KR20160059702A

KR20160059702A - Manufacturing method of substrate graphene growth without using metal catalyst and substrate graphene growth without using metal catalyst and manufacturing device

Info

Publication number: KR20160059702A
Application number: KR1020140161523A
Authority: KR
Inventors: 이윤택
Original assignee: 이윤택
Priority date: 2014-11-19
Filing date: 2014-11-19
Publication date: 2016-05-27

Abstract

Provided are a manufacturing method of catalyst-free substrate grown graphene, catalyst-free substrate grown graphene, and an electronic part comprising the same. The manufacturing method of catalyst-free substrate grown graphene comprises the following steps: a. arranging a substrate; b. supplying carbon-containing gas and performing low-pressure chemical vapor deposition (LPCVD); and c. growing graphene on the substrate without including a catalyst layer through Van der Waals type heteroepitaxial growth.

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a graphene substrate without graphene growth, and a method for manufacturing graphene without using a metal catalyst and manufacturing device,

TECHNICAL FIELD The present invention relates to a method for producing an uncatalyzed substrate-grown graphene, an uncatalyzed substrate-grown graphene, and an electronic component including the same.

The present invention also relates to an apparatus for manufacturing a non-catalyst substrate growth graphene.

Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports electrons 100 times faster than silicon.

In addition, a growth method using a catalyst layer is mainly used as a method of growing graphene.

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for producing graphene directly on the surface of a substrate without using a catalyst metal on the substrate.

SUMMARY OF THE INVENTION The present invention has been devised to solve the problems as described above, and it is an object of the present invention to provide a method for manufacturing a non-catalyst substrate-grown graphene, a non-catalyst substrate-grown graphene and an electronic component including the same.

It is another object of the present invention to provide an apparatus for producing a growth substrate of a non-catalyst substrate by solving the above problems.

Therefore, in order to solve the problem described in the above, the present invention requires a technique for manufacturing graphene directly contacting the surface of the substrate without using a catalytic metal on the substrate. Further, a technique for manufacturing a graphene of a single crystal as large as possible was required. For that reason,

a. With the substrate thereafter,

b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,

c. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; And a method for producing the graphene grains is disclosed.

Further, according to the present invention,

a. With the substrate thereafter,

c. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. To do; And a method for producing the graphene grains is disclosed.

The present invention also provides a method for producing graphene grown on a non-catalyst substrate.

In addition,

With non-catalytic substrate growth graphene,

Wherein the noncatalytic substrate growth graphene directly contacts the surface of the substrate,

The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,

The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; The present invention relates to a non-catalytic substrate growth graphene.

In addition,

With non-catalytic substrate growth graphene,

The non-catalytic substrate growth graphene directly contacts the surface of the substrate,

Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,

The non-catalytic substrate growth graphene has a grain boundary along a second direction parallel to the surface,

The corresponding noncatalytic substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; The present invention relates to a non-catalytic substrate growth graphene.

In addition,

With non-catalytic substrate growth graphene,

The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,

The non-catalyst substrate-grown graphene has a plurality of grain boundaries along a second direction parallel to the surface,

The corresponding noncatalytic substrate growth graphene is a single crystal in each of the regions surrounded by the grain boundaries; The present invention relates to a non-catalytic substrate growth graphene.

In addition,

A gas supply unit for supplying a carbon-containing gas;

A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;

A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And

A heating device arranged to heat a region of the substrate having a substrate layer in contact with the ejected carbon-containing gas; To

The present invention also provides an apparatus for manufacturing a non-catalytic substrate growth graphene.

The present invention provides a method for producing graphene on a non-catalyst substrate by growing graphene on a substrate.

The present invention also provides a non-catalyst substrate grown graphene.

The present invention also provides a method for producing a non-catalyst substrate-grown graphene, a non-catalyst substrate-grown graphene, and an electronic component including the same.

Further, the present invention provides an apparatus for producing a non-catalyst substrate grown graphene.

1
1,
(One). With the substrate thereafter,
(2). A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
(3-4). In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on the substrate,
(1) to (3) to (4), wherein the non-catalyst-substrate-grown graphene is composed of a graphene grains.
1,
(One). With the substrate thereafter,
(2). A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
(3-4). Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. ,
(1) to (3) to (4), wherein the non-catalyst-substrate-grown graphene is composed of a graphene grains.
2A,
The description of FIG. 2A is explained with (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the substrate layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.
(2). The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; Characterized in that the method comprises the steps of:
2B
The description of FIG. 2B is explained with (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the substrate layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.
(2). The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; Characterized in that the method comprises the steps of:
3
In one embodiment of the present invention, it is a cross-sectional view showing a first example of a non-catalyst substrate growth graphene provided by the present invention for producing a non-catalyst substrate growth graphene.
4
In one embodiment of the present invention, it is a top view showing a second example of a non-catalyst substrate growth graphene provided with the method for producing the non-catalyst substrate growth graphene.
5
In one embodiment of the present invention, it is a plan view for explaining at least one linear graphene provided in the proposed method for producing a non-catalyst substrate growth graphene and a growing direction thereof.
6
In one embodiment of the present invention, it is a plan view illustrating at least one plane-shaped graphene provided by the method for producing the non-catalyst substrate growth graphene and the growth direction thereof.
7
7 is a perspective view showing a first example of a schematic view of a proposed non-catalyst substrate growth graphene production apparatus in one embodiment of the present invention.
8A
FIG. 8A is a first perspective view showing a second example of a schematic representation of the proposed non-catalyst substrate growth graphene production apparatus in one embodiment of the present invention. FIG.
8B
Fig. 8B is a second perspective view showing a second example of the present invention schematically showing a non-catalyst substrate growth graphene producing apparatus proposed in one embodiment of the present invention. Fig.
8C
FIG. 8C is a detailed view of a second perspective view showing a second example of the present invention, schematically showing a non-catalyst substrate growth graphene production apparatus proposed in the present embodiment. FIG.
8D
Fig. 8D is a first perspective view showing a third example of a schematic representation of a proposed apparatus for producing non-catalytic substrate growth grains in an embodiment of the present invention. Fig.
8E
Fig. 8E is a first perspective view showing a fourth example of the present invention schematically showing a non-catalyst substrate growth graphene production apparatus proposed in one embodiment of the present invention. Fig.
9A
9A is a cross-sectional view showing a first example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
9B
9B is a cross-sectional view showing a second example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
10A
10A is a cross-sectional view illustrating a third example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
10B
10B is a cross-sectional view showing a fourth example of a schematic representation of a proposed piezo injection system in one embodiment of the present invention.
11A
11A is a cross-sectional view showing a first example of a schematic representation of a proposed solenoid injection system in one embodiment of the present invention.
11B
11B is a cross-sectional view showing a second example of a schematic representation of a proposed solenoid injection system in one embodiment of the present invention.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be exemplary only, and are not intended to limit the scope of the invention.

Non-catalytic substrate growth method of graphene growth and non-catalytic substrate growth Graphene

Therefore, there is a need for a technique for producing graphene directly on the surface of a substrate, without catalyst metal, on the substrate.

Thus, in one embodiment of the present invention, the proposed method of manufacturing the non-

(One). With the substrate thereafter,

(2). A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,

(3). In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, There is provided a method for producing graphene by growing a graphene on a substrate.

Again, a carbon-containing gas is supplied and low pressure chemical vapor deposition (LPCVD) is performed to grow graphene on the substrate without a catalyst layer; The method comprising the steps of:

Here, low-pressure chemical vapor deposition (LPCVD) is performed to maintain the temperature at a constant value (for example, several tens to several hundreds mTorr) before supplying the carbon-containing gas It is to be understood that the height is inclusive of the process, or may be described further, which is omitted because it is determined that the gist of the present invention may be unnecessarily blurred, but those skilled in the art will readily understand it. In one embodiment of the present invention, the low-pressure chemical vapor deposition (LPCVD) is performed in a state where the flow of hydrogen is kept constant (for example, several sccm ).

The "Low-Pressure Chemical Vapor Deposition (LPCVD)" proposed in the present invention can be expressed as "LPCVD". The LPCVD process proposed in the present invention is a heteroepitaxial growth type of Van der Waals type that occurs by adsorbing and diffusing hydrocarbon radicals and nuclei on the surface of the substrate. Means an LPCVD process as a process for producing graphene on a substrate in the absence of a catalyst layer.

Alternatively, the LPCVD process proposed in the present invention is a growth type of Van der Waals type that is generated nuclei on the surface of a substrate by adsorbing and diffusing hydrocarbon radicals, Means an LPCVD process as a method for producing graphene without growth of graphene on a substrate in a state in which the graphene is grown in a state where the graphene is grown.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene comprises the steps of adsorbing, diffusing hydrocarbon radicals and nucleating on the surface of the substrate while maintaining LPCVD A heteroepitaxial growth type of Van der Waals type grown on the substrate without grafting the catalyst layer.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene comprises the steps of adsorbing, diffusing hydrocarbon radicals and nucleating on the surface of the substrate while maintaining LPCVD And the graphene is grown on the substrate without the catalyst layer.

In one embodiment of the present invention, the initial hydrocarbon molecules in the process for preparing the non-catalyst substrate grown graphene may have a low sticking coefficient condition at the surface of the substrate together with hydrogen molecules.

The "carbon-containing gas" as referred to in the present invention may mean only hydrocarbons in which the concentration distribution of the hydrogen gas is kept constant, that is, the hydrogen gas is supplied in a uniform concentration distribution. Incidentally, "carbon-containing gas" can only refer to hydrocarbons.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present invention may be described as an integral gas, including hydrocarbons and hydrogen gas.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present invention may be described as an integral gas that includes both hydrocarbons and inert gases.

In one embodiment of the present invention, the "carbon-containing gas" as presented in the present invention may mean hydrocarbon.

In one embodiment of the present invention, the method for producing the non-catalyst substrate grown graphene is also described below.

(One). With the substrate thereafter,

(2). Low-Pressure Chemical Vapor Deposition (LPCVD) is performed while the concentration of the carbon-containing gas is kept unbalanced.

Then, on the surface of the substrate layer, carbon grows into graphene. If the LPCVD is continuously performed in such a state that the concentration of the carbon-containing gas is unbalanced, the grown graphene grows further.

Since the LPCVD is continuously performed with the concentration of the carbon-containing gas being unbalanced, the carbon grows so as to form a crystal structure with the already-grown graphene. Thus, finally, graphene forms a large crystal.

Therefore, unlike the conventional method using the metal catalyst, the graphene can be directly grown on the substrate without the catalyst layer. In addition, in the conventional method of transferring a pattern of a graphene in advance, even if a small pattern of micrometer scale is tried to be made, damage is caused at the time of transferring. However, in the method of manufacturing a non-catalyst substrate grown graphene according to the present invention, a graphene pattern having a fine line width can be formed on a substrate by freely adjusting the shape of the substrate layer by performing selective etching. In addition, in the conventional method of transferring graphene to a large area of the substrate and then performing patterning by etching, there arises a problem that graphene is not accurately provided when the graphene is applied to a substrate having a structure already formed. However, in the manufacturing method of the non-catalyst substrate growth graphene proposed in the present invention, such a problem does not occur by freely adjusting the shape of the substrate layer by performing selective etching. Here, the selective etching means performing the etching process to leave only a desired portion.

In one embodiment of the present invention, in addition to the method of performing the selective etching, in addition to the method of performing the etching, the resist mask is used to dissolve the resist mask after the substrate layer is deposited at the position provided with the resist mask, And a method of removing the substrate layer formed on the surface thereof and accordingly having a substrate layer having a desired pattern and shape.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene is such that, when the supply environment of the carbon-containing gas is appropriately set and graphen growth is performed, a small number of single crystal graphenes can do.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate-grown graphene is carried out by appropriately setting the supply environment of the carbon-containing gas and the growth environment of the graphene, A single crystal graphene may be provided.

In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the substrate layer may refer to a substrate layer on which the deposition of the substrate layer and selective etching have been performed.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the substrate may be placed into the LPCVD chamber with the substrate layer being present to perform the method of manufacturing the non-catalytic substrate growth graphene.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the step of positioning the substrate includes a load-locked chamber positioning process, a roll-to-roll positioning process, Processing method can be provided.

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate growth graphene, the step of positioning the substrate may comprise a positioning process selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system, and the like.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the graphene formation by using the load-lock chamber.

In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene can appropriately adjust the graphene forming environment by using a rod-lock chamber.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, in addition to the kind of the carbon-containing gas, the supply pressure, the supply range, the supply amount, the type of the substrate layer and the size of the chamber, the degree of vacuum, the temperature and the holding time of the LPCVD process .

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, in addition to the kind of the carbon-containing gas and the supply pressure, the supply pressure of the hydrogen and the inert gas, the supply range, the supply amount, the type of the substrate layer, And the holding time can act as an important factor.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the inert gas means being supplied with the carbon-containing gas during the method of manufacturing the non-catalyst substrate growth grains, You can.

In one embodiment of the present invention, in the method for producing a non-catalyst substrate-grown graphene, hydrogen is not particularly specified, while the method for producing the non-catalyst substrate grown graphene is carried out, May be performed as part of the method of manufacturing the noncatalyst substrate growth graphene.

In one embodiment of the present invention, in the method for producing a non-catalytic substrate-grown graphene, the hydrogen gas is supplied to the non-catalyst substrate This may mean that the growth is carried out as part of the manufacturing process of graphene.

In one embodiment of the present invention, in the method for producing a non-catalytic substrate-grown graphene, while inert gas is not specifically described, while performing the method of manufacturing the non-catalyst substrate-grown graphene, This may mean that the growth is carried out as part of the manufacturing process of graphene.

In an embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the step of providing the substrate layer provided on the substrate includes at least one of deposition, electron beam deposition, sputtering, atomic layer deposition (ALD), physical vapor deposition (PVD), or chemical vapor deposition (LPCVD). However, the present invention is not limited thereto.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene is important for the role of hydrogen, which can affect the size and nucleation density of graphene crystals.

In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, the hydrogen is kept in a state where the flow of hydrogen is kept constant (for example, For example, several sccm) may be performed as part of the method of manufacturing the noncatalyst substrate growth graphene.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene may further perform a preheating process for preheating the substrate prior to performing the LPCVD.

In one embodiment of the present invention, graphene is formed by LPCVD in a method for producing a non-catalyst substrate grown graphene, for example, after heating to a temperature of about 1000 캜 while maintaining a degree of vacuum of several tens of mTorr , Adsorbs, diffuses, and diffuses hydrocarbon radicals on the substrate in the chamber by injecting (or supplying) a carbon-containing gas while maintaining a degree of vacuum on the order of several hundreds of mTorr, Type heteroepitaxial growth type in which graphene is grown on a substrate without a catalyst layer. In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, (1). The hydrogen is maintained at 2 sccm during the process of the production of the noncatalytic substrate growth graphene, and (2). The degree of vacuum maintained prior to injecting (or supplying) the carbon-containing gas maintains a degree of vacuum below 40 mTorr, and (3). (4) maintain a vacuum of less than 500 mTorr while injecting (or supplying) the carbon-containing gas; Here, the carbon-containing gas may be characterized by maintaining methane at 35 sccm.

In one embodiment of the present invention, graphene is formed by LPCVD in a method for producing a non-catalyst substrate grown graphene, for example, after heating to a temperature of about 1000 캜 while maintaining a degree of vacuum of several tens of mTorr , Adsorbs, diffuses, and diffuses hydrocarbon radicals on the substrate in the chamber by injecting (or supplying) a carbon-containing gas while maintaining a degree of vacuum on the order of several hundreds of mTorr, And the graphene is grown on the substrate without the catalyst layer. In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, (1). The hydrogen is maintained at 2 sccm during the process of the production of the noncatalytic substrate growth graphene, and (2). The degree of vacuum maintained prior to injecting (or supplying) the carbon-containing gas maintains a degree of vacuum below 40 mTorr, and (3). (4) maintain a vacuum of less than 500 mTorr while injecting (or supplying) the carbon-containing gas; Here, the carbon-containing gas may be characterized by maintaining methane at 35 sccm.

In one embodiment of the present invention, graphene is formed by LPCVD in a method for producing a non-catalyst substrate grown graphene, for example, after heating to a temperature of about 1000 캜 while maintaining a degree of vacuum of several tens of mTorr , Adsorbs, diffuses, and diffuses hydrocarbon radicals on the substrate in the chamber by injecting (or supplying) a carbon-containing gas while maintaining a degree of vacuum on the order of several hundreds of mTorr, Type heteroepitaxial growth type in which graphene is grown on a substrate without a catalyst layer.

Thus, the method of preparing the non-catalytic substrate growth graphene is based on the adsorption, diffusing, and nucleation of hydrocarbon radicals and heteroepitaxial growth of the nucleus on the surface of the substrate. growth type graphene graphene grains grown on a substrate without a catalyst layer. It is important that the LPCVD process uniformly injects the carbon-containing gas across the substrate layer region so that the graphenes grow uniformly. When the above process is performed, an uncatalysed substrate growth graphene on which the graphenes are directly in contact can be formed on the substrate.

However, if the concentration distribution of the carbon-containing gas is uneven, the growth of the graphene starts from the point where the concentration of the carbon-containing gas is high, and grows toward the point where the concentration of the carbon-containing gas is low.

Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, the position where the crystal of graphene starts to grow and the direction of growth can be controlled.

By controlling the starting point and direction of graphene growth in this manner, the grain boundaries can be controlled to a predetermined position because grain boundaries of graphene are formed only at the growth start point and at the growth end point connected to the graphenes, By reducing the growth starting point of graphene, a large grain size can be realized.

In one embodiment of the present invention, graphene is formed by LPCVD in a method for producing a non-catalyst substrate grown graphene, for example, after heating to a temperature of about 1000 캜 while maintaining a degree of vacuum of several tens of mTorr , Adsorbs, diffuses, and diffuses hydrocarbon radicals on the substrate in the chamber by injecting (or supplying) a carbon-containing gas while maintaining a degree of vacuum on the order of several hundreds of mTorr, And the graphene is grown on the substrate without the catalyst layer.

Therefore, the method of manufacturing the noncatalyst substrate growth graphene is a growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing, diffusing and hydrocarbyl radicals, Wherein the graphene is grown on a substrate in a state that the graphene is not provided. It is important that the LPCVD process uniformly injects the carbon-containing gas across the substrate layer region so that the graphenes grow uniformly. When the above process is performed, an uncatalysed substrate growth graphene on which the graphenes are directly in contact can be formed on the substrate.

In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.

(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.

(2). LPCVD is performed.

(3). Then, in the type of heteroepitaxial growth of the van der Waals type which is generated nuclei on the surface of the substrate by adsorbing, diffusing and hydrocarbyl radicals, To grow into graphene in the region. That is, a specific region of the substrate layer serves as a starting position for the growth of graphene.

(4). When the LPCVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the LPCVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.

(5). (1) to (5) in which graphene can finally realize a large crystal grain diameter.

In one embodiment of the present invention, this embodiment is a method for producing graphene without growth of a catalyst from a desired position to a desired direction. The method for producing the non-catalyst substrate grown graphene is described as <A> or  below.

<A>

(2). LPCVD is performed.

The present embodiment is a method for producing graphene of a non-catalyst substrate for producing linear graphenes when the above embodiment <A> is performed.

(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.

(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows up and down.

(3). (1) to (3) in which line-like graphene (s) are formed when the production method of the non-catalyst substrate grown graphene is completed.

<A>

(2). LPCVD is performed.

The present embodiment is a method for producing graphene without catalyst for producing graphene having a grain pattern of a square pattern (or checker pattern) when the above embodiment <A> is repeated twice.

(3). Non-Catalyst Substrate Growth Upon completion of the graphene fabrication process, line-wise graphene (s) are formed.

(4). Thereafter, to the linearly arranged yes upper pin (s) of the substrate based on the techniques described in Example <A>, linearly arranged yes and parallel to the longitudinal direction of the pin (s), exactly linear graphene (or linear graphene The concentration of the carbon-containing gas in the intermediate region of the carbon-containing gas.

(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, with the remaining linear graphene (s) as the starting position, the plane graphen grows in the lateral direction, which is perpendicular to the long direction of the linear graphene (s).

(6). (1) to (6), wherein the surface graphenes are separated by a grain boundary of a square pattern (or a checkerboard pattern) after the production of the non-catalyst substrate grown graphene is completed can do.

Therefore, in one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene is characterized in that graphene is grown at regular intervals by a vertical method (first direction) and a lateral method (second direction) And may be formed in a pattern shape. That is, graphene made of a single crystal of a square can be formed so as to cover the substrate.

In one embodiment of the present invention, since the method of manufacturing the non-catalyst substrate growth graphene can control the starting point and direction of growth of the graphene on the substrate, Shape. Furthermore, the area of the graphene of the single crystal can be significantly increased as compared with the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystal may remain with the single crystal. In addition, a shape such as a square or a rectangle may take a form of a trapezoidal shape or a parallelogram shape instead of an exact square or rectangular shape.

<A>

(2). LPCVD is performed.

(3). It then grows into graphene in a specific region of the substrate layer in a growth type of Van der Waals type that is generated nuclei on the surface of the substrate, adsorbing, diffusing, and the like of hydrocarbon radicals do. That is, a specific region of the substrate layer serves as a starting position for the growth of graphene.

<A>

(2). LPCVD is performed.

In one embodiment of the present invention, this embodiment is a method for producing graphene without growth of a catalyst from a desired position to a desired direction. The method for producing the non-catalytic substrate growth graphene is described below as <A>, , <C> .

<A>

(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.

(2). LPCVD is performed.

(4). When the LPCVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the LPCVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.

(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the one or more substrate layers perpendicular to the long direction of the line graphene.

(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the remaining linear graphene as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of the linear graphene.

(3). And finally, the surface graphenes are brought into direct contact with the surface of the substrate.

<C>

(One). The embodiments based on the techniques described in <A>, and one or more linearly arranged yes form the pin, and on the basis of the technique described in Example , may be one or more surfaces Yes form a pin.

(2). Thus, the grain boundaries of the grown portion of the plane graphen grow until it reaches the side plane graphene (the portion where another linear graphene was disposed).

(3). (1) to (3), wherein the grains are formed in such a manner that a line segment connecting lattice points close to each other becomes a grain boundary, and a single crystal is arranged in a lattice pattern.

<A>

(2). LPCVD is performed.

<C>

(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.

(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.

(3). LPCVD is performed.

(4). Then, in the type of heteroepitaxial growth of the van der Waals type which is generated nuclei on the surface of the substrate by adsorbing, diffusing and hydrocarbyl radicals, To grow into graphene in the region. That is, a specific region of the substrate layer serves as a starting position for the growth of graphene.

(5). When the LPCVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the LPCVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.

(6). (1) to (6), wherein graphene can finally realize a large crystal grain size having a three-dimensional height.

(3). LPCVD is performed.

(4). It then grows into graphene in a specific region of the substrate layer in a growth type of Van der Waals type that is generated nuclei on the surface of the substrate, adsorbing, diffusing, and the like of hydrocarbon radicals do. That is, a specific region of the substrate layer serves as a starting position for the growth of graphene.

In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. In one embodiment of the invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the hydrogen gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.

In one embodiment of the present invention, the carbon-containing gas may be supplied as hydrogen.

In one embodiment of the present invention, the carbon-containing gas may be supplied as argon.

In one embodiment of the present invention, the carbon-containing gas may be supplied, such as hydrogen and argon.

In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the carbon-containing gas may include, but is not limited to, methane.

In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, the carbon-containing gas is composed of a hydrogen gas and a gas capable of forming activated carbon.

In one embodiment of the present invention, hydrogen (or hydrogen gas) can play a role in determining the size and domain shape of graphene crystals.

In one embodiment of the present invention, after the LPCVD process in the method of manufacturing the non-catalyst substrate grown graphene, a cooling process may be performed on the formed graphene. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is obtained by simply removing the heat source used for the heat treatment. Thus, it is possible to obtain a sufficient cooling rate even by removing the heat source.

In one embodiment of the present invention, the method for the production of the non-catalytic substrate growth graphene, after performing the cooling process for the formed graphene after the LPCVD process, argon and hydrogen gas may be supplied in the cooling process.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may further comprise supplying a reducing gas with the carbon-containing gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the number of graphene layers may be several to fifty, but is not limited thereto. The LPCVD process for providing the number of graphene layers is performed at least once.

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the number of graphene layers may be several to fifty, but is not limited thereto. The LPCVD process and the cooling process for providing the number of graphene layers are performed at least once.

In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the carbon-containing gas means containing hydrocarbon.

In an embodiment of the present invention, non-catalytic substrate growth So, in the manufacturing method, the carbon of the pin-containing gas may refer to CH ₄ gas.

In one exemplary embodiment of the present invention, non-catalytic substrate growth So, in the manufacturing method, the carbon of the pin-containing gas may indicate a mixture of CH ₄ and Ar gases.

In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the carbon-containing gas may mean a carbon-containing gas stream.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the carbon-containing gas in the chamber of the LPCVD apparatus is either only present in the carbon-containing gas or in combination with an inert gas such as argon, helium, It is possible to exist. Further, in one embodiment of the present invention, the carbon-containing gas may comprise hydrogen in addition to the carbon-containing gas.

In one embodiment of the present invention, the carbon-containing gas may be meant to include hydrogen in addition to the compound comprising carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may mean containing hydrogen along with a gas capable of forming activated carbon. In addition, it may be present together with an inert gas such as argon, helium, and the like.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas such as argon, helium, etc., in addition to the compound comprising carbon.

In one embodiment of the invention, the carbon-containing gas may be meant to include an inert gas, such as argon, helium, etc., along with a gas capable of forming activated carbon.

In one embodiment of the present invention, the carbon-containing gas may mean containing an inert gas such as argon, helium, etc. in addition to the hydrocarbon gas.

In one embodiment of the present invention, the method for manufacturing the non-catalyst substrate grown graphene can be provided with a large-area graphene by freely adjusting the size of the substrate layer. In addition, since the carbon-containing gas is supplied in a gaseous state (supplied in a gaseous state) and there is no restriction on the shape of the substrate layer, various types of graphenes can be provided. For example, graphene having a three-dimensional solid shape may also be provided.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the thickness of the graphene by controlling the LPCVD time.

In one embodiment of the present invention, a method for manufacturing a non-catalytic substrate growth graphene comprises providing a substrate layer on a substrate, thereafter supplying a carbon-containing gas and performing a low-pressure chemical vapor deposition (LPCVD) ) To form a catalytic layer in the form of heteroepitaxial growth of the van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing hydrocarbon radicals Growing graphene on the substrate in the absence thereof; The method comprising the steps of:

In one embodiment of the present invention, a method for manufacturing a non-catalytic substrate growth graphene comprises providing a substrate layer on a substrate, thereafter supplying a carbon-containing gas and depositing a low-pressure chemical vapor deposition (LPCVD) ) Is carried out to form a van der Waals type growth type which is generated as a nucleus on the surface of a substrate by adsorbing and diffusing hydrocarbon radicals, To grow graphene; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the substrate is provided with one or more Piezo material, magnetic particles, particles having charge, . &Lt; / RTI >

In one embodiment of the invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And

b. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the step of cooling the non-catalyst substrate growth graphene can be further included.

b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And

c. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the step of cooling the non-catalyst substrate growth graphene can be further included.

b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And

c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And

d. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the step of cooling the non-catalyst substrate growth graphene can be further included.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may additionally include several steps, but it may be carried out by supplying a carbon-containing gas and basically performing low pressure chemical vapor deposition (LPCVD) A heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of a substrate by adsorbing and diffusing hydrocarbon radicals, To grow the graphene on the substrate.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may additionally include several steps, but it may be carried out by supplying a carbon-containing gas and basically performing low pressure chemical vapor deposition (LPCVD) In the growth type of van der Waals type which is generated as nuclei on the surface of the substrate by adsorbing, diffusing and hydrocarbyl radicals, a graphene Is grown.

In one embodiment of the present invention, in the method of making the non-catalytic substrate growth graphene, performing low pressure chemical vapor deposition (LPCVD) is performed by performing low pressure chemical vapor deposition (LPCVD) it means.

In one embodiment of the present invention, in a method of making a non-catalytic substrate grown graphene, performing low pressure chemical vapor deposition (LPCVD) is performed at a point in time when graphene is grown, i.e., at a vacuum degree (e.g., several hundreds mTorr) Means performing low pressure chemical vapor deposition (LPCVD) from the point at which the carbon-containing gas is supplied to grow the graphene while maintaining the temperature (for example, 1000 DEG C).

'' -

a. With the substrate thereafter,

c. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; of

The present invention also provides a manufacturing method of a non-catalyst substrate grown graphene.

In one embodiment of the present invention, in the method for the production of the non-catalytic substrate growth graphene, the carbon-containing gas supply is configured such that the concentration distribution of the carbon-containing gas in the substrate layer is unevenly distributed, And direction of graphene to realize a large crystal of graphene; .

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate grown graphene, the carbon-containing gas supply is configured such that the specific area of the substrate layer is low in the concentration of the carbon-containing gas, Adjusting the starting position of graphene growth by constructing the carbon-containing gas to have a high concentration; .

In one embodiment of the present invention, in the method of producing the non-catalyst substrate grown graphene, the carbon-containing gas supply is performed such that the concentration distribution in the direction parallel to the surface of the substrate, among the concentration distribution of the carbon- Growing the graphene in a direction parallel to the surface of the substrate; .

In one embodiment of the present invention, the method for producing the non-catalytic substrate growth graphene comprises the method for producing the non-catalytic substrate growth graphenes described in <A> below.

<A>

The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; &Lt; / RTI > wherein the graphene graphene is grown on a substrate.

In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:

c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the present invention further comprises a step of cooling the grown graphene on the substrate after performing the method of manufacturing the non-catalyst substrate grown graphene; The method comprising the steps of:

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the present invention further comprises a step of cooling the grown graphene on the substrate after performing the method of manufacturing the non-catalyst substrate grown graphene; The method comprising the steps of:

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the present invention further comprises a step of cooling the grown graphene on the substrate after performing the method of manufacturing the non-catalyst substrate grown graphene; The method comprising the steps of:

In one embodiment of the present invention, a method of manufacturing a non-catalytic substrate growth graphene further comprises cooling the graphene grown on the substrate; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, growing graphene is performed by a roll-to-roll process; .

a. Forming a substrate layer on the substrate, and

b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and

c. Performing LPCVD, and

d. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; To

The method comprising the steps of: preparing a graphene growth substrate;

a. Forming a substrate layer on the substrate, and

b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and

c. Performing LPCVD, and

d. In a heteroepitaxial growth type of Van der Waals type nucleation on the surface of the substrate, adsorbing, diffusing, and the like of hydrocarbon radicals, a specific region of the substrate layer The starting position of growth of graphene, and

e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and

f. Finally, graphene forms a large crystal; To

The method comprising the steps of: preparing a graphene growth substrate;

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate. ; To

The method comprising the steps of: preparing a graphene growth substrate;

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. In a growth type of van der Waals type that occurs naturally on the surface of the substrate, adsorbing, diffusing, and hydrocarbyl radicals, a specific region of the substrate layer is formed at the starting position of graphene growth ; And

f. Finally, graphene forms a large crystal; To

The method comprising the steps of: preparing a graphene growth substrate;

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the supply of the carbon-containing gas may be performed before the LPCVD is performed, And performing LPCVD in the middle of the LPCVD process.

In one embodiment of the present invention, in the method for producing the non-catalytic substrate grown graphene, the supply of the carbon-containing gas may be performed after performing the LPCVD, And a method of manufacturing the non-catalyst substrate growth graphene for performing the supply of the gas.

In one embodiment of the present invention, a method of making a non-catalytic substrate growth graphene further comprises cooling the graphene directly contacting the surface of the substrate; The method comprising the steps of:

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are produced by a method of manufacturing a noncatalyst substrate growth graphene,

Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface of the graphenes by a method of manufacturing a noncatalyst substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, the method for producing the non-catalyst substrate grown graphene further comprises cooling the line graphene and cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention, the present invention provides a non-catalytic substrate growth graphene,

The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; Free substrate growth graphene.

The corresponding noncatalytic substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Free substrate growth graphene. In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

The corresponding noncatalytic substrate growth graphene is a single crystal in each of the regions surrounded by the grain boundaries; Free substrate growth graphene. In one embodiment of the present invention, in the present invention, the first direction and the second direction are orthogonal, the intervals of the grain boundaries along the first direction are constant, and the grain boundaries along the second direction The spacing is constant; Free substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.

In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).

In one embodiment of the present invention, a method of manufacturing an electronic component may refer to a method of manufacturing a memory.

In one embodiment of the present invention, the present invention comprises an electronic component, characterized by comprising a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing a non-catalytic substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a non-catalytic substrate growth graphene.

In one embodiment of the present invention, the electronic component is a transistor; But is not limited thereto.

In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.

In one embodiment of the present invention, the electronic component is a central processing unit (CPU); .

In one embodiment of the present invention, the electronic component is a memory; .

''

In one embodiment of the present invention,

a. With the substrate thereafter,

c. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; The method comprising the steps of:

In one embodiment of the present invention,

a. With the substrate thereafter,

c. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. To do; The method comprising the steps of:

In one embodiment of the present invention, the carbon-containing gas supply

The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,

Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; .

In one embodiment of the present invention, the carbon-containing gas supply

The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,

That a specific region of the substrate layer becomes the starting position of growth of graphene; .

In one embodiment of the present invention,

The carbon-containing gas supply may cause grains to grow in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer becomes uneven that; .

Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; The method comprising the steps of:

That a specific region of the substrate layer becomes the starting position of growth of graphene; The method comprising the steps of:

Growing graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer becomes uneven; The method comprising the steps of:

In one embodiment of the present invention,

c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; The method comprising the steps of:

In one embodiment of the present invention,

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:

In one embodiment of the present invention,

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:

In one embodiment of the present invention,

Further comprising cooling the graphene grown on the substrate; The method comprising the steps of:

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; The method comprising the steps of: (a)

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

f. Finally, graphene forms a large crystal; The method comprising the steps of: (a)

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. ; The method comprising the steps of: (a)

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface of the graphenes by a method of manufacturing a noncatalyst substrate growth graphene; The method comprising the steps of: In addition, in an embodiment of the present invention, the present invention further comprises cooling said plane graphene; The method comprising the steps of:

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

The corresponding noncatalytic substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; Free substrate growth graphene. In addition, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

The corresponding noncatalytic substrate growth graphene is a single crystal in each of the regions surrounded by the grain boundaries; Free substrate growth graphene. In addition, in one embodiment of the present invention, the first direction and the second direction are orthogonal to each other, and the interval of the grain boundaries along the first direction is constant, and in the second direction The spacing of the grain boundaries is constant; Free substrate growth graphene.

''

Non-catalytic substrate growth

In one embodiment of the present invention, the present invention provides a process for producing a carbon-containing gas, comprising the steps of: supplying a carbon-containing gas; supplying a carbon-containing gas from the gas supply unit; And a heating device arranged to totally and / or partially heat an area of the substrate having a substrate having a substrate layer disposed in contact with the ejected carbon-containing gas and a substrate layer in contact with the ejected carbon-containing gas. Thereby providing a catalyst substrate growing graphene manufacturing apparatus.

In one embodiment of the present invention, the present invention provides a gas supply system comprising: a gas supply unit for supplying a carbon-containing gas;

A heating device arranged to locally heat a region of the substrate having a substrate layer in contact with the ejected carbon-containing gas; The present invention also provides an apparatus for manufacturing a non-catalyst substrate growth graphene.

A heating device arranged to heat a region of the substrate having a substrate layer in contact with the ejected carbon-containing gas; The present invention also provides an apparatus for manufacturing a non-catalyst substrate growth graphene.

In one embodiment of the present invention, the present invention further comprises a gas flow controller (gas supply regulator) connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas outlet, Thereby providing a graphene manufacturing apparatus.

In one embodiment of the present invention, the carbon-containing gas further comprises an inert gas and hydrogen gas.

In one embodiment of the invention, the carbon-containing gas further comprises an inert gas.

In one embodiment of the present invention, the gas ejection portion is characterized by having a storage portion in which the carbon-containing gas is accommodated, and a nozzle portion for ejecting the carbon-containing gas.

In one embodiment of the present invention, the shape of the nozzle portion may include, but is not limited to, a circle, a square, a rectangle, and the like.

In one embodiment of the present invention, the gas ejection portion is characterized by comprising a reservoir in which the carbon-containing gas is contained, and a piezo injection system for ejecting the carbon-containing gas.

In one embodiment of the invention, the gas ejection portion is characterized in that it comprises a reservoir in which the carbon-containing gas is contained, and a solenoid injection system for ejecting the carbon-containing gas.

In one embodiment of the present invention, the gas ejector comprises a reservoir in which the carbon-containing gas is contained, a heating unit for heating the carbon-containing gas to a constant temperature, and a piezo injection system for ejecting the carbon-containing gas .

In one embodiment of the invention, the gas ejector comprises a reservoir in which the carbon-containing gas is contained, a heating portion for heating the carbon-containing gas to a constant temperature, and a solenoid injection system for ejecting the carbon-containing gas .

In an embodiment of the present invention, the gas ejecting portion is provided in a form including a region corresponding to a region of the substrate having the substrate layer.

In an embodiment of the present invention, the heating device is provided in a form including a region corresponding to a region of the substrate having the substrate layer.

In one embodiment of the present invention, the heating device is provided in the same space as the gas ejecting portion.

In one embodiment of the present invention, the heating device may be provided with a halogen lamp, but is not limited to heating to a certain temperature.

In one embodiment of the present invention, the heating device arranged to heat the region of the substrate having the substrate layer is characterized by being provided in the same space as the gas ejecting portion.

In one embodiment of the present invention, the apparatus for producing a non-catalyst substrate growth graphene comprises (1). Gas spouting part, (2). A substrate having a substrate layer, (3). (1) to (3), which are constituted by a heating device, and a heating device.

In one embodiment of the present invention, the outer portion of the apparatus for non-catalytic substrate growth graphene production is characterized by comprising an exhaust device.

In one embodiment of the present invention, the exhaust system can be used to easily evacuate the gas remaining inside the outer portion of the non-catalyst substrate growth graphene production apparatus to prevent the incorporation of impurity gases in the production of the non-catalyst substrate growth graphene .

In one embodiment of the invention, the exhaust system can be used to form a flow of carbon-containing gas in the production of the non-catalyst substrate growth graphene.

In one embodiment of the present invention, the outer periphery of the non-catalyst substrate growth graphene manufacturing apparatus is provided with a vacuum holding device for holding the inside of the apparatus for manufacturing a non-catalyst substrate growth graphene at a predetermined degree of vacuum (for example, several tens to several hundreds of mTorr) .

In one embodiment of the present invention, the vacuum holding device may mean a pumping system, but is not limited in terms of a vacuum holding device.

In an embodiment of the present invention, the vacuum holding device is not provided in the drawings of the present specification but is not provided as an exhaust device, but is separately provided in an apparatus for manufacturing a non-catalyst substrate growth graphene, May mean a device that maintains the interior of the device at a constant degree of vacuum (e.g., tens to hundreds of mTorr).

In one embodiment of the present invention, the outer periphery of the non-catalyst substrate growth graphene manufacturing apparatus is connected to a method of positioning selected from among a load-locked chamber positioning process, a roll-to-roll positioning process, .

In one embodiment of the present invention, the outer periphery of the noncatalytic substrate growth graphene production apparatus is characterized by being connected to a method of positioning selected among an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the gas ejection unit comprises (1). Top and bottom, (2). Left and right, (3). (1), (2), (3), (3), and (3). Here, the forward direction is defined as a forward direction in which the substrate having the substrate layer is introduced into the non-catalyst substrate growth graphene production apparatus and drawn out.

In one embodiment of the present invention, an apparatus for producing a non-catalytic substrate-grown graphene has a substrate layer disposed therein. Top and bottom, (2). Left and right, (3). Back and forth, (4). (1), (2), (3), (4), and (4). Here, the forward direction is defined as a forward direction in which the substrate having the substrate layer is introduced into the non-catalyst substrate growth graphene production apparatus and drawn out.

In one embodiment of the present invention, the gas ejecting portion ejects gas while moving in a moving direction selected from at least one of an upper, a lower, a left, a right, a front, and a back; .

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene comprises at least one selected from the group consisting of a substrate having a substrate layer disposed therein, an upper, a lower, a left, a right, Adjusting the position by the movement; .

In one embodiment of the present invention, in the construction of the gas spouting portion for spouting gas while moving in the moving direction in which at least one of the upper, lower, left, right, front, and rear is selected, It is preferable to constitute a positioning apparatus.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene comprises at least one selected from the group consisting of a substrate having a substrate layer disposed therein, an upper, a lower, a left, a right, It is preferable to use a positioning device using a servo motor.

In an embodiment of the present invention, the apparatus for producing a non-catalyst substrate growth graphene includes a heating device for heating a substrate having a substrate layer disposed therein to a predetermined temperature, the substrate being connected to a substrate having a substrate layer can do.

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; To

The method comprising the steps of:

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate. ; To

The method comprising the steps of:

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; , &Lt; / RTI &

Wherein the steps are controlled by a controller of a non-catalyst substrate growth graphene manufacturing apparatus.

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate. ; , &Lt; / RTI &

In one embodiment of the present invention, the controller of the apparatus for producing a non-catalyst substrate growth graphene may be provided in the form of a computer, but the present invention is not limited thereto.

In one embodiment of the present invention, the control device of the apparatus for non-catalytic substrate growth graphene production may be adopted as a basis for connection with the non-catalyst substrate growth graphene production apparatus by wire, but the present invention is not limited thereto, And wirelessly.

In one embodiment of the present invention, the step of performing low-pressure chemical vapor deposition (LPCVD) is performed while the substrate or gas ejector with the substrate layer is moving.

In one embodiment of the present invention, the apparatus for producing non-catalytic substrate growth grains further comprises a cooling section for cooling the area of the non-catalyst substrate growth grains.

In one embodiment of the present invention, the cooling section is characterized in that it is gradually cooled at a constant speed so that the graphene can uniformly grow and be uniformly arranged.

In one embodiment of the present invention, the cooling section is characterized in that after the LPCVD process, the cooling process is performed on the formed graphene.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene is characterized in that it is comprised in a process platform that facilitates the manufacture of a functional device exhibiting enhanced reliability with respect to a semiconductor material-based device.

In one embodiment of the present invention, an apparatus for manufacturing a non-catalytic substrate growth graphene is provided that facilitates the fabrication of a functional device exhibiting enhanced reliability with respect to semiconductor material-based devices produced by "bottom-up & And is included in the process platform.

In one embodiment of the present invention, the control device of the non-catalytic substrate growth graphene production device may be included in a control device of the process platform that facilitates the manufacture of a functional device exhibiting enhanced reliability with respect to the semiconductor material- have. In one embodiment of the present invention, the above description may mean that the process manager is a system that performs overall equipment control of the process platform in one place.

In one embodiment of the invention, the gas supply device is characterized by supplying a carbon-containing gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas and a hydrogen gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas and an inert gas.

In one embodiment of the present invention, the gas supply device is characterized by supplying a carbon-containing gas, a hydrogen gas and an inert gas.

In one embodiment of the present invention, the gas ejector is characterized in that the carbon-containing gas is supplied with the carbon-containing gas by heating the carbon-containing gas to a predetermined temperature so that the activated carbon can be easily formed.

In one embodiment of the present invention, the gas ejecting portion may be characterized in that the carbon-containing gas is heated to a certain temperature and ejected.

In an embodiment of the present invention, the gas ejection portion is connected to the gas supply portion by the gas connection pipe.

In one embodiment of the present invention, the gas supply regulator can easily control the amount of gas supplied from the gas supply to the gas spout.

In an embodiment of the present invention, the gas supply regulator may include a solenoid valve to easily control the amount of gas supplied to the gas ejector.

In one embodiment of the present invention, the proposed solenoid refers to an electronic solenoid.

In one embodiment of the present invention, the proposed solenoid refers to an electronically controlled solenoid.

In one embodiment of the present invention, the gas supply regulator includes a pressure control valve to easily control the amount of gas supplied to the gas ejection portion. Here, the pressure control valve means a valve that maintains a constant pressure in the gas connection pipe, controls the maximum pressure, or regulates the pressure of the gas supplied to the gas ejection portion.

In one embodiment of the present invention, the gas supply regulator includes a flow control valve to easily control the amount of gas supplied to the gas ejection portion. Here, the flow control valve means a valve for controlling the flow rate of the gas.

In one embodiment of the present invention, the gas supply regulator can regulate the degree of formation of graphene by appropriately adjusting important factors such as the supply pressure of the carbon-containing gas, the supply range, the supply amount, and the like.

In an embodiment of the present invention, the gas ejecting portion includes a nozzle module, and the nozzle module may be provided with a nozzle module having a solenoid.

In one embodiment of the invention, the gas ejector may comprise a solenoid ejection system. In one embodiment of the present invention, the solenoid injection system may be provided with a injection system having a solenoid. Alternatively, in an embodiment of the present invention, the solenoid injection system may be provided with a nozzle module having a solenoid.

In one embodiment of the present invention, a nozzle module having a solenoid is an apparatus for instantaneously ejecting a gas into the inside of the apparatus for manufacturing a non-catalyst substrate growth graphene, and comprises a very small hole and a device for opening and closing it can.

In one embodiment of the present invention, a nozzle module with a solenoid is an apparatus that instantaneously sprays gas into the inside of the apparatus for manufacturing a non-catalyst substrate growth graphene, which includes a very small hole, a device for opening and closing it, and a needle It can be characterized as.

In one embodiment of the present invention, the solenoid injection system is controlled by a control device of the apparatus for producing non-catalyst substrate growth grains.

In one embodiment of the present invention, the shape of the nozzle may include, but is not limited to, a circle, a square, a rectangle, and the like.

In one embodiment of the present invention, the solenoid injection system regulates the injection amount of the carbon-containing gas.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the solenoid injection system may basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the solenoid injection system has the following operation sequence. (One). Voltage application (current connection), (2). Solenoid valve module operation, (3). Piston module operation, (4). Needle opening, (5). (1) to (5), which consist of gas injection, and the like.

In one embodiment of the present invention, the solenoid injection system has the following operation sequence. (One). Voltage interruption (current interruption), (2). Solenoid valve module stop, (3). Piston module stop, (4). Needle closure, (5). (1) to (5) in which the gas injection stop is performed.

In one embodiment of the present invention, a solenoid refers to a device that includes a configuration that moves a plunger within a coil when a current is applied to the coil to provide mechanical movement.

In one embodiment of the present invention, a solenoid refers to a module that includes a configuration that moves a plunger within a coil when a current is applied to the coil and has mechanical motion.

In one embodiment of the present invention, the solenoid injection system senses a change in gas due to repetitive injection, and enables precise injection control in consideration of the difference. This precise injection control detects the change of the gas due to the repetitive injection of the solenoid injection system, determines the result of the analysis in the control device of the non-catalyst substrate growth graphene manufacturing apparatus, It can be said to perform precise injection control in consideration of the difference.

In one embodiment of the present invention, detecting a change in gas may mean detecting a change in pressure of the gas ejected to the pressure measurement sensor in real time and / or intermittently.

In one embodiment of the present invention, the solenoid injection system can control the degree of formation of graphene by appropriately adjusting important factors such as the supply range of the carbon-containing gas, the supply amount, and the like.

In one embodiment of the present invention, the gas ejector has a nozzle module, and the nozzle module may be provided with a nozzle module or piezo nozzle module having a piezo actuator (for example, a piezo electric actuator).

In one embodiment of the present invention, a piezoelectric actuator (e.g., a piezoelectrical actuator) includes a piezo ceramic layer and an electrode layer, wherein the piezo ceramic layer and the electrode layer are arranged such that one layer is on top of one layer, And are arranged in such a manner as to be aligned with each other.

In one embodiment of the present invention, the piezo actuator (e.g., piezo electric actuator) may be characterized as comprising a piezo crystal material, but is not limited in that it is a piezo material.

In one embodiment of the invention, the gas ejection portion may comprise a piezo injection system. In one embodiment of the invention, the piezo injection system may comprise a injection system with a piezo actuator (e.g. piezo electric actuator). Alternatively, in one embodiment of the present invention, the piezo injection system may be provided with a nozzle module or piezo nozzle module having a piezo actuator (e.g., piezo electric actuator).

In one embodiment of the present invention, the piezo injection system is capable of adjusting the operation time to 100 microseconds or less so that the concentration distribution of the carbon-containing gas in the substrate layer in a direction parallel to the surface of the substrate It is useful for non-uniformity.

In one embodiment of the invention, the piezo injection system can precisely control the injection timing by reducing the time of injection compared to the conventional nozzle system, and significantly less noise and vibration than conventional nozzle systems.

In one embodiment of the present invention, the piezo injection system senses a change in gas due to repetitive injection and enables precise injection control taking into account the difference. This precise injection control detects the change of the gas due to the repetitive injection of the piezo injection system and makes a judgment after analysis in the control device of the non-catalyst substrate growth graphene manufacturing apparatus. In the control device of the non- It can be said to perform precise injection control in consideration of the difference.

In one embodiment of the invention, the piezo injection system has the following sequence of operations. (One). Electric charging (or application of voltage), (2). Piezo actuator operation, (3). Hydraulic coupler hydraulic pressure increase, (4). Pressure control valve open, (5). Needle opening, (6). (1) to (6), which consist of gas injection, and gas injection.

In one embodiment of the invention, the piezo injection system has the following sequence of operations. (One). Electric discharge (or interruption of voltage), (2). Piezo actuator stop, (3). Hydraulic coupler hydraulic pressure reduction, (4). Pressure control valve closed, (5). Needle closure, (6). (1) to (6) in which the gas injection is stopped.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a grid-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the arrangement of the piezo injection system can basically adopt a matrix-like arrangement, but is not limited thereto.

In one embodiment of the present invention, the piezo injection system is controlled by a control device of the non-catalyst substrate growth graphene production apparatus.

In one embodiment of the invention, the piezo injection system regulates the amount of carbon-containing gas injected.

In one embodiment of the present invention, the piezo injection system can control the degree of graphene formation by appropriately adjusting important components such as the supply range, feed rate, etc. of the carbon-containing gas.

In an embodiment of the present invention, the apparatus for producing a non-catalyst substrate growth graphene may further comprise various detection devices. Such an example may include an apparatus for detecting and / or discriminating the state of a substrate provided with a photo-detecting device and provided with a non-catalyst substrate growth graphene.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may be configured to transport the wafer or substrate from a storage device to a storage device, It is well known to a person skilled in the art that a mechanism (device) for carrying out the transfer from the transporting device to the transporting and storing device is provided in the non-catalyst substrate growing graphene producing device, and therefore it may not be described in detail in the present invention. Here, the storage device may refer to a storage device in which a wafer or a substrate is stored and transferred to the wafer transfer system.

In one embodiment of the present invention, an apparatus for manufacturing a non-catalyst substrate growth graphene includes a mechanism for bringing a wafer or a substrate into an apparatus for manufacturing a non-catalyst substrate growth graphene and carrying the wafer or the substrate out of the apparatus for manufacturing a non- (Apparatus) for bringing the wafer or the substrate into the non-catalyst substrate growing graphene manufacturing apparatus and carrying it out of the apparatus for producing the non-catalyst substrate growing graphene, It is well known to those skilled in the art and thus may not be described in detail in the present invention.

In one embodiment of the present invention, an apparatus (device) for carrying a wafer or substrate from a storage device to a carry-in and storage device may mean, but is not limited to, a wafer handler (or wafer transfer robot).

In an embodiment of the present invention, a device (apparatus) for bringing a wafer or a substrate into and out of the apparatus for manufacturing a non-catalyst substrate growth graphene graphene includes a wafer handler (or a wafer transfer robot) But is not so limited.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may additionally include a plurality of devices, but is basically provided with a carbon-containing gas and performs low pressure chemical vapor deposition (LPCVD) (heteroepitaxial growth) type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing, diffusing and radicals on the surface of the substrate. The step of growing the fin is performed.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may additionally include a plurality of devices, but is basically provided with a carbon-containing gas and performs low pressure chemical vapor deposition (LPCVD) the growth of graphene on the substrate without a catalyst layer is carried out in a growth type of Van der Waals type which is generated nuclei on the surface of the substrate by adsorption, .

''

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

A heating device arranged to locally heat a region of the substrate having a substrate layer in contact with the ejected carbon-containing gas; To

And a non-catalytic substrate growth graphene production apparatus.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

And a non-catalytic substrate growth graphene production apparatus.

In one embodiment of the present invention,

Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the invention, the gas supply regulator may be characterized as comprising a solenoid valve.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a nozzle portion for ejecting a carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a piezo injection system for ejecting carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a solenoid injection system for ejecting carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

A heating section for heating the carbon-containing gas to a predetermined temperature, and

Comprising a piezo injection system for ejecting carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a solenoid injection system for ejecting carbon-containing gas; .

In one embodiment of the present invention, the heating unit provided in the gas ejection unit may be characterized in that the carbon-containing gas is heated to a predetermined temperature so that the activated carbon can be easily formed.

In one embodiment of the present invention, the heating portion provided in the gas ejecting portion may be characterized by heating the carbon-containing gas to a predetermined temperature.

In an embodiment of the present invention, the heating unit included in the gas ejecting unit may include a heating wire, but the present invention is not limited thereto.

In one embodiment of the present invention, the heating section provided in the gas ejection section is controlled by a control device of the substrate growth graphene production apparatus; .

In one embodiment of the present invention,

Including a region corresponding to a region of a substrate having a substrate layer; .

In one embodiment of the present invention,

In one embodiment of the present invention, the heating device is provided in the same space as the gas ejecting portion; .

In one embodiment of the present invention, the gas ejection portion ejects gas while moving; .

In one embodiment of the present invention,

Adjusting the position of the substrate having the substrate layer; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention,

Further comprising a cooling part for gradually cooling at a constant speed so that the non-catalyst substrate growth grains can uniformly grow and be uniformly arranged; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention, the present invention is embodied in an apparatus for manufacturing a non-catalytic substrate growth graphene; And a process platform.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including solenoid injection systems; And a gas discharge portion.

In one embodiment of the present invention,

The solenoid injection system

The concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer; .

In one embodiment of the present invention,

The solenoid injection system being controlled by a controller of the non-catalyst substrate growth graphene production apparatus; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a piezo injection system with a piezo electric actuator; And a gas discharge portion.

In one embodiment of the present invention,

Piezoelectric actuators

A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; .

In one embodiment of the present invention,

The piezo injection system being controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; .

In one embodiment of the present invention,

The piezo injection system

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a substrate layer, and

An outer surface of a non-catalytic substrate growth graphene production apparatus accommodating a heating device; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention,

Non-catalytic substrate growth The outer part of the graphene production apparatus comprises an exhaust device; .

In one embodiment of the present invention,

Noncatalytic Substrate Growing The graphene manufacturing apparatus outer periphery is provided with an exhaust device and a vacuum holding device; .

In one embodiment of the present invention,

A non-catalytic substrate growth outer surface of a graphene manufacturing apparatus includes a vacuum holding device for maintaining a non-catalyst substrate grown graphene manufacturing apparatus at a constant degree of vacuum; .

In one embodiment of the present invention,

Non-Catalytic Substrate Growth The graphene fabrication device exterior

Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; .

In one embodiment of the present invention,

Non-Catalytic Substrate Growth The graphene fabrication device exterior

Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; .

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; The method comprising the steps of:

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a solenoid injection system for ejecting carbon-containing gas; And a gas discharge portion.

In one embodiment of the invention, the solenoid injection system

''

Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".

The present invention has been described as an upper group, a group, a range of a group, a lower range of a group, and an inclusion range of a group.

Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in the foregoing. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.

Rather than being specifically described herein, generally known methods, generally known devices, generally known materials, and generally known techniques may be applied to embodiments of the present invention that are widely apparent without resort to unnecessary experimentation. The methods, apparatuses, materials, sequences, and particularly techniques known in the art, as described herein, can be applied to embodiments of the present invention without intending to be so.

It will be understood by those skilled in the art that the present invention may be practiced without recourse to any undue explanation.

The terms and expressions which have been employed herein are used as terms of the detailed description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is therefore to be understood that, although the present invention has been described by means of some preferred embodiments, it is to be understood that the exemplary embodiments and optional features, modifications and variations of the concepts described herein can be reclassified by conventional techniques and the like, May be considered within the scope of the invention as defined by the appended claims.

It is apparent that the specific embodiments provided herein are illustrative of useful embodiments of the present invention and that the present invention may be practiced using many variations of the devices, components, and method steps.

Useful embodiments of the invention presented herein may include various optional configurations and methods and steps.

Here, when a higher group is described, individual members that can be included in the higher group and combinations of lower groups that can be included in the higher group are feasible within the described range of the higher group. Thus, when a parent group is described herein, it should be understood that it includes the possible subgroup combinations and individual members of the group. Also, when a parent group is described, it should be understood that the individual members that can be included in the parent group and the combination of the child groups that can be included in the parent group are included in the described range of the parent group.

Additionally, where no other description is required, it will be understood that, in one embodiment of the present invention, a variant of the presented material is included in the applicant's variant without intending to be bound by the important combination claimed herein.

In an embodiment of the invention, what has been described in the singular can mean plural.

In one embodiment of the present invention, when a manufacturing process is presented, the manufacturing process may refer to a manufacturing process that is performed more than once.

The specific names of the materials or components of the components described or illustrated herein are to be construed as merely exemplary insofar as those of ordinary skill in the art to which the invention pertain may denote specific names of materials or components of the same component Can be called. Accordingly, the specific names of the materials or components of the components described or illustrated herein should be understood based on the overall description of the invention as set forth.

Combinations of groups described or described herein may be used to practice the invention, although not otherwise mentioned.

Combinations of groups described or described herein that may be included within an upper group may be used to practice the invention, if not otherwise stated.

The individual values that may be included in the ranges of the groups described or described above as well as when the ranges of the groups described or described herein are given are intended to be included within the scope of the above described or described group.

Combinations of groups that may be included in the ranges of the groups described or described above as well as when the ranges of the groups described or illustrated herein are given are intended to be included within the scope of the groups described or illustrated above.

In one embodiment of the present invention, equivalently known components or synthetic combinations or compounds of the components described or illustrated can be used to practice the invention without intending to be mentioned otherwise.

It will be appreciated that the scope of the description of the groups described herein may not appear in the claims herein.

It will be understood that the groups described herein may not appear in the claimed claims herein.

In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art.

In one embodiment of the present invention, the present invention, which is described in terms of groups, ranges of groups, sub-ranges of groups, and ranges of groups, can be realized within the scope of the description of a possible higher group of the present invention.

Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation.

In addition, those skilled in the art will recognize that the description set forth in the present invention in the context of a group, a group of sub-ranges, a group of sub-ranges and a group, You can see that it is.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

In addition, the present invention, which is suitably and schematically illustrated, may be realized without the need for any elements or components, or without limitation or limitation, which are not described in detail.

It is also to be understood that the present invention which is properly illustrated schematically is merely illustrative and that those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

In one embodiment of the present invention, any materials and methods known equivalently to the materials and methods described in the present invention may be included in an embodiment of the invention inadvertently.

100: substrate layer
300: Carbon-containing gas
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: substrate layer
1004: grain boundary
1500: Grain growth direction
2000: Line graphene
2001: Surface graphene
5000B, 5100A, 5100B, 5100C: Non-catalyst substrate growth graphene manufacturing equipment
5010, 5110: Growth of non-catalytic substrate
5020, 5120: gas supply part
5021, 5022, 5023, 5121, 5122, 5123: gas supply device
5030, 5131, 5132: gas supply regulator
5041, 5042, 5141, 5142, 5143, 5144:
5051, 5052, 5151, 5152: main heating device
5060, 5160: substrate on which a substrate layer is formed
5070, 5170: Growth of non-catalytic substrate graphene
5080, 5180, 5181: Exhaust and vacuum holding device
5090, 5190: Control device of non-catalytic substrate growth graphene production equipment
5095, 5195, 5196: Sub-heating device
5098, 5099: Rollers
5197: wafer (substrate) vacuum transfer system
5198: Wafer (substrate) transport system
6100A, 6100B, 6200A, 6200B: piezo injection system
6110, 6210: Piezoelectric actuator module
6120, 6220: accumulator
6130: Needle operation amplifier
6140: Needle
6250: Coupling module
6260: Control valve module
6270: Nozzle module
7100A, 7100B: Solenoid injection system
7110: Solenoid module (or solenoid valve module)
7120: accumulator
7130: Piston module
7140: Needle

Claims

a. With the substrate thereafter,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. With the substrate thereafter,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. To do; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the starting point and direction of growth of graphene to realize a large crystal of graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
That a specific region of the substrate layer becomes the starting position of growth of graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
The carbon-containing gas supply may cause grains to grow in a direction parallel to the surface of the substrate, as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- To do; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
Further comprising cooling the grown graphene on the substrate; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing LPCVD, and
d. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; To
The method comprising the steps of:

a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing LPCVD, and
d. In a heteroepitaxial growth type of Van der Waals type nucleation on the surface of the substrate, adsorbing, diffusing, and the like of hydrocarbon radicals, a specific region of the substrate layer The starting position of growth of graphene, and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally, graphene forms a large crystal; To
The method comprising the steps of:

a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing LPCVD, and
d. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. ; To
The method comprising the steps of:

a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing LPCVD, and
d. In a growth type of van der Waals type that occurs naturally on the surface of the substrate, adsorbing, diffusing, and hydrocarbyl radicals, a specific region of the substrate layer is formed at the starting position of graphene growth ; And
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally, graphene forms a large crystal; To
The method comprising the steps of:

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface are produced by the method of manufacturing the noncatalyst substrate growth grains described in claim 3,
Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by the method of manufacturing the noncatalyst substrate growth graphenes according to claim 3; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface of the graphene grains are produced by the method for producing the graphene of the present invention described in claim 4,
Preparing surface graphenes growing in a second direction parallel to the surface from the line graphene and directly contacting the surface by the method of manufacturing the noncatalyst substrate growth graphene according to claim 4; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Linear graphenes growing in a first direction parallel to the surface of the substrate and directly in contact with the surface of the graphene grains are produced by the method of manufacturing the non-catalyst substrate growth grains described in claim 5,
Preparing surface graphenes growing in a second direction parallel to the surface from the linear graphenes and in direct contact with the surface by the method of manufacturing the noncatalyst substrate growth graphenes according to claim 5; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 15 to 17,
Further comprising cooling said planar graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

With non-catalytic substrate growth graphene,
Wherein the noncatalytic substrate growth graphene directly contacts the surface of the substrate,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; of
Non-catalytic substrate growth characterized by graphene

With non-catalytic substrate growth graphene,
The non-catalytic substrate growth graphene directly contacts the surface of the substrate,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The non-catalytic substrate growth graphene has a grain boundary along a second direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene is a single crystal in a region surrounded by the grain boundaries; of
Non-catalytic substrate growth characterized by graphene

The method of claim 20,
The first direction and the second direction being orthogonal; of
Non-catalytic substrate growth characterized by graphene

With non-catalytic substrate growth graphene,
The non-catalytic substrate growth graphene directly contacts the surface of the substrate,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The non-catalyst substrate-grown graphene has a plurality of grain boundaries along a second direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene is a single crystal in each of the regions surrounded by the grain boundaries; of
Non-catalytic substrate growth characterized by graphene

23. The method of claim 22,
Wherein the first direction and the second direction are orthogonal to each other,
The interval of the grain boundaries along the first direction is constant,
The intervals of the grain boundaries along the second direction are constant; of
Non-catalytic substrate growth characterized by graphene

A method of manufacturing an electronic component, characterized by comprising a method of manufacturing an uncatalyzed substrate growth graphene according to claim 1, claim 2, claim 15, claim 16 or claim 17

A method for manufacturing an electronic component, characterized by comprising the manufacturing method of the non-catalyst substrate grown graphene according to claim 1, claim 2, claim 15, claim 16 or claim 17 part

Characterized in that it comprises a non-catalytic substrate growth graphene according to claim 19, claim 20 or claim 22

A gas supply unit for supplying a carbon-containing gas;
A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;
A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And
A heating device arranged to locally heat a region of the substrate having a substrate layer in contact with the ejected carbon-containing gas; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

A gas supply unit for supplying a carbon-containing gas;
A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;
A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And
A heating device arranged to heat a region of the substrate having a substrate layer in contact with the ejected carbon-containing gas; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

28. The method according to any one of claims 27 to 28,
Further comprising a gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The gas-
A reservoir in which a carbon-containing gas is contained, and
Comprising a nozzle portion for ejecting a carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The gas-
A reservoir in which a carbon-containing gas is contained, and
Comprising a piezo injection system for ejecting carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The gas-
A reservoir in which a carbon-containing gas is contained, and
A heating section for heating the carbon-containing gas to a predetermined temperature, and
Comprising a piezo injection system for ejecting carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The gas-
Including a region corresponding to a region of a substrate having a substrate layer; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The heating device
Including a region corresponding to a region of a substrate having a substrate layer; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The heating device
Provided in the same space as the gas ejection portion; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
The gas-
Jetting gas while moving; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
Adjusting the position of the substrate comprising the substrate layer; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

28. The method according to any one of claims 27 to 28,
Further comprising a cooling part for gradually cooling at a constant speed so that the non-catalyst substrate growth grains can uniformly grow and be uniformly arranged; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

Comprising an apparatus for producing a non-catalytic substrate growth graphene according to any one of claims 27 to 28; of
Characterized process platform

A reservoir in which a carbon-containing gas is contained, and
A heating section for heating the carbon-containing gas to a predetermined temperature, and
Comprising a piezo injection system with a piezo electric actuator; of
The gas-

42. The method of claim 40,
The piezo electric actuator
A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; of
The gas-

42. The method of claim 40,
The piezo injection system
Controlled by a controller of the non-catalyst substrate growth graphene production apparatus; of
The gas-

42. The method of claim 40,
The piezo injection system
The concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer; of
The gas-

A gas ejection portion, and
A substrate having a substrate layer, and
An outer surface of a non-catalytic substrate growth graphene production apparatus accommodating a heating device; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

45. The method of claim 44,
Wherein the outer surface of the non-catalyst substrate growth graphene production apparatus includes an exhaust device and a vacuum holding device; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

45. The method of claim 44,
The outer periphery of the non-catalyst substrate growth graphene production apparatus
Linked to a method of positioning selected from a load-locked chamber positioning process, a roll-to-roll positioning process, or the like; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

45. The method of claim 44,
The outer periphery of the non-catalyst substrate growth graphene production apparatus
Connected to atmospheric pressure wafer transfer system, vacuum wafer transfer system, selected locating process method; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

Supplying and discharging a carbon-containing gas; And
Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And
In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Growing graphene on a substrate; , &Lt; / RTI &
Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Supplying and discharging a carbon-containing gas; And
Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And
Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. ; , &Lt; / RTI &
Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

A reservoir in which a carbon-containing gas is contained, and
A heating section for heating the carbon-containing gas to a predetermined temperature, and
Comprising a solenoid injection system for ejecting carbon-containing gas; of
The gas-

52. The method of claim 50,
The solenoid injection system
The concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer; of
The gas-