KR20160130046A - Positive photosensitive resin composition for display device and display device comprising the same - Google Patents

Abstract

According to an embodiment of the present invention, a positive photosensitive resin composition comprises: a) a copolymer represented by chemical formula 1; b-1) an oxime-based photoacid generator; b-2) a triazine-based photoacid generator; c) an organic base; and d) a solvent. In chemical formula 1, R_1 is one from acetyl and ketal groups, and x+y+z=1.

Description

TECHNICAL FIELD [0001] The present invention relates to a positive type photosensitive resin composition for a display device, and a display device including the positive type photosensitive resin composition.

The present invention relates to a positive photosensitive resin composition for a display device and a display device including the positive photosensitive resin composition.

Recently, a photosensitive organic insulating film has been used to insulate between wirings disposed between layers in a liquid crystal display device and an organic light emitting display device and to improve an aperture ratio.

Although an acrylic insulating film is mainly used as an interlayer insulating film for a liquid crystal display, there is a problem of outgassing due to a decrease in heat resistance. In addition, a polyimide-based material is used as an interlayer insulating film or a pixel defining layer for an organic light emitting display, but it has problems such as sensitivity, adhesive force, transparency and heat discoloration resistance.

In addition, wiring of fine line width is required to realize high resolution. However, it is difficult to realize such a high resolution in the photosensitive resin used in the display field.

A problem to be solved by the present invention is to provide a positive photosensitive resin composition which is excellent in sensitivity and resolution and applicable to a high-resolution display device.

To solve these problems, a positive photosensitive resin composition according to one embodiment of the present invention comprises: a) a copolymer represented by the following formula (1); b-1) oxime-based photoacid generators; b-2) triazine-based photoacid generators; c) an organic base; And d) a solvent.

(화학식1)

(Formula 1)

In Formula 1, R ₁ is any one of acetal and ketal, and x + y + z = 1.

X may be 0.1 to 0.9, y may be 0.0 to 0.3, and z may be 0.1 to 0.9.

The oxime-based photoacid generator may include 3 to 20 parts by weight, and the triazine-based photoacid generator may include 0.5 to 10 parts by weight.

The copolymer may include 100 parts by weight of the organic base, 0.1 to 5 parts by weight of the organic base, and 50 to 90% by weight of the solvent.

The oxime-based photoacid generator may have a main absorption wavelength of 380 nm or less and a pH of 3.0 to 4.0.

The triazine-based photoacid generator may have a main absorption wavelength of 380 nm or more and a pH of 2.0 to 3.0.

A melamine crosslinking agent and a silane coupling agent.

The organic light emitting display according to an embodiment of the present invention includes an insulating substrate, a thin film transistor disposed on the insulating substrate, a first electrode connected to the thin film transistor, a second electrode disposed on the first electrode, And a second electrode disposed on the organic light emitting layer, wherein the pixel defining layer comprises a positive photosensitive resin composition, wherein the positive photosensitive resin composition comprises: a) A copolymer represented by the formula (1); b-1) oxime-based photoacid generators; b-2) triazine-based photoacid generators; c) an organic base; And d) a solvent.

(화학식1)

(Formula 1)

In Formula 1, R ₁ is any one of acetal and ketal, and x + y + z = 1.

X may be 0.1 to 0.9, y may be 0.0 to 0.3, and z may be 0.1 to 0.9.

The positive photosensitive resin composition may include 3 to 20 parts by weight of the oxime-based photoacid generator, and 0.5 to 10 parts by weight of the triazine-based photoacid generator.

The positive photosensitive resin composition may include a solvent including 100 parts by weight of the copolymer, 0.1 to 5 parts by weight of the organic base, and a solid content of 50 to 90% by weight.

The oxime-based photoacid generator may have a main absorption wavelength of 380 nm or less and a pH of 3.0 to 4.0.

The triazine-based photoacid generator may have a main absorption wavelength of 380 nm or more and a pH of 2.0 to 3.0.

A melamine crosslinking agent and a silane coupling agent.

A display device according to an embodiment of the present invention includes a first insulating substrate, a thin film transistor located on the first insulating substrate, a pixel electrode connected to the thin film transistor, a common electrode insulated from the pixel electrode, And a liquid crystal layer interposed between the first insulating substrate and the second insulating substrate, wherein at least one of the thin film transistor and the pixel electrode is formed using a positive photosensitive resin composition , Said positive photosensitive resin composition comprising: a) a copolymer represented by the following formula (1); b-1) oxime-based photoacid generators; b-2) triazine-based photoacid generators; c) an organic base; And d) a solvent.

(화학식 1)

(Formula 1)

In Formula 1, R ₁ is any one of acetal and ketal, and x + y + z = 1.

X may be 0.1 to 0.9, y may be 0.0 to 0.3, and z may be 0.1 to 0.9.

The positive photosensitive resin composition may include 3 to 20 parts by weight of the oxime-based photoacid generator, and 0.5 to 10 parts by weight of the triazine-based photoacid generator.

The oxime-based photoacid generator may have a main absorption wavelength of 380 nm or less and a pH of 3.0 to 4.0.

The positive photosensitive resin composition as described above and the display device including the same are excellent in sensitivity, resolution, pattern profile and dispersion, and particularly excellent in Line Edge Roughness (LER). Therefore, it can be used for forming wiring electrodes requiring a fine pattern, and it is possible to provide a high-resolution display device.

1 is a layout diagram of a signal line of a display unit of an organic light emitting display according to an embodiment of the present invention.
2 is an equivalent circuit diagram of one pixel of a display unit according to an embodiment of the present invention.
3 is a cross-sectional view of one pixel of the organic light emitting diode display of FIG.
4 is a one pixel layout diagram of a display apparatus according to another embodiment of the present invention.
5 is a cross-sectional view taken along the line VV in Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: FIG. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated with like reference numerals throughout the specification. It will be understood that when an element such as a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the element directly over another element, Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

First, a positive photosensitive resin composition for a display device according to an embodiment of the present invention will be described below.

First, the positive photosensitive resin composition according to one embodiment of the present invention comprises a) a copolymer represented by the following formula (1), b-1) at least one oxime-based photoacid generator, b-2) triazine- Above, c) an organic base, and d) a solvent.

(화학식1)

(Formula 1)

In Formula 1, R ₁ is either acetal or ketal. X + y + z = 1, x is 0.1 to 0.9, y is 0.0 to 0.3, and z may be 0.1 to 0.9.

The positive photosensitive resin composition for a display device according to the embodiment of the present invention is a positive photosensitive resin composition for a display device, comprising a) 100 parts by weight of a copolymer, b-1) 3 to 20 parts by weight of an oxime-based photoacid generator, b-2) 0.5 to 10 parts by weight of a solvent, c) 0.1 to 5 parts by weight of an organic base, and d) a solid content of 50 to 90% by weight.

(Z) -N- (cyclohexylsulfonyloxy) -4-methoxybenzimidoyl cyanide, (Z) -N- (cyclohexylsulfonyloxy) (Z) -N- (cyclohexylmethylsulfonyloxy) -4-dimethoxybenzimidoyl cyanide, (Z) -3,4-dimethoxy- N- (octylsulfonyloxy) benzimidoyl cyanide, methoxybenzylidene cyanide, (Z) -4-methoxy-N- (octylsulfonyloxy) benzimidoyl cyanide, etc. These may be used alone or in admixture of two or more. The photosensitive resin composition according to an embodiment of the present invention includes 3 to 20 parts by weight of the oxime-based photoacid generator. When the content of the oxime-based photoacid generator is less than 3 parts by weight, the sensitivity is lowered and the resolution is lowered.

Also, the oxime-based photoacid generator should have a main absorption wavelength of 380 nm or less, and the particle size of the acid generated therefrom should have a molecular weight (Mw) of 150 or more and a pH of 3.0 to 4.0.

When the wavelength of the main absorption wavelength of the oxime-based photoacid generator is 380 nm or more, the resolution is lowered. When the molecular weight of the generated acid is less than 150, the stability (PED) after exposure is lowered and the dispersion becomes weak. If pH is higher than 4.0, the sensitivity becomes slower.

The triazine-based photoacid generator used in the examples of the present invention is 2- [2- (Furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) , 4-dimethoxyphenyl) -4,6-bis (trichloromethyl) -s-triazine, 2- [2- (5-methylfuran- Etc., and they may be used singly or in combination of two or more.

The photosensitive resin composition according to an embodiment of the present invention may include 0.5 to 10 parts by weight of a triazine-based photoacid generator. If the content of the triazine-based photoacid generator is 10 parts by weight or more, the taper angle becomes low. If the content is less than 0.5 part by weight, wave pattern formation and line edge roughness (LER) become worse.

The triazine-based photoacid generator may have a main absorption wavelength of 380 nm or more and a molecular weight (Mw) of 100 or less of the acid generated thereby and a pH of 2.0 to 3.0. When the main absorption wavelength of the triazine-based photoacid generator is less than 380 nm, there is no improvement in wave pattern and line edge roughness lowering due to the reflected light absorption, and the effect of improving the wave pattern and line edge roughness is also inferior when the Mw is 100 or more. When it is 2.0 or less, the stability (PED) with time is degraded after exposure and the scattering becomes weak.

C) The organic base used in the embodiment of the present invention is at least one selected from the group consisting of triethylamine, triisobutylamine, triisooctylamine, trioctylamine, diethanolamine, triethanolamine, benzylamine, allylamine, ethanolamine, tributylamine , Tetrabutylammonium hydroxide, tetramethylammonium hydroxide, trimethylsulfonium hydroxide, triphenylsulfonium hydroxide, dimethyldodecylamine, aniline, para-toluidine, and the like, They can be mixed and used simultaneously or stepwise.

Also, the positive photosensitive resin composition of the present invention includes d) a solvent, and the solvent of d) does not cause flatness and coating unevenness of the positive photosensitive resin composition to form a uniform pattern profile.

The solvent of d) may be, for example, propylene glycol monomethyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate , Propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, dipropylene glycol dimethyl ether, dibutylene glycol dimethyl ether, and di Butylene glycol diethyl ether, diethylene glycol butyl methyl ether, diethylene glycol butyl ethyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, diethylene glycol tertiary butyl ether, tetraethylene Diethylene glycol ethylhexyl ether, diethylene glycol methyl hexyl ether, dipropylene glycol butyl methyl ether, dipropylene glycol ethyl hexyl ether and dipropylene glycol methyl hexyl ether, ethyl ethoxypropyl ether, diethyleneglycol diethyl ether, Dipropylene glycol monomethyl ether acetate, n-butyl acetate, isobutyl acetate, ethylene glycol monomethyl acetate, ethylene glycol n-butyl acetate, diethylene glycol dimethyl ether, dipropylene glycol monomethyl acetate, Diethylene glycol methyl ether, dipropylene glycol n-butyl ether, tripropylene glycol n-butyl ether, tripropylene glycol methyl ether, propylene glycol methyl ether acetate, propylene glycol diacetate, methyl 3-ethoxypropionate, methanol, Me Methylcellulose, methylcellulose, methylcellulose, cellosolve monomethyl ether, ethylol sorbose acetate, diethylene glycol monomethyl ether, methyl ethyl ketone, 4-hydroxy 4 methyl 2-pentanone, They may be used singly or in combination of two or more.

The solvent of d) may be contained so that the solid content of the positive photosensitive resin composition is 50 to 90% by weight. When the solid content is less than 50% by weight, the thickness of the coating is reduced and uniformity is lowered. When the content of the solid is more than 90% by weight, the thickness of the coating becomes thick.

The photosensitive resin composition for a display device according to an embodiment of the present invention may further include a melamine crosslinking agent and a silane coupling agent.

As the melamine crosslinking agent, hexamethoxymethyl melamine, hexamethylol melamine hexamethyl ether, hexabutoxymethyl melamine and the like can be used.

The silane coupling agent is selected from the group consisting of alpha-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, alpha-isocyanatepropyltriethoxysilane, alpha-glycidoxypropyltrimethoxysilane, (3,4-epoxycyclohexyl) ethyltrimethoxysilane and the like can be used.

The positive photosensitive resin composition described above is excellent in physical properties such as sensitivity and resolution, and may be particularly advantageous in realizing a fine pattern.

Such a positive photosensitive resin composition can be formed by an insulating film having a pattern through a method described below, a mask having a pattern, or the like.

First, a positive photosensitive resin composition according to an embodiment of the present invention is applied to a substrate by spin coating, slit-and-spin coating, slit coating, or roll coating. Next, after drying in a vacuum, the solvent is removed through pre-baking to form a coating film. At this time, the pre-baking may be performed at a temperature of about 100 to 120 ° C for 1 to 3 minutes.

Then, a predetermined pattern is formed by irradiating the coating film with visible light, ultraviolet light, far ultraviolet light, electron beam or X-ray according to a previously prepared pattern and developing it with a developing solution to remove unnecessary portions.

After developing with the developing solution, it is cleaned with ultrapure water for about 30 to 90 seconds to remove unnecessary portions and dry to form a pattern. After irradiating the formed pattern with light such as ultraviolet light, the pattern is heat-treated at a temperature of about 150 to 400 DEG C for about 30 to 90 minutes using a heating apparatus such as an oven to obtain a final pattern.

Hereinafter, an organic light emitting display device including the above-described positive photosensitive resin composition will be described. 2 is an equivalent circuit diagram of one pixel of a display unit according to an exemplary embodiment of the present invention. FIG. 3 is a circuit diagram of an organic light emitting display according to an embodiment of the present invention. Sectional view of one pixel of the light emitting display device.

1, a first signal line 121 that extends in one direction and transmits a scanning signal, a second signal line 121 that crosses the first signal line 121 and transmits a video signal, Two signal lines 171 are formed. The first signal line and the second signal line are connected to each pixel, and the pixel may be connected to various signal lines (not shown) to which other signals other than the first signal line and the second signal line are applied.

On the substrate 100, a driver 510 for controlling the thin film transistor of the pixel is located in the peripheral region PB outside the first display area PA. The driving unit 510 may be mounted on the substrate 100 with an IC chip, or may be integrated on the substrate together with the thin film transistors of the first display area PA.

The OLED display according to an embodiment of the present invention includes a plurality of pixels each including an equivalent circuit as shown in FIG.

Referring to FIG. 2, an organic light emitting display according to an embodiment of the present invention includes a plurality of signal lines 121 and 171, and a plurality of pixels PX connected to the signal lines 121 and 171 and arranged in a matrix form. .

The signal line includes a plurality of first signal lines 121 transmitting a gate signal (or a scanning signal), a plurality of second signal lines 171 transmitting a data signal, and a plurality of third signal lines 172 transmitting a driving voltage Vdd ). The first signal line 121 extends substantially in the row direction and is substantially parallel to each other. The second signal line 171 and the third signal line 172 intersect the first signal line 121 and extend in the column direction, Parallel.

Each pixel PX includes a switching thin film transistor Q2, a driving thin film transistor Q1, a storage capacitor Cst, and an organic light emitting diode , OLED 70).

The switching thin film transistor Q2 has a control terminal, an input terminal and an output terminal. The control terminal is connected to the first signal line 121, the input terminal is connected to the second signal line 171, And is connected to the driving thin film transistor Q1. The switching thin film transistor Q2 transmits a data signal applied to the second signal line 171 to the driving thin film transistor Q1 in response to a scanning signal applied to the first signal line 121. [

The driving thin film transistor Q1 also has a control terminal, an input terminal and an output terminal. The control terminal is connected to the switching thin film transistor Q2, the input terminal is connected to the third signal line 172, And is connected to the organic light emitting element 70. The driving thin film transistor Q1 passes an output current I _LD whose magnitude varies according to the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving thin film transistor Q1. The capacitor Cst charges the data signal applied to the control terminal of the driving thin film transistor Q1 and holds it even after the switching thin film transistor Q2 is turned off.

The organic light emitting diode 70 has an anode connected to the output terminal of the driving thin film transistor Q1 and a cathode connected to the common voltage Vss. The organic light emitting diode 70 displays an image by emitting light with different intensity according to the output current I _LD of the driving thin film transistor Q1.

3 is a cross-sectional view of one pixel of the organic light emitting diode display of FIG. In FIG. 3, the second thin film transistor Q2 and the organic light emitting diode 70 of FIG. 2 will be described in detail in the order of stacking. Hereinafter, the second thin film transistor Q2 is referred to as a thin film transistor.

As shown in FIG. 3, the OLED display includes a substrate 100, and a buffer layer 120 is disposed on the substrate 100.

Buffer layer 120 may be formed of a single film or a silicon nitride (SiNx) and silicon oxide (SiO ₂₎ is a laminated double film structure of silicon nitride (SiNx). The buffer layer 120 serves to prevent the penetration of unnecessary components such as impurities or moisture and at the same time to flatten the surface.

On the buffer layer 120, a semiconductor 135 made of polycrystalline silicon is located.

The semiconductor 135 includes a channel region 1355, a source region 1356 and a drain region 1357 formed on both sides of the channel region 1355, respectively. The channel region 1355 of the semiconductor is an impurity-doped polycrystalline silicon, that is, an intrinsic semiconductor. The source region 1356 and the drain region 1357 are polycrystalline silicon doped with a conductive impurity, that is, an impurity semiconductor. The impurity to be doped in the source region 1356 and the drain region 1357 may be any one of a p-type impurity and an n-type impurity.

A gate insulating film 140 is disposed on the semiconductor 135. The gate insulating layer 140 may be a single layer or a plurality of layers including at least one of tetra ethyl orthosilicate (TEOS), silicon nitride, silicon oxide, and the above-described positive photosensitive resin composition.

A gate electrode 155 is located on the semiconductor 135 and a gate electrode 155 is overlapped with the channel region 1355.

The gate electrode 155 may be formed of a single layer or a plurality of layers of a low resistance material or a corrosion resistant material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof.

A first interlayer insulating film 160 is disposed on the gate electrode 155. The material of the first interlayer insulating film 160 may be tetra ethyl orthosilicate (TEOS), silicon nitride, silicon oxide or the above-described positive photosensitive resin composition in the same manner as the gate insulating film 140, Layer.

A source contact hole 66 and a drain contact hole 67 are formed in the first interlayer insulating film 160 and the gate insulating film 140 to expose the source region 1356 and the drain region 1357, respectively.

A source electrode 176 and a drain electrode 177 are located on the first interlayer insulating film 160. The source electrode 176 is connected to the source region 1356 through the contact hole 66 and the drain electrode 177 is connected to the drain region 1357 through the contact hole 67.

The source electrode 176 and the drain electrode 177 may be formed of a single layer or a plurality of layers of a low resistance material or a corrosion resistant material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof. For example, Ti / Cu / Ti, Ti / Ag / Ti, and Mo / Al / Mo.

The gate electrode 155, the source electrode 176, and the drain electrode 177 are the control electrode, the input electrode, and the output electrode of FIG. 2, respectively, and together with the semiconductor 135 form a thin film transistor. A channel of the thin film transistor is formed in the semiconductor 135 between the source electrode 176 and the drain electrode 177.

A second interlayer insulating film 180 is formed on the source electrode 176 and the drain electrode 177. The second interlayer insulating film 180 includes a contact hole 82 for exposing the drain electrode 177.

The material of the second interlayer insulating film 180 may be tetraethyl orthosilicate (TEOS), silicon nitride, silicon oxide or the above-described positive photosensitive resin composition as in the case of the first interlayer insulating film. .

A first electrode 710 is disposed on the second interlayer insulating film 180. The first electrode 710 may be electrically connected to the drain electrode 177 through the contact hole 82 and the first electrode 710 may be an anode electrode of the organic light emitting device of FIG.

Although the interlayer insulating layer is formed between the first electrode 710 and the drain electrode 177 in the exemplary embodiment of the present invention, the first electrode 710 may be formed on the same layer as the drain electrode 177, (177).

A pixel defining layer 190 is disposed on the first electrode 710. The pixel defining layer 190 has an opening 95 for exposing the first electrode 710. The pixel defining layer 190 may include polyacrylates, polyimides, or a positive photosensitive resin composition as described above, and a silica-based inorganic material.

The organic light emitting layer 720 is located in the opening 95 of the pixel defining layer 190.

The organic light emitting layer 720 may include a light emitting layer, a hole-injection layer (HIL), a hole transporting layer (HTL), an electron transporting layer (ETL) EIL). ≪ / RTI >

When the organic light emitting layer 720 includes both of them, the hole injecting layer may be disposed on the first electrode 710, which is the anode electrode, and the hole transporting layer, the light emitting layer, the electron transporting layer, and the electron injecting layer may be sequentially stacked thereon.

At this time, the light emitting layer may be formed of a low molecular organic material or a polymer organic material such as PEDOT (Poly 3,4-ethylenedioxythiophene). The light emitting layer may include a red light emitting layer emitting red light, a green light emitting layer emitting green light, and a blue light emitting layer emitting blue light, and the red light emitting layer, the green light emitting layer and the blue light emitting layer may be formed in red pixels, green pixels, Thereby realizing an image.

Further, a color image can be realized by laminating a red light emitting layer, a green light emitting layer and a blue light emitting layer all together in a red pixel, a green pixel and a blue pixel, and forming a red color filter, a green color filter and a blue color filter for each pixel . As another example, a color image may be realized by forming a white light emitting layer that emits white light in both red pixels, green pixels, and blue pixels, and forming a red color filter, a green color filter, and a blue color filter for each pixel. When a color image is implemented using the white light emitting layer and the color filter, a deposition mask for depositing the red light emitting layer, the green light emitting layer, and the light emitting layer on each of the individual pixels, that is, the red pixel, the green pixel and the blue pixel, may not be used.

In addition, the white light emitting layer may be formed of one light emitting layer that emits white light, and a plurality of light emitting layers that emit different colors may be stacked to emit white light. For example, a configuration in which at least one yellow light emitting layer and at least one blue light emitting layer are combined to enable white light emission, a configuration in which at least one cyan light emitting layer and at least one red light emitting layer are combined to enable white light emission, And a configuration in which the light emitting layer and at least one green light emitting layer are combined to enable white light emission.

A second electrode 730 is disposed on the pixel defining layer 190 and the organic light emitting layer 720.

The second electrode 730 is a cathode electrode of the organic light emitting device. Accordingly, the first electrode 710, the organic light emitting layer 720, and the second electrode 730 constitute the organic light emitting device 70.

Depending on the direction in which the organic light emitting diode 70 emits light, the organic light emitting display device may have any one of a front display type, a back display type, and a double-sided display type.

Next, a sealing member 260 is disposed on the second electrode 730.

The sealing member 260 may be formed by alternately stacking one or more organic layers and one or more inorganic layers. Each of the inorganic layer or the organic layer may be plural.

The organic layer is formed of a polymer, and may be a single film or a laminated film formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. More preferably, the organic layer may be formed of polyacrylate, and specifically includes a polymerized monomer composition comprising a diacrylate monomer and a triacrylate monomer. The monomer composition may further contain a monoacrylate monomer. Further, the monomer composition may further include a known photoinitiator such as TPO, but is not limited thereto.

The inorganic layer may be a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the inorganic layer may comprise any one of _{SiNx, Al 2 O 3, SiO} 2, TiO 2.

The uppermost layer exposed to the outside of the sealing layer may be formed of an inorganic layer to prevent moisture permeation to the organic light emitting element.

As described above, the organic light emitting diode display according to the exemplary embodiment of the present invention may include an insulating layer, a protective layer, and a pixel defining layer including a positive photosensitive resin composition. Also, a positive photosensitive resin composition according to an embodiment of the present invention may be used to form a pattern like a thin film transistor.

In addition, although the present invention has been described with respect to the positive photosensitive resin composition used in the organic light emitting diode display device, it is needless to say that the present invention can be used in any display device.

Hereinafter, a display device according to an embodiment of the present invention will be described with reference to FIGS. 4 to 5. FIG.

The gate line 121 including the gate electrode 124 is located on the first insulating substrate 110 made of transparent glass or plastic.

The gate conductor may be an aluminum-based metal such as aluminum (Al) or aluminum alloy, a series metal such as silver or silver alloy, a copper-based metal such as copper (Cu) or copper alloy, a molybdenum series such as molybdenum Metal, chromium (Cr), tantalum (Ta), and titanium (Ti).

A gate insulating film 140 made of silicon nitride (SiNx) and / or silicon oxide (SiOx) and / or the above-described positive photosensitive resin composition is disposed on the gate conductor. The gate insulating layer 140 may have a multi-layer structure including at least two insulating layers having different physical properties.

A semiconductor layer 154 is disposed on the gate insulating layer 140 and a data line 171 including a source electrode 173 and a drain electrode 175 is disposed on the semiconductor layer 154 and the gate insulating layer 140.

The data line 171 includes a wide end portion (not shown) for connection with another layer or an external driving circuit. The data line 171 transmits a data signal and extends mainly in the vertical direction and crosses the gate line 121.

In this case, the data line 171 may have a first bent portion having a curved shape in order to obtain the maximum transmittance of the liquid crystal display device, and the bent portions may be V-shaped in the middle region of the pixel region. The intermediate region of the pixel region may further include a second bent portion bent to form a predetermined angle with the first bent portion.

The source electrode 173 is part of the data line 171 and is arranged on the same line as the data line 171. The drain electrode 175 is formed so as to extend in parallel with the source electrode 173. Therefore, the drain electrode 175 is in parallel with a part of the data line 171. [

The gate electrode 124, the source electrode 173 and the drain electrode 175 together with the semiconductor layer 154 constitute one thin film transistor (TFT), and the channel of the thin film transistor is connected to the source electrode 173 and the drain electrode 175 of the semiconductor layer 154.

The liquid crystal display device according to another embodiment of the present invention includes a source electrode 173 located on the same line as the data line 171 and a drain electrode 175 extending in parallel with the data line 171, The width of the thin film transistor can be increased without widening the area occupied by the body, thereby increasing the aperture ratio of the liquid crystal display device.

The data conductor including the data line 171 is preferably made of a refractory metal such as molybdenum, chromium, tantalum and titanium, or an alloy thereof. The data conductor is preferably formed of a refractory metal film (not shown) (Not shown). ≪ / RTI >

Examples of the multilayer structure include a double film of a chromium or molybdenum (alloy) lower film and an aluminum (alloy) upper film, a molybdenum (alloy) lower film, an aluminum (alloy) intermediate film and a molybdenum (alloy) upper film. However, the data line 171 and the drain electrode 175 may be made of various metals or conductors.

The first protective film 180p is disposed on the exposed portions of the data conductors 171, 173, and 175, the gate insulating film 140, and the semiconductor layer 154. [ The first protective film 180p may be formed of an organic insulating material or an inorganic insulating material, for example, the above-described positive photosensitive resin composition.

The second protective film 180q is located on the first protective film 180p. The second protective film 180q may be omitted.

The second protective film 180q may be a color filter. When the second protective film 180q is a color filter, the second protective film 180q can uniquely display one of the primary colors. Examples of the basic color include three primary colors such as red, green, yellow, cyan, magenta, and the like. Although not shown, the color filter may further include a color filter for displaying a mixed color or a white color of the basic color in addition to the basic color.

A common electrode 270 is disposed on the second passivation layer 180q. The common electrode 270 may be in the shape of a plate on the front surface of the substrate 110 and may have an opening (not shown) disposed in a region corresponding to the periphery of the drain electrode 175. That is, the common electrode 270 may have a plate-like planar shape.

The common electrodes 270 located in adjacent pixels may be connected to each other to receive a common voltage of a predetermined magnitude supplied from outside the display region.

On the common electrode 270, a third protective film 180r is located. The third passivation layer 180r may be formed of an organic insulating material or an inorganic insulating material, for example, the above-described positive photosensitive resin composition.

The pixel electrode 191 is located on the third protective film 180r. The pixel electrode 191 includes a curved edge substantially in parallel with the first bent portion and the second bent portion of the data line 171. The pixel electrode 191 has a plurality of cutouts and includes a plurality of slits defined by a plurality of cutouts.

A contact hole 185 for exposing the drain electrode 175 is located in the first protective film 180p, the second protective film 180q, and the third protective film 180r. The pixel electrode 191 is physically and electrically connected to the drain electrode 175 through the contact hole 185 and receives a voltage from the drain electrode 175.

Although not shown, an alignment layer is coated on the pixel electrode 191 and the third passivation layer 180r. The alignment film may be a horizontal alignment film and rubbed in a certain direction.

Now, the upper display panel 200 will be described.

The light shielding member 220 is positioned on the insulating substrate 210 and the flat film 250 is positioned on the light shielding member 220.

In another embodiment of the present invention, the color filter is disposed on the lower panel and the light shielding member 220 is disposed on the upper panel. However, the present invention is not limited thereto. That is, both the color filter and the light shielding member may be located on the lower panel, or both the color filter and the light shielding member may be located on the upper panel or the position of the color filter and the light shielding member may be changed.

The liquid crystal layer 3 according to another embodiment of the present invention may include a liquid crystal composition having a positive dielectric anisotropy and specifically having the above-described positive dielectric anisotropy. The liquid crystal molecules 31 of the liquid crystal layer 3 can be aligned horizontally with respect to the surfaces of the two display panels 100 and 200 in the absence of an electric field.

Although the present invention has been described with respect to the embodiment where the pixel electrode 191 is disposed on the common electrode 270, it is needless to say that the common electrode 270 may be disposed on the pixel electrode 191.

As described above, the display device according to the embodiment of the present invention may include an insulating film or a protective film including a positive photosensitive resin composition. Also, a positive photosensitive resin composition according to an embodiment of the present invention may be used to form a pattern like a thin film transistor.

In addition, although the present disclosure has been described with respect to the positive photosensitive resin composition used in the display device according to one embodiment, it is needless to say that the present invention is not limited thereto and can be used in any display device.

Hereinafter, a positive photosensitive resin composition according to an embodiment of the present invention and a comparative example will be described. The present invention is not intended to limit the scope of the present invention to the embodiments described below in order to facilitate understanding of the present invention.

Example  1 (Preparation of photosensitive resin composition)

10 parts by weight of (Z) -4-methoxy-N- (tosyloxy) benzimidoyl cyanamide as a oxime-based photoacid generator, 10 parts by weight of a triazine series 1 part by weight of 2- [2- (Furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine as a photoacid generator, 0.5 part by weight of triethylamine as an organic base, And dissolved in propylene glycol monomethyl ether acetate so as to have a concentration of 20% by weight, followed by filtration with a Millipore filter of 0.1 占 퐉 to prepare a photosensitive resin composition.

(화학식 1-A)

(1-A)

Example  2

Except that 3 parts by weight of 2- [2- (Furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine was used as a triazine-based photoacid generator in the preparation of the photosensitive resin composition in Example 1 Was prepared in the same manner as in Example 1 to prepare a photosensitive resin composition.

Example  3

Except that 3 parts by weight of 2- [2- (3,4-Dimethoxypheyl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine was used as a triazine-based photoacid generator in the preparation of the photosensitive resin composition in Example 1 Was prepared in the same manner as in Example 1 to prepare a photosensitive resin composition.

Example  4

3 parts by weight of 2- [2- (5-Methylfuran-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine was used as the triazine-based photoacid generator in the preparation of the photosensitive resin composition in Example 1 , The same procedure as in Example 1 was carried out to prepare a photosensitive resin composition.

Example  5

Except that 10 parts by weight of (Z) -N- (cyclohexylsulfonyloxy) -4-methoxybenzimidoyl cyanide was used as an oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 2, to prepare a photosensitive resin composition .

Example  6

A photosensitive resin composition was prepared in the same manner as in Example 2, except that 10 parts by weight of (Z) -N- (cyclohexylsulfonyloxy) benzimidoyl cyanide was used as an oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 2 .

Example  7

Except that 10 parts by weight of (Z) -N- (cyclohexylsulfonyloxy) -3,4-dimethoxybenzimidoyl cyanide was used as the oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 2, To prepare a resin composition.

Example  8

The procedure of Example 2 was repeated except that 10 parts by weight of (Z) -3,4-dimethoxy-N- (octylsulfonyloxy) benzimidoyl cyanide was used as the oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 2 To prepare a photosensitive resin composition.

Example  9

Except that 10 parts by weight of (Z) -N- (cyclohexylmethylsulfonyloxy) -4-methoxybenzimidoyl cyanide was used as an oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 2 to prepare a photosensitive resin composition .

Example  10

Except that 10 parts by weight of (Z) -4-methoxy-N- (octylsulfonyloxy) benzimidoyl cyanide was used as the oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 2, A composition was prepared.

Comparative Example  One

A photosensitive resin composition was prepared in the same manner as in Example 1 except that a triazine-based photoacid generator was not used in the preparation of the photosensitive resin composition in Example 1.

Comparative Example  2

Except that 0.3 part by weight of 2- [2- (Furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine was used as a triazine-based photoacid generator in the preparation of the photosensitive resin composition in Example 1 Was prepared in the same manner as in Example 1 to prepare a photosensitive resin composition.

Comparative Example  3

Except that 10 parts by weight of 2- [2- (Furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -s-triazine was used as a triazine-based photoacid generator in the preparation of the photosensitive resin composition in Example 1 Was prepared in the same manner as in Example 1 to prepare a photosensitive resin composition.

Comparative Example  4

2- [2- (Furan-2-yl) ethenyl] -4,6-bis (trichloromethyl) -triazine as a triazine-based photoacid generator without using an oxime-based photoacid generator in the preparation of the photosensitive resin composition in Example 1 s-triazine was used in an amount of 10 parts by weight, to thereby prepare a photosensitive resin composition.

The properties of the photosensitive resin compositions of Examples 1 to 10 and Comparative Examples 1 to 4 described above were measured and shown in Table 1 below.

A) A positive photosensitive resin composition solution prepared in Examples 1 to 10 and Comparative Examples 1 to 4 was coated on a 370 cm X 470 cm glass substrate on which sensitivity-silicon nitride (SiNx) was deposited using a slit coater. After vacuum drying to 0.5 torr, it was prebaked on a hot plate at 100 DEG C for 90 seconds to form a 2.0 mu m film.

Next, using a pattern mask having a width of 2 탆, ultraviolet rays having an intensity of 10 mW / cm 2 were irradiated using an exposure machine. Thereafter, it was developed in an aqueous solution of 2.38% by weight of tetramethylammonium hydroxide at 23 DEG C for 70 seconds and rinsed with ultrapure water for 60 seconds. The sensitivity was measured based on the amount of exposure formed with a line width of 2.0 占 퐉 using SEM.

(B) Wave pattern-The presence or absence of the wave pattern was observed with respect to the front surface of the pattern film formed in the measurement of the sensitivity of the item a) above. When the wave pattern is generated, it is marked with .largecircle.

C) Line Edge Roughness (LER) - The line width of the pattern film formed when measuring the sensitivity of the above a) was observed from the top, and the deviation between the largest line width and the smallest line width was examined. The smaller the LER, the better. The case where the LER is 0.2 mu m or more is indicated by x, the case where the LER is 0.2 mu m to 0.1 mu m is indicated by DELTA, and the case where the LER is less than 0.1 mu m is indicated by o.

D) Taper Angle - The taper angle of the cross section of the pattern film formed in the measurement of the sensitivity of the above a) was confirmed. When the angle is 80 degrees or more,?, When 80 degrees to 70 degrees is?, And when the angle is less than 70 degrees, it is indicated as x.

Referring to the above Table 1, it can be seen that Examples 1 to 10 and Comparative Examples 1 and 2 exhibit almost similar sensitivities except for Comparative Examples 3 and 4, Comparative Examples 1 and 2 show that triazine- It was confirmed that the wave pattern was formed.

Next, the line edge roughness was examined. As a result, it was confirmed that Comparative Example 1 and Comparative Example 2 which did not contain a triazine-based photoacid generator had poor line edge roughness. That is, it was confirmed that the deviation between line widths is significant.

Next, as a result of examining the tapered angle with respect to the line width, Comparative Examples 3 and 4 which did not include the oxime-based photoacid generator showed a tapered angle of less than 70 degrees.

In summary, in the comparative examples not containing the triazine-based photoacid generator, a wave pattern was formed or a linewidth variation was severely generated, and in a comparative example not containing a oxime-based photoacid generator, a taper angle of line width was formed small Less than 70 degrees).

Therefore, as in the embodiment of the present invention, the positive photosensitive resin composition including both the triazine-based photoacid generator and the oxime-based photoacid generator is effective not only in reducing sensitivity, but also in reducing wave pattern formation and line width variation, It can be kept high. That is, it can be seen that a high-resolution display device can be provided because of easy implementation of a fine pattern.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

121: first signal line 135: semiconductor
1355: channel region 1356: drain region
140: gate insulating film 155: gate electrode
160: interlayer insulating film 171: second signal line
172: third signal line 176: source electrode
177: drain electrode 180: interlayer insulating film

Claims (19)

a) a copolymer represented by the following formula (1);
b-1) oxime-based photoacid generators;
b-2) triazine-based photoacid generators;
c) an organic base; And
d) A positive photosensitive resin composition for a display device comprising a solvent:

(Formula 1)
In Formula 1, R ₁ is any one of acetal and ketal, and x + y + z = 1. The method of claim 1,
X is from 0.1 to 0.9,
Y is from 0.0 to 0.3,
And z is 0.1 to 0.9. The method according to claim 1,
Wherein the oxime-based photoacid generator comprises 3 to 20 parts by weight,
Wherein the triazine-based photoacid generator comprises 0.5 to 10 parts by weight of the triazine-based photoacid generator. The method of claim 1,
Wherein the copolymer comprises 100 parts by weight,
0.1 to 5 parts by weight of the organic base,
And a solid content of 50 to 90% by weight based on the total weight of the positive photosensitive resin composition. The method of claim 1,
Wherein the oxime-based photoacid generator is a positive photosensitive resin composition for a display device having a main absorption wavelength of 380 nm or less and a pH of 3.0 to 4.0. The method of claim 1,
Wherein the triazine-based photoacid generator is a positive photosensitive resin composition for a display device having a main absorption wavelength of 380 nm or more and a pH of 2.0 to 3.0. The method according to claim 1,
A positive photosensitive resin composition for a display device, which further comprises a melamine crosslinking agent and a silane coupling agent. Insulating substrate,
A thin film transistor located on the insulating substrate,
A first electrode connected to the thin film transistor,
A pixel defining layer located above the first electrode and partially exposing the first electrode,
An organic light-emitting layer positioned on the pixel defining layer, and
And a second electrode located on the organic light emitting layer,
Wherein the pixel defining layer comprises a positive photosensitive resin composition,
The positive photosensitive resin composition
a) a copolymer represented by the following formula (1);
b-1) oxime-based photoacid generators;
b-2) triazine-based photoacid generators;
c) an organic base; And
d) an organic light emitting display comprising a solvent:

(Formula 1)
In Formula 1, R ₁ is any one of acetal and ketal, and x + y + z = 1. 9. The method of claim 8,
X is from 0.1 to 0.9,
Y is from 0.0 to 0.3,
And z is 0.1 to 0.9. 9. The method of claim 8,
The positive photosensitive resin composition is a positive photosensitive resin composition,
Wherein the oxime-based photoacid generator comprises 3 to 20 parts by weight,
And 0.5 to 10 parts by weight of the triazine-based photoacid generator. 9. The method of claim 8,
The positive photosensitive resin composition is a positive photosensitive resin composition,
Wherein the copolymer comprises 100 parts by weight,
0.1 to 5 parts by weight of the organic base,
And a solvent so that the solid content is 50 to 90% by weight. 9. The method of claim 8,
The oxime-based photoacid generator has a main absorption wavelength of 380 nm or less and a pH of 3.0 to 4.0. 9. The method of claim 8,
Wherein the triazine-based photoacid generator has a main absorption wavelength of 380 nm or more and a pH of 2.0 to 3.0. 9. The method of claim 8,
A melamine crosslinking agent, and a silane coupling agent. A first insulating substrate,
A thin film transistor located on the first insulating substrate,
A pixel electrode connected to the thin film transistor,
A common electrode disposed to be insulated from the pixel electrode,
A second insulating substrate facing the first insulating substrate,
And a liquid crystal layer disposed between the first insulating substrate and the second insulating substrate,
Wherein at least one of the thin film transistor and the pixel electrode is formed using a positive photosensitive resin composition,
The positive photosensitive resin composition
a) a copolymer represented by the following formula (1);
b-1) oxime-based photoacid generators;
b-2) triazine-based photoacid generators;
c) an organic base; And
d) Display comprising solvent:

(Formula 1)
In Formula 1, R ₁ is any one of acetal and ketal, and x + y + z = 1. 16. The method of claim 15,
X is from 0.1 to 0.9,
Y is from 0.0 to 0.3,
And z is 0.1 to 0.9. 16. The method of claim 15,
In the positive photosensitive resin composition,
Wherein the oxime-based photoacid generator comprises 3 to 20 parts by weight,
Wherein the triazine-based photoacid generator comprises 0.5 to 10 parts by weight. 16. The method of claim 15,
Wherein the oxime-based photoacid generator has a main absorption wavelength of 380 nm or less and a pH of 3.0 to 4.0. 16. The method of claim 15,
Wherein the triazine-based photoacid generator has a main absorption wavelength of 380 nm or more and a pH of 2.0 to 3.0.

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