KR20160064537A - Quantum Dot film and Manufacturing Method Thereof - Google Patents

Abstract

The present invention relates to a quantum dot film and a manufacturing method thereof. Since a quantum dot layer, in which multiple quantum dots are placed, is formed with electrospray or electrospinning and a barrier layer, covering the quantum dot layer, is formed on the quantum dot layer with the electrospray or electrospinning. The quantum dot layer and the barrier layer are fused and integrated with each other. Therefore, the present invention is capable of reducing the thickness of a backlight unit, improving productivity by simplifying a manufacturing process for a quantum dot film, and solving tangling or crumpling of an existing quantum dot film by uniformly dispersing the quantum dots, thereby efficiently emitting white light in accordance with unique characteristics of the quantum dots, and emitting a uniform amount of light to the front side of a display panel.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quantum dot film,

The present invention relates to a method for producing a quantum dot film, and more particularly, to a quantum dot film which can uniformly disperse quantum dots by electrospinning or electrospinning, simplify a manufacturing process, and reduce manufacturing cost, and a manufacturing method thereof.

BACKGROUND ART Generally, a backlight unit is a light source device that emits light from behind a liquid crystal display, such as a liquid crystal display (LCD), and uses LEDs as a light source.

The backlight unit uses a combination of red (R), green (G), and blue (B) LED chips as a light source to emit white light when an LED is used as a light source, There is a problem that the number of LED chips is large and an additional feedback system is required when white is implemented, resulting in high manufacturing cost.

1, a backlight unit 1 that emits white light using the quantum dot film 1d has been proposed.

The backlight unit 1 includes a light guide plate 1a, an LED light source disposed on a side surface of the light guide plate 1a, a reflection plate disposed below the light guide plate 1a, a quantum dot film (1d) to emit white light.

For example, when the LED light source is a blue LED, a quantum dot film 1d including quantum dots representing the colors of red (R) and green (G) is used.

Referring to FIG. 2, the quantum dot film 1d includes a quantum dot layer 10 'having quantum dots distributed therein and a barrier layer 20' covering upper and lower surfaces of the quantum dot layer 10 '. The barrier layer 20 'blocks moisture and air from entering the quantum dot layer 10'.

The quantum dot film 1d has a structure in which a barrier layer 20 'is adhered to the upper surface and the lower surface of the quantum dot layer 10', and the quantum dot film 10 'is separately formed between the quantum dot layer 10' and the barrier layer 20 ' There is a problem that the adhesive layer 30 'of the adhesive layer 30' lowers the light transmittance of light, and the manufacturing process is complicated and the manufacturing cost is high.

The quantum dot layer 1 'is formed by forming the quantum dot layer 10' and then bonding the barrier layer 20 'to the upper and lower surfaces of the quantum dot layer 10' There is a problem in that the thickness becomes thick.

In addition, the quantum dot film 1d has a problem that quantum dots are entangled or aggregated in the quantum dot layer 10 ', so that the intrinsic characteristics of the quantum dots are deteriorated, and defects in which uniform light emission is not achieved frequently occur .

Disclosure of the Invention The present invention has been made in view of the above circumstances and provides a quantum dot film which is simple in manufacturing process and low in manufacturing cost and uniformly disperses quantum dots so that uniform and efficient light emission can be achieved in a backlight unit and a manufacturing method thereof The purpose is to do.

According to an aspect of the present invention, there is provided a quantum dot film comprising: a quantum dot layer having a plurality of quantum dots disposed therein; And a barrier layer stacked on the quantum dot layer and covering at least one of an upper surface and a lower surface of the quantum dot layer,

And the barrier layer is integrally formed on the quantum dot layer in a fusion-bonded form.

According to an aspect of the present invention, there is provided a method of manufacturing a quantum dot film, the method comprising: forming a quantum dot layer in which a plurality of quantum dots are disposed by electrospray or electrospinning;

And forming a barrier layer covering the quantum dot layer by electrospinning or electrospinning on the quantum dot layer.

In the present invention, the barrier layer may be provided on the upper and lower surfaces of the quantum dot layer, respectively.

In the present invention, the barrier layer may be made of one material selected from the group consisting of PC (Poly Carbonate), PMMA (poly (methylmethacrylate)) and PVDF (Polyvinylidene Fluoride), PC (Poly Carbonate), PMMA Fluoride) may be mixed resin.

In the present invention, the quantum dot layer may be formed of a polymer resin having the same material as the barrier layer.

The method of manufacturing a quantum dot film according to an embodiment of the present invention may further include the step of forming a barrier layer on the collector by electro-spraying or electro-spinning before forming the quantum dot layer And forming the quantum dot layer may include forming a quantum dot layer on the barrier layer formed on the collector.

In the step of forming the quantum dot layer in the present invention, a quantum dot layer may be formed on the light guide plate.

In the step of forming the barrier layer in the present invention, a barrier layer may be formed in the form of a nonporous film through electric spraying.

In the present invention, the step of forming the quantum dot layer may include forming a quantum layer by electrospinning or electrospinning the polymer resin solution containing the quantum dot.

The present invention has the effect of reducing the thickness of the backlight unit by providing a quantum dot film in the form of a thin film by forming a quantum dot film by electrospinning or electrospinning.

INDUSTRIAL APPLICABILITY The present invention has the effect of simplifying the manufacturing process of the quantum dot film to improve the productivity and reduce the manufacturing cost.

Disclosure of Invention Technical Problem [8] The present invention relates to a method and apparatus for uniformly dispersing quantum dots in a quantum dot film to solve the problem of aggregation and aggregation of quantum dots in conventional quantum dot films, thereby efficiently emitting white light according to the intrinsic properties of quantum dots, .

In particular, the present invention has the effect of improving the quality of the display panel by enabling uniform emission of light to the front of the display panel at a low manufacturing cost when applied to a backlight unit of a large-area display panel of 40 inches or more.

1 is a schematic view showing a general backlight unit
2 is a cross-sectional view of a conventional quantum dot film
3 is a view showing one embodiment of a quantum dot film according to the present invention.
4 is a view showing another embodiment of the quantum dot film according to the present invention
5 is a process diagram showing a method for producing a quantum dot film according to the present invention
6 is a schematic view showing an embodiment of a method for producing a quantum dot film according to the present invention
7 is a schematic view showing another embodiment of the method for producing a quantum dot film according to the present invention

The present invention will now be described in detail with reference to the accompanying drawings. Hereinafter, a repeated description, a known function that may obscure the gist of the present invention, and a detailed description of the configuration will be omitted. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings and the like can be exaggerated for clarity.

The quantum dot film according to an embodiment of the present invention is arranged on a light guide plate of a backlight unit so that the light of the LED light source disposed on the side of the light guide plate can be emitted as white light.

FIG. 3 is a cross-sectional view illustrating a quantum dot film 1d according to an embodiment of the present invention. The quantum dot film 1d according to the embodiment of the present invention includes a quantum dot layer 10 having a plurality of quantum dots 11 disposed therein. ; And a barrier layer 20 formed on the quantum dot layer 10 to cover at least one of the upper and lower surfaces of the quantum dot layer 10.

The barrier layer 20 is integrally formed on the quantum dot layer 10 in a fused form.

Since the barrier layer 20 is integrated with the quantum dot layer 10 in a fusion-bonded form, a separate adhesive layer for attachment to the quantum dot layer 10 is not required, thereby simplifying the manufacturing process and reducing the thickness of the backlight unit So that it can be formed thinner.

The barrier layer 20 is integrally formed on the quantum dot layer 10 in a fused form and is provided on the upper and lower surfaces of the quantum dot layer 10 to cover upper and lower surfaces of the quantum dot layer 10, To prevent moisture from flowing into the quantum dot layer 10 and to prevent the quantum dot layer 10 from being oxidized by contact with air, so that the quantum dot layer 10 has a non-porous form.

The barrier layer 20 may be made of any material selected from the group consisting of PC (Poly Carbonate), PMMA (poly (methylmethacrylate)) and PVDF (polyvinylidene fluoride) methylmethacrylate), and PVDF (polyvinylidene fluoride).

The quantum dot layer 10 includes a quantum dot 11 in a polymer resin layer and the polymer resin layer is formed of any one of PC (Poly Carbonate), PMMA (poly (methylmethacrylate)) and PVDF (Polyvinylidene Fluoride) Or a mixed resin containing at least any one of PC (Poly Carbonate), PMMA (poly (methylmethacrylate)) and PVDF (Polyvinylidene Fluoride), and is made of the same polymer resin as the barrier layer 20 desirable.

The quantum dot layer 10 may be formed of at least one material selected from the group consisting of PS (Polystyrene), EPS (Expandable Polystyrene), PVC (Polyvinyl Chloride), SAN (Styrene Acrylonitrile Copolymer), PU (Vinyl acetate), acrylic resin, epoxy resin (EP), silicone resin (Unicurated polyester) and UP (Unsaturated Polyester) It is also possible to use a mixture of two or more of them or a synthetic resin containing at least one of them.

The quantum dot 11 is a particle in which nano-sized II-IV semiconductor particles form a core. The fluorescence of the quantum dot 11 is a light generated by electrons falling from the conduction band to the valence band.

In an embodiment of the present invention, the quantum dot 11 may comprise any kind of semiconductors, such as II-VI, III-V, IV-VI, IV semiconductors and mixtures thereof. The semiconductor may be at least one of Si, Ge, Sn, Se, Te, B, C, P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, ZnSe, ZnTe, CdS, CdSe, CdxSeySz, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, AlS, AlS, AlSb, GaN, GaP, (Al, Ga, In) 2 (S, Se, Te), GeSe, GeTe, SnS, SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuInS2, Cu2SnS3, CuBr, CuI, Si3N4, Ge3N4, Al2O3, ) 3, CIGS, CGS, (ZnS) y (CuxSn1-xS2) 1-y, or a mixed semiconductor obtained by mixing at least two of these semiconductors. ZnS, CdSe / ZnSe / ZnS, CdSe / ZnSe, ZnSe, ZnSe, ZnSe, ZnSe, and ZnSe, CdSe / CdS / ZnS, CdSe / CdSe / ZnS, CdSe / CdSe / CdSe / CdSe / CdSe / CdSe / CdSe / CdSe / CdSe / CdS, CdTe / ZnS, CuInS2, / ZnS, and Cu2SnS3 / ZnS.

The quantum dot 11 is selected so as to form white light according to the color of the light source of the LED light source used in the corresponding backlight unit. For example, when the LED light source is a blue LED, R) and a quantum dot (11) representing the color of the green (G) are selected and used.

The quantum dot layer 10 may include quantum dots 11 representing at least one color selected from the group consisting of red light, green light, blue light and yellow light among the quantum dots 11 described above. The quantum dots 11 may absorb ultraviolet light having a wavelength between about 100 and about 400 nm and visible light having a wavelength between about 380 and 780 nm. Herein, the blue light may have an emission peak in a wavelength range of from 410 nm to less than 500 nm, the green light may have an emission peak in a wavelength range of from 500 nm to less than 550 nm, and the yellow light may have an emission peak of from 550 nm to less than 600 nm The red light may have an emission peak in a wavelength range of 600 nm or more and less than 660 nm. In the present specification, four colors of blue, green, yellow, and red are used for the sake of convenience. However, it is noted that the wavelength range may include various colors such as orange, indigo, and violet in addition to these colors.

4, the quantum dot film 1d according to another embodiment of the present invention is formed by integrally forming the quantum dot layer 10 on the light guide plate 1a in a fused form, The barrier layer 20 may be laminated on the barrier layer 20. That is, the quantum dot layer 10 is fused onto the light guide plate 1a to be integrally formed.

The quantum dot layer 10 should cover the top and bottom surfaces in order to prevent oxidation due to contact with air and to prevent penetration of moisture. One side of both sides is covered by the light guide plate 1a, By covering the other surface with the layer 20, oxidation due to contact with air is prevented and moisture penetration is prevented.

The quantum dot film 1d according to another embodiment of the present invention directly forms the quantum dot layer 10 on the light guide plate 1a in a fused form so that the barrier layer 20 covering the quantum dot layer 10 ) Can be reduced to make the thickness of the backlight unit slimmer, the manufacturing process is simplified, and the manufacturing cost is further reduced.

The light guide plate 1a receives the light of the LED light source arranged on the side of the backlight unit and uniformly distributes the light over the whole area of the screen through a pattern deposited on the surface, It is clear that omission is omitted.

Since the quantum dot layer 10 is formed directly on the light guide plate 1a by fusion, it is integrated with the light guide plate 1a without a separate adhesive layer, thereby simplifying the manufacturing process, reducing manufacturing cost, So that it can be formed thin.

5, a method for manufacturing a quantum dot film according to an embodiment of the present invention for manufacturing the quantum dot film 1d includes a quantum dot layer 10 in which a plurality of quantum dots are disposed by electrospray or electrospinning, (S200); And forming a barrier layer 20 covering the quantum dot layer 10 by electrospinning or electrospinning on the quantum dot layer 10 (S300).

6, a method of fabricating a quantum dot film according to an embodiment of the present invention includes electro-spraying or electro-spinning before forming the quantum dot layer 10 (S200) Forming a barrier layer 20 on the collector 2 and forming the quantum dot layer 10 in the step S200 includes forming the barrier layer 20 on the collector 2, The quantum dot layer 10 is formed on the quantum dot layer 20 as an example.

The method for producing a quantum dot film according to an embodiment of the present invention includes sequentially depositing a barrier layer 20, the quantum dot layer 10, and the barrier layer 20 on the collector 2 sequentially, while transferring the collector 2 So that the quantum dot film can be continuously produced, and the productivity can be greatly improved.

Referring to FIG. 7, in the method for fabricating a quantum dot film according to another embodiment of the present invention, the step of forming the quantum dot layer 10 may include forming a quantum dot layer 10 on the light guide plate 1a.

The step of forming the quantum dot layer 10 (S200) forms a quantum dot layer 10 in which a plurality of quantum dots 11 are disposed directly on the light guide plate 1a by electric injection or electrospinning.

Then, the barrier layer 20 is formed on the quantum dot layer 10 by electrospinning or electrospinning.

The quantum dot layer 10 and the barrier layer 20 are formed in a laminated structure by electrospinning or electrospinning, and are integrated in such a manner that they are welded to each other at the interface.

The light guide plate 1a and the quantum dot layer 10 are formed such that the quantum dot layer 10 is laminated on the light guide plate 1a by electrospinning or electrospinning so that the quantum dot layer 10 And are integrally fused directly on the light guide plate 1a.

Since the quantum dot layer 10 and the barrier layer 20 are integrally formed by being fused together by electrospinning or electrospinning, a separate adhesive layer for attaching each other is not required.

The quantum dot layer 10 is integrated on the light guide plate 1a without being adhered to the light guide plate 1a because the quantum dot layer 10 is fused on the light guide plate 1a by electrospinning or electrospinning.

The barrier layer 20 may be formed by electrospray or electrospinning, but it is preferable to form the barrier layer 20 by electrospray.

The barrier layer 20 may be formed by forming a fiber layer on the collector 2 or the quantum dot layer 10 by electrospinning and then using the residual solvent and heat to form the barrier layer 20 But the deterioration of the quantum dots 11 can be promoted by heat so that the barrier layer 20 is formed on the collector 2 or on the quantum dot layer 10 in the form of a non- desirable.

The barrier layer 20 may be formed of a resin solution selected from the group consisting of PC (Poly Carbonate), PMMA (poly (methylmethacrylate)) and PVDF (Polyvinylidene Fluoride) ), PMMA (poly (methylmethacrylate)), and PVDF (polyvinylidene fluoride) is electrospun or electrospun to form a barrier layer 20 in the form of a nonporous membrane.

The step S200 of forming the quantum dot layer 10 may be performed by electrospinning or electrospinning the polymer resin solution containing the quantum dot 11 on the collector 2 or the light guide plate 1a, The quantum dot layer 11 is separately formed on the collector 2 or the light guide plate 1a by spraying or dispersing the quantum dot 11 on the collector 2 or the light guide plate 1a during electrospinning or electrospinning to form the quantum dot layer 10 You may.

The polymer resin solution is preferably the same as the polymer resin solution forming the barrier layer 20. It is to be noted that the polymer resin forming the quantum dot layer 10 and the embodiment of the quantum dot 11 are omitted as the duplicated substrate described above.

Since the quantum dot layer 10 is formed by electrospinning or electrospinning, the dispersion of the quantum dots 11 is uniformly formed on the layer.

The quantum dot layer 10 is cured when it is formed on the barrier layer 20 or the light guide plate 1a when formed by the electrospinning or electrospinning and the step S200 of forming the quantum dot layer 10 It is noted that a separate heat curing process may be added to remove the residual solvent in the polymer resin.

The barrier layer 20 is cured when it is formed on the collector 2 or the quantum dot layer 10 when formed by electrospray or electrospinning and forming the barrier layer 10 S200, Discloses that a separate heat curing process may be added to remove the residual solvent in the polymer resin.

The present invention forms a quantum dot film by electrospinning or electrospinning to provide a thin film of quantum dot film to reduce the thickness of the backlight unit.

INDUSTRIAL APPLICABILITY The present invention simplifies the manufacturing process of a quantum dot film, thereby improving productivity and reducing manufacturing cost.

The present invention solves the problem of aggregation and aggregation of quantum dots 11 in a conventional quantum dot film by uniformly dispersing the quantum dots 11 in the quantum dot film to thereby efficiently emit white light according to the intrinsic characteristics of the quantum dots 11. [ So that even light can be emitted from the front of the display panel.

In particular, when the present invention is applied to a backlight unit of a large-sized display panel having a size of 40 inches or more, it is possible to uniformly illuminate the front surface of the display panel with a low manufacturing cost, thereby greatly improving the quality of the display panel.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications, and variations will be apparent to those skilled in the art in light of the above teachings. will be.

1: backlight unit 1a: light guide plate
1b: LED light source 1c: reflector
1d: Quantum dot film 2: Collector
10: Quantum dot layer 11: Quantum dot
20: barrier layer

Claims (11)

A quantum dot layer in which a plurality of quantum dots are arranged inside; And
And a barrier layer formed on the quantum dot layer and covering at least one of an upper surface and a lower surface of the quantum dot layer,
Wherein the barrier layer is integrally formed on the quantum dot layer in a fusion-bonded form. The method according to claim 1,
Wherein the barrier layer is provided on the upper surface and the lower surface of the quantum dot layer, respectively. The method according to claim 1,
Wherein the barrier layer is a polymer resin and has a non-porous form. The method according to claim 1,
The barrier layer may be made of one material selected from the group consisting of PC (Poly Carbonate), PMMA (poly (methylmethacrylate)) and PVDF (Polyvinylidene Fluoride), PC (Poly Carbonate), PMMA Wherein the quantum dot film is a mixed resin containing at least any one of them. The method according to claim 1,
Wherein the quantum dot layer is formed of a polymer resin having the same material as that of the barrier layer. The method according to claim 1,
Wherein the quantum dot layer is integrally formed on the light guide plate in a fused form. Forming a quantum dot layer in which a plurality of quantum dots are disposed inside by electrospray or electrospinning;
And forming a barrier layer covering the quantum dot layer by electrospinning or electrospinning on the quantum dot layer. 8. The method of claim 7,
Further comprising forming a barrier layer on the collector by electro-spraying or electro-spinning prior to forming the quantum dot layer, wherein forming the quantum dot layer comprises: Forming a quantum dot layer on the barrier layer formed on the quantum dot layer. 8. The method of claim 7,
Wherein the step of forming the quantum dot layer comprises forming a quantum dot layer on the light guide plate. 8. The method of claim 7,
Wherein the forming of the barrier layer comprises forming a barrier layer in the form of a nonporous film through electric spraying. 8. The method of claim 7,
Wherein the step of forming the quantum dot layer comprises forming a quantum layer by electrospinning or electrospinning a polymer resin solution containing quantum dots.

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