KR20160106553A - Film-like conductive adhesive, semiconductor device manufacturing method, and semiconductor device - Google Patents

Abstract

The present invention relates to a method for manufacturing a semiconductor device, which comprises a step of die-bonding a semiconductor chip to an adherend through a conductive film-type adhesive and a step of die-bonding the semiconductor chip onto an adherend, A conductive film type adhesive for use in a method of manufacturing a semiconductor device, which comprises a step of thermally curing by heating for 300 minutes.

Description

TECHNICAL FIELD [0001] The present invention relates to a conductive film type adhesive, a method of manufacturing a semiconductor device, and a semiconductor device.

The present invention relates to a conductive film type adhesive, a method of manufacturing a semiconductor device, and a semiconductor device.

BACKGROUND ART [0002] In the manufacture of a semiconductor device, a method of adhering a semiconductor element to a metal lead frame or the like (so-called die bonding method) has been started by a conventional method using a solder or a resin paste starting from a gold-silicon process. At present, a method using a conductive resin paste is used.

However, in the method using the resin paste, there is a problem that the conductivity is lowered by the voids, the thickness of the resin paste is uneven, or the resin paste is emptied and the pad is contaminated. In order to solve such a problem, a film-type adhesive containing a polyimide resin is sometimes used instead of a resin paste (for example, see Patent Document 1).

Patent Document 1: JP-A-6-145639

In the case of manufacturing a semiconductor device using a conductive film-type adhesive as described in Patent Document 1, it often includes a step of thermally curing the adhesive. However, if the time for thermosetting is long, the number of semiconductor devices that can be manufactured per unit time decreases, which may cause an increase in cost.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a film-type adhesive capable of improving manufacturing efficiency, a method of manufacturing a semiconductor device, and a semiconductor device obtained by the method of manufacturing the semiconductor device do.

The conductive film-type adhesive according to the present invention is characterized by comprising a step of die-bonding a semiconductor chip onto an adherend through a conductive film-type adhesive and a step of die bonding the semiconductor chip onto an adherend, And a step of thermally curing by heating at 100 to 260 캜 for 3 minutes to 300 minutes.

According to the above constitution, the conductive film type adhesive is thermally cured by heating at 100 ° C to 260 ° C for 3 minutes to 300 minutes. By setting the heating time to a relatively short time between 3 minutes and 300 minutes, the number of semiconductor devices that can be manufactured per unit time can be increased.

In the above constitution, it is preferable that the storage elastic modulus at 175 ° C after heating and curing at 200 ° C for 180 minutes is 1 MPa to 3000 MPa.

When the storage elastic modulus at 175 ° C after heating and curing at 200 ° C for 180 minutes is 1 MPa or more, good wire bonding properties can be obtained. In addition, it is possible to prevent chip flow during resin sealing. On the other hand, if the storage elastic modulus is 3000 MPa or less, peeling of the conductive film-type adhesive and the chip hardly occurs because it is not too hard even when an impact is applied to the semiconductor device. Therefore, the yield of the semiconductor device manufactured using the conductive film type adhesive is improved.

In the above constitution, it is preferable to include a thermosetting resin, a curing agent for curing the thermosetting resin, and an accelerator for promoting thermosetting. When the thermosetting resin, the curing agent for curing the thermosetting resin, and the accelerator for accelerating the thermosetting are contained, the storage elastic modulus at 175 ° C after the thermosetting can be made within a suitable range.

The conductive film type adhesive can impart conductivity by including conductive particles. The content of the conductive particles in the conductive film type adhesive is preferably 30 wt% to 95 wt%. If it is less than 30% by weight, formation of a conductive path tends to be difficult. On the other hand, if it exceeds 95% by weight, film formation tends to be difficult. Further, the adhesion to the metal layer tends to be lowered.

For the reason of excellent conductivity, the conductive particles are preferably at least one selected from the group consisting of gold particles, silver particles, copper particles and coated particles. The coated particles include core particles and a coating film covering the core particles. The coating film preferably contains at least one kind selected from the group consisting of gold, silver and copper.

The conductive particles preferably include plate-like particles having an aspect ratio of 5 or more, and the content of the plate-like particles in 100 wt% of the conductive particles is preferably 5 wt% to 100 wt%.

In the conductive film-type adhesive containing plate-like particles, the plate-like particles are in surface contact with each other to form a conductive path. On the other hand, when only spherical particles are mixed, a conductive path is formed by point contact between spherical particles. Therefore, the conductive film-type adhesive containing plate-like particles can obtain excellent conductivity as compared with an adhesive containing only spherical particles.

It is preferable that the conductive particles include spherical spherical particles. It is preferable that at least two peaks are present in the particle size distribution of the spherical particles, a peak A exists in a particle diameter range of 0.2 탆 to 0.8 탆, a peak B exists in a particle diameter range of 3 탆 to 15 탆, To the particle diameter of the peak A is preferably 5 to 15.

In the conductive film type adhesive in which the peaks A and B exist in the particle size distribution, the spherical particles forming the peak A are filled in the space (gap) between the spherical particles forming the peak B, Are formed. Therefore, excellent conductivity can be obtained.

The present invention also provides a method for manufacturing a semiconductor device, comprising the steps of: after a step of die-bonding a semiconductor chip to an adherend through a conductive film-type adhesive and a step of die bonding the semiconductor chip onto an adherend, And a step of thermally curing by heating for 3 minutes to 300 minutes.

According to the above constitution, the conductive film type adhesive is thermally cured by heating at 100 ° C to 260 ° C for 3 minutes to 300 minutes. By setting the heating time to a relatively short time between 3 minutes and 300 minutes, the number of semiconductor devices that can be manufactured per unit time can be increased.

The present invention also relates to a semiconductor device obtained by the method for manufacturing the semiconductor device.

According to the present invention, it is possible to provide a film-type adhesive capable of improving the manufacturing efficiency, a method for manufacturing a semiconductor device, and a semiconductor device obtained by the method for manufacturing the semiconductor device.

1 is a schematic cross-sectional view of a film-type adhesive.
2 is a schematic sectional view of a dicing tape with a film-type adhesive.
3 is a schematic cross-sectional view of a dicing tape with a film-type adhesive according to a modification.
4 is a cross-sectional view schematically showing a state in which a semiconductor wafer is arranged on a dicing tape with a film-type adhesive.
5 is a cross-sectional view schematically showing a state in which a semiconductor wafer is separated.
6 is a schematic sectional view of an adherend for attaching a semiconductor chip.
7 is a schematic cross-sectional view of the semiconductor device.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to embodiments. However, the present invention is not limited to these embodiments.

[Film type adhesive]

As shown in Fig. 1, the form of the film-like adhesive 3 of Embodiment 1 is film type. The film type adhesive 3 has conductivity and thermosetting property.

The film-type adhesive 3 is used in a manufacturing method of a semiconductor device, including the following steps.

After the step of die bonding the semiconductor chip onto the adherend through the conductive film type adhesive and the step of die bonding the semiconductor chip onto the adherend, the conductive film type adhesive is heated at 100 to 260 DEG C for 3 minutes to 300 Heat-curing step by heating for a minute.

Since the film type adhesive 3 is thermally cured in a relatively short period of time ranging from 3 minutes to 300 minutes in the above-mentioned thermosetting step, the number of semiconductor devices which can be manufactured per unit time can be increased.

Details of the manufacturing method of the semiconductor device will be described later.

The film-type adhesive 3 preferably has a storage elastic modulus at 175 ° C of 1 MPa to 3000 MPa after being heated and cured at 200 ° C for 180 minutes. When the storage elastic modulus at 175 ° C after heating and curing at 200 ° C for 180 minutes is 1 MPa or more, good wire bonding properties can be obtained. In addition, it is possible to prevent chip flow during resin sealing. On the other hand, if the storage elastic modulus is 3000 MPa or less, peeling of the conductive film-type adhesive and the chip hardly occurs because it is not too hard even when an impact is applied to the semiconductor device.

The storage elastic modulus at 175 占 폚 after the film-type adhesive 3 is heated and cured at 200 占 폚 for 180 minutes can be controlled by the content of the accelerator for promoting the thermosetting and the kind and amount of the functional group of the compounding material.

The film type adhesive 3 preferably comprises a thermoplastic resin. Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, Polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins and fluororesins. Among these thermoplastic resins, an acrylic resin which is low in ionic impurities and high in heat resistance and can secure the reliability of a semiconductor element is particularly preferable.

The acrylic resin is not particularly limited, and a polymer comprising one or more kinds of esters of acrylic acid or methacrylic acid having a straight chain or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms Coalescence), and the like. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, An ethyl group, an ethyl group, an ethyl group, an ethyl group, an ethyl group, an ethylthio group, an ethylthio group, an ethylthio group, an ethylthio group, an ethylthio group, an ethylthio group, an ethylthio group, .

The other monomer forming the polymer (acrylic copolymer) is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid (Meth) acrylate, 2-hydroxyethyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth) acrylic acid, (Meth) acrylate such as 6-hydroxyhexyl acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (Meth) acrylamide, 2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfone sulfonic acid, Peel (meth) the phosphoric acid group-containing monomer such as acrylate or (meth) sulfonic acid group-containing monomers or 2-hydroxy ethyl acrylate phosphate, such as one oxy-naphthalene sulfonic acid with an acrylic.

Among acrylic resins, the weight average molecular weight is preferably 100,000 or more, more preferably 300,000 to 3,000,000, and still more preferably 500,000 to 200,000. If it is within the above-mentioned numerical range, the adhesive property and the heat resistance are excellent. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion.

The glass transition temperature of the thermoplastic resin is preferably -40 占 폚 or higher, more preferably -35 占 폚 or higher, and still more preferably -25 占 폚 or higher. If the temperature is lower than -40 占 폚, the film-like adhesive 3 becomes sticky and sticks excessively to the dicing tape, so that the pickup property tends to deteriorate. The glass transition temperature of the thermoplastic resin is preferably -5 占 폚 or lower, more preferably -10 占 폚 or lower, and still more preferably -11 占 폚 or lower. When the temperature is higher than -10 ° C, the modulus of elasticity is increased, and the film-type adhesive 3 tends to be difficult to adhere to the semiconductor wafer (low-temperature adhesiveness is lowered) at a low temperature of about 40 ° C. If the glass transition temperature of the thermoplastic resin is -5 DEG C or lower, the flowability of the film-like adhesive 3 in the vicinity of the thermosetting temperature can be increased, and the voids can be easily extinguished by heating under pressure.

In the present specification, the glass transition temperature of the thermoplastic resin refers to the theoretical value obtained by the Fox equation.

As another method of obtaining the glass transition temperature, there is a method of obtaining the glass transition temperature of the thermoplastic resin by the temperature at the maximum heat absorption peak measured by a differential scanning calorimeter (DSC). Specifically, the sample to be measured is heated at a temperature of about 50 ° C higher than the glass transition temperature (predicted temperature) of the sample to be predicted by using a differential scanning calorimeter ("Q-2000" manufactured by T.A. After heating, the mixture is cooled to a temperature lower than the predicted temperature by 50 占 폚 and subjected to pretreatment. Thereafter, the temperature is elevated at a heating rate of 5 占 폚 / min under a nitrogen atmosphere, and the endothermic temperature is measured.

The film type adhesive 3 preferably includes a curable resin such as a thermosetting resin and a curing agent. Thus, the thermal stability can be improved.

Examples of the curable resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. Particularly, an epoxy resin containing less ionic impurities or the like which corrodes semiconductor elements is preferable. As the curing agent of the epoxy resin, phenol resin or imidazole compound is preferable.

The epoxy resin is not particularly limited, and examples thereof include epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, Polyfunctional epoxy resin or polyfunctional epoxy resin such as phenol resin, phenol resin, phenol resin, phenol resin, phenol resin, phenol resin, phenol resin, phenol resin, An epoxy resin such as a diallylamine type is used. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylol ethane type epoxy resins are particularly preferable. These epoxy resins are rich in reactivity with a phenol resin as a curing agent and have excellent heat resistance.

The phenolic resin acts as a curing agent for the epoxy resin, and examples thereof include novolak type phenol resins such as phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butyl phenol novolac resin and nonyl phenol novolac resin, Resole-type phenol resins, and polyoxystyrenes such as polyperoxystyrene. Of these phenolic resins, phenol novolak resins and phenol aralkyl resins are particularly preferable. This is because connection reliability of the semiconductor device can be improved.

The imidazole-based compound may be, for example, 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11-Z), 2-heptadecylimidazole Methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4-methylimidazole Benzimidazole (trade name: 2P4MZ), 1-benzyl-2-methylimidazole (trade name: 1B2MZ) (Product name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenylimidazolium trimellitate ), 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] - ethyl-s-triazine (trade name 2MZ- (Trade name: C11Z-A), 2,4-diamino-6- [2'-ethyl-4'-methylimidazole (1 ')] - ethyl-s-triazine (trade name: 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazolyl- Phenyl-4-methyl-imidazole (product name: 2PHZ-PW), 2-phenyl-4-methyl- 5-hydroxymethylimidazole (trade name: 2P4MHZ-PW) and the like (all manufactured by Shikoku Chemical Industry Co., Ltd.).

The mixing ratio of the epoxy resin to the phenol resin is preferably such that the hydroxyl group in the phenol resin is equivalent to 0.5 to 2.0 equivalents per equivalent of the epoxy group in the epoxy resin component. More suitable is 0.8 to 1.2 equivalents. That is, if the blending ratio of the two is out of the above range, sufficient curing reaction does not proceed and the properties of the cured product tend to deteriorate.

The film type adhesive 3 preferably includes a curable resin which is solid at 25 占 폚 and a curable resin which is liquid at 25 占 폚. As a result, good low-temperature adhesiveness can be obtained.

In this specification, the liquid phase at 25 占 폚 means that the viscosity at 25 占 폚 is less than 5000 Pa 占 퐏. On the other hand, the solid at 25 占 폚 means that the viscosity at 25 占 폚 is 5000 Pa.s or more.

The viscosity can be measured using a model HAAKE Roto VISCO1 manufactured by Thermo Scientific.

In the film-type adhesive 3, the content of the curable resin solid at 25 占 폚 in 100% by weight of the curable resin is preferably 10% by weight or more, and more preferably 12% by weight or more. If it is less than 10% by weight, the film-like adhesive 3 becomes sticky and sticks excessively to the dicing tape, so that the pickup property tends to deteriorate.

On the other hand, the content of the curable resin which is solid at 25 占 폚 in 100% by weight of the curable resin is preferably 60% by weight or less, more preferably 30% by weight or less, and still more preferably 20% by weight or less. If it exceeds 60% by weight, it tends to be difficult to adhere the film-like adhesive 3 to the semiconductor wafer at a low temperature of about 40 캜 (low-temperature adhesiveness is lowered).

The total content of the thermoplastic resin and the curable resin in the film type adhesive 3 is preferably 5% by weight or more, and more preferably 10% by weight or more. If it is 5% by weight or more, the shape of the film can be easily maintained. The total content of the thermoplastic resin and the curable resin is preferably 70% by weight or less, more preferably 60% by weight or less. If it is 70% by weight or less, the conductive particles exhibit appropriate conductivity.

In the film-type adhesive (3), the weight of the thermoplastic resin / the weight of the curable resin is preferably 50/50 to 10/90, more preferably 40/60 to 15/85. If the ratio of the thermoplastic resin is larger than 50/50, the thermal stability tends to deteriorate. On the other hand, if the proportion of the thermoplastic resin is smaller than 10/90, film formation tends to become difficult.

The film-type adhesive 3 preferably includes conductive particles. Thus, conductivity can be imparted. Examples of the conductive particles include gold particles, silver particles, copper particles, and coated particles.

The coated particles include core particles and a coating film covering the core particles. The core particles may be either conductive or non-conductive, and glass particles, for example, may be used. Examples of the coating film include a film containing gold, a film containing silver, a film containing copper, and the like.

The average particle diameter of the conductive particles is not particularly limited, but is preferably 0.001 times or more (thickness of film-like adhesive 3 × 0.001 or more), and more preferably 0.1 times or more, with respect to the thickness of film- If it is less than 0.001 times, it is difficult to form a conductive path, and conductivity tends not to be stabilized. The average particle diameter of the conductive particles is preferably not more than 1 time (not more than the thickness of the film-like adhesive 3) with respect to the thickness of the film-like adhesive 3, more preferably not more than 0.8 times. If it exceeds 1 times, there is a risk of causing chip cracking.

The average particle diameter of the conductive particles is a value obtained by a photometric type particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The specific gravity of the conductive particles is preferably 0.7 or more, more preferably 1 or more. If it is less than 0.7, the conductive particles may float during the production of the adhesive composition solution (varnish), and the dispersion of the conductive particles may become uneven. The specific gravity of the conductive particles is preferably 22 or less, more preferably 21 or less. If it exceeds 22, the conductive particles tend to sink, and dispersion of the conductive particles may be uneven.

The conductive particles may include plate-like particles, spherical particles, needle-like particles, filament-like particles, and the like. Among them, the conductive particles preferably include plate-like particles and spherical particles.

The plate-like particles include, for example, plate-shaped particles having an aspect ratio of 5 or more. If it is 5 or more, plate-like particles are likely to come into surface contact with each other, and a conductive path can be easily formed.

The aspect ratio is preferably 8 or more, and more preferably 10 or more. On the other hand, the aspect ratio is preferably 10000 or less, more preferably 100 or less, further preferably 70 or less, particularly preferably 50 or less.

The aspect ratio of the plate-like particles is a ratio (average long diameter / average thickness) to an average thickness of the average long diameter.

In the present specification, the average long diameter of the plate-like particles is obtained by observing the cross section of the film-like adhesive 3 with a scanning electron microscope (SEM) and measuring the long diameter of 100 randomly selected plate- It is an average value.

The average thickness of the plate-like particles is an average value obtained by observing the cross section of the film-like adhesive 3 with a scanning electron microscope (SEM) and measuring the thickness of 100 plate-shaped particles randomly selected.

The average long diameter of the plate-like particles is preferably 0.5 占 퐉 or more, and more preferably 1.0 占 퐉 or more. If it is 0.5 m or more, the probability of contact of the plate-shaped particles is increased, and conduction is easily obtained.

On the other hand, the average long diameter of the plate-like particles is preferably 50 占 퐉 or less, and more preferably 30 占 퐉 or less. If it is 50 탆 or less, it is difficult for the particles to settle in the coating varnish step, and a stable coating varnish can be produced.

The content of the plate-like particles in 100 wt% of the conductive particles is preferably 5 wt% or more, and more preferably 10 wt% or more. The content of the plate-like particles in 100 wt% of the conductive particles may be 100 wt%, but is preferably 50 wt% or less, and more preferably 20 wt% or less.

It is preferable that the conductive particles include spherical spherical particles.

It is preferable that at least a peak A and a peak B exist in the particle size distribution of spherical particles. For example, it is preferable that the peak A exists in the range of the particle diameter of 0.2 탆 to 0.8 탆, and the peak B exists in the range of the particle diameter of 3 탆 to 15 탆. In the film-type adhesive 3, spherical particles forming the peak A are filled between the spherical particles forming the peak B, so that many contact points between the spherical particles are formed. Therefore, excellent conductivity can be obtained.

When the peak A is present in a particle diameter range of 0.2 탆 or more, aggregation of the spherical particles hardly occurs.

It is preferable that the peak A is present in a particle diameter range of 0.5 탆 or more.

When peak A is present in a particle diameter range of 0.8 占 퐉 or less, spherical particles forming peak A are filled between spherical particles forming peak B. The peak A is preferably present in a particle diameter range of 0.75 mu m or less.

When the peak B exists in a particle diameter range of 3 占 퐉 or more, the spherical particles forming the peak A are filled between the spherical particles forming the peak B. It is preferable that the peak B exists in a range of particle diameters of 3.5 m or more.

When the peak B is present in a particle diameter range of 15 占 퐉 or less, the surface roughness when the film is made into a film shape is suppressed, and the film can stably adhere to the adherend. The peak B is preferably present in a particle diameter range of 10 탆 or less, more preferably in a particle diameter range of 8 탆 or less, and more preferably in a particle diameter range of 6 탆 or less.

The ratio of the particle diameter of peak B to the particle diameter of peak A (particle diameter of peak B / particle diameter of peak A) is preferably 5 or more, and more preferably 7 or more. 5 or more, spherical particles forming the peak A are filled in between the spherical particles forming the peak B.

On the other hand, the ratio of the peak A to the particle diameter of the peak A is preferably 15 or less, more preferably 10 or less. If it is 15 or less, spherical particles can be filled up.

In the particle size distribution of the spherical particles, peaks other than the peak A and the peak B may be present.

The average particle diameter of spherical particles is preferably 1 占 퐉 or more, and more preferably 1.5 占 퐉 or more. If it is 1 mu m or more, good irregularity followability can be obtained. The average particle diameter of spherical particles is preferably 10 占 퐉 or less, more preferably 8 占 퐉 or less, and further preferably 5 占 퐉 or less. If it is 10 μm or less, film formability is good.

The particle size distribution and the average particle diameter of spherical particles can be measured by the following method.

Measurement of particle size distribution and average particle size of spherical particles

The film-type adhesive 3 is placed in a crucible, and the film-type adhesive 3 is ignited. The obtained ash was dispersed in pure water and ultrasonicated for 10 minutes. The particle size distribution (volume basis) and average particle size were determined using a laser diffraction scattering particle size distribution analyzer (LS 13 320, manufactured by Beckman Coulter, Inc., wet method).

The content of the spherical particles in 100 wt% of the conductive particles is preferably 5 wt% or more, more preferably 80 wt% or more, still more preferably 90 wt% or more, particularly preferably 100 wt%.

The content of the conductive particles in the film type adhesive 3 is preferably 30% by weight or more, more preferably 40% by weight or more, further preferably 60% by weight or more, particularly preferably 70% by weight or more. If it is less than 30% by weight, formation of a conductive path tends to be difficult. The content of the conductive particles is preferably 95% by weight or less, more preferably 94% by weight or less. If it exceeds 95% by weight, film formation tends to be difficult. Further, the adhesion tends to decrease.

It is preferable that the film type adhesive 3 includes an accelerator that promotes thermosetting. Thus, thermal curing of the curing agent such as epoxy resin and phenol resin can be promoted.

Examples of the accelerator include, but are not limited to, tetraphenylphosphonium tetraphenylborate (trade name: TPP-K), tetraphenylphosphonium dicyanamide (trade name: TPP-DCA), tetraphenylphosphonium tetra- Boron-based curing accelerators such as triphenylphosphine triphenylborane (trade name: TPP-MK) and triphenylphosphine triphenylborane (trade name: TPP-S) (all manufactured by Hokko Chemical Industry Co., Ltd.).

Examples of the accelerators include 2-methylimidazole (trade name: 2MZ), 2-undecylimidazole (trade name: C11-Z), 2-heptadecylimidazole (trade name: C17Z) Methylimidazole (trade name: 2E4MZ), 2-phenylimidazole (trade name: 2PZ), 2-phenyl-4-methylimidazole 2-methylimidazole (trade name: 1B2MZ), 1-benzyl-2-phenylimidazole (trade name: 1B2PZ), 1-cyanoethyl- (Product name: 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name: C11Z-CN), 1-cyanoethyl-2-phenylimidazolium trimellitate 2MZ-A), 2,4-diamino-6- (2'-methylimidazolyl- (2'-undecylimidazolyl- (1 ')] - ethyl-s-triazine (trade name: C11Z-A), 2,4-diamino- (1 ')] - ethyl-s-triazine (trade name: 2E4MZ-A), 2,4-diamino-6- [2'- methylimidazolyl- Phenyl-4-methyl-imidazole (product name: 2PHZ-PW), 2-phenyl-4-methyl- And imidazole-based curing accelerators such as 5-hydroxymethylimidazole (trade name: 2P4MHZ-PW) (all manufactured by Shikoku Chemical Industry Co., Ltd.).

Of these, tetraphenylphosphonium tetraphenylborate (trade name: TPP-K) and tetraphenylphosphonium dicyanamide (trade name: TPP-DCA) which are excellent in latency are preferable from the standpoint of preservability of the film type adhesive.

The content of the promoter may be appropriately set, but is preferably 0.05 to 10 parts by weight, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the material excluding the conductive particles from the constituent material of the film type adhesive.

In addition to the above components, the film-type adhesive 3 may suitably contain a compounding agent generally used for producing a film such as a crosslinking agent.

The film-like adhesive 3 can be produced by a usual method. For example, a film-like adhesive agent (3) can be prepared by preparing an adhesive composition solution containing each of the above components, applying a solution of the adhesive composition on the substrate separator to a predetermined thickness to form a coating film, and drying the coating film have.

The solvent used in the adhesive composition solution is not particularly limited, but an organic solvent capable of uniformly dissolving, kneading or dispersing the above components is preferable. Examples thereof include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone and cyclohexanone, toluene and xylene. The application method is not particularly limited. Examples of the solvent coating method include a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, a screen printing, and the like. Among them, a die coater is preferable in that the uniformity of the coating thickness is high.

As the substrate separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used. Examples of the application method of the adhesive composition solution include roll coating, screen coating, gravure coating and the like. The drying condition of the coating film is not particularly limited, and can be, for example, a drying temperature of 70 to 160 캜 and a drying time of 1 to 5 minutes.

As a method for producing the film-type adhesive 3, for example, a method of producing the film-type adhesive 3 by mixing the above components with a mixer and press-molding the resulting mixture is also suitable. The mixer may be a planetary mixer or the like.

The thickness of the film-type adhesive 3 is not particularly limited, but is preferably 5 占 퐉 or more, more preferably 15 占 퐉 or more. If the thickness is less than 5 占 퐉, portions that do not adhere to the semiconductor wafer or the semiconductor chip which are bent may be generated, and the bonding area may become unstable. The thickness of the film-type adhesive 3 is preferably 100 占 퐉 or less, more preferably 50 占 퐉 or less. If the thickness exceeds 100 탆, the film-like adhesive 3 may be excessively discharged due to the load of the die attaching, and the pad may be contaminated.

The surface roughness (Ra) of the film-type adhesive 3 is preferably 0.1 to 5000 nm. Less than 0.1 nm is difficult to formulate. On the other hand, if the thickness exceeds 5000 nm, there is a fear that the adhesion to an adherend during die attaching may deteriorate.

The electric resistivity of the film-type adhesive 3 is preferably as low as possible, for example, 9 x 10 < ^-2 > When it is 9 x 10 < ^-2 > OMEGA. M or less, it is good in conductivity and can cope with compact and high density packaging. On the other hand, the electric resistivity is preferably 1 x 10 < ^-6 >

The higher the thermal conductivity of the film-type adhesive 3 is, the more preferable it is, for example, 0.5 W / mK or more. If it is 0.5 W / m · K or more, heat dissipation is good and it is possible to cope with compact and high density packaging. On the other hand, if it is less than 0.5 W / m 占., The heat dissipation property is deteriorated and the heat stays and the conductivity tends to deteriorate.

The tensile storage modulus of the film-like adhesive 3 at 120 캜 is preferably 10 MPa or less, more preferably 5 MPa or less. If it is 10 MPa or less, the flowability of the film-like adhesive 3 in the vicinity of the thermosetting temperature is high, and it is easy to extinguish the voids by heating under pressure. The tensile storage modulus at 120 캜 is preferably 0.01 MPa or more, and more preferably 0.05 MPa or more. If it is 0.01 MPa or more, the film-like adhesive 3 is hardly released.

The tensile storage modulus at 120 占 폚 can be measured by the following method.

Measurement of tensile storage modulus at 120 ° C

A measuring piece of a rectangular shape having a length of 30 mm, a width of 10 mm and a thickness of 400 탆 is cut out from the film-type adhesive 3. With respect to the measurement piece, a tensile storage elastic modulus at a width of 22.6 mm and a temperature of 0 ° C to 200 ° C was measured with a fixed viscoelasticity measuring device (RSA-II, manufactured by Rheometric Scientific Co., Ltd.) Measure under conditions.

The tensile storage modulus at 120 占 폚 can be controlled by the glass transition temperature of the thermoplastic resin, the amount of conductive particles to be blended, and the like. For example, by adding a thermoplastic resin having a low glass transition temperature, the tensile storage modulus at 120 캜 can be lowered.

The film-type adhesive 3 is used for manufacturing a semiconductor device. In particular, it can be suitably used for manufacturing a power semiconductor device. Specifically, it is used as a die attach film for bonding (adhering) an adherend such as a lead frame to a semiconductor chip. Examples of the adherend include lead frames, interposers, semiconductor chips, and the like. Among them, a lead frame is preferable.

The film type adhesive 3 is preferably used in the form of a dicing tape with a film type adhesive. When used in this form, it is possible to handle a semiconductor wafer adhered to the dicing tape with a film-type adhesive, so that it is possible to reduce the chance of handling with a single semiconductor wafer, and the handling property is good. Therefore, even a recent thin semiconductor wafer can be handled satisfactorily.

[Dicing tape with film-type adhesive]

The dicing tape with a film-type adhesive will be described.

As shown in Fig. 2, the dicing tape 10 with a film-type adhesive has a dicing tape 1 and a film-like adhesive 3 disposed on the dicing tape 1. Fig. The dicing tape 1 has a substrate 11 and a pressure-sensitive adhesive layer 12 disposed on the substrate 11. The pressure- The film-type adhesive 3 is disposed on the pressure-sensitive adhesive layer 12.

As shown in Fig. 3, the dicing tape 10 with a film-type adhesive may have a structure in which a film-like adhesive 3 is formed only on a portion where a work (semiconductor wafer 4) or the like is adhered.

The base material 11 is a base material for the dicing tape 10 with a film-like adhesive and is preferably transparent to ultraviolet rays. Examples of the base material 11 include polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, (Meth) acrylic acid ester (random, alternating) copolymer, an ethylene-butene copolymer, an ethylene-hexene copolymer, a polyurethane, a polyethylene Polyamide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass, glass (such as polyethylene terephthalate and polyethylene naphthalate), polycarbonate, polyimide, polyetheretherketone, Cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose-based Paper, there may be mentioned the silicone resin, metal (foil), paper or the like.

The surface of the base material 11 is subjected to chemical or physical treatments such as surface treatment for common use such as chromic acid treatment, ozone exposure, flame exposure, high voltage exposure, ionizing radiation treatment, and the like for the purpose of enhancing adhesion, A coating treatment with an undercoating agent (for example, an adhesive substance described later) can be carried out.

The thickness of the substrate 11 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 mu m.

The pressure-sensitive adhesive to be used for forming the pressure-sensitive adhesive layer 12 is not particularly limited, and general pressure-sensitive adhesives such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, an acrylic pressure-sensitive adhesive using an acrylic polymer as a base polymer is preferable from the viewpoints of ultrapure water of an electronic part which is not susceptible to contamination of a semiconductor wafer or glass, and clean cleaning property by an organic solvent such as alcohol.

Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (such as methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isopentyl And examples thereof include esters, hexyl esters, heptyl esters, octyl esters, 2-ethylhexyl esters, isooctyl esters, nonyl esters, decyl esters, isodecyl esters, undecyl esters, dodecyl esters, tridecyl esters, , Octadecyl ester, and eicosyl ester), and (meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, cyclohexyl (meth) acrylate, Esters and the like) as a monomer component, There may be mentioned polymers. The (meth) acrylic acid ester refers to an acrylate ester and / or methacrylate ester, and the (meth) acrylates of the present invention have the same meaning.

The acrylic polymer may contain units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or the cycloalkyl ester, if necessary, for the purpose of modifying the cohesive force, heat resistance and the like. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; Acrylate such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Hydroxyl group-containing monomers such as (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Containing sulfonic acid group such as styrene sulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamide propanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid Monomers; Monomers containing phosphoric acid groups such as 2-hydroxyethyl acryloyl phosphate; Acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers to be used is preferably 40% by weight or less based on the total monomer components.

In order to crosslink the acrylic polymer, a multi-functional monomer or the like may be contained as a monomer component for copolymerization as needed. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propyleneglycol di (meth) acrylate, neopentyl glycol di (Meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester ) Acrylate, and urethane (meth) acrylate. These multifunctional monomers may be used alone or in combination of two or more. The amount of the multifunctional monomer to be used is preferably 30% by weight or less based on the total monomer component in view of adhesion and the like.

The acrylic polymer is obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization may be carried out by any of various methods such as solution polymerization, emulsion polymerization, bulk polymerization and suspension polymerization. It is preferable that the content of the low molecular weight substance is small in view of prevention of contamination to a clean adherend. In this respect, the number average molecular weight of the acryl-based polymer is preferably 300,000 or more, and more preferably 400,000 to 3,000,000.

In order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may be suitably employed in the pressure-sensitive adhesive. Specific examples of the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted. When an external crosslinking agent is used, the amount thereof to be used is appropriately determined according to the balance with the base polymer to be crosslinked, and also depending on the intended use as a pressure-sensitive adhesive. Generally, it is preferable that the amount is 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the base polymer. In addition to the above components, additives known in the art such as various tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary.

The pressure-sensitive adhesive layer 12 can be formed by a radiation-curing pressure-sensitive adhesive. The radiation-curing pressure-sensitive adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, and can easily lower the adhesive force.

Only the portion 12a corresponding to the work adhesion portion of the pressure-sensitive adhesive layer 12 shown in Fig. 2 can be irradiated with radiation to set the difference in adhesive force with the other portion 12b. In this case, the portion 12b formed by the uncured radiation-curable pressure-sensitive adhesive adheres to the film-like adhesive 3, and the holding force at the time of dicing can be ensured.

In addition, by curing the radiation-curable pressure-sensitive adhesive layer 12 in accordance with the film-like adhesive 3 shown in Fig. 3, the portion 12a in which the adhesive force is remarkably decreased can be formed. In this case, the wafer ring can be fixed to the portion 12b formed by the uncured radiation-curable pressure-sensitive adhesive.

That is, in the case where the pressure-sensitive adhesive layer 12 is formed by a radiation-curing pressure-sensitive adhesive, the portion 12a is irradiated with radiation such that the adhesive strength of the portion 12a in the pressure- It is desirable to investigate.

The radiation-curable pressure-sensitive adhesive can be used without any particular limitation, which has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. Examples of radiation-curing pressure-sensitive adhesives include addition-type radiation-curing pressure-sensitive adhesives prepared by compounding a radiation-curable monomer component or an oligomer component with a common pressure-sensitive adhesive such as the acrylic pressure-sensitive adhesive and the rubber pressure-

Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri , Pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylate. Examples of the radiation-curable oligomer component include urethane-based, polyether-based, polyester-based, polycarbonate-based and polybutadiene-based oligomers, and the molecular weight thereof is suitably in the range of about 100 to 30000. The amount of the radiation-curable monomer component or oligomer component can be appropriately determined depending on the type of the pressure-sensitive adhesive layer so that the adhesive force of the pressure-sensitive adhesive layer can be lowered. Generally, it is about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of the base polymer such as acrylic polymer constituting the pressure-sensitive adhesive.

Examples of the radiation-curable pressure-sensitive adhesives include radiation-curing pressure-sensitive adhesives of the internal type employing, as the base polymer, those having a carbon-carbon double bond at the polymer side chain, main chain or main chain terminal in addition to the addition type radiation- The radiation-curable pressure-sensitive adhesive of the internal type does not need to contain or contain a low molecular weight oligomer component or the like. Therefore, the oligomer component or the like does not migrate over time and the pressure-sensitive adhesive layer Can be formed.

The base polymer having a carbon-carbon double bond may be a polymer having a carbon-carbon double bond and having a sticking property without particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. Examples of the basic skeleton of the acrylic polymer include the acrylic polymer exemplified above.

There are no particular restrictions on the method for introducing the carbon-carbon double bond to the acryl-based polymer, and various methods can be adopted. However, molecular design is easy to introduce the carbon-carbon double bond into the polymer side chain. For example, after a monomer having a functional group is copolymerized in advance in an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is condensed or added while maintaining the radiation curability of the carbon- .

Examples of the combination of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridyl group, and a hydroxyl group and an isocyanate group. Among the combinations of these functional groups, a combination of a hydroxyl group and an isocyanate group is suitable for easy tracking of the reaction. The functional group may be either an acryl-based polymer or the above-mentioned compound, provided that the combination of these functional groups is used to produce the acrylic-based polymer having the carbon-carbon double bond. In the above preferred combination, , And the compound having an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- alpha, alpha -dimethyl benzyl isocyanate and the like . As the acryl-based polymer, a copolymer obtained by copolymerizing the above-mentioned hydroxyl group-containing monomer, an ether compound of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether or the like is used.

The radiation-curable pressure-sensitive adhesive of the internal type may use the above-mentioned base polymer having a carbon-carbon double bond (in particular acrylic polymer) alone, but it is also possible to mix the radiation curable monomer component or oligomer component have. The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.

The radiation-curable pressure-sensitive adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include a photopolymerization initiator such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone,? -Hydroxy -?,? '- dimethylacetophenone, ? -Ketol compounds such as hydroxypropylphenone, 1-hydroxycyclohexyl phenyl ketone and the like; Methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -1; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; Ketal compounds such as benzyl dimethyl ketal; Aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; A photoactive oxime-based compound such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; Benzophenone compounds such as benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone; 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, A thioxanthone compound such as 2,4-diisopropylthioxanthone; Campquinone; Halogenated ketones; Acylphosphinoxides; Acylphosphonates, and the like. The blending amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight relative to 100 parts by weight of the base polymer such as acrylic polymer constituting the pressure-sensitive adhesive.

Examples of radiation-curable pressure-sensitive adhesives include those disclosed in JP 60-196956 A, an addition polymerizable compound having two or more unsaturated bonds, a photopolymerizable compound such as an alkoxysilane having an epoxy group, Based pressure-sensitive adhesives, acrylic pressure-sensitive adhesives, etc., containing a photopolymerization initiator such as organic sulfur compounds, peroxides, amines, and onium salt compounds.

The radiation-curable pressure-sensitive adhesive layer 12 may contain a compound that is colored by radiation if necessary. By incorporating a coloring compound into the pressure-sensitive adhesive layer 12 by irradiation with radiation, only the irradiated portion can be colored. The compound which is colored by irradiation with light is colorless or pale before irradiation, but is a compound which becomes colored by irradiation, and examples thereof include leuco dyes and the like. The use ratio of the compound that is colored by irradiation with radiation can be appropriately set.

Although the thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, it is preferably about 1 to 50 占 퐉, from the viewpoint of preventing the chip cut surface from becoming tortuous and the film-type adhesive 3 being fixedly held. Preferably 2 to 30 mu m, further preferably 5 to 25 mu m.

It is preferable that the film-like adhesive 3 of the dicing tape 10 with a film-type adhesive is protected by a separator (not shown). The separator has a function as a protecting material for protecting the film-type adhesive 3 from the time of actual use. The separator is peeled off when the work is adhered on the film-type adhesive 3. As the separator, a plastic film or paper surface-coated with a releasing agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine-based releasing agent, or a long-chain alkyl acrylate-based releasing agent can be used.

The dicing tape 10 with a film-type adhesive can be produced by a usual method. For example, the dicing tape 10 with a film-type adhesive can be manufactured by bonding the pressure-sensitive adhesive layer 12 of the dicing tape 1 and the film-like adhesive 3.

It is preferable that the peeling force when the film type adhesive 3 is peeled off from the dicing tape 1 is 0.01 to 3.0 N / 20 mm under the conditions of a peeling temperature of 25 占 폚 and a peeling speed of 300 mm / min. If it is less than 0.01 N / 20 mm, chip scattering may occur at the time of dicing. On the other hand, when it exceeds 3.00 N / 20 mm, pickup tends to become difficult.

[Method of Manufacturing Semiconductor Device]

A manufacturing method of a semiconductor device will be described.

As shown in Fig. 4, the dicing tape 10 with the film-type adhesive is pressed onto the semiconductor wafer 4. [ Examples of the semiconductor wafer 4 include silicon wafers, silicon carbide wafers, compound semiconductor wafers, and the like. As the compound semiconductor wafer, a gallium nitride wafer can be given.

Examples of the pressing method include a method of pressing by a pressing means such as a pressing roll.

The bonding temperature (bonding temperature) is preferably 35 DEG C or higher, more preferably 37 DEG C or higher. The upper limit of the compression temperature is preferably as low as possible, preferably not higher than 50 占 폚, more preferably not higher than 45 占 폚. It is possible to prevent the semiconductor wafer 4 from being affected by heat and to suppress the warp of the semiconductor wafer 4. [

The pressure is preferably in the range of 1 × 10 ⁵ Pa to 1 × 10 ⁷ Pa and more preferably in the range of 2 × 10 ⁵ Pa to 8 × 10 ⁶ Pa.

Next, as shown in Fig. 5, the semiconductor wafer 4 is diced. That is, the semiconductor wafer 4 is cut into a predetermined size, and the semiconductor wafer 5 is cut. Dicing is performed according to a conventional method. In this step, for example, a cutting method called a full cut, which cuts up to the dicing tape 10 with a film-type adhesive, can be adopted. The dicing apparatus used in the present step is not particularly limited and conventionally known dicing apparatuses can be used. Further, since the semiconductor wafer 4 is adhered and fixed by the dicing tape 10 with the film-type adhesive, it is possible to suppress the chip rupture and the chip scattering and also to suppress the breakage of the semiconductor wafer 4 .

The semiconductor chip 5 is picked up in order to peel off the semiconductor chip 5 adhered and fixed to the dicing tape 10 with the film-type adhesive. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, there is a method of picking up the semiconductor chips 5 picked up by picking up individual semiconductor chips 5 from the dicing tape 10 side with the film-type adhesive by the needles, and the like.

Here, the pick-up is carried out after irradiating the pressure-sensitive adhesive layer 12 with ultraviolet rays when the pressure-sensitive adhesive layer 12 is of the ultraviolet curing type. As a result, the adhesive force of the pressure-sensitive adhesive layer 12 to the film-type adhesive 3 is lowered, and the semiconductor chip 5 is easily peeled off. As a result, the semiconductor chip 5 can be picked up without damaging it. The conditions such as the irradiation intensity at the time of ultraviolet irradiation, the irradiation time, and the like are not particularly limited and may be appropriately set as required.

The picked up semiconductor chip 5 is adhered and fixed to the adherend 6 via the film-like adhesive 3 to obtain an adherend 61 having a semiconductor chip. The semiconductor chip adherend 61 includes a semiconductor chip 5 disposed on an adherend 6, a film type adhesive 3 disposed on the adherend 6, and a film type adhesive 3 .

The die attach temperature is preferably 80 占 폚 or higher, and more preferably 90 占 폚 or higher. The die attach temperature is preferably 150 占 폚 or lower, and more preferably 130 占 폚 or lower. 150 DEG C or less, it is possible to prevent occurrence of warp after die attach.

Subsequently, the adherend 61 attached with the semiconductor chip is heated to thermally cure the film-type adhesive 3, thereby fixing the semiconductor chip 5 and the adherend 6 thereto. The temperature condition at the time of heat curing is preferably within the range of 100 to 260 占 폚, preferably within the range of 110 to 230 占 폚, and more preferably within the range of 120 to 200 占 폚. The time period for maintaining the temperature under the above-described temperature at the time of thermal curing is within a range of 3 minutes to 300 minutes, preferably within a range of 10 minutes to 240 minutes, and more preferably within a range of 30 minutes to 180 minutes. Since the heating time is a relatively short time of 3 minutes to 300 minutes, the number of semiconductor devices that can be manufactured per unit time can be increased.

The thermal curing is preferably carried out under pressure. It is possible to extinguish the voids existing between the film type adhesive 3 and the adherend 6 and to prevent the film type adhesive 3 from adhering to the adherend 6 The contact area can be ensured.

As a method of heating under pressure, for example, a method of heating an adherend 61 having a semiconductor chip disposed in a chamber filled with an inert gas, and the like can be given.

The pressure of the pressurized atmosphere is preferably not less than 0.5 kg / cm 2 (4.9 × 10 ^-2 MPa), more preferably not less than 1 kg / cm 2 (9.8 × 10 ^-2 MPa), more preferably not less than 5 kg / 4.9 x 10 < ^-1 > MPa). If it is 0.5 kg / cm 2 or more, the voids existing between the film-like adhesive 3 and the adherend 6 can be easily extinguished. The pressure of the pressurized atmosphere is preferably 20 kg / cm 2 (1.96 MPa) or less, more preferably 18 kg / cm 2 (1.77 MPa) or less, and further preferably 15 kg / cm 2 (1.47 MPa) or less. If it is 20 kg / cm 2 or less, it is possible to suppress the release of the film-type adhesive 3 due to excessive pressure.

The heating temperature at the time of heating under pressure is preferably 100 占 폚 or higher, more preferably 110 占 폚 or higher, further preferably 120 占 폚 or higher, particularly preferably 170 占 폚 or higher. If it is 100 DEG C or higher, the film type adhesive 3 can be made to have an appropriate hardness, and voids can be effectively lost by pressure hardening.

The heating temperature is preferably 260 占 폚 or lower, more preferably 200 占 폚 or lower, and more preferably 180 占 폚 or lower. If it is 260 占 폚 or lower, decomposition of the film-like adhesive 3 before curing can be prevented.

The heating time under heating under pressure is preferably at least 3 minutes, more preferably at least 15 minutes, more preferably at least 30 minutes. If it is more than 3 minutes, the effect of pressurization can be sufficiently obtained. The heating time is preferably 300 minutes or less, more preferably 180 minutes or less, still more preferably 120 minutes or less, even more preferably 60 minutes or less.

Next, a wire bonding step for electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and the electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature at the time of wire bonding is preferably 80 占 폚 or higher, more preferably 120 占 폚 or higher, and the temperature is preferably 250 占 폚 or lower, and more preferably 175 占 폚 or lower. Further, the heating time is performed for several seconds to several minutes (for example, one second to one minute). The connection is carried out by the combination of the vibration energy by the ultrasonic wave and the pressing energy by the application pressure in a state of being heated to be within the above temperature range.

Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. [ This step is carried out by molding a resin for sealing into a metal mold. As the sealing resin 8, for example, an epoxy resin is used. The heating temperature at the time of resin sealing is preferably 165 DEG C or higher, more preferably 170 DEG C or higher, and the heating temperature is preferably 185 DEG C or lower, more preferably 180 DEG C or lower.

If necessary, the sealing material may be further heated (post-curing step). As a result, the sealing resin 8 which is hardly cured in the sealing step can be completely cured. The heating temperature can be appropriately set.

As described above, in the first embodiment, the semiconductor chip 5 is die-bonded on the adherend 6 via the film-type adhesive 3, and the step of bonding the semiconductor chip 5 onto the adherend 6, After the step of bonding, the semiconductor device is manufactured by a method including a step of thermally curing the film-like adhesive 3 by heating under pressure.

More specifically, the method of Embodiment 1 includes the steps of disposing a semiconductor wafer 4 on a film-like adhesive 3 of a dicing tape 10 with a film-type adhesive, A step of forming a semiconductor chip 5 by dicing the semiconductor wafer 4 placed thereon, a step of picking up the semiconductor chip 5 together with the film type adhesive 3, After the step of die-bonding the chip 5 onto the adherend 6 and the step of die-bonding the semiconductor chip 5 onto the adherend 6, the film-like adhesive 3 is heated under pressure, Includes processes that evolve.

Example

Hereinafter, the present invention will be described in detail with reference to examples. However, the present invention is not limited to the following examples unless it departs from the gist thereof.

The components used in the examples will be described.

TE-SAN RESIN SG-280 EK23 (thermoplastic resin, Mw: 90,000, acid value: 30 mgKOH / g) manufactured by Nagase ChemteX Co.,

(Acrylic copolymer containing carboxyl group, Mw: 90,000, acid value: 5 mgKOH / g, glass transition temperature: -13 캜) manufactured by Nagase Chemtech Co.,

Arufon UC-3510: Arufon UC-3510 (thermoplastic resin, Mw: 2000, acid value: 70 mgKOH / g) manufactured by Toagosei Co.,

JER828: JER828 (thermosetting resin, epoxy equivalent 184 to 194) manufactured by Mitsubishi Chemical Corporation

EPICLON EXA-4850-150: EPICLON EXA-4850-150 (thermosetting resin, epoxy equivalent 450) manufactured by DIC Co.,

EPICLON HP-4700: EPICLON HP-4700D (thermosetting resin, epoxy equivalent 160) manufactured by DIC Co.,

EPICLON HP-4032D: EPICLON HP-4032D (thermosetting resin, epoxy equivalents: 136 to 148) manufactured by DIC Co.,

EPPN-501HY: EPPN-501HY (thermosetting resin, epoxy equivalent 163 to 175) manufactured by Nippon Kayaku Co.,

MEH-8400: MEH-8400 (curing agent, hydroxyl equivalent of 111) manufactured by Meiwa Chemical Industry Co.,

MEH-8000H: MEH-8000 (curing agent, hydroxyl equivalent of 139 to 143) manufactured by Meiwa Chemical Industry Co.,

2PHZ-PW: 2PHZ-PW (hardener) manufactured by Shikoku Chemical Industry Co.,

TPP-K: TPP-K (curing accelerator) of Hokko Chemical Co.,

TPP-DCA: TPP-DCA (hardening accelerator) of Hokko Chemical Co.,

1200YP: 1200YP (flake type copper powder, average particle size 3.5 mu m, aspect ratio: 10, specific gravity 8.9) manufactured by Mitsui Mining &

EHD: EHD (silver powder, spherical, average particle diameter 0.7 mu m, specific gravity 10.5) manufactured by Mitsui Mining &

[Production of dicing tape with film-type adhesive and film-type adhesive]

(Examples 1 to 3 and Comparative Example 1)

Each component and solvent (methyl ethyl ketone) shown in Table 1 were placed in a stirring pot of a hybrid mixer (HM-500 manufactured by Keans) according to the blending ratio shown in Table 1, and stirred and mixed in a stirring mode for 3 minutes. The resulting varnish was applied to a mold release film (MRA50, manufactured by Mitsubishi Plastics, Inc.) with a die coater and then dried at 130 DEG C for 2 minutes to produce a film-type adhesive having a thickness of 30 mu m.

With respect to Example 1, the ratio of the peak A in the particle diameter range of 0.2 탆 to 0.8 탆 of the conductive particles and the peak B in the particle diameter range of 3 탆 to 15 탆 is also shown in Table 1.

In Example 1, Tetsan Resin SG-280 EK23 and Arufon UC-3510 were used as the thermoplastic resin. Alufon UC-3510 is crosslinked with an epoxy resin because the molecular weight is small (Mw (molecular weight) is 2000) and the number of reactive functional groups (carboxyl groups) is large (acid value representing the amount of carboxyl groups is 70). In addition, TAYSAN RESIN SG-280 EK23 also crosslinks with epoxy resin because it has many reactive functional groups.

That is, Example 1 is an example in which crosslinking of the thermoplastic resin and the thermosetting resin is caused more than in Examples 2 and 3.

In Example 1, 2-phenyl-4,5-dihydroxymethylimidazole (trade name: 2PHZ-PW) is classified as a curing agent. The imidazole-based material has two functions of acting as a curing agent for curing the epoxy resin and acting as a curing accelerator for promoting the reaction between the epoxy resin and the curing agent. In Example 1, since it does not contain a phenol resin, it was classified into a curing agent on a substrate.

[evaluation]

The obtained film-like adhesive was evaluated in the following manner. The results are shown in Table 1.

[Storage elastic modulus at 175 ° C after heat curing]

The film-type adhesive was laminated until the thickness became 300 탆, thereby producing a laminate composed of a film-type adhesive. This laminate was thermally cured at the curing temperature and the curing time shown in Table 1. A rectangular sample having a width of 10 mm was cut from the thermally cured laminate.

The sample was measured at 0 to 200 占 폚 in a tensile measurement mode at a chuck distance of 20 mm and a temperature raising rate of 10 占 폚 / min using a dynamic viscoelasticity measuring apparatus (RSAIII manufactured by Rheometric Scientific Corporation) Was obtained.

10: Dicing tape with film-type adhesive
1: Dicing tape
11: substrate
12: pressure-sensitive adhesive layer
3: Film type adhesive
4: Semiconductor wafer
5: Semiconductor chip
6: adherend
61: adherend for attaching semiconductor chip
7: Bonding wire
8: Sealing resin

Claims (9)

After the step of die bonding the semiconductor chip onto the adherend through the conductive film type adhesive and the step of die bonding the semiconductor chip onto the adherend, the conductive film type adhesive is heated at 100 to 260 DEG C for 3 minutes to 300 Wherein the conductive adhesive layer is formed on the surface of the conductive adhesive layer. The conductive film type adhesive according to claim 1, which has a storage elastic modulus at 175 ° C of from 1 MPa to 3000 MPa after being heated and cured at 200 ° C for 180 minutes. The conductive film type adhesive according to claim 1 or 2, comprising a thermosetting resin, a curing agent for curing the thermosetting resin, and an accelerator for promoting thermosetting. 4. The electrochemical device according to any one of claims 1 to 3, further comprising conductive particles,
The conductive particles are at least one kind selected from the group consisting of gold particles, silver particles, copper particles and coated particles,
Wherein the coated particles comprise core particles and a coating film covering the core particles,
Wherein the coating film includes at least one kind selected from the group consisting of gold, silver and copper,
The conductive particles include plate-like particles having an aspect ratio of 5 or more,
Wherein the content of the plate-like particles in 100 wt% of the conductive particles is 5 wt% to 100 wt%. The conductive film type adhesive according to claim 4, wherein the content of the conductive particles in the conductive film type adhesive is 30 wt% to 95 wt%. 4. The electrochemical device according to any one of claims 1 to 3, further comprising conductive particles,
The conductive particles are at least one kind selected from the group consisting of gold particles, silver particles, copper particles and coated particles,
Wherein the coated particles comprise core particles and a coating film covering the core particles,
Wherein the coating film includes at least one kind selected from the group consisting of gold, silver and copper,
Wherein the conductive particles comprise spherical spherical particles,
Wherein two or more peaks are present in the particle size distribution of the spherical particles,
A peak A is present in the range of 0.2 to 0.8 mu m in diameter, a peak B is present in the range of 3 to 15 mu m in particle diameter,
And the ratio of the particle diameter of the peak B to the particle diameter of the peak A is 5 to 15. The conductive film type adhesive according to claim 6, wherein the content of the conductive particles in the conductive film type adhesive is 30 wt% to 95 wt%. A step of die bonding the semiconductor chip onto an adherend through a conductive film type adhesive,
And a step of thermally curing the conductive film-type adhesive by heating at 100 ° C to 260 ° C for 3 minutes to 300 minutes after the step of die-bonding the semiconductor chip onto the adherend. A semiconductor device obtained by the manufacturing method according to claim 8.

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