KR20160112245A - Stacked structure of nano carbon material and hexagonal boron nitride for leading wire and interconnection of semiconductors - Google Patents
Stacked structure of nano carbon material and hexagonal boron nitride for leading wire and interconnection of semiconductors Download PDFInfo
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Abstract
The present invention relates to a nano-carbon material and a hexagonal boron nitride laminated structure for conducting wires and semiconductor element wirings, and also relates to a method for producing a nano-carbon material and a hexagonal boron nitride laminated structure for wires and semiconductor element wirings.
According to an embodiment of the present invention, there is provided a method of manufacturing a nano-carbon material and a hexagonal boron nitride layered structure for wire and semiconductor device wiring, comprising: transferring a nano-carbon material onto a substrate; Forming a patterned electrode on the transferred nanocarbon material; Forming an electron transport channel for connecting the transferred nanocarbon material to the electrode; And transferring hexagonal boron nitride to protect the nano-carbon material.
Description
The present invention relates to a nano-carbon material and a hexagonal boron nitride laminated structure for conducting wires and semiconductor element wirings, and also relates to a method for producing a nano-carbon material and a hexagonal boron nitride laminated structure for wires and semiconductor element wirings.
The conductors used to deliver electricity consist of a conductor in the middle and an insulating sheath surrounding the conductor. The most widely used materials for conventional conductors are conductors such as copper and aluminum. Alloys made of plated or mixed materials such as tin, silver, and nickel are used depending on the application. As the insulation coating, polymer materials such as polyvinyl chloride, polyethylene resin, polypropylene resin and nylon are mainly made up.
A variety of metals are used as conductors in the electrical conductors to transmit electricity. However, in the case of a conductor, electrons collide with defects of a phonon or a lattice when an electric current flows, and heat is generated due to this, which is called Joule-Heating.
When the temperature of the lead wire increases due to the joule heat, the vibration of the phonons and defects of the conductor becomes larger, which increases the resistance of the lead wire because it prevents the electrons from moving.
As the temperature increases, the resistance of the increasing conductor interferes with the flow of electrons, which is one of the major causes for lowering the efficiency. Therefore, many attempts have been made to improve this.
In addition, since the conductors inside the wire are rapidly oxidized at a temperature of 200 to 300 ° C or more, the increase in resistance and oxidation are a serious problem.
These problems of heat generation and oxidation are also problems to be solved in silicon-based semiconductor devices.
On the other hand, graphene, which is one of the nano-carbon materials in which a layer of carbon atoms constitutes a hexagonal lattice, has a characteristic of being transparent and bendable, as well as a very large carrier mobility, Or more. Therefore, it is one of materials which is very suitable to be applied as a conductor for conducting electricity in a wire and an interconnector of a semiconductor device.
In addition, hexagonal boron nitride is a material in a single layer of a hexagonal lattice of atoms such as nitrogen (N) and boron (B) like graphene (nano carbon material), and has transparent and flexible properties as well as lattice mismatch (lattice mismatch) is only 1.7%. Contrary to nano-carbon materials, it has non-conductive properties and is chemically stable. In addition, since it can maintain its shape even at a high temperature of about 1000 ° C., it is a material very suitable for use as a protective layer of nano-carbon materials.
The inventors of the present patent application have found that, when making interconnection in a silicon-based semiconductor device using a nano-carbon material, the temperature is increased through a hetero-layer structure formed by laminating hexagonal boron nitride, which is an insulating material for protecting the interconnection As a result, the resistance of nano-carbon materials is reduced by 90%, which is the first in the world.
In order to solve the problems described in the prior art, the inventors of the present invention have made a channel capable of transporting electrodes and electrons by transferring a nano-carbon material to an insulating substrate and by using a relatively simple photo-lithography process , And finally hexagonal boron nitride was transferred to realize a hetero-laminated structure of nano-carbon material and hexagonal boron nitride. Through such a laminated structure, the inventor of the present invention intends to provide an interconnection exhibiting a characteristic of decreasing resistance as the temperature increases.
According to an embodiment of the present invention, there is provided a method of manufacturing a nano-carbon material and a hexagonal boron nitride layered structure for wire and semiconductor device wiring, comprising: transferring a nano-carbon material onto a substrate; Forming a patterned electrode on the transferred nanocarbon material; Forming an electron transport channel for connecting the transferred nanocarbon material to the electrode; And transferring hexagonal boron nitride to protect the nano-carbon material.
A method of manufacturing a nano-carbon material and a hexagonal boron nitride layered structure for a conductor and a semiconductor device wiring according to a further embodiment of the present invention includes: transferring hexagonal boron nitride on a substrate; Transferring the nano-carbon material onto the transferred hexagonal boron nitride; Forming a patterned electrode on the transferred nanocarbon material; Forming an electron transport channel for connecting the transferred nanocarbon material to the electrode; And transferring hexagonal boron nitride to protect the nano-carbon material.
In this case, the step of forming the patterned electrode on the transferred nano-carbon material may include photo-lithography, electron beam evaporation, thermal evaporation, and lift-off, Or the like.
The step of forming the electron transport channel is characterized by using photolithography and oxygen plasma etching.
The nano-carbon material may be at least one of graphene, carbon nanotube (CNT), graphene oxide (GO), reduced graphene oxide (RGO), and nano crystalline graphene.
On the other hand, the substrate is an nonconductive substrate.
The nano-carbon material and the hexagonal boron nitride layered structure for a conductor and a semiconductor device wiring according to an embodiment of the present invention include a substrate; A nano-carbon material layer formed on the substrate; An electrode pattern formed on the nano-carbon material layer; And a hexagonal boron nitride layer covering the nano-carbon material layer.
A nano-carbon material and a hexagonal boron nitride layered structure for a conductor and a semiconductor device wiring according to a further embodiment of the present invention include a substrate; A first hexagonal boron nitride layer formed on the substrate; A nano-carbon material layer on the hexagonal boron nitride layer; An electrode pattern formed on the nano-carbon material layer; And a second hexagonal boron nitride layer covering the nano-carbon material layer.
In this case, the nano-carbon material may be at least one of graphene, carbon nanotube (CNT), graphene oxide (GO), reduced graphene oxide (RGO), and nano crystalline graphene And is a substrate.
The nano-carbon material and the hexagonal boron nitride laminated structure for conductor and semiconductor device wiring according to the present invention utilize a low-temperature and atmospheric pressure process and further reduce the cost of the process by replacing metal conductors inside the conductor with nano- Can be implemented.
In addition, there is an advantage that a nano carbon material and hexagonal boron nitride can be transferred to various non-silicon substrates, rather than a silicon-based substrate, to easily form a laminated structure. Also, the efficiency can be greatly increased by realizing a device in which the resistance is greatly reduced as the temperature increases.
FIGS. 1A and 1B show flowcharts of a method of manufacturing a nano-carbon material for a conductor and a semiconductor element wiring and a hexagonal boron nitride layered structure according to an embodiment of the present invention.
FIGS. 2A to 2D illustrate side views of a method of manufacturing a nano-carbon material for a wire and a semiconductor device wiring and a hexagonal boron nitride layered structure according to an embodiment of the present invention.
Fig. 3 shows a side view of a nano-carbon material for a conductor and a semiconductor element wiring and a hexagonal boron nitride laminated structure according to a further embodiment of the present invention.
4 is a perspective view of a nano carbon material for a conductor and a semiconductor device wiring and a hexagonal boron nitride laminated structure according to an embodiment of the present invention.
5 shows a perspective view of a nano-carbon material for a conductor and a semiconductor element wiring and a hexagonal boron nitride layered structure according to a further embodiment of the present invention.
FIG. 6 shows a change in resistance value due to an increase in temperature due to an increase in applied voltage of the laminated structure fabricated according to an embodiment of the present invention.
FIG. 7 is a graph illustrating a normalized resistance value of a stacked structure according to an exemplary embodiment of the present invention. Referring to FIG.
Various embodiments are now described with reference to the drawings, wherein like reference numerals are used throughout the drawings to refer to like elements. For purposes of explanation, various descriptions are set forth herein to provide an understanding of the present invention. It is evident, however, that such embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing the embodiments.
The following description provides a simplified description of one or more embodiments in order to provide a basic understanding of embodiments of the invention. This section is not a comprehensive overview of all possible embodiments and is not intended to identify key elements or to cover the scope of all embodiments of all elements. Its sole purpose is to present the concept of one or more embodiments in a simplified form as a prelude to the more detailed description that is presented later.
As described above, in the case of a conventional lead wire, when the temperature of the lead wire is increased due to a juxtaposition, the vibration of the phonons and defects of the conductor is further increased to increase the resistance of the lead wire. In order to solve the problem of the rapid oxidation of the conductors. These heat and oxidation problems are a major problem to be solved in silicon-based semiconductor devices.
In order to solve such a problem, the present invention attempts to realize a hetero-laminated structure of nano-carbon material and hexagonal boron nitride. Through such a laminated structure, the inventor of the present invention intends to provide an interconnection exhibiting a characteristic of decreasing resistance as the temperature increases.
FIGS. 1A and 1B show flowcharts of a method of manufacturing a nano-carbon material for a conductor and a semiconductor element wiring and a hexagonal boron nitride layered structure according to an embodiment of the present invention. The difference between FIGS. 1A and 1B is that in the case of FIG. 1A, the nano carbon material is covered with hexagonal boron nitride while the laminate structure is covered with the hexagonal boron nitride sandwich .
Hereinafter, FIG. 1A will be described first, and FIG. 1B will be described later, and description of the overlapping portions of FIGS. 1A and 1B will be omitted from the description of FIG. 1B.
Referring to FIG. 1A, a method of fabricating a nano-carbon material and a hexagonal boron nitride layered structure for a conductor and a semiconductor device wiring according to an embodiment of the present invention includes: (S 110) transferring a nano-carbon material onto a substrate; Forming a patterned electrode on the transferred nanocarbon material (S 120); Forming an electron transport channel (S 130) for connecting the transferred nanocarbon material to the electrode; And transferring (S 140) hexagonal boron nitride to protect the nano-carbon material.
In step S 110, the nano-carbon material is transferred onto the substrate. First, a substrate is prepared and the nano-carbon material is transferred onto the substrate. 2A shows a state in which the nano-
It is preferable to use an insulating substrate such as a silicon substrate such as SiO 2 , Si 3 N 4 , or SiC, a plastic polymer substrate such as PET, PEN, or PES, a flexible substrate such as PDMS, eco-flex A polymer substrate or the like is used.
The nano-carbon material is at least one of graphene, carbon nano tube, GO (graphene oxide), reduced graphene oxide (RGO), and nano crystalline graphene. The nano carbon material is separately grown and prepared, and then transferred onto the substrate. There is no particular limitation on the growth method of the nano-carbon material, and it is possible to grow using any known method.
In
The formation of such a patterned electrode is performed using at least one of a photo-lithography method, an electron beam evaporation method, a thermal evaporation method, and a lift-off method.
In step S 130, an electron transport channel for connecting the transferred nanocarbon material to the electrode is formed. The formation of the electron transport channel is formed using photolithography and oxygen plasma etching.
In step S 140, hexagonal boron nitride is transferred to protect the nano-carbon material. Hexavalent boron nitride has the characteristics of nonconductors as opposed to nano-carbon materials and is chemically stable. In addition, since it can maintain its shape even at a high temperature of about 1000 ° C., it is a material very suitable for use as a protective layer of nano-carbon materials.
1B shows a flow chart of the form in which hexagonal boron nitride (h-BN) is placed in the sandwich form above and below the nano-carbon material. As shown in FIG. 1B, the h-BN used as the protective layer can also be used under the graphene, and a sandwich structure is also possible. 3 shows a cross-sectional view of a laminated structure in the form of h-BN disposed in sandwich form.
The method for manufacturing a nano-carbon material and a hexagonal boron nitride layered structure for a conductor and a semiconductor device wiring according to a further embodiment of the present invention shown in FIG. 1B includes: (S 210) transferring hexagonal boron nitride from a substrate; Transferring the nano-carbon material onto the transferred hexagonal boron nitride (S 220); Forming a patterned electrode on the transferred nanocarbon material (S 230); Forming an electron transport channel (S 240) for connecting the transferred nanocarbon material to the electrode; And transferring the hexagonal boron nitride to protect the nano-carbon material (S 250).
The nano-carbon material and the hexagonal boron nitride layered structure for wires and semiconductor device wiring according to an embodiment of the present invention include a
The nano-carbon material and the hexagonal boron nitride layered structure for wires and semiconductor device wiring according to a further embodiment of the present invention include a
In the present invention, the above-described conductive wire, nano-carbon material for semiconductor device wiring, and hexagonal boron nitride laminated structure are implemented. The inventors of the present invention have found that such a laminated structure has a physical characteristic that a resistance of the nano-carbon material exhibiting semi-metal characteristics when electricity is increased decreases as the temperature increases, And a structure using hexagonal boron nitride, which is the same two-dimensional structure surrounding the wiring, as an insulating coating.
Hereinafter, the contents of the present invention will be further described with reference to specific embodiments.
[Example]
The inventors of the present invention have fabricated nano-carbon materials for wire and semiconductor device wiring and hexagonal boron nitride layered structure according to the same steps as described in FIG. 1A.
First, graphene is grown in a nano-carbon material by using copper foil as a catalyst, and the copper foil is etched with a solution of iron chloride (FeCl 3 ). Then, graphene obtained by a wet transfer method is applied to a non- 2 . It takes at least 20 minutes to completely remove the copper foil from the ferric chloride solution (FeCl 3 solution). Therefore, it is necessary to visually observe the remaining copper. If unremoved copper particles remain, this may cause degradation of the characteristics of the graphene device.
Next, an electrode was prepared to supply the graphene device (graphene wiring) using a negative photo-lithography process or an electron beam lithography process. The photoresist (PMMA in the case of E-beam lithography), which is a photoresist that reacts with ultraviolet rays, is spin-coated on the sample to uniformly coat the same on graphene, and then exposed to UV (electron beam in the case of E-beam lithography) Only the position where the electrode rises was partially developed using the current solution.
Then, titanium (Ti) and gold (Au) used as an electrode were deposited to a thickness of 10 nm or less and 50 nm or more, respectively, by using an electron beam evaporator or a thermal evaporator. Although gold is the most commonly used metal electrode, the adhesion between graphene and gold is very weak, so titanium or chromium, which is superior in adhesion to gold, is used as an intermediate layer. The order is titanium (TI) - gold (Au) deposition. When chromium and gold are used, chromium (Cr) - gold (Au) are deposited in order. At this time, the thickness of titanium should be within 10 nm to reduce the contact resistance. Thereafter, acetone is used to remove metals deposited on portions other than the power supply electrode. This process is referred to as lift-off, and the principle of dissolving photoresist and PMMA in acetone is used To remove the titanium (or chromium) -gold thin film on the portion other than the electrode.
Next, a dry etching method is used in which an oxide (O 2 ) plasma is used to remove graphene except for the graphene channel connected to the electrode. Since graphene is a structure in which carbon atoms are bonded in a single layer only on a plane, its thickness is very thin, about 0.35 to 0.4 nm. Therefore, when etching, it is necessary to know the proper amount of gas, pressure and etching time of the equipment . If not, you can do damage to where you do not want. The conditions of plasma used for graphene etching should be 5 sccm of oxygen, RF power of 20 W or more, etching time of 10 seconds or more, and the working pressure of the process should be less than 500 mTorr. After etching, the remaining photoresist remaining on the graphene channel was removed with acetone.
In addition, in order to form a graphene channel connected with the electrodes, selective exposure was performed using a positive photo-lithography (or electron beam lithography) process, and then partially developed using a developer.
Finally, hexagonal boron nitride (h-BN), which is a two-dimensional planar material having the same structure as graphene, was transferred onto the completed graphene wiring. Since h-BN was also synthesized from copper foil, it was transferred through a wet transfer method such as graphene.
This hexagonal boron bitride is used as a passivation layer for protecting graphene and an insulating layer for preventing contact with the outside. Over time, graphenes exposed to air become bound to oxygen atoms and -OH functional groups on the surface, which causes degradation of graphene performance. h-BN is a material having the same two-dimensional structure as graphene, and has three hexagonal structures of boron and nitrogen atoms. The characteristic is an insulator that differs from semi-metal graphene. Since the lattice mismatch with graphene is about 1.7%, it is the optimum material for covering the upper surface of graphene or wrapping graphene by sandwich structure.
FIG. 6 shows a change in resistance value due to an increase in temperature due to an increase in applied voltage of the laminated structure fabricated according to an embodiment of the present invention. When graphene interconnection is driven by applying a voltage bias after covering the upper part of the graphene with h-BN, heat is generated in the graphene by joule heating do. When the applied voltage is gradually increased, the temperature increases and the resistance value according to the temperature is measured. As shown in FIG. 6, it was confirmed that the resistance of graphene decreased with increasing temperature.
As the temperature of a typical metal increases, the resistance that impedes the flow of current increases, while the resistance of graphene decreases. This means that more current can be delivered when the same voltage is applied. In addition, when graphene is used as a wiring or a conductor of a semiconductor device, the ability to supply a larger amount of current due to a low resistance at a temperature generated by the joule heat can smoothly drive the device and process more information .
FIG. 7 is a graph illustrating a normalized resistance value of a stacked structure according to an exemplary embodiment of the present invention. Referring to FIG.
Referring to FIG. 7, when the temperature of the graphene device reaches 200 ° C or more, the resistance decreases by 90% from the reference point. This is much more noticeable than when graphene alone is used without h-BN, which means that h-BN must be used for graphene wires or wiring to achieve a greater effect.
The description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features presented herein.
Claims (10)
Forming a patterned electrode on the transferred nanocarbon material;
Forming an electron transport channel for connecting the transferred nanocarbon material to the electrode; And
And transferring the hexagonal boron nitride to protect the nano-carbon material.
A method for manufacturing a nanocarbon material and a hexagonal boron nitride laminated structure for wire and semiconductor device wiring.
Transferring the nano-carbon material onto the transferred hexagonal boron nitride;
Forming a patterned electrode on the transferred nanocarbon material;
Forming an electron transport channel for connecting the transferred nanocarbon material to the electrode; And
And transferring the hexagonal boron nitride to protect the nano-carbon material.
A method for manufacturing a nanocarbon material and a hexagonal boron nitride laminated structure for wire and semiconductor device wiring.
Wherein forming the patterned electrode on the transferred nanocarbon material comprises:
Characterized in that the film is formed using at least one of a photolithography method, an electron beam evaporation method, a thermal evaporation method, and a lift-off method.
A method for manufacturing a nanocarbon material and a hexagonal boron nitride laminated structure for wire and semiconductor device wiring.
Wherein forming the electron transport channel comprises:
Photolithography, and oxygen plasma etching.
A method for manufacturing a nanocarbon material and a hexagonal boron nitride laminated structure for wire and semiconductor device wiring.
Wherein the nano-carbon material is at least one of graphene, carbon nanotube (CNT), graphene oxide (GO), reduced graphene oxide (RGO), and nano crystalline graphene.
A method for manufacturing a nanocarbon material and a hexagonal boron nitride laminated structure for wire and semiconductor device wiring.
Characterized in that the substrate is an nonconductive substrate.
A method for manufacturing a nanocarbon material and a hexagonal boron nitride laminated structure for wire and semiconductor device wiring.
A nano-carbon material layer formed on the substrate;
An electrode pattern formed on the nano-carbon material layer; And
And a hexagonal boron nitride layer covering the nano-carbon material layer.
Nano - carbon materials and hexagonal boron nitride laminated structures for wire and semiconductor device wiring.
A first hexagonal boron nitride layer formed on the substrate;
A nano-carbon material layer on the hexagonal boron nitride layer;
An electrode pattern formed on the nano-carbon material layer; And
And a second hexagonal boron nitride layer covering the nano-carbon material layer.
Nano - carbon materials and hexagonal boron nitride laminated structures for wire and semiconductor device wiring.
Wherein the nano-carbon material is at least one of graphene, carbon nanotube (CNT), graphene oxide (GO), reduced graphene oxide (RGO), and nano crystalline graphene.
Nano - carbon materials and hexagonal boron nitride laminated structures for wire and semiconductor device wiring.
Characterized in that the substrate is an nonconductive substrate.
Nano - carbon materials and hexagonal boron nitride laminated structures for wire and semiconductor device wiring.
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| US10971451B2 (en) | 2018-07-24 | 2021-04-06 | Samsung Electronics Co., Ltd. | Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure |
| US11094538B2 (en) | 2018-10-01 | 2021-08-17 | Samsung Electronics Co., Ltd. | Method of forming graphene |
| US11149346B2 (en) | 2018-07-25 | 2021-10-19 | Samsung Electronics Co., Ltd. | Method of directly growing carbon material on substrate |
| US11180373B2 (en) | 2017-11-29 | 2021-11-23 | Samsung Electronics Co., Ltd. | Nanocrystalline graphene and method of forming nanocrystalline graphene |
| US11217531B2 (en) | 2018-07-24 | 2022-01-04 | Samsung Electronics Co., Ltd. | Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure |
| US11626282B2 (en) | 2019-04-30 | 2023-04-11 | Samsung Electronics Co., Ltd. | Graphene structure and method of forming graphene structure |
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| KR102023106B1 (en) | 2017-02-20 | 2019-09-20 | 광운대학교 산학협력단 | Method for manufacturing spin coating based high quality solution-processed boron nitride thin film and its application in electronic devices |
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| US11626282B2 (en) | 2019-04-30 | 2023-04-11 | Samsung Electronics Co., Ltd. | Graphene structure and method of forming graphene structure |
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