KR20160093795A - Test apparatus for survivability evaluation apparatus of asic devices under gamma ray irradiation and test method thereof - Google Patents

Test apparatus for survivability evaluation apparatus of asic devices under gamma ray irradiation and test method thereof Download PDF

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Publication number
KR20160093795A
KR20160093795A KR1020150014422A KR20150014422A KR20160093795A KR 20160093795 A KR20160093795 A KR 20160093795A KR 1020150014422 A KR1020150014422 A KR 1020150014422A KR 20150014422 A KR20150014422 A KR 20150014422A KR 20160093795 A KR20160093795 A KR 20160093795A
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South Korea
Prior art keywords
integrated circuit
light emitting
gamma ray
circuit device
emitting diode
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KR1020150014422A
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Korean (ko)
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조재완
최영수
정경민
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한국원자력연구원
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Priority to KR1020150014422A priority Critical patent/KR20160093795A/en
Publication of KR20160093795A publication Critical patent/KR20160093795A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation

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  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

According to an embodiment of the present invention, a gamma ray survivability evaluating device of an integrated circuit element comprises: an integrated circuit element accommodating unit separated from a gamma ray source; light emitting diodes connected to a plurality of input terminals and a plurality of output terminals of the integrated circuit element accommodated in the integrated circuit element accommodating unit, respectively; and a camera configured to photograph flickering states of the light emitting diodes.

Description

TECHNICAL FIELD [0001] The present invention relates to an apparatus for evaluating gamma ray viability of an integrated circuit device and a method of evaluating the same.

The present invention relates to an apparatus for evaluating the viability of an integrated circuit element and a method of evaluating the same, and more specifically, to an apparatus and method for evaluating gamma ray viability of an integrated circuit element applied to a main system of a nuclear power plant.

 Electronic components used in the main systems of nuclear power plants should be tested for viability under gamma-ray environmental conditions. Currently, the viability evaluation of discrete devices (eg, transistors or FETs) is based on the procedures described in Test Method 1019 of MIL-STD-750 and MIL-STD-883.

However, there is no test standard for gamma-ray environment evaluation for application specific integrated circuits (ASICs) in certain applications, and ASTM F1892-12 Appendix III describes the test procedures for this. Accordingly, in order to evaluate the ASIC device, it is recommended to use an automated test equipment for controlling and evaluating input / output signals of several tens or more I / O terminals.

However, most gamma irradiation facilities do not have automated testing and evaluation facilities dedicated to ASIC devices.

In the following prior art documents, in order to secure the safety of a nuclear power plant, the existing reactor abnormality condition detection device is fully digitized and implemented as an ASIC, thereby minimizing parts repairs, thereby improving reliability and stability. Discloses a technology relating to an abnormality detection apparatus for an abnormality of a reactor using an ASIC which makes it possible to determine the abnormality of the system abnormally and quickly and conveniently for troubleshooting, and does not disclose the technical point of the present invention.

Korean Patent Laid-Open Publication No. 1998-0011521

In order to solve the above problems, an apparatus for evaluating gamma ray viability of an integrated circuit device according to an embodiment of the present invention and a method for evaluating gamma ray survival property of an integrated circuit device according to another embodiment of the present invention has the following problems.

It is an object of the present invention to provide an evaluation apparatus and an evaluating method which can evaluate the survivability of an ASIC device in a gamma-ray environment on-line using a simple configuration.

The solution to the problem of the present invention is not limited to those mentioned above, and other solutions not mentioned can be clearly understood by those skilled in the art from the following description.

An apparatus for evaluating gamma ray viability of an integrated circuit device according to an embodiment of the present invention includes: an integrated circuit element accommodating unit spaced apart from a gamma ray source; A light emitting diode connected to a plurality of input terminals and an output terminal of the integrated circuit element accommodated in the integrated circuit element accommodating portion, respectively; And a camera for photographing a blinking state of the light emitting diode.

According to another aspect of the present invention, there is provided a method of evaluating gamma ray survival of an integrated circuit device, comprising: a first step of disposing an integrated circuit device apart from a gamma ray source; A second step of connecting light emitting diodes to a plurality of input terminals and an output terminal of the integrated circuit device, respectively; A third step of applying power to the integrated circuit device and the light emitting diode, respectively; And a fourth step of the camera photographing the blinking state of the light emitting diode.

The apparatus for evaluating the gamma ray viability of an integrated circuit device according to an embodiment of the present invention and the method for evaluating the gamma ray viability of an integrated circuit device according to another embodiment include a control system for a robot system put in place of a notification person of a nuclear power plant, It is possible to estimate the life span of the gamma ray dose rate environment of the built-in integrated circuit device with a simple configuration.

In addition, it can be used as an index for predicting the robustness of the robot control circuit built in the robot system.

The effects of the present invention are not limited to those mentioned above, and other effects not mentioned may be clearly understood by those skilled in the art from the following description.

1 is a schematic view showing an apparatus for evaluating gamma ray viability of an integrated circuit device according to an embodiment of the present invention.
2 is a graph showing the intensity of a gamma ray source according to a distance from a gamma ray source.
3 is a time-wise diagram illustrating a gamma ray viability evaluation method of an integrated circuit device according to another embodiment of the present invention.
FIG. 4 to FIG. 6 show an example of a camera photographing screen in the evaluation of the gamma ray viability of the integrated circuit device according to an embodiment of the present invention and the evaluation method of gamma ray viability of the integrated circuit device according to another embodiment It's a picture.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It is to be noted that the accompanying drawings are only for the purpose of facilitating understanding of the present invention, and should not be construed as limiting the scope of the present invention with reference to the accompanying drawings.

Hereinafter, an apparatus for evaluating a gamma ray viability of an integrated circuit device according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. FIG. 1 is a schematic view of an apparatus for evaluating gamma ray viability of an integrated circuit device according to an embodiment of the present invention, and FIG. 2 is a graph showing intensity of a gamma ray source according to a distance from a gamma ray source.

1, an apparatus for evaluating the gamma ray viability of an integrated circuit device according to an embodiment of the present invention may include an integrated circuit device accommodating unit 300, a light emitting diode 400, and a camera 500 have.

The integrated circuit element accommodating portion 300 is disposed apart from the gamma ray source 100 and accommodates the integrated circuit element 200 to be evaluated so that the entire integrated circuit element 200 is irradiated with the gamma ray emitted from the gamma ray source 100 It is preferable to be formed so as to be uniformly received.

The light emitting diode 400 is connected to a plurality of input terminals and output terminals of the integrated circuit device 200 and is a driving circuit for confirming the operation of the specific function of the integrated circuit device 200. Specifically, an application program that performs a specific function is embedded in the integrated circuit device 200, and an output pulse signal is input to the I / O circuit of the integrated circuit device 200 to check the operation state of a specific application program embedded in the integrated circuit device 200. [ O terminal. When a problem occurs in the integrated circuit device 200 due to the cumulative gamma ray exposure, a specific application program implanted in the integrated circuit device 200 is abnormally operated in response to such a pulse signal. And accordingly, the light emitting diode 400 blinks and also exhibits an abnormal state. Therefore, when an error occurs in the integrated circuit device 200, it is possible to visually confirm whether the integrated circuit device 200 is abnormal through the light emitting diode 400.

1, it is preferable that the light emitting diodes 400 are disposed apart from the integrated circuit element accommodating unit 300. This is because the light emitting diodes 400 are arranged in a direction away from the integrated circuit device accommodating unit 300 by the influence of the gamma rays generated from the gamma source 100 . Specifically, in the case of a low-level gamma ray irradiation facility, when the light emitting diode 400 is disposed at a distance of 110 cm or more from the integrated circuit device 200, the intensity of the gamma-ray source is inversely proportional to the square of the distance. 400 is exposed to a magnitude corresponding to 1/10 of the intensity of the gamma rays received by the integrated circuit device 200.

2, the integrated circuit device 200 is disposed at a distance of 40 cm from the gamma-ray source 100, and the integrated circuit device 200 is disposed at a distance of 40 cm from the gamma- Assuming that the light emitting diode 400 which is a driving circuit for grasping the characteristics of the integrated circuit device 200 is disposed at a distance of 140 cm from the gamma ray source 100, the light emitting diode 400 is arranged in a direction away from the radiation dose of the integrated circuit device 200 It can be said that the probability that the light emitting diode 400 first fails due to cumulative gamma ray exposure is much lower than that of the integrated circuit device 200 because the gamma ray is exposed to a small amount of 1/10 or more.

 Alternatively, the integrated circuit device 200 and the power supply unit for supplying power to the light emitting diode 400 may be separately provided. Alternatively, the power supply unit for supplying power to the integrated circuit device 200 and the light emitting diode 400 may be separately provided. . This prevents the integrated circuit device 200 from failing at the same time due to the failure of the SMPS when the power supply of the integrated circuit device 200 and the power supply of the light emitting diode 400 are made the same power source (SMPS, Switched Mode Power Supply) . Specifically, as shown in FIG. 1, a first power supply unit 310 for supplying power to the integrated circuit device 200 and a second power supply unit 410 for supplying power to the light emitting diode 400 And the first power supply unit 310 and the second power supply unit 410 should be separately formed. A separate lead block may be disposed between the integrated circuit device 200 and the first power supply 310 and between the LED 400 and the second power supply 410 as shown in FIG. It is preferable that the light emitting diode 400 and the second power supply unit 410 minimize the gamma ray exposure by the gamma ray source 100.

On the other hand, it is preferable to employ a high-brightness power LED as the light emitting diode 400. The high-brightness power LED is made of GaAs-based direct band-gap material, and is very strong against gamma rays because of the band gap energy compared with Si, which is the material of the integrated circuit device 200. Further, since the high-brightness Power LED has the high-frequency switching characteristic, it can sufficiently cope with the high clock frequency of the integrated circuit device 200. [ On the other hand, the abnormal state of the integrated circuit device 200 due to the cumulative gamma ray exposure appears in the light emission pattern of the high-brightness power LED, and the fail state of the integrated circuit device 200 is detected by observing it with a camera 500 In the case of a general light emitting diode, since the bulb is formed of a plastic cap, the energy of the light emitting surface is hardly observed in the camera 500 to which the IR filter 510 is attached, It is difficult to distinguish the speckle component of the observation camera that appears during the test. On the other hand, in the case of the high-brightness Power LED, since the bulb of the high-brightness Power LED is formed of Si Resin, the pattern of the light emitting surface of the Power LED can be observed in the camera 500 having the IR filter 510 as it is, Can be solved.

The camera 500 is configured to photograph the blinking state of the light emitting diode 400, and an infrared filter 510 (IR Filter) is attached as shown in FIG. The reason why the infrared filter 510 is attached to the camera 500 is to observe the light emission pattern of the high-brightness Power LED, and this is observed in the backlight environment from the viewpoint of the camera 500. [ Therefore, in order to efficiently observe the light emission pattern of the high-power LED, it is necessary to block most of the light in the visible light wavelength range of the Power LED, so that it is preferable to attach the infrared filter 510. [

Further, the image captured by the camera 500 is transmitted to the computer 600 disposed outside, and the computer 600 receives an error in the blinking state of the light emitting diode 400 from the image transmitted from the camera 500 It can be confirmed whether or not it has occurred. It is also possible to calculate the lifetime of the integrated circuit device 200 based on the gamma ray dose rate received by the integrated circuit device 200 and the occurrence time of the blinking state of the light emitting diode 400 or the like.

Hereinafter, a gamma ray survival evaluation method according to another embodiment of the present invention will be described with reference to FIG. 3 is a time-wise diagram illustrating a gamma ray viability evaluation method of an integrated circuit device according to another embodiment of the present invention.

3, the method for evaluating gamma-ray survival according to another embodiment of the present invention includes a first step S100 of placing an integrated circuit device 200, a step S100 of placing an integrated circuit device 200 on an I / O terminal 200 of the integrated circuit device 200, A third step S300 of applying a drive signal to the integrated circuit device 200 and a third step S300 of connecting the light emitting diode 400 to the integrated circuit device 200. The camera 500 senses the blinking state of the light emitting diode 400, (S400).

For each of the above steps, the gamma ray survival evaluating apparatus according to an embodiment of the present invention may be applied to all of the above-described embodiments, and a detailed description thereof will be omitted.

Hereinafter, experimental results of the gamma ray viability evaluating apparatus and the gamma ray survival evaluating method according to another embodiment of the present invention will be described with reference to FIGS. 4 to 6. FIG. FIG. 4 to FIG. 6 show an example of a camera photographing screen in the evaluation of the gamma ray viability of the integrated circuit device according to an embodiment of the present invention and the evaluation method of gamma ray viability of the integrated circuit device according to another embodiment It's a picture.

First, the survivability evaluation was performed on three specimens (TI # 1, TI # 2, TI # 3) of the integrated circuit device 200 and the gamma ray dose rate was about 100 Gy / h. The experiment was continued until the abnormal state of the light emission pattern of the high-brightness Power LED was observed due to fail of the circuit element 200. An image of the camera 500 to which the infrared filter 510 was attached was stored at intervals of one minute.

FIG. 4 is an observation image immediately before irradiation with gamma rays. In order to distinguish three specimens (TI # 1, TI # 2, and TI # 3), the emission patterns of the high-power LED are set differently. FIG. 5 shows an observation image immediately after the gamma ray source is positioned at the irradiation position, and a white spot by the gamma ray source can be seen. FIG. 6 shows that the second test piece (TI # 2) fails due to the cumulative gamma ray exposure at about 5 hours after the start of the gamma ray irradiation test, and the emission pattern of the high-luminance power LED is not observed.

By multiplying the gamma ray dose rate by the gamma ray irradiation time, it is possible to estimate the lifetime of the integrated circuit device 200 according to the accumulated gamma ray exposure dose.

The embodiments and the accompanying drawings described in the present specification are merely illustrative of some of the technical ideas included in the present invention. Therefore, it is to be understood that the embodiments disclosed herein are not intended to limit the scope of the present invention but to limit the scope of the present invention. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents. It should be interpreted.

100: gamma ray
200: integrated circuit device
300: integrated circuit element accommodating portion
310: first power supply unit
400: light emitting diode
410: second power supply
500: camera
510: Infrared filter

Claims (10)

An integrated circuit element receiving portion 300 disposed apart from the gamma ray source 100;
A light emitting diode 400 connected to a plurality of input terminals and an output terminal of the integrated circuit device 200 housed in the integrated circuit device receiving portion 300; And
A camera 500 for photographing the blinking state of the light emitting diode 400;
Wherein the gamma ray survival rate of the integrated circuit element is determined based on the gamma ray.
The method according to claim 1,
Wherein the light emitting diode (400) is disposed apart from the integrated circuit element receiving portion (300).
The method according to claim 1,
A first power supply unit 310 for supplying power to the integrated circuit device 200; And
A second power supply unit 410 for supplying power to the light emitting diode 400;
Further comprising:
Wherein the first power supply unit (310) and the second power supply unit (410) are formed separately from each other.
The method according to claim 1,
Wherein the light emitting diode (400) is a high brightness power light emitting diode.
The method according to claim 1,
And an infrared filter (510) is attached to the camera (500).
A first step S100 of disposing the integrated circuit elements 200 apart from the gamma ray source 100;
A second step S200 of connecting the light emitting diodes 400 to a plurality of input terminals and output terminals of the integrated circuit device 200, respectively;
A third step (S300) of applying power to the integrated circuit device (200) and the light emitting diode (400), respectively; And
A fourth step S400 of the camera 500 photographing the blinking state of the light emitting diode 400;
Wherein the method comprises the steps of:
The method according to claim 6,
Wherein the light emitting diode (400) is disposed apart from the integrated circuit device (200).
The method according to claim 6,
A first power supply unit 310 for supplying power to the integrated circuit device 200 and a second power supply unit 410 for supplying power to the light emitting diode 400 may include a gamma ray survival evaluation Way.
The method according to claim 6,
Wherein the light emitting diode (400) is a high brightness power light emitting diode.
The method according to claim 6,
And an infrared filter (510) is attached to the camera (500).
KR1020150014422A 2015-01-29 2015-01-29 Test apparatus for survivability evaluation apparatus of asic devices under gamma ray irradiation and test method thereof KR20160093795A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980011521A (en) 1996-07-25 1998-04-30 이호림 Reactor Abnormal State Detection Device and Method using ASIC

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980011521A (en) 1996-07-25 1998-04-30 이호림 Reactor Abnormal State Detection Device and Method using ASIC

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