KR20160078594A - Organic light emitting display panel and organic light emitting display device - Google Patents

Abstract

The purpose of the present invention is to provide an organic light-emitting display panel and an organic light-emitting display device, wherein misalignment is prevented and process danger is reduced by increasing the recognition rate of various devices with respect to a process key. To solve the above-mentioned problem, the organic light-emitting display panel according to the present invention comprises: signal lines placed on a substrate; transistors arranged in respective regions where a gate line and a data line among the signal lines intersect with each other; a light-blocking layer placed between the substrate and the transistors; and multiple process keys placed in non-display regions on the substrate. At least one among the signal lines, the electrodes of the transistors, the light-blocking layer and the process keys has a multilayer structure including a conducting layer and one or more light-blocking layers. The process keys further include a reflecting layer on a lowermost layer, and the reflectivity of the reflecting layer with respect to light radiated through the substrate from the outside is greater than the reflectivity of regions around the process keys.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display panel and an organic light emitting display device,

The present invention relates to an organic light emitting display panel and an organic light emitting display.

2. Description of the Related Art [0002] As an information-oriented society develops, there have been various demands for a display device for displaying images. Recently, a liquid crystal display (LCD), a plasma display panel (PDP) Various display devices such as an OLED (Organic Light Emitting Diode Display Device) are being utilized.

2. Description of the Related Art In the field of flat panel display devices, a liquid crystal display device which has been light and consumes less power has been widely used. However, since a liquid crystal display device is a non-emissive device which can not generate light itself, ratio, a viewing angle, and a large area.

Accordingly, a new flat panel display device capable of overcoming the disadvantages of such a liquid crystal display device has actively been developed. One of the new flat panel display devices is a light emitting device that generates light by itself, It has excellent brightness, viewing angle and contrast ratio as compared with the device, and since it does not need a backlight, it is possible to make a lightweight thin type, and is also advantageous in terms of power consumption.

The organic light emitting diode displays an image using light emitted from an organic light emitting diode (OLED) connected to a transistor of each pixel region. The organic light emitting diode includes an organic layer formed of an organic material between an anode and a cathode, Which is capable of driving at a low voltage, has a relatively low power consumption, and is light and can be fabricated on a flexible substrate.

In the process of manufacturing such an OLED display device, a process key (or an alignment key) is formed to prevent misalignment of the substrate and the precise alignment of the substrate is performed by detecting the process key.

Also, the process key is not only required for the process of attaching the substrates, but is also necessary for precise alignment on the stage in the equipment, in which each process step is carried out, when proceeding the sub-process of forming the substrate. Many of these process keys are formed in the non-display area of the substrate.

However, during the process, the necessary devices recognize the process key through the difference between the reflectance of the peripheral portion and the reflectance of the process key, perform the alignment process, and perform the process. Since the difference in reflectance between the process key and the surrounding region is small, A problem that the key is not recognized occurs.

It is an object of the present invention to provide an organic light emitting display panel and an organic light emitting display device capable of raising the recognition rate of various devices for a process key, preventing misalignment, and reducing process risk.

In order to solve the above-described problems, an OLED display panel according to the present invention includes: a signal line located on a substrate; a transistor arranged in a region where a gate line and a data line intersect each other in a signal line; A light shielding layer and a plurality of process keys located in a non-display area on the substrate.

Wherein at least one of the signal line, the electrode of the transistor, the light-shielding layer and the process key has a multilayer structure comprising a conductive layer and at least one light-shielding layer, the process key further comprising a reflective layer on the lowermost layer, The reflectance of the reflective layer with respect to the irradiated light may be greater than the reflectivity of the surrounding area of the process key.

In another aspect, an organic light emitting diode display according to the present invention may include a pattern that is located on a substrate and has a multilayer structure including at least a conductive layer and at least one light blocking layer.

Here, the process key located in the non-display area of the pattern may further include a reflective layer in the lowest layer, and the reflectance of the reflective layer with respect to the light emitted from the outside through the substrate may be greater than the reflectivity of the peripheral area of the process key .

INDUSTRIAL APPLICABILITY The organic light emitting display panel and the organic light emitting display according to the present invention increase the recognition rate of various devices for the process key, prevent misalignment, and reduce process risk.

1 is a schematic system configuration diagram of an organic light emitting display device to which embodiments are applied.
2 is a schematic plan view showing a mother substrate and a process key in a manufacturing process of the organic light emitting display panel according to the embodiments.
3 is a schematic plan view showing an organic light emitting display panel according to embodiments.
4 is a cross-sectional view of an organic light emitting display panel according to an embodiment.
5 is a cross-sectional view of an organic light emitting display panel according to another embodiment.
FIG. 6A is a sectional view showing an organic light emitting display panel in which a reflective layer is not included in a process key, and FIG. 6B is a sectional view showing an organic light emitting display panel in which a reflective layer is included in a process key.
FIG. 7A is a cross-sectional view and a schematic plan view showing a case where an organic light-emitting display panel in which a reflective layer is not included in a process key is embedded in a tray, FIG. And FIG.
FIG. 8A is a graph showing reflectance of a process key not including a reflection layer, and FIG. 8B is a graph showing reflectance of a process key including a reflection layer.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference numerals whenever possible, even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In describing the components of the invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected to or connected to the other component, It should be understood that an element may be "connected," "coupled," or "connected." In the same context, when an element is described as being formed on an "upper" or "lower" side of another element, the element may be formed either directly or indirectly through another element As will be understood by those skilled in the art.

1 is a schematic system configuration diagram of an organic light emitting display device to which embodiments are applied.

1, the OLED display 100 includes m data lines DL1, ..., DLm, m: a natural number) and n gate lines GL1, ..., GLn, n: A data driver 120 for driving the m data lines DL1 to DLm and a gate driver for sequentially driving n gate lines GL1 to GLn, A timing controller 110 for controlling the data driver 120 and the gate driver 130, and the like.

First, the timing controller 110 controls the data driver 120 based on the vertical / horizontal synchronizing signals (Vsync, Hsync) input from the host system and the external timing signals such as the video data (data) and the clock signal (CLK) And a gate control signal (GCS) for controlling the data driving signal (DCS) and the gate driving unit 130 to output the data control signal (DCS). The timing controller 110 may convert the video data input from the host system to a data signal format used by the data driver 120 and supply the converted video data 'data' to the data driver 120 have.

In response to the data control signal DCS and the converted video data 'data' input from the timing controller 110, the data driver 120 converts the video data 'data' into a data signal Analog pixel signals or data voltages) and supplies them to the data lines D1 to Dm.

The gate driver 130 sequentially supplies a scan signal (a gate pulse, a scan pulse, and a gate-on signal) to the gate lines G1 to Gn in response to a gate control signal GCS input from the timing controller 110 do.

1, the gate driver 130 may be located on one side of the display panel 140, or on both sides of the display panel 140 in two.

Each pixel P on the organic light emitting display panel 140 may be formed in an area defined by the data lines D1 to Dm and the gate lines G1 to Gn and arranged in a matrix form.

The organic light emitting diode display 100 according to the embodiments includes a multilayer structure including a conductive layer (not shown) and at least one light blocking layer (not shown) on a substrate (not shown) (Not shown). Here, the reflectance of a reflective layer (not shown) with respect to light externally irradiated through a substrate (not shown) may be greater than that of a peripheral region of a process key (not shown).

The pattern (not shown) includes signal lines G1 to Gn and D1 to Dm positioned on a substrate (not shown), electrodes of a transistor (not shown), a light-shielding layer (not shown) Key (not shown).

A process key (not shown) located in a non-display area of a pattern (not shown) may be used in the same sense as an alignment key. Such a process key (not shown) may be formed by aligning the organic light emitting display panel 140 in various kinds of manufacturing processes or by using a scribing method for separating the organic light emitting display panel 140 from a mother substrate (not shown) Scribing) process.

Specifically, the signal lines such as the gate lines G1 to Gn, the data lines D1 to Dm and the high potential voltage lines and the gate electrodes, source electrodes (or drain electrodes), shading layers At least one of the process keys (not shown) may include a conductive layer and one or more light blocking layers.

The process key (not shown) further includes a reflective layer (not shown) in the lowest layer, in addition to the conductive layer and one or more light blocking layers. As a result, when light is irradiated from the outside through the substrate, May be formed to be larger than the reflectance of the surrounding region.

Process keys (not shown) of the organic light emitting display 100 may be formed on the same layer as the gate lines G1 to Gn of the signal lines G1 to Gn and D1 to Dm, The thickness is 300 ANGSTROM to 700 ANGSTROM.

As a result, the recognition rate of the process key of various devices including the deposition equipment is improved and misalignment of the OLED display panel 140 is prevented.

Hereinafter, embodiments will be described in detail with reference to the drawings.

FIG. 2 is a schematic plan view showing a mother substrate and a process key in a manufacturing process of the organic light emitting display panel according to the embodiments, and FIG. 3 is a schematic plan view illustrating the organic light emitting display panel according to the embodiments.

2 and 3, the organic light emitting diode display panel 140 includes a plurality of organic light emitting display panels 140 formed on a mother substrate 102, and scribing or cutting ) Process.

During this manufacturing process, a deposition process, a photolithography process, or a scribing process may be included, and a process key 260 for each process may be included for each process.

Here, the process key (or the alignment key 260) performs a function of providing position information so that the OLED display panel 140 can be precisely aligned in each device (or device). The process key 260 also performs a function of providing cutting position information in the scribing process.

However, when misalignment occurs, that is, when various apparatuses can not recognize or incorrectly recognize the process key, exposure and development processes during deposition and photolithography are not performed precisely, The reliability is deteriorated, and the luminous efficiency such as the color recall ratio and the contrast ratio may be deteriorated.

The organic light emitting display panel 140 is divided into an active area AA and a nonactive area NA surrounding the display area AA, And can be located in the non-display area NA of the panel (see Fig. 3).

The display area AA is an area for displaying an image to the outside, and the width, area, area, and the like can be designed variously. In addition, the display area AA refers to an area excluding an edge area of the OLED display panel 140. In this display area AA, a plurality of pixels and signal lines are located.

The non-display area NA is an edge area of the organic light emitting display panel 140, and various signal lines (not shown) and a pad unit (not shown) may be positioned. The width of the non-display area NA can be reduced to lower the aperture ratio.

Various devices used in the manufacturing process of the organic light emitting display panel 140 recognize the process key 260 by analyzing the reflectance difference by irradiating light for alignment. Because the process key 260 according to the embodiments includes a reflective layer (not shown) in the lowest layer, when various devices irradiate light for alignment, a higher reflectivity than the surrounding area is realized, Thereby improving the effect of preventing misalignment.

It should be noted that the mother substrate 102, the organic light emitting display panel 140, the process key 260, and the like shown in FIGS. 2 and 3 are merely examples for convenience of explanation, and the present invention is not limited thereto, It should be noted that the present invention can be designed in various forms and structures.

4 is a cross-sectional view of an organic light emitting display panel according to an embodiment.

4, the OLED display panel 140 includes signal lines 238 and 238 'located on a substrate 204, a gate line 238 and a data line 238' of the signal lines 238 and 238 ' A shading layer 206 positioned between the substrate 204 and the transistors 204 and a plurality of process keys 206 located in the non-display area NA on the substrate 204, 260).

At least one of the signal lines 238 and 238 ', the electrodes 220 and 230 of the transistor, the light shielding layer 206 and the process key 260 are electrically connected to the conductive layers 212, 226, 236, 244 and 244' Layer structure including one or more light blocking layers 208, 222, 232, 240, 240 '.

The process key 260 further includes a reflective layer 262 on the lowest layer and the reflectivity of the reflective layer 262 with respect to light externally irradiated through the substrate 204 is determined by the reflectivity of the peripheral region of the process key 260 .

4, the AA 'portion shows a cross section of the process key 260 in the non-display area NA of the organic light emitting display panel 140, the BB' portion shows a cross section of the portion where the transistor is located, Represents a cross section of a portion where light emission occurs.

It should be noted that the organic light emitting display panel 140 shown in FIG. 4 is merely a cross-sectional view exemplarily illustrated for convenience of explanation, and embodiments are not limited thereto and may be formed in various structures.

4, the organic light emitting display panel 140 includes a light shielding layer 206 formed on a substrate 204, a first insulating layer 214 covering the light shielding layer 206, A bank 252 formed to cover the first electrode 254 and the first electrode 254 located on the transistor and the bank 252 on the first insulating film 214 and the gate line 238, The organic layer 256 and the second electrode 258 may be sequentially formed on the first electrode 252 and the second electrode 258, respectively.

Here, the transistor of the organic light emitting display panel 140 may be, for example, an oxide transistor. The transistor includes a semiconductor layer 216, a second insulating layer 218 formed on the semiconductor layer 216, a gate electrode 220 formed on the second insulating layer 218, a third insulating layer 220 formed on the gate electrode 220, A source electrode / drain electrode 230 formed on the first insulating layer 228 and the third insulating layer 228 and connected to the semiconductor layer 216 through a contact hole. Here, the second insulating film 218 may be a gate insulating film which insulates the gate electrode 220 from the semiconductor layer 216.

The organic light emitting display panel 140 includes a planarization layer 248 formed on the fourth insulation layer 246 and the fourth insulation layer 246 formed on the gate line 238 and the source electrode / . ≪ / RTI >

The substrate 204 may be a glass substrate, a plastic substrate including PET (polyethylene terephthalate), PEN (polyethylenenaphthalate), polyimide, or the like. Further, a buffer layer may be further provided on the substrate 202 to block penetration of impurity elements. The buffer layer may be formed of a single layer or multiple layers of, for example, silicon nitride or silicon oxide.

The semiconductor layer 216 of the transistor may be formed of a metal oxide. For example, the semiconductor layer 216 may be an indium gallium zinc oxide (IGZO), an indium gallium oxide (IGO), an indium zinc oxide (IZO), an indium zinc oxide (IZO) Zinc Tin Oxide), IHZO (Indium Hafnium Zinc Oxide), and IZZO (In Zirconium Zinc Oxide).

The light emitting layer 206 may be formed under the semiconductor layer 216 because the semiconductor layer 216 may change its electrical or chemical properties due to light introduced from the outside. The light-shielding layer 206 is located between the substrate 204 and the light-shielding layer 206, The light shielding layer 206 protects the semiconductor layer 216 from external light and functions to prevent external light from being reflected to reduce visibility, brightness, and contrast ratio characteristics.

At least one of the gate line 238, the light blocking layer 206, the gate electrode 230, and the source electrode / drain electrode 230 may have a multi-layer structure. Specifically, it may be composed of the conductive layers 212, 226, 236, 244 and one or more light blocking layers 264a, 214, 234, 244.

Since the organic light emitting display panel 140 according to the embodiments does not include a polarizer for reducing the reflectance of external light, in order to reduce the reflectance with respect to external light, 264a, 214, 234, and 244 are formed.

Although only one light blocking layer 264a, 214, 234, 244 is shown in FIG. 4, embodiments are not limited thereto and may be a light blocking layer 208, 222, 232, .

The conductive layers 212, 226, 236 and 244 may be formed of any of Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, One metal or an alloy thereof.

The light blocking layers 208, 222, 232, and 240 may be formed of a metal that absorbs the introduced external light, a light absorbent is applied, a metal oxide, or an alloy of a metal oxide and a light absorbing metal. have.

Specifically, the light blocking layers 208, 222, 232, and 240 may be metal oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO). The light incident from the outside passes through the light blocking layer 208, 222, 232, 240 and the light reflected from the interface of the light blocking layers 208, 222, 232, 240 to form the conductive layers 212, 226, 236, And interference between the lights reflected at the other interface occurs so that the introduced light does not return to the outside of the organic light emitting display panel 140 again. Accordingly, deterioration of visibility due to external light can be prevented.

Also, the light blocking layers 208, 222, 232, and 240 may be formed of a metal having a hue of black color that absorbs light. For example, the light blocking layers 208, 222, 232, and 240 may be any one of molybdenum (Mo), chromium (Cr), titanium (Ti), niobium (Nb), manganese (Mn), and tantalum Or an alloy thereof. However, the embodiments are not limited thereto and may be other metals capable of absorbing light. Thus, it is possible to prevent external light from being reflected back to the outside.

The conductive layer 244 of the gate line 238, the conductive layer 212 of the light shielding layer 206, the conductive layer 226 of the gate electrode 220 and the conductive layer 236 of the source electrode / Each may be formed of the same material or may be formed of different materials. The light blocking layer 214 of the gate line 238, the light blocking layer 214 of the light blocking layer 208, the light blocking layer 222 of the gate electrode 220 and the light blocking layer 232 of the source electrode / ) May be formed of the same material, or may be formed of different materials.

The first insulating film 214, the second insulating film 218, the third insulating film 228 and the fourth insulating film 246 are formed of SiO _x , SiN _x , SiON, Al ₂ O ₃ , TiO ₂ , Ta ₂ O ₅ , An inorganic insulating material containing one of HfO ₂ , ZrO ₂ , BST and PZT, an organic insulating material comprising a benzocyclobutene (BCB) or an acryl resin, or a combination thereof .

4, the organic light emitting display panel 140 includes a first insulating layer 214 formed on the substrate 204, a third insulating layer 228 formed on the first insulating layer 214, A signal line 238 'formed on the third insulating film 228, a fourth insulating film 246 formed on the signal line, a color filter 248 formed on the fourth insulating film 246, a color filter 248, A first electrode 254 formed on the planarization layer 248 and a bank 252 formed along the edge of the first electrode 254 to expose a portion of the first electrode 254. The planarization layer 248 is formed on the planarization layer 248, And an organic layer 256 and a second electrode 258 which are sequentially stacked on the first electrode 254 and the bank 252.

Here, the signal line 238 'may include a data line 238', a reference voltage line, and the like, and has a multilayer structure of a conductive layer 244 'and one or more light blocking layers 240'.

The conductive layer 244 'may be formed of any one of Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, But is not limited thereto.

The light blocking layer 240 'may be formed of a metal oxide, a light absorbing metal, or an alloy thereof.

In addition, although a light blocking layer 240 'made of a single layer is shown in FIG. 4, the light blocking layer 240' may be formed of multiple layers.

The first electrode 254 may be an anode electrode (positive electrode), and may have a relatively large work function value and may include a transparent conductive material such as a metal oxide such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) : Mixtures of metals and oxides such as Al or SnO2: Sb, poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene (PEDT), polypyrrole and polyaniline The same conductive polymer or the like. The first electrode 254 may be a carbon nanotube (CNT), a graphene, a silver nano wire, or the like.

The bank 252 has a grid-like lattice structure as a whole on the substrate 204 and surrounds the edge of the first electrode 254 and exposes a part of the first electrode 254. [ The bank 252 may also be formed of a material having a hydrophobic organic material such as polystyrene, polymethylmethacrylate (PMMA), benzocyclobuteneseries resin, siloxane-based resin siloxane series resin, silane resin, acrylic resin and the like.

The organic layer 256 may include a hole injecting layer, a hole transporting layer, a light emitting layer, a light emitting auxiliary layer, an electron transporting layer, and an electron injecting layer. The organic layer 256 of FIG. 4 is applied over the entire surface without patterning. And the patterning process is omitted, thereby simplifying the process.

A second electrode 258 is formed on the organic layer 256. The second electrode 258 may be a cathode electrode (negative electrode) and may have a relatively low work function value. For example, in the case of the bottom emission type, the second electrode 258 may be a metal and may be a single layer of an alloy composed of a first metal such as Ag and a second metal such as Mg, Or may be a plurality of layers.

In this specification, the first electrode 254 may be used in the same sense as the pixel electrode, the pixel electrode, the anode electrode, or the anode, and the second electrode 258 may be used in the same meaning as the common electrode, the cathode electrode, .

The organic light emitting display (OLED) of the organic light emitting display panel 140 shown in FIG. 4 may be a white OLED that emits white light. The organic light emitting OLED includes a first electrode 254, an organic layer 256, and a second electrode 258. The organic layer of such an organic light emitting OLED has a process advantage that can be applied to the front side in one process, in which case a color filter 248 can be included.

The color filter 248 of each subpixel may have any one of red, blue, and green colors. Also, in the case of a subpixel in which white is realized, the color filter 248 may not be formed. A black matrix (not shown) made of a material capable of absorbing external light may be provided between the color filters 248.

When the organic light emitting display panel 140 is a bottom emission type, the color filter 248 may be positioned below the first electrode 254. [ The light generated in the organic layer is reflected by the second electrode 258 which is a cathode electrode, passes through the color filter 248, and exits to the outside of the OLED display panel 140.

4, the organic light emitting diode display panel 140 includes a substrate 204, a first insulating layer 214 located on the substrate, a first insulating layer 214 located on the first insulating layer 214, A third insulating film 228, and a plurality of process keys 260 located on the third insulating film, which are located in the non-display area NA. Although one process key 260 is shown in FIG. 4, the process key 260 according to embodiments is not limited thereto, and may have other shapes and numbers.

Specifically, the process key 260 is composed of a reflective layer 262 located on the lowest layer, a light blocking layer 264 located on the reflective layer 262, and a conductive layer 268 located on the light blocking layer 264. However, this is illustratively shown for convenience of explanation, and the process key 260 according to embodiments may include a light blocking layer 264 of two or more layers, and may be formed in other shapes or shapes .

The conductive layer 268 may be formed of any one of metals of Al, Pt, Pd, Ag, Mg, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, But it is not limited thereto.

The light blocking layer 264 may be in the form of a metal that absorbs the introduced external light, a light absorbent is applied, a metal oxide, or an alloy of a metal oxide and a light absorbing metal.

Specifically, the light blocking layer 264 may be a metal oxide such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

In addition, the light blocking layer 264 may be formed of a metal having a hue of black color that absorbs light. For example, the light blocking layer 264 may be any one of molybdenum (Mo), chrome (Cr), titanium (Ti), niobium (Nb), manganese (Mn), tantalum . However, the embodiments are not limited thereto and may be other metals capable of absorbing light.

The process key 260 is formed in the same layer as the various signal lines 238 and 238 'including the gate line 238. [ In other words, in the process of forming the OLED display panel 140, it may be formed simultaneously with the signal lines 238 and 238 '.

Specifically, although not shown in the drawing, after forming the third insulating film 228, a step of forming the reflective layer 262, which is the lowermost layer of the process key 260, is performed.

First, a material forming the reflective layer 262 is deposited on the third insulating film 228. The deposition may be performed by a method such as chemical vapor deposition (CVD) or physical vapor deposition (PVD).

Thereafter, it can be patterned, for example, using a mask such as a blade. That is, etching is performed on the region excluding the region masked by the mask, and then the light blocking layer 264 and the conductive layer 268 are sequentially formed on the masked region.

The reflective layer 262 may be made of, for example, molybdenum (Mo) or molybdenum-titanium alloy (MoTi). The reflective layer 262 may be formed of the same material as the light blocking layer 264, or may be formed of a different material.

The reflective layer 262 functions to increase the reflectivity for light illuminated through the substrate 204 in various equipment for alignment and to raise the recognition rate for the process key 260 of the equipment or device. As a result, misalignment is prevented, process risks are reduced, and product reliability is improved. This is because the equipment or device irradiates light for alignment and recognizes the process key 260 as a difference in reflectance.

In other words, when the process key 260 does not include the reflective layer 262, if the device or the apparatus is irradiated with light for alignment of the organic light emitting display panel 140, the light shielding layer 206 and various The recognition rate for the process key 260 is lowered because the reflectance is the same as that of the light blocking layers 208, 222, 232 and 240 such as the signal lines 238 and 238 '. Further, for example, when the organic light emitting display panel 140 is embedded in a tray for deposition, the irradiated light may be incident on a region immediately adjacent to the process key 260, for example, And may be reflected by the tray through the substrate 204, the first insulating layer 214, the third insulating layer 228, the planarization layer 248, and the like, 264 is insignificant, the process key 260 may not be correctly recognized.

On the other hand, if the reflective layer 262 is included in the process key 260, the reflectance of the light irradiated by the equipment can be increased, and the recognition rate of the process key 260 can be improved.

For example, when the reflection layer 262 of the process key 260 is made of molybdenum (Mo) or a molybdenum-titanium alloy (MoTi), the thickness t of the reflection layer 262 may be 300 Å to 700 Å. The thickness t of the reflective layer 262 that can maximize the reflectivity can be calculated from the following equation (1).

[Equation 1]

In the equation (1), n denotes the refractive index of the reflection layer 262, d denotes the refractive index of the reflection layer 262, R denotes the refractive index of the light from the portion where the light irradiated when the light is incident on the reflection layer 262 Means the distance to the part where the reflected light comes out.

When the reflective layer 262 is made of molybdenum (Mo) or molybdenum-titanium alloy (MoTi) and the thickness t of the reflective layer 262 is 300 to 700 angstroms, the reflectance for light can be maximized, The recognition rate for the key can also be increased.

In addition, when the light blocking layer 264 is made of the same material as the reflective layer 262, the sum of the thickness t of the light blocking layer 264 and the reflective layer 262 may be a thickness at which the reflectance can be maximized.

5 is a cross-sectional view of an organic light emitting display panel according to another embodiment.

In FIG. 5, the description of the same structure as FIG. 4 is omitted.

5, the light-shielding layer 206, the signal lines 238 and 238 ', and the process key 260 of the organic light emitting display panel 140 may include one or more light blocking layers 208, 210, 240, 242, and 240 242 ', 264, and 266 and conductive layers 212, 244, 244', and 268, respectively.

The light blocking layers 208, 210, 240, 242, 240 ', 242', 264 and 266 are formed of a first barrier layer 210, 242, 242 ' And second blocking layers 208, 240, 240 ', and 264.

In the case of the first blocking layers 210, 242, 242 ', and 266, the reflectance is reduced through destructive interference with external light while in the case of the second blocking layers 208, 240, 240' It performs the function of destroying.

As described above, in the case of the organic light emitting display panel 140 according to the embodiments, since the polarizing plate or the polarizing film is omitted, in order to reduce the reflectance for the light incident from the outside, the light blocking layers 208 and 210 , 240, 242, 240 ', 242', 264, 266). By not including the polarizing plate, the thickness of the product is reduced and the manufacturing cost is reduced.

However, since the process key 260 may cause a problem that the recognition rate for recognizing the process key 260 is lowered by the equipment or the apparatus for the process while reducing the reflectance, the process key 260 may reflect the reflectance And a reflective layer 262 for increasing the reflectivity.

It should be noted that the embodiments are not limited to the organic light emitting display panel 140 shown in FIG. 5, and the gate electrode 220 and the source electrode / drain electrode 230 may also have a multilayer structure.

FIG. 6A is a sectional view showing an organic light emitting display panel in which a reflective layer is not included in a process key, and FIG. 6B is a sectional view showing an organic light emitting display panel in which a reflective layer is included in a process key.

6A and 6B, the OLED display panel 140 includes two layers of light blocking layers 208, 210, 222, 224, 232, 234, 240, 242, 240 ', 242' Shielding layer 206, the gate line 238, the gate electrode 220, the source electrode / drain electrode 230 and the conductive layers 212, 226, 236, 244, 244 ' Key < / RTI >

6A shows a case where the process key 260 does not include the reflection layer 262 and FIG. 6B shows a case where the reflection layer 262 is included in the lowermost layer of the process key 260. FIG.

When the process key 260 does not include the reflection layer 262, the lights L1, L2 and L3 introduced from the outside are reflected by the light blocking layers 208, 210, 222, 224, 232, 234, 240, 242, 240 ' , 242 ', 264, and 266, and are hardly reflected. Since there is no difference in reflectance between the process key 260 and the light shielding layer 206 and the gate line 238 which are other structures, the recognition rate of the process key 260 of the equipment or apparatus used in the process is remarkably low (See Fig. 6A).

6B, when the reflective layer 262 is included in the process key 260, the third light L3 introduced toward the reflective layer 262 is incident on the reflective layer 262 in the direction of the gate line 238 Has a significantly higher reflectance than the first light (L1) and the second light (L2) introduced toward the light shielding layer (206). Accordingly, the apparatus or the apparatus can more easily recognize the process key 260, and various problems due to misalignment can be prevented.

FIG. 7A is a cross-sectional view and a schematic plan view showing a case where an organic light-emitting display panel in which a reflective layer is not included in a process key is embedded in a tray, FIG. And FIG.

Referring to FIG. 7A, the organic light emitting display panel 140 is embedded in the tray 272 during the manufacturing process. The manufacturing process may be, for example, a deposition process or a scribing process.

The tray 272 may be made of, for example, a stainless steel metal and the second barrier layer 264 of the process key 260 may be made of molybdenum (Mo) or molybdenum-titanium (MoTi) alloy.

In the process of recognizing the difference in reflectance and recognizing the process key 260 when the process key 260 does not include the reflection layer 262 and the fourth light L4 is irradiated, If the difference between the reflectance and the reflectance of the process key 260 in the second blocking layer 264 is insignificant, the recognition rate for the process key 260 is lowered (see plan view).

7B, when the fifth light L5 is irradiated, the reflectance at the tray 262 is relatively small, but because the reflectance at the reflective layer 262 of the process key 260 is relatively large, The recognition rate for the key 260 is increased (see the plan view).

FIG. 8A is a graph showing reflectance of a process key not including a reflection layer, and FIG. 8B is a graph showing reflectance of a process key including a reflection layer.

This experiment was conducted using light having a wavelength of 360 nm to 740 nm and an incident angle of light was 8 degrees from a direction perpendicular to the substrate 204, and an integrating sphere type device was used. The size of the sample used for the measurement was 3 mm in diameter and it was experimented in an environment of matte writing paper. The material forming the reflective layer 262 is molybdenum (Mo) and has a thickness of 500 angstroms. Hereinafter, the reflectance means the ratio of the light reflected to the incident light.

8A and 8B, the average of the light reflectance for the process key 260 without the reflective layer is approximately 7.5% (FIG. 8A). On the other hand, when the process key 260 including the reflective layer 262 is irradiated with light, the reflectivity of the light reflected on the reflective layer 262 is remarkably high as 42.9% (FIG. 8B).

Accordingly, when the apparatus or the apparatus is irradiated with light, the reflectance difference between the process key 260 and the surrounding region is remarkable, so that the process key 260 is more easily recognized and an effect of preventing misalignment occurs .

In summary, the organic light emitting display panel 140 or the organic light emitting display 100 includes a reflective layer 262 on the lowest layer so that the deposition or scribing device can easily recognize the process key 260 , It is possible to prevent misalignment and improve the reliability of the product.

Although the embodiments have been described with reference to the drawings, the present invention is not limited thereto.

It is to be understood that the terms "comprises", "comprising", or "having" as used in the foregoing description mean that the constituent element can be implanted unless specifically stated to the contrary, But should be construed as further including other elements. All terms, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used terms, such as predefined terms, should be interpreted to be consistent with the contextual meanings of the related art, and are not to be construed as ideal or overly formal, unless expressly defined to the contrary.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

204: substrate 214: first insulating film
218: second insulating film 220: gate electrode
228: third insulating film 254: first electrode
256: organic layer 258: second electrode

Claims (10)

A signal line located on a substrate;
A transistor disposed in each of the signal lines in a region where a gate line and a data line cross each other;
A light shielding layer disposed between the substrate and the transistor; And
And a plurality of process keys located in a non-display area on the substrate,
At least one of the signal line, the electrode of the transistor, the light shielding layer, and the process key has a multilayer structure including a conductive layer and at least one light blocking layer,
Wherein the process key further comprises a reflective layer on the lowest layer and wherein the reflectance of the reflective layer with respect to light externally irradiated through the substrate is greater than the reflectivity of the surrounding area of the process key. The method according to claim 1,
Wherein the reflective layer of the process key has a thickness of 300 to 700 ANGSTROM. The method according to claim 1,
Wherein the process key is located on the same layer as the gate line. The method according to claim 1,
Wherein the light blocking layer is made of a metal oxide, a light absorbing metal, or an alloy thereof. The method according to claim 1,
Wherein the light blocking layer comprises a first blocking layer made of a metal oxide and a second blocking layer made of a metal absorbing light. The method according to claim 1,
Wherein the light blocking layer and the reflective layer are made of the same or different materials. A pattern on the substrate, the pattern having a multilayer structure comprising at least a conductive layer and at least one light-blocking layer,
The process key located in the non-display area of the pattern further includes a reflective layer in the lowest layer,
Wherein a reflectance of the reflective layer with respect to light externally irradiated through the substrate is greater than a reflectance of a peripheral region of the process key. 8. The method of claim 7,
The pattern may be,
A signal line located on the substrate, an electrode of the transistor, and a shading layer positioned to correspond to the transistor. 8. The method of claim 7,
Wherein the reflective layer of the process key has a thickness of 300 ANGSTROM to 700 ANGSTROM. 8. The method of claim 7,
Wherein the process key is located on the same layer as the gate line of the signal line.

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