TWI502098B - Hard film-coated member and method of producing the same - Google Patents

Hard film-coated member and method of producing the same Download PDF

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TWI502098B
TWI502098B TW101121854A TW101121854A TWI502098B TW I502098 B TWI502098 B TW I502098B TW 101121854 A TW101121854 A TW 101121854A TW 101121854 A TW101121854 A TW 101121854A TW I502098 B TWI502098 B TW I502098B
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layer
hard film
electroless
sample
substrate
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TW101121854A
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TW201307611A (en
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Kunihiko Shibusawa
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Taiyo Yuden Chemical Technology Co Ltd
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/341Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one carbide layer
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/343Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
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    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54Contact plating, i.e. electroless electrochemical plating

Description

以硬質膜被覆之硬質膜被覆構件及其製造方法Hard film covering member coated with hard film and manufacturing method thereof

本發明係關於一種以硬質膜被覆之硬質膜被覆構件及其製造方法。The present invention relates to a hard film covering member coated with a hard film and a method for producing the same.

為了使包含軟質金屬之基材之耐磨耗性、耐候性、耐酸性、耐鹼性等提昇,已知有以非晶質碳膜等硬質膜來被覆基材表面之表面處理技術。然而,其被指出有如下問題:於基材包含鋁或鋁合金等軟質金屬之情形時,基材與硬質膜之硬度差較大,故而硬質膜容易自基材剝離。因此,較理想的是使硬質膜以良好的密接性形成於基材表面。In order to improve the abrasion resistance, weather resistance, acid resistance, alkali resistance, and the like of a substrate containing a soft metal, a surface treatment technique in which a surface of a substrate is coated with a hard film such as an amorphous carbon film is known. However, it has been pointed out that when the base material contains a soft metal such as aluminum or aluminum alloy, the hardness difference between the base material and the hard film is large, and thus the hard film is easily peeled off from the substrate. Therefore, it is desirable to form the hard film on the surface of the substrate with good adhesion.

作為意欲將硬質膜以良好的密接性形成於基材表面之專利申請之示例,有日本專利特開2004-346353號公報(專利文獻1)。於專利文獻1中,揭示有於鋁基材之表面經由無電解鍍Ni-P層而形成非晶質碳膜之成膜方法。於該專利文獻1之成膜方法中,藉由在非晶質碳膜之成膜時對無電解鍍Ni-P膜施加熱處理使無電解鍍Ni-P層結晶化,而使膜之硬度自基材朝向非晶質碳膜階段性地增大,藉此使非晶質碳膜與下層之密接性提昇。又,於日本專利特開平3-134184號公報(專利文獻2)中,亦揭示有藉由對形成於鋁基材與硬質膜之間之無電解鍍Ni-P層進行加熱使其硬化,而使硬度自基材側朝向表面階段性地增加,從而使硬質膜與下層之密接性提昇。An example of a patent application that is intended to form a hard film with a good adhesion to a surface of a substrate is disclosed in Japanese Laid-Open Patent Publication No. 2004-346353 (Patent Document 1). Patent Document 1 discloses a film forming method in which an amorphous carbon film is formed on a surface of an aluminum substrate via electroless Ni-P plating. In the film formation method of Patent Document 1, the electroless Ni-P layer is crystallized by applying heat treatment to the electroless Ni-P film at the time of film formation of the amorphous carbon film, and the hardness of the film is self-induced. The base material is gradually increased toward the amorphous carbon film, whereby the adhesion between the amorphous carbon film and the lower layer is improved. Further, in Japanese Laid-Open Patent Publication No. Hei-3-134184 (Patent Document 2), it is also disclosed that the electroless Ni-P layer formed between the aluminum substrate and the hard film is heated and hardened. The hardness is gradually increased from the substrate side toward the surface, so that the adhesion between the hard film and the lower layer is improved.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本專利特開2004-346353號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-346353

[專利文獻2]日本專利特開平3-134184號公報[Patent Document 2] Japanese Patent Laid-Open No. Hei 3-134184

根據本發明者之驗證,以硬質膜被覆有軟質金屬之先前之硬質膜被覆構件中的硬質膜與下層之密接性並不充分。因此,本發明之目的在於提供一種於包含軟質金屬之基材上較先前以更佳的密接性而被覆有非晶質碳膜等硬質膜之硬質膜被覆構件。According to the verification by the present inventors, the adhesion between the hard film and the lower layer in the prior hard film covering member in which the hard film is coated with the soft metal is not sufficient. Accordingly, an object of the present invention is to provide a hard film coating member in which a hard film such as an amorphous carbon film is coated on a substrate containing a soft metal more preferably with better adhesion.

本發明之一實施形態之硬質膜被覆構件包括:基材,其包含軟質金屬;非晶狀之無電解鍍鎳層,其形成於上述基材上;及硬質膜,其形成於上述無電解鍍鎳層上。具有無電解鍍鎳層之先前之硬質膜被覆構件係藉由加熱處理使無電解鍍鎳層結晶化,但於本發明之一實施形態中,係將硬質膜被覆構件之製造步驟中之對無電解鍍鎳層之加熱抑制為未達260℃,使得於硬質膜被覆構件之完成體中無電解鍍鎳層具有非晶構造。A hard film covering member according to an embodiment of the present invention includes: a base material comprising a soft metal; an amorphous electroless nickel plating layer formed on the base material; and a hard film formed on the electroless plating described above On the nickel layer. In the prior hard film coating member having the electroless nickel plating layer, the electroless nickel plating layer is crystallized by heat treatment. However, in one embodiment of the present invention, the hard film coating member is in the manufacturing step. The heating inhibition of the electrolytic nickel plating layer is less than 260 ° C, so that the electroless nickel plating layer in the finished body of the hard film coating member has an amorphous structure.

藉由本發明之各種實施態樣,可提供一種於包含軟質金屬之基材上較先前以更佳的密接性而被覆有非晶質碳膜等硬質膜之硬質膜被覆構件。According to various embodiments of the present invention, it is possible to provide a hard film covering member in which a hard film such as an amorphous carbon film is coated on a substrate containing a soft metal more preferably with better adhesion.

圖1係示意性地表示本發明之一實施形態之硬質膜被覆構件1之剖面之示意圖。如圖所示,硬質膜被覆構件1包括基材10、形成於基材10之一表面上之鋅取代層20、形成於鋅取代層20之與基材10相反之側之表面上的非晶狀之無電解鍍鎳層30、及形成於無電解鍍鎳層30之與鋅取代層20相反之側之表面上的硬質膜40。以此方式,本發明之一實施形態之硬質膜被覆構件1係由基材10、鋅取代層20、無電解鍍鎳層30、及硬質膜40依序積層而構成。Fig. 1 is a schematic view showing a cross section of a hard film covering member 1 according to an embodiment of the present invention. As shown in the figure, the hard film covering member 1 includes a substrate 10, a zinc substitution layer 20 formed on one surface of the substrate 10, and an amorphous layer formed on the surface of the zinc substitution layer 20 opposite to the substrate 10. The electroless nickel plating layer 30 and the hard film 40 formed on the surface of the electroless nickel plating layer 30 opposite to the zinc substitution layer 20 are formed. In this manner, the hard film covering member 1 according to the embodiment of the present invention is configured by sequentially laminating the substrate 10, the zinc substitution layer 20, the electroless nickel plating layer 30, and the hard film 40.

基材10包含鋁、鎂、或其等之合金等軟質金屬等各種素材。作為本發明之一實施形態之基材10之材料而使用之鋁合金中,包括例如屬於AC系列、ADC系列、及AJ系列之各種鋁合金。於使用鋁作為基材10之素材之情形時,基材10之硬度若以維氏硬度表示則約為50~200 Hv,其熱線膨脹係數大約為23×10-6 /℃。其中,熱線膨脹係數之值係根據基材存在之溫度而變化。於本發明之一態樣中,利用噴砂處理或搪磨(honing)處理、使用有藥液之化學蝕刻等使基材10之表面變得粗糙,藉此可令基材10與鋅取代層20、或其他代替鋅取代層20而用以使無電解鍍鎳層30與基材10密接之層的密接性提昇。The substrate 10 contains various materials such as soft metals such as aluminum, magnesium, or the like. The aluminum alloy used as the material of the substrate 10 according to an embodiment of the present invention includes, for example, various aluminum alloys belonging to the AC series, the ADC series, and the AJ series. In the case where aluminum is used as the material of the substrate 10, the hardness of the substrate 10 is about 50 to 200 Hv as expressed by Vickers hardness, and the coefficient of thermal linear expansion is about 23 × 10 -6 /°C. Here, the value of the coefficient of thermal linear expansion varies depending on the temperature at which the substrate exists. In one aspect of the present invention, the surface of the substrate 10 is roughened by sand blasting or honing treatment, chemical etching using a chemical liquid, or the like, whereby the substrate 10 and the zinc substitution layer 20 can be made. Or, in place of the zinc substitution layer 20, the adhesion of the layer in which the electroless nickel plating layer 30 is in close contact with the substrate 10 is improved.

鋅取代層20作為底塗層而成膜於基材10之一表面上。鋅取代層20係用以使無電解鍍鎳層30與基材10密接而設置者,可以公知之任意方法成膜。成膜方法之一例將於下文敍述。鋅取代層20之厚度相比於其他層(基材10、無電解鍍鎳層30、硬質膜40)非常地薄,例如,約為50~200 nm。 當於基材10之表面形成陽極氧化皮膜而確保基材10與上層之絕緣之情形時,鋅取代層20形成於該陽極氧化皮膜之上。鋅取代層20之熱線膨脹係數約為26×10-6 /℃。The zinc substitution layer 20 is formed as an undercoat layer on one surface of the substrate 10. The zinc substitution layer 20 is provided to allow the electroless nickel plating layer 30 to be in close contact with the substrate 10, and can be formed by any known method. An example of a film formation method will be described below. The thickness of the zinc-substituted layer 20 is very thin compared to the other layers (the substrate 10, the electroless nickel plating layer 30, and the hard film 40), for example, about 50 to 200 nm. When an anodized film is formed on the surface of the substrate 10 to ensure insulation of the substrate 10 from the upper layer, a zinc substitution layer 20 is formed on the anodized film. The coefficient of thermal linear expansion of the zinc-substituted layer 20 is about 26 x 10 -6 /°C.

於本發明之另一實施形態中,為了使無電解鍍鎳層30與基材10密接,亦可對基材10之表面賦予Pd等觸媒,來取代鋅取代層20。又,於基材10之表面,可設置以各種濺鍍法或蒸鍍法等乾式鍍敷法形成之金屬薄膜、或各種濕式鍍敷皮膜等各種密接層,來取代鋅取代層20。該等密接層既可為單一之層,亦可為複數層積層而成者。例如,於基材10包含鋁或鋁合金之情形時,亦可於基材10之表層形成陽極氧化皮膜,其後形成鋅取代層20,藉此將該陽極氧化皮膜用作可賦予絕緣性之底塗層。又,亦可取代鋅取代層20,而將無電解鍍Cu或電解鍍Cu用作底塗層。無電解鍍Cu或電解鍍Cu亦可形成於經過粗面化處理之基材10上。又,為了形成無電解鍍Cu,亦可對基材10之表面賦予Pd等觸媒。In another embodiment of the present invention, in order to make the electroless nickel plating layer 30 adhere to the substrate 10, a catalyst such as Pd may be added to the surface of the substrate 10 instead of the zinc substitution layer 20. Further, on the surface of the substrate 10, various adhesion layers such as a metal thin film formed by a dry plating method such as a sputtering method or a vapor deposition method, or various wet plating films may be provided instead of the zinc substitution layer 20. The adhesion layer may be a single layer or a plurality of layers. For example, when the substrate 10 contains aluminum or an aluminum alloy, an anodized film may be formed on the surface layer of the substrate 10, and thereafter a zinc substitution layer 20 is formed, whereby the anodized film is used as an insulating layer. Undercoat. Further, instead of the zinc substitution layer 20, electroless Cu plating or electrolytic plating Cu may be used as the undercoat layer. Electroless Cu plating or electrolytic Cu plating may also be formed on the roughened substrate 10. Further, in order to form electroless Cu plating, a catalyst such as Pd may be applied to the surface of the substrate 10.

本發明之一實施形態之無電解鍍鎳層30係藉由無電解鍍敷法而成膜於鋅取代層20之表面。於本發明之一實施形態中,無電解鍍鎳層30於硬質膜被覆構件1之完成體中具有非晶構造。本發明之一實施形態之無電解鍍鎳層30包含例如無電解鍍Ni-P或無電解鍍Ni-B。於本發明之一實施形態中,亦可將無電解鍍Ni-B層形成於無電解鍍Ni-P層之表面,而使無電解鍍鎳層30構成為包含無電解鍍Ni-P層與無電解鍍Ni-B層之2層構造。又,於無電解鍍鎳層30之表面,亦可形成電解鍍鎳層。因無電解鍍鎳層30為非晶狀故 而無電解鍍鎳層30之硬度約為500~600 Hv,熱線膨脹係數大約為13×10-6 /℃。無電解鍍鎳層30可根據基材10之用途、用法而形成為各種厚度。無電解鍍鎳層30通常形成為0.1~40 μm之厚度。又,無電解鍍鎳層30於硬質膜被覆構件1中為非晶狀,故而膜中不存在結晶構造之缺陷。其結果,可對基材10賦予優異之耐候性。於下述硬質膜40上,多數情況下形成由於電漿製程中之電弧作用、異物之附著等而產生之針孔,存在酸或鹼由該針孔浸透至基材10而使基材10腐蝕之情況。本發明之一實施形態之硬質膜被覆構件1中,於基材10與硬質膜40之間設置有非晶狀之無電解鍍鎳層30,故而即便為於硬質膜40上形成有針孔之情形時亦可防止酸或鹼向基材10之侵入,從而可抑制硬質膜40之剝離。The electroless nickel plating layer 30 according to an embodiment of the present invention is formed on the surface of the zinc substitution layer 20 by electroless plating. In one embodiment of the present invention, the electroless nickel plating layer 30 has an amorphous structure in the completed body of the hard film covering member 1. The electroless nickel plating layer 30 according to an embodiment of the present invention includes, for example, electroless Ni-P plating or electroless Ni-B plating. In an embodiment of the present invention, the electroless Ni-B layer may be formed on the surface of the electroless Ni-P layer, and the electroless nickel plating layer 30 may be formed to include an electroless Ni-P layer. A two-layer structure of electroless Ni-B plating. Further, an electrolytic nickel plating layer may be formed on the surface of the electroless nickel plating layer 30. Since the electroless nickel plating layer 30 is amorphous, the electroless nickel plating layer 30 has a hardness of about 500 to 600 Hv and a coefficient of thermal linear expansion of about 13 × 10 -6 /°C. The electroless nickel plating layer 30 can be formed into various thicknesses depending on the use and usage of the substrate 10. The electroless nickel plating layer 30 is usually formed to a thickness of 0.1 to 40 μm. Further, since the electroless nickel plating layer 30 is amorphous in the hard film covering member 1, there is no defect in the crystal structure in the film. As a result, excellent weather resistance can be imparted to the substrate 10. On the hard film 40 described below, pinholes due to arcing in the plasma process, adhesion of foreign matter, and the like are formed in many cases, and the acid or alkali is impregnated into the substrate 10 by the pinhole to corrode the substrate 10. The situation. In the hard film covering member 1 according to the embodiment of the present invention, the amorphous electroless nickel plating layer 30 is provided between the substrate 10 and the hard film 40, so that pinholes are formed on the hard film 40. In this case, the intrusion of an acid or a base into the substrate 10 can be prevented, and the peeling of the hard film 40 can be suppressed.

無電解鍍Ni-P層若超過約260℃則會自非晶構造向結晶構造過渡,引起延展性之顯著降低與硬度之提高(參照電氣鍍金研究會編,「無電解鍍敷-基礎與應用」,日刊工業報社,1994年5月30日,p.37)。若無電解鍍Ni-P層中之磷(P)之比率較低,則有無電解鍍Ni-P層並非以非晶構造而是作為結晶構造析出之情況,故而於一實施態樣中,可將無電解鍍Ni-P層中之P之比率設定為8 wt%以上。於本發明之一實施形態中,藉由使無電解鍍Ni-P層之成膜處理、及無電解鍍Ni-P層成膜後之處理(電解鎳層或硬質膜40之成膜等)均於約未達260℃下進行,而防止以非晶構造析出之無電解鍍Ni-P層結晶化。If the electroless Ni-P layer exceeds about 260 ° C, it will transition from an amorphous structure to a crystalline structure, causing a significant decrease in ductility and an increase in hardness (refer to the Electroplating Research Society, "Electroless Plating - Basics and Applications , Nikkan Kogyo Shimbun, May 30, 1994, p. 37). When the ratio of phosphorus (P) in the electroless Ni-P layer is low, the presence or absence of the electroless Ni-P layer is not deposited as an amorphous structure but as a crystal structure, and thus, in one embodiment, The ratio of P in the electroless plated Ni-P layer was set to 8 wt% or more. In one embodiment of the present invention, the film formation treatment of the electroless Ni-P layer and the treatment after the electroless Ni-P layer is formed (the formation of the electrolytic nickel layer or the hard film 40) Both were carried out at about 260 ° C to prevent crystallization of the electroless Ni-P layer deposited in an amorphous structure.

又,作為本發明之一實施形態,無電解鍍鎳層30未被加熱至高溫,故而無電解鍍鎳層30於成膜在硬質膜被覆構件1上之狀態下(作為已完成之硬質膜被覆構件1之構成層)成為非磁性體。尤其是,當於約未達260℃下進行無電解鍍Ni-P層成膜後之處理之情形時,對無電解鍍鎳層30中所含有之P之濃度進行調整以使其成為大約11 wt%有餘~12 wt%以上,藉此可使無電解鍍鎳層30於成膜在硬質膜被覆構件1上之狀態下為非磁性。又,當於約未達200℃下進行無電解鍍Ni-P層成膜後之處理之情形時,對無電解鍍鎳層30中所含有之P之濃度進行調整以使其成為大約10 wt%以上,藉此可使無電解鍍鎳層30於成膜在硬質膜被覆構件1上之狀態下為非磁性。以此方式,使無電解鍍鎳層30成為非磁性體,藉此可防止硬質膜被覆構件1磁化。又,即便於使用藉由磁控(磁場)來控制電漿或電子線之硬質膜成膜裝置形成硬質膜40之情形時,無電解鍍鎳層30亦不會磁化,故而可均質地形成硬質膜40。又,於將本發明之一實施形態之硬質膜被覆構件1使用在採用永久磁鐵或電磁鐵等之磁選機、使用磁力來搬送零件之零件搬送用給料機、靜電夾頭機構、或磁鐵夾頭機構等零件處理裝置等中之情形時,可防止搬送工件或金屬垃圾黏附於給料機上,又,可防止搬送電子零件或機器上發生由磁鐵造成之不良狀況。Further, as an embodiment of the present invention, the electroless nickel plating layer 30 is not heated to a high temperature, so that the electroless nickel plating layer 30 is formed on the hard film covering member 1 (as a completed hard film coating). The constituent layer of the member 1 is a non-magnetic body. In particular, when the treatment of the electroless Ni-P layer is performed at about 260 ° C, the concentration of P contained in the electroless nickel plating layer 30 is adjusted so as to be about 11 When the wt% is more than 12% by weight, the electroless nickel plating layer 30 can be made non-magnetic in a state in which the film is formed on the hard film covering member 1. Further, when the treatment of the electroless Ni-P layer is performed at about 200 ° C, the concentration of P contained in the electroless nickel plating layer 30 is adjusted so as to be about 10 wt. In the above, the electroless nickel plating layer 30 can be made non-magnetic in a state in which the film is formed on the hard film covering member 1. In this way, the electroless nickel plating layer 30 is made non-magnetic, whereby the hard film covering member 1 can be prevented from being magnetized. Further, even in the case where the hard film 40 is formed by a hard film forming apparatus that controls a plasma or an electron beam by a magnetron (magnetic field), the electroless nickel plating layer 30 is not magnetized, so that it can be homogeneously formed into a hard material. Film 40. In addition, the hard film covering member 1 according to the embodiment of the present invention is used in a magnetic separator that uses a permanent magnet or an electromagnet, a component transfer feeder that uses a magnetic force to transport a component, an electrostatic chuck mechanism, or a magnet chuck. In the case of a part processing device such as a mechanism, it is possible to prevent the conveyance of the workpiece or the metal garbage from adhering to the feeder, and it is possible to prevent the occurrence of a problem caused by the magnet on the electronic component or the machine.

無電解鍍Ni-B層若超過約300℃則會自非晶狀構造向結晶構造過渡,與無電解鍍Ni-P層同樣地引起延展性之顯著降低與硬度之提高。若無電解鍍Ni-B層中之硼(B)之比率 較低,則有無電解鍍Ni-B層並非以非晶構造而是作為結晶構造析出之情況,故而於一實施態樣中,將無電解鍍Ni-B層中之B之比率設定為3 wt%以上。於本發明之一實施形態中,藉由使無電解鍍Ni-B層之成膜、及無電解鍍Ni-B層成膜後之處理(電解鎳層或硬質膜40之成膜等)均於約未達300℃下進行,而防止以非晶構造析出之無電解鍍Ni-B層結晶化。When the electroless plating Ni-B layer exceeds about 300 ° C, the transition from the amorphous structure to the crystalline structure causes a significant decrease in ductility and an increase in hardness similarly to the electroless Ni-P plating. Ratio of boron (B) in the electroless Ni-B layer In the case where the electroless plating Ni-B layer is not deposited as an amorphous structure but as a crystal structure, in one embodiment, the ratio of B in the electroless Ni-B layer is set to 3 wt. %the above. In one embodiment of the present invention, the film formation by the electroless plating of the Ni-B layer and the treatment after the electroless plating of the Ni-B layer are formed (the formation of the electrolytic nickel layer or the hard film 40, etc.) It is carried out at about 300 ° C to prevent crystallization of the electroless Ni-B layer deposited in an amorphous structure.

於一實施形態中,硬質膜40包含類鑽碳(DLC,Diamond-Like Carbon)等非晶質碳膜、含有Si之DLC等含有各種金屬元素之非晶質碳膜、TiAlN、AlN、TiCN、TiC、TiN、CrC、CrN、SiC或SiOX等硬質膜。該等硬質膜例如係藉由PVD(Physical Vapor Deposition,物理氣相沈積)法或CVD(Chemical Vapor Deposition,化學氣相沈積)法,而成膜於無電解鍍鎳層30表面。包含該等材料之硬質膜40之硬度大約為1000~4000 Hv。硬質皮膜之熱線膨脹係數雖有多種,但相比於軟質基材之鋁(23×10-6 /℃)或鎂(25×10-6 /℃),多為表示明顯較小之值者,例如於DLC膜等非晶質碳膜中大約為2×10-6 /℃前後,於碳化矽(SiC)中大約為6.6×10-6 /℃。硬質膜40可根據基材之用途而形成為各種厚度,於一態樣中形成為10 nm~10 μm,於另一態樣中形成為0.1 μm~3 μm。In one embodiment, the hard film 40 includes an amorphous carbon film such as diamond-like carbon (DLC, Diamond-Like Carbon), an amorphous carbon film containing various metal elements such as DLC containing Si, TiAlN, AlN, and TiCN. Hard film such as TiC, TiN, CrC, CrN, SiC or SiOX. These hard films are formed on the surface of the electroless nickel plating layer 30 by, for example, PVD (Physical Vapor Deposition) or CVD (Chemical Vapor Deposition). The hardness of the hard film 40 containing these materials is approximately 1000 to 4000 Hv. Although the thermal expansion coefficient of the hard film is various, it is much smaller than the aluminum (23×10 -6 /°C) or magnesium (25×10 -6 /°C) of the soft substrate. For example, in an amorphous carbon film such as a DLC film, it is about 2 × 10 -6 / ° C before and after, and is about 6.6 × 10 -6 / ° C in lanthanum carbide (SiC). The hard film 40 can be formed into various thicknesses depending on the use of the substrate, and is formed to be 10 nm to 10 μm in one aspect and 0.1 μm to 3 μm in the other aspect.

又,為了使無電解鍍鎳層30與硬質膜40之密接性進一步提昇,可於無電解鍍鎳層30與硬質膜40之間形成各種中間層(未圖示)。該中間層係以無電解鍍鎳層30不達到特定溫 度(例如260℃)以上之方式形成。較理想的是該中間層與無電解鍍鎳層30及硬質膜40兩者密接性良好,且其熱線膨脹係數具有處於無電解鍍鎳層30之熱線膨脹係數與硬質膜40之熱線膨脹係數之中間的值(大約為7×10-6 /℃)。此種中間層之例係例如為鉻層。鉻層係藉由電解鍍敷法、PVD法、或濺鍍法等公知之方法而形成。例如,藉由電解鍍敷法形成之硬質鍍鉻皮膜之硬度若以維氏硬度表示則為Hv 1000以上,但已300℃以上之熱處理實施的硬質鍍鉻皮膜之硬度減少至Hv 800左右。於本發明之一實施形態中,構成硬質膜被覆構件1之一部分之硬質鍍鉻層未被加熱超過300℃,從而可將其較高之硬度作為硬質膜被覆構件1之硬度傾斜構造之一部分而活用。Further, in order to further improve the adhesion between the electroless nickel plating layer 30 and the hard film 40, various intermediate layers (not shown) may be formed between the electroless nickel plating layer 30 and the hard film 40. The intermediate layer is formed such that the electroless nickel plating layer 30 does not reach a specific temperature (for example, 260 ° C) or more. It is preferable that the intermediate layer has good adhesion to both the electroless nickel plating layer 30 and the hard film 40, and the coefficient of thermal linear expansion has a coefficient of thermal linear expansion of the electroless nickel plating layer 30 and a coefficient of thermal linear expansion of the hard film 40. an intermediate value (about 7 × 10 -6 / ℃). An example of such an intermediate layer is, for example, a chromium layer. The chromium layer is formed by a known method such as electrolytic plating, PVD, or sputtering. For example, the hardness of the hard chrome plating film formed by the electrolytic plating method is Hv 1000 or more in terms of Vickers hardness, but the hardness of the hard chrome plating film which has been subjected to heat treatment at 300 ° C or higher is reduced to about Hv 800. In one embodiment of the present invention, the hard chromium plating layer constituting one portion of the hard film covering member 1 is not heated to more than 300 ° C, and the higher hardness can be utilized as a part of the hardness inclined structure of the hard film covering member 1 . .

無電解鍍鎳層之氫脆之去除一般係藉由150℃以上之熱處理(烘焙處理)而進行。因此,於本發明之一實施形態中,可於150℃~未達260℃之溫度或150℃~未達300℃之溫度下形成硬質膜40。藉由在該溫度範圍內形成硬質膜40,可抑制無電解鍍鎳層30之結晶構造化,並且可抑制無電解鍍鎳層30之氫脆。The removal of hydrogen embrittlement of the electroless nickel plating layer is generally carried out by heat treatment (baking treatment) at 150 ° C or higher. Therefore, in one embodiment of the present invention, the hard film 40 can be formed at a temperature of from 150 ° C to less than 260 ° C or from 150 ° C to less than 300 ° C. By forming the hard film 40 in this temperature range, the crystal structure of the electroless nickel plating layer 30 can be suppressed, and hydrogen embrittlement of the electroless nickel plating layer 30 can be suppressed.

以上述方式構成之硬質膜被覆構件1中,於包含基材10及鋅取代層20之下層部分與硬質膜40之間具有非晶構造之無電解鍍鎳層30,故而可使對硬質膜40所施加之應力藉由無電解鍍鎳層30緩和後傳遞至基材10。藉此,可使對包含軟質金屬等之基材10所施加之應力減少,從而抑制基材10之變形。其結果,可抑制由於基材10之變形而引起硬質膜 40自基材10剝離之情況。從而,於本發明之實施形態之硬質膜被覆構件1中,於構件表面形成硬化膜,另一方面,構件內部維持柔軟之構造,故而與「滲碳」同樣地,兼具耐磨耗性與高韌性。In the hard film covering member 1 configured as described above, the electroless nickel plating layer 30 having an amorphous structure between the lower layer portion including the base material 10 and the zinc substitution layer 20 and the hard film 40 can be used for the hard film 40. The applied stress is relieved by the electroless nickel plating layer 30 and transferred to the substrate 10. Thereby, the stress applied to the substrate 10 containing a soft metal or the like can be reduced, and the deformation of the substrate 10 can be suppressed. As a result, it is possible to suppress the hard film caused by the deformation of the substrate 10. 40 is peeled off from the substrate 10. Therefore, in the hard film covering member 1 according to the embodiment of the present invention, the cured film is formed on the surface of the member, and the inside of the member is maintained in a soft structure. Therefore, the wear resistance is the same as that of "carburizing". High toughness.

又,本發明之一實施態樣中,於硬質膜被覆構件1之製造步驟中,不進行約300℃以上之加熱,故而可抑制基材10成為高溫。藉此,可抑制基材10之機械特性之劣化、氧化、變色、及/或因加熱而造成之應力變形等。例如,於基材10包含鋁或鋁合金之情形時,鋁及鋁合金之再結晶溫度存在於約200℃~260℃左右,故而藉由於約未達200℃下製作硬質膜被覆構件1,可防止因基材10之再結晶化而造成之變形。Further, in an embodiment of the present invention, in the manufacturing step of the hard film covering member 1, heating of about 300 ° C or higher is not performed, so that the substrate 10 can be prevented from becoming high in temperature. Thereby, deterioration of the mechanical properties of the substrate 10, oxidation, discoloration, and/or stress deformation due to heating can be suppressed. For example, when the substrate 10 contains aluminum or an aluminum alloy, the recrystallization temperature of the aluminum and the aluminum alloy is present at about 200 ° C to 260 ° C, so that the hard film covering member 1 can be produced at about 200 ° C. The deformation due to recrystallization of the substrate 10 is prevented.

又,於硬質膜被覆構件1中,自基材10側朝向硬質膜40側,硬度階段性地增加(鋁合金基材10:約50~200 Hv,無電解鍍鎳層30:500~600 Hv,硬質膜40:1000~4000 Hv),並且熱線膨脹係數階段性地減少(鋁合金基材10:23×10-6 /℃,無電解鍍鎳層30:13×10-6 /℃,硬質膜40例如為非晶質碳膜之情形時:2×10-6 /℃),故而硬度及熱線膨脹係數於層間之變化變得平緩,可抑制鄰接之層彼此之剝離。從而,本發明之一實施形態之硬質膜被覆構件1藉由非晶構造之無電解鍍鎳層30而抑制基材10之變形,並且層間之硬度及熱線膨脹係數平緩,故而可於基材10上以良好的密接性而形成硬質膜40。尤其是,藉由將無電解鍍鎳層30形成為非晶構造,使得與專利文獻1或專利文獻2所代表 之先前之硬質膜被覆構件相比基材10與硬質膜40之密接性均有提昇。Further, in the hard film covering member 1, the hardness is gradually increased from the base material 10 side toward the hard film 40 side (aluminum alloy base material 10: about 50 to 200 Hv, and electroless nickel plating layer 30: 500 to 600 Hv) , hard film 40: 1000~4000 Hv), and the coefficient of thermal linear expansion is reduced stepwise (aluminum alloy substrate 10: 23 × 10 -6 / ° C, electroless nickel plating 30: 13 × 10 -6 / ° C, hard When the film 40 is, for example, an amorphous carbon film: 2 × 10 -6 /° C., the hardness and the coefficient of thermal expansion are gradually changed between the layers, and the peeling of the adjacent layers can be suppressed. Therefore, the hard film covering member 1 according to the embodiment of the present invention suppresses the deformation of the substrate 10 by the electroless nickel plating layer 30 of an amorphous structure, and the hardness and the coefficient of thermal linear expansion between the layers are gentle, so that the substrate 10 can be used. The hard film 40 is formed with good adhesion. In particular, by forming the electroless nickel plating layer 30 into an amorphous structure, the adhesion between the substrate 10 and the hard film 40 is higher than that of the prior hard film covering member represented by Patent Document 1 or Patent Document 2. Upgrade.

繼而,對本發明之一實施形態之硬質膜被覆構件1之形成方法進行說明。首先,於基材10之表面形成鋅取代層20。鋅取代層20可使用業者所熟知之公知之方法形成,例如,可藉由脫脂步驟、酸性蝕刻步驟、硝酸浸漬步驟、第一鋅取代步驟、硝酸鋅剝離步驟、及第二鋅取代步驟,而於基材10上成膜。於一態樣中,首先,將基材10浸漬於弱鹼溶液中進行脫脂,接著,浸漬於硫酸等酸溶液中進行蝕刻,之後進行硝酸浸漬處理。其次,將該經過硝酸浸漬處理之基材浸漬於以NaOH為主要成分之強鹼之鋅取代溶液中而使鋅取代層析出(第一鋅取代步驟)。接著,將該形成有鋅取代層之基材10浸漬於硝酸中除去污垢。然後,使浸漬於硝酸中之後之基材10再次浸漬於鋅取代溶液中而使鋅取代層析出(第二鋅取代步驟)。鋅取代層20於在基材10上形成有陽極氧化皮膜之情形時亦可以同樣之方法成膜。又,於上述硝酸浸漬步驟或鋅取代步驟中,亦可藉由調整基材10於硝酸或強鹼溶液中之浸漬時間,而使陽極氧化皮膜溶解,自基材10除去陽極氧化皮膜。例如,若陽極氧化皮膜之膜厚為10 μm,則藉由分別以約30秒鐘~1分鐘進行脫脂、蝕刻、酸浸、第一次鋅取代、酸浸、第2次鋅取代等各步驟,可使陽極氧化皮膜溶解。Next, a method of forming the hard film covering member 1 according to an embodiment of the present invention will be described. First, a zinc substitution layer 20 is formed on the surface of the substrate 10. The zinc substitution layer 20 can be formed by a well-known method well known to those skilled in the art, for example, by a degreasing step, an acidic etching step, a nitric acid impregnation step, a first zinc substitution step, a zinc nitrate stripping step, and a second zinc substitution step. A film is formed on the substrate 10. In one aspect, first, the substrate 10 is immersed in a weak alkali solution for degreasing, and then immersed in an acid solution such as sulfuric acid for etching, followed by nitric acid immersion treatment. Next, the substrate subjected to the nitric acid immersion treatment is immersed in a zinc substitution solution of a strong base containing NaOH as a main component to perform zinc substitution chromatography (first zinc substitution step). Next, the substrate 10 on which the zinc-substituted layer is formed is immersed in nitric acid to remove the scale. Then, the substrate 10 after being immersed in nitric acid is again immersed in a zinc substitution solution to be chromatographed by zinc substitution (second zinc substitution step). The zinc substitution layer 20 can also be formed into a film in the same manner as in the case where an anodized film is formed on the substrate 10. Further, in the nitric acid immersion step or the zinc substitution step, the anodic oxide film may be dissolved by adjusting the immersion time of the substrate 10 in a nitric acid or a strong alkali solution to remove the anodic oxide film from the substrate 10. For example, when the film thickness of the anodic oxide film is 10 μm, steps such as degreasing, etching, acid leaching, first zinc substitution, acid leaching, and second zinc substitution are performed for about 30 seconds to 1 minute, respectively. The anodic oxide film can be dissolved.

其次,於鋅取代層20之表面形成無電解鍍鎳層30。於藉由無電解鍍Ni-P法形成無電解鍍Ni-P層作為無電解鍍鎳層 30之情形時,將形成有鋅取代層20之基材10浸漬於放入有鎳離子與次磷酸離子之鍍敷液中,使鍍Ni-P形成於鋅取代層20之上。如業者所熟知,若鍍敷液中之鎳離子與作為還原劑之次磷酸離子接觸,則鋁基材成為觸媒而產生脫氫分解,藉由該脫氫分解所生成之氫原子吸附於鋅取代層20之上而活化。該經活化之氫原子與鍍敷液中之鎳離子接觸而將鎳還原為金屬,故而,鎳於鋅取代層20之表面析出。又,經活化之氫原子亦與鍍敷液中之次磷酸離子反應,將該離子中之磷還原,而將所還原之磷與鎳合金化。然後,該析出之鎳成為觸媒,上述之鎳之還原鍍敷反應繼續進行。即,藉由鎳之自我觸媒作用而使鍍敷繼續進行。藉由該自我觸媒作用,只要於鋁基材之鋅取代層表面存在可流通鍍敷液之空隙,便可於鋅取代層表面均一地形成鍍敷被膜。又,鍍敷被膜之厚度與鍍敷時間成正比,故而可通過鍍敷時間之控制來管理鍍敷被膜之厚度。又,無電解鍍Ni-B層係藉由使用含有鎳離子與作為還原劑之胺硼烷等硼系藥劑的無電解鍍敷液,以與無電解鍍Ni-P層同樣之方法形成。Next, an electroless nickel plating layer 30 is formed on the surface of the zinc substitution layer 20. Forming an electroless Ni-P layer by electroless Ni-P plating as an electroless nickel plating layer In the case of 30, the substrate 10 on which the zinc substitution layer 20 is formed is immersed in a plating solution in which nickel ions and hypophosphorous ions are placed, and Ni-P plating is formed on the zinc substitution layer 20. As is well known to the art, if the nickel ions in the plating solution come into contact with the hypophosphorous acid ions as the reducing agent, the aluminum substrate acts as a catalyst to cause dehydrogenation and decomposition, and the hydrogen atoms generated by the dehydrogenation decomposition are adsorbed to the zinc. Activated on top of the replacement layer 20. The activated hydrogen atoms are brought into contact with the nickel ions in the plating solution to reduce the nickel to a metal. Therefore, nickel is deposited on the surface of the zinc substitution layer 20. Further, the activated hydrogen atoms are also reacted with phosphoric acid ions in the plating solution to reduce the phosphorus in the ions, and the reduced phosphorus is alloyed with nickel. Then, the precipitated nickel becomes a catalyst, and the above-described nickel reduction plating reaction is continued. That is, the plating is continued by the self-catalytic action of nickel. By the action of the self-catalyst, a plating film can be uniformly formed on the surface of the zinc-substituted layer as long as the void of the plating solution can be distributed on the surface of the zinc-substituted layer of the aluminum substrate. Further, since the thickness of the plating film is proportional to the plating time, the thickness of the plating film can be managed by the control of the plating time. Further, the electroless plating Ni-B layer is formed by the same method as the electroless Ni-P plating layer by using an electroless plating solution containing a nickel-based ion and a boron-based agent such as an amine borane as a reducing agent.

硬質膜40係藉由電漿CVD法等CVD(化學蒸鍍)法或濺鍍法等物理蒸鍍(PVD)法等各種方法而形成。本發明之實施形態中所使用之電漿CVD法中包括高壓DC(Direct Current,直流)微脈衝電漿CDV法、高壓脈衝電漿CVD法、使用高頻放電之高頻電漿CVD法、利用直流放電之直流電漿CVD法、及利用微波放電之微波電漿CVD法。於直 流電漿CVD法中,因連續地進行通電,故較理想的是藉由冷卻裝置對基材進行溫度控制。電漿PVD法中包括各種濺鍍法及真空蒸鍍法。本發明之一態樣中,於硬質膜40之成膜步驟中,為了使無電解鍍鎳層30不達到特定溫度(例如260℃)以上,可適當地使成膜中之工件冷卻。例如,於本發明之一實施形態中,可進行如下操作:監視成膜過程中之工件之溫度,於達到特定溫度(例如260℃)之前,中斷電漿形成製程,使工件自然冷卻,於工件充分冷卻之後再次開始電漿形成製程。又,於本發明之另一實施形態中,使用可將工件冷卻之冷卻裝置,於電漿製程中,可使工件冷卻。於本發明之又一實施形態中,藉由調整電漿產生裝置之脈衝電源之占空比,可對工件之溫度進行調整以使其不會達到特定溫度(例如260℃)以上。例如,於使用高壓DC微脈衝電漿CVD法形成硬質膜40之情形時,可將電源之Duty比控制於2%~10%之範圍內,故而容易將成膜溫度控制為低溫。又,於低溫濺鍍裝置中,可於帶有冷媒之冷卻機構上設置工件,故而可將工件之無電解鍍鎳層30之部分保持為未達特定溫度(例如約260℃)而直接藉由PVD法成膜硬質膜40。The hard film 40 is formed by various methods such as a CVD (chemical vapor deposition) method such as a plasma CVD method or a physical vapor deposition (PVD) method such as a sputtering method. The plasma CVD method used in the embodiment of the present invention includes a high voltage DC (Direct Current) micropulse plasma CDV method, a high voltage pulse plasma CVD method, a high frequency plasma CVD method using high frequency discharge, and utilization. A direct current plasma CVD method for direct current discharge and a microwave plasma CVD method using microwave discharge. In straight In the flow plasma CVD method, since the current is continuously supplied, it is preferable to control the temperature of the substrate by the cooling device. The plasma PVD method includes various sputtering methods and vacuum evaporation methods. In one aspect of the present invention, in the film forming step of the hard film 40, in order to prevent the electroless nickel plating layer 30 from reaching a specific temperature (for example, 260 ° C) or more, the workpiece in the film formation can be appropriately cooled. For example, in an embodiment of the present invention, the following operations may be performed: monitoring the temperature of the workpiece during the film formation process, and interrupting the plasma forming process to achieve natural cooling of the workpiece before reaching a specific temperature (for example, 260 ° C). The plasma forming process is started again after the workpiece is sufficiently cooled. Further, in another embodiment of the present invention, a cooling device capable of cooling the workpiece is used, and the workpiece can be cooled in the plasma process. In still another embodiment of the present invention, by adjusting the duty ratio of the pulse power source of the plasma generating device, the temperature of the workpiece can be adjusted so as not to reach a specific temperature (for example, 260 ° C) or more. For example, when the hard film 40 is formed by the high-voltage DC micropulse plasma CVD method, the Duty ratio of the power source can be controlled within the range of 2% to 10%, so that the film formation temperature can be easily controlled to a low temperature. Moreover, in the low-temperature sputtering apparatus, the workpiece can be placed on the cooling mechanism with the refrigerant, so that the portion of the electroless nickel plating layer 30 of the workpiece can be kept at a specific temperature (for example, about 260 ° C) without being directly used. The hard film 40 is formed by the PVD method.

[實施例][Examples]

以下,對本發明之各種實施形態之硬質膜被覆構件1之實施例進行說明。以下之實施例僅為例示,本發明並不限定於以下所述之實施例。Hereinafter, an embodiment of the hard film covering member 1 according to various embodiments of the present invention will be described. The following examples are merely illustrative, and the invention is not limited to the examples described below.

基材之準備Preparation of the substrate

準備複數個5000系列之板狀鋁合金基材(5052材料)。作為該基材,係準備20 mm×100 mm且板厚為1 mm者。Prepare a plurality of 5000 series of plate-shaped aluminum alloy substrates (5052 material). As the substrate, a sheet of 20 mm × 100 mm and a sheet thickness of 1 mm was prepared.

鋅取代層之形成Formation of zinc substitution layer

其次,於該基材之表面藉由以下之方法形成鋅取代層。具體而言,首先,將基材浸漬於Meltex股份有限公司製造之鋁清潔劑NE-6溶液(濃度60 g/L)中於70℃下進行60秒鐘脫脂,將該脫脂後之基材利用自來水清洗30秒鐘。接著,將該水清洗後之基材浸漬於濃度100 ml/L之Akutan E-10與濃度10 g/L之Akutan 70之混合溶液中,於70℃下進行30秒鐘蝕刻。其次,對蝕刻後之基材進行2次每1次30秒鐘之利用自來水實施之水洗。然後,將其於常溫下在67%硝酸(500 ml/L)、98%硫酸(250 ml/L)、Akutan 70(120 g/L)之混合水溶液中進行酸浸10秒鐘,進行2次每1次30秒鐘之利用自來水實施之水洗。其次,使該清洗後之基材於25℃下浸漬在以濃度200 ml/L之Alumon EN為主要成分之鋅取代液中90秒鐘,使鋅取代層於基材表面析出。其後,進行2次每1次30秒鐘之藉由自來水實施之水洗。其次,將形成有鋅取代層之基材於常溫下浸漬在65%之硝酸中15秒鐘,除去污垢。接著,對已除去污垢之基材進行2次每1次30秒鐘之自來水清洗。然後,將清洗後之基材於25℃下浸漬在以濃度200 ml/L之Alumon EN為主要成分之鋅取代液中60秒鐘,進行第2次之鋅取代處理,之後利用自來水進行水洗。Next, a zinc substitution layer was formed on the surface of the substrate by the following method. Specifically, first, the substrate was immersed in an aluminum detergent NE-6 solution (concentration: 60 g/L) manufactured by Meltex Co., Ltd., and degreased at 70 ° C for 60 seconds to utilize the degreased substrate. Tap water for 30 seconds. Next, the substrate after the water washing was immersed in a mixed solution of Akutan E-10 having a concentration of 100 ml/L and Akutan 70 having a concentration of 10 g/L, and etching was performed at 70 ° C for 30 seconds. Next, the substrate after the etching was subjected to water washing with tap water twice every 30 seconds. Then, it was subjected to acid immersion in a mixed aqueous solution of 67% nitric acid (500 ml/L), 98% sulfuric acid (250 ml/L), and Akutan 70 (120 g/L) at room temperature for 10 seconds, and performed twice. Washing with tap water every 30 seconds. Next, the cleaned substrate was immersed in a zinc substitution liquid containing Alonon EN as a main component at a concentration of 200 ml/L at 25 ° C for 90 seconds to precipitate a zinc substitution layer on the surface of the substrate. Thereafter, water washing by tap water was performed twice every 30 seconds. Next, the substrate on which the zinc-substituted layer was formed was immersed in 65% nitric acid at normal temperature for 15 seconds to remove the scale. Next, the base material from which the dirt was removed was subjected to tap water washing for 30 times every time for 30 times. Then, the cleaned substrate was immersed in a zinc substitution liquid containing Alonon EN having a concentration of 200 ml/L as a main component at 25 ° C for 60 seconds, and subjected to a second zinc substitution treatment, followed by washing with tap water.

無電解鍍鎳層之形成Formation of electroless nickel plating

接著,使形成有鋅取代層之各基材於90℃下浸漬在55 ml/L之Melplate NI-2280LF Ml、100 ml/L之Melplate NI-2280LF M2及其他補充劑之混合液中,使磷濃度為12.8 wt%之無電解鍍鎳以厚度20 μm於鋅取代層之上析出。以此方式,準備複數個表面形成有無電解鍍鎳層之基材。Next, each substrate on which the zinc-substituted layer is formed is immersed in a mixture of 55 ml/L of Melplate NI-2280LF Ml, 100 ml/L of Melplate NI-2280LF M2 and other extenders at 90 ° C to make phosphorus Electroless nickel plating having a concentration of 12.8 wt% was precipitated on the zinc substitution layer with a thickness of 20 μm. In this way, a plurality of substrates having an electroless nickel plating layer formed thereon are prepared.

試料1(比較例)之製成Preparation of sample 1 (comparative example)

將形成有無電解鍍鎳層之1個基材於310℃下進行30分鐘加熱處理。其次,於該加熱處理後之基材之表面,藉由以下之方法形成160 nm含有矽之非晶質碳膜作為密接用中間層,於該中間層之上形成340 nm非晶質碳膜。具體而言,首先將加熱處理後之基材浸漬於異丙醇中,接著進行5分鐘超音波清洗。其後,將各基材設置於高壓DC脈衝電漿CVD裝置上,於以下之條件下形成非晶質碳膜。即,首先對高壓DC脈衝電漿CVD裝置進行真空排氣直至7×10-4 Pa為止,之後使用氣體流量30 SCCM、氣壓2 Pa之氬氣電漿,於施加電壓-5 kV、脈衝頻率10 kHz、脈衝寬度10 μs之條件下,對基材進行約5分鐘清洗。其次,於自該CVD裝置排出氬氣之後,將基材放置約10分鐘使其自然降溫。繼而,向CVD裝置內導入流量30 SCCM、氣壓2 Pa之四甲基矽烷,於施加電壓-4.5 Kv、脈衝頻率10 kHz、脈衝寬度10 μs之條件下成膜8分鐘,於無電解鍍鎳層上形成含有矽之密接用中間層。其次,於排出CVD裝置內之四甲基矽烷氣體之後,將基材放置20分鐘使其自然降溫。繼而,對於CVD裝置,將流量30 SCCM、氣壓2 Pa之乙炔導入至CVD 裝置內,於施加電壓-5 Kv、脈衝頻率10 kHz、脈衝寬度10 μs之條件下,以10分鐘形成非晶質碳膜。其次,將形成有非晶質碳膜之基材放置於CVD裝置內20分鐘使其自然降溫而冷卻。接著,再次將流量30 SCCM、氣壓2 Pa之乙炔導入至CVD裝置內,於施加電壓-5 Kv、脈衝頻率10 kHz、脈衝寬度10 μs之條件下,再次以10分鐘形成非晶質碳膜,而獲得試料1。One substrate on which an electroless nickel plating layer was formed was heat-treated at 310 ° C for 30 minutes. Next, on the surface of the heat-treated substrate, a 160 nm amorphous carbon film containing ruthenium was formed as an intermediate layer for adhesion, and a 340 nm amorphous carbon film was formed on the intermediate layer. Specifically, the substrate after the heat treatment was first immersed in isopropyl alcohol, followed by ultrasonic cleaning for 5 minutes. Thereafter, each of the substrates was placed on a high-voltage DC pulse plasma CVD apparatus to form an amorphous carbon film under the following conditions. That is, first, a high voltage DC pulse plasma CVD apparatus was evacuated up until 7 × 10 -4 Pa, then a gas flow 30 SCCM, gas pressure of 2 Pa argon plasma at an applied voltage -5 kV, a pulse frequency of 10 The substrate was washed for about 5 minutes at kHz and a pulse width of 10 μs. Next, after argon gas was discharged from the CVD apparatus, the substrate was allowed to stand for about 10 minutes to naturally cool it. Then, tetramethyl decane having a flow rate of 30 SCCM and a gas pressure of 2 Pa was introduced into the CVD apparatus, and film formation was carried out for 8 minutes under the conditions of an applied voltage of -4.5 Kv, a pulse frequency of 10 kHz, and a pulse width of 10 μs, in an electroless nickel plating layer. An intermediate layer for bonding with ruthenium is formed thereon. Next, after the tetramethyl decane gas in the CVD apparatus was discharged, the substrate was allowed to stand for 20 minutes to naturally cool it. Then, for the CVD apparatus, acetylene having a flow rate of 30 SCCM and a pressure of 2 Pa was introduced into the CVD apparatus, and amorphous carbon was formed in 10 minutes under the conditions of a voltage of -5 Kv, a pulse frequency of 10 kHz, and a pulse width of 10 μs. membrane. Next, the substrate on which the amorphous carbon film was formed was placed in a CVD apparatus for 20 minutes to be naturally cooled and cooled. Then, acetylene having a flow rate of 30 SCCM and a pressure of 2 Pa was introduced into the CVD apparatus again, and an amorphous carbon film was formed again for 10 minutes under the conditions of a voltage of -5 Kv, a pulse frequency of 10 kHz, and a pulse width of 10 μs. And sample 1 was obtained.

非晶質碳膜成膜中之基材上之無電解鍍鎳層之溫度之確認Confirmation of the temperature of the electroless nickel plating layer on the substrate in the film formation of amorphous carbon film

準備於形成有無電解鍍鎳層之基材上添附有以260℃作為變色溫度之溫度標籤者。於該基材上,藉由與試料1同樣之步驟(不進行310℃下之加熱),形成160 nm含有矽之非晶質碳膜作為密接用中間層,於該中間層之上形成340 nm非晶質碳膜。可確認,於以此方式形成非晶質碳膜之後溫度標籤未發生變色。從而,可確認,於試料1之非晶質碳膜之成膜步驟中,包含無電解鍍鎳層之基材之溫度保持為未達260℃。It is prepared to attach a temperature label having a discoloration temperature of 260 ° C to a substrate on which an electroless nickel plating layer is formed. On the substrate, a 160 nm amorphous carbon film containing ruthenium was formed as an intermediate layer for adhesion by the same procedure as in Sample 1 (without heating at 310 ° C), and 340 nm was formed on the intermediate layer. Amorphous carbon film. It was confirmed that the temperature label did not undergo discoloration after the amorphous carbon film was formed in this manner. Therefore, it was confirmed that in the film formation step of the amorphous carbon film of the sample 1, the temperature of the substrate including the electroless nickel plating layer was maintained at less than 260 °C.

試料2(比較例)之製成Preparation of sample 2 (comparative example)

於將形成有無電解鍍鎳層之1個基材置於280℃下進行60分鐘加熱處理之後,使用與試料1同樣之方法,形成160 nm含有矽之非晶質碳膜作為密接用中間層,於該中間層之上形成340 nm非晶質碳膜,而獲得試料2。After heat-treating one substrate on which the electroless nickel plating layer was formed at 280 ° C for 60 minutes, an amorphous carbon film containing ruthenium 160 nm was formed as an intermediate layer for adhesion, in the same manner as in Sample 1. A 340 nm amorphous carbon film was formed on the intermediate layer, and Sample 2 was obtained.

試料3(實施例)之製成Preparation of sample 3 (Example)

於形成有無電解鍍鎳層之1個基材上,使用與試料1同樣之方法(不進行310℃下之加熱),形成160 nm含有矽之非 晶質碳膜作為密接用中間層,於該中間層之上形成340 nm非晶質碳膜,而獲得試料3。如上所述,通過非晶質碳膜之成膜步驟而使基材之溫度始終保持為未達260℃。On the substrate on which the electroless nickel plating layer was formed, the same method as that of the sample 1 (without heating at 310 ° C) was used to form a 160 nm-containing crucible. The crystalline carbon film was used as an intermediate layer for adhesion, and a 340 nm amorphous carbon film was formed on the intermediate layer to obtain a sample 3. As described above, the temperature of the substrate was always maintained at less than 260 ° C by the film formation step of the amorphous carbon film.

試料4(實施例)之製成Preparation of sample 4 (Example)

將形成有無電解鍍鎳層之1個基材置於230℃下進行60分鐘加熱處理。其次,於該加熱處理後之基材上,使用與試料1同樣之方法(不進行310℃下之加熱),形成160 nm含有矽之非晶質碳膜作為密接用中間層,於該中間層之上形成340 nm非晶質碳膜,而獲得試料4。如上所述,通過非晶質碳膜之成膜步驟而使基材之溫度始終保持為未達260℃。One substrate on which an electroless nickel plating layer was formed was subjected to heat treatment at 230 ° C for 60 minutes. Next, on the substrate after the heat treatment, a 160 nm-containing amorphous carbon film containing ruthenium was formed as an intermediate layer for adhesion in the same manner as in Sample 1 (without heating at 310 ° C). A 340 nm amorphous carbon film was formed thereon, and Sample 4 was obtained. As described above, the temperature of the substrate was always maintained at less than 260 ° C by the film formation step of the amorphous carbon film.

對於所得之試料1~試料4之各者,進行摩擦磨耗試驗。摩擦磨耗試驗係使用新東科學股份有限公司製造之摩擦齒輪(tribo-gear)HHS-2000,於常溫、無潤滑下,藉由以下之測定條件,於各試料之形成有非晶質碳膜之面上,一面使直徑2.0 mm之SUJ2之壓頭反覆往返一面測定各試料表面之摩擦係數。該摩擦係數之測定係藉由加減重往返測定而實施。For each of the obtained Sample 1 to Sample 4, a frictional abrasion test was performed. The frictional wear test was carried out using a tribo-gear HHS-2000 manufactured by Shinto Scientific Co., Ltd., and an amorphous carbon film was formed in each sample under the following conditions at normal temperature and without lubrication. On the surface, the friction coefficient of the surface of each sample was measured while reciprocating the head of SUJ2 having a diameter of 2.0 mm. The measurement of the coefficient of friction is carried out by addition and subtraction of the round-trip measurement.

測定條件1Measurement condition 1

‧測定距離:20 mm‧Measurement distance: 20 mm

‧測定速度:5 mm/sec‧Measurement speed: 5 mm/sec

‧最小荷重:700 g‧Minimum load: 700 g

‧最大荷重:950 g‧Maximum load: 950 g

測定條件2Determination condition 2

‧測定距離:20 mm‧Measurement distance: 20 mm

‧測定速度:5 mm/sec‧Measurement speed: 5 mm/sec

‧最小荷重:500 g‧Minimum load: 500 g

‧最大荷重:700 g‧Maximum load: 700 g

圖2係表示測定條件1下之試料1之與磨耗次數對應之摩擦係數之變化之圖表,圖3係表示測定條件2下之試料1之與磨耗次數對應之摩擦係數之變化之圖表。圖2及圖3之橫軸表示磨耗次數,縱軸表示所測定之摩擦係數。如圖2所示,於測定條件1下,試料1之摩擦係數於試驗剛開始後自0.2 μ左右急驟上升至0.5 μ以上,當磨耗次數為10時(即,使壓頭往返10次時)非晶質碳膜遭到破壞。於確認試料1被破壞之時間點中止試驗。圖4表示於測定條件1下壓頭往返10次之-後拍攝所得之試料1之表面之照片。圖4之照片係使用CCD(Charge Coupled Device,電荷耦合元件)相機以倍率200倍拍攝所得。再者,本說明書中之類似之照片全部係使用CCD相機以倍率200倍拍攝所得者。如圖所示,於壓頭往返10次之後之試料1之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。又,如圖3所示,於測定條件2下,試料1之摩擦係數於試驗剛開始後急驟上升,當磨耗次數為31時非晶質碳膜遭到破壞。於確認試料1被破壞之時間點中止試驗。圖5表示於測定條件2下壓頭往返31次之後拍攝所得之試料1之表面之照片。如圖所示,於壓頭往返31次之後之試料1之表 面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。2 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 1 under the measurement condition 1, and FIG. 3 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 1 under the measurement condition 2. 2 and 3, the horizontal axis represents the number of abrasions, and the vertical axis represents the measured friction coefficient. As shown in Fig. 2, under the measurement condition 1, the friction coefficient of the sample 1 was rapidly increased from about 0.2 μ to 0.5 μ or more immediately after the start of the test, and when the number of abrasions was 10 (that is, when the indenter was reciprocated 10 times) The amorphous carbon film was destroyed. The test was terminated at the point of time when it was confirmed that the sample 1 was destroyed. Fig. 4 is a photograph showing the surface of the sample 1 obtained by photographing the indenter back and forth 10 times under the measurement condition 1. The photograph of Fig. 4 was obtained by photographing at a magnification of 200 times using a CCD (Charge Coupled Device) camera. In addition, similar photographs in this specification are all obtained by photographing at a magnification of 200 times using a CCD camera. As shown in the figure, on the surface of the sample 1 after the indentation was repeated 10 times, the trajectory of the sphere was exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster was exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed. Further, as shown in Fig. 3, under the measurement condition 2, the friction coefficient of the sample 1 was rapidly increased immediately after the start of the test, and when the number of abrasions was 31, the amorphous carbon film was broken. The test was terminated at the point of time when it was confirmed that the sample 1 was destroyed. Fig. 5 is a photograph showing the surface of the sample 1 obtained by photographing the indenter 31 times under the measurement condition 2. As shown in the figure, after the head is reciprocated 31 times, the sample 1 is shown. On the surface, a trajectory of the sphere is exhibited in a strip shape extending in the left-right direction, and a base of the amorphous carbon film having a metallic luster is exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed.

圖6係表示測定條件1下之試料2之與磨耗次數對應之摩擦係數之變化之圖表,圖7係表示測定條件2下之試料2之與磨耗次數對應之摩擦係數之變化之圖表。如圖6所示,於測定條件1下,試料2之摩擦係數於試驗剛開始後急驟上升至將近0.5 μ,當磨耗次數為23時形成於其表面之非晶質碳膜遭到破壞。於確認該試料2被破壞之時間點中止試驗。圖8表示於測定條件1下壓頭往返23次之後拍攝所得之試料2之表面之照片。如圖所示,於壓頭往返23次之後之試料2之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。又,如圖7所示,於測定條件2下,試料2之摩擦係數於試驗剛開始後急驟上升至將近0.5 μ,當磨耗次數為21時非晶質碳膜遭到破壞。於確認試料2被破壞之時間點中止試驗。圖9表示於測定條件2下壓頭往返21次之後拍攝所得之試料2之表面之照片。如圖所示,於壓頭往返21次之後之試料2之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。6 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 2 under the measurement condition 1, and FIG. 7 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 2 under the measurement condition 2. As shown in Fig. 6, under the measurement condition 1, the friction coefficient of the sample 2 rapidly rose to nearly 0.5 μ immediately after the start of the test, and when the number of abrasions was 23, the amorphous carbon film formed on the surface thereof was destroyed. The test was terminated at the time when it was confirmed that the sample 2 was destroyed. Fig. 8 is a photograph showing the surface of the sample 2 obtained by photographing the indenter 23 times under the measurement condition 1. As shown in the figure, on the surface of the sample 2 after the indentation 23 times, the trajectory of the sphere is exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster is exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed. Further, as shown in Fig. 7, under the measurement condition 2, the friction coefficient of the sample 2 was rapidly increased to nearly 0.5 μ immediately after the start of the test, and when the number of abrasions was 21, the amorphous carbon film was destroyed. The test was terminated at the time when it was confirmed that the sample 2 was destroyed. Fig. 9 is a photograph showing the surface of the sample 2 obtained by photographing the indenter 21 times under the measurement condition 2. As shown in the figure, on the surface of the sample 2 after the indentation 21 times, the trajectory of the sphere is exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster is exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed.

圖10係表示測定條件1下之試料3之與磨耗次數對應之摩擦係數之變化之圖表,圖11係表示測定條件2下之試料3之 與磨耗次數對應之摩擦係數之變化之圖表。如圖10及圖11所示,試料3之摩擦係數無論於測定條件1及測定條件2之哪一者下,均為表示非晶質碳膜之存在之0.2 μ前後,較低且穩定,並未發現因該實驗導致之摩擦係數之實質性之上升。圖12表示於測定條件1下壓頭往返100次之後拍攝所得之試料3之表面之照片,圖13表示於測定條件2下壓頭往返100次之後拍攝所得之試料3之表面之照片。如圖所示,無論為於哪個測定條件下進行實驗之情形時,於壓頭往返100次之後之試料3之表面均看不到壓頭之軌跡。由該等試驗結果,可確認試料3表現出良好之耐摩擦磨耗性。Fig. 10 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 3 under the measurement condition 1, and Fig. 11 is a view showing the sample 3 under the measurement condition 2. A graph of the change in friction coefficient corresponding to the number of wears. As shown in FIG. 10 and FIG. 11 , the friction coefficient of the sample 3 is low and stable, regardless of whether the measurement conditions 1 and 2 are both 0.2 μm before and after the presence of the amorphous carbon film. No substantial increase in the coefficient of friction due to this experiment was found. Fig. 12 is a photograph showing the surface of the sample 3 obtained by taking the indenter back and forth 100 times under the measurement condition 1, and Fig. 13 is a photograph showing the surface of the sample 3 obtained by taking the indenter back and forth 100 times under the measurement condition 2. As shown in the figure, the trajectory of the indenter was not observed on the surface of the sample 3 after the indentation was repeated 100 times regardless of the conditions under which the experiment was conducted under the measurement conditions. From the results of these tests, it was confirmed that the sample 3 exhibited good frictional wear resistance.

圖14係表示測定條件1下之試料4之與磨耗次數對應之摩擦係數之變化之圖表,圖15係表示測定條件2下之試料4之與磨耗次數對應之摩擦係數之變化之圖表。如圖14及圖15所示,試料4之摩擦係數無論於測定條件1及測定條件2之哪一者下,均為表示非晶質碳膜之存在之0.2 μ前後,較低且穩定,並未發現因該實驗導致之摩擦係數之實質性之上升。圖16表示於測定條件1下壓頭往返100次之後拍攝所得之試料4之表面之照片,圖17表示於測定條件2下壓頭往返100次之後拍攝所得之試料4之表面之照片。如圖所示,無論為於哪個測定條件下進行實驗之情形時,於壓頭往返100次之後之試料4之表面均看不到壓頭之軌跡。由該等試驗結果,可確認試料4表現出良好之耐摩擦磨耗性。14 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 4 under the measurement condition 1, and FIG. 15 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 4 under the measurement condition 2. As shown in FIG. 14 and FIG. 15 , the friction coefficient of the sample 4 is low and stable, regardless of whether the measurement conditions 1 and 2 are both 0.2 μm before and after the presence of the amorphous carbon film. No substantial increase in the coefficient of friction due to this experiment was found. Fig. 16 is a photograph showing the surface of the sample 4 obtained by photographing the indenter back and forth 100 times under the measurement condition 1, and Fig. 17 is a photograph showing the surface of the sample 4 obtained by photographing the indenter 100 times under the measurement condition 2. As shown in the figure, the trajectory of the indenter was not observed on the surface of the sample 4 after the indentation was repeated 100 times regardless of the conditions under which the experiment was conducted under the measurement conditions. From the results of these tests, it was confirmed that the sample 4 exhibited good frictional wear resistance.

其次,藉由與試料1~3同樣之方法製作試料5~7。試料5~7具有較試料1~3更薄之3 μm之膜厚之無電解鍍鎳層。具 體而言,試料5係藉由與試料1同樣之方法,將基材、鋅取代層、無電解鍍鎳層(3 μm)、非晶質碳膜積層而成,於形成非晶質碳膜之前將基材置於310℃下進行30分鐘加熱處理。試料6係與試料2同樣地,將基材、鋅取代層、無電解鍍鎳層(3 μm)、非晶質碳膜積層而成,藉由將形成非晶質碳膜後之基材置於280℃下進行60分鐘加熱處理而獲得。試料7係與試料3同樣地,將基材、鋅取代層、無電解鍍鎳層(3 μm)、非晶質碳膜積層而形成。與試料3同樣地,試料7之無電解鍍鎳層通過非晶質碳膜之成膜步驟始終為未達260℃。如此,試料5~7之無電解鍍鎳層之厚度均為3 μm,試料5~7於該方面與試料1~3不同。Next, Samples 5 to 7 were prepared by the same method as Samples 1 to 3. Samples 5 to 7 had an electroless nickel plating layer having a film thickness of 3 μm thinner than the samples 1 to 3. With In the same manner as the sample 1, the sample 5 was formed by laminating a substrate, a zinc-substituted layer, an electroless nickel plating layer (3 μm), and an amorphous carbon film to form an amorphous carbon film. The substrate was previously heat treated at 310 ° C for 30 minutes. In the same manner as the sample 2, the sample 6 was formed by laminating a substrate, a zinc-substituted layer, an electroless nickel plating layer (3 μm), and an amorphous carbon film, and the substrate was formed by forming an amorphous carbon film. It was obtained by heat-treating at 280 ° C for 60 minutes. In the same manner as the sample 3, the sample 7 was formed by laminating a substrate, a zinc-substituted layer, an electroless nickel plating layer (3 μm), and an amorphous carbon film. In the same manner as the sample 3, the film formation step of the electroless nickel plating layer of the sample 7 through the amorphous carbon film was always less than 260 °C. Thus, the thickness of the electroless nickel plating layer of the samples 5 to 7 was 3 μm, and the samples 5 to 7 were different from the samples 1 to 3 in this respect.

對於所得之試料5~7之各者,以與試料1~3同樣之方法進行摩擦磨耗試驗。圖18係表示測定條件1下之試料5之與磨耗次數對應之摩擦係數之變化之圖表,圖19係表示測定條件2下之試料5之與磨耗次數對應之摩擦係數之變化之圖表。如圖18所示,於測定條件1下,試料5之摩擦係數於試驗剛開始後急驟上升至1.2 μ左右,當磨耗次數為5時非晶質碳膜遭到破壞。於確認該試料5被破壞之時間點中止試驗。圖20表示於測定條件1下壓頭往返5次之後拍攝所得之試料5之表面之照片。如圖所示,於壓頭往返5次之後之試料5之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。又,如圖19所示,於測定條件2下,試料5之摩擦係數於試驗剛開始後急驟上升 至0.8 μ左右,當磨耗次數為5時非晶質碳膜遭到破壞。於確認該試料5被破壞之時間點中止試驗。圖21表示於測定條件2下壓頭往返5次之後拍攝所得之試料5之表面之照片。如圖所示,於壓頭往返5次之後之試料5之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。For each of the obtained samples 5 to 7, the frictional abrasion test was carried out in the same manner as in the samples 1 to 3. 18 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 5 under the measurement condition 1, and FIG. 19 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 5 under the measurement condition 2. As shown in Fig. 18, under the measurement condition 1, the friction coefficient of the sample 5 was rapidly increased to about 1.2 μ at the beginning of the test, and when the number of abrasions was 5, the amorphous carbon film was destroyed. The test was terminated at the time when it was confirmed that the sample 5 was destroyed. Fig. 20 is a photograph showing the surface of the sample 5 obtained by photographing the indenter five times after the measurement condition 1. As shown in the figure, on the surface of the sample 5 after the urging head is reciprocated five times, the trajectory of the sphere is exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster is exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed. Further, as shown in Fig. 19, under the measurement condition 2, the friction coefficient of the sample 5 sharply rises immediately after the start of the test. To about 0.8 μ, the amorphous carbon film is destroyed when the number of abrasions is 5. The test was terminated at the time when it was confirmed that the sample 5 was destroyed. Fig. 21 is a photograph showing the surface of the sample 5 obtained by photographing the indenter five times after the measurement condition 2. As shown in the figure, on the surface of the sample 5 after the urging head is reciprocated five times, the trajectory of the sphere is exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster is exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed.

圖22係表示測定條件1下之試料6之與磨耗次數對應之摩擦係數之變化之圖表,圖23係表示測定條件2下之試料6之與磨耗次數對應之摩擦係數之變化之圖表。如圖22所示,於測定條件1下,試料6之摩擦係數於試驗剛開始後急驟上升至0.8 μ,當磨耗次數為6時形成於其表面之非晶質碳膜遭到破壞。於確認該試料6被破壞之時間點中止試驗。圖24表示於測定條件1下壓頭往返6次之後拍攝所得之試料6之表面之照片。如圖所示,於壓頭往返6次之後之試料6之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。又,如圖23所示,於測定條件2下,試料6之摩擦係數於試驗剛開始後急驟上升至0.7 μ,當磨耗次數為5時非晶質碳膜遭到破壞。於確認該試料6被破壞之時間點中止試驗。圖25表示於測定條件2下壓頭往返5次之後拍攝所得之試料6之表面之照片。如圖所示,於壓頭往返5次之後之試料6之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤 之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。22 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 6 under the measurement condition 1, and FIG. 23 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 6 under the measurement condition 2. As shown in Fig. 22, under the measurement condition 1, the friction coefficient of the sample 6 was rapidly increased to 0.8 μ immediately after the start of the test, and when the number of abrasions was 6, the amorphous carbon film formed on the surface thereof was destroyed. The test was terminated at the time when it was confirmed that the sample 6 was destroyed. Fig. 24 is a photograph showing the surface of the sample 6 obtained by photographing the indenter six times after the measurement condition 1. As shown in the figure, on the surface of the sample 6 after the urging head was reciprocated six times, the trajectory of the sphere was exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster was exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed. Further, as shown in Fig. 23, under the measurement condition 2, the friction coefficient of the sample 6 was rapidly increased to 0.7 μ immediately after the start of the test, and when the number of abrasions was 5, the amorphous carbon film was destroyed. The test was terminated at the time when it was confirmed that the sample 6 was destroyed. Fig. 25 is a photograph showing the surface of the sample 6 obtained by photographing the indenter five times after the measurement condition 2. As shown in the figure, on the surface of the sample 6 after the reciprocation of the indenter 5 times, the trajectory of the sphere is exhibited in a strip extending in the left-right direction, and the metallic luster is exposed along the trajectory. The base of the amorphous carbon film. Thereby, it was confirmed that the amorphous carbon film was destroyed.

圖26係表示測定條件1下之試料7之與磨耗次數對應之摩擦係數之變化之圖表,圖27係表示測定條件2下之試料7之與磨耗次數對應之摩擦係數之變化之圖表。如圖26所示,於測定條件1下,試料7之摩擦係數於試驗剛開始後急驟上升至1以上,當磨耗次數為5時形成於其表面之非晶質碳膜遭到破壞。於確認該試料7被破壞之時間點中止試驗。又,如圖27所示,試料7之摩擦係數於測定條件2下,為表示非晶質碳膜之存在之0.2 μ前後,較低且穩定,即便於進行100次磨耗次數之試驗之後亦不會發現摩擦係數之實質性之上升。圖28表示於測定條件1下壓頭往返5次之後拍攝所得之試料7之表面之照片。如圖所示,於在測定條件1下實驗壓頭往返5次之後之試料7之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,確認到非晶質碳膜已遭破壞。圖29表示於測定條件2下壓頭往返100次之後拍攝所得之試料7之表面之照片。如圖所示,於壓頭往返100次之後之試料7之表面發現壓頭之軌跡,但如同利用圖27之摩擦係數之變化所可確認之情況一樣,可確認試料7之測定條件2下之摩擦係數自試驗開始直至結束為止始終穩定於0.2 μ左右,且非晶質碳膜維持於試料7之表面。從而,可知試料7至少於荷重比較小之測定條件2之情形時表現出良好之耐摩擦磨耗性。另一方面,試料5及試料6無論測定條件如 何,非晶質碳膜均遭到破壞。從而,由該等試驗結果,可確認試料7表現出較試料5及試料6更加良好之耐摩擦磨耗性。26 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 7 under the measurement condition 1, and FIG. 27 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 7 under the measurement condition 2. As shown in Fig. 26, under the measurement condition 1, the friction coefficient of the sample 7 was rapidly increased to 1 or more immediately after the start of the test, and when the number of abrasions was 5, the amorphous carbon film formed on the surface thereof was destroyed. The test was terminated at the time when it was confirmed that the sample 7 was destroyed. Further, as shown in Fig. 27, the friction coefficient of the sample 7 was low and stable around 0.2 μm indicating the presence of the amorphous carbon film under the measurement condition 2, even after the test of 100 times of abrasion. A substantial increase in the coefficient of friction will be found. Fig. 28 is a photograph showing the surface of the sample 7 obtained by photographing the indenter five times after the measurement condition 1. As shown in the figure, on the surface of the sample 7 after the experimental head is reciprocated 5 times under the measurement condition 1, the trajectory of the sphere is exhibited in a strip extending in the left-right direction, and a metallic luster is exposed along the trajectory. The base of the carbon film. Thus, it was confirmed that the amorphous carbon film was destroyed. Fig. 29 is a photograph showing the surface of the sample 7 obtained by photographing the indenter 100 times after the measurement condition 2. As shown in the figure, the trajectory of the indenter was found on the surface of the sample 7 after the indentation was repeated 100 times, but as in the case where the change in the friction coefficient of Fig. 27 was confirmed, the measurement condition 2 of the sample 7 was confirmed. The coefficient of friction was stable to about 0.2 μ from the start to the end of the test, and the amorphous carbon film was maintained on the surface of the sample 7. Therefore, it is understood that the sample 7 exhibits good frictional wear resistance at least in the case of the measurement condition 2 in which the load is relatively small. On the other hand, sample 5 and sample 6 are determined regardless of measurement conditions. What happens, the amorphous carbon film is destroyed. Therefore, from the results of these tests, it was confirmed that the sample 7 exhibited more excellent frictional wear resistance than the sample 5 and the sample 6.

其次,藉由與試料1~3同樣之方法,製作試料8~9。具體而言,試料8係藉由與試料1同樣之方法,將基材、鋅取代層、無電解鍍鎳層(10 μm)、電解鍍鎳層(10 μm)、非晶質碳膜積層而形成,於非晶質碳膜之成膜前將基材置於310℃下進行30分鐘加熱處理。試料9係與試料3同樣地,將基材、鋅取代層、無電解鍍鎳層(10 μm)、電解鍍鎳層(10 μm)、非晶質碳膜積層而形成。與試料3同樣地,試料9之無電解鍍鎳層通過非晶質碳膜之成膜步驟而始終為未達260℃。試料8~9之電解鍍鎳層係使用業者所熟知之各種方法而形成,例如,使用胺基磺酸鎳、氯化鎳、硼酸、及添加材料(光澤材料),藉由在維持為55℃左右之溶液中通電而形成。其中,於形成電解鍍鎳層之步驟中,以無電解鍍鎳層之溫度始終未達260℃之方式進行溫度管理。試料8~9均具有電解鍍鎳層,於該方面與試料1~3不同。又,試料8~9之無電解鍍鎳層之厚度均為10 μm,試料8~9於該方面亦與試料1~3不同。Next, Samples 8 to 9 were produced by the same method as Samples 1 to 3. Specifically, in the sample 8 , a substrate, a zinc-substituted layer, an electroless nickel plating layer (10 μm), an electrolytic nickel plating layer (10 μm), and an amorphous carbon film were laminated in the same manner as in the sample 1. Forming, the substrate was placed at 310 ° C for 30 minutes before the film formation of the amorphous carbon film. In the same manner as the sample 3, the sample 9 was formed by laminating a substrate, a zinc-substituted layer, an electroless nickel plating layer (10 μm), an electrolytic nickel plating layer (10 μm), and an amorphous carbon film. Similarly to the sample 3, the electroless nickel plating layer of the sample 9 was always less than 260 ° C by the film formation step of the amorphous carbon film. The electrolytic nickel plating layers of Samples 8 to 9 are formed by various methods well known to those skilled in the art, for example, using nickel sulfonate, nickel chloride, boric acid, and an additive material (gloss material) by maintaining at 55 ° C. It is formed by energization of the left and right solutions. Among them, in the step of forming the electrolytic nickel plating layer, the temperature management is performed such that the temperature of the electroless nickel plating layer is always less than 260 °C. Each of the samples 8 to 9 has an electrolytic nickel plating layer, which is different from the samples 1 to 3 in this respect. Further, the thickness of the electroless nickel plating layer of the samples 8 to 9 was 10 μm, and the samples 8 to 9 were different from the samples 1 to 3 in this respect.

對於所得之試料8~9之各者,以與試料1~3同樣之方法進行摩擦磨耗試驗。圖30係表示測定條件1下之試料8之與磨耗次數對應之摩擦係數之變化之圖表,圖31係表示測定條件2下之試料8之與磨耗次數對應之摩擦係數之變化之圖表。如圖30所示,於測定條件1下,試料8之摩擦係數於試 驗剛開始後急驟上升至0.5 μ,當磨耗次數為3時非晶質碳膜遭到破壞。於確認該試料8被破壞之時間點中止試驗。圖32表示於測定條件1下壓頭往返3次之後拍攝所得之試料8之表面之照片。如圖所示,於壓頭往返3次之後之試料8之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。又,如圖31所示,於測定條件2下,試料8之摩擦係數於試驗剛開始後急驟上升至0.5 μ,當磨耗次數為16時非晶質碳膜遭到破壞。於確認該試料8被破壞之時間點中止試驗。圖33表示於測定條件2下壓頭往返16次之後拍攝所得之試料8之表面之照片。如圖所示,於壓頭往返16次之後之試料8之表面上,以沿左右方向延伸之帶狀呈現出球體之軌跡,沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底。由此,可確認非晶質碳膜已遭破壞。For each of the obtained samples 8 to 9, the frictional abrasion test was carried out in the same manner as in the samples 1 to 3. FIG. 30 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 8 under the measurement condition 1, and FIG. 31 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 8 under the measurement condition 2. As shown in Fig. 30, under the measurement condition 1, the friction coefficient of the sample 8 was tested. After the start of the test, it suddenly rises to 0.5 μ, and when the number of wear is 3, the amorphous carbon film is destroyed. The test was terminated at the time when it was confirmed that the sample 8 was destroyed. Fig. 32 is a photograph showing the surface of the sample 8 obtained by photographing the indenter three times after the measurement condition 1. As shown in the figure, on the surface of the sample 8 after the indentation three times, the trajectory of the sphere is exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster is exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed. Further, as shown in Fig. 31, under the measurement condition 2, the friction coefficient of the sample 8 was rapidly increased to 0.5 μ immediately after the start of the test, and when the number of abrasions was 16, the amorphous carbon film was broken. The test was terminated at the time when it was confirmed that the sample 8 was destroyed. Fig. 33 is a photograph showing the surface of the sample 8 obtained by photographing the indenter 16 times after the measurement condition 2. As shown in the figure, on the surface of the sample 8 after the embossing was repeated 16 times, the trajectory of the sphere was exhibited in a strip shape extending in the left-right direction, and the base of the amorphous carbon film having a metallic luster was exposed along the trajectory. Thereby, it was confirmed that the amorphous carbon film was destroyed.

圖34係表示測定條件1下之試料9之與磨耗次數對應之摩擦係數之變化之圖表。如圖所示,於測定條件1下,試料9之摩擦係數係直至磨耗次數約為70次時均顯示為0.2 μ較低之值,然後有所上升。由此可知,於磨耗次數為70前後時,非晶質碳膜遭到破壞且摩擦係數增加。可確認:經過加熱之試料8於磨耗次數為3次時便破壞,相對於此,試料9直至磨耗次數為70次為止依然維持非晶質碳膜,非晶質碳膜之密接性明顯提昇。圖35表示於測定條件1下壓頭往返100次之後拍攝所得之試料9之表面之照片。如圖所示, 可確認:呈現出球體之軌跡且沿著該軌跡露出具有金屬光澤之非晶質碳膜之基底,此被認為係因磨耗次數70次前後以後之非晶質碳膜之剝離而產生。Fig. 34 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 9 under the measurement condition 1. As shown in the figure, under the measurement condition 1, the coefficient of friction of the sample 9 showed a value of 0.2 μ lower until the number of abrasions was about 70 times, and then increased. From this, it is understood that when the number of abrasions is about 70, the amorphous carbon film is broken and the friction coefficient is increased. It was confirmed that the sample 8 which was heated was destroyed when the number of abrasions was three, whereas the sample 9 maintained the amorphous carbon film until the number of abrasions was 70, and the adhesion of the amorphous carbon film was remarkably improved. Fig. 35 is a photograph showing the surface of the sample 9 obtained by photographing the indenter 100 times after the measurement condition 1. as the picture shows, It was confirmed that the substrate having the trajectory of the sphere and exposing the amorphous carbon film having the metallic luster along the trajectory was considered to be caused by the peeling of the amorphous carbon film after the abrasion time of 70 times.

本說明書中所說明之硬質膜被覆構件及其製作方法僅為例示,對於其構成、材料、形成方法,可於不脫離本發明之主旨之範圍內進行各種變更。例如,於基材10與鋅取代層20之間、及/或鋅取代層20與無電解鍍鎳層30之間,亦可藉由噴鍍法或蒸鍍法形成Ni薄膜或Cu薄膜。又,於鋅取代層20與無電解鍍鎳層30之間,亦可形成閃鍍銅膜。該等Ni薄膜、Cu薄膜、及閃鍍銅膜係以形成300 nm以下之膜厚之方式形成得非常薄,故而對於硬質膜40之密接性無實質性影響。除了本說明書中具體所說明之內容以外,於基材10與鋅取代層20之間、鋅取代層20與無電解鍍鎳層30之間、無電解鍍鎳層30與硬質膜40之間,亦可於不脫離本發明之主旨之範圍內設置各種薄膜。又,對於基材10、鋅取代層20、無電解鍍鎳層30、及硬質膜40可適當地根據目的進行表面處理。The hard film covering member described in the present specification and the method for producing the same are merely exemplified, and various modifications can be made without departing from the spirit and scope of the invention. For example, a Ni thin film or a Cu thin film may be formed between the substrate 10 and the zinc substitution layer 20, and/or between the zinc substitution layer 20 and the electroless nickel plating layer 30 by a sputtering method or a vapor deposition method. Further, a flash copper film may be formed between the zinc substitution layer 20 and the electroless nickel plating layer 30. These Ni thin films, Cu thin films, and flash copper plating films are formed so as to have a film thickness of 300 nm or less, and thus have no substantial influence on the adhesion of the hard film 40. In addition to what is specifically described in the present specification, between the substrate 10 and the zinc-substituted layer 20, between the zinc-substituted layer 20 and the electroless nickel-plated layer 30, between the electroless nickel-plated layer 30 and the hard film 40, Various films may be provided without departing from the gist of the invention. Moreover, the base material 10, the zinc substitution layer 20, the electroless nickel plating layer 30, and the hard film 40 can be surface-treated suitably according to the objective.

1‧‧‧硬質膜被覆構件1‧‧‧hard film covering member

10‧‧‧基材10‧‧‧Substrate

20‧‧‧鋅取代層20‧‧‧Zinc replacement layer

30‧‧‧無電解鍍鎳層30‧‧‧Electroless nickel plating

40‧‧‧硬質膜40‧‧‧hard film

圖1係示意性地表示本發明之一實施形態之硬質膜被覆構件之圖。Fig. 1 is a view schematically showing a hard film covering member according to an embodiment of the present invention.

圖2係表示測定條件1下之試料1之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 2 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 1 under the measurement condition 1.

圖3係表示測定條件2下之試料1之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 3 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 1 under the measurement condition 2.

圖4係於測定條件1下壓頭往返10次之後拍攝所得之試料1之表面之照片。Fig. 4 is a photograph of the surface of the sample 1 obtained by photographing the indenter 10 times after the measurement condition 1.

圖5係於測定條件2下壓頭往返31次之後拍攝所得之試料1之表面之照片。Fig. 5 is a photograph of the surface of the sample 1 obtained by photographing the indenter 31 times after the measurement condition 2.

圖6係表示測定條件1下之試料2之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 6 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 2 under the measurement condition 1.

圖7係表示測定條件2下之試料2之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 7 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 2 under the measurement condition 2.

圖8係於測定條件1下壓頭往返23次之後拍攝所得之試料2之表面之照片。Fig. 8 is a photograph of the surface of the sample 2 obtained by photographing the indenter 23 times after the measurement condition 1.

圖9係於測定條件2下壓頭往返21次之後拍攝所得之試料2之表面之照片。Fig. 9 is a photograph of the surface of the sample 2 obtained by photographing the indenter 21 times after the measurement condition 2.

圖10係表示測定條件1下之試料3之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 10 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 3 under the measurement condition 1.

圖11係表示測定條件2下之試料3之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 11 is a graph showing changes in the friction coefficient of the sample 3 under the measurement condition 2 in accordance with the number of abrasions.

圖12係於測定條件1下壓頭往返100次之後拍攝所得之試料3之表面之照片。Fig. 12 is a photograph of the surface of the sample 3 obtained by photographing the indenter 100 times after the measurement condition 1.

圖13係於測定條件2下壓頭往返100次之後拍攝所得之試料3之表面之照片。Fig. 13 is a photograph of the surface of the sample 3 obtained by photographing the indenter 100 times after the measurement condition 2.

圖14係表示測定條件1下之試料4之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 14 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 4 under the measurement condition 1.

圖15係表示測定條件2下之試料4之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 15 is a graph showing changes in the friction coefficient of the sample 4 under the measurement condition 2 in accordance with the number of abrasions.

圖16係於測定條件1下壓頭往返100次之後拍攝所得之試料4之表面之照片。Fig. 16 is a photograph of the surface of the sample 4 obtained by photographing the indenter 100 times after the measurement condition 1.

圖17係於測定條件2下壓頭往返100次之後拍攝所得之試料4之表面之照片。Fig. 17 is a photograph of the surface of the sample 4 obtained by photographing the indenter 100 times after the measurement condition 2.

圖18係表示測定條件1下之試料5之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 18 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 5 under the measurement condition 1.

圖19係表示測定條件2下之試料5之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 19 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 5 under the measurement condition 2.

圖20係於測定條件1下壓頭往返5次之後拍攝所得之試料5之表面之照片。Fig. 20 is a photograph of the surface of the sample 5 obtained by photographing the indenter five times after the measurement condition 1.

圖21係於測定條件2下壓頭往返5次之後拍攝所得之試料5之表面之照片。Fig. 21 is a photograph of the surface of the sample 5 obtained by photographing the indenter five times after the measurement condition 2.

圖22係表示測定條件1下之試料6之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 22 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 6 under the measurement condition 1.

圖23係表示測定條件2下之試料6之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 23 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 6 under the measurement condition 2.

圖24係於測定條件1下壓頭往返6次之後拍攝所得之試料6之表面之照片。Fig. 24 is a photograph of the surface of the sample 6 obtained by photographing the indenter six times after the measurement condition 1.

圖25係於測定條件2下壓頭往返5次之後拍攝所得之試料6之表面之照片。Fig. 25 is a photograph of the surface of the sample 6 obtained by photographing the indenter five times after the measurement condition 2.

圖26係表示測定條件1下之試料7之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 26 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 7 under the measurement condition 1.

圖27係表示測定條件2下之試料7之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 27 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 7 under the measurement condition 2.

圖28係於測定條件1下壓頭往返5次之後拍攝所得之試料7之表面之照片。Fig. 28 is a photograph of the surface of the sample 7 obtained by photographing the indenter five times after the measurement condition 1.

圖29係於測定條件2下壓頭往返100次之後拍攝所得之試料7之表面之照片。Fig. 29 is a photograph of the surface of the sample 7 obtained by photographing the indenter 100 times after the measurement condition 2.

圖30係表示測定條件1下之試料8之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 30 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 8 under the measurement condition 1.

圖31係表示測定條件2下之試料8之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 31 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 8 under the measurement condition 2.

圖32係於測定條件1下壓頭往返3次之後拍攝所得之試料8之表面之照片。Fig. 32 is a photograph of the surface of the sample 8 obtained by photographing the indenter three times after the measurement condition 1.

圖33係於測定條件2下壓頭往返16次之後拍攝所得之試料8之表面之照片。Fig. 33 is a photograph of the surface of the sample 8 obtained by photographing the indenter 16 times after the measurement condition 2.

圖34係表示測定條件1下之試料9之與磨耗次數對應之摩擦係數之變化之圖表。Fig. 34 is a graph showing changes in the friction coefficient corresponding to the number of abrasions of the sample 9 under the measurement condition 1.

圖35係於測定條件1下壓頭往返100次之後拍攝所得之試料9之表面之照片。Fig. 35 is a photograph of the surface of the sample 9 taken after the indentation was repeated 100 times under the measurement condition 1.

1‧‧‧硬質膜被覆構件1‧‧‧hard film covering member

10‧‧‧基材10‧‧‧Substrate

20‧‧‧鋅取代層20‧‧‧Zinc replacement layer

30‧‧‧無電解鍍鎳層30‧‧‧Electroless nickel plating

40‧‧‧硬質膜40‧‧‧hard film

Claims (20)

一種硬質膜被覆構件,其包括:基材,其包含軟質金屬;非晶狀之無電解鍍鎳層,其形成於上述基材上;及硬質膜,其直接形成於上述無電解鍍鎳層。 A hard film covering member comprising: a substrate comprising a soft metal; an amorphous electroless nickel plating layer formed on the substrate; and a hard film directly formed on the electroless nickel plating layer. 如請求項1之硬質膜被覆構件,其中上述無電解鍍鎳層為無電解鍍Ni-P層。 The hard film coating member according to claim 1, wherein the electroless nickel plating layer is an electroless Ni-P plating layer. 如請求項1之硬質膜被覆構件,其中上述無電解鍍鎳層為無電解鍍Ni-B層。 The hard film coating member according to claim 1, wherein the electroless nickel plating layer is an electroless Ni-B plating layer. 如請求項2之硬質膜被覆構件,其中上述無電解鍍Ni-P層中之磷之含量為8wt%以上。 The hard film coating member according to claim 2, wherein the content of phosphorus in the electroless plating Ni-P layer is 8 wt% or more. 如請求項3之硬質膜被覆構件,其中上述無電解鍍Ni-B層中之硼之含量為3wt%以上。 The hard film coating member according to claim 3, wherein the content of boron in the electroless plating Ni-B layer is 3% by weight or more. 如請求項2之硬質膜被覆構件,其中上述硬質膜係以上述無電解鍍Ni-P層保持為未達260℃之方式成膜。 The hard film coating member according to claim 2, wherein the hard film film is formed so that the electroless Ni-P layer is kept at less than 260 °C. 如請求項3之硬質膜被覆構件,其中上述硬質膜係以上述無電解鍍Ni-B層保持為未達300℃之方式成膜。 The hard film coating member according to claim 3, wherein the hard film film is formed so that the electroless Ni-B layer is kept at less than 300 °C. 如請求項1之硬質膜被覆構件,其中上述基材包含鋁或鋁合金。 The hard film covering member of claim 1, wherein the substrate comprises aluminum or an aluminum alloy. 如請求項1之硬質膜被覆構件,其中上述硬質膜包含選自由非晶質碳膜、或包含Si之非晶質碳膜、Ti、AlN、TiCN、TiC、TiN、TiAlN、CrC、CrN、SiC、及SiOX所組成之群中之1種以上之硬質膜素材。 The hard film coating member according to claim 1, wherein the hard film comprises an amorphous carbon film selected from the group consisting of amorphous carbon film or Si, Ti, AlN, TiCN, TiC, TiN, TiAlN, CrC, CrN, SiC. And one or more hard film materials of the group consisting of SiOX. 如請求項1之硬質膜被覆構件,其中於上述基材與上述 無電解鍍鎳層之間形成有鋅取代層。 The hard film covering member according to claim 1, wherein the substrate and the above A zinc-substituted layer is formed between the electroless nickel plating layers. 一種硬質膜被覆構件之製作方法,其包括如下步驟:準備包含軟質金屬之基材,於上述基材上形成非晶狀之無電解鍍鎳層,及於上述無電解鍍鎳層直接形成硬質膜。 A method for manufacturing a hard film covering member, comprising the steps of: preparing a substrate comprising a soft metal, forming an amorphous electroless nickel plating layer on the substrate, and directly forming a hard film on the electroless nickel plating layer; . 如請求項11之製作方法,其中上述無電解鍍鎳層為無電解鍍Ni-P層。 The method of claim 11, wherein the electroless nickel plating layer is an electroless Ni-P plating layer. 如請求項11之製作方法,其中上述無電解鍍鎳層為無電解鍍Ni-B層。 The method of claim 11, wherein the electroless nickel plating layer is an electroless Ni-B plating layer. 如請求項12之製作方法,其中上述無電解鍍Ni-P層中之磷之含量為8wt%以上。 The method of claim 12, wherein the content of phosphorus in the electroless Ni-P layer is 8 wt% or more. 如請求項13之製作方法,其中上述無電解鍍Ni-B層中之硼之含量為3wt%以上。 The method of claim 13, wherein the content of boron in the electroless Ni-B layer is 3% by weight or more. 如請求項12之製作方法,其中上述硬質膜係以上述無電解鍍Ni-P層保持為未達260℃之方式成膜。 The method of claim 12, wherein the hard film is formed by holding the electroless Ni-P layer at a temperature of less than 260 °C. 如請求項13之製作方法,其中上述硬質膜係以上述無電解鍍Ni-B層保持為未達300℃之方式成膜。 The method according to claim 13, wherein the hard film film is formed so that the electroless Ni-B layer is kept at less than 300 °C. 如請求項11之製作方法,其中上述基材包含鋁或鋁合金。 The method of claim 11, wherein the substrate comprises aluminum or an aluminum alloy. 如請求項11之製作方法,其中上述硬質膜包含選自由類鑽碳、含矽類鑽碳、TiAlN、TiCN、TiC、TiN、CrC、CrN、SiC、及SiOX所組成之群中之1種以上之硬質膜素材。 The method of claim 11, wherein the hard film comprises one or more selected from the group consisting of diamond-like carbon, ruthenium-containing diamond carbon, TiAlN, TiCN, TiC, TiN, CrC, CrN, SiC, and SiOX. Hard film material. 如請求項11之製作方法,其進而包括於上述基材上形成 鋅取代層之步驟,且上述無電解鍍鎳層係形成於上述鋅取代層之表面。 The method of claim 11, further comprising forming on the substrate The step of replacing the layer with zinc, and the electroless nickel plating layer is formed on the surface of the zinc substitution layer.
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