KR20170026729A - Light sintering apparatus of metal nano particle composition and method for manufacturing conductive substrate using the same - Google Patents

Light sintering apparatus of metal nano particle composition and method for manufacturing conductive substrate using the same Download PDF

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Publication number
KR20170026729A
KR20170026729A KR1020150120785A KR20150120785A KR20170026729A KR 20170026729 A KR20170026729 A KR 20170026729A KR 1020150120785 A KR1020150120785 A KR 1020150120785A KR 20150120785 A KR20150120785 A KR 20150120785A KR 20170026729 A KR20170026729 A KR 20170026729A
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South Korea
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substrate
light
coating layer
sintering
conductive layer
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KR1020150120785A
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Korean (ko)
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서용곤
김윤진
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전자부품연구원
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Publication of KR20170026729A publication Critical patent/KR20170026729A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0033—Apparatus or processes specially adapted for manufacturing conductors or cables by electrostatic coating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Abstract

The present invention relates to a photo-sintering apparatus for a metal nanoparticle composition and a method of manufacturing a conductive substrate using the same, wherein a metal nanoparticle composition coated on a substrate is coated and then photo-sintered to form a conductive layer having good electrical and physical properties . The light sintering apparatus according to the present invention includes a substrate mounting portion and a dual light sintered portion. The substrate mounting part has a substrate on which a coating layer is formed by applying a metal nanoparticle composition containing copper nanoparticles on an upper surface, and an opening is formed to expose the lower part of the substrate. The dual light sintered portion is provided on the upper portion of the substrate mounting portion and below the opening portion of the substrate mounting portion, and is irradiated with light to the upper and lower portions of the substrate to photo-sinter the coating layer to form a conductive layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a light sintering apparatus for a metal nanoparticle composition and a method for manufacturing a conductive substrate using the metal nanoparticle composition.

The present invention relates to a light sintering apparatus and method, and more particularly, to a light sintering apparatus for a metal nanoparticle composition which forms a conductive layer by applying light scattering to a metal nanoparticle composition coated on a substrate, And a method for producing the same.

Light sintering has been used as a method for producing a conductive substrate (film) including a conductive layer using a composition containing metal nanoparticles such as copper nanoparticles (hereinafter referred to as a 'metal nanoparticle composition').

In the conventional light sintering method, the metal nanoparticle composition is prepared in the form of an ink or a paste, and then coated on the substrate to form a coating layer. Then, the conductive layer is formed by photo-sintering the coating layer on the substrate by light irradiation. At this time, a xenon lamp is mainly used as a light irradiation means.

In the conventional light sintering method, when the coating layer is thick, the light sintering is performed well at the surface portion of the coating layer, but the light sintering portion at the portion contacting the substrate has a disadvantage that the light sintering is not performed well. That is, when the coating layer is thick, the light irradiated at the time of photo-sintering may not affect the lower portion of the coating layer. In this case, the lower portion of the coating layer, that is, the portion contacting the substrate, may not be sintered well.

On the contrary, even if the thickness of the coating layer is thin, the adhesion force with the substrate is insufficient, and peeling phenomenon in which the conductive layer is separated from the substrate after light sintering may easily occur. That is, even if the thickness of the coating layer is thin, the light sintering increases the resistance in the vertical direction from the top of the conductive layer toward the substrate, because the top of the coating layer is made better than the bottom. This may cause a problem that the adhesive force between the substrate and the conductive layer is reduced and the conductive layer is separated from the substrate.

When the substrate is a flexible substrate having a small thickness, the substrate may easily bend due to the high energy of the light to be irradiated. That is, the light output from the xenon lamp for irradiating the coating layer includes ultraviolet light, visible light and infrared light as white light. The ultraviolet light and the visible light contained in the light output from the xenon lamp are absorbed by the metal nanoparticles, but the infrared part is absorbed by the substrate, which causes the substrate to warp.

Korean Patent Publication No. 2014-0044743 (Apr.

Accordingly, an object of the present invention is to provide a photo-sintering apparatus for metal nano-particle composition capable of photo-sintering the entire coating layer even if the thickness of the coating layer is thick, and a method for manufacturing a conductive substrate using the same.

Another object of the present invention is to provide a photo-sintering apparatus for a metal nano-particle composition capable of maintaining a good adhesive force between a conductive layer and a substrate after photo-sintering, and a method of manufacturing a conductive substrate using the same.

Still another object of the present invention is to provide a light sintering apparatus for a metal nano-particle composition capable of suppressing the phenomenon that a substrate is bent by light sintering even if the substrate is a thin flexible substrate, and a method for manufacturing a conductive substrate using the same .

In order to achieve the above object, the present invention provides a method of manufacturing a metal nanoparticle composition, comprising: forming a coating layer by applying a metal nanoparticle composition containing copper nanoparticles on a substrate; drying the coating layer; And a step of photo-sintering the coating layer by irradiating light to a lower portion to form a conductive layer. The present invention also provides a method of manufacturing a conductive substrate using light sintering.

In the method of manufacturing a conductive substrate according to the present invention, in the step of forming the conductive layer, white pulsed light is irradiated onto the upper part of the coating layer using a xenon lamp, and ultraviolet to visible light band The LED light of at least one band can be irradiated to the lower portion of the coating layer.

In the method of manufacturing a conductive substrate according to the present invention, in the step of forming the conductive layer, white pulsed light is irradiated onto the upper part of the coating layer using a xenon lamp, white light is irradiated onto the lower part of the coating layer .

In the method of manufacturing a conductive substrate according to the present invention, in the step of forming the conductive layer, the white pulsed light has a pulse width of 100 to 5000 us, an output voltage of 100 to 900 V, a pulse number of 1 to 10, J / cm2 to 60 J / cm < 2 >.

The present invention also provides a light sintering apparatus for a metal nanoparticle composition comprising a substrate mounting part and a dual light sintered part. The substrate mounting part includes a substrate on which a coating layer is formed by applying a metal nanoparticle composition containing copper nanoparticles on an upper surface thereof, and an opening is formed to expose a lower portion of the substrate. The dual light sintered part is provided on the upper part of the substrate mounting part and the opening part of the substrate mounting part, and the upper layer and the lower part of the substrate are irradiated with light to photo-sinter the coating layer to form a conductive layer.

In the light sintering apparatus of the present invention according to the present invention, the dual light sintering unit may include a xenon lamp unit and an LED module. The xenon lamp unit is installed on the upper part of the substrate mounting part and irradiates the upper part of the coating layer with white pulsed light. The LED module is installed below the open part of the substrate mounting part and irradiates the coating layer with LED light of at least one of the ultraviolet to visible light band through the lower part of the substrate.

In the light sintering apparatus of the present invention according to the present invention, the dual light sintering unit may include a xenon lamp unit and a halogen lamp. The xenon lamp unit is installed on the upper part of the substrate mounting part and irradiates the upper part of the coating layer with white pulsed light. The halogen lamp is installed below the opening of the substrate loading part and irradiates white light through the lower part of the substrate.

According to the present invention, since the dual light sintered part forms a conductive layer by uniformly sintering the entire coating layer by irradiating light from above and below a coating layer formed by applying a metal nanoparticle composition containing copper nanoparticles on a substrate, Even if the thickness of the coating layer is thick, the entire coating layer can be uniformly photo-sintered.

Also, since the conductive layer is formed by uniformly sintering the entire coating layer by irradiating light from the upper and lower portions of the coating layer through the dual light sintered portion, resistance variation in the vertical direction of the conductive layer is reduced, Good adhesion can be maintained.

In addition, since the substrate on which the coating layer is formed is uniformly irradiated with light uniformly over a short period of time through the dual light sintered portion to perform light sintering, compared to a method in which light is irradiated and sintered only at the upper portion of the existing coating layer, The problem of bending can be suppressed. That is, when light sintering is performed, white pulsed light is irradiated to the upper portion of the coating layer using a xenon lamp. Infrared rays included in white pulsed light are absorbed by the substrate, which is a major cause of bending the substrate. In the present invention, since the light is irradiated from the top and bottom of the substrate, the light energy of the xenon lamp irradiated at the top of the substrate can be lowered, and the problem of warping of the substrate can be suppressed.

1 is a view showing a photo-sintering apparatus for a metal nanoparticle composition according to an embodiment of the present invention.
2 is a graph showing the spectrum of a xenon lamp used in light sintering.
3 is a graph showing absorption spectra of copper nanoparticles contained in the metal nanoparticle composition.
4 is a graph showing the wavelength band of light emitted from the LED module of FIG.
5 is a flowchart illustrating a method of manufacturing a conductive substrate using the light sintering apparatus of FIG.
6 to 10 are views showing respective steps of the method of manufacturing the conductive substrate of FIG.
11 is a SEM photograph of the conductive layer manufactured by the manufacturing method according to the comparative example.
12 is a SEM photograph of the conductive layer manufactured by the manufacturing method according to the embodiment.

In the following description, only parts necessary for understanding embodiments of the present invention will be described, and descriptions of other parts will be omitted to the extent that they do not disturb the gist of the present invention.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary meanings and the inventor is not limited to the meaning of the terms in order to describe his invention in the best way. It should be interpreted as meaning and concept consistent with the technical idea of the present invention. Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely preferred embodiments of the present invention, and are not intended to represent all of the technical ideas of the present invention, so that various equivalents And variations are possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing a photo-sintering apparatus for a metal nanoparticle composition according to an embodiment of the present invention. 10 is a cross-sectional view showing a conductive substrate manufactured by the light sintering apparatus of FIG.

Referring to FIGS. 1 and 10, the light sintering apparatus 20 according to the present embodiment photo-sintering a coating layer 14 formed by applying a metal nanoparticle composition containing copper nanoparticles on a substrate 12, (16), and includes a substrate mounting portion (30) and dual light sintered portions (40, 50).

The substrate mounting portion 30 is provided with a substrate 12 on which a coating layer 14 is formed by applying a metal nanoparticle composition containing copper nanoparticles on an upper surface of the substrate mounting portion 30 and an opening portion 31 Respectively. At this time, the substrate mounting portion 30 may be realized in the form of a stage having a opening 31 or a conveying rail. When the substrate mounting portion 30 is embodied as a stage, the substrate 12 can be transported and mounted on the stage with a separate transferring member. In the case where the substrate mounting portion 30 is embodied as a conveying rail, the substrate 12 may be transferred to a portion where the light sintering apparatus 20 is installed along the conveying rail.

The dual optical sintered parts 40 and 50 are installed on the upper part of the substrate mounting part 30 and the opening part 31 of the substrate mounting part 30 to irradiate light to the upper and lower parts of the substrate 12, ) Is photo-sintered to form the conductive layer 16. The dual optical isolator 40, 50 includes a xenon lamp unit 40 and an LED module 50. The Xenon lamp unit 40 is installed on the upper part of the substrate mounting part 30 and irradiates the upper part of the coating layer 14 with white pulsed light 45. The LED module 50 is installed under the open part 31 of the substrate mounting part 30 and the LED module 50 is mounted on the coating layer 14 through the lower part of the substrate 12 so that the LED light in at least one of the ultraviolet to visible light bands 55).

At this time, the xenon lamp unit 40 includes a xenon lamp 41 and a reflection plate 43. The Xenon lamp 41 outputs white pulsed light 45. The reflection plate 43 is provided on the upper portion of the xenon lamp 41 and reflects the light output to the upper portion of the xenon lamp 41 to the substrate 12 located below the xenon lamp 41.

The light sintering refers to a series of processes in which metal particles are necked and then metallized by irradiating the coating layer 14 with white pulsed light 45 of the xenon lamp 41. This light sintering occurs by two sintering mechanisms. One is that metal nanoparticles absorb light and sintering occurs when the joule heat generated by the metal nanoparticles propagates to other particles. The other is that the metal nanoparticles are melted by the heat of the pure pulse light and the sintering proceeds. In the latter case, however, due to the inherent nature of the metal, most of the light is reflected, so that sintering is not easy and damage to the substrate 12 is caused, or excessive light irradiation energy is required to shorten the life of the lamp.

The reason why the white pulse light 45 generated from the xenon lamp 41 is used as the white pulse light 45 in this embodiment is that the pulse width, the pulse gap, the number of pulses pulse numbers and intensity can be precisely controlled.

When a flexible substrate is used for the production of a conductive substrate, the pulse light 45 of white color has a pulse width of 100 to 5000 us, a pulse gap of 0.01 to 1 ms, an output voltage of 100 to 900 V, a pulse number of 1 to 10, And light of 1 J / cm 2 to 60 J / cm 2 can be used. For example, when the thickness of the coating layer 14 is less than 9 占 퐉, the number of pulses of white pulsed light 45 is 1, and when the thickness exceeds 9 占 퐉, the number of pulses of white pulsed light 45 may be 2 or more.

If the pulse width of the white pulsed light 45 is larger than 5000 mu s, the incident energy per unit time is reduced and the light sintering efficiency may be lowered.

If the pulse gap is greater than 1 ms or the number of pulses is greater than 10, the coating layer 14 may not be properly sintered due to the low energy of the white pulse light 45.

In addition, when the pulse gap is less than 0.01 ms or the intensity of the white pulse light 45 is more than 60 J / cm 2, the damage or the life of the xenon lamp 41 may be shortened and the substrate 12 may be damaged have.

In addition, when the intensity of the white pulse light 45 is 1 J / cm 2 or less, the reduction reaction for reducing the copper oxide film of the copper nanoparticles to copper is weak, so that the electrical resistance characteristic of the conductive layer 16 may be deteriorated.

On the contrary, when the intensity of the pulsed light 45 of white exceeds 60 J / cm 2, high energy is provided to the substrate 12, so that the substrate 12 may suffer damage such as shrinkage, warping and twisting, The conductive layer 16 may be peeled off from the substrate 12.

The LED module 50 includes an LED substrate 51 and a plurality of LED elements 53 mounted on the LED substrate 51. The LED element 53 is mounted on the LED substrate 51 so as to be disposed below the opening portion 31 of the substrate mounting portion 30. [ The plurality of LED elements 53 are devices for outputting LED light 55 of a wavelength range that the metal nanoparticles can absorb, and can output the LED light 55 of single wavelength or multiple wavelengths. Or a plurality of LED elements 53 are devices that output LED light 55 of a wavelength range capable of minimizing light absorption of the substrate and can output LED light 55 of a single wavelength or multiple wavelengths. The LED element 55 is mounted on the LED substrate 51 in a chip form or a package form.

In this embodiment, an LED module 50 for outputting LED light 55 of multiple wavelengths is disclosed.

The reason for using the xenon lamp 41 and the LED module 50 in the light sintering is as follows.

Referring to FIG. 2, the spectrum of the xenon lamp 41 outputs light having various wavelengths including ultraviolet rays, visible rays, and infrared rays. 2 is a graph showing the spectrum of the xenon lamp 41 used in photo-sintering.

The absorption spectrum of the copper nanoparticles contained in the metal nanoparticle composition is shown in FIG. 8 shows an absorption spectrum when the size of the copper nanoparticles is 100 nm and the thickness of the copper oxide film of the copper nanoparticles is 7 nm. The size of copper nanoparticles and the thickness of copper oxide film change. The absorption spectrum of the surface changes, but copper nanoparticles generally absorb ultraviolet to visible light.

As a result, the metal nanoparticle composition containing the copper nanoparticles is coated on the substrate 12 in the form of ink or paste to form the coating layer 14, and then the light of the xenon lamp 41 is irradiated for the light sintering, (14) absorbs visible light from ultraviolet rays. The infrared portion of the xenon lamp 41 is absorbed by the substrate 12 and is a major cause of deflection of the substrate 12. [

Also, when the coating layer 14 is thick, the irradiated light does not affect the lower part of the coating layer 14, and only the upper part of the coating layer 14 is sintered. The adhesion between the substrate 12 and the conductive layer 16 is increased because the upper portion of the coating layer 14 is more photo-sintered than the lower portion and the resistance increases toward the substrate 12 in the vertical direction on the cross section even if the coating layer 14 is thin. This is weak.

Therefore, in this embodiment, the LED element 53 having various wavelengths from the ultraviolet rays to the visible ray, which coincides with the absorption spectrum of the copper nanoparticles or is similar to the absorption spectrum of the copper nanoparticles, is disposed under the substrate 12 during the irradiation of the xenon lamp 41, 55 are irradiated on the substrate 12, it is possible to photo-sinter the thick coating layer 14. Further, since the resistance variation in the direction perpendicular to the surface of the substrate 12 can be reduced, the adhesive force between the substrate 12 and the conductive layer 16 can be increased. Also, warping of the substrate 12, which may occur in the light sintering process, can be suppressed.

For example, as shown in FIG. 4, an LED module 50 having various LED elements 53 having a wavelength band that can be absorbed by copper nanoparticles can be used. Here, FIG. 4 is a graph showing a wavelength band of light emitted from the LED module 50 of FIG.

On the other hand, FIG. 4 shows an example of using the LED module 50 for outputting the LED light 55 of various wavelengths, but the present invention is not limited thereto. That is, the LED module 50 can use the LED light 53 of a single wavelength in the light sintering by disposing the single-wavelength LED elements 53.

In this embodiment, the LED module 50 is provided as a means for irradiating light to the substrate 12 from the lower portion of the substrate mounting portion 30. However, the present invention is not limited thereto. For example, instead of the LED module 50, a halogen lamp that outputs white light may be provided.

As described above, according to the present embodiment, the dual light-sintered portions 40 and 50 are formed by irradiating light on the top and bottom of the coating layer 14 formed by applying the metal nanoparticle composition containing copper nanoparticles on the substrate 12 The entire coating layer 14 is photo-sintered uniformly to form the conductive layer 16, so that even if the thickness of the coating layer 14 is thick, the entire coating layer 14 can be stably photo-sintered.

Since the conductive layer 16 is formed by uniformly photo-sintering the entire coating layer 14 by irradiating light from the upper and lower portions of the coating layer 14 through the dual light sintered portions 40 and 50, ) Can be reduced to maintain a good adhesive force between the conductive layer 16 and the substrate 12 after the light sintering.

In addition, since light is uniformly irradiated to the substrate 12 on which the coating layer 14 is formed in a short period of time through the dual light sintered portions 40 and 50 to perform light sintering, light is irradiated only from the upper portion of the existing coating layer The problem of bending the substrate 12 during the light sintering process can be suppressed as compared with the sintering process. The white light pulses 45 are irradiated to the upper portion of the coating layer 14 during the photo-sintering process using the Xenon lamp 41. The infrared light contained in the white pulsed light 45 is absorbed by the substrate 12 Which is a major cause of bending the substrate 12. The light energy of the Xenon lamp 41 irradiated from the upper portion of the substrate 12 can be lowered and the problem of the warpage of the substrate 12 can be suppressed .

A method of manufacturing the conductive substrate 10 using the light sintering apparatus 20 according to the present embodiment will now be described with reference to FIGS. 5 to 10. FIG. 5 is a flowchart illustrating a method of manufacturing the conductive substrate 10 using the light sintering apparatus 20 of FIG. FIGS. 6 to 10 are views showing respective steps of the method for manufacturing the conductive substrate 10 of FIG.

First, as shown in Fig. 6, a substrate 12 is prepared. As the substrate 12, a synthetic resin substrate, a metal substrate selected from stainless steel, aluminum, gold, and silver, a non-metal substrate selected from ITO (Indium Tin Oxide), ceramic, glass, and silicon may be used. Examples of the material of the synthetic resin substrate include polyethyleneterephthalate (PET), polyimide, polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene (PEN), polyphenylene sulfide (PPS), polyallylate, polycarbonate (PC), cellulose triacetate (CTA), and cellulose acetate propionate propinonate (CAP) may be used, but the present invention is not limited thereto.

The metal nanoparticle composition for forming the conductive layer 16 is also prepared. The metal nanoparticle composition is a composition for light sintering comprising copper nanoparticles, and may be produced in the form of an ink or a paste. Such a metal nanoparticle composition may include copper nanoparticles, a reducing agent, a dispersant, a binder, and a solvent.

The metal nanoparticles may further include silver nanoparticles in addition to copper nanoparticles, silver powder in the form of flakes, and the like.

Copper nanoparticles on which copper oxide film is formed are non-conductive but converted into copper particles having conductivity by light sintering to be used as a conductor source. The copper nanoparticles may be core-shell type particles, and the copper oxide film on the surface may be formed to a thickness of 50 nm or less. At this time, copper nanoparticles having a thickness of 50 nm or less are used for the copper oxide film because if the thickness of the copper oxide film is more than 50 nm, a part of the copper oxide film may not be reduced to copper by light irradiation to be. The copper nanoparticles may have a D 50 of 900 nm or less and a D max of 2 μm or less.

The reducing agent reduces the copper oxide film of the copper nanoparticles to copper by light irradiation. Examples of the reducing agent include an aldehyde-based compound, an acid including ascorbic acid, a phosphorus-containing compound, a metal-based reducing agent, p-benzoquinone, hydroquinone or anthraquinone.

For example, formaldehyde, acetaldehyde, etc. may be used as the aldehyde compound used as a reducing agent.

Examples of the acid used as the reducing agent include oxalic acid, formic acid, ascorbic acid, sulfonic acid, dodecyl benzene sulfonic acid, maleic acid, Hexamic acid, phosphoric acid, O-phthalic acid, acrylic acid, and the like can be used.

Phosphites, hypophosphites and phosphorous acid may be used as the phosphorus compound used as a reducing agent. The phosphorus compounds in the reducing agent are hydrogenphosphonates (acid phosphites) containing H2 (O) 2 OH - groups such as NH 4 HP (O) 2 OH containing PO 3 3- groups, H2P 2 O 5 2- Phosphites including HPO 3 2- such as diphosphites, (NH 4 ) 2 HPO 3 O H 2 O, CuHPO 3 O H 2 O, SnHPO 3 , and Al 2 (HPO 3 ) 3 O 4 H 2 O, (RO) phosphite ester, Hypophosphite ( H 2 PO 2 -) , such as 3 P, phosphatidylcholine, triphenylphosphate, cyclophosphamide , parathion, Sarin (phosphinate), Glyphosate (phosphonate), fosfomycin (phosphonate), zoledronic acid (phosphonate), and Glufosinate (phosphinate) organic phosphines such as Organophosphorus, triphenylphosphine, etc. (PR 3), triphenylphosphine oxide such as Phosphine oxide (OPR 3), ( CH 3 O) Phosphonite (P (OR) R 2) , such as 2 PPh, Phosphonite (P (OR) 2 R), Phosphinate (OP (OR) R 2 ), organic phosphonates (OP (OR) 2 R), Phosphate (PO 4 3- ), parathion, malathion, methyl parathion, chlorpyrifos , organophosphate (OP (OR) 3 ) such as diazinon, dichlorvos, phosmet, fenitrothion, tetrachlorvinphos, azamethiphos, azinphos methyl and the like.

As the metal reducing agent, lithium aluminum hydride (LiAlH 4 ), diisobutylaluminum hydride (DIBAL-H) and Lindlar catalyst can be used.

By including the reducing agent as a catalyst of the metal nanoparticle composition, it is possible to perform sintering through light irradiation, thereby suppressing damage such as warpage or shrinkage of the substrate 12, The process time can be reduced and the process cost can be reduced.

In the metal nanoparticle composition according to the present embodiment, the reducing agent is preferably added in an amount of 0.1 to 5 parts by weight based on 100 parts by weight of the metal nanoparticles. If the addition amount of the reducing agent is more than 5 parts by weight, there may arise a problem of lowering the dispersibility in the metal nanoparticle composition and lowering the homogeneity due to lowering of the compatibility. On the contrary, if the amount of the reducing agent is less than 0.1 part by weight, a problem of not being smoothly reduced and sintered by light irradiation may occur.

The dispersing agent uniformly disperses the metal nanoparticles including the copper nanoparticles in the metal nanoparticle composition to suppress the generation of pores in the conductive layer 16 formed by photo-sintering. As such a dispersing agent, a cationic dispersant, an anionic dispersant or a zwitterionic dispersant may be used.

Examples of the dispersing agent include an amine-based polymer dispersing agent such as polyethyleneimine and polyvinylpyrrolidone; a hydrocarbon-based polymer dispersing agent having a carboxylic acid group in the molecule such as polyacrylic acid and carboxymethylcellulose; a polyvinyl alcohol-based resin such as POVAL (polyvinyl alcohol) A polymer dispersant having a polar group such as a copolymer, an olefin-maleic acid copolymer, or a copolymer having a polyethyleneimine moiety and a polyethylene oxide moiety in one molecule may be used, but is not limited thereto.

The binder functions as a material that binds metal nanoparticles when the conductive layer 16 is formed using the metal nanoparticle composition, and the conductive layer 16 functions to maintain excellent printing properties and high aspect ratio .

Examples of such binders include PVP, PVA and PVC, cellulose resins, polyvinyl chloride resins, copolymer resins, polyvinyl alcohol resins, polyvinyl pyrrolidone resins, acrylic resins, vinyl acetate- An alkyd resin, an epoxy resin, a phenol resin, a rosin ester resin, a polyester resin, or silicone may be used, but is not limited thereto.

For example, a mixed resin of an epoxy acrylate, a polyvinyl acetal, and a phenol resin may be used as the binder. By using the above-mentioned mixed resin as a binder, thermal curing can be performed at a temperature of about 150 ° C. (a three-dimensional network structure can be formed to form a thermally highly stable structure), whereby the heat resistance of the metal nanoparticle composition can be improved have.

Next, as shown in FIG. 7, a coating layer 14 is formed on the substrate 12 by coating the metal nanoparticle composition containing copper nanoparticles in step S61. As the method of forming the coating layer 14, screen printing, gravure, offset, flexo, aerosol jet, slit die coating, bar coating and the like can be used.

Next, as shown in FIG. 8, the coating layer 14 applied in the step S63 is dried to remove the solvent contained in the coating layer 14. That is, the substrate 12 coated with the coating layer 14 is dried by providing hot air or infrared rays at 60 to 100 DEG C in an oven.

Then, photo-sintering is performed on the dried coating layer 14 in step 65 as shown in FIG. 9, thereby manufacturing a conductive substrate 10 having the photo-sintered conductive layer 16 as shown in FIG. 10 . The substrate 12 on which the dried coating layer 14 is formed is mounted on the substrate mounting portion 30 of the light sintering apparatus 20. Next, the conductive layer 16 is formed by photo-sintering the coating layer 14 by irradiating light onto the upper and lower portions of the coating layer 14 with the substrate 12 as the center.

The Xenon lamp unit 40 provided on the upper part of the substrate mounting part 30 irradiates the white pulsed light 45 to the coating layer 14 on the substrate 12, (50) irradiates the LED light (55) to the coating layer (14) through an opening below the substrate (12) to photo-sinter the coating layer (14). At this time, the white pulsed light 45 and the LED light 55 can be irradiated to the coating layer 14 of the substrate 12 at the same time.

The copper nanoparticles of the coating layer 14 are reduced and sintered by the white pulsed light 45 and the LED light 55 to form the conductive layer 16.

The characteristics of the conductive layer 16 photo-sintered using the light sintering apparatus 20 according to the present embodiment were tested as follows.

In Embodiment 1, the light sintering is performed by irradiating the pulse light 45 of white color and the LED light 55 together using the light sintering apparatus 20 according to the present embodiment. In the comparative example, only the pulse light 45 of white color was used for light sintering, and the LED light 55 was not irradiated.

The paste containing copper nanoparticles was printed on a PET film with a screen printer to form a coating layer 14. The substrate 12 having the printed coating layer 14 was dried in an oven at 100 DEG C for 30 minutes. The dried coating layer was irradiated with light, and irradiated Xenon lamp (41) condition was irradiated with a single pulse for 1/50 ms, and the light quantity at that time was 4 J / cm 2 .

In the case of the LED module 50, ten 1W-level 455nm LED elements 53 were modularized in an array form on the LED substrate 51, and the LED light 55 was irradiated from the bottom of the substrate 12. Experiments were conducted according to whether or not the LED light 55 was irradiated. The cross section of the conductive layer 16 under the substrate 12 after the light sintering was measured through an SEM. The measured SEM photographs are shown in Figs. 11 and 12. 11 is a SEM photograph of the conductive layer manufactured by the manufacturing method according to the comparative example. 12 is a SEM photograph of the conductive layer manufactured by the manufacturing method according to the embodiment.

Referring to FIG. 11, in the comparative example in which only the xenon lamp was irradiated, it can be confirmed that the lower part of the conductive layer was not sintered.

On the other hand, referring to FIG. 12, in the case of Example 1 in which a xenon lamp and an LED module are used together, it can be confirmed that light sintering is well performed to a lower portion of the conductive layer. That is, it can be confirmed that the conductive layer is uniformly photo-sintered as a whole.

In the case of sheet resistance, the conductive layer of the comparative example without irradiation with LED light was 0.2? / ?, and the conductive layer of Example 1 in which LED light irradiation was simultaneously performed was 0.03? / ?. That is, it can be confirmed that the conductive layer of Example 1 has better electric conductivity than the comparative example.

It should be noted that the embodiments disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

10: Conductive substrate
12: substrate
14: Coating layer
16: conductive layer
20: Light sintering device
30: Substrate mounting part
31:
40: Xenon lamp part
41: Xenon lamp
43: Reflector
45: White pulsed light
50: LED module
51: LED substrate
53: LED element
55: LED light

Claims (6)

Applying a metal nanoparticle composition comprising copper nanoparticles on a substrate to form a coating layer;
Drying the coating layer;
Forming a conductive layer by photo-sintering the coating layer by irradiating light to upper and lower portions of the coating layer dried around the substrate;
Wherein the light-sintering is performed by using a light source. The method according to claim 1, wherein, in the step of forming the conductive layer,
Wherein the coating layer is irradiated with white pulsed light by using a xenon lamp and the LED light of at least one of ultraviolet to visible light bands is irradiated to the lower part of the coating layer by using an LED module Wherein the conductive substrate is made of a conductive material. The method according to claim 1, wherein, in the step of forming the conductive layer,
Wherein the white light is irradiated to the top of the coating layer using a xenon lamp and the white light is irradiated to the bottom of the coating layer using a halogen lamp. The method according to claim 2 or 3, wherein in the step of forming the conductive layer,
Wherein the white pulsed light has a pulse width of 100 to 5000 占 퐏, an output voltage of 100 to 900 V, a pulse number of 1 to 10, and an intensity of 1 J / cm2 to 60 J / cm2. Way. A substrate mounting part on which a substrate on which a coating layer is formed by applying a metal nanoparticle composition containing copper nanoparticles on an upper surface thereof and an opening formed on the substrate to expose a lower portion of the substrate;
A dual light sintered portion provided on an upper portion of the substrate mounting portion and an opening portion of the substrate mounting portion to optically sinter the coating layer by irradiating light to upper and lower portions of the substrate to form a conductive layer;
Wherein the metal nanoparticle composition is a metal. 6. The method of claim 5, wherein the dual-
A xenon lamp part provided on the substrate mounting part and irradiating white pulsed light on the coating layer;
An LED module installed below the open part of the substrate loading part and irradiating the coating layer with LED light of at least one of the ultraviolet to visible light band through a lower part of the substrate;
Wherein the metal nanoparticle composition is a sintered body.
KR1020150120785A 2015-08-27 2015-08-27 Light sintering apparatus of metal nano particle composition and method for manufacturing conductive substrate using the same KR20170026729A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190036211A (en) * 2017-09-27 2019-04-04 한국화학연구원 Light sintering conductive electrode, and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140044743A (en) 2012-10-04 2014-04-15 한양대학교 산학협력단 Conductive hybrid cu ink and light sintering method using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140044743A (en) 2012-10-04 2014-04-15 한양대학교 산학협력단 Conductive hybrid cu ink and light sintering method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190036211A (en) * 2017-09-27 2019-04-04 한국화학연구원 Light sintering conductive electrode, and method of manufacturing the same

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