KR20160069336A - Infrared radiation temperature sensor and temperature measurement method - Google Patents

Infrared radiation temperature sensor and temperature measurement method Download PDF

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KR20160069336A
KR20160069336A KR1020140175175A KR20140175175A KR20160069336A KR 20160069336 A KR20160069336 A KR 20160069336A KR 1020140175175 A KR1020140175175 A KR 1020140175175A KR 20140175175 A KR20140175175 A KR 20140175175A KR 20160069336 A KR20160069336 A KR 20160069336A
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Prior art keywords
temperature
ambient temperature
change
component
infrared
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KR1020140175175A
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Korean (ko)
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KR101651900B1 (en
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김태원
최지원
김규섭
송찬호
김기현
강민우
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(주)파트론
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Priority to PCT/KR2015/011423 priority patent/WO2016093491A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0205—Mechanical elements; Supports for optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/021—Probe covers for thermometers, e.g. tympanic thermometers; Containers for probe covers; Disposable probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables

Abstract

Disclosed is an infrared temperature sensor which incorporates a change in a surrounding temperature to improve measurement accuracy. According to the present invention, the infrared temperature sensor comprises: an infrared sensor to measure infrared radiation radiated from a surface of an object to be measured; a surrounding temperature measuring means to measure a surrounding temperature around the infrared sensor; a storage means to store data about a plurality of offset weights; and a signal processing means to calculate a change of the surrounding temperature according to time, determine one among the offset weights according to the change, and calculate a correction value based on the change and the determined offset weight.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an infrared temperature sensor,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared temperature sensor and a temperature measuring method, and more particularly, to an infrared temperature sensor and a temperature measuring method capable of correcting an error according to a change in ambient temperature.

Infrared temperature sensors have recently been widely used because they can measure temperature in a noncontact manner and have relatively high measurement accuracy. In addition, an infrared temperature sensor is increasingly mounted not only in a dedicated device for measuring temperature but also in a portable electronic device or the like.

The infrared sensor absorbs the energy radiated from the object to be measured by the light receiving unit, converts it into heat energy, converts the temperature rise into an electric signal and detects it. This detection is based on the Stefan-Boltzmann law, where the magnitude of the electrical signal is

Figure pat00001
. ≪ / RTI >
Figure pat00002
Is the surface temperature of the object to be measured,
Figure pat00003
Is the ambient temperature of the infrared sensor. As can be seen, the ambient temperature of the infrared sensor affects the measurement.

Japanese Patent Laid-Open Publication No. 2002-228523 (published on Aug. 14, 2002) discloses a configuration and temperature calculation method of such an infrared temperature sensor (referred to as a non-contact temperature detector in the above publication). Particularly, in a temperature calculating method, a method of correcting a coefficient A for determining an output of an electric signal by expressing it as a function according to an ambient temperature (referred to as environmental temperature in the above publication) is disclosed.

Recent electronic devices incorporating portable temperature measurement devices and temperature sensors tend to be smaller and thinner in form factor. According to this tendency, the inside of the apparatus can change the ambient temperature of the infrared temperature sensor more greatly. Therefore, it is necessary to improve the measurement accuracy by reflecting the change in the ambient temperature.

SUMMARY OF THE INVENTION An object of the present invention is to provide an infrared temperature sensor and a temperature measurement method that can improve measurement accuracy by reflecting a change in ambient temperature in an infrared temperature sensor.

Another problem to be solved by the present invention is to provide an infrared temperature sensor and a temperature measuring method which can improve the measurement accuracy in consideration of heat generation of other components in an infrared temperature sensor mounted on an electronic device including other parts.

According to an aspect of the present invention, there is provided an infrared ray temperature sensor comprising an infrared ray sensor for measuring infrared rays radiated from a surface of an object to be measured, an ambient temperature measuring means for measuring an ambient temperature of the infrared ray sensor, A signal processing means for calculating a change over time of the ambient temperature, determining one of a plurality of offset weights according to the change, and calculating a correction value based on the change and the determined offset weight .

In one embodiment of the present invention, the temperature measuring means repeatedly measures the ambient temperature by a predetermined number of times, and the signal processing means may calculate a variation with time of the plurality of ambient temperatures.

In one embodiment of the present invention, the signal processing means may repeatedly measure the change amount a predetermined number of times and calculate an average of the plurality of change amounts.

In one embodiment of the present invention, the signal processing means may calculate the correction value repeatedly a predetermined number of times, and calculate an average of the plurality of correction values.

In one embodiment of the present invention, the data on the plurality of offset weights include at least one of a coefficient multiplied by a change with time of the ambient temperature and a lookup table selected according to a change with time of the ambient temperature can do.

According to another aspect of the present invention, there is provided an infrared ray temperature sensor mounted on an electronic device, the infrared ray temperature sensor comprising: an infrared ray sensor for measuring infrared rays radiated from a surface of an object; An ambient temperature measurement means, means for receiving information about the heat generation of at least one component included in the electronic device, calculating an expected change in the ambient temperature based on information about the heat generation of the component, And a signal processing means for calculating a correction value based on the correction value.

In an embodiment of the present invention, the electronic device includes at least one of a display device, a process device, a memory device, a communication modem device, a power supply device, a battery, a camera module, a light emitting diode, . ≪ / RTI >

In one embodiment of the present invention, the signal processing unit may calculate a predicted change in the ambient temperature in consideration of the influence of the heat generation of the component on the ambient temperature.

In one embodiment of the present invention, the influence of the heat generation of the component on the ambient temperature may be determined by the distance between the component and the infrared sensor.

In one embodiment of the present invention, the apparatus further includes storage means for storing data relating to at least one offset weight, wherein the signal processing means determines an offset weight according to the exothermic component, And calculating a predicted change of the ambient temperature based on the determined offset weight, and calculating a correction value based on the predicted change amount of the ambient temperature.

In one embodiment of the present invention, the information on the heat generation of the component includes at least one of a temperature of the component, a heating value of the component, a consumed power consumed by the component, a predicted temperature of the component, And an estimated power consumption.

According to another aspect of the present invention, there is provided a temperature measuring method comprising the steps of measuring infrared rays radiated to an infrared sensor from a surface of an object to be measured, measuring an ambient temperature of the infrared sensor, Calculating an offset weight based on a change with time of the ambient temperature, calculating a correction value based on a change with time of the ambient temperature and the determined offset weight, and using the correction value And correcting the measurement temperature of the measurement object.

In one embodiment of the present invention, the step of measuring the ambient temperature may include the step of repeatedly measuring the ambient temperature by a predetermined number of times, and the step of calculating the change of the ambient temperature with time may include: And calculating a variation with time of the plurality of ambient temperatures.

In one embodiment of the present invention, the step of calculating a change with time of the ambient temperature may further include a step of repeatedly measuring the change amount by a predetermined number of times and calculating an average of the plurality of change amounts have.

In one embodiment of the present invention, the step of calculating the correction value may include a step of calculating the correction value repeatedly a predetermined number of times, and calculating an average of the plurality of correction values.

According to another aspect of the present invention, there is provided a temperature measuring method for mounting on an electronic device, comprising the steps of: measuring infrared radiation radiated from the surface of an object to be measured to an infrared sensor; Comprising the steps of: measuring a temperature of the component; receiving information about the heat generation of at least one component included in the electronic device; calculating an expected change in the ambient temperature based on information about the heat generation of the component; Calculating a correction value based on the change, and correcting a measurement temperature of the measurement object using the correction value.

In one embodiment of the present invention, the step of receiving information on the heat generation of the component comprises the steps of: displaying the display device, the memory device, the process device, the communication modem device, the power supply device, the battery, the camera module, the light emitting diode, And receiving information regarding the heat generation of at least one of the generating devices.

In one embodiment of the present invention, the step of calculating a predicted change in ambient temperature may include determining an offset weight according to the exothermic component, determining information about heat generation of the component, And calculating a predicted change in temperature.

In one embodiment of the present invention, the information on the heat generation of the component includes at least one of a temperature of the component, a heating value of the component, a consumed power consumed by the component, a predicted temperature of the component, And an estimated power consumption.

The infrared temperature sensor and the temperature measurement method according to an embodiment of the present invention can improve the measurement accuracy by reflecting a change in ambient temperature.

In addition, when the infrared temperature sensor and the temperature measurement method according to an embodiment of the present invention are mounted on an electronic device including other components, the measurement accuracy can be improved in consideration of heat generation of other components.

1 shows a cross-sectional view of an exemplary embodiment of an infrared temperature sensor according to an embodiment of the present invention.
2 is a flowchart for explaining a temperature correction process of an infrared temperature sensor according to an embodiment of the present invention.
3 is a perspective view showing an infrared ray temperature sensor and a component according to an embodiment of the present invention.
4 is a flowchart for explaining a temperature correction process of an infrared temperature sensor according to an embodiment of the present invention.
5 is a flowchart illustrating a method of measuring a temperature according to an embodiment of the present invention.
6 is a flowchart illustrating a method of measuring a temperature according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the present invention, if it is judged that it is possible to make the gist of the present invention obscure by adding a detailed description of a technique or configuration already known in the field, it is omitted from the detailed description. In addition, terms used in the present specification are terms used to appropriately express the embodiments of the present invention, which may vary depending on the person or custom in the relevant field. Therefore, the definitions of these terms should be based on the contents throughout this specification.

The infrared ray temperature sensor of the present invention is an apparatus for measuring the temperature of an object to be measured. Particularly, the infrared temperature sensor is characterized in that the temperature can be measured even in a non-contact state with the object to be measured.

1 shows a cross-sectional view of an exemplary embodiment of an infrared temperature sensor according to an embodiment of the present invention. Referring to FIG. 1, an infrared temperature sensor can be used in an electronic device. Here, the electronic device refers to a device that receives a power supply and performs a specific function. In particular, the electronic device may be a portable electronic device. For example, the electronic device may be a smart phone, a cellular telephone, a laptop computer, a tablet computer, a media player, a headphone device, a wearable electronic device, a portable thermometer, and the like.

The infrared temperature sensor senses the temperature by measuring the energy radiated from the object to be measured. Radiated radiant energy emitted from any object can be described by Stefan-Boltzmann law. The Stefan-Boltzmann law is expressed as

Figure pat00004

Where E is the radiant energy radiated per unit area, epsilon is the emissivity of the surface, sigma is the Stefan-Boltzmann constant and T is the temperature of the surface. According to this, on the surface of the object to be measured, energy proportional to the fourth power of the temperature is radiated.

When an infrared ray is irradiated to the light receiving portion of the infrared sensor 100, an electrical signal is generated. The intensity of the infrared rays received by the light receiving unit corresponds to the difference between the infrared rays radiated from the surface of the object and the infrared rays emitted by the light receiving unit of the infrared sensor 100 itself. Therefore, the intensity of the pure infrared light received by the light receiving unit of the infrared sensor 100 can be expressed as follows.

Figure pat00005

here,

Figure pat00006
Is the intensity of infrared rays received by the light receiving unit of the infrared sensor 100,
Figure pat00007
Is the intensity of infrared rays radiated from the surface of the measurement object,
Figure pat00008
Is the intensity of infrared rays emitted by the light receiving unit of the infrared sensor 100. [

Here, the emissivity of the surface of the object to be measured is

Figure pat00009
, The light receiving portion of the infrared sensor 100 is regarded as an ideal black body and the emissivity is set to 1
Figure pat00010
Wow
Figure pat00011
Can be expressed as follows.

Figure pat00012

Figure pat00013

here,

Figure pat00014
Is the surface temperature of the object to be measured,
Figure pat00015
Is the temperature of the light receiving portion of the infrared sensor 100. [ When the two equations are collectively summarized, the temperature of the object to be measured can be expressed as follows.

Figure pat00016

As can be seen from the above equation, the temperature of the object to be measured can be changed by the temperature of the light receiving unit of the infrared sensor 100. Here, the temperature of the light receiving unit of the infrared sensor 100 may be regarded as the same as the ambient temperature of the infrared sensor 100 measured by the ambient temperature measuring unit 200 of the infrared sensor 100. [ This consideration is due to the fact that the ambient temperature measuring means 200 and the light receiving portion of the infrared sensor 100 form a thermal equilibrium.

As described above, the infrared temperature sensor of the present invention can be mounted on an electronic device. The electronic device may include at least one component capable of generating heat. For example, the electronic device may include at least one of a display device, a display device, a process device, a memory device, a communication modem device, a power device, a battery, a camera module, a light emitting diode, a speaker device and a vibration generator. The devices may generate heat as they are powered on.

The heat generated by these components can also directly or indirectly affect the infrared temperature sensor. As a result, the ambient temperature T a measured by the ambient temperature measuring means 200 can be changed. Also, as the heat generation of the component continuously changes, the ambient temperature may be continuously changed. The continuous change of the ambient temperature can break the thermal equilibrium of the ambient temperature measuring means 200 and the light receiving portion of the infrared sensor 100. In this case, the temperature change of the light receiving portion of the infrared sensor 100 may be made later than the change of the ambient temperature T a . Therefore, in such a case, an error may occur in the temperature sensing, and means and method for correcting it may be necessary.

Hereinafter, an infrared ray temperature sensor according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2.

1 shows a cross-sectional view of an exemplary embodiment of an infrared temperature sensor according to an embodiment of the present invention. 2 is a flowchart for explaining a temperature correction process of an infrared temperature sensor according to an embodiment of the present invention.

1, an infrared temperature sensor may include an infrared sensor 100, an ambient temperature measuring unit 200, a storage unit 300, a signal processing unit 400, and a housing 500.

Here, the infrared sensor 100, the ambient temperature measuring means 200, the storage means 300, and the signal processing means 400 may be formed as separate chips, or two or more of them may be formed as a single chip Lt; / RTI > The infrared sensor 100, the ambient temperature measuring means 200, the storage means 300 and the signal processing means 400 may be housed inside the housing 500 or outside the housing 500, It may only be electrically connected.

1, the infrared sensor 100 and the ambient temperature measuring means 200 are formed in the form of a single chip, and the storage means 300 and the signal processing means 400 are formed in the form of one chip, As shown in FIG. And both of these chips are shown as being located inside the housing 500.

At least the infrared sensor 100 is preferably housed inside the housing 500. The housing 500 may include an opening 510 formed at a position opposite to the light receiving portion of the infrared sensor 100. The housing 500 is mounted on the electronic device such that the opening 510 is exposed to the outside. Accordingly, the light emitted from the surface of the measurement object is irradiated to the light receiving portion of the infrared sensor 100 through the opening 510.

The infrared sensor 100 is a sensor that absorbs light corresponding to an infrared band and converts the light into an electric signal (V). For this purpose, a separate infrared transmission optical filter 520 may be provided. The infrared sensor 100 may be, for example, a photodiode, a photoconductor, a quantum sensor by photoelectric conversion, a thermopile, a superconducting sensor, or a thermal sensor that converts a temperature change due to infrared absorption into an electrical signal (V) have.

The infrared sensor 100 continuously absorbs infrared rays at the light receiving unit at a predetermined time interval and generates an electric signal V accordingly. The electric signal V may have the following relationship.

Figure pat00017

Here, K V is a conversion proportional constant of the infrared sensor 100.

The ambient temperature measuring means 200 is means for measuring the ambient temperature T a of the infrared sensor 100. The ambient temperature measuring means 200 may be integrally formed with the infrared sensor 100 or may be located around the infrared sensor 100. The ambient temperature measuring means 200 can be any means that can measure the temperature. The ambient temperature measuring means 200 may be, for example, a thermistor, a resistor whose resistance varies with temperature, a bandgap circuit, or the like.

The measurement temperature T O of the measurement object can be calculated using the ambient temperature T a measured by the ambient temperature measurement means 200. The measured temperature (T O ) can be expressed as:

Figure pat00018

Here, the measured temperature (T 0 ) may be a temperature form expressed in ° C, ° F, or K, or may be a temperature corresponding processed data form that can be converted to a temperature form expressed in ° C, have. If the measured temperature (T 0 ) is the machining power data, the data on the temperature in the subsequent correction process can also be represented by the same pre-machining data. And can be converted to a temperature form expressed in degrees Celsius, F or K, which is generally used after the end of the subsequent calibration process.

The ambient temperature measuring means 200 can repeatedly measure the ambient temperature T a by a predetermined number of times. For example, as shown in FIG. 2, the ambient temperature measuring means 200 can measure the ambient temperature 10 times at 0.1 second intervals. Accordingly, the ambient temperature of the ten time (T a) the measurement result data may be generated. Ambient temperature according to a time generated by the ambient temperature measuring means (200), (T a), the measurement result data may be transmitted to the signal processing means 400.

The signal processing means 400 calculates a change (? Ta /? T) of the ambient temperature measured by the ambient temperature measuring means (200) over time. Specifically, the signal processing means 400 may be the ambient temperature measuring unit 200 receives a result of measuring the ambient temperature (T a) data measured a plurality of times to calculate the variation (ΔT a / Δt) of the time. For example, as shown in FIG. 2, the signal processing means 400 may calculate a change (? Ta /? T) of ambient temperature over time using 10 data measured ten times at 0.1 second intervals. The signal processing means 400 can calculate the slope of the change graph of the ambient temperature T a with time from this change amount T a / T.

The signal processing means 400 may calculate the average value avg_ΔT a / Δt after repeatedly calculating the variation amount ΔT a / Δt of the ambient temperature by a predetermined number of times. For example, the signal processing means 400 as shown in Figure 2 is to calculate the 10 variation (ΔT a / Δt) with 0.1 second intervals and calculates the average value (avg_ΔT a / Δt) of a single 10 change have. Through this process, it is possible to eliminate the influence of noise or the like generated in the irregular change or the measurement process of the ambient temperature (T a). Thereby accurately grasp the trend of the ambient temperature (T a) during a predetermined time.

The storage means 300 may store data relating to a plurality of offset weights G. [ The storage means 300 may be a non-volatile memory device capable of storing such an offset weight G.

Offset the weight (G) may be a value on the effect on the temperature of the light-receiving section of the infrared sensor 100 is changed (a ΔT / Δt) according to the time of the environmental temperature. For example, as the change in ambient temperature over time (ΔT a / Δt) increases, the offset weight (G) may increase. This increases the variation (ΔT a / Δt) with time of the peripheral temperature means that the change has a significant effect on the light-receiving section of the infrared sensor 100. Offset the weight (G) may be a predetermined value is changed (a ΔT / Δt) according to the time of the ambient temperature by experimental analysis of the effect of the light receiving portion of the infrared sensor 100. The offset weights G may differ depending on the structure and configuration of the infrared temperature sensor and the electronic device.

Offset the weight (G) may be a coefficient (coefficient) which is according to calculating a correction value (C), multiplied by the change (ΔT a / Δt) according to the time of the environmental temperature. When the offset weight (G) is determined by the change (ΔT a / Δt) according to the time of the ambient temperature, the determined offset weight (G) is the correction value multiplied by the change (ΔT a / Δt) according to the time of the ambient temperature (C ) Can be the basis of the output. Further, the offset may be a weight (G) is a method for calculating a correction value (C), change with time of the ambient temperature (ΔT a / Δt) look-up table (look-up table) is selected in accordance with. When the change with time of the ambient temperature (ΔT a / Δt) calculates a correction value (C) by said look-up table corresponding thereto can be calculated.

The signal processing unit 400 may determine the offset weight (G) in accordance with the change with time of the calculated ambient temperature (ΔT a / Δt). And signal processing means 400 can calculate a correction value (C) on the basis of changes (a ΔT / Δt) and the offset weight (G) is determined according to the time of the environmental temperature.

For example, FIG an offset weight (G) is the coefficient multiplied to the change (ΔT a / Δt) according to the time of the ambient temperature, as shown in Figure 2, the correction value (C) can be calculated in the following manner .

Figure pat00019

Here, K C is the correction value (C) conversion proportional constant.

In the above procedure, the average value (avg_ΔT a / Δt) may be used instead of the change ΔT a / Δt over time of the ambient temperature. In this case, it is possible to calculate the correction value C in which the change tendency is more accurately changed as described above. The correction value C in this case can be expressed as follows.

Figure pat00020

The correction value C may reflect an estimate of the future ambient temperature in consideration of the change over time (ΔT a / Δt) of the ambient temperature of the past. The correction value C is used to correct the difference between the ambient temperature actually measured by the ambient temperature measuring means 200 and the temperature of the light receiving portion of the infrared sensor 100 which can be changed subsequently. In addition, it is possible to correct the difference between the time when the ambient temperature measuring means 200 measures the temperature and the time when the infrared sensor 100 measures the infrared absorption amount.

The signal processing means 400 can repeatedly calculate the correction value C a predetermined number of times in this manner and calculate the average (avg_C) of the calculated plurality of correction values. For example, as shown in FIG. 2, the signal processing means 400 can calculate a correction value C 10 times at 0.1 second intervals. And the average of the 10 correction values (avg_C). Through this process, it is possible to eliminate the influence of the irregular change of the correction value C or the noise generated in the measurement process. Accordingly, a relatively correct correction value C can be calculated.

The average (avg_C) of the calculated correction values can be used to correct the measured temperature (T o ) of the infrared temperature sensor. For example, as shown in FIG. 2, the average of the correction values avg_C can be added to the measured temperature (T 0 ) of the infrared ray temperature sensor to calculate the correction temperature (T 0 - C).

Figure pat00021

Where T O _C is the correction temperature of the infrared temperature sensor.

Hereinafter, an infrared ray temperature sensor according to an embodiment of the present invention will be described with reference to FIGS. 3 to 4. FIG.

3 is a perspective view showing an infrared ray temperature sensor and a component according to an embodiment of the present invention. 4 is a flowchart for explaining a temperature correction process of an infrared temperature sensor according to an embodiment of the present invention.

For convenience of description, one embodiment of the infrared temperature sensor will be described with reference to FIGS. 3 to 4, focusing on differences from the embodiment described with reference to FIGS. 1 and 2. FIG.

The infrared temperature sensor can be used in an electronic device. Here, the electronic device refers to a device that receives a power supply and performs a specific function. In particular, the electronic device may be a portable electronic device. For example, the electronic device may be a smart phone, a cellular telephone, a laptop computer, a tablet computer, a media player, a headphone device, a wearable electronic device, a portable thermometer, and the like.

As shown in FIG. 3, the electronic device may include at least one component 600 capable of generating heat. For example, the electronic device may include at least one of a display device, a display device, a process device, a memory device, a communication modem device, a power device, a battery, a camera module, a light emitting diode, a speaker device and a vibration generator. The devices may generate heat as they are powered on.

The signal processing means 400 may receive information regarding the heat generation of at least one component 600 included in the electronic device. Heat may be generated as the component 600 is powered on.

The heat of the component 600 can be transmitted to the infrared temperature sensor. In particular, when the heat generating component 600 and the infrared temperature sensor are mounted on the same substrate 700, heat can be transmitted through the conductive pattern 710 formed on the substrate 700 and the like.

The transmission of the heat of the component 600 to the infrared temperature sensor can be influenced by various factors. In particular, the heat generated by the component 600 is transmitted to the infrared temperature sensor by the distance between the component 600 and the infrared temperature sensor, the heat transfer medium between the component 600 and the infrared temperature sensor, The transmission time and the transmission amount can be determined.

The storage means 300 may store information on the heat transfer efficiency between the component 600 and the infrared temperature sensor. For example, in the storage means 300, the storage means 300 according to the component 600 include a distance between the component 600 and the infrared temperature sensor, a heat transfer medium between the component 600 and the infrared temperature sensor, 600 may be stored.

The information on the heat generation of the component 600 received by the signal processing means 400 is not limited to the data on the temperature, the heat generation amount and the power consumption of the component 600 as well as the estimated temperature, the expected heat generation amount, And may include information regarding at least one.

Signal processing means 400 may, based on information regarding the heat generated by the receiving component 600 to calculate the expected variation of the ambient temperature (ΔT a). Specifically, the signal processing unit 400 may estimate a change in the ambient temperature of the infrared temperature sensor after a predetermined period of time considering the heat generation amount of the current component 600 and the heat transfer efficiency between the component 600 and the infrared temperature sensor . In addition, the signal processing unit 400 can estimate the future heat generation amount of the part 600 in consideration of the future operation mode of the part 600, the power consumption, etc., have.

For example, if the electronic device is powered on, it can be seen that the components 600 of the electronic device will operate according to a predetermined initial boot process. The signal processor may estimate the change in the ambient temperature (ΔT a), and to estimate the heat value of the part 600 to reflect this point, on the basis thereto. In addition, it will be appreciated that the components 600 of the electronic device will operate to perform the function if the electronic device is intended to perform a particular function. The signal processor may estimate the change in the ambient temperature (ΔT a), and to estimate the heat value of the part 600 to reflect this point, on the basis thereto.

In this manner, the signal processing means 400 can estimate the change in the ambient temperature relatively accurately by considering the present or future heating value of the component 600. [ The calculated correction value C can be used to correct the measured temperature of the infrared temperature sensor.

Hereinafter, a temperature measuring method according to an embodiment of the present invention will be described with reference to FIG.

5 is a flowchart illustrating a method of measuring a temperature according to an embodiment of the present invention.

The temperature measuring method described with reference to FIG. 5 relates to a method of calibrating the ambient temperature by using the infrared temperature sensor described with reference to FIG. 1 to FIG. Therefore, for the sake of convenience of explanation, a part overlapping with that described with reference to Figs. 1 to 2 will be omitted.

Referring to FIG. 5, the temperature measuring method includes a step (S100) of measuring infrared rays by the infrared sensor, a step S200 of measuring the ambient temperature by the ambient temperature measuring means, a step S300 A step S400 of calculating an offset weight, a step S500 of calculating a correction value, and a step S600 of correcting the measurement temperature of the measurement object.

The step of measuring the infrared ray by the infrared ray sensor (S100) can measure the infrared ray radiated to the infrared ray sensor 100 from the surface of the object to be measured. Specifically, the infrared sensor 100 can generate an electric signal corresponding to infrared rays absorbed by the light receiving unit.

The step S200 of measuring the ambient temperature by the ambient temperature measuring means may include repeatedly measuring the ambient temperature Ta by a predetermined number of times.

(S300) of calculating a change with time of the ambient temperature includes calculating a change amount? Ta /? T with respect to a plurality of ambient temperatures over time and repeatedly measuring the change amount? Ta /? T by a predetermined number of times , And calculating an average avg_ΔTa / Δt of the plurality of variation amounts.

The step S400 of determining an offset weight is a step of determining one of the data on a plurality of offset weights G stored in the storage means 300 based on a change in time ΔTa / to be.

The step of calculating the correction value (S500) is a step of calculating a correction value based on the change (? Ta /? T) of the ambient temperature with time and the determined offset weight (G). The step of calculating the correction value (S500) may include a step of calculating the correction value repeatedly a predetermined number of times and calculating an average of the plurality of correction values.

The step of correcting the measurement temperature of the measurement object (S600) is a step of correcting the measurement temperature of the measurement object using the correction value.

Hereinafter, a temperature measuring method according to an embodiment of the present invention will be described with reference to FIG.

6 is a flowchart illustrating a method of measuring a temperature according to an embodiment of the present invention.

The temperature measuring method described with reference to FIG. 6 relates to a method of calibrating the ambient temperature by using the infrared temperature sensor described with reference to FIGS. 3 to 4. Therefore, for the sake of convenience of explanation, a part overlapping with those described with reference to Figs. 3 to 4 will be omitted.

Referring to FIG. 6, the temperature measuring method includes a step S110 of measuring the infrared rays by the infrared sensor, a step S210 of measuring the ambient temperature by the ambient temperature measuring means, a step S310 of receiving information on the heat generation of the component, A step S410 of calculating an expected change in the ambient temperature, a step S510 of calculating a correction value, and a step S610 of correcting the measurement temperature of the measurement object.

The temperature measurement method according to the present embodiment is a temperature measurement method using an infrared temperature sensor mounted on an electronic device.

In the step of measuring the infrared rays of the infrared ray sensor (S110), the infrared ray radiated to the infrared ray sensor 100 from the surface of the object can be measured. Specifically, the infrared sensor 100 can generate an electric signal corresponding to infrared rays absorbed by the light receiving unit.

The step of measuring the ambient temperature by the ambient temperature measuring means (S210) may include repeatedly measuring the ambient temperature by a predetermined number of times.

The step S310 of receiving information on the heat generation of the component is a step of receiving information on the heat generation of at least one component included in the electronic device. The step S310 of receiving the information on the heat generation of the component is a step of determining whether or not the heat generation of at least one of the display device, the memory device, the process device, the communication modem device, the power supply device, the battery, the camera module, And a step of receiving information on the information.

The information on the heat generation of the component may include information about at least one of the temperature of the component, the heat generation amount of the component, the power consumption consumed by the component, the expected temperature of the component, the expected heating value of the component, and the expected power consumption of the component.

Calculating the expected change in ambient temperature (S410) is based on information about the heat generation of the component. Calculating the expected change in ambient temperature includes: determining an offset weight (G) according to the exothermic component; calculating information about the heat generation of the component and an expected change in the ambient temperature based on the determined offset weight (G) And the like.

The step of calculating the correction value (S510) is a step of calculating a correction value based on the change (? Ta /? T) of the ambient temperature with time and the determined offset weight (G).

The step of correcting the measurement temperature of the measurement object (S610) is a step of correcting the measurement temperature of the measurement object using the correction value.

Embodiments of the infrared temperature sensor and the temperature measuring method of the present invention have been described above. The present invention is not limited to the above-described embodiments and the accompanying drawings, and various modifications and changes may be made by those skilled in the art to which the present invention pertains. Therefore, the scope of the present invention should be determined by the equivalents of the claims and the claims.

100: Infrared sensor 200: Ambient temperature measuring means
300: storage means 400: signal processing means
500: housing 600: part

Claims (19)

An infrared sensor for measuring infrared rays radiated from a surface of an object to be measured;
An ambient temperature measuring means for measuring an ambient temperature of the infrared sensor;
Storage means for storing data relating to a plurality of offset weights; And
And signal processing means for calculating a change with time of the ambient temperature, determining one of a plurality of offset weights according to the change, and calculating a correction value based on the change and the determined offset weight.
The method according to claim 1,
Wherein the temperature measuring means repeatedly measures the ambient temperature by a predetermined number of times,
Wherein the signal processing means calculates a variation with time of the plurality of ambient temperatures.
3. The method of claim 2,
Wherein the signal processing means repeatedly measures the change amount by a predetermined number of times and calculates an average of the plurality of change amounts.
The method according to claim 1,
Wherein the signal processing means repeatedly calculates the correction value by a predetermined number of times and calculates an average of the plurality of correction values.
The method according to claim 1,
Wherein the data on the plurality of offset weights comprises at least one of a coefficient multiplied by a change with time of the ambient temperature and a lookup table selected according to a change with time of the ambient temperature.
An infrared temperature sensor mounted on an electronic device,
An infrared sensor for measuring infrared rays radiated from a surface of an object to be measured;
An ambient temperature measuring means for measuring a temperature around the infrared sensor;
Receiving information about the heat generation of at least one component included in the electronic device, calculating a predicted change in the ambient temperature based on information about the heat generation of the component, and calculating a correction value based on the estimated change in the ambient temperature An infrared temperature sensor including signal processing means for calculating the infrared signal.
The method according to claim 6,
Wherein the electronic device includes at least one of a display device, a process device, a memory device, a communication modem device, a power supply device, a battery, a camera module, a light emitting diode, a speaker device and a vibration generating device.
The method according to claim 6,
Wherein the signal processing means calculates an expected change in the ambient temperature in consideration of the influence of the heat generation of the component on the ambient temperature.
9. The method of claim 8,
Wherein an influence of the heat generation of the component on the ambient temperature is determined by a distance between the component and the infrared sensor.
The method according to claim 6,
Further comprising storage means for storing data relating to at least one offset weight,
Wherein the signal processing means determines an offset weight according to the exothermic component, calculates a predicted change in the ambient temperature based on the information about the heat generation of the component and the determined offset weight, An infrared temperature sensor for calculating a correction value.
The method according to claim 6,
Wherein the information on the heat generation of the component includes at least information about at least one of a temperature of the component, a heating value of the component, a consumed power consumed by the component, an expected temperature of the component, an expected heating value of the component, And an infrared temperature sensor.
Measuring infrared rays radiated from the surface of the measurement object to the infrared sensor;
Measuring an ambient temperature of the infrared sensor;
Calculating a change with time of the ambient temperature;
Determining an offset weight based on a change over time of the ambient temperature;
Calculating a correction value based on a change with time of the ambient temperature and the determined offset weight; And
And correcting the measurement temperature of the measurement object using the correction value.
13. The method of claim 12,
Wherein the step of measuring the ambient temperature includes the step of repeatedly measuring the ambient temperature by a predetermined number of times,
Wherein calculating the change over time of the ambient temperature comprises calculating a change over time of the plurality of ambient temperatures.
14. The method of claim 13,
Wherein the step of calculating the change with time of the ambient temperature further comprises the step of repeatedly measuring the change amount by a predetermined number of times and calculating an average of the plurality of change amounts.
13. The method of claim 12,
Wherein the step of calculating the correction value includes the step of calculating the correction value repeatedly a predetermined number of times and calculating an average of the plurality of correction values.
A method of measuring temperature mounted on an electronic device,
Measuring infrared rays radiated from the surface of the measurement object to the infrared sensor;
Measuring a temperature around the infrared sensor;
Receiving information on the heat generation of at least one component included in the electronic device;
Calculating an expected change in ambient temperature based on information about the heat generation of the part;
Calculating a correction value based on an expected change in the ambient temperature; And
And correcting the measurement temperature of the measurement object using the correction value.
17. The method of claim 16,
Wherein the step of receiving the information on the heat generation of the component includes a step of generating heat of at least one of a display device, a memory device, a process device, a communication modem device, a power supply device, a battery, a camera module, a light emitting diode, And receiving the information.
17. The method of claim 16,
Calculating the predicted change in ambient temperature may include determining an offset weight according to the exothermic component and calculating a predicted change in ambient temperature based on information about the heat generation of the component and the determined offset weight Comprising a temperature measuring method.
17. The method of claim 16,
Wherein the information on the heat generation of the component includes at least information about at least one of a temperature of the component, a heating value of the component, a consumed power consumed by the component, an expected temperature of the component, an expected heating value of the component, Lt; / RTI >
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