KR20160059766A - Sensor package and manufacturing method thereof - Google Patents

Sensor package and manufacturing method thereof Download PDF

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Publication number
KR20160059766A
KR20160059766A KR1020140161714A KR20140161714A KR20160059766A KR 20160059766 A KR20160059766 A KR 20160059766A KR 1020140161714 A KR1020140161714 A KR 1020140161714A KR 20140161714 A KR20140161714 A KR 20140161714A KR 20160059766 A KR20160059766 A KR 20160059766A
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KR
South Korea
Prior art keywords
thin film
film layer
mass
cap
buffer member
Prior art date
Application number
KR1020140161714A
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Korean (ko)
Inventor
양정승
김종운
송종형
김태윤
Original Assignee
삼성전기주식회사
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Priority to KR1020140161714A priority Critical patent/KR20160059766A/en
Publication of KR20160059766A publication Critical patent/KR20160059766A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5705—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis
    • G01C19/5712—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0845—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration using a plurality of spring-mass systems being arranged on one common planar substrate, the systems not being mechanically coupled and the sensitive direction of each system being different

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

The present invention relates to a sensor package capable of minimizing internal mass or cap damage due to an external impact or the like, and a manufacturing method thereof. A sensor package according to an embodiment of the present invention includes a base having a mass disposed in a space formed therein and a plurality of connection portions connecting the mass and a base member coupled to one side of the base to protect the mass, The cap may include at least one buffer member formed on an inner wall facing the mass body.

Description

[0001] SENSOR PACKAGE AND MANUFACTURING METHOD THEREOF [0002]

The present invention relates to a sensor package having a MEMS sensor and a method of manufacturing the same.

Acceleration sensors are widely used in a variety of industrial fields such as automobiles, robots, and various precision instruments. Recently, the demand for semiconductor acceleration sensors using MEMS (Micro Electro Mechanical System) technology is rapidly increasing.

The semiconductor acceleration sensor generally has a structure in which a mass body constituting a sensor portion is housed in a space inside a package made of ceramic. Further, in order to protect the mass body, a cap is used to seal the storage space.

Due to such a structure, when the semiconductor acceleration sensor is dropped, the masses collide with the inner surface of the cap due to the movement of the masses, and the masses and the caps are damaged.

United States Patent No. 7331230

SUMMARY OF THE INVENTION An object of the present invention is to provide a sensor package and a method of manufacturing the same that can minimize the damage of internal mass or cap due to an external impact or the like.

A sensor package according to an embodiment of the present invention includes a base having a mass disposed in a space formed therein and a plurality of connection portions connecting the mass and at least one cap coupled to one side of the base to protect the mass, And the cap may include at least one buffer member formed on an inner wall facing the mass body.

According to another aspect of the present invention, there is provided a method of manufacturing a sensor package, comprising: preparing a base having a mass disposed in a space formed therein and a plurality of connecting portions connecting the mass, , And bonding at least one cap to the base.

In the sensor package according to the embodiment of the present invention, when the sensor package is excessively impacted and the mass is excessively moved, the shock due to the movement of the mass body can be absorbed by the buffer member formed on the cap. Therefore, it is possible to prevent the mass or the connecting portion from colliding with the cap or the like and thus to improve the falling reliability.

1 is a cross-sectional view schematically showing a sensor package according to an embodiment of the present invention;
2 is an exploded perspective view of the sensor package shown in Fig.
3 is a bottom view of the upper cap shown in Fig.
4A and 4B are cross-sectional views schematically showing a state in which a mass is moved;
5 to 7 are views for explaining a method of manufacturing a sensor package according to the present embodiment.
8 to 10 are views for explaining a method of manufacturing a cap according to the present embodiment.
11 is a cross-sectional view schematically showing a sensor package according to another embodiment of the present invention.
12 is a cross-sectional view schematically showing a state in which two buffer members act in FIG. 11;
13 to 15 are views for explaining a method of manufacturing the cap shown in Fig.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. In addition, the shape and size of elements in the figures may be exaggerated for clarity.

FIG. 1 is a cross-sectional view schematically showing a sensor package according to an embodiment of the present invention, FIG. 2 is an exploded perspective view of the sensor package shown in FIG. 1, and FIG. 3 is a bottom view of the upper cap shown in FIG.

1 to 3, the sensor package 100 according to the present embodiment may be an acceleration sensor package that can be manufactured through a MEMS (Micro Electro Mechanical System) process. Thus, it is formed on the basis of a semiconductor substrate such as a wafer.

The sensor package 100 according to the present embodiment includes a base 10 and a mass body 11 installed in the internal space 13 of the base 10. [ The mass (11) and the base (10) are connected by at least one connecting part (12).

The connection portion 12 has a one end connected to the mass body 11 and the other end connected to the base 10 and acts as a spring against the mass body 11 vibrating in proportion to the acceleration due to the external force.

At least one electrode 15 and a wiring pattern 17 may be formed on the upper surface of the base 10.

The electrode 15 may be formed on one side of the upper surface of the base 10 and may be disposed as far as possible from the internal space 13.

The wiring pattern 17 forms a circuit on the base 10 and can be electrically connected to the electrode 15. [ The formation position of the wiring pattern 17 is not limited to the upper surface of the base 10 and may be formed at various positions as required.

Caps 20 and 30 in the form of a cover can be coupled to the upper and lower portions of the base 10 to seal the inner space 13 of the base 10, respectively. The caps 20 and 30 are bonded to at least one side of the base 10 to protect the mass body 11 disposed in the base 10 from the outside and seal the internal space 13 in which the mass body 11 is disposed.

The lower cap 20 is coupled to the lower surface of the base 11 and the upper cap 30 is coupled to the upper surface of the base 11. Here, when the inner space 13 of the base 10 is formed in the shape of a groove rather than a through hole, the lower cap 20 may be omitted.

The upper cap 30 may be formed to cover the upper surface of the base 10 other than the portion where the electrode 15 is formed so that the electrode 15 is exposed to the outside. However, when the electrode 15 is formed on the other surface of the base 10 rather than the upper surface, the upper cap 30 may be formed to cover the entire upper surface of the base 10.

The base 10, the upper cap 30 and the lower cap 20 according to the present embodiment may be formed of the same material. For example, a silicon material. However, the present invention is not limited thereto.

The caps 20, 30 and the base 10 are bonded to each other by the spacer 40. Further, the spacer can be bonded to the caps 20, 30 and the base 10 via a joining member (not shown). It is also possible for the spacer 40 to function as a joining member.

The spacer 40 may be formed of a metal material or a resin material. The spacers 40 separate the caps 20 and 30 from the base 10 by a certain distance, and a space is provided in which the masses can protrude.

Also, the cap 20, 30 according to the present embodiment has at least one buffer member 60.

The buffer member 60 may be formed on both sides of the upper and lower caps 30 and 20 and may be formed on only one side as in the present embodiment.

The buffer member 60 may be formed in a region where the inner space 13 of the base 10 is closed and more specifically may be disposed on the upper portion or the lower portion of the mass body 11. [

The buffer member 60 according to the present embodiment may be formed in the form of a leaf spring. The cushioning member 60 is formed in the form of a long and flat rod so that both ends are connected to the cap 30 and a space 65 in which the cushioning member 60 can be bent is provided on the back surface of the cushioning member 60.

Here, the space 65 formed on the back surface of the buffer member 60 may be formed corresponding to the elastic force of the buffer member 60. For example, when the thickness of the cushioning member 60 is small and the degree of bending is small, the space 65 may be small, and when the cushioning member 60 is thin and bulky, Can be largely formed.

Also, a plurality of buffer members 60 are disposed corresponding to the positions of the mass body 11 and the connecting portion 12. [ Figs. 4A and 4B are cross-sectional views schematically showing a state where the masses are moved, Fig. 4A being a cross section taken along line A-A of Fig. 2, and Fig. 4B being a cross section along B-B of Fig.

The cushioning member 60 is disposed at a position where the mass body 11 or the connecting portion 12 protrudes outward from the upper surface (or lower surface) of the base 10 due to shaking of the mass body 11.

Therefore, when the mass body 11 or the connecting portion 12 protrudes outward from the upper surface (or lower surface) of the base 10, the buffer member 60 comes into contact with the protruding portion and provides an elastic force to relieve the impact.

The sensor package 100 according to the present embodiment can protrude both the connecting portion 12 and the mass body 11 to the upper portion of the base 10 in accordance with the movement of the mass body 11. [

For example, referring to FIGS. 2 and 4A, when the edge portion of the mass body 11 connected to the connection portion 12 moves upward, the connection portion 12 is positioned at the uppermost position as shown in FIG. 4A. In this case, the buffer member 60 comes into contact with the connection portion 12.

Similarly, when the edge portion of the mass body 11 that is not connected to the connection portion 12 moves upward, the edge of the mass body 11 is positioned at the uppermost position as shown in FIG. 4B. In this case, the buffer member 60 comes into contact with the mass body 11. Thus, the buffer member 60 according to the present embodiment can be disposed along the edge or the connecting portion 12 of the mass body 11. [

On the other hand, the configuration of the present invention is not limited to the above configuration. For example, the connection portion 12 can be connected to the mass body 11 at various positions as required. Therefore, depending on the structure of the sensor package 100, it is also possible that only the mass body 11 protrudes or only the connecting portion 12 protrudes when the mass body 11 rotates,

 Thus, the buffering member 60 can be disposed at an arbitrary position corresponding to all the elements that can protrude outward from the base 10.

The sensor package 100 according to the present embodiment configured as described above transmits an electrical signal to the outside through the electrode according to a change in the resistance value generated when the mass body 11 vibrates in proportion to the acceleration of the external force, (For example, a signal processing apparatus) detects the magnitude of the acceleration corresponding to the external force based on the electrical signal.

When the sensor package 100 is excessively impacted by the drop of the sensor package 100 and the mass 11 is excessively moved, the mass of the mass body 11 passes through the buffer member 60 formed on the cap 20, It is possible to absorb the shock caused by the movement. Therefore, it is possible to prevent the mass body 11 and the connecting portion 12 from colliding against the caps 20 and 30 and the like, thereby improving dropping reliability.

Next, a manufacturing method of the sensor package 100 according to the present embodiment will be described.

5 to 7 are views for explaining a method of manufacturing a sensor package according to the present embodiment.

The manufacturing method of the sensor package 100 according to the present embodiment uses a semiconductor process (for example, a MEMS process). Accordingly, a plurality of pieces can be uniformly manufactured in the wafer state, and the individual sensor packages 100 can be formed by cutting the wafer after the fabrication is completed. However, the present invention is not limited thereto.

First, referring to FIG. 5, a base 10 in which a mass body 11 is disposed in an inner space 13 is prepared. At this time, the mass body (11) is connected to the base (10) by the connecting portion (12).

Such a base 10 can prepare a semiconductor substrate such as a wafer and partly etch the inside of the wafer to form the internal space 13, the mass body 11, the connecting body 12, and the like.

Subsequently, the lower cap 20 is joined to the lower portion of the base 10 as shown in FIG. At this time, a spacer 40 may be interposed between the base 10 and the lower cap 20. By the spacer 40, the space 13 around the mass body 11 can be expanded. On the other hand, although not shown, at least one buffer member may be formed in the lower cap 20 as needed.

Then, the upper cap 30 is attached to the base 10 as shown in Fig. Thus, the sensor package 100 according to the present embodiment shown in Fig. 1 is completed.

The upper cap 30 is also bonded to the base 10 via the spacer 40. The upper cap 30 also has at least one cushioning member 60 and is coupled to the base such that the cushioning member 60 faces the mass 11.

Next, a method of manufacturing the upper cap (or the lower cap) according to the embodiment of the present invention will be described.

8 to 10 are views for explaining a method of manufacturing a cap according to the present embodiment.

Referring to FIG. 8, a first thin film layer 32 is formed on a first substrate 31 and a second thin film layer 33 is formed on a first thin film layer 32.

Here, the first substrate 31 may be a silicon substrate. The first thin film layer 32 may be formed of silica (SiO 2 ) and may be formed on the first substrate 31 through a plasma enhanced CVD (PECVD) method. The second thin film layer 33 may be formed of poly-Si.

9, a groove 65 is formed through one surface of the cap 30 to form the shape of the buffer member 60. [ do. Here, the groove may be formed by dry etching, and a process of forming a mask (not shown) on the second thin film layer 33 may be additionally performed.

Then, as shown in Fig. 10, the first thin film layer 32 disposed around the groove is partially removed. In this process, the first thin film layer 32 supporting the lower portion of the buffer member 60 is also removed. A space 65 in which the buffer member 60 can bend is provided on the back surface of the buffer member 60 and the cap 20 having the buffer member 60 can be completed.

In this step, the first thin film layer 32 may be removed by wet etching, and specifically, isotropic etching using XeF 2 or the like may be used.

The present invention is not limited to the above-described embodiments, and various modifications are possible.

FIG. 11 is a cross-sectional view schematically showing a sensor package according to another embodiment of the present invention, and FIG. 12 is a cross-sectional view schematically showing a state in which two buffer members act in FIG.

The present embodiment is configured similar to the sensor package (100 in Fig. 1) of the above-described embodiment, and has a difference only in the structure of the buffer member. Therefore, the description of the configuration similar to that of the above-described embodiment will be omitted, and only the differences will be described in detail.

11, in the sensor package 200 according to the present embodiment, the buffer member 60 is formed in two stages. More specifically, each of the buffer members 60 according to the present embodiment is formed in such a manner that two of them are stacked.

The cushioning member 60 according to the present embodiment can be divided into a first cushioning member 60a disposed adjacent to the mass body 11 and a second cushioning member 60b disposed on the rear surface thereof.

The second buffering member 60b may be implemented in the same manner as the first buffering member 60a. Further, the second buffer member 60b can be disposed in the region where the first buffer member 60a is bent. Therefore, when the first cushioning member 60a is bent, the first cushioning member 60a can contact the second cushioning member 60b and transmit the force to the second cushioning member 60b.

12, the impact transmitted from the mass body 11 or the connecting portion 12 is transmitted to the first cushioning member 60a and the second cushioning member 60b ). ≪ / RTI >

When the buffer members 60 are stacked in a plurality of layers, the shock can be absorbed more effectively than when only one buffer member 60 is used.

In the case of using only one cushioning member (60 in Fig. 1) as in the above-described embodiment, the impact is absorbed only through one cushioning member (60).

The cushioning member 60 may collide with the inner wall of the cap 20 on the rear surface when the impact is larger than the elastic force of the cushioning member 60. In this case, .

However, in the case of this embodiment, as shown in Fig. 12, the second buffer member 60b supports the first buffer member 60a to provide an elastic force in a double direction, so that it is possible to provide a larger elastic force than the above case . In addition, when an excessive impact is applied from the mass body 11, the impact can be relieved primarily through the first cushioning member 60a and secondarily relaxed through the second cushioning member 60, The impact amount can be minimized.

In addition, since the elastic force of the second cushioning member 60 is generated in a state where the first cushioning member 60 is bent to some extent, the elastic force can be non-linearly applied, so that a soft cushioning is possible.

In the present embodiment, the second buffer members 60b are arranged in the same direction and in the same direction as the first buffer members 60a. However, the present invention is not limited thereto.

For example, the second buffer member 60b may be formed to be shorter or longer than the first buffer member 60a, and may be formed thicker or thinner than the first buffer member 60a.

Further, the second buffer member 60b may be arranged to be perpendicular to the first buffer member 60a. In this case, the second buffering members 60b may be formed to cross each other at the center of the first buffering member 60a.

Next, a method of manufacturing the cap shown in Fig. 11 will be described.

13 to 15 are views for explaining a method of manufacturing a cap according to the present embodiment.

Referring to FIG. 13, a first thin film layer 32 is formed on a first substrate 31, and a second thin film layer 33 is formed on a first thin film layer 32. Next, a third thin film layer 34 is formed on the second thin film layer 33, and a fourth thin film layer 35 is formed on the third thin film layer 34

As in the above-described embodiment, the first substrate 31 may be a silicon substrate. The first and third thin film layers 32 and 34 may be formed of silica (SiO 2 ) or plasma enhanced CVD (PECVD). The second and fourth thin film layers 33 and 35 may be formed of poly-Si.

Then, as shown in Fig. 14, a groove 65 is formed on the side surface of the buffer member 60. As shown in Fig. The grooves 65 according to the present embodiment are formed so as to penetrate all of the first to fourth thin film layers 32 to 35. The first and second buffer members 60a and 60b are formed on the second and fourth thin film layers 33 and 35, respectively.

The grooves 65 may be formed by dry etching, and a process of forming a mask (not shown) on the fourth thin film layer 35 may be additionally performed.

Next, as shown in FIG. 15, the first and third thin film layers 32 and 34 disposed around the groove 65 are partially removed to complete the cap 30 according to the present embodiment. The first and third thin film layers 32 and 34 supporting the first and second buffer members 60a and 60b are removed and buffer members 60a and 60b are formed on the back surfaces of the buffer members 60a and 60b A space that can be bent is provided.

In this step, the first and third thin film layers 32 and 34 may be removed by wet etching. Specifically, isotropic etching using XeF 2 or the like may be used.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. And will be apparent to those skilled in the art.

100, 200: Sensor package
10: Base
20: Lower cap
30: upper cap
40: Spacer
60: buffer member

Claims (18)

A mass disposed in a space formed inside the base, and a plurality of connecting portions connecting the mass; And
At least one cap coupled to one side of the base to protect the mass;
/ RTI >
Wherein the cap has at least one cushioning member formed on an inner wall facing the mass body.
The cushioning member according to claim 1,
A sensor package formed in the form of a flat leaf spring.
3. The apparatus of claim 2,
And a space in which the buffer member can bend is formed on the back surface of the buffer member.
The cushioning member according to claim 2,
And a sensor package disposed along the edge or the connection portion of the mass body.
2. The cushioning member according to claim 1,
Wherein a plurality of sensor packages are stacked.
2. The cushioning member according to claim 1,
A first cushioning member disposed adjacent to the mass body; and a second cushioning member spaced apart from and stacked on the first cushioning member.
2. The cap according to claim 1,
A first substrate;
A first thin film layer formed on one surface of the first substrate; And
A second thin film layer formed on the first thin film layer;
/ RTI >
And the buffer member is formed on the second thin film layer.
8. The cap according to claim 7,
Wherein the first thin film layer is partially removed to form a space in which the buffer member can be bent.
8. The method of claim 7,
Wherein the first substrate is a silicon substrate, the first thin film layer is formed of silica (SiO 2), and the second thin film layer is formed of poly-Si.
2. The cap according to claim 1,
A first substrate;
A first thin film layer formed on one surface of the first substrate;
A second thin film layer formed on the first thin film layer;
A third thin film layer formed on the second thin film layer; And
A fourth thin film layer formed on the third thin film layer;
/ RTI >
Wherein the buffer member includes a first buffer member formed on the fourth thin film layer and a second buffer member formed on the second thin film layer.
Preparing a mass having a mass disposed in a space formed therein and a plurality of connecting portions connecting the mass;
Preparing a cap having at least one buffer member on one surface thereof; And
Bonding at least one cap to the base;
≪ / RTI >
12. The method of claim 11, wherein preparing the cap comprises:
Forming a first thin film layer on one side of the first substrate;
Forming a second thin film layer on the first thin film layer;
Forming a plurality of grooves through the first thin film layer and the second thin film layer to form the buffer member; And
Removing the first thin film layer disposed under the buffer member;
≪ / RTI >
13. The method of claim 12, wherein forming the first thin film layer comprises:
And forming a first thin film layer made of silica (SiO2) on the first substrate through a plasma enhanced chemical vapor deposition (PECVD) method.
14. The method of claim 13, wherein forming the second thin film layer comprises:
And forming the first thin film layer with polysilicon.
14. The method of claim 13,
Wherein the plurality of grooves are formed through dry etching, and the first thin film layer is removed by wet etching.
12. The method of claim 11, wherein preparing the cap comprises:
Forming a first thin film layer on one side of the first substrate;
Forming a second thin film layer on the first thin film layer;
Forming a third thin film layer on the second thin film layer;
Forming a fourth thin film layer on the third thin film layer;
Forming a plurality of grooves through the first to fourth thin film layers to form the buffer member; And
Removing the first thin film layer and the third thin film layer disposed under the buffer member;
≪ / RTI >
17. The method of claim 16,
Wherein the plurality of grooves are formed by dry etching, and the first thin film layer and the third thin film layer are removed by wet etching.
A mass disposed in a space formed inside the base, and a plurality of connecting portions connecting the mass; And
At least one cap coupled to the base to protect the mass from the outside;
/ RTI >
The cap includes a first cushion member disposed to face the mass body, a first cushion member spaced a predetermined distance from the first cushion member and disposed in a laminated manner to contact the first cushion member when the first cushion member is bent, And a second buffer member for supporting the buffer member.
KR1020140161714A 2014-11-19 2014-11-19 Sensor package and manufacturing method thereof KR20160059766A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020211922A1 (en) 2020-09-23 2022-03-24 Robert Bosch Gesellschaft mit beschränkter Haftung Micromechanical structure and micromechanical sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020211922A1 (en) 2020-09-23 2022-03-24 Robert Bosch Gesellschaft mit beschränkter Haftung Micromechanical structure and micromechanical sensor
US11860184B2 (en) 2020-09-23 2024-01-02 Robert Bosch Gmbh Micromechanical structure and micromechanical sensor

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