KR20170020182A

KR20170020182A - Qusntum Dot Light Conversion Device

Info

Publication number: KR20170020182A
Application number: KR1020150115063A
Authority: KR
Inventors: 박철
Original assignee: (주)이노큐디
Priority date: 2015-08-14
Filing date: 2015-08-14
Publication date: 2017-02-22

Abstract

The present invention relates to a device using quantum dots of several nanometers and capable of converting blue light into green or red light. A quantum dot device, which is mounted on a liquid crystal display and can improve luminous efficiency and converts light into light similar to natural colors, is manufactured to have an efficient structure where the quantum dot device is directly installed on an LED. In particular, the durability of the quantum dot device is improved by maintaining a separation distance from the LED.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a Q-

The present invention relates to a light emitting device using a quantum dot that functions as a light converting element in which blue light emitted by a blue LED is converted from red to green into a long wavelength, .

Particularly, as an element suitable for a structure to be applied to a backlight of a liquid crystal display (Liquid Crystal Display), an LED which is a light source of a liquid crystal display is manufactured to be suitable for a direct-type backlight in which a plurality of light-

The quantum dot device refers to various compounds such as cadmium selenide indium phosphite, Cadmium Selenide Sulfide, and Cadmium Sulfide, which are several nanometers in size, and the photoluminescence effect is different depending on the size of the quantum dot.

The blue LED of blue light source is used to convert the blue light into the red and green light, and is used as a light source to emit a color by using a phenomenon that produces different fluorescence effects depending on the size of the quantum dot device.

Among them, the most widely used field in the application of the backlight of liquid crystal displays is the manufacture of a quantum dot sheet using quantum dots and mounting between a light guide plate and a prism sheet, When blue light is irradiated with a blue LED, when red light passes through a light guide plate, the red quantum dot and scattering go through the quantum dot sheet to be converted into red and diverged. When green quantum dots and scattering occur, they are converted to green and emit blue light. If scattering does not occur, blue light emits as is.

In the above-mentioned terms, the terms red and green quantum dots do not have red and green quantum dots but have a size such that the size of the quantum dots is a predetermined size of nano size and converted into red to green when scattered with blue light It makes sense.

Therefore, a combination of blue, green, and red, which is close to natural light, is possible with this combination.

In a liquid crystal display, such a combination of quantum dots can produce a color close to a wide range of natural light that conventional phosphors can not achieve.

The present invention can solve the problem of a structure applied to a liquid crystal display of a quantum dot sheet having a fluorescence characteristic in which a light wavelength using a quantum dot is changed, and can be applied to a direct-type backlight.

When applying the material of the quantum dot to the sheet, it is necessary to coat the film with the size suitable for the size of the display and make it into a sheet.

In this case, the amount of the quantum dots increases, the cost increases, and the thickness increases.

For example, a 60-inch TV has a screen size of about 133 centimeters by 75 centimeters.

It is about 9975 square centimeters in area.

In the production of a sheet using a quantum dot, the thickness of the quantum dot resin in which quantum dots are mixed with a resin is usually coated on the film to a thickness of 100 micrometers.

In sheet cut form, the amount of quantum dot resin required is 9975 X 0.01 cubic centimeters, so an amount of about 99.75 cubic centimeters is required.

It is estimated that the specific gravity of the quantum dot resin is generally 2, which is an approximate value of the specific gravity of the resin, and 200 grams of resin is required.

The price increases dramatically when the point where the quantum dot material is expensive is calculated.

Therefore, in order to solve this problem, the present invention uses direct quantum dot device for the LED of the direct-type backlight and solves the problem accompanying it.

Since the quantum dot device is a nanoparticle, it is vulnerable to water or oxygen.

Moreover, when blue light is strongly received, bleaching occurs which causes loss of properties.

Accordingly, in the present invention, the quantum dot device is directly used on the upper side of the LED, thereby preventing bleaching caused by blue light, and blocking the permeation of moisture and oxygen, thereby preventing denaturation of the quantum dot.

According to a preferred embodiment of the present invention to achieve the objects of the present invention, in the present invention, a direct quantum dot device is used at the upper part of the LED, while blitting due to blue light is prevented, So that denaturation of the quantum dots does not occur.

To this end, in the present invention, the Quantum Dot Device is fabricated into a laminated resin layer structure in which several resin layers of a three-dimensional structure are laminated, the outer periphery of the laminated resin layer is a protective resin layer, The stratum is a structure that becomes a resin layer mixed with the quantum dots.

Also, the resin layer is formed by molding, and a quantum dot device using one or more laminated resin layers is formed and separated into respective quantum dot devices.

In addition, the structure of the laminated resin layer quantum dot device formed by molding is curved so as to surround the upper surface of the LED.

Laminated resin layer made in a three-dimensional form such as a curved surface An air layer is formed between the bottom surface of the LED and the top surface of the LED facing the LED of the quantum dot device, so that the light density is reduced in the air layer to reach the quantum dot device The intensity of the blue light of the LED is dispersed according to the distance to weaken the light intensity so as to reach the quantum dot layer, thereby preventing the quantum dot from becoming bleaching.

Also, instead of the air layer, a diffusion layer for diffusing light is formed on a part or all of an interval between the LED and the quantum dot device so that light from the LED can be diffused evenly.

Also, in a three-dimensional form, it is possible to enclose a square at right angles, such as a rectangular parallelepiped, rather than a curved surface, or to enclose it like a polyhedron.

Alternatively, the surface of the silicon may be protected by a coating with a thermosetting or ultraviolet curing resin after being made into a laminated structure with a silicone resin.

Further, in order to increase the adhesion of the silicon layer using each of the laminated silicon resin (Silicone Resin), the silicon layer is laminated, and then the adhesive force capable of thermosetting or ultraviolet curing is enhanced A polymer resin such as urethane or acrylic may be coated.

In a liquid crystal display according to the present invention, as a structure of a quantum dot device using a layered silicon resin to be applied to a direct-type backlight, it is possible to manufacture a backlight with a minimum quantum dot while increasing the stability of the quantum dot.

In addition, it is possible to apply energy saving such as local dimming by applying the present invention to a direct type in which the LED is positioned below the liquid crystal display, away from the side-LED type sheet type quantum dot device using a light guide plate.

Fig. 1 shows a cross-sectional view of the structure of a liquid crystal display using a conventional quantum dot sheet.
Fig. 2 shows the structure of a direct-type backlight which is another type of backlight of a liquid crystal display.
Fig. 3 (a) is a cross-sectional view, and Fig. 3 (b) is a plan view as seen from the upper surface.
4 is a view showing a structure in which a quantum dot layer is formed on a structure of a lower curved surface protective layer.
5 shows a structure of the resin laminated curved type quantum dot device 501 according to the present invention in which a curved quantum dot layer is formed and then an upper transparent protective layer 502 is formed on a curved quantum dot layer.
6 shows a cross-sectional view of a side surface of the upper transparent protective layer 502 of the resin laminate-type curved-type quantum dot device 501, which is shown in Fig. 6 (a) ).
FIG. 7 is a cross-sectional view of a structure in which a quantum dot device is mounted in a state where an LED is mounted on a PCB substrate or the like.
8 is a cross-sectional view of a liquid crystal display using a direct-type backlight in which curved-surface type quantum dot devices according to the present invention are respectively mounted on a plurality of LEDs used as a light source of a direct-type backlight.
FIG. 9 shows the structure in which the curved quantum dot device according to the present invention is mounted on the LED, and the light emitted from the blue LED is converted into red light and green light.
FIG. 10 shows a structure in which a plurality of lower curved surface protection layers 301 of FIG. 3 are formed by molding at one time.
FIG. 11 shows a structure in which a quantum dot layer aggregate layer 1101 is formed on a lower curved protective layer assembly sheet 1001.
12 shows a structure in which the entire protective coating layer 1201 is formed on the quantum dot layer aggregate layer 1101 again.
13 shows a structure in which curved surface type quantum dot elements formed collectively are separated into individual quantum dot elements again.
Fig. 14 shows a structure for forming an additional coating layer as a barrier layer on the lower curved protective layer as a sectional view.
Fig. 15 shows a cross-sectional view of the structure of a stacked curved type quantum dot device formed by such a laminated structure.
FIG. 16 shows the structure of such a quantum dot-organic composite particle.
FIG. 17 shows the structure of a quantum dot device in which a quantum dot-organic composite particle in which red quantum dots are mixed and a red dot-shaped quantum dot layer in which green quantum dots are mixed is formed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under the above-mentioned rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

Fig. 1 shows a cross-sectional view of the structure of a liquid crystal display using a conventional quantum dot sheet.

1 (a) is a sectional view of a liquid crystal display including a backlight. The liquid crystal display 100 includes a liquid crystal display panel (LCD Panel) 101 and two normally-prism sheets 102a and 102b constituting a backlight The light guide plate 104 and the reflection sheet 105 are mounted on the lower portion of the quantum dot sheet and the LED light source 106 is mounted on the side face of the light guide plate.

Such a structure is disadvantageous in that the amount of quantum dots is increased because the system utilizing the quantum dots is a sheet type in which the back light is applied to a backlight using a light guide plate.

Furthermore, since the film surrounding the quantum dot layer needs to use a barrier film which is difficult to transmit moisture or oxygen, manufacturing cost increases.

Fig. 1 (b) shows the detailed structure of the quantum dot sheet.

In the quantum dot sheet 103, a quantum dot layer 109 is positioned between the barrier films 107, and a barrier layer 108 such as a SiO2 thin film is coated on the barrier film.

It is about 9975 square centimeters in area.

Therefore, a separate method is needed to solve this problem.

Fig. 2 shows the structure of a direct-type backlight which is another type of backlight of a liquid crystal display.

A direct-type backlight is a structure without a light guide plate, and a structure in which an LED is mounted on a lower portion of a liquid crystal display panel.

(a), the liquid crystal display 100 includes a liquid crystal display panel (LCD Panel) 101 and two normally arranged prism sheets 102a and 102b constituting a backlight, The LED 201 is mounted on the PCB 202 such as a PCB with an electrical connection.

As shown in FIG. 2 (b), a transparent lens 203 for diffusing light, which is generally emitted from the LED, is mounted on the upper portion of the LED 201 mounted on the substrate 202.

The present invention relates to a structure and a fabrication method of a quantum dot device suitable for a direct-type backlight of a liquid crystal display, and to a material to be used, and it is an object of the present invention to provide a quantum dot device capable of maintaining a distance from an LED, Thereby preventing the quantum dots from being denatured by bleaching.

In addition, it is intended to have the effect that the light diffused in the quantum dot device spreads in all directions with uniformity.

For this purpose, a gap is formed between the LED and the air layer, and a lower steric protection layer for supporting the quantum dots is formed while using a transparent or diffusion material.

The term " three-dimensional " means not having a planar structure such as a film or a sheet but having a polygonal structure such as hemispherical, semi-cylindrical or hexahedron.

A conventional quantum dot sheet is a two-dimensional planar structure (2 Dimensional, Planar) manufactured by coaching or the like.

According to the present invention, in a two-dimensional structure of a conventional quantum dot sheet system, a structure covering the entire backlight is formed, and the loss of the quantum dots is increased. However, in the three dimensional structure, Structure to minimize the amount of quantum dots used.

The three-dimensional structure of the present invention includes a structure in which a quantum dot layer such as a curved structure, a polygonal structure, a cylindrical structure or a hemispherical structure surrounds the LED and the LED and the quantum dot layer are separated from each other including the air layer.

The lower protective layer of the quantum dot is a quantum dot layer including quantum dots located on the upper surface of the LED and a lower protective layer is formed on the upper side of the LED and a quantum dot layer is formed thereon. .

The protective layer is attached to the quantum dot layer to support the quantum dot layer, and functions to suppress moisture and oxygen addition.

In the drawings of the present invention, the shape of the lower steric protective layer is described as an example of a curved surface. In the case of a curved surface, the lower steric protective layer may be referred to as a lower curved surface protective layer, but includes a steric structure such as a polygonal structure other than a curved surface.

As shown in FIG. 3, the lower steric protection layer for manufacturing a quantum dot device is formed by molding a lower curved protective layer having a curved shape in a three-dimensional shape.

Fig. 3 (a) is a cross-sectional view, and Fig. 3 (b) is a plan view as seen from the upper surface.

The lower curved surface protection layer 301 of the quantum dot device is composed of the curved surface structure portion 302 and the flat fixing portion 303.

A quantum dot layer is formed on the curved surface structure portion 302 of the lower curved surface protective layer and the flat fixing portion 303 is a portion to be fixed to the periphery of the LED with an adhesive or bolts on the substrate on which the LED is fixed.

A light diffusing gap 304 is formed in the lower part of the curved surface structure part 302 so as to cause light diffusion with a distance from the LED.

The separation distance simply becomes an air layer, and the light is diffused according to the distance from the LED to emit light, thereby reducing the density of the light. Alternatively, the scattering material may be filled with resin (Resin) You may,

In the present invention, the formation of the lower curved surface protective layer by molding generally means that the lower curved surface protective layer is formed of a plastic resin, a silicone resin, or a plastic film by injection molding, thermoforming, As shown in Fig.

In general, the molding of a plastic polymer resin is performed by injection molding.

Plastic materials are usually transparent acrylic materials or polycarbonate materials.

When the lower curved protective layer is produced by injection molding, the rigidity of the plastic can be maintained.

When a lower curved surface protective layer is formed by injection molding, a separate transparent hard coating layer can be formed with a UV light curable resin as a spray, SiO2, TiO2, Al2O3, or the like may be laminated in a single layer or multiple layers.

The metal oxide layer can function as a barrier layer to prevent reflection of light and penetration of moisture or oxygen.

In addition, thermoforming using a silicone resin (Silixone Resin) is performed by applying a liquid silicone resin to a mold having a predetermined shape and pressing it with an upper mold to heat the resin.

Silicone resin such as Dow Corning Inc. can be used. Silicone resin which is used for encapsulation of LED, solar cell encapsulant or the like can also be used.

When forming a lower curved surface protective layer using a silicone resin, a primer coating or the like can be additionally performed to increase the adhesion.

Alternatively, in the formation of the lower curved surface protective layer by molding, a film such as conventional PET can be thermoformed in a mold.

The barrier film may be used directly or may be coated by additional deposition method such as sputtering of metal oxide or ebeam evaporation.

SiO2, TiO2, or a metal oxide such as Al2O3 prevents permeation of oxygen or water.

The reason why the portion of the lower curved surface protective layer to be formed with the quantum dot layer is formed by the curved surface structure is that the quantum dot layer formed at the curved surface structure is also formed along the curved surface to increase the uniformity of light from the LED to reach the quantum dot layer .

It is also possible to maintain the distance from the LED to be constant or to calculate the distance from the LED to different distances.

For example, the upper surface from the center of the LED may have a higher density of light, and the peripheral portion may be closer to the distance, so that the shape of the curved surface may be differently formed according to the density of light from the LED.

The reason why the lower curved surface protective layer is the protective layer is that the lower curved surface protective layer functions to protect the upper quantum dot layer by blocking permeation of moisture or oxygen.

The function of protecting the quantum dots is as described in the above-mentioned invention. In the case of plastic injection molding, a polymer resin coating and a metal oxide coating on the upper part function as a barrier, or a silicone resin having hydrophobic property, moisture penetration, Molding, or a method in which a plastic film such as a PET film, a urethane film, an acrylic film, or a polycarbonate film is directly molded and used.

In addition to a simple curved surface structure, the lower curved surface protection layer has a gap with the LED, and various curved surfaces and polygonal structures including a lens shape are possible.

In addition to the transparent material, the lower curved protective layer may be formed by mixing a scattering agent such as PMMA microbeads having a size of several tens of nanometers to several micrometers so as to have light scattering and diffusing effect.

Alternatively, a resin with a diffusing agent may be coated on one surface of the lower curved surface protective layer to cause diffusion of incident light.

The protective layer referred to as a curved surface protective layer means a three-dimensional structure that is formed in a curved shape. The protective layer has a function of supporting and supporting a quantum dot layer and a barrier function. The protective layer is located under the quantum dot layer, Shaped structure.

4 is a view showing a structure in which a quantum dot layer is formed on a structure of a lower curved surface protective layer.

A curved quantum dot layer 401 is formed on the upper surface of the curved surface structure portion 302 of the lower curved surface protective layer 301 along the curved surface of the curved surface structure portion.

(a) is a cross-sectional view thereof and (b) is a plan view seen from above.

The quantum dot layer is a structure in which quantum dots are mixed with a polymer resin or a silicone resin (Siicone Resin).

(c) is an enlarged structural view of the quantum dot layer.

The quantum dot layer 401 is prepared by mixing a liquid polymer resin or a silicone resin or a resin including the polymer resin and a silicone resin and then curing the resin material to form a quantum dot layer 403 on the resin 402. [ This is a mixed structure.

The urethane resin may be a urethane resin, an acrylic resin, or the like.

As the silicone resin, a resin such as an LED sealing material made by Dow Corning Corporation or the like can be used as a resin made on the basis of silicone, and a resin having high moisture permeation resistance or high oxygen permeation protection degree can be used.

Or a resin in which an organic polymer resin and a silicone resin are mixed or chemically bonded can be used

The quantum dot can be formed in the resin layer by mixing the red quantum dot and the green quantum dot in the resin in proportions.

The thickness of the quantum dot layer can be varied from 10 micrometers to 200 micrometers.

The method of forming the curved quantum dot layer on the lower curved protective layer is to mix the quantum dots with a liquid polymer resin or a silicone resin and then apply it on the lower curved protective layer, To form the shape of the curved quantum dot layer.

In this process, if the liquid curing method for solidifying the liquid resin is such that the temperature is raised and the cured resin is cured by heating, the curing is performed by raising the temperature of the mold, and curing is performed by methods such as ultraviolet curing, room temperature natural curing and epoxy curing.

The formation of a curved quantum dot layer on a curved surface structure on the lower curved protective layer is performed by setting the distance from the LED to the quantum dot to be constant or changing the distance from the quantum dot with the intensity of light intensity from the LED It is possible to have a curved surface that changes.

For example, if the front angle at which the light is emitted from the LED is 0 degree, the intensity of the LED light at the 0 degree is the highest, and the light amount becomes weaker when the angle is increased.

Accordingly, the variation of the curvature according to the intensity of the light can cause the quantum dots of the curved quantum dot layer to have uniform intensity of light and scattering.

4D, the distance from the LED 201 to the curved quantum dot layer 401 is longer than the distance 405 to the side that is perpendicular to the LED. have.

This is because the intensity of the light ascending from the LED to the right angle 404 has more light intensity than the angle of the oblique angle 405.

As the quantum dot layer covering the upper surface with such an LED has a curved surface structure of a curved quantum dot layer, it is possible to efficiently design the light amount distribution of the LED, improve the durability of the quantum dot, and improve the efficiency of the light conversion characteristic.

Also, the thickness of the quantum dot layer is formed differently depending on the position of the curved surface, so that scattering according to the amount of light can be uniformly performed.

Structure of the quantum dot layer In addition to a simple curved surface structure, various curved surfaces and polygonal structures including a lens shape are possible.

What is referred to as a curved quantum dot layer in the above is an example of a three-dimensional structure, which means that it is made in the shape of a curved surface, and is a structure formed by covering the shape of a three-dimensional lower protective layer.

5, a curved quantum dot layer 401 is formed on a lower curved surface protective layer 301, and a curved surface type quantum dot layer 401 is formed on a lower curved surface protective layer 301, And the upper transparent protective layer 502 is formed on the quantum dot layer.

The material of the upper protective transparent layer may be a polymer resin, a silicone resin, or a method in which the film is formed and adhered with an adhesive.

(a) is a cross-sectional view, and (b) is a plan view as seen from above.

In the method of forming the upper transparent protective layer, when a polymer resin or a silicone resin is used, a liquid resin is coated on the curved quantum dot layer 401 and pressure is applied to the mold to form a shape.

Alternatively, a liquid resin may be applied by a spray method or the like.

Various methods such as thermal curing or room temperature curing can be used for curing the liquid resin.

The upper transparent protective layer is advantageous to have a curved surface, but various structures such as polygonal shapes can be produced depending on the structure.

6 shows a cross-sectional view of a side surface of the upper transparent protective layer 502 of the resin laminated curved quantum dot device 501 in a rectangular shape and a cross-sectional view in which the lower curved surface protective layer 301 is polygonal (a ), And the plan view is shown in (b), which is a round shape.

Thus, the upper transparent protective layer and the lower protective layer can have various curved and polygonal structures including a lens shape.

In addition, the upper transparent protective layer and the lower curved protective layer can be made to have light scattering and diffusing effects by mixing PMMA beads of several micrometers in size, scattering agents, and the like.

FIG. 7 is a cross-sectional view of a structure in which a quantum dot device is mounted in a state where an LED is mounted on a PCB substrate or the like.

As shown in the drawing, the resin layered curved type quantum dot device 501 is mounted on the upper part of the substrate 202 while the LED 201 is electrically connected to the substrate 202 by soldering or the like Structure.

The flat fixing portion 303 of the lower curved surface protective layer 301 of the quantum dot device is bonded to the substrate 202 with the adhesive 703. [

In this structure, the blue light emitted from the LED 201 is partially scattered from the red to green quantum dots in the curved quantum dot layer, resulting in wavelength conversion from red to green, so that red light or green light is emitted And blue light is emitted if scattering does not occur.

8 is a cross-sectional view of a liquid crystal display using a direct-type backlight in which curved-surface type quantum dot devices according to the present invention are respectively mounted on a plurality of LEDs used as a light source of a direct-type backlight.

(a) and an enlarged cross-sectional view of (b), the liquid crystal display 100 includes a liquid crystal display panel (LCD Panel) 101 and two normally-prism sheets 102a, 102b And a plurality of LEDs 201 mounted on the lower portion of the prism sheet are electrically connected to a substrate 202 serving also as a reflector function and the laminated curved quantum dot device 501 according to the present invention is formed on each of the LEDs. .

According to this structure, in the direct-type backlight, a structure in which a curved-surface type quantum dot device including quantum dots that convert light into red and green on each blue LED is mounted, thereby using the quantum dot sheet in the backlight method using the conventional light guide plate A much smaller amount of quantum dots can be used.

As an example, in a 60-inch liquid crystal display, in a sheet method, a quantum dot sheet having an area of about 9975 square centimeters in an area of about 133 centimeters by 75 centimeters in size, , A coating of a thickness of 0.01 centimeter requires a volume of about 99.75 cubic centimeters of quantum dots and a volume of about 200 grams of quantities of resin containing quantum dots between 100 and 300 grams .

The amount of the resin containing the quantum dots actually required may vary depending on the design of the liquid crystal display, but a quantum dot resin corresponding to the entire area of the display is required, and therefore, a quantum dot resin which is applied to a wide area quantum dot sheet is required.

In the curved-type quantum dot device according to the present invention, only a quantum dot device corresponding to each LED required for a direct-type backlight is required.

In this case, about 100 LEDs are used in a 60-inch liquid crystal display, and the amount of resin including quantum dots calculated by 100 LEDs is required to be in the form of a stacked curved quantum dot device to be applied to each LED When a hemispherical shape having a diameter of 1 centimeter is designed to require a quantum dot resin having a surface area of about 1.5 square centimeters, a resin containing a quantum dot having an area of 150 square centimeters is required for 100 LEDs, and a resin having a volume of 0.01 centimeter When applied in thickness, the amount of resin containing the quantum dots of 1.5 cubic centimeters in volume is required.

This requires only about a few tens of minutes compared to the amount of resin containing a quantum dot of about 99.75 cubic centimeters in volume in the case of a sheet of backlight using a light guide plate.

This is a price competitiveness that can not be compared.

Although the above calculations will vary a lot depending on the design of the manufacturer, the quantum dots according to the present invention consume much less amount than the seat type of the present invention, and thus have a competitive price.

In the above-mentioned term, the resin containing the quantum dot means that the quantum dot is a nanometer-sized particle, so it is mixed with a liquid polymer resin or a silicone resin (Silicone Resin) and coated on a film or the like. I will.

FIG. 9 shows the structure in which the curved quantum dot device according to the present invention is mounted on the LED, and the light emitted from the blue LED is converted into red and green.

The blue light 901 emitted from the LED 201 in the cross-sectional view is scattered in the curved quantum dot layer 401 with some red quantum dots and partly scattered with the green quantum dot, The red light 904 to the green light 902 diverge while the scattering occurs, and the blue light 903 diverges when scattering does not occur.

In the above structure, a single curved quantum dot layer is mixed with quantum dots converted into red light and quantum dots converted into green so that a single layer converts the light into red or green light.

In the present invention, the spacing distance allowing the light to diffuse from the LED 201 to the curved quantum dot layer 401 causes the blue light to diffuse as it passes through the spacing distance, Is weakened.

Since the intensity of light is proportional to one-half of the distance, the density of light is about 100 times greater when the distance from the LED to the curved quantum dot layer is 1 millimeter or 1 centimeter.

Therefore, as the intensity of light reaching the quantum dots decreases, the lifetime of the quantum dots increases.

Accordingly, the durability of the quantum dot device is increased according to the spacing distance according to the present invention.

The separation distance portion can be formed simply as an air layer.

That is, the lower curved surface protection layer of the lower portion of the quantum dot device is shaped to have a curved surface, and an air layer is formed thereunder.

Alternatively, a polymer or a silicone resin may be filled in the distance portion, or a diffusing micro bead such as a PMMA bead having a size of several micrometers may be mixed with the resin.

Or a structure in which the micro-beads are directly mixed with the lower curved protective layer, or the like, can be scattered on the lower curved protective layer.

In the above structure, the stacked curved type quantum dot device is advantageous in that a plurality of devices can be manufactured at a time.

This is because the basic manufacturing process is a molding process, so that a plurality of devices are manufactured at a time through a mold operation.

FIG. 10 shows a structure in which a plurality of lower curved surface protection layers 301 of FIG. 3 are formed by molding at one time.

A lower curved surface protection layer assembly sheet 1001 in which a plurality of lower curved surface protection layers 301 are connected to each other as shown in a plan view (a) and a sectional view (b).

The lower curved protective layer assembly sheet means that a plurality of lower curved protective layer structures are formed on the mold for molding and the lower curved protective layer structure is connected to the lower curved protective layer so that a plurality of lower curved protective layers are arranged And the sheet is formed as a single sheet.

The method of manufacturing the lower curved surface protective layer assembly sheet is a method of forming the lower curved surface protective layer using a molding method such as plastic insert molding of a plastic such as polycarbonate or a liquid silicone material, Or a film forming method in which a curved layer is formed by applying heat and pressure to a mold such as a PET film or the like.

Particularly, the present invention explains a structure in which a PET film that is easy to manufacture is molded, but can be applied to the production of a lower curved protective layer even in use of other molding methods and materials.

PET (Polyethylene Terephthalate) film is widely used for barrier film, and it is possible to use high transparency film.

In order to manufacture the lower curved surface protective layer, a PET sheet is inserted into a mold, and a pressure is applied at a temperature of about 100 to 150 degrees, depending on conditions, and molding is performed according to the shape of the mold.

The thickness of the PET sheet can range from 25 microns to hundreds of microns, typically from 50 microns to 200 microns.

The size of the curved portion of the lower curved protective layer is approximately 5 mm to 30 mm in width D and the height H is in the range of 2 mm to 20 mm in the dimension display shown in the sectional view of (c) .

The size of the lower curved protective layer is determined by the size of the LED and the light intensity of the LED.

FIG. 11 shows a structure in which a quantum dot layer aggregate layer 1101 is formed on a lower curved protective layer assembly sheet 1001.

The quantum dot layer aggregation layer 1101 is formed by forming a plurality of individual quantum dot layers 401 on the upper portion of the lower curved surface protective layer assembly sheet 1001 as shown in the plan view (a) and the sectional view (b) Quot;

(c), the quantum dot layer 401 is formed on the individual lower curved surface protection layer 301.

The thickness of the quantum dot layer is formed to be several tens of micrometers to several hundreds of micrometers depending on the density of the quantum dots and the light conversion efficiency.

As a method of forming the quantum dot layer on the lower curved protective layer set sheet, a method of applying the liquid quantum dot mixed resin (Resin) on the lower curved protective layer set sheet and solidifying it in the mold through molding can be used.

The resin for mixing the quantum dots can be obtained by mixing silicone resin (Silicone Resin) such as Dow Corning or the like and mixing them with quantum dots, or by mixing acryl resin, urethane resin, epoxy resin, It can be used as a solidified liquid resin (liquid resin) to be mixed.

The solidified liquid resin has the characteristics of a liquid and means a resin that is solidified by heat, ultraviolet ray, drying at room temperature, pressure, or the like.

12 shows a structure in which the entire protective coating layer 1201 is formed on the quantum dot layer aggregate layer 1101 again.

The entire protective coating layer 1201 is formed on the quantum dot layer aggregate layer 1101 as shown in plan view (a) and sectional view (b).

The entire protective coating layer 1201 is generally coated with a UV curable resin or the like by a spray coating method, and may be formed by molding using a mold.

(c) shows a single quantum dot device, a curved quantum dot layer 401 is formed on a lower curved protective layer 301, and an upper transparent protective layer 502 is formed on a curved quantum dot layer Layer type curved-surface type quantum dot device.

13 shows a structure in which curved surface type quantum dot elements formed collectively are separated into individual quantum dot elements again.

As shown in plan view (a) and cross-sectional view (b). Layered curved-type quantum dot device 501 is formed as an individual device.

The stacked curved quantum dot device has a curved surface structure in which a curved quantum dot layer 401 is formed on a lower curved surface protective layer 301 and then an upper transparent protective layer 502 is formed on a curved quantum dot layer It becomes a structure.

As described above, by using a manufacturing process in which a plurality of devices are collectively formed in a plurality of aggregate types at one time and then separated into individual stacked curved quantum dot devices, mass production can be enhanced and manufacturing costs can be reduced.

An advantage of the structure according to the present invention is that it is possible to easily form an additional auxiliary layer for each layer in the layered structure.

Quantum dots are susceptible to moisture and oxygen, so that the penetration of moisture and oxygen should be suppressed as much as possible.

Therefore, an additional barrier layer may be required depending on the use of the quantum dot layer.

Fig. 14 shows a structure for forming an additional coating layer as a barrier layer on the lower curved protective layer as a sectional view.

(a) is a cross-sectional view of the lower curved protective layer assembly sheet 1001 in which a plurality of lower curved surface protective layers 301 are connected to each other.

(b) shows an additional coating layer 1401 formed as a barrier layer on the upper surface of the lower curved protective layer assembly sheet.

Organic materials such as EVOH (Ethylene Vinyl Alcohol) or PVDC (Polyvinylidene Chloride) are used as a coating material having barrier properties as a organic material which suppresses the permeation of water (water vapor) and oxygen through the coating, It can be used as a coating agent.

In addition, an inorganic material, an organic material, or an organic material and a mixture of materials having a barrier property may be used as a coating.

As inorganic materials, silicate materials may be mixed with organic materials.

Barrier characteristics are usually measured by values such as MVTR (Moisture Vapor Transmission Ratio) and OTR (Oxygen Transmission Ratio). The lower the value, the higher the barrier property.

Typically, PET films or polycarbonate plastics have their own barrier properties, but when reinforced they coat materials with additional barrier properties.

(c), an additional coating layer 1401 is formed as a barrier layer on the upper surface of the lower curved protective layer assembly sheet, and then the quantum dot layer aggregate layer 1101 is formed by molding or the like.

As a method of forming the quantum dot layer, a method of applying a liquid quantum dot mixed resin (Resin) on the lower curved protective layer set sheet and solidifying it in a mold through molding can be used.

(d) is a structure in which the entire protective coating layer 1201 is formed on the quantum dot layer aggregate layer 1101 again.

The entire protective coating layer may be coated with a single layer of a coating material having an organic material barrier property such as EVOH (Ethylene Vinyl Alcohol) or PVDC (Polyvinylidene Chloride), or may be coated with a material having different permeability and oxygen permeability May be formed in multiple layers.

Therefore, EVOH and PVDC can be alternately coated, or ultraviolet curing resin can be coated or hydrophobic coated.

With this structure, the barrier function to prevent penetration of water or oxygen can be improved by coating with the lamination.

In addition to the coating described above, organic and inorganic thin films can be mixed by lamination.

As the inorganic thin film, a SiO2 thin film can be used as a typical example, and the thickness of the SiO2 thin film can be coated according to the required barrier function from several nanometers to several hundred nanometers, and as the coating thickens, Barrier function is improved.

The inorganic thin film is coated on the upper surface of the lower curved surface protective layer or on the upper surface of the quantum dot layer to enhance the barrier function.

Since the thickness of the inorganic thin film is usually formed as a thin film ranging from several tens of nanometers to several hundreds of nanometers, the smoothness of the coated surface is important.

Therefore, generally, an acrylic or urethane-based transparent ultraviolet curing resin is coated by a spray method or the like before the inorganic thin film coating.

The thickness of the flat layer formed by ultraviolet curable resin or the like is several micrometers to tens of micrometers.

In addition, in order to protect the inorganic thin film after coating with an inorganic thin film, an acrylic or urethane-based transparent ultraviolet hardening resin is coated by a spray method or the like.

The thickness of the inorganic thin film protective layer formed by ultraviolet curing resin or the like is several micrometers to tens of micrometers.

Fig. 15 shows a cross-sectional view of the structure of a stacked curved type quantum dot device formed by such a laminated structure.

Sectional view (a) shows the structure of the lower curved surface protection layer 301 according to the present invention.

The lower curved surface protective layer can be formed by molding or the like by applying pressure at a temperature of 100 degrees or more of a transparent or diffusing PET film, and it is possible to form a polycarbonate resin or the like by injection molding. In addition, It can be produced by plastic resin molding.

The thickness of the lower curved protective layer is from several tens of micrometers to several millimeters.

(b) shows a structure in which a flat layer 1501 is formed on the lower curved surface protective layer.

The flat layer is usually coated with an ultraviolet ray hardening resin, a thermosetting resin or a solvent hardening type resin by a spray method.

The thickness of the planar layer is between several micrometers and tens of micrometers, and is generally about 10 micrometers.

The resin of the flat layer uses a lot of acryl or urethane type.

This is because the flat layer minimizes surface roughness by lowering the surface roughness to at least a few tens of nanometers or less.

In general, the surface to be formed by molding, such as the lower curved surface protection layer, is not suitable for finely mirror surface processing so that the metal surface of the metal mold used for molding can have an illuminance of several tens of nanometers to several nanometers.

Therefore, a fine mirror surface is formed by an additional spray method.

(c), an inorganic thin film 1502 is coated on the flat layer.

The inorganic thin film is usually coated with SiO2 and has a thickness of several tens of nanometers to several hundreds of nanometers.

Since the thickness of the inorganic thin film layer 1502 is from several tens of nanometers to several hundreds of nanometers, the surface roughness of the flat layer 1501 should be adjusted from several nanometers to several tens of nanometers.

Generally, the inorganic thin film is used to enhance the barrier function because it has a high barrier function to inhibit permeation of oxygen or moisture.

(d) is a sectional view in which a protective coating layer 1503 for protecting the inorganic thin film is formed.

A protective coating layer may be further coated to prevent the inorganic thin film from being damaged by scratches or the like.

The thickness of the protective coating layer ranges from a few micrometers to a few tens of micrometers and is typically about 10 micrometers.

As the resin of the protective coating layer, a lot of acryl or urethane type is used.

(e), a curved quantum dot layer 401 is formed on the protective coating layer.

The urethane resin may be a urethane resin, an acrylic resin, or the like.

(f), a flat layer 1504 is formed on the curved quantum dot layer.

The resin of the flat layer uses a lot of acryl or urethane type.

This is because the flat layer minimizes the surface roughness by reducing the surface roughness to at least a few tens of nanometers or less.

(g), an inorganic thin film 1505 is coated on the flat layer.

(h) shows a cross-sectional view in which a protective coating layer 1506 for protecting the inorganic thin film is formed.

The fabrication of a stacked curved type quantum dot device having a three-dimensional structure in which a plurality of the above layers are formed by lamination can protect quantum dots and can be mounted on each of the LEDs, thereby maintaining a cost advantage.

Generally, a quantum dot to be mixed in a quantum dot layer in a structure in which a quantum dot is mixed with a resin is a quantum dot having a size of several nanometers and directly mixed with a resin.

However, it is not easy to uniformly mix quantum dots of several nanometers in size with a liquid resin.

Therefore, a quantum dot-organic composite particle made of a plurality of quantum dots mixed with an organic material is manufactured and mixed with a resin to form a curved quantum dot layer .

The size of the quantum dot-organic composite particle can be made from several hundred nanometers to tens of micrometers.

For example, when the number of quantum dots contained in a particle is approximated, the size of the quantum dots is 10 nanometers and the distance between the quantum dots is 10 nanometers , When one side is calculated as a square of 1 micrometer, 125,000 quantum dots are included in the quantum dot-organic composite particle.

Therefore, in the case of a quantum dot-organic composite particle of several micrometers in size, it usually includes hundreds of thousands to several million quantum dots.

The organic material of the quantum dot-organic composite particles can be an organic polymer, and various types of organic polymers such as acryl-based, urethane-based and ethylene-based organic polymers can be used.

Or inorganic polymers such as silicon (Silicone) may be mixed or chemically bonded to each other, or a variety of polymers such as a polymer in which an organic polymer and an inorganic polymer are chemically bonded may be used.

Therefore, since silicon is an inorganic substance, when it is manufactured using a resin such as silicon, it becomes a quantum dot-inorganic composite particle.

Since the quantum dot-organic composite particle or the quantum dot-inorganic composite particle includes hundreds of thousands to millions of quantum dots, the quantum dot-organic composite particle or the quantum dot-inorganic composite particle is collectively referred to as a composite of a plurality of quantum dots It may be collectively referred to as a quantum dot aggregate composite particle which is a particle in the form of aggregated quantum dots formed in the form of particles.

FIG. 16 shows the structure of such a quantum dot-organic composite particle.

(a) shows a green quantum dot 1601-g which is converted into green as a conventional quantum dot, and the particles are shown in the form of quantum dot-organic composite particles 1603.

The quantum dot-organic composite particle 1603 contains a quantum dot 1601 and is mixed with the organic polymer 1602 supporting the quantum dot-organic composite particle 1603.

(b) shows a red quantum dot-organic composite particle 1603 in which a red quantum dot 1601-r, a red quantum dot and an organic polymer are mixed.

(c) is a schematic diagram in which a structure in which a quantum dot and an organic polymer are mixed is shown. The structure in which the quantum dots 1601 are surrounded by the organic polymer 1602 while the organic polymer supports the quantum dots is shown. And becomes a quantum dot-organic composite particle with a size of several micrometers.

A method of mixing particles of quantum dots with organic polymers is generally performed by mixing organic polymers and quantum dots in a solvent while evaporating the solvent and granulating the organic polymer and quantum dots together.

In this case, the particle size depends on the dispersing agent, the surface modifier (surfactant), the evaporation rate of the solvent, and the like.

FIG. 17 shows the structure of a quantum dot device in which a quantum dot-organic composite particle in which red quantum dots are mixed and a red dot-shaped quantum dot layer in which green quantum dots are mixed is formed.

As shown in FIG. 5A, the laminated curved-type quantum dot device 501 is formed by mixing a red quantum dot-organic composite particle and a green quantum dot-organic composite particle with a resin on a lower curved protective layer 301 to form a curved quantum dot layer 401 are formed, and the upper transparent protective layer 502 is formed on the green curved quantum dot layer.

As shown in the enlarged view in (b) of the drawing, a quantum dot layer 1603-g having a structure in which red quantum dot-organic composite particles 1603-r and green quantum dot-organic composite particles 1603- And each of them is a quantum dot-organic composite particle in which a red quantum dot 1601-r and a green quantum dot 1603-g are mixed.

As in this structure, the quantum dot-organic composite particles are mixed with a liquid silicone resin or a polymer resin and then cured again to form a curved quantum dot layer, The acidity can be increased and the process can be stabilized.

Typically, dispersing nanometer sized particles is much more difficult than dispersing micrometer sized particles, thus increasing the degree of difficulty of the process.

Therefore, by using the quantum dot-organic composite particles having a size of several micrometers, it is possible to easily mix the silicone resin, the polymer resin, and the quantum dot-organic composite particles and to improve the stability of the quality in the fabrication of the curved surface layered quantum dot device according to the present invention .

In the above structure, a quantum dot layer using red quantum dot-organic composite particles and a quantum dot layer using green quantum dot-organic composite particles are separated. However, the red quantum dot-organic composite particles and the green quantum dot- May be mixed at a constant ratio and dispersed in the resin to form a single quantum dot layer.

In this structure, a quantum dot device can be manufactured as a single quantum dot layer.

Further, in the above structure, a quantum dot-organic composite particle using a red quantum dot and a quantum dot-organic composite particle using a green quantum dot are separately fabricated in the production of a quantum dot-organic composite particle in a resin laminate type quantum dot device , And red quantum dots and green quantum dots can be mixed together in a single quantum dot-organic composite particle in proportions.

In this case, it is also possible to produce a curved quantum dot layer using quantum dot-organic composite particles in a single structure.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof,

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the following claims.

Liquid crystal display (100) Liquid crystal display panel (101)
The prism sheets 102a, 102b, the quantum dot sheet 103,
Light guide plate 104 Reflective sheet 105 LED light source 106
Barrier film 107 Quantum dot layer 109 Barrier layer 108
LED 201 substrate 202 transparent lens 203 lower curved surface protection layer 301
The curved surface structure portion 302 and the flat fixing portion 303,
Light Diffusion Gap (304)
A quantum dot layer 401, a resin 402, a quantum dot 403,
The distance 405 to the side of the distance 404 at the right-
The upper transparent protective layer 502 on the resin laminated curved-type quantum dot device 501,
Adhesive (703) Blue light (901) Red light (904) Green light (902) Blue light (903)
Lower Curved Surface Protective Layer Assembly Sheet (1001) Quantum dot layer assembly layer (1101)
The entire protective coating layer 1201, the additional coating layer 1401,
The upper flat layer 1501 of the lower curved surface protection layer,
Inorganic Thin Film (1502) Protective Coating Layer (1503) Flat Layer (1504) Inorganic Thin Film (1505) Protective Coating Layer (1506)
Green Quantum Dots (1601-g) Qdot-Organic Material Composite Particles (1603) Organic Polymer (1602)
The red quantum dots 1601-r and the red quantum dot-organic composite particles 1603,

Claims

As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
Forming a resin in which quantum dots are dispersed in a quantum dot layer having a three-dimensional structure,
A lower protective layer having a three-dimensional structure for supporting the quantum dot layer is formed under the quantum dot layer,
Wherein the quantum dot layer has a structure in which a transparent protective layer covering the quantum dot layer of a three-dimensional structure is formed on the upper portion of the quantum dot layer.

The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
In a resin (Resin) in which quantum dots are mixed and dispersed,
The kind of the resin includes an organic polymer resin including an organic polymer resin including acrylic and a urethane, or a silicone. The resin includes a compound of an organic polymer resin and an inorganic polymer resin. Lt; / RTI >

The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure in which the resin is molded into a three-dimensional shape,
The three-dimensional structure of the quantum dot device is fixed to the periphery of the LED of the substrate on which the LED is mounted,
The three-dimensional structure of the quantum dot device is surrounded by the periphery of the LED,
And a distance from the light emitting portion of the LED to the quantum dot device.

The method of claim 3,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
A three-dimensional structure of a quantum dot device is fixed to the periphery of an LED of a substrate on which the LED is mounted,
The three-dimensional structure of the quantum dot device is surrounded by the periphery of the LED,
Since there is a distance from the light emitting portion of the LED to the quantum dot device,
And an air layer is formed on a portion of the LED that is spaced from the light emitting portion to the quantum dot device.

The method of claim 3,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
The three-dimensional structure of the quantum dot device is fixed to the periphery of the LED of the substrate on which the LED is mounted,
The three-dimensional structure of the quantum dot device is surrounded by the periphery of the LED,
Since there is a distance from the light emitting portion of the LED to the quantum dot device,
A quantum dot device having a three-dimensional structure, wherein a resin layer or a transparent lens including a diffusing agent is mounted on all or a part of a portion of the LED that is spaced from the light emitting portion to the quantum dot device.

The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
A plurality of quantum dots are formed in the form of quantum dot aggregates (particles) obtained by curing an organic material or an inorganic material,
A quantum dot device having a three-dimensional structure, characterized in that quantum dot aggregation particles are dispersed in a resin.

The method of claim 6,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
In a structure in the form of quantum dot aggregated particles (particles) in which a plurality of quantum dots are cured by mixing with an organic material or an inorganic material,
The quantum dot cluster particle is a structure in which particles containing only green quantum dots and particles containing only red quantum dots are separately produced,
Wherein the quantum dot set particle includes a structure in which each quantum dot set is directly prepared by mixing a green quantum dot and a red quantum dot.

The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
The protective layer having a three-dimensional structure is first formed as transparent or light diffusing plastic,
Forming a quantum dot layer on the protective layer,
And a protective coating layer is formed on the quantum dot layer.

The method of claim 8,
The protective layer formed on the upper surface and the lower surface of the quantum dot device having a curved surface structure is formed by molding a transparent or light diffusing plastic film containing a PET film, a urethane film, an acrylic film or a polycarbonate film Quantum dot device with three dimensional structure.

The method of claim 8,
Wherein the organic coating layer or the inorganic thin film layer in which a transparent organic coating layer or a diffusing agent is mixed is formed as a single layer or a laminate layer in addition to the protective layer formed on the top and bottom surfaces of the quantum dot device having a curved surface structure.

10. The method according to any one of claims 1 to 8,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
Dimensional quantum dot device having a three-dimensional structure in which a plurality of quantum dot devices having a three-dimensional structure are connected to each other.

10. The method according to any one of claims 1 to 8,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure in which the resin is molded into a three-dimensional shape,
Wherein the three-dimensional shape includes a semi-spherical shape or a semicylinder shape or a polygonal shape.