KR20170010243A - A vacuum vapor deposition apparatus using metal nozzle pin - Google Patents

A vacuum vapor deposition apparatus using metal nozzle pin Download PDF

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Publication number
KR20170010243A
KR20170010243A KR1020150101509A KR20150101509A KR20170010243A KR 20170010243 A KR20170010243 A KR 20170010243A KR 1020150101509 A KR1020150101509 A KR 1020150101509A KR 20150101509 A KR20150101509 A KR 20150101509A KR 20170010243 A KR20170010243 A KR 20170010243A
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South Korea
Prior art keywords
zinc
nozzle
metal
film
electrode
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KR1020150101509A
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Korean (ko)
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안병율
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성호전자(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Abstract

Disclosed is a vacuum deposition apparatus for a metal deposition film including an active electrode (active area) formed by using an aluminum electrode metal film deposited on a surface of dielectric plastic film in a predetermined thickness, and a reinforced electrode (heavy edge) where a slitting edge portion of the aluminum electrode metal film is reinforced in a manner that a zinc nozzle is used together with one metal material selected from zinc, tin, and an alloy material obtained by mixing zinc and tin, and the vacuum-deposition is continuously and thickly performed along the slitting edge portion. As for the reinforced electrode, a metal nozzle pin, which has a rectangular shape and is formed therein with a hollow part, is inserted into the zinc nozzle, and the zinc is deposited on the film through the hollow part, so that the zinc is prevented from being introduced into the active electrode (active area).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a vacuum deposition apparatus using a metal nozzle pin,

The present invention relates to a vacuum deposition apparatus, and more particularly, to a vacuum deposition apparatus using a metal nozzle pin for forming an active electrode by aluminum deposition and forming a reinforced electrode by zinc deposition on a film on which aluminum is deposited.

In general, a chip component such as a multilayer ceramic capacitor (MLCC), a chip inductor, or the like is fabricated by laminating a plurality of ceramic sheets having predetermined internal electrode patterns.

Such chip components have recently been demanded for components that are very small in size and can maximize their capacity in accordance with the trend of miniaturization, ultra-integration, and multifunctionality of electronic products.

In order to increase the capacity, a multilayer ceramic capacitor (MLCC), which is a typical chip component, uses a method of increasing the dielectric constant through composition change or reducing the thickness of the dielectric sheet and increasing the number of stacked layers.

In general, a method of manufacturing a multilayer ceramic capacitor includes a series of processes in which a dielectric sheet on which an internal electrode layer is printed is alternately subjected to a degreasing process and a high-temperature firing process after lamination, a terminal is formed by applying an external electrode, and a plating process is performed on the terminal electrode portion .

In order to increase the number of layers per unit volume in order to increase the capacity of the multilayer ceramic capacitor (MLCC), there is a method of reducing the thickness of the dielectric layer and the internal electrode layer.

However, the decrease in the thickness of the internal electrode layer is relatively small as compared with the decrease in the thickness of the dielectric layer, because it is difficult to improve factors such as the size, shape, and physical properties of the metal nanoparticles forming the internal electrode layers.

Therefore, electrode formation using a thin film fabrication method such as sputtering or vapor deposition or plating has been proposed, and a method for producing a precise internal electrode pattern at a high speed in a roll-to-roll thin film apparatus for mass production is required.

Such a conventional vacuum vapor deposition apparatus includes a chamber, a mask transfer apparatus, a film transfer apparatus, and a tension control apparatus.

A thin film source is provided on one side of the chamber and a thin metal film source (hereinafter referred to as a thin film source) including metal particles in a state in which the mask M is closely adhered to the film F moving in the chamber ) To the active electrode in a constant pattern.

In recent years, efforts have been made to maximize the use time in a short charging time by applying a metal deposition film of high efficiency using a Zn product to a heavy edge portion after aluminum deposition as an active electrode.

However, in the conventional deposition structure, 100% of Al must be ideally deposited in the active region. If Zn is introduced into the active region, the characteristics of the deposited film can not be satisfied.

In other words, it is said that the sealing between the Zn nozzle and the BOAT is sealed, but when the NOZZLE hole number is small in the film width operation for the capacitor with the NOZZLE blockage or the wider capacitor, the BOAT internal pressure becomes strong and it flows out to the space other than the NOZZLE hole Or the distance between the Zn BOAT and the film (cooling drum) should be maintained at least 6 mm. As a result, the injection angle of Zn evaporated from the NOZZLE hole becomes wide and Zn may be deposited in the active region.

Therefore, since the current deposition structure is not capable of 100% deposition of Al only in the active region, a new NOZZLE structure is required to solve this problem.

KR Patent Publication No. 1998-081733 (November 25, 1998)

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-mentioned problems, and an object of the present invention is to provide a vacuum evaporation apparatus using a metal nozzle pin in which a Zn- .

According to an aspect of the present invention, there is provided a vacuum deposition apparatus using a metal nozzle pin, comprising: an active electrode formed of an aluminum electrode metal film deposited on a surface of a dielectric plastic film to a predetermined thickness; Or an alloy material in which tin or zinc and tin are mixed is used as a metal material. The metal material is continuously vacuum-deposited on the slitting edge portion of the aluminum electrode metal film using a zinc nozzle to thicken the slitting edge portion In the vacuum vapor deposition apparatus for a metal deposition film including an electrode (Heavy edgy), zinc can be deposited on the film through the hollow portion by inserting a metal nozzle pin having a hollow portion inside the reinforced electrode.

The metal nozzle pin has a stepped edge at the edge of the zinc nozzle and a protruding part provided at the hollow part and protruding into the nozzle. The protruded part has a sloped surface on one side, Can be formed in the shape of a light beam which is weakened.

Therefore, according to the vacuum deposition apparatus using the metal nozzle pin of the present invention, a metal nozzle pin is added to the zinc nozzle to narrow the spray angle, thereby preventing the Zn from flowing into the active area.

In addition, according to the vacuum vapor deposition apparatus using the metal nozzle pin of the present invention, there is an effect that the sealing can be performed more tightly by sealing in a mechanical form between the zinc nozzle and the vapor deposition unit.

1 is a cross-sectional view of a metallized film according to an embodiment of the present invention.
FIG. 2 is a main configuration diagram of a vacuum evaporator according to an embodiment of the present invention.
3 is a front view of the second deposition unit of the present invention.
4 is a side view of the second deposition unit of the present invention.
5 is a perspective view of a metal nozzle pin of the present invention.
6 is a cross-sectional view of the metal nozzle pin of Fig.
7 is a view illustrating a shape of a metal nozzle pin according to another embodiment.

It is to be understood that the words or words used in the present specification and claims are not to be construed in a conventional or dictionary sense and that the inventor can properly define the concept of a term in order to describe its invention in the best possible way And should be construed in light of the meanings and concepts consistent with the technical idea of the present invention.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise. It should be noted that the terms such as " part, "" module, " .

The terms "first "," second ", and the like throughout the specification are intended to distinguish one component from another and should not be limited by these terms. For example, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

It is to be understood that the term "and / or" throughout the specification includes all possible combinations from one or more related items. For example, the meaning of "first item, second item and / or third item" may be presented from two or more of the first, second or third items as well as the first, second or third item It means a combination of all the items that can be.

It is to be understood that when an element is referred to as being "connected" to another element throughout the specification, it may be directly connected to the other element, but other elements may be present in between. Also, other expressions describing the relationship between the components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

The terms used in the present invention are defined as follows.

"Zn Boat" is used to refer to a zinc crucible containing a zinc ingot inside.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

1 is a cross-sectional view of a metal deposition film according to an embodiment of the present invention. In the metal deposition film of the present invention, an aluminum deposition layer 151 is deposited as an electrode metal film on a base film 150, A zinc deposition layer 152 is deposited on a slitting edge portion of the aluminum deposition layer 151 to form a reinforced electrode and a layer excluding the reinforcing electrode in the aluminum deposition layer 151 is formed as a non- And an active electrode.

The base film 150 may be formed of a dielectric plastic film such as polyethylene terephthalate (PET).

The aluminum deposition layer 151 of the electrode metal film is deposited in the first deposition unit 200 to a predetermined thickness with a margin M of a predetermined width on either surface of the base film 150.

This deposition process will be described in detail below.

In the present invention, a zinc deposition layer 152 is deposited on the aluminum deposition layer 151 to form a heavy edge. In order to deposit the zinc deposition layer 152, a base film 150 (first dielectric plastic film) (Not shown) made of ordinary steel or the like in the machine direction of the film 150 is formed on the margin M of the base film 150 when the aluminum deposition layer 151 is deposited on the substrate 150. [ ), And the deposition is carried out.

After the deposition of the aluminum deposition layer 151 is completed, any one of metal materials selected from zinc, tin or alloys thereof is deposited to have a predetermined thickness at the slitting edge portion of the electrode metal film, So as to minimize the influx.

Referring to FIG. 1, it can be seen that the thickness t2 of the aluminum deposition layer 151 is thinner than the thickness t1 of the zinc deposition layer 152.

As described above, the slitting edge portion of the electrode metal film can be deposited using any one metal material selected from zinc, tin or alloys thereof. In the present invention, however, the zinc deposition layer 152 (reinforcing electrode) And the aluminum deposition layer 151 (unreinforced portion, active electrode) is made to be twice or more higher than that of the zinc deposition layer 152.

Preferably, the reinforced electrode is formed in a thick reinforced form with a thickness of 2 to 3.5: 1, and the total surface resistance value is set to 1.5-8? / Cm 2, thereby enhancing the connection effect of the metallic condenser of the capacitor not shown.

The reason for using zinc metal in the present invention is to minimize the influence of aluminum oxide and greatly improve spray adhesion ability.

Specifically, the aluminum oxide (Al 2 O 3 ) has a specific resistance of 10 16 Ω / cm, and the growth of the oxide film progresses considerably rapidly. On the other hand, zinc oxide (ZnO) or tin oxide (SnO 2 ) is a semiconducting oxide and has a resistivity of 10 3 Ω / cm.

Since the resistivity of the tin or zinc-based alloy is much lower, the spray adhesion property between the electrode and the lead is improved and the electrical characteristics of the portion, particularly the contact resistance, can be lowered. This is because it has the advantage of preventing the change of the capacitance of the capacitor.

 In addition, since the latent heat of zinc is 27.6 kcal / mole, it is lower than 70.1 kcal / mole of aluminum, so that even if the reinforcement portion is formed thick, the plastic dielectric film is less thermally damaged and the withstand voltage can be increased.

When oxidation occurs between the sprayed metal and the heavy edge, the zinc oxide is a semiconductive oxide and can reduce the contact resistance compared to the aluminum oxide.

In the above embodiments, zinc is used as a metal material for forming the reinforcing electrode. However, tin or a mixed metal thereof and a metal having a semiconductive oxide, that is, indium or an alloy thereof may be used.

Even when these alloys are used, a similar effect can be obtained by using zinc.

The metal-deposited film thus formed is used to manufacture a capacitor connected with a lead through a general winding and spraying process.

Hereinafter, a vacuum vapor deposition apparatus for manufacturing such a metallized film will be described with reference to the drawings.

As shown in FIG. 2, a vacuum deposition apparatus according to an embodiment of the present invention includes a vacuum chamber 100, a vacuum chamber 100 for holding a vacuum of the vacuum chamber 100, And a control panel 160 for controlling various masks, film transfer devices, tension control devices, and the like, including a deposition unit and a roller in a vacuum chamber 100 and a pump 140.

The vacuum chamber 100 includes a take-up roller 110 and a take-up roller 140, and a cooling drum 130.

The take-up roller 110 functions to unwind the film F one by one while the film F is wound in a roll form and the take-up roller 140 functions to rewind the unwound film F by the take-up roller 110 .

It is possible to provide a guide roller for guiding the feeding of the film F to at least one of the unwinding roller 110 and the winding roller 140 depending on the use environment or the like.

The film F unrolled from the unwinding roller 110 is guided by the cooling drum 130 and fed to the winding roller 140. At this time, the cooling drum 130 rotates due to the frictional force with the film F, (Not shown) and the film F in close contact with each other.

The portion of the cooling drum 130 where the mask and the film F are in close contact with each other is a portion where deposition of the thin film source including the metal particles provided from the first and second deposition units 200 and 300 is performed. At this time, the cooling drum 130 also functions to cool the heated film F during vapor deposition.

The vacuum pump 140 reduces the pressure inside the vacuum evaporator 100 to a predetermined pressure (degree of vacuum).

The control panel 160 is operated as a drive control device of the vacuum deposition apparatus and controls the drive roller of the mask transfer device and the cooling drum 130 to substantially synchronously drive.

In addition, the plasma pretreatment unit 120 may be interposed between the take-up roller 110 and the cooling drum 130 to improve the adhesion of the base film to the metal.

Thereafter, aluminum deposition is performed by the first deposition unit 200 and zinc deposition is performed by the second deposition unit 300 while the base film passes through the cooling drum 130. A vacuum evaporation boat, As the dew is formed in the morning, the oldest deposition method using evaporation and condensation principle is used.

It is deposited twice using a point of Al breaking point of 1700 and a Zn breaking point of 650.

The movement speed of the film F and the mask must be substantially equal to each other while the film F and the mask are moved in close contact with each other in the cooling drum 130.

If the moving speed of the film F is different from that of the mask F, it is not preferable because a difference in speed during the deposition at the deposition portion is formed in the film 150 different from the pattern of the mask.

The tension adjusting devices a1 to a5 according to the present invention are devices for adjusting the tension of the film F in order to keep the moving speed of the mask F and the film F substantially equal to each other.

Any one of the tension adjusting devices a1 to a5 may be constituted by a resistance measuring device.

Particularly, any one of a4 and a5 interposed between the cooling drum 130 and the winding roller 140 is constituted by a resistance measuring device, which can easily measure the resistance and thickness of the deposited metal by contact have.

The vacuum deposition apparatus according to the present invention basically maintains the tension of the mask substantially constant and allows the tension of the film F to be adjusted by the tension regulating device so that the film is firmly attached to the cooling drum 130 So that the film F and the mask can be moved at substantially the same speed.

The tension adjusting device according to an embodiment of the present invention includes a resistance meter a5, guide rollers a1, a2, a3, a4, and a control panel 160. [

2, a resistance meter a5 is provided between the cooling drum 130 and the winding roller 140 to measure a resistance of a portion of an active area deposited on a film and a resistance of a portion of a reinforced electrode And is electrically connected to the control panel 150 for transmission.

The guide rollers a1, a2, a3 and a4 are provided between the take-up roller 110, the cooling drum 130 and the take-up roller 140 to guide the transfer of the film F, do.

The tension of the film (F) is preferably in the range of approximately 0 to 50 kgf.

First, the first deposition unit 200 evaporates the aluminum wire on an evaporator boat heated by a high current transformer to the film F to be supplied to the first deposition unit 200, The film should be deposited with aluminum deposited, taking into account the resistance of the active area.

As described above, when the aluminum is first deposited in the first deposition unit 200 with a margin M of a predetermined width from one surface of the dielectric plastic film F having a thickness of about 0.6 to 12, Zn is vacuum deposited on the second deposition unit 300 in a thicker manner to form an electrode metal film on which the spray surface is strengthened.

The second deposition unit 300 is for forming a reinforced electrode of the electrode metal film. After the completion of the coating of aluminum in the first deposition unit 200, zinc, tin or an alloy thereof, metal indium semi- And depositing the slitting edge portion of the electrode metal film so as to have a predetermined thickness while minimizing the inflow of zinc into the aluminum vapor deposition layer 151.

To this end, the second deposition unit 300 inserts a metal nozzle pin 350 into the zinc nozzle 340 to allow accurate deposition to occur using the metal nozzle pin.

The second deposition unit 300 includes a zinc crucible 310 in which a zinc ingot 311 is stored and a zinc crucible heating coil 320 surrounding the zinc crucible 310 and a zinc nozzle 340 The zinc evaporated by the heating of the zinc nozzle heating coil 321 to be heated is deposited.

The zinc crucible heating coil 320 and the zinc nozzle heating coil 321 are used in the form of a coil wound on a ceramic material.

The zinc crucible heating coil 320 is attached to a porous metal structure (not shown) having a perforation hole surrounding the zinc crucible 310 to heat the porous metal structure so that the zinc ingot 311 of the zinc crucible 310 Heated and evaporated.

For this purpose, the porous metal structure located above the zinc ingot 311 comprises a perforated hole through which zinc is evaporated.

The zinc nozzle heating coil 321 may be configured such that one side thereof contacts the zinc nozzle 340 to directly heat the zinc nozzle.

In the present invention, when the number of the nozzle holes is small in the case of clogging of the zinc nozzle or film width for the wider capacitors, the inner pressure of the Zn BOAT becomes strong so that zinc can flow out into the space other than the zinc nozzle, ) Of Zn is to be prevented.

The protruding portion 341 is formed at a lower portion of the zinc nozzle 340 to prevent zinc from leaking out into the space other than the zinc nozzle and the protruding portion 341 is formed at the lower portion of the insertion groove formed at the upper portion of the second deposition unit 300 (330) to prevent leakage of zinc.

In order to prevent Zn from flowing into the active area, a metal nozzle pin made of SUS material is added to the zinc nozzle 340 to maintain the distance l1 between the metal nugler pin and the film 151 at 6 mm or more While narrowing the angle of ejection due to the height of the metal nozzle pin to block the entry of Zn into the active electrode portion.

Referring to a front view of the second deposition unit of FIG. 3, a side view of the second deposition unit of FIG. 4, a perspective view of the metal nozzle pin of FIG. 5 and a sectional view of the metal nozzle pin of FIG. 6, Is inserted into the zinc nozzle 340.

The zinc nozzle 340 is operated as a jig for supporting the metal nozzle pin 350. The zinc nozzle 340 constitutes a protrusion 341 at a lower portion thereof and an insertion groove 330 formed at an upper portion of the second deposition unit 300, So that it can be accurately sealed.

The engagement of the protrusion 341 with the insertion groove 330 can be prevented by using an interference fit or an adhesive.

The zinc crucible heating coil 320 heats the zinc crucible 310 and the zinc nozzle heating coil 321 operates to heat the zinc nozzle 340 so that the temperature of the zinc nozzle 340 is controlled by the temperature of the zinc crucible 310 It should be made higher than the inside temperature.

This is because the temperature of the zinc nozzle must be higher to prevent condensation from occurring in the zinc nozzle when the zinc evaporates.

3, since the metal nozzle pin 350 is heated by the zinc nozzle 340, the temperature of the metal nozzle pin through the heat conduction is also made higher than the zinc crucible side temperature.

In order for the metal nozzle pin to be further heated, the end of the metal nozzle pin is brought into contact with or positioned close to the porous metal structure surrounding the zinc crucible so that the temperature of the metal nozzle pin is increased by receiving a large amount of heat conduction, can do.

Since the zinc nozzle 340 can be formed in a rectangular shape in the machine direction of the film F as shown in the drawing, the metal nozzle pin 350 of the present invention is also inserted into the zinc nozzle 340, It can be configured in a rectangular form so that it can be performed.

Although it has been described that the zinc nozzle and the metal nozzle pin are formed in a rectangular shape, the present invention is not limited to this, but may be square.

Hereinafter, the zinc nozzle and the metal nozzle pin are configured to be rectangular, for example.

More specifically, the metal nozzle fin 350 forms a step 356 so that its edge extends over the zinc nozzle 340 in a rectangular shape.

The step 356 serves to support the nozzle pin when inserting the zinc nozzle 340 and at the same time to seal the zinc nozzle 340 and the metal nozzle pin 350 using an adhesive or the like.

 The step 356 is formed by a long end stop 351 in the long direction and a short end stop 354 in the short direction so as to be inserted and fixed in the zinc nozzle 340. In the opposite direction to the stepwise direction, When the Zn is evaporated in the zinc crucible 310, the width of the nozzle of the metal nozzle fin is gradually decreased from the zinc crucible 310 toward the film F direction.

6, one end of the step 356 of the metal nozzle fin 350 is formed with a flat surface portion 357 protruding vertically downward to closely adhere to the zinc nozzle 340, The protruding portion 352 is formed so as to protrude in the direction of the nozzle and the end portion of the protruding portion 352 is inclined in the direction of the zinc crucible 310 so as to meet with the flat surface portion 357, Respectively.

The nozzle portion 353 of the metal nozzle pin 350 is inclined downward in the film F direction by the inclined surface 355 and the inclined surface of the metal nozzle pin 350 is also inclined downwardly (Bottom and top) of the shape.

The upper portion of the metal nozzle pin 350 has a substantially wedge-like shape when viewed from the oblique surface, and the portion of the metal nozzle fin 350 that is in close contact with the zinc nozzle is flat.

In addition, the projecting portion 352 should be provided only in a rectangular step portion, that is, a long step 351, in the shape of the metal nozzle fin 350.

The metal nozzle pin 350 provided in the present invention is intended to prevent Zn from flowing into the active electrode portion when forming the reinforced electrode with Zn, The inclined surface 355 should be formed only on the inner surface of the portion 357.

In this way, the injection angle due to the height of the metal nozzle pin 350 can be narrowed, thereby preventing the inflow of Zn into the active area.

At this time, the distance between the metal nozzle pin 350 and the film F should be maintained at 6 mm to prevent Zn from being introduced more efficiently.

These metal nozzle pins may be made in different shapes to more effectively perform the nozzle function.

7, the metal nozzle pin 350a may be inserted into the zinc nozzle 340 to perform a function of the nozzle. In order to effectively perform the function of the nozzle, So as to cover the entire upper portion of the zinc crucible.

Although it has been described that the zinc nozzle and the metal nozzle pin are formed in a rectangular shape, the present invention is not limited to this, but may be square.

Hereinafter, the zinc nozzle and the metal nozzle pin are configured to be rectangular, for example.

More specifically, the metal nozzle fin 350a is rectangular and forms a step 356a so that its edge extends over the zinc nozzle 340. [

The step 356a serves to support the nozzle pin when inserting into the zinc nozzle 340, and at the same time, it functions to seal the zinc nozzle 340 and the metal nozzle pin 350a using an adhesive or the like.

 The step 356a is formed by a long end tang 351a and a short end tie 354a which are long in the longitudinal direction and inserting and fixing in the zinc nozzle 340. In a direction opposite to the end tangential direction, When the Zn is evaporated in the zinc crucible 310, the width of the nozzle is gradually decreased toward the film F in the zinc crucible 310.

One end of the step 356a of the metal nozzle fin 350a has a flat surface portion 357a which is inclined downwardly in the direction of the zinc crucible 310.

The end of the flat surface portion 357a is inclined downward so as to cover the entire surface of the zinc crucible 310. The opposite surface of the step 356a forms a protrusion 352a so as to protrude in the direction of the nozzle, The end of the protrusion 352a is inclined in the direction of the zinc crucible 310 so as to meet with the flat surface portion 357 to form the inclined surface 355a.

That is, the nozzle portion 353a of the metal nozzle pin 350a is inclined downward in the direction of the film F by the inclined surface 355a, and the inclined surface of the metal nozzle pin 350a is inclined upward The shape of the upper side and the lower side).

The upper portion of the metal nozzle pin 350a has an approximately wedge shape, and the portion of the metal nozzle fin 350a which is in close contact with the zinc nozzle is formed in a plane shape but inclined.

7, the nozzle portion 353a of the present invention has a shape in which the width W2 of the lower end is wider than the width W1 of the upper end and the width of the lower end of the nozzle portion W2 are formed to be equal to or larger than the upper width W3 of the zinc crucible 310 so that all of the Zn evaporated in the zinc crucible 310 is evaporated upward through the metal nozzle fin 350a.

The metal nozzle pin 350a according to another embodiment is also designed to block the introduction of Zn into the active electrode portion when forming the reinforced electrode with Zn, Only the inclined surface should be formed.

In this way, the injection angle due to the height of the metal nozzle pin 350a can be narrowed, thereby preventing the Zn from flowing into the active area.

Capacitors produced by this process showed little change in capacitance during use and increased potential hardness.

In order to reduce the insulation failure at high potential hardness, the energy to self-heal the defective part by clearing the defective part by making the deposition film thinner and increasing the resistance of the aluminum metal electrode, that is, the active area part .

Since the aluminum deposited film is thinner than the zinc (Zn) based deposited film, it is healed with less energy.

In practice, however, there is no significant difference in the density or surface electrical resistance of the deposited layer. The thickness of the aluminum evaporated film is 2 / to about 250, 4 to 5 / to about 180, and the self-healing energy is made small by using a high resistance material. The insulation resistance becomes stable.

As a result of the performance and the test results of the capacitor manufactured by the above embodiment, the capacitor manufactured using the film of the present invention has less change in capacitance and tan as time passes compared with the conventional capacitor, From the results of the breakdown voltage (BDV) measurement, it was found that the capacitor manufactured by the present invention is superior to the conventional capacitor in terms of breakdown voltage.

The present invention is further characterized in that a discharge pipe (310a) for discharging the internal pressure of the zinc crucible is provided between the finishing lid (special material fiber) constituting the zinc crucible (310).

This is effective to prevent the inflow of Zn into the active electrode portion due to the internal pressure of the zinc crucible 310 due to leakage through the nozzle gap or the like.

That is, the control panel 160 controls the vacuum pump 140 to operate so as to keep the degree of vacuum in the vacuum evaporator constant. In this case, when the inner pressure of the zinc crucible is increased, zinc may flow out through the nozzle gap instantaneously , And the instantaneous pressure change can be coped with by temporarily storing the Zn vapor due to the increased pressure temporarily in the discharge cylinder 310b through the discharge pipe 310a of the present invention.

It is preferable that the discharge pipe 310a is installed with a pipe of about 12 mm.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art.

110: unwinding roller 120: plasma pretreatment unit
140: take-up roller 150: film
151: aluminum deposition layer 152: zinc deposition layer
160: control panel 200: first deposition unit
300: second deposition unit 310: zinc crucible
320: Zinc crucible heating coil 321: Zinc nozzle heating coil
330: insertion groove 341: protrusion
340: zinc nozzle 350: metal nozzle pin

Claims (4)

An active electrode is formed of an aluminum electrode metal film deposited on a surface of a dielectric plastic film to a predetermined thickness and an alloy material selected from an alloy material in which zinc or tin or zinc and tin are mixed is used as the aluminum electrode metal In a vacuum deposition apparatus using a metal nozzle pin for forming a heavy edge in which a slitting edge portion of a film is continuously thickened by vacuum deposition using a zinc nozzle to reinforce the slitting edge portion, ,
The reinforcing electrode
Wherein a metal nozzle pin having a hollow portion formed therein is inserted into a zinc nozzle and zinc is deposited on the film through the hollow portion.
The method according to claim 1,
The metal nozzle pin
A step whose edge extends over the zinc nozzle;
A protrusion provided on the hollow portion and protruding into the nozzle;
Wherein the metal nozzle pin is formed of a metal.
3. The method of claim 2,
The protrusion
Wherein the inclined surface has a shape of a coherent light whose width is narrower in the film direction.
The method according to claim 1,
The reinforcing electrode
A zinc crucible in which a zinc ingot is stored;
A zinc nozzle through which the heated zinc is ejected;
A metal nozzle pin inserted into the zinc nozzle;
Wherein the zinc is deposited on the film by a vapor deposition unit comprising a metal nozzle pin.






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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980081733A (en) 1997-04-25 1998-11-25 히라이카쯔히코 Metal Deposition Film, Manufacturing Method and Capacitor Using the Same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980081733A (en) 1997-04-25 1998-11-25 히라이카쯔히코 Metal Deposition Film, Manufacturing Method and Capacitor Using the Same

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