KR20170037928A - Post-processing apparatus of solar cell - Google Patents

Abstract

According to an embodiment of the present invention, the present invention relates to a post-processing device for a solar cell, which performs a post-processing step including a main section for heat treatment while providing light to the solar cell including a semiconductor substrate, and which comprises a main region which performs the main section. A first heat source part for providing heat to the semiconductor substrate, and a light source part for providing light to the semiconductor substrate are located in the main region. The light source part includes a light source composed of a plasma lighting system (PLS).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a POST-PROCESSING APPARATUS OF SOLAR CELL,

The present invention relates to a post-processing apparatus for a solar cell, and more particularly, to a post-processing apparatus for a solar cell based on a crystalline semiconductor substrate.

With the recent depletion of existing energy sources such as oil and coal, interest in alternative energy to replace them is increasing. Among them, solar cells are attracting attention as a next-generation battery that converts solar energy into electric energy.

In such solar cells, various layers and electrodes can be fabricated by design. However, solar cell efficiency can be determined by the design of these various layers and electrodes. In order to commercialize the solar cell, it is necessary to overcome the low efficiency. Various layers and electrodes are designed to maximize the efficiency of the solar cell, and various processes that maximize the efficiency of the solar cell are performed. Accordingly, a post-treatment apparatus for post-treating the solar cell is required to maximize the efficiency of the solar cell.

The present invention relates to a post-processing apparatus for a solar cell capable of improving the output loss of the solar cell.

A post-processing apparatus for a solar cell according to an embodiment of the present invention is a post-processing apparatus for a solar cell that performs a post-processing step including a main section for performing heat treatment while supplying light to a solar cell including a semiconductor substrate, Lt; / RTI > area. A first heat source portion for providing heat to the semiconductor substrate and a light source portion for providing light to the semiconductor substrate are disposed in the main region. The light source unit includes a light source including a plasma lighting system (PLS).

According to the post-treatment apparatus of this embodiment, it is possible to stably and efficiently perform the post-treatment step of post-treating the solar cell by providing heat and light, and maintaining the temperature, luminosity and process time necessary for the post- The effect of the post-treatment step can be maximized.

FIG. 1 is a cross-sectional view illustrating an example of a solar cell manufactured by a method of manufacturing a solar cell according to an embodiment of the present invention.
2 is a front plan view of the solar cell shown in FIG.
3 is a flowchart illustrating a method of manufacturing a solar cell according to an embodiment of the present invention.
4A to 4G are cross-sectional views illustrating the method of manufacturing the solar cell shown in FIG.
5 is a time-temperature graph of the main treatment process in the post-treatment step of the manufacturing method according to an embodiment of the present invention.
6 is a graph showing the state of hydrogen according to temperature and luminous intensity in a post-treatment step of the method for manufacturing a solar cell according to an embodiment of the present invention.
FIG. 7 is a graph showing the state of hydrogen according to luminous intensity and process time in a post-treatment step of the method for manufacturing a solar cell according to an embodiment of the present invention.
8 is a cross-sectional view illustrating another example of a solar cell manufactured by the method of manufacturing a solar cell according to an embodiment of the present invention.
FIG. 9 is a cross-sectional view illustrating another example of a solar cell manufactured by the method of manufacturing a solar cell according to an embodiment of the present invention.
10 is a graph showing temperature-luminous intensity lines showing the same output loss in the experimental example of the present invention.
11 is a graph showing a line of luminous intensity-process time showing the same output loss in the experimental example of the present invention.
12 is a schematic view showing a post-treatment apparatus of a solar cell according to an embodiment of the present invention.
13 is a schematic view showing a post-treatment apparatus for a solar cell according to a modification of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it is needless to say that the present invention is not limited to these embodiments and can be modified into various forms.

In the drawings, the same reference numerals are used for the same or similar parts throughout the specification. In the drawings, the thickness, the width, and the like are enlarged or reduced in order to make the description more clear, and the thickness, width, etc. of the present invention are not limited to those shown in the drawings.

Wherever certain parts of the specification are referred to as "comprising ", the description does not exclude other parts and may include other parts, unless specifically stated otherwise. Also, when a portion of a layer, film, region, plate, or the like is referred to as being "on" another portion, it also includes the case where another portion is located in the middle as well as the other portion. When a portion of a layer, film, region, plate, or the like is referred to as being "directly on" another portion, it means that no other portion is located in the middle.

Hereinafter, a post-treatment apparatus for a solar cell according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. An example of a solar cell manufactured by a manufacturing method of a solar cell including a post-processing step performed by a post-processing apparatus of a solar cell according to an embodiment of the present invention will be described, A description will be given of a post-treatment apparatus for a solar cell.

FIG. 1 is a cross-sectional view illustrating an example of a solar cell manufactured by a method for manufacturing a solar cell according to an embodiment of the present invention, and FIG. 2 is a front plan view of the solar cell shown in FIG. In FIG. 2, the semiconductor substrate and the electrode are shown as being mainly.

1, a solar cell 100 according to the present embodiment includes a semiconductor substrate 110 including a base region 10, a first conductive type region 20 having a first conductivity type, A first electrode 42 connected to the first conductive type region 20 and a second electrode 44 connected to the second conductive type region 30. The second conductive type region 30 has a conductive type, . The solar cell 100 may further include an insulating film such as a first passivation film 22, an anti-reflection film 24, or the like. This will be explained in more detail.

The semiconductor substrate 110 may be formed of a crystalline semiconductor. In one example, the semiconductor substrate 110 may be composed of a single crystal or polycrystalline semiconductor (e.g., single crystal or polycrystalline silicon). In particular, the semiconductor substrate 110 may be composed of a single crystal semiconductor (for example, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer). Thus, when the semiconductor substrate 110 is made of a single crystal semiconductor (for example, a single crystal silicon), the solar cell 100 constitutes a single crystal semiconductor solar cell (for example, a single crystal silicon solar cell). The solar cell 100 based on the semiconductor substrate 110 formed of a crystalline semiconductor having high crystallinity and having few defects can have excellent electrical characteristics.

The front surface and / or the rear surface of the semiconductor substrate 110 may be textured to have irregularities. The irregularities may be, for example, a (111) plane of the semiconductor substrate 110 and may have a pyramid shape having an irregular size. If the surface roughness of the semiconductor substrate 110 is increased due to such irregularities formed on the front surface of the semiconductor substrate 110, the reflectance of light incident through the front surface of the semiconductor substrate 110 can be reduced. Accordingly, the amount of light reaching the pn junction formed by the base region 10 and the first conductivity type region 20 can be increased, so that the optical loss can be minimized. In this embodiment, irregularities are formed on the entire surface of the semiconductor substrate 110 to reduce the reflectance of the incident light, and the irregularities are not formed on the rear surface, thereby enhancing the reflection efficiency. However, the present invention is not limited thereto, and it may be formed on both the front surface and the rear surface of the semiconductor substrate 110, and it is also possible that the irregularities due to texturing are not formed on the front surface and the rear surface of the semiconductor substrate 110.

The semiconductor substrate 110 may include a base region 10 having a second conductivity type including a second conductivity type dopant at a relatively low doping concentration. For example, the base region 10 may be located farther from the front surface of the semiconductor substrate 110 than the first conductivity type region 20, or closer to the rear surface. And the base region 10 may be closer to the front surface of the semiconductor substrate 110 than the second conductive type region 30 and further away from the rear surface. However, the present invention is not limited thereto, and it goes without saying that the position of the base region 10 can be changed.

Here, the base region 10 may be formed of a crystalline semiconductor containing a second conductive dopant. In one example, the base region 10 may be composed of a single crystal or a polycrystalline semiconductor (for example, single crystal or polycrystalline silicon) including a second conductive type dopant. In particular, the base region 10 may be comprised of a single crystal semiconductor (e.g., a single crystal semiconductor wafer, more specifically a single crystal silicon wafer) comprising a second conductive dopant.

The second conductivity type may be n-type or p-type. When the base region 10 has an n type, the base region 10 is formed of a single crystal or polycrystalline semiconductor doped with a Group 5 element (P), arsenic (As), bismuth (Bi), antimony (Sb) Lt; / RTI > When the base region 10 has a p-type, the base region 10 is formed of a single crystal or polycrystalline semiconductor doped with boron (B), aluminum (Al), gallium (Ga) Lt; / RTI > However, the present invention is not limited thereto, and the base region 10 and the second conductive dopant may be composed of various materials.

For example, the base region 10 may be p-type. The second conductive type region 30 may be formed by diffusing the material contained in the second electrode 44 in the step of firing the second electrode 44. Accordingly, a separate doping process for forming the second conductivity type region 30 can be omitted, thereby simplifying the fabrication process. However, the present invention is not limited thereto, and it is also possible that the base region 10 and the second conductivity type region 30 have a p-type and the first conductivity type region 20 has an n-type.

A first conductivity type region 20 having a first conductivity type opposite to the base region 10 may be formed on the front side of the semiconductor substrate 110. [ The first conductive type region 20 forms a pn junction with the base region 10 to form an emitter region for generating carriers by photoelectric conversion.

In this embodiment, the first conductivity type region 20 may be a doped region constituting a part of the semiconductor substrate 110. Accordingly, the first conductive type region 20 may be formed of a crystalline semiconductor including the first conductive type dopant. In one example, the first conductive type region 20 may be composed of a single crystal or a polycrystalline semiconductor (for example, single crystal or polycrystalline silicon) including the first conductive type dopant. In particular, the first conductivity type region 20 may be composed of a single crystal semiconductor (for example, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer) including a first conductive type dopant. When the first conductivity type region 20 is formed as a part of the semiconductor substrate 110, the junction characteristics with the base region 10 can be improved.

However, the present invention is not limited thereto, and the first conductive type region 20 may be formed separately from the semiconductor substrate 110 on the semiconductor substrate 110. This will be described later in more detail with reference to FIG.

The first conductivity type may be p-type or n-type. When the first conductive type region 20 has a p-type, the first conductive type region 20 is doped with boron (B), aluminum (Al), gallium (Ga), indium Single crystal or polycrystalline semiconductor. When the first conductive type region 20 has an n type, the first conductive type region 20 is doped with a Group 5 element such as (P), arsenic (As), bismuth (Bi), antimony (Sb) Single crystal or polycrystalline semiconductor. However, the present invention is not limited thereto, and various materials may be used as the first conductivity type dopant.

In the figure, the first conductivity type region 20 has a homogeneous structure having a uniform doping concentration as a whole. However, the present invention is not limited thereto. Thus, in another embodiment, the first conductive region 20 may have a selective structure. The selective structure will be described later in detail with reference to FIG.

A second conductive type region 30 having a second conductive type identical to the base region 10 and including a second conductive type dopant at a higher doping concentration than the base region 10 is formed on the rear surface of the semiconductor substrate 110, Can be formed. The second conductive type region 30 forms a back surface field to prevent carriers from being lost by recombination on the surface of the semiconductor substrate 110 (more precisely, the back surface of the semiconductor substrate 110) Thereby constituting a rear electric field area.

In this embodiment, the second conductivity type region 30 may be a doped region constituting a part of the semiconductor substrate 110. Accordingly, the second conductive type region 30 may be formed of a crystalline semiconductor including the second conductive type dopant. As an example, the second conductivity type region 30 may be composed of a single crystal or a polycrystalline semiconductor (for example, single crystal or polycrystalline silicon) including a second conductivity type dopant. In particular, the second conductivity type region 30 may be composed of a single crystal semiconductor (for example, a single crystal semiconductor wafer, more specifically, a single crystal silicon wafer) including a second conductivity type dopant. When the second conductivity type region 30 is formed as a part of the semiconductor substrate 110 in this manner, the junction characteristics with the base region 10 can be improved.

However, the present invention is not limited thereto, and the second conductive type region 30 may be formed separately from the semiconductor substrate 110 on the semiconductor substrate 110. This will be described later in more detail with reference to FIG.

The second conductivity type may be n-type or p-type. When the second conductivity type region 30 has an n-type, the second conductivity type region 30 is doped with P, As, bismuth, antimony, or the like, which is a Group 5 element, Single crystal or polycrystalline semiconductor. When the second conductivity type region 30 has a p-type, the second conductivity type region 30 is doped with boron (B), aluminum (Al), gallium (Ga), indium Single crystal or polycrystalline semiconductor. However, the present invention is not limited thereto, and various materials may be used as the second conductivity type dopant. The second conductive dopant of the second conductive type region 30 may be the same as or different from the second conductive type dopant of the base region 10.

In this embodiment, the second conductivity type region 30 has a homogeneous structure having a uniform doping concentration as a whole. However, the present invention is not limited thereto. Thus, in another embodiment, the second conductivity type region 30 may have a selective structure or a local structure. The selective structure and the local structure will be described later in detail with reference to FIG.

In this embodiment, the first and second conductivity type regions 20 and 30 formed in the semiconductor substrate 110 are each doped with the first or second conductivity type dopant and the base region 10 is doped with the second conductivity type dopant So that the dopant is entirely located on the semiconductor substrate 110. At this time, the specific dopant may combine with other materials or elements in the semiconductor substrate 110 to deteriorate the characteristics of the solar cell 100. For example, when the semiconductor substrate 110 includes boron (B) as a dopant, boron and oxygen (O) may react to form a B-O bond. Such a B-O bond can significantly reduce the lifetime of the carrier and deteriorate the characteristics of the solar cell 100. In particular, when boron is used as the second conductive dopant included in the base region 10 and the base region 10 has a p-type, BO bonds can exist in a large area in a large area of the semiconductor substrate 110, The characteristics of the battery 100 may be greatly reduced.

Accordingly, in this embodiment, a post-treatment step (ST50 in FIG. 3, the same applies hereinafter) is performed so as to prevent a coupling (for example, the above-described BO coupling) Thereby preventing degradation of the characteristics of the battery 100. [ This will be described later in more detail in the manufacturing method of the solar cell 100.

At this time, the thickness T1 of the semiconductor substrate 110 may be 200um or less. If the thickness T1 of the semiconductor substrate 110 exceeds 200 mu m, the effect of the post-processing step ST50 may not be sufficiently exhibited in the semiconductor substrate 110 as a whole. In one example, the thickness (T1) of the semiconductor substrate 110 may be 100 [mu] m to 200 [mu] m. If the thickness T1 of the semiconductor substrate 110 is less than 100 탆, the efficiency of the solar cell 100 may be reduced due to insufficient thickness T1 of the semiconductor substrate 110 where photoelectric conversion takes place, May not be sufficient. However, the present invention is not limited thereto, and the thickness T1 of the semiconductor substrate 110 may be variously changed.

The first passivation film 22 and the antireflection film 24 are formed on the front surface of the semiconductor substrate 110 more precisely on the first conductive type region 20 formed on or in the semiconductor substrate 110, The first electrode 42 is formed in contact with the first conductivity type region 20 through the first passivation film 22 and the antireflection film 24 (i.e., through the opening 102).

The first passivation film 22 and the antireflection film 24 may be formed substantially entirely on the entire surface of the semiconductor substrate 110 except for the opening portion 102 corresponding to the first electrode 42. [

The first passivation film 22 is formed in contact with the first conductive type region 20 to passivate defects present in the surface or bulk of the first conductive type region 20. Accordingly, the open-circuit voltage (Voc) of the solar cell 100 can be increased by removing recombination sites of the minority carriers. The antireflection film 24 reduces the reflectance of light incident on the front surface of the semiconductor substrate 110. Accordingly, the amount of light reaching the pn junction formed by the base region 10 and the first conductivity type region 20 can be increased by lowering the reflectance of the light incident through the entire surface of the semiconductor substrate 110. Accordingly, the short circuit current Isc of the solar cell 100 can be increased. As described above, the efficiency of the solar cell 100 can be improved by increasing the open-circuit voltage and the short-circuit current of the solar cell 100 by the first passivation film 22 and the anti-reflection film 24.

The first passivation film 22 may be formed of various materials. In one example, the first passivation film 22 may be comprised of an insulating material including hydrogen. When the first passivation film 22 includes hydrogen, the first passivation film 22 serves to passivate the surface of the semiconductor substrate 110, and also to pass hydrogen to the inside or the bulk of the semiconductor substrate 110 in the post- As the hydrogen supply source.

In one example, the first passivation film 22 may include 10 ²⁰ to 10 ²² pieces / cm ³ of hydrogen. This hydrogen content is limited to the extent that it can effectively serve as a hydrogen supply source in the surface passivation of the semiconductor substrate 110 by the first passivation film 22 and in the post-treatment step ST50. However, the present invention is not limited thereto, and the hydrogen range of the first passivation film 22 may be variously changed.

For example, the first passivation film 22 may include silicon nitride (SiNx: H) containing hydrogen, silicon oxynitride (SiOxNy: H) containing hydrogen, silicon carbide containing hydrogen (SiCx: H) (SiOx: H) and the like. However, the present invention is not limited thereto, and the first passivation film 22 may include various other materials.

The thickness of the first passivation film 22 may have a thickness of 50 nm to 200 nm. If the thickness of the first passivation film 22 is less than 50 nm, the passivation effect may not be sufficient, and the effect of diffusing hydrogen into the interior in the post-treatment step ST50 may be small. If the thickness of the first passivation film 22 exceeds 200 nm, the effect does not increase greatly, and the process time can be increased and the thickness of the solar cell 100 can be increased. However, the present invention is not limited thereto, and the thickness of the first passivation film 22 may be variously changed.

The anti-radiation film 24 may be formed of various materials. For example, the antireflection film 24 may be a single film selected from the group consisting of a silicon nitride film, a silicon nitride film including hydrogen, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, MgF ₂ , ZnS, TiO _2, and CeO ₂ , Layer structure having a combination of at least two layers. In one example, the antireflective film 24 may comprise silicon nitride.

In this embodiment, the first passivation film 22 formed in contact with the semiconductor substrate 110 includes hydrogen to effectively perform a passivation role and a hydrogen supply source. However, the present invention is not limited thereto, and it is also possible that the antireflection film 24 alone or in combination with the first passivation film 22 contains hydrogen. The hydrogen content, the thickness, and the like of the antireflection film 24 may be the same as or similar to the material, the hydrogen content, the thickness, and the like of the first passivation film 22 described above when the antireflection film 24 includes hydrogen.

In this embodiment, the first passivation film 22, which is an insulating film located on the front surface of the semiconductor substrate 110, includes hydrogen and supplies hydrogen in a post-treatment step ST50. This is because the light of a short wavelength is well absorbed at the front surface of the semiconductor substrate 110 and the undesired coupling (for example, the above-mentioned BO coupling) is likely to occur, so that the supply of hydrogen from the front side of the semiconductor substrate 110 Since it is advantageous to prevent unwanted binding from being created. However, the present invention is not limited thereto. It is within the scope of the present invention that the insulating film formed on at least one of the front surface and the rear surface of the semiconductor substrate 110 includes hydrogen and supplies hydrogen in a post-treatment step (ST50).

Also, in the above-described embodiment, it is exemplified that both the first passivation film 22 and the antireflection film 24 are provided. The present invention is not limited to this, and it is also possible that any one of the first passivation film 22 and the antireflection film 24 functions as an antireflection role and passivation, and the other is not provided. Alternatively, various films other than the first passivation film 22 and the antireflection film 24 may be formed on the front surface of the semiconductor substrate 110. Other variations are possible.

The first electrode 42 is electrically connected to the first passivation film 22 through the opening 102 formed in the first passivation film 22 and the antireflection film 24 (that is, through the first passivation film 22 and the antireflection film 24) And is electrically connected to the conductive type region 20. The first electrode 42 may be formed to have various shapes by various materials. The shape of the first electrode 42 will be described later with reference to Fig.

The second electrode 44 is formed on the rear surface of the semiconductor substrate 110, more precisely on the second conductive type region 30 formed on the semiconductor substrate 110. [ The second electrode 44 is formed entirely on the rear surface of the semiconductor substrate 110 to induce the reflection of light from the rear surface of the semiconductor substrate 110. [ Then, light reaching the rear surface of the semiconductor substrate 110 is reflected back to the inside of the semiconductor substrate 110 and reused to improve the use efficiency of light. At this time, the second electrode 44 may be formed in contact with the rear surface of the semiconductor substrate 110 or the second conductive type region 30.

The second conductive type region 30 can be formed by diffusing the material contained in the second electrode 44 into the semiconductor substrate 110 in the step of firing the second electrode 44 in this embodiment. And the second conductivity type region 30 may not be separately performed. Accordingly, it is possible to prevent the semiconductor substrate 110 from being damaged or defective, which may occur in the process of simplifying the manufacturing process and forming the second conductivity type region 30 by doping.

The planar shape of the first electrode 42 will be described in detail with reference to FIG.

Referring to FIG. 2, the first electrode 42 may include a plurality of finger electrodes 42a spaced apart from each other with a predetermined pitch. Although the finger electrodes 42a are parallel to each other and parallel to the edge of the semiconductor substrate 110, the present invention is not limited thereto. The first electrode 42 may include a bus bar electrode 42b formed in a direction crossing the finger electrodes 42a and connecting the finger electrodes 42a. Only one bus bar electrode 42b may be provided or a plurality of bus bar electrodes 42b may be provided with a larger pitch than the pitch of the finger electrodes 42a as shown in FIG. At this time, the width of the bus bar electrode 42b may be larger than the width of the finger electrode 42a, but the present invention is not limited thereto. Therefore, the width of the bus bar electrode 42b may be equal to or smaller than the width of the finger electrode 42a.

The finger electrode 42a and the bus bar electrode 42b of the first electrode 42 may all be formed through the first passivation film 22 and the antireflection film 24 as viewed in cross section. That is, the opening 102 may be formed corresponding to both the finger electrode 42a of the first electrode 42 and the bus bar electrode 42b. As another example, the finger electrode 42a of the first electrode 42 is formed through the first passivation film 22 and the antireflection film 24, and the bus bar electrode 42b is formed through the first passivation film 22 and the anti- Antireflection film 24 may be formed. In this case, the opening 102 is formed in a shape corresponding to the finger electrode 42a, and may not be formed in a portion where only the bus bar electrode 42b is located.

As described above, the solar cell 100 can be processed so as not to cause a coupling or the like which may deteriorate the characteristics of the solar cell 100 by the post-treatment step (ST50). The manufacturing method of the solar cell 100 will be described in more detail.

FIG. 3 is a flow chart illustrating a method of manufacturing a solar cell according to an embodiment of the present invention, and FIGS. 4A to 4G are cross-sectional views illustrating a method of manufacturing the solar cell shown in FIG. Detailed description of the same or similar components to those of the solar cell 100 described with reference to FIGS. 1 and 2 will be omitted, and a description will be given in detail of the unexplained portions.

Referring to FIG. 3, a method of manufacturing a solar cell 100 according to the present embodiment includes a step ST10 of preparing a semiconductor substrate, a step ST20 of forming a conductive type region, a step ST30 of forming an insulating film, A step ST40 of forming electrodes, and a post-processing step ST50. The step ST40 of forming the electrode includes a step ST42 of forming the first and second electrode layers and a step ST44 of firing. The post-treatment step ST50 includes a hydrogen diffusion step ST52, a preliminary heat treatment step (ST54) and a main processing step (ST56). At this time, the firing step (ST44) and the hydrogen diffusion step (ST52) may be performed together in the same step. This will be described in detail with reference to Figs. 4A to 4G.

First, as shown in FIG. 4A, in a step ST10 of preparing a semiconductor substrate, a semiconductor substrate 110 composed of a base region 10 having a second conductivity type dopant is prepared. For example, in this embodiment, the semiconductor substrate 110 may be composed of a silicon substrate (for example, a silicon wafer) having a p-type dopant (particularly boron (B)). However, the present invention is not limited thereto, and the base region 10 may have a p-type dopant or an n-type dopant other than boron.

At this time, at least one of the front surface and the rear surface of the semiconductor substrate 110 may be textured so as to have irregularities. Wet or dry texturing may be used for texturing the surface of the semiconductor substrate 110. The wet texturing can be performed by immersing the semiconductor substrate 110 in the texturing solution, and has a short process time. In dry texturing, the surface of the semiconductor substrate 110 is cut by using a diamond grill or a laser, so that irregularities can be uniformly formed, but the processing time is long and damage to the semiconductor substrate 110 may occur. Alternatively, the semiconductor substrate 110 may be textured by reactive ion etching (RIE) or the like. As described above, the semiconductor substrate 110 can be textured in various ways in the present invention.

For example, the front surface of the semiconductor substrate 110 is textured so as to have irregularities, and the rear surface of the semiconductor substrate 110 is processed by mirror polishing or the like to be a flat surface having a surface roughness smaller than that of the front surface of the semiconductor substrate 110 . However, the present invention is not limited thereto, and a semiconductor substrate 110 having various structures can be used.

Next, as shown in FIG. 4B, a conductive type region is formed in the semiconductor substrate 110 in the step ST20 of forming the conductive type region. More specifically, in this embodiment, the first conductive type region 20 is formed on the entire surface of the semiconductor substrate 110 in the step of forming the conductive type region, and the second conductive type region (see 30, the same applies hereinafter) is formed in the step of baking the second electrode 44 later. However, the present invention is not limited thereto, and at least one of the first conductive type region 20 and the second conductive type region 30 may be formed in the step of forming the conductive type region. In this case, the second conductivity type region 30 can be formed by applying the same or similar method as the method of forming the first conductivity type region 20 to be described later.

The first conductivity type region 20 may be formed by doping a dopant by various methods such as an ion implantation method, a thermal diffusion method, and a laser doping method. Alternatively, the first conductive type region 20 may be formed on the semiconductor substrate 110 by forming a separate layer having the first conductive type dopant.

4C, in step ST30 of forming the insulating film, an insulating film is formed on the front surface of the semiconductor substrate 110 or on the first conductive type region 20. Next, as shown in FIG.

More specifically, a first passivation film 22 and an antireflection film 24 are formed on the first conductive type region 20. In this embodiment, the case where the insulating film is not disposed on the rear surface of the semiconductor substrate 110 is exemplified. However, an insulating film (for example, a second passivation film) may be disposed on the rear surface of the semiconductor substrate 110. In this case, an insulating film may be formed on the rear surface of the semiconductor substrate 110 in this step. In this case, the insulating film on the rear surface of the semiconductor substrate 110 can be formed by the same or similar method as the formation method of the first passivation film 22, the antireflection film 24 and the like to be described later.

The first passivation film 22 and / or the antireflection film 24 may be formed by various methods such as vacuum deposition, chemical vapor deposition, spin coating, screen printing or spray coating.

In this case, in this embodiment, the first passivation film 22 may be composed of an insulating material containing hydrogen. Thus, the first passivation film 22 can pass through the surface of the semiconductor substrate 110 by hydrogen and serve as a hydrogen supply source for supplying hydrogen in a post-processing step ST50.

Then, as shown in Figs. 4D and 4E, first and second electrodes 42 and 44 are formed in an electrode formation step ST40. This will be explained in more detail.

First, as shown in FIG. 4D, in the step of forming the first and second electrode layers (ST42), the first and second electrode forming paste is applied to the first passivation film 22, the antireflection film 24, The first and second electrode layers 420 and 440 are formed on the semiconductor substrate 110 or on the semiconductor substrate 110 by printing (e.g., screen printing). In addition, various methods, processes, and the like can be applied to the method and process of forming the first and second electrode layers 420 and 440.

4E, the first and second electrode layers 420 and 440 are fired to form the first and second electrodes 42 and 44, respectively, in the firing step ST44.

During the firing process, the first electrode layer 420 is exposed to the first passivation film 22, which is an insulating film, through an opening portion 102 (see FIG. 2) through the anti-reflection film 24 by a fire through or a laser firing contact, (For example, contact) with the first conductivity type region 20. In this case, When the firing-through or the laser firing contact is applied as described above, the opening 102 is formed in the step of firing, so that it is unnecessary to add a step of forming the opening 102 separately.

The second conductive type region 30 may be formed on the semiconductor substrate 110 by diffusing a material (for example, aluminum) constituting the second electrode 44 to the backside of the semiconductor substrate 110. However, the present invention is not limited thereto. Therefore, as described above, the second conductive type region 30 may be formed in the step ST20 of forming the conductive type region.

For example, the temperature (particularly, the peak temperature) in the step of firing ST44 may be 700 to 800 占 폚, and the processing time may be 5 to 20 seconds. The present invention is not limited to the range in which the firing time can be minimized while sufficiently firing is performed. The step of firing ST44 may be performed by providing heat using an ultraviolet lamp, but the present invention is not limited thereto and various other methods can be applied.

As described above, in this embodiment, the step ST40 of forming the electrode includes a step ST44 of firing, and this firing step ST44 serves as a part of the post-processing step ST50 to be performed later You may. That is, some of the steps of the firing step (ST44) and the post-processing step (ST50) may be performed together in the same single step. This will be described in more detail later in the post-processing step (ST50).

The present invention is not limited thereto, and it is also possible that the step of forming the electrode (ST40) does not include the step of firing (ST44). For example, an opening 102 is formed in the first passivation film 22 and the antireflection film 24, and a conductive material is formed in the opening 102 by various methods such as a plating method and a deposition method, And the second electrode 44 can be formed by various methods such as a plating method, a vapor deposition method, and a printing method. The first and second electrodes 42 and 44 can be formed by various other methods.

Then, the post-processing step ST50 of post-processing the solar cell 100 including the semiconductor substrate 110 to passivate the semiconductor substrate 110 is performed. More specifically, the post-treatment step ST50 prevents degradation of the characteristics of the solar cell 100, which may occur due to a specific bonding occurring in the bulk or inside of the semiconductor substrate 110. [ For example, when light is supplied to the semiconductor substrate 110 when the semiconductor substrate 110 includes boron, BO bonding is likely to occur inside the semiconductor substrate 110, and the BO bonding can significantly reduce the lifetime of the carrier The characteristics of the solar cell 100 can be lowered. Accordingly, in the post-processing step ST50 of the present embodiment, a specific coupling (for example, a BO coupling) that is located inside the semiconductor substrate 110 and degrades the characteristics of the solar cell 100 is generated Thereby improving the characteristics of the solar cell 100.

At this time, if the heat treatment is performed at a high temperature again on the semiconductor substrate 110 or the like after the post-treatment step ST50, the effect of the post-treatment step ST50 may be reduced or eliminated. Therefore, the post-treatment step ST50 can be performed after the step ST44, which is performed in the latter half of the manufacturing method of the solar cell 100, with or without the firing step ST44 performed at a relatively high temperature. As an example, some of the steps of the post-treatment step ST50 may be performed together with the step of firing ST44, and the remaining steps may be performed after the step of firing ST44. Alternatively, the entire process of the post-treatment step (ST50) may be performed after the step (ST44). This makes it possible to prevent the effect of the post-processing step (ST50) from deteriorating or disappearing. This will be described in more detail later.

The post-treatment step (ST50) is a step (ST50) of inhibiting the generation of a bond that lowers the characteristics of the solar cell 100 by the heat treatment that provides the light to the semiconductor substrate together, (For example, a BH bond). The post-treatment step ST50 may include a hydrogen diffusion step ST52 and / or a preliminary heat treatment step ST54 performed before the main processing step ST56 so as to improve the effect of the main processing step ST56. have. In this embodiment, the hydrogen diffusion process ST52, the preliminary heat treatment process ST54, and the main process ST56 are sequentially performed in order to maximize the effect of the post-process ST50, Explain.

First, in the hydrogen diffusion step (ST52), hydrogen is diffused into the semiconductor substrate (110). The hydrogen diffusion process ST52 may be performed by heat treatment at a high temperature capable of diffusing hydrogen into the semiconductor substrate 110 more deeply.

At this time, hydrogen may be supplied from various sources and supplied to the inside of the semiconductor substrate 110. For example, by placing the semiconductor substrate 110 in a furnace or the like in a hydrogen atmosphere, hydrogen in a hydrogen atmosphere can be supplied to the inside of the semiconductor substrate 110. In this case, the hydrogen gas in the hydrogen atmosphere becomes the supply source of hydrogen. Alternatively, when the insulating film (that is, the first passivation film 22, the antireflection film 24, or the like) formed on the semiconductor substrate 110 includes hydrogen, the hydrogen of the insulating film is heated to the inside of the semiconductor substrate 110 Can supply. In this case, hydrogen in the insulating film becomes a supply source of hydrogen.

In this embodiment, the insulating film, particularly, the first passivation film 22 contacting the semiconductor substrate 110 includes hydrogen, and the hydrogen is supplied to the inside of the semiconductor substrate 110. If the first passivation film 22 is used as a hydrogen supply source, a process, an apparatus, and the like for forming a hydrogen atmosphere and the like are not required, and the first passivation film 22 functions as a kind of capping film, .

This hydrogen diffusion step ST52 is performed at a temperature of 400 DEG C to 800 DEG C (more specifically, 400 DEG C to 700 DEG C) (more accurately, a peak temperature) for 5 seconds to 20 minutes (1 minute to 20 minutes) . If the temperature of the hydrogen diffusion process ST52 is less than 400 DEG C or the process time is less than 5 seconds, hydrogen diffusion may not be sufficiently performed. If the temperature of the hydrogen diffusion process exceeds 800 DEG C or the process time exceeds 20 minutes, the process cost and time may increase and the productivity may be lowered. That is, hydrogen can be effectively diffused into the semiconductor substrate 110 within the above-described temperature and time range, and can have high productivity. Considering the process cost, productivity, and the like, the temperature of the hydrogen diffusion process (ST52) may be 400 ° C to 700 ° C, and the process time may be 1 minute to 20 minutes when hydrogen diffusion is further considered. However, the present invention is not limited thereto, and the temperature and the process time of the hydrogen diffusion process ST52 may have various values.

At this time, various heat sources can be used as a heat source for allowing the hydrogen diffusion process ST52 to maintain a constant temperature. For example, an ultraviolet lamp, a resistance heating heater, or the like can be used as a heat source. However, the present invention is not limited thereto, and various other heat sources may be used.

The temperature, the process time, and the like of the hydrogen diffusion process ST52 may have the same or similar or overlapping with the temperature and the process time of the firing step ST44 of the step (ST40) of forming the electrode. And the heat sources used in the hydrogen diffusion step ST52 and the firing step ST44 may be the same or similar to each other. And thus the hydrogen diffusion step ST52 can be performed together in step ST44. That is, as shown in FIG. 4E, the hydrogen diffusion can be performed together in the step ST44 where the hydrogen diffusion step (ST52) is not performed separately. Then, the separate hydrogen diffusion process (ST52) need not be performed separately, thereby simplifying the process and reducing the cost. However, the present invention is not limited thereto, and it is also possible that the hydrogen diffusion process ST52 is performed in a separate step after the step ST44.

Then, as shown in FIG. 4F, in the preliminary heat treatment step (ST54), the semiconductor substrate 110 The hydrogen diffused into the semiconductor substrate 110 by heat treatment reacts with other materials or elements in the semiconductor substrate 110 to generate a hydrogen-containing bond. In particular, hydrogen can couple with the dopant of the semiconductor substrate 110. For example, when the semiconductor substrate 110 comprises boron as a dopant, a hydrogen bond and a boron bond B-H bond are generated.

At this time, in the preliminary heat treatment step (ST54), only heat treatment is performed, but light is not separately provided, thereby preventing generation of BO bonds and generating a large amount of BH bonds. Thus, pre-heat treatment step (ST54) in I of a low light intensity than the main treatment step (ST56) even if such natural light provided is not provided with a separate light, can be provided with a light intensity of approximately 100 mW / cm ² or less . However, the present invention is not limited thereto, and the brightness of the preliminary heat treatment step (ST54) may be varied.

The temperature of the preliminary heat treatment step (ST54) may be 100 deg. C to 300 deg. C lower than the temperature of the hydrogen diffusion step (ST52). As described above, the preliminary heat treatment step (ST54) is for forming a BH bond. When the temperature of the preliminary heat treatment step (ST54) is lower than 100 DEG C, energy corresponding to the BH bond energy is not provided, . When the temperature in the preheating step (ST54) exceeds 300 ° C, the hydrogen bonds are generated rather than the BH bonds, so that the H ₂ bonds can be generated and the BH bonds can be decomposed. Therefore, when the temperature of the preliminary heat treatment step (ST54) is 100 占 폚 to 300 占 폚, many BH bonds can be produced by the preliminary heat treatment step (ST54).

The process time of the preliminary heat treatment step (ST54) may be from 1 minute to 30 minutes. If the process time of the preliminary heat treatment step (ST54) is less than 1 minute, it may be difficult to sufficiently generate the desired B-H bond. If the process time of the preliminary heat treatment step (ST54) is more than 30 minutes, the effect of the preliminary heat treatment is not greatly increased, but the process time is prolonged and the productivity may be lowered. However, the present invention is not limited thereto and the process time of the preliminary heat treatment step (ST54) may be changed.

When the B-H bond is formed by the preliminary heat treatment step ST54, hydrogen is present in the vicinity of the surface of the semiconductor substrate 110 or inside the boron (B) as a dopant. Particularly, there are many B-H bonds in the vicinity of the surface of the semiconductor substrate 110. It is possible to reduce the distance, time, and the like at which hydrogen diffuses into the semiconductor substrate 110 in the main process ST56 to be performed later.

Next, as shown in FIG. 4G, a main processing step (ST56) for providing light while performing heat treatment at a temperature higher than room temperature is performed. Main processing step (ST56) in if provided with the light even in a short time by the carrier (carrier injection from light) injected by light H ⁰ or H instead of H ⁺ state in which hydrogen is stabilized ^may be the status of the . Since hydrogen in the state of H ⁰ or H ^- is not stabilized, it is converted into hydrogen of H ⁺ state again after a certain period of time.

Hydrogen in the state of H ⁰ or H ^- generated by light can be rapidly diffused into the semiconductor substrate 110 because the diffusion rate is much higher than that of hydrogen in the H ⁺ state. Accordingly, hydrogen diffuses to the inside of the semiconductor substrate 110 to remove defects in the semiconductor substrate 110 or to prevent undesired bonding. For example, when hydrogen in a state of H ⁰ or H ^- is diffused into the semiconductor substrate 110 and then converted into a stabilized H ⁺ state, formation of BH bonds and formation of BO bonds can be prevented. That is, by irradiating the light, the BO bond which can be generated at the beginning of the main treatment step (ST56) is decomposed to generate BH bond, and thereafter, the BH bond reaction as a whole is dominant so that the BO bond is not generated. As described above, since the BH bonds, which are located on the surface of the semiconductor substrate 110, are located to the inside of the semiconductor substrate 110, unwanted BO bonds in the semiconductor substrate 110 can be prevented from being generated.

In the present embodiment, it is recognized that in order to convert hydrogen in the form of H ⁺ into hydrogen in the state of H ⁰ or H ^-, the temperature, luminous intensity and time must be provided with a constant correlation, So as to maximize the effect of the main processing step (ST56). That is, even if the light is supplied even at a constant temperature, if the luminous intensity and / or the processing time do not reach a certain level, the hydrogen exists in the form of stabilized H ⁺ , and only when the luminous intensity and / Can be converted to a state of H ⁰ or H ^- .

At this time, the main process ST56 may be performed to have a time-temperature graph as shown in FIG. 5 is a time-temperature graph of the main treatment process in the post-treatment step of the manufacturing method according to an embodiment of the present invention.

5, the main processing step ST56 includes a main section ST562 having a temperature for converting hydrogen (more specifically, a peak temperature), and before the main section ST562 (ST561) for raising the temperature from room temperature to the temperature of the main section (ST562), and a cooling section (ST563) for performing the temperature after the main section (ST562) and lowering the temperature to room temperature. Thus, when the main process ST56 is performed, it is possible to prevent a problem caused by a rapid change in the temperature change, and a desired reaction can be stably performed in the main process ST56. In the present specification, the temperature of the main processing step (ST56) means the temperature of the main section (ST562) where hydrogen conversion is actually performed. The light intensity of the main process ST56 may mean the light intensity of the main section ST562 and the process time of the main process ST56 may be the process time of the main section ST562, It can mean.

The temperature of the main treatment process (ST56) should be such that it can convert hydrogen in the H ⁺ state to H ⁰ or H ^- state and decompose BO bonds that can be generated as light is provided. For example, the temperature of the main treatment step (ST56) may be 100 deg. C to 800 deg. If the temperature of the main treatment step (ST56) is less than 100 占 폚, the BO energy generated by the provision of light may remain because the thermal energy is smaller than the energy capable of decomposing the BO. If the process temperature of the main treatment process exceeds 800 ° C, the process temperature and the like may increase due to the high temperature. However, the present invention is not limited thereto.

First, the correlation between the temperature and the light intensity in the main processing step (ST56) for converting the hydrogen in the form of H ^{+ to} hydrogen in the state of H ⁰ or H ^- is examined. Then, the correlation between the luminous intensity and the time is examined.

6 is a graph showing the state of hydrogen according to temperature and luminous intensity in a post-treatment step of the method for manufacturing a solar cell according to an embodiment of the present invention.

It is recognized that the minimum value I _min of the light intensity required for the conversion of hydrogen (the intensity at which H ⁺ type hydrogen is converted to H ⁰ ) varies depending on the temperature T in the main processing step ST56, As a result, the results shown in FIG. 6 were obtained. Taking this into account, the minimum value I _{min of} light intensity becomes larger as the temperature T of the main process ST56 increases. As a result, it was recognized that the minimum value (I _min ) of the luminous intensity at each temperature (T) is equal to the following equation (1).

≪ Formula 1 >

I _min = 1750 - 31.8 T + (0.16) T ²

(Where the unit of T is ° C and the unit of I _min is mW / cm ² ).

Thus, only when the temperature T of the main processing step ST56 has a constant value, the luminous intensity I of the light provided with the heat treatment has a value equal to or greater than the minimum value I _min of the luminous intensity described above, Hydrogen can be converted to H ⁰ or H ^- state hydrogen. For reference, the minimum value (Imin) of luminous intensity at a temperature (T) of 100 ° C to 800 ° C may have a value of 1.7 × 10 ² mW / cm ² to 7.871 × 10 ⁴ mW / cm ² .

Accordingly, the luminous intensity (I) of the light to be provided together with the temperature T in the main processing step ST56 can satisfy the condition of the following expression (2).

&Quot; (2) "

1750 - 31.8 · T + (0.16) · T ² ≤ I

(Where the unit of T is ° C and the unit of I is mW / cm ² ).

Accordingly, when the luminous intensity (I) satisfying the above-mentioned formula (2) is provided together with the specific temperature (T) in the predetermined main processing step (ST56), hydrogen in the H ⁺ form can be converted into the form of H ⁰ or H ^- . At this time, if the light intensity I is excessively large, it may be difficult to realize the desired light intensity I, so that the light intensity I in the temperature range T55 of the main process ST56 is 10 ⁵ mW / cm ² Can have the following values. Accordingly, the luminous intensity (I) of the light to be provided together with the temperature T in the main processing step ST56 can satisfy the condition of the following expression (3).

&Quot; (3) "

1750 - 31.8 · T + (0.16) · T ² ≤ I ≤ 10 ⁵

(Where the unit of T is ° C and the unit of I is mW / cm ² ).

The range of the temperature (T) and the range of the temperature (T) and the luminous intensity (I) satisfying the expression (3) corresponds roughly to the area indicated by A in FIG.

And state (minimum step time the hydrogen of the H ⁺ form needed to be converted to the H ⁰⁾ a minimum value (P _min) of the process time required for conversion of hydrogen for each light intensity (I) in the treatment step (ST56) is varied As a result, the results as shown in Fig. 7 were obtained. FIG. 7 is a graph showing the state of hydrogen according to luminous intensity and process time in a post-treatment step of the method for manufacturing a solar cell according to an embodiment of the present invention.

The minimum value (P _min) of the process time becomes smaller as the light intensity (I) increases as shown in Fig. That is, when the luminous intensity I is large, a relatively short process time is required. When the luminous intensity I is small, a relatively long process time is required. As a result of the analysis, it was recognized that the minimum value (P _min ) of the process time according to the luminous intensity (I) is approximately equal to the following equations (4) to (7) At this time, as shown in Equation 7, the minimum process time becomes very small at a light intensity of 5 X 10 ₄ mW / cm ² or more, which makes it difficult to calculate arithmetically and it is difficult to carry out the process at such a process time. The minimum value (P _min ) is shown to have a constant value.

≪ Equation 4 &

1.7 x 10 ² ≤ I <10 ³ , P _min = 13000 - (31.7) 揃 I + (0.02) 揃 (I) ²

&Lt; Eq. 5 &

10 ³ ? I <10 ⁴ , P _min = 1030 - (0.25) I + (1.5 X 10 ^-5 )? (I) ²

&Quot; (6) &quot;

10 ⁴ ≤ I ≤ 5 X 10 ⁴ , P _min = 35.5 - (0.0012) 揃 I + (10 ^-8 ) 揃 (I) ²

&Quot; (7) &quot;

5 X 10 ⁴ ? I? 10 ⁵ , P _min = 0.5

(Where the unit of I is mW / cm ² and the unit of P _min is sec)

Accordingly, if the same as the primary treatment process intensity (I) is the processing time (P) and the minimum value (P _min) of the process described above the time when it has a constant value of (ST56) or with than a value, hydrogen is H ⁰ Or can be effectively converted to hydrogen in the H ^- state. Therefore, the process time P in accordance with the luminous intensity T of the main process ST56 can satisfy any one of the following expressions (8) to (11).

&Quot; (8) &quot;

1.7 X 10 ² ? I <10 ³ , 13000 - (31.7) I + (0.02) - (I) ² ? P

&Lt; Equation (9)

10 ³ ? I <10 ⁴ , 1030 - (0.25) I + (1.5 X 10 ^-5 )? (I) ² ? P

&Lt; Eq. 10 &

10 ⁴ ? I? 10 ⁵ , 35.5 - (0.0012) I + (10 ^-8 )? (I) ² ? P

&Quot; (11) &quot;

5 X 10 ⁴ ? I? 10 ⁵ , 0.5? P

(Where the unit of I is mW / cm ² and the unit of P is sec).

Accordingly, when the process is performed for the process time P satisfying the above-described equations (8) to (11) in the luminous intensity (I) of the predetermined main process step (ST56), the hydrogen of the H ⁺ form is converted into the form of H ⁰ or H ^- can do. At this time, if the process time (P) is excessively large, the productivity may be deteriorated. Therefore, the process time (P) of the main process ST56 may have a value of 10,000 seconds or less. Accordingly, the process time (P) in accordance with the luminous intensity (I) of the main process step (ST56) can satisfy any one of the following expressions (12) to (15).

&Quot; (12) &quot;

1.7 x 10 ² ? I <10 ³ , 13000 - (31.7) I + (0.02)? (I) ² ? P? 10000

&Quot; (13) &quot;

10 ³ ? I <10 ⁴ , 1030 - (0.25) I + (1.5 X 10 ^-5 )? (I) ² ? P? 10000

&Quot; (14) &quot;

10 ⁴ ? I? 10 ⁵ , 35.5 - (0.0012) I + (10 ^-8 )? (I) ² ? P? 10000

&Lt; Eq. 15 &

5 X 10 ⁴ ? I? 10 ⁵ , 0.5? P? 10000

The range of the luminous intensity (I) and the process time (P) satisfying the above-mentioned expressions 12 to 15 corresponds roughly to the area indicated by B in Fig.

As described above, in this embodiment, the range of the temperature T and the luminous intensity I of the main process ST56 is limited so that the hydrogen can be converted, and the range of the process time P is limited, Allow the conversion to take place effectively. Thus, deterioration in characteristics that may occur in the semiconductor substrate 110 when light is irradiated can be effectively prevented.

As described above, the present embodiment includes a post-processing step ST50 including a main processing ST56 performed at a temperature T and a light intensity I of a certain range, (E.g., a BH bond) that can degrade the properties of the substrate 100, and instead produces a hydrogen-containing bond (e.g., a BH bond). Accordingly, deterioration of the characteristics of the solar cell 100 due to undesirable bonding or the like can be prevented. At this time, the process time (P) of the main process step (ST56) is also limited within a certain range, so that the generation of unwanted bonds can be prevented more effectively.

Further, the hydrogen diffusion step (ST52) and / or the preliminary heat treatment step (ST54) for forming a hydrogen-containing bond (for example, a BH bond) for diffusing hydrogen before the main processing step (ST56) The effect of the post-processing step (ST50) can be further improved.

In the above description, the base region 10 of the semiconductor substrate 110 includes boron. However, the present invention can also be applied to the case where the first conductivity type region 20 includes boron (B). In addition, even when the semiconductor substrate 110 does not contain boron, a hydrogen-containing defect (for example, BH bond) is generated in the semiconductor substrate 110 so as not to deteriorate the characteristics of the solar cell 100, The characteristics of the semiconductor device 100 can be improved.

In addition, the manufacturing method of the solar cell 100 according to the embodiment of the present invention can be applied to manufacturing the solar cell 100 having various structures including the semiconductor substrate 110 having the crystalline structure, 100) will be described in detail with reference to Figs. 8 and 9. Fig. The same or similar parts to those of the above-described embodiment can be applied to the following embodiments. Accordingly, the same or similar parts to those of the above-described embodiment will not be described in detail.

8 is a cross-sectional view illustrating another example of a solar cell manufactured by the method of manufacturing a solar cell according to an embodiment of the present invention.

8, the solar cell according to the present embodiment includes a second passivation film 32 formed on the rear surface of the semiconductor substrate 110, a second electrode 44 penetrating the second passivation film 32, (I.e., through the opening 104) to the second conductivity type region 30.

The second passivation film 32 may be formed substantially on the entire rear surface of the semiconductor substrate 110 except for the opening 104 corresponding to the second electrode 44. [ The second passivation film 32 is formed in contact with the second conductive type region 30 to passivate defects present in the surface or bulk of the second conductive type region 30. Accordingly, the open-circuit voltage (Voc) of the solar cell 100 can be increased by removing recombination sites of the minority carriers.

The second passivation film 32 may be formed of various materials. As an example, the second passivation film 32 may be comprised of an insulating material containing hydrogen. When the second passivation film 32 includes hydrogen, the second passivation film 32 functions to passivate the surface of the semiconductor substrate 110, and at the same time, And can serve as a hydrogen source for supplying hydrogen into the inside or the bulk.

As an example, the second passivation film 32 may contain 10 ²⁰ to 10 ²² ions / cm ³ of hydrogen. This hydrogen content is limited to a range that can effectively function as a hydrogen supply source in the surface passivation of the semiconductor substrate 110 by the second passivation film 32 and in the post-treatment step ST50. However, the present invention is not limited thereto, and the hydrogen range of the second passivation film 32 may be variously changed.

For example, the second passivation film 32 may include silicon nitride (SiNx: H) containing hydrogen, silicon oxynitride (SiOxNy: H) containing hydrogen, silicon carbide including hydrogen (SiCx: H) (SiOx: H) and the like. However, the present invention is not limited thereto, and the second passivation film 32 may include various other materials.

As described above, in this embodiment, the first passivation film 22 formed on the front surface of the semiconductor substrate 110 and the second passivation film 32 formed on the rear surface can both function as a source of hydrogen in the post-processing step ST50 The effect of the processing step ST50 can be doubled.

However, the present invention is not limited thereto, and it goes without saying that the second passivation film 32 may include various materials. Alternatively, it is also possible that only the second passivation film 32 contains hydrogen and the first passivation film 22 does not contain hydrogen. Alternatively, various films other than the second passivation film 32 may be formed on the rear surface of the semiconductor substrate 110. Other variations are possible.

The second electrode 44 is electrically connected to the second conductivity type region 30 through the opening 104 formed in the passivation film 32. The second electrode 44 may be formed to have various shapes by various materials.

For example, the second electrode 44 may have the same or similar planar shape as the first electrode 42 described with reference to FIGS. Since the bi-facial structure in which light is incident also on the rear surface of the semiconductor substrate 110, the amount of light used for photoelectric conversion can be increased to improve the efficiency of the solar cell 100. The width and pitch of the finger electrode 42a and the bus bar electrode 42b of the first electrode 42 may be the same as the width and pitch of the finger electrode and bus bar electrode of the second electrode 44 They may be different.

As another example, the second electrode 44 may be formed entirely on the second passivation film 32 and may be formed on the rear surface of the semiconductor substrate 110 or the second conductive type region 30 through the opening 104, -contact). In this case, irregularities due to texturing are not formed on the rear surface of the semiconductor substrate 110, so that reflection of light can be effectively performed by the second electrode 44 formed as a whole. Various other variations are possible.

In this embodiment, the first conductive type region 20 has a selective structure and the second conductive type region 30 has a selective structure.

That is, the first conductivity type region 20 includes a first portion 20a formed adjacent (for example, in contact with) the first electrode 42 and a second portion 20b formed in a region where the first electrode 42 is not located And a second portion 20b formed thereon. The first portion 20a has a relatively large impurity concentration and a large junction depth to have a relatively small resistance and the second portion 20b has a lower impurity concentration and a smaller junction depth than the first portion 20a, Has a resistance greater than that of the portion 20a.

As described above, in this embodiment, the first portion 20a having a relatively small resistance can be formed at a portion adjacent to the first electrode 42, so that the contact resistance with the first electrode 42 can be reduced. At the same time, a second portion 20b having a relatively large resistance is formed at a portion corresponding to the light receiving region between the first electrodes 42 on which light is incident, thereby implementing a shallow emitter. Thus, the current density of the solar cell 100 can be improved. That is, in the present embodiment, the first conductivity type region 20 has an optional structure, and the efficiency of the solar cell 100 can be maximized.

That is, the second conductivity type region 30 includes a first portion 30a formed adjacent (for example, in contact with) the second electrode 44 and a second portion 30b formed in a region where the second electrode 44 is not located And a second portion 30b formed thereon. The first portion 30a has a relatively large impurity concentration and a large junction depth to have a relatively small resistance and the second portion 30b has a lower impurity concentration and a smaller junction depth than the first portion 30a, Has a greater resistance than the portion 30a.

As described above, in this embodiment, the first portion 30a having a relatively small resistance is formed at a portion adjacent to the second electrode 44, so that the contact resistance with the second electrode 44 can be reduced. In addition, it is possible to prevent recombination of holes and electrons by forming a second portion 30b having a relatively large resistance in a portion corresponding to a region between the second electrodes 44 on which light is incident. Thus, the current density of the solar cell 100 can be improved. Thus, the current density of the solar cell 100 can be improved. That is, in this embodiment, the second conductivity type region 30 has an optional structure, so that the efficiency of the solar cell 100 can be maximized.

However, the present invention is not limited thereto, and at least one of the first and second conductivity type regions 20 and 30 may have a uniform structure as shown in FIG. Alternatively, the second conductivity type region 30 may have a local structure having only the first portion 30a without the second portion 30b.

FIG. 9 is a cross-sectional view illustrating another example of a solar cell manufactured by the method of manufacturing a solar cell according to an embodiment of the present invention.

Referring to FIG. 9, in the solar cell according to the present embodiment, the conductive regions 20 and 30 are formed separately from the semiconductor substrate 110 on the semiconductor substrate 110 and have a different crystal structure than the semiconductor substrate 110 Lt; / RTI &gt; Accordingly, the base region 10 may be formed without the conductive regions 20 and 30 of the semiconductor substrate 110.

More specifically, a first tunneling layer 52 may be formed on the front surface of the semiconductor substrate 110, and a first conductive type region 20 may be located on the first tunneling layer 52.

The passivation characteristics of the front surface of the semiconductor substrate 110 can be improved by the first tunneling layer 52 and the generated carriers can be smoothly transferred by the tunneling effect. The first tunneling layer 52 may include various materials through which the carrier can be tunneled. For example, the first tunneling layer 52 may include nitride, semiconductor, conductive polymer, and the like. For example, the first tunneling layer 52 may comprise silicon oxide, silicon nitride, silicon oxynitride, an intrinsic amorphous semiconductor (e. G., Intrinsic amorphous silicon), an intrinsic polycrystalline semiconductor (e. have. . At this time, if the first tunneling layer 52 includes an intrinsic amorphous semiconductor, the first tunneling layer 52 can be formed by a simple manufacturing process because it has characteristics similar to the semiconductor substrate 110 and can improve the surface characteristics of the semiconductor substrate 110 more effectively . As a result, surface recombination that may occur on the surface of the semiconductor substrate 110 can be prevented, and passivation characteristics can be improved.

 At this time, the first tunneling layer 52 may be formed on the entire surface of the semiconductor substrate 110. As a result, the entire surface of the semiconductor substrate 110 can be passivated as a whole, and can be easily formed without additional patterning.

The thickness of the first tunneling layer 52 may be less than 5 nm and may be between 0.5 nm and 5 nm (for example, 1 nm to 4 nm) in order to sufficiently realize the tunneling effect. If the thickness of the first tunneling layer 52 exceeds 5 nm, the tunneling may not occur smoothly, and the solar cell 100 may not operate. If the thickness of the first tunneling layer 52 is less than 0.5 nm, 1 tunneling layer 52, as shown in FIG. In order to further improve the tunneling effect, the thickness of the first tunneling layer 52 may be 1 nm to 4 nm. However, the present invention is not limited thereto, and the thickness of the first tunneling layer 52 may be varied.

A first conductive type region 20 having a first conductivity type opposite to the semiconductor substrate 110 or the base region 10 may be formed on the first tunneling layer 52. The first conductive type region 20 forms a pn junction (for example, a pn tunnel junction) with the semiconductor substrate 110 or the base region 10 to form an emitter region for generating carriers by photoelectric conversion.

The first conductive type region 20 formed separately from the semiconductor substrate 110 on the first tunneling layer 52 may have a crystal structure different from that of the semiconductor substrate 110. In other words, the first conductive type region 20 may be formed of an amorphous semiconductor, a microcrystalline semiconductor, or a polycrystalline semiconductor (for example, amorphous silicon, microcrystalline silicon, or the like) that can be easily formed on the first tunneling layer 52 by various methods, Silicon, polycrystalline silicon), and the like. Accordingly, the first conductive type region 20 may be formed of an amorphous semiconductor, a microcrystalline semiconductor, or a polycrystalline semiconductor (for example, amorphous silicon, microcrystalline silicon, polycrystalline silicon) including the first conductive type dopant. The first conductivity type dopant may be included when forming the semiconductor layer for forming the first conductivity type region 20, or may be doped with various doping methods such as a thermal diffusion method, an ion implantation method, and a laser doping method after forming the semiconductor layer And can be included in the semiconductor layer.

Similarly, a second tunneling layer 54 may be formed on the back surface of the semiconductor substrate 110, and a second conductive type region 30 may be located on the second tunneling layer 54. The material, thickness, and the like of the second tunneling layer 54 are similar to those of the first tunneling layer 52, and detailed description thereof will be omitted. The second conductive type region 30 is the same as or similar to the first conductive type region 20 except that the second conductive type region 30 has a dopant of the first conductive type. Therefore, detailed description thereof will be omitted.

The first transparent conductive layer 421 may be positioned between the first electrode 42 and the first conductive type region 20 and the second conductive type region 30 may be located between the second electrode 44 and the second conductive type region 30, The second transparent conductive layer 441 may be formed.

When the tunneling layers 52 and 54 are formed on the entire surface of the semiconductor substrate 110 and the conductive regions 20 and 30 are formed on the tunneling layers 52 and 54 as described above, The characteristics can be greatly improved. Further, the thickness of the semiconductor substrate 110, which is expensive, can be reduced to reduce the cost, and the solar cell 100 can be manufactured at a low process temperature. However, the crystallinity of the conductive regions 20 and 30 is relatively low, and the mobility of carriers can be relatively small. The first and second transparent conductive layers 421 and 422 are formed between the first electrode 42 and the first conductive type region 20 and between the second electrode 44 and the second conductive type region 30, , 441 are formed to reduce the resistance when the carrier moves in the horizontal direction.

Here, the first transparent electrode layer 421 may be formed over the first conductive type region 20 as a whole. The formation of the whole may include not only covering the entire first conductive region 20 without voids or voids, but also inevitably a case where some portions are not formed. When the first transparent electrode layer 421 is entirely formed on the first conductive type region 20 as described above, the carrier can easily reach the first electrode 42 through the first transparent electrode layer 421, Can be reduced.

The first transparent electrode layer 421 may be formed of a material capable of transmitting light because it is formed entirely on the first conductive type region 20. That is, the first transparent electrode layer 421 is made of a transparent conductive material so that the carrier can be easily moved while allowing transmission of light. Accordingly, even if the first transparent electrode layer 421 is entirely formed on the first conductivity type region 20, transmission of light is not blocked. For example, the first transparent electrode layer 421 may include indium tin oxide (ITO), carbon nano tube (CNT), or the like. However, the present invention is not limited thereto and may include the first transparent electrode layer 421 and various other materials.

The material and shape of the second transparent electrode layer 441 may be similar to those of the first transparent electrode layer 421, and thus the detailed description thereof will be omitted.

An antireflection film 24 having an opening 102 through which the first electrode 42 is connected to the first transparent electrode layer 421 may be disposed on the first transparent electrode layer 421. At this time, the anti-reflection film 24 may include an insulating material having a refractive index smaller than that of the first transparent electrode layer 421. When the antireflection film 24 having a smaller refractive index is formed on the first transparent electrode layer 421, the first transparent electrode layer 421 and the antireflection film 24 serve as a double antireflection film. When the antireflective film 24 includes an insulating material, the antireflective film 24 may be used as a mask layer when the first electrode 42 having a pattern is formed and the first transparent electrode layer 421 may be protected It can also act as a protective layer.

In this embodiment, the antireflection film 24 includes hydrogen and can serve as a hydrogen source in the post-treatment step ST50. The antireflection film 24 may be the same as or similar to the material of the first passivation film 22 or the antireflection film 24 described with reference to FIG. 1, and the hydrogen content of the antireflection film 22 may be May be the same as or similar to the hydrogen content of the first passivation film 22 described with reference to FIG.

In the above description and drawings, the antireflection film 24 disposed on the front surface of the semiconductor substrate 110 includes hydrogen, but the present invention is not limited thereto. Therefore, an insulating film (for example, the second passivation film 32 or another antireflection film shown in FIG. 1) may be further disposed on the rear surface of the semiconductor substrate 110, The insulating film located may contain hydrogen.

At this time, the semiconductor substrate 110 made of the base region 10 may have a p-type including boron. Then, the characteristics of the solar cell 100 can be greatly improved by the effect of the post-processing step (ST50). However, the present invention is not limited thereto. Therefore, the semiconductor substrate 110 may have another dopant, or may have an n-type. In this case, the semiconductor substrate 110 may have an effect of the post-processing step ST50.

Hereinafter, the present invention will be described in more detail with reference to experimental examples. The following experimental examples are presented to explain the present invention in more detail, but the present invention is not limited thereto.

Experimental Example

A solar cell having a structure as shown in Fig. 1 was manufactured using a semiconductor substrate including a p-type base region containing boron. At this time, the passivation film contained about 10 ²⁰ pieces / cm ^{3 of} hydrogen, and in the step of baking the electrode layer, the peak temperature was 700 ° C and the processing time was 10 seconds. The hydrogen diffusion process was performed together by firing the electrode layers.

Subsequently, a preliminary heat treatment process was carried out by holding at a temperature of about 200 DEG C for 5 minutes. Then, the main process is performed on the plurality of solar cells at a temperature of 200 ° C. to 700 ° C. and a light intensity of 10 ⁴ mW / cm ² to 8 × 10 ⁴ mW / cm ² at different temperatures, luminosities and times, The power loss of the solar cell was measured. The temperature-luminosity representing the same output loss is mapped based on the measured output loss values of a plurality of solar cells, and is shown in FIG. 10, and the luminosity-time with the same output loss is mapped and shown in FIG.

In FIG. 10, dotted lines L1, L2, L3, L4, and L5 connecting the points indicating the same output loss are displayed, and the output loss decreases toward L5, L4, L3, L2, and L1. In FIG. 10, the minimum value (I _min ) of the luminous intensity calculated according to the formula 1 at the temperatures of 300 ° C., 400 ° C., 500 ° C., 600 ° C. and 700 ° C. is indicated by a square point, Respectively. 11, dotted lines L11, L12, and L13 connecting points indicating the same output loss are displayed, and the output loss decreases toward L13, L12, and L11.

Referring to FIG. 10, it can be seen that the output power of the solar cell can be reduced by providing light at a predetermined temperature or higher than the predetermined light intensity, and the light intensity must be increased as the temperature increases to reduce the output loss of the solar cell. It can be seen that a quadrangle point at each temperature can have a low output loss in the case of having a luminous intensity greater than the luminous intensity, and accordingly, when the main process is performed at a temperature and a luminous intensity according to the formula defined in the present invention, It can be seen that the output loss of the first embodiment can be reduced.

Referring to FIG. 11, it can be seen that as the luminous intensity increases, the output loss can be greatly reduced even if the main processing process is performed for a short process time. This has a tendency to coincide with the expression of the time-luminosity defined in the present invention.

In the manufacturing method of the solar cell 100 according to the present embodiment, at least the main treatment step (ST56 in FIG. 3, hereinafter the same) of the post-treatment step (ST50 in FIG. 3, (Hereinafter referred to as "post-treatment apparatus") 200 of a solar cell. Hereinafter, the post-processing apparatus 200 according to the present embodiment will be described in detail.

12 is a schematic view showing a post-treatment apparatus of a solar cell according to an embodiment of the present invention.

12, a post-processing apparatus 200 for a solar cell according to the present embodiment basically includes a light source unit 222 and a first heat source unit 224 together to form a semiconductor substrate 110 And a main region 220 for performing a main section (ST562 in FIG. 5, the same applies hereinafter) to a solar cell 100 (hereinafter referred to as a solar cell 100) including the same. Further, the temperature increase region 210 for performing the temperature increase period (ST561 in FIG. 5, the same applies hereinafter) of the main region 220 may be further located, and after the main period ST562, ST563, hereinafter the same) may be further provided.

In this embodiment, the temperature increase zone 210, the main zone 220 and the cooling zone 230 are successively positioned in order, and the conveyor belt 202 (see FIG. 2) is placed in a state where the solar cell 100 is placed on a conveying means such as a conveyor belt 202, The solar cell 100 positioned on the conveyor belt 202 can be moved in order to pass through the temperature increase zone 210, the main zone 220 and the cooling zone 230 in order. The temperature increase step ST561 is performed on the solar cell 100 in the temperature increase region 210 and the process of the main section ST562 is performed on the solar cell 100 in the main region 220 , And then the process of the cooling section ST563 is performed on the solar cell 100 in the cooling region 230. [

The conveyor belt 202 may have various structures, systems, and the like in which the solar cell 100 can be stably placed. For example, the conveyor belt 202 may have a mesh structure to more effectively provide light, heat, etc. to the solar cell 100 and to keep the solar cell 100 at a constant temperature. However, the present invention is not limited thereto, and the conveyor belt 202 may have various structures.

In one example, the moving speed of the conveyor belt 202 may be between 50 mm / min and 1000 mm / min. The solar cell 100 can be moved at such a speed without any other impact or damage and the process of the temperature rise section ST561, the main section ST562 and the cooling section ST563 can be performed in the solar cell 100 for a desired time have.

However, the present invention is not limited thereto, and the moving speed and the like of the conveyor belt 202 may be variously modified. For example, in the case where the additional heat source 216 is located in the temperature increase zone 210 and the temperature can be increased quickly, the moving speed of the conveyor belt 202 can be increased. Alternatively, if the size of the temperature increase region 210, the main region 220, or the cooling region 230 is large so that the process can be performed for a sufficient time even if the movement speed is high, the movement speed can be increased. The speed of movement can be reduced so that the process can be performed for a sufficient time. Also, the moving speeds of the temperature-rising region 210, the main region 220, and the cooling region 230 may be different from each other. Various other variations are possible.

When the heating zone 210, the main zone 220 and the cooling zone 230 are processed by an in-line process using the conveyor belt 202 or the like, output can be increased. In this embodiment, the conveyor belt 202 is shown as an example of conveying means for the inline process, but the present invention is not limited thereto. Accordingly, various structures, methods, and the like capable of performing the inline process can be applied.

The present invention is not limited thereto and only two of the temperature rising region 210, the main region 220 and the cooling region 230 (for example, the temperature rising region 210, the main region 220, and the cooling region 230) The main region 220 and the main region 220 and the cooling region 230) may be consecutively performed and the other one may have an independent batch structure. Alternatively, the temperature increase region 210, the main region 220, and the cooling region 230 may be configured independently of each other. In the case of having an independent arrangement structure, the solar cell 100 can be transferred by an operator, another equipment, or the like. If the temperature increase region 210, the main region 220, and / or the cooling region 230 have an independent arrangement structure, it is possible to minimize external interference during the process, thereby maximizing the effect of the process and improving the process uniformity have. In addition, since the conveyor belt 202 can be omitted, burden on equipment can be reduced. An example of this will be described later in more detail with reference to FIG. However, the present invention is not limited thereto and various modifications are possible.

Hereinafter, the main region 220 performing the main section ST562, which is a basic process of the main processing ST56, will be described in detail, and then the temperature increase region 210 and the cooling region 230 will be described in detail.

As described above, in the main section ST562, the solar cell 100 (or the semiconductor substrate 110, hereinafter the same) is heat-treated at a constant temperature while providing light of a constant brightness. Accordingly, in the main region 220, a light source portion 222 capable of providing light of a constant light intensity to the solar cell 100, a heat source portion capable of heating the solar cell 100 at a constant temperature (224).

The light source unit 222 serves to provide the solar cell 100 with light having a predetermined luminous intensity. As described above, in the main section ST562, 1.7 X 10 ² mW / cm ² Since the light needs to have a light intensity of 10 ⁵ mW / cm ^2, light source 222 is 1.7 X 10 ² mW / cm ² To 10 &lt; ⁵ &gt; mW / cm &lt; ² &gt;.

At this time, various methods of adjusting the brightness of the light source unit 222 may be applied in order to provide the light of the brightness required for the main section ST562. That is, the number, types, and outputs of the light sources 222a and 222b constituting the light source unit 222 can be adjusted or the distance between the light sources 222a and 222b and the solar cell 100 can be changed.

In this embodiment, the light source unit 222 may include a plurality of light sources 222a and 222b to provide sufficient light to the solar cell 100. [ However, the present invention is not limited thereto, and it is also possible that only one light source 222a or 222b is provided when light of a large light intensity is not required.

In this embodiment, the light sources 222a and 222b may be formed of a plasma lighting system (PLS) that provides light by plasma light emission. In a plasma lighting system, a specific gas is filled in a bulb, and an electromagnetic wave or an incident beam such as a microwave generated by a magnetron is applied to highly ionize the gas inside the bulb (i.e., generate a plasma) Light is emitted from the plasma.

The plasma lighting system does not use electrodes, filaments, and mercury, which are components of conventional lighting systems, and is environmentally friendly and has a semi-permanent life. And the luminous flux retention rate is very excellent. Therefore, even when used for a long time on the basis of a super light flux, the amount of light change is small. It is resistant to heat and is excellent in thermal stability, so that it can be used in the same space as the heat source part 224, and can emit light of sufficient brightness. For reference, other light sources, such as light emitting diodes and the like, are vulnerable to heat and are difficult to use with the heat source portion 224 and emit only light of a low level of luminous intensity. In addition, the plasma lighting system can emit substantially uniform continuous light over the entire wavelength of the visible light region, thereby providing light similar to sunlight. In this case, an In-Br compound formed by combining indium (In) and bromine (Br) with a gas filling the inside of the bulb of the plasma lighting system may be used. Thus, it is possible to have a spectrum more similar to that of sunlight than in the case of using a conventional sulfur gas. Providing light having a spectrum similar to that of sunlight in this way can perform the main processing step (ST56) under conditions similar to the sunlight, so that the power loss or the like, which can be generated by the sunlight, Can be effectively prevented.

The cover substrate 223 located on the front surface (that is, the surface from which light is emitted) of the light sources 222a and 222b in this embodiment includes a base substrate 223a and a material positioned on the base substrate 223a and having a different refractive index And may include a plurality of layers 223b.

The base substrate 223a may be made of a material having transparency so that light can pass therethrough while having the strength to protect the light sources 222a and 222b. For example, the base substrate 223a may be made of glass or the like.

The plurality of layers 223b may be formed by stacking layers having different refractive indices, and may function to block undesired light. For example, the plurality of layers 223b can be made of an oxide-based material having different refractive indices, thereby shielding light having a wavelength of less than 600 nm (particularly 400 nm to 600 nm) and a wavelength of more than 1000 nm. Various materials, lamination structures, etc. capable of blocking light having a wavelength of less than 600 nm (particularly 400 nm to 600 nm) and a wavelength of more than 1000 nm can be applied by the material, the lamination structure, etc. of the plurality of layers 223b.

Although a plurality of layers 232b are disposed on the outer surface side of the base substrate 223a, the present invention is not limited thereto. Accordingly, the plurality of layers 232b may be located on the inner surface of the base substrate 223a, or both the inner surface and the outer surface.

Accordingly, light applied to the solar cell 100 by the light sources 222a and 222b may have a wavelength of 600 nn to 1000 nm. When the light in the ultraviolet region is cut off from the light provided by the light sources 222a and 222b, the passivation film 22 (and / or 22 in Fig. 1), which may be generated when ultraviolet rays are irradiated to the solar cell 100 32 in Fig. 8, the same applies hereinafter) can be minimized. When light in the infrared region of the light provided by the light sources 222a and 222b is cut off, the light sources 222a and 222b can minimize the heat supply to the solar cell 100. In contrast, when the light sources 222a and 222b provide light in the infrared region to the solar cell 100, the light source unit 222 as well as the heat source unit 224 can provide heat to the solar cell 100, It may be difficult to maintain the temperature of the substrate 100 at a desired temperature. That is, in this embodiment, the temperature of the light source unit 222 is prevented from affecting the temperature as much as possible so that the temperature can be independently controlled by the heat source unit 224.

In this embodiment, the cover substrate 223 constituting the light sources 222a and 222b cuts off some light, and only the effective light can be supplied to the solar cell 100 in the main section ST562. Then, the effect of the main section ST562 can be maximized by a simple structure. However, the present invention is not limited thereto, and a part of light may be blocked by a filter installed between the light sources 222a and 222b and the solar cell 100 separately from the light sources 222a and 222b.

In this embodiment, a plurality of light sources 222a and 222b including a plasma lighting system is used. Thus, the light of the desired light intensity can be stably provided to the solar cell 100. However, the present invention is not limited to this, and at least one of the light sources 222a and 222b of the main area 220 may be a plasma lighting system, and the remaining light sources may be composed of other types of light sources. Various other variations are possible.

The heat source unit 224 provides appropriate heat for the solar cell 100 in the main area 220 to have a desired temperature. At this time, various methods, structures, and shapes can be applied to the heat source unit 224.

In this embodiment, the heat source unit 224 may include a plurality of heat sources 224a and 224b to provide the solar cell 100 with sufficient heat. However, the present invention is not limited thereto, and it is also possible that only one heat source 224a or 224b is provided in consideration of the structure, the mode and the shape of the heat sources 224a and 224b, and the heat treatment temperature of the solar cell 100 and the like.

For example, the heat sources 224a and 224b constituting the heat source unit 224 may be ultraviolet lamps, and may be, for example, halogen lamps. Alternatively, a coil heater or the like may be used as the heat sources 224a and 224b. If the heat sources 224a and 224b use an ultraviolet lamp such as a halogen lamp or the like, the temperature can be raised at a higher rate than the coil heater. If the heat sources 224a and 224b include coil heaters, the equipment cost can be reduced.

The heat source unit 224 is located apart from the solar cell 100 or the conveyor belt 202 on which the solar cell 100 is placed and heats the atmosphere of the main area 220 by radiation The solar cell 100 can be heated by an atmosphere heating method. Thus, problems caused by damage to the solar cell 100 by the heat source unit 224, heat generation in a local portion of the solar cell 100, and the like can be minimized. For example, when the heat sources 224a and 224b of the heat source portion 224 are ultraviolet lamps, direct irradiation of ultraviolet rays may lower the passivation characteristics of the passivation films 22 and 32. [ When the heat sources 224a and 224b of the heat source unit 224 are in direct contact with each other, if a process error occurs, the solar cell 100 is locally heated to heat an undesired portion of the solar cell 100 And the like.

However, the present invention is not limited thereto, and the solar cell 100 may be heated by conduction or the like instead of the atmospheric heating, which will be described later in detail with reference to FIG.

As described above, in the main section ST562, the solar cell 100 is heat-treated by maintaining the predetermined temperature by the heat source unit 224 while supplying light by the light source unit 222. [ In this embodiment, the light source unit 222 and the heat source unit 224 provide light and heat to the solar cell 100 at positions separated from each other. That is, the light sources 222a and 222b constituting the light source unit 222 are located together, and the heat sources 224a and 224b constituting the heat source unit 224 are located together, and the light sources 222a and 222b constituting the light source unit 222 And the heat sources 224a and 224b constituting the heat source unit 224 are not mixed with each other. In this state, the light source unit 222 and the heat source unit 224 provide light and heat to the solar cell 100, so that the influence of the light source unit 222 and the heat source unit 224 on each other can be minimized.

For example, the light source unit 222 may be located on one side of the solar cell 100 and the heat source unit 224 may be on the other side of the solar cell 100 in the main region 220. Then, the light and heat generated by the light source unit 222 and the heat source unit 224 can be effectively transmitted to the solar cell 100, and interference between the solar cell 100 and the solar cell 100 can be minimized.

For example, when the light source unit 222 is located on the upper side of the solar cell 100 (that is, on the upper side of the conveyor belt 202) and the heat source unit 224 is located on the lower side of the solar cell 100 Lower side). When the light source unit 222 is positioned below the conveyor belt 202, a part of the light provided by the light source unit 222 is blocked by the conveyor belt 202 and can not effectively provide light, while the heat source unit 224, Sufficient heat can be provided to the solar cell 100 by the atmosphere heating even if the solar cell 100 is positioned below the solar cell module 202. The light source unit 222 is positioned on the upper side of the solar cell 100 or the conveyor belt 202 and the heat source unit 224 is positioned on the lower side of the solar cell 100 or the conveyor belt 202 . However, the present invention is not limited thereto, and specific positions of the light source unit 222 and the heat source unit 224 may be changed.

The temperature rising region 210 positioned before the main region 220 is an area for performing the temperature rising period ST561 of the main process ST56. The heat source unit (or the second heat source unit) (or the second heat source unit) for providing heat to the solar cell 100 as the section for preheating the solar cell 100 to the required temperature in the main section ST562 of the main process ST56 214).

The heat source portion 214 of the temperature increase region 210 may be located on the same side (for example, the lower side) as the heat source portion 224 of the main region 220. As described above, the heat source unit 214 of the temperature-rising region 210 and the heat source unit 224 of the main region 220 are disposed on one side, so that the structure can be simplified. However, the present invention is not limited thereto, and the heat source unit 214 of the temperature increase zone 210 and the heat source unit 224 of the main zone 220 may be variously modified.

The heat source unit 214 provides appropriate heat for the solar cell 100 to be preheated to a desired temperature in the temperature increase zone 210. [ At this time, various methods, structures, and shapes can be applied to the heat source unit 214.

In this embodiment, the heat source 214 may include a plurality of heat sources 214a and 214b to provide the solar cell 100 with sufficient heat. However, the present invention is not limited thereto, and it is also possible that only one heat source 214a or 214b is provided in consideration of the structure, the mode and the shape of the heat sources 214a and 214b, and the heat treatment temperature of the solar cell 100 and the like.

For example, the heat sources 214a and 214b constituting the heat source unit 214 may be an ultraviolet lamp, for example, a halogen lamp. Alternatively, a coil heater or the like may be used as the heat sources 214a and 214b. If the heat sources 214a and 214b use an ultraviolet lamp such as a halogen lamp or the like, the temperature can be raised at a higher rate than the coil heater. If the heat sources 214a and 214b include the coil heater, the facility cost can be reduced.

In this embodiment, the heat source unit 214 is an atmosphere heating method in which the solar cell 100 or the conveyor belt 202 on which the solar cell 100 is placed is spaced apart and the air of the main area 220 is heated by radiation The solar cell 100 can be heated. Thus, problems caused by damage to the solar cell 100 by the heat source unit 214 or heat generation in a local portion of the solar cell 100 can be minimized.

The temperature increase region 210 may further include an additional heat source portion 216 located on a side (for example, the upper side) opposite to the heat source portion 214. Providing heat from both sides of the solar cell 100 in the temperature increase region 210 by the heat source unit 214 and the additional heat source unit 216 can improve the temperature rise rate of the solar cell 100. The additional heat source 216 may be positioned adjacent to the inlet of the temperature increase region 210 where the solar cell 100 enters. Then, the rate of temperature rise in the temperature-rising region 210 can be further improved, and productivity can be improved.

The additional heat source unit 216 may be applied to various systems, structures, and configurations. In this embodiment, the additional heat source 216 includes one heat source, but the present invention is not limited thereto. Therefore, it is also possible that a plurality of heat sources of the additional heat source 216 are provided in consideration of the structure, mode, and shape of the additional heat source 216 and the heat treatment temperature of the solar cell 100.

Further, another additional light source (or first additional light source) 212 may be further disposed in the temperature increase region 210. This is because when it is necessary to provide a larger amount of light in the main section ST562 performed in the main region 220 or when it is necessary to increase the processing time of the main section ST562, (ST562) can be performed in the temperature increase region 210 using the light source 212 as a light source. That is, a part of the temperature increase region 210 may be used as the main region 220, if necessary. The barrier rib 240 will be described in more detail below.

This additional light source 212 may be located adjacent to the main region 220 in the temperature increase region 210 and may easily serve as the main region 220 if necessary. Referring to FIG. 5, since the temperature near the main section ST562 is the same as or similar to the temperature of the main section ST562 during the temperature rise period ST561, the portion corresponding to the main section ST562 can be used as the main section 220. [

Various methods, structures, and shapes can be applied to the additional light source 212. The additional light source 212 may be constructed of the same plasma lighting system as the light sources 222a and 222b of the light source unit 222 and may have the same or similar structure as the light sources 222a and 222b of the light source unit 222. [ In the present embodiment, one additional light source 212 is provided, but the present invention is not limited thereto. Therefore, it is also possible that a plurality of additional light sources 212 are provided in consideration of the structure, mode, form, and required light intensity of the additional light source 212.

However, the additional light source 212 is not an essential configuration. Therefore, since the light is not supplied in principle in the temperature rising period ST561 performed in the temperature rising region 210, it is also possible to perform only the temperature rising period ST561 without the additional light source 212 in the temperature rising region 210 .

The partition 240 defining or defining the temperature-rising region 210 and the main region 220 may be positioned between the temperature-rising region 210 and the main region 220. The barrier rib 240 serves to prevent undesired coupling due to light from being supplied to the solar cell 100 located in the temperature rising region 210 and to cause the light in the main region 220 to be generated in the temperature rising period ST561 do.

The barrier rib 240 may have various structures. For example, the partition 240 may be a structure (e.g., a metal plate, an insulating plate, or the like) that physically separates the temperature increase region 210 and the main region 220. At this time, the partition 240 can be installed to be movable up and down. Then, when it is necessary to provide a larger amount of light in the main section ST562 performed in the main region 220 or when it is necessary to increase the processing time of the main section ST562, And the same processing as the main section ST562 is performed in the temperature increase region 210 using the additional light source 212 of the temperature increase region 210 as a light source. When it is not necessary to use the additional light source 212 as a light source, the partition wall portion 40 can be lowered to prevent light from the main region 220 from flowing into the temperature increase region 210.

The cooling zone 230 located after the main zone 220 is an area for performing the cooling zone ST563 of the main process ST56. Thus, the solar cell 100 is cooled during the main section ST562 of the main process ST56. Accordingly, the cooling region 230 does not have a heat source portion.

The solar cell 100 may be slowly cooled naturally by the atmosphere or may be cooled more quickly by using a separate cooling device. However, the present invention is not limited thereto, and various structures for cooling can be applied.

A further additional light source 232 may be further located in the cooling zone 230. This is because when it is necessary to provide a larger amount of light in the main section ST562 performed in the main region 220 or when it is necessary to increase the processing time of the main section ST562, So that the same processing as the main section ST562 can be performed in the cooling region 230 using the light source 232 as a light source. That is, a part of the cooling area 230 may be used as the main area 220, if necessary. This additional light source 216 may be located at a location adjacent to the main area 220 in the cooling area 230 to facilitate serving as the main area 220 if necessary.

Various methods, structures, and shapes can be applied to the additional light source 232. For example, the additional light source 232 may be constructed of the same plasma lighting system as the light sources 222a and 222b of the light source unit 222, and may have the same or similar structure as the light sources 222a and 222b of the light source unit 222. Although one additional light source 232 is illustrated in this embodiment, the present invention is not limited thereto. Therefore, it is also possible that a plurality of additional light sources 232 are provided in consideration of the structure, mode, shape, and necessary light intensity of the additional light source 232.

However, the additional light source 232 is not an essential configuration. Therefore, it is not necessary to provide light in the cooling period ST563 performed in the cooling region 230, so that it is also possible to perform only the cooling period ST563 without the additional light source 232 in the cooling region 230 Do.

Although not separately shown, the partition wall portion may be positioned between the main region 220 and the cooling region 230. The barrier ribs may have the same or similar structure as the barrier ribs located between the temperature rising region 210 and the main region 220. However, no problem arises due to light even if light is incident in the cooling region 230, so that a partition wall portion may not be provided between the main region 220 and the cooling region 230. Then, the structure of the post-processing apparatus 200 can be simplified.

In this embodiment, the air curtain members 252, 254, 256, and 252 that provide air at a predetermined speed to at least one of the temperature rising region 210, the main region 220, and the cooling region 230, 258 may be installed. For example, the air curtain members 252, 254, 256, and 258 may have a bar shape having a plurality of air injection holes to which air is supplied. However, the present invention is not limited thereto. Accordingly, the air curtain members 252, 254, 256, and 258 may have various structures, schemes, and the like.

The first air curtain member 252 is located at the inlet of the temperature increase zone 210 and the second air curtain member 254 is located between the temperature increase zone 210 and the main region 220. In this embodiment, The third air curtain member 256 may be positioned between the region 220 and the cooling region 230 and the fourth air curtain member 258 may be positioned at the outlet portion of the cooling region 230. At this time, the second air curtain member 254 may be installed in the partition wall 40 located between the temperature increase region 210 and the main region 220, or separately from the partition wall portion 40. The third air curtain member 256 may be provided on the partition wall portion or may be provided separately from the partition wall portion 40 when the partition wall portion exists between the main region 220 and the cooling region 230. [ Various other variations are possible.

Here, the first air curtain member 252 may be located at the inlet of the temperature increase zone 210 to block the outside air and prevent heat loss of the post-treatment apparatus 200. The second air curtain member 254 may partition the heating region 210 and the main region 220 to prevent heat, light, and the like from interfering with each other. The third air curtain member 256 may partition the main area 220 and the cooling area 230 to prevent heat, light, and the like from interfering with each other. The fourth air curtain member 258 is positioned at the outlet portion of the cooling zone 230 to cut off the outside air and help cool the solar cell 100.

Although the first to fourth air curtain members 252, 254, 256, and 258 are illustrated in this embodiment, the present invention is not limited thereto. Accordingly, it is possible to provide only one of the first to fourth air curtain members 252, 254, 256, and 258, or to provide another air curtain member at another position.

The operation of the above-described post-processing apparatus 200 will be described. After the solar cell 100 to be subjected to the main treatment process ST56 of the post-treatment step ST50 is placed on the conveyor belt 202, the conveyor belt 202 is heated by the temperature-rising zone 210, the main zone 220, Area 230 in order. The solar cell 100 is preheated to a temperature required for the main section ST562 by the heat source unit 214 and the light source unit 222 is connected to the solar cell 100 in the main region 220 Provides heat and heat source 224 provides heat to passivate the interior or bulk of semiconductor substrate 110 (e.g., convert H ⁺ to H ⁰ or H ^- to form BH bonds) And the solar cell 100 is cooled in the cooling region 230.

At this time, in the main region 220, the light source unit 222 provides the light of the light intensity necessary for the main section ST562, and the temperature of the solar cell 100 is set to the temperature required for the main section ST564 . The moving speed of the conveyor belt 202 can be adjusted to keep the solar cell 100 in the main area 220 for a desired process time. Accordingly, the main process ST56 can be performed on the solar cell 100 at the heat treatment temperature, light intensity, and process time satisfying the conditions of the above-described formulas 1 to 15.

That is, according to the post-processing apparatus 200 according to the present embodiment, the main processing step of the post-processing step (ST50) for post-processing the semiconductor substrate 110 or the solar cell 100 including the same by providing heat and light together (ST56) can be performed stably and efficiently, and the temperature, light intensity, and process time required for the main process ST56 of the post-process ST50 can be maintained to maximize the effect of the main process ST56 .

The post-processing apparatus 200 described above can be used in a stand-alone manner in which the solar cell 100 having completed the step of forming electrodes (ST40 in FIG. 3, It may be post-processed. Or a part or all of the step (ST40) in which the post-processing apparatus 200 forms the electrode (particularly, the step of firing ST44 / the step of diffusing hydrogen ST52) and the preliminary heat treatment step ST54 . A part or all of the step (ST40) of forming the electrodes in the post-processing apparatus 200 by controlling the operation of the light source unit 222 and the heat source units 214 and 224, The hydrogen diffusion step ST52) and the preliminary heat treatment step ST54 may be performed. Various other variations are possible.

In the above-described embodiment, the inline process using the conveyor belt 202 is used and the atmosphere heating is used in the temperature-rising region 210 and the main region 220. However, the present invention is not limited thereto. This modification will be described in detail with reference to FIG.

13 is a schematic view showing a post-treatment apparatus for a solar cell according to a modification of the present invention. The same or similar parts to those of the above-described embodiment can be applied to the following embodiments. Accordingly, the same or similar parts to those of the above-described embodiment will not be described in detail.

13, the solar cell 100 is placed on the work table 204, and the work table 204 is connected to the heat source 214 of the temperature increase area 210 or the heat source 214 of the main area 220, It may be pre-heated or heat-treated in a state of being in contact with the portion 224. Then, the solar cell 100 is supplied with heat by conduction.

In the drawings and the description, the solar cell 100 is placed on the heat source units 214 and 224 with the workbench 204 interposed therebetween. However, the present invention is not limited thereto. Therefore, it is also possible to cause the solar cell 100 to directly contact the heat source units 214 and 224 without placing the separate workbench 204 therebetween. Various other variations are possible.

As described above, when the solar cell 100 is heated by conduction, the solar cell 100 can be heated within a short time. Then, the process is performed in a state where the solar cell 100 is positioned in the heating region 210 and the main region 220. Therefore, by controlling the time for the solar cell 100 to stay in the temperature-rising region 210 or the main region 220, the time for which the solar cell 100 is provided with light and heat can be easily controlled. Also, the process can be performed for a desired process time without increasing the size of the temperature-rising region 210 and the main region 220.

In the drawing, it is exemplified that the heating region 210 is provided with an additional heat source 216 for heating the atmosphere by radiation, thereby improving the heating efficiency. However, the present invention is not limited thereto, and the additional heat source unit 216 may not be provided, and various other modifications are possible.

In the figure, it is illustrated that the temperature increase region 210, the main region 220, and the cooling region 230 have a batch space having independent spaces. At this time, the solar cell 100 preheated in the temperature increase region 210 can be moved over the heat source portion 214 within the main region 220 by the conveyor belt or the operator. At this time, the solar cell 100 may be moved on the work table 214, or may be moved alone without the work table 214. Similarly, the solar cell 100 performed in the main zone ST562 dl in the main zone 220 can be moved to the cooling zone 230 by the conveyor belt or the operator. At this time, the solar cell 100 may be moved on the work table 214, or may be moved alone without the work table 214.

However, the present invention is not limited thereto, and the temperature rising section 210, the main section 220 and the cooling section 230 are continuously positioned, and the temperature rise section ST561, the main section ST562, and the cooling section ST563 Or may be performed by an in-line process. Alternatively, the temperature increase region 210 and the main region 220 may be continuously positioned and processed by an inline process, and the cooling region 230 may have an independent arrangement structure. Alternatively, the temperature increase region 210 has an independent arrangement structure, and the main region 220 and the cooling region 230 are continuously positioned, and the process can be performed by an inline process. Various other variations are possible.

Features, structures, effects and the like according to the above-described embodiments are included in at least one embodiment of the present invention, and the present invention is not limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100: Solar cell
200: Post-processing device
202: Conveyor belt
210:
212: additional light source
214:
216: additional heat source
220: main area
222: light source
224:
230: Cooling zone
232: Additional light source
240:

Claims (19)

A post-processing apparatus for a solar cell that performs a post-processing step including a semiconductor substrate, a conductive type region, and a main section for performing heat treatment while supplying light to a solar cell including an electrode layer or electrode electrically connected to the conductive type region,
And a main area for performing the main section,
A first heat source part for providing heat to the semiconductor substrate in the main area and a light source part for providing light to the semiconductor substrate,
Wherein the light source unit includes a light source configured by a plasma lighting system (PLS)
Wherein the light source unit is located on one side of the semiconductor substrate, the first heat source unit is located on the other side of the semiconductor substrate, and the light source unit is not disposed on the other side of the semiconductor substrate. The method according to claim 1,
Wherein a wavelength range of light provided to the semiconductor substrate by the light source is 600 nm to 1000 nm. The method according to claim 1,
Wherein the cover substrate located on a surface where light is emitted from the light source includes a base substrate and a plurality of layers located on the base substrate and including oxides having different refractive indices. The method according to claim 1,
Wherein the light source unit and the first heat source unit provide light and heat to the semiconductor substrate at positions away from each other. The method according to claim 1,
And a temperature increase region that is performed before the main section and performs a temperature increase period for preheating the semiconductor substrate,
Wherein the second heat source portion for preheating the semiconductor substrate is located in the temperature rising region. 6. The method of claim 5,
Further comprising an additional heat source located at an inlet portion of the temperature increase region and at a side opposite to the second heat source portion. The method according to claim 1,
And a cooling region that is performed after the main region and performs a cooling section for cooling the semiconductor substrate. The method according to claim 1,
A temperature increase region that is performed before the main section and performs a temperature increase period for preheating the semiconductor substrate;
A cooling zone for performing a cooling zone performed after the main zone; And
Wherein the solar cell is placed in the heating zone, the main zone and the cooling zone,
Lt; / RTI &gt;
Wherein the temperature rising section, the main section, and the cooling section are performed by an in-line process. 9. The method of claim 8,
Wherein at least one of the temperature-rising region and the main region, and between the main region and the cooling region, is partitioned. 9. The method of claim 8,
Wherein at least one of the temperature rising region and the cooling region further includes an additional light source positioned adjacent to the main region. 9. The method of claim 8,
Further comprising an air curtain member located in at least one of an inlet portion of the temperature rising region, an area between the heating region and the main region, between the main region and the cooling region, and an outlet portion of the cooling region, . The method according to claim 1,
A temperature increase region that is performed before the main section and performs a temperature increase period for preheating the semiconductor substrate; And
A cooling zone for performing a cooling zone performed after the main zone;
/ RTI &gt;
Wherein at least one of the temperature rising region, the main region, and the cooling region has an independent batch structure. The method according to claim 1,
Wherein the first heat source unit provides heat to the semiconductor substrate by heating or conduction of atmosphere by radiation. The method according to claim 1,
Wherein the temperature in the main region is 100 to 800 占 폚 and the temperature and luminous intensity in the main region satisfy the following Equation 1 and the luminous intensity and the processing time satisfy the following Equations 2 to 5:
&Lt; Formula 1 >
1750 - 31.8 · T + (0.16) · T ² ≤ I ≤ 10 ⁵
&Quot; (2) &quot;
1.7 x 10 ² ? I <10 ³ , 13000 - (31.7) I + (0.02)? (I) ² ? P? 10000
&Quot; (3) &quot;
10 ³ ? I <10 ⁴ , 1030 - (0.25) I + (1.5 X 10 ^-5 )? (I) ² ? P? 10000
&Lt; Equation 4 &
10 ⁴ ? I? 10 ⁵ , 35.5 - (0.0012) I + (10 ^-8 )? (I) ² ? P? 10000
&Lt; Eq. 5 &
5 X 10 ⁴ ? I? 10 ⁵ , 0.5? P? 10000
(Where T is the temperature in the main region, ° C is the unit, I is the light intensity in the main region, mW / cm ² , and the process time of the main region is sec .) A post-processing apparatus for a solar cell that performs a post-processing step including a semiconductor substrate, a conductive type region, and a main section for performing heat treatment while supplying light to a solar cell including an electrode layer or electrode electrically connected to the conductive type region,
And a main area for performing the main section,
A first heat source part for providing heat to the semiconductor substrate in the main area and a light source part for providing light to the semiconductor substrate,
Wherein the light source unit and the first heat source unit provide light and heat to the semiconductor substrate at positions away from each other,
Wherein the light source unit is located on one side of the semiconductor substrate with the semiconductor substrate interposed therebetween and the first heat source unit is located on the other side of the semiconductor substrate so as to face the light source unit, Processing device. 16. The method of claim 15,
Wherein the light source unit includes a plurality of light sources,
Wherein the first heat source unit includes a plurality of the heat sources,
Wherein the plurality of light sources are positioned adjacent to each other,
Wherein the plurality of heat sources are adjacent to each other,
Wherein the plurality of light sources and the plurality of heat sources are spaced apart from each other. 17. The method of claim 16,
Wherein the light source portion is located above the semiconductor substrate,
Wherein the first heat source portion is located below the solar cell. A post-processing apparatus for a solar cell that performs a post-processing step including a semiconductor substrate, a conductive type region, and a main section for performing heat treatment while supplying light to a solar cell including an electrode layer or electrode electrically connected to the conductive type region,
A main area for performing the main section;
A temperature increase region that is performed before the main section and performs a temperature increase period for preheating the semiconductor substrate; And
A cooling region that is performed after the main region and performs a cooling region for cooling the semiconductor substrate;
/ RTI &gt;
A first heat source part for providing heat to the semiconductor substrate in the main area and a light source part for providing light to the semiconductor substrate,
The light source portion is located on one side of the semiconductor substrate, the first heat source portion is located on the other side of the semiconductor substrate, the light source portion is not disposed on the other side of the semiconductor substrate,
A second heat source portion for preheating the semiconductor substrate in the temperature increase region,
Wherein the light source unit comprises a light source including a plasma lighting system (PLS). 19. The method of claim 18,
The temperature raising period, the main period and the cooling period may be performed by an in-line process,
Wherein at least one of the main heating region, the main region, and the cooling region has an independent batch structure.

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