KR20170015831A - Qusntum Dot Light Conversion Device - Google Patents

Qusntum Dot Light Conversion Device

Info

Publication number
KR20170015831A
KR20170015831A KR1020150109258A KR20150109258A KR20170015831A KR 20170015831 A KR20170015831 A KR 20170015831A KR 1020150109258 A KR1020150109258 A KR 1020150109258A KR 20150109258 A KR20150109258 A KR 20150109258A KR 20170015831 A KR20170015831 A KR 20170015831A
Authority
KR
South Korea
Prior art keywords
quantum dot
resin
curved surface
curved
layer
Prior art date
Application number
KR1020150109258A
Other languages
Korean (ko)
Inventor
박철
Original Assignee
(주)이노큐디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)이노큐디 filed Critical (주)이노큐디
Priority to KR1020150109258A priority Critical patent/KR20170015831A/en
Publication of KR20170015831A publication Critical patent/KR20170015831A/en

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S10/00—Lighting devices or systems producing a varying lighting effect
    • F21S10/02—Lighting devices or systems producing a varying lighting effect changing colors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

The present invention relates to a device using a quantum dot having a nanometer size that converts blue light into green or red light. The present invention relates to a quantum dot device which is mounted on an LCD display to increase light efficiency and enables conversion of light close to natural color. It is possible to directly mount a quantum dot device on the LED, thereby forming an efficient quantum dot device. In particular, a distance from the LED is maintained to improve the durability of the quantum dot device.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a Q-

The present invention relates to a photoconversion device using quantum dots which function as a photoconversion device in which the wavelength of light is changed from red to green by a blue LED to a long wavelength.

Particularly, as an element suitable for a structure to be applied to a backlight of a liquid crystal display (Liquid Crystal Display), an LED which is a light source of a liquid crystal display is manufactured to be suitable for a direct-type backlight in which a plurality of light-

The quantum dot device refers to various compounds such as cadmium selenide indium phosphite, Cadmium Selenide Sulfide, and Cadmium Sulfide, which are several nanometers in size, and the photoluminescence effect is different depending on the size of the quantum dot.

By using the phenomenon that gives different fluorescence effects according to the size of the quantum dot device, it is used as a light source which converts blue light into red and green by using blue light source of blue light source and emits color.

Among them, the most widely used field in the application of the backlight of liquid crystal displays is the manufacture of a quantum dot sheet using quantum dots and mounting between a light guide plate and a prism sheet, When blue light is irradiated with a blue LED, when red light passes through a light guide plate, the red quantum dot and scattering go through the quantum dot sheet to be converted into red and diverged. When green quantum dots and scattering occur, they are converted to green and emit blue light. If scattering does not occur, blue light emits as is.

In the above-mentioned terms, the terms red and green quantum dots do not have red and green quantum dots but have a size such that the size of the quantum dots is a predetermined size of nano size and converted into red to green when scattered with blue light It makes sense.

Therefore, a combination of blue, green, and red, which is close to natural light, is possible with this combination.

In the liquid crystal display, the light combination of such quantum dots can produce a color close to a wide range of natural light that conventional phosphors can not achieve.

The present invention is intended to solve the problem of the structure applied to a liquid crystal display of a sheet having a light wavelength conversion fluorescent property using a quantum dot and to be applied to a direct-type backlight.

When applying the material of the quantum dot to the sheet, it is necessary to coat the film with the size suitable for the size of the display and make it into a sheet.

In this case, the amount of the quantum dots increases, the cost increases, and the thickness increases.

For example, a 60-inch TV has a screen size of about 133 centimeters by 75 centimeters.

It is about 9975 square centimeters in area.

In the production of a sheet using a quantum dot, the thickness of the quantum dot resin in which quantum dots are mixed with a resin is usually coated on the film to a thickness of 100 micrometers.

In sheet cut form, the amount of quantum dot resin required is 9975 X 0.01 cubic centimeters, so an amount of about 99.75 cubic centimeters is required.

It is estimated that the specific gravity of the quantum dot resin is generally 2, which is an approximate value of the specific gravity of the resin, and 200 grams of resin is required.

The price increases dramatically when the point where the quantum dot material is expensive is calculated.

Therefore, in order to solve this problem, the present invention uses direct quantum dot device for the LED of the direct-type backlight and solves the problem accompanying it.

Since the quantum dot device is a nanoparticle, it is vulnerable to water or oxygen.

Moreover, when blue light is strongly received, bleaching occurs which causes loss of properties.

Accordingly, in the present invention, the quantum dot device is directly used on the upper side of the LED, thereby preventing bleaching caused by blue light, and blocking the permeation of moisture and oxygen, thereby preventing denaturation of the quantum dot.

According to a preferred embodiment of the present invention, in order to achieve the objects of the present invention, the present invention uses a direct quantum dot device at the top of an LED, prevents bleaching caused by blue light, So that denaturation of the quantum dots does not occur.

For this purpose, a quantum dot device (Quantum Dot Device) is fabricated into a layered resin layer structure, the outer layer of the layered resin layer is a protective resin layer, and the inner resin layer is a resin layer mixed with a quantum dot .

Also, the resin layer is formed by molding, and a quantum dot device using one or more laminated resin layers is formed and separated into respective quantum dot devices.

In addition, the structure of the laminated resin layer quantum dot device formed by molding is curved so as to surround the upper surface of the LED.

Laminated resin layer made of curved surface There is an air layer between the bottom surface of the LED and the upper surface facing the LED of the quantum dot device so that the light density is reduced in the air layer to reach the quantum dot device and the blue light The intensity of the light is dispersed along the distance to weaken the intensity of the light so as to reach the quantum dot layer, thereby preventing the quantum dot from being bleed.

Also, instead of the air layer, a diffusion layer for diffusing light is formed on a part or all of an interval between the LED and the quantum dot device so that light from the LED can be diffused evenly.

It may also be a rectangular parallelepiped instead of a curved surface, or it may be wrapped around a square at right angles or enclosed like a polyhedron.

 Alternatively, the surface of the silicon may be protected by a coating with a thermosetting or ultraviolet curing resin after being made into a laminated structure with a silicone resin.

Further, in order to increase the adhesion of the silicon layer using each of the laminated silicon resin (Silicone Resin), the silicon layer is laminated, and then the adhesive force capable of thermosetting or ultraviolet curing is enhanced A polymer resin such as urethane or acrylic may be coated.

In a liquid crystal display according to the present invention, as a structure of a quantum dot device using a layered silicon resin to be applied to a direct-type backlight, it is possible to manufacture a backlight with a minimum quantum dot while increasing the stability of the quantum dot.

In addition, it is possible to apply energy saving such as local dimming by applying the present invention to a direct type in which the LED is positioned below the liquid crystal display, away from the side-LED type sheet type quantum dot device using a light guide plate.

Fig. 1 shows a cross-sectional view of the structure of a liquid crystal display using a conventional quantum dot sheet.
Fig. 2 shows the structure of a direct-type backlight which is another type of backlight of a liquid crystal display.
Fig. 3 (a) is a cross-sectional view, and Fig. 3 (b) is a plan view as seen from the upper surface.
4 is a view showing a structure in which a quantum dot layer is formed on a structure of a lower curved surface protective layer.
5 shows a structure of the resin laminated curved type quantum dot device 501 according to the present invention in which a curved quantum dot layer is formed and then an upper transparent protective layer 502 is formed on a curved quantum dot layer.
6 shows a cross-sectional view of a side surface of the upper transparent protective layer 502 of the resin laminate-type curved-type quantum dot device 501, which is shown in Fig. 6 (a) ).
FIG. 7 is a cross-sectional view of a structure in which a quantum dot device is mounted in a state where an LED is mounted on a PCB substrate or the like.
8 is a cross-sectional view of a liquid crystal display using a direct-type backlight in which curved-surface type quantum dot devices according to the present invention are respectively mounted on a plurality of LEDs used as a light source of a direct-type backlight.
FIG. 9 shows the structure in which the curved quantum dot device according to the present invention is mounted on the LED, and the light emitted from the blue LED is converted into red light and green light.
10, the curved quantum dot layer of the laminated structure according to the present invention is characterized in that the curved quantum dot layer is composed of a red curved quantum dot layer in which only red quantum dots are mixed with the resin and a green quantum dot layer in which only green curved quantum dots are mixed in the resin. Layer is formed as a double structure, and a green curved QWD layer is formed on the red curved QWD layer, so that the green light is prevented from scattering with the red QWT and the probability of scattering is reduced .
Fig. 11 shows a detailed structural diagram of a curved quantum dot layer composed of a red curved quantum dot layer and a green curved quantum dot layer.
Fig. 12 shows a structure in which light is diverged when the quantum dot device having such a laminated structure is assembled on the upper part of the LED.
Fig. 13 shows the structure of the quantum dot-organic composite particle.
Fig. 14 shows the structure of a quantum dot device in which a quantum dot-organic composite particle in which red quantum dots are mixed and a curved quantum dot layer in which green quantum dots are mixed is formed.
15 shows a structure in which a red quantum dot 1301-r and a green quantum dot 1301-g are mixed in a quantum dot-organic composite particle 1303.
FIG. 16 shows the structure of a quantum dot device in which a curved quantum dot layer is formed using quantum dot-organic composite particles in which red and green quantum dots are mixed.
17 shows the structure of a curved-type quantum dot device fabricated from a single layer curved quantum dot layer.
18 shows a cross-sectional view of a structure in which a single-layer curved-type quantum dot device is adhered to a substrate such as a PCB on which an LED is mounted.
As shown in FIG. 19 (a), the single-layer curved-type quantum dot device 1701 according to the present invention is formed by applying heat, applying ultraviolet light, evaporating a solvent, or mixing two resins such as epoxy In a curable resin including an epoxy resin to be cured, a curable resin containing a curable resin (Polymer Resin) hardened to a solid state or a curable inorganic resin (a resin containing a silicone resin) (1702) having a convex shape whose top surface is upwardly curved to a curved surface or a curved surface of a concave shape whose top surface is curved downward to a curved surface using a cured resin including a quantum dot, And the bottom of the curved-type quantum dot layer 1701, and the bottom of the curved quantum dot layer The lower spacing layer 1704 is formed so as to have a distance between the LED and the quantum dot layer.
20 shows a structure in which the inset of the single layer quantum dot device is fixed to the substrate by inserting it into the groove of the substrate.
21 shows a structure in which a plurality of single-layer curved-surface type quantum dot devices 1701 shown in Fig. 17 are formed by molding at one time.
FIG. 22 shows a structure in which a plurality of monolayer curved quantum dot elements are formed into a collective sheet in which a plurality of monolayer curved quantum dot elements are formed at one time, and then individual individual monolayer curved quantum dot elements are separated.
Fig. 23 shows a cross-sectional structure for further coating the curved quantum dot element aggregate sheet as an example of this additional coating.
Fig. 24 shows a structure in which an aggregate sheet produced by the above method is separated into individual quantum dot elements.
Fig. 25 shows a structure, a plan view, and a cross-sectional view of a quantum dot device, an LED, and a substrate having a structure in which a quantum dot device covers individual LEDs of a substrate on which a plurality of LEDs are mounted.
Fig. 26 shows that when a structure in which a quantum dot device is mixed with a resin according to the present invention is formed by molding, it can be manufactured as a structure covering all LEDs mounted on a substrate in a structure corresponding to each LED.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under the above-mentioned rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

Fig. 1 shows a cross-sectional view of the structure of a liquid crystal display using a conventional quantum dot sheet.

1 (a) is a sectional view of a liquid crystal display including a backlight. The liquid crystal display 100 includes a liquid crystal display panel (LCD Panel) 101 and two normally-prism sheets 102a and 102b constituting a backlight The light guide plate 104 and the reflection sheet 105 are mounted on the lower portion of the quantum dot sheet and the LED light source 106 is mounted on the side face of the light guide plate.

Such a structure is disadvantageous in that the amount of quantum dots is increased because the system utilizing the quantum dots is a sheet type in which the back light is applied to a backlight using a light guide plate.

Furthermore, since the film surrounding the quantum dot layer needs to use a barrier film which is difficult to transmit moisture or oxygen, manufacturing cost increases.

Fig. 1 (b) shows the detailed structure of the quantum dot sheet.

In the quantum dot sheet 103, a quantum dot layer 109 is positioned between the barrier films 107, and a barrier layer 108 such as a SiO2 thin film is coated on the barrier film.

When applying the material of the quantum dot to the sheet, it is necessary to coat the film with the size suitable for the size of the display and make it into a sheet.

In this case, the amount of the quantum dots increases, the cost increases, and the thickness increases.

For example, a 60-inch TV has a screen size of about 133 centimeters by 75 centimeters.

It is about 9975 square centimeters in area.

In the production of a sheet using a quantum dot, the thickness of the quantum dot resin in which quantum dots are mixed with a resin is usually coated on the film to a thickness of 100 micrometers.

In sheet cut form, the amount of quantum dot resin required is 9975 X 0.01 cubic centimeters, so an amount of about 99.75 cubic centimeters is required.

It is estimated that the specific gravity of the quantum dot resin is generally 2, which is an approximate value of the specific gravity of the resin, and 200 grams of resin is required.

The price increases dramatically when the point where the quantum dot material is expensive is calculated.

Therefore, a separate method is needed to solve this problem.

Fig. 2 shows the structure of a direct-type backlight which is another type of backlight of a liquid crystal display.

A direct-type backlight is a structure without a light guide plate, and a structure in which an LED is mounted on a lower portion of a liquid crystal display panel.

(a), the liquid crystal display 100 includes a liquid crystal display panel (LCD Panel) 101 and two normally arranged prism sheets 102a and 102b constituting a backlight, The LED 201 is mounted on the substrate 202 serving also as a reflector function together with an electrical connection.

 As shown in FIG. 2 (b), a transparent lens 203 for diffusing light, which is generally emitted from the LED, is mounted on the upper portion of the LED 201 mounted on the substrate 202.

The present invention relates to a structure and a fabrication method of a quantum dot device suitable for a direct-type backlight of a liquid crystal display, and to a material to be used, and it is an object of the present invention to provide a quantum dot device capable of maintaining a distance from an LED, Thereby preventing the quantum dots from being denatured by bleaching.

In addition, it is intended to have the effect that the light diffused in the quantum dot device spreads in all directions with uniformity.

As a manufacturing process and a structure for this, a lower curved surface protection layer for manufacturing a quantum dot device is formed by molding as shown in FIG.

Fig. 3 (a) is a cross-sectional view, and Fig. 3 (b) is a plan view as seen from the upper surface.

The lower curved surface protection layer 301 of the quantum dot device is composed of the curved surface structure portion 302 and the flat fixing portion 303.

A quantum dot layer is formed on the curved surface structure portion 302 of the lower curved surface protective layer and the flat fixing portion 303 is a portion to be fixed to the periphery of the LED with an adhesive or bolts on the substrate on which the LED is fixed.

A light diffusing gap 304 is formed in the lower part of the curved surface structure part 302 so as to cause light diffusion with a distance from the LED.

The separation distance simply becomes an air layer, and the light is diffused according to the distance from the LED to emit light, thereby reducing the density of the light. Alternatively, the scattering material may be filled with resin (Resin) You may,

In the present invention, the formation of the lower curved surface protective layer by molding generally means that the lower curved surface protective layer is formed of a plastic resin, a silicone resin, or a plastic film by injection molding, thermoforming, As shown in Fig.

In general, the molding of a plastic polymer resin is performed by injection molding.

Plastic materials are usually transparent acrylic materials or polycarbonate materials.

When the lower curved protective layer is produced by injection molding, the rigidity of the plastic can be maintained.

In addition, when a lower curved surface protective layer is formed by injection molding, a transparent hard coating layer is formed by a UV light curable resin or the like as a spray, and then a metal oxide such as SiO 2, TiO 2, Al 2 O 3, May be laminated in a single layer or in multiple layers.

 The metal oxide layer can function as a barrier layer to prevent reflection of light and penetration of moisture or oxygen.

In addition, thermoforming using a silicone resin (Silixone Resin) is performed by applying a liquid silicone resin to a mold having a predetermined shape and pressing it with an upper mold to heat the resin.

Silicone resin such as Dow Corning Inc. can be used. Silicone resin which is used for encapsulation of LED, solar cell encapsulant or the like can also be used.

When forming a lower curved surface protective layer using a silicone resin, a primer coating or the like can be additionally performed to increase the adhesion.

Alternatively, in the formation of the lower curved surface protective layer by molding, a film such as conventional PET can be thermoformed in a mold.

The barrier film may be used directly or may be coated by additional deposition method such as sputtering of metal oxide or ebeam evaporation.

SiO2, TiO2, or a metal oxide such as Al2O3 prevents permeation of oxygen or water.

The reason why the portion of the lower curved surface protective layer to be formed with the quantum dot layer is formed by the curved surface structure is that the quantum dot layer formed at the curved surface structure is also formed along the curved surface to increase the uniformity of light from the LED to reach the quantum dot layer .

It is also possible to maintain the distance from the LED to be constant or to calculate the distance from the LED to different distances.

For example, the upper surface from the center of the LED may have a higher density of light, and the peripheral portion may be closer to the distance, so that the shape of the curved surface may be differently formed according to the density of light from the LED.

The reason why the lower curved surface protective layer is the protective layer is that the lower curved surface protective layer functions to protect the upper quantum dot layer by blocking permeation of moisture or oxygen.

The function of protecting the quantum dots is as described in the above-mentioned invention. In the case of plastic injection molding, a polymer resin coating and a metal oxide coating on the upper part function as a barrier, or a silicone resin having hydrophobic property, moisture penetration, Or a method in which the barrier film is directly molded and used.

In addition to a simple curved surface structure, the lower curved surface protection layer has a gap with the LED, and various curved surfaces and polygonal structures including a lens shape are possible.

In addition, the lower curved protective layer may be made of a transparent material, or a scattering agent such as PMMA microbeads may be mixed to have light scattering and diffusing effects.

4 is a view showing a structure in which a quantum dot layer is formed on a structure of a lower curved surface protective layer.

A curved quantum dot layer 401 is formed on the upper surface of the curved surface structure portion 302 of the lower curved surface protective layer 301 along the curved surface of the curved surface structure portion.

(a) is a cross-sectional view thereof and (b) is a plan view seen from above.

The quantum dot layer is a structure in which quantum dots are mixed with a polymer resin or a silicone resin (Siicone Resin).

(c) is an enlarged structural view of the quantum dot layer.

The quantum dot layer 401 is prepared by mixing a liquid polymer resin or a silicone resin or a resin including the polymer resin and a silicone resin and then curing the resin material to form a quantum dot layer 403 on the resin 402. [ This is a mixed structure.

The urethane resin may be a urethane resin, an acrylic resin, or the like.

As the silicone resin, a resin such as an LED sealing material made by Dow Corning Corporation or the like can be used as a resin made on the basis of silicone, and a resin having high moisture permeation resistance or high oxygen permeation protection degree can be used.

Or a resin in which an organic polymer resin and a silicone resin are mixed or chemically bonded can be used

The quantum dot can be formed in the resin layer by mixing the red quantum dot and the green quantum dot in the resin in proportions.

The thickness of the quantum dot layer can be varied from 10 micrometers to 200 micrometers.

The method of forming the curved quantum dot layer on the lower curved protective layer is to mix the quantum dots with a liquid polymer resin or a silicone resin and then apply it on the lower curved protective layer, To form the shape of the curved quantum dot layer.

In this process, if the liquid curing method for solidifying the liquid resin is such that the temperature is raised and the cured resin is cured by heating, the curing is performed by raising the temperature of the mold, and curing is performed by methods such as ultraviolet curing, room temperature natural curing and epoxy curing.

 The formation of a curved quantum dot layer on a curved surface structure on the lower curved protective layer is performed by setting the distance from the LED to the quantum dot to be constant or changing the distance from the quantum dot with the intensity of light intensity from the LED It is possible to have a curved surface that changes.

For example, if the front angle at which the light is emitted from the LED is 0 degree, the intensity of the LED light at the 0 degree is the highest, and the light amount becomes weaker when the angle is increased.

Accordingly, the variation of the curvature according to the intensity of the light can cause the quantum dots of the curved quantum dot layer to have uniform intensity of light and scattering.

4D, the distance from the LED 201 to the curved quantum dot layer 401 is longer than the distance 405 to the side that is perpendicular to the LED. have.

This is because the intensity of the light ascending from the LED to the right angle 404 has more light intensity than the angle of the oblique angle 405.

As the quantum dot layer covering the upper surface with such an LED has a curved surface structure of a curved quantum dot layer, it is possible to efficiently design the light amount distribution of the LED, improve the durability of the quantum dot, and improve the efficiency of the light conversion characteristic.

Also, the thickness of the quantum dot layer is formed differently depending on the position of the curved surface, so that scattering according to the amount of light can be uniformly performed.

Structure of the quantum dot layer In addition to a simple curved surface structure, various curved surfaces and polygonal structures including a lens shape are possible.

5 shows a structure of the resin laminated curved type quantum dot device 501 according to the present invention in which a curved quantum dot layer is formed and then an upper transparent protective layer 502 is formed on a curved quantum dot layer.

The material of the upper protective transparent layer may be a polymer resin, a silicone resin, or a method in which the film is formed and adhered with an adhesive.

(a) is a cross-sectional view, and (b) is a plan view as seen from above.

In the method of forming the upper transparent protective layer, when a polymer resin or a silicone resin is used, a liquid resin is coated on the curved quantum dot layer 401 and pressure is applied to the mold to form a shape.

Various methods such as thermal curing or room temperature curing can be used for curing the liquid resin.

The upper transparent protective layer is advantageous to have a curved surface, but various structures such as polygonal shapes can be produced depending on the structure.

6 shows a cross-sectional view of a side surface of the upper transparent protective layer 502 of the resin laminated curved quantum dot device 501 in a rectangular shape and a cross-sectional view in which the lower curved surface protective layer 301 is polygonal (a ), And the plan view is shown in (b), which is a round shape.

Thus, the upper transparent protective layer and the lower protective layer can have various curved and polygonal structures including a lens shape.

In addition, the upper transparent protective layer and the lower curved protective layer can be made to have light scattering and diffusing effects by mixing PMMA beads of several micrometers in size, scattering agents, and the like.

FIG. 7 is a cross-sectional view of a structure in which a quantum dot device is mounted in a state where an LED is mounted on a PCB substrate or the like.

As shown in the drawing, the resin layered curved type quantum dot device 501 is mounted on the upper part of the substrate 202 while the LED 201 is electrically connected to the substrate 202 by soldering or the like Structure.

The flat fixing portion 303 of the lower curved surface protective layer 301 of the quantum dot device is bonded to the substrate 202 with the adhesive 703. [

In this structure, the blue light emitted from the LED 201 is partially scattered from the red to green quantum dots in the curved quantum dot layer, resulting in wavelength conversion from red to green, so that red light or green light is emitted And blue light is emitted if scattering does not occur.

8 is a cross-sectional view of a liquid crystal display using a direct-type backlight in which curved-surface type quantum dot devices according to the present invention are respectively mounted on a plurality of LEDs used as a light source of a direct-type backlight.

(a) and an enlarged cross-sectional view of (b), the liquid crystal display 100 includes a liquid crystal display panel (LCD Panel) 101 and two normally-prism sheets 102a, 102b And a plurality of LEDs 201 mounted on the lower portion of the prism sheet are electrically connected to a substrate 202 serving also as a reflector function and curved quantum dot devices 501 according to the present invention are formed on the respective LEDs It has been installed.

According to this structure, in the direct-type backlight, a structure in which a curved-surface type quantum dot device including quantum dots that convert light into red and green on each blue LED is mounted, thereby using the quantum dot sheet in the backlight method using the conventional light guide plate A much smaller amount of quantum dots can be used.

As an example, in a 60-inch liquid crystal display, in the case of a sheet type, a quantum dot sheet having an area of about 9975 square centimeters and an area of about 133 centimeters by 75 centimeters in size, , A coating of a thickness of 0.01 centimeter requires a volume of about 99.75 cubic centimeters of quantum dots and a volume of about 200 grams of quantities of resin containing quantum dots between 100 and 300 grams .

The amount of the resin containing the quantum dots actually required may vary depending on the design of the liquid crystal display, but a quantum dot resin corresponding to the entire area of the display is required, and therefore, a quantum dot resin which is applied to a wide area quantum dot sheet is required.

In the curved-type quantum dot device according to the present invention, only a quantum dot device corresponding to each LED required for a direct-type backlight is required.

In this case, since about 100 LEDs are used in a 60-inch liquid crystal display, the quantities of resin including quantum dots consumed by 100 LEDs are designed to require a quantum dot resin of 1 square centimeter for each LED A resin containing a quantum dot having a surface area of 100 square centimeters is required for 100 LEDs and a volume of a resin containing a quantum dot having a volume of 1 centimeter square is required when applied to a thickness of 0.01 centimeter as a volume.

This requires only about one-hundredth of the amount of resin, including quantum dots of a 99.75 cubic centimeter volume, which is roughly necessary in the case of a sheet of backlight using a light guide plate.

This is a price competitiveness that can not be compared.

Although the above calculations will vary a lot depending on the design of the manufacturer, the quantum dots according to the present invention consume much less amount than the seat type of the present invention, and thus have a competitive price.

In the above-mentioned term, the resin containing the quantum dot means that the quantum dot is a nanometer-sized particle, so it is mixed with a liquid polymer resin or a silicone resin (Silicone Resin) and coated on a film or the like. I will.

FIG. 9 shows the structure in which the curved quantum dot device according to the present invention is mounted on the LED, and the light emitted from the blue LED is converted into red light and green light.

The blue light 901 emitted from the LED 201 in the cross-sectional view is scattered in the curved quantum dot layer 401 with some red quantum dots and partly scattered with the green quantum dot, The red light 904 to the green light 902 diverge while the scattering occurs, and the blue light 903 diverges when scattering does not occur.

In the above structure, a single curved quantum dot layer is mixed with quantum dots converted into red light and quantum dots converted into green so that a single layer converts the light into red or green light.

In the present invention, the spacing distance allowing the light to diffuse from the LED 201 to the curved quantum dot layer 401 causes the blue light to diffuse as it passes through the spacing distance, Is weakened.

Since the intensity of light is proportional to one-half of the distance, the density of light is about 100 times greater when the distance from the LED to the curved quantum dot layer is 1 millimeter or 1 centimeter.

Therefore, as the intensity of light reaching the quantum dots decreases, the lifetime of the quantum dots increases.

Accordingly, the durability of the quantum dot device is increased according to the spacing distance according to the present invention.

The separation distance portion can be formed simply as an air layer.

That is, the lower curved surface protection layer of the lower portion of the quantum dot device is shaped to have a curved surface, and an air layer is formed thereunder.

Alternatively, a polymer or a silicone resin may be filled in the distance portion, or a diffusing micro bead such as a PMMA bead having a size of several micrometers may be mixed with the resin.

In the curved quantum dot layer in the present invention, quantum dots having a size for converting blue light into red light and quantum dots having a size for converting green light are mixed together.

For convenience, in the present invention, a quantum dot having a size that converts blue light into red light is referred to as a red quantum dot, and a quantum dot having a size that converts blue light to green light is referred to as a green quantum dot.

In this structure, the color combination of the blue light is changed according to the ratio of the red quantum dot and the green quantum dot, and the color distribution of the light is adjusted by using this.

Blue light is converted to red light by scattering with red quantum dots, and green quantum dots and scattering are converted into green light because high energy light is converted into low energy light.

Conversely, red light does not convert to green even when scattered with green quantum dots.

When blue light is scattered with the green quantum dot, it is converted to green. When green quantum dot and scattering occurs, green light is converted into red light.

Therefore, when the red quantum dot and the green quantum dot are mixed in the quantum dot layer, the probability that the green light generated in the green quantum dot is scattered again with the red quantum dot is converted into red is generated.

Therefore, by mixing the quantum dots, the ratio of the red quantum dot and scattering of the blue light to the green quantum dot and the scattering ratio of the green quantum dot and the scattering does not occur by the simple ratio of the red quantum dot and the green quantum dot, And the ratio of green to red is determined by the fact that green light generated by scattering of green quantum dots and scattered red quantum dots are redirected to red, resulting in difficulty in accurate calculation and errors.

Because red light is lower in energy than green, red light does not convert to green even if scattering occurs with green quantum dots.

Therefore, in the structure of the present invention, it is possible to separate the red quantum dot layer and the green quantum dot layer from each other so that the light converted to green does not scatter with the red quantum dot.

10, the curved quantum dot layer of the laminated structure according to the present invention is characterized in that the curved quantum dot layer is composed of a red curved quantum dot layer in which only red quantum dots are mixed with the resin and a green quantum dot layer in which only green curved quantum dots are mixed in the resin. Layer is formed as a double structure, and a green curved QWD layer is formed on the red curved QWD layer, so that the green light is prevented from scattering with the red QWT and the probability of scattering is reduced .

10, a resin laminated curved quantum dot device 501 according to the present invention has a red curved quantum dot layer 1002 formed on a lower curved surface protective layer 301, A green curved quantum dot layer 1003 is formed, and an upper transparent protective layer 502 is formed on a green curved quantum dot layer.

Since the green quantum dot layer is located at the upper part of the red quantum dot layer, the light converted into green light diverges upward, thereby reducing the probability of scattering and scattering of the red quantum dot layer.

Fig. 11 shows a detailed structural diagram of a curved quantum dot layer composed of a red curved quantum dot layer and a green curved quantum dot layer.

As shown in FIG. 5A, the resin laminated curved quantum dot device 501 has a red curved quantum dot layer 1002 formed on a lower curved surface protective layer 301, and a green curved quantum dot layer 1002 is formed on a red curved quantum dot layer. The curved quantum dot layer 1003 is formed and the upper transparent protective layer 502 is formed on the green quantum dot layer and the blue curved quantum dot layer 1002 in the detailed structure diagram of FIG. A red quantum dot 1101 of a size to convert red light into a green quantum dot 1103 is mixed with a resin 1102 and a green quantum dot 1103 of a size capable of converting blue light into green light is formed in the green curved quantum dot layer 1003 Is mixed with the resin (1104).

Fig. 12 shows a structure in which light is diverged when the quantum dot device having such a laminated structure is assembled on the upper part of the LED.

The blue light 1201 emitted from the LED 201 is scattered in the red curved quantum dot layer 1002 of the curved quantum dot layer with the red quantum dot so that the red light 1202 Green light 1203 diverges as scattering occurs in the green curved quantum dot layer 1003 and blue light 1204 only undergoes refraction conversion as it is if scattering does not occur It will be divergent.

The quantum dot to be mixed in the quantum dot layer in the structure of the present invention is a quantum dot of several nanometers in size directly mixed with resin.

However, it is not easy to uniformly mix quantum dots of several nanometers in size with a liquid resin.

Therefore, a quantum dot-organic composite particle made of a plurality of quantum dots mixed with an organic material is manufactured and mixed with a resin to form a curved quantum dot layer .

The size of the quantum dot-organic composite particle can be made from several hundred nanometers to tens of micrometers.

For example, when the number of quantum dots contained in a particle is approximated, the size of the quantum dots is 10 nanometers and the distance between the quantum dots is 10 nanometers , When one side is calculated as a square of 1 micrometer, 125,000 quantum dots are included in the quantum dot-organic composite particle.

Therefore, in the case of a quantum dot-organic composite particle of several micrometers in size, it usually includes hundreds of thousands to several million quantum dots.

The organic material of the quantum dot-organic composite particles can be an organic polymer, and various types of organic polymers such as acryl-based, urethane-based and ethylene-based organic polymers can be used.

Or inorganic polymers such as silicon (Silicone) may be mixed or chemically bonded to each other, or a variety of polymers such as a polymer in which an organic polymer and an inorganic polymer are chemically bonded may be used.

Therefore, since silicon is an inorganic substance, when it is manufactured using a resin such as silicon, it becomes a quantum dot-inorganic composite particle.

Since the quantum dot-organic composite particle or the quantum dot-inorganic composite particle includes hundreds of thousands to millions of quantum dots, the quantum dot-organic composite particle or the quantum dot-inorganic composite particle is collectively referred to as a composite of a plurality of quantum dots It may be collectively referred to as a quantum dot aggregate composite particle which is a particle in the form of aggregated quantum dots formed in the form of particles.

Fig. 13 shows the structure of the quantum dot-organic composite particle.

(a) shows a green quantum dot 1301-g to be converted to green as a conventional quantum dot 1301, and the particles are shown in the form of quantum dot-organic composite particles 1303.

The quantum dot-organic composite particle 1303 includes a quantum dot 1301 and is mixed with the organic polymer 1302 supporting the quantum dot.

(b) shows a red quantum dot-organic composite particle 1303 in which a red quantum dot 1301-r, a red quantum dot and an organic polymer are mixed.

(c) is a schematic diagram of a structure in which quantum dots and an organic polymer are mixed. The structure in which the quantum dots 1301 are surrounded by the organic polymer 1302 and the organic polymer supports the quantum dots is shown. And becomes a quantum dot-organic composite particle with a size of several micrometers.

A method of mixing particles of quantum dots with organic polymers is generally performed by mixing organic polymers and quantum dots in a solvent while evaporating the solvent and granulating the organic polymer and quantum dots together.

In this case, the particle size depends on the dispersing agent, the surface modifier (surfactant), the evaporation rate of the solvent, and the like.

Fig. 14 shows the structure of a quantum dot device in which a quantum dot-organic composite particle in which red quantum dots are mixed and a curved quantum dot layer in which green quantum dots are mixed is formed.

The quantum dot device 501 includes a curved quantum dot layer 401 formed by mixing a red quantum dot organic compound particle and a green quantum dot organic compound particle on a lower curved surface protective layer 301 with a resin, And the upper transparent protective layer 502 is formed on the green curved quantum dot layer.

As shown in the enlarged view in (b) of the drawing, a quantum dot layer 1303-g having a structure in which red quantum dot-organic composite particles 1303-r and green quantum dot-organic composite particles 1303- And each is a quantum dot-organic composite particle in which a red quantum dot 1301-r and a green quantum dot 1303-g are mixed.

As in this structure, the quantum dot-organic composite particles are mixed with a liquid silicone resin or a polymer resin and then cured again to form a curved quantum dot layer, The acidity can be increased and the process can be stabilized.

Typically, dispersing nanometer sized particles is much more difficult than dispersing micrometer sized particles, thus increasing the degree of difficulty of the process.

Therefore, by using the quantum dot-organic composite particles having a size of several micrometers, it is possible to easily mix the silicone resin, the polymer resin, and the quantum dot-organic composite particles and to improve the stability of the quality in the fabrication of the curved surface layered quantum dot device according to the present invention .

In the above structure, a quantum dot layer using red quantum dot-organic composite particles and a quantum dot layer using green quantum dot-organic composite particles are separated. However, the red quantum dot-organic composite particles and the green quantum dot- May be mixed at a constant ratio and dispersed in the resin to form a single quantum dot layer.

In this structure, a quantum dot device can be manufactured as a single quantum dot layer.

Further, in the above structure, a quantum dot-organic composite particle using a red quantum dot and a quantum dot-organic composite particle using a green quantum dot are separately fabricated in the production of a quantum dot-organic composite particle in a resin laminate type quantum dot device , And red quantum dots and green quantum dots can be mixed together in a single quantum dot-organic composite particle in proportions.

In this case, it is also possible to produce a curved quantum dot layer using quantum dot-organic composite particles in a single structure.

15 shows a structure in which a red quantum dot 1301-r and a green quantum dot 1301-g are mixed in a quantum dot-organic composite particle 1303.

One kind of particles can be used to form a curved quantum dot layer by mixing red quantum dot and green quantum dot with one quantum dot-organic composite particle according to the requirement of optical spectrum.

FIG. 16 shows the structure of a quantum dot device in which a curved quantum dot layer is formed using quantum dot-organic composite particles in which red and green quantum dots are mixed.

As shown in FIG. 3A, the quantum dot device 501 includes a curved quantum dot layer 401 formed by mixing quantum dot-organic composite particles with a resin on a lower curved surface protective layer 301, The upper transparent protective layer 502 is formed.

As shown in the enlarged view in (b) of the drawing, a quantum dot layer 1303-g having a structure in which red quantum dot-organic composite particles 1303-r and green quantum dot-organic composite particles 1303- And each is a quantum dot-organic composite particle in which a red quantum dot 1301-r and a green quantum dot 1301-g are mixed with a polymer resin or a silicone resin.

As in this structure, the quantum dot-organic composite particles are mixed with a liquid silicone resin or a polymer resin to form a curved quantum dot layer. The acidity can be increased and the process can be stabilized.

The polymer resin includes an acrylic resin, an urethane resin, and the like, and includes an epoxy resin in which two resins are mixed and used.

As shown in the above-mentioned invention, a curved type quantum dot device is fabricated as a structure in which a separate transparent protective layer is formed above and below the curved quantum dot layer. As another application thereof, there is known a single curved quantum dot layer It is also possible to fabricate a single layer curved quantum dot device having a single layer structure.

This includes the point where the quantum dot layer is curved convexly toward the top and the lower part is the air layer or the quantum dot lower spacing layer which is filled with the diffusing agent and has a distance from the LED.

17 shows the structure of a curved-type quantum dot device fabricated from a single layer curved quantum dot layer.

As shown in FIG. 6A, the single-layer curved-type quantum dot device 1701 according to the present invention is cured when heat is applied, ultraviolet light is applied, solvent is evaporated, or two kinds of resins are mixed, A curable resin containing a curing-type resin (Polymer Resin) hardened to a solid state or a curable-type inorganic resin (Inorganic Resin) containing a silicone resin in a curable resin containing an epoxy resin or the like includes a quantum dot including a quantum dot A curved surface type quantum dot layer 1702 having a convex shape whose top surface is upwardly curved to a curved surface or a concave curved surface whose top surface is curved downward to a curved surface by using a curable resin and is made of a resin including the same quantum dots as a frame, The lower portion of the curved quantum dot layer has a lower spacing so as to have a distance between the LED and the quantum dot layer, The portion 1704 is the formation.

The lower spacing distance portion is empty and is separated to the air layer.

(b) is a plan view, which is composed of a curved quantum dot layer 1702 and a flat fixed portion 1703 of a rim.

(c), the quantum dot-organic composite particle 1303-r and the green quantum dot-organic composite particle 1303-g are shown as an enlarged view of the structure of the quantum dot layer, And a quantum dot layer having a structure mixed with the quantum dot layer.

The resin (402) is generally indicated by a line because it means a polymer resin.

As shown in (d), each of the green and red quantum dot-organic complexes includes a quantum dot-organic composite particle 1301-r in which a red quantum dot 1301-r and a green quantum dot 1301-g are mixed with an organic polymer .

18 shows a cross-sectional view of a structure in which a single-layer curved-type quantum dot device is adhered to a substrate such as a PCB on which an LED is mounted.

As shown in the figure, the single layer curved type quantum dot device 1701 is mounted on the upper part of the substrate 202 while the LED 210 is electrically connected to the substrate 202 by soldering or the like Structure.

The single-layer curved-type quantum dot element 1701 adheres the flat fixing portion 1703 to the substrate 202 with an adhesive 703.

Further, between the LED 201 and the curved quantum dot layer 1702, there is a lower space distance portion 1704 made of air.

The lower spacing distance portion is spaced from the LED to the curved quantum dot layer so that the blue light from the LED is diffused in the lower spacing layer to reach the curved quantum dot layer.

The lower spacing distance portion may be filled with a resin or the like mixed with dispersed particles having a scattering function in addition to a method of forming an air layer.

In this structure, the dispersion of the light occurs more easily.

As described above, the single-layer curved quantum dot device can be manufactured by mixing the quantum dot-organic composite particles made of particles of several micrometer size by mixing the quantum dot device with an organic material in another liquid resin or a solid resin It is a structure that is formed in a curved shape.

In this structure, the curved surface includes all the curved surfaces such as a hemisphere, a cylindrical shape, and an elliptical shape, which are spaced from the light source, so that the light intensity can be appropriately reduced according to the distance.

It is also referred to as a curved surface, but it includes a structure having a rectangular structure or a polygonal structure and having a gap from the LED.

In addition, the kind of the organic material to be manufactured as the quantum dot-organic material composite particle generally includes a polymer such as polyethylene, acryl, urethane, etc., and more broadly includes a composite of an organic material and an inorganic material, And includes particles composed of a plurality of quantum dots and inorganic complexes.

Although the size of the quantum dots is several nanometers, the size of the quantum dot complexes including tens to millions of quantum dots can be varied from several hundred nanometers to tens of micrometers.

The advantage of the structure fabricated with a single-layer QD device is that it can be fabricated at one time to the fixed region.

As shown in FIG. 19 (a), the single-layer curved-type quantum dot device 1701 according to the present invention is formed by applying heat, applying ultraviolet light, evaporating a solvent, or mixing two resins such as epoxy In a curable resin including an epoxy resin to be cured, a curable resin containing a curable resin (Polymer Resin) hardened to a solid state or a curable inorganic resin (a resin containing a silicone resin) (1702) having a convex shape whose top surface is upwardly curved to a curved surface or a curved surface of a concave shape whose top surface is curved downward to a curved surface using a cured resin including a quantum dot, And the bottom of the curved-type quantum dot layer 1701, and the bottom of the curved quantum dot layer The lower spacing layer 1704 is formed so as to have a distance between the LED and the quantum dot layer.

The function of the insertion fixing part is to fix a single-layered quantum dot device in a groove or the like of the substrate.

The lower spacing layer is empty and spaced into the air layer.

(b) is a plan view, which is composed of a curved quantum dot layer 1702, a flat fixed portion 1703 of a rim, and an insertion fixing portion 1901.

20 shows a structure in which the inset of the single layer quantum dot device is fixed to the substrate by inserting it into the groove of the substrate.

The insertion fixing portion 1901 of the single-layer curved-type quantum dot device 1701 is fitted and fixed in the groove of the substrate 202 having the groove as shown in the sectional view.

In the above drawings, a single layer curved type quantum dot device can be fabricated one by one for each cell, but generally, a plurality of methods are used to form the unit cells at one time and to separate them into unit cells through a subsequent process.

21 shows a structure in which a plurality of single-layer curved-surface type quantum dot devices 1701 shown in Fig. 17 are formed by molding at one time.

Is a curved quantum dot device sheet 2101 manufactured by connecting a plurality of monolayer curved quantum dot devices 1701 as shown in plan views (a) and (b).

The term "aggregate sheet" means that a plurality of structures of a curved-type quantum-dot device are formed on a mold for molding, and the curved quantum dot devices are also connected to each other between the curved quantum dot devices. Means a structure formed as a single sheet.

If each of them is separated, it becomes an individual curved type quantum dot device.

FIG. 22 shows a structure in which a plurality of monolayer curved quantum dot elements are formed into a collective sheet in which a plurality of monolayer curved quantum dot elements are formed at one time, and then individual individual monolayer curved quantum dot elements are separated.

layer curved-type quantum dot device 1701 in the quantum dot device aggregate sheet as shown in the plan view of FIG. 17A and the sectional view of FIG. 17B by cutting or the like.

Accordingly, by forming a plurality of quantum dot devices at once in this manner and then separating them, the efficiency of manufacturing the quantum dot devices is enhanced.

An advantage of fabricating the shape of an aggregate sheet in which a plurality of curved quantum dot devices are formed at once is that the quantum dot device can be protected by an additional process or an additional structure can be manufactured.

Since the quantum dot device is vulnerable to oxygen permeation and moisture, an additional protective layer may be needed to prevent this.

Therefore, additional barrier properties that protect the quantum dot device up and down may be required for this purpose.

Fig. 23 shows a cross-sectional structure for further coating the curved quantum dot element aggregate sheet as an example of this additional coating.

(a) shows the cross-sectional structure of the curvilinear quantum dot element aggregation sheet 2101 described in Fig.

In the aggregate sheet, liquid polymer resin or silicone resin in which quantum dots or quantum dot-organic composite particles are dispersed is inserted into a mold, and pressure is applied to the aggregate sheet.

(b) and (c) show a structure in which primary transparent coatings 2301a and 2301b are formed on the lower surface and the upper surface of the assembly sheet 2101, respectively.

The reason for the transparent coating is to smooth the surface of the aggregate sheet to be formed by molding, and then to make the oxide coating uniform.

It is also possible to finish the manufacture of the product with a primary transparent coating on the sheet.

In this case, the primary transparent coating may have a hydrophilic function to prevent moisture penetration.

The first transparent coating is formed by a spray coating method or the like, and the coating agent is an acrylic resin, a urethane resin, a silicone resin, or a compound resin containing a mixture of a plurality of organic materials or inorganic materials.

The thickness of the primary transparent coating can range from a few hundred nanometers to several tens of micrometers.

An inorganic material thin layer (2302a, 2302b) can be coated on the primary coating as a function to prevent further infiltration of oxygen or moisture.

Typically, SiO2 or the like is coated.

It is also coated when making common barrier films.

(e) is a structure in which transparent coatings 2303a and 2303b are formed on the outer transparent coatings 2303a and 2303b using an ultraviolet curing resin or the like to protect the inorganic thin film after coating the inorganic thin film.

In the above drawings, the coatings are sequentially laminated, but in some cases, one layer of additional protective coating may be completed, and additional coatings of two to three or more layers may be performed depending on the required performance.

Fig. 24 shows a structure in which an aggregate sheet produced by the above method is separated into individual quantum dot elements.

The curved surface type quantum dot devices 2401 are separated one by one as shown in the plan view and the sectional view of FIGs. (A) and (b), respectively.

As shown in the enlarged cross-sectional view of FIG. 5C, the coated curved quantum dot device has a structure in which first transparent coating layers 2301a and 2301b and an inorganic thin film coating layer 2302a and 2302b and outer transparent coatings 2303a and 2303b.

In the above structure, the coating layer is composed of three layers, but it may be composed of one layer or a plurality of layers depending on the required performance.

Therefore, as a structure according to the present invention, production of an aggregate-type sheet for forming a plurality of curved quantum dot devices at one time can be performed, and production efficiency can be increased, and additional coating can be performed at once.

Fig. 25 shows a structure, a plan view, and a cross-sectional view of a quantum dot device, an LED, and a substrate having a structure in which a quantum dot device covers individual LEDs of a substrate on which a plurality of LEDs are mounted.

As an example, a structure in which a curved surface quantum dot device 2401 with a coating is mounted is shown, but a quantum dot device according to the structure of the present invention is applicable.

A quantum dot device 2401 is fixed on a plurality of LEDs 201 mounted on a substrate 202 as shown in a cross-sectional view (a) and a plan view (b), respectively.

With this structure, when the light emitted from the individual blue LED passes through the quantum dot device, it is converted into the appropriate spectrum of red and green, and blue, green, and red light are emitted with the blue light that has not been converted.

In the structure of the present invention, the curved surface structure is basically a hemispherical shape surrounding the LED, and the hemispherical shape is not symmetrical but various curved shapes and also includes a polygonal structure.

Fig. 26 shows that when a structure in which a quantum dot device is mixed with a resin according to the present invention is formed by molding, it can be manufactured as a structure covering all LEDs mounted on a substrate in a structure corresponding to each LED.

It is possible to manufacture a semicylindrical structure by expanding a semi-spherical structure.

A plurality of LEDs 201 mounted on a substrate 202 as shown in a front view (a), a plan view (b), a longitudinal sectional view (c) And a distance 2602 is provided between the LED and the quantum dot device.

This structure requires a lot of quantum dots compared to individual quantum dot devices, but this structure can facilitate assembly.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof,

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the following claims.

Liquid crystal display (100) Liquid crystal display panel (101)
The prism sheets 102a, 102b, the quantum dot sheet 103,
Light guide plate 104 Reflective sheet 105 LED light source 106
Barrier film 107 Quantum dot layer 109 Barrier layer 108
LED 201 substrate 202 transparent lens 203 lower curved surface protection layer 301
The curved surface structure portion 302 and the flat fixing portion 303,
Light Diffusion Gap (304)
A quantum dot layer 401, a resin 402, a quantum dot 403,
The distance 405 to the side of the distance 404 at the right-
The upper transparent protective layer 502 on the resin laminated curved-type quantum dot device 501,
Adhesive (703) Blue light (901) Red light (904) Green light (902) Blue light (903)
A red curved quantum dot layer 1002, a green curved quantum dot layer 1003,
Red quantum dot 1101 resin 1102 green curved quantum dot layer 1003 green quantum dot 1103,
Resin (1104) Blue light (1201) Red light (1202) Green light (1203) Blue light (1204)
The quantum dot 1301 green quantum dot (1301-g) quantum dot-organic composite particle 1303
The organic polymer (1302) red quantum dot (1301-r)
The red quantum dot-organic composite particles (1303)
The single-layer curved-type quantum dot device 1701 includes a curved quantum dot layer 1702,
The lower flat portion 1704 of the flat fixing portion 1703,
The insertion fixing portion 1901 includes a curved quantum dot element aggregation sheet 2101,
The primary transparent coatings 2301a and 2301b
Inorganic material thin layers 2302a and 2302b,
Outer transparent coatings 2303a and 2303b Curved quantum dot element 2401,
The lengthwise curved-type quantum dot device 2601 separation distance portion 2602,

Claims (12)

As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
Wherein the resin is a curved surface formed by molding a curved surface, and the quantum dot device has a curved surface structure in which a quantum dot and a resin are mixed. The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
In a resin (Resin) in which quantum dots are mixed and dispersed,
The kind of the resin includes an inorganic polymer resin including an organic polymer resin including silicon and a urea or a silicone, and a compound of an organic polymer resin and an inorganic polymer resin. Quantum dot device with curved surface structure. The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
A method of fixing a quantum dot device, which is a curved structure, by adhering to the periphery of an LED of a substrate on which an LED is mounted,
The quantum dot device having a curved surface structure is surrounded by the periphery of the LED,
Wherein the distance between the light emitting portion of the LED and the quantum dot device is a distance from the light emitting portion of the LED to the quantum dot device. The method of claim 3,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
A method of fixing a quantum dot device, which is a curved structure, by adhering to the periphery of an LED of a substrate on which an LED is mounted,
The quantum dot device having a curved surface structure is surrounded by the periphery of the LED,
Since there is a distance from the light emitting portion of the LED to the quantum dot device,
A quantum dot device having a curved surface structure in which a quantum dot and a resin are mixed, characterized in that an air layer is formed at a portion apart from the light emitting portion of the LED to the quantum dot device. The method of claim 3,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
A method of fixing a quantum dot device, which is a curved structure, by adhering to the periphery of an LED of a substrate on which an LED is mounted,
The quantum dot device having a curved surface structure is surrounded by the periphery of the LED,
Since there is a distance from the light emitting portion of the LED to the quantum dot device,
A quantum dot device having a curved surface structure in which a resin layer or a transparent lens including a diffusing agent is mounted on all or a part of a part of the LED that is spaced from the light emitting part to the quantum dot device. The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
A plurality of quantum dots are formed in the form of quantum dot aggregates (particles) obtained by curing an organic material or an inorganic material,
A quantum dot device having a curved surface structure in which quantum dots and a resin are mixed, characterized in that quantum dot aggregation particles are dispersed in a resin. The method of claim 6,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
In a structure in the form of quantum dot aggregated particles (particles) in which a plurality of quantum dots are cured by mixing with an organic material or an inorganic material,
The quantum dot cluster particle is a structure in which particles containing only green quantum dots and particles containing only red quantum dots are separately produced,
Wherein the quantum dot cluster particle comprises a structure in which each quantum dot cluster is immediately prepared by mixing a green quantum dot and a red quantum dot, wherein the quantum dot cluster particle has a mixed structure of a quantum dot and a resin. The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
A quantum dot device having a curved surface structure in which a quantum dot and a resin are mixed, characterized in that a protective layer is formed on the upper surface and the lower surface of the quantum dot device having a curved surface structure. The method of claim 8,
The protective layer formed on the upper and lower surfaces of the quantum dot device having a curved surface structure is formed by a single layer or a laminate of an organic coating layer or an inorganic thin film layer in which a transparent organic coating layer or a diffusing agent is mixed. Structure of quantum dot device. The method of claim 8,
A structure for forming a protective layer on the lower surface of a quantum dot device having a curved surface structure,
A quantum dot device having a curved surface structure formed by mixing a quantum dot and a resin, characterized in that a quantum dot device having a curved surface structure is formed by molding on transparent or diffusely curved plastic. The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
A quantum dot device having a curved surface structure in which a quantum dot and a resin are mixed, characterized in that the quantum dot device has a plurality of curved surface structure connected to the quantum dot device. The method according to claim 1,
As a device using a quantum dot having a nanometer size that converts blue light from green to red,
Dispersing the quantum dots in Resin,
As a structure of a curved surface formed by molding a resin into a curved surface,
Wherein the shape of the curved surface includes a semi-spherical shape, a semicylinder shape, or a polygonal shape, wherein the quantum dot and the resin are mixed.
KR1020150109258A 2015-08-01 2015-08-01 Qusntum Dot Light Conversion Device KR20170015831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150109258A KR20170015831A (en) 2015-08-01 2015-08-01 Qusntum Dot Light Conversion Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150109258A KR20170015831A (en) 2015-08-01 2015-08-01 Qusntum Dot Light Conversion Device

Publications (1)

Publication Number Publication Date
KR20170015831A true KR20170015831A (en) 2017-02-09

Family

ID=58154650

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150109258A KR20170015831A (en) 2015-08-01 2015-08-01 Qusntum Dot Light Conversion Device

Country Status (1)

Country Link
KR (1) KR20170015831A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101982012B1 (en) * 2017-11-17 2019-05-24 주식회사 지엘비젼 Light modulating plate
KR20190059208A (en) * 2017-11-22 2019-05-30 동우 화인켐 주식회사 A light converting resin composition, a light converting unit and a display device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101982012B1 (en) * 2017-11-17 2019-05-24 주식회사 지엘비젼 Light modulating plate
KR20190059208A (en) * 2017-11-22 2019-05-30 동우 화인켐 주식회사 A light converting resin composition, a light converting unit and a display device using the same
KR20190059207A (en) * 2017-11-22 2019-05-30 동우 화인켐 주식회사 A light converting resin composition, a light converting unit and a display device using the same

Similar Documents

Publication Publication Date Title
TWI447450B (en) Light guide panel, backlight module, and manufacturing method thereof
US7670031B2 (en) Lighting device and display apparatus
CN205942193U (en) Backlight unit
US8975814B2 (en) Scattering film for organic EL, and organic EL light-emitting device equipped with same
WO2014115992A1 (en) Quantum dot composite film and backlight unit using same
CN106773320B (en) Backlight module, optical enhancement unit and manufacturing method of optical enhancement unit
JP2016194558A (en) Quantum dot sheet, backlight device, and display
JP2019079043A (en) Liquid crystal panel and liquid crystal display device including the same
JP5463966B2 (en) Light guide plate, surface light source device, and liquid crystal display device
JPWO2018155304A1 (en) Brightness equalizing member, backlight unit, and liquid crystal display device
JP2023512767A (en) Backlight with pattern reflector
CN113437052B (en) Color conversion layer for improving backlight or display uniformity of micro-LED and preparation method thereof
KR20170020182A (en) Qusntum Dot Light Conversion Device
CN115053152A (en) Diffusion member, surface light source device, and display device
JP2017022059A (en) Quantum dot laminate, back light and liquid crystal display device
TWM613917U (en) Backlight apparatus
US12072513B2 (en) Lighting device and optical member
KR20190006137A (en) Optical member, display including the same and method for fabricating the optical member
US11048121B2 (en) Lighting device and display device
KR20170059597A (en) Qusntum Dot Capsule including Multi Light Spectrum Quantum Dots
JP2024105382A (en) BACKLIGHT MODULE AND DISPLAY DEVICE
KR20170015831A (en) Qusntum Dot Light Conversion Device
TW202006407A (en) Optical member, optical sheet and method for fabricating optical sheet
KR20170023376A (en) Qusntum Dot Light Conversion Sheet
KR20170023375A (en) Qusntum Dot Light Conversion Sheet

Legal Events

Date Code Title Description
N231 Notification of change of applicant