KR20160130040A - Apparatus for growing single crystal having enhanced temperature measuring accuracy - Google Patents

Apparatus for growing single crystal having enhanced temperature measuring accuracy Download PDF

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Publication number
KR20160130040A
KR20160130040A KR1020150061969A KR20150061969A KR20160130040A KR 20160130040 A KR20160130040 A KR 20160130040A KR 1020150061969 A KR1020150061969 A KR 1020150061969A KR 20150061969 A KR20150061969 A KR 20150061969A KR 20160130040 A KR20160130040 A KR 20160130040A
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KR
South Korea
Prior art keywords
crucible
temperature
window
single crystal
cleaning
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KR1020150061969A
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Korean (ko)
Inventor
이재석
정창원
전승안
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오씨아이 주식회사
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Priority to KR1020150061969A priority Critical patent/KR20160130040A/en
Publication of KR20160130040A publication Critical patent/KR20160130040A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

The present invention relates to a single crystal growth apparatus, and more particularly, to a single crystal growth apparatus capable of more accurately measuring the temperature of a crucible contained therein during a single crystal growth process.
The present invention relates to a crucible in which a seed jig is mounted on an upper portion of a raw material loading space forming a raw material loading space; A chamber body accommodating the crucible and having a temperature window at upper and lower portions thereof; A pyrometer for measuring the temperature of the crucible through the temperature window; A heat insulating material enclosing the crucible inside the chamber body and having a through hole in a temperature-sensing region; An induction heating coil surrounding the chamber body; And cleaning means for spraying a cleaning gas on the inner surface of the temperature-measuring window, wherein the cleaning means discharges the cleaning gas in a direction away from the temperature-side window.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a single crystal growing apparatus,

The present invention relates to a single crystal growth apparatus, and more particularly, to a single crystal growth apparatus capable of more accurately measuring the temperature of a crucible contained therein during a single crystal growth process.

In order to solve the limitations of the thermal properties of silicon semiconductors, research on new semiconductor materials having a wide band gap has been actively conducted.

Silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), and zinc oxide (ZnO) are the materials of next generation semiconductor devices. Among them, ingot growth technology is secured, heat resistance characteristics, heat conduction characteristics, Excellent silicon carbide (SiC) semiconductors have attracted attention.

In particular, silicon carbide has an excellent thermal conductivity of 4.6 W / cm ° C, and since the single crystal growth technology is the most stable in reality, industrial production technology is the most advanced as a substrate.

In order to grow such a single crystal of silicon carbide, PVT (physical vapor transport) is generally used. That is, first, a seed crystal made of silicon carbide is attached to a seed holder, and the raw material (silicon carbide powder) charged in the crucible is heated, and then the seed material is sublimated to form a single crystal Grow.

At this time, when a current is supplied to the induction coil in the growth apparatus, heat is transferred from the outside to the inside by radiating the crucible by the high frequency and copied.

Related literature is Korean Patent Laid-Open Publication No. 10-2013-0124023 (published on Nov. 13, 2013) entitled " Large diameter single crystal growth apparatus and growth method using the same. &Quot;

It is an object of the present invention to precisely measure a process temperature during operation of a single crystal growth apparatus by preventing contamination of a temperature window due to sublimated gaseous substances.

Another object of the present invention is to enable a more accurate process control by allowing the temperature of the seed definition back surface to be measured.

It is still another object of the present invention to provide a single crystal growth apparatus capable of preventing the seed crystal from being deformed by thermal stress.

In order to accomplish the above object, the present invention provides a method of manufacturing a crucible, comprising: a temperature window provided on a chamber body for accommodating a crucible; Cleaning means for spraying a cleaning gas on the inner surface of the temperature-measuring window, so that the cleaning gas is discharged in a direction away from the temperature-side window; And an exhaust pipe provided in the through hole formed in the heat insulating material surrounding the crucible.

The cleaning unit may include a gas supply unit for supplying a cleaning gas, and a spray nozzle for spraying the cleaning gas with the temperature window under the supply of the gas of the gas supply unit.

The cleaning unit may further include a discharge pipe for guiding the cleaning gas injected from the injection nozzle to be discharged in a direction away from the temperature window, wherein the discharge pipe may be formed integrally with the injection nozzle.

The exhaust pipe may have a flange that is in surface contact with the crucible, or the exhaust pipe may extend from the crucible.

And an induction heating means for surrounding the chamber body, wherein the exhaust pipe is made of a material heated by the induction heating means.

The crucible may include a crucible body forming a raw material loading space, and a crucible cover coupled to an upper portion of the crucible body and having through holes for receiving the seed crystal.

The crucible may further include a tube-shaped guide member, and the seed may be mounted on the guide member.

The crucible may further include a pressure ring for allowing the seed crystal to closely contact the guide member.

And a pyrometer for measuring the temperature of the crucible through the temperature window.

The single crystal growth apparatus according to the present invention can prevent the clogging of the through holes in the heat insulating material and prevent the temperature window from being contaminated by the sublimated vapor phase material so that the process temperature can be accurately measured.

Further, the single crystal growth apparatus according to the present invention can prevent the sublimated gaseous material from contaminating the heat insulating material, thereby making it possible to use the heat insulating material repeatedly.

In addition, the single crystal growth apparatus according to the present invention does not deform the seed crystal due to thermal stress, thereby reducing defects during single crystal growth.

1 is a cross-sectional view showing a structure of a single crystal growth apparatus according to a first embodiment of the present invention.
2 is a cross-sectional view showing a structure of a single crystal growing apparatus according to a second embodiment of the present invention.
3 is a cross-sectional view showing a structure of a single crystal growth apparatus according to a third embodiment of the present invention.
4 is a cross-sectional view illustrating a seed-defining rear surface protection structure according to a third embodiment of the present invention.
5 is a perspective view showing the cleaning means of the single crystal growing apparatus according to the embodiment of the present invention.
6 is a photograph showing the contamination state of the temperature window according to the cleaning means.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or preliminary meaning and the inventor shall properly define the concept of the term in order to describe its invention in the best possible way It should be construed in accordance with the meaning and concept consistent with the technical idea of the present invention. It should be noted that the embodiments described in the present specification and the configurations shown in the drawings are only the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention, It should be understood that various equivalents and modifications are possible.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a single crystal growth apparatus with improved temperature measurement performance according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view showing a structure of a single crystal growth apparatus according to a first embodiment of the present invention.

As shown, the single crystal growth apparatus according to an embodiment of the present invention includes a crucible 100, a chamber body 200, a heat insulating material 300, an induction heating means 400, a cleaning means 500, and a pyrometer , 600).

The crucible 100 forms a raw material loading space 102 and a seed crystal 105 is mounted on an upper portion of the raw material loading space 102. The crucible 100 is formed of a material that can be heated by the induction heating means 400 and may be formed of a graphite material.

In the case of growing a silicon carbide single crystal, silicon carbide powder is charged into the crucible 100 as a raw material 104, and silicon carbide seed crystals 105 are attached to the top of the crucible.

The crucible 100 includes a crucible body 110 forming a raw material charging space 102 and a crucible cap 120 coupled to an upper portion of the crucible body 110. In the illustrated embodiment, the seed crystal holder 122 is formed on the crucible cap 120 so that the seed crystal 105 is attached to the seed crystal holder 122.

The crucible 100 may be coated with a material having a melting point higher than the sublimation temperature of the raw material 104. [ When a graphite material is used as the material of the crucible 110, the material that can be applied is silicon (Si) and hydrogen (H) at a temperature at which the silicon carbide grows if the silicon carbide single crystal is grown. Is preferably used. For example, metal carbides or metal nitrides can be used. In particular, a mixture containing at least two of Ta, Ha, Nb, Zr, W and V and a carbide containing carbon may be applied. Further, a nitride containing at least two of Ta, Hf, Nb, Zr, W and V and nitrogen may be applied.

The chamber body 200 accommodates the crucible 100 and the induction heating means 400 is wrapped around the chamber body 200. The chamber body 200 includes a cylindrical side body 210 having upper and lower openings and an upper lid 220 and a lower lid 230 for closing upper and lower portions of the side body 210.

As a material of the side body 210, a quartz tube which is not affected by an electromagnetic field and is not induction-heated and has excellent heat resistance can be used.

The upper lid 220 and the lower lid 230 are provided with temperature measurement windows 225 and 235 for temperature measurement. The temperature-gated windows 225 and 235 are transparent materials through which visible light can be transmitted, and quartz glasses having excellent heat resistance can be used.

Particles generated in the single crystal growth process may be deposited in the temperature-gated windows 225 and 235. For example, particles such as silicon (Si), silicon carbide (SiC), and carbon (C) can be deposited on the temperature-side windows 225 and 235.

The heat insulating material 300 serves to fix the crucible 100 inside the chamber body 200 and to insulate the crucible 100. The heat insulating material 300 is formed to surround the outer surface of the crucible 100 and has through holes 310 and 320 at positions aligned with the temperature measurement windows 225 and 235.

The surface of the crucible 100 exposed by the through holes 310 and 320 becomes the temperature measuring region where the temperature is measured by the pyrometer 600.

As the heat insulating material 300, a soft felt material having excellent heat resistance can be used.

The induction heating means 400 may be a high frequency induction coil supplied with a high frequency current to inductively heat the crucible 100. When the crucible 100 is disposed inside the induction heating coil 400 and a high frequency current is supplied, an eddy current is generated in the crucible 100 and the crucible 100 is heated.

The cleaning means 500 is provided to prevent the temperature glazing window 225 from being contaminated by spraying the glazing gas with the temperature glazing window 225 so that the glazing gas has a flow in the direction away from the glare temperature window 225 Thereby preventing the cleaning gas from cleaning the surface of the temperature window 225 and preventing the gaseous material from approaching the temperature window 225 due to the flow of the cleaning gas in the direction away from the temperature window 225. [ Role.

An inert gas (argon, nitrogen, helium, etc.) may be used as the scrubber.

The pyrometer 600 is for measuring the temperature of the crucible 100 from the outside of the chamber body 200. The pyrometer 600 can use a radiation thermometer to measure the luminance temperature by observing the luminance with respect to the wavelength of the visible region among the radiant energy emitted from the object.

The pyrometer 600 measures the temperature of the crucible 100 through the temperature gates 225 and 235. If the gasses are attached to the temperature gates 225 and 235, the temperature can not be measured accurately. The present invention includes the above-described cleaning means 500 to improve the accuracy of the temperature measurement by keeping the temperature measurement window 225 in a clean state.

The temperature gates 225 and 235 are respectively provided in the upper and lower covers 220 and 230. In the case of the temperature window 225 provided in the upper cover 220, So that it is prevented by using the cleaning means 500. Although the cleaning device is not provided in the temperature measurement window 235 of the lower lid 230, which is less susceptible to contamination in the illustrated embodiment, the cleaning device may be provided in the temperature measurement window 235 of the lower lid 230 .

2 is a cross-sectional view showing a structure of a single crystal growing apparatus according to a second embodiment of the present invention.

The single crystal growth apparatus according to the second embodiment of the present invention is characterized in that it further includes an exhaust pipe 350 in the through hole 310 of the heat insulating material 300.

The through holes 310 and 320 of the heat insulating material 300 are formed in order to expose the surface of the crucible 100 to the pyrometer 600. The heat of the crucible 100 is transmitted through the upper through hole 310 And is discharged together with the sublimed vapor ma- terial.

When the silicon carbide is grown, the temperature inside the crucible 100 becomes high enough to decompose the silicon carbide into a gas. At this time, a part of the decomposed gaseous material is discharged from the crucible 100 through the gap of the crucible 100, do. Vapor deposition can occur if the temperature is lowered while these gaseous materials are moving.

Since the heat insulating material 300 is not heated by the induction heating coil 400, a soft felt material having a lower temperature than the crucible 100 and a soft felt material is used as the heat insulating material 300, The deposition is more easily performed because of the porous material, and the through hole 310 is clogged.

When the through hole 310 is clogged, the pyrometer 600 can not detect the wavelength of the visible region radiated from the surface of the crucible 100, making it impossible to accurately measure the temperature of the crucible 100.

The present embodiment is to improve this point and is characterized in that the through hole 310 is provided with an exhaust pipe 350 made of a material heated by an induction heating coil. The exhaust pipe 350 may be formed as an independent part and may be coupled to the through hole 310 or may be formed integrally with the crucible 120.

The exhaust pipe 350 may be formed of the same material as the crucible. In other words, the exhaust pipe 350 may be formed of a high-density graphite material capable of reducing the deposition of the vapor-phase material.

The exhaust pipe 350 prevents the gaseous substances from being adsorbed and serves to make the flow path of the gaseous material become the exhaust pipe 350 so that the gaseous material does not flow into the heat insulating material 300.

3 is a cross-sectional view showing a structure of a single crystal growth apparatus according to a third embodiment of the present invention.

The present embodiment is characterized in that the seed crystal 105 is mounted on the crucible so that the pyrometer 600 can more accurately measure the temperature of the seed crystal 105. [

Further, the present invention is intended to reduce the thermal stress applied to the seed crystal by mounting the seed crystal 105 on the crucible.

As shown in the figure, the crucible 100 of the single crystal growing apparatus according to the third embodiment of the present invention is characterized in that the crucible 130 is provided with a through hole 132 to receive the seed crystal 105.

1) and the seed crystal 105 (see FIG. 1) in the case where the seed crystal 105 is attached to the seed crystal holder (122 in FIG. 1) of the crucible cap The thermal stress is applied to the seed crystal 105. When thermal stress is applied to the seed crystal 105, the crystal crack probability increases.

The seed crystal 105 is not attached to the crucible cap 130 but mounted thereon so that thermal stress is not applied to the seed crystal 105 and the back surface of the seed crystal 105 is covered by the crucible cap 130 So that the pyrometer 600 can measure the temperature of the seed crystal 105 more accurately.

To this end, the crucible cap 130 according to the present embodiment provides a structure in which the seed crystal 105 is mounted. The feed passage of the seed pot 105 may be formed by a stepped end formed in the through hole 135 or by a guide member 140 provided inside. The stationary end may be formed at the lower end of the through hole 135 in the form of a step having an inner diameter narrower than the outer diameter of the seed crystal 105.

The seed ring 105 may further include a pressing ring 150 that fixes the seed crystal 105 so that the seed crystal 105 can be closely attached to the stationary end or the guide member 140.

The pressurizing ring 150 prevents the vapor phase material from leaking to the seed crystal 105 by making the gap between the seed crystal 105 and the stationary end or the guide member 140 closely.

The guide member 140 guides the raw material to be sublimed to the seed crystal 105. The guide member 140 has a tubular shape that surrounds the seed crystal 105. The inner shape of the tube is distant from the seed crystal 105 And is formed into a taper shape whose cross-sectional area is enlarged.

The guide member 140 is formed in a tube shape so that a hollow is formed therein. The hollow has the effect of reducing the heat capacity of the guide member 140. When the heat capacity of the guide member 140 is reduced, the surface temperature of the guide member 140 is increased.

When the hollow is formed in the guide member 140, the heat capacity of the guide member is reduced. When the heat capacity of the guide member 140 is reduced and the same amount of heat is introduced into the guide member 140, the surface of the guide member 140 is heated to a higher temperature .

Further, in this embodiment, a flange 355 is formed at the lower end of the exhaust pipe 350. The flange 355 is in contact with the crucible cover 130 to support the exhaust pipe 350 and serves to efficiently transfer the heat of the crucible 100 to the exhaust pipe 350.

When the temperature of the exhaust pipe 350 is low, the vapor material may solidify inside the exhaust pipe and clog the exhaust pipe 350. In this embodiment, the flange 355 is formed at the lower end of the exhaust pipe 350, Is conducted to the exhaust pipe so that the exhaust pipe 350 can maintain a high temperature.

In the crucible 100 according to the present embodiment, the seed crystal 105 has a structure in which the seed crystal 105 is not attached to the seed crystal holder but is mounted, There is a need to protect the backside of the device.

As a result of the sublimation, a single crystal grows and pyrolysis occurs at the backside of the seed crystal 105. If the backside of the seed crystal 105 is not protected, a pupil defect due to thermal decomposition occurs at the seed crystal backside. Such a pupil defect penetrates into the grown crystal as the crystal growth progresses, which adversely affects the crystal quality.

4 is a cross-sectional view illustrating a seed definition back surface structure according to a third embodiment of the present invention.

As shown in the figure, the seed surface protecting structure according to the present invention includes a photoresist layer 106 formed on the back surface of the seed crystal 105 and a graphite sheet 107 attached to the photoresist layer 106 ).

The photoresist layer 106 and graphite sheet 107 are intended to prevent the occurrence of pupil defects on the seed-defining surface.

In order to prevent the occurrence of a pupil defect, the photoresist layer 106 is preferably formed to a thickness of 1 to 100 μm, and the thickness of the graphite sheet 107 is preferably 0.1 mm or more.

The graphite sheet 107 may be directly attached to the back surface of the seed crystal 105. In this case, however, a portion where the seed crystal 105 and the graphite sheet 107 are not easily adhered may occur, A pupil defect may occur in a portion where the pupil is defective.

The ratio of the thickness of the graphite sheet 107 to the thickness of the seed crystal 105 (thickness of the graphite sheet / seed-defining thickness) is preferably 1.0 or less. The graphite sheet 107 adheres to the seed crystal 105, and when the thickness of the graphite sheet 107 becomes thick, the thermal stress applied to the seed crystal 105 increases. Therefore, the ratio of the thickness of the graphite sheet 107 to the thickness of the seed crystal 105 is preferably 1.0 or less.

(Comparative Example 1) in which only the photoresist layer was formed to protect the seed definition back surface (Comparative Example 2), and a state in which only the graphite sheet was attached in order to protect the seed definition back surface Comparative Example 3) In order to protect the seed definition back surface, a SiC ingot was grown in the state (Example) in which a photoresist layer was formed and a graphite sheet was adhered (Example), and the density of the pupil defect in the grown SiC ingot and the FWHM ) Were measured.

Table 1 shows the results of measurement of the density of the pupil defect density and the full width at half maximum in the Examples and Comparative Examples.

Pupil defect density
(ea / cm2) Full width, FWHM
(arcsec) Comparative Example 1 > 100 > 200 Comparative Example 2 20 ~ 30 100 to 150 Comparative Example 3 10-20 70-100 Example 0 to 1 30 to 50

In the case of Comparative Example 1, a very severe pore defect occurred as a whole in the grown crystal. The density of the pupil defect was 100 / cm < 2 > or more. The X-ray half-width full width (FWHM) value for determining the crystallinity of the grown crystal was 200 or more, and the quality was poor.

In the case of Comparative Example 2, as the growth progressed at a high temperature for a long time, damage of the photoresist layer occurred. The density of the pupil defects was on the order of about 20-30 / cm2. (FWHM) value of 100 to 150, which determines the crystallinity of the grown crystals, is not good quality

In the case of Comparative Example 3, a portion where the adhesion with the graphite sheet was not good occurred, and a pupil defect was intensively caused in some regions. The pupil defect density was about 10 to 20 / cm 2. The X-ray half-width (FWHM) value, which determines the crystallinity of the grown crystal, is 70 ~ 100,

In the case of the examples, there were few pupillary defects in the grown crystals. The density of the pupil defect was about 0 ~ 1 / cm2. The FWHM (Full FWHM) value for determining the crystallinity of the grown crystals was in the range of 30 to 50, and the crystal quality was much better than the comparative examples.

5 is a perspective view showing the cleaning means of the single crystal growing apparatus according to the embodiment of the present invention.

As shown in the figure, the cleaning unit 500 includes a gas supply unit (not shown) for supplying a cleaning gas from the outside of the chamber body, a gas supply unit connected to the gas supply unit via a supply pipe 510, (520) and a discharge pipe (530) for guiding the cleaning gas injected from the injection nozzle (520) to be discharged in a direction away from the temperature window.

The injection nozzle 520 is disposed in a surrounding manner around the temperature-measuring window and has a plurality of injection holes 522 for injecting the cleaning gas toward the temperature-measuring window.

The discharge pipe 530 is formed so as to surround the injection nozzle 520 so that the cleaning gas injected from the injection hole 522 can be discharged through the discharge pipe 530 without spreading to the surroundings.

The discharge pipe 530 and the injection nozzle 520 may be integrally formed.

The cleaning gas injected from the injection nozzle 520 collides with the surface of the temperature window to remove foreign substances on the surface of the temperature window and is discharged downward through the discharge pipe 530. Accordingly, And serves as an air curtain for blocking access to the measurement window.

6 is a photograph showing the contamination state of the temperature window according to the cleaning means.

(a) shows a state in which the cleaning means is not provided, (b) shows an inert gas jetted onto the surface of a temperature-measuring window, and (c) shows a state in which the cleaning means according to the present invention is applied.

In case of (a), it can be confirmed that foreign matter is adsorbed on the surface of the temperature window, and in case (b), it is confirmed that the adsorption of the foreign substance is absorbed locally only in the portion of the surface of the temperature window where the inert gas is injected I could.

In the case (c) in which the cleaning means of the present invention is applied, it can be confirmed that foreign matter adsorption does not occur in the temperature window.

This is because the inert gas collides with the surface of the temperature window and is then discharged in a direction away from the temperature window, thereby acting as an air curtain and blocking the foreign material from approaching the temperature window surface.

As described above, the single crystal growth apparatus according to the present invention includes a cleaning means for cleaning the surface of the temperature-measuring window and preventing the vapor-phase material from approaching the temperature-measuring window side, so that the temperature-measuring window can be kept clean during the process.

Accordingly, the present invention has the effect of solving the problem of temperature measurement error due to contamination of the temperature window and temperature measurement inconvenience.

In addition, the present invention provides an effect of preventing the through hole of the heat insulating material from being clogged by the vapor phase material by providing the exhaust pipe in the through hole of the heat insulating material.

Further, the present invention provides a structure in which a seed crystal is mounted on a crucible lid, so that it is possible to directly measure the seed crystal back temperature using a pyrometer, thereby enabling more accurate control of the process conditions.

On the other hand, the structure in which the seed crystal is mounted on the crucible cover also reduces the thermal stress applied to the seed crystal holder compared to the structure in which the seed crystal is attached to the seed crystal holder of the crucible cover, thereby reducing the probability of crystal cracking during single crystal growth.

It is to be understood that the above-described embodiments are to be considered in all respects as illustrative and not restrictive, and the scope of the present invention will be indicated by the appended claims rather than by the foregoing detailed description. It is intended that all changes and modifications that come within the meaning and range of equivalency of the claims, as well as any equivalents thereof, be within the scope of the present invention.

100: Crucible 102: Material loading space
105: seed crystal 106: photoresist layer
107: graphite sheet 110: crucible body
120: Crucible cover 130: Crucible cover
132: through hole 140: guide member
150: pressure ring 200: chamber body
210: side body 220: upper cover
230: lower cover 225, 235:
300: Insulation material 310, 320: Through hole
350: exhaust pipe 355: flange
400: induction heating coil 500: cleaning means
510: supply pipe 520: injection nozzle
522: injection hole 530: discharge pipe
600: pyrometer

Claims (11)

A side temperature window provided on the chamber body for accommodating the crucible;
Cleaning means for spraying a cleaning gas on the inner surface of the temperature-measuring window, so that the cleaning gas is discharged in a direction away from the temperature-side window; And
And an exhaust pipe provided in the through hole formed in the heat insulating material surrounding the crucible.
The method according to claim 1,
The cleaning means
A gas supply unit for supplying a cleaning gas;
And a spray nozzle which is supplied with the gas of the gas supply unit and injects the cleaning gas into the temperature measurement window.
3. The method of claim 2,
The cleaning means
And a discharge pipe for guiding the cleaning gas injected from the injection nozzle to be discharged in a direction away from the temperature-sensing window.
The method of claim 3,
Wherein the discharge pipe is integrally formed with the injection nozzle.
The method according to claim 1,
Wherein the exhaust pipe has a flange in surface contact with the crucible.
The method according to claim 1,
Wherein the exhaust pipe extends from the crucible.
The method according to claim 1,
Further comprising induction heating means for enclosing the chamber body,
Wherein the exhaust pipe is heated by the induction heating means.
The method according to claim 1,
The crucible
A crucible body for forming a raw material loading space,
And a crucible cover which is coupled to an upper portion of the crucible body and has a through hole through which seed crystals are held.
9. The method of claim 8,
The crucible further includes a tube-shaped guide member,
And the seed crystal is placed on the guide member.
10. The method of claim 9,
The crucible
Further comprising a pressure ring for allowing the seed crystal to be in close contact with the guide member.
The method according to claim 1,
And a pyrometer for measuring the temperature of the crucible through the temperature window.
KR1020150061969A 2015-04-30 2015-04-30 Apparatus for growing single crystal having enhanced temperature measuring accuracy KR20160130040A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101977365B1 (en) 2017-11-16 2019-05-10 한국세라믹기술원 The solution growth reactor for single crystal growth including that function for opening and closing the head of hot-zone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101977365B1 (en) 2017-11-16 2019-05-10 한국세라믹기술원 The solution growth reactor for single crystal growth including that function for opening and closing the head of hot-zone

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