KR20170026812A - A electrochromic window further comprising interfacial layer between electrochromic material layer and electrode - Google Patents
A electrochromic window further comprising interfacial layer between electrochromic material layer and electrode Download PDFInfo
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- KR20170026812A KR20170026812A KR1020150121815A KR20150121815A KR20170026812A KR 20170026812 A KR20170026812 A KR 20170026812A KR 1020150121815 A KR1020150121815 A KR 1020150121815A KR 20150121815 A KR20150121815 A KR 20150121815A KR 20170026812 A KR20170026812 A KR 20170026812A
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- 238000000034 method Methods 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000004040 coloring Methods 0.000 claims abstract description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 53
- 239000010409 thin film Substances 0.000 claims description 43
- 238000000231 atomic layer deposition Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000010416 ion conductor Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 2
- 230000003252 repetitive effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 74
- 238000002845 discoloration Methods 0.000 description 17
- 238000000151 deposition Methods 0.000 description 15
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 12
- 239000004984 smart glass Substances 0.000 description 11
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- 238000002484 cyclic voltammetry Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- 229910005855 NiOx Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 WOx Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000011209 electrochromatography Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/155—Electrodes
- G02F2001/1552—Inner electrode, e.g. the electrochromic layer being sandwiched between the inner electrode and the support substrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
The present invention relates to an electrochromic device including an electrochromic material layer and an interface layer between electrodes for applying electrons to the electrochromic material layer and a negative voltage, and an electrochromic device including the electrochromic device.
Smart glass selectively transmits / absorbs sunlight, so that the temperature inside buildings and transportation means can be appropriately maintained, which can contribute to energy saving. In order to selectively transmit sunlight, it is necessary to control the color of the transparent glass, which can be realized through an electrochromic material whose color changes by electrical energy. Examples of the discoloring material include metal oxides such as WOx, NbOx, and NiOx, which are inorganic materials having characteristics that change from a transparent color to a color capable of absorbing visible light by reduction. By introducing these metal oxides in the form of a transparent thin film between substrates such as glass and connecting the electrodes to both sides so as to apply electric energy thereto, a smart device, for example, smart glass having an electrochromic property can be manufactured. In order to commercialize such a smart glass, it is desirable to have high transparency before electrochromatography, high color efficiency upon discoloration, fast response speed, and high stability with constant discoloration even in repeated discoloration. Particularly, it is difficult to use a device in which the degree of discoloration decreases with repetitive discoloration, as a smart glass.
The electron transport layer is applied to an organic electronic device such as an organic light emitting device (OLED) or an organic solar cell (OSC), and is formed of LiF, Alq 3 or the like. Such an interface layer is introduced to improve the efficiency of a device through electron tunneling effect and bandgap control, and is generally formed in the form of a thin film having a thickness of 5 to 20 nm. On the other hand, Al 2 O 3 has an excellent electrical characteristic of low leakage current and is an insulating layer material used in place of SiO 2 in a conventional semiconductor process.
However, there has been no attempt to improve the stability of the device by applying the electron transport layer, such as Al 2 O 3 thin film, to the electrochromic device.
The present inventors have made intensive researches in order to find out an electrochromic device structure having improved stability that exhibits a certain degree of discoloration even after repeating the electrochromism. As a result, it has been found that a thin film- It is possible to realize a stable electrochromic device in which the rate of decrease of the degree of coloring is remarkably reduced in the case of repetitive electrochromism, thereby completing the present invention.
A first aspect of the present invention provides an electrochromic device comprising an electrochromic material layer and an interface layer between a first electrode for applying electrons to the electrochromic material layer to which a negative voltage is applied.
A second aspect of the present invention provides an electrochromic glass having an electrochromic device according to the first aspect.
Hereinafter, the present invention will be described in more detail.
The present invention can significantly improve the stability of an electrochromic device when the electrochromic device is fabricated to include an interface layer between a first electrochromic material layer and a first electrode that provides electrons to the electrochromic material layer with a negative voltage applied thereto It is the first time that the Particularly, when the interfacial layer is introduced into the interfacial layer and the interfacial layer is formed to a predetermined thickness by using a deposition technique capable of finely adjusting the thickness of the formed thin film such as atomic layer deposition, Respectively.
The electrochromic device according to the present invention can be manufactured according to the configuration of a general electrochromic device known in the art. For example, in a conventional electrochromic device, a first substrate, a first electrode, an electrochromic material layer, an ion conductor layer or an electrolyte layer, an ion storage layer, a second electrode, and a second substrate are sequentially included, And an interface layer formed to a predetermined thickness between the material layers.
Considering the requirement of a commercially available electrochromic device, it is preferable that the device before coloring has high transparency. For example, a first substrate, a first electrode, a second electrode, and a second substrate of a transparent material may be used, but the present invention is not limited thereto.
The first electrode and the second electrode may be transparent electrodes, and examples thereof include indium tin oxide (ITO), transparent conductive oxide (TCO), conductive polymer, metal grid, carbon But are not limited to, thin films formed of carbon nanotubes (CNTs), graphenes, and carbon nanowires.
For example, the interface layer may be formed using an electron transport material such as Al 2 O 3 , LiF, Alq 3 , TiO 2 , ZnO, HfO 2 or PCBM ([6,6] -phenyl-C 61 -butyric acid methyl ester) It can be one thin film. Specifically, the interface layer may be an Al 2 O 3 thin film, but is not limited thereto.
For example, when an Al 2 O 3 thin film, which is generally used as an insulating layer material, is introduced as an interfacial layer, the current density may decrease with an increase in thickness, so that the interface layer may be formed with an average thickness of 0.05 to 5 nm . The introduced interface layer can provide an electrochromic device having improved stability even if it is partially formed on the electrode even if the electrode is not completely covered. Therefore, considering the partially formed case, the average thickness of the formed thin film may have a value lower than 0.1 nm, which is the thickness of the formed single-layer thin film.
For example, in order to finely control the thickness of the deposited thin film, the interface layer may be formed using atomic layer deposition (ALD), but is not limited thereto.
Specifically, the interface layer may be formed by repeating the atomic layer deposition method for 1 to 45 cycles, but is not limited thereto. For example, when the atomic layer deposition method is performed less than 5 times, the formed interface layer may be formed too thin to be sufficient to exhibit a desired effect. If the atomic layer deposition is performed more than 45 times, the interface layer is formed thick, The density decreases and the performance of the electrochromic device may deteriorate.
Specifically, when an Al 2 O 3 thin film is formed by an atomic layer deposition method using TMA and water used in the present invention as precursors, the thickness of a film deposited in a single cycle is about 1.2 A, The thickness of the thin film formed in the single cycle may be multiplied by the number of cycles to be repeated. For example, in the exemplary embodiments of the present invention, excellent stability was obtained by performing ALD at 10, 20, and 30 cycles, respectively. The thickness of the Al 2 O 3 thin film introduced into each device was about 1.2 nm, 2.4 nm, 3.6 nm.
The electrochromic device according to the present invention is characterized in that stability is improved by the introduction of an interface layer. Even if the electrochromic device having an interface layer introduced with an appropriate thickness performs coloring and decoloring 300 times, the reduction rate Can be reduced to 10% or less. In the present invention, the degree of coloring indicates the extent to which electrical energy is discolored, that is, the degree of coloring from transparent to colored, which may be proportional to the absorbance of the device to be measured.
According to a specific example of the present invention, as shown in FIG. 7, when the absorbance was measured while repeating coloring and decoloring at intervals of 10 seconds up to 300 times, the device including no electric transport layer and ALD were repeatedly subjected to 50 cycles of deposition In the case of the device including the Al 2 O 3 thin film, the initial values of the initial absorbance were about 1.7 and 1.0, respectively, and the discoloration was repeated 300 times. The measured values were 1.3 and 0.7, respectively, and the degree of discoloration of about 24% and 30% Of ITO only and Al 2 O 3 50 cycles), while the maximum absorbance of an Al 2 O 3 thin film formed by repeating
In addition, the present invention provides an electrochromic glass having the electrochromic device.
The above-mentioned electrochromic glass can be used not only as transportation means such as a passenger car, a large-sized bus, a train and an airplane, but also as a construction material such as a building It can be used as exterior glass. By using the above-mentioned electrochromic glass, the energy consumption can be reduced to 50%, which can be expected to help solve the energy problem. In addition, the present invention can be applied to various kinds of fixtures based on glass, but the application field is not limited thereto.
The electrochromic device including the interface layer at a predetermined thickness of the present invention is an electrochromic device having improved stability exhibiting a constant degree of discoloration even when coloring and discoloration are repeated, and therefore is useful as a glass for a transportation means such as an automobile and an airplane, Lt; / RTI >
1 schematically shows a process sequence corresponding to an ALD single cycle for depositing an Al 2 O 3 thin film
2 schematically illustrates an electrochromic smart window including an Al 2 O 3 thin film layer as an electron input layer according to an embodiment of the present invention.
FIG. 3 is a graph showing current density by an IV measurement of an ITO / Al 2 O 3 / Al structure device manufactured by depositing an aluminum electrode on an Al 2 O 3 thin film of different thickness formed on an ITO electrode.
4 is a graph showing cyclic voltammetry (CV) characteristics of the electrochromic device according to the present invention. In order to confirm the effect of Al 2 O 3 thin film thickness, Al 2 O 3 thin film was not included or each ALD process was repeated 10, 20, 30 and 50 cycles to include Al 2 O 3 thin films with different thicknesses Respectively.
FIG. 5 is a graph showing the UV-vis absorption spectrum in the coloring and discoloring state of the electrochromic device according to the present invention measured using a single device. FIG.
6 is a diagram schematically showing the result of repeated color change experiment with time using the electrochromic device according to the present invention.
FIG. 7 is a graph showing the UV-Vis absorbance according to the thickness of the Al 2 O 3 thin film measured at 550 nm while repeating coloration and discoloration at intervals of 10 seconds.
FIG. 8 is a photograph showing an actual photograph of a discoloration and a colored state of the electrochromic device manufactured according to the present invention.
Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are for further illustrating the present invention, and the scope of the present invention is not limited by these examples.
Example 1: Precursor selection and electron Inlet layer deposition
In order to efficiently transfer the electrons to the color changing device, an electron input layer was further introduced into the electrochromic smart window. Specifically, Al 2 O 3 was used as the electron-injecting layer, and atomic layer deposition (ALD) was used to precisely control the thickness of the electron-injecting layer to check the effect of the thickness of the electron- To form a very thin Al 2 O 3 layer. At this time, samples were prepared by changing the number of ALD operations in 10 cycle units in the range of 10 to 50 cycles to form an Al 2 O 3 layer having a thickness adjusted by about 1 nm unit. Trimethylaluminum (TMA) was used as a precursor, and the characteristics of the TMA were summarized in Table 1 below.
Compound name
(@ 760 Torr)
(@ 20 ℃)
(g / cm 3)
(Trimethylaluminum)
The bandgap of Al 2 O 3 introduced into the electron-injecting layer is known to be 7 to 8 eV, and the TMA used as the precursor has a very high vapor pressure at room temperature of about 9 Torr. Thus, the Al 2 O 3 thin film is deposited And thus TMA is used as a precursor for forming the Al 2 O 3 thin film in the present invention.
ALD, insert the transparent electrode and the glass Si- wafer deposited a (indium tin oxide) ITO in a vacuum chamber, the mixture was kept at a constant temperature of the substrate holder, as a precursor to inject TMA and H 2 O in the chamber Al 2 O 3 . FIG. 1 schematically shows a process sequence corresponding to one ALD cycle for depositing an Al 2 O 3 thin film. First, TMA was injected into the vacuum chamber for 1 second as a first reactant, adsorbed on the substrate surface, and then purged with argon for 15 seconds to discharge unreacted gas. Then, H 2 O was injected as a second reactant for 1 second, adsorbed on the surface, and then purged with argon for 15 seconds to discharge unreacted gas and complete one cycle.
Example 2: Electrochromic Smart Windows In terms of stability Electronic Of the inflow layer Effect by introduction
In the electrochromic smart window fabrication process generally used, a process of depositing an Al 2 O 3 thin film as an electron injecting layer is further performed by an ALD method to form a first substrate (transparent glass or plastic), a first conductive layer Electrode) - Electrochromic material - Electrolyte (or ion conductor) - Ion storage layer - Second conductive layer (transparent electrode) - Electrochromic second window (transparent glass or plastic) An electrochromic smart window (FIG. 2) further comprising an Al 2 O 3 thin film layer as an electron-injecting layer between the materials was prepared, and a series of samples were prepared by varying the thickness of the Al 2 O 3 thin film layer by varying the number of ALD cycles CV and UV characteristics were confirmed. At this time, the deposition temperature was maintained at 109 占 폚 and the pressure was maintained at 500 mTorr. The process conditions and the number of cycles for preparing each sample are summarized in Table 2 below. Specifically, ITO (resistivity: 15 Ω / sq) was deposited as an electrode on a glass substrate and used as both substrates and electrodes. An Al 2 O 3 thin film layer was introduced by ALD technique on the ITO electrode deposited on the glass substrate, and 10 wt% WO x solution (0.3 g of tungsten oxide dissolved in 3 ml of toluene) was spin-coated (2000 rpm for 10 seconds, 1000 rpm for 5 seconds), followed by heat treatment at 300 < 0 > C for 7 hours to introduce a coloring material layer thereon. 0.1 M HClO 4 as the electrolyte, platinum wire as the ion storage layer, and Ag / Ag + as the second conductive layer.
(° C)
(mTorr)
TMA (1 sec) -Ar (15 sec) -H 2 O (1 sec) -Ar (15 sec)
Example 3: Al 2 O 3 During deposition ALD Current density according to the number of cycles
As shown in Example 2, the ITO thin film deposited on the glass substrate was treated so as to include no Al 2 O 3 layer or to have a predetermined thickness (
Example 4: Al 2 O 3 During deposition ALD Surface roughness according to the number of cycles
Al 2 O 3 thin films were deposited on the surface of the silicon wafer under the conditions shown in Table 3 below while varying the number of ALD cycles, and the surface roughness was measured using AFM. The results are also shown in Table 3.
(° C)
(mTorr)
(nm)
TMA (1 sec) -Ar (15 sec) -H 2 O (1 sec) -Ar (15 sec)
As shown in Table 3, no increase in surface roughness was observed regardless of the number of ALD cycles. It is confirmed that the surface roughness is hardly changed even when the number of process repetitions is increased because it is adsorbed on the surface at the level of a single atomic layer on the principle of ALD method. As described above, when introducing the electron-injecting layer using the ALD deposition method according to the present invention, it is possible to provide a smooth surface even when an additional thin-film layer is introduced, so that the electrochromic material introduced onto the electron- .
Example 5: Al 2 O 3 Electronic The inlet layer Additional Electrochromic Smart Included Windows Electrical and optical properties
Electrochromic smart windows were fabricated by using tungsten oxide (WOx) as an electrochromic material in order to confirm the effect of introducing electron injection layer on electrical and optical properties of electrochromic smart windows. Glass was used as a substrate, and ITO film was deposited on the substrate as an electrode. The electrochromic device was fabricated by depositing Al 2 O 3 as an electron input layer on the ITO film deposited glass substrate by ALD technique while changing the number of cycles. The conditions for performing the ALD process and the number of iterative cycles were as shown in Table 2.
First, CV (cyclic voltammetry) characteristics of the electrochromic device were measured. Since the electrochromic material, WOx in this embodiment, is decolorized and discolored according to the movement of the electrons between the working electrode and the counter electrode according to the applied voltage, the electrochromic device applies a voltage to the device and measures the current Respectively. The measurement results are shown in Fig. As shown in FIG. 4, similar cyclic current-voltage curves were shown regardless of the deposition of Al 2 O 3 and the number of ALD cycles performed for deposition thereof.
Further, in order to confirm the stability due to repeated discoloration, the CV measurement was carried out and UV-vis spectroscopic analysis was carried out. First, UV-vis spectra were obtained by scanning wavelengths from 300 nm to 900 nm for a single element in the colored and discolored state, and the results are shown in FIG. The wavelength at which the difference from the above spectrum was maximized, 550 nm, was determined as a wavelength to be used in the subsequent discoloration experiment. At 550 nm, the device exhibited a transmittance of 11.73% and a transmittance of 93.84%. As shown in FIG. 6, the absorbance was measured as a function of time at the set wavelength of 550 nm while repeating continuous coloring and discoloration at a cycle of 10 seconds.
The absorbance at 550 nm was measured and shown in FIG. 7, with repeatedly repeating coloring and decolorization in a period of 10 seconds for the device not including or containing Al 2 O 3 thin film layer formed at different thicknesses. As shown in FIG. 7, the device including the Al 2 O 3 thin film layer formed by repeating
Claims (11)
The electrochromic device comprising a first substrate, a first electrode, an interface layer, an electrochromic material layer, an ion conductor layer or an electrolyte layer, an ion storage layer, a second electrode, and a second substrate in this order.
Wherein the first substrate, the first electrode, the second electrode, and the second substrate are transparent.
The first electrode and the second electrode may be formed of indium tin oxide (ITO), a transparent conductive oxide (TCO), a conductive polymer, a metal grid, a carbon nanotube (CNT) Wherein the thin film is formed of a material selected from the group consisting of graphene and carbon nanowires.
The interface layer is formed of an electron transport material selected from the group consisting of Al 2 O 3 , LiF, Alq 3 , TiO 2 , ZnO, HfO 2 or PCBM ([6,6] -phenyl-C 61 -butyric acid methyl ester) Wherein the electrochromic device is a thin film.
Wherein the interface layer is formed with an average thickness of 0.05 to 5 nm.
Wherein the interface layer is formed by atomic layer deposition (ALD).
Wherein the interfacial layer is formed by repeating an atomic layer deposition process for 1 to 45 cycles.
And the reduction rate of the degree of coloring is reduced to 10% or less until the coloring and decoloring are repeated 300 times.
Electrochromic glass for transportation, including for passenger cars, large buses, trains and aircraft, or architectural exterior.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150121815A KR20170026812A (en) | 2015-08-28 | 2015-08-28 | A electrochromic window further comprising interfacial layer between electrochromic material layer and electrode |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020150121815A KR20170026812A (en) | 2015-08-28 | 2015-08-28 | A electrochromic window further comprising interfacial layer between electrochromic material layer and electrode |
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