KR20160107943A - Method for Fabricating Film Touch Sensor - Google Patents

Method for Fabricating Film Touch Sensor Download PDF

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Publication number
KR20160107943A
KR20160107943A KR1020150031569A KR20150031569A KR20160107943A KR 20160107943 A KR20160107943 A KR 20160107943A KR 1020150031569 A KR1020150031569 A KR 1020150031569A KR 20150031569 A KR20150031569 A KR 20150031569A KR 20160107943 A KR20160107943 A KR 20160107943A
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South Korea
Prior art keywords
film
layer
coating layer
touch sensor
silica
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KR1020150031569A
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Korean (ko)
Inventor
김용환
윤억근
이상웅
조수호
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동우 화인켐 주식회사
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Priority to KR1020150031569A priority Critical patent/KR20160107943A/en
Publication of KR20160107943A publication Critical patent/KR20160107943A/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Materials Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to a method of manufacturing a film touch sensor, and more particularly, to a method of manufacturing a film touch sensor by forming a silica (SiOx) coating layer on at least one surface of a carrier film. And forming a separation layer, a first protective layer, and an electrode pattern layer on the carrier film on which the silica (SiOx) coating layer is formed, so that the carrier film maintains an appropriate hardness, The present invention relates to a method of manufacturing a film touch sensor in which a defect rate of a product can be remarkably reduced because deformation does not occur in the film itself, and the process efficiency is improved by reusing the carrier film.

Description

TECHNICAL FIELD [0001] The present invention relates to a method for manufacturing a film touch sensor,

The present invention relates to a method of manufacturing a film touch sensor.

There have been attempts to introduce a touch input method into a wider variety of electronic devices while the touch input method is being watched as a next generation input method. Accordingly, research and development on a touch sensor capable of being applied to various environments and capable of accurate touch recognition are actively performed have.

For example, in the case of an electronic device having a touch-type display, an ultra-thin flexible display which achieves light weight, low power and improved portability has been attracting attention as a next generation display, and development of a touch sensor applicable to such a display has been required.

Flexible display means a display made on a flexible substrate that can bend, bend or twist without loss of properties, and technology development is underway in the form of flexible LCDs, flexible OLEDs, and electronic paper.

In order to realize a thin film structure in such a flexible display, a flexible thin film is formed on the carrier film, and a conductive pattern layer or the like is formed on the carrier film, and after the laminating process of the upper layer is completed, And removing the film from the top laminate. Here, it is preferable that the carrier film maintains a certain strength so that the upper lamination process can be easily performed.

On the other hand, since each of the structures constituting the flexible display has appropriate flexibility, the roll-to-roll process can be applied during the manufacturing process to further improve the efficiency in the process. In this case, An electrode pattern layer forming step and the like are performed.

However, wrinkles or curls may occur in the carrier film by a continuous roll-to-roll process. In this case, it is difficult to carry out the upper lamination process and the film can not be used for regeneration.

Korean Patent Publication No. 2014-0020602

It is an object of the present invention to provide a method of manufacturing a film touch sensor in which deformation of a carrier film during a process is reduced, and process efficiency and process uniformity are improved.

It is another object of the present invention to provide a method of manufacturing a film touch sensor in which the defect rate of a product is remarkably reduced.

1. forming a silica (SiOx) coating layer on at least one side of a carrier film; And

And forming an isolation layer, a first protective layer, and an electrode pattern layer on the carrier film on which the silica (SiOx) coating layer is formed.

2. The method of claim 1, wherein the silica coating layer is formed by plasma deposition.

3. The method of claim 2, wherein the plasma deposition is performed using TEOS (Tetra-ethoxysilane) based monomer.

4. The method of claim 2, wherein the plasma deposition is performed at a frequency of 13 to 14 MHz.

5. The method of claim 2, wherein the plasma deposition is performed at a rate of 8 to 12 nm / sec.

6. The method of manufacturing a film touch sensor according to 1 above, wherein the thickness of the silica coating layer is 60 to 100 nm.

7. The method of manufacturing a film touch sensor according to 1 above, wherein the silica coating layer has a hardness of 2 to 3H.

8. The method of manufacturing a film touch sensor according to claim 2, wherein the plasma deposition step comprises forming a first silica coating layer on the lower portion of the carrier substrate and forming a second silica coating layer on the carrier substrate.

9. The method of manufacturing a film touch sensor according to claim 8, wherein the first silica coating layer and the second silica coating layer have different thicknesses.

10. The carrier film according to 1 above, wherein the carrier film is at least one selected from the group consisting of a polyethylene terephthalate (PET) film, a triacetylcellulose (TAC) film, a polycarbonate (PC) film, a polyamide film, a polyimide film, , A cycloolefin-based (COP) film, and an olefin-based film.

11. The method of manufacturing a film touch sensor according to claim 1, further comprising forming a second protective layer on the first protective layer on which the electrode pattern layer is formed.

12. The method of claim 11, wherein the second passivation layer is selected from the group consisting of a substrate, a passivation layer, and an adhesive layer.

13. The method of manufacturing a film touch sensor according to claim 11, further comprising: attaching a base film on the second protective layer through an adhesive.

14. The method of manufacturing a film touch sensor according to 13 above, wherein the base film is a polarizing plate or a transparent film.

15. The method of manufacturing a film touch sensor according to claim 1, further comprising peeling the carrier substrate from the upper laminate including the separation layer, the first protective layer, and the electrode pattern layer.

16. The method of manufacturing a film touch sensor as recited in 15 above, further comprising a step of re-forming a silica coating layer on at least one side of the carrier film after said peeling step.

17. The method of any one of claims 1 to 16, wherein all of the steps are performed in a roll-to-roll process.

The method of manufacturing a film touch sensor of the present invention can significantly reduce deformation of the carrier film itself during the process by using a carrier film having a silica coating layer formed thereon.

The method of manufacturing the film touch sensor of the present invention enables the carrier film to be recycled, and thus the process efficiency is excellent.

The manufacturing method of the film touch sensor of the present invention is excellent in uniformity in the process because it is performed by a roll-to-roll process.

The method of manufacturing a film touch sensor of the present invention can significantly reduce the defective rate of a product.

The present invention relates to a method of manufacturing a film touch sensor, and more particularly, to a method of manufacturing a film touch sensor by forming a silica (SiOx) coating layer on at least one surface of a carrier film. And forming a separation layer, a first protective layer, and an electrode pattern layer on the carrier film on which the silica (SiOx) coating layer is formed, so that the carrier film maintains an appropriate hardness, The present invention relates to a method of manufacturing a film touch sensor in which a defect rate of a product can be remarkably reduced because deformation does not occur in the film itself, and the process efficiency is improved by reusing the carrier film.

Flexible Displays All of the configurations that make up the display are moderately flexible and can be manufactured in a roll-to-roll process to improve process efficiency. However, wrinkles and curls are easily generated in the carrier film by the continuous roll-to-roll process. In this case, it is difficult to carry out the lamination process of the upper electrode pattern layer and the like, there was.

Accordingly, the method of manufacturing a film touch sensor according to the present invention solves this problem by forming a silica (SiOx) coating layer on the carrier film, while maintaining the flexibility of the carrier film and securing an appropriate hardness.

Hereinafter, embodiments of the present invention will be described in detail.

First, a silica (SiOx) coating layer is formed on at least one surface of the carrier film.

The carrier film according to the present invention is preferably peeled off after a process such as formation of an electrode pattern layer for realizing a film touch sensor is performed on the top, and has appropriate flexibility to be suitable for a roll-to-roll process, It is more preferable that a material having little influence on heat or chemical treatment is applied.

The type of the carrier film usable in the present invention is not particularly limited, and examples thereof include a polyethylene terephthalate (PET) film, a polyethylene (PE) film, a polypropylene (PP) film, a polymethylmethacrylate Based film, polyimide-based film, polyarylate-based film, cycloolefin-based (COP) film, olefin-based film, and the like are applied And it is preferable to use a film which is subjected to a surface treatment (UV / AP plasma) in which a silica coating layer is formed in order to improve adhesion with a silica (SiOx) coating layer.

The silica (SiOx) coating layer according to the present invention is formed to provide an appropriate strength to a carrier film to suppress deformation of the film in a manufacturing process, and particularly to facilitate a roll-to-roll process. At least on one side.

The method of forming the silica (SiOx) coating layer according to the present invention is not particularly limited, but may be formed by plasma deposition in terms of thinning and improvement in uniformity.

The method of forming a silica (SiOx) coating layer by plasma deposition according to the present invention may be applied without any particular limitations as long as it is a method commonly practiced in the art. For example, it may be performed by using TEOS (tetra-ethoxysilane) .

In the plasma deposition process according to the present invention, additives such as hexamethyldisilazane may be used in addition to the TEOS (tetra-ethoxysilane) monomer as needed.

The plasma deposition may be performed at a frequency of 13 to 14 Hz. When the deposition is performed under the above conditions, the deposition proceeds stably and the uniformity of the silicon coating layer can be further improved.

In addition, the plasma deposition can be performed at a rate of 8 to 12 nm / sec. When the deposition is performed under the above conditions, deposition can be performed stably and uniformity of the silicon coating layer can be further improved.

After the plasma deposition process is completed, a heat drying process may be further performed to cure the coating film, and the process may be performed at 200 to 240 ° C for 20 to 60 minutes. When the heating and drying process is performed in the above range, the deposited silica (SiOx) coating layer can achieve an appropriate strength, and curling of the carrier substrate in a continuous roll-to-roll process can be significantly reduced.

The silica (SiOx) coating layer according to the present invention may be formed to have a thickness of 60 to 100 nm by the plasma deposition process, and preferably a thickness of 70 to 90 nm. When the thickness is within the above-mentioned range, the strength of the carrier film can be ensured and flexibility can be realized together, so that the roll-to-roll process can be more easily applied. On the other hand, the thickness of the silica coating layer may be realized by controlling the flow rate of oxygen (Oxygen) at the time of plasma deposition.

The silica (SiOx) coating layer according to the present invention may be formed to have a hardness of 2 to 3H by the plasma deposition process, preferably a hardness of 2 to 2.5H. The strength suitable for use as a carrier film having the above hardness range can be ensured and flexibility can also be realized, so that the roll-to-roll process can be more easily applied.

According to another embodiment of the present invention, the silica (SiOx) coating layer may be formed on both sides of the carrier substrate. For example, in the plasma deposition step, a first silica coating layer may be formed on the lower portion of the carrier substrate, And forming a second silica coating layer on the carrier substrate

In this case, the thicknesses of the first silica coating layer and the second silica coating layer may be different from each other. For example, it is more preferable that the silica coating layer at the portion where the curl is generated in the reverse direction is thicker.

Then, a separation layer, a first protective layer, and an electrode pattern layer are formed on the carrier film on which the silica (SiOx) coating layer is formed.

The separating layer according to the present invention is a layer formed for separating from the carrier film and serves as a layer for protecting the electrode pattern layer by covering the electrode pattern layer together with the first protective layer to be described later.

The separating layer may be a polymer organic film, and examples thereof include a polyimide-based polymer, a poly vinyl alcohol-based polymer, a polyamic acid-based polymer, a polyamide-based polymer, a polyethylene based polymers such as polyethylene, polystyrene-based polymers, polynorbornene-based polymers, phenylmaleimide copolymer-based polymers, polyazobenzene-based polymers, polyphenylenephthalamide- Based polymer, a polyester-based polymer, a polymethyl methacrylate-based polymer, a polyarylate-based polymer, a cinnamate-based polymer, a coumarin-based polymer, a phthalimidine a phthalimidine-based polymer, a chalcone-based polymer, and an aromatic acetylene-based polymer. However, It is not. These may be used alone or in combination of two or more.

It is preferable that the separating layer is easily peeled off from the carrier film having the silicon coating layer and is not peeled off from the first protective layer which will be described later when peeling off.

The method of forming the separation layer according to the present invention is not particularly limited, and examples of the method include a slit coating method, a knife coating method, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, Such as wire bar coating method, dip coating method, spray coating method, screen printing method, gravure printing method, flexo printing method, offset printing method, ink jet coating method, dispenser printing method, nozzle coating method, capillary coating method For example, a method known in the art.

After the separation layer is formed by the above-described method, an additional curing process can be further carried out.

The curing method of the separating layer is not particularly limited, and both of the above two methods can be used by photo-curing or thermosetting. The order of the photo-curing and the thermal curing is not particularly limited.

As the curing condition, for example, in the case of thermosetting, it can be carried out at 50 to 300 ° C for 1 minute to 60 minutes, preferably 100 to 200 ° C for 5 to 30 minutes. In the case of photo-curing, UV irradiation at 0.01 to 10 J / cm 2 can be performed for 1 second to 500 seconds, preferably UV irradiation at 0.05 to 1 J / cm 2 for 1 second to 120 seconds, but the present invention is not limited thereto .

Next, a step of forming a first protective layer on the isolation layer is performed.

The first protective layer protects the electrode pattern layer by covering the electrode pattern layer to be described later as in the case of the separation layer and prevents the separation layer from being exposed to the etchant for forming the electrode pattern layer during the manufacturing process of the film touch sensor of the present invention .

As the first protective layer, a polymer known in the art can be used without limitation, and for example, it can be made of an organic insulating film.

The first passivation layer may cover at least a part of the side surface of the isolation layer so as to minimize the exposure of the side surface of the isolation layer to the etchant during the patterning process of the patterns to be described later. The first protective layer preferably covers the entire side surface of the separation layer in terms of completely blocking the exposure of the side surface of the separation layer.

The method of forming the first protective layer is not particularly limited, and the same method as the method of forming the separation layer can be used.

Thereafter, an electrode pattern layer is formed on the first protective layer.

As the electrode pattern layer, any conductive material may be used without limitation, and examples thereof include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), gallium zinc oxide (ITO-Ag-ITO), indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), indium zinc tin oxide- Metal oxides selected from the group consisting of silver-indium zinc tin oxide (IZTO-Ag-IZTO) and aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Metals selected from the group consisting of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo) and APC; Nanowires of metals selected from the group consisting of gold, silver, copper and lead; Carbon-based materials selected from the group consisting of carbon nanotubes (CNT) and graphene; And a conductive polymer material selected from the group consisting of poly (3,4-ethylenedioxythiophene) (PEDOT) and polyaniline (PANI). These may be used alone or in combination of two or more.

The electrode pattern layer may be formed in an appropriate shape according to the requirements of the electronic apparatus to which it is applied. For example, when applied to a touch screen panel, the electrode pattern may be formed of two kinds of electrode patterns, that is, an electrode pattern for sensing the x coordinate and an electrode pattern for sensing the y coordinate. However, the present invention is not limited thereto.

The unit patterns of the electrode pattern layer may be polygonal patterns having a triangular shape, a tetragonal shape, a pentagonal shape, a hexagonal shape, or a hexagonal shape, for example.

In addition, the electrode pattern may be a regular pattern. A rule pattern means that the pattern form has regularity. For example, the unit patterns may include, independently of each other, a mesh shape such as a rectangle or a square, or a pattern such as a hexagon.

In addition, the electrode pattern may be an irregular pattern. The irregular pattern means that the shape of the pattern does not have regularity.

In the electrode pattern, the touch sensing pattern may have a network structure. In the case of having a network structure, since signals are sequentially transmitted to adjacent patterns in contact with each other, a pattern having high sensitivity can be realized.

The method for forming the electrode pattern is not particularly limited, and for example, a step of forming a film by applying a conductive compound may be performed first. The film formation step may be formed by various thin film deposition techniques such as physical vapor deposition (PVD) and chemical vapor deposition (CVD). For example, it may be formed by reactive sputtering, which is an example of physical vapor deposition, but is not limited thereto.

Thereafter, a step of forming a photoresist layer on the upper surface of the conductive compound film may be performed to form a desired pattern.

The photosensitive resin composition for forming the photoresist layer is not particularly limited, and a photosensitive resin composition commonly used in the art can be used.

The photosensitive resin composition is coated on a film made of the conductive compound and then heated and dried to remove a volatile component such as a solvent to obtain a smooth photoresist layer.

The photoresist layer thus obtained is irradiated with ultraviolet rays through a mask for forming a desired pattern (exposure). At this time, it is preferable to use an apparatus such as a mask aligner or a stepper so as to uniformly irradiate a parallel light beam onto the entire exposed portion and accurately align the mask and the substrate. When ultraviolet light is irradiated, the site irradiated with ultraviolet light is cured.

The ultraviolet rays may be g-line (wavelength: 436 nm), h-line, i-line (wavelength: 365 nm), or the like. The dose of ultraviolet rays can be appropriately selected according to need, and the present invention is not limited thereto.

When the photoresist layer which has been cured is brought into contact with a developing solution to dissolve and develop the non-visible portion, a desired pattern can be obtained.

The developing method may be any of a liquid addition method, a dipping method, and a spraying method. Further, the substrate may be inclined at an arbitrary angle during development.

The developer is usually an aqueous solution containing an alkaline compound and a surfactant, and can be used without any particular limitation as long as it is commonly used in the art.

Thereafter, an etching process may be performed to form a conductive pattern according to the photoresist pattern.

The etchant composition used in the etching process is not particularly limited, and an etchant composition commonly used in the art may be used, and a hydrogen peroxide etchant composition may be preferably used.

Through the etching process, a conductive pattern of a desired shape can be formed.

According to another embodiment of the present invention, the method may further include forming a second protective layer on the first protective layer.

The second protective layer may itself serve as a substrate and serve as a passivation layer. In addition, corrosion of the electrode pattern layer can be prevented, and the surface can be planarized to suppress generation of minute bubbles when adhered to the base film. It can also serve as an adhesive layer.

The second protective layer may be formed of a polymer, an adhesive, or an adhesive material having the same material as that of the first protective layer, and the same method as the first protective layer may also be applied.

In addition, the present invention may further include a step of attaching a base film on the second protective layer.

As the base film, a transparent film made of a material widely used in the art can be used without limitation, and examples thereof include cellulose esters (e.g., cellulose triacetate, cellulose propionate, cellulose butyrate, cellulose acetate propionate , And nitrocellulose), polyimides, polycarbonates, polyesters (e.g., polyethylene terephthalate, polyethylene naphthalate, poly-1,4-cyclohexanedimethylene terephthalate, polyethylene 1,2- 4'-dicarboxylate and polybutylene terephthalate), polystyrenes (e.g. syndiotactic polystyrenes), polyolefins (e.g. polypropylene, polyethylene and polymethylpentene), polysulfone, polyethersulfone, poly Polyether-imide, polymethylmethacrylate, polyetherketone, poly Polyvinyl alcohol, polyvinyl alcohol, and polyvinyl chloride, or a mixture thereof.

Further, the transparent film may be an isotropic film or a retardation film.

Nx and ny are the main indices of refraction in the film plane, nz is the refractive index in the film thickness direction, d is the film thickness) is 40 nm or less, and 15 nm And the retardation in the thickness direction (Rth, Rth = [(nx + ny) / 2-nz] xd) is from -90 nm to +75 nm, preferably -80 nm to +60 nm, desirable.

The retardation film is a film produced by the uniaxial stretching, biaxial stretching, polymer coating and liquid crystal coating method of a polymer film, and is generally used for improving the viewing angle of the display, improving the color feeling, improving the light leakage, do.

In addition, a polarizing plate may be used as the base film.

The polarizing plate may be one having a polarizer protective film attached on one side or both sides of a polyvinyl alcohol polarizer.

Further, a protective film may be used as the base film.

The protective film may be a film including an adhesive layer on at least one side of a film made of a polymer resin, or a self-adhesive film such as polypropylene, and may be used for protecting the surface of the touch sensor and improving the process precision.

The light transmittance of the base film is preferably 85% or more, and more preferably 90% or more. The haze value of the base film measured according to JIS K7136 is preferably 10% or less, and more preferably 7% or less.

The thickness of the base film is not limited, but is preferably 30 to 150 占 퐉, and more preferably 70 to 120 占 퐉.

When the second protective layer serves as a substrate or passivation layer, the base film may be adhered to the second protective layer through an adhesive.

The base film can be attached under pressure, and the pressure range to be applied is not particularly limited, and can be, for example, 1 to 200 kg / cm 2 , preferably 10 to 100 kg / cm 2 .

In order to improve the adhesion between the base film and the second protective layer at the time of adhering the base film, the surface to which the base film is adhered is subjected to surface treatment such as corona treatment, flame treatment, plasma treatment, ultraviolet ray irradiation, primer coating treatment, saponification treatment Can be performed.

Thereafter, the carrier film is peeled from the upper laminate including the separation layer, the first protective layer and the electrode pattern layer.

The separating layer remains on the film touch sensor side even after the peeling, so that it can serve as a coating for protecting the electrode pattern layer together with the first protective layer.

According to another embodiment of the present invention, it is possible to further include the step of re-forming the silica coating layer on at least one side of the carrier film after the peeling step.

The above-described effects can be achieved even when the carrier film is reused by compensating for the occurrence of microcracks or peeling off of the silica coating layer during the process of reformation of the silica coating layer.

The manufacturing process of the film touch sensor according to the present invention can be performed in a roll-to-roll process, and as described above, the roll-to-roll process can be performed So that the efficiency of the process can be further improved.

Example  And Comparative Example

(One) Example  One

A deposition gas containing TEOS was plasma-deposited at a rate of 10 MHz / sec at a rate of 10 MHz to form a first silica coating layer having a thickness of 80 nm on the carrier film formed of the olefin resin. Plasma depositing To form a second silica coating layer having a thickness of 80 nm, followed by heating and drying at 240 캜 for 60 minutes.

Thereafter, the composition for forming the separation layer was spin-coated, followed by heating and drying at 150 DEG C to form a separation layer.

Thereafter, the composition for forming the first protective layer was coated on the separation layer, and the first protective layer was formed by heating and drying at 180 ° C.

Next, a conductive compound (ITO) was deposited on the first passivation layer through a chemical vapor deposition (CVD) method. Thereafter, the photosensitive resin composition was spin-coated on the film and pre-baked at 90 DEG C for 125 seconds using a hot plate. After the prebaked substrate was cooled to room temperature, light was emitted at an exposure dose of 60 mJ / cm 2 (based on 365 nm) using an exposure apparatus (UX-1100SM; Ushio Co., Ltd.) with a distance of 150 μm from the quartz glass photomask Respectively. After light irradiation, the coating film was immersed in an aqueous developing solution containing 0.12% of a nonionic surfactant and 0.04% of potassium hydroxide at 25 캜 for 60 seconds and developed. After washing with water, post-baking was performed in an oven at 230 캜 for 30 minutes.

Then, the photoresist pattern was etched to form an electrode pattern layer using an etchant composition prepared by mixing 1 g of 40% hydrogen peroxide and 2 g of ammonium bifluoride.

Thereafter, a base film was attached to the upper part of the electrode pattern layer with an acrylic adhesive, and the carrier substrate was peeled to produce a film touch sensor. All of the above processes were performed by a roll-to-roll process.

(2) Example  2

A film touch sensor was prepared in the same manner as in Example 1 except that the thickness of the first silica coating layer was 100 nm and the thickness of the second silica coating layer was 60 nm.

(3) Example  3

A film touch sensor was prepared in the same manner as in Example 1, except that the second silica coating layer was not formed.

(4) Comparative Example  One

A film touch sensor was produced in the same manner as in Example 1, except that the silica coating layer was not formed on the carrier film.

(5) Comparative Example  2

A film touch sensor was manufactured in the same manner as in Example 1, except that a coating layer containing Al 2 O 3 , TiO 2 , and ZrO was formed on both sides of the carrier film instead of the silica coating layer.

Test Methods

(1) Evaluation of Film Deformation

Method of evaluating the heat shrinkage ratio before and after the process of the carrier film produced by the methods described in Examples and Comparative Examples Heat was applied at 180 캜 and the heat shrinkage ratio before and after heating was measured to evaluate the deformation of the carrier film.

<Evaluation Criteria>

○: When the heat shrinkage rate of the film is less than 2%

DELTA: When the heat shrinkage rate of the film is 2% to 5%

X: When the heat shrinkage rate of the film exceeds 5%

(2) Recyclability  evaluation

The carrier film produced by the methods described in the examples and the comparative examples was wound up to measure the number of cracks per unit area of the carrier film and the recyclability of the carrier film was evaluated.

<Evaluation Criteria>

○: Crack not generated per 1 m 2 of film

C: 1 to 10 cracks per 1 m 2 of film

X: More than 10 cracks per 1 m 2 of film

Degree of film deformation Recyclability Example 1 Example 2 Example 3 Comparative Example 1 Not rated Not rated Comparative Example 2 X X

The results are shown in Table 1. Referring to Table 1, it can be seen that the embodiments according to the present invention have a silica coating layer so that the degree of deformation of the carrier film itself is remarkably low and the occurrence of cracks during winding is remarkably smaller than in the comparative example.

However, in the case of Example 2, as the thickness of the first silica coating layer became thick, cracks occurred during winding and the recyclability was slightly lower than in the other Examples. In Example 3, the silica coating layer was a single layer And the degree of film deformation was slightly larger than that of the other examples.

Claims (17)

Forming a silica (SiOx) coating layer on at least one side of the carrier film; And
And forming an isolation layer, a first protective layer, and an electrode pattern layer on the carrier film on which the silica (SiOx) coating layer is formed.
The method of claim 1, wherein the silica coating layer is formed by plasma deposition.
3. The method of claim 2, wherein the plasma deposition is performed using TEOS (Tetra-ethoxysilane) based monomer.
3. The method of claim 2, wherein the plasma deposition is performed at a frequency of 13 to 14 MHz.
3. The method of claim 2, wherein the plasma deposition is performed at a rate of 8 to 12 nm / sec.
The method according to claim 1, wherein the silica coating layer has a thickness of 60 to 100 nm.
The method of manufacturing a film touch sensor according to claim 1, wherein the hardness of the silica coating layer is 2 to 3H.
[3] The method of claim 2, wherein the plasma deposition step comprises: forming a first silica coating layer on a lower portion of the carrier substrate; and forming a second silica coating layer on the carrier substrate.
The method of manufacturing a film touch sensor according to claim 8, wherein the first silica coating layer and the second silica coating layer have different thicknesses.
The carrier film of claim 1, wherein the carrier film is a polyethylene terephthalate (PET) film, a polyethylene (PE) film, a polypropylene (PP) film, a polymethylmethacrylate (PMMA) film, a triacetylcellulose Wherein the film is selected from the group consisting of a film, a polycarbonate (PC) film, a polyamide film, a polyimide film, a polyarylate film, a cycloolefin film (COP) film and an olefin film Way.
The method of claim 1, further comprising forming a second passivation layer on the first passivation layer on which the electrode pattern layer is formed.
12. The method of claim 11, wherein the second passivation layer is selected from the group consisting of a substrate, a passivation layer, and an adhesive layer.
12. The method of claim 11, further comprising attaching a substrate film on the second passivation layer via an adhesive.
The method of manufacturing a film touch sensor according to claim 13, wherein the base film is a polarizing plate or a transparent film.
The method of claim 1, further comprising peeling the carrier substrate from the top laminate comprising the separation layer, the first passivation layer, and the electrode pattern layer.
16. The method of claim 15, further comprising the step of re-forming a silica coating layer on at least one side of the carrier film after said peeling step.
The method of any one of claims 1 to 16, wherein all of the steps are performed in a roll-to-roll process.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140020602A (en) 2012-08-10 2014-02-19 삼성디스플레이 주식회사 Thin-film transistor substrate and method of manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140020602A (en) 2012-08-10 2014-02-19 삼성디스플레이 주식회사 Thin-film transistor substrate and method of manufacturing the same

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