KR20110063058A - Sputtering apparatus - Google Patents

Sputtering apparatus Download PDF

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Publication number
KR20110063058A
KR20110063058A KR1020090119995A KR20090119995A KR20110063058A KR 20110063058 A KR20110063058 A KR 20110063058A KR 1020090119995 A KR1020090119995 A KR 1020090119995A KR 20090119995 A KR20090119995 A KR 20090119995A KR 20110063058 A KR20110063058 A KR 20110063058A
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KR
South Korea
Prior art keywords
substrate
floating shield
backing plate
shield
vacuum chamber
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KR1020090119995A
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Korean (ko)
Inventor
김성은
Original Assignee
엘지디스플레이 주식회사
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Priority to KR1020090119995A priority Critical patent/KR20110063058A/en
Publication of KR20110063058A publication Critical patent/KR20110063058A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention is to provide a prevention plate in the floating shield to prevent the plasma ion penetrates into the substrate carrier, vacuum chamber; A backing plate provided in the vacuum chamber and to which a voltage is applied; A target disposed in front of the backing plate; A susceptor on a lower portion of the backing plate in the vacuum chamber, the susceptor facing the backing plate and disposed on a front surface thereof; A substrate carrier for fixing the substrate; A floating shield disposed on a substrate edge region above the substrate to block plasma ions deposited on the substrate carrier; And at least one barrier plate formed on the floating shield to block plasma ions penetrating into the space between the floating shield and the substrate.

Sputtering, Vacuum Chamber, Backing Plate, Susceptor, Floating Shield, Prevent Plate

Description

Sputtering Device {SPUTTERING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly, to a sputtering apparatus capable of effectively preventing plasma ions from penetrating into a substrate carrier.

Recently, with the development of various portable electronic devices such as mobile phones, PDAs, and notebook computers, there is a growing demand for flat panel display devices for light and thin applications. Such flat panel displays are being actively researched, such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), FED (Field Emission Display), VFD (Vacuum Fluorescent Display), but mass production technology, ease of driving means, Liquid crystal display devices (LCDs) are in the spotlight for reasons of implementation.

A liquid crystal display device is a device that displays information on a screen by using refractive anisotropy. The liquid crystal display device displays a desired image by individually supplying data signals according to image information to a plurality of liquid crystal cells arranged in a matrix form, and adjusting a light transmittance of the liquid crystal cells. to be.

Accordingly, the liquid crystal display device includes a liquid crystal panel in which liquid crystal cells in pixel units are arranged in a matrix form, and a driver integrated circuit (IC) for driving the liquid crystal cell. The liquid crystal panel includes a color filter substrate and a thin film transistor array substrate facing each other, and a liquid crystal layer formed between the color filter substrate and the thin film transistor array substrate.

On the thin film transistor array substrate of the liquid crystal panel, a plurality of data lines for transmitting a data signal supplied from a data driver integrated circuit to a liquid crystal cell and a plurality of scan signals for transmitting a scan signal supplied from a gate driver integrated circuit to the liquid crystal cell. The gate lines of are orthogonal to each other, and a liquid crystal cell is defined at each intersection of these data lines and the gate lines. Common electrodes and pixel electrodes are formed on opposite inner surfaces of the color filter substrate and the thin film transistor array substrate to apply an electric field to the liquid crystal layer. In this case, the pixel electrode is formed for each liquid crystal cell on the thin film transistor array substrate, while the common electrode is integrally formed on the front surface of the color filter substrate. Therefore, by controlling the voltage applied to the pixel electrode in a state where a voltage is applied to the common electrode, it is possible to individually control the light transmittance of the liquid crystal cells. As described above, in order to control the voltage applied to the pixel electrode for each liquid crystal cell, a thin film transistor used as a switching element is formed in each liquid crystal cell.

Such a thin film transistor and various electrodes are made of a metal layer. Such a metal layer is typically formed by a sputtering method by a sputtering apparatus, which will be described below.

1 is a view showing a conventional sputtering apparatus.

As shown in FIG. 1, a conventional sputtering apparatus includes a vacuum chamber 10, a substrate 2 disposed in the vacuum chamber 10, and a susceptor for fixing and grounding the substrate 2. (susceptor: 20), and a plurality of targets (30) facing the substrate (2) made of a metal such as aluminum, and a backing plate fixing the targets (30) and applying a voltage to the target (30) backing plate: 40).

The chamber shield is formed around the substrate 2 and the target 30 inside the vacuum chamber 10 in a rectangular frame shape to prevent plasma ions from escaping to the outside of the substrate 2 and the target 30. A chamber shield 50 is provided, and a floating shield 60 is provided along the edge region of the substrate 2 below the chamber shield 50.

The substrate 2 is fixed to the substrate carrier 70. That is, the substrate 2 is loaded into the vacuum chamber 10 while being fixed to the substrate carrier 70 and the sputtering process is performed.

The susceptor 20 serves as a first electrode and the backing plate 40 serves as a second electrode. Gas such as argon (Ar) is injected while the inside of the vacuum chamber 10 is kept in a vacuum state by a vacuum pump installed outside, and a voltage is applied to the backing plate 40 from an external terminal 14. When the gas injected between the susceptor 20 and the backing plate 40 is ionized in a plasma state, the positively charged particles are accelerated to the backing plate 40 as the second electrode. 30). Through such a collision, metal particles of the target 30 are scattered, and the scattered particles are accelerated by the susceptor 20 and deposited on the substrate 2 to form a metal layer.

However, the following problem occurs with the sputtering apparatus of the above structure.

As shown in FIG. 2, the floating shield 60 is coupled to the chamber shield 50 by a screw 55 and disposed below the chamber shield 50. The floating shield 60 is disposed at an edge region of the substrate 2 to prevent plasma ions from adhering to the substrate carrier 70 that loads and fixes the substrate 2 into the vacuum chamber 10.

However, as shown in the enlarged view of FIG. 2, the floating shield 60 is disposed spaced apart from the substrate 2 by a predetermined distance. In the conventional sputtering apparatus, the substrate 2 and the floating shield 60 are disposed at intervals of about 7 mm. Since the spacing is much larger than the plasma ions, the plasma ions penetrate into the space between the substrate 2 and the floating shield 60 during sputtering, and the particles 77 adhere to the surface of the substrate carrier 70. . As such, when the particles 77 adhere to the surface of the substrate carrier 70, the temperature of the substrate carrier 70 increases, so that the temperature is changed in the substrate carrier 70 in the hot and cold sections of the sputtering process. Due to the thermal stress is generated, mechanical stress caused by the adsorbed particles (77) is generated.

In addition, the particles 77 stuck to the substrate carrier 70 are separated from the substrate carrier 70 as the particle masses during the driving of the substrate carrier 70, so that the particle masses separated during the sputtering process are different on the substrate 2. A problem such as sticking occurred.

An object of the present invention is to provide a sputtering apparatus capable of preventing plasma ions from penetrating into a substrate carrier by providing a preventing plate on a floating shield.

In order to achieve the above object, a sputtering apparatus according to the present invention comprises a vacuum chamber; A backing plate provided in the vacuum chamber and to which a voltage is applied; A target disposed in front of the backing plate; A susceptor having a substrate disposed on a front surface of the vacuum chamber, the substrate facing the backing plate, and a lower surface of the backing plate; A substrate carrier for fixing the substrate; A floating shield disposed on a substrate edge region above the substrate to block plasma ions deposited on the substrate carrier; And at least one barrier plate formed on the floating shield to block plasma ions penetrating into the space between the floating shield and the substrate.

The barrier plate includes a first barrier plate formed at an end of the floating shield and a second barrier plate formed inside the space between the floating shield and the substrate.

In the present invention, the prevention shield is provided on the floating shield to prevent the plasma ion from penetrating into the substrate carrier. Therefore, the plasma ions are prevented from being deposited on the substrate carrier to prevent the stacked materials from sticking to the substrate as foreign materials during the sputtering process.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

3 is a view showing the structure of a sputtering apparatus according to the present invention.

As shown in FIG. 3, the sputtering apparatus according to the present invention includes a vacuum chamber 110 that maintains a vacuum state as an external vacuum pump operates, a substrate 102 disposed in the vacuum chamber 10, and The substrate 102 is fixed and grounded with a susceptor 120 and a plurality of targets 130 made of metal facing the substrate 102, and the target 130 is fixed to the target. It includes a backing plate 140 for applying a voltage.

The vacuum chamber 110 is made of a metal such as aluminum and is grounded, and the susceptor 120 is connected to the bottom of the vacuum chamber 110 and grounded. The target 130 is made of the same material as the metal layer formed on the substrate 102. A metal such as Al, Al alloy, Mo, Cr, etc. may be used as the target.

The susceptor 120 faces the backing plate 140, and a substrate 102, which is an object on which a metal layer is formed, is disposed on the susceptor 120. Since the substrate forming the conventional liquid crystal display device is a rectangular shape, the susceptor 120 on which the rectangular substrate 102 is placed is typically formed in a rectangular shape, but recently, the demand for liquid crystal display devices having various shapes increases. Accordingly, the susceptor 120 may be formed in various shapes. In addition, the size of the susceptor 120 may vary depending on the size of the liquid crystal display device manufactured or the size of the mother substrate on which the plurality of liquid crystal panels are formed.

The chamber shield 150 is installed inside the vacuum chamber 110. The chamber shield 150 has a plasma ion that surrounds the backing plate 140 and the susceptor 120 and a space therebetween (ie, a space where a gas is excited and becomes a plasma) and moves toward the wall surface of the vacuum chamber 110. It is installed to prevent it. In other words, the reaction space in which the actual gas is excited by the chamber shield 150 to form a plasma state and the excited plasma ions collide with the target 130 to deposit metal ions on the substrate 102 is defined.

The floating shield 160 is installed below the chamber shield 150. Although not shown in detail in the drawing, the chamber shield 150 and the floating shield 160 are formed with screw holes, respectively, and the floating shield 160 is fastened to the chamber shield 150 by screws 155. The floating shield 160 is to block the substrate carrier 170 loading the substrate 102 into the vacuum chamber 110 from the plasma ions, along the edge of the substrate 102 below the chamber shield 150. Is formed.

The terminal 114 is connected to the backing plate 140 to apply a voltage from an external voltage source (not shown). In this case, the backing plate 140 may be formed in plural as shown in the drawing, but may be formed in one. The target 130 is disposed in front of the backing plate 140. In this case, a plurality of targets 130 may be formed like the backing plate 140, and each target 130 may be disposed in front of the corresponding backing plate 140, or only one of the targets 130 may be formed in front of the backing plate 140. It could be.

The substrate 102 is disposed in front of the susceptor 120. The substrate 102 is loaded into the vacuum chamber 110 from the outside while being fixed to the substrate carrier 170. In this case, the substrate 102 may be formed through various processes such as an insulating layer. A clamp 172 is installed on the substrate carrier 170 to fix the substrate 170. At this time, the clamp 172 may be continuously formed over the entire end of the substrate carrier 170 to fix the entire side of the rectangular substrate 102, or a plurality of discontinuously formed at the end portion of the substrate 102 A plurality of areas of four sides may be fixed.

The substrate 102 is fixed to the substrate carrier 170, and the substrate 102 is loaded into the vacuum chamber 110 in a state where the substrate 102 is disposed perpendicular to the ground, and deposition is performed in this loaded state. In addition, the substrate 102 may be fixed to the substrate carrier 170, loaded into the vacuum chamber 110 in a state perpendicular to the ground, and then rotated 90 degrees to be sputtered in a state where the substrate 102 is disposed horizontally with the ground. have. In addition, the substrate 102 may be fixed to the substrate carrier 170 and loaded into the vacuum chamber 110 in a state parallel to the ground so that the sputtering process may proceed as it is.

The susceptor 120 serves as a first electrode and the backing plate 140 serves as a second electrode. Therefore, when a voltage is applied to the backing plate 140 from the outside, discharge occurs due to a potential difference between the first electrode (ie, the susceptor 120) and the second electrode (ie, the backing plate 140). The gas is excited to form a plasma by this discharge.

Gas is supplied from an external gas supply device (not shown). That is, gas is injected into the vacuum chamber 110 through an external gas supply device while the inside of the vacuum chamber 110 is maintained in a vacuum state by a vacuum pump installed outside.

The positively charged particles in the excited plasma ions are accelerated to the backing plate 140 and collide with the target 130. Through such collision, metal particles are scattered from the target 130, and the scattered particles are accelerated to the susceptor 120 and collide on the substrate 102 to be deposited on the substrate 102.

The first shield plate 162 and the second barrier plate 164 are formed in the floating shield 160. The first barrier plate 162 and the second barrier plate 164 are for preventing plasma ions from penetrating between the floating shield 160 and the substrate 102.

As shown in FIG. 5, the first prevention plate 162 is installed at the tip of the floating shield 160. In this case, since the first prevention plate 162 is formed at the edge region of the substrate 102, when the rectangular substrate 102 is loaded, the first prevention plate 162 may cut the edge of the rectangular substrate 102. Formed accordingly. The first prevention plate 162 is formed to a length of about 3.0mm from the end of the floating shield 160. In this case, the first prevention plate 162 is formed at an angle from the bottom of the floating shield 160 to block the space formed between the floating shield 160 and the first substrate 102. In the drawing, the first prevention plate 162 is formed at an obtuse angle from the floating shield 160, but may be formed at right angles or at an acute angle.

The second prevention plate 164 is formed inside the bottom surface of the floating shield 160. That is, the first barrier plate 162 is formed at the starting point of the space by the floating shield 160 and the first substrate 102 to block the penetration of plasma ions into the space, while the second barrier plate 164 is blocked. Is installed in the middle of the space to block the plasma ions penetrating into the space to advance to the substrate carrier 170 side.

That is, according to the present invention, two barrier plates, the first barrier plate 162 and the second barrier plate 164, are provided so that the plasma ions penetrate into the space by the floating shield 160 and the first substrate 102, thereby providing a substrate. Plasma ions are prevented from being deposited on the carrier 170.

In addition, in the present invention, instead of installing both of the first prevention plate 162 and the second prevention plate 164, the prevention of one of the first prevention plate 162 or the second prevention plate 164. Only the plate may be provided. Even in this case, although the blocking effect of plasma ions is lowered as compared with the case where two prevention plates 162 and 164 are installed, the blocking effect of plasma ions may be obtained as compared with the conventional sputtering apparatus.

As shown in the enlarged view of FIG. 4, the space or floating shield between the floating shield 160 and the first substrate 102 is formed by forming the first and second barrier plates 162 and 164. The space between 160 and substrate carrier 170 is about 4.5 mm wide. Compared to the width of the space between the floating shield 160 and the first substrate 102 in the conventional sputtering apparatus is about 7mm in the sputtering apparatus of the present invention of the space between the floating shield 160 and the first substrate 102 It can be seen that the width was reduced by about 2.5 mm.

As such, as the width of the space between the floating shield 160 and the first substrate 102 decreases, plasma ions penetrating into the space between the floating shield 160 and the first substrate 102 decrease. .

In addition, the plasma ions penetrate into the space between the floating shield 160 and the first substrate 102 by forming the first barrier plate 162 and the second barrier plate 164 as described above. Prevent ions from reaching the substrate carrier 170.

The space between the floating shield 160 and the first substrate 102 is a passage through which plasma ions penetrate into the substrate carrier 170. In the conventional sputtering apparatus illustrated in FIG. 2, since the bottom surface of the floating shield 160 is flat, the penetration passage of the plasma ions has a flat straight shape. Therefore, in the conventional sputtering apparatus, the plasma ions penetrating through the inlet between the floating shield and the first substrate smoothly reach the substrate carrier 170 and the plasma ions are deposited on the substrate carrier 170.

However, in the present invention, since the first barrier plate 162 and the second barrier plate 164 are formed, the plasma ion penetration passage between the floating shield 160 and the first substrate 102 is formed in a flat straight shape. It is not curved. In other words, the shape of the penetration passage is complicated. Therefore, even if plasma ions penetrate through the inlet of the plasma ion penetration passage between the floating shield 160 and the first substrate 102, the majority of the plasma ions are deposited on the floating shield 160 while passing through the penetration passage and thus the substrate carrier. It is not deposited at 170.

As described above, in the present invention, the first shielding plate 162 and the second blocking plate 164 are formed in the floating shield 160 to prevent plasma ions from penetrating into the substrate carrier 170 and at the same time, the penetration path. To complicate and prevent the penetrated plasma ions do not reach the substrate carrier 170. Therefore, the plasma ions can be effectively prevented from being deposited on the substrate carrier.

On the other hand, in the above detailed description, only the specific structure is disclosed as the structure of the sputtering apparatus, but the present invention is not limited to this specific structure. SUMMARY OF THE INVENTION In accordance with an aspect of the present invention, a sputtering apparatus having a floating shield is provided with at least one barrier plate on the floating shield to prevent plasma ions from penetrating into the substrate carrier. Therefore, if this object can be achieved, it can be applied to any structure of the sputtering apparatus. In other words, if the floating shield with the prevention plate is installed in the vacuum chamber, any structure of the sputtering device will be included in the present invention.

In addition, in the above description, although the space between the floating shield and the substrate is curved, plasma ions do not penetrate into the substrate carrier, but the shape of the space need not be curved. If the space is formed only in a non-linear shape such as a double curve or a shape refracted at a predetermined angle, the space of the present invention can be effectively prevented from penetrating into the substrate carrier. . In addition, in the above detailed description, the shape of the space is described as being formed in various shapes by two prevention plates, but the shape of the space may be changed into various shapes by the shape change of the lower surface of the floating shield itself.

 In other words, other examples or modifications of the present invention can be easily created by anyone in the technical field to which the liquid crystal display device using the basic concept of the present invention belongs.

1 is a view showing the structure of a conventional sputtering apparatus.

2 is a view showing the structure of the floating shield of the conventional sputtering apparatus.

3 is a view showing the structure of a sputtering apparatus according to the present invention.

4 is a view showing the structure of a floating shield of the sputtering apparatus according to the present invention.

Claims (9)

Vacuum chamber; A backing plate provided in the vacuum chamber and to which a voltage is applied; A target disposed in front of the backing plate; A susceptor having a substrate disposed on a front surface of the vacuum chamber, the substrate facing the backing plate, and a lower surface of the backing plate; A substrate carrier for fixing the substrate; A floating shield disposed on a substrate edge region above the substrate to block plasma ions deposited on the substrate carrier; And And a sputtering device formed on the floating shield and configured to block at least one plasma ion penetrating into the space between the floating shield and the substrate. The sputtering apparatus of claim 1, further comprising a chamber shield surrounding the backing plate and the susceptor. The sputtering apparatus of claim 2, wherein the floating shield is disposed below the chamber shield and fastened to the chamber shield by screws. The sputtering apparatus according to claim 1, wherein the prevention plate is installed at an end of the floating shield. The sputtering apparatus of claim 1, wherein the prevention plate is formed inside a space between the floating shield and the substrate. The method of claim 1, wherein the prevention plate, A first prevention plate formed at an end of the floating shield; And A sputtering apparatus, comprising a second prevention plate formed inside the space between the floating shield and the substrate. Vacuum chamber; A backing plate provided in the vacuum chamber and to which a voltage is applied; A target disposed in front of the backing plate; A susceptor having a substrate disposed on a front surface of the vacuum chamber, the substrate facing the backing plate, and a lower surface of the backing plate; A substrate carrier for fixing the substrate; And It is composed of a floating shield disposed on the substrate edge region of the upper substrate to block the plasma ions deposited on the substrate carrier, And a space is formed between the substrate and the floating shield, and the space is formed in a non-linear shape. 8. The sputtering apparatus of claim 7, wherein the space between the substrate and the floating shield has a width of 4.5 mm. 8. The sputtering apparatus according to claim 7, wherein the space has a curved shape.
KR1020090119995A 2009-12-04 2009-12-04 Sputtering apparatus KR20110063058A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140121574A (en) * 2013-04-08 2014-10-16 엘지디스플레이 주식회사 Deposition Apparatus for Manufacturing Display Panel Device and Method for Manufacturing Display Panel Device
KR20160132246A (en) * 2015-05-08 2016-11-17 (주)이루자 Sputtering Device Controlling residual stress of substrate
US10072330B2 (en) 2015-01-22 2018-09-11 Samsung Display Co., Ltd. Shield mask mounting fitting for a sputtering apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140121574A (en) * 2013-04-08 2014-10-16 엘지디스플레이 주식회사 Deposition Apparatus for Manufacturing Display Panel Device and Method for Manufacturing Display Panel Device
US10072330B2 (en) 2015-01-22 2018-09-11 Samsung Display Co., Ltd. Shield mask mounting fitting for a sputtering apparatus
KR20160132246A (en) * 2015-05-08 2016-11-17 (주)이루자 Sputtering Device Controlling residual stress of substrate

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