KR20170019109A

KR20170019109A - Fabrication methods of stretchable thermoelectric modules and thermoelectric modules produced using the same methods

Info

Publication number: KR20170019109A
Application number: KR1020150113055A
Authority: KR
Inventors: 오태성; 김재환; 박대웅; 김우준
Original assignee: 홍익대학교 산학협력단
Priority date: 2015-08-11
Filing date: 2015-08-11
Publication date: 2017-02-21

Abstract

Since the present invention does not have an upper substrate and a lower substrate and has a thermoelectric module filled with a polymer material, the temperature difference between the thermoelectric elements can be largely maintained because there is no ceramic substrate having a high thermal resistance unlike the existing technology, The present invention provides a method of manufacturing a thermoelectric module in which flexibility and stretchability can be imparted to a thermoelectric module unlike the existing technology when a polymeric material for filling is used as a stretchable polymer material, will be.

Description

[0001] The present invention relates to a method of manufacturing a thermoelectric module and a thermoelectric module produced thereby,

The present invention relates to a method of manufacturing a thermoelectric module and a thermoelectric module manufactured by the method. In particular, since the thermoelectric module is not provided with an upper substrate and a lower substrate and includes a stretchable thermoelectric module filled with a polymer material, Since there is no ceramic substrate, the temperature difference between the thermoelectric elements can be largely maintained, and the thermoelectric performance can be remarkably improved. Unlike the existing technology, when the polymer material for filling is used as the stretchable polymer material, flexibility and stretchability are imparted to the thermoelectric module And a thermoelectric module manufactured by the method.

Thermoelectric materials have been widely applied to electronic cooling and thermoelectric power generation because they can directly convert heat and electricity by the Seebeck effect and Peltier effect. The p-type thermoelectric elements and the n-type thermoelectric elements are electrically connected in series and thermally connected in parallel. When a thermoelectric module is used for electronic cooling, a direct current is applied to the module, so that heat is transferred from the cold junction to the hot junction (hot junction) between the p-type thermoelectric device and the n- junction and the cold end is cooled. On the other hand, in the case of thermoelectric power generation, due to the temperature difference between the high-temperature end and the low-temperature end of the module, heat is transferred from the high temperature end to the low temperature end, and holes and electrons move from the high temperature end to the low temperature end in the p- The electromotive force is generated by the Seebeck effect.

The electronic cooling module has a high thermal response sensitivity, can be locally selectively cooled, and has a simple structure because it has no operating part. It is practical for local cooling of electronic components such as optical communication LD module, high power transistor, infrared sensor and CCD And is applied to industrial and civil service thermostats, scientific and medical thermostats. Thermoelectric power generation is possible only when the temperature difference is given, so that the selection range of the heat source is wide, the structure is simple and there is no noise, the thermoelectric generator using the industrial waste heat, the special small power source including the military power source, And a miniature thermoelectric generator for energy harvesting using a generator and a human body heat.

1 is a longitudinal sectional view schematically showing a conventional thermoelectric module 10 according to the related art. 1, the upper and lower substrates 11 and 12 are provided on the top and bottom surfaces of the thermoelectric module 10, respectively. The upper substrate 11 and the lower substrate 12 are fixed to each other. A plurality of p-type thermoelectric elements 13 and an n-type thermoelectric element 14 are provided. The heat source heat is transmitted to the p-type thermoelectric element 13 and the n-type thermoelectric element 14 through the upper substrate 11 and the p-type thermoelectric element 13 and the n- Heat is released from the thermoelectric element 14 as a heat sink.

The p-type thermoelectric elements 13 and the n-type thermoelectric elements 14 provided between the upper substrate 11 and the lower substrate 12 are generally hexahedron-shaped elements having a constant size, and the p-type thermoelectric elements 13 Type thermoelectric elements 14 are electrically connected in series and thermally connected in parallel to the electrodes 15 provided on the upper substrate 11 and the lower substrate 12. The upper substrate 11 and the lower substrate 12 are mainly made of a ceramic material such as hard and hard alumina, and the electrode 15 is generally made of copper. In order to prevent the thermoelectric elements 13 and 14 from being contaminated by the solder used as the device bonding layer 16 when the p type thermoelectric element 13 and the n type thermoelectric element 14 are bonded to the electrode 15, Type thermoelectric element 13 and the barrier layer 17 may be provided on the upper and lower surfaces of the n-type thermoelectric element 14 and the n-

However, in the conventional thermoelectric module 10, the temperature difference acting on the p-type thermoelectric element 13 and the n-type thermoelectric element 14 due to the high thermal resistance of the ceramic substrates 11 and 12 The performance of the thermoelectric module 10 is remarkably deteriorated because it is significantly lower than the temperature difference externally applied.

Further, in the thermoelectric module 10 according to the prior art, the alumina substrate used as the upper substrate 11 and the lower substrate 12 is hard and not rigid at all, is not flexible, and is broken due to bending external force or expansion / contraction external force. And the thermoelectric module having elasticity is not used at all.

The present invention has been conceived to solve the problems of the conventional thermoelectric module as described above. Unlike the conventional technology, the thermoelectric module includes the upper substrate and the lower substrate, and the module is filled with the polymer material. Since there is no such a high ceramic substrate, a temperature difference between the thermoelectric elements can be largely maintained, and the thermoelectric performance can be remarkably improved. Unlike the existing technology, when a polymer material for filling is used as a stretchable polymer material, flexibility and stretchability And to provide a thermoelectric module manufactured by the method.

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) forming a substrate peeling layer on a temporary upper substrate and a temporary lower substrate; (b) forming electrodes on the substrate peeling layer; (c) arranging and bonding the p-type thermoelectric elements and the n-type thermoelectric elements to the electrodes; (d) filling the inside of the module, in which the p-type thermoelectric elements and the n-type thermoelectric elements are bonded to electrodes, with a polymer; (e) peeling off the temporary upper substrate and the temporary lower substrate from the module filled with the polymer; And (f) removing the substrate peeling layer from the module from which the temporary upper substrate and the temporary lower substrate are removed. The present invention also provides a method of manufacturing a thermoelectric module.

Preferably, the temporary top board and temporarily lower substrate is a silicon (Si), glass (SiO _2), alumina (Al ₂ O _3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ , MgO, Ni, Cu, Sn, Ag, Al, Au, Pt, Fe, , At least one of chromium (Cr), titanium (Ti), tantalum (Ta), and tungsten (W).

Preferably, the substrate delamination layer is formed of a material selected from the group consisting of Ni, Cu, Sn, Ag, Al, Au, Pt, (Cr), titanium (Ti), tantalum (Ta), and tungsten (W).

Preferably, the substrate delamination layer is formed by any one of vacuum deposition, electron beam deposition, electroplating, electroless plating, sputtering, screen printing, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) And two or more methods are provided in combination.

Preferably, the electrode is made of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum ), Titanium (Ti), tantalum (Ta), tungsten (W), carbon nanotubes (CNT), and graphene.

Preferably, the electrode is formed of one or more of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Or a combination thereof.

Preferably, when the electrode is formed by a screen printing method, the electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al) A paste containing any one or two or more of Pt, Fe, Cr, Ti, Ta, W, CNT and graphene is used .

Preferably, the electrode is made of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum ), Titanium (Ti), tantalum (Ta), and tungsten (W) are arranged and bonded to a substrate peeling layer.

Preferably, the p-type thermoelectric element is made of p-type (Bi, Sb) ₂ Te ₃ , Sb ₂ Te ₃ , Bi ₂ Te ₃ , SiGe, Pb, Sn Te, PbTe, skutterudite, AgPb _m SbTe _{2 + m} , Zn ₄ Sb ₃ , MnSi, FeSi ₂ , Mg ₂ Si, Chromel alloy, platinum-rhodium alloy, iron, copper and Nichrosil alloy, , A nanocomposite, a thin film, a superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

Preferably, the n-type thermoelectric elements are n-type _{Bi 2 (Te, Se) 3} , Bi 2 Te 3, (Bi, Sb) 2 Te 3, SiGe, (Pb, Ge) Te, PbTe, skutterudite, AgPb m A single crystal made of any one or a combination of two or more of SbTe _{2 + m} , FeSi ₂ , CoSi, Mg ₂ Si, platinum-rhodium alloy, Alumel alloy, Constantant alloy, Nisil alloy, , A nanocomposite, a thin film, a superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

Preferably, the polymer comprises at least one of PDMS (polydimethylsiloxane), silicone, rubber, polyurethane, polyimide, epoxy, phenol, polyester, polycarbonate, polyarylate, polyether sulfone, And the like.

Preferably, the step (b) further comprises forming a device junction layer on the surfaces of the electrodes, wherein the device junction layer is formed by bonding the p-type thermoelectric elements and the n-type thermoelectric elements to the electrodes .

Preferably, the device junction layer is provided by one or more of solder, a conductive adhesive, a conductive adhesive film, an anisotropic conductive adhesive, and an anisotropic conductive adhesive film.

Preferably, when the solder is used as a device junction layer, the solder may be formed of at least one selected from the group consisting of silver (Ag), copper (Cu), bismuth (Bi), indium (In) Sb), lead (Pb), and gold (Au).

Preferably, the method further comprises the step of providing a barrier layer on the p-type thermoelectric elements and the n-type thermoelectric elements before the step (c).

Preferably, the barrier layer comprises at least one of nickel (Ni), copper (Cu), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt) (Ti), tantalum (Ta), tungsten (W), or a combination of two or more metals.

Preferably, the barrier layer is formed of one or both of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) The above-mentioned method is characterized by being combined.

Preferably, after the step (f), the module having the substrate peeling layer removed may be provided with an insulating layer.

Preferably, the insulating layer is formed of a material selected from the group consisting of parylene, epoxy, phenol, polyimide, polyester, polycarbonate, polyarylate, polyether sulfone, Teflon, FR4, silicone, polydimethylsiloxane Urethane, or by coating or laminating a polymer material containing at least one of the urethane and urethane.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) forming a substrate peeling layer on a temporary lower substrate; (b) forming electrodes on the substrate peeling layer of the temporary lower substrate; (c) forming p-type thermoelectric elements and n-type thermoelectric elements on the electrodes; (d) forming a substrate peeling layer on the temporary upper substrate; (e) forming electrodes on the substrate peeling layer of the temporary upper substrate; (f) arranging and bonding the electrodes of the temporary upper substrate to the p-type thermoelectric elements and the n-type thermoelectric elements of the temporary lower substrate; (g) filling the inside of the module in which the p-type thermoelectric elements and the n-type thermoelectric elements are bonded to the electrodes with a polymer; (h) peeling off the temporary upper substrate and the temporary lower substrate from the module filled with the polymer; And (i) removing both the substrate peeling layer from the module from which the temporary upper substrate and the temporary lower substrate are removed.

Preferably, after step (e), forming a device junction layer on the surface of the electrodes formed on the substrate peeling layer of the temporary upper substrate; And bonding the p-type thermoelectric elements and the n-type thermoelectric elements to the electrodes using the device junction layer.

Preferably, after step (c), providing a barrier layer to the p-type thermoelectric elements and the n-type thermoelectric elements; And further comprising:

Preferably, after the step (i), the module having the substrate delamination layer removed may be provided with an insulating layer.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) forming a substrate peeling layer on a temporary lower substrate; (b) forming electrodes on the substrate peeling layer of the temporary lower substrate; (c) forming p-type thermoelectric elements and n-type thermoelectric elements on the electrodes; (d) forming an upper electrode electrically connecting the p-type thermoelectric elements and the n-type thermoelectric elements; (e) filling the inside of the module in which the p-type thermoelectric elements and the n-type thermoelectric elements are formed with electrodes with a polymer; (f) peeling off the temporary lower substrate from the module filled with the polymer; And (g) removing the substrate delamination layer from the module from which the temporary lower substrate has been removed. The present invention also provides a method of manufacturing a thermoelectric module.

Preferably, the temporary lower substrate is a silicon (Si), glass (SiO _2), alumina (Al ₂ O _3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N _4,) (Mg), Ni, Cu, Sn, Ag, Al, Au, Pt, Fe, Cr ), Titanium (Ti), tantalum (Ta), and tungsten (W).

Preferably, after the step (g), the module having the substrate delamination layer removed is provided with an insulating layer.

According to another aspect of the present invention, there is provided a thermoelectric module manufactured by the method for manufacturing a thermoelectric module according to any one of the above-described features.

According to the present invention, since a thermoelectric module having no upper and lower substrates and filling a module with a polymer material is provided, a temperature difference between the thermoelectric elements can be largely maintained because there is no ceramic substrate having a high thermal resistance unlike the existing technology It is possible to remarkably improve the thermoelectric performance.

In addition, when the polymer material for internal filling is used as a stretchable polymer material, flexibility and stretchability can be imparted to the thermoelectric module unlike the existing technology.

1 is a schematic cross-sectional view of a thermoelectric module according to the prior art;
2 is a schematic cross-sectional view of a stretchable thermoelectric module in which an upper substrate and a lower substrate are absent and the inside is filled with a stretchable polymer according to the present invention.
3 and 4 are cross-sectional views illustrating a method of manufacturing a thermoelectric module according to a first embodiment and a second embodiment of the present invention. More specifically, FIG. 3 (a) 3 (b) is a cross-sectional view of the substrate separation layer 25 with the electrodes 23, and FIG. 3 (c) is a cross-sectional view of the substrate separation layer 25, 3 (d) is a cross-sectional view of the p-type thermoelectric element 21 and the n-type thermoelectric element 22 provided with the barrier layer 27. Fig. 3 (e) is a cross-sectional view of the thermoelectric module including the p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 bonded to the electrodes 23 of the termination boards 31 and 32 4 (f) is a cross-sectional view of filling the thermoelectric module to which the temporary substrates 31 and 32 are attached, with the stretchable polymer 24. FIG. 4 (g) In the thermoelectric module 4 (h) is a cross-sectional view of the thermoelectric module in which the temporary substrates 31 and 32 are peeled off, and the flexible thermoelectric module (not shown) having the substrate peeling layer 25 removed therefrom 20).
5A to 5C are cross-sectional views illustrating a method of manufacturing a thermoelectric module according to a third embodiment of the present invention. More specifically, FIG. 5A is a cross- 5 (b) is a sectional view of the temporary lower substrate 32 with the electrodes 23 formed on the substrate peeling layer 25, and FIG. 5 (c) is a cross- 5 (d) is a sectional view of the electrodes 23 with the n-type thermoelectric elements 22, and FIG. 5 (d) is a cross- (e) is a cross-sectional view of the p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 with the barrier layer 27, and FIG. 6 (f) 6 (g) is a cross-sectional view of the electrode 23 with the device bonding layer 26, and FIG. 6 (g) is a cross- , FIG. 6 (h) is a plan view of the temporary lower substrate 32, Sectional view of a thermoelectric module including one p-type thermoelectric elements 21 and n-type thermoelectric elements 22 joined to the electrodes 23 of the temporary upper substrate 31. Fig. 6 (i) 7 (j) is a sectional view of the thermoelectric module in which the thermoelectric module with the substrates 31 and 32 are filled with the stretchable polymer 24, and FIG. 7 (j) 7C is a sectional view of the thermoelectric module in which the temporary substrate 31 and the temporary lower substrate 32 are peeled and removed. Sectional view of a stretchable thermoelectric module 20 provided with the thermoelectric module.
8A and 9B are cross-sectional views illustrating a method of manufacturing a thermoelectric module according to a fourth embodiment of the present invention. Specifically, FIG. 8A is a cross- 8 (b) is a cross-sectional view of the temporary lower substrate 32 with the electrodes 23 on the substrate peeling layer 25, and FIG. 8 (c) is a cross- 8 (d) is a cross-sectional view of the electrodes 23 with the n-type thermoelectric elements 22, and FIG. 8 (d) (e) is a cross-sectional view of the upper electrodes 23 connecting the p-type thermoelectric elements 21 and the n-type thermoelectric elements 22, and FIG. 9 (f) 9 (g) is a cross-sectional view of a thermoelectric module filled with the stretchable polymer 24 by peeling off the temporary lower substrate 32, and Fig. 9 9 (h) is a cross-sectional view of the elastic thermoelectric module 20 provided with the substrate delamination layer 25 removed from the thermoelectric module having the temporary lower substrate 32 removed therefrom.
10 is a cross-sectional view of a stretchable thermoelectric module 60 having an insulating layer 61 according to the present invention.
11 is a cross-sectional view of a stretchable thermoelectric module 70 provided without forming a barrier layer 29 on the thermoelectric elements 21 and 22 according to the present invention.

&Lt; Example 1 >

3 (a), a nickel (Ni) substrate peeling layer 25 having a thickness of 30 nm was vacuum-deposited on a silicon wafer to be used as the temporary upper substrate 31 and the temporary lower substrate 32 . 3 mm x 6 mm and 0.1 mm thick copper pieces were bonded on the nickel substrate peeling layer 25 as shown in FIG. 3 (b) to form a plurality of copper Electrodes 23 were formed.

The solder paste is applied by screen printing to the surfaces of the copper electrodes 23 provided on the nickel substrate separation layer 25 of the temporary upper substrate 31 and the temporary lower substrate 32 as shown in FIG. the device junction layer 26 was provided as shown in the sectional view of FIG.

The p-type (Bi _0.25 Sb _0.75 ) ₂ Te ₃ pressure sintered body was cut into a size of 2 mm x 2 mm and a height of 3 mm and electroless plating of nickel was carried out on the upper surface and the lower surface to a thickness of 2 탆, Type thermoelectric elements 21 having a barrier layer 27 as shown in the sectional view. The n-type Bi ₂ (Te _0.95 Se _0.05 ) ₃ pressure sintered body was 2 mm x 2 mm in height, 3 mm, and nickel was electroless-plated on the upper and lower surfaces to form the n-type thermoelectric elements 22 having the barrier layer 27 as shown in the sectional view of FIG. 3 (d) Respectively. In this embodiment, when the p-type thermoelectric elements 21 and the n-type thermoelements 22 are bonded to the copper electrodes 23 of the temporary substrates 31 and 32 by using solder as the device bonding layer 26, And a barrier layer 27 is provided on the upper and lower surfaces of the thermoelectric elements 21 and 22 to prevent the thermoelectric elements 21 and 22 from being contaminated by the solder.

The p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 are electrically connected to the copper electrodes 23 of the temporary upper substrate 31 and the temporary lower substrate 32 on which the nickel substrate peeling layer 25 is formed Type thermoelectric elements 21 and the n-type thermoelectric elements 21 as shown in FIG. 3 (e) by melting the solder provided in the device junction layer 26 after alternately arranging the thermoelectric elements 21 in series and thermally in parallel, The thermoelectric elements 22 were bonded to the copper electrodes 23 provided on the nickel substrate release layer 25 to form a module.

The inside of the thermoelectric module to which the temporary upper substrate 31 and the temporary lower substrate 32 are attached is filled with liquid polydimethylsiloxane (PDMS) polymer and cured to form the inside of the thermoelectric module as the stretchable polymer 24 Respectively.

4 (g), a thermoelectric module filled with the PDMS stretchable polymer 24 is placed in distilled water and used as a temporary upper substrate 31 and a temporary lower substrate 32 as a nickel substrate separation layer 25 ).

As shown in FIG. 4 (h), the thermoelectric module, in which the temporary upper substrate 31 and the temporary lower substrate 32 are peeled off and removed, is charged into the nickel etching solution to remove the nickel substrate peeling layer 25, And a thermoelectric module 20 which is flexible and has elasticity according to the present invention.

In this embodiment, unlike the conventional technology, there is no rigid and rigid substrate 10, and the elastic polymer 24 filled between the p-type thermoelectric elements 21 and the n-type thermoelements 22 has flexibility and stretchability The thermoelectric module 20 can be made flexible and stretchable.

The maximum power generation output P _o of the thermoelectric modules 10 and 20 is expressed by the following equation (1).

The number in the formula 1 m is a p-type thermoelectric elements (13,21) and an n-type thermoelectric elements (14,22) pair (pn thermoelectric element pair) constituting the thermoelectric modules (10,20), α is the p-type R is the internal resistance of the thermoelectric modules 10 and 20, and T is the temperature difference between the thermoelectric elements. As shown in Equation (1), the maximum generation output P _o of the thermoelectric modules 10 and 20 is proportional to the square of the temperature difference DELTA T between the high temperature end and the low temperature end of the thermoelectric element. In the thermoelectric module 10 according to the conventional technique using the rigid ceramic substrates 11 and 12 having a low thermal conductivity, it acts on both ends of the thermoelectric elements 13 and 14 due to the high thermal resistance of the ceramic substrates 11 and 12 The temperature difference DELTA T becomes much smaller than the externally applied temperature difference. On the other hand, in the stretchable thermoelectric module 20 according to the present embodiment, since there is no ceramic substrate 11 or 12 having a high thermal resistance unlike the existing technology, the temperature difference DELTA T between the thermoelectric elements 21, It can be kept larger than the module 10 and the thermoelectric performance can be improved.

&Lt; Example 2 >

A nickel substrate peeling layer 25 having a thickness of 30 nm was formed on a silicon wafer to be used as the temporary upper substrate 31 and the temporary lower substrate 32 by sputtering. A copper paste was screen printed on the nickel substrate peeling layer 25 and sintered to form a plurality of copper electrodes 23 on the nickel substrate peeling layer 25. [

The solder paste is applied to the surface of the copper electrodes 23 provided on the nickel substrate release layer 25 of the temporary silicon substrate upper substrate 31 and the temporary lower substrate 32 by the screen printing method, 26).

The p-type (Bi _0.25 Sb _0.75 ) ₂ Te ₃ pressure sintered body was cut into a size of 2 mm x 2 mm and a height of 3 mm and electroless plating of nickel on the upper and lower surfaces was performed to form a barrier layer 27 ), a p-type thermoelectric element 21 was provided with a, n-type Bi ₂ (Te _0.95 Se _0.05) cutting a _third pressing the sintered body into a size 2 mm x 2 mm, height of 3 mm, and nickel on the bottom side facing up and having a And an n-type thermoelectric element 22 having a barrier layer 27 by electroless plating with a thickness of 2 탆.

The p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 are electrically connected to the copper electrodes 23 of the temporary upper substrate 31 and the temporary lower substrate 32 on which the nickel substrate peeling layer 25 is formed Type thermoelectric elements 21 and the n-type thermoelectric elements 22 to form a nickel substrate separation layer 25 (hereinafter, referred to as " ) To the copper electrodes (23) provided thereon.

As described above, the module formed by using the temporary upper substrate 31 and the temporary lower substrate 32 is filled with the liquid PDMS stretchable polymer 24 and cured to give the thermoelectric module body flexibility and stretchability. The thermoelectric module packed with the PDMS stretchable polymer 25 was put in distilled water and the silicon wafer used as the temporary upper substrate 31 and the temporary lower substrate 32 was peeled off from the nickel substrate peeling layer 25.

The module in which the temporary upper substrate 31 and the temporary lower substrate 32 are removed as described above is charged into the nickel etching solution to remove the nickel substrate peeling layer 25 so that the flexible and stretchable thermoelectric module 20 ).

&Lt; Example 3 >

As shown in Fig. 5 (a), a nickel substrate peeling layer 25 having a thickness of 30 nm was vacuum-deposited on a silicon wafer to be used as the temporary lower substrate 32. [ A photoresist pattern is formed on the nickel substrate peeling layer 25 and charged into a copper electroplating solution to electroplatethe copper of 10 thickness. Thereafter, the photoresist pattern is removed to form a temporary lower portion as shown in FIG. 5 (b) A plurality of copper electrodes 23 were formed on the nickel substrate peeling layer 25 of the substrate 32.

A photoresist pattern for forming the p-type thermoelectric element 21 is formed on the temporary lower substrate 32 on which the copper electrodes 23 are formed, and a p-type Sb ₂ Te ₃ thermoelectric thin film having a thickness of 30 탆 is sputtered, By removing the resist pattern, the p-type thermoelectric elements 21 are provided as shown in Fig. 5 (c).

Thereafter, a photoresist pattern for forming the n-type thermoelectric elements 22 is formed, and a 30 탆 thick n-type Bi ₂ Te ₃ thermoelectric thin film is sputtered and then the photoresist pattern is removed. Type thermoelectric elements 22 as shown in Fig.

After the p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 are formed as described above, a photoresist pattern is formed, and 2 탆 thick nickel is deposited on the barrier layer 27 and the photoresist pattern is removed Barrier layers 27 were formed on the p-type thermoelectric elements 21 and the n-type thermoelements 22 as shown in Fig. 5 (e).

Then, a nickel substrate peeling layer 25 having a thickness of 30 nm was vacuum-deposited on a silicon wafer to be used as the temporary upper substrate 31. A photoresist pattern is formed on the nickel substrate peeling layer 25 and charged into a copper electroplating solution to electroplatethe copper having a thickness of 10 mu m. Then, the photoresist pattern is removed to form a temporary upper portion A plurality of copper electrodes 23 were formed on the nickel substrate peeling layer 25 of the substrate 31.

A photoresist pattern is formed on the temporary upper substrate 31 on which the copper electrodes 23 are formed and the solder is deposited to a thickness of 10 to remove the photoresist pattern. As shown in FIG. 6 (g) The device bonding layer 26 was formed on the copper electrodes 23 of the substrate 31. [

The copper electrodes 23 provided on the temporary upper substrate 31 are arranged on the p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 provided on the temporary lower substrate 32, The solder provided as the bonding layer 27 is melted and the p type thermoelectric elements 21 and the n type thermoelectric elements 22 of the lower temporary substrate 32 are bonded to the copper electrodes 23 provided on the upper temporary substrate 31 6 (h), a thermoelectric module having a temporary upper substrate 31 and a temporary lower substrate 32 attached thereto was provided.

6 (i), the inside of the thermoelectric module to which the temporary upper substrate 31 and the temporary lower substrate 32 are attached is filled with the liquid PDMS stretchable polymer 24, and the thermoelectric module body is made flexible and stretchable . 6 (j), a thermoelectric module filled with the PDMS stretchable polymer 24 is placed in distilled water and used as a temporary upper substrate 31 and a temporary lower substrate 32 as a nickel substrate separation layer 25 ).

6 (k), the thermoelectric module from which the temporary upper substrate 31 and the temporary lower substrate 32 are removed is charged into the nickel etching solution to remove the nickel substrate peeling layer 25, And a thermoelectric module 20 having elasticity.

A nickel substrate peeling layer 25 having a thickness of 30 nm was vacuum-deposited on a silicon wafer to be used as the temporary lower substrate 32 as shown in FIG. 8 (a). A photoresist pattern is formed on the nickel substrate peeling layer 25 as described above and charged into a copper electroplating solution to electroplatethe copper having a thickness of 10 mu m. Then, the photoresist pattern is removed to remove the photoresist pattern as shown in FIG. 8B A plurality of copper electrodes 23 were formed on the nickel substrate peeling layer 25.

A photoresist pattern for forming the p-type thermoelectric elements 21 is formed on the temporary lower substrate 32 on which the copper electrodes 23 are formed as described above, and a p-type Sb ₂ Te ₃ thermoelectric thin film having a thickness of 30 탆 is sputtered The p-type thermoelectric elements 21 are provided on the copper electrodes 23 as shown in FIG. 8 (c) by removing the photoresist pattern. Thereafter, a photoresist pattern for forming the n-type thermoelectric elements 22 is formed, and a 30 탆 thick n-type Bi ₂ Te ₃ thermoelectric thin film is sputtered and then the photoresist pattern is removed. Type thermoelectric elements 22 were provided.

A photoresist pattern is formed on the temporary lower substrate 32 having the p-type thermoelectric elements 21 and the n-type thermoelements 22 as described above, copper of 10 탆 thick is sputtered and the photoresist pattern is removed, The upper electrodes 23 for electrically connecting the p-type thermoelectric elements 21 and the n-type thermoelectric elements 22 in series are formed as shown in (e) of FIG.

9 (f), the inside of the thermoelectric module provided on the temporary lower substrate 32 is filled with the liquid PDMS stretchable polymer 24 to impart flexibility and stretchability to the thermoelectric module body, 9 (g), the thermoelectric module was put in distilled water to peel off the temporary lower substrate 32 from the nickel substrate release layer 25.

Then, as shown in FIG. 9 (h), the thermoelectric module from which the temporary lower substrate 32 has been removed is charged into the nickel etching solution to remove the nickel substrate peeling layer 25, whereby the flexible and stretchable And a thermoelectric module 20 having a thermoelectric conversion module.

10, after removing the nickel substrate peeling layer 25, the insulating layer 61 is provided on the upper surface and the lower surface of the thermoelectric module 20 to form the thermoelectric module 60 ) Can be constituted.

Preferably, the insulating layer 61 is formed of a material selected from the group consisting of parylene, epoxy, phenol, polyimide, polyester, polycarbonate, polyarylate, polyether sulfone, Teflon, FR4, silicone, polydimethylsiloxane ) Or polyurethane, or a lamination of a polymer material containing at least one of them.

In this embodiment, the substrate peeling layer 25 is provided using nickel. In addition, in the present invention, it is preferable to use a metal such as Ni, Cu, Sn, Ag, Al, Au, Pt, Fe, Cr, It is possible to provide the substrate peeling layer 25 by combining a metal having a composition containing one or more of titanium (Ti), tantalum (Ta), and tungsten (W).

In this embodiment, a substrate peeling layer 25 is provided by using a vacuum deposition method and a sputtering method. In addition, in the present invention, the formation of the substrate peeling layer 25 can be accomplished by vacuum evaporation, electron beam evaporation, electroplating, electroless plating, sputtering, screen printing, electron beam evaporation, chemical vapor deposition, MBE (Molecular Beam Epitaxy) Chemical Vapor Deposition) can be used.

In this embodiment, a barrier layer 27 is provided using electroless nickel. In the present invention, the barrier layer 27 is formed of at least one selected from the group consisting of Ni, Cu, Sn, Ag, Au, Pt, ), Chromium (Cr), titanium (Ti), tantalum (Ta), tungsten (W), or combinations of two or more thereof.

In this embodiment, the barrier layer 27 is provided by electroless plating. In addition, the present invention can be applied to any thin film forming method or coating method including electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), MOCVD (Metal Organic Chemical Vapor Deposition) It is possible to provide the barrier layer 27 by using the method.

In the present embodiment, the flexible thermoelectric module 20 is constructed by bonding the p-type thermoelectric element 21 and the n-type thermoelectric element 22 to the electrode 23 by using solder as the device bonding layer 26. In addition, in the present invention, the p-type thermoelectric conversion element 21 and the n-type thermoelectric conversion element 22 are connected to the electrode (not shown) by using one of a conductive adhesive, a conductive adhesive film, an anisotropic conductive adhesive and an anisotropic conductive adhesive film as the element bonding layer 26 23).

In the thermoelectric module 20 configured by using one of the conductive adhesive, the conductive adhesive film, the anisotropic conductive adhesive, and the anisotropic conductive adhesive film as the element bonding layer 26, the barrier layer 27 is not provided The elastic thermoelectric module 70 can be constructed using the thermoelectric elements 21 and 22 that are not provided.

The solder used as the device junction layer 26 in the present invention is a solder which is composed of at least one selected from the group consisting of silver (Ag), copper (Cu), bismuth (Bi), indium (In), zinc (Zn), antimony (Sb) (Pb), and gold (Au).

In this embodiment, PDMS (polydimethylsiloxane) is used as the elastic polymer 24 filling the inside of the elastic thermoelectric module 20, and the elastic thermoelectric module 20 is provided. In addition, in the present invention, at least one of PDMS, silicone, rubber, polyurethane, polyimide, epoxy, phenol, polyester, polycarbonate, polyarylate, polyether sulfone, Teflon, FR4 is used as the polymer filler And a polymer material including one.

In this embodiment, a stretchable thermoelectric module 20 is provided using a silicon wafer as a temporary upper substrate 31 and a temporary lower substrate 32. In addition, in the present invention, silicon (Si) as the temporary upper substrate 31 and the temporary lower substrate 32, a glass (SiO _2), alumina (Al ₂ O _3), aluminum nitride (AlN), silicon carbide (SiC) , Silicon nitride (Si ₃ N ₄ ), magnesium oxide (MgO), nickel (Ni), copper (Cu), tin (Sn), silver (Ag), aluminum (Al) Wherein the substrate is composed of a composition containing at least one of Pt, Fe, Cr, Ti, Ta, and W.

In this embodiment, (Bi _0.25 Sb _0.75 ) ₂ Te ₃ pressure sintered body was used as the p-type thermoelectric element 21. (Bi, Sb) ₂ Te ₃ , Sb ₂ Te ₃ , Bi ₂ Te ₃ , SiGe, Pb, Sn Te, PbTe, skutterudite, and AgPb _m A combination of at least one of SbTe _{2 + m} , Zn ₄ Sb ₃ , MnSi, FeSi ₂ , Mg ₂ Si, Chromel alloy, platinum-rhodium alloy, iron, copper and Nichrosil alloy A single crystal, a pressure sintered body, a nanocomposite, a thin film, a superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

In this embodiment, Bi ₂ (Te _0.95 Se _0.05 ) ₃ pressure sintered body was used as the n-type thermoelectric element 22. In addition, in the present invention, the n-type thermoelectric elements (22) n-type _{Bi 2 (Te, Se) 3} , Bi 2 Te 3, (Bi, Sb) 2 Te 3, SiGe, (Pb, Ge) Te, PbTe, made of a rhodium alloy, alrumel (Alumel) alloy, constantan (Constantant) alloy, nisil (Nisil) any one of an alloy or combination of two or more - skutterudite, AgPb _m SbTe _{2 + m,} FeSi _2, CoSi, Mg ₂ Si, Pt A single crystal, a pressure sintered body, a nanocomposite, a thin film, a superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

In this embodiment, the electrode 23 is provided using copper (Cu). In addition, in the present invention, it is preferable to use a metal such as copper, nickel, tin, silver, aluminum, gold, platinum, iron, chromium, And an electrode (23) in combination with a metal having a composition containing any one or more of titanium (Ti), tantalum (Ta), and tungsten (W).

In this embodiment, the electrode 23 is provided using the electroplating method. In addition, in the present invention, the electrode 23 can be formed by electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), MOCVD (Metal Organic Chemical Vapor Deposition) And an electrode is provided by combining any one or two or more methods.

In this embodiment, the electrode 23 is provided by a screen printing method of copper paste. In addition, in the present invention, the electrode 23 provided by the screen printing method is formed of a metal such as copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al) ) Or a paste containing at least one of iron (Fe), chromium (Cr), titanium (Ti), tantalum (Ta), tungsten (W), carbon nanotubes (CNT) .

In the present invention, the electrode 23 may be formed of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum ), Chromium (Cr), titanium (Ti), tantalum (Ta), and tungsten (W) are arranged and bonded to the substrate peeling layer 25 .

As described above, an optimal embodiment has been disclosed in the drawings and specification. Although specific terms have been employed herein, they are used for purposes of illustration only and are not intended to limit the scope of the invention as defined in the claims or the claims. Therefore, those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

10: Thermoelectric module by existing technology
11. Top substrate 12. Lower substrate
13. p-type thermoelectric element 14. n-type thermoelectric element
15. Electrode 16. Device junction layer
17. Barrier layer
20. The thermoelectric module
21. p-type thermoelectric device 22. n-type thermoelectric device
23. Electrode 24. Elastic polymer
25. Substrate release layer 26. Device junction layer
27. Barrier layer
31. Temporary upper substrate 32. Temporary lower substrate
60. A thermoelectric module having an insulating layer according to the present invention
61. Insulation layer
70. A thermoelectric module according to the present invention,

Claims

(a) forming a substrate peeling layer on a temporary upper substrate and a temporary lower substrate;
(b) forming electrodes on the substrate peeling layer;
(c) arranging and bonding the p-type thermoelectric elements and the n-type thermoelectric elements to the electrodes;
(d) filling the inside of the module, in which the p-type thermoelectric elements and the n-type thermoelectric elements are bonded to electrodes, with a polymer;
(e) peeling off the temporary upper substrate and the temporary lower substrate from the module filled with the polymer; And
(f) removing the substrate peeling layer from the module from which the temporary upper substrate and the temporary lower substrate are removed; Wherein the thermoelectric module is a thermoelectric module.

The method according to claim 1,
The temporary upper substrate and a temporary lower substrate is a silicon (Si), glass (SiO _2), alumina (Al ₂ O _3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N _4,) (Mg), Ni, Cu, Sn, Ag, Al, Au, Pt, Fe, Cr ), Titanium (Ti), tantalum (Ta), and tungsten (W).

The method according to claim 1,
The substrate delamination layer may include at least one of Ni, Cu, Sn, Ag, Au, Pt, Fe, Cr, Wherein the thermoelectric module comprises a combination of a metal having a composition containing at least one of titanium (Ti), tantalum (Ta), and tungsten (W).

The method according to claim 1,
The substrate delamination layer may be formed by any one or more of the methods of vacuum deposition, electron beam deposition, electroplating, electroless plating, sputtering, screen printing, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module is provided in combination with the thermoelectric module.

The method according to claim 1,
The electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt), iron (Fe) Ti, tantalum (W), carbon nanotubes (CNT) and graphene, or a combination of two or more thereof.

The method according to claim 1,
The electrode may be formed by combining any one or more of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module comprises a thermoelectric module.

The method according to claim 6,
When the electrode is formed by a screen printing method, the electrode may be formed of a metal such as copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum A paste containing any one or more of Fe, Cr, Ti, Ta, W, CNT, and graphene is used. Of the thermoelectric module.

The method according to claim 1,
The electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt), iron (Fe) Wherein a metal piece having a composition containing at least one of Ti, Ti, Ta and W is arranged and bonded to the substrate peeling layer.

The method according to claim 1,
The p-type thermoelectric element is a p-type _{(Bi, Sb) 2 Te 3} , Sb 2 Te 3, Bi 2 Te 3, SiGe, (Pb, Sn) Te, PbTe, skutterudite, AgPb m SbTe 2 + m, Zn 4 Sb _3, MnSi, FeSi _2, Mg ₂ Si, chroman Mel (Chromel) alloy, a platinum-rhodium alloy, iron, copper, nikeuro chamber (Nichrosil) consisting of any one or a combination of two or more of the alloy single crystal, a pressure-sintered body, nanocomposite, A superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

The method according to claim 1,
The n-type thermoelectric element is made of n-type Bi ₂ (Te, Se) ₃ , Bi ₂ Te ₃ , (Bi, Sb) ₂ Te ₃ , SiGe, (Pb, Ge) Te, PbTe, skutterudite, AgPb _m SbTe _{2 + m} A pressure-sintered body, a nanocomposite, a sintered body made of any one or a combination of two or more of FeSi ₂ , CoSi, Mg ₂ Si, platinum-rhodium alloy, Alumel alloy, Constantant alloy, A superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

The method according to claim 1,
The polymer may be a polymer containing at least one of PDMS (polydimethylsiloxane), silicone, rubber, polyurethane, polyimide, epoxy, phenol, polyester, polycarbonate, polyarylate, polyether sulfone, Wherein the thermoelectric module is a thermoelectric module.

The method according to claim 1,
After the step (b)
And forming a device junction layer on the surface of the electrodes, wherein the device junction layer is used to bond the p-type thermoelectric elements and the n-type thermoelectric elements to the electrodes.

13. The method of claim 12,
Wherein the device junction layer is provided by one or more of solder, a conductive adhesive, a conductive adhesive film, an anisotropic conductive adhesive, and an anisotropic conductive adhesive film.

14. The method of claim 13,
When the solder is used as a device junction layer, the solder may contain at least one selected from the group consisting of silver (Ag), copper (Cu), bismuth (Bi), indium (In), zinc (Zn), antimony (Pb), and gold (Au). The method of manufacturing a thermoelectric module according to claim 1,

The method according to claim 1,
Prior to step (c)
and providing a barrier layer on the p-type thermoelectric elements and the n-type thermoelectric elements.

16. The method of claim 15,
The barrier layer may include at least one of nickel, copper, tin, silver, aluminum, gold, platinum, iron, chromium, titanium, Wherein the thermoelectric module is provided with a single layer or a multilayer of a combination of a metal having a composition containing any one or more of Ti, Ta, and W.

16. The method of claim 15,
The barrier layer may be formed by a combination of any one or more of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module comprises a thermoelectric module.

The method according to claim 1,
After the step (f)
And forming an insulation layer on the module from which the substrate release layer has been removed.

19. The method of claim 18,
The insulating layer may include at least one of parylene, epoxy, phenol, polyimide, polyester, polycarbonate, polyarylate, polyether sulfone, Teflon, FR4, silicone, polydimethylsiloxane Wherein the thermoelectric module is formed using a coating or lamination of a polymer material including a thermosetting resin.

(a) forming a substrate peeling layer on a temporary lower substrate;
(b) forming electrodes on the substrate peeling layer of the temporary lower substrate;
(c) forming p-type thermoelectric elements and n-type thermoelectric elements on the electrodes;
(d) forming a substrate peeling layer on the temporary upper substrate;
(e) forming electrodes on the substrate peeling layer of the temporary upper substrate;
(f) arranging and bonding the electrodes of the temporary upper substrate to the p-type thermoelectric elements and the n-type thermoelectric elements of the temporary lower substrate;
(g) filling the inside of the module in which the p-type thermoelectric elements and the n-type thermoelectric elements are bonded to the electrodes with a polymer;
(h) peeling off the temporary upper substrate and the temporary lower substrate from the module filled with the polymer; And
(i) removing both the substrate peeling layer from the module from which the temporary upper substrate and the temporary lower substrate are removed.

21. The method of claim 20,
The temporary upper substrate and a temporary lower substrate is a silicon (Si), glass (SiO _2), alumina (Al ₂ O _3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N _4,) (Mg), Ni, Cu, Sn, Ag, Al, Au, Pt, Fe, Cr ), Titanium (Ti), tantalum (Ta), and tungsten (W).

21. The method of claim 20,
The substrate delamination layer may include at least one of Ni, Cu, Sn, Ag, Au, Pt, Fe, Cr, Wherein the thermoelectric module comprises a combination of a metal having a composition containing at least one of titanium (Ti), tantalum (Ta), and tungsten (W).

21. The method of claim 20,
The substrate delamination layer may be formed by any one or more of the methods of vacuum deposition, electron beam deposition, electroplating, electroless plating, sputtering, screen printing, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module is provided in combination with the thermoelectric module.

21. The method of claim 20,
The electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt), iron (Fe) Ti, tantalum (W), carbon nanotubes (CNT) and graphene, or a combination of two or more thereof.

21. The method of claim 20,
The electrode may be formed by combining any one or more of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module comprises a thermoelectric module.

26. The method of claim 25,
When the electrode is formed by a screen printing method, the electrode may be formed of a metal such as copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum A paste containing any one or more of Fe, Cr, Ti, Ta, W, CNT, and graphene is used. Of the thermoelectric module.

21. The method of claim 20,
The electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt), iron (Fe) Wherein a metal piece having a composition containing at least one of Ti, Ti, Ta and W is arranged and bonded to the substrate peeling layer.

21. The method of claim 20,
The p-type thermoelectric element is a p-type _{(Bi, Sb) 2 Te 3} , Sb 2 Te 3, Bi 2 Te 3, SiGe, (Pb, Sn) Te, PbTe, skutterudite, AgPb m SbTe 2 + m, Zn 4 Sb _3, MnSi, FeSi _2, Mg ₂ Si, chroman Mel (Chromel) alloy, a platinum-rhodium alloy, iron, copper, nikeuro chamber (Nichrosil) consisting of any one or a combination of two or more of the alloy single crystal, a pressure-sintered body, nanocomposite, A superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

21. The method of claim 20,
The n-type thermoelectric element is made of n-type Bi ₂ (Te, Se) ₃ , Bi ₂ Te ₃ , (Bi, Sb) ₂ Te ₃ , SiGe, (Pb, Ge) Te, PbTe, skutterudite, AgPb _m SbTe _{2 + m} A pressure-sintered body, a nanocomposite, a sintered body made of any one or a combination of two or more of FeSi ₂ , CoSi, Mg ₂ Si, platinum-rhodium alloy, Alumel alloy, Constantant alloy, A superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

21. The method of claim 20,
The polymer may be a polymer containing at least one of PDMS (polydimethylsiloxane), silicone, rubber, polyurethane, polyimide, epoxy, phenol, polyester, polycarbonate, polyarylate, polyether sulfone, Wherein the thermoelectric module is a thermoelectric module.

21. The method of claim 20,
After the step (e)
Forming a device junction layer on surfaces of the electrodes formed on the substrate peeling layer of the temporary upper substrate; Wherein the p-type thermoelectric elements and the n-type thermoelectric elements are bonded to the electrodes using the device junction layer.

32. The method of claim 31,
Wherein the device junction layer is provided by one or more of solder, a conductive adhesive, a conductive adhesive film, an anisotropic conductive adhesive, and an anisotropic conductive adhesive film.

33. The method of claim 32,
When the solder is used as a device junction layer, the solder may contain at least one selected from the group consisting of silver (Ag), copper (Cu), bismuth (Bi), indium (In), zinc (Zn), antimony (Pb), and gold (Au). The method of manufacturing a thermoelectric module according to claim 1,

The method according to claim 1,
After the step (c)
providing a barrier layer on the p-type thermoelectric elements and the n-type thermoelectric elements; Further comprising the steps of:

35. The method of claim 34,
The barrier layer may include at least one of nickel, copper, tin, silver, aluminum, gold, platinum, iron, chromium, titanium, Wherein the thermoelectric module is provided with a single layer or a multilayer of a combination of a metal having a composition containing any one or more of Ti, Ta, and W.

35. The method of claim 34,
The barrier layer may be formed by a combination of any one or more of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module comprises a thermoelectric module.

The method according to claim 1,
After the step (i)
And forming an insulation layer on the module from which the substrate release layer has been removed.

39. The method of claim 37,
The insulating layer may include at least one of parylene, epoxy, phenol, polyimide, polyester, polycarbonate, polyarylate, polyether sulfone, Teflon, FR4, silicone, polydimethylsiloxane Wherein the thermoelectric module is formed using a coating or lamination of a polymer material including a thermosetting resin.

(a) forming a substrate peeling layer on a temporary lower substrate;
(b) forming electrodes on the substrate peeling layer of the temporary lower substrate;
(c) forming p-type thermoelectric elements and n-type thermoelectric elements on the electrodes;
(d) forming an upper electrode electrically connecting the p-type thermoelectric elements and the n-type thermoelectric elements;
(e) filling the inside of the module in which the p-type thermoelectric elements and the n-type thermoelectric elements are formed with electrodes with a polymer;
(f) peeling off the temporary lower substrate from the module filled with the polymer; And
(g) removing the substrate peeling layer from the module from which the temporary lower substrate has been removed; Wherein the thermoelectric module is a thermoelectric module.

40. The method of claim 39,
The temporary lower substrate is a silicon (Si), glass (SiO _2), alumina (Al ₂ O _3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si ₃ N _4,), magnesium oxide ( (Mg), Ni, Cu, Sn, Ag, Al, Au, Pt, Fe, Cr, Ti), tantalum (Ta), and tungsten (W).

40. The method of claim 39,
The substrate delamination layer may include at least one of Ni, Cu, Sn, Ag, Au, Pt, Fe, Cr, Wherein the thermoelectric module comprises a combination of a metal having a composition containing at least one of titanium (Ti), tantalum (Ta), and tungsten (W).

40. The method of claim 39,
The substrate delamination layer may be formed by any one or more of the methods of vacuum deposition, electron beam deposition, electroplating, electroless plating, sputtering, screen printing, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module is provided in combination with the thermoelectric module.

40. The method of claim 39,
The electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt), iron (Fe) Ti, tantalum (W), carbon nanotubes (CNT) and graphene, or a combination of two or more thereof.

40. The method of claim 39,
The electrode may be formed by combining any one or more of electroplating, electroless plating, vacuum deposition, sputtering, screen printing, electron beam deposition, chemical vapor deposition, MBE (Molecular Beam Epitaxy), and MOCVD (Metal Organic Chemical Vapor Deposition) Wherein the thermoelectric module comprises a thermoelectric module.

45. The method of claim 44,
When the electrode is formed by a screen printing method, the electrode may be formed of a metal such as copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum A paste containing any one or more of Fe, Cr, Ti, Ta, W, CNT, and graphene is used. Of the thermoelectric module.

40. The method of claim 39,
The electrode may be formed of at least one selected from the group consisting of copper (Cu), nickel (Ni), tin (Sn), silver (Ag), aluminum (Al), gold (Au), platinum (Pt), iron (Fe) Wherein a metal piece having a composition containing at least one of Ti, Ti, Ta and W is arranged and bonded to the substrate peeling layer.

40. The method of claim 39,
The p-type thermoelectric element is a p-type _{(Bi, Sb) 2 Te 3} , Sb 2 Te 3, Bi 2 Te 3, SiGe, (Pb, Sn) Te, PbTe, skutterudite, AgPb m SbTe 2 + m, Zn 4 Sb _3, MnSi, FeSi _2, Mg ₂ Si, chroman Mel (Chromel) alloy, a platinum-rhodium alloy, iron, copper, nikeuro chamber (Nichrosil) consisting of any one or a combination of two or more of the alloy single crystal, a pressure-sintered body, nanocomposite, A superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

40. The method of claim 39,
The n-type thermoelectric element is made of n-type Bi ₂ (Te, Se) ₃ , Bi ₂ Te ₃ , (Bi, Sb) ₂ Te ₃ , SiGe, (Pb, Ge) Te, PbTe, skutterudite, AgPb _m SbTe _{2 + m} A pressure-sintered body, a nanocomposite, a sintered body made of any one or a combination of two or more of FeSi ₂ , CoSi, Mg ₂ Si, platinum-rhodium alloy, Alumel alloy, Constantant alloy, A superlattice, a nanotube, a quantum dot, or a combination of two or more thereof.

40. The method of claim 39,
The polymer may be a polymer containing at least one of PDMS (polydimethylsiloxane), silicone, rubber, polyurethane, polyimide, epoxy, phenol, polyester, polycarbonate, polyarylate, polyether sulfone, Wherein the thermoelectric module is a thermoelectric module.

40. The method of claim 39,
After the step (g)
And forming an insulation layer on the module from which the substrate release layer has been removed.

51. The method of claim 50,
The insulating layer may include at least one of parylene, epoxy, phenol, polyimide, polyester, polycarbonate, polyarylate, polyether sulfone, Teflon, FR4, silicone, polydimethylsiloxane Wherein the thermoelectric module is formed using a coating or lamination of a polymer material including a thermosetting resin.

A thermoelectric module manufactured by the manufacturing method according to any one of claims 1 to 51.