KR20160147161A - Method of manufacturing for flux and pressure detection board - Google Patents

Method of manufacturing for flux and pressure detection board Download PDF

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Publication number
KR20160147161A
KR20160147161A KR1020150083349A KR20150083349A KR20160147161A KR 20160147161 A KR20160147161 A KR 20160147161A KR 1020150083349 A KR1020150083349 A KR 1020150083349A KR 20150083349 A KR20150083349 A KR 20150083349A KR 20160147161 A KR20160147161 A KR 20160147161A
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KR
South Korea
Prior art keywords
thin film
sensor
substrate
flow rate
sensing
Prior art date
Application number
KR1020150083349A
Other languages
Korean (ko)
Inventor
김주형
이영준
Original Assignee
인하대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 인하대학교 산학협력단 filed Critical 인하대학교 산학협력단
Priority to KR1020150083349A priority Critical patent/KR20160147161A/en
Publication of KR20160147161A publication Critical patent/KR20160147161A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
    • G01F1/86—Indirect mass flowmeters, e.g. measuring volume flow and density, temperature or pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
    • G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
    • G01P5/12—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables using variation of resistance of a heated conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current

Abstract

(A) depositing a first thin film and a second thin film on top and bottom of a silicon substrate, (b) depositing a first thin film and a second thin film on the first thin film, (C) forming a PR coating on top of the flow sensor, (d) lithographically processing a portion of the PR coated portion, (e) applying a lithographic treatment to the lithographic treated portion, (F) depositing electrodes on the flow sensor and the pressure sensor, (h) depositing electrodes on the flow sensor and the pressure sensor, (h) depositing electrodes on the flow sensor and the pressure sensor, Depositing a third thin film on top of the sensor, and (i) opening a lower portion of the silicon substrate through a KOH etch to a portion of the silicon substrate and the second thin film. Therefore, it is possible to detect temperature, flow rate, flow rate, and pressure using a single substrate, and it is possible to reduce the space required for substrate mounting compared with the case of separately providing a substrate for detecting a flow rate and a substrate for pressure sensing There is an effect that a manufacturing process of a sensor substrate can be provided.

Description

FIELD AND PRESSURE DETECTION BOARD BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a flow rate and pressure sensing substrate, and more particularly, to a manufacturing method for manufacturing a substrate for sensing temperature, flow rate, flow rate and pressure of a fluid.

As a flow rate sensor for detecting a flow rate, there is disclosed a technique of providing a heat generating element and measuring the temperature of the heat generating element and calculating the flow velocity according to the temperature change of the measured heat generating element.

As an example of a flow rate sensor using a heat generating element, Korean Patent Registration No. 0931702, entitled Thermopile Flow Rate Sensor, is known.

In the case of the prior art, the flow rate and the flow rate of the measurement fluid are measured by using the resistance as a heating element and including at least two temperature sensing portions and using the temperature change measured by the temperature sensing portion.

However, in the case of this prior art document, a temperature sensing unit is provided to measure only the flow rate and flow rate of the fluid, so that a pressure sensor must be separately provided to measure the pressure of the measurement fluid.

Accordingly, there is a need for the development of a composite sensor including both a flow rate sensor and a pressure sensor, and a manufacturing method thereof.

SUMMARY OF THE INVENTION The present invention provides a method of manufacturing a composite sensor substrate capable of sensing temperature, flow rate, flow velocity, and pressure of a fluid.

(A) depositing a first thin film and a second thin film on top and bottom of a silicon substrate, (b) depositing a first thin film and a second thin film on the first thin film, (C) forming a PR coating on top of the flow sensor, (d) lithographically processing a portion of the PR coated portion, (e) exposing the lithographic processed (F) depositing electrodes on the flow sensor and the pressure sensor, (h) depositing electrodes on the flow sensor and the pressure sensor, Depositing a third thin film on top of the pressure sensor, and (i) opening a lower portion of the silicon substrate through a KOH etch to a portion of the silicon substrate and the second thin film .

In one example, the pressure sensor formed in step (b) is formed of a Pt / Ti layer.

In one example, the pressure sensor formed in step (b) is formed of a Cu / a-Si layer.

In this case, the pressure sensor deposited in the step (e) is a TaN / Chromel thin film.

In another example, the pressure sensor deposited in the step (e) is a Cr / Chromel thin film.

According to this aspect, the flow sensor including the heat generating unit and the first sensing unit and the pressure sensor, which is the second sensing unit, can be implemented on the same substrate from the above steps, so that a composite sensor including a flow sensor and a pressure sensor can be manufactured have.

In addition, the composite sensor manufactured from the above steps can detect the temperature, flow rate, flow rate, and pressure of the fluid, thereby achieving miniaturization of the substrate.

1 is a side view showing the structure of a flow rate and pressure sensing substrate to be formed by a flow rate and pressure sensing substrate manufacturing method according to an embodiment of the present invention.
2 is a view illustrating a method of manufacturing a flow rate and pressure sensing substrate according to an embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a flow rate and pressure sensing substrate according to an embodiment of the present invention.
FIG. 4 is a graph showing a flow rate formed according to the flow rate and pressure sensing substrate manufacturing method according to an embodiment of the present invention and a first graph output from the first sensing unit of the sensing substrate.
FIG. 5 is a graph showing a flow rate formed according to the flow rate and pressure sensing substrate manufacturing method according to an embodiment of the present invention, and a second graph output from the first sensing unit of the sensing substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

A method of manufacturing a flow rate and pressure sensing substrate according to an embodiment of the present invention will now be described with reference to the accompanying drawings.

First, a flow rate and a sensing substrate to be finally formed by the flow rate and pressure sensing substrate manufacturing method of the present invention will be described with reference to FIG.

1, the flow rate and pressure sensing substrate includes a silicon substrate 10, a first membrane membrane 21 formed on the silicon substrate 10, a plurality of first sensing membranes 21 formed on the first membrane membrane 21, And a third membrane thin film 23 formed on the upper portion of the silicon substrate 10 and the second membrane thin film 23 formed on the lower portion of the silicon substrate 10, (22).

The silicon wafer (Si wafer) 10 may be a 6 inch p-type silicon substrate.

The first membrane thin film 21 is a thin film deposited on the top of the silicon substrate 10 and may be a Si 3 N 4 thin film.

At this time, the first membrane thin film 21 is preferably deposited on the silicon substrate 10 using LP-CVD (low pressure chemical vapor deposition).

The heating unit 30 is a platinum (Pt) heater 32 that generates heat in accordance with electrical connection. The heater 30 includes a Pt / Ti layer 31 including a buffer layer of titanium (Ti) 31 between the first membrane films 21, Structure.

At this time, the platinum 32 portion may be formed as a pattern.

At this time, the heating unit 30, which is a Pt / Ti layer, which is a buffer layer of platinum 32 and titanium 31, may be formed in a thin film form using an E-beam evaporator.

The plurality of first sensing units 40 are formed at equal intervals around the heat generating unit 30. In one example, the first sensing unit 40 includes the heat generating unit 30 as shown in FIG. Respectively.

In one example, the interval between the heat generating unit 30 and the first sensing unit 40 and the interval between the two adjacent first sensing units 41 and 42 may be 500 占 퐉.

However, at this time, the number of the first sensing units 40 formed around the heat generating unit 30 may be three or more.

In one example, the greater the number of the first sensing portions 40 formed around the heat generating portion 30, the more sensitively the change in the heat generated in the heat generating portion 30 can be sensed.

As described above, the plurality of first sensing units 40 is a temperature sensing unit that senses a change in heat generated in the heat generating unit 30, and generates a resistance according to the sensed temperature to output a resistance value.

The first sensing units (for example, 41 and 44) located apart from the heating unit 30 measure the temperature of the fluid and output the measured temperature.

At this time, the first sensing units (for example, 42 and 43) positioned adjacent to the heating unit 30 among the first sensing units 40 may be a fluid passing through the upper portion of the first sensing unit 40, Resistance is generated according to the temperature of water.

More specifically, the first sensing unit 43 immediately adjacent to the heat generating unit 30 senses a temperature higher than that of the first sensing unit 44 located away from the heat generating unit 30, (41, 42, 43, 44) to sense the respective temperatures.

The first sensing unit 40 is formed in the same Pt / Ti thin film as the heating unit 30 and outputs a resistance value according to temperature as shown in the graph of FIG.

As shown in FIG. 4, when the first sensing unit 40 is a Pt / Ti thin film, the resistance value is outputted in a form such that the resistance linearly increases as the temperature rises.

In another example, when the first sensing portion 40 is formed of a Cu / a-Si thin film formed of amorphous silicon (a-Si) and copper (Cu) As shown in the graph, the resistance value is outputted in a form in which the resistance value decreases to the inverse graph shape as the temperature increases.

Referring to FIG. 1, the structure of the flow rate and pressure sensing substrate according to an embodiment of the present invention will be described. The second sensing unit 50 is located apart from the first sensing unit 44, Output the value.

At this time, the second sensing unit 50 is a Cr / Chromel thin film including chromium (Cr) and chrome (Chromel), and is deposited on the first membrane thin film 21 by using a sputter.

In another example, the second sensing portion 50 may be formed of a TaN / Chromel thin film.

The electrode 60 (61, 62) for fixing the second sensing portion 50 to the first membrane thin film 21 may be formed of Ti / Al.

The third membrane thin film 23 is a protective thin film coated on top of the plurality of first sensing portions 41, 42, 43, and 44, the heating portion 30, the second sensing portion 50, , The first membrane thin film 21 may be formed of a Si 3 N 4 thin film.

The third membrane thin film 23 may be deposited using plasma enhanced chemical vapor deposition (PE-CVD).

The second membrane thin film 22 is a Si 3 N 4 thin film deposited on the lower portion of the silicon substrate 10 and may be deposited by LP-CVD like the first membrane thin film 21.

In addition, the silicon substrate 10 and the second membrane film 22 have open structures 70 (71, 72), which are opened through KOH etching. As the open structure is formed, the silicon substrate 10 ) Can be improved.

At this time, since the openings are formed in the silicon substrate 10 and the second membrane thin film 22, the second membrane thin film 22 has a structure of the structure formed at the lower end of the silicon substrate 10, 2 membrane thin film 22 (22a, 22b, 22c).

2 and 3, a flow of manufacturing a flow rate and pressure sensing substrate having a structure as described with reference to FIG. 1 will be described. First, in step (a) The first thin film 21 and the second thin film 22 which are Si3N4 thin films are deposited.

Then, in step (b), a plurality of first sensing parts 30 and a heat generating part are formed on the first thin film 21, which is a Si3N4 thin film, for deposition of a flow sensor.

1, the first sensing unit 40 and the heat generating unit 30 are formed of the same material and structure as the first sensing unit 40 and the heating unit 30 in the flow rate and pressure sensing substrate described with reference to FIG. The first sensing unit 40 and the heat generating unit 30 will be described as the same flow sensor 30 in the flow of the manufacturing method with reference to FIG.

At this time, the flow sensor 30 includes a platinum layer 32 and a titanium buffer layer 31.

In another example, the flow sensor 30 formed in step (b) may be a thin film containing amorphous silicon and copper.

a PR coating 90 is formed on the upper portion of the flow sensor 30 and the upper portion of the first thin film 21 in step (c), and lithography is performed on a part of the PR coating 90 in step (d) .

Next, in step (e), the second sensing unit 50, which is a pressure sensor, is deposited on the lithographically processed portion.

In step (f), the PR coating 90 formed in step (c) is lifted off. In step (g), the flow sensor 30 and the second sensing part 50, which is a pressure sensor, 60, 61 and 62, respectively.

Then, in step (h), the Si3N4 thin film as the third thin film 23 is applied to the first sensing unit 30 and the second sensing unit 50 Lt; / RTI >

Finally, in the step (i), the lower portion of the silicon substrate 10 is opened (71, 72) by KOH etching on a part of the silicon substrate 10 and the second thin film 22.

Since the flow rate and pressure sensing substrate to be produced by the manufacturing method including these steps forms the flow sensor 30 and the second sensing unit 50 on the same substrate, the flow sensor 30 and the second sensing unit 50) can be formed in a complex manner on one substrate.

That is, it is possible to detect the temperature, the flow rate, the flow rate, and the pressure of the fluid by using a single substrate, and it is possible to reduce the space required for mounting the substrate, It is effective.

At this time, the flow sensor 30 formed in the step (b) senses the heat of the fluid moving on the substrate, more specifically, it senses the temperature of the fluid and measures it as temperature information. The change in resistance value is measured, and the measured temperature information and resistance value change are output.

The second sensing unit 50 senses the pressure of the fluid moving on the upper surface of the substrate and outputs a pressure value.

Accordingly, since the temperature information, the resistance change value, and the pressure value are output from the flow sensor 30 and the second sensing unit 50, the flow rate and pressure sensing substrate formed by the flow rate and pressure sensing substrate manufacturing method of the present invention, The temperature information, the resistance value change, and the pressure value can be processed through a processing unit (not shown) provided on the substrate to extract temperature, flow rate, flow rate, and pressure value.

At this time, the resistance change value output from the flow sensor 30 has a resistance change pattern as shown in the graph of FIG. 4 when the flow sensor 30 is Pt / Ti, and the flow sensor 30 is made of Cu / a-Si 5, the processing unit calculates the flow rate and flow rate of the fluid according to the resistance change value.

For example, when calculating the flow rate and the flow rate according to the resistance change value appearing in the graph of FIG. 3, as the resistance value output from the flow rate sensor 30 is greatly reduced in two consecutive time units, And it is calculated that the flow rate of the fluid is very fast.

On the other hand, as the resistance value decreases to a small width in two consecutive time units, the processing unit determines that the temperature has decreased to a small width and calculates that the flow rate of the fluid is slow.

When the flow rate and the flow velocity are calculated according to the resistance change value as shown in the graph of FIG. 4, the processor determines that the temperature has greatly decreased as the resistance value increases greatly in two consecutive time units. It is calculated that the flow rate is slow.

On the other hand, as the resistance value increases slightly in two consecutive time units, the processor determines that the temperature has decreased to a small width and calculates that the flow rate of the fluid is slow.

At this time, since the flow sensor 30 having the resistance value changed in the form of the graph of FIG. 4 is provided, the processing unit can sensitively extract the change of the resistance value, and the flow rate of the fluid can be finely calculated .

In addition, the processing unit, which may be provided in the substrate, determines the flow rate of the fluid by using a change in the resistance value output from the flow rate sensor 30.

For example, when the resistance value variation width is large, it is determined that the flow rate is small, and when the resistance value variation is not relatively large, it is determined that the fluid flow rate is large.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

10: silicon substrate 21: first membrane thin film
22: Membrane thin film 23: Third membrane thin film
30: a heating unit 40: a first sensing unit
50: second sensing unit

Claims (5)

(a) depositing a first thin film and a second thin film on top and bottom of a silicon substrate,
(b) forming a first sensing unit and a heat generating unit, which are flow sensors, on the first thin film,
(c) forming a PR coating on top of said flow sensor,
(d) lithographically treating a portion of the PR coated portion,
(e) depositing a second sensing portion, which is a pressure sensor, on the lithographically processed portion,
(f) lifting off the PR coating,
(g) depositing electrodes on the flow sensor and the pressure sensor, respectively,
(h) depositing a third thin film over the flow sensor and the pressure sensor, and
(i) opening a lower portion of the silicon substrate through a KOH etch to a portion of the silicon substrate and the second thin film
Wherein the pressure-sensitive adhesive layer is formed on the substrate. The method according to claim 1,
Wherein the pressure sensor formed in step (b) is formed of a Pt / Ti layer. The method according to claim 1,
Wherein the pressure sensor formed in step (b) is formed of a Cu / a-Si layer. The method according to claim 1,
Wherein the pressure sensor deposited in step (e) is a TaN / Chromel thin film. The method according to claim 1,
Wherein the pressure sensor deposited in step (e) is a Cr / Chromel thin film.
KR1020150083349A 2015-06-12 2015-06-12 Method of manufacturing for flux and pressure detection board KR20160147161A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200027234A (en) * 2018-09-04 2020-03-12 현대자동차주식회사 Micorphone, fabricating method for microphone, and control method for microphone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200027234A (en) * 2018-09-04 2020-03-12 현대자동차주식회사 Micorphone, fabricating method for microphone, and control method for microphone

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