KR20160060198A - Display device with repair structure - Google Patents

Abstract

The present invention relates to a display device having a repair structure for enabling a bad pixel of a display panel to operate as a normal pixel. According to an aspect of the present invention, provided is the display device which comprises a display panel which is located on the same layer as a pixel electrode, which excludes a first region overlapping a data line and a gate line, and which is made of a plurality of pixel regions including a repair pattern located on a second region partially overlapping the data line.

Description

DISPLAY DEVICE WITH REPAIR STRUCTURE [0002]

The present invention relates to a display device having a repair structure.

2. Description of the Related Art [0002] As an information-oriented society develops, there have been various demands for a display device for displaying images. Recently, a liquid crystal display (LCD), a plasma display panel (PDP) Various display devices such as an organic light emitting display (OLED) device are being used. Such various display apparatuses include display panels corresponding thereto. On the other hand, in a display panel for a display device such as a liquid crystal display device or an organic light emitting display device, at least one transistor is disposed in each pixel for image display.

Since the transistors in each pixel of the display panel are manufactured through a number of processes, the transistor may not operate normally due to microscopic foreign substances in the process, and the pixels may be ignited or darkened.

Such defective pixels that are subjected to smearing or darkening have a serious adverse effect on the yield of the display panel and on the fabrication cost.

Therefore, in the related art, defective pixels that have been ignited due to microscopic foreign substances in the process have been subjected to repair processing so as not to operate as normal pixels and ignorable by the naked eye. However, when a separate structure is built in a transistor for repair, there has been a problem that parasitic capacitance occurs between the structure for repair and other components in the transistor.

Therefore, it is necessary to provide a display device including a repair structure in which parasitic capacitance does not occur.

In view of the foregoing, an object of the present invention is to provide a display device having a structure for repairing a short circuit between a gate line and a data line.

Another object of the present invention is to dispose a repair pattern on a layer on which a pixel electrode is formed to remove parasitic capacitance due to a repair pattern.

It is also an object of the present invention to provide a display device including a structure representing a repair point in order to improve the accuracy and stability of the repair process.

In order to achieve the above-mentioned object, in one aspect, the present invention provides a liquid crystal display device including a pixel electrode, a pixel electrode, and a data line, And a display panel including a plurality of pixel regions including a repair pattern to be repaired.

According to another aspect of the present invention, there is provided a display device including a display panel including a plurality of pixel regions connected to a data line and including a repair pattern that is isolated from a pixel electrode and located in the same layer as the pixel electrode.

As described above, according to the present invention, the repair pattern is disposed on the pixel electrode layer to reduce the parasitic capacitance caused by the repair pattern, thereby improving the output of the thin film transistor.

Further, since the welding point for repair can be displayed through the hole in the pigment layer or the protective layer, the accuracy of the repairing process can be improved.

In addition, since the repair pattern is disposed in a different layer from the region where the short circuit between the gate line and the data line occurs, there is an effect of improving the stability of the repair process by eliminating the possibility of newly occurring short circuit in the repair process.

Figure 1 schematically illustrates a system of a display device 100 for applying embodiments.
Figure 2 shows the repair structure in the COT structure.
Fig. 3 shows an AB cross section of 201 in Fig.
FIG. 4 illustrates a pixel region in which a repeating pattern is formed according to an embodiment of the present invention.
Fig. 5 shows a cross-section of AB of 402 in Fig.
Fig. 6 shows a position where a cut occurs between the gate line 410 and the data line 420 in the structure of Fig.
FIG. 7 shows the location of welding to repair the data line 420 in the structure of FIG.
Fig. 8 shows a case where the AB portion in Fig. 7 is cut.
FIG. 9 shows a pixel region where a repair pattern is formed according to another embodiment of the present invention.
Fig. 10 shows a structure in which no pigment is formed under a repair pattern according to another embodiment of the present invention.
11 shows a cross section of the AB region of Fig.
FIG. 12 shows a structure in which a repair pattern and a data line are connected to each other according to another embodiment of the present invention.
13 shows a cross section of the configuration of Fig.
FIG. 14 shows an open form of a repair pattern according to another embodiment of the present invention.
FIG. 15 illustrates an open form of a repair pattern according to another embodiment of the present invention.
16 shows a data line and a gate line and a repair pattern according to an embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. In the drawings, like reference numerals are used to denote like elements throughout the drawings, even if they are shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the components from other components, and the terms do not limit the nature, order, order, or number of the components. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; intervening "or that each component may be" connected, "" coupled, "or " connected" through other components.

Figure 1 schematically illustrates a system of a display device 100 for applying embodiments.

1, a display device 100 according to an embodiment of the present invention includes a plurality of data lines DL1 to DLm and a plurality of gate lines GL1 to GLn, A data driver 120 for supplying a data voltage to a plurality of data lines DL1 to DLm; a gate driver 130 for supplying a scan signal to a plurality of gate lines GL1 to GLn; A timing controller 140 for controlling the driving timings of the gate driver 120 and the gate driver 130, and the like.

The data driver 120 receives the converted video signal R'G'B 'in response to the data control signal DCS input from the timing controller 140 and the converted video signal R'G'B' (Analog pixel signal or data voltage) which is a voltage value corresponding to the gray-scale value, and supplies the data to the data line.

The gate driver 130 sequentially supplies a scan signal (a gate pulse, a scan pulse, and a gate-on signal) to the gate line in response to a gate control signal GCS input from the timing controller 140.

The display device 100 may be a liquid crystal display device (LCD), an organic light emitting display device (OLED), or the like. Regardless of the type of the display device 100, .

On the other hand, when the display apparatus 100 is a liquid crystal display (LCD), the display panel 110 is a liquid crystal display panel, which includes a transistor, a protective layer of a multilayer structure, a liquid crystal layer located between the two substrates, , A color filter, a black matrix, and a layer of photosensitive material, and the like.

When the display panel 110 is a liquid crystal display panel, the first substrate (lower substrate) may be implemented as a COT (Color Filter On TFT) structure. In this case, a black matrix and a color filter are formed on the first substrate It is possible. Here, the transistor includes a semiconductor layer, and a multi-layered protection layer for protecting the semiconductor layer may be provided.

When the display panel 110 is a liquid crystal display panel, in the manufacturing process, the height (or thickness) of a plurality of contact holes in the etching process can be lowered so that the size of the contact holes can be controlled, By using the layer as a mask, the number of masks and the number of processes can be reduced. The first substrate (lower substrate) may include a plurality of transistors formed at intersections of a plurality of gate lines (or scan lines) intersecting a plurality of data lines, a plurality of transistors A storage capacitor connected to the pixel electrode for maintaining the voltage of the liquid crystal cell, and the like.

In the case where the display panel 110 is a liquid crystal display panel, the second substrate (upper substrate) may include a black matrix, a color filter, and the like, and the pixels P may include pixel regions defined by data lines and gate lines And arranged in a matrix form. The liquid crystal cells of each of the pixels are driven by an electric field applied in accordance with a voltage difference between a data voltage applied to the pixel electrode and a common voltage applied to the common electrode to control the amount of incident light.

When the display panel 110 is a liquid crystal display panel, it may be implemented in other liquid crystal modes such as IPS (In Plane Switching) mode and FFS (Fringe Field Switching) mode. The common electrode may be a vertical electric field In the driving method, the second substrate may be formed on the first substrate together with the pixel electrode in the horizontal electric field driving method such as the IPS mode and the FFS mode.

On the other hand, one thin film transistor is formed as a source and a drain connected at the gate and the data line connected to the gate line or at the same layer as the data line. The gate line and the data line, which are located near the thin film transistor, . When the gate line and the data line are connected to each other due to damage to the insulating material between the gate line and the data line in the vertical cross state, a short circuit occurs, which affects the adjacent pixel region. Therefore, a repair structure is required to solve such a shot problem.

Figure 2 shows the repair structure in the COT structure.

Reference numeral 201 denotes a structure of a gate layer 210 in which a gate line is formed, a source / drain layer 220 in which a data line is formed, and a pixel electrode layer 230. A protective layer is formed between the gate layer 210 and the source / drain layer 220 and a protective layer for insulation is formed between the source / drain layer 220 and the pixel electrode layer 230 . Examples of the protective layer include a passivation layer, a pigment layer, a passivation layer and the like, and may be a single layer or a multilayer structure.

The gate line is connected to the gate of the thin film transistor 280, and the data line is connected to the source or drain of the thin film transistor 280. Thus, the gate line and the data line may overlap in the region of the thin film transistor 280 or in the adjacent region of the thin film transistor 280. [ The overlapped region of the source / drain layer 220 in which the data line is formed and the gate layer 210 in which the gate line is formed has a repair structure such as 290. 291 is a line for driving, and 292 and 293 are lines added for repair. The data line 220 and the gate line 210 may be disconnected from the data line 220 when the data line 220 and the gate line 210 are short-circuited at 291 to 292 so that the signal of the data line 220 may be properly applied to the thin- And 293 provide the repair function. The repair structure is an embodiment in which the source / drain layer 220, that is, the data line is formed in a double-sided pattern, and the source / drain layer 220, such as 291, 292 and 293, Is a repair structure that operates normally. On the other hand, reference numerals 291, 292, and 293 denote regions where the gate layer 210, that is, a gate line and a short can occur.

Reference numerals 202 and 203 denote only the gate layer 210 and the source / drain layer 220, not the pixel electrode layer 230 in FIG. In the IPS structure, the pixel electrode layer 230 is the same layer as the common electrode (Vcom) layer. In the process, the pixel electrode and the common electrode may be formed of one metal.

A structure 290 of FIG. 2 is constructed in which a short may occur in the region 291 of the region where the gate layer 210 and the source / drain layer 220 are overlapped. In this case, when the source / drain layer 220 on both sides of the transistor 291 is cut, the transistor 203 is formed. Due to the repair structure of the transistor 290, the source / drain 220 performs a normal operation.

In more detail, after completing the source / drain layer 220, a position of a pattern in which a short is generated (open point) is searched for and the repair is performed on the pixel. That is, a portion where a gate-drain-short (GDS) occurs is defined, and the data line of the corresponding portion 292 is subjected to layer cutting to complete the repair.

On the other hand, patterns 292 and 293 of the source / drain layer 220 for repair are overlapped with the gate layer 210 at many points as shown in FIG. 2, which causes capacitance, which is disadvantageous to the output. That is, the structure formed for repair increases the cross region where the gate layer 210 and the source / drain layer 220 overlap each other, thereby increasing the possibility of defects due to GDS.

3 shows a section A-B of 201 in Fig. A passivation layer 215 is disposed between the gate layer 210 and the source / drain layer 220 and a pigment layer 222 and a passivation layer 225 are formed between the source / drain layer 220 and the pixel electrode layer 230 Located. While the distance between gate layer 210 and source / drain layer 220 is d, where capacitance C is inversely proportional to distance d as shown in Equation 1 below. Thus, the smaller the d, the higher the capacitance between the gate layer 210 and the source / drain layer 220. Of course, the smaller the d, the higher the probability of a short circuit between the gate layer 210 and the source / drain layer 220.

[Equation 1]

The repair structure shown in FIG. 2 is a structure for repairing a metal having a mechanism for generating a defect and a mechanism for solving the same, so that the probability of failure can be increased. Also, since the passivation 215 between the gate layer 210 and the source / drain layer 220 has a thickness as low as about 2000 to 6000 ANGSTROM, the generation of capacitance necessarily occurs in the presence of an intermetal dielectric, A high capacitance may occur as shown in FIG.

Hereinafter, the present invention proposes a repair pattern for repairing a short circuit between a gate line and a data line. In addition, in the present invention, the repair target can be composed of a source / drain layer and a pixel electrode layer, thereby reducing the capacitance.

FIG. 4 illustrates a pixel region in which a repeating pattern is formed according to an embodiment of the present invention. Reference numeral 401 in FIG. 4 shows a structure in which a repair pattern is formed. Reference numeral 425 denotes an area of a thin film transistor which is connected to the data line 420 or composed of a source and a drain located on the same layer as the data line 420 and a gate connected to the gate line 410. Reference numeral 428 denotes an area where the gate line 410 and the data line 420 overlap. A short may occur between the gate line 410 and the data line 420 at 428.

Reference numeral 402 denotes a pixel electrode and a repair pattern formed on the 401. The repair pattern 440 includes a hole 445 exposing an area indicated by 401 to 428 and is formed of the same material as the pixel electrode 430 in the same layer as the pixel electrode 430. The repair pattern 440 is a structure for connecting the data line 420 to the source or the drain of the thin film transistor region 425 when a short circuit occurs in an area indicated by 428.

4, a closed curve such as a hole is shown as an embodiment for exposing the area 428. However, the present invention is not limited thereto, and any type of repair pattern that exposes the area 428 is possible. For example, in addition to the donut shape in which a hole is formed in the central portion, a curved shape or a curved shape or a broken line shape that exposes the area 428 may also be an example of a repair pattern.

Fig. 5 shows a cross section taken along line A-B of 402 in Fig. A first passivation layer 415 is located on the gate line 410, on which the data line 420 is isolated. On the data line 420, a pigment layer 421 and a second protective layer 422 are disposed. The first passivation layer 415 and the second passivation layer 422 may be a passivation layer. The distance between the layer in which the data line 420 is formed and the repair pattern 440 is larger than d in Fig. 3, ahead of d '. Therefore, capacitance is not generated, or capacitance lower than in the case of FIGS. 2 and 3 is generated. 3, the distance d that determines the capacitance due to the thickness of the passivation layer 215 is 2000 to 6000 Å. However, since the thickness d 'of the two layers 421 and 422 is 30000 to 33000 Å, A difference of 5 times and a maximum of 16 times occurs, and the capacitance that can be generated between the repair pattern and the data line can be significantly lowered. That is, the parasitic capacitance due to the repair pattern can be reduced, and the output of the thin film transistor can be improved.

Fig. 6 shows a position where a cut occurs between the gate line 410 and the data line 420 in the structure of Fig.

4, the gate line 410 and the data line 420 are overlapped with each other in the region 428 corresponding to the hole 445. In the first protective layer 415, the gate line 410 and the data line 420) can not be insulated and a short circuit may occur. In this case, portions 491 and 492 of 601 are cut so as to separate the portion where the short is generated from the thin film transistor region. In this case, the gate line 410 remains, but the data line 420 is disconnected. Since the hole 445 is located in the repair pattern 440, the data line 420 can be cut through the hole 445. [ The enlarged portion is the same as 602.

FIG. 7 shows the location of welding to repair the data line 420 in the structure of FIG.

6, when the data line 420 is cut off as shown at 602, the short-circuit problem between the gate line 410 and the data line 420 is solved, but the signal of the data line 420 is not transferred to another pixel region . In order to solve this problem, the repair pattern 440 and the data line 420 are connected to each other. The connection is welded in the area of 461 and 462 in FIG. 7 so that the data line 420 is connected to the repair pattern 440.

In summary, the repair pattern 440 is connected to the data line 420 and insulated from the pixel electrode. And the shorting portion (the portion where the shorting occurred) 628, which was connected to the data line 420 before the repair, is no longer connected to the data line 420. Therefore, even if the scan signal of the gate line 410 is applied to the shorting portion 628, the data line 420 is not affected and the operation of adjacent pixels is not affected. Also, since the repair pattern 440 is connected to the data line 420, the signal on the data line 420 is normally applied to the pixels.

Fig. 8 shows a case where the portion A-B in Fig. 7 is cut. 495 shows that the gate line 410 and the data line 420 are short-circuited. The shorted data line 420 is the shorting portion 628, and no longer the signal of the data line 420 is applied. That is, it can be seen that the data line 420 is cut in the cutting areas 491 and 492 indicated in FIG. The repair pattern 440 is connected to the data line 420 in the regions 461 and 462 for welding so that the signal of the data line 420 can be applied to the adjacent pixels.

FIG. 9 shows a pixel region where a repair pattern is formed according to another embodiment of the present invention. 4, the connection pattern 910 is located between the repair pattern 440 and the pixel electrode 430. [ The repair pattern 440 may be connected to the pixel electrode 430 or may be connected to a common electrode formed in the same layer as the pixel electrode. When a defect occurs, the connection pattern is cut, and the shorted data line is cut, and each cut line becomes 991, 491, and 492. The welding process is applied to the two areas where the repair pattern 440 and the data line 420 are overlapped to connect the repair pattern and the data line. If the connection pattern is cut off, it is equal to 905. 910 < / RTI > connection pattern is cut in the area indicated by 920.

The repair pattern in FIG. 9 may be connected to a common electrode other than the pixel electrode. In the IPS structure, the pixel electrode and the common electrode are formed on the same layer with the same material. In this process, the repair pattern may be formed in connection with any one of the pixel electrode and the common electrode. When the repair pattern is connected to the common electrode or the pixel electrode, since the function of transmitting the signal of the common electrode or the signal of the pixel electrode before the repair is performed is provided, even when the repair pattern is not repaired, Lt; / RTI >

6 to 8, the repairing process is also performed and the connection pattern 910 is also cut to insulate the repair pattern 440 from the pixel electrode 430. In other words, Reference numeral 991 denotes a position where the connection pattern 910 is cut.

Fig. 10 shows a structure in which no pigment is formed under a repair pattern according to another embodiment of the present invention. Since the pigment is not formed, the space to be welded can be easily grasped in the repair process.

4, the repair layer 440 and the data line 420 are overlapped with each other. In a region where the pigment layer is not formed as shown in 1011 and 1012, the repair pattern 440 is removed from the camera during the repair process, It is possible to accurately recognize the welding spot on the workpiece. In other words, it is possible to accurately identify the point for repair, and eliminates the possibility of a separate shot in the repair process, thereby providing a stable repair structure.

11 shows a cross section of the region A-B in Fig. 1101 shows a state in which the pigment layer 1110 is not formed in 1011 and 1012 previously. Reference numeral 1102 denotes a repaired state when a short circuit occurs between the data line 420 and the gate line 410 in the structure 1101. FIG. The data line 420 in which a short-circuited is generated as shown in 1192 is cut off. That is, the shorting unit 628, which was connected to the data line 420 before the repair, is no longer connected to the data line 420. Therefore, even if the scan signal of the gate line 410 is applied to the shorting portion 628, the data line 420 is not affected and the operation of adjacent pixels is not affected. Welding is performed in the regions 1011 and 1012 where no pigment is formed, and the repair pattern 440 and the data line 420 are connected.

FIG. 12 shows a structure in which a repair pattern and a data line are connected to each other according to another embodiment of the present invention. The repair pattern 1340 is connected to the data line 420. The repair pattern 1340 remains connected to the data line 420 if no short circuit occurs on the data line 420 and the gate line 410. [ The repair pattern 1340 and the data line 420 remain connected through the holes 1351 and 1352. [

13 shows a cross section of the configuration of Fig. 1301 is a configuration before the repair process is applied. As described above, the repair pattern 1340 is connected to the data line 420. Reference numeral 1302 denotes a structure after the repair process is applied. When a short circuit occurs between the gate line 410 and the data line 420 at 1392, portions 491 and 492 are cut off.

12, when the repair pattern 1340 is connected to the data line 420 regardless of the presence or absence of the repair process, only the data line 420 can be cut without performing a separate welding operation in the repair process, Can be simplified. That is, holes 1351 and 1352 are formed in the pigment layer 1310 and the protective layer 1320 using a mask or the like, and then a pixel electrode layer is deposited, and a repair pattern is formed on the data lines 420 ), And if repair is required afterward, the repairing process can be reduced by performing only the cutting process as in 1302.

According to the embodiment of the present invention as described above, a repair pattern for repairing a short circuit occurring in the overlapping area of the gate line and the data line is not formed in the gate line layer or the data line layer, Change it. For this purpose, it is possible to design a pattern for repair in the pixel electrode layer of the uppermost layer, and according to an embodiment, the repair pattern can be designed to float with the pixel electrode, and according to another embodiment, It can be designed to be connected to the electrode. Since the repair pattern is formed in the pixel electrode layer, the distance between the repair pattern and the data line can be increased to prevent the occurrence of unnecessary capacitance. In addition, the distance between the data line layer and the pixel electrode layer increases, and the short circuit problem caused by the repair pattern can be solved. The repair pattern is a configuration in which, when a short-circuit occurs between the gate line and the data line, the overlapping space is left empty for laser-cutting the data line. Of course, it is not necessarily a form of a hole, but a part of it may be an open form.

FIG. 14 shows an open form of a repair pattern according to another embodiment of the present invention. In the repair pattern, a hole was formed on the overlapped region between the gate line and the data line. However, the present invention is not necessarily limited to the holes. Unlike the repair pattern 440 of FIG. 4, the repair pattern 1440 is formed in the shape of an opened curve (open curve) .

FIG. 15 illustrates an open form of a repair pattern according to another embodiment of the present invention. Unlike the repair pattern 440 in FIG. 4, the repair pattern 1540 may be formed in the shape of a curve (open curve) of a reverse "C" In addition, various embodiments of the repair pattern are shown in FIG.

16 shows a data line and a gate line and a repair pattern according to an embodiment of the present invention.

Reference numeral 1601 denotes an embodiment in which the repair pattern 1640a is not located in a region where the data line 1620a and the gate line 1610a are overlapped and is in the form of a broken line. Reference numeral 1602 denotes an embodiment in which the repair pattern 1640b is not located in a region where the data line 1620b and the gate line 1610b overlap, and is in the form of a straight line. Whereas the data line 1620b is in the form of a broken line.

The repair pattern is formed with the overlapping area between the gate line and the data line being left empty, so that the repairing process can be easily performed during the repair process. In addition, a repair pattern can be formed in various forms so that the repair point can be identified.

In addition, the repair pattern must be formed so as to overlap with the data lines so that welding for repair can be performed. Thus, the repair pattern overlaps the data line at two points.

In the case of applying the above-described repair pattern configuration, when a short circuit occurs between the gate line and the data line, the data line is cut in the corresponding area, and the repair process of reconnecting the data line using the repair pattern can be performed. In this process, a welding process for connecting the repair pattern and the data line and a cutting process for insulating the data line from the shorted portion may be further included. It is also possible to form a repair pattern in which a repair pattern is connected to a data line in advance, and only a cutting process in which a data line is insulated from a shorted portion in the event of shorting can be applied. This is shown in FIGS. 12 and 13.

Hereinafter, in the embodiment of the present invention, a repair pattern is arranged only in an area in which a defect occurs, for example, an area where a data line and a gate line cross each other. The repair pattern can be formed on the same layer as the pixel electrode layer by using the same material (ITO, IGZO, IZO, etc.) as the pixel electrode layer. Since the repair pattern is formed in the pixel electrode layer, it is formed in a region separate from the gate line-data line where a short-circuit occurs. Therefore, the region where the shot is solved and the region where the shot is generated are separated from each other, so that the possibility of failure can be reduced. Also, the distance between the repair pattern and the data line reduces the capacitance caused by the repair pattern. In addition, holes can be formed on the pigment layer 421 or the protective layer 422 in order to easily perform repair in the repair pattern, so that the camera can accurately recognize the point when performing a cutting or welding process. As a result, the accuracy of the repair process can be improved.

When the present invention is applied, a repair pattern is formed on the pixel electrode layer in order to repair a short circuit in a region where a gate line for transferring a gate signal and a data signal for transferring a data signal overlap. (Passivation layer) and the pigment layer are located between the layer where the source-drain is formed (the data line layer) and the pixel electrode, and the distance between the layer where the data line is formed and the layer where the pixel electrode is formed is between the gate line and the data line The parasitic capacitance can be removed. The repair pattern can leave the area where the cutting will occur and the cutting will proceed. This can be in the form of a hole as described above, or the repair pattern itself can have various shapes such as a closed curve or an open curve.

In addition, after cutting the shorted portion, the repair pattern and the data line can be connected regardless of the occurrence of the shorting to connect the repair pattern and the data line again. For this purpose, a hole may be formed in the protective layer and the pigment layer to connect the data line and the repair pattern. In one embodiment, the repair pattern may be connected to the data line through the CVD deposition process. On the other hand, the repair pattern can be designed to float or to receive the Vcom signal.

According to the present invention, there is an effect of providing a display device (100) having a repair pattern that repairs a short circuit between a data line and a gate line in the display panel (110).

According to the present invention, there is provided a display panel comprising a pixel region including a repair pattern. In the repair pattern, the pixel region of the display panel / display device shipped without a repair process is located on the same layer as the pixel electrode, and the second region excluding the first region in which the data line and the gate line overlap, As shown in FIG. On the other hand, in the pixel region in which the repair process is performed, a shorting portion positioned in the same layer as the data line and insulated from the source or the drain is formed. The repairing portion, which is connected to the data line and isolated from the pixel electrode, . Depending on the display panel, some pixel areas have a repair pattern that has undergone a repair process, and another pixel area has a repair pattern that does not include a repair process.

If there is a connection pattern in the repair pattern, after the repair process, the connection pattern exists in a cut form.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. , Separation, substitution, and alteration of the invention will be apparent to those skilled in the art. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: display device
110: Display panel
120: Data driver
130: Gate driver
140: Timing controller
440, 1440, 1540, 1640a, 1640b: repair pattern

Claims (10)

A thin film transistor having a gate connected to a gate line and a source and a drain connected to a data line insulated from the gate line or located on the same layer as the data line;
A pixel electrode connected to the source or the drain,
A plurality of pixel regions including a repair pattern located on a same layer as the pixel electrode and located on a second region excluding a first region overlapping the data line and the gate line and partially overlapping the data line, A display panel configured;
A data driver for supplying a data voltage to the data line; And
And a gate driver for supplying a scan signal to the gate line.
The method according to claim 1,
Wherein the repair pattern is connected to the common electrode formed on the same layer as the pixel electrode or the pixel electrode in a connection pattern.
The method according to claim 1,
A first protective layer is located between the gate line and the data line,
A pigment layer and a second protective layer are disposed between the data line and the repair pattern,
Wherein a thickness of the second protective layer and a thickness of the pigment layer are larger than a thickness of the first protective layer.
The method of claim 3,
And a hole is located in the pigment layer under the repair pattern.
5. The method of claim 4,
The hole exposing the data line;
And the repair pattern is connected to the data line through the hole.
The method according to claim 1,
Wherein the repair pattern is in the form of a closed curve surrounding the first region or in an open curve in the second region.
The method according to claim 1,
And the repair pattern overlaps the data line on the second region.
A thin film transistor having a gate connected to a gate line and a source and a drain connected to a data line insulated from the gate line or located on the same layer as the data line;
A pixel electrode connected to the source or the drain,
A shorting part located in the same layer as the data line and insulated from the source or the drain,
And a plurality of pixel regions connected to the data lines, the pixel regions being insulated from the pixel electrodes and including a repair pattern located on the same layer as the pixel electrodes;
A data driver for supplying a data voltage to the data line; And
And a gate driver for supplying a scan signal to the gate line.
9. The method of claim 8,
And a connection pattern cut between the repair pattern and the pixel electrode is positioned.
9. The method of claim 8,
A first protective layer is located between the gate line and the data line,
A pigment layer and a second protective layer are disposed between the data line and the repair pattern,
A hole in the pigment layer under the repair pattern and the second protective layer,
And the repair pattern is connected to the data line through the hole.

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