하는 구조 단위가 10~90몰%인 것이 보다 바람직하다.the proportion of the structural units derived from (b) and (c) is in the range of 5 to 95 mol% based on the total moles of the total structural units constituting the copolymer, (c) ) Is preferably 5 to 95 mol%. It is more preferable that the structural unit derived from (b) is 10 to 90 mol%, and the structural unit derived from (c) is 10 to 90 mol%.
또한, 수지 [K2]의 제조 방법과 동일한 조건으로, (b)와 (c)의 공중합체가 가지는 (b)에 유래하는 환상 에테르에, (a)가 가지는 카르본산 또는 카르본산 무수물을 부가 반응시킴으로써, 수지 [K3]을 얻을 수 있다.The carboxylic acid or carboxylic acid anhydride of (a) is added to the cyclic ether derived from (b) of the copolymer of (b) and (c) under the same conditions as the method of producing the resin [K2] , Whereby resin [K3] can be obtained.
상기 공중합체에 반응시키는 (a)의 사용량은, (b) 100몰에 대하여, 5~80몰이 바람직하다.The amount of (a) to be reacted with the copolymer is preferably 5 to 80 moles per 100 moles of (b).
수지 [K4]는, 수지 [K3]에, 추가로 카르본산 무수물을 반응시킨 수지이다.The resin [K4] is a resin obtained by further reacting the resin [K3] with a carboxylic acid anhydride.
환상 에테르와 카르본산 또는 카르본산 무수물과의 반응에 의해 발생되는 히드록시기에, 카르본산 무수물을 부가 반응시킨다.The carboxylic acid anhydride is subjected to addition reaction to the hydroxyl group generated by the reaction of the cyclic ether and the carboxylic acid or the carboxylic acid anhydride.
카르본산 무수물로서는, 무수 말레산, 시트라콘산 무수물, 이타콘산 무수물, 3-비닐프탈산 무수물, 4-비닐프탈산 무수물, 3,4,5,6-테트라히드로프탈산 무수물, 1,2,3,6-테트라히드로프탈산 무수물, 디메틸테트라히드로프탈산 무수물, 5,6-디카르복시비시클로[2.2.1]헵트-2-엔 무수물 등을 들 수 있다. 카르본산 무수물의 사용량은, (a)의 사용량 1몰에 대하여, 0.5~1몰이 바람직하다.Examples of the carboxylic anhydrides include maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydrophthalic anhydride, 1,2,3,6 -Tetrahydrophthalic anhydride, dimethyltetrahydrophthalic anhydride, and 5,6-dicarboxybicyclo [2.2.1] hept-2-eno anhydride. The amount of the carboxylic acid anhydride to be used is preferably 0.5 to 1 mole based on 1 mole of the amount of (a).
수지 (E)로서는, 구체적으로, 벤질(메타)아크릴레이트/(메타)아크릴산 공중합체, 스티렌/(메타)아크릴산 공중합체 등의 수지 [K1]; 벤질(메타)아크릴레이트/(메타)아크릴산 공중합체에 글리시딜(메타)아크릴레이트를 부가시킨 수지, 트리시클로데실(메타)아크릴레이트/스티렌/(메타)아크릴산 공중합체에 글리시딜(메타)아크릴레이트를 부가시킨 수지, 트리시클로데실(메타)아크릴레이트/벤질(메타)아크릴레이트/(메타)아크릴산 공중합체에 글리시딜(메타)아크릴레이트를 부가시킨 수지 등의 수지 [K2]; 트리시클로데실(메타)아크릴레이트/글리시딜(메타)아크릴레이트의 공중합체에 (메타)아크릴산을 반응시킨 수지, 트리시클로데실(메타)아크릴레이트/스티렌/글리시딜(메타)아크릴레이트의 공중합체에 (메타)아크릴산을 반응시킨 수지 등의 수지 [K3]; 트리시클로데실(메타)아크릴레이트/글리시딜(메타)아크릴레이트의 공중합체에 (메타)아크릴산을 반응시킨 수지에 추가로 테트라히드로프탈산 무수물을 반응시킨 수지 등의 수지 [K4] 등을 들 수 있다.Specific examples of the resin (E) include resins [K1] such as benzyl (meth) acrylate / (meth) acrylic acid copolymer and styrene / (meth) acrylic acid copolymer; A resin obtained by adding glycidyl (meth) acrylate to a benzyl (meth) acrylate / (meth) acrylic acid copolymer, a resin obtained by adding glycidyl (meth) acrylate to a tricyclodecyl (meth) acrylate / styrene / (K2) such as a resin obtained by adding glycidyl (meth) acrylate to a tricyclodecyl (meth) acrylate / benzyl (meth) acrylate / (meth) acrylic acid copolymer; A resin obtained by reacting a copolymer of tricyclodecyl (meth) acrylate / glycidyl (meth) acrylate with (meth) acrylic acid, a resin obtained by reacting tricyclodecyl (meth) acrylate / styrene / glycidyl (meth) A resin [K3] such as a resin obtained by reacting (meth) acrylic acid with a copolymer; A resin [K4] such as a resin obtained by reacting a (meth) acrylic acid with a copolymer of tricyclodecyl (meth) acrylate / glycidyl (meth) acrylate in addition to tetrahydrophthalic anhydride have.
그 중에서도, 수지 (E)로서는, 수지 [K2], 수지 [K3] 및 수지 [K4]로 이루어지는 군으로부터 선택되는 적어도 일종을 포함하는 것이 바람직하다.Among them, it is preferable that the resin (E) includes at least one kind selected from the group consisting of resin [K2], resin [K3] and resin [K4].
수지 (E)의 폴리스티렌 환산의 중량 평균 분자량은, 바람직하게는 3,000~100,000이며, 보다 바람직하게는 5,000~50,000이고, 더 바람직하게는 5,000~30,000이다. 분자량이 상기 범위 내에 있으면, 경화막의 경도가 향상되고, 경화 패턴의 잔막율이 높으며, 조성물층에 있어서의 미노광부의 현상액에 대한 용해성이 양호하여, 경화 패턴의 해상도가 향상되는 경향이 있다.The weight average molecular weight of the resin (E) in terms of polystyrene is preferably 3,000 to 100,000, more preferably 5,000 to 50,000, and still more preferably 5,000 to 30,000. When the molecular weight is within the above range, the hardness of the cured film is improved, the residual film ratio of the cured pattern is high, the solubility of the unexposed portion in the developer in the composition layer is good, and the resolution of the cured pattern tends to be improved.
수지 (E)의 분자량 분포[중량 평균 분자량(Mw)/수평균 분자량(Mn)]는, 바람직하게는 1.1~6이며, 보다 바람직하게는 1.2~4이다.The molecular weight distribution (weight average molecular weight (Mw) / number average molecular weight (Mn)) of the resin (E) is preferably 1.1 to 6, and more preferably 1.2 to 4.
수지 (E)의 산가는, 바람직하게는 50~170mg-KOH/g이며, 보다 바람직하게는 60~150mg-KOH/g, 더 바람직하게는 70~135mg-KOH/g이다. 여기서 산가는 수지 (E) 1g을 중화하는데 필요한 수산화 칼륨의 양(mg)으로서 측정되는 값이며, 예를 들면 수산화 칼륨 수용액을 이용하여 적정(滴定)함으로써 구할 수 있다.The acid value of the resin (E) is preferably 50 to 170 mg-KOH / g, more preferably 60 to 150 mg-KOH / g, and even more preferably 70 to 135 mg-KOH / g. Here, the acid value is a value measured as the amount (mg) of potassium hydroxide necessary for neutralizing 1 g of the resin (E), and can be determined by, for example, titration using an aqueous potassium hydroxide solution.
수지 (E)의 함유량은, 고형분의 총량에 대하여, 바람직하게는 7~65질량%이며, 보다 바람직하게는 13~60질량%이고, 더 바람직하게는 17~55질량%이다. 수지 (E)의 함유량이, 상기 범위 내에 있으면, 경화 패턴의 해상도 및 경화 패턴의 잔막율이 보다 향상되는 경향이 있다.The content of the resin (E) is preferably from 7 to 65% by mass, more preferably from 13 to 60% by mass, and still more preferably from 17 to 55% by mass, based on the total solid content. When the content of the resin (E) is within the above range, the resolution of the cured pattern and the residual film ratio of the cured pattern tend to be further improved.
<용제 (F)>≪ Solvent (F) >
용제 (F)는, 중합성 화합물 (B), 중합 개시제 (C), 티올 화합물 (D) 및 수지 (E)를 용해하는 것이면 특별히 한정되지 않고, 당해 분야에서 통상 사용되는 용제를 이용할 수 있다. 예를 들면, 에스테르 용제(분자 내에 -COO-를 포함하고, -O-를 포함하지 않는 용제), 에테르 용제(분자 내에 -O-를 포함하고, -COO-를 포함하지 않는 용제), 에테르에스테르 용제(분자 내에 -COO-와 -O-를 포함하는 용제), 케톤 용제(분자 내에 -CO-를 포함하고, -COO-를 포함하지 않는 용제), 알코올 용제(분자 내에 OH를 포함하고, -O-, -CO- 및 -COO-를 포함하지 않는 용제), 방향족 탄화수소 용제, 아미드 용제, 디메틸술폭시드 등을 들 수 있다.The solvent (F) is not particularly limited as long as it dissolves the polymerizable compound (B), the polymerization initiator (C), the thiol compound (D) and the resin (E), and a solvent commonly used in the art can be used. For example, an ester solvent (a solvent containing -COO- in the molecule and containing no -O-), an ether solvent (a solvent containing -O- and no -COO- in the molecule), an ether ester (Solvent containing -COO- and -O- in the molecule), ketone solvent (solvent containing -CO- in the molecule and not including -COO-), alcohol solvent (containing OH in the molecule, O-, -CO- and -COO-), aromatic hydrocarbon solvents, amide solvents, dimethylsulfoxide and the like.
에스테르 용제로서는, 젖산 메틸, 젖산 에틸, 젖산 n-부틸, 2-히드록시이소부탄산 메틸, 아세트산 에틸, 아세트산 n-부틸, 아세트산 이소부틸, 포름산 n-펜틸, 아세트산 이소펜틸, 프로피온산 n-부틸, 부티르산 이소프로필, 부티르산 에틸, 부티르산 n-부틸, 피루빈산 메틸, 피루빈산 에틸, 피루빈산 프로필, 아세토아세트산 메틸, 아세토아세트산 에틸, 시클로헥산올아세테이트 및 γ-부티로락톤 등을 들 수 있다.Examples of the ester solvent include methyl lactate, ethyl lactate, n-butyl lactate, methyl 2-hydroxyisobutyrate, ethyl acetate, n-butyl acetate, isobutyl acetate, n-pentyl formate, isopentyl acetate, n-butyl propionate, Butyl acetate, methyl isobutyrate, ethyl isobutyrate, ethyl isobutyrate, n-butyl butyrate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, cyclohexanol acetone and γ-butyrolactone.
에테르 용제로서는, 에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노프로필에테르, 에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노부틸에테르, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르, 3-메톡시-1-부탄올, 3-메톡시-3-메틸부탄올, 테트라히드로푸란, 테트라히드로피란, 1,4-디옥산, 디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르, 디에틸렌글리콜메틸에틸에테르, 디에틸렌글리콜디프로필에테르, 디에틸렌글리콜디부틸에테르, 아니솔, 페네톨 및 메틸아니솔 등을 들 수 있다.Examples of the ether solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene Propylene glycol monopropyl ether, propylene glycol monobutyl ether, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, tetrahydrofuran, tetrahydropyran, 1,4-dioxane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, anisole, And the like.
에테르에스테르 용제로서는, 메톡시아세트산 메틸, 메톡시아세트산 에틸, 메톡시아세트산 부틸, 에톡시아세트산 메틸, 에톡시아세트산 에틸, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸, 2-메톡시프로피온산 메틸, 2-메톡시프로피온산 에틸, 2-메톡시프로피온산 프로필, 2-에톡시프로피온산 메틸, 2-에톡시프로피온산 에틸, 2-메톡시-2-메틸프로피온산 메틸, 2-에톡시-2-메틸프로피온산 에틸, 3-메톡시부틸아세테이트, 3-메틸-3-메톡시부틸아세테이트, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르아세테이트, 프로필렌글리콜모노프로필에테르아세테이트, 에틸렌글리콜모노메틸에테르아세테이트, 에틸렌글리콜모노에틸에테르아세테이트, 디에틸렌글리콜모노에틸에테르아세테이트 및 디에틸렌글리콜모노부틸에테르아세테이트 등을 들 수 있다.Examples of the ether ester solvent include methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate , Ethyl 3-ethoxypropionate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, Methyl propionate, methyl propionate, methyl 2-ethoxy-2-methyl propionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol mono Propyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether Teracetate and diethylene glycol monobutyl ether acetate, and the like.
케톤 용제로서는, 4-히드록시-4-메틸-2-펜타논, 아세톤, 2-부탄온, 2-헵탄온, 3-헵탄온, 4-헵탄온, 4-메틸-2-펜타논, 시클로펜타논, 시클로헥사논 및 이소포론 등을 들 수 있다.Examples of the ketone solvent include 4-hydroxy-4-methyl-2-pentanone, acetone, 2-butanone, 2-heptanone, 3-heptanone, Pentanone, cyclohexanone, and isophorone.
알코올 용제로서는, 메탄올, 에탄올, 프로판올, 부탄올, 헥산올, 시클로헥산올, 에틸렌글리콜, 프로필렌글리콜 및 글리세린 등을 들 수 있다.Examples of the alcohol solvent include methanol, ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, propylene glycol and glycerin.
방향족 탄화수소 용제로서는, 벤젠, 톨루엔, 크실렌 및 메시틸렌 등을 들 수 있다.Examples of the aromatic hydrocarbon solvent include benzene, toluene, xylene, and mesitylene.
아미드 용제로서는, N,N-디메틸포름아미드, N,N-디메틸아세트아미드 및 N-메틸피롤리돈 등을 들 수 있다.Examples of the amide solvent include N, N-dimethylformamide, N, N-dimethylacetamide and N-methylpyrrolidone.
용제로서는, 프로필렌글리콜모노메틸에테르아세테이트, 젖산 에틸, 프로필렌글리콜모노메틸에테르, 3-에톡시프로피온산 에틸, 에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 4-히드록시-4-메틸-2-펜타논 또는 톨루엔이 바람직하다.As the solvent, propylene glycol monomethyl ether acetate, ethyl lactate, propylene glycol monomethyl ether, ethyl 3-ethoxypropionate, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, -4-methyl-2-pentanone or toluene is preferred.
용제 (F)의 함유율은, 경화성 조성물의 총량에 대하여, 바람직하게는 70~95질량%이며, 보다 바람직하게는 75~92질량%이다. 바꿔 말하면, 경화성 조성물의 고형분은, 바람직하게는 5~30질량%, 보다 바람직하게는 8~25질량%이다. 용제 (F)의 함유량이 상기 범위 내에 있으면, 도포 시의 조성물층의 평탄성이 보다 양호해지고, 또한 적절한 막 두께의 경화막을 형성하기 쉬운 경향이 있다.The content of the solvent (F) is preferably 70 to 95% by mass, and more preferably 75 to 92% by mass, based on the total amount of the curable composition. In other words, the solid content of the curable composition is preferably 5 to 30% by mass, and more preferably 8 to 25% by mass. When the content of the solvent (F) is within the above range, the flatness of the composition layer at the time of coating tends to be better, and a cured film having an appropriate film thickness tends to be easily formed.
<레벨링제 (G)>≪ Leveling agent (G) >
레벨링제 (G)로서는, 실리콘계 계면활성제, 불소계 계면활성제 및 불소 원자를 가지는 실리콘계 계면활성제 등을 들 수 있다. 이들은, 측쇄에 중합성기를 가져도 된다.Examples of the leveling agent (G) include a silicone surfactant, a fluorinated surfactant, and a silicon surfactant having a fluorine atom. These may have a polymerizable group in the side chain.
실리콘계 계면활성제로서는, 분자 내에 실록산 결합을 가지는 계면활성제 등을 들 수 있다. 구체적으로는, 도레이실리콘 DC3PA, 동(同) SH7PA, 동 DC11PA, 동 SH21PA, 동 SH28PA, 동 SH29PA, 동 SH30PA, 동 SH8400(상품명: 도레이·다우코닝(주)제), KP321, KP322, KP323, KP324, KP326, KP340, KP341(신에츠화학공업(주)제), TSF400, TSF401, TSF410, TSF4300, TSF4440, TSF4445, TSF4446, TSF4452 및 TSF4460(모멘티브·퍼포먼스·머티리얼즈·재팬 합동회사제) 등을 들 수 있다.Examples of the silicone surfactant include a surfactant having a siloxane bond in the molecule. Specifically, TORAY Silicon DC3PA, copper SH7PA, copper DC11PA, copper SH21PA, copper SH28PA, copper SH29PA, copper SH30PA, copper SH8400 (trade name; manufactured by Toray Dow Corning Co., Ltd.), KP321, KP322, KP323, KP324, KP340, KP341 (manufactured by Shin-Etsu Chemical Industry Co., Ltd.), TSF400, TSF401, TSF410, TSF4300, TSF4440, TSF4445, TSF4446, TSF4452 and TSF4460 (manufactured by Momentive Performance Materials Japan Joint- .
상기 불소계 계면활성제로서는, 분자 내에 플루오로카본쇄를 가지는 계면활성제 등을 들 수 있다. 구체적으로는, 플루오라드(등록상표) FC430, 동 FC431(스미토모스리엠(주)제), 메가팩(등록상표) F142D, 동 F171, 동 F172, 동 F173, 동 F177, 동 F183, 동 F554, 동 R30, 동 RS-718-K(DIC(주)제), 에프탑(등록상표) EF301, 동 EF303, 동 EF351, 동 EF352(미츠비시머티리얼 전자화성(주)제), 서프론(등록상표) S381, 동 S382, 동 SC101, 동 SC105(아사히글라스(주)제) 및 E5844((주) 다이킨파인케미컬 연구소제) 등을 들 수 있다.Examples of the fluorine-based surfactant include a surfactant having a fluorocarbon chain in the molecule. Concretely, fluororads (registered trademark) FC430, FC431 (manufactured by Sumitomo 3M Ltd.), Megapack (registered trademark) F142D, copper F171, copper F172, copper F173, copper F177, copper F183, copper F554, (Trade name) manufactured by Mitsubishi Materials Electronics Co., Ltd.), RS-718-K (manufactured by DIC Corporation), Eftop EF301, EF303, EF351 and EF352 S381, S382, SC101, SC105 (manufactured by Asahi Glass Co., Ltd.) and E5844 (manufactured by Daikin Fine Chemical Research Institute).
상기 불소 원자를 가지는 실리콘계 계면활성제로서는, 분자 내에 실록산 결합 및 플루오로카본쇄를 가지는 계면활성제 등을 들 수 있다. 구체적으로는, 메가팩(등록상표) R08, 동 BL20, 동 F475, 동 F477 및 동 F443(DIC(주)제) 등을 들 수 있다.Examples of the silicone surfactant having a fluorine atom include a surfactant having a siloxane bond and a fluorocarbon chain in the molecule. Specific examples thereof include Megapac (registered trademark) R08, BL20, F475, F477 and F443 (manufactured by DIC).
레벨링제 (G)의 함유량은, 경화성 조성물의 총량에 대하여, 바람직하게는 0.001질량% 이상 0.2질량% 이하이며, 바람직하게는 0.002질량% 이상 0.1질량% 이하, 보다 바람직하게는 0.01질량% 이상 0.05질량% 이하이다. 레벨링제 (G)의 함유량이 상기 범위 내에 있으면, 경화막의 평탄성을 보다 양호하게 할 수 있다.The content of the leveling agent (G) is preferably 0.001 mass% or more and 0.2 mass% or less, preferably 0.002 mass% or more and 0.1 mass% or less, more preferably 0.01 mass% or more and 0.05 mass or less, % Or less. When the content of the leveling agent (G) is within the above range, the flatness of the cured film can be further improved.
또한, 본 발명의 경화성 조성물에는 필요에 따라, 충전제, 다른 고분자 화합물, 밀착 촉진제, 산화 방지제, 광안정제, 연쇄 이동제 등, 당해 기술분야에서 공지된 첨가제가 더 포함되어도 된다.The curable composition of the present invention may further contain additives known in the art, such as fillers, other polymer compounds, adhesion promoters, antioxidants, light stabilizers, chain transfer agents and the like, if necessary.
<경화막><Cured film>
본 발명의 경화막은, 본 발명의 경화성 조성물을 기판에 도포하고, 광 또는 열의 작용으로 경화시킴으로써 얻을 수 있다. 본 발명의 경화막은, 상기 기판 전체 면에 형성되어도 되고, 상기 기판의 일부에 형성되어도 된다(즉 경화 패턴). 상기 기판의 일부에 경화막을 형성하는 방법으로서는, 포토리소그래프법, 잉크젯법, 인쇄법 등을 들 수 있다. 그 중에서도, 포토리소그래프법이 바람직하다. 포토리소그래프법은, 본 발명의 경화성 조성물을 기판에 도포하고, 필요에 따라 건조시켜 조성물층을 형성하며, 포토마스크를 개재하여 당해 조성물층을 노광하고, 현상하는 방법이다.The cured film of the present invention can be obtained by applying the curable composition of the present invention to a substrate and curing it by the action of light or heat. The cured film of the present invention may be formed on the entire surface of the substrate or on a part of the substrate (i.e., a curing pattern). Examples of a method for forming a cured film on a part of the substrate include a photolithography method, an inkjet method, and a printing method. Among them, a photolithographic method is preferable. The photolithography method is a method in which the curable composition of the present invention is applied to a substrate, dried as necessary to form a composition layer, and exposed and developed through the photomask.
기판 전체 면에 경화막을 형성하는 방법으로서는, 본 발명의 경화성 조성물을 기판에 도포하고, 필요에 따라 건조시켜 조성물층을 형성하며, 당해 조성물층을 가열 및/또는 당해 조성물층 전체 면에 노광하는 방법을 들 수 있다.As a method for forming a cured film on the entire surface of the substrate, there can be cited a method of applying the curable composition of the present invention to a substrate, drying it if necessary to form a composition layer, and heating the composition layer and / .
기판으로서는, 석영 유리, 붕규산 유리, 알루미나 규산염 유리, 표면을 실리카 코팅한 소다라임 유리 등의 유리판이나, 폴리카보네이트, 폴리메타크릴산 메틸, 폴리에틸렌테레프탈레이트 등의 수지판, 실리콘, 상기 기판 상에 알루미늄, 은, 은/구리/팔라듐 합금 박막 등을 형성한 것 등을 들 수 있다.Examples of the substrate include glass plates such as quartz glass, borosilicate glass, alumina silicate glass and soda lime glass whose surface is coated with a silica, resin plates such as polycarbonate, polymethylmethacrylate and polyethylene terephthalate, silicon, , Silver, a silver / copper / palladium alloy thin film, and the like.
포토리소그래프법에 의한 경화 패턴의 형성은, 공지 또는 관용의 장치나 조건으로 행할 수 있다. 예를 들면, 아래와 같이 하여 제조할 수 있다.Formation of a cured pattern by the photolithographic method can be carried out by a known apparatus or condition. For example, it can be manufactured as follows.
우선, 경화성 조성물을 기판 상에 도포하고, 가열 건조(프리베이크) 및/또는 감압 건조시킴으로써 용제 등의 휘발 성분을 제거하여, 조성물층을 얻는다. 도포 방법으로서는, 스핀 코트법, 슬릿 코트법, 슬릿 앤드 스핀 코트법 등을 들 수 있다.First, the curable composition is applied on a substrate, and the composition is dried by heating (prebaking) and / or drying under reduced pressure to remove volatile components such as a solvent to obtain a composition layer. Examples of the application method include a spin coat method, a slit coat method, and a slit and spin coat method.
가열 건조를 행하는 경우의 온도는, 30~120℃가 바람직하고, 50~110℃가 보다 바람직하다. 또한 가열 시간으로서는, 10초간~60분간인 것이 바람직하고, 30초간~30분간인 것이 보다 바람직하다.The temperature in the case of heat drying is preferably 30 to 120 ° C, more preferably 50 to 110 ° C. The heating time is preferably 10 seconds to 60 minutes, more preferably 30 seconds to 30 minutes.
감압 건조를 행하는 경우에는, 50~150Pa의 압력하, 20~25℃의 온도 범위로 행하는 것이 바람직하다.In the case of performing the reduced-pressure drying, it is preferable that the drying is carried out at a temperature of 20 to 25 캜 under a pressure of 50 to 150 Pa.
조성물층의 막 두께는, 특별히 한정되지 않고, 목적으로 하는 경화 패턴의 막 두께에 따라 적절히 선택하면 된다.The film thickness of the composition layer is not particularly limited and may be appropriately selected depending on the film thickness of the intended curing pattern.
이어서, 조성물층은, 목적의 경화 패턴을 형성하기 위한 포토마스크를 개재하여 노광된다. 당해 포토마스크 상의 패턴은 특별히 한정되지 않는다.Subsequently, the composition layer is exposed through a photomask for forming a target curing pattern. The pattern on the photomask is not particularly limited.
노광에 이용되는 광원으로서는, 250~450㎚의 파장의 광을 발생시키는 광원이 바람직하다. 예를 들면, 당해 파장의 광으로부터, 중합 개시제의 흡수 파장에 따라, 436㎚ 부근, 408㎚ 부근, 또는 365㎚ 부근의 광을, 밴드 패스 필터에 의해 선택적으로 취출해도 된다. 구체적으로는, 수은등, 발광 다이오드, 메탈할라이드 램프, 할로겐 램프 등을 들 수 있다.As a light source used for exposure, a light source that generates light having a wavelength of 250 to 450 nm is preferable. For example, light of about 436 nm, about 408 nm, or around 365 nm may be selectively extracted from the light of the wavelength by the band-pass filter depending on the absorption wavelength of the polymerization initiator. Specific examples thereof include mercury lamps, light emitting diodes, metal halide lamps, and halogen lamps.
노광면 전체에 균일하게 평행 광선을 조사하거나, 포토마스크와 조성물층이 형성된 기판과의 정확한 위치 맞춤을 행할 수 있기 때문에, 마스크 얼라이너 및 스테퍼 등의 노광 장치를 사용하는 것이 바람직하다. 노광된 조성물층은, 당해 조성물층에 포함되는 중합성 화합물 등이 중합됨으로써 경화된다.It is preferable to use an exposure apparatus such as a mask aligner and a stepper to uniformly irradiate the entire exposure surface with a parallel light beam or accurately align the photomask with the substrate on which the composition layer is formed. The exposed composition layer is cured by polymerizing a polymerizable compound or the like contained in the composition layer.
노광 후의 조성물층을 현상액에 접촉시켜 현상함으로써, 조성물층의 미노광부가 현상액에 용해되어 제거되어, 경화 패턴이 얻어진다. 현상액으로서는, 예를 들면, 수산화 칼륨, 탄산 수소나트륨, 탄산 나트륨, 수산화 테트라메틸암모늄 등의 알칼리성 화합물의 수용액이나 유기 용제를 들 수 있다. 알칼리성 화합물의 수용액 중의 농도는, 바람직하게는 0.01~10질량%이며, 보다 바람직하게는 0.03~5질량%이다. 유기 용제로서는, 상기 서술한 용제 (F)와 동일한 것을 들 수 있다. 또한, 현상액은, 계면활성제를 포함해도 된다.The exposed composition layer is brought into contact with a developing solution and developed, whereby the unexposed portion of the composition layer is dissolved and removed in the developing solution to obtain a cured pattern. Examples of the developer include an aqueous solution of an alkaline compound such as potassium hydroxide, sodium hydrogencarbonate, sodium carbonate, tetramethylammonium hydroxide, and organic solvents. The concentration of the alkaline compound in the aqueous solution is preferably 0.01 to 10% by mass, and more preferably 0.03 to 5% by mass. The organic solvent may be the same as the solvent (F) described above. Further, the developer may contain a surfactant.
현상 방법은, 패들법, 디핑법 및 스프레이법 등 중 어느 것이어도 된다. 또한 현상 시에 기판을 임의의 각도로 기울여도 된다.The developing method may be any of paddle method, dipping method and spray method. Further, the substrate may be inclined at an arbitrary angle during development.
현상에 의해 얻어진 경화 패턴에, 추가로 가열(포스트 베이크)을 행하는 것이 바람직하다. 가열 온도는, 150~250℃가 바람직하고, 160~235℃가 보다 바람직하다. 가열 시간은, 1~120분간이 바람직하고, 10~60분간이 보다 바람직하다. 현상 후에 가열을 행함으로써, 경화 패턴에 포함되는 미반응의 중합성 화합물 등의 중합을 진행시킬 수 있기 때문에, 보다 내약품성이 우수한 경화 패턴을 얻을 수 있다.It is preferable to further heat (post-baking) the cured pattern obtained by the development. The heating temperature is preferably 150 to 250 占 폚, more preferably 160 to 235 占 폚. The heating time is preferably 1 to 120 minutes, more preferably 10 to 60 minutes. By heating after development, the polymerization of the unreacted polymerizable compound or the like contained in the cured pattern can be promoted, so that a cured pattern having better chemical resistance can be obtained.
자외광 또는 가시광을 경화막에 대하여 조사함으로써, 본 발명의 경화막은, 조사광과는 상이한 파장의 광을 발광한다. 본 발명의 경화막을 형성할 때에 이용하는 경화성 조성물에 있어서, 당해 경화성 조성물에 포함되는 양자점의 성분이나 입자경을 선택함으로써, 발광하는 광의 파장을 선택할 수 있다.By irradiating ultraviolet light or visible light to the cured film, the cured film of the present invention emits light of a wavelength different from that of the irradiated light. In the curable composition used for forming the cured film of the present invention, the wavelength of the light emitted can be selected by selecting the components and particle diameters of the quantum dots contained in the curable composition.
본 발명의 경화막은, 상기 서술한 바와 같이 조사 광의 파장을 변환하는 기능을 가지기 때문에, 표시 장치의 색 변환층으로서 이용 가능하다. 이러한 표시 장치로서는, 예를 들면, 일본 공개특허 특개2006-309219호 공보, 일본 공개특허 특개2006-310303호 공보, 일본 공개특허 특개2013-15812호 공보, 일본 공개특허 특개2009-251129호 공보, 일본 공개특허 특개2014-2363호 공보 등에 기재되는 표시 장치를 들 수 있다.Since the cured film of the present invention has a function of changing the wavelength of the irradiation light as described above, it can be used as a color conversion layer of a display device. As such a display device, for example, Japanese Laid-Open Patent Publication Nos. 2006-309219, 2006-310303, 2013-15812, 2009-251129, And a display device described in Japanese Patent Application Laid-Open No. 2014-2363.
본 발명의 경화성 조성물은, 현상 시에 높은 잔막율로 경화 패턴을 얻을 수 있고, 또한 당해 경화 패턴은, 발광시켰을 때의 양자 수율이 우수하기 때문에, 표시 장치, 특히, 액정 표시 장치의 색 변환층으로서 유용하다.The curable composition of the present invention can obtain a cured pattern at a high residual film ratio during development and the cured pattern has excellent quantum yield when light is emitted, .
실시예Example
이하, 실시예에 의해 본 발명에 대해, 보다 상세하게 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples.
예 중의 「%」 및 「부(部)」는, 특별히 기재하지 않는 한, 질량% 및 질량부이다.In the examples, "% " and " part (s) "
합성예 1Synthesis Example 1
교반 장치, 적하 깔때기, 콘덴서, 온도계 및 가스 도입관을 구비한 플라스크에 프로필렌글리콜모노메틸에테르아세테이트 100부를 넣고, 질소 치환하면서 교반하여 120℃로 승온시켰다. 이어서, 벤질메타크릴레이트 40부 및 메타크릴산 20부로 이루어지는 모노머 혼합물에 중합 개시제 2,2'-아조비스(2,4-디메틸발레로니트릴)을 모노머 혼합물 100부에 대하여 1부 첨가한 것을 적하 깔때기로부터 2시간에 걸쳐 플라스크에 적하하고, 또한, 120℃에서 2시간 교반하여 공중합체 용액을 얻었다. 이어서, 플라스크 내를 공기 치환으로 전환하고, 글리시딜메타크릴레이트 10부, 트리페닐포스핀 0.44부 및 메틸히드로퀴논 0.08부를 상기 공중합체 용액 중에 투입하고, 또한 120℃에서 반응을 계속해 고형분 산가가 130KOHmg/g이 되었을 때 반응을 종료했다. 이에, 프로필렌글리콜모노메틸에테르아세테이트 80부를 첨가함으로써, 고형분 30%의 수지 E1 용액을 얻었다. 수지 E1의 중량 평균 분자량은 3.0×104였다.Into a flask equipped with a stirrer, a dropping funnel, a condenser, a thermometer and a gas introducing tube, 100 parts of propylene glycol monomethyl ether acetate was added and stirred while replacing nitrogen, and the temperature was raised to 120 ° C. Subsequently, 1 part of the polymerization initiator 2,2'-azobis (2,4-dimethylvaleronitrile) was added to 100 parts of the monomer mixture in a monomer mixture composed of 40 parts of benzyl methacrylate and 20 parts of methacrylic acid, Was added dropwise from the funnel over 2 hours to the flask, and further stirred at 120 DEG C for 2 hours to obtain a copolymer solution. Next, 10 parts of glycidyl methacrylate, 0.44 part of triphenylphosphine, and 0.08 part of methylhydroquinone were added to the copolymer solution, and the reaction was continued at 120 ° C. to obtain a copolymer having a solid content of acid value of 130 KOH mg / g, the reaction was terminated. Thus, 80 parts of propylene glycol monomethyl ether acetate was added to obtain a resin E1 solution having a solid content of 30%. The weight average molecular weight of Resin E1 was 3.0 x 10 4 .
수지의 중량 평균 분자량(Mw)의 측정은, GPC법에 의해, 이하의 조건으로 행했다.The weight average molecular weight (Mw) of the resin was measured by the GPC method under the following conditions.
장치; K2479 ((주)시마즈제작소제)Device; K2479 (manufactured by Shimadzu Corporation)
칼럼; SHIMADZU Shim-pack GPC-80Mcolumn; SHIMADZU Shim-pack GPC-80M
칼럼 온도; 40℃Column temperature; 40 ℃
용매; 테트라히드로푸란menstruum; Tetrahydrofuran
유속; 1.0mL/minFlow rate; 1.0 mL / min
검출기; RIDetector; RI
교정용 표준 물질; TSK STANDARD POLYSTYRENE F-40, F-4, F-288, A-2500, A-500(토소(주)제)Calibration standards; TSK STANDARD POLYSTYRENE F-40, F-4, F-288, A-2500, A-500 (manufactured by Tosoh Corporation)
<경화성 조성물의 조제><Preparation of Curable Composition>
경화성 조성물의 조제에는, 이하의 것을 각각 사용했다.The following were used for the preparation of the curable composition, respectively.
(A) 양자점(A) Quantum dot
CZ520: NN-LABS사제의 양자점, 10% 톨루엔 분산액, 코어 셸형(코어: CdSe, 셸: ZnS).CZ520: quantum dot, 10% toluene dispersion, core shell type (core: CdSe, shell: ZnS) manufactured by NN-LABS.
CZ620: NN-LABS사제의 양자점, 10% 톨루엔 분산액, 코어 셸형(코어: CdSe, 셸: ZnS).CZ620: Quantum dots of NN-LABS, 10% toluene dispersion, core shell type (core: CdSe, shell: ZnS).
(B) 중합성 화합물(B) a polymerizable compound
KAYARAD(등록상표) DPHA: 니혼카야쿠(주)제, 디펜타에리스리톨헥사아크릴레이트.KAYARAD (registered trademark) DPHA: dipentaerythritol hexaacrylate, manufactured by Nippon Kayaku Co., Ltd.
(C) 중합 개시제(C) Polymerization initiator
이르가큐어(등록상표) 907: BASF사제의 아미노알킬페논, 2-메틸-1-(4-메틸술파닐페닐)-2-모르폴리노프로판-1-온.Irgacure (registered trademark) 907: aminoalkylphenone manufactured by BASF, 2-methyl-1- (4-methylsulfanylphenyl) -2-morpholinopropane-1-one.
이르가큐어(등록상표) OXE01: BASF사제의 옥심 화합물, N-벤조일옥시-1-(4-페닐술파닐페닐)옥탄-1-온-2-이민.Irgacure (registered trademark) OXE01: an oxime compound manufactured by BASF, N-benzoyloxy-1- (4-phenylsulfanylphenyl) octan-1-one-2-imine.
(D) 티올 화합물(D) Thiol compound
PEMP: SC 유기화학(주)제, 펜타에리스리톨테트라키스(3-술파닐프로피오네이트)PEMP: manufactured by SC Organic Chemicals, pentaerythritol tetrakis (3-sulfanyl propionate)
(F) 레벨링제(F) Leveling agent
도레이실리콘 SH8400: 도레이다우코닝(주)의 상품, 폴리에테르 변성 실리콘 오일.Toray Silicone SH8400: a product of Toray Dow Corning Co., Ltd., a polyether-modified silicone oil.
〔실시예 1〕[Example 1]
(A) 양자점 "CZ520"을 240부, 및 빅케미·재팬(주)제의 "DISPERBYK-180(주성분: 산기를 포함하는 공중합물의 알킬올암모늄염)"을 24부 혼합하고, 비드밀에 의해 양자점을 충분히 분산시켜 양자점 분산액을 조제했다. 계속해서, (B) 중합성 화합물 "KAYARAD DPHA"를 40부, (C) 중합 개시제 "이르가큐어 907"을 8부, (D) 티올 화합물 "PEMP"를 3부, (E) 수지로서 수지 E1을 60부(고형분 환산), (F) 용제로서 프로필렌글리콜모노메틸에테르아세테이트를 654부, 및 (G) 레벨링제 "도레이실리콘 SH8400"을 0.1부 혼합하여 경화성 조성물을 얻었다.(A) 240 parts of a quantum dot "CZ520" and 24 parts of "DISPERBYK-180" (trade name: alkylol ammonium salt of a copolymer containing a main component and an acid group) produced by Big Chem Japan Co., Was sufficiently dispersed to prepare a quantum dot dispersion. Subsequently, 40 parts of (B) a polymerizable compound "KAYARAD DPHA", 8 parts of a polymerization initiator "Irgacure 907" as a polymerization initiator (C), 3 parts of a thiol compound "PEMP" 654 parts of E1 as a solvent (in terms of solid content), (F) 654 parts of propylene glycol monomethyl ether acetate as a solvent, and (G) 0.1 part of a leveling agent "Toray Silicone SH8400" were mixed to obtain a curable composition.
〔실시예 2〕[Example 2]
(A) 양자점 "CZ520"을 240부, 및 도아합성(주)제의 "TO-1382"(디펜타에리스리톨펜타아크릴레이트와 호박산의 모노에스테르화물, 디펜타에리스리톨헥사아크릴레이트 및 디펜타에리스리톨펜타아크릴레이트의 혼합물)을 24부 혼합하고, 비드밀에 의해 양자점을 충분히 분산시켜 양자점 분산액을 조제했다. 계속해서, (B)중합성 화합물 "KAYARAD DPHA"를 40부, (C) 중합 개시제 "이르가큐어 907"을 8부, (D) 티올 화합물 "PEMP"를 3부, (E) 수지로서 수지 E1을 60부(고형분 환산), (F) 용제로서 프로필렌글리콜모노메틸에테르아세테이트를 654부, 및 (G) 레벨링제 "도레이실리콘 SH8400"을 0.1부 혼합하여 경화성 조성물을 얻었다.(A) 240 parts of a quantum dot "CZ520", and "TO-1382" (a mixture of dipentaerythritol pentaacrylate and a monoester of succinic acid, dipentaerythritol hexaacrylate and dipentaerythritol pentaacrylate 24 parts) were mixed and the quantum dots were sufficiently dispersed by a bead mill to prepare a quantum dot dispersion. Subsequently, 40 parts of (B) a polymerizable compound "KAYARAD DPHA", 8 parts of a polymerization initiator "Irgacure 907" as a polymerization initiator (C), 3 parts of a thiol compound "PEMP" 654 parts of E1 as a solvent (in terms of solid content), (F) 654 parts of propylene glycol monomethyl ether acetate as a solvent, and (G) 0.1 part of a leveling agent "Toray Silicone SH8400" were mixed to obtain a curable composition.
〔실시예 3〕[Example 3]
(A) 양자점 "CZ620"을 240부, 빅케미·재팬(주)제의 "DISPERBYK-180"을 24부 혼합하고, 비드밀에 의해 양자점을 충분히 분산시켜 양자점 분산액을 조제했다. 계속해서, (B) 중합성 화합물 "KAYARAD DPHA"를 40부, (C) 중합 개시제 "이르가큐어 907"을 8부, (D) 티올 화합물 "PEMP"를 3부, (E) 수지로서 수지 E1을 60부(고형분 환산), (F) 용제로서 프로필렌글리콜모노메틸에테르아세테이트를 654부, (G) 레벨링제 "도레이실리콘 SH8400"을 0.1부 혼합하여 경화성 조성물을 얻었다.(A) 240 parts of a quantum dot "CZ620" and 24 parts of "DISPERBYK-180" manufactured by Big Chem Japan Co., Ltd. were mixed and the quantum dots were fully dispersed by a bead mill to prepare a quantum dot dispersion. Subsequently, 40 parts of (B) a polymerizable compound "KAYARAD DPHA", 8 parts of a polymerization initiator "Irgacure 907" as a polymerization initiator (C), 3 parts of a thiol compound "PEMP" 654 parts of E1 as a solid (in terms of solid content), (F) 654 parts of propylene glycol monomethyl ether acetate as a solvent, and (G) 0.1 part of a leveling agent "Toray Silicone SH8400" were mixed to obtain a curable composition.
〔실시예 4〕[Example 4]
(A) 양자점 "CZ620"을 240부, 및 도아합성(주)제의 "TO-1382"을 24부 혼합하고, 비드밀에 의해 양자점을 충분히 분산시켜 양자점 분산액을 조제했다. 계속해서, (B) 중합성 화합물 "KAYARAD DPHA"를 40부, (C) 중합 개시제 "이르가큐어 907"을 8부, (D) 티올 화합물 "PEMP"를 3부, (E) 수지로서 수지 E1을 60부(고형분 환산), (F) 용제로서 프로필렌글리콜모노메틸에테르아세테이트를 654부, 및 (G) 레벨링제 "도레이실리콘 SH8400"을 0.1부 혼합하여 경화성 조성물을 얻었다.240 parts of (A) quantum dot " CZ620 "and 24 parts of" TO-1382 " manufactured by Toa Sekkeishi Kogyo Co., Ltd., and quantum dots were sufficiently dispersed by a bead mill to prepare a quantum dot dispersion. Subsequently, 40 parts of (B) a polymerizable compound "KAYARAD DPHA", 8 parts of a polymerization initiator "Irgacure 907" as a polymerization initiator (C), 3 parts of a thiol compound "PEMP" 654 parts of E1 as a solvent (in terms of solid content), (F) 654 parts of propylene glycol monomethyl ether acetate as a solvent, and (G) 0.1 part of a leveling agent "Toray Silicone SH8400" were mixed to obtain a curable composition.
〔실시예 5〕[Example 5]
(A) 양자점 "CZ620"을 271.7부, 및 도아합성(주)제의 "TO-1382"를 24부 혼합하고, 비드밀에 의해 양자점을 충분히 분산시켜 양자점 분산액을 조제했다. 계속해서, (B) 중합성 화합물 "KAYARAD DPHA"를 40부, (C) 중합 개시제 "이르가큐어 OXE01"을 10부, (D) 티올 화합물 "PEMP"를 0.1부, (E) 수지로서 수지 E1을 60부(고형분 환산), (F) 용제로서 프로필렌글리콜모노메틸에테르아세테이트를 393.6부, 및 (G) 레벨링제 "도레이실리콘 SH8400"을 0.1부 혼합하여 경화성 조성물을 얻었다.271.7 parts of (A) quantum dot "CZ620" and 24 parts of "TO-1382 " manufactured by Toa Synthetic Co., Ltd. were mixed and the quantum dots were fully dispersed by a bead mill to prepare a quantum dot dispersion. Then, 40 parts of the polymerizable compound (B) "KAYARAD DPHA", 10 parts of the polymerization initiator "Irgacure OXE01" as the polymerization initiator (C), 0.1 part of the thiol compound "PEMP" , 60 parts of E1 (in terms of solid content), 393.6 parts of propylene glycol monomethyl ether acetate as the (F) solvent, and 0.1 part of (G) leveling agent "Toray Silicone SH8400"
〔실시예 6〕[Example 6]
(D) 티올 화합물 "PEMP"의 배합량을 0.5부로, (F) 용제의 배합량을 394.8부로 각각 변경한 것 이외는 실시예 5와 동일하게 하여 경화성 조성물을 얻었다.And the amount of the (D) thiol compound "PEMP" was changed to 0.5 parts and the amount of the (F) solvent to 394.8 parts, respectively.
〔실시예 7〕[Example 7]
(A) 양자점 "CZ620"의 배합량을 272.7부로, (D) 티올 화합물 "PEMP"의 배합량을 1.0부로, (F) 용제의 배합량을 396.3부로 각각 변경한 것 이외는 실시예 5와 동일하게 하여 경화성 조성물을 얻었다.Except that the amount of the quantum dot "CZ620" was changed to 272.7 parts (A), the amount of the thiol compound "PEMP" was changed to 1.0 parts, and the amount of the solvent (F) was changed to 396.3 parts, A composition was obtained.
〔실시예 8〕[Example 8]
(A) 양자점 "CZ620"의 배합량을 276.8부로, (D) 티올 화합물 "PEMP"의 배합량을 3.0부로, (F) 용제의 배합량을 402.2부로 각각 변경한 것 이외는 실시예 5와 동일하게 하여 경화성 조성물을 얻었다.Except that the amount of the quantum dot "CZ620" in (A) was changed to 276.8 parts, the amount of the thiol compound "PEMP" was changed to 3.0 parts, and the amount of the (F) solvent was changed to 402.2 parts, A composition was obtained.
〔실시예 9〕[Example 9]
(A) 양자점 "CZ620"의 배합량을 291.2부로, (D) 티올 화합물 "PEMP"의 배합량을 10.0부로, (F) 용제의 배합량을 423.1부로 각각 변경한 것 이외는 실시예 5와 동일하게 하여 경화성 조성물을 얻었다.Was prepared in the same manner as in Example 5, except that the amount of the quantum dot "CZ620" was changed to 291.2 parts (A), the amount of the thiol compound "PEMP" was changed to 10.0 parts, and the amount of the solvent (F) was changed to 423.1 parts, A composition was obtained.
〔실시예 10〕[Example 10]
(A) 양자점 "CZ620"의 배합량을 311.7부로, (D) 티올 화합물 "PEMP"의 배합량을 20.0부로, (F) 용제의 배합량을 452.9부로 각각 변경한 것 이외는 실시예 5와 동일하게 하여 경화성 조성물을 얻었다.Except that the amount of the quantum dot "CZ620" was changed to 311.7 parts (A), the amount of the thiol compound "PEMP" was changed to 20.0 parts, and the amount of the (F) solvent was changed to 452.9 parts, respectively. A composition was obtained.
〔비교예〕[Comparative Example]
(A) 양자점 "CZ520"을 220부, 및 빅케미·재팬(주)제의 "DISPERBYK-180"을 22부 혼합하고, 비드밀에 의해 양자점을 충분히 분산시켜 양자점 분산액을 조제했다. 계속해서, (B) 중합성 화합물 "KAYARAD DPHA"를 100부, (F) 용제로서 프로필렌글리콜모노메틸에테르아세테이트를 677부, (G) 레벨링제 "도레이실리콘 SH8400"을 0.1부 혼합하여 경화성 조성물을 얻었다.220 parts of (A) quantum dot " CZ520 "and 22 parts of" DISPERBYK-180 "manufactured by Big Chem Japan Co., Ltd. were sufficiently mixed to disperse quantum dots by a bead mill. Subsequently, 100 parts of (B) the polymerizable compound "KAYARAD DPHA", (F) 677 parts of propylene glycol monomethyl ether acetate as a solvent, and (G) 0.1 part of a leveling agent "TORAYI SAN SH8400" .
<경화막의 제조>≪ Preparation of cured film &
가로세로 5cm의 유리 기판(이글 2000; 코닝사제) 상에, 경화성 조성물을 스핀 코트법으로 도포한 후, 100℃에서 1분간 프리베이크하여 조성물층을 얻었다. 방냉(放冷) 후, 노광기(TME-150RSK; 탑콘(주)제)를 이용하여, 대기 분위기하, 150mJ/cm2의 노광량(365㎚ 기준)으로 조성물층 전체 면에 광조사했다. 광조사 후, 수계 현상액(비이온계 계면활성제 0.12% 및 수산화 칼륨 0.04%를 포함하는 수용액)에 23℃에서 60초간 침지시켜, 수세(水洗) 후, 오븐 중, 200℃에서 10분간 포스트 베이크를 행함으로써, 경화막을 얻었다.The curable composition was applied on a glass substrate (Eagle 2000; Corning) having a size of 5 cm on both sides by spin coating, and then pre-baked at 100 ° C for 1 minute to obtain a composition layer. After cooling, the entire surface of the composition layer was irradiated with light at an exposure dose of 150 mJ / cm 2 (365 nm standard) using an exposure machine (TME-150RSK, manufactured by Topcon Co., Ltd.) in an air atmosphere. After light irradiation, the substrate was immersed in an aqueous developing solution (an aqueous solution containing 0.12% of a nonionic surfactant and 0.04% of potassium hydroxide) at 23 DEG C for 60 seconds, washed with water and then postbaked in an oven at 200 DEG C for 10 minutes To obtain a cured film.
<막 두께 측정>≪ Measurement of film thickness &
얻어진 경화막의 막 두께를, 막 두께 측정 장치(DEKTAK3; 일본진공기술(주)제))에 의해 측정했다.The film thickness of the obtained cured film was measured by a film thickness measuring device (DEKTAK3; manufactured by Japan Vacuum Technology Co., Ltd.)).
<양자 수율비의 측정><Measurement of quantum yield ratio>
경화성 조성물의 조제에 이용한 양자점 분산액에 대해, 파장 450㎚에서의 흡광도가 0.4가 되도록 톨루엔을 첨가해, 희석 분산액을 제조했다. 당해 희석 분산액과 상기에서 얻어진 경화막에 대해, 형광 양자 수율 측정 장치(C9920-02G; 하마마쯔포토닉스(주)제)에 의해, 여기 파장 450㎚에서의 양자 수율을 각각 측정했다. 측정된 양자 수율로부터 하기 식 (y)에 의해 양자 수율비를 계산했다. 식 (y) 중, Qf는 경화막의 양자 수율을 나타내고, Qs는 양자점 희석 분산액의 양자 수율을 나타낸다.To the quantum dot dispersion used in the preparation of the curable composition, toluene was added so that the absorbance at a wavelength of 450 nm became 0.4 to prepare a diluted dispersion. The quantum yield of each of the diluted dispersion and the cured film obtained above was measured by a fluorescence quantum yield measuring apparatus (C9920-02G; manufactured by Hamamatsu Photonics K.K.) at an excitation wavelength of 450 nm. The quantum yield ratio was calculated from the measured quantum yield by the following equation (y). In the formula (y), Qf represents the quantum yield of the cured film, and Qs represents the quantum yield of the quantum dot diluted dispersion.
양자 수율비=Qf/Qs×100 (y)Quantum yield ratio = Qf / Qs x 100 (y)
<발광색의 관찰>≪ Observation of luminescent color &
얻어진 경화막에 대해, 암실하에서 파장 350㎚의 UV 램프를 조사하여, 육안으로 경화막의 발광색을 관찰했다.The resulting cured film was irradiated with a UV lamp having a wavelength of 350 nm under a dark room to observe the luminescent color of the cured film visually.
<잔막율 평가>≪ Evaluation of residual film ratio &
가로세로 5cm의 유리 기판(이글 2000; 코닝사제) 상에, 경화성 조성물을 스핀코트법으로 도포한 후, 100℃에서 1분간 프리베이크하여 조성물층을 얻었다. 방냉 후, 조성물층이 형성된 기판과 석영 유리제 포토마스크와의 간격을 100㎛로 하고, 노광기(TME-150RSK; 탑콘(주)제)에 의해, 대기 분위기하, 포토 마스크를 개재하여, 80mJ/cm2의 노광량(365㎚ 기준)으로 조성물층에 광조사했다. 포토마스크로서는, 100㎛ 라인 앤드 스페이스 패턴이 형성된 것을 사용했다. 광조사 후의 조성물층의 막 두께를, 막 두께 측정 장치(DEKTAK3; 일본진공기술(주)제)에 의해 측정했다.The curable composition was applied on a glass substrate (Eagle 2000; Corning) having a size of 5 cm on both sides by spin coating, and then pre-baked at 100 ° C for 1 minute to obtain a composition layer. After cooling down, the space between the substrate on which the composition layer was formed and the quartz glass photomask was set to 100 mu m and the surface of the quartz glass photomask was irradiated with light of 80 mJ / cm < 2 > 2 < / RTI > (365 nm standard). As the photomask, a 100 μm line and space pattern was formed. The film thickness of the composition layer after light irradiation was measured by a film thickness measuring device (DEKTAK3; manufactured by Japan Vacuum Technology Co., Ltd.).
이어서, 광조사 후의 조성물층이 형성된 기판을, 수계 현상액(비이온계 계면활성제 0.12% 및 수산화 칼륨 0.04%를 포함하는 수용액)에 23℃에서 60초간 침지시켜 현상하여, 수세함으로써 경화 패턴을 얻었다. 얻어진 경화 패턴의 막 두께를, 막 두께 측정 장치(DEKTAK3; 일본진공기술(주)제))에 의해 측정했다.Subsequently, the substrate on which the composition layer after irradiation with light was formed was immersed in an aqueous developing solution (aqueous solution containing 0.12% of a nonionic surfactant and 0.04% of potassium hydroxide) at 23 캜 for 60 seconds to develop and wash it with water to obtain a cured pattern. The film thickness of the obtained cured pattern was measured by a film thickness measuring device (DEKTAK3; manufactured by Japan Vacuum Technology Co., Ltd.).
경화 패턴의 잔막율을 식 (z)에 의해 구했다. 잔막율이 90% 이상이면, 경화성 조성물의 감도는 양호하다고 판단할 수 있다. 식 (z) 중, Td는 경화 패턴의 막 두께를 나타내고, Te는 광조사 후의 조성물층의 막 두께를 나타낸다.The residual film ratios of the cured patterns were determined by the equation (z). When the residual film ratio is 90% or more, it can be judged that the sensitivity of the curable composition is good. In the formula (z), Td represents the film thickness of the cured pattern, and Te represents the film thickness of the composition layer after light irradiation.
잔막율(%)=Td/Te×100 (z)Residual film ratio (%) = Td / Te x 100 (z)
또한, 비교예의 경화성 조성물에서는, 광조사 후의 조성물층이 현상액에 모두 용해되어, 기판 상에 경화 패턴이 얻어지지 않았기 때문에, 양자 수율비 및 발광색의 관찰은 할 수 없었다.Further, in the curable composition of the comparative example, since the composition layer after light irradiation was completely dissolved in the developer, no cured pattern was obtained on the substrate, and thus the quantum yield ratio and the emission color could not be observed.
본 발명의 경화성 조성물에 의하면, 현상 시에 높은 잔막율로 경화 패턴을 얻을 수 있고, 또한 당해 경화 패턴은, 발광시켰을 때의 양자 수율이 우수하다.According to the curable composition of the present invention, a cured pattern can be obtained at a high residual film ratio at the time of development, and the cured pattern has excellent quantum yield when light is emitted.
Claims (6)
티올 화합물이, 분자 내에 2 이상의 술파닐기를 가지는 티올 화합물인 경화성 조성물.The method according to claim 1,
Wherein the thiol compound is a thiol compound having two or more sulfanyl groups in the molecule.
양자점이, 12족 원소와 16족 원소의 화합물, 13족 원소와 15족 원소의 화합물 및 14족 원소와 16족 원소의 화합물로 이루어지는 군으로부터 선택되는 적어도 일종을 포함하는 경화성 조성물.3. The method according to claim 1 or 2,
Wherein the quantum dot comprises at least one selected from the group consisting of a compound of a group 12 element and a group 16 element, a compound of a group 13 element and a group 15 element, and a group 14 element and a group 16 element.
수지를 더 포함하는 경화성 조성물.4. The method according to any one of claims 1 to 3,
Further comprising a resin.
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