KR20160139620A - Chemical mechanical polishing apparatus for substrate - Google Patents

Abstract

Disclosed are a method for controlling the temperature of a polishing pad and an apparatus for polishing a substrate, which can control the temperature of a polishing pad and uniformly maintain the polishing quality of a substrate. The apparatus for polishing a substrate includes: a polishing surface plate having the polishing pad for polishing the substrate; a substrate carrier grasping the substrate to come into contact with the polishing pad; and a temperature control unit prepared in the upper portion of the polishing pad and providing a control medium for controlling the temperature of the polishing pad.

Description

Technical Field [0001] The present invention relates to a chemical mechanical polishing apparatus,

The present invention relates to a chemical mechanical polishing apparatus for a substrate, and more particularly, to a chemical mechanical polishing apparatus capable of adjusting the temperature of a polishing pad so as to improve the uniformity of the polishing surface.

BACKGROUND ART [0002] Recently, with the rapid spread of an information medium such as a computer, semiconductor devices are rapidly developing. In terms of its function, the semiconductor device is required to operate at high speed and to have a large storage capacity. In response to this demand, semiconductor processing technology is being developed in the direction of improving the degree of integration, reliability, and response speed and the like.

A silicon substrate widely used as a material for manufacturing semiconductor devices refers to a single crystal silicon thin plate made of polycrystalline silicon as a raw material. The substrate manufacturing process includes a slicing process for cutting a grown silicon single crystal ingot into thin plates, a lapping process for uniformizing and flattening the thickness of the substrate, a process for eliminating or alleviating damages caused in the slicing process and the lapping process A polishing process for mirror-polishing the surface of the substrate, and a cleaning process for cleaning the polished substrate and removing foreign matters adhered to the surface.

Here, the polishing process is divided into stock polishing, which removes the surface alteration layer of the substrate and improves the thickness uniformity, and final polishing which polishes the surface of the substrate to mirror surface.

In the final polishing process, a polishing head, which fixes a substrate with a predetermined pressure, and a polishing table, which is a table with a polishing cloth, are mechanically polished by a chemical reaction by a polishing slurry composed of a colloidal silica, A chemical mechanical polishing (CMP) apparatus is used.

In such a CMP apparatus, a substrate carrier is used as an apparatus for holding a substrate. The substrate carrier holds the substrate directly and indirectly by vacuum suction, and a membrane type is mainly used. In addition, there has been proposed a multi-layer split polishing type substrate carrier capable of variously adjusting the polishing profile of a substrate by applying a different local pressure to one substrate, beyond simply polishing the surface of the substrate by applying a uniform pressure have.

On the other hand, the polished profile of the substrate is affected by the polishing temperature. For example, an increase in temperature during polishing of a substrate increases the chemical action of the polishing slurry, which results in an increase in the polishing rate and an increase in the polishing rate. That is, since the polishing rate is a function of the temperature, the importance of accurately controlling the temperature in the polishing environment is emphasized.

However, there has been a conventional method of controlling the temperature of the polishing pad by changing the flow rate of cooling water flowing into and out of the polishing pad. However, with conventional polishing pad temperature control methods, the thermal response was too slow to provide accurate temperature control in a polishing environment.

According to embodiments of the present invention, a chemical mechanical polishing apparatus capable of controlling the temperature of the polishing pad and improving the polishing uniformity of the substrate is disclosed.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to embodiments of the present invention, a substrate polishing apparatus includes a polishing pad having a polishing pad for polishing a substrate, a substrate carrier holding the substrate to be brought into contact with the polishing pad, And a temperature controller provided on the polishing pad to provide a conditioning medium for adjusting the temperature of the polishing pad.

According to one aspect, the conditioning medium may provide any one of a liquid or a gas or a fluid-gas mixture. For example, the conditioning medium may be DI or a slurry. Also, the temperature controller may be provided to provide the control medium to the entire polishing pad, or may be provided to locally provide the control medium only at a portion of the polishing pad where the temperature is different from the surrounding temperature.

According to one aspect, the temperature regulating unit may include at least one or more jetting units. For example, the injection unit may be formed in any one of a nozzle, a slit, and a hole. Further, the jetting portion may have a slit shape, and the jetting portion may be formed to provide an adjusting medium at an angle to the surface of the polishing pad.

According to one aspect, the temperature regulating portion may be arranged along the periphery of the substrate with a plurality of jetting portions. In addition, the temperature controller may be provided to provide a conditioning medium at a position adjacent to a position where the substrate is polished. Further, the temperature regulating portion may be disposed such that the jetting portion is inclined with respect to the surface of the polishing pad. In addition, the temperature controller may be inclined such that the direction in which the control medium is ejected coincides with the rotation direction of the polishing pad. The temperature regulator may be arranged such that the direction in which the control medium is ejected is injected in one tangential direction with respect to the rotation direction of the polishing pad. The temperature control unit may further include a scattering prevention unit disposed on a side opposite to a direction in which the control medium is ejected to prevent the control medium from being scattered.

According to one aspect of the present invention, there is provided a flatness measuring unit for measuring a polishing profile of the substrate, wherein the temperature adjusting unit adjusts the condition of the supply amount of the conditioning medium, the supply time and the supply flow rate according to a measurement result of the flatness measuring unit Lt; / RTI > In addition, the temperature controller may change the providing position of the control medium according to the measurement result of the flatness measuring unit.

According to one aspect of the present invention, there is provided a temperature measuring unit for measuring the temperature of the polishing pad, wherein the temperature adjusting unit adjusts the temperature of the polishing pad according to the temperature measured by the temperature measuring unit, Lt; / RTI > Also, the temperature controller may change the providing position of the control medium according to the measurement result of the temperature measuring unit.

According to one aspect, the temperature regulating section may provide the conditioning medium during polishing or after polishing of the substrate.

Various embodiments of the present invention may have one or more of the following effects.

As described above, according to the embodiments of the present invention, the polishing pad can be provided with a predetermined control medium to control the temperature of the polishing pad and the temperature of the substrate. In addition, the polishing rate, the polishing rate, and the flatness of the substrate can be controlled by adjusting the temperature of the polishing pad and keeping it constant.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing a chemical mechanical polishing apparatus and an arrangement structure for carrying out a cleaning process according to an embodiment of the present invention; FIG.
Fig. 2 is a plan view showing the arrangement structure of the substrate polishing apparatus of Fig. 1. Fig.
3 is a schematic view of the substrate polishing apparatus of FIG.
4 and 5 are plan views for explaining the temperature control unit in the substrate polishing apparatus of FIG.
6 is a block diagram for explaining the operation of the temperature controller according to an embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the difference that the embodiments of the present invention are not conclusive.

In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

Hereinafter, the method of controlling the temperature of the chemical mechanical polishing apparatus 1 and the polishing pad PP according to the embodiments of the present invention will be described in detail with reference to the drawings. 1 is a plan view showing a chemical mechanical polishing apparatus 1 according to an embodiment of the present invention and a layout structure for performing a cleaning process. FIG. 2 is a plan view showing the arrangement structure of the substrate polishing apparatus 1 of FIG. 1, and FIG. 3 is a schematic view of the substrate polishing apparatus 1 of FIG. 4 and 5 are plan views for explaining the temperature control unit 100 in the substrate polishing apparatus 1 of FIG. 6 is a block diagram for explaining the operation of the temperature controller 100 according to an embodiment of the present invention.

1 and 2, a chemical mechanical polishing apparatus 1 according to an embodiment of the present invention includes a substrate carrier C that moves in a state holding a substrate W, A first guide rail G1 which is arranged to pass through the first polishing table P1 and the second polishing table P2 so that the substrate carrier C is movable and a second guide rail G1 which is arranged so that the third and fourth polishing tables P3, A second guide rail G2 arranged to allow the substrate carrier C to move and a second guide rail G2 arranged between the first guide rail G1 and the second guide rail G2, And a second position S4 'spaced apart from one end of the second guide rail G2 at a first position S4 spaced apart from one end of the first guide rail G1 And a third position S1 spaced from the other end of the first guide rail G1 and a fourth position S1 'spaced apart from the other end of the second guide rail G2 The second year A first carrier holder H1 and a second carrier holder H2 capable of receiving the substrate carrier C while moving along the first connection rail CR1 and a second carrier holder H2 And a third carrier holder H3 and a fourth carrier holder H4 that can receive the substrate carrier C while moving along the first carrier holder H3.

The substrate carrier C moves independently in the guide rails G1, G2 and G3 and is accommodated in the carrier holders H1, H2, H3 and H4 in the connection rails CR1 and CR2 And is moved by the movement of the carrier holder (H). A rectangular shape formed by a plurality of vertical lines in the arrangement diagrams of Figs. 1 and 2 is a simplified representation of the substrate carrier C.

The first guide rail G1 is disposed so that the substrate W held by the substrate carrier C can be chemically mechanically polished in the first polishing table P1 and the second polishing table P2. Similarly, the second guide rail G2 is disposed so that the substrate W held by the substrate carrier C can be subjected to a chemical mechanical polishing process in the third polishing table P3 and the fourth polishing table P4, respectively do. A polishing platen is not disposed on the third guide rail G3, and a path through which the substrate carrier C moves is formed. In order to move from the ends S1 and S4 of the connecting rail CR to the other ends S1 'and S4', the carrier holder H can be moved at one time because two carrier holders H are disposed on the connecting rail CR. The substrate carrier C serves as a temporary storage unit TS for exchanging the carrier holder H at any position where the third guide rail G3 is arranged.

The connecting rails CR are spaced apart from the guide rails G and may be disposed with a difference in height between the up and down directions.

The carrier holder H includes a holder rail HR for receiving the substrate carrier C and accommodates a substrate carrier C moving along the guide rail G regardless of the arrangement of the connecting rails CR . Two carrier holders H are arranged for each connection rail CR. A first carrier holder H1 and a second carrier holder H2 may be provided for the first connection rail CR1 and may move along the first connection rail CR1. A third carrier holder H3 and a fourth carrier holder H4 are provided for the second connection rail CR2 and can move along the second connection rail CR2.

The first carrier holder H1 can receive the substrate carrier C positioned in any one of the first guide rail G1 and the third guide rail G3 and can hold the substrate carrier C in a state of accommodating the substrate carrier C The first and second guide rails G1 and G3 are reciprocatable along the first connecting rail CR1 and reciprocate along the first connecting rail CR1 so that the substrate carrier C accommodated in the first and second guide rails G1 and G3 Move to a position where you can move to either one. Similarly, the second carrier holder H2 may receive the substrate carrier C located in either the third guide rail G3 or the second guide rail G2, and may receive the substrate carrier C The substrate carrier C reciprocatingly moved along the first connection rail CR1 is reciprocated along the first connection rail CR1 while being supported by the third guide rail G3 and the second guide rail CR1, (G2). ≪ / RTI > The third carrier holder H3 can accommodate the substrate carrier C positioned in any one of the first guide rail G1 and the third guide rail G3 and can hold the substrate carrier C in a state The substrate carrier C reciprocating along the second connecting rail CR2 is reciprocally moved along the second connecting rail CR2 to the first guide rail G1 and the third guide rail G3 To a position where it can be moved to any one of them. Similarly, the fourth carrier holder H4 may receive the substrate carrier C located in either the third guide rail G3 or the second guide rail G2, and may receive the substrate carrier C The substrate carrier C reciprocatingly moved along the second connection rail CR2 is reciprocable along the second connection rail CR2 while being supported by the third guide rail G3 and the second guide rail CR2, (G2). ≪ / RTI >

The substrate carrier C is moved along the second connection rail CR2 while being accommodated in the third carrier holder H3 or the fourth carrier holder H4 so that a new substrate W to be subjected to the chemical- Is supplied from the loading unit (20). The loading unit 20, the preliminary cleaning device 30 and the unloading unit 10 are respectively disposed in the moving regions of the third carrier holder H3 and the fourth carrier holder H4.

The substrate W having undergone the chemical mechanical polishing process is preliminarily cleaned in the preliminary cleaner 30 and the preliminarily cleaned substrate W is inverted by 180 DEG in the unloading unit 10 To the cleaning units C1, C2 (C1 ', C2'). The preliminary cleaning apparatus 30 is provided with a cleaning nozzle for spraying a cleaning liquid at a high water pressure on the polishing surface of the substrate W mounted on the substrate carrier C, So as to remove large foreign substances such as slurry and abrasive particles on the polished surface of the substrate W. Then, the foreign material is removed from the polishing surface of the substrate W by the preliminary cleaning apparatus 30, so that the reversing unit 10 in the unloading unit 10 in which the substrate carrier C moves next moves the substrate W to the substrate carrier C, the substrate W can be prevented from being contaminated by the arm of the inverter in the process of turning the polishing surface SW upside down by 180 °.

An embodiment for carrying out the chemical mechanical polishing process of the substrate W using the chemical mechanical polishing apparatus 1 according to the embodiment of the present invention constituted as described above will be described in detail.

When a new first substrate W1 and a second substrate W are supplied to the two loading units 20 respectively, the first substrate W1 is mounted on the substrate carrier C of the third carrier holder H3 And the second substrate W2 is mounted on the substrate carrier C of the fourth carrier holder H4.

Next, the third carrier holder H3 and the fourth carrier holder H4 move to the third position S1 and the fourth position S1 ', respectively, and then the third carrier holder H3 and the fourth carrier holder H4 move from the third carrier holder H3 to the substrate holder The carrier C moves to the first guide rail G1 and the substrate carrier C moves from the fourth carrier holder H4 to the third guide rail G3. Here, the substrate carrier C moving along the first guide rail G1 is subjected to a first chemical mechanical polishing process on the first substrate W1 on the first polishing surface P1, and the first chemical mechanical polishing A second chemical mechanical polishing process for the first substrate W1 is performed on the second polishing table P2 by moving along the first guide rail G1 again.

The substrate carrier C is then moved from the S3 position to the first carrier holder H1 moving along the first connection rail CR1 so that the first carrier holder H1 moves along the first connection rail CR1 Moves to the S6 position of the third guide rail G3 again in the first branching position S5 and moves along the third guide rail G3 and then moves in the second branching position S7 After being transferred to the third carrier holder (H1), it moves to the preliminary cleaning device (30). That is, the two-step chemical mechanical polishing process is performed while moving along the path shown in the drawing.

Thereafter, the polished surface of the first substrate W1 subjected to the chemical mechanical polishing process of the second step is cleaned, transferred to the unloading unit 10 and transferred to the reverser, and then transferred to the main cleaning process do.

Similarly, the substrate carrier C moving along the second guide rail G2 performs a first chemical mechanical polishing process on the second substrate W2 on the fourth polishing surface plate P4, After finishing the polishing process, the wafer W is moved along the second guide rail G2 again (S2) to perform a second chemical mechanical polishing process on the second substrate W2 on the third polishing table P3.

Subsequently, the substrate carrier C is transferred from the S3 position to the second carrier holder H2, which moves along the first connecting rail CR1, and the second carrier holder H2 is moved along the first connecting rail CR1 Moves from the position S7 to the third carrier holder H1 after moving from the position S5 to the position S6 of the third guide rail G3 and moving along the third guide rail G3, Thereafter, it moves to the preliminary washing device 30. That is, the two-step chemical mechanical polishing process is performed while moving along the indicated path.

Next, the polished surface of the second substrate W2 subjected to the two-step chemical mechanical polishing process is cleaned, transferred to the unloading unit 10 and transferred to the inverter 50, And transferred to the cleaning process.

As described above, the two-step chemical mechanical polishing process for the two different substrates W1 and W2 can be performed at the same time by using the chemical mechanical polishing apparatus 1 configured as described above.

3 to 5, a polishing pad PP made of a polytecontact for abrading the substrate W is attached to the surface of the polishing table P. The polishing pad PP is attached to the surface of the polishing table P, As shown in Fig. The substrate W is polished as the substrate carrier C and the polishing platen P rotate at a predetermined speed in a state where the substrate W is in contact with the polishing pad PP.

On the other hand, the temperature of the surface of the polishing pad PP is increased due to the frictional heat generated between the substrate W and the polishing pad PP while the substrate W is being polished. When the temperature is raised during polishing, the chemical action of the slurry is increased, so that it is affected by the polishing profile of the substrate W. Therefore, the polishing result of the substrate W can be controlled by maintaining and regulating the temperature of the substrate W and the polishing pad PP constantly, and the polishing rate and the polishing rate can be improved.

In this embodiment, a temperature regulator 100 is provided on the polishing pad PP to regulate the temperature of the polishing pad PP to provide a predetermined regulating medium for regulating the temperature of the polishing pad PP. The temperature regulator 100 provides a regulating medium consisting of a liquid or a gas or a fluid in which a liquid and a gas are mixed. In addition, the temperature controller 100 provides a conditioning medium at a predetermined temperature for adjusting the temperature of the polishing pad PP. The temperature regulating portion 100 is for regulating the temperature of the polishing pad PP and includes both cooling the polishing pad PP and heating the polishing pad PP. For example, DI or slurry at a predetermined temperature may be used as the regulating medium. Here, when the slurry is used as the control medium in the temperature controller 100, since the slurry is provided at a temperature lower than the temperature of the polishing pad PP, the temperature of the polishing pad PP is cooled, PP) is not changed or diluted so that the polishing environment can be kept constant.

The temperature adjusting unit 100 includes at least one jetting unit 101, and the jetting unit 101 may have a shape such as a nozzle, a slit, or a hole. For example, the temperature regulating unit 100 may be arranged in the form of a plurality of nozzles, slits, or holes in a straight line, a curved line, or the like.

The temperature regulator 100 is provided to provide a regulating medium at a predetermined position of the polishing pad PP because more heat is generated at a position where the substrate W is polished during the polishing process, And may be provided around the substrate W. For example, the temperature regulating portion 100 is provided so as to provide a conditioning medium around a position at which the substrate W is polished.

Here, the temperature regulating part 100 may be provided to provide a conditioning medium over the polishing pad PP. Alternatively, the temperature regulating unit 100 may be provided to locally provide the regulating medium only at the portion of the polishing pad PP where the temperature is different from the surrounding region.

The temperature regulating part 100 is arranged such that the jetting part 101 is inclined at a predetermined angle with respect to the surface of the polishing pad PP so as to prevent the control medium supplied to the polishing pad PP from being scattered on the surface of the polishing pad PP do.

The temperature controller 100 is provided to provide the conditioning medium in a direction coinciding with the rotation direction of the polishing pad PP or the substrate W so as to effectively and uniformly adjust the temperature of the polishing pad PP. In addition, the temperature regulator 100 may be provided such that the direction in which the control medium is ejected is injected in a predetermined tangential direction with respect to the rotation direction of the polishing pad PP.

The temperature control unit 100 may include a scattering prevention unit (not shown) on the opposite side of the direction in which the control medium is ejected to prevent the control medium from being scattered.

In addition, the temperature controller 100 is provided to provide a conditioning medium around the substrate W. For example, the temperature regulating unit 100 may have a predetermined linear shape provided around the substrate W. Further, the temperature regulating unit 100 may be arranged parallel to the outer circumferential edge of the substrate W or at a predetermined angle. Alternatively, the temperature regulating portion 100 may have a curved shape along the periphery of the substrate W. [

On the other hand, a temperature measuring unit 102 for measuring the temperature of the polishing pad PP is provided at one side of the polishing pad PP, and the temperature adjusting unit 100 polishes It is possible to control providing the conditioning medium to the pad PP. For example, the temperature controller 100 may adjust the temperature of the polishing pad PP by adjusting the supply amount of the conditioning medium, the supply time, or the supply flow rate according to the result measured by the temperature measuring unit 102. Alternatively, the temperature controller 100 may adjust the supply position of the conditioning medium to move the polishing pad PP to a position where the temperature of the polishing pad PP needs to be adjusted according to the measurement result of the temperature measuring unit 102, It is also possible. Here, the temperature measuring unit 102 may be a temperature sensor provided on one side of the polishing pad PP or the polishing platen P. Or the temperature measuring unit 102 may be a camera for photographing the surface of the polishing pad PP.

The flatness measuring unit 103 for measuring the polishing profile of the substrate W is provided at one side of the substrate polishing apparatus 1 and the temperature adjusting unit 100 is provided for measuring the polishing profile of the substrate W The supply amount and the supply time of the regulating medium and the supply flow rate can be adjusted according to the flow rate.

The substrate polishing apparatus 1 includes a conditioner (not shown) that allows the surface of the polishing pad PP to be vertically pressed at a predetermined pressure to finely cut so that the pores formed on the surface of the polishing pad PP come out on the surface . Here, the conditioner (not shown) finely cuts the surface of the polishing pad PP so as not to block a large number of foamed pores serving as a slurry in which a slurry containing a mixture of an abrasive and a chemical is coated on the surface of the polishing pad PP, So that the slurry filled in the foam pores of the pad PP is smoothly supplied to the substrate W gripped by the substrate carrier C. [ The conditioner (not shown) includes a rotation shaft (not shown) connected to the holder holding the conditioning disk (not shown) contacting the polishing pad PP during the conditioning process and rotating the conditioning disk And a cylinder for pressurizing the cylinder. As the conditioner is rotated and sweeped in contact with the surface of the polishing pad (PP), microcutting of the foam pores is performed over a large area of the polishing pad (PP).

The temperature controller 100 according to the present embodiment may be provided around the conditioner to adjust the temperature of the polishing pad PP by providing a conditioning medium when conditioning the polishing pad PP in the conditioner.

Hereinafter, the operation of the temperature controller 100 according to the embodiments of the present invention will be described.

The substrate polishing apparatus 1 measures the temperature of the polishing pad PP while polishing the substrate W and adjusts the temperature of the polishing pad PP in the temperature regulating part 100 to adjust the temperature of the polishing pad PP. To provide a conditioning medium at a predetermined temperature. Further, the control medium may be any one of a gas, a liquid, or a fluid in which a gas and a liquid are mixed. For example, the temperature regulator 100 may provide DI or slurry at a predetermined temperature.

The temperature controller 100 adjusts the temperature of the polishing pad PP by adjusting at least one of a supply flow speed, a supply amount, and a supply time of the control medium. For example, in the step of providing the control medium, the position of the control medium is changed according to the temperature of the polishing pad PP, or the polishing pad PP is controlled by adjusting the supply amount, Thereby controlling the temperature of the liquid.

Or the flatness degree measuring section 103 for measuring the polishing profile of the substrate W is provided unlike the above embodiment and the temperature adjusting section 100 is provided in accordance with the result measured by the flatness measuring section 103 A conditioning medium can be provided. Here, since the polishing profile of the substrate W is affected by the polishing temperature, the polishing profile of the substrate W can be uniformly maintained by adjusting the temperature of the polishing pad PP.

The substrate polishing apparatus 1 is provided with an input section 104 capable of inputting a target temperature of the polishing pad PP and a temperature adjusting section 100 is provided on the polishing pad PP) can also be provided. Here, after the control medium is supplied to the polishing pad PP, the temperature of the polishing pad PP is measured again after a predetermined time has elapsed, and it is determined whether the temperature of the re-measured polishing pad PP has reached the target temperature . Further, if the temperature of the re-measured polishing pad PP does not reach the target temperature, it is possible to further provide the conditioning medium to the polishing pad PP. Then, the temperature of the polishing pad PP is measured again and the step of providing the conditioning medium is repeatedly performed to maintain the temperature of the polishing pad PP at a predetermined target temperature.

The temperature regulator 100 provides the conditioning medium at an angle to the surface of the polishing pad PP at an angle. Further, the temperature regulating unit 100 ejects the regulating medium in the same direction as the rotation direction of the substrate W or the polishing pad PP. Here, the same direction as the rotation direction means that the provided control medium is provided in a direction approximately coinciding with the rotation direction of the polishing pad PP. Also, the temperature controller 100 may provide a control medium in a predetermined tangential direction with respect to the rotation direction of the polishing pad PP.

According to these embodiments, by providing the conditioning medium of the predetermined temperature to the polishing pad PP, the temperature of the polishing pad PP can be adjusted to increase the polishing rate and improve the flatness of the substrate W. [ Further, the temperature regulating section 100 can accurately and quickly control the temperature of the polishing pad PP by providing the conditioning medium to the polishing pad PP.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

1: substrate polishing apparatus
10: Loading unit
20: unloading unit
30: Spare cleaner
100:
101:
C: substrate carrier
CR: Connection rail
D: Docking unit
G: Guide rail
H: Carrier holder
P: abrasive plate
PP: Polishing pad
W: substrate

Claims (16)

In the substrate polishing apparatus,
An abrasive plate having a polishing pad for polishing a substrate;
A substrate carrier for holding the substrate to be in contact with the polishing pad; And
A temperature controller provided on the polishing pad to provide a conditioning medium for adjusting the temperature of the polishing pad;
And a polishing pad.
The method according to claim 1,
Wherein the conditioning medium provides any one of a liquid or a gas or a fluid in which a liquid and a gas are mixed.
3. The method of claim 2,
Wherein the conditioning medium provides DI or slurry.
The method according to claim 1,
Wherein the temperature controller is provided to provide the control medium to the entire polishing pad or to provide the control medium locally only at a portion of the polishing pad where the temperature is different from the surrounding temperature.
5. The method of claim 4,
Wherein the temperature regulating portion includes at least one or more ejecting portions, and the ejecting portion is formed in the form of a nozzle, a slit, or a hole.
6. The method of claim 5,
Wherein the jetting portion has a slit shape,
Wherein the ejection portion is configured to provide an adjustment medium at an angle to the surface of the polishing pad.
6. The method of claim 5,
Wherein the temperature regulating portion is disposed along the periphery of the substrate.
6. The method of claim 5,
Wherein the temperature regulating portion is disposed such that the ejecting portion is inclined with respect to the surface of the polishing pad.
9. The method of claim 8,
Wherein the temperature regulating portion is inclined so that a direction in which the control medium is ejected coincides with a rotation direction of the polishing pad.
10. The method of claim 9,
Wherein the temperature regulating unit is arranged such that a direction in which the control medium is ejected is projected in one tangential direction with respect to a rotation direction of the polishing pad.
10. The method of claim 9,
Wherein the temperature control unit further includes a scattering prevention unit disposed on a side opposite to a direction in which the control medium is ejected to prevent the control medium from being scattered.
The method according to claim 1,
A flatness measuring unit for measuring a polishing profile of the substrate,
Wherein the temperature controller adjusts the condition of one of the supply amount, the supply time, and the supply flow rate of the conditioning medium according to the measurement result of the flatness measuring unit.
13. The method of claim 12,
Wherein the temperature regulating unit changes the providing position of the regulating medium according to a measurement result of the flatness measuring unit.
The method according to claim 1,
And a temperature measuring unit for measuring the temperature of the polishing pad,
Wherein the temperature controller adjusts the condition of one of the supply amount, the supply time, and the supply flow rate of the conditioning medium according to the temperature measured by the temperature measuring unit.
15. The method of claim 14,
Wherein the temperature regulating unit changes the providing position of the regulating medium according to the measurement result of the temperature measuring unit.
The method according to claim 1,
Wherein the temperature regulator provides the conditioning medium during or after polishing of the substrate.

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