KR20160091469A - Dc port for high voltage electro static chuck - Google Patents
Dc port for high voltage electro static chuck Download PDFInfo
- Publication number
- KR20160091469A KR20160091469A KR1020150011083A KR20150011083A KR20160091469A KR 20160091469 A KR20160091469 A KR 20160091469A KR 1020150011083 A KR1020150011083 A KR 1020150011083A KR 20150011083 A KR20150011083 A KR 20150011083A KR 20160091469 A KR20160091469 A KR 20160091469A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode rod
- port
- insulating tube
- electrostatic chuck
- base material
- Prior art date
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Abstract
The present invention relates to a structure of a DC port for an electrostatic chuck. A conductive electrode rod 102 having a lower end connected to an upper surface side of the insulator base 107 and a flange 111 having a radial shape at a lower end thereof and the electrode rod 102 Wherein the electrode rod 102 is inserted into the hollow of the inside of the insulator base 107 and the flange 111 is connected to the upper surface of the insulator base 107, And an upper end portion (108) exposed upward from an upper surface of the insulating tube (103), wherein the upper end portion (108) includes a flat upper end surface (109) And an inclined surface 110 reaching the interface between the upper surface of the insulating tube 103 and the upper surface of the insulating tube 103. The slope of the inclined surface 110 is preferably 70 ° or less.
Description
The present invention relates to a DC port for an electrostatic chuck, and more particularly, to an improved DC port for an electrostatic chuck in which arcing is not generated by maintaining a completely insulated state between an electrode rod constituting a DC port and a base material of the electrostatic chuck .
Generally, a chuck is used to fix a wafer in a semiconductor device manufacturing process. Particularly, in order to minimize the generation of particles in a plasma processing process, electrostatic chucks, which can be attached and detached without contacting with wafers by using electrostatic force rather than conventional mechanical clamps or vacuum chucks, are mainly used.
The electrostatic chuck is formed by forming a dielectric layer on a plate-shaped aluminum base material, sandwiching an electrode layer therebetween, and applying a DC voltage to the electrode layer to adsorb and fix the semiconductor substrate with an electrostatic force formed on the upper surface of the dielectric layer. The dielectric layer is formed by mainly spraying a dielectric such as alumina to prevent the electrostatic chuck from being etched by a plasma process gas in a plasma processing process.
As a conventional technique related to such an electrostatic chuck, the structure of the electrostatic chuck is disclosed in " Electrostatic Chuck and Method of Manufacturing the Same "and Published Patent Application No. 10-2012-0000745 "Ceramic electrostatic chuck" is disclosed in Jan. 4, 2012, and a manufacturing method of an electrostatic chuck using a spray coating is disclosed in Patent No. 10-0982649 (registered on September 10, 2010, September 9, 2010). &Quot; A spray coating method, an electrostatic chuck manufacturing method using the same, and an electrostatic chuck ").
Hereinafter, particularly, in the structure of such a general electrostatic chuck, a DC port to which a DC voltage is applied will be described in detail with reference to FIGS. 1 to 5. FIG.
1 shows a
On the other hand, the
After the
Fig. 5 shows an example of forming the alumina lower
However, the present inventors have found that in the thermal spray coating process of the insulating film, the upper end of the
2 to 4, the upper end of the
The cause of such a problem is the presence of the
As described above, in the conventional structure, since the
11 is a microscope photograph of a conventional DC port structure for an electrostatic chuck as described above, wherein the coating state of the lower
It is therefore necessary to prevent the uneven coating of the lower
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems of the prior art and provides a DC port for electrostatic chuck And an object of the present invention is to provide an improved structure.
According to an aspect of the present invention, there is provided an insulator comprising: an insulator base; a conductive electrode rod having a lower end coupled to an upper surface side of the insulator base; and a radial flange at a lower end, Wherein the flange includes an insulating tube coupled to an upper surface side of the insulator base, wherein the electrode rod includes an upper end exposed upward from an upper surface of the insulating tube, the upper end having a flat upper surface, And an inclined surface extending from the upper surface to an interface between the electrode rod and the upper surface of the insulating tube.
At this time, the slope of the inclined surface may be 70 ° or less.
The insulator base includes a step portion surrounding the outer circumferential surface of the upper surface, and the height of the step portion is equal to the height of the flange, whereby the flange is inserted into the upper surface region in the step, .
1 is an exploded perspective view showing a DC port used in an electrostatic chuck.
2 is a partial cross-sectional view of an electrostatic chuck coupled with a prior art DC port.
FIG. 3 is a partially enlarged cross-sectional view showing the upper end structure of the conventional DC port shown in FIG. 2. FIG.
FIG. 4 is a partially enlarged cross-sectional view showing a state before the lower insulating film, the electrode layer, and the upper insulating film are formed on the upper surface of the base material, showing that the conventional art DC port is coupled to the aluminum base material constituting the electrostatic chuck.
5 is a partial enlarged cross-sectional view illustrating a spray coating for forming a lower insulating film on a top surface of a base material to which a DC port of the related art is coupled.
6 is an exploded perspective view showing the DC port of the present invention used in the electrostatic chuck.
7 is a partial cross-sectional view of an electrostatic chuck combined with a DC port of the present invention.
FIG. 8 is a partially enlarged cross-sectional view showing the upper end structure of the DC port according to the present invention shown in FIG.
9 is a partial enlarged cross-sectional view showing a state before the lower insulating film, the electrode layer, and the upper insulating film are formed on the upper surface of the base material, showing that the DC port according to the present invention is coupled to the aluminum base material constituting the electrostatic chuck.
10 is a partially enlarged cross-sectional view illustrating a spray coating process for forming a lower insulating film on a top surface of a base material to which a DC port according to the present invention is attached.
11 is a microscope photograph of a conventional DC port structure for an electrostatic chuck.
Figs. 12A to 12C are micrographs of a DC port structure manufactured according to the specifications of Table 1, wherein Fig. 12A is a comparative example 1, Fig. 12B is a first embodiment of the present invention, Fig. 12C is a second embodiment of the present invention Respectively.
Hereinafter, the present invention will be described in detail with reference to FIGS. 6 to 10. FIG.
As best shown in Figures 6-8, the present invention provides a
The lower
The upper and lower insulating
6, the
In the present invention, the inclination angle of the
The height of the
Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, it is to be understood that the present invention is not limited to the following examples, but the present invention is not limited thereto.
Example
In order to compare the electrical characteristics of the conventional DC port and the
Particularly, in the comparative example 1, the exposed
Then, when 500 V was applied to the DC port according to Comparative Example 1, Comparative Example 1, and Examples 1 and 2 through the respective electrode rods, the respective insulation resistance values were measured. Table 1 below summarizes the structures of Examples 1 to 3 and Comparative Examples and their insulation resistance values.
(Prior art)
Referring to Table 1, the
In contrast, in Comparative Example 1, the
12A to 12C are microscope photographs of the DC port structure manufactured as described above. FIG. 12A is a microscope photograph of
As described above, according to the present invention, in the DC port for electrostatic chuck, the
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, and variations and modifications may be made without departing from the spirit and scope of the invention. , Additions and the like are to be regarded as belonging to the claims. For example, in FIG. 6, a step is formed on the outer peripheral surface of the
101; A lower electrode, a lower electrode, a tungsten electrode layer, an upper insulating layer, a plasma gun, a plasma torch, 116: A warrior fire.
Claims (3)
The electrode rod 102 includes an upper end portion 108 exposed upward from an upper surface of the insulating tube 103. The upper end portion 108 includes a flat upper end surface 109 and a lower end And an inclined surface (110) extended to an interface between the electrode rod (102) and the upper surface of the insulating tube (103).
Wherein a slope of the inclined surface (110) is 70 DEG or less.
The insulator base 107 includes a step portion surrounding the outer circumferential surface of the upper surface and the height of the step portion is equal to the height of the flange 111 so that the flange 111 is inserted into the upper surface region of the step And is coupled to the upper surface side of the insulator base (107).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150011083A KR20160091469A (en) | 2015-01-23 | 2015-01-23 | Dc port for high voltage electro static chuck |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020150011083A KR20160091469A (en) | 2015-01-23 | 2015-01-23 | Dc port for high voltage electro static chuck |
Publications (1)
Publication Number | Publication Date |
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KR20160091469A true KR20160091469A (en) | 2016-08-03 |
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Family Applications (1)
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KR1020150011083A KR20160091469A (en) | 2015-01-23 | 2015-01-23 | Dc port for high voltage electro static chuck |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190083746A (en) * | 2018-01-05 | 2019-07-15 | 와이엠씨 주식회사 | Dc port for high voltage electrostatic chuck and electrostatic chuck having the same |
-
2015
- 2015-01-23 KR KR1020150011083A patent/KR20160091469A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190083746A (en) * | 2018-01-05 | 2019-07-15 | 와이엠씨 주식회사 | Dc port for high voltage electrostatic chuck and electrostatic chuck having the same |
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