KR20170047673A - A solar cell comprising a compound having alkylenediammonium as an absorber - Google Patents
A solar cell comprising a compound having alkylenediammonium as an absorber Download PDFInfo
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- KR20170047673A KR20170047673A KR1020150148057A KR20150148057A KR20170047673A KR 20170047673 A KR20170047673 A KR 20170047673A KR 1020150148057 A KR1020150148057 A KR 1020150148057A KR 20150148057 A KR20150148057 A KR 20150148057A KR 20170047673 A KR20170047673 A KR 20170047673A
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- solar cell
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- absorber
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 29
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 125000002947 alkylene group Chemical group 0.000 claims description 8
- 230000005525 hole transport Effects 0.000 claims description 8
- 230000031700 light absorption Effects 0.000 claims description 6
- 150000001768 cations Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002892 organic cations Chemical class 0.000 abstract description 2
- 239000000975 dye Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 10
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- 239000011368 organic material Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- SFPQDYSOPQHZAQ-UHFFFAOYSA-N 2-methoxypropanenitrile Chemical compound COC(C)C#N SFPQDYSOPQHZAQ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- UUIMDJFBHNDZOW-UHFFFAOYSA-N 2-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=CC=N1 UUIMDJFBHNDZOW-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
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- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
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- H01L51/4253—
-
- H01L51/424—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The present invention relates to a solar cell comprising a compound having an alkylenediammonium as an absorber, and the compound according to the present invention is characterized by high stability against light, moisture and heat by having alkylenediammonium as an organic cation .
Description
The present invention relates to a solar cell comprising a compound having an alkylenediammonium as an absorber.
Researches on renewable and clean alternative energy sources such as solar energy, wind power, and hydro power are actively being conducted to solve the global environmental problems caused by the depletion of fossil energy and its use.
Of these, there is a great interest in solar cells that change electrical energy directly from sunlight. The term "solar cell" as used herein refers to a cell that generates a current-voltage by utilizing a photovoltaic effect that absorbs light energy from sunlight to generate electrons and holes.
Currently, np diode-type silicon (Si) single crystal based solar cells with a light energy conversion efficiency of more than 20% can be manufactured and used for actual solar power generation. Compound semiconductors such as gallium arsenide (GaAs) There is also solar cell using. However, since such an inorganic semiconductor-based solar cell requires a highly refined material for high efficiency, a large amount of energy is consumed for refining the raw material, and expensive process equipment is required in the process of making single crystal or thin film using raw material And the manufacturing cost of the solar cell can not be reduced.
Accordingly, in order to manufacture a solar cell at a low cost, it is necessary to drastically reduce the cost of the core material or the manufacturing process of the solar cell. As an alternative to the inorganic semiconductor-based solar cell, a dye- Solar cells are being actively studied.
Dye-sensitized solar cell (DSSC) was first developed by Professor Michael Gratzel of the Lausanne University of Technology in Switzerland (1991) and introduced to Nature magazine (Vol. 353, p. 737) .
In the early dye-sensitized solar cell structure, a dye that absorbs light is adsorbed on a porous photo-electrode on a transparent electrode film through which light and electricity pass, and then another conductive glass substrate is placed on top and a simple structure . The working principle of a dye-sensitized solar cell is as follows. When dye molecules chemically adsorbed on the surface of a porous photocathode absorb solar light, dye molecules generate electron-hole pairs, and electrons are converted into conduction tines of semiconductor oxide used as a porous photocathode Injected and transferred to the transparent conductive film to generate a current. The holes remaining in the dye molecules are transferred to the photocathode by the hole conduction or hole conductive polymer by the oxidation-reduction reaction of the liquid or solid electrolyte, and form a complete solar cell circuit, .
In this dye-sensitized solar cell structure, the transparent conductive film is mainly composed of fluorine doped tin oxide (FTO) or indium doped tin oxide (ITO), and a nanotube having a wide band gap is used as the porous photo cathode. The dyestuff is particularly well absorbed and has a lowest unoccupied molecular orbital (LUMO) energy level of the dye than the energy level of the condiction band of the photocathode material, which facilitates the separation of the exciton produced by the light, Various materials are chemically synthesized and used. The highest efficiency of liquid dye-sensitized solar cells reported so far is 11-12% for about 20 years. Although the efficiency of the liquid dye-sensitized solar cell is relatively high, it is likely to be commercialized. However, there is a problem in terms of stability with time due to volatile liquid electrolyte and low cost due to use of expensive ruthenium (Ru) dye.
In order to solve this problem, a nonvolatile electrolyte using an ionic solvent, a polymer gel electrolyte, and a pure organic dyestuff have been studied in place of a volatile liquid electrolyte, but a dye sensitized with a volatile liquid electrolyte and a ruthenium dye There is a problem that the efficiency is lower than that of the solar cell.
Organic photovoltaics (OPVs), which have been studied extensively since mid-1990, have been used to study organic materials with electron donor (D or often called hole acceptor) characteristics and electron acceptor (A) . When a solar cell made of organic molecules absorbs light, electrons and holes are formed. This is called an exiton. The exciton migrates to the D-A interface and the charge is separated, the electrons are transferred to the electron acceptor, the holes are transferred to the electron donor, and the photocurrent is generated.
Since the distance that the exciton generated from the electron donor can travel normally is very short, about 10 nm, the photoconductivity can not be accumulated thickly, and the efficiency of the photoconductivity is low due to low light absorption. In recent years, however, efficiency has greatly increased with the introduction of the so-called bulk heterojunction (BHJ) concept of increasing the surface area at the interface and the development of donor organic materials having a small band gap that is easy to absorb a wide range of solar light, Organic solar cells with efficiency over 8% have been reported (Advanced Materials, 23 (2011) 4636).
Organic solar cells are easier to fabricate than existing solar cells because of their easy processability and diversity of organic materials and low unit cost. Therefore, it is possible to realize low cost manufacturing cost compared to existing solar cells. However, in the organic solar cell, the structure of the BHJ is deteriorated by moisture or oxygen in the air and the efficiency thereof is rapidly lowered, that is, there is a serious problem in the stability of the solar cell. As a method to solve this problem, it is possible to increase the stability by introducing the full sealing technology, but there is a problem that the price is increased.
As a method for solving the problems of the dye-sensitized solar cell by the liquid electrolyte, Prof. Mikael Gratzel of the Department of Chemistry, Lausanne University of Technology, Switzerland, inventor of the dye-sensitized solar cell, proposed a solid-type hole conductive organic material Spiro-OMeTAD (N, N-di-p-methoxyphenylamine) -9,9'-spirobifluorine) was used as a dye-sensitized solar cell with an efficiency of 0.74%. The efficiency was increased up to about 6% by optimization of the structure, interfacial characteristics, and hole conductivity improvement. In addition, solar cells using ruthenium-based dyes, such as P3HT and PEDOT, have been fabricated with low-cost pure organic dyes and hole conductors, but the efficiency is still low at 2-7%.
Further, research has been reported on using a quantum dot nanoparticle as a light absorber in place of a dye and using a hole-conducting inorganic or organic material in place of a liquid electrolyte. A number of solar cells using CdSe and PbS as quantum dots and conductive polymers such as Spiro-OMeTAD or P3HT as hole-conducting organic materials have been reported, but their efficiency is still very low at less than 5%. In addition, efficiency of about 6% was reported for solar cells using Sb 2 S 3 as a light absorbing inorganic material and PCPDTBT as a hole conductive inorganic material (Nano Letters, 11 (2011) 4789).
In addition, a 9% efficiency has been reported using a material having a hybrid organic perovskite structure instead of a pure inorganic quantum dot in place of a dye in a dye-sensitized solar cell (
Accordingly, the present inventors have conducted research to change the structure of the organic hybrid perovskite in order to increase the efficiency of the solar cell, and compounds having alkylenediammonium as an organic cation can be usefully used as an absorber of a solar cell To complete the present invention.
The present invention is to provide a solar cell comprising a compound having alkylenediammonium as an absorber. The present invention also provides a process for producing the above compound.
In order to solve the above problems, the present invention provides a solar cell comprising a compound represented by the following formula (1) as an absorber:
[Chemical Formula 1]
AMX 4
In Formula 1,
A is H 3 N + - (C 1-10 alkylene) -N + H 3 ,
M is a divalent metal cation,
X is the same or different halogen.
The term 'absorber' used in the present invention means a substance which absorbs light in a solar cell to form an exciton, that is, an electron and a hole. In particular, the compound represented by Formula 1 is a perovskite compound, which is characterized in that an organic material and an inorganic material are included together.
CH 3 NH 3 + (methylammonium) is typically known as a cation corresponding to A in the perovskite used in conventional solar cells. However, perovskite containing methylammonium is unstable to light, moisture, and heat, and therefore, when the solar cell is operated, the light conversion efficiency deteriorates over time. Therefore, the present invention is characterized in that bivalent alkylene diammonium is introduced instead of methylammonium.
The cations corresponding to A in the above formula (1) include ammonium at both ends of the alkylene. Preferably, A is H 3 N + - (C 1-4 alkylene) -N + H 3 , more preferably H 3 N + - (C 1-4 straight chain alkylene) -N + H 3 , Most preferably A is H 3 N + - (CH 2 ) 3 -N + H 3 .
Also preferably, M is Pd 2 +, Cu 2 +,
Also preferably, X is, each independently Cl-a -, Br -, or I. Since X may be the same or different from each other, X in the above formula (1) or (2) may contain two or three kinds of halogens.
A representative example of the compound represented by the formula (1) is H 3 N (CH 2 ) 3 NH 3 PdBr 4 .
The present invention also relates to a process for the preparation of a compound of the formula H 2 N- (C 1-10 alkylene) -NH 2 and And a step of reacting the compound of MX 2 in an HX solvent. The molar ratio between the compounds is preferably from 1: 5 to 5: 1. The reaction is preferably carried out at room temperature.
Meanwhile, the solar cell according to the present invention may include the constitution of a solar cell used in the art, except that the compound represented by Chemical Formula 1 is used as an absorber.
For example, the compound represented by the formula (1) according to the present invention absorbs sunlight to form an exciton, and thus can form a light absorbing layer in a solar cell. Therefore, the solar cell used in the present invention can be constituted as follows.
A first electrode comprising a conductive transparent substrate;
An electron transport layer formed on the first electrode;
A light absorbing layer formed on the electron transporting layer and containing the compound represented by Formula 1 as an absorber;
A hole transport layer formed on the light absorption layer; And
And a second electrode formed on the hole transport layer.
The solar cell may be manufactured as follows.
1) forming an electron transport layer on a first electrode comprising a conductive transparent substrate;
2) adsorbing and heat-treating the compound represented by Formula 1 on the electron transport layer to form a light absorption layer;
3) forming a hole transport layer on the light absorption layer; And
4) forming a second electrode on the hole transport layer.
The conductive transparent substrate is not particularly limited as long as it is a conductive transparent substrate ordinarily used in the field of solar cells. For example, fluorine-containing tin oxide (FTO), indium doped tin oxide (ITO), ZnO, PEDOT: PSS and the like can be used.
The electron transport layer may use a porous metal oxide, and preferably has a porous structure by metal oxide particles. Examples of the metal oxide include TiO 2 , SnO 2 , ZnO, Nb 2 O 5 , Ta 2 O 5 , WO 3 , W 2 O 5 , In 2 O 3 , Ga 2 O 3 , Nd 2 O 3 , CdO can be used.
The hole transport layer may use a solid type hole transport material or a liquid electrolyte. Examples of the solid-type hole-transporting material include spiro-OMeTAD (2,2 ', 7,7'-tetrakis- (N, N-di-p- methoxyphenylamine) 9,9'- ), P3HT (poly (3-hexylthiophene)), PCPDTBT (poly [2,1,3-benzothiadiazole-4,7- (Poly (N-vinylcarbazole)), HTM-TFSI (1-hexyl-3-methyl POT (Poly (3, < / RTI > 3, < RTI ID = 4-ethylenedioxythiophene) poly (styrenesulfonate)). As the liquid electrolyte, iodine and an additive dissolved in a solvent may be used. For example, at least one additive selected from the group consisting of urea, thiourea, tert-butylpyridine, and guanidium thiotanate is added to at least one additive selected from the group consisting of ethyl acetate, acetonitrile, Methoxypropionitrile, methoxypropionitrile and the like can be used.
Is in the second electrode, ITO, FTO, ZnO-Ga 2 O 3, a glass substrate or a plastic substrate including at least one material selected from the group consisting of ZnO-Al 2 O 3 and tin oxide, Pt, A conductive layer containing at least one material selected from the group consisting of Au, Ni, Cu, Ag, In, Ru, Pd, Rh, Ir, Os, C and a conductive polymer may be formed.
In addition, the adsorption of the compound in the
As described above, the compound having alkylenediammonium according to the present invention can be usefully used as an absorber of a solar cell.
1 shows XRD data of a light absorber fabricated in an embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in order to facilitate understanding of the present invention. However, the following examples are provided only for the purpose of easier understanding of the present invention, and the present invention is not limited thereto.
Example
Step 1) H 3 N (CH 2 ) 3 NH 3 PdBr 4 of Produce
Propylenediamine and PdBr 2 were added to HBr at a molar ratio of 1: 1 to prepare a 20 wt% HBr solution. The solution was stirred at 110 ° C for 1 hour and then slowly dried to remove the solvent and recovered as a powder to prepare H 3 N (CH 2 ) 3 NH 3 PdBr 4 .
Step 2) Manufacture of solar cell
The end portion of the FTO substrate having a size of 25 mm × 25 mm was etched to partially remove the FTO. A solution of 0.1 M [(CH 3 ) 2 CHO] 2 Ti (C 5 H 7 O 2 ) 2 -butanol was coated on the FTO substrate to a thickness of 40 nm at 700 rpm for 10 seconds and at 2000 rpm for 60 seconds, And sintered at 500 ° C for 15 minutes to form an n-type blocking TiO 2 layer.
The compound prepared in Step 1 was dissolved in DMSO to form a solution having a concentration of 30 wt%, which was coated on the TiO2 layer for 5 seconds at 500 rpm, 90 seconds at 1000 rpm, and 30 seconds at 5000 rpm And dried and heat-treated at 150 ° C for 10 minutes to form a light absorbing layer.
A chlorobenzene solution (30 μL) in which 58 mM spiro-OMeTAD (72.3 mg / mL), 188 mM TBP (28.8 μL) and 29.9 mM LiTFSi (30 μL) were spun on the light absorption layer was spun at 6000 rpm for 30 seconds To form a hole transporting layer. Au was vacuum deposited thereon to form an electrode.
FIG. 1 shows XRD data of the optical absorber according to the above manufacturing process.
Experimental Example
The band gap and HOMO-LUMO were measured for the compound prepared in step 1 of the above example. Specifically, the reflectance corresponding to a wavelength of 300 to 2000 nm was measured using a Lambda 950 instrument (Perkin Elmer). The measured values were calculated by Tauc plot using Kubelka-Monk equation. In addition, HOMO was measured using Photoelectron Spectroscopy equipment, and the LUMO value was obtained through the bandgap obtained previously. The results are shown in Table 1 below.
In addition, the solar cell manufactured in
(mA / cm 2 )
Claims (7)
[Chemical Formula 1]
AMX 4
In Formula 1,
A is H 3 N + - (C 1-10 alkylene) -N + H 3 ,
M is a divalent metal cation,
X is the same or different halogen.
Wherein A is H 3 N + - (C 1-4 alkylene) -N + H 3 .
Solar cells.
A is H 3 N + - (CH 2 ) 3 -N + H 3 .
Solar cells.
M is Pd 2 +, Cu 2 +, Pb 2 +, Sn 2 +, Ge 2 +, Sr 2 +, Cd 2 +, Ca 2 +, Ni 2 +, Mn 2 +, Fe 2 +, Co 2 +, Sn 2 + , Yb 2+ , or Eu 2+ .
Solar cells.
Each X is independently, Cl -, Br -, or I - in that, characterized in,
Solar cells.
The compounds are characterized in that the H 3 N (CH 2) 3 NH 3 PdBr 4,
Solar cells.
The solar cell has the following structure: a solar cell:
A first electrode comprising a conductive transparent substrate;
An electron transport layer formed on the first electrode;
A light absorbing layer formed on the electron transporting layer and comprising a compound represented by Formula 1 as a light absorber;
A hole transport layer formed on the light absorption layer; And
And a second electrode formed on the hole transport layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150148057A KR20170047673A (en) | 2015-10-23 | 2015-10-23 | A solar cell comprising a compound having alkylenediammonium as an absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150148057A KR20170047673A (en) | 2015-10-23 | 2015-10-23 | A solar cell comprising a compound having alkylenediammonium as an absorber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170047673A true KR20170047673A (en) | 2017-05-08 |
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ID=60164457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150148057A KR20170047673A (en) | 2015-10-23 | 2015-10-23 | A solar cell comprising a compound having alkylenediammonium as an absorber |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20170047673A (en) |
-
2015
- 2015-10-23 KR KR1020150148057A patent/KR20170047673A/en not_active Application Discontinuation
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