KR20160087329A - Receiver, Wireless Terminal, Operating Method of Wireless Terminal - Google Patents

Abstract

Provided are a receiver, a wireless terminal, and a method for operating a wireless terminal. The receiver according to an embodiment of the present invention comprises: a first amplifier for receiving and amplifying a first radio frequency (RF) input signal to output an RF output signal corresponding to a first carrier included in a first frequency band; and a first sub-amplifier for receiving a first internal signal from the first amplifier and amplifying the received first internal signal to output an RF output signal corresponding to a second carrier included in the first frequency band when a mode signal indicates a first mode. The receiver of the present invention can efficiently process a signal received through a wireless communication network.

Description

[Technical Field] The present invention relates to a receiver, a wireless terminal, and an operating method of a wireless terminal.

The present disclosure relates to a receiver, a wireless terminal capable of efficiently processing a signal upon reception of a signal through a wireless communication network, and a method of operation of the wireless terminal.

The transmitter of the wireless terminal modulates the data into an RF signal by transmitting the RF signal on a radio frequency carrier signal, amplifies the modulated RF signal, and transmits the amplified RF signal to the wireless communication network. A receiver of a wireless terminal receives an RF signal from a wireless communication network, amplifies and demodulates the RF signal. In order to transmit and receive more data, the wireless terminal supports the carrier aggregation function, that is, the transmission and reception of the RF carrier signal modulated by the multicarrier. Even if the carrier integration function is applied, the degradation of the noise feature or the gain feature should be prevented, and the gain adjustment of the independent receiver between each RF carrier signal should be possible.

There is provided a receiver, a wireless terminal, and a method of operating a wireless terminal capable of efficiently processing a received signal.

The receiver includes: a first amplifier receiving and amplifying a first RF input signal and outputting the RF output signal corresponding to a first carrier included in the first frequency band; And receiving a first internal signal from the first amplifier and amplifying the first internal signal when the mode signal indicates a first mode and outputting the RF internal signal as an RF output signal corresponding to a second carrier included in the first frequency band And a first sub amplifier.

A wireless terminal according to an exemplary embodiment performs impedance matching on a first received signal filtered by a first frequency band to output a first RF input signal (Radio Frequency input signal) A first input unit for outputting a first signal; The first RF input signal received through one first input terminal is amplified in both the inter-band CA mode and the intra-band CA mode, A first amplifying unit outputting at least one first RF output signal; And a first receiver for down-converting at least one of the at least one first RF output signal to a baseband.

According to another embodiment, a wireless terminal includes an antenna for receiving a signal transmitted through a Long Term Evolution Advanced (LTE-A) communication network; A filter for filtering the received signal at each frequency band; And a plurality of receivers for processing the received signal filtered at each frequency band by the filter and processing the received signal into a baseband signal, wherein at least one of the plurality of receivers includes a first node and a second node, And an RF input signal which is impedance-matched to the filtered reception signal is applied to a gate and is connected to a first transistor and a source smaller than the first transistor, A first amplifier connected to the drain of the first transistor at the first node and having a drain connected to the first output node to output an RF output signal corresponding to the first carrier; A third transistor activated in an intra-band CA mode and gated by a first internal signal applied between the third node and the fourth node and applied from the first node, A fourth transistor that has a source connected to the drain of the third transistor at the third node and a drain connected to the second output node and outputs an RF output signal corresponding to a second carrier in the same frequency band as the first carrier, And a first sub-amplifier including a transistor.

According to the method of operation of the receiver, the wireless terminal and the wireless terminal of the present disclosure, when the multi-carriers are included in different frequency bands, the RF output signal is outputted through the amplifiers receiving the RF input signals including the respective carriers, When the multi-carriers are included in the same frequency band, the RF output signal for one carrier is outputted through an amplifier for receiving the RF input signal including the corresponding carrier, while the RF output signal for the other carrier is outputted from the amplifier The input impedance of the receiver can be the same regardless of whether the multi-carriers are included in different frequency bands or included in the same frequency band. Accordingly, it is possible to prevent a loss that may be caused by varying the impedance matching condition according to each operation mode. Thus, by not lowering the noise characteristic or the gain characteristic, the power consumption of the wireless terminal including the receiver or the receiver can be reduced, and the received signal can be processed correctly.

According to the method of operation of the receiver, the wireless terminal and the wireless terminal of the present disclosure, the signal amplified by the voltage gain of one amplifier is transmitted to the other amplifier, and the RF carrier signal modulated by the multi-carrier of the same frequency band is amplified, Power consumption can be reduced, and noise characteristics or gain characteristics can be maintained. Therefore, the signal reception sensitivity in the wireless terminal can be improved, and the reliability of the wireless terminal can be improved.

Therefore, according to the method of operation of the receiver, the wireless terminal, and the wireless terminal of the present disclosure, the received signal can be efficiently processed.

1 is a diagram illustrating a first receiver in accordance with one embodiment.
FIGS. 2 to 4 are views for explaining a carrier accumulation technique according to an embodiment, respectively.
5A and 5B are diagrams illustrating a wireless terminal, according to one embodiment, respectively.
6A and 6B are diagrams illustrating a wireless terminal, according to one embodiment, respectively.
Figs. 7A to 7C are diagrams for explaining an example in which the wireless terminals in Fig. 6A operate in a non-CA mode, an inter-band CA mode and an intra-band CA mode, respectively.
8 is a diagram illustrating a wireless terminal in accordance with one embodiment.
Figs. 9A to 9C are diagrams showing examples in which the wireless terminals in Fig. 8 operate in the non-CA mode, the inter-band CA mode and the intra-band CA mode, respectively.
FIG. 10 is a diagram showing an example of the first amplifying unit and the second amplifying unit in FIG. 8;
Figs. 11A to 11C are diagrams showing examples in which the first amplifying unit and the second amplifying unit in Fig. 10 operate in the non-CA mode, the inter-band CA mode, and the intra-band CA mode, respectively.
12 is a diagram showing an example in which the first amplifying unit and the second amplifying unit in Fig. 10 operate in the intra-band CA mode.
Figs. 13 to 17 are diagrams showing examples of the first amplifying unit and the second amplifying unit in Fig. 8, respectively.
18 is a diagram illustrating a first receiver in accordance with one embodiment.
19 is a diagram illustrating a wireless terminal in accordance with one embodiment.
20 is a diagram illustrating a first receiver in accordance with an embodiment.
21 is a diagram illustrating an LNA (Low Noise Amplifier) according to an embodiment.
22 is a diagram illustrating a computing system in accordance with one embodiment.
23 is a diagram illustrating a wireless terminal in accordance with one embodiment.

The embodiments according to the principles of the present invention set forth herein are provided to enable those skilled in the art to more fully understand the spirit of the present invention. The embodiments presented herein may be modified in various forms, and the scope of the present invention is not limited to the embodiments shown in this specification. It is to be understood that the scope of the present invention includes all modifications, equivalents, and alternatives falling within the scope and spirit of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS [0027] Reference will now be made, by way of example, to the accompanying drawings, in which: In the attached drawings, the dimensions of the structures may be shown enlarged or reduced in size to facilitate a clear understanding of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present invention. The singular < RTI ID = 0.0 > expressions < / RTI > include plural expressions, unless the context clearly dictates otherwise. As used herein, the terms "comprises" or "having", etc., are to be understood as specifying the presence of listed features, and not precluding the presence or addition of one or more other features. In this specification, the term "and / or" is used to include any and all combinations of one or more of the listed features. In this specification, terms such as " first ", "second ", and the like are used only to intend to distinguish one feature from another to describe various features, and these features are not limited by these terms. In the following description, when the first characteristic is described as being connected, coupled or connected to the second characteristic, it does not exclude that the third characteristic may be interposed between the first characteristic and the second characteristic.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, embodiments will be described with reference to the accompanying drawings.

1 is a diagram illustrating a first receiver in accordance with one embodiment. 1, a first receiver RCV1 according to an embodiment includes a first amplifier 12 and a first amplifier 12 includes a first amplifier 12a and a first sub-amplifier 12b ). The first amplifier 12a receives and amplifies a first RF input signal (RFIN1) modulated by at least two carriers of the same frequency band in a first mode, And outputs it as a signal RFOUT11. The first sub amplifier 12b amplifies the first internal signal XINT1 applied from the first amplifier 12a and outputs the amplified first internal signal XINT1 as the first RF output signal RFOUT12. In Fig. 1, an example in which the first RF input signal RFIN1 is modulated by two carriers, i.e., a first carrier? 1 and a second carrier? 2 is shown. However, the present invention is not limited to this, and the first receiver RCV1 according to an embodiment may process the first RF input signal RFIN1 modulated by two or more carriers as illustrated in FIG. 2 .

FIGS. 2 to 4 are views for explaining a carrier accumulation technique according to an embodiment, respectively. Referring first to FIG. 2, a technique for Carrier Aggregation has emerged in which one or more base stations combine and operate multiple frequency bands in order to meet the demand for increased bit rate . LTE (Long Term Evolution), which is one of the mobile network, can realize a data transmission speed of 100Mbps, so that large capacity video can be transmitted and received smoothly in a wireless environment. According to the LTE standard, a multi-carrier technology is provided which selects one of several frequencies in consideration of data traffic congestion and the like to provide optimal communication quality to a user. Multicarrier technology distributes frequencies used by many users to different frequencies, thereby eliminating data concentration at one frequency. For example, with multicarrier technology, if there are a large number of users using 800MHz frequencies, data can be automatically distributed at 1.8GHz frequency.

However, with the multi-carrier technology on the LTE standard, the actual transmission speed does not increase even if the perceived transmission rate increases. Accordingly, an LTE-A (LTE-Advanced) technology capable of being implemented at a higher data rate has been developed. Carrier integration technology is a frequency extension technique in which a plurality of frequency bands are combined and operated in one base station. 2 shows an example in which the data transmission rate can be increased up to 5 times by combining five frequency bands on the LTE standard by carrier integration technology. Since each carrier (carrier 1 to carrier 5) in FIG. 2 is a carrier defined in LTE and one frequency bandwidth is defined up to 20 MHz in the LTE standard, the other mobile terminal 200 in one embodiment is The bandwidth can improve the data rate. A carrier defined in LTE may be referred to as an element carrier.

FIG. 2 shows an example in which only carrier waves defined in LTE are combined. However, the present invention is not limited thereto. As shown in FIG. 3, carriers of different wireless communication networks can be combined. Referring to FIG. 3, in addition to the LTE, the frequency bands on the 3G and Wi-fi standards can be combined together when the frequency bands are combined by the carrier integration technique. In this way, LTE-A adopts carrier integration technology to enable faster data transmission. 2 and 3, the wireless terminal 200 according to one embodiment may receive an input coupled with a plurality of carriers, but for convenience of description, unless otherwise noted, It is described as an example in which two carriers operate as combined inputs.

Next, referring to FIG. 1 and FIG. 4, the frequency bands of the first carrier 1 and the second carrier 2 of the signal received through the wireless communication network may be the same or different. For example, the first carrier? 1 may be set to the frequency of the first frequency band BA and the second carrier? 2 may be set to the frequency of the second frequency band BB (FIG. 4A) ). The first frequency band BA is a frequency band from the first frequency f1 to the second frequency f2 and the second frequency band BB is a frequency band from the third frequency f3 to the fourth frequency f4. Frequency band. For example, the first carrier? 1 may be a carrier wave of 800 MHz and the second carrier? 2 may be a carrier file of 1.8 GHz.

Alternatively, both the first carrier 1 and the second carrier 2 may be set to the frequencies of the first frequency band BA (FIGS. 4 (b) and 4 (c)). At this time, the first carrier 1 and the second carrier 2 may be contiguous in the same frequency band (Fig. 4 (b)) or non-contiguous in the same frequency band (C) of FIG.

FIG. 4 shows an example in which the first frequency band BA and the second frequency band BB are set to different bandwidths. For example, the first frequency band BA may be set to a bandwidth of 20 MHz, and the second frequency band BB may be set to a bandwidth of 10 MHz. However, the present invention is not limited thereto. The bandwidths of the first frequency band BA and the second frequency band BB may be set to the same bandwidth. For example, both the first frequency band BA and the second frequency band BB can be set to a bandwidth of 20 MHz.

The first receiver RCV1 may operate in different modes depending on whether the first carrier wave 1 and the second carrier wave 2 exist in the same frequency band or in different frequency bands. 4A, when the first carrier 1 and the second carrier 2 are present in different frequency bands, the first receiver RCV1 receives the inter-band CA mode mode. 4 (b) and 4 (c), when the first carrier 1 and the second carrier 2 exist in the same frequency band, the first receiver RCV1 receives the intra-band CA mode intra-band Carrier Aggregation mode). The first mode described above may represent an intra-band mode. In addition, the first receiver RCV1 may operate in a non-CA mode in which the carrier integration technique is not applied.

The first receiver RCV1 according to one embodiment can support both the non-CA mode, the inter-band CA mode and the intra-band CA mode by one structure. In a non-CA mode and an inter-band CA mode, a first receiver RCV1 according to an embodiment receives a first RF output signal RFOUT11 for a first carrier? 1 through a first amplifier 12a, In the intra-band CA mode, the first RF output signal RFOUT11 for the first carrier (omega 1) through the first amplifier 12a while outputting the first RF output signal RFOUT11 for the arbitrary node node (the first internal signal XINT1) and processes it as the first RF output signal RFOUT12 for the second carrier (omega 2). Therefore, the input impedances of the first receiver RCV1 in the non-CA mode, the inter-band CA mode and the intra-band CA mode may be the same. Since the input impedance in each mode is the same, it is not necessary to newly perform the input impedance matching every conversion of the mode, and the loss can be reduced accordingly.

As such, the first receiver RCV1 according to an embodiment can operate more stably, process the first RF input signal RFIN1 more accurately, or reduce power consumption. This will be described in more detail. For reference, the first frequency band and the second frequency band described below may refer to the first frequency band BA and the second frequency band BB of FIG. 4, respectively.

5A and 5B are diagrams illustrating a wireless terminal, according to one embodiment, respectively. Referring to FIG. 5A, the wireless terminal 500a may include an antenna (ATN), a plurality of function blocks (FB), a transmitter (TRM), and a receiver (RCV). The plurality of functional blocks FB can perform the respective set operations. For example, one of the plurality of function blocks FB may be a central processing unit (CPU) for controlling the operation of the wireless terminal 500a, a DSP (Digital Signal Processor) for converting an analog signal into a digital signal at a high speed, and the like.

The transmitter TRM amplifies, filters and frequency up-converts information or data processed in a plurality of functional blocks FB and transmits the amplified signal to an analog signal transmittable to a wireless communication network Can be converted. A plurality of transmitters (TRMs) may be provided to perform the above operations separately for each frequency band. For example, one of the transmitters TRM may process the signal of the first frequency band BA in FIG. 4 and the other may process the signal of the second frequency band BB.

The signal processed by the transmitter TRM is output from the wireless terminal 500a to the base station (not shown) via the antenna ATN. The antenna ATN may also receive a signal from the base station. 5A illustrates that one terminal (ATN) is included in the wireless terminal 500a. However, the present invention is not limited thereto, and a plurality of antennas (ATN) may be provided. In addition, the antenna ATN may perform signal transmission only or signal reception only. 5A shows that the antenna ATN is provided outside the wireless terminal 500a for convenience of explanation, but the antenna ATN may be integrated inside the wireless terminal 500a.

The signal received from the antenna ATN is supplied to a corresponding receiver (RCV) of the plurality of receivers (RCV) according to the frequency band. For example, one of the receivers (RCV) may process the signal of the first frequency band BA in FIG. 4 and the other may process the signal of the second frequency band BB. The receiver RCV performs impedance matching, filtering, amplification and frequency down-conversion to a baseband signal received through the antenna ATN.

Although FIG. 5A shows that the transmitter (TRM) and the receiver (RCV) of the wireless terminal 500a are separately provided, the present invention is not limited thereto. As shown in FIG. 5B, the wireless terminal 500b may include a transceiver (TRC) in which a transmitter TRM and a receiver RCV are coupled instead of a transmitter TRM and a receiver RCV separately . In this case, some configurations of the transceiver (TRC) or the transceiver (TRC) may be composed of one module. (E.g., 620 of FIG. 6A), an output (e.g., 630 of FIG. 6A) and a transmit circuit (which may include amplification, filtering, and / Frequency up-converting, etc.) may be implemented as a single chip, such as an RFIC (Radio Frequency Integrated Circuit). Further, although not shown, the wireless terminals 500a and 500b according to one embodiment may further include a separate transmitter (TRM) or receiver (RCV) together with a transceiver (TRC). At least one of the plurality of receivers (RCV) of Figs. 5A and 5B may be implemented with a first receiver (RCV) of Fig.

6A and 6B are diagrams illustrating a wireless terminal, according to one embodiment, respectively. 6A and 6B are shown for the sake of convenience of explanation only in the configuration that operates in the reception operation.

6A, the wireless terminal 600a includes a filter FT and a first receiver RCV1 to process a received signal RSIG input to the wireless terminal 600a via an antenna (ATN) can do. The filter FT filters the received signal RSIG input through the antenna ATN to a corresponding frequency band. For example, the filter FT supplies a first received signal RSIG1 filtered to a frequency band corresponding to the first receiver RCV1 to the first receiver RCV1. For example, the filter FT may transmit the first received signal RSIG1 of the first frequency band BA to the first receiver RCV1. When the first receiver RCV1 is included in the transceiver TRC as in the wireless terminal 600b of FIG. 6B, the first receiver RCV1 is protected from the transmission output during the transmission operation, The filter FT may be implemented as a duplexer in order to protect the transmitter (TRM in FIG.

The first receiver RCV1 may include a first input unit 610, a first amplification unit 620, and a first output unit 630. [ The first input unit 610 performs RF matching such as impedance matching between the filter FT and the first amplification unit 620 with respect to the first reception signal RSIG1 to generate a first RF input signal RFIN1 To the first amplification unit 620, as shown in FIG. The first receiver (RCV1) according to an exemplary embodiment may be configured to perform impedance matching with a single value for various modes of the first input unit 610, thereby improving operation efficiency.

The first amplification unit 620 receives and amplifies the first RF input signal RFIN1 and outputs the first RF output signal RFOUT11 and RFOUT12. The first amplification unit 620 may include a first amplifier 620a and a first sub-amplifier 620b. The first amplification unit 620 may be implemented as an LNA (Low Noise Amplifier). The first amplifier 620a and the first sub-amplifier 620b may be activated together in response to the mode signal XMOD, or only the first amplifier 620a may be activated. When both the first amplifier 620a and the first sub-amplifier 620b are activated, both of the first RF output signals RFOUT11 and RFOUT12 are generated. On the other hand, when only the first amplifier 620a is activated, only one first RF output signal RFOUT11 is generated.

The first output unit 630 down-converts the first RF output signals RFOUT11 and RFOUT12 applied from the first amplifying unit 620 to the baseband and outputs the first baseband signals XBAS11 and XBAS12. The first baseband signals XBAS11 and XBAS12 may be transmitted to, for example, a data processor (not shown) or the like. The first output unit 630 may include a first output circuit 630a and a first sub output circuit 630b. The first output circuit 630a processes the first RF output signal RFOUT11 applied from the first amplifier 620a and outputs the first RF output signal RFOUT11 to the first baseband signal XBAS11 for the first carrier? The first sub output circuit 630b processes the first RF output signal RFOUT12 applied from the first sub amplifier 620b and outputs the processed first RF output signal RFOUT12 to the first baseband signal XBAS12 for the second carrier?

Figs. 7A to 7C are diagrams for explaining an example in which the wireless terminals in Fig. 6A operate in a non-CA mode, an inter-band CA mode and an intra-band CA mode, respectively. However, the following description can be applied to other wireless terminals in addition to the wireless terminal 600a of FIG. 6A. First, with reference to FIG. 7A, a case will be described in which the reception signal RSIG includes only one carrier (the first carrier? 1) without applying the non-CA mode, that is, the carrier accumulation technique. In the non-CA mode, the mode signal XMOD may be applied as the first value VAL1. The filter FT supplies a first received signal RSIG1 filtered to the first frequency band BA to the first receiver RCV1. The first input unit 610 of the first receiver RCV1 supplies a first RF input signal RFIN1 to the first amplification unit 620 by performing impedance matching with respect to the first reception signal RSIG1. The first amplifier 620a of the first amplifier 620 amplifies the first RF input signal RFIN1 and outputs the amplified first RF output signal RFOUT11. The first internal signal XINT1 may be the node voltage of any node of the first amplifier 620a, as described below. The first output circuit 630a of the first output unit 630 down-converts the first RF output signal RFOUT11 transmitted from the first amplifier 620a to the baseband to generate a first RF output signal RFOUT11 corresponding to the first carrier? To the first baseband signal XBAS11. The first sub-amplifier 620b and the first sub-output circuit 630b may be deactivated in response to the mode signal XMOD of the first value VAL1.

Next, referring to Fig. 7B, an operation in a case where the inter-band CA mode, that is, the reception signal RSIG in which the first carrier? 1 and the second carrier? 2 in different frequency bands are combined is input Explain. In the inter-band CA mode, the mode signal XMOD may be applied as the second value VAL2. The filter FT filters the received signal RSIG into the respective frequency bands and outputs a first reception signal RSIG1 including the first carrier 1 of the first frequency band BA to the first receiver RCV1 Can supply. The filter FT may transmit the received signal including the second carrier BB to another receiver (not shown). However, the receiver that processes the received signal including the second carrier (2) can operate in the same manner as the first receiver (RCV1) processes the first received signal (RSIG1) of the first carrier have.

The first input unit 610 of the first receiver RCV1 receives a first RF input signal RFIN1 that has undergone impedance matching with respect to the first received signal RSIG1 of the first carrier 620). The first amplifier 620a of the first amplifier 620 amplifies the first RF input signal RFIN1 and outputs the amplified first RF output signal RFOUT11. The first output circuit 630a may downconvert the first RF output signal RFOUT11 to the baseband and output the first baseband signal XBAS11 corresponding to the first carrier 1. In response to the mode signal XMOD of the second value VAL2, the first sub-amplifier 620b and the first sub-output circuit 630b may be deactivated. The second value VAL2 may be the same as or different from the first value VAL1.

Next, with reference to Fig. 7C, an operation in the case where an intralband CA mode, that is, a reception signal RSIG combining the first carrier? 1 and the second carrier? 2 in the same frequency band is input . In the intra-band CA mode, the mode signal XMOD may be applied as the third value VAL3. The filter FT filters the received signal RSIG and outputs the first received signal RSIG1 of the second carrier wave omega 2 and the first carrier omega 1 contained in the first frequency band BA, , To the first receiver (RCV1).

The first input unit 610 of the first receiver RCV1 supplies a first RF input signal RFIN1 to the first amplification unit 620 by performing impedance matching with respect to the first reception signal RSIG1. The first amplifier 620a of the first amplifier 620 amplifies the first RF input signal RFIN1 and outputs the amplified first RF output signal RFOUT11. The first sub amplifier 620b of the first amplifier 620 amplifies the first internal signal XINT1 applied from the first amplifier 620a and outputs the amplified first internal signal XINT1 as the first RF output signal RFOUT12. The first internal signal XINT1 may be the node voltage of any node of the first amplifier 620a, as described below. The first output circuit 630a of the first output unit 630 down-converts the first RF output signal RFOUT11 transmitted from the first amplifier 620a to the baseband and outputs the downconverted signal to the first carrier? To the first baseband signal XBAS11. The first sub output circuit 630b of the first output unit 630 down-converts the first RF output signal RFOUT12 output from the first sub amplifier 620b to the baseband, To the first baseband signal XBAS12 corresponding to the first baseband signal XBAS2.

8 is a diagram illustrating a wireless terminal according to another embodiment. Referring to FIG. 8, the wireless terminal 800 may include an antenna (ATN), a filter (FT), a first receiver (RCV1), and a second receiver (RCV2). Fig. 8 is shown for the sake of convenience of explanation only in the configuration that operates in the reception operation. The wireless terminal 800 of FIG. 8 may further include at least one other receiver other than the first receiver RCV1 and the second receiver RCV2, and at least one of the other receivers may include a first receiver RCV1, Or the second receiver RCV2.

The antenna ATN receives a reception signal RSIG transmitted through a wireless communication network. The filter (FT) filters the received signal (RSIG) into each frequency band and delivers it to the assigned receiver for each frequency band. For example, the filter FT filters the received signal RSIG to deliver the first received signal RSIG1 of the first frequency band BA to the first receiver RCV1, The second reception signal RSIG2 of the second receiver RCV2 may be transmitted to the second receiver RCV2. Each of the filters FT may include sub-filters for filtering to a frequency band responsible for the received signal RSIG.

The first receiver RCV1 may include a first input unit 810_1 and a first amplification unit 820_1. The first input unit 810_1 may perform impedance matching with respect to the first reception signal RSIG1 and supply the first reception signal RSIG1 to the first amplification unit 820_1 with the first RF input signal RFIN1. The first amplification unit 820_1 can receive and amplify the first RF input signal RFIN1. The first amplification unit 820_1 may include a first amplifier 820_1a and a first sub-amplifier 820_1b, and may be implemented as an LNA.

The second receiver RCV2 may be implemented with the same structure as the first receiver RCV1 and may include a second input unit 810_2 and a second amplification unit 820_2. The second input unit 810_2 may perform impedance matching with respect to the second reception signal RSIG2 and supply the second RF input signal RFIN2 to the second amplification unit 820_2. The second amplification unit 820_2 can receive and amplify the second RF input signal RFIN2. The second amplification unit 820_2 may include a second amplifier 820_2a and a second sub-amplifier 820_2b, and may be implemented as an LNA.

The first receiver RCV1 and the second receiver RCV2 may further include a first output unit 830_1 and a second output unit 830_2, respectively. The first output unit 830_1 down-converts the first RF output signal RFOUT11 transmitted from the first amplifier 820_1a to the baseband and outputs the first RF output signal RFOUT11 to the first baseband signal XBAS11. The first output unit 830_1 further down-converts the second RF output signal RFOUT22, which is transmitted from the second sub-amplifier 820_2b, to the base region and outputs the second RF output signal RFOUT22 to the second baseband signal XBAS22. Similarly, the second output unit 830_2 down-converts the second RF output signal RFOUT21, which is transmitted from the second amplifier 820_2a, into the baseband region, and outputs the resultant signal to the second baseband signal XBAS21. Further, the first RF output signal RFOUT12 transmitted from the first sub-amplifier 820_1b is down-converted to a baseband signal and output to the first baseband signal XBAS12.

Figs. 9A to 9C are diagrams showing examples in which the wireless terminals in Fig. 8 operate in the non-CA mode, the inter-band CA mode and the intra-band CA mode, respectively. However, the following description may be applied to wireless terminals other than the wireless terminal 800 of FIG. First, with reference to FIG. 9A, a case will be described in which the received signal RSIG includes only one carrier (the first carrier? 1) without applying the non-CA mode, that is, the carrier accumulation technique. In the non-CA mode, the mode signal XMOD may be applied as the first value VAL1. The filter FT may filter the received signal RSIG and supply it to the first receiver RCV1 assigned to the first carrier? 1 as the first received signal RSIG1.

The first input unit 810_1 of the first receiver RCV1 supplies a first RF input signal RFIN1 to the first amplification unit 820_1 by performing impedance matching with respect to the first reception signal RSIG1. The first amplifier 820_1a of the first amplifier 820_1 amplifies the first RF input signal RFIN1 and outputs the amplified first RF input signal RFOUT1 as a first RF output signal RFOUT11. The first output unit 830_1 down-converts the first RF output signal RFOUT11 to the baseband and outputs the first baseband signal XBAS11 corresponding to the first carrier 1. In this case, the first sub-amplifier 820_1b and the second receiver RCV2 of the first receiver RCV1 may be deactivated in response to the mode signal XMOD of the first value VAL1. In the non-CA mode, the second receiver RCV2 receives the second reception signal RSV1 applied to the second receiver RCV2 at a point different from the point of time when the first reception signal RSIG1 is applied to the first receiver RCV1, Signal RSIG2.

Next, referring to FIG. 9B, an operation in the case where the inter-band CA mode, that is, the reception signal RSIG in which the first carrier? 1 and the second carrier? 2 in different frequency bands are combined is input Explain. In the inter-band CA mode, the mode signal XMOD may be applied as the second value VAL2. The filter FT filters the received signal RSIG in each frequency band and supplies the first received signal RSIG1 of the first carrier? 1 of the first frequency band BA to the first receiver RCV1 And the second reception signal RSIG2 of the second carrier wave? 2 in the second frequency band to the second receiver RCV2.

The first input unit 810_1 of the first receiver RCV1 and the second input unit 810_2 of the second receiver RCV2 are connected to the first reception signal RSIG1 and the second reception signal RSIG2 by impedance matching And supplies the first RF input signal RFIN1 and the second RF input signal RFIN2 to the first amplifier 820_1a and the second amplifier 820_2a. The first amplifier 820_1a and the second amplifier 820_2a amplify the first RF input signal RFIN1 and the second RF input signal RFIN2 to generate a first RF output signal RFOUT11 and a second RF output signal RFOUT2, And outputs it as a signal RFOUT21. The first output unit 830_1 and the second output unit 830_2 respectively down-convert the first RF output signal RFOUT11 and the second RF output signal RFOUT21 into baseband, And the second baseband signal XBAS21 corresponding to the second carrier wave? 2. In this case, the first sub-amplifier 820_1b of the first receiver RCV1 and the second sub-amplifier 820_2b of the second receiver RCV2 are deactivated in response to the mode signal XMOD of the second value VAL2 .

Next, with reference to FIG. 9C, description will be given of an operation in the case where the first carrier? 1 and the second carrier? 2 in the intra-band CA mode, that is, the same frequency band are combined and the received signal RSIG is input do. In the intra-band CA mode, the mode signal XMOD may be applied as the third value VAL3. The filter FT filters the received signal RSIG modulated by the first carrier 1 and the second carrier 2 in the first frequency band BA to produce a first received signal RSIG1, (RCV1).

The first input unit 810_1 of the first receiver RCV1 supplies a first RF input signal RFIN1 to the first amplifier 820_1a which performs impedance matching with respect to the first reception signal RSIG1. The first input unit 810_1 may perform impedance matching on the first received signal RSIG1 with the same set value as the non-CA mode and the inter-band CA mode.

The first amplifier 820_1a amplifies the first RF input signal RFIN1 and transmits the amplified first RF input signal RFIN1 as the first RF output signal RFOUT11 to the first output unit 830_1. The first output unit 830_1 down-converts the first RF output signal RFOUT11 transmitted from the first amplifier 820_1a to the baseband and outputs the first baseband signal XBAS11 corresponding to the first carrier? . Then, the first internal signal XINT1 is transmitted from the first amplifier 820_1a to the first sub-amplifier 820_1b. The first sub amplifier 820_1b amplifies the first internal signal XINT1 and outputs the amplified first internal signal XINT1 to the second output unit 830_2 as a first RF output signal RFOUT1. The second output unit 830_2 down-converts the first RF output signal RFOUT11 transmitted from the first sub-amplifier 820_1b to the baseband and outputs a first baseband signal corresponding to the second carrier XBAS12. The second input unit 810_2 and the second amplification unit 820_2 of the second receiver RCV2 may be deactivated in response to the mode signal XMOD of the third value VAL3.

FIG. 10 is a diagram showing an example of the first amplifying unit and the second amplifying unit in FIG. 8; 10, the first amplifier 1020_1 may include a first amplifier 1020_1a and a first amplifier 1020_1b, and the second amplifier 1020_2 may include a second amplifier 1020_2a and a second amplifier 1020_2b. 2 sub amplifiers 1020_2b.

The first amplifier 1020_1a may include a first transistor CT1 and a second transistor CT2. The first transistor CT1 is connected between a first node (node NA1) and a second node ND2 and outputs a first RF input signal RFIN1 when the mode signal XMOD is applied to a logic high H, Is applied to the gate. The second transistor CT2 may be connected between the first node ND1 and the first output node NO1 and the mode signal XMOD may be applied to the gate. The source of the second transistor CT2 is connected to the drain of the first transistor CT1 at the first node ND1. The first RF output signal RFOUT11 amplified by the first RF input signal RFIN1 is output from the first output node NO1 to which the drain of the second transistor CT2 is connected.

The first transistor CT1 and the second transistor CT2 may each be implemented as a cascode transistor. That is, the first transistor CT1 and the second transistor CT2 are connected in series, the first transistor CT1 operates as a common source amplifier as an input terminal, the second transistor CT2 operates as a common source amplifier, Which operates as a common gate amplifier.

The node voltage of the first node ND1 is supplied to the first sub-amplifier 1020_1b. As described above, the first internal signal XINT1 may be the node voltage of the first node ND1. The first sub-amplifier 1020_1b may include a third transistor CT3 and a fourth transistor CT4. The third transistor CT3 may be connected between the third node ND3 and the fourth node ND4 and the first internal signal XINT1 may be applied as a gate. The fourth transistor CT4 is connected between the third node ND3 and the second output node NO2, and the mode signal XMOD may be applied as a gate. The source of the fourth transistor CT4 is connected to the drain of the third transistor CT3 at the third node ND3. The first RF output signal RFOUT12 amplified by the first internal signal XINT1 is output from the second output node NO2 to which the drain of the fourth transistor CT4 is connected.

The third transistor CT3 and the fourth transistor CT4 may each be implemented as a cascode transistor. That is, the third transistor CT3 and the fourth transistor CT4 are connected in series, the third transistor CT3 serves as a common source amplifier as an input terminal, the fourth transistor CT4 serves as an output terminal, And is implemented as a cascode amplifier.

Since the first sub amplifier 1020_1b is connected to the first node ND1 of the first amplifier 1020_1a, that is, the first RF input signal RFIN1 is applied to only one input terminal CT3 regardless of the mode, The impedance Zin1 viewed from the input terminal of the first amplifier 1020_1 is affected only by the first transistor CT1 (Zin1 = 1 / gm1 and gm1 is the transconductance of the first transistor CT1). Accordingly, the impedance Zin1 viewed from the input terminal of the first amplification unit 1020_1 can be constant regardless of the activation of the first sub-amplifier 1020_1b. As described above, the first sub-amplifier 1020_1b is activated only in the inter-band mode, and is not activated in the other modes. Thus, since the impedance Zin1 viewed from the input terminal of the first amplification unit 1020_1 is the same regardless of each mode, the loss required for impedance matching according to each mode can be reduced.

The first transistor CT1 may be larger than the second transistor CT2. Therefore, the absolute value of the voltage gain at the first node ND1 is one or more. The voltage gain Av at the first node ND1 is represented by -gm1 / gm2, and gm1 and gm2 represent the transfer conductances of the first transistor CT1 and the second transistor CT2, respectively. Therefore, the first internal signal XINT1 applied to the first sub amplifier 1020_1b is higher in voltage than the first RF input signal RFIN1 due to the voltage gain at the first node ND1. That is, the first sub-amplifier 1020_1b receives and amplifies the first internal signal XINT1 higher than the first RF input signal RFIN1 so that even if the DC current is consumed less, the first sub- And outputs the first RF output signal RFOUT12. Thus, power consumption can be reduced.

In addition, the noise characteristic can be improved by the voltage gain. The noise component in the first amplification part 1020_1 is a value obtained by dividing the noise component NS3 of the third transistor CT3 by the voltage gain Av by the noise component NS1 by the first transistor CT1 NS3 / Av) are summed (NS1 + NS3 / Av). Accordingly, as the voltage gain increases, the noise characteristic from the first amplification part 1020_1 to the second output node NO2 can be maintained in comparison with the noise characteristic on the signal path where the first RF output signal RFOUT11 is generated have.

The first transistor CT1 is provided greater than the second transistor CT2 to obtain a voltage gain at the first node ND1 between the first transistor CT1 and the second transistor CT2. The gate input impedance Zin3 of the third transistor CT3 is much larger than the source input impedance Zin2 of the second transistor CT2 so that the gate input impedance Zin2 of the third transistor CT3 The current leakage of the battery is not generated. Accordingly, the voltage gain of the signal path that generates the first RF output signal RFOUT11 is not lost.

That is, no current is leaked from the first node ND1 to the third transistor CT3. Therefore, a leakage current is not generated in the path for outputting the first RF output signal RFOUT11 to the first carrier (omega 1), so that the accurate first RF output signal RFOUT11 can be generated. The second amplifier 1020_2a may have the same structure as the first amplifier 1020_1a. The second amplifier 1020_2a may include a fifth transistor CT5 and a sixth transistor CT6. The fifth transistor CT5 is connected between the fifth node NA5 and the sixth node ND6 and when the mode signal XMOD is applied to the logic high H, Lt; / RTI > The sixth transistor CT6 is connected between the fifth node ND5 and the second output node NO2, and the mode signal XMOD may be applied as a gate. The source of the sixth transistor CT6 is connected to the drain of the fifth transistor CT5 at the fifth node ND5. The second RF output signal RFOUT21 amplified by the second RF input signal RFIN2 is output from the second output node NO2 to which the drain of the sixth transistor CT6 is connected.

The fifth transistor CT5 and the sixth transistor CT6 may be implemented as a cascode transistor, respectively. That is, the fifth transistor CT5 and the sixth transistor CT6 are connected in series, the fifth transistor CT5 serves as a common source amplifier as an input terminal, and the sixth transistor CT6 serves as an output terminal to a common gate amplifier Implemented as a cascode amplifier.

And the node voltage of the fifth node ND5 is supplied to the second sub-amplifier 1020_2b. The node voltage of the fifth node ND5 may be referred to as a second internal signal XINT2. The second sub-amplifier 1020_2b may have the same structure as that of the first sub-amplifier 1020_1b. The second sub-amplifier 1020_2b may include a seventh transistor CT7 and an eighth transistor CT8. The seventh transistor CT7 may be connected between the seventh node ND7 and the eighth node ND8 and the second internal signal XINT2 may be gated. The eighth transistor CT8 is connected between the seventh node ND7 and the first output node NO1, and the mode signal XMOD may be applied as a gate. The source of the eighth transistor CT8 is connected to the drain of the seventh transistor CT7 at the seventh node ND7. The second RF output signal RFOUT22 amplified by the second internal signal XINT2 is output from the first output node NO1 to which the drain of the eighth transistor CT8 is connected.

The seventh transistor CT7 and the eighth transistor CT8 may be implemented as cascode transistors, respectively. That is, the seventh transistor CT7 and the eighth transistor CT8 are connected in series, the seventh transistor CT7 serves as a common source amplifier as an input terminal, and the eighth transistor CT8 serves as a common gate amplifier Implemented as a cascode amplifier.

The impedance viewed from the input terminal of the second amplifier 1020_2 is constant for each mode and the fifth transistor CT5 of the second amplifier 1020_2a is connected to the sixth transistor CT6, The power consumption can be reduced or the noise characteristic can be improved. In addition, the first transistor CT1, the third transistor CT3, the fifth transistor CT5 and the seventh transistor CT7 are the same in size, and the second transistor CT2, the fourth transistor CT4, The size of the sixth transistor CT6 and the size of the eighth transistor CT8 may be the same.

The first amplifying unit 1520_1 and the second amplifying unit 1520_2 are connected to the first transistor CT1, the third transistor CT3, the fifth transistor CT5, and the fifth transistor CT5 for gate biasing of the input terminal. The first to fourth capacitors C1 to C4 may be further connected to the gates of the seventh to eighth transistors CT7.

Although the mode signals XMOD applied to the respective transistors CT1 through CT7 are shown in the same figure as in FIG. 10 and the following description, they can be applied to the transistors CT1 through CT7 at the same or different logic levels have.

Figs. 11A to 11C are diagrams showing examples in which the first amplifying unit and the second amplifying unit in Fig. 10 operate in the non-CA mode, the inter-band CA mode, and the intra-band CA mode, respectively. First, referring to FIG. 11A, in a non-CA mode, a first RF input signal RFIN1 including a first carrier (omega 1), to which a carrier integration technique is not applied, is applied to the first transistor CT1). In the non-CA mode, the mode signal XMOD applied to the first transistor CT1 and the second transistor CT2 is a logic high H, and the fourth transistor CT4, the fifth transistor CT5, The mode signal XMOD applied to the sixth transistor CT6 and the eighth transistor CT8 may be set to a logic low L. [ Therefore, only the first transistor CT1 and the second transistor CT2 are turned on, and the remaining transistors CT3 to CT8 are turned off. The first RF input signal RFIN1 is amplified by the first transistor CT1 and the second transistor CT2 and output to the first output node NO1 as the first RF output signal RFOUT11.

Next, referring to FIG. 11B, in the inter-band CA mode, a first RF input signal (1) including a first carrier (omega 1) of a first carrier (omega 1) and a second carrier (omega 2) RFIN1 is transmitted to the first transistor CT1 of the first amplifier 1020_1a and the second RF input signal RFIN2 including the second carrier wave ω2 is transmitted to the fifth transistor CT5 of the second amplifier 1020_2a, ). ≪ / RTI > In the first inter-band CA mode of the first receiver RCV1, a mode signal (a first signal) applied to the first transistor CT1, the second transistor CT2, the fifth transistor CT5 and the sixth transistor CT6 XMOD may be set to a logic high H and the mode signal XMOD applied to the fourth transistor CT4 and the eighth transistor CT8 may be set to a logic low L. [ Therefore, only the first transistor CT1, the second transistor CT2, the fifth transistor CT5 and the sixth transistor CT6 are turned on, and the remaining transistors CT3, CT4, CT7 and CT8 are turned- Off. The first RF input signal RFIN1 is amplified by the first transistor CT1 and the second transistor CT2 and output to the first output node NO1 as the first RF output signal RFOUT11. The second RF input signal RFIN2 is amplified by the fifth transistor CT5 and the sixth transistor CT6 and output to the second output node NO2 as the second RF output signal RFOUT21.

In the non-CA mode and the inter-band CA mode, the impedance Zin1 viewed from the input terminal of the first amplification part 1020_1 is the same as that of the first transistor CT1 and the fifth transistor CT5, It may be equal to the impedance Zin5 viewed from the input terminal of the second amplifier 1020_2 in the inter-band CA mode.

11C, in the intra-band CA mode, a first RF input signal RFIN1 including a first carrier wave? 1 and a second carrier wave? 2 in the same frequency band is applied to the first amplifier 1020_1a To the first transistor CT1. In the intra-band CA mode, the mode signal XMOD applied to the first transistor CT1, the second transistor CT2 and the fourth transistor CT4 is at a logic high H, the fifth transistor CT5, The mode signal XMOD applied to the sixth transistor CT6 and the eighth transistor CT8 may be set to a logic low L. [ The node voltage of the first node ND1 amplified by the voltage gain of the first RF input signal RFIN1 including the first carrier wave omega 1 and the second carrier wave omega 2 is set as a first internal signal XINT1 And is applied to the third transistor CT3. Accordingly, the first transistor CT1, the second transistor CT2, the third transistor CT3 and the fourth transistor CT4 are turned on and the remaining transistors CT5 to CT8 are turned off.

The first RF input signal RFIN1 is amplified by the first transistor CT1 and the second transistor CT2 and is output as a first RF output signal RFOUT11 to the first output node NO1, The third transistor XINT1 is amplified by the third transistor CT3 and the fourth transistor CT4 and output as a first RF output signal RFOUT12 to the second output node NO2. The first RF output signal RFOUT11 for the first RF input signal RFIN1 is an RF output signal for the first carrier omega 1 forming the first RF input signal RFIN1. The first RF output signal RFOUT12 for the first RF input signal RFIN1 is an RF output signal for the second carrier omega 2 forming the first RF input signal RFIN1.

In the intra-band CA mode, the impedance Zin1 viewed from the input terminal of the first amplifier 1020_1 is the same as that in the non-CA mode and the inter-band CA mode. As described above, the first transistor CT1 is formed to be larger than the second transistor CT2, so that a path (first path) for outputting the first RF output signal RFOUT11 to the first carrier (co1) The leakage current may not be generated in the power source. The path (second path) for outputting the first RF output signal RFOUT12 to the second carrier wave? 2 operates as an input (first internal signal XINT1) having a higher voltage level than the first path, Power consumption can be reduced and noise characteristics can be improved.

In the above description, the first receiver RCV1 operates in the non-CA mode and the intra-band CA mode. However, it is not limited thereto. The first carrier? 1 and the reception signal RSIG including the second carrier in the same frequency band and received by the antenna ATN in FIG. 8 are not transmitted through the filter FT to the first receiver RCV1 And the second received signal RSIG2 to the second receiver RCV2.

In this case, referring to FIG. 12 showing another example in which the first and second amplifying units in FIG. 10 operate in the intra-band CA mode, the second RF input signal RFIN2 is connected to the fifth transistor CT5 . The mode signal XMOD applied to the fifth transistor CT5, the sixth transistor CT6 and the eighth transistor CT8 is set to a logical high H and the first transistor CT1 and the second transistor CT2 And the mode signal XMOD applied to the fourth transistor CT4 may be set to a logic low (L). The node voltage of the fifth node ND5 amplified by the voltage gain of the second RF input signal RFIN2 including the first carrier wave 1 and the second carrier wave 2 is the second internal signal XINT2 And is applied to the seventh transistor CT7. Therefore, the fifth transistor CT5, the sixth transistor CT6, the seventh transistor CT7 and the eighth transistor CT8 are turned on and the remaining transistors CT1 through CT4 are turned off.

The second RF input signal RFIN2 is amplified by the fifth transistor CT5 and the sixth transistor CT6 and output as a second RF output signal RFOUT21 to the second output node NO2, The third transistor XINT2 is amplified by the seventh transistor CT7 and the eighth transistor CT8 and output to the first output node NO1 as the second RF output signal RFOUT22. The second RF output signal RFOUT21 for the second RF input signal RFIN2 is an RF output signal for the first carrier omega 1 forming the second RF input signal RFIN2. The second RF output signal RFOUT22 for the second RF input signal RFIN2 is an RF output signal for the second carrier omega 2 forming the second RF input signal RFIN2.

13 to 17 are diagrams showing another example of the first amplifying unit and the second amplifying unit in Fig. 8, respectively. 13, the first amplifier 1320_1 may include a first amplifier 1320_1a and a first amplifier 1320_1b. The second amplifier 1320_2 may include a second amplifier 1320_2a and a second amplifier 1320_2b. 2 sub amplifiers 1320_2b. The first amplifying unit 1320_1 and the second amplifying unit 1320_2 may include the first transistor CT1 through the eighth transistor CT8 as in the case of FIG. The first amplifying unit 1520_1 and the second amplifying unit 1520_2 may include a first transistor CT1, a third transistor CT3, a fifth transistor CT5, and a seventh transistor CT5 for gate biasing an input terminal. (C1) to a fourth capacitor (C4) connected to the gates of the first and second capacitors CT7 and CT7, respectively.

Furthermore, the first amplifying unit 1320_1 and the second amplifying unit 1320_2 may further include a first inductor L1 and a second inductor L2, respectively. The first inductor L1 and the second inductor L2 may be connected between the source and the ground terminal of the first transistor CT1 and the fifth transistor CT5 respectively as a source degeneration inductor . The first inductor L1 enables the impedance matching to improve the noise characteristic of the first amplifier 1320_1a and further improves the linearity of the amplifying operation of the first amplifier 1320_1a in the first inductor L1. . Similarly, the second inductor L2 can reduce the interaction between the second amplifier 1320_2a and the second sub-amplifier 1320_2b, prevent degradation of the noise characteristic, and perform the amplification operation of the second amplifier 1320_2a Can be improved. The first inductor L1 and the second inductor L2 may be the same or different from each other. For example, if the interaction between the first amplifier 1320_1a and the first sub-amplifier 1320_1b is the same as the interaction between the second amplifier 1320_2a and the second sub-amplifier 1320_2b, the first inductor L1 and the second inductor L2 may have the same value.

Referring to FIG. 14, the first amplifier 1420_1 may include a first amplifier 1420_1a and a first amplifier 1420_1b, and the second amplifier 1420_2 may include a second amplifier 1420_2a and a second amplifier 1420_2b. 2 sub amplifiers 1420_2b. The first amplifying part 1420_1 and the second amplifying part 1420_2 may include a first transistor CT1 and a fifth transistor CT5 as in the first amplifying part 1020_1 and the second amplifying part 1020_2 in FIG. The first inductor L1 and the second inductor L2 may be disposed between the ground terminal and the ground terminal. The first amplifying unit 1520_1 and the second amplifying unit 1520_2 may include a first transistor CT1, a third transistor CT3, a fifth transistor CT5, and a seventh transistor CT5 for gate biasing an input terminal. (C1) to a fourth capacitor (C4) connected to the gates of the first and second capacitors CT7 and CT7, respectively.

Furthermore, the first amplifying part 1420_1 may further include a first resistor R1 together with the first inductor L1. The first inductor L1 is connected between the first transistor CT1 of the first amplifier 1420_1a and the ground voltage and the first resistor R1 is connected between the third transistor CT3 of the first sub- Can be connected between ground terminals. The second inductor L2 is connected between the fifth transistor CT5 of the second amplifier 1420_2a and the ground voltage and the second resistor R2 is connected between the seventh transistor CT7 of the second sub amplifier 1420_2b and the seventh transistor CT7 of the second sub- Can be connected between ground terminals. Formulation 1 The gain of the first amplification part 1420_1 and the second amplification part 1420_2 can be controlled by the resistor R1 and the second resistor R2. However, the present invention is not limited thereto. The first sub amplifier 1420_1b and the second sub amplifier 1420_2b according to the embodiment are respectively connected to the fifth transistor CT5 and the seventh transistor CT2 in place of the first resistor R1 and the second resistor R2, An inductor may be included between the ground terminal CT7 and the ground terminal.

15, the first amplifier 1520_1 may include a first amplifier 1520_1a and a first amplifier 1520_1b. The second amplifier 1520_2 may include a second amplifier 1520_2a and a second amplifier 1520_2b. 2 sub amplifiers 1520_2b. The first amplifying unit 1520_1 and the second amplifying unit 1520_2 may include first to sixth transistors CT1 to CT8 as in the first and second amplifying units 1020_1 and 1020_2 of FIG. . ≪ / RTI > The first amplifying unit 1520_1 and the second amplifying unit 1520_2 may include a first transistor CT1, a third transistor CT3, a fifth transistor CT5, and a seventh transistor CT5 for gate biasing an input terminal. (C1) to a fourth capacitor (C4) connected to the gates of the first and second capacitors CT7 and CT7, respectively. In addition, the first amplifying part 1520_1 and the second amplifying part 1520_2 may include inductors L1 to L4 between the ground terminals of the first transistor CT1 to the eighth transistor CT8, respectively .

16, the first amplifier 1620_1 may include a first amplifier 1620_1a and a first amplifier 1620_1b, and the second amplifier 1620_2 may include a second amplifier 1620_2a and a second amplifier 1620_2b. 2 sub amplifiers 1620_2b. The first amplifying unit 1620_1 and the second amplifying unit 1620_2 may include first to sixth transistors CT1 to CT8 as in the first and second amplifying units 1420_1 and 1420_2 of FIG. And inductors L1 and L2 or resistors R1 and R2, respectively, between the ground terminal and the ground terminal. Further, the first amplifying part 1620_1 includes a third resistor R3 and a fifth capacitor C5 connected in series between the first node ND1 and the second output node NO2, The unit 1620_2 may further include a fourth resistor R4 and a sixth capacitor C6 that are connected in series between the second node ND2 and the first output node NO1. The paths (feedback circuits) from the respective output nodes NO1 and NO2 in FIG. 16 to the internal nodes N1 and N5 are the same as those of the first resistor R1 and the second resistor R2, NO2) to control the gain of the first amplifying unit 1620_1 and the second amplifying unit 1620_2.

17 is a diagram illustrating a first receiver according to another embodiment. Referring to FIG. 17, the first receiver RCV1 may include a first input unit 1710_1, a first amplification unit 1720_1, and a first output unit 1730_1. The first input unit 1710_1 receives the first reception signal RSIG1. In the intra-band CA mode, the first received signal RSIG1 may include a first carrier? 1 and a second carrier? 2 in the same frequency band. The first input unit 1710_1 performs impedance matching with respect to the first reception signal RSIG1 and transmits the first RF input signal RFIN1 to the first amplification unit 1720_1.

The first amplifier 1720_1 includes a first amplifier 1720_1a and a first sub-amplifier 1720_1b. The first amplifier 1720_1a may include a first transistor CT1, a second transistor CT2, and a first inductor L1. The first sub-amplifier 1720_1b may include a third transistor CT3, a fourth transistor CT4, and a first resistor R1. The operations of the first to fourth transistors CT1 to CT4, the first inductor L1 and the first resistor R1 are the same as those described above, and a detailed description thereof will be omitted. However, the source of the second transistor CT2 is connected to the ninth node ND9, not to the first node ND1. A ninth transistor CT9 connected between the first node ND1 and the ninth node ND9 and a tenth transistor CT10 having a source connected to the ninth node ND9 are further included . Although FIG. 17 shows an example in which the ninth transistor CT9 and the tenth transistor CT10 are included together, the present invention is not limited thereto.

When the first carrier 1 and the second carrier 2 are transmitted from different base stations and when the first carrier 1 and the second carrier 2 amplify the integrated first reception signal RSIG1, Gain control for the first amplifying unit 1720_1 may be required. For example, if the first carrier? 1 is a signal received from a base station located close to a wireless terminal including the first receiver RCV1, the first RF output signal RFOUT11 for the first carrier? The gain, or size, may have to be reduced.

In this case, the gain control signal XCON is applied to the logic high H and the tenth transistor CT10 can be turned on. Thus, the current i11 supplied from the first output node NO1 to the first output portion 1730_1 is reduced, and the gain can be controlled. However, when processing a high-frequency RF input signal, the voltage gain at the ninth node ND9 can be changed due to the influence of the parasitic capacitance between the source and the drain of the second transistor CT2. However, since the ninth transistor CT9 is located between the first node ND1 and the ninth node ND9 and functions as a buffer, the voltage gain at the first node ND1 is maintained constant . That is, even if the gain of the first current path to the first output node NO1 through the first amplifier 1720_1a is controlled, the voltage gain of the first node ND1 is maintained to affect the first sub-amplifier 1720_1b It may not be crazy. Therefore, the second current i12 supplied to the second output node NO2 can be kept constant. The operation of the first sub-amplifier 1720_1b may be as described above, and a detailed description thereof will be omitted.

The first output unit 1730_1 may include a first converter X1, a first capacitor bank CB1, a first mixer MIX1, and a first baseband filter FT1. The first converter X1 generates a different signal from the first RF output signal RFOUT11 applied at the first output node NO1 and each output is coupled to the RF frequency First carrier) to block the other signal. The first mixer MIX1 is connected to the first converter X1 and down-converts the signal transmitted from the first converter X1. The first baseband filter FT1 filters the down-converted signal with the first baseband signal XBAS11. The second output unit 1730_2 that may be included in the second receiver RCV2 may be implemented with the same structure as the first output unit 1730_1 of the first receiver RCV1. For example, the second output portion 1730_2 may include a second converter X2, a second capacitor bank CB2, a first mixer MIX2, and a second baseband filter FT2, The first RF output signal RFOUT12 supplied from the first baseband signal NO2 can be output as the first baseband signal XBAS12.

The first amplifier 1720_1 may further include a first capacitor C1 and a second capacitor C2 for performing gate biasing for the first transistor CT1 and the third transistor CT3, have.

18 and 19 are diagrams illustrating a wireless terminal according to another embodiment, respectively. 18, the wireless terminal 1800 includes a filter FT, input units 1810_1 to 1810_N, and an input unit 1810 to process a received signal RSIG input to the wireless terminal 1800 through an antenna (ATN) LNA 1820 and outputs 1830_1 through 1830_N. FIG. 19 illustrates a configuration required for processing the reception signal RSIG among the plurality of configurations included in the wireless terminal 1800. FIG.

The filter FT filters the received signal RSIG input through the antenna ATN to a corresponding frequency band. For example, the filter FT may transmit a signal of the first frequency band BA of the received signal RSIG as a first reception signal RSIG1 to the first input unit 1810_1, To the second input unit 1810_2 as the second received signal RSIG2. Similarly, the filter FT may transmit a signal of the N-th frequency band (not shown) of the received signal RSIG to the N-th input unit 1810_N as the N-th received signal RSIGN. N is an integer of 3 or more. The filter FT may be implemented as a duplexer.

Each of the input units 1810_1 to 1810_N performs RF matching such as impedance matching between the received signals RSIG1 to RSIGN applied from the filter FT and the LNA 1820 and transmits them to the LNA 1820. [ For example, the first input unit 1810_1 processes the first received signal RSIG1 and transmits it to the LNA 1820 with a first RF input signal RFIN1, and the second input unit 1810_2 transmits a second received signal RSIG2 and transmit it to the LNA 1820. [ Similarly, the Nth input unit 1810_N may process the Nth received signal RSIGN and transmit it to the LNA 1820 with the Nth RF input signal RFINN.

The LNA 1820 amplifies the RF input signals RFIN1 to RFINN to RF output signals RFOUT11 to RFOUT (N-1) 2. For example, the LNA 1820 amplifies the first RF input signal RFIN1 to the first RF output signals RFOUT11 and RFOUT12 in the intra-band CA mode, and amplifies the second RF input signal RFIN2 2 RF output signals (RFOUT21, RFOUT22). Similarly, in the intra-band CA mode, the LNA 1820 can amplify the Nth RF input signal RFINN to the Nth RF output signals. The LNA 1820 may include a plurality of amplification units (not shown) for processing. For example, the LNA 1820 includes a first amplification unit 820_1 and a second amplification unit 820_2 for processing the first RF input signal RFIN1 and the second RF input signal RFIN2, can do. The LNA 1820 is implemented with the same structure as the first amplification unit 820_1 or the second amplification unit 820_2 of FIG. 8, which processes another RF input signal (for example, the Nth RF input signal RFINN) (Not shown) for amplifying the amplified signal. The wireless terminal 1800 according to the embodiment includes the LNA 1820 including the amplifying units performing the same function as the first amplifying unit 820_1 or the second amplifying unit 820_2, It is possible to perform impedance matching with a single value, thereby improving the operation efficiency.

The output units 1830_1 to 1830_N downconvert RF output signals RFOUT11 to RFOUT (N-1) 2 transmitted from the LNA 1820 to generate baseband signals XBAS11 to XBAS (N-1) . For example, in the intra-band CA mode, the first baseband signal XBAS11 corresponding to the first carrier (omega 1) of the first RF output signals RFOUT11 and RFOUT12, as described in Fig. 9C, 1 output unit 1830_1 and the first baseband signal XBAS12 corresponding to the second carrier wave omega 2 can be down-converted by the second output unit 1830_2. Alternatively, the second baseband signal XBAS21 corresponding to the first one of the second RF output signals RFOUT21 and RFOUT22 in the intra-band CA mode may be down-converted by the second output unit 1830_2, And the second baseband signal XBAS22 corresponding to the second carrier wave omega 2 can be down-converted by the first output unit 1830_1.

As such, the first output unit 1830_1 and the second output unit 1830_2 can operate in pairs. However, the present invention is not limited thereto. For example, the first baseband signal XBAS11 corresponding to the first carrier? 1 of the first RF output signals RFOUT11 and RFOUT12 is down-converted by the first output unit 1830_1, The first baseband signal XBAS12 corresponding to the carrier wave omega 2 may be down-converted by an output other than the second output 1830_2. Similarly, in the intra-band CA mode, the N-th output unit 1830_N may output the N-th RF output signal RFOUTN1 corresponding to the first carrier (omega 1) or the N-1th RF output And can down-convert the signal RFOUT (N-1) 2.

19, the wireless terminal 1900 of FIG. 19 includes a filter FT to process a received signal RSIG input to the wireless terminal 1900 via an antenna (ATN) Input units 1910_1 to 1910_M, an LNA 1920, and output units 1930_1 to 1930_M. However, the wireless terminal 1900 of FIG. 19 can process the received signal RISG on which M carriers are integrated. For example, when M carriers are included in the first frequency band BA, the first RF input signal RFIN1 processed by the first input unit 1910_1, which is responsible for the first frequency band BA, And amplified by M amplifiers of the first RF output signal RFOUT11 through RFOUT1M. The output units 1930_1 to 1930_M respectively frequency downconvert the first RF output signals RFOUT11 to RFOUT1M to output M baseband signals XBAS11 to XBAS1M for the corresponding carriers of the M carriers. Processing for M carriers in different frequency bands can be performed in the same manner. For the sake of understanding, an example in which M is 3 will be described in more detail below.

20 is a diagram illustrating a first receiver according to another embodiment. 20, a first receiver RCV1 according to an embodiment includes a first amplifier 2020, a first amplifier 2020 includes a first amplifier 2020a, A first sub-amplifier 2020b and a first sub-amplifier 2020c. The first amplifier 2020a receives and amplifies the first RF input signal RFIN1 modulated by at least three carriers of the same frequency band in the intra-band CA mode, 1 RF output signal (RFOUT11). 20, an example in which the first RF input signal RFIN1 is modulated by the three carriers of the first carrier? 1, the second carrier? 2 and the third carrier? 3 is shown. The first 1-1 sub amplifier 2020b amplifies the first internal signal XINT1 applied from the first amplifier 2020a and outputs the first internal signal XINT1 as a first RF output signal RFOUT12 corresponding to the second carrier can do. Similarly, the first-second sub amplifier 2020c amplifies the first internal signal XINT1 applied from the first amplifier 2020a and outputs the first RF output signal RFOUT13 corresponding to the third carrier? .

20 receives and amplifies the first RF input signal RFIN1 modulated by at least three or more carriers of the same frequency band in the intra-band CA mode, the first receiver RCV1 of FIG. The first and second sub amplifiers 2020a and 2020b amplify the first internal signal XINT1 of the first amplifier 2020a and amplify the first internal signal XINT1 of the first amplifier 2020a to generate the first The non-CA mode and the inter-band CA mode in which the first-first sub-amplifier 2020b and the first-second sub-amplifier 2020c are inactivated by generating the RF output signals RFOUT12 and RFOUT13, In the intra-band CA mode in which one sub-amplifier 2020b and the first-second sub-amplifier 2020c are activated, the input impedances of the first amplifier 2020 may all be the same.

21 is a diagram illustrating an LNA (Low Noise Amplifier) according to an embodiment. Referring to FIG. 21, the LNA includes a first amplifier 2010_1 for amplifying a first RF input signal RFIN1, a second amplifier 2120_2 for amplifying a second RF input signal RFIN2, And a third amplifying part 2120_3 for amplifying the third RF input signal RFIN3. The first RF input signal RFIN1 is the signal of the first frequency band BA and the second RF input signal RFIN2 is the signal of the second frequency band BB and the third RF input signal RFIN3 is the signal of the second frequency band BB. 3 frequency band (not shown).

The first amplifier 2120_1 may include a first amplifier 2120_1a, a first sub-amplifier 2120_1b, and a first sub-amplifier 2120_1c.

The first amplifier 2120_1a amplifies the first RF input signal RFIN1 modulated with the first carrier? 1 of the first frequency band BA in the non-CA mode and the inter-band CA mode, It is possible to output the first RF output signal RFOUT11 corresponding to the first carrier? 1 through the first output node NO1. The first amplifier 2120_1a is connected to the first amplifier 2120_1a in the first-frequency band BA in the intra-band CA mode, in which the first carrier? 1, the second carrier? 2 and the third carrier? It is possible to amplify the RF input signal RFIN1 and output the first RF output signal RFOUT11 corresponding to the first carrier? 1 of the first frequency band BA through the first output node NO1 . The first amplifier 2120_1a may include transistors CT11 and CT12 for this purpose, and the transistors CT11 and CT12 may operate in the same manner as the first transistor CT1 and the second transistor CT2 in FIG. That is, the transistors CT11 and CT12 function together as a cascode amplifier, and the transistor CT12 can be implemented larger than the transistor CT11. Also, when the mode signal XMOD is applied to the logic high H, the first RF input signal RFIN1 is applied to the gate of the transistor CT11, and the mode signal XMOD is applied to the gate of the transistor CT12.

The first 1-1 sub amplifier 2120_1b is deactivated in the non-CA mode and the inter-band CA mode and in the intra-band CA mode, the first internal signal XINT1, which is the node voltage of the node ND11 of the first amplifier 2010_1a, And output the first RF output signal RFOUT12 for the second carrier? 2 of the first frequency band BA through the second output node NO2. The first 1-1 sub-amplifier 2120_1b may include transistors CT13 and CT14 for this purpose, and the transistors CT13 and CT14 may be the same as the third transistor CT3 and the fourth transistor CT4 of FIG. 10. The transistors CT13 and CT14 function together as a cascode amplifier, the first internal signal XINT1 is applied to the gate of the transistor CT13, and the mode signal XMOD is applied to the gate of the transistor CT14.

The first 1-2 sub amplifier 2120_1c is deactivated in the non-CA mode and the inter-band CA mode and in the intra-band CA mode, the first internal signal XINT1, which is the node voltage of the node ND11 of the first amplifier 2120_1a, And output the first RF output signal RFOUT13 for the third carrier? 3 of the first frequency band BA through the third output node NO3. The first-second sub-amplifier 2120_1c may include transistors CT15 and CT16 for this purpose, and the transistors CT13 and CT14 may operate in the same manner as the third transistor CT3 and the fourth transistor CT4 in FIG. 10 . The transistors CT15 and CT16 function together as a cascode amplifier, the first internal signal XINT1 is applied to the gate of the transistor CT15, and the mode signal XMOD is applied to the gate of the transistor CT16. However, one end of the transistor CT16 may be connected to the third output node NO3.

The second amplification unit 2120_2 and the third amplification unit 2120_3 may be implemented similarly to the first amplification unit 2120_1. That is, the second amplifying unit 2120_2 may include a second amplifier 2120_2a, a second-1 sub-amplifier 2120_2b, and a second-second sub-amplifier 2120_2c, and the third amplifying unit 2120_3 may include The third amplifier 2120_3a, the third amplifier 2120_3b, and the third amplifier 2220_3c. The 2-1 sub amplifier 2120_2b and the 2-2 sub amplifier 2120_2c and the 3-1 sub amplifier 2120_3b and the 3-2 sub amplifier 2120_3c are connected to the non- It can be deactivated in band CA mode.

The second amplifier 2120_2a receives the second carrier? 2 of the second frequency band BB through the second output node NO2 in the non-CA mode, the inter-band CA mode and the intra- The second RF output signal RFOUT22 corresponding to the second RF output signal RFOUT22. The second amplifier 2120_2a may include transistors CT21 and CT22. In the intra-band CA mode, the 2-1 sub amplifier 2120_2b and the 2-2 sub amplifier 2120_2c output the second internal signal XINT2, which is the node voltage of the node ND21 of the second amplifier 2120_2a, Amplify. The 2-1 sub amplifier 2120_2b amplifies the amplified second internal signal XINT2 through the first output node NO1 and outputs the second internal signal XINT2 to the second output terminal IN2 of the first carrier? 1 included in the second frequency band BB, And outputs the RF output signal RFOUT21. The 2-2 sub amplifier 2120_2c amplifies the amplified second internal signal XINT2 through the third output node NO3 and the second internal signal XINT2 for the second carrier frequency omega 3 included in the second frequency band BB, And outputs it to the RF output signal RFOUT23.

The third amplifier 2120_3a is connected to the third carrier wave? 3 (not shown) of the third frequency band (not shown) through the third output node NO2 in the non-CA mode, the inter-band CA mode and the intra- The third RF output signal RFOUT33 corresponding to the second RF output signal RFOUT33. The third amplifier 2120_3a may include transistors CT31 and CT32. In the intra-band CA mode, the 3-1 sub amplifier 2120_3b and the 3-2 sub amplifier 2120_3c respectively output the third internal signal XINT3, which is the node voltage of the node ND31 of the third amplifier 2120_3a, Amplify. The 3-1 sub amplifier 2120_3b amplifies the amplified third internal signal XINT3 through the first output node NO1 and outputs the amplified third internal signal XINT2 to the first carrier? 3 RF output signal (RFOUT31). The 3-2 sub-amplifier 2120_3c amplifies the amplified third internal signal XINT3 through the second output node NO2 and outputs the amplified third internal signal XINT2 to the second carrier (? 2) included in the third frequency band (not shown) 3 RF output signal (RFOUT32).

Capacitors for gate biasing are connected to the gates of the transistors CT11, CT13, CT15, CT21, CT23, CT25, CT31, CT33 and CT35, respectively. 21, a mode signal XMOD may be applied to the gates of the transistors CT11, CT13, CT15, CT21, CT23, CT25, CT31, CT33 and CT35 as in FIG.

According to the method of operating the receiver, the wireless terminal, and the wireless terminal according to an exemplary embodiment, when the multi-carriers are included in different frequency bands, the RF output signals including the RF input signals, And when the multi-carriers are included in the same frequency band, the RF output signal for one carrier is outputted through the amplifier receiving the RF input signal including the corresponding carrier, while the RF output signal for the other carrier is The input impedance of the receiver can be the same regardless of whether the multicarrier waves are included in different frequency bands or included in the same frequency band by outputting the signals through the sub amplifiers for processing signals applied from the amplifiers. Thus, it is possible to prevent a loss that may be caused by varying the impedance matching according to each operation mode. Thus, by not lowering the noise characteristic or the gain characteristic, the power consumption of the wireless terminal including the receiver or the receiver can be reduced, and the received signal can be processed correctly. According to the operation method of the receiver, the wireless terminal, and the wireless terminal according to the embodiment, the signal amplified by the voltage gain of one amplifier is transmitted to another amplifier, and the RF carrier signal modulated by the multi- The power consumption can be reduced, and the noise characteristic or the gain characteristic can be maintained. Therefore, the signal reception sensitivity in the wireless terminal can be improved, and the reliability of the wireless terminal can be improved. Therefore, according to the operation method of the receiver, the wireless terminal, and the wireless terminal according to the embodiment, it is possible to process the received signal efficiently.

22 is a diagram illustrating a computing system according to an embodiment of the present invention. 22, a system-on-a-chip 2210, a memory device 2220, an input / output device 2230 in a computing system 2200 such as a mobile device, a desktop computer, or a server, And a display device 2240, which may be electrically connected to the bus 2250, respectively. The input / output device 2230 of FIG. 22 may include the first receiver RCV1 of FIG. 1 described above.

23 is a diagram illustrating a wireless terminal in accordance with one embodiment. 23, the wireless terminal 2300 includes an application processor 2310, a communication processor 2320, a camera 2330, a display 2340, a communication RF (Radio Frequency) Memories 2360 and 2370, respectively. An application may be executed by the application processor 2310 in the wireless terminal 2300. [ For example, when an image is photographed through the camera 2330, the application processor 2310 may store the photographed image in the second memory 2370 and display it on the display 2340. The photographed image can be transmitted to the outside through the communication RF 2350 under the control of the communication processor 2320. At this time, the communication processor 2320 may temporarily store the image in the first memory 2360 to transmit the image. The communication processor 2320 can also control communication for communication and data transmission / reception. Communication RF 2350 may include the first receiver (RCV1) of FIG. 1 described above.

As described above, the optimal embodiment is disclosed in the drawings and specification. It is to be understood that the terminology set forth herein is for illustrative purposes only and is not intended to limit the scope of the present invention. For example, although the wireless network is described as LTE-A in the above description, the present invention is not limited to the LTE-A. The receiver and the wireless terminal according to an exemplary embodiment may operate with respect to the network. Therefore, those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. The scope of the true technical protection according to each embodiment should be determined by the technical idea of the appended claims.

RCV1: first receiver
12:
12a: first amplifier
12b: first sub amplifier
RFIN: first RF input signal
XINT1: first internal signal
RFOUT11: the first RF output signal for the first carrier
RFOUT12: the first RF output signal for the second carrier
? 1: first carrier
? 2: second carrier

Claims (20)

A first amplifier receiving and amplifying a first RF input signal and outputting the RF output signal corresponding to a first carrier included in the first frequency band; And
A first amplifier for receiving and amplifying a first internal signal from the first amplifier and outputting an RF output signal corresponding to a second carrier included in the first frequency band when the mode signal indicates the first mode; 1 A receiver comprising a sub amplifier. The method according to claim 1,
In the first mode,
Wherein the first RF input signal is an Intra-Band Carrier Aggregation mode in which the first carrier and the second carrier included in the first frequency band are integrated. The method according to claim 1,
Wherein the first internal signal comprises:
Wherein the first RF input signal is a signal amplified with a first gain. The method according to claim 1,
Wherein the first amplifier and the first sub-amplifier are included in a first amplifier,
Wherein an input impedance of the first amplifying unit is expressed by:
The first mode, and the second mode different from the first mode. The method according to claim 1,
Wherein the first amplifier comprises:
A first transistor connected between a first node and a second node, the first RF input signal being applied to a gate; And
A source connected to a drain of the first transistor at a first node, a drain connected to a first output node, and a source coupled to a drain of the second transistor, Transistors,
Wherein the first sub-
A third transistor coupled between the third node and the fourth node, the third internal signal being applied to the gate from the first node; And
A fourth transistor having a source connected to the drain of the third transistor at the third node, a drain connected to the second output node, and a mode signal applied to the gate. 5. The method of claim 4,
Wherein the first amplifier comprises:
Further comprising a source degeneration inductor coupled between the second node and a ground terminal,
Wherein the first sub-
And a serial feedback resistor coupled between the fourth node and the ground terminal. 5. The method of claim 4,
Wherein the first amplifier comprises:
A cascode amplifier including the first transistor and the second transistor,
Wherein the first sub-
The third transistor, and the fourth transistor. The method according to claim 1,
The receiver includes:
A first output circuit for down-converting an RF output signal amplified by the first amplifier to a baseband corresponding to the first carrier and outputting the downconverted signal; And
And a second output circuit for downconverting and outputting an RF output signal amplified by the first sub-amplifier to a base band corresponding to the second carrier. The method according to claim 1,
A second amplifier receiving and amplifying the second RF input signal and outputting the RF output signal corresponding to the third carrier included in the second frequency band; And
And a second sub amplifier for receiving and amplifying a second internal signal from the second amplifier in the first mode and outputting it as an RF output signal corresponding to a fourth carrier included in the second frequency band, . 10. The method of claim 9,
The receiver includes:
A first output unit for down-converting a selected one of the RF output signals amplified by the first amplifier and the second sub-amplifier to a baseband and outputting the selected signal; And
Further comprising a second output unit for down-converting the selected one of the RF output signals amplified by the second amplifier and the first sub-amplifier to a baseband and outputting the selected signal. A first input unit for performing impedance matching on a first reception signal filtered by the reception signal in the first frequency band and outputting the impedance to a first RF input signal;
The first RF input signal received through one first input terminal is amplified in both the inter-band CA mode and the intra-band CA mode, A first amplifying unit outputting at least one first RF output signal; And
And a first output for down-converting at least one of the at least one first RF output signal to a baseband. 12. The method of claim 11,
The wireless terminal,
A second input unit for performing impedance matching on the second reception signal filtered by the reception signal in the second frequency band and outputting the second reception signal as a second RF input signal;
A second amplifying unit amplifying the second RF input signal received through one second input terminal and outputting at least one second RF output signal in both the inter-band CA mode and the intra-band CA mode; And
And a second output for down-converting at least one of the at least one second RF output signal to a baseband. 13. The method of claim 12,
In the inter-band CA mode in which the received signal is modulated by a first carrier of the first frequency band and a second carrier of the second frequency band,
Wherein the first amplifying unit comprises:
Amplifying the first RF input signal with the first RF output signal corresponding to the first carrier,
Wherein the second amplifying unit comprises:
And amplifies the second RF input signal with the second RF output signal corresponding to the second carrier. 13. The method of claim 12,
In the intra-band CA mode in which the received signal is modulated by a first carrier and a second carrier in the first frequency band,
Wherein the at least one first RF output signal is generated in two,
Wherein the first amplifying unit comprises:
Outputting a first RF input signal received at the first input terminal to one of the two first RF output signals corresponding to the first carrier,
Wherein the first RF input signal is amplified to a first gain and the first internal signal is output to the other of the two first RF output signals corresponding to the second carrier. 15. The method of claim 14,
Wherein the first amplifying unit comprises:
A first amplifier, and a first sub-amplifier activated in the intra-band CA mode,
Wherein the first amplifier comprises:
A first transistor connected between a first node and a second node, the first RF input signal being applied to a gate; And
A source coupled to a drain of the first transistor at the first node and coupled to a first output node for coupling one of the two first RF output signals to a first RF output signal corresponding to the first carrier, And a second transistor for outputting an output signal,
Wherein the first sub-
A third transistor coupled between a third node and a fourth node, the third transistor being applied to the first internal signal from the first node; And
A drain connected to the drain of the third transistor at the third node and a drain connected to the second output node, and the other of the two first RF output signals is connected to the first RF output signal corresponding to the first RF And outputting the output signal as an output signal. 16. The method of claim 15,
Wherein the first transistor is larger than the second transistor. 16. The method of claim 15,
The first RF output signal corresponding to the first carrier wave and the first RF output signal corresponding to the second carrier wave have the same magnitude,
The DC current required to output the first RF output signal corresponding to the second carrier in the first sub-
Wherein the first amplifier is less than the DC current required to output the first RF output signal corresponding to the second carrier in the first amplifier. 16. The method of claim 15,
One of the at least one first RF output signal output from the second transistor is down-converted by the first output,
Wherein the other of the at least one first RF output signal output from the fourth transistor is down-converted by the second output. 15. The method of claim 14,
Wherein the first amplifier comprises:
A first transistor coupled between a first node and a second node, the first RF input signal being applied to a gate; And
The source is connected to the ninth node and the drain is connected to the first output node to output one of the two first RF output signals to the first output node as a first RF output signal corresponding to the first carrier, A second transistor connected to the first transistor;
A ninth transistor coupled between the first node and the ninth node; And
Wherein a gain control signal for controlling a gain of a first RF output signal output from the first output node is applied to the gate and a source is connected to the ninth node. 13. The method of claim 12,
In the intra-band CA mode in which the received signal is modulated by the first carrier and the second carrier of the second frequency band,
Wherein the at least one first RF output signal is generated in two,
Wherein the second amplifying unit comprises:
And outputting a second RF input signal received at the second input terminal to one of the two RF output signals corresponding to the first carrier,
Wherein the second RF input signal is amplified to a first gain and the second internal signal is output to the other of the two second RF output signals corresponding to the second carrier.

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