KR20170004798A - Method for patterning amorphous alloy, a amorphous alloy pattern structure using the same, dome switch and method for thereof - Google Patents

Abstract

Disclosed is an amorphous alloy patterning method. The method of the present invention comprises: a step of forming a pattern on a base material to define an amorphous alloy deposition area; a step of forming an amorphous alloy deposition layer on the patterned base material; and a step of etching an area other than the amorphous alloy deposition area. On the other hand, disclosed is a dome switch. The dome switch comprises: a metal layer having a dome shape of which a center is protruded and electrically connected to a circuit board on a center thereof when an external force acts on the protruded center; and an amorphous alloy layer disposed over the metal layer. As such, an amorphous alloy structure having improved durability and reliability is able to easily be manufactured.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an amorphous alloy patterning method, an amorphous alloy patterning method, a dome switch, and a dome switch manufacturing method,

The present invention relates to an amorphous alloy patterning method and an amorphous alloy pattern structure produced by the method. More particularly, the present invention relates to an amorphous alloy patterning method capable of efficiently fabricating a pattern structure using an amorphous alloy, It is about pattern structures.

The present invention relates to a dome switch and a method of manufacturing the same, and more particularly, to a dome switch and a dome switch manufacturing method using an amorphous alloy.

As automobiles, aviation, heavy equipment, and electronics industries have become more sophisticated in the modern industrial society, it has been absolutely required to develop materials that exceed the limit characteristics of existing materials.

There have been efforts to improve the properties of the crystalline material through the improvement of the coagulation method and the heat treatment in relation to the application of the crystalline material to the industry, and many materials improved by this effort have been utilized in the actual industrial phenomenon.

However, Hyundai Industries wants materials with excellent properties even in extreme conditions. Due to this demand, crystalline materials show their limitations.

Accordingly, there is a need for a technique capable of efficiently fabricating a structure that can be utilized for various purposes by using materials having improved characteristics compared to the prior art.

It is an object of the present invention to provide an amorphous alloy patterning method capable of efficiently fabricating a pattern structure having an appropriate pattern for an application by using an amorphous alloy, Pattern structure.

It is still another object of the present invention to provide a dome switch and a dome switch manufacturing method using the amorphous alloy with improved durability and reliability.

According to an aspect of the present invention, there is provided an amorphous alloy patterning method comprising: forming a pattern for defining an amorphous alloy deposition region on a base material; forming an amorphous alloy deposition layer on the base material on which the pattern is formed And etching the region other than the amorphous alloy deposition region.

In this case, the step of forming the amorphous alloy deposition layer may be a sputtering method.

In this case, the step of forming the amorphous alloy deposition layer may be performed at room temperature to 300 ° C or less.

The forming of the pattern may include attaching a patterned film on the upper surface of the base material in a region in which the region other than the amorphous alloy deposition region is exposed, forming a material layer that reacts with the acid on the exposed region of the film , And removing the film.

In this case, the film may be composed of at least one of a polymer and a ceramic.

The forming of the pattern may include forming a protective film on the upper surface of the base material, forming a material layer that reacts with the acid on the upper surface of the protective film, and forming the protective film and material formed on the amorphous alloy deposition region And removing the layer.

In this case, the protective layer may be formed by any one of coating, vapor deposition, anodizing, and spin coating.

In this case, the protective film may be at least one of an oxide, a polymer, a ceramic, and a metal alloy.

Meanwhile, the removing step may remove the protective layer and the material layer by any one of diamond cutting, grinding, and laser marking.

Meanwhile, the etching step may etch the material layer and the amorphous alloy deposition layer formed in regions other than the amorphous alloy deposition region.

Meanwhile, the base material may be at least one of metal, ceramics, and polymers.

The amorphous alloy may be at least one selected from the group consisting of Fe, Cu, Zr, Ti, Hf, Zn, Al, Ag, Or the like.

Meanwhile, the amorphous alloy deposition layer may include an amorphous alloy composite obtained by reacting an amorphous alloy with nitrogen gas.

In this case, the amorphous alloy composite may contain 10% or more and 90% or less of the crystalline phase, and the crystal grain size of the crystalline phase may be 5 nm or more and 1000 nm or less.

Meanwhile, the thickness of the amorphous alloy deposition layer may be 5 nm or more and 10 m or less.

On the other hand, the step of etching may use at least one of nitric acid, sulfuric acid and hydrofluoric acid.

On the other hand, the material layer may be any one of copper and silicon oxide.

The method may further include washing the surface of the base material before forming the pattern.

Meanwhile, the present invention includes an amorphous alloy pattern structure manufactured by a method according to an embodiment of the present invention.

In this case, the amorphous alloy pattern structure may have a case shape of an electronic device.

Meanwhile, the dome switch according to an embodiment of the present invention has a dome shape protruding from the center, and a metal layer which is electrically connected to the circuit board when the center is protruded and an external force acts on the center, And an amorphous alloy layer disposed on top of the amorphous alloy layer.

In this case, the thickness of the amorphous alloy layer may be 0.1 탆 or more and 5 탆 or less.

The metal layer may include a first metal layer disposed under the amorphous alloy layer, and a second metal layer disposed under the first metal layer, the second metal layer being different from the first metal layer.

In this case, the first metal layer may be STS, and the second metal layer may be at least one of gold, silver, and copper.

The first metal layer may further include a third metal layer disposed on the amorphous alloy layer.

In this case, the metal layer may be at least one of gold, silver, and copper, and the third metal layer may be STS.

The second metal layer may further include a second amorphous alloy layer disposed on the third metal layer.

Meanwhile, a dome switch manufacturing method according to an embodiment of the present invention has a dome shape protruding from the center, and when an external force is applied to the protruded center, the center is in contact with the circuit board, And forming an amorphous alloy layer on the metal layer.

In this case, the forming of the amorphous alloy layer may use at least one of sputtering, spray coating and cladding.

On the other hand, the step of forming the amorphous alloy layer may be performed at room temperature to 500 ° C or less.

FIG. 1 illustrates an example of an electronic device using an amorphous alloy pattern structure and a dome switch fabricated according to an embodiment of the present invention.
FIG. 2 is an enlarged cross-sectional view taken along line AA 'of the electronic apparatus shown in FIG. 1,
FIG. 3 is a flow chart for explaining an amorphous alloy patterning method according to an embodiment of the present invention,
FIGS. 4 to 9 are schematic views for explaining an amorphous alloy patterning method according to an embodiment of the present invention;
FIGS. 10 to 15 are schematic views for explaining an amorphous alloy patterning method according to another embodiment of the present invention. FIG.
16 is a schematic view for explaining the operation of the dome switch according to an embodiment of the present invention,
17 is a flowchart illustrating a method of manufacturing a dome switch according to an embodiment of the present invention,
18 to 21 are views for explaining the configuration of a dome switch according to various embodiments of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, the following embodiments can be modified into various other forms, and the technical scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

Also, to "include" an element means that it may include other elements, rather than excluding other elements, unless specifically stated otherwise. Further, various elements and regions in the drawings are schematically drawn. Accordingly, the technical spirit of the present invention is not limited by the relative size or spacing depicted in the accompanying drawings.

FIG. 1 is a view illustrating an example of an amorphous alloy pattern structure and an electronic device using a dome switch according to an embodiment of the present invention. Referring to FIG.

Referring to FIG. 1, the electronic device 100 may include a case 120 and a button unit 130. At this time, the case 120 of the electronic apparatus 100 shown in FIG. 1 is an amorphous alloy pattern structure manufactured according to an embodiment of the present invention, and includes a base material 101 constituting a case and an amorphous alloy deposition layer 102 can do.

A button switch including a dome switch and a button unit 130 including an amorphous alloy layer, though not shown, will be described in detail with reference to FIG.

FIG. 2 is an enlarged cross-sectional view taken along the line A-A 'of the electronic apparatus shown in FIG. 1. FIG.

Referring to FIG. 2, the cross-section of the illustrated electronic device may include an interior space 110 of the electronic device and a case. The internal space 110 of the electronic device may include components such as a display, a circuit board, a storage unit, and a control unit. Parts of the inner space are not shown for convenience of explanation. The case of the electronic device may include a base material 101 and an amorphous alloy deposition layer 102. [

Here, the base material 101 means a material to be formed with an amorphous alloy pattern according to an embodiment of the present invention.

The base material may be selected from the group consisting of Fe, Ni, Cu, Al, Ti, Zn, Hf, Zr, Alloys such as stainless steel (SUS), silicon carbide (SiC), silicon nitride (SiN), and the like, , Ceramics such as oxides or nitrides of metals such as zirconia, alumina and tungsten carbide, oxides or nitrides of alloys, polymers such as polyvinyl chloride resins, polystyrene resins, polyethylene resins, phenol resins and melamine resins.

Although FIG. 2 shows an amorphous alloy pattern structure manufactured according to an embodiment of the present invention without any treatment on the surface of the base material 101, after processing the surface of the base material, the amorphous alloy pattern structure according to an embodiment of the present invention Can be prepared.

The amorphous alloy deposition layer 102 is formed using an amorphous alloy and may be formed to a thickness of 5 nm or more and 10 m or less.

Here, an amorphous alloy refers to a metal having a structure in which atoms are disorderly arranged in contrast to metal crystals periodically arranged in a wide range of metal atoms.

Common metal crystals are characterized by the fact that the atoms are arranged periodically and are easy to deform due to their ease of processing, but they mean that the strength is weak.

Amorphous alloys have homogeneous isotropic properties without anisotropy, grain boundaries, surface defects, segregation, etc. appearing in general crystal structure alloys.

Compared with general crystal structure alloys, amorphous alloys are excellent in mechanical strength because they have no crystallographic anisotropy and exhibit excellent corrosion resistance due to uniform structure and composition.

In addition, although the metal crystal has crystal grains and has a grain size smaller than that of the crystal grains, it is difficult to pattern the grains. However, since the amorphous alloy has a very small or no grain size, the patterning size is not limited and the patterning can be performed as desired have.

Amorphous alloys can be made by liquid quenching, which generally quenches a liquid metal in a crystal structure alloy by melting it in a very short time. In addition, it can be formed by vacuum deposition or sputtering method in which a metal is directly formed as a gas.

The amorphous alloy used in one embodiment of the present invention may have a grain size of less than 1 nm, an amorphous content greater than 50 at.% (Atomic%), preferably greater than 90 at.% , And more preferably greater than 99 at.%.

The amorphous alloy in one embodiment of the present invention may be at least one selected from the group consisting of Fe, Cu, Zr, Ti, Hf, Zn, Al, Ag ), Gold (Au), cobalt (Co), nickel (Ni), magnesium (Mg), tin (Sn), palladium (Pd), phosphorus (P), beryllium (Be), niobium (Ga), silicon (Si), boron (B), and carbon (C).

The amorphous alloy deposition layer 102 may comprise an amorphous alloy composite.

The amorphous alloy composite is produced by reacting an amorphous alloy with nitrogen gas. The amorphous alloy composite may have a crystalline content of 10 at.% Or more to 90 at.% Or less, and the crystal grain size may be 5 nm or more and 1000 nm or less.

Hereinafter, a method of manufacturing the amorphous alloy pattern structure will be described.

The amorphous alloy patterning method according to an embodiment of the present invention can use a method of implementing micro and nano patterning through molding at a temperature of a supercooled liquid phase section of an amorphous alloy.

Alternatively, a method of locally crystallizing the surface of the amorphous alloy using an electromagnetic and optical energy source and dissolving the crystallized portion by an electrochemical polishing method may be used to realize the micro and nano patterning of the amorphous alloy.

Alternatively, a method of depositing an amorphous alloy deposition layer on a base material and implementing micro and nano patterning using selective etching may be used.

However, in the method of patterning through the molding at the temperature of the supercooled liquid phase section of the amorphous alloy, there is a problem that an initial forming mold must be manufactured, and there is a restriction on the use of equipment due to the necessity of vacuum or atmosphere, .

In addition, the method of locally crystallizing the surface of the amorphous alloy as an energy source and dissolving the crystallized part by electrochemical polishing method to pattern it has a disadvantage in that the localized heat treatment by the heat source is difficult and the patterning accuracy is limited.

Therefore, the following description will be made using deposition of an amorphous alloy deposition layer and amorphous alloy patterning method through selective etching.

3 is a flowchart illustrating a method of patterning an amorphous alloy according to an embodiment of the present invention.

Referring to FIG. 3, a pattern for defining an amorphous alloy deposition region is formed on a base material (S310). Specifically, a pattern can be formed on the base material by using a patterned film or a mechanical method.

Here, the amorphous alloy deposition region means a region where the amorphous alloy deposition layer is formed on the surface of the base material. The amorphous alloy deposition region can be defined by a pattern, which will be described in detail below with reference to Figs. 4 to 7 and Figs. 10 to 13. Fig.

Next, an amorphous alloy deposition layer may be formed on the patterned base material (S320). Specifically, an amorphous alloy deposition layer may be formed on a base material on which a pattern is formed by using physical vapor deposition (PVD) or chemical vapor deposition (CVD).

Here, PVD means a method in which a metal is vaporized in a vacuum to evaporate vaporized metal atoms without being oxidized, and is deposited on a base material. In addition, PVD includes vacuum deposition, sputtering, and ion plating.

Here, the vacuum deposition means a method in which the vapor of the alloy produced by heating the metal at a high temperature is closely adhered to the base material in the form of a thin film. There is an advantage that the deposition rate is excellent and the operation is easy.

Sputtering is a type of vacuum evaporation, which means a method of generating a film on the surface of a base material by atomizing the target alloy by colliding a non-reactive gas such as argon produced by generating plasma at a relatively low degree of vacuum to the target alloy. Reactive gases may be used to deposit reactants of target atoms and gases on the surface of the substrate.

Ion plating is a new technique of vacuum deposition, which means a vacuum deposition method in which a positive charge is applied to ionize the vapor of an alloy, and the base material is negatively biased to a high voltage between the two. The density of the formed film is high and a compound film can be obtained.

Here, CVD means a method in which a vapor of an alloy compound is flowed around a base material which maintains a high temperature, and a film is formed on the surface of the base material by thermal decomposition or hydrogen reduction.

In one embodiment of the present invention, the amorphous alloy deposition layer is formed by a sputtering method, but the deposition method is not limited to this. Specifically, the amorphous alloy deposition layer can be formed at a temperature between room temperature and 300 ° C. Here, the normal temperature may be 25 캜.

Next, the region other than the amorphous alloy deposition region is etched (S330). Specifically, a region other than the amorphous alloy deposition region can be etched using a chemical etching method.

Here, etching means a processing method using a chemical corrosion action. The necessary portion is coated to prevent corrosion by the etching solution. The amorphous alloy is resistant to corrosion, and only the amorphous alloy deposition layer formed on the material layer reacting with the acid and the acid is removed by the etching solution. As the etching solution, nitric acid, hydrofluoric acid, sulfuric acid, phosphoric acid, acetic acid, and sodium picrate may be used.

FIGS. 4 to 7 are schematic views for explaining a step of forming a pattern for defining an amorphous alloy deposition region on a base material according to an embodiment of the present invention. FIG.

Referring to FIG. 4, first, a base material 400 on which an amorphous alloy deposition layer is to be formed is prepared. Cleaning the upper surface of the parent material 400 on which the amorphous gold layer is to be deposited.

In the next step, as shown in Fig. 5, the patterned film 410 is attached to the upper surface of the base material 400 in such a manner that the region 402 other than the amorphous alloy deposition region is exposed.

Here, the amorphous alloy deposition region 401 means a region in which an amorphous alloy deposition layer is formed on the base material 400, and can be defined by a pattern.

The region 402 other than the amorphous alloy deposition region means a region in which the amorphous alloy deposition layer is not formed on the base material 400 except for the amorphous alloy deposition region 401. [

A film 410 patterned in such a manner that a region 402 other than the amorphous alloy deposition region is exposed means that when the film is adhered to the upper surface of the parent material 400, only the region where the amorphous alloy deposition layer is formed Means a film that has been patterned so as to be adhered thereto. Therefore, no film adheres to the region 402 other than the amorphous alloy deposition region.

The film 410 may be composed of at least one of a polymer and a ceramic. For example, a polyester film, a polycarbonate film, glass, or the like can be used.

Then, in a region 402 other than the amorphous alloy deposition region in which the film is not shown in FIG. 5, a material layer 420 that reacts with the acid is formed as shown in FIG.

The acid-reactive material layer 420 may then be etched to remove the amorphous alloy deposition layer deposited in the undesired region. As the substance reacting with the acid, most crystalline metals such as copper, nickel, and tin and oxides such as silicon oxide and aluminum oxide can be used.

As a method of forming a material layer that reacts with an acid, a material layer can be formed by one of coating, vapor deposition, electrolytic plating and electroless plating.

Here, the coating means a method of coating a surface of a base material with a coating material to form a coating film. The coating can prevent the corrosion of the base material, increase the durability, and make the surface of the object beautify.

Plating means that the surface of the base material is covered with another metal thinly. The plating includes electrolytic plating using the principle of electrolysis and electroless plating in which the reducing agent component is contained in the plating solution component and the metal is reduced by the reducing agent to precipitate on the surface of the base material. Electroless plating is advantageous in that it has a constant thickness compared to electrolytic plating.

In FIG. 6, the material layer is shown as being formed by the thickness of the film. However, the material layer may be formed thinner than the film, or may be formed so as to cover the upper portion of the film.

Then, as shown in Fig. 7, the patterned film 410 is removed. The patterned film is removed so that the material layer 421 that reacts with the acid remains only in regions other than the amorphous alloy deposition region. Thereby, a pattern for defining the amorphous alloy deposition region can be formed on the base material.

FIG. 8 is a schematic view showing a step of forming an amorphous alloy deposition layer on a base material on which a pattern is formed. FIG.

Referring to FIG. 8, an amorphous alloy deposition layer 430 is formed on a patterned base material by forming a material layer 421 that reacts with an acid. Specifically, an amorphous alloy deposition layer can be formed on a base material by using a sputtering method in general. However, the present invention is not limited thereto, and both of the PVD methods described in the description of FIG. 3 are available, so that the same description is omitted.

Fig. 9 is a schematic view showing the step of etching a region other than the amorphous alloy deposition region.

Referring to FIG. 9, a region other than the amorphous alloy deposition region is etched. Here, the step of etching uses the etching method described in the description of FIG. 3, so that the same description is omitted.

On the other hand, the material layer reacting with the acid formed in the region other than the amorphous alloy deposition region reacts with and is removed from the etching solution, thereby removing the amorphous alloy deposition layer formed on the material layer. As a result, the amorphous alloy deposition layer 431 can remain only in the amorphous alloy deposition region.

FIGS. 10 to 13 are schematic views for explaining a step of forming a pattern on a base material to define an amorphous alloy deposition region according to another embodiment of the present invention. FIG.

Referring to FIG. 10, a base material 500 on which an amorphous alloy deposition layer is to be formed in a desired region is prepared. Cleaning the upper surface of the base material 500 on which the amorphous gold layer is to be deposited.

In the next step, a protective film 540 is formed on the upper surface of the base material 500, as shown in Fig.

Here, the protective film 540 is for protecting the base material from the etching solution, and may be formed over the entire upper surface of the base material 500, and may be at least one of oxide, polymer, ceramic, and metal alloy.

Here, the metal alloy means a composite produced by bonding an organic compound or a metal ion to a metal or metal ion. Metal alloy is _{Ni (CO) 4, MoO 2} (CH 3 CHOCHOCHCOCH 3) 2, [Cu (NH 3) 4] 2+, Rh [(C 6 H 5) 3 P] Sen (metallocene) in ₃ Cl or the like metal, A wide range of compounds including metalloporphyrins such as chlorophyll, heme, and metal enzymes such as carboxypeptidase A, and the like.

In forming the passivation layer 540, a passivation layer may be formed by any one of coating, vapor deposition, anodizing, and spin coating.

Here, anodizing refers to a method in which a corrosion-resistant oxide film is formed on the surface of a metal by electrolyzing an electrolytic aqueous solution using a metal as an anode. Corrosion resistance, abrasion resistance, paint adhesion, and metal-like luster.

Spin coating is a coating method in which a solution or a liquid material of a material to be coated is dropped onto a base material, and the base material is rotated at a high speed to spread thinly. The coating thickness is controlled by the angular velocity of the base material rotation, and the faster the angular velocity, the thinner the coating thickness.

Then, as shown in FIG. 12, a material layer 520 reacting with the acid is formed on the upper surface of the protective film 540 formed.

Here, the material layer 520, which reacts with the acid, may be etched to remove the amorphous alloy deposition layer formed in regions other than the amorphous alloy deposition region.

A material layer 520 that reacts with the acid on the upper surface of the protective film 540 is formed over the entire surface of the protective film. Specifically, the step of forming the material layer 520 that reacts with the acid may form the material layer 520 by a method such as painting, vapor deposition, electroplating, and electroless plating.

Then, as shown in Fig. 13, the protective film and the material layer formed on the amorphous alloy deposition region 501 are removed. As a result, the amorphous alloy deposition layer remains only in the desired area of the upper surface of the base material.

Here, the amorphous alloy deposition region 501 means a region in which the amorphous alloy deposition layer is formed on the base material 500.

The region 501 other than the amorphous alloy deposition region means a region on the base material 500 except for the amorphous alloy deposition region 501 where the amorphous alloy deposition layer is not formed.

13, the protective film and the material layer of the amorphous alloy deposition region 501 are removed, and the protective film 541 and the material layer 521 of the region 502 other than the amorphous alloy deposition remain on the base material, .

The step of removing the protective film and the material layer is carried out by a mechanical method. Specifically, it may be one of dia-cutting, grinding, and laser marking.

A method of cutting a base material with a cutting tool is called cutting, and a method of cutting a base material using a cutting tool made of diamond is referred to as diamond cutting. The diacutted surface is poor in corrosion resistance and very susceptible to scratch resistance. Accordingly, when the amorphous alloy deposition layer is deposited on the diattened surface using the amorphous alloy patterning method according to an embodiment of the present invention, the corrosion resistance and scratch resistance can be improved while maintaining the design and metallic luster.

The term " grinding " means a processing method using a grinding machine that cuts the surface of a base material to a grinding stone which rotates at a high speed. With the grinding machine, it is precise in dimensions, it is easy to polish a very hard surface, and the surface is beautiful. Examples of grinding wheels include diamond, emery, spinel, fused alumina, silicon carbide, and CBN (cubicboronitride).

Laser marking refers to a method of engraving a pattern on a surface of a base material by using a laser. It can be used flexibly in a wide range of base materials such as semiconductors and metals in various industrial environments, and is advantageous in that it is easy to use and economical.

14 is a schematic diagram showing a step of forming an amorphous alloy deposition layer on a base material on which a pattern is formed.

Referring to FIG. 14, an amorphous alloy deposition layer 530 is formed on a patterned base material by a mechanical method.

Specifically, the amorphous alloy deposition layer can be generally formed by using a sputtering method. However, the present invention is not limited thereto, and all the PVD methods described in the description of Fig. 3 can be used.

Referring to FIG. 15, a step of etching a region other than the amorphous alloy deposition region may be performed.

On the other hand, the material layer 521 reacting with the acid formed in the region 502 other than the amorphous alloy deposition region is removed by reaction with the etching solution, so that the amorphous alloy deposition layer formed on the material layer is also removed. As a result, the amorphous alloy deposition layer 531 remains only in the desired region.

Meanwhile, as shown in FIG. 15, the amorphous alloy pattern structure manufactured by the method according to another embodiment of the present invention may include a protective film 541.

The amorphous alloy pattern structure manufactured by the method described above can be utilized in various ways such as a casing of an electronic device, a part thereof, internal parts, and a flexible nanoelectrode.

According to various embodiments of the present invention, an amorphous alloy pattern structure having an appropriate pattern can be efficiently manufactured. In particular, an amorphous alloy structure having a fine pattern can be produced more precisely than in the prior art. As a result, it is possible to obtain an ultra-high strength material by using an amorphous alloy, light weight can be achieved by increasing the specific strength, and an amorphous alloy pattern structure with improved corrosion resistance and wear resistance can be obtained by having a uniform microstructure. As a result, an amorphous alloy pattern structure applicable to a minute portion of an electronic device case can be obtained.

16 is a view schematically showing the operation of the dome switch according to an embodiment of the present invention.

16, the button switch 1600 according to one embodiment of the present invention includes a button portion 130, a dome switch 1610, a circuit board 1620, contacts 1631 and 1632 connected to the positive electrode, (1640).

The button unit 130 receives a force from the outside and presses the dome switch 1610. Specifically, when the user presses the button portion provided on the electronic device with the finger, the button portion 130 directly receives the pressing force of the user and transmits the pressed force to the dome switch 1610. Thus, the dome switch 1610 and the circuit board 1620 Contact.

The dome switch 1610 is mounted on the circuit board 1620 and may be electrically connected to the circuit board 1620 by contacting the circuit board 1620 when receiving an external force equal to or greater than a predetermined size through the button unit 130. Specifically, the dome switch 1610 has a dome shape protruding from the center. When the center of the dome switch 1610 receives a force of a predetermined magnitude or more at the protruded center, the dome switch 1610 comes into contact with the contact 1640 on the circuit board 1620, .

On the other hand, the dome switch 1610 can be elastically deformed with respect to a certain magnitude and a predetermined number of external forces. At this time, the elastic deformation may be a deformation when the deformation caused by the external force is completely recovered by removing the external force. For example, the dome switch 1610 can be restored to its original dome shape once the external force that depressed the center of the work is removed. For this reason, the dome switch 1610 can perform the role of a switch by repeating contact and opening with the circuit board 1620, and controlling the electrical connection.

On the other hand, the dome switch 1610 may include a dome-shaped crystalline metal and an amorphous alloy layer. Specifically, the amorphous alloy layer may be formed on at least one surface of a dome-shaped stainless steel (STS). At this time, the amorphous alloy layer may have a thickness of 0.1 占 퐉 or more and 5 占 퐉 or less.

On the other hand, the amorphous alloy layer may include a nanocrystalline layer. At this time, the amorphous alloy layer may have a grain size of 1 nm or less, and the nanocrystalline layer may have a grain size of 1 nm or more and 100 nm or less. At this time, the amorphous alloy layer and the nanocrystalline layer can form a uniform film even when a thin layer of several tens of nanometers is deposited, and can exhibit high elasticity and strength and strong corrosion resistance. Therefore, it is possible to realize a sufficient lifetime and click feeling even with a small size dome switch, and the reliability of the dome switch can be improved by increasing the fatigue life. Further, when the dome shape having the same size is produced by the wide elastic deformation range of the amorphous alloy layer, deformation in the higher longitudinal direction is possible. Meanwhile, various configurations of the dome switch including the dome-shaped crystalline metal and the amorphous alloy layer will be described in detail with reference to FIG. 18 to FIG.

At this time, the lowermost surface of the dome switch 1610 in contact with the contact point 1640 of the circuit board 1620 may be formed of at least one of gold, silver, copper and aluminum having good conductivity.

The circuit board 1620 can attach electric components and connect them to each other to form a circuit. At this time, the circuit board 1620 can be provided with a dome switch 1610 on a plurality of contacts. Specifically, on the circuit board 1620, there may be a plurality of contacts 1631 and 1632 that are in contact with the circuit board 1620 and the dome switch 1610. On the other hand, on the circuit board 1620, there may be contacts 1640 which are spaced apart from the plurality of contacts 1631 and 1632, respectively, and which are open without being in contact with the dome switch. At this time, the plurality of contacts 1631 and 1632, which are in contact with the circuit board 1620 and the dome switch 1610, and the open contact 1640 that is not in contact with the dome switch, can be electrically contradictory. Specifically, the plurality of contacts 1631 and 1632, which are in contact with the circuit board 1620 and the dome switch 1610, may be the anode, and the contact 1640, which is open without contacting the dome switch, may be the cathode.

In FIG. 16, the dome switch 1610 and the circuit board 1620 are shown as having two contacts. However, in the embodiment, the contact may be a ring-shaped contact in the form of a dome switch 1620.

On the other hand, the plurality of contacts 1631 and 1632, which are in contact with the circuit board 1620 and the dome switch 1610, are limited to the anode and the contact 1640, which is opened without contacting the dome switch, But can be implemented in the opposite case in implementation.

17 is a flowchart illustrating a method of manufacturing a dome switch according to an embodiment of the present invention.

Referring to FIG. 17, a metal layer is first prepared (S1710). At this time, the metal layer may be in the form of a dome. Specifically, the metal layer has a dome shape protruding from the center. When the center of the protruded metal plate receives a force of a certain magnitude or more, the protruded center can be electrically connected to the circuit board in contact with the circuit board. At this time, the metal layer may be a crystalline metal alloy. Specifically, the metal layer may be STS.

Next, an amorphous alloy layer is formed on the prepared metal layer (S1720). Specifically, an amorphous alloy layer may be formed on the metal layer using at least one of sputtering, spray coating, and cladding.

At this time, an amorphous alloy layer can be formed on the metal layer using a sputtering method. Although the sputtering method is used for depositing the amorphous alloy layer on the metal layer, at least one of the physical vapor deposition method and the chemical vapor deposition method other than the sputtering method can be used.

On the other hand, spray coating is a method in which high speed and temperature are added by using amorphous powder, and amorphous powder is plastically deformed in the base material.

On the other hand, cladding refers to a welding process in which another metal is bonded to one or both sides of a steel. Also called a clad sheet, it may be a layered composite alloy that is completely bonded by polymerizing other metals.

On the other hand, the amorphous alloy layer can be formed on the surface of the upper part of the metal layer at room temperature to 500 ° C or lower.

In the above description, the amorphous alloy layer is formed only on the upper portion of the metal layer. However, the amorphous alloy layer may be formed on the metal layer as well as on the metal layer. This makes it possible to manufacture a dome switch having a smaller size and higher reliability as compared with the case where the amorphous alloy layer is formed only on the metal layer.

On the other hand, although not shown, a metal thin film having good conductivity can be formed at the bottom of the manufactured dome switch. At this time, the metal thin film may be aluminum, copper, gold, silver or the like having high electric conductivity. Specifically, if an amorphous alloy layer is formed only on the metal layer, a metal thin film may be formed under the metal layer. On the other hand, if an amorphous alloy layer is formed under the metal layer, a metal thin film may be formed under the amorphous alloy layer. This increases the electrical conductivity of the surface of the dome switch in contact with the electrode on the circuit board, thereby improving the switch operation. On the other hand, a metal thin film may be formed on both surfaces of the metal layer for convenience of the process.

18 to 21 are views for explaining the configuration of a dome switch according to various embodiments of the present invention.

Referring to FIG. 18, a dome switch according to an embodiment of the present invention includes a metal layer 1810 and an amorphous alloy layer 1820. Specifically, the dome switch may include a metal layer 1810 and an amorphous alloy layer 1820 formed on the metal layer 1810. At this time, the metal layer 1810 may be STS.

19, a dome switch according to an embodiment of the present invention may include a metal layer 1810, an amorphous alloy layer 1920, and a second metal layer 1930 that is a different material from the metal layer 1910 have. Specifically, the dome switch may include an amorphous alloy layer 1920 formed on the upper surface of the metal layer 1910 and a second metal layer 1930 formed on the lower surface of the metal layer 1910. In this case, the metal layer 1910 may be at least one of STS and the second metal layer 1930 may be at least one of gold, silver, copper, and aluminum having good electrical conductivity.

Referring to FIG. 20, a dome switch according to an embodiment of the present invention may include a metal layer 2010, and a plurality of amorphous alloy layers 2020 and 2021. Specifically, the dome switch can include a metal layer 2010, a first amorphous alloy layer 2021 formed on the lower surface of the metal layer 2010, and a second amorphous alloy layer 2020 formed on the upper surface of the metal layer 2010 have. At this time, the metal layer 2010 may be STS. By forming a plurality of amorphous alloy layers 2020 and 2021 on both surfaces of the metal layer 2010, it is possible to manufacture a dome switch having better reliability and miniaturization, thereby being advantageous for space utilization of electronic equipment.

21, a dome switch according to an embodiment of the present invention includes a metal layer 2110, a plurality of amorphous alloy layers 2120 and 2121, and a metal layer 2130 that is a different material from the metal layer 2110 can do. Specifically, the dome switch includes a metal layer 2130, a first amorphous alloy layer 2121 formed on the upper portion of the metal layer 2130, a second amorphous alloy layer 2121 formed on the metal layer 2130, 1 third amorphous alloy layer 2120 formed on the third metal layer 2110 and the third metal layer 2110 formed on the upper portion of the first amorphous alloy layer 2121. [

At this time, the metal layer 2130 may be at least one of gold, silver, copper, and aluminum having good electrical conductivity, and the third metal layer 2110 may be STS. At this time, a dome switch having better reliability due to the first amorphous alloy layer 2121 and the second amorphous alloy layer 2120 formed on the upper and lower portions of the third metal layer 2110 and thus capable of miniaturization can be manufactured And can be advantageous for space utilization of electronic equipment. On the other hand, by forming at least one metal layer 2130 of gold, silver, copper and aluminum having good electrical conductivity at the bottom of the dome switch, the electrical conductivity of the surface of the dome switch in contact with the electrode on the circuit board is increased, The operation can be improved.

As described above, according to the various embodiments of the present invention, since the amorphous alloy layer is formed, dome switches can be provided in which the durability and click feeling are improved by using existing facilities as they are, .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the invention as defined by the appended claims. It should be understood that various modifications may be made without departing from the spirit and scope of the present invention.

Claims (30)

In the amorphous alloy patterning method,
Forming a pattern on the base material to define an amorphous alloy deposition area;
Forming an amorphous alloy deposition layer on the patterned base material; And
Etching the region other than the amorphous alloy deposition region. The method according to claim 1,
Wherein forming the amorphous alloy deposition layer comprises:
And a sputtering method is used for the amorphous alloy. The method according to claim 1,
Wherein forming the amorphous alloy deposition layer comprises:
Lt; RTI ID = 0.0 > 300 C < / RTI > The method according to claim 1,
Wherein forming the pattern comprises:
Attaching a patterned film to an upper surface of the base material in a region in which a region other than the amorphous alloy deposition region is exposed;
Forming a material layer that reacts with the acid on the exposed region of the film; And
And removing the film. ≪ RTI ID = 0.0 > 21. < / RTI > 5. The method of claim 4,
The film may be,
Wherein the amorphous alloy layer is made of at least one of a polymer and a ceramic. The method according to claim 1,
Wherein forming the pattern comprises:
Forming a protective film on an upper surface of the base material;
Forming a material layer that reacts with the acid on the upper surface of the protective film; And
And removing the protective layer and the material layer formed on the amorphous alloy deposition region. The method according to claim 6,
The forming of the passivation layer may include:
Wherein the protective film is formed by any one of coating, deposition, anodizing, and spin coating. The method according to claim 6,
The protective film may be formed,
Wherein the amorphous alloy is at least one of an oxide, a polymer, a ceramic, and a metal alloy. The method according to claim 6,
Wherein the removing comprises:
Wherein the protective film and the material layer are removed by any one of diamond cutting, grinding, and laser marking. The method according to claim 6,
Wherein the etching comprises:
Wherein the material layer and the amorphous alloy deposition layer formed in regions other than the amorphous alloy deposition region are etched. The method according to claim 1,
The base material,
Wherein the amorphous alloy is at least one of a metal, a ceramic, and a polymer. The method according to claim 1,
The amorphous alloy,
And at least one of iron (Fe), copper (Cu), zirconium (Zr), titanium (Ti), hafnium (Hf), zinc (Zn), aluminum (Al) ≪ / RTI > The method according to claim 1,
The amorphous alloy deposition layer may be formed,
And an amorphous alloy composite obtained by reacting an amorphous alloy with nitrogen gas. 14. The method of claim 13,
In the amorphous alloy composite,
Wherein the crystalline phase contains not less than 10% and not more than 90%
Wherein the size of the crystalline phase of the crystalline phase is 5 nm or more and 1000 nm or less. The method according to claim 1,
Wherein the amorphous alloy deposition layer has a thickness of 5 nm or more and 10 占 퐉 or less. The method according to claim 1,
Wherein the etching comprises:
Wherein at least one of nitric acid, sulfuric acid, and hydrofluoric acid is used. 5. The method of claim 4,
Wherein the material layer comprises:
Copper and silicon oxide. ≪ RTI ID = 0.0 > 21. < / RTI > The method according to claim 1,
And washing the surface of the base material before forming the pattern. 19. An amorphous alloy pattern structure made by the method of any one of claims 1 to 18. 20. The method of claim 19,
The amorphous alloy pattern structure may be formed,
Wherein the amorphous alloy pattern structure is a case shape of an electronic device. In the dome switch,
A metal layer having a dome shape protruding from the center and electrically connected to the circuit board when the center of the protrusion is exposed to an external force; And
And an amorphous alloy layer disposed over the metal layer. 22. The method of claim 21,
Wherein the thickness of the amorphous alloy layer is 0.1 占 퐉 or more and 5 占 퐉 or less. 22. The method of claim 21,
The metal layer may include,
A first metal layer disposed under the amorphous alloy layer; And
And a second metal layer disposed below the first metal layer and different from the first metal layer. 24. The method of claim 23,
Wherein the first metal layer is stainless steel,
Wherein the second metal layer comprises at least one of gold, silver, copper, and aluminum. 22. The method of claim 21,
And a third metal layer disposed over the amorphous alloy layer. 26. The method of claim 25,
Wherein the metal layer is at least one of gold, silver, copper, and aluminum,
And the third metal layer is STS. 26. The method of claim 25,
And a second amorphous alloy layer disposed over the third metal layer. A method of manufacturing a dome switch,
Preparing a metal layer having a central protruding dome shape and electrically connected to the circuit board when the center of the protrusion is exposed to an external force; And
And forming an amorphous alloy layer on the metal layer. 29. The method of claim 28,
Wherein forming the amorphous alloy layer comprises:
Wherein at least one of sputtering, spray coating, and cladding is used. 29. The method of claim 28,
Wherein forming the amorphous alloy layer comprises:
Lt; RTI ID = 0.0 > 500 C < / RTI >

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