KR20160132246A - Sputtering Device Controlling residual stress of substrate - Google Patents

Sputtering Device Controlling residual stress of substrate Download PDF

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Publication number
KR20160132246A
KR20160132246A KR1020150064341A KR20150064341A KR20160132246A KR 20160132246 A KR20160132246 A KR 20160132246A KR 1020150064341 A KR1020150064341 A KR 1020150064341A KR 20150064341 A KR20150064341 A KR 20150064341A KR 20160132246 A KR20160132246 A KR 20160132246A
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floating
mask
shield
hole
flat substrate
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KR1020150064341A
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Korean (ko)
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KR101703219B1 (en
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유환규
최재문
최유화
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(주)이루자
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H01L21/203—

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention provides a plasma processing apparatus including a chamber part including a chamber housing and providing a space in which a sputtering process is performed, a sputtering target part including a sputtering target, a substrate supporting part supporting the flat substrate on which the thin film is deposited, And a masking portion for masking an outer side of the flat substrate, wherein the masking portion is located on an upper side of the flat substrate and has a mask hole having a size corresponding to the thin film region of the flat substrate, And a ground shield which is electrically insulated from the floating mask and is located above the floating mask and has a shield hole having an area larger than that of the mask hole, And an inclined surface Is formed from the ground shield discloses a sputtering apparatus which is formed so as to expose a predetermined exposure width floating the top surface of the floating shield mask through the hole from the inner surface of the floating mask.

Description

[0001] The present invention relates to a sputtering device for controlling residual stress of a substrate,

The present invention relates to a sputtering apparatus for controlling the residual stress of a substrate.

Sputtering is a main method for depositing a thin film on a flat substrate such as a glass substrate constituting a flat panel display device such as a liquid crystal display or an organic light-emitting diode device.

1, a conventional sputtering apparatus generally includes a sputtering target, a magnet positioned behind the sputtering target, a floating mask for masking the outer end of the flat substrate from the upper surface of the flat substrate, And a ground shield. In the sputtering apparatus, a magnet located at the rear of the sputtering target is activated, power is applied to the sputtering target, and the sputtering target is sputtered while the plasma discharge progresses to deposit a thin film on the surface of the substrate.

The floating mask is formed such that the inner surface of the mask hole is inclined so that the target material smoothly flows into the thin film forming region of the flat substrate. Also, the ground shield is also formed such that the inner surface of the shield hole is inclined, and the bottom edge of the inner surface is positioned on the same vertical plane as the top edge of the inner surface of the mask hole. The sputtering proceeds in a state where the ground shield and the planar substrate are grounded and the floating mask is floated. In the region facing the floating mask, the plasma density is relatively increased, and the distribution of relatively large positive charges is increased.

In addition, the thin film of the flat substrate has a difference in deposition density between the outer side of the flat substrate and the thin film formed at the central portion. This phenomenon is due to the fact that relatively large negative charges are distributed on the outer side of the substrate during the sputtering process, and a high energy positive charge collides against the thin film to increase the deposition density of the thin film. The compressive stress is generated in the outer side of the flat substrate, and warping may occur. Particularly, as the area of the flat substrate is increased or the thickness thereof is thinner, there arises a problem that the warping phenomenon is increased due to the difference in the deposition density between the center portion and the outer portion.

Conventionally, the sputtering apparatus uses a method of changing the structure or driving method of the magnet in order to reduce the difference in the deposition density between the central portion and the outer portion of the flat substrate. However, additional design changes are required and the variation of the deposition density is reduced There is a limit to the effect.

The present invention provides a sputtering apparatus capable of reducing a difference in deposition density between a central portion and a lateral portion of a thin film deposited on a flat substrate, thereby reducing a residual stress deviation of the flat substrate.

A sputtering apparatus for controlling a residual stress of a substrate according to an embodiment of the present invention includes a chamber part including a chamber housing and providing a space in which a sputtering process is performed, a sputtering target part including a sputtering target, And a masking portion for supporting a flat substrate, which faces the sputtering target, and a masking portion for masking an outer side portion of the flat substrate, wherein the masking portion is located on the upper side of the flat substrate and corresponds to a thin film region of the flat substrate And a shielding hole located above the floating mask and electrically insulated from the floating mask, the shielding hole having an area larger than that of the masking hole. And the floating mask includes a ground shield And the ground shield is formed so as to expose the upper surface of the floating mask through the shield hole at a predetermined floating exposure width from the inner surface of the floating mask .

Further, the floating mask is formed such that the upper edge of the inner side is located on the outer side of the lower edge, and the ground shield is formed such that the lower edge of the inner side is spaced from the upper edge of the inner surface of the floating mask by the floating exposure width . At this time, the floating exposure width may be 0.5 to 5.0 times the slant width (CW) of the inner surface of the floating mask.

In addition, the ground shield may be formed such that an inner surface of the shield hole is movable outward. In this case, the ground shield may further include a coupling hole extending between the shield hole and the outer side in the outward direction. The masking portion may include a shield fixing plate having a fixing groove and supporting the ground shield, And a shield moving unit including a shield fixing screw coupled to the groove.

The sputtering apparatus for controlling the residual stress of the substrate of the present invention controls the difference in the deposition density between the center and the outer side in the thin film deposited on the flat substrate to control the residual stress deviation of the center and outer sides of the thin film, .

Further, the sputtering apparatus for controlling the residual stress of the substrate of the present invention improves the warping of the flat substrate when the metal thin film is formed by sputtering of the metal sputtering target, and the thin film is peeled There is an effect of reducing the amount of water.

Further, the sputtering apparatus for controlling the residual stress of the substrate of the present invention has the effect of preventing the adhesion force at the thin film interface from being reduced when the thin film is deposited in multiple layers.

1 is a vertical sectional view of a conventional sputtering apparatus.
2 is a vertical cross-sectional view of a sputtering apparatus for controlling the residual stress of a substrate according to an embodiment of the present invention.
3 is an enlarged view of "A" in FIG.
4 is a graph illustrating changes in residual stress of a flat substrate by a sputtering apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, a sputtering apparatus for controlling the residual stress of a substrate according to an embodiment of the present invention will be described.

2 is a vertical cross-sectional view of a sputtering apparatus for controlling the residual stress of a substrate according to an embodiment of the present invention. 3 is an enlarged view of "A" in FIG.

2 and 3, a sputtering apparatus 100 according to an embodiment of the present invention includes a chamber 110, a sputtering target portion 120, a substrate support 130, and a masking portion 140 .

The sputtering apparatus 100 forms a thin film by depositing a sputtering target particle sputtered by a sputtering target portion 120 on a top surface of a flat substrate 10 which is seated on a substrate supporting portion 130 by a sputtering process. The sputtering apparatus 100 maintains the inside of the chamber 110 in a vacuum state and applies power to the sputtering target portion 120, the substrate supporting portion 130 and the masking portion 140. The substrate supporting portion 130 and the sputtering Argon gas is supplied between the target portions 120 to advance the plasma discharge.

The sputtering apparatus 100 reduces the difference in deposition density between the central portion and the outermost portion of the thin film deposited on the flat substrate 10, thereby reducing the residual stress deviation of the central portion and the outermost portion of the thin film and reducing the warping of the flat substrate 10 . When the metal thin film is formed by sputtering of the metal sputtering target, the sputtering apparatus 100 improves the bending phenomenon of the flat substrate 10, thereby reducing the peeling of the thin film due to a phenomenon such as buckling or wrinkling of the thin film . In addition, the sputtering apparatus 100 reduces the peeling between the thin films when the thin film is deposited in multiple layers, thereby preventing the adhesion at the thin film interface from being reduced.

The flat substrate 10 may be a glass substrate used in a flat panel display device. The flat substrate 10 may be divided into a thin film region at the center where the thin film is formed and a non-thin film region at the outer side where the thin film is not formed. The non-thin film region is masked by the masking portion 140 so that a thin film is not formed in the sputtering process.

The chamber part 110 includes a chamber housing 111 formed in an inner hollow box shape and a sputtering target part 120, a substrate supporting part 130 and a masking part 140 are mounted. In the chamber part 110, the sputtering target part 120 and the substrate supporting part 130 are positioned in the horizontal direction. The chamber unit 110 includes a process gas supply port 112 for injecting a process gas containing argon gas required for plasma formation into the chamber housing 111 and a process gas discharge port 113 for discharging the process gas. As shown in FIG. The inside of the chamber housing 111 is kept vacuum, and a sputtering process is performed. The chamber part 110 may be formed as a chamber part of a general sputtering device. Meanwhile, the chamber 110 may be formed such that the sputtering target portion 120 and the substrate supporting portion are positioned in the vertical direction.

The sputtering target portion 120 includes a target unit 121 and a magnet unit 125. The sputtering target portion 120 is positioned above the chamber unit 110 and the magnet unit 125 is positioned above the target unit 121. [ The sputtering target portion 120 may be formed to have the same or similar structure as that of a general sputtering target used in a sputtering apparatus for sputtering a flat substrate 10.

The target unit 121 includes a sputtering target 122 and a target support plate 123. The target unit 121 is formed in a plate shape having an area larger than that of the flat substrate 10 to be sputtered. The target unit 121 may be a general planar target unit used in a sputtering apparatus.

The sputtering target 122 is formed in a plate shape having an area larger than the area of the plate substrate 10, and one plate or a plurality of plates may be assembled. The sputtering target 122 is formed of a thin film material to be formed on the surface of the flat substrate 10. The sputtering target 122 is installed so that its front surface is opposed to the substrate supporting part 130. Here, the front surface means the surface of the sputtering target 122 where sputtering is performed in the sputtering process.

The target support plate 123 is formed in a plate shape and contacts the rear surface of the sputtering target 122 to support the sputtering target 122. The target support plate 123 may be formed in the same number as the sputtering target 122 when the sputtering target 122 is formed of a plurality of flat plates. The target support plate 123 is supplied with a negative voltage by a separate power source.

The magnet unit 125 is made of a permanent magnet or an electromagnet, and is divided into a plurality of parts and is positioned above the sputtering target 122. Further, the magnet unit 125 is formed to move from one side of the sputtering target 122 to the other side by another moving means (not shown). The magnet unit 125 improves the sputtering efficiency by forming a magnetic field in a region including the surface of the sputtering target 122 in the sputtering process.

The substrate supporting part 130 includes a substrate supporting plate 131 on which the flat substrate 10 is mounted. The substrate supporting part 130 supports and fixes the flat substrate 10 mounted on the upper surface of the substrate supporting plate 131. The substrate support 130 supports the flat substrate 10 using a separate substrate support clamp, although not shown in detail. In addition, the substrate supporter 130 may further include an ejector pin (not shown) for raising or lowering the flat substrate. Meanwhile, the substrate supporting part 130 may be a general substrate supporting part used in a sputtering apparatus.

The substrate support plate 131 is formed in a plate shape and has an area larger than an area of the flat substrate 10 on which the substrate support plate 131 is mounted. The substrate support plate 131 is grounded. Although not shown in detail, the substrate support plate 131 may include an eject hole (not shown) through which an eject pin (not shown) for vertically lifting the flat substrate 10 passes, a vacuum hole (not shown) Can be formed. The substrate support plate 131 may further include a temperature control module (not shown) for heating or cooling the flat substrate 10.

The masking unit 140 includes a floating mask 141, a ground shield 142, and an insulating plate 143. The masking unit 140 may further include a shield moving unit 144. The masking part 140 is located on the top of the flat substrate 10 and masks the non-thin film area on the outer side of the flat substrate 10. The masking part 140 controls the plasma distribution in the region between the flat substrate 10 and the sputtering target part 120 so that the thin film is uniformly deposited on the flat substrate 10. The masking unit 140 is formed so that the shielding unit 142 can adjust the width of masking the top surface of the floating mask 141 by the shield moving unit 144.

The floating mask 141 is formed as a square ring-shaped frame having a mask hole 141a formed therein. The floating mask 141 is preferably formed such that the upper surface 141b and the lower surface 141c are entirely planar. The floating mask 141 is spaced apart from the upper surface of the flat substrate 10 by a predetermined distance. The floating mask 141 masks the non-thin film region of the flat substrate 10.

The floating mask 141 is formed as an inclined surface whose inner side 141d by the mask hole 141a is inclined outward along the upward direction. That is, the inner side surface 141d is positioned on the outer side of the upper edge 141e than the lower edge 141f. The floating mask 141 is exposed to the plasma region with the inner side surface 141d inclined. The floating mask 141 has the upper surface 141b exposed to the plasma region with a predetermined floating exposure width (W). In the floating mask 141, positive charges are distributed on the inner surface 141d and the upper surface 141b, which are exposed to the plasma in the sputtering process. Since the floating mask 141 exposes the upper surface with the floating exposure width W and a positive charge is distributed to the upper surface 141b, a larger amount of positive charge is distributed compared with the conventional one.

The mask hole 141a is formed to have an area corresponding to a thin film region in which a thin film is formed in the flat substrate 10. [ The floating mask 141 masks the non-thin film region of the flat substrate 10 to prevent the thin film from being deposited on the non-thin film region of the flat substrate 10.

The floating mask 141 is electrically insulated from the substrate support plate 131 and the ground shield 142. The floating mask 141 is not connected to the ground but is floated and a floating potential is applied. Accordingly, the floating mask 141 is floated to attract electrons in the plasma region, thereby expanding the edge portion having a thick distribution in the plasma region to the outside. The floating mask 141 is formed of a conductive metal such as aluminum or a nickel alloy.

The ground shield 142 is formed as a rectangular ring-shaped frame having a shield hole 142a formed therein. The ground shield 142 is preferably formed such that the upper surface 142b and the lower surface 142c are entirely planar. Also, the ground shield 142 is formed as an inclined surface in which the inner side surface 142d formed by the shield hole 142a is inclined outward. The ground shield 142 is spaced apart from the top surface 141b of the floating mask 141 by a predetermined distance from the top of the floating mask 141. [

The shield hole 142a is formed to have a predetermined area so as to include the exposed area of the upper surface of the floating mask 141. [ The shield hole 142a is formed such that the inner side surface 142d is inclined outward so that the upper edge 142e is positioned outside the lower edge 142f. The ground shield 142 exposes the upper surface 141b of the floating mask 141 through the shield hole 142a from the upper edge 141e of the inner side surface 141d to the floating exposure width W. [ That is, the ground shield 142 masks the upper surface 141b of the floating mask 141 so that the upper surface 141b of the floating mask 141 is exposed with the floating exposure width W. The floating exposure width W is a horizontal distance between the upper edge 141e of the inner side surface 141d of the floating mask 141 and the lower edge 142f of the inner side surface 142d of the ground shield 142 . Since the floating mask 141 exposes the upper surface 141b together with the inner surface 141d, a relatively large area is exposed to the plasma as compared with the conventional floating mask. As described above, since the positive charge is distributed in the exposed region, the positive potential of the floating mask 141 is relatively larger than that of the conventional floating mask.

The floating exposure width W is determined to be 0.5 to 5.0 times the slant width CW of the inner surface 141d of the floating mask 141. [ The slanting width CW is a width along the inclined direction of the inner surface 141d and means a distance between the upper edge 141c and the lower edge 141f of the floating mask 141. If the floating exposure width W is too small, the positive charge distribution on the upper surface of the floating mask 141 is insufficient, and the speed at which the negative charge distributed on the outer side of the flat substrate 10 moves toward the floating mask 141 is lowered . Therefore, the amount of positive charge colliding with the outer side of the flat substrate 10 is not sufficiently reduced. In addition, if the floating exposure width W is too large, the plasma distribution on the upper surface of the flat substrate 10 becomes uneven and the thickness of the thin film becomes uneven.

The floating exposure width W may be adjusted according to the width of the non-uniform stress in the thin film formed on the upper surface of the flat substrate 10. The floating exposure width W can be increased if the thickness of the thin film is uneven, and the floating exposure width W can be reduced if the width of the stress is non-uniform.

Also, the ground shield 142 may be formed such that the inner side surface 142d of the shield hole 142a can move outward. That is, the ground shield 142 is moved and fixed by the shield moving unit 144 so that the floating exposure width can be changed. For this purpose, the ground shield 142 may be formed by combining a plurality of bar-shaped subground shields in a rectangular ring shape. When the ground shield 142 is formed of a plurality of subground shields, the ground shield 142 can be moved back and forth with respect to the center of the flat substrate 10. Therefore, the position of the ground shield 142 is adjusted so that the floating exposure width W of the floating mask 141 can be easily changed.

The ground shield 142 may further include a coupling hole 142g extending in an outward direction between the shield hole 142a and the outer side. The coupling hole 142g is coupled to the shield moving unit 144 so that the ground shield 142 can be moved and fixed. The coupling relationship between the coupling hole 142g and the shield moving unit 144 will be described in detail below.

The ground shield 142 is connected to the ground and is electrically insulated from the floating mask 141. The ground shield 142 is formed of a conductive metal such as aluminum or a nickel alloy. The ground shield 142 attracts electrons in the plasma region so that the plasma distribution is formed entirely on the upper surface of the flat substrate 10.

The insulating plate 143 is positioned between the floating mask 141 and the ground shield 142 and electrically isolates the floating mask 141 from the ground shield 142. The insulating plate 143 may be formed of one plate or a plurality of blocks. The insulating plate 143 is coupled to a position corresponding to the lower surface 142c of the ground shield 142 so as not to be exposed to the shield hole 142a of the ground shield 142. [

The shield moving unit 144 is formed to include a shield fixing plate 145 and a shield fixing screw 146. The shield moving unit 144 supports and moves and fixes the ground shield 142. Meanwhile, the shield moving unit 144 may be formed in various structures capable of supporting and moving the ground shield 142.

The shield fixing plate 145 is formed in a bar shape or a plate shape and contacts the lower surface 142c or the upper surface 142b of the ground shield 142 to support the ground shield 142. Further, the shield fixing plate 145 is coupled to the chamber part 110 or fixed by a separate fixing means (not shown).

The shield fixing plate 145 is further formed with a fixing groove 147. The fixing groove 147 is formed with a screw on an inner circumferential surface thereof, and a shield fixing screw 146 is engaged.

The shield fixing screw 146 is formed at a height greater than the thickness of the ground shield 142. The shield fixing screw 146 passes through the coupling hole 142g of the ground shield 142 and is coupled to the fixing groove 147. The shield fixing screw 146 is coupled to the fixing hole 147 and contacts the surface of the ground shield 142 to fix the ground shield 142. The shield fixing screw 146 is loosened from the fixing groove 147 and spaced apart from the surface of the ground shield 142 so that the ground shield 142 can be moved.

Hereinafter, the operation of the sputtering apparatus according to an embodiment of the present invention will be described.

A negative voltage is applied to the target unit 121 of the sputtering target portion 120 and the grounding shield 142 of the substrate supporting portion 130 and the masking portion 140 is connected to the ground. When plasma is generated between the flat substrate 10 and the sputtering target 122 while argon gas is supplied while the inside of the chamber 110 is held in vacuum, sputtering proceeds and sputtering from the sputtering target 122 is performed. The target particles are deposited on the upper surface of the flat substrate 10.

The ground shield 142 is connected to the ground so that the plasma distribution is more uniformly formed on the surface of the sputtering target 122, which is a portion corresponding to the upper surface of the flat substrate 10. Also, the floating mask 141 has a positive charge distributed on the inner surface 141d and the upper surface 141b exposed in the plasma region. Since the floating mask 141 has an increased area exposed to the plasma, a relatively large amount of positive electric charge is distributed to the inner surface 141d and the upper surface 141b of the floating mask 141. [ In addition, a relatively large amount of negative charge is distributed on the outer side of the upper surface of the flat substrate 10 than in the central portion. The negative charge moves in the direction of the floating mask 141 from the outer side of the flat substrate 10 by the attractive force between the upper surface 141b of the floating mask 141 and the positive charge existing on the inner surface 141d. At this time, since the amount of positive charges distributed on the upper surface 141b and the inner surface 141d of the floating mask 141 is large, the pulling force of the negative charge is increased and the negative charge is moved quickly. At the outer side of the flat substrate 10, the amount of negative charge is reduced, the potential is increased, and the collision of high energy positive charges is reduced. Therefore, the deposition density of the outer portion of the flat substrate 10 does not increase with respect to the central portion, and the compressive stress is reduced.

The residual stress evaluation result of the thin film using the sputtering apparatus according to an embodiment of the present invention will be described below.

4 is a graph showing changes in residual stress of a substrate by a sputtering apparatus according to an embodiment of the present invention.

In this evaluation, the floating display width W of the upper surface 141b of the floating mask 141 is twice the slant width CW of the inner surface 141d of the floating mask 141. The power applied under the sputtering condition for depositing a thin film on the upper surface of the flat substrate 10 and the internal pressure of the chamber 110 were set as shown in Table 1, respectively. In addition, in the same sputtering apparatus, the power and the internal pressure were made equal to each other, and a thin film was deposited under the condition that the upper surface 141b of the floating mask 141 was not exposed. The residual stress of the flat substrate 10 according to the examples and the comparative example was evaluated at the outer side of the flat substrate 10.

Power (kW) Pressure (mTorr) Comparative Example Example 4 1.4 50.7 Mpa 21.4 MPa 6 1.4 63.4 Mpa 40.7 Mpa 6 2.4 43.7 Mpa 21.4 MPa

Referring to FIG. 4, it can be seen that, in comparison with the comparative example, when the upper surface 141b of the floating mask 141 is exposed according to the embodiment of the present invention, the residual stress of the flat substrate 10 is reduced . Therefore, it can be confirmed that the sputtering apparatus according to the embodiment of the present invention reduces the residual stress at the outer side of the flat substrate 10.

The present invention is not limited to the above-described embodiment, but may be applied to a sputtering apparatus for controlling the residual stress of a flat substrate according to the present invention. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

100: Sputtering apparatus
110; Chamber section 120; The sputtering target portion
130; A substrate support 140; Masking portion

Claims (5)

A chamber part including a chamber housing and providing a space in which a sputtering process is performed; a sputtering target part including a sputtering target; a substrate supporting part for supporting the flat substrate on which the thin film is deposited and facing the sputtering target; And a masking portion for masking an outer portion of the masking portion,
The masking portion
A floating mask located on the top of the flat substrate and masking the non-thin film region of the flat substrate with a mask hole having a size corresponding to the thin film region of the flat substrate,
And a ground shield electrically insulated from the floating mask and having a shield hole located at an upper portion of the floating mask and having an area larger than that of the mask hole,
Wherein the floating mask is formed of an inclined surface whose inner surface of the mask hole faces outward toward the upper direction,
Wherein the ground shield is formed to expose an upper surface of the floating mask through a shield hole at a predetermined floating exposure width from an inner surface of the floating mask. The method according to claim 1,
Wherein the floating mask has an upper edge of the inner side located outside the lower edge,
Wherein the ground shield is formed such that the lower edge of the inner side is spaced from the upper edge of the inner surface of the floating mask by the floating exposure width. 3. The method according to claim 1 or 2,
Wherein the floating exposure width is determined to be 0.5 to 5.0 times as wide as the slant width (CW) of the inner surface of the floating mask. The method according to claim 1,
Wherein the ground shield is formed such that an inner surface of the shield hole is movable outward. 5. The method of claim 4,
Wherein the ground shield further includes a coupling hole extending between the shield hole and the outer side in an outward direction,
The masking portion
And a shield moving unit including a shield fixing plate having a fixing groove for supporting the ground shield and a shield fixing screw penetrating the coupling hole and being coupled to the fixing groove. Sputtering device.
KR1020150064341A 2015-05-08 2015-05-08 Sputtering Device Controlling residual stress of substrate KR101703219B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109913827A (en) * 2019-03-29 2019-06-21 太湖金张科技股份有限公司 A kind of sputtering process protective device and its application method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1060624A (en) * 1996-08-20 1998-03-03 Matsushita Electric Ind Co Ltd Sputtering device
JP2001335930A (en) * 2000-05-25 2001-12-07 Matsushita Electric Ind Co Ltd Thin film deposition system
KR20090009615A (en) * 2007-07-20 2009-01-23 엘지디스플레이 주식회사 The sputtering device
KR20110063058A (en) * 2009-12-04 2011-06-10 엘지디스플레이 주식회사 Sputtering apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1060624A (en) * 1996-08-20 1998-03-03 Matsushita Electric Ind Co Ltd Sputtering device
JP2001335930A (en) * 2000-05-25 2001-12-07 Matsushita Electric Ind Co Ltd Thin film deposition system
KR20090009615A (en) * 2007-07-20 2009-01-23 엘지디스플레이 주식회사 The sputtering device
KR20110063058A (en) * 2009-12-04 2011-06-10 엘지디스플레이 주식회사 Sputtering apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109913827A (en) * 2019-03-29 2019-06-21 太湖金张科技股份有限公司 A kind of sputtering process protective device and its application method

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