KR20170034522A - Conductive support substrate, light emitting device and light emitting apparatus including the same - Google Patents

Conductive support substrate, light emitting device and light emitting apparatus including the same Download PDF

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Publication number
KR20170034522A
KR20170034522A KR1020150132884A KR20150132884A KR20170034522A KR 20170034522 A KR20170034522 A KR 20170034522A KR 1020150132884 A KR1020150132884 A KR 1020150132884A KR 20150132884 A KR20150132884 A KR 20150132884A KR 20170034522 A KR20170034522 A KR 20170034522A
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South Korea
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layer
light emitting
conductive
bonding layer
substrate
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KR1020150132884A
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Korean (ko)
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이준희
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서울바이오시스 주식회사
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Publication of KR20170034522A publication Critical patent/KR20170034522A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

Disclosed are a light emitting element and a light emitting device. The light emitting element includes: a conductive support substrate; and a light emitting structure. One of first and second conductive semiconductor layers is electrically connected with the conductive support substrate. The conductive support substrate includes: a base layer having a first thermal expansion coefficient; upper and lower support layers placed on and under the base layer respectively and having a second thermal expansion coefficient which is greater than the first thermal expansion coefficient; upper and lower protecting layers placed on the upper support layer and under the lower support layer respectively; and upper and lower bonding layers placed on the upper protecting layer and under the lower protecting layer respectively. The upper and lower support layers include the same material. The upper and lower protecting layers include the same material, and the light emitting structure is bonded to the conductive support substrate through the upper bonding layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a conductive supporting substrate, a light emitting device including the conductive supporting substrate,

The present invention relates to a light emitting device and a light emitting device, and more particularly to a light emitting device including a conductive supporting substrate and a light emitting device including the same.

In recent years, there is an increasing demand for a small-sized high-output light-emitting device, and a demand for a vertical-type light-emitting device having excellent heat dissipation efficiency is increasing. In manufacturing such a vertical type light emitting device, a step of separating the growth substrate from the nitride based semiconductor layer is required. Generally, a laser lift-off (LLO) technique is mainly used for growth substrate separation. Recently, a chemical lift-off (CLO) technique, a stress lift-off ) Technologies are being researched and developed. Such a growth substrate separation process can also be applied to a flip chip type light emitting device.

In the step of separating the growth substrate from the semiconductor layer described above, a method of attaching the supporting substrate to the semiconductor layer on the opposite side of the growth substrate and separating the growth substrate from the semiconductor layer is generally used. However, after the growth substrate is separated, bowing due to a difference in thermal expansion coefficient between the growth substrate, the semiconductor layer, and the support substrate may occur, and cracks may occur in the semiconductor layer due to such bouling, break) may occur. In the vertical type light emitting device, the supporting substrate serves as an electrode and also serves as a heat sink. Therefore, since the heat dissipation characteristics of the support substrate affect the reliability and performance of the light emitting device, a support substrate having excellent heat dissipation characteristics in a high power vertical type light emitting device is required.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a support substrate capable of minimizing damage to a light emitting device when a growth substrate is separated during a light emitting device manufacturing process.

Another object of the present invention is to provide a method of manufacturing a light emitting device using the support substrate.

Another object of the present invention is to provide a light emitting device including the support substrate and a light emitting device including the same.

A light emitting device according to an aspect of the present invention includes: a conductive supporting substrate; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, One of the first and second conductivity type semiconductor layers being electrically connected to the conductive support substrate, the conductive support substrate comprising: a base layer having a first thermal expansion coefficient; An upper support layer and a lower support layer respectively located at upper and lower portions of the base layer and having a second thermal expansion coefficient greater than the first thermal expansion coefficient; An upper protective layer and a lower protective layer respectively located on an upper portion of the upper support layer and a lower portion of the lower support layer; And an upper bonding layer and a lower bonding layer respectively located on the upper portion of the upper protective layer and the lower portion of the lower protective layer, wherein the upper supporting layer and the lower supporting layer comprise the same material, Includes the same material, and the light emitting structure is bonded to the conductive supporting substrate by the upper bonding layer.

According to another aspect of the present invention, there is provided a light emitting device comprising: a substrate; And a light emitting element located on the substrate, wherein the light emitting element comprises: a conductive supporting substrate; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, One of the first and second conductivity type semiconductor layers being electrically connected to the conductive support substrate, the conductive support substrate comprising: a base layer having a first thermal expansion coefficient; An upper support layer and a lower support layer respectively located at upper and lower portions of the base layer and having a second thermal expansion coefficient greater than the first thermal expansion coefficient; An upper protective layer and a lower protective layer respectively located on an upper portion of the upper support layer and a lower portion of the lower support layer; And an upper bonding layer and a lower bonding layer respectively located on the upper portion of the upper protective layer and the lower portion of the lower protective layer, wherein the upper supporting layer and the lower supporting layer comprise the same material, The light emitting structure is bonded to the conductive supporting substrate by the upper bonding layer, and the light emitting element is bonded to the substrate by the lower bonding layer.

According to the present invention, there is provided a conductive supporting substrate that is prevented from warping or bowing, and a method of manufacturing a light emitting device using the conductive supporting substrate. Accordingly, damage of the light emitting structure due to warping or bowing of the conductive supporting substrate is prevented, so that the light emitting device having excellent reliability and the manufacturing method thereof can be provided. Further, the conductive supporting substrate can be applied like the electrode pad, A high output light emitting device with improved emission efficiency and a light emitting device including the same can be provided.

1 is a cross-sectional view illustrating a conductive support substrate according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a conductive supporting substrate according to another embodiment of the present invention.
3 to 7 are cross-sectional views illustrating a light emitting device and a method of manufacturing the same according to another embodiment of the present invention.
8 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
9A to 18B are plan and sectional views for explaining a light emitting device and a method of manufacturing the same according to another embodiment of the present invention.
19 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
20 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.
21 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
22 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
23 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

The light emitting device and the light emitting device according to the embodiments of the present invention can be implemented in various aspects.

A light emitting device according to aspects of the present invention includes: a conductive supporting substrate; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, One of the first and second conductivity type semiconductor layers being electrically connected to the conductive support substrate, the conductive support substrate comprising: a base layer having a first thermal expansion coefficient; An upper support layer and a lower support layer respectively located at upper and lower portions of the base layer and having a second thermal expansion coefficient greater than the first thermal expansion coefficient; An upper protective layer and a lower protective layer respectively located on an upper portion of the upper support layer and a lower portion of the lower support layer; And an upper bonding layer and a lower bonding layer respectively located on the upper portion of the upper protective layer and the lower portion of the lower protective layer, wherein the upper supporting layer and the lower supporting layer comprise the same material, Includes the same material, and the light emitting structure is bonded to the conductive supporting substrate by the upper bonding layer.

The upper support layer and the lower support layer may have a thickness smaller than that of the base layer.

The upper support layer and the lower support layer may have the same thickness.

The upper protective layer may have a thickness smaller than that of the upper supporting layer, and the lower protective layer may have a thickness thinner than the lower supporting layer.

The upper protective layer and the lower protective layer may have the same thickness.

The upper bonding layer and the lower bonding layer may include Au and may be formed of the same material.

The upper bonding layer and the lower bonding layer may be formed of different materials, and the upper bonding layer may include at least one of an alloy or a solid solution containing Au and Sn, an alloy or a solid solution containing In and Au, , And the lower bonding layer may include Au.

The base layer may include Mo, and the upper support layer and the lower support layer may include Cu.

The upper protective layer and the lower protective layer may include Ni.

In various embodiments, the light emitting device may further include a bonding strengthening layer interposed between the base layer and the upper support layer, and between the base layer and the lower support layer.

In various embodiments, the light emitting device is formed on the lower surface of the light emitting structure where the second conductive type semiconductor layer is located below the first conductive type semiconductor layer, and the first conductive type semiconductor layer is partially At least one hole exposed; A second electrode located at least below the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; An insulating layer partially covering the lower surface of the second electrode and the light emitting structure, and including at least one opening corresponding to the at least one hole; And a first electrode electrically connected to the first conductive type semiconductor layer exposed in the at least one hole through the opening of the insulating layer and at least partially covering the lower surface of the insulating layer, One electrode and the conductive supporting substrate may be bonded through the upper bonding layer.

The light emitting device may further include a second electrode pad electrically connected to the second electrode, a portion of the second electrode may extend from a side surface of the light emitting structure, and an upper portion thereof may be exposed, The second electrode pad may be located on a portion of the second electrode exposed.

The second electrode may include a reflective layer and a cover layer covering the reflective layer, and the partially exposed portion of the second electrode may be a part of the cover layer.

The light emitting device may further include an auxiliary bonding layer interposed between the first electrode and the upper bonding layer, and the auxiliary bonding layer may be formed of the same material as the upper bonding layer.

The auxiliary bonding layer and the upper bonding layer may include AuSn having an eutectic structure.

The auxiliary bonding layer and the upper bonding layer may be formed of Au and may be bonded to each other.

In various embodiments, the light emitting device may include a light emitting structure, the second conductivity type semiconductor layer being located below the light emitting structure located below the first conductivity type semiconductor layer, The second electrode and the conductive supporting substrate may be bonded to each other through the upper bonding layer.

The light emitting device may further include an auxiliary bonding layer interposed between the first electrode and the upper bonding layer, and the auxiliary bonding layer may be formed of the same material as the upper bonding layer.

The auxiliary bonding layer and the upper bonding layer may include AuSn having an eutectic structure.

The auxiliary bonding layer and the upper bonding layer may be formed of Au and may be bonded to each other.

According to another aspect of the present invention, there is provided a light emitting device comprising: a substrate; And a light emitting element located on the substrate, wherein the light emitting element comprises: a conductive supporting substrate; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, One of the first and second conductivity type semiconductor layers being electrically connected to the conductive support substrate, the conductive support substrate comprising: a base layer having a first thermal expansion coefficient; An upper support layer and a lower support layer respectively located at upper and lower portions of the base layer and having a second thermal expansion coefficient greater than the first thermal expansion coefficient; An upper protective layer and a lower protective layer respectively located on an upper portion of the upper support layer and a lower portion of the lower support layer; And an upper bonding layer and a lower bonding layer respectively located on the upper portion of the upper protective layer and the lower portion of the lower protective layer, wherein the upper supporting layer and the lower supporting layer comprise the same material, The light emitting structure is bonded to the conductive supporting substrate by the upper bonding layer, and the light emitting element is bonded to the substrate by the lower bonding layer.

The upper bonding layer and the lower bonding layer may be formed of different materials, and the upper bonding layer may include at least one of an alloy or solid solution including Au and Sn, an alloy or solid solution including In and Au, , And the lower bonding layer may include Au.

The light emitting device may further include an auxiliary bonding layer positioned between the substrate and the lower bonding layer, and the lower bonding layer and the auxiliary bonding layer may be formed of Au and may be bonded to each other.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where there are other components in between. Like reference numerals designate like elements throughout the specification.

1 is a cross-sectional view illustrating a conductive support substrate according to an embodiment of the present invention. 2 is a cross-sectional view illustrating a conductive supporting substrate according to another embodiment of the present invention.

Referring to FIG. 1, a conductive supporting substrate 200 according to an embodiment includes a base layer 210, an upper supporting layer 231, a lower supporting layer 233, an upper bonding layer 251, and a lower bonding layer 253 ). Further, the conductive supporting substrate 200 may further include bonding strengthening layers 221 and 223, an upper protective layer 241, and a lower protective layer 243. In particular, the conductive support plate 200 may include a structure in which a base layer 210 and support layers 231 and 233 having different thermal expansion coefficients are stacked.

The base layer 210 may have a first coefficient of thermal expansion and is generally disposed in the central region of the conductive support substrate 200. The first thermal expansion coefficient may be 7 x 10 -6 1 / K or less, but the present invention is not limited thereto. Further, the base layer 210 may include a conductive material having a relatively high thermal conductivity, for example, a metal or may be formed of a metal. For example, the base layer 210 may include at least one of Mo (molybdenum) and W (tungsten), may also be formed of Mo, and may be formed of an Mo-based alloy. At this time, the base layer 210 formed of Mo or an Mo-based alloy may further include C (carbon), O (oxygen), or the like as a dopant or an additive material.

The base layer 210 may have a relatively thick thickness and may have a thickness of at least about 50% of the total thickness of the conductive support substrate 200. The base layer 210 may have a thickness of about 50 탆 to 200 탆, and in one embodiment, the base layer 210 may have a thickness of about 100 탆.

The upper support layer 231 and the lower support layer 233 are located above and below the base layer 210, respectively. The upper support layer 231 and the lower support layer 233 may each have a second thermal expansion coefficient and the second thermal expansion coefficient is larger than the first thermal expansion coefficient of the base layer 210. [ Accordingly, the second thermal expansion coefficient may be more than 7 x 10 < -6 > 1 / K. Accordingly, the conductive supporting substrate 200 has supporting layers 231 and 233 having a relatively large thermal expansion coefficient (second thermal expansion coefficient) above and below the base layer 210 having a relatively small thermal expansion coefficient (first thermal expansion coefficient) May have a laminated structure.

The upper support layer 231 and the lower support layer 233 may include a conductive material having a relatively high thermal conductivity, for example, a metal or a metal. For example, the upper support layer 231 and the lower support layer 233 may include at least one of copper (Cu) and aluminum (Al), may be formed of Cu, and may be formed of a Cu- . The present invention is not limited thereto, and the upper support layer 231 and the lower support layer 233 formed of Cu or formed of a Cu-based alloy may further include a dopant or an additive material. The upper support layer 231 and the lower support layer 233 may include the same material and may be formed of the same material. For example, when the base layer 210 is formed of Mo, the upper support layer 231 and the lower support layer 233 may be formed of Cu, respectively.

The upper support layer 231 and the lower support layer 233 are thinner than the base layer 210. The upper support layer 231 and the lower support layer 233 may have substantially the same thickness. The upper support layer 231 and the lower support layer 233 may each have a thickness of about 3 탆 to 7 탆 and the upper support layer 231 and the lower support layer 233 may each have a thickness of about 4.8 탆, Thickness.

Since the conductive supporting substrate 200 includes the upper supporting layer 231 and the lower supporting layer 233 formed on the upper and lower portions of the base layer 210 as described above, Can be prevented or minimized. Specifically, for example, when the temperature of the conductive support substrate 200 is lowered from a relatively high temperature to a low temperature, an upper support layer 231 having a second thermal expansion coefficient as compared with the base layer 210 having the first thermal expansion coefficient, The support layer 233 is reduced to a larger ratio. In this case, compressive stress is generated in the base layer 210 and tensile stress is generated in the upper and lower support layers 231 and 233. The upper support layer 231 and the lower support layer 233 generate an opposite stress at the upper and lower portions of the relatively thick base layer 210 to prevent cracks or bouncing in the conductive support board 200 have. The anti-bouling effect can be enhanced when the materials forming the upper support layer 231 and the lower support layer 233 are the same, and further, when the thicknesses of the upper support layer 231 and the lower support layer 233 are equal, Can be further increased.

The conductive support substrate 200 may include at least one of a base layer 210 and an upper support layer 231 and at least one of a base layer 210 and a lower support layer 233. In some embodiments, (221, 223). The bonding strengthening layers 221 and 223 may include an upper bonding strengthening layer 221 and a lower bonding strengthening layer 223.

The bonding strengthening layers 221 and 223 can enhance bonding between the base layer 210 and the support layers 231 and 233 and prevent the support layers 231 and 233 from peeling off from the base layer 210 . Also, it may help to form the support layers 231 and 233 on the upper and lower portions of the base layer 210. For example, when the base layer 210 is formed of Mo and the upper and lower support layers 231 and 233 are formed of Cu, the bonding strengthening layers 221 and 223 are formed by plating Cu on the surface of Mo It helps to ensure smooth plating of Cu. For example, the bond strengthening layers 221 and 223 can perform the function of the seed layer in the plating process described above. However, the present invention is not limited thereto. The bonding strengthening layers 221 and 223 may include other materials than the material forming the base layer 210 and the supporting layers 231 and 233, or may be formed of other materials. For example, the bonding strengthening layers 221 and 223 may include Ni, be formed of Ni, or formed of a Ni-based alloy.

The upper protective layer 241 and the lower protective layer 243 are located at the upper portion of the upper support layer 231 and the lower portion of the lower support layer 233, respectively. The upper protective layer 241 and the lower protective layer 243 may protect the upper supporting layer 231 and the lower supporting layer 233, respectively. Specifically, the upper and lower protective layers 241 and 243 prevent the diffusion of external substances to the upper and lower support layers 231 and 233 and prevent the upper and lower support layers 231 and 233 from being oxidized . The upper protective layer 241 and the lower protective layer 243 may serve to facilitate the formation of the upper bonding layer 251 and the lower bonding layer 253.

The upper protective layer 241 and the lower protective layer 243 may include a conductive material having a relatively high thermal conductivity. For example, the upper protective layer 241 and the lower protective layer 243 may have a higher resistance to oxidation than Cu or Al, And may include or be formed of a metal having an excellent adhesion. For example, each of the upper protective layer 241 and the lower protective layer 243 may include Ni (nickel), Ni, and Ni-based alloy. Further, the upper and lower protective layers 241 and 243 may further include P, The upper protective layer 241 and the lower protective layer 243 may include the same material and may be formed of the same material.

The upper protective layer 241 and the lower protective layer 243 are thinner than the upper supporting layer 231 and the lower supporting layer 233, respectively. In addition, the upper protective layer 241 and the lower protective layer 243 may have substantially the same thickness. The top protective layer 241 and the bottom protective layer 243 may each have a thickness of about 1 占 퐉 to 4 占 퐉 and the top protective layer 241 and the bottom protective layer 243 may each have a thickness of about 2.4 占 퐉 Substantially the same thickness.

The upper bonding layer 251 and the lower bonding layer 253 are located at the upper portion of the upper protective layer 241 and the lower protective layer 243, respectively. The upper bonding layer 251 may serve to bond the conductive supporting substrate 200 to the light emitting structure including the nitride semiconductor and the lower bonding layer 253 may serve to bond the conductive supporting substrate 200 to a separate substrate For example, a substrate of a light emitting device). The upper bonding layer 251 and the lower bonding layer 253 are formed on the upper and lower protective layers 241 and 243, 233) can be prevented from being oxidized.

The upper bonding layer 251 and the lower bonding layer 253 may include a conductive material having a relatively high thermal conductivity. The upper bonding layer 251 and the lower bonding layer 253 may include a material having a superior bonding property between dissimilar materials and a relatively low electrical resistance. For example, the upper bonding layer 251 and the lower bonding layer 253 may each include Au, and may further include an alloy or a solid solution containing Au and Sn, an alloy including Au and In, Or a solid solution.

In addition, the upper bonding layer 251 and the lower bonding layer 253 may include the same material, and may be formed of the same material. Alternatively, in another embodiment as shown in FIG. 2, the upper bonding layer 251 and the lower bonding layer 253a may include different materials or may be formed of different materials. For example, the upper bonding layer 251 may be formed of an alloy or a solid solution including Au and Sn to bond the light emitting structure to the conductive supporting substrate 200, and the lower bonding layer 253a may be formed of Au, The lower surface of the conductive supporting substrate 200 can be prevented from being deformed in the process of bonding the supporting substrate 200 to another substrate of the light emitting device.

1, the upper bonding layer 251 and the lower bonding layer 253 are thinner than the upper protective layer 241 and the lower protective layer 243, respectively. In addition, the upper bonding layer 251 and the lower bonding layer 253 may have substantially the same thickness. The upper bonding layer 251 and the lower bonding layer 253 may each have a thickness of about 80 to 200 nm and further may have a thickness of about 140 to 180 nm.

Each layer of the conductive supporting substrate 200 according to this embodiment can be formed through a plating process. That is, the conductive supporting substrate 200 as described above may be provided by sequentially plating the respective layers on the upper and lower portions of the base layer 210. In the conductive supporting substrate 200 formed through such a plating process, the bonding strengthening layers 221 and 223 and the protective layers 241 and 243 can further facilitate the plating process. However, the present invention is not limited thereto, and each layer of the conductive supporting substrate 200 may be formed by bonding through a compression method using heat and pressure.

3 to 7 are cross-sectional views illustrating a light emitting device and a method of manufacturing the same according to another embodiment of the present invention. According to this embodiment, a method of manufacturing a vertical type light emitting device 100a using the above-described conductive supporting substrate 200 is disclosed, and a vertical type light emitting device 100a manufactured therefrom is disclosed.

First, referring to FIG. 3, a light emitting structure 120 is formed on a growth substrate 110.

The growth substrate 110 is not limited as long as it can grow the light emitting structure 120. For example, the growth substrate 110 may be a sapphire substrate, a patterned sapphire substrate (PSS), a silicon carbide substrate, a silicon substrate, Based substrate (e.g., a GaN substrate or an AlN substrate) including a nitride semiconductor such as In, N, or In.

The formation of the light emitting structure 120 may include forming the first conductivity type semiconductor layer 121, the active layer 123 and the second conductivity type semiconductor layer 125 on the growth substrate 110. The first conductivity type semiconductor layer 121, the active layer 123 and the second conductivity type semiconductor layer 125 may be formed of a metal organic chemical vapor deposition (MOCVD), a molecular beam epitaxy (MBE), a hydride vapor phase epitaxy (HVPE) May be grown on the growth substrate 110 using the technique of FIG.

The first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 125 may include a III-V compound semiconductor. For example, a nitride semiconductor such as (Al, Ga, In) . The first conductivity type semiconductor layer 121 may include an n-type impurity (for example, Si) and the second conductivity type semiconductor layer 125 may include a p-type impurity (for example, Mg) have. It may also be the opposite. Further, the first conductive semiconductor layer 121 and / or the second conductive semiconductor layer 125 may be a single layer or may include multiple layers. For example, the first conductive semiconductor layer 121 and / or the second conductive semiconductor layer 125 may include a cladding layer and a contact layer, and may include a superlattice layer. The active layer 123 may include a nitride semiconductor such as (Al, Ga, In) N, and its composition may be determined according to a peak wavelength of a desired light. In addition, the active layer 123 may comprise a multiple quantum well structure (MQW).

Referring to FIG. 4, a second electrode 130 is formed on the second conductive semiconductor layer 125.

The second electrode 130 may at least partly cover the upper surface of the second conductivity type semiconductor layer 125 and may be electrically connected to the second conductivity type semiconductor layer 125, 125 < / RTI > The second electrode 130 may be formed of a conductive material, and may include a conductive oxide and / or a metal.

The second electrode 130 may include a metal and may include a reflective layer 131 and a cover layer 133 covering the reflective layer 131. [ The reflective layer 131 may function to reflect light and may function as an electrode electrically connected to the second conductivity type semiconductor layer 125. Accordingly, the reflective layer 131 may include a metal having high reflectivity and capable of forming an ohmic contact with the second conductive semiconductor layer 125. For example, the reflective layer 131 may include at least one of Ni, Pt, Pd, Rh, W, Ti, Al, Ag and Au. Also, the reflective metal layer 131 may comprise a single layer or multiple layers. The cover layer 133 may cover the reflective layer 131. The cover layer 133 can prevent mutual diffusion between the reflective layer 131 and other materials and prevent other materials from diffusing to the reflective layer 131 to prevent the reflective layer 131 from being damaged. The cover layer 133 may be electrically connected to the second conductive semiconductor layer 125 together with the reflective layer 131 and may serve as an electrode together with the reflective layer 131. The cover layer 133 may comprise at least one of, for example, Al, Au, Ni, Ti, Pt, W and Cr, and may comprise a single layer or multiple layers.

As described above, the second electrode 130 may include a metal, and may be formed by depositing and / or plating a metal. When the second electrode 130 includes multiple layers, the second electrode 130 of a multi-layer structure can be provided by laminating the respective layers step by step.

In yet another embodiment, the second electrode 130 may comprise a conductive oxide such as ITO, ZnO, IZO, GZO, AZO, and the like. Furthermore, the second electrode 130 may further include a reflective layer (not shown) covering the conductive oxide. The reflective layer may be formed of a metallic material.

5, the conductive supporting substrate 200 is placed on the light emitting structure 120, and the light emitting structure 120 and the conductive supporting substrate 200 are bonded to each other.

The light emitting structure 120 and the conductive supporting substrate 200 may be bonded to each other through the upper bonding layer 251. Specifically, the upper bonding layer 251 and the second electrode 130 are bonded to each other, so that the light emitting structure 120 and the conductive supporting substrate 200 can be bonded to each other. In one embodiment, the upper bonding layer 251 may comprise an alloy or solid solution comprising Au and Sn, and may be deposited on the conductive support substrate 200 (e.g., via an eutectic bonding process using the upper bonding layer 251) And the light emitting structure 120 can be bonded to each other. For example, when the conductive supporting substrate 200 is placed on the light emitting structure 120, particularly the second electrode 130, and the temperature of the upper bonding layer 251 formed of an alloy or solid solution containing Au and Sn is changed to a eutectic An eutectic structure can be formed by heating to a temperature above the eutectic temperature (about 280 ° C) (for example, about 350 ° C) and then cooling the heated AuSn. Accordingly, the light emitting structure 120 can be bonded to the conductive supporting substrate 200.

Further, in some embodiments, an auxiliary bonding layer 251a may be further formed on the second electrode 130 before the conductive supporting substrate 200 is placed on the light emitting structure 120. [ The auxiliary bonding layer 251a may include Au, and may further include an alloy or a solid solution including Au and Sn, an alloy or a solid solution including Au and In. Further, the auxiliary bonding layer 251a may be formed of substantially the same material as the upper bonding layer 251. [ For example, the upper bonding layer 251 and the auxiliary bonding layer 251a may include an alloy or a solid solution containing Au and Sn, respectively. In this case, the conductive support substrate 200 is placed on the light emitting structure 120, particularly the auxiliary bonding layer 251a, and the temperature is raised to a temperature of about eutectic temperature (about 280 ° C) (for example, about 350 ° C) An eutectic structure can be formed through heating and then cooling again. Thus, the light emitting structure 120 can be bonded to the conductive supporting substrate 200. Alternatively, after the temperature of the upper bonding layer 251 and the auxiliary bonding layer 251a is raised to the eutectic temperature or higher, the conductive supporting substrate 200 is placed on the light emitting structure 120, and then the cooling process is performed It is possible.

Thus, by forming the auxiliary bonding layer 251a on the second electrode 130, the bonding process between the conductive supporting substrate 200 and the light emitting structure 120 can be performed more easily. Particularly, as the degree of roughness of the bonding interface is lower, eutectic bonding can provide better bonding characteristics, and thus, by further forming the auxiliary bonding layer 251a on the second electrode 130, The surface roughness can be reduced to improve the bonding properties.

In addition, in various embodiments, the light emitting structure 120 and the conductive supporting substrate 200 can be bonded using the upper bonding layer 251 formed of Au. When the upper bonding layer 251 is formed of Au, the light emitting structure 120 and the conductive supporting substrate 200 are bonded to each other by Au / Au bonding between the auxiliary bonding layer 251a formed of Au and the upper bonding layer 251 can do. For example, the upper bonding layer 251 formed of Au and the auxiliary bonding layer 251a formed of Au are brought into contact with each other, and further pressure is applied, and ultrasonic waves are applied to the upper bonding layer 251 and the auxiliary bonding layer 251a, Can be bonded. At this time, a heating process of applying heat to the upper bonding layer 251 and the auxiliary bonding layer 251a may be further performed. However, the present invention is not limited thereto.

As discussed above, such bonding processes include performing heating and cooling processes. Accordingly, stress due to a difference in thermal expansion coefficient between the light emitting structure 120, the growth substrate 110, and the conductive supporting substrate 200 can be generated. That is, due to the difference in thermal expansion coefficient, bouling may occur, and cracks may be generated in the light emitting structure 120 due to such bouling. However, according to embodiments of the present invention, the conductive support substrate 200 includes the base layer 210 and the upper and lower support layers 231 and 233 disposed at the upper and lower portions of the base layer 210, Warping or bending of the supporting substrate 200 can be minimized. Therefore, damage of the light emitting structure 120 due to deformation of the conductive supporting substrate 200 can be prevented. The conductive support substrate 200 is attached to the light emitting structure 120 so that the bending or bowing of the light emitting structure 120 due to the difference in thermal expansion coefficient between the light emitting structure 120 and the growth substrate 110 is also suppressed, Can be prevented or minimized.

Next, referring to FIG. 6, the growth substrate 110 is separated from the light emitting structure 120. FIGS. 6 and 7 illustrate the top and bottom of the light emitting structure 120 opposite to FIGS. 3 to 5.

The growth substrate 110 may be removed by various methods, such as, for example, laser lift-off, chemical lift-off, or stress lift-off. In one embodiment, the growth substrate 110 may be a patterned sapphire substrate and the separation of the growth substrate 110 from the light emitting structure 120 may be performed in a direction from the growth substrate 110 side to the light emitting structure 120 Lt; RTI ID = 0.0 > KrF < / RTI > excimer laser. Accordingly, the growth substrate 110 and the light emitting structure 120 can be separated from each other by deterioration of the nitride-based semiconductor located between the light emitting structure 120 and the growth substrate 110.

In other embodiments, additional layers may be further interposed between the light emitting structure 120 and the growth substrate 110, depending on how the growth substrate 110 is removed. For example, when the growth substrate 110 is a nitride-based substrate of the same kind as the light emitting structure 120, a sacrificial layer (not shown) may be interposed between the growth substrate 110 and the light emitting structure 120. At this time, a part of the sacrificial layer may be chemically removed to separate the growth substrate 110 from the light emitting structure 120, or the growth substrate 110 may be separated from the light emitting structure 120 by applying stress to the sacrificial layer. It is possible. However, the present invention is not limited thereto.

Since the thickness of the growth substrate 110 is very thick compared to the thickness of the light emitting structure 120, the possibility of cracking the light emitting structure 120 in the process of separating the growth substrate 110 from the light emitting structure 120 have. This is caused by stress applied to the light emitting structure 120 by the stress buffered by the growth substrate 110, and cracks may be generated in the light emitting structure 120 due to warping or bending of a general supporting substrate. In contrast, according to embodiments of the present invention, since the light emitting structure 120 is bonded to and supported on the conductive supporting substrate 200 having minimized warping and bouling, even if the growth substrate 110 is separated from the light emitting structure 120, The occurrence of cracks in the structure 120 can be prevented.

Referring to FIG. 7, a first electrode pad 160 electrically connected to the exposed first conductive semiconductor layer 121 is formed. Accordingly, the light emitting device 100a as shown in Fig. 7 can be provided. The first electrode pad 160 may be formed on the first conductivity type semiconductor layer 121 by plating or vapor deposition. Further, the roughness 121R may be further formed on the upper surface of the first conductive semiconductor layer 121 before the first electrode pad 160 is formed. The formation of the roughness 121R may include performing a wet and / or dry etch, for example, a photo-enhanced chemical (PEC) etch.

The light emitting device 100a according to the present embodiment includes a conductive supporting substrate 200 and a light emitting structure 120 disposed on the conductive supporting substrate 200. Further, the light emitting device 100a may further include a second electrode 130, a first electrode pad 160, and an auxiliary bonding layer 251a. The conductive support substrate 200 may serve as an electrode pad electrically connected to the second electrode 130. Since the conductive supporting substrate 200 is formed over the entire surface of the light emitting device, the heat generated when the light emitting device is driven can be effectively conducted to the secondary substrate. Therefore, the light emitting device according to an embodiment of the present invention can effectively emit heat even when driven by a high current, and thus the reliability is excellent. As described above, since the cracks and damage of the light emitting structure 120 that may occur in the process of joining the conductive supporting substrate 200 and the process of separating the growth substrate 110 are minimized, the light emitting structure 120, A light emitting device having excellent reliability and light emitting efficiency can be provided.

8 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention. The light emitting device of FIG. 8 may include the conductive supporting substrate 200 and the light emitting device 100a according to the above-described embodiments, and detailed description of the same components as those described in the above embodiments will be omitted .

The light emitting device includes a substrate 300a and a light emitting device 100a disposed on the substrate 300a. The light emitting device may further include a wiring 350 electrically connecting the light emitting device 100a and the substrate 300a.

The substrate 300a may include an insulating substrate 310, a first lead 320 and a second lead 330. The substrate 300a may further include a heat dissipating lead 340. [ The insulating substrate 310 may include an upper insulating substrate 311 and a lower insulating substrate 313. The first lead 320 includes a first upper conductive pattern 321, a first upper via 322, a first intermediate conductive pattern 323, a first lower via 324, and a first lower conductive pattern 325 Second via 332, second intermediate conductive pattern 333, second lower via 334, and second via 336. Similarly, second lead 330 may include second upper conductive pattern 331, second upper via 332, 2 lower conductive pattern 335, as shown in FIG. The heat dissipation lead 340 may include an upper heat dissipation pattern 341, a heat dissipation via 342, and a lower heat dissipation pattern 343.

The upper insulating substrate 311 and the lower insulating substrate 313 may be stacked vertically. The upper insulating substrate 311 and the lower insulating substrate 313 may include an insulating material, and may include a material having a high thermal conductivity. For example, a high thermal conductive polymer material and / or a ceramic material.

The first upper conductive pattern 321 and the second upper conductive pattern 331 may be spaced apart from each other on the upper insulating substrate 311. At least one of the first and second upper conductive patterns 321 and 331 may provide a region in which the light emitting device 100a is mounted. The first and second upper conductive patterns 321 and 331 may be electrically connected to the first conductive semiconductor layer 121 and the second conductive semiconductor layer 125 of the light emitting device 100a, respectively. The first upper conductive pattern 321 is electrically connected to the first electrode pad 160 through the wiring 350 and the second upper conductive pattern 331 is electrically connected to the conductive And may be electrically connected to the supporting substrate 200. Meanwhile, an insulating material may be further formed in the spaced region between the first and second upper conductive patterns 321 and 331.

The light emitting device 100a may be bonded to the substrate 300a through the lower bonding layer 253 of the conductive supporting substrate 200 and may be electrically connected to the second upper conductive pattern 331. [ In one embodiment, the temperature of the lower bonding layer 253 formed of an alloy or solid solution containing Au and Sn is heated to a temperature of about eutectic temperature (about 280 ° C) (for example, about 350 ° C) By cooling the heated AuSn, the light emitting device 100a can be bonded to the substrate 300a. The bonding between the light emitting device 100a and the substrate 300a of the light emitting device can be easily performed through the conductive supporting substrate 200 including the lower bonding layer 253. That is, since the light emitting device 100a can be mounted on the substrate 300a through the heating and cooling process by positioning the light emitting device 100a on the substrate 300a, the manufacturing process of the light emitting device can be simplified . The light emitting device 100a and the substrate 300a are brought into contact with each other through the lower bonding layer 253 including Au so that the electrical path path between the second upper conductive pattern 331 and the conductive supporting substrate 200 is formed. The light emitting efficiency can be improved. Further, since the light emitting device 100a and the substrate 300a are in contact with each other through the lower bonding layer 253 including Au, the efficiency of heat emission of the light emitting device 100a through the conductive supporting substrate 200 is improved, A reliable high power light emitting device can be provided.

Further, in another embodiment, the lower bonding layer 253 may be formed of Au, and in this case, an additional auxiliary bonding layer (not shown) may be interposed between the lower bonding layer 253 and the light emitting element 100a It is possible. The auxiliary bonding layer may include an alloy or a solid solution including Au and Sn. The auxiliary bonding layer may be formed on at least one of the first and second upper conductive patterns 321 and 331.

In addition, in various embodiments, the light emitting device 100a and the substrate 300a can be bonded using the lower bonding layer 253 formed of Au. When the lower bonding layer 253 is formed of Au, the light emitting element 100a and the substrate 300a are bonded to each other by Au / Au bonding between an auxiliary bonding layer (not shown) formed of Au and the lower bonding layer 253 . For example, the lower bonding layer 253 formed of Au and the auxiliary bonding layer formed of Au may be brought into contact with each other, and additional pressure may be applied to apply the ultrasonic waves to the lower bonding layer 253 and the auxiliary bonding layer. At this time, a heating process of applying heat to the lower bonding layer 253 and the auxiliary bonding layer may be further performed. However, the present invention is not limited thereto.

The first intermediate conductive pattern 323 and the second intermediate conductive pattern 333 may be located under the upper insulating substrate 311 and thus the upper insulating substrate 311 and the lower insulating substrate 313 may be interposed . The first intermediate conductive pattern 323 and the second intermediate conductive pattern 333 are electrically connected through the first upper via 322 and the second upper via 332 penetrating the upper insulating substrate 311, And is electrically connected to the first upper conductive pattern 321 and the second upper conductive pattern 331.

An upper heat radiation pattern 341 may be disposed between the upper insulating substrate 311 and the lower insulating substrate 313. The upper heat radiation pattern 341 may be electrically isolated from the first intermediate conductive pattern 323 and the second intermediate conductive pattern 333. An insulating material may further be formed in a region where the upper heat radiation pattern 341, the first intermediate conductive pattern 323, and the second intermediate conductive pattern 333 are spaced apart from each other. Further, the upper heat radiation pattern 341 may be located between the first and second intermediate conductive patterns 323 and 333.

Particularly, the upper heat radiation pattern 341 may be positioned below the light emitting device 100a, so that heat generated during the operation of the light emitting device 100a is efficiently conducted to the upper heat radiation pattern 341, The emission efficiency can be improved.

The first lower conductive pattern 325 and the second lower conductive pattern 335 may be located under the lower insulating substrate 313. [ The first lower conductive pattern 325 and the second lower conductive pattern 335 are electrically connected to the first intermediate conductive pattern 334 through the first lower via 324 and the second lower via 334, The first intermediate conductive pattern 323 and the second intermediate conductive pattern 333.

The first lower conductive pattern 325 and the second lower conductive pattern 335 are electrically connected to the first upper conductive pattern 321 and the second upper conductive pattern 331, respectively. For example, when the light emitting device is mounted on an additional substrate (e.g., a printed circuit board) or the like, the first lower conductive pattern 325 and the second lower conductive pattern 335 are connected to an external power source, As shown in FIG.

The lower heat dissipation pattern 343 may be positioned on the lower surface of the lower insulation substrate 313. The lower heat radiation pattern 343 may be electrically isolated from the first lower conductive pattern 325 and the second lower conductive pattern 335. The lower heat dissipation pattern 343 can be connected to the upper heat dissipation pattern 341 through the heat dissipation via 342 so that the heat conducted to the upper heat dissipation pattern 341 passes through the heat dissipation via 342, 343 < / RTI > In particular, the heat dissipation vias 342 may be arranged to penetrate the lower insulating substrate 313 in the vertical direction, and the lower heat dissipation patterns 343 may be positioned below the upper heat dissipation patterns 341. Also, the lower heat radiation pattern 343 may be located between the first and second lower conductive patterns 325 and 335.

The heat dissipating lead 340 may have a role similar to that of the heat sink and thus effectively emit heat generated during the operation of the light emitting device 100a. For example, when the light emitting device is mounted on an additional substrate (e.g., a printed circuit board) or the like, the heat dissipating lid 340, particularly the lower heat dissipating pattern 343, may be connected to the heat dissipating member of the additional substrate.

The first and second leads 320 and 330 may be formed of a material having excellent electrical conductivity and may be formed of a material such as Ni, Pt, Pd, Rh, W, Ti, Al, Ag, And may be formed by vapor deposition and / or plating of a metal material. In particular, the first and second upper conductive patterns 321 and 331 may include a highly reflective material in addition to the electrical conductivity, and may include, for example, Au, Al, Ag, and the like. The heat dissipating lead 340 may include a material having high thermal conductivity, and may include a metal material such as W, Au, or the like. However, the present invention is not limited thereto.

9A to 18B are plan and sectional views for explaining a light emitting device and a method of manufacturing the same according to another embodiment of the present invention. In each of the figures, the corresponding cross-sectional view shows a cross-section of the portion corresponding to A-A 'in the corresponding plan view. For example, the cross section of the portion corresponding to A-A 'in the plan view of Fig. 9A is shown in Fig. 9B. Hereinafter, a method of manufacturing the light emitting device 100b of the present embodiment will be described with reference to FIGS. 9A to 18B, and the light emitting device 100b of this embodiment will be described with reference to FIG. 18B. A detailed description of the substantially same components as those described in the above embodiments will be omitted, and the following description will focus on the light emitting device 100b of this embodiment mainly on the differences.

Referring to FIGS. 9A and 9B, a light emitting structure 120 is formed on a growth substrate 110, and forming the light emitting structure 120 includes forming at least one hole 127.

At least one hole 127 may be formed by patterning the light emitting structure 120 using photolithography and etching techniques and the at least one hole 127 may be formed by patterning the second conductive semiconductor layer 125 and the active layer 123, The first conductivity type semiconductor layer 121 may be partially exposed. The side surfaces of the second conductivity type semiconductor layer 125, the side surfaces of the active layer 123, and the top surface of the first conductivity type semiconductor layer 121 may be partially exposed in the at least one hole 127. The side 127s of the at least one hole 127 may have an inclination and the angle of inclination of the side 127s of the at least one hole 127 may be less than 90 占 as shown.

At least one hole 127 may be formed as a plurality of holes as shown, and may be arranged in the light emitting structure 120 in various forms. As shown in the figure, the plurality of holes 127 may be formed to have a constant pitch interval in a dot shape, or alternatively, a plurality of stripe shapes or a mixture of a dot shape and a stripe shape may be formed. When a plurality of holes 127 are formed, a plurality of holes 127 may be formed over the entire surface of the light emitting structure 120. Accordingly, as described later, the current dispersion efficiency can be improved when the light emitting device 100b is driven.

Referring to FIGS. 10A and 11B, a second electrode 130 is formed on the second conductive semiconductor layer 125. The formation of the second electrode 130 may include forming a reflective layer 131 and forming a cover layer 133 covering the reflective layer 131.

First, referring to FIGS. 10A and 10B, a reflective layer 131 that partially covers the upper surface of the second conductivity type semiconductor layer 125 is formed. The reflective layer 131 may be formed to have a predetermined pattern through a deposition and a lift-off process. The reflective layer 131 may include an opening for exposing at least one hole 127 and may include an exposed region 131a for partially exposing an upper surface of the light emitting structure 120. [ The exposed region 131a may correspond to a portion including a region where the second electrode pad 170 is formed, which will be described later.

Next, referring to FIGS. 11A and 11B, the cover layer 133 may cover the reflection layer 131. FIG. The cover layer 133 may be integrally formed over the entire upper surface of the light emitting structure 120 and may include at least one opening located in a region corresponding to the at least one hole 127. [ The cover layer 133 may be formed on the exposed region 131a where the reflective layer 131 is not formed on the upper surface of the second conductivity type semiconductor layer 125. [ The second electrode pad 180 may be formed at a portion corresponding to the exposed region 131a where the reflective layer 131 is not formed and only the cover layer 133 is formed.

The order of FIGS. 9A to 11B is not limited, and at least one hole 127 may be formed after the second electrode 130 is formed first. In addition, when the second electrode 130 includes a conductive oxide, the conductive oxide may be formed through a deposition process.

12A and 12B, an insulating layer 140 covering the second electrode 130 and the at least one hole 127 may be formed on the light emitting structure 120. Referring to FIG. In particular, the insulating layer 140 may fill at least one hole 127 and cover the side of the hole 127. The insulating layer 140 may include SiN x, SiO 2 , or the like, and may be formed using, for example, electron beam deposition or other known deposition techniques. The insulating layer 140 may be formed of multiple layers, for example, a distributed Bragg reflector in which dielectric layers having different refractive indexes are stacked. When the insulating layer 140 includes a distributed Bragg reflector, light directed toward an area not covered by the second electrode 130 can be reflected, and the luminous efficiency of the luminous means can be further improved. In particular, when the second electrode 130 includes a conductive oxide, light can be reflected toward the first conductive type semiconductor layer 121 through the distributed Bragg reflector of the insulating layer 140.

Next, referring to FIGS. 13A to 14B, a first electrode 150, which is located on the light emitting structure 120 and is electrically connected to the first conductive semiconductor layer 121, is formed. The first electrode 150 may be formed by partially removing the insulating layer 140 to expose at least one opening portion of the first conductive semiconductor layer 121 in the region corresponding to the at least one hole 127 140a and filling the opening and forming the first electrode 140 covering the insulating layer 140.

Specifically, referring to FIGS. 13A and 13B, the insulating layer 140 is patterned to form at least one opening 140a. At least one opening 140a may partially expose the first conductive type semiconductor layer 121 exposed in the at least one hole 127. [ At this time, the width of at least one opening 140a may be smaller than the width of at least one hole 127. Thus, at least one side of the hole 127 is covered with the insulating layer 140. [ Thus, the side surfaces of the first electrode 150, the second conductivity type semiconductor layer 125, and the active layer 123 can be prevented from being electrically connected. When a plurality of holes 127 are formed on the entire surface of the light emitting structure 120, the first electrode 150 is evenly contacted with the first conductivity type semiconductor layer 121 as a whole. Thus, the current dispersion efficiency of the light emitting element can be improved.

Referring to FIGS. 14A and 14B, the first electrode 150 is formed to cover the insulating layer 140 and ohmic contact with the first conductive semiconductor layer 121 through at least one groove 140a. A portion of the first electrode 150 that fills at least one opening 140a of the insulating layer 140 and a portion of the first electrode 150 that covers the upper surface of the insulating layer 140 may be formed separately or may be integrally formed through a single process It is possible. In this case, if the portion of the first electrode 150 that fills at least one opening 140a and the portion of the first electrode 150 that covers the upper surface of the insulating layer 140 are separately formed, they may include different materials.

 At least one opening 140a of the insulating layer 140 may be formed through a photolithography and etching process and the first electrode 140 may be formed using a deposition and lift-off technique.

Next, referring to FIGS. 15A and 15B, a conductive supporting substrate 200 is formed on the light emitting structure 120. Also, the conductive supporting substrate 200 may be bonded to the light emitting structure 120.

The light emitting structure 120 and the conductive supporting substrate 200 may be bonded to each other through the upper bonding layer 251. Specifically, the upper bonding layer 251 and the second electrode 130 are bonded to each other, so that the light emitting structure 120 and the conductive supporting substrate 200 can be bonded to each other. In one embodiment, the upper bonding layer 251 may comprise an alloy or solid solution comprising Au and Sn, and may be bonded to the conductive support substrate 200 (e.g., via an eutectic bonding process using the upper bonding layer 251) And the light emitting structure 120 can be bonded to each other. For example, when the conductive supporting substrate 200 is placed on the light emitting structure 120, particularly the first electrode 150, and the temperature of the upper bonding layer 251 formed of an alloy or solid solution containing Au and Sn is changed to a eutectic The light emitting structure 120 may be bonded to the conductive supporting substrate 200 by heating the heated AuSn to a temperature of about 280 ° C or more (for example, about 350 ° C).

Further, in some embodiments, an auxiliary bonding layer 251a may be further formed on the first electrode 150 before the conductive supporting substrate 200 is placed on the light emitting structure 120. [ The auxiliary bonding layer 251a may include Au, and may further include an alloy or a solid solution including Au and Sn, an alloy or a solid solution including Au and In. Further, the auxiliary bonding layer 251a may be formed of substantially the same material as the upper bonding layer 251. [ For example, the upper bonding layer 251 and the auxiliary bonding layer 251a may include an alloy or a solid solution containing Au and Sn, respectively. In this case, the conductive support substrate 200 is placed on the light emitting structure 120, particularly the auxiliary bonding layer 251a, and the temperature is raised to a temperature of about eutectic temperature (about 280 ° C) (for example, about 350 ° C) The light emitting structure 120 may be bonded to the conductive supporting substrate 200 through a process of heating and then cooling again. Alternatively, after the temperature of the upper bonding layer 251 and the auxiliary bonding layer 251a is raised to the eutectic temperature or higher, the conductive supporting substrate 200 is placed on the light emitting structure 120, and then the cooling process is performed It is possible.

In addition, in various embodiments, the light emitting structure 120 and the conductive supporting substrate 200 can be bonded using the upper bonding layer 251 formed of Au. When the upper bonding layer 251 is formed of Au, the light emitting structure 120 and the conductive supporting substrate 200 are bonded to each other by Au / Au bonding between the auxiliary bonding layer 251a formed of Au and the upper bonding layer 251 can do. For example, the upper bonding layer 251 formed of Au and the auxiliary bonding layer 251a formed of Au are brought into contact with each other, and further pressure is applied, and ultrasonic waves are applied to the upper bonding layer 251 and the auxiliary bonding layer 251a, Can be bonded. At this time, a heating process of applying heat to the upper bonding layer 251 and the auxiliary bonding layer 251a may be further performed. However, the present invention is not limited thereto.

Thus, by forming the auxiliary bonding layer 251a on the first electrode 150, the bonding process between the conductive supporting substrate 200 and the light emitting structure 120 can be performed more easily. Particularly, eutectic bonding can provide a better bonding property as the degree of roughness of the bonding interface is lower, so that the auxiliary bonding layer 251a is further formed on the first electrode 150, The surface roughness can be reduced to improve the bonding properties.

By manufacturing the light emitting device 100b using the conductive supporting substrate 200 according to the embodiments of the present invention as in the present embodiment, it is possible to manufacture the light emitting device 100 easily by preventing the bending or bowing of the light emitting structure 120 A high output light emitting device 100b having high reliability and excellent heat dissipation efficiency can be provided.

Next, referring to FIGS. 16A and 16B, the growth substrate 110 is separated from the light emitting structure 120. The growth substrate 110 may be removed by various methods, such as, for example, laser lift-off, chemical lift-off, or stress lift-off. Also in this embodiment, cracking and damage of the light emitting structure 120, which may occur in the growth substrate 110 separation process, can be effectively prevented.

17A and 17B, the light emitting structure 120 may be partially removed to form a portion of the second electrode 130, specifically, the region 120a in which the cover layer 133 is exposed. Further, the growth substrate 110 may be separated from the light emitting structure 120 to form the roughness 121a on the exposed surface. The region 120a in which the cover layer 133 is exposed may be formed through a photolithography and etching process. As described above, the reflective layer 131 is not exposed to the exposed portion of the second electrode 130, but only the cover layer 133 is exposed. Therefore, it is possible to prevent the reflection layer 131 from being exposed to the outside and the reflection characteristic being lowered due to diffusion.

Referring to FIGS. 18A and 18B, a second electrode 180 is formed on the exposed region 120a of the reflective metal layer 130. FIG. The second electrode 180 may be formed using a deposition and lift-off technique and is in electrical contact with the reflective metal layer 130. Thus, a light emitting device 100b as shown in Fig. 18B is provided.

The light emitting device 100b according to the present embodiment includes a conductive supporting substrate 200 and a light emitting structure 120 disposed on the conductive supporting substrate 200. Further, the light emitting device 100b may further include a second electrode 130, a first electrode 150, an insulating layer 140, a second electrode pad 170, and an auxiliary bonding layer 251a . The conductive support substrate 200 may serve as an electrode pad electrically connected to the first electrode 150. Since the conductive supporting substrate 200 is formed over the entire surface of the light emitting device, the heat generated when the light emitting device is driven can be effectively conducted to the secondary substrate. Therefore, the light emitting device according to an embodiment of the present invention can effectively emit heat even when driven by a high current, and thus the reliability is excellent. As described above, since the cracks and damage of the light emitting structure 120 that may occur in the process of joining the conductive supporting substrate 200 and the process of separating the growth substrate 110 are minimized, the light emitting structure 120, A light emitting device having excellent reliability and light emitting efficiency can be provided.

19 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention. The light emitting device of FIG. 19 may include the conductive supporting substrate 200 and the light emitting device 100b according to the above-described embodiments, and detailed description of the same components as those described in the above embodiments will be omitted .

The light emitting device includes a substrate 300b and a light emitting device 100b located on the substrate 300b. The light emitting device may further include a wiring 360 electrically connecting the light emitting device 100b and the substrate 300b. The light emitting device of this embodiment is different from the light emitting device of Fig. 8 in that the first and second leads 320 and 330 are arranged opposite to each other and that the light emitting element 100b is mounted on the first lead 320 There is a difference.

The second upper conductive pattern 331 is electrically connected to the second electrode pad 170 through the wiring 360 and the first upper conductive pattern 321 is electrically connected to the light emitting element 100b, The conductive support substrate 200 may be electrically connected to the conductive support substrate 200. The light emitting device 100b may be bonded to the substrate 300b through the lower bonding layer 253 of the conductive supporting substrate 200. In this case, Accordingly, the manufacturing process of the light emitting device can be simplified, the heat emission efficiency is improved, and a high reliability high output light emitting device can be provided.

20 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.

Referring to FIG. 20, the illumination device according to the present embodiment includes a diffusion cover 1010, a light emitting device module 1020, and a body part 1030. The body 1030 may receive the light emitting module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the light emitting module 1020.

The body part 1030 is not limited as long as it can receive and support the light emitting element module 1020 and supply the electric power to the light emitting element module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [

The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the light emitting device module 1020, and may include at least one IC chip. The IC chip may control, convert, or control the characteristics of the power supplied to the light emitting device module 1020. The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 . The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 1037 is electrically connected to the power supply unit 1033 in the power supply case 1035 so that external power can be supplied to the power supply unit 1033.

The light emitting element module 1020 includes a substrate 1023 and a light emitting element 1021 disposed on the substrate 1023. The light emitting device module 1020 is provided on the body case 1031 and can be electrically connected to the power supply device 1033.

The substrate 1023 is not limited as long as it is a substrate capable of supporting the light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [ The light emitting device 1021 may include at least one of the light emitting device and / or the light emitting device according to the embodiments of the present invention described above.

The diffusion cover 1010 is disposed on the light emitting element 1021 and may be fixed to the body case 1031 to cover the light emitting element 1021. [ The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.

21 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.

The display device of this embodiment includes a display panel 2110, a backlight unit for providing light to the display panel 2110, and a panel guide for supporting the lower edge of the display panel 2110.

The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate.

The backlight unit includes a light source module including at least one substrate and a plurality of light emitting elements (2160). Furthermore, the backlight unit may further include a bottom cover 2180, a reflective sheet 2170, a diffusion plate 2131, and optical sheets 2130.

The bottom cover 2180 may open upward to accommodate the substrate, the light emitting element 2160, the reflective sheet 2170, the diffusion plate 2131, and the optical sheets 2130. Further, the bottom cover 2180 can be engaged with the panel guide. The substrate may be disposed below the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface. In addition, the substrate may be formed in a plurality, and the plurality of substrates may be arranged in a side-by-side manner, but not limited thereto, and may be formed of a single substrate.

The light emitting device 2160 may include at least one of the light emitting devices and / or the light emitting devices according to the embodiments of the present invention described above. The light emitting elements 2160 may be regularly arranged in a predetermined pattern on the substrate. In addition, a lens 2210 is disposed on each light emitting element 2160, so that the uniformity of light emitted from the plurality of light emitting elements 2160 can be improved.

The diffusion plate 2131 and the optical sheets 2130 are placed on the light emitting element 2160. The light emitted from the light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.

22 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment is applied to a display device.

The display device including the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit disposed on the back surface of the display panel 3210 and configured to emit light. The display device further includes a frame 240 supporting the display panel 3210 and receiving the backlight unit and covers 3240 and 3280 surrounding the display panel 3210.

The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate. The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit.

The backlight unit for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the top surface, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 that converts light into light. The backlight unit of the present embodiment includes optical sheets 3230 positioned on the light guide plate 3250 and diffusing and condensing light, light directed downward of the light guide plate 3250 disposed below the light guide plate 3250 And a reflective sheet 3260 that reflects light toward the display panel 3210. [

The light source module includes a substrate 3220 and a plurality of light emitting devices 3110 disposed on a surface of the substrate 3220 at predetermined intervals. The substrate 3220 is not limited as long as it supports the light emitting element 3110 and is electrically connected to the light emitting element 3110, for example, it may be a printed circuit board. The light emitting device 3110 may include at least one of the light emitting device and / or the light emitting device according to the embodiments of the present invention described above. The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. Through the light guide plate 3250 and the optical sheets 3230, the point light source emitted from the light emitting elements 3110 can be transformed into a surface light source.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the edge display device as in the present embodiment.

23 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

23, the head lamp includes a lamp body 4070, a substrate 4020, a light emitting element 4010, and a cover lens 4050. Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.

Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070. The substrate 4020 is not limited as long as it can support the light emitting element 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [ Also, the light emitting device 4010 may be electrically connected to an external power source through the conductive pattern of the substrate 4020. The light emitting device 4010 may include at least one of the light emitting devices and / or the light emitting devices according to the embodiments of the present invention described above.

The cover lens 4050 is located on the path through which light emitted from the light emitting element 4010 travels. For example, as shown, the cover lens 4050 may be disposed apart from the light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is to be emitted from the light emitting device 4010 . The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted. The connecting member 4040 may serve as a light guide for fixing the cover lens 4050 to the substrate 4020 and for arranging the light emitting element 4010 to provide the light emitting path 4045. [ At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate heat generated when the light emitting device 4010 is driven.

As described above, the light emitting device according to the embodiments of the present invention can be applied to a head lamp as in the present embodiment, particularly, a headlamp for a vehicle.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Variations and changes are possible.

Claims (23)

A conductive support substrate; And
A first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the light emitting structure is disposed on the conductive supporting substrate, Including,
Wherein one of the first and second conductive type semiconductor layers is electrically connected to the conductive supporting substrate,
The conductive support substrate may be formed of a metal,
A base layer having a first thermal expansion coefficient;
An upper support layer and a lower support layer respectively located at upper and lower portions of the base layer and having a second thermal expansion coefficient greater than the first thermal expansion coefficient;
An upper protective layer and a lower protective layer respectively located on an upper portion of the upper support layer and a lower portion of the lower support layer; And
And an upper bonding layer and a lower bonding layer respectively located on the upper portion of the upper protective layer and the lower portion of the lower protective layer,
Wherein the upper support layer and the lower support layer comprise the same material and the upper and lower protective layers comprise the same material,
Wherein the light emitting structure is bonded to the conductive supporting substrate by the upper bonding layer.
The method according to claim 1,
Wherein the upper support layer and the lower support layer have a thickness thinner than the base layer.
The method of claim 2,
Wherein the upper support layer and the lower support layer have the same thickness.
The method according to claim 1,
Wherein the upper protective layer is thinner than the upper supporting layer and the lower protective layer is thinner than the lower supporting layer.
The method of claim 4,
Wherein the upper protective layer and the lower protective layer have the same thickness.
The method according to claim 1,
Wherein the upper bonding layer and the lower bonding layer comprise Au and are formed of the same material.
The method according to claim 1,
Wherein the upper bonding layer and the lower bonding layer are formed of different materials, and the upper bonding layer includes at least one of an alloy or a solid solution including Au and Sn, an alloy or a solid solution including In and Au, Wherein the layer comprises Au.
The method according to claim 1,
Wherein the base layer comprises Mo and the upper support layer and the lower support layer comprise Cu.
The method according to claim 1,
Wherein the upper protective layer and the lower protective layer comprise Ni.
The method according to claim 1,
And a bonding strengthening layer interposed between the base layer and the upper support layer and between the base layer and the lower support layer.
The method according to claim 1,
The second conductivity type semiconductor layer is formed on a lower surface of the light emitting structure located below the first conductivity type semiconductor layer, and at least one hole in which the first conductivity type semiconductor layer is partially exposed;
A second electrode located at least below the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer;
An insulating layer partially covering the lower surface of the second electrode and the light emitting structure, and including at least one opening corresponding to the at least one hole; And
Further comprising a first electrode electrically connected to the first conductive type semiconductor layer exposed in the at least one hole through the opening of the insulating layer and at least partially covering the lower surface of the insulating layer,
Wherein the first electrode and the conductive supporting substrate are bonded to each other through the upper bonding layer.
The method of claim 11,
And a second electrode pad electrically connected to the second electrode,
A portion of the second electrode extends from a side surface of the light emitting structure,
Wherein the second electrode pad is located on a portion of the second electrode exposed.
The method of claim 12,
Wherein the second electrode comprises a reflective layer and a cover layer covering the reflective layer,
Wherein the partially exposed portion of the second electrode is a part of the cover layer.
The method of claim 11,
Further comprising an auxiliary bonding layer interposed between the first electrode and the upper bonding layer,
Wherein the auxiliary bonding layer is formed of the same material as the upper bonding layer.
15. The method of claim 14,
Wherein the auxiliary bonding layer and the upper bonding layer comprise AuSn having an eutectic structure.
15. The method of claim 14,
Wherein the auxiliary bonding layer and the upper bonding layer are formed of Au and are bonded to each other.
The method according to claim 1,
The second conductivity type semiconductor layer further includes a second electrode located below the light emitting structure located below the first conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer,
And the second electrode and the conductive supporting substrate are bonded to each other through the upper bonding layer.
18. The method of claim 17,
Further comprising an auxiliary bonding layer interposed between the first electrode and the upper bonding layer,
Wherein the auxiliary bonding layer is formed of the same material as the upper bonding layer.
19. The method of claim 18,
Wherein the auxiliary bonding layer and the upper bonding layer comprise AuSn having an eutectic structure.
19. The method of claim 18,
Wherein the auxiliary bonding layer and the upper bonding layer are formed of Au and are bonded to each other.
Board; And
And a light emitting element located on the substrate,
The light-
A conductive support substrate; And
A first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the light emitting structure is disposed on the conductive supporting substrate, Including,
Wherein one of the first and second conductive type semiconductor layers is electrically connected to the conductive supporting substrate,
The conductive support substrate may be formed of a metal,
A base layer having a first thermal expansion coefficient;
An upper support layer and a lower support layer respectively located at upper and lower portions of the base layer and having a second thermal expansion coefficient greater than the first thermal expansion coefficient;
An upper protective layer and a lower protective layer respectively located on an upper portion of the upper support layer and a lower portion of the lower support layer; And
And an upper bonding layer and a lower bonding layer respectively located on the upper portion of the upper protective layer and the lower portion of the lower protective layer,
Wherein the upper support layer and the lower support layer comprise the same material and the upper and lower protective layers comprise the same material,
The light emitting structure is bonded to the conductive supporting substrate by the upper bonding layer,
And the light emitting element is bonded to the substrate by the lower bonding layer.
23. The method of claim 21,
Wherein the upper bonding layer and the lower bonding layer are formed of different materials, and the upper bonding layer includes at least one of an alloy or a solid solution including Au and Sn, an alloy or a solid solution including In and Au, Wherein the layer comprises Au.
23. The method of claim 21,
Further comprising an auxiliary bonding layer positioned between the substrate and the lower bonding layer,
Wherein the lower bonding layer and the auxiliary bonding layer are formed of Au, and are bonded to each other.
KR1020150132884A 2015-09-21 2015-09-21 Conductive support substrate, light emitting device and light emitting apparatus including the same KR20170034522A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10892314B2 (en) 2018-07-20 2021-01-12 Lg Display Co., Ltd. Stretchable display device
US10943893B2 (en) 2018-08-08 2021-03-09 Lg Display Co., Ltd. Stretchable display device
US10964234B2 (en) 2018-10-08 2021-03-30 Lg Display Co., Ltd. Stretchable display panel and device and manufacturing method of the same
US11271179B2 (en) 2018-07-20 2022-03-08 Lg Display Co., Ltd. Stretchable display device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10892314B2 (en) 2018-07-20 2021-01-12 Lg Display Co., Ltd. Stretchable display device
US11271179B2 (en) 2018-07-20 2022-03-08 Lg Display Co., Ltd. Stretchable display device
US11348990B2 (en) 2018-07-20 2022-05-31 Lg Display Co., Ltd. Stretchable display device
US10943893B2 (en) 2018-08-08 2021-03-09 Lg Display Co., Ltd. Stretchable display device
US11574899B2 (en) 2018-08-08 2023-02-07 Lg Display Co., Ltd. Stretchable display device
US10964234B2 (en) 2018-10-08 2021-03-30 Lg Display Co., Ltd. Stretchable display panel and device and manufacturing method of the same

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