KR20160125794A - Method of analyzing a resistive switching memory and device for analyzing resistive a switching memory - Google Patents

Method of analyzing a resistive switching memory and device for analyzing resistive a switching memory Download PDF

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Publication number
KR20160125794A
KR20160125794A KR1020150056758A KR20150056758A KR20160125794A KR 20160125794 A KR20160125794 A KR 20160125794A KR 1020150056758 A KR1020150056758 A KR 1020150056758A KR 20150056758 A KR20150056758 A KR 20150056758A KR 20160125794 A KR20160125794 A KR 20160125794A
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South Korea
Prior art keywords
resistance
change memory
analyzing
resistance change
impedance
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KR1020150056758A
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Korean (ko)
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정하빈
강병우
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포항공과대학교 산학협력단
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Priority to KR1020150056758A priority Critical patent/KR20160125794A/en
Publication of KR20160125794A publication Critical patent/KR20160125794A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H01L27/24—

Abstract

The present invention relates to a characteristic analysis method which can better understand a driving mechanism of a resistance variation memory and prevent the damage to the resistance variation memory during a characteristic analysis process, and an analysis apparatus used for the characteristic analysis method. According to the present invention, the characteristic analysis method of the resistance variation memory performs analysis after connecting a resistance with a certain resistance value between the resistance variation memory and the analysis apparatus in series.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a method and an apparatus for analyzing characteristics of a resistance change memory,

The present invention relates to a method for analyzing a characteristic of a resistance change memory and an apparatus for analyzing the characteristics of the resistance change memory. More specifically, the present invention can better understand the driving mechanism of the resistance change memory, And an analysis apparatus used in the characteristic analysis method.

The resistance change memory is a memory that uses the characteristic that the resistance change material changes according to the voltage condition. Unlike the next generation nonvolatile memory, since the memory operation is possible by the simple structure of the metal-resistance change material layer-metal, The process is simple and the process cost is low.

The resistance change material layer of the resistance change memory has two states, a low resistance stage (LRS) and a high resistance stage (HRS) depending on a voltage condition. By distinguishing the states, they operate as memories.

As a method of analyzing the degree of goodness or badness of the operating characteristics of the resistance change memory, an electrical analysis method of obtaining a voltage-current characteristic curve by grounding one of the electrodes of the resistance change memory and applying a voltage to the other electrode However, such an electrical analysis method requires repeated measurement many times due to measurement error or the like, and in this process, the resistance change memory may be deformed or destroyed.

The following Patent Document discloses a method for analyzing the characteristics of the resistance change memory through X-ray irradiation and analysis of the absorption spectrum thereof without using voltage application.

However, since the resistance change memory is very small in size, the driving mechanism is not fully defined. In order to increase and control the resistance change memory, it is necessary to analyze the characteristics other than the existing voltage-current curve or absorption spectrum.

Impedance can be used as an important parameter to define the characteristics of materials used to make electronic circuits, parts, and components, but is rarely used to characterize resistance change memories.

When measuring the impedance of a resistance change memory, the impedance measurement equipment is not compliant in its nature. Therefore, when applied to a resistance change memory having a generally low resistivity, a low resistance stage (LRS) The high current flows and can destroy the resistance change memory.

Korean Patent Publication No. 2011-0135664

It is an object of the present invention to provide a method of analyzing a characteristic of a resistance change memory capable of preventing breakdown of a resistance change memory in an analysis process as well as providing characteristics that can help understand the driving mechanism of the resistance change memory .

Another object of the present invention is to provide an analysis apparatus that can be used in the resistance change memory characteristic analysis method.

In order to solve the above-described problems, the present invention is characterized in that, in analyzing the resistance change memory by the analyzer, a resistance having a predetermined resistance value is serially connected between the resistance change memory and the analyzer, A resistance change memory characteristic analysis method is provided.

In addition, the analyzer may include a device capable of applying an alternating voltage whose frequency is changed, and the analyzer may be, for example, an impedance measuring device.

This makes it possible to measure the impedance and improve understanding of the drive mechanism of the resistance change memory.

Further, the range of the resistance may be determined by a current flowing from a device capable of applying an alternating voltage whose frequency is changed when the resistance-change memory is in a low resistance stage (LRS) The range may be such that the change memory is not destroyed.

Preferably, the resistance may range from 500 OMEGA to 2000 OMEGA. If less than 500 OMEGA, breakdown of the resistance change memory may occur due to high currents, and when the resistance change memory is over 2000 OMEGA, , LRS), the reliability of the measurement resistance decreases.

The analysis by the analyzer may further include the steps of: (a) measuring an impedance of the pre-forming stage before applying a voltage; (b) applying a positive voltage to the resistance- (LRS), and (c) applying a negative voltage to measure the impedance of the resistance change memory in a state of a high resistance stage (HRS).

The impedance measurement in the above steps (a) to (c) may be performed while changing the temperature. At this time, the range of the measurement temperature may be -40 ° C to 150 ° C.

According to another aspect of the present invention, there is provided an analysis apparatus comprising: an analysis apparatus capable of analyzing a predetermined characteristic of a resistance change memory; a probe connected to the analysis apparatus and contacting electrodes of the resistance change memory; And a resistor connected in series between the probes.

In addition, the analyzing apparatus may include a device capable of applying an alternating voltage whose frequency is changed.

In addition, the probe may include Pt or Au.

In addition, the range of the resistance disposed between the analyzer and the probe may be such that the resistance change memory is a device capable of applying an alternating voltage whose frequency is changed when the resistance value is in a low resistance stage (LRS) May be a range that prevents the resistance change memory from being destroyed by a current flowing from the resistance change memory, and may preferably be 500 OMEGA to 2000 OMEGA.

According to the analyzing method according to the present invention, by arranging the resistor between the analyzer and the resistance change memory, it is possible to prevent the high current from flowing from the analyzer and destroying the resistance change memory.

In addition, the analysis method according to the present invention makes it possible to perform electrochemical analysis which has not been analyzed in the resistance change memory conventionally, and it is possible to enhance the understanding of the resistance change mechanism of the resistance change memory.

According to the analyzing apparatus according to the present invention, the characteristic value of the resistance change memory such as the impedance can be easily obtained without destroying the resistance change memory.

1 schematically illustrates an analysis apparatus for analysis of a resistance change memory according to an embodiment of the present invention.
2 schematically shows the structure of the resistance change memory.
3 is a flow chart schematically illustrating an analysis process of a resistance change memory according to an embodiment of the present invention.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Hereinafter, the present invention will be described in detail with reference to the drawings attached to the present invention.

1 schematically illustrates an analysis apparatus for analysis of a resistance change memory according to an embodiment of the present invention.

As shown in the figure, the analyzer comprises an electrochemical analyzer 1, a microprobe 2 electrically connected to the electrode of the resistance-change memory to be analyzed and electrically connected to the electrochemical analyzer 1, And a resistor 3 connected between the micro-probe 2 and the micro-probe 2.

The electrochemical analyzer 1 is an apparatus for analyzing the resistance change memory by electrochemistry. For example, there is an impedance measuring apparatus capable of applying an alternating voltage whose frequency is changed.

In an embodiment of the present invention, an impedance measuring apparatus uses a company product such as Solatron or Ivium, which is capable of applying an AC voltage.

The microprobe 2 may be made of a conductive material such as platinum (Pt) or gold (Au). The microprobe 2 may be made of a metal having excellent electrical conductivity, The dimension may be of a dimension such that it can contact the electrode of the resistance change memory without interference.

In one embodiment of the present invention, a microprobe made of platinum (Pt) was used.

The resistor 3 is connected in series to the analyzer 1 in order to prevent the resistance change memory from being broken due to the high current flowing from the analyzer 1.

Since the resistance change memory has a very low resistance in the LRS, the element can be destroyed when a high current flows from the electrochemical analysis apparatus which is not compliant. Therefore, by reducing the current flowing through the series-connected resistors, can do.

The range of the resistance is not particularly limited as long as it can prevent destruction of the resistance change memory in the LRS, but it is preferably 500 to 2000 OMEGA. In one embodiment of the present invention, a resistance of 1000 OMEGA is used.

When a resistor of 1000Ω is connected in series, a current of 1mA or less is applied to the voltage of about 1V which can occur in the set of HfO x (0 <x <2), so that breakdown of the device can be prevented. Connect the prepared resistor to the electrochemical analysis equipment line and connect the microprobe. At this time, the microprobe is made of Pt. The microprobe is brought into contact with both ends of the electrode of the device.

2 schematically shows a structure of a resistance change memory used in an embodiment of the present invention.

2, the resistance-change memory includes a substrate 21, a first electrode 22 formed on the substrate, a resistance-variable layer 23 formed on the first electrode, a resistance-variable layer 23, And a second electrode 24 formed on the second electrode 24.

The substrate 21 is a silicon substrate.

The first electrode 22, platinum (Pt), iridium (Ir), gold (Au), ruthenium (Ru), iridium oxide (IrO 2), ruthenium oxide (RuO 2), titanium oxide (TiN) and tantalum Nitride (TaN), or a single layer or a plurality of layers including any one selected from the group consisting of nitride (TaN).

A silicon dioxide (SiO 2 ) layer, not shown in FIG. 2, may be formed on the first electrode 22, and a silicon dioxide layer having openings may be formed on the first electrode 22, And functions as a device isolation film for separation.

The resistance variable layer 23 may be made of an oxide having an oxygen vacancy such as MO x (where M is any one of transition metals such as Hf, Ta, mo, Nb, W, and Sb) x (0 <x <5/2) , MoO x (0 <x <3), NbO x (0 <x <5/2), WO x (0 <x <3) and SbO x (0 <x < 5/2) can be used.

The thickness of the resistance-change memory is preferably 10 nm to 30 nm because the resistance change characteristics may not be exhibited when the thickness is less than 10 nm or exceeds 30 nm.

In the embodiment of the present invention, a platinum (Pt) electrode layer is formed on a silicon substrate, a 10 nm thick HfO x resistance variable layer is formed on a platinum (Pt) electrode layer, and a platinum Pt) electrode layer is formed.

The second electrode 24 is platinum (Pt), iridium (Ir), gold (Au), ruthenium (Ru), iridium oxide (IrO 2), ruthenium oxide (RuO 2), titanium oxide (TiN) and tantalum nitride (TaN), or a single layer or a plurality of layers including any one selected from the group consisting of TaN.

3 is a flow chart schematically illustrating an analysis process of a resistance change memory according to an embodiment of the present invention.

As shown in FIG. 3, the analysis process of the device includes the steps of measuring the impedance of the pre-forming stage before applying the voltage, and applying a positive voltage to the resistance change memory so that the resistance change memory has a low resistance stage and LRS, and measuring the impedance of the resistance-change memory in a high resistance stage (HRS) state by applying a negative voltage.

In addition, the width in the preforming step and the resistance in the HRS can be adjusted to fall within the range of the measurable resistance of the electrochemical measuring equipment.

As the width increases and the area increases, the resistance formula R = ρ (l / A) (where R is the resistance of the device, ρ is the resistivity of the resistance changing material, l is the thickness of the resistance changing material, The resistance decreases.

In HRS, as the area increases, the number of filaments increases and the resistance may decrease.

In the step of measuring the impedance of the pre-forming stage before applying the voltage, the impedance is measured by changing the temperature from -40 ° C to 150 ° C. Through this process, the activation energy of the oxygen vacancy in the resistance change memory can be confirmed.

In the step of measuring the impedance at a low resistance stage (LRS) by applying the positive (+) voltage to the resistance change memory, a positive (+) voltage is applied to form an oxygen vacancy filament, The impedance is measured.

At this time, the impedance is measured by changing the temperature just before the forming.

In the step of measuring the impedance in the high resistance stage (HRS) state of the resistance change memory by applying the negative voltage, a negative voltage is applied to disconnect the oxygen public filament, Is measured.

At this time, the impedance is measured by changing the temperature just before the forming.

Through the measurement process described above, it is possible to measure the activation energy of the oxygen vacancies in the pre-forming stage of the resistance change memory, the LRS and the HRS state, and the conduction mechanism of the resistance change memory measured through the measurement results can be described in more detail I can understand.

Claims (10)

A method for analyzing characteristics of a resistance-change memory, comprising: connecting a resistance having a predetermined resistance value between the resistance-change memory and the analyzing device in series in analyzing the resistance-change memory using an analyzer; The method according to claim 1,
Wherein the analyzer comprises a device capable of applying an alternating voltage whose frequency is changed. 3. The method of claim 2,
Wherein the analyzing apparatus is an impedance measuring apparatus. 3. The method of claim 2,
Wherein the resistance range of the resistance is changed by a current flowing from a device capable of applying an alternating voltage whose frequency is changed when the resistance changing memory is in a low resistance stage (LRS) Wherein the range is a range in which the memory is not destroyed. 5. The method of claim 4,
Wherein the resistance range is 500 to 2000 OMEGA. 3. The method of claim 2,
(A) measuring an impedance of the pre-forming stage before applying a voltage;
(b) measuring the impedance at a low resistance stage (LRS) by applying a positive voltage to the resistance change memory;
(c) applying a negative voltage to measure an impedance at a high resistance stage (HRS) of the resistance change memory. The method according to claim 6,
Wherein the impedance measurement in the steps (a) to (c) is performed while changing the temperature. An analysis device capable of analyzing a predetermined characteristic of the resistance change memory,
A probe connected to the analyzing device and contacting an electrode of the resistance change memory,
And a resistor connected in series between the analyzer and the probe. 9. The method of claim 8,
Wherein the analyzer comprises a device capable of applying an alternating voltage whose frequency is changed. 9. The method of claim 8,
Wherein the probe comprises Pt or Au.
KR1020150056758A 2015-04-22 2015-04-22 Method of analyzing a resistive switching memory and device for analyzing resistive a switching memory KR20160125794A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190138472A (en) 2018-06-05 2019-12-13 포항공과대학교 산학협력단 Electrochemical analysis method of resistance change memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110135664A (en) 2010-06-11 2011-12-19 연세대학교 산학협력단 A property analysis method and manufacturing method of reram

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110135664A (en) 2010-06-11 2011-12-19 연세대학교 산학협력단 A property analysis method and manufacturing method of reram

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190138472A (en) 2018-06-05 2019-12-13 포항공과대학교 산학협력단 Electrochemical analysis method of resistance change memory device

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