KR20160082792A - Heater manufacturing method for semiconductor manufacturing apparatus and heater thereof - Google Patents
Heater manufacturing method for semiconductor manufacturing apparatus and heater thereof Download PDFInfo
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- KR20160082792A KR20160082792A KR1020140192135A KR20140192135A KR20160082792A KR 20160082792 A KR20160082792 A KR 20160082792A KR 1020140192135 A KR1020140192135 A KR 1020140192135A KR 20140192135 A KR20140192135 A KR 20140192135A KR 20160082792 A KR20160082792 A KR 20160082792A
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- Prior art keywords
- heater
- film
- photosensitive film
- pattern
- blasting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000005422 blasting Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 22
- 238000004049 embossing Methods 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 230000000873 masking effect Effects 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910001026 inconel Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004576 sand Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- -1 Inconell Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000010408 film Substances 0.000 description 57
- 230000008569 process Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
The present invention is an improvement on the prior art 10-2012-0134908 of the present applicant.
The present invention relates to a method of manufacturing a heater for a semiconductor manufacturing apparatus and a heater manufactured thereby.
The present invention can be applied not only to the manufacture of a heater for a semiconductor manufacturing apparatus but also to a method for repairing a damaged heater which has already been used in a semiconductor manufacturing process.
INDUSTRIAL APPLICABILITY The present invention is applicable to a semiconductor manufacturing apparatus and its related apparatus and its parts.
In general, wafers are formed by cutting a columnar ingot into which a single crystal of a semiconductor material is grown, which is made of a semiconductor material, to make an integrated circuit. The wafer is subjected to various surface processes such as deposition and etching.
In general, a process for depositing or etching a thin film on such a wafer or a glass substrate proceeds mainly in a vacuum chamber. In a semiconductor manufacturing apparatus, in manufacturing a semiconductor thin film from a source gas such as silane gas by thermal CVD or the like, A ceramic heater is employed.
Such a heater needs to maintain the uniformity of the temperature while maintaining the heating surface at a high temperature, and thereby to prevent semiconductor defects.
Particularly, a ceramic heater has a heating body buried in a ceramic body, and a temperature fluctuation occurs to some extent on the heating surface.
That is, the conventional heater has a flat surface, which leads to a temperature deviation of the object to be processed (for example, a wafer) when a local temperature deviation occurs on the surface, thereby causing defects and deteriorating the physical properties of the object I have.
Particularly, the heater has a relatively long length, and is disposed in a proper shape through several bending processes. In this case, the difference in the arrangement of the heaters, the difference in calorific value, the difference in the thermal conductivity due to the change in the physical properties of the material caused by the welding part There is a concern that a local temperature deviation may occur in the body.
In this case, since the object to be processed is maintained in close contact with the surface of the heater as in the prior art, the temperature is directly transmitted through the contact portion, so that the temperature deviation is almost transferred to the object to be processed, .
SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems inherent in such conventional heaters, and it is an object of the present invention to maintain the uniformity of heat generation through the surface treatment of the heater, And to provide a method for manufacturing a heater for a semiconductor manufacturing apparatus, which is capable of stripping using elasticity difference by ultraviolet irradiation.
It is another object of the present invention to provide a method for manufacturing a heater for a semiconductor manufacturing apparatus, which can selectively eliminate heater flattening, heating, adhesion of a photosensitive film, and ultraviolet irradiation.
Other objects of the present invention will be understood in detail by the following detailed description.
According to a first aspect of the present invention, there is provided a method of manufacturing a heater of a semiconductor manufacturing apparatus, including: a first step of flattening a surface of a heater; A second step of heating the flattened heater surface; A third step of bonding the photosensitive film to the surface of the heater which is flat and heated; A fourth step of bonding the printed pattern film on the photosensitive film; A fifth step of irradiating ultraviolet rays to the photosensitive film to which the pattern film is adhered to change the material firmly; The pattern film is divided into a white part and a black part so that the white part exposed to ultraviolet light and the black part not exposed are changed in different materials and the sixth step of blurring the surface of the heater with an abrasive to reduce embossing .
A method of manufacturing a heater of a semiconductor manufacturing apparatus according to a second embodiment of the present invention includes: a first step of bonding a photosensitive film to a surface of a heater; A second step of bonding the printed pattern film on the photosensitive film; A third step of irradiating ultraviolet rays onto the photosensitive film to which the pattern film is adhered to change the material firmly; And a fourth step of dividing the pattern film into a white part and a black part so that the white part exposed to the ultraviolet ray and the black part not exposed are differently changed and the surface of the heater is blasted with the abrasive to reduce the embossing .
The heater surface of the present invention is characterized by being planarized by any one of sand blasting, machining and polishing.
A method of manufacturing a heater of a semiconductor manufacturing apparatus according to a third embodiment of the present invention includes: a first step of manufacturing a masking film pattern; A second step of bonding the masking film pattern to a heater surface; And a third step of blasting the surface of the heater with an abrasive to reduce embossing.
The size of the abrasive during blasting for the embossing of the heater surface of the present invention is characterized by being # 10 to # 3,000.
The abrasive of the present invention can be used in a variety of applications such as iron (Fe), stainless steel (STS), aluminum (Al), titanium (Ti), nickel (Ni), Inconell, tungsten, alumina (AlN), yttria (Y2O3), silicon carbide (SiC), boron nitride (BN), zirconia (ZrO2), silicon nitride (Si3N4), quartz (SiO2) and sand.
The heater of the present invention is a heater that is made of alumina (Al2O3), aluminum nitride (AlN), yttria (Y2O3), silicon carbide (SiC), boron nitride (BN), zirconia (ZrO2), silicon nitride (Si3N4) , Iron (Fe), stainless steel (STS), aluminum (Al), titanium (Ti), nickel (Ni), inconel and tungsten.
According to the method for manufacturing a heater for a semiconductor manufacturing apparatus according to the first embodiment of the present invention, the photosensitive film, the ultraviolet (UV) radiation on the printed pattern film, and the surface of the heater through microblasting with respect to the heater surface masked with the photosensitive film It is possible to improve the semiconductor manufacturing efficiency by improving the properties.
In addition, stripping is omitted, and the portion of the pattern film where the ultraviolet rays are irradiated with ultraviolet rays is stripped using the difference in elasticity between the portion irradiated with the ultraviolet ray and the portion irradiated with the ultraviolet ray, and embossing is performed in a continuous process , It is possible to reduce personnel and cost by simplifying and streamlining the process.
According to the method for manufacturing a heater for a semiconductor manufacturing apparatus according to the second and third embodiments of the present invention, the heater surface flattening process, the heating process, the photosensitive film adhering process, the ultraviolet irradiation process, And cost reduction can improve productivity.
Figs. 1A to 1G are diagrams showing manufacturing steps of a heater for a semiconductor manufacturing apparatus according to the present invention. Fig.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail.
It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
The heater manufacturing process of the present invention is as follows.
As shown in FIG. 1A, the surface of the heater is flattened using, for example, a blast machine, a grinder or the like. In addition to these, machining can also be used.
Blasting is a known technique, for example, to trim the surface of a heater made of a metal material using a jet blower that strongly blows sand. The technique using a grinder is also a known technique to smoothly grind the surface of a heater made of a metal material. Trimming the surface of a metal heater using sand blasting or grinding is directly related to maintaining the optimum flatness.
The surface planarization of the heater through blasting machine or grinder or machining can be applied automatically or manually.
Further, the heater to which the present invention is applied may be made of any one of Al2O3, AlN, Y2O3, SiC, BN, ZrO2, Si3N4, A non-metallic ceramic heater made of quartz (SiO2) and a non-metallic ceramic heater made of iron (Fe), stainless steel (STS), aluminum (Al), titanium (Ti), nickel (Ni), inconel, tungsten All metal heaters made of materials are applied.
In the drawing, it is denoted by an AlN heater, but it is only one of the various heater materials.
As shown in FIG. 1B, the surface of the heater which has been flattened by the above process is heated to a predetermined temperature to facilitate adhesion of a film to be described later.
Here, the temperature is a temperature that is set so that adhesion of the film to the heater surface is most effectively performed, and is not necessarily limited to a certain temperature.
As shown in FIG. 1C, a film having a predetermined thickness is bonded to the surface of the heater heated to a predetermined temperature after being planarized by the above processes.
Here, the film is a photosensitive film, and when the ultraviolet ray (UV) is irradiated, the material exposed to the ultraviolet ray is changed and the material of the unexposed portion is changed, so that the film can finally be masked.
The patterned film printed on the photosensitive film is bonded as shown in FIG.
In this state, the selective ultraviolet irradiation site for the photosensitive film is set to the white region and the black region of the printed pattern film.
As shown in FIG. 1E, ultraviolet rays are irradiated on the photosensitive film to change the material of the photosensitive film to be hard.
The area irradiated with ultraviolet light turns into white and becomes hard, while the area not irradiated with ultraviolet light turns into black.
Therefore, the white part of the pattern film irradiated with the ultraviolet rays is hardly changed to lose its elasticity, and the black part where ultraviolet rays are not irradiated remains elastic.
Thereafter, the conventional process of stripping the photosensitive film with a chemical is performed, but the present invention is not described here.
That is, by using the difference in elasticity between the portion irradiated with ultraviolet rays and the portion irradiated with ultraviolet rays of the pattern film, the portion of the pattern film which is irradiated with ultraviolet rays and stripped of elasticity is stripped and embossing is stopped in a continuous process.
By omitting these steps, it is possible to reduce personnel and cost by simplifying and streamlining the process.
In the embossing process, a fine powder material is micro-blasted at a precise high pressure as shown in FIG. 1F, and the embossing is performed by spraying the micro-blasted material on the surface of the heater masked with the photosensitive film as shown in FIG. 1G.
As the powder material for micro-blasting, both a metal material and a non-metal material are applicable.
Examples of the metal material include Fe, stainless steel, aluminum, titanium, nickel, inconel, and tungsten. (Al2O3), aluminum nitride (AlN), yttria (Y2O3), silicon carbide (SiC), boron nitride (BN), zirconia (ZrO2), silicon nitride (Si3N4), quartz .
Here, the blasting is performed in such a manner that the powder materials supplied from the outside are supplied through the blast nozzle, and both the automatic and manual blasting are possible.
The heater according to the present invention having the structure according to the heater manufacturing process can be used in a variety of applications, such as blasting using a metal heater and a powder of metal, blasting using a metal heater and a powder of a nonmetallic material, Blasting using powder, blasting using non-metallic heater and metal powder can be selectively applied, and the effect can be expected.
Further, the heater according to the present invention having the configuration by the above-described heater manufacturing process can be manufactured by, for example, placing the wafer on the upper side of the embossings, thereby, by the height of the embossing and the interval therebetween, A flow path is formed.
Therefore, the gas can be moved through these channels, and the wafer can be efficiently treated during the deposition and drying processes.
Particularly, when the heat of the heater is somewhat different over the entire surface or when the temperature difference of the susceptor heated by the heater partially occurs, the heat energy is directly transferred to the wafer through the embossing and the gas is moved The thermal distribution can be made uniform so that a local temperature difference to the wafer can be prevented.
Next, a second embodiment of the present invention will be described.
The second embodiment of the present invention omits the heater surface planarization process and the heater surface heating process in the first embodiment.
Therefore, the second embodiment of the present invention is characterized in that a first step of adhering a photosensitive film having a predetermined thickness to the surface of a heater as shown in Fig. 1C and a second step of adhering a pattern film printed on the photosensitive film as shown in Fig. A third step of irradiating ultraviolet rays onto the photosensitive film to change the material of the photosensitive film rigidly as shown in FIG. 1E, and a third step of hardening the material of the photosensitive film as shown in FIG. Blasting is performed, and the fourth step is performed by spraying the surface of the heater masked with the photosensitive film to reduce the embossing as shown in FIG. 1G.
By omitting the heater flattening operation, the second embodiment of the present invention having the above-described manufacturing steps can reduce the manufacturing time by suppressing the operation time and the worker input to the heater surface, Instead of omitting the heating step, the photosensitive film may be heated to a predetermined temperature so as to be densely adhered to the surface of the heater. Or when the patterned film is adhered, the photosensitive film may be subjected to conditions such that it adheres appropriately to the surface of the heater.
The third embodiment of the present invention omits the step of adhering the photosensitive film to the heater surface and the step of irradiating the ultraviolet ray to the photosensitive film in the second embodiment.
Accordingly, the third embodiment of the present invention provides a method for manufacturing a semiconductor device, comprising: a first step of manufacturing a masking film pattern; a second step of adhering the masking film pattern to a surface of a heater; And a third step of performing micro-blasting on the surface of the heater masked with the masking film pattern, as shown in FIG. 1G, so as to reduce the embossing.
The third embodiment of the present invention having such a manufacturing step omits the heater flattening operation in the same manner as the second embodiment, thereby suppressing the working time and the worker input on the heater surface which is guaranteed to have a predetermined flatness, Instead of omitting the heating process, the masking film pattern can be heated to a predetermined temperature so as to be densely adhered to the surface of the heater.
In addition, it is possible to perform an efficient process by omitting the step of adhering the photosensitive film and adhering the pattern film thereto, and by directly adhering the masking film pattern to the surface of the heater.
Further, even if the ultraviolet ray irradiation step is omitted by adhering the previously prepared masking film pattern to the heater surface, there is no problem in embossing.
Claims (8)
A second step of heating the flattened heater surface;
A third step of bonding the photosensitive film to the surface of the flattened and heated heater;
A fourth step of bonding a patterned film printed on the photosensitive film;
A fifth step of irradiating ultraviolet rays onto the photosensitive film to which the pattern film is adhered to change the material firmly;
The pattern film is divided into a white portion and a black portion so that the white portion exposed to the ultraviolet ray and the black portion not exposed are different from each other,
And a sixth step of blasting the surface of the heater with an abrasive to reduce embossing.
The heater surface
Wherein the flattening is performed by any one of sandblasting, machining, and polishing.
A second step of bonding a patterned film printed on the photosensitive film;
A third step of irradiating ultraviolet rays onto the photosensitive film to which the pattern film is adhered to change the material firmly; And
The patterned film is divided into a white portion and a black portion so that the white portion exposed to ultraviolet rays and the black portion not exposed are changed in different materials,
And a fourth step of blasting the surface of the heater with an abrasive to reduce embossing.
A second step of bonding the masking film pattern to a heater surface; And
And a third step of blasting the surface of the heater to which the masking film pattern is adhered with an abrasive to reduce the embossing.
Wherein a size of the abrasive during blasting for embossing of the heater surface is in the range of # 10 to # 3,000.
The abrasive
(Fe), stainless steel (STS), aluminum (Al), titanium (Ti), nickel (Ni), Inconell, tungsten, alumina (Al2O3), aluminum nitride Wherein the silicon carbide is any one of silicon carbide (Y2O3), silicon carbide (SiC), boron nitride (BN), zirconia (ZrO2), silicon nitride (Si3N4), quartz (SiO2) and sand.
The heater
(Al2O3), aluminum nitride (AlN), yttria (Y2O3), silicon carbide (SiC), boron nitride (BN), zirconia (ZrO2), silicon nitride (Si3N4), quartz Wherein the heater is made of one material selected from the group consisting of stainless steel (STS), aluminum (Al), titanium (Ti), nickel (Ni), inconel (Inconel) and tungsten (Tungsten).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020140192135A KR20160082792A (en) | 2014-12-29 | 2014-12-29 | Heater manufacturing method for semiconductor manufacturing apparatus and heater thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020140192135A KR20160082792A (en) | 2014-12-29 | 2014-12-29 | Heater manufacturing method for semiconductor manufacturing apparatus and heater thereof |
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Publication Number | Publication Date |
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KR20160082792A true KR20160082792A (en) | 2016-07-11 |
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KR1020140192135A KR20160082792A (en) | 2014-12-29 | 2014-12-29 | Heater manufacturing method for semiconductor manufacturing apparatus and heater thereof |
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KR (1) | KR20160082792A (en) |
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2014
- 2014-12-29 KR KR1020140192135A patent/KR20160082792A/en not_active Application Discontinuation
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