KR20160105680A

KR20160105680A - Manufacturing method of substrate graphene growth without using metal catalyst and substrate graphene growth without using metal catalyst and manufacturing device

Info

Publication number: KR20160105680A
Application number: KR1020150028677A
Authority: KR
Inventors: 이윤택
Original assignee: 이윤택
Priority date: 2015-02-28
Filing date: 2015-02-28
Publication date: 2016-09-07

Abstract

According to the present invention,
a. A substrate having a substrate layer formed thereon,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The present invention also provides a method for producing graphene without catalyst.
Further, according to the present invention,
a. A substrate having a substrate layer formed thereon,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The present invention also provides a method for producing graphene without catalyst.
In addition, the present invention provides a method for producing graphene grown on a non-catalyst substrate ...
In addition,
With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; &Lt; RTI ID = 0.0 > a < / RTI >
In addition,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; &Lt; RTI ID = 0.0 > a < / RTI >
In addition,
With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; &Lt; RTI ID = 0.0 > a < / RTI >
In addition,
A gas supply unit for supplying a carbon-containing gas;
A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;
A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And
A heating device arranged to heat an area of a substrate having a substrate layer; To
The present invention also provides an apparatus for manufacturing a non-catalytic substrate growth graphene.

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a graphene substrate without graphene growth, and a method for manufacturing graphene without using a metal catalyst and manufacturing device,

TECHNICAL FIELD The present invention relates to a method for producing an uncatalyzed substrate-grown graphene, an uncatalyzed substrate-grown graphene, and an electronic component including the same.

The present invention also relates to an apparatus for manufacturing a non-catalyst substrate growth graphene.

Graphene is a hexagonal material consisting of a single layer of carbon atoms, which transports electrons 100 times faster than silicon.

In addition, graphene has been extensively studied in the fields of electricity, electronics, etc. worldwide due to its unique properties such as high electron mobility.

For such a method of producing graphene (a method of growing graphene), a growth method using a catalyst layer is mainly used.

Graphene produced by the conventional technique becomes a heterogeneous polycrystalline film randomly growing crystal grains since crystals randomly grow from the catalyst metal. Therefore, there is a demand for a technique of producing a single crystal graphene as large as possible by limiting the growth of grain boundaries to desired positions by controlling the growth of graphene.

Further, since the graphene growth method using the catalytic metal once forms graphene, the metal of the catalyst is sandwiched between the graphene and the substrate. Therefore, the metal removal requires a lot of effort and is easy to remove completely It is not.

In addition, a method of transferring graphene rather than a method of growing graphene is likely to cause defects when transferring graphene.

Therefore, there is a need for a technique for producing graphene directly on the surface of a substrate, without catalyst metal, on the substrate.

SUMMARY OF THE INVENTION The present invention has been devised to solve the problems as described above, and it is an object of the present invention to provide a method for manufacturing a non-catalyst substrate-grown graphene, a non-catalyst substrate-grown graphene and an electronic component including the same.

It is another object of the present invention to provide an apparatus for producing a growth substrate of a non-catalyst substrate by solving the above problems.

Therefore, in order to solve the above-described problem, the present invention requires a technique for manufacturing graphene that directly contacts the surface of a substrate without a catalyst metal on the substrate. For that reason,

a. A substrate having a substrate layer formed thereon,

b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,

c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; And a method for producing the graphene grains is disclosed.

Further, according to the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; And a method for producing the graphene grains is disclosed.

The present invention also provides a method for producing graphene grown on a non-catalyst substrate.

In addition,

With non-catalytic substrate growth graphene,

The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,

The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,

The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; The present invention relates to a non-catalytic substrate growth graphene.

In addition,

With non-catalytic substrate growth graphene,

The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,

Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,

The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; The present invention relates to a non-catalytic substrate growth graphene.

In addition,

With non-catalytic substrate growth graphene,

The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,

The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; The present invention relates to a non-catalytic substrate growth graphene.

In addition,

A gas supply unit for supplying a carbon-containing gas;

A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;

A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And

A heating device arranged to heat an area of a substrate having a substrate layer; To

The present invention also provides an apparatus for manufacturing a non-catalytic substrate growth graphene.

The present invention provides a method for producing graphene without growth of a catalyst.

The present invention also provides a non-catalyst substrate grown graphene.

The present invention also provides a method for producing a non-catalyst substrate-grown graphene, a non-catalyst substrate-grown graphene, and an electronic component including the same.

Further, the present invention provides an apparatus for producing a non-catalyst substrate grown graphene.

1
1,
(One). A substrate having a substrate layer formed thereon,
(2). A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
(3-4). In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Growing graphene on the substrate layer,
(1) to (3) to (4), each of which is constituted of a non-catalyst-substrate-grown graphene and a non-catalyst-substrate-grown graphene.
1,
(One). A substrate having a substrate layer formed thereon,
(2). A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
(3-4). In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Growing step,
(1) to (3) to (4), each of which is constituted of a non-catalyst-substrate-grown graphene and a non-catalyst-substrate-grown graphene.
2A,
2A is a view schematically showing (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the substrate layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(2). The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; &Lt; / RTI > wherein the graphene graphene is grown on a substrate.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
2B
2B is a view schematically showing (1) or (2) described below.
(One). If the concentration distribution of the carbon-containing gas in the substrate layer is nonuniform, the growth of graphene starts from the point where the concentration of the carbon-containing gas is high and grows toward the point where the concentration of the carbon-containing gas is low.
Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
(2). The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; &Lt; / RTI > wherein the graphene graphene is grown on a substrate.
Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.
3
In one embodiment of the present invention, it is a cross-sectional view schematically showing a first example of graphene provided in the present invention for producing a noncatalytic substrate growth graphene.
4
In one embodiment of the present invention, it is a cross-sectional view schematically showing a first example of a substrate provided with a substrate layer to be presented.
5
In one embodiment of the present invention, is a cross-sectional view schematically illustrating a second example of a substrate provided with a substrate layer to be presented.
6A
FIG. 6A is a first perspective view showing a first example of a schematic view of a proposed non-catalyst substrate growth graphene production apparatus in one embodiment of the present invention. FIG.
6B
Fig. 6B is a second perspective view showing a first example of a schematic view of the proposed non-catalyst substrate growth graphene production apparatus in one embodiment of the present invention. Fig.
6C
FIG. 6C is a third perspective view showing a first example of a schematic representation of the proposed non-catalyst substrate growth graphene production apparatus in one embodiment of the present invention. FIG.
6D
FIG. 6D is a fourth perspective view showing a first example of a schematic representation of the proposed non-catalyst substrate growth graphene production apparatus in one embodiment of the present invention. FIG.
6E
FIG. 6E is a first perspective view showing a second example of the present invention schematically showing a non-catalyst substrate growth graphene production apparatus proposed in one embodiment of the present invention. FIG.
6F
FIG. 6F is a second perspective view showing a second example of the present invention schematically showing a non-catalyst substrate growth graphene production apparatus proposed in one embodiment of the present invention. FIG.
6G
Fig. 6G is a third perspective view showing a second example of the present invention schematically showing a non-catalyst substrate growth graphene production apparatus proposed in one embodiment of the present invention. Fig.
6H
6H is a fourth perspective view showing a second example of the present invention schematically showing a non-catalyst substrate growth graphene production apparatus proposed in one embodiment of the present invention.
7
7 is a cross-sectional view showing a first example of a schematic representation of a proposed piezo flow control system in one embodiment of the present invention.
8
8 is a cross-sectional view showing a second example of a schematic representation of a proposed piezo flow control system in one embodiment of the present invention.
9
9 is a cross-sectional view showing a first example of a solenoid flow control system shown schematically in an embodiment of the present invention.

In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be exemplary only, and are not intended to limit the scope of the invention.

Non-catalytic substrate growth method of graphene growth and non-catalytic substrate growth Graphene

Thus, in one embodiment of the present invention, the proposed method of manufacturing the non-

(One). A substrate having a substrate layer formed thereon,

(2). A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,

(3). In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, A method of manufacturing a non-catalyst substrate grown graphene by growing graphene on a substrate layer.

Describing again, it involves supplying a carbon-containing gas and performing low pressure chemical vapor deposition (LPCVD) to grow graphene on the substrate layer in the absence of a catalyst layer; The method comprising the steps of:

In one embodiment of the present invention, the substrate layer may refer to a substrate on which a substrate layer is formed, although not specifically described.

The "Low-Pressure Chemical Vapor Deposition (LPCVD)" proposed in the present invention can be expressed as "LPCVD". In one embodiment of the present invention, the LPCVD process presented in the present invention involves adsorbing, diffusing, and diffusing hydrocarbon radicals and forming heterojunctions in the van der Waals type hetero This may refer to an LPCVD process as a method for producing graphene on a substrate layer without a catalyst layer, which is a heteroepitaxial growth type, and is a method for producing graphene without catalyst.

Alternatively, in one embodiment of the present invention, the LPCVD process presented in the present invention can be used for adsorbing, diffusing hydrocarbon radicals, and for forming a van der Waals type , Which may be an LPCVD process as a method for producing graphene on a substrate layer without a catalyst layer.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene comprises adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate layer while maintaining LPCVD Heteroepitaxial growth type van der Waals type graphene grown on a substrate layer in the absence of a catalyst layer.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene comprises adsorbing, diffusing, and nucleating hydrocarbon radicals on the surface of the substrate layer while maintaining LPCVD A growth type of Van der Waals type in which graphenes are grown on a substrate layer without a catalyst layer.

In one embodiment of the present invention, the initial hydrocarbon molecules in the method for preparing the non-catalyst substrate grown graphene may have a low sticking coefficient condition at the surface of the substrate layer together with hydrogen molecules.

In one embodiment of the present invention, in the process for the preparation of the non-catalyst substrate grown graphene, C _x H _y , CH _x and C ₂ radicals and hydrogen are diffused on the surface following adsorption.

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the shape and surface roughness of the substrate layer surface and the temperature of the surface have an important role in nucleation.

In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene is also described below.

(One). A substrate having a substrate layer formed thereon,

(2). Low-Pressure Chemical Vapor Deposition (LPCVD) is performed while the concentration of the carbon-containing gas is kept unbalanced.

Then, on the surface of the substrate layer, carbon grows into graphene. If the LPCVD is continuously performed in such a state that the concentration of the carbon-containing gas is unbalanced, the grown graphene grows further.

Carbon continues to undergo LPCVD with the concentration of carbon-containing gas unbalanced, so that carbon grows to form a crystal structure with already grown graphene. Thus, finally graphene is formed. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

Therefore, unlike the conventional method using the metal catalyst, the graphene can be directly grown on the substrate without the catalyst layer.

In one embodiment of the invention, a method of providing a substrate layer may comprise a method of selectively etching the substrate layer to provide a substrate layer having a desired shape. Here, the selective etching means performing the etching process to leave only a desired portion. The etch process is known to those skilled in the art and is therefore not described further herein.

In one embodiment of the present invention, a method of forming a substrate layer may include, in addition to the method of performing the guest etching, a method of forming a resist mask by dissolving a resist mask after formation of a substrate layer, And a method of removing the substrate layer formed on the surface thereof, and thus, a substrate layer having a desired shape.

In one embodiment of the present invention, the substrate layer may be deformed (wholly or partially) during the process of manufacturing the noncatalyst substrate growth graphene, but is not limited thereto.

In one embodiment of the present invention, the substrate layer may be morphologically deformed (wholly or partially) during the process of manufacturing the noncatalyst substrate growth graphene, but is not limited thereto.

In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the substrate layer may refer to a substrate layer on which the deposition of the substrate layer and selective etching have been performed.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the substrate may be placed into the LPCVD chamber with the substrate layer being present to perform the method of manufacturing the non-catalytic substrate growth graphene.

In one embodiment of the present invention, the method of making the non-catalyst substrate growth graphene may use a load-locked chamber, but is not limited thereto.

In one embodiment of the invention, the method of manufacturing the non-catalytic substrate growth graphene may utilize a transport system selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene can appropriately adjust the environment of the substrate in the process before and after the graphene formation by using the load-lock chamber.

In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene can appropriately adjust the graphene forming environment by using a rod-lock chamber.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the degree of graphene formation by appropriately controlling the graphene growth process. Therefore, in order to obtain the desired thickness of the graphene sheet, the temperature, the degree of vacuum, the temperature and the holding time of the LPCVD process, and the like are important in addition to the kind of the carbon-containing gas, the supply pressure, the supply range, the supply amount, Can act as an element. Those skilled in the art will appreciate that these important elements can be selectively and appropriately adjusted by one skilled in the art in an embodiment of the present invention. It will be easy to understand.

In one embodiment of the present invention, in the method for producing a non-catalytic substrate-grown graphene, while inert gas is not specifically described, while the method for producing the non-catalyst substrate-grown graphene is carried out, This may mean that the growth is carried out as part of the manufacturing process of graphene.

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, hydrogen is not added to the non-catalyst substrate growth It may mean that it is included in the manufacturing method of the pin.

In an embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the step of providing the substrate layer provided on the substrate may include a method selected from vapor deposition, coating, Do not.

In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, the formation of graphene by LPCVD is performed by heating at a constant pressure while maintaining a low pressure, for example, a degree of vacuum of several tens of mTorr (Or supply) a carbon-containing gas while maintaining a degree of vacuum on the order of several hundreds of mTorr to adsorb, diffuse and diffuse hydrocarbon radicals on the substrate layer in the chamber, A heteroepitaxial growth type of Van der Waals type nucleation occurs in the surface of the substrate and the graphene is grown on the substrate layer without the catalyst layer.

Thus, the process for preparing the non-catalytic substrate grown graphene involves the adsorbing, diffusing of hydrocarbon radicals and the heteroepitaxial growth of Van der Waals type nucleation on the surface of the substrate layer heteroepitaxial growth type graphene graphene grown on a substrate layer in the absence of a catalyst layer. It is important that the LPCVD process uniformly injects the carbon-containing gas throughout the substrate layer region to form uniform graphene. When the above process is performed, a non-catalyst substrate growth graphene directly contacting graphene on the substrate layer can be formed.

However, if the concentration distribution of the carbon-containing gas is uneven, the growth of the graphene starts from the point where the concentration of the carbon-containing gas is high, and grows toward the point where the concentration of the carbon-containing gas is low.

Therefore, by appropriately setting the concentration distribution of the carbon-containing gas, it is possible to control the direction in which graphene crystals grow.

By controlling the direction of graphene growth in this manner, the grain boundary can be controlled at a predetermined position, since the graphene grain boundary is formed only at the growth start point and at the growth end point connected to the graphenes, It is possible to realize a large crystal grain size by reducing the growth starting point. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, the formation of graphene by LPCVD is performed by heating at a constant pressure while maintaining a low pressure, for example, a degree of vacuum of several tens of mTorr (Or supply) a carbon-containing gas while maintaining a degree of vacuum on the order of several hundreds of mTorr to adsorb, diffuse and diffuse hydrocarbon radicals on the substrate layer in the chamber, And the graphene is grown on the substrate layer without the catalyst layer.

Thus, the method of producing the non-catalytic substrate growth graphene is a growth type of van der Waals type which is nucleated on the surface of the substrate layer and adsorbs and diffuses hydrocarbon radicals, Wherein the graphene grains are grown on the substrate layer in the absence of the catalyst layer. It is important that the LPCVD process uniformly injects the carbon-containing gas throughout the substrate layer region to form uniform graphene. When the above process is performed, a non-catalyst substrate growth graphene directly contacting graphene on the substrate layer can be formed.

In one embodiment of the present invention, a method for producing an uncatalyzed substrate growth graphene can be described as follows.

(One). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.

(2). LPCVD is performed.

(3). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(4). When the LPCVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the LPCVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.

(5). And finally, graphene is formed on the surface of the substrate.

In one embodiment of the present invention, this embodiment is a method of manufacturing an uncatalyzed substrate growth graphene. The method for producing the non-catalyst substrate grown graphene is described as <A> or  below.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

This embodiment is a method for producing graphene without catalyst for growing graphene when carrying out the above embodiment <A> .

(One). Based on the techniques described in Example <A>, carbon in a specific area of the alignment layer of the substrate in the substrate layer, it increases the density of the contained gas.

(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(3). (1) to (3), in which graphene is formed when the production method of the non-catalyst substrate grown graphene is completed.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

This embodiment is a method for producing graphene on a non-catalyst substrate in which plane graphenes are produced when the above embodiment <A> is repeated twice.

(3). Non-catalytic substrate growth When graphene production is completed, graphene is formed.

(4). Thereafter, the graphene on top of the substrate layer, based on the techniques described in Example <A>, well being parallel to the longitudinal direction of the pin, yes and the longitudinal direction of the fin is in a specific area of the side of the vertical direction Increases the concentration of carbon-containing gas.

(5). Then, on the basis of the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then, the remaining graphen is set as the starting position, and the plane graphen grows in the direction perpendicular to the long direction of graphene.

(6). (1) to (6), wherein the surface graphene is formed when the production method of the non-catalyst substrate-grown graphene is completed.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate growth graphene can control the start point and direction of growth on the substrate layer of the graphene. Furthermore, the area of the graphene of the single crystal can be made larger than the conventional one. Of course, in one embodiment of the present invention, a small amount of polycrystals may remain with a small number of single crystals.

In one embodiment of the present invention, the beginning of the growth of graphene may occur not only at the position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of graphene is neglected properly.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene can be carried out by appropriately setting the supply environment of the carbon-containing gas and the growth environment of the graphene, A small number of single crystal graphenes may be provided. Of course, in one embodiment of the present invention, a small amount of polycrystals may remain with a small number of single crystals.

<A>

(2). LPCVD is performed.

(3). Then, as a growth type of Van der Waals type that is nucleated on the surface of the substrate layer, adsorbing, diffusing of hydrocarbon radicals and growth of graphene in a specific region of the substrate layer . Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(One). The concentration of the carbon-containing gas is increased in a certain region on the substrate layer in the substrate layer.

(2). LPCVD is performed.

(4). When the LPCVD is continuously performed in this way, the grown graphene grows further. The concentration of the carbon-containing gas is increased in a specific region on the substrate layer while maintaining the LPCVD. Therefore, the carbon grows to have a crystal structure with the already-grown graphene. At this time, graphenes grow in a direction parallel to the line in a specific region of the substrate layer.

(5). And finally, graphene is formed on the surface of the substrate.

(One). After the description of the embodiment A , the concentration of the carbon-containing gas is increased in a specific region on the left side of the substrate layer which is perpendicular to the longitudinal direction of graphene.

(2). Then, on the basis of the description of the embodiment A , a method for manufacturing the non-catalyst substrate growth graphene is carried out. Then, with the graphene remaining as the starting position, the plane graphen grows from right to left, which is perpendicular to the long direction of graphene.

(3). And finally the surface graphenes are brought into direct contact with the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

(One). The shape of the substrate layer is formed to have a three-dimensional height. In one embodiment of the present invention, a resist mask or the like may be used to remove the substrate layer from being formed at a portion other than the necessary portion.

(2). Thereby increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer.

(3). LPCVD is performed.

(4). Then, in the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and the like of the hydrocarbon radicals, And grow to graphene in a specific region. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(5). When the LPCVD is continuously performed in this way, the grown graphene grows further. Since the concentration of the carbon-containing gas is increased in a specific region of the substrate layer while maintaining the LPCVD, the carbon grows to have a crystal structure with already grown graphene. At this time, graphenes grow in a direction parallel to the specific region of the substrate layer.

(6). (1) to (6), wherein the graphene is finally provided with a three-dimensional height.

(3). LPCVD is performed.

(4). Then, as a growth type of Van der Waals type that is nucleated on the surface of the substrate layer, adsorbing, diffusing of hydrocarbon radicals and growth of graphene in a specific region of the substrate layer . Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to adjust the injection position of the carbon-containing gas.

In one embodiment of the present invention, setting the concentration distribution of the carbon-containing gas can be set to regulate the supply range of the carbon-containing gas.

In one embodiment of the present invention, the concentration distribution of the carbon-containing gas may be suitably varied (or adjusted) during the course of performing the method of manufacturing the non-catalyst substrate growth graphene.

In one embodiment of the present invention, the setting of the concentration distribution of the carbon-containing gas can be set by adjusting the partial pressure of the carbon-containing gas. In one embodiment of the invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the argon gas. Alternatively, in one embodiment of the present invention, the partial pressure of the carbon-containing gas can be adjusted by diluting the carbon-containing gas to the desired concentration in the inert gas.

In one embodiment of the present invention, the carbon-containing gas may be supplied, such as hydrogen and argon.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene can perform a cooling process on the formed graphene after the LPCVD process. The cooling step is a method for uniformly growing the formed graphenes so that the graphenes can be uniformly arranged. Since rapid cooling may cause cracking of the graphene, it is preferable that the cooling step is gradually cooled at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is obtained by simply removing the heat source used for the heat treatment. Thus, it is possible to obtain a sufficient cooling rate even by removing the heat source.

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene may comprise further supplying a reducing gas with the carbon-containing gas. For example, the reducing gas may comprise hydrogen, helium, argon, or nitrogen.

In one embodiment of the present invention, in the method for producing the non-catalyst substrate grown graphene, the LPCVD process for graphene may be performed more than once.

In one embodiment of the present invention, in the method of manufacturing the non-catalyst substrate grown graphene, the LPCVD process and the cooling process for graphene may be performed more than once.

In one embodiment of the present invention, in the method of making the non-catalytic substrate grown graphene, the carbon-containing gas may be meant to include hydrocarbons.

In an embodiment of the present invention, non-catalytic substrate growth So, in the manufacturing method, the carbon of the pin-containing gas may be meant to include the CH ₄ gas.

In one exemplary embodiment of the present invention, non-catalytic substrate growth So, in the manufacturing method, the carbon of the pin-containing gas may indicate a mixture of CH ₄ and Ar gases.

In one embodiment of the present invention, in the method of making the non-catalyst substrate grown graphene, the carbon-containing gas may mean a carbon-containing gas stream.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the carbon-containing gas in the chamber of the LPCVD apparatus may be present only in the carbon-containing gas or may be present together with an inert gas such as argon Do.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the compound comprising carbon. In addition, in one embodiment of the present invention, the carbon-containing gas may be present with hydrogen in the chamber of the LPCVD apparatus.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the gas capable of forming activated carbon. In addition, in one embodiment of the present invention, the carbon-containing gas may be present with hydrogen in the chamber of the LPCVD apparatus.

In one embodiment of the invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the hydrocarbon gas.

In one embodiment of the present invention, the method for producing the non-catalyst substrate growth graphene is such that, when the supply environment of the carbon-containing gas and the growth environment of the graphene are set appropriately and the growth of the graphene is performed, .

In one embodiment of the present invention, the method of manufacturing the non-catalyst substrate grown graphene can control the thickness of the graphene by appropriately adjusting the LPCVD time and the graphen forming environment.

In one embodiment of the present invention, a method for manufacturing a non-catalytic substrate growth graphene comprises providing a substrate layer on a substrate, thereafter supplying a carbon-containing gas and depositing a low-pressure chemical vapor deposition (LPCVD) ) Is carried out to form a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer by adsorbing and diffusing hydrocarbon radicals, The method comprising: growing graphene on a substrate layer without providing the substrate; The method comprising the steps of:

In one embodiment of the present invention, a method for manufacturing a non-catalytic substrate growth graphene comprises providing a substrate layer on a substrate, thereafter supplying a carbon-containing gas and depositing a low-pressure chemical vapor deposition (LPCVD) ) Is carried out to form a van der Waals type growth type which is generated nuclei on the surface of the substrate layer by adsorbing and diffusing hydrocarbon radicals, Including growing graphene on a layer; The method comprising the steps of:

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the substrate layer is provided with one or more Piezo material, magnetic particles, particles having charge, May refer to a substrate layer. In one embodiment of the present invention, the thin film may mean, but is not limited to, a thin film having a thickness of several thousand micrometers or less.

In one embodiment of the invention, Piezo refers to the converse piezoelectric effect. That is, mechanical deformation occurs when an electric field is applied.

In one embodiment of the present invention, the method of making the non-catalyst substrate grown graphene comprises

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And

b. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &

c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.

b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And

c. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.

b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And

c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And

d. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In addition, in one embodiment of the present invention, the method for manufacturing the non-catalyst substrate growth graphene may further include cooling the non-catalyst substrate growth graphene.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may additionally include several steps, but it may be carried out by supplying a carbon-containing gas and basically performing low pressure chemical vapor deposition (LPCVD) A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, To grow the graphene on the substrate layer.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene may additionally include several steps, but it may be carried out by supplying a carbon-containing gas and basically performing low pressure chemical vapor deposition (LPCVD) In a growing type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, The step of growing the fin is performed.

'' -

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; of

The present invention also provides a manufacturing method of a non-catalyst substrate grown graphene.

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; The method comprising the steps of:

In one embodiment of the present invention, in the method for producing the non-catalytic substrate growth graphene, the carbon-containing gas supply is performed such that the concentration distribution of the carbon-containing gas in the substrate layer is unevenly distributed, Controlling; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate grown graphene, the carbon-containing gas supply is configured such that the specific area of the substrate layer is low in the concentration of the carbon-containing gas, The concentration of the carbon-containing gas is set to be high, thereby controlling the direction of growth of the graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, in the method of producing the non-catalyst substrate grown graphene, the carbon-containing gas supply is performed such that the concentration distribution in the direction parallel to the surface of the substrate, among the concentration distribution of the carbon- Growing the graphene in a direction parallel to the surface of the substrate; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, a method of manufacturing an uncatalyzed substrate growth graphene comprises:

c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of: In one embodiment of the present invention, the method further comprises cooling the graphene grown on the substrate layer after performing the method of manufacturing the non-catalyst substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises cooling the graphenes grown on the substrate layer; The method comprising the steps of:

a. Forming a substrate layer on the substrate, and

b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and

c. Performing LPCVD, and

d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:

a. Forming a substrate layer on the substrate, and

b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and

c. Performing LPCVD, and

d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, (Of course, in one embodiment of the present invention, the starting point of graphene growth is not only the position to be proposed in the present invention but also the nucleation of graphene occurs at an undesired position , But it can be understood that the nucleation of graphene occurring at such an unwanted position is properly ignored), and

e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and

f. Finally including the step of forming graphene; of

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. Growing into a graphene in a specific region of the substrate layer with a growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and hydrocarbyl radicals (Of course, in one embodiment of the present invention, graphene nucleation may occur at undesired locations as well as at locations to be presented in the present invention at the beginning of graphene growth, Can be understood as neglecting the nucleation of graphene occurring in the substrate, and

f. Finally including the step of forming graphene; of

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the supply of the carbon-containing gas may be performed before the LPCVD is performed, And performing LPCVD in the middle of the LPCVD process.

In one embodiment of the present invention, in the method of manufacturing the non-catalytic substrate growth graphene, the supply of the carbon-containing gas may be performed after the operation of the LPCVD apparatus and, therefore, And a method of manufacturing an uncatalysed substrate growth graphene for performing a supply of a carbon-containing gas.

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises cooling the formed graphene; The method comprising the steps of:

Graphene which grows in a first direction parallel to the surface of the substrate and which is in direct contact with the substrate layer is produced by a process for producing a noncatalyst substrate growth graphene,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphenes and in direct contact with the substrate layer by a method of manufacturing a non-catalyst substrate growth graphene; The method comprising the steps of:

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises the step of cooling the graphene, further comprising cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention, the present invention provides a non-catalytic substrate growth graphene,

The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; Free substrate growth graphene.

The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. In one embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing an uncatalyzed substrate growth graphene.

In one embodiment of the present invention, a method of manufacturing an electronic component may mean a method of manufacturing a transistor, but the present invention is not limited thereto.

In one embodiment of the present invention, a manufacturing method of an electronic component may mean a manufacturing method of a central processing unit (CPU).

In one embodiment of the present invention, a method of manufacturing an electronic component may refer to a method of manufacturing a memory.

In one embodiment of the present invention, the present invention comprises an electronic component, characterized by comprising a method of manufacturing an electronic component, characterized in that it comprises a method of manufacturing a non-catalytic substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component characterized by comprising a non-catalytic substrate growth graphene.

In one embodiment of the present invention, the electronic component is a transistor; But is not limited thereto.

In one embodiment of the present invention, a transistor means a transistor including a graphen transistor.

In one embodiment of the present invention, the electronic component is a central processing unit (CPU); .

In one embodiment of the present invention, the electronic component is a memory; .

''

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, Growing graphene on a substrate layer; The method comprising the steps of:

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Growing; The method comprising the steps of:

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The method comprising the steps of:

In one embodiment of the present invention, the carbon-containing gas supply

The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,

Controlling the direction of growth of graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, the carbon-containing gas supply

The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,

Grown to a graphene in a specific region of the substrate layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention,

The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention,

c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; The method comprising the steps of:

In one embodiment of the present invention,

d. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:

In one embodiment of the present invention,

e. The substrate being sequentially loaded using a load-locked chamber; The method comprising the steps of:

Further comprising cooling the graphene grown on the substrate layer; The method comprising the steps of:

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, (Of course, in one embodiment of the present invention, the starting point of graphene growth is not only the position to be proposed in the present invention but also the nucleation of graphene occurs at an undesired position But it can be understood that the nucleation of graphene occurring at such an undesired position is properly ignored), and

f. Finally including the step of forming graphene; The method comprising the steps of:

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

d. Growing to a graphene in a specific region of the substrate layer with a growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and hydrocarbyl radicals (Of course, in one embodiment of the present invention, at the beginning of the growth of graphene, nucleation of graphene may occur not only in the position to be proposed in the present invention but also in unwanted positions, It can be understood that the nucleation of graphene generated at the position is appropriately ignored), and

In one embodiment of the present invention,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphenes and in direct contact with the substrate layer by a method of manufacturing a non-catalyst substrate growth graphene; The method comprising the steps of: In addition, in an embodiment of the present invention, the present invention further comprises cooling the graphene, further comprising cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. In addition, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. In addition, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer Including growing graphene on a substrate layer in the absence of the substrate; The method comprising the steps of:

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Including growing graphene; The method comprising the steps of:

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, Including growing graphene on a substrate layer in the state of < RTI ID = 0.0 > The method comprising the steps of:

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene ; &Lt; / RTI > The method comprising the steps of:

In one embodiment of the present invention, the carbon-containing gas supply

Controlling the direction of growth of graphene; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,

In one embodiment of the present invention, the carbon-containing gas supply

Grown to a graphene in a specific region of the substrate layer; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,

In one embodiment of the present invention, the carbon-containing gas supply has a concentration distribution in the direction parallel to the surface of the substrate among the concentration distribution of the carbon-containing gas in the substrate layer, To grow graphene in the direction of; . Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,

In one embodiment of the present invention,

A method of manufacturing an electronic component characterized by including a method of manufacturing a noncatalyst substrate grown graphene.

In one embodiment of the present invention,

A method for manufacturing an electronic component characterized by including a method of manufacturing a non-catalyst substrate-grown graphene.

(2). LPCVD is performed.

(3). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene,

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

(4). Thereafter, on the graphene layer of the substrate layer, on the basis of the description of the embodiment described above, a specific region in the direction parallel to the long direction of the graphene and perpendicular to the long direction of the graphene Increases the concentration of carbon-containing gas.

<A>

(2). LPCVD is performed.

(3). Then, in a growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffusion of compound radicals containing carbon, And grow to a pin. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

(3). LPCVD is performed.

(4). Then, in the type of heteroepitaxial growth of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and adsorbing compound radicals containing carbon, And grow to graphene in a specific region of the substrate layer. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(3). LPCVD is performed.

(4). Then, in a growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffusion of compound radicals containing carbon, And grow to a pin. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(2). LPCVD is performed.

(3). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(3). Then, as a growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Growth. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(5). And finally, graphene is formed on the surface of the substrate.

(2). Based on the techniques described in Example <A>, non-catalytic substrate growth yes performs the manufacturing method of the pin. Then graphene grows in a certain region of the substrate layer. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

<A>

(2). LPCVD is performed.

(5). And finally, graphene is formed on the surface of the substrate.

(3). LPCVD is performed.

(4). Then, in a heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Gt; graphene < / RTI > Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

(3). LPCVD is performed.

(4). Then, as a growth type of van der Waals type which is generated nuclei on the surface of the substrate layer, adsorbing, diffusing and decomposing decomposition products of the carbon-containing compound, Growth. Of course, in one embodiment of the present invention, graphene nucleation may occur not only at a position to be proposed in the present invention but also at an undesired position, It can be understood that the nucleation of the generated graphenes is properly ignored.

In one embodiment of the present invention, the carbon-containing gas may be meant to include an inert gas, such as argon, in addition to the compound comprising carbon.

In one embodiment of the present invention, a substrate may refer to a substrate on which a substrate layer is formed, although not specifically described.

In one embodiment of the present invention,

a. With the substrate, thereafter,

c. In the heteroepitaxial growth type of van der Waals type which is generated nuclei on the surface of the substrate by adsorbing and diffusing the hydrocarbon radicals, Including growing graphene on a substrate; The method comprising the steps of:

In one embodiment of the present invention,

a. With the substrate, thereafter,

c. Graphene is grown on a substrate in the form of van der Waals-type growth that occurs by adsorbing, diffusing and hydrocarbon nuclei on the surface of the substrate. Including; The method comprising the steps of:

In one embodiment of the present invention,

a. With the substrate, thereafter,

c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate and adsorbing and diffusing compound radicals containing carbon, And growing the graphene on the substrate in the absence of the graphene; The method comprising the steps of:

In one embodiment of the present invention,

a. With the substrate, thereafter,

c. In a growth type of van der Waals type that occurs as a nucleus on the surface of a substrate, adsorption, diffusions of compound radicals containing carbon, and the like, Including growing pins; The method comprising the steps of:

In one embodiment of the present invention,

a. With the substrate, thereafter,

c. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, Including growing graphene on a substrate; The method comprising the steps of:

In one embodiment of the present invention,

a. With the substrate, thereafter,

c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate and adsorbs, diffuses and decomposes the decomposition product of the carbon-containing compound, graphene is formed on the substrate without the catalyst layer Including growing; The method comprising the steps of:

'' _ _

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

In one embodiment of the present invention, the method of manufacturing the non-catalytic substrate growth graphene further comprises cooling the graphene grown on the substrate layer; .

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

f. Finally including the step of forming graphene; The present invention also provides a method of manufacturing a non-catalytic substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a method of producing an uncatalyzed substrate growth graphene selected from <A>, , <C> described below.

<A>

The carbon-containing gas supply

Controlling the direction of growth of graphene; &Lt; / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

The carbon-containing gas supply

Grown to a graphene in a specific region of the substrate layer; &Lt; / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

<C>

The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; &Lt; / RTI > wherein the graphene graphene is grown on a substrate. Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, , , <C>, described above, consisting of the formation of graphene grains, which can be understood as neglecting the nucleation of graphene, Method. In an embodiment of the present invention, the present invention also provides a method for producing a non-catalytic substrate growth graphene selected from the above-described <A>, , <C> , &Lt; CC >, respectively.

<A-A>

Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in the above <A>,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene described in the above-described <A>; Characterized in that the method comprises the steps of:

<B-B>

Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in above,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the non-catalyst substrate growth graphenes described in the above-mentioned ; Characterized in that the method comprises the steps of:

&Lt; C-C &

Graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphenes described in <C>

Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphenes described in the above < C >; A method for producing a non-catalytic substrate-grown graphene, which is selected from among the above-mentioned <A-A>, <B-B> and <C-C>

In one embodiment of the present invention, the method of manufacturing the selected non-catalytic substrate growth grains among the above-described <AA>, <BB>, <CC> further comprises cooling the graphene, Further comprising cooling the graphene; .

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; Free substrate growth graphene. Further, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; Free substrate growth graphene. Further, in an embodiment of the present invention, the present invention is characterized in that the first direction and the second direction are orthogonal; Free substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a substrate with a substrate layer and a graphene formed by the method of making the non-catalyst substrate growth graphene. In one embodiment of the present invention, the method of making the non-catalyst substrate growth graphene may utilize a load-locked chamber

In one embodiment of the present invention, the present invention comprises graphene obtained by a process for the production of an uncatalyzed substrate growth graphene.

In one embodiment of the present invention, the present invention comprises an electronic component comprising graphene obtained by the process for producing a non-catalytic substrate growth graphene.

'' __

In one embodiment of the present invention, the present invention comprises a method for producing an uncatalyzed substrate growth graphene selected from the following <A> and .

<A>

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

In one embodiment of the present invention,

a. A substrate having a substrate layer formed thereon,

c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; The present invention also provides a method for producing a non-catalytic substrate growth graphene, which is selected from among the above-described <A> and constituted by a method for producing a non-catalytic substrate growth graphene. Further, in one embodiment of the present invention, the present invention comprises graphene obtained by a process for producing a non-catalytic substrate growth graphene selected from <A> and described above. Further, in one embodiment of the present invention, the present invention includes an electronic component including the graphene.

In one embodiment of the present invention, the present invention relates to a method of manufacturing an uncatalyzed substrate growth graphene,

The carbon-containing gas supply

Controlling the direction of growth of graphene; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

The carbon-containing gas supply

Grown to a graphene in a specific region of the substrate layer; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

The carbon-containing gas supply is performed by growing the graphene in a direction parallel to the surface of the substrate as the concentration distribution in the direction parallel to the surface of the substrate becomes uneven in the concentration distribution of the carbon-containing gas in the substrate layer ; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention, the present invention further comprises cooling the graphene grown on the substrate layer; The method comprising the steps of:

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

In one embodiment of the present invention,

a. Forming a substrate layer on the substrate, and

c. Performing LPCVD, and

<A>

The carbon-containing gas supply

The carbon-containing gas supply

<C>

<A-A>

In one embodiment of the present invention,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene described in the above-described <A>; The method comprising the steps of:

<B-B>

In one embodiment of the present invention,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the non-catalyst substrate growth graphenes described in the above-mentioned ; The method comprising the steps of:

&Lt; C-C &

In one embodiment of the present invention,

Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphenes described in the above < C >; The present invention also provides a method for producing a non-catalytic substrate growth graphene selected from <AA>, <BB> and <CC> described above, . Further, in an embodiment of the present invention, the present invention further includes cooling the graphene, further comprising cooling the plane graphene; The method comprising the steps of:

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

In one embodiment of the present invention,

With non-catalytic substrate growth graphene,

In one embodiment of the present invention,

a. Positioning a substrate provided with a substrate layer,

In one embodiment of the present invention,

a. Positioning a substrate provided with a substrate layer,

In one embodiment of the present invention,

a. Positioning a substrate provided with a substrate layer,

In one embodiment of the present invention,

a. Positioning a substrate provided with a substrate layer,

In one embodiment of the present invention,

a. Positioning a substrate provided with a substrate layer,

In one embodiment of the present invention,

a. Positioning a substrate provided with a substrate layer,

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas, and

Performing Low-Pressure Chemical Vapor Deposition (LPCVD), and

In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; The method comprising the steps of:

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas, and

Performing Low-Pressure Chemical Vapor Deposition (LPCVD), and

In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; The method comprising the steps of:

In one embodiment of the present invention, the present invention is directed to a method for producing an uncatalyzed substrate growth graphene, wherein the carbon-

In one embodiment of the present invention, the present invention relates to a method for the production of an uncatalyzed substrate growth graphene, wherein the carbon-containing gas supply comprises a concentration distribution of the carbon-containing gas in the substrate layer, Growing graphene in a direction parallel to the surface of the substrate as the concentration distribution is made non-uniform; The method comprising the steps of: Of course, in one embodiment of the present invention, the starting point of graphene growth may be nucleation of graphene at undesired locations as well as at locations to be presented in the present invention, Can be understood as neglecting the nucleation of graphene generated in the graphene.

In one embodiment of the present invention,

a. Positioning a substrate having a substrate layer thereon, and

b. Supplying carbon-containing gas and performing low-pressure chemical vapor deposition (LPCVD), and

c. Growing graphene on the substrate layer in the absence of a catalyst layer; The method comprising the steps of:

In one embodiment of the present invention, the present invention comprises a substrate with a substrate layer and a graphene formed by the method of making the non-catalyst substrate growth graphene.

'' __

Non-catalytic substrate growth

In one embodiment of the present invention, the present invention provides a process for producing a carbon-containing gas, comprising the steps of: supplying a carbon-containing gas; supplying a carbon-containing gas from the gas supply unit; And a heating device arranged to totally and / or partially heat an area of the substrate having the substrate layer, characterized in that it comprises a substrate to provide.

In one embodiment of the present invention, the present invention provides a gas supply system comprising: a gas supply unit for supplying a carbon-containing gas;

A heating device arranged to locally heat a region of a substrate having a substrate layer; The present invention also provides an apparatus for manufacturing a non-catalyst substrate growth graphene.

A heating device arranged to heat an area of a substrate having a substrate layer; The present invention also provides an apparatus for manufacturing a non-catalyst substrate growth graphene.

In one embodiment of the present invention, the present invention comprises a gas flow regulator (gas supply regulator) connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout. To provide a pin manufacturing apparatus.

In one embodiment of the invention, the carbon-containing gas may comprise an inert gas. In addition, in one embodiment of the present invention, the carbon-containing gas may further comprise hydrogen gas.

In one embodiment of the present invention, the gas ejection portion includes a nozzle portion for ejecting carbon-containing gas.

In one embodiment of the present invention, the gas ejection portion includes a storage portion in which the carbon-containing gas is accommodated, and a nozzle portion for ejecting the carbon-containing gas.

In an embodiment of the present invention, the shape of the nozzle portion may include, but is not limited to, a shape selected from a circle, a rectangle, a rectangle, an elongated circle, an elongated rectangle, and an elongated rectangle.

In one embodiment of the invention, the gas ejector may comprise a reservoir in which the carbon-containing gas is contained, and a piezo flow control system for controlling the flow rate of the carbon-containing gas.

In one embodiment of the invention, the gas ejector may comprise a reservoir in which the carbon-containing gas is contained, and a solenoid flow rate control system for controlling the flow rate of the carbon-containing gas.

In one embodiment of the present invention, the gas ejector comprises a reservoir in which the carbon-containing gas is contained, a heating portion for heating the carbon-containing gas to a constant temperature, and a piezo flow rate control system for controlling the flow rate of the carbon- .

In one embodiment of the present invention, the gas ejector comprises a reservoir in which the carbon-containing gas is contained, a heating portion for heating the carbon-containing gas to a constant temperature, and a solenoid flow rate control system for controlling the flow rate of the carbon- .

In an embodiment of the present invention, the gas ejecting portion is provided in a form including a region corresponding to a region of the substrate having the substrate layer.

In an embodiment of the present invention, the heating device is provided in a form including a region corresponding to a region of the substrate having the substrate layer.

In one embodiment of the present invention, the apparatus for producing a non-catalyst substrate growth graphene comprises (1). Gas spouting part, (2). A substrate having a substrate layer, (3). (1) to (3), which are constituted by a heating device, and a heating device.

In one embodiment of the present invention, the outer portion of the apparatus for non-catalytic substrate growth graphene production is characterized by comprising an exhaust device.

In one embodiment of the present invention, the exhaust system can be used to easily evacuate the gas remaining inside the outer portion of the non-catalyst substrate growth graphene production apparatus to prevent the incorporation of impurity gases in the production of the non-catalyst substrate growth graphene .

In one embodiment of the present invention, the outer periphery of the non-catalyst substrate growth graphene fabrication apparatus is provided with a vacuum holding device for holding the inside of the apparatus for manufacturing a non-catalyst substrate growth graphene at a low pressure degree of vacuum (for example, several tens to several hundreds of mTorr) .

In one embodiment of the present invention, the vacuum holding device may mean a pumping system, but is not limited in terms of a vacuum holding device.

In an embodiment of the present invention, the vacuum holding device is not provided as an exhaust device but may be separately provided in an apparatus for manufacturing a non-catalyst substrate growth graphene, May mean a device that maintains the interior of the device at low pressure (e.g., tens to hundreds of mTorr).

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may be characterized by the use of a load-locked chamber method

In one embodiment of the present invention, the exterior portion of the non-catalytic substrate growth graphene production apparatus can be coupled with a method selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system.

In one embodiment of the present invention, the apparatus for producing a non-catalyst substrate growth graphene can be configured to adjust the position of a substrate having a substrate layer.

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; of

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; of

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, Growing graphene on the substrate layer; , &Lt; / RTI &

Wherein the steps are controlled by a controller of a non-catalyst substrate growth graphene manufacturing apparatus.

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Growing step; , &Lt; / RTI &

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer And growing the graphene on the substrate layer without forming the graphene layer; of

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Growing graphene; of

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer Growing graphene on a substrate layer in the absence of the substrate; , &Lt; / RTI &

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Growing graphene; , &Lt; / RTI &

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, And growing the graphene on the substrate layer; of

In one embodiment of the present invention,

Providing a substrate layer on a substrate; And

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene The method comprising the steps of: of

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, Growing graphene on the substrate layer; , &Lt; / RTI &

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene ; , &Lt; / RTI &

In one embodiment of the present invention, the controller of the apparatus for producing a non-catalyst substrate growth graphene may be provided in the form of a computer, but the present invention is not limited thereto.

In one embodiment of the present invention, the control device of the apparatus for non-catalytic substrate growth graphene production may be adopted as a basis for connection with the non-catalyst substrate growth graphene production apparatus by wire, but the present invention is not limited thereto, And wirelessly.

In an embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene comprises a cooling section for cooling an area of the non-catalyst substrate growth graphene. The cooling unit is an apparatus for uniformly growing the formed graphene and uniformly arranging the graphene. Since the rapid cooling may cause cracking of the graphene, it is preferable to cool the cooling unit at a constant speed. For example, it is possible to use a method such as natural cooling. The natural cooling is simply a removal of the heat source used for heating, and thus it is possible to obtain a sufficient cooling rate even by removing the heat source.

In one embodiment of the present invention, the cooling section is characterized in that it is gradually cooled at a constant speed so that the graphene can uniformly grow and be uniformly arranged.

In one embodiment of the present invention, the cooling section is characterized in that after the LPCVD process, the cooling process is performed on the formed graphene.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene is characterized in that it is comprised in a process platform that facilitates the manufacture of a functional device exhibiting enhanced reliability with respect to a semiconductor material-based device.

In one embodiment of the present invention, an apparatus for manufacturing a non-catalytic substrate growth graphene is provided that facilitates the fabrication of a functional device exhibiting enhanced reliability with respect to semiconductor material-based devices produced by "bottom-up & And is included in the process platform.

In one embodiment of the present invention, the control device of the non-catalytic substrate growth graphene production device may be included in a control device of the process platform that facilitates the manufacture of a functional device exhibiting enhanced reliability with respect to the semiconductor material- have. In one embodiment of the present invention, the above description may mean that the process manager is a system that performs overall equipment control of the process platform in one place.

In one embodiment of the invention, the gas supply part is characterized by supplying carbon-containing gas.

In one embodiment of the present invention, the gas supply portion may supply a carbon-containing gas and an inert gas, but is not limited thereto. For example, in one embodiment of the present invention, the gas supply unit may further supply hydrogen gas.

In an embodiment of the present invention, the gas ejector may be supplied with a carbon-containing gas, and the carbon-containing gas may be ejected by heating the carbon-containing gas to a predetermined temperature such that activated carbon is formed.

In one embodiment of the present invention, the gas ejection portion is connected to the gas supply portion through the gas supply regulator by the gas connection tube.

In one embodiment of the present invention, the gas supply regulator can easily control the amount of gas supplied from the gas supply to the gas spout.

In one embodiment of the present invention, the gas supply regulator may include a solenoid valve to easily control the amount of gas supplied to the gas ejector. In one embodiment of the invention, the solenoid may refer to an electronically controlled solenoid.

In one embodiment of the present invention, the gas supply regulator may include a pressure control valve to easily control the pressure of the gas supplied to the gas ejection portion. Here, the pressure control valve means a valve that maintains a constant pressure in the gas connection pipe, controls the maximum pressure, or regulates the pressure of the gas supplied to the gas ejection portion.

In one embodiment of the present invention, the gas supply regulator may include a flow control valve to easily control the amount of gas supplied to the gas ejector. Here, the flow control valve means a valve for controlling the flow rate of the gas.

In one embodiment of the present invention, the gas supply regulator can appropriately control important factors such as the supply pressure of the carbon-containing gas, the supply range, the supply amount, and the like.

In one embodiment of the present invention, the gas ejector may include an apparatus for appropriately adjusting the environment of the gas circuit connected to the inside of the apparatus for manufacturing a non-catalyst substrate growth graphene. Here, the apparatus for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene producing apparatus includes at least one apparatus, that is, devices connected to the inside of the non-catalyst substrate growing graphene producing apparatus It can be interpreted as performing the function of appropriately adjusting the environment of the gas circuit. Further, in one embodiment of the present invention, the apparatus (or devices) for appropriately adjusting the environment of the gas circuit connected to the inside of the apparatus for manufacturing a non-catalyst substrate growth graphene may be controlled And can be configured to be controlled by a device.

In one embodiment of the invention, the gas ejector may comprise a solenoid flow rate control system.

In one embodiment of the present invention, the solenoid flow rate control system may include an apparatus for controlling the flow rate of the gas in a small amount, which may consist of a very small hole and a device for opening and closing it.

In one embodiment of the present invention, the solenoid flow rate control system may include a small aperture, a device for opening and closing it, and a needle for controlling a small amount of gas flow rate.

In one embodiment of the present invention, the solenoid flow control system can be controlled by a control device of the non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention, the solenoid flow rate control system may have the following operation sequence. (One). Voltage application (current connection), (2). Solenoid valve module operation, (3). Piston module operation, (4). Needle opening, (5). (1) to (5), which are constituted by a gas flow and a gas flow.

In one embodiment of the present invention, the solenoid flow rate control system may have the following operation sequence. (One). Voltage interruption (current interruption), (2). Solenoid valve module stop, (3). Piston module stop, (4). Needle closure, (5). (1) to (5) in which the gas flow is stopped and the gas flow is stopped.

In one embodiment of the present invention, the solenoid may include a configuration that moves the plunger within the coil when the current is applied to the coil, with mechanical movement.

In one embodiment of the present invention, the solenoid flow rate control system can sense the change in gas due to repetitive operation and perform accurate flow rate control considering the difference. This precise flow control is performed by detecting the change in gas due to the repeated operation of the solenoid flow rate control system and determining the result after analysis in the control apparatus of the non-catalyst substrate growth graphene manufacturing apparatus. In the control apparatus of the non- It can be said to perform precise flow control considering the difference.

In one embodiment of the present invention, detecting a change in gas may mean detecting a change in pressure of the gas ejected to the pressure measurement sensor in real time and / or intermittently.

In one embodiment of the present invention, the solenoid flow rate control system can appropriately adjust important factors such as the amount of carbon-containing gas supplied, and the like.

In one embodiment of the present invention, the gas ejection portion may comprise a piezo flow control system. In one embodiment of the invention, the piezo flow control system may comprise a device comprising a piezo actuator (e.g., piezo electric actuator).

In one embodiment of the present invention, a piezoelectric actuator (e.g., a piezoelectrical actuator) includes a piezo ceramic layer and an electrode layer, wherein the piezo ceramic layer and the electrode layer are arranged such that one layer is on top of one layer, As shown in FIG.

In one embodiment of the invention, the piezo actuator (e.g., piezoelectric actuator) may include, but is not limited to, a piezo crystal material.

In one embodiment of the present invention, the piezo flow control system is capable of sensing the change in gas due to repeated operation and precise flow control taking into account the difference. This precise flow control is performed by detecting the change of the gas due to the repeated operation of the piezo flow control system and judging it by the control device of the non-catalyst substrate growth graphene manufacturing apparatus, It can be said to perform precise flow control considering the difference.

In one embodiment of the present invention, the piezo flow control system may have the following sequence of operations. (One). Electric charging (or application of voltage), (2). Piezo actuator operation, (3). Hydraulic coupler hydraulic pressure increase, (4). Pressure control valve open, (5). Needle opening, (6). (1) to (6), which are constituted by a gas flow, a gas flow, and the like.

In one embodiment of the present invention, the piezo flow control system may have the following sequence of operations. (One). Electric discharge (or interruption of voltage), (2). Piezo actuator stop, (3). Hydraulic coupler hydraulic pressure reduction, (4). Pressure control valve closed, (5). Needle closure, (6). (1) to (6) which consist of stopping the gas flow and stopping the gas flow.

In one embodiment of the present invention, the piezo flow control system may be controlled by a control device of the non-catalyst substrate growth graphene production apparatus.

In one embodiment of the invention, the piezo flow control system is able to properly control critical elements such as the amount of carbon-containing gas supplied, and the like.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may be configured to transport the wafer or substrate from a storage device to a storage device, It is well known to a person skilled in the art that a mechanism (device) for carrying out the transfer from the transporting device to the transporting and storing device is provided in the non-catalyst substrate growing graphene producing device, and therefore it may not be described in detail in the present invention. Here, the storage device may refer to a storage device in which a wafer or a substrate is stored and transferred to the wafer transfer system.

In one embodiment of the present invention, an apparatus for manufacturing a non-catalyst substrate growth graphene includes a mechanism for bringing a wafer or a substrate into an apparatus for manufacturing a non-catalyst substrate growth graphene and carrying the wafer or the substrate out of the apparatus for manufacturing a non- (Apparatus) for bringing the wafer or the substrate into the non-catalyst substrate growing graphene manufacturing apparatus and carrying it out of the apparatus for producing the non-catalyst substrate growing graphene, It is well known to those skilled in the art and thus may not be described in detail in the present invention.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may additionally include a plurality of devices, but is basically provided with a carbon-containing gas and performs low pressure chemical vapor deposition (LPCVD) radicals on the surface of the substrate layer and heteroepitaxial growth type of Van der Waals type nucleation on the surface of the substrate layer in the form of a heteroepitaxial growth type, To grow graphene.

In one embodiment of the present invention, the apparatus for producing a non-catalytic substrate growth graphene may additionally include a plurality of devices, but is basically provided with a carbon-containing gas and performs low pressure chemical vapor deposition (LPCVD) the growth of graphene on the substrate layer in the absence of a catalyst layer with a growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, .

''

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

And a non-catalytic substrate growth graphene production apparatus.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

A heating device arranged to totally and / or partially heat an area of a substrate having a substrate layer; To

And a non-catalytic substrate growth graphene production apparatus.

In one embodiment of the present invention,

A gas supply regulator connected to the gas supply to regulate the flow rate of gas supplied from the gas supply to the gas spout; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the invention, the gas supply regulator may be characterized as comprising a solenoid valve.

In one embodiment of the present invention, the gas ejector includes a nozzle portion for ejecting a carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a nozzle portion for ejecting a carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a piezo flow control system for controlling the flow rate of carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including a solenoid flow control system for controlling the flow rate of carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

A heating section for heating the carbon-containing gas to a predetermined temperature, and

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In an embodiment of the present invention, the heating unit included in the gas ejecting unit may include a heating wire, but the present invention is not limited thereto.

In one embodiment of the present invention,

Including a region corresponding to a region of a substrate having a substrate layer; .

In one embodiment of the present invention,

Adjusting the position of the substrate having the substrate layer; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention,

A cooling section for gradually cooling at a constant speed so that the non-catalyst substrate growth grains can be uniformly grown and uniformly arranged; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention, the present invention is embodied in an apparatus for manufacturing a non-catalytic substrate growth graphene; And a process platform.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including a solenoid flow control system; And a gas discharge portion.

In one embodiment of the present invention,

The solenoid flow control system

Controlling the flow rate of the carbon-containing gas; .

In one embodiment of the present invention,

The solenoid flow control system being controlled by a controller of the non-catalyst substrate growth graphene production apparatus; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including a piezo flow control system equipped with a piezo electric actuator; And a gas discharge portion.

In one embodiment of the present invention,

Piezoelectric actuators

A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; .

In one embodiment of the present invention,

The piezo flow control system being controlled by a controller of the non-catalyst substrate growth graphene production apparatus; .

In one embodiment of the present invention,

The piezo flow control system

Controlling the flow rate of the carbon-containing gas; .

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a substrate layer, and

An outer surface of a non-catalytic substrate growth graphene production apparatus accommodating a heating device; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention,

Non-catalytic substrate growth The outer part of the graphene production apparatus comprises an exhaust device; .

In one embodiment of the present invention,

Noncatalytic Substrate Growing The graphene manufacturing apparatus outer periphery is provided with an exhaust device and a vacuum holding device; .

In one embodiment of the present invention,

Wherein the outer part of the non-catalyst substrate growing graphene manufacturing apparatus has a vacuum holding device for holding the inside of the non-catalyst substrate growing graphene manufacturing apparatus at a low pressure vacuum; .

In one embodiment of the present invention,

Non-Catalytic Substrate Growth The graphene fabrication device exterior

Connected to a load-locked chamber method; .

In one embodiment of the present invention,

Non-Catalytic Substrate Growth The graphene fabrication device exterior

Atmospheric pressure wafer transfer system, vacuum wafer transfer system, coupled with the method of choice; .

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; The method comprising the steps of:

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

''

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

And a non-catalytic substrate growth graphene production apparatus.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

And a non-catalytic substrate growth graphene production apparatus.

In one embodiment of the present invention,

In one embodiment of the invention, the gas supply regulator may comprise a solenoid valve.

In one embodiment of the present invention,

Comprising a nozzle portion for ejecting a carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a nozzle portion for ejecting a carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In an embodiment of the present invention, the heating unit provided in the gas ejection unit may be characterized in that the carbon-containing gas is heated to a predetermined temperature so that activated carbon is formed.

In one embodiment of the present invention, the heating unit heats the carbon-containing gas to a predetermined temperature, wherein heating the carbon-containing gas to a predetermined temperature is not problematic in use of the carbon- .

In one embodiment of the present invention, the heating unit included in the gas ejection unit may include a heat wire, but is not limited thereto.

In one embodiment of the present invention, the heating portion provided in the gas ejection portion can be controlled by a control device of the apparatus for manufacturing a non-catalyst substrate growth graphene.

In one embodiment of the present invention,

A device for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene manufacturing apparatus; . Here, the apparatus for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene producing apparatus includes at least one apparatus, that is, devices connected to the inside of the non-catalyst substrate growing graphene producing apparatus It can be interpreted as performing the function of appropriately adjusting the environment of the gas circuit.

In one embodiment of the present invention,

In one embodiment of the present invention, the present invention includes a control apparatus for an apparatus for producing a non-catalytic substrate growth graphene; And a non-catalyst substrate growth graphene production apparatus. In one embodiment of the present invention, the control device may be provided in a form of a computer, but is not limited thereto. Further, in one embodiment of the present invention, the control device may be connected to the non-catalyst substrate growth graphene production apparatus by wire, but is not limited thereto, and may be connected by wire or wirelessly .

In one embodiment of the present invention, the heating device is controlled by a control device of an apparatus for producing non-catalytic substrate growth grains; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including a solenoid flow control system; And a gas discharge portion.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including a piezo flow control system including a piezoelectrical actuator; And a gas discharge portion.

In one embodiment of the present invention,

Piezoelectric actuators

In one embodiment of the present invention,

The piezo flow control system being controlled by a controller of the non-catalytic substrate growth graphene production apparatus; .

In one embodiment of the present invention, the present invention includes an apparatus for appropriately adjusting the environment of a gas circuit connected to the inside of an apparatus for manufacturing a non-catalyst substrate growth graphene; And a gas discharge portion. Here, the apparatus for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene producing apparatus includes at least one apparatus, that is, devices connected to the inside of the non-catalyst substrate growing graphene producing apparatus It can be interpreted as performing the function of appropriately adjusting the environment of the gas circuit.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention, a piezo flow control system for controlling the flow rate of carbon-

a. Ease of assembly with a gas circuit, and

b. Gas leakage to the outside of the gas circuit is blocked,

, It can be assembled with a gas circuit having the form of a tight threaded portion with at least one form of a tight threaded portion in the outer portion of the piezo flow control system.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Including a solenoid flow control system for controlling the flow rate of carbon-containing gas; And a gas discharge portion.

In one embodiment of the present invention,

A device for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene manufacturing apparatus; And a gas discharge portion. Here, the apparatus for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene producing apparatus includes at least one apparatus, that is, devices connected to the inside of the non-catalyst substrate growing graphene producing apparatus It can be interpreted as performing the function of appropriately adjusting the environment of the gas circuit.

In one embodiment of the invention, a solenoid flow control system for controlling the flow rate of the carbon-containing gas

a. Ease of assembly with a gas circuit, and

b. Gas leakage to the outside of the gas circuit is blocked,

, A solenoid flow control system can be assembled with a gas circuit having the form of a tight threaded portion with at least one form of a dense threaded portion in the outer portion of the solenoid flow control system.

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a substrate layer, and

An outer surface of a non-catalytic substrate growth graphene production apparatus accommodating a heating device; And a non-catalyst substrate growth graphene production apparatus. Here, the word 'accept' means 'accept something'.

In one embodiment of the present invention,

Non-Catalytic Substrate Growth The graphene fabrication device exterior

Connected to a load-locked chamber method; .

In one embodiment of the present invention,

Non-Catalytic Substrate Growth The graphene fabrication device exterior

In one embodiment of the present invention, the apparatus for manufacturing a non-catalytic substrate growth graphene comprises a non-catalytic substrate growth graphene manufacturing apparatus described as being selected from the following <A>, , <C>, < Respectively.

<A>

In one embodiment of the present invention,

A gas supply unit;

A gas ejection portion;

A substrate having a substrate layer; And

A heating device arranged to locally heat a region of a substrate having a substrate layer; The present invention also provides an apparatus for producing a non-catalyst substrate growth graphene.

In one embodiment of the present invention,

Gas supply, and

A gas supply regulator, and

A gas ejection portion, and

In a device configuration including a heating device,

Placing a substrate having a substrate layer therein, and performing a method of manufacturing the non-catalyst substrate grown graphene; And a non-catalyst substrate growth graphene production apparatus.

<C>

In one embodiment of the present invention,

A gas ejection portion, and

In a device configuration including a heating device,

<D>

In one embodiment of the present invention,

Positioning a substrate having a substrate layer inside the device, performing a method of manufacturing a non-catalyst substrate grown graphene, and then placing the graphene-formed substrate outside the device; Wherein the apparatus comprises an apparatus for producing a non-catalytic substrate growth graphene selected from the group consisting of <A>, , <C>, and <D> Respectively. Also, in an embodiment of the present invention, the present invention is characterized by including an apparatus for manufacturing a non-catalyst substrate growth graphene selected from the above-described <A>, , <C>, and <D> As shown in FIG.

<A>

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

In one embodiment of the present invention,

Gas supply, and

A gas supply regulator, and

A gas ejection portion, and

In a device configuration including a heating device,

Positioning a substrate having a substrate layer inside the device, performing a method of manufacturing a non-catalyst substrate grown graphene, and then placing the graphene-formed substrate outside the device; And a non-catalyst substrate growth graphene production apparatus.

<C>

In one embodiment of the present invention,

A gas ejection portion, and

In a device configuration including a heating device,

<D>

In one embodiment of the present invention,

<A>

In one embodiment of the present invention,

Gas supply, and

A gas supply regulator, and

A gas ejection portion, and

In a device configuration including a heating device,

a. Positioning a substrate having a substrate layer inside the apparatus, and

b. Performing a method of manufacturing a non-catalyst substrate grown graphene, and

c. Positioning the graphene-formed substrate outside the apparatus; The present invention also provides an apparatus for producing a non-catalyst substrate growth graphene.

In one embodiment of the present invention,

A gas ejection portion, and

In a device configuration including a heating device,

a. Positioning a substrate having a substrate layer inside the apparatus, and

<C>

In one embodiment of the present invention,

<D>

In one embodiment of the present invention,

Performing a method of manufacturing a non-catalyst substrate grown graphene; Wherein the apparatus comprises an apparatus for producing a non-catalytic substrate growth graphene selected from the group consisting of <A>, , <C>, and <D> Respectively. Also, in an embodiment of the present invention, the present invention is characterized by including an apparatus for manufacturing a non-catalyst substrate growth graphene selected from the above-described <A>, , <C>, and <D> As shown in FIG.

'' ___

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

A heating device arranged to heat an area of a substrate having a substrate layer; The present invention also provides an apparatus for producing a non-catalyst substrate growth graphene.

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

A heating device arranged to totally and / or partially heat an area of a substrate having a substrate layer; The present invention also provides an apparatus for producing a non-catalyst substrate growth graphene.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

Comprising a nozzle portion for ejecting a carbon-containing gas; .

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention,

A device for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene manufacturing apparatus; .

In one embodiment of the present invention,

In one embodiment of the present invention, the present invention includes a control apparatus for an apparatus for producing a non-catalytic substrate growth graphene; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention, the present invention provides a method of adjusting the position of a substrate comprising a substrate layer; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention, the present invention includes a cooling unit for gradually cooling the graphene at a constant speed so that the graphene can uniformly grow and be uniformly arranged; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the invention, the piezo electric actuator

In one embodiment of the present invention, the piezo flow control system is controlled by a controller of the non-catalyst substrate growth graphene production apparatus; .

In one embodiment of the present invention, the present invention includes an apparatus for appropriately adjusting the environment of a gas circuit connected to the inside of an apparatus for manufacturing a non-catalyst substrate growth graphene; And a gas discharge portion.

In one embodiment of the present invention,

A reservoir in which a carbon-containing gas is contained, and

In one embodiment of the present invention,

A gas ejection portion, and

A substrate having a substrate layer, and

In one embodiment of the present invention, the outer portion of the non-catalyst substrate growth graphene production apparatus includes an exhaust device and a vacuum holding device; .

In one embodiment of the present invention, the outer portion of the non-catalyst substrate growth graphene production apparatus is connected to a load-locked chamber method; .

In one embodiment of the present invention, the exterior portion of the non-catalyst substrate growth graphene production apparatus is coupled to a method selected from an atmospheric pressure wafer transfer system, a vacuum wafer transfer system, .

In one embodiment of the present invention,

A gas supply unit for supplying a carbon-containing gas;

In one embodiment of the present invention,

Gas supply, and

A gas supply regulator, and

A gas ejection portion, and

In a device configuration including a heating device,

a. Positioning a substrate having a substrate layer inside the apparatus, and

In one embodiment of the present invention,

A gas ejection portion, and

In a device configuration including a heating device,

a. Positioning a substrate having a substrate layer inside the apparatus, and

In one embodiment of the present invention,

In one embodiment of the present invention, the present invention is directed to a method of fabricating a non-catalytic substrate growth graphene; And a non-catalyst substrate growth graphene production apparatus.

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In one embodiment of the present invention,

Supplying and discharging a carbon-containing gas; And

Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And

In one embodiment of the present invention,

a. Positioning a substrate having a substrate layer inside the apparatus, and

c. Positioning the graphene-formed substrate outside the apparatus; , &Lt; / RTI &

In one embodiment of the present invention,

a. Positioning a substrate having a substrate layer thereon, and

'' ___

Here, "to be described" means "to be enumerated or described and described as it is with the contents and features of the object or process".

The present invention has been described as an upper group, a group, a range of a group, a lower range of a group, and an inclusion range of a group.

Advantages and features of the present invention and methods for accomplishing the same will become apparent with reference to the embodiments described in detail in the foregoing. However, the present invention is not limited to the embodiments described in detail, but may be embodied in various forms.

In one embodiment of the present invention, generally known methods, generally known mathematical formulas, generally known laws, generally known descriptions, generally known sequences and generally known techniques, The present invention can be applied to an embodiment of the present invention which is widely disclosed without relying on the use of the present invention.

In one embodiment of the present invention, methods, orders, and techniques that are known in the art, such as those specifically known to those skilled in the art, are not intended to be applied to the embodiments of the present invention.

Those skilled in the art will readily appreciate that a person skilled in the art will be able to carry out the invention without departing from the scope of the present invention, It will be appreciated that the invention is feasible.

The terms and expressions which have been employed herein are used as terms of the detailed description of the invention but are not intended to be limiting and are not intended to limit the terms or expressions of the described or illustrated features. However, various modifications are possible within the scope of the present invention. It is, therefore, to be understood that the exemplary embodiments and optional features, as well as modifications and variations of the concepts described herein, may be resorted to by the prior art and the like, even though the invention has been described by some preferred embodiments, Variations may be considered within the scope of the invention as defined by the appended claims.

In one embodiment of the present invention, the specific embodiments provided are illustrative of useful embodiments of the present invention, and those of ordinary skill in the art should understand that changes may be made to the elements, As will be appreciated by those skilled in the art.

Those skilled in the art will appreciate that in one embodiment of the invention particular embodiments of the invention may be used including various optional configurations and methods and steps.

The specific nomenclature of the components described or illustrated herein may be resorted to as an example, insofar as those of ordinary skill in the art to which the invention pertains may specifically refer to the specific names of the same components. Accordingly, the specific names of the components described or illustrated herein should be understood based on the overall description of the invention as set forth.

In one embodiment of the present invention, it is contemplated that combinations of the described or described groups of the present invention may be used to practice the present invention, if not otherwise stated.

In one embodiment of the present invention, combinations of the groups described or described that may be included in a higher group of the present invention may be used within a higher group of the present invention, unless otherwise stated.

In an embodiment of the present invention, individual values that may be included in the scope of the group described or described above as well as when the scope of the group described or described is given in detail may be used in the scope of the above described or described group.

In an embodiment of the present invention, combinations of groups that can be included in the scope of the groups described or described above, as well as when the scope of the groups described or described is given in detail, may be used in the scope of the groups described or described above .

In an embodiment of the present invention, when a range of the described or described group is given in detail, a group which can be included in the range of the above described or described group can be used in the range of the above described or described group.

In one embodiment of the present invention, equivalently known components or variants of the components described or illustrated can be used to practice the invention without intending to be mentioned otherwise.

In one embodiment of the present invention, the contents of the present invention have been described at the level of those skilled in the art.

In one embodiment of the invention, the description set forth in the context of groups, ranges of groups, sub-ranges of groups, and ranges of groups can be realized within the scope of the description of a possible higher group of the invention.

Those skilled in the art will appreciate that the various ways of practicing the invention may be employed in the practice of the invention without undue experimentation.

Further, those skilled in the art will appreciate that those skilled in the art can make and use the embodiments of the present invention in the context of the present invention, which is fully capable of describing the group, the scope of the group, the sub-scope of the group, You can see that it can be.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the invention is not limited to the disclosed exemplary embodiments. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

It is also to be understood that the present invention which is properly illustrated schematically is merely illustrative and that those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention . Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

In one embodiment of the present invention, methods known equivalently to the described methods may be used in an embodiment of the present invention without intending to do so. .............

100: substrate with a substrate layer
300: Carbon-containing gas
500: Grain Pins
1001: Graphene device
1002: Graphene
1003: a substrate provided with a substrate layer
2000: substrate
2100: substrate layer
5100A, 5100B: Non-catalyst substrate growth graphene manufacturing equipment
5110: Growth of non-catalytic substrate
5111: Substrate position
5120: gas supply part
5121, 5122, 5123: gas supply device
5131, 5132: gas supply regulator
5141, 5142, 5143, 5144,
5151, 5152, 5153, 5154: Heating device
5180, 5181: Vacuum holding device and exhaust device
5190: Control device of non-catalytic substrate growth graphene manufacturing equipment
5198: Wafer (substrate) transport system
6100A, 6200A: Piezo flow control system
6110, 6210: Piezoelectric actuator module
6120, 6220: accumulator
6130: Needle operation amplifier
6140: Needle
6250: Coupling module
6260: Control Valve Module
6270: Nozzle module
7100A: Solenoid flow control system
7110: Solenoid module (or solenoid valve module)
7120: accumulator
7130: Piston module
7140: Needle

Claims

a. A substrate having a substrate layer formed thereon,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. A substrate having a substrate layer formed thereon,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
The carbon-containing gas supply may cause grains to grow in a direction parallel to the surface of the substrate, as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- To do; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 1 to 2,
Further comprising cooling the graphene grown on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
c. The substrate being sequentially loaded into the deposition chamber and the LPCVD chamber using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
c. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
d. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Loading a substrate into a deposition chamber to form a substrate layer on the substrate; And
b. Loading the substrate into a CMP chamber and performing a CMP process on the substrate layer formed on the substrate; And
c. Selectively etching the substrate layer formed on the substrate by sequentially loading the substrate into chambers for performing selective etching; And
d. Loading the substrate into an LPCVD chamber and supplying a carbon-containing gas to form an uncatalyzed substrate growth graphene by LPCVD; , &Lt; / RTI &
e. The substrate being sequentially loaded using a load-locked chamber; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing LPCVD, and
d. In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing LPCVD, and
d. A heteroepitaxial growth type of Van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing hydrocarbon radicals on the surface of the substrate layer, To graphene, and
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Forming a substrate layer on the substrate, and
b. Uniformly configuring the concentration distribution of the carbon-containing gas in the substrate layer, and
c. Performing LPCVD, and
d. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Forming a substrate layer on the substrate, and
b. Increasing the concentration of the carbon-containing gas in a specific region of the substrate layer in the substrate layer, and
c. Performing LPCVD, and
d. Growing into a graphene in a specific region of the substrate layer with a growth type of Van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing and hydrocarbyl radicals , And
e. The growth direction of graphene is such that graphene grows in a parallel direction in a specific region of the substrate layer, and
f. Finally including the step of forming graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Graphene which grows in a first direction parallel to the surface of the substrate and which is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth grains described in claim 3,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene according to claim 3; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Graphene which grows in a first direction parallel to the surface of the substrate and which is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphene according to claim 4,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene according to claim 4; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

A graphene which grows in a first direction parallel to the surface of the substrate and is in direct contact with the substrate layer is produced by the method of manufacturing the noncatalyst substrate growth graphene according to claim 5,
Preparing surface graphenes growing in a second direction parallel to the surface from the graphene and in direct contact with the substrate layer by the method of manufacturing the noncatalyst substrate growth graphene according to claim 5; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The method according to any one of claims 15 to 17,
Further comprising cooling said graphene,
Further comprising cooling said planar graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

With non-catalytic substrate growth graphene,
The non-catalyst substrate growth graphene directly contacts the surface of the substrate layer,
The crystal grain size in the first direction parallel to the surface of the non-catalyst substrate growth graphene is larger than the crystal grain size in any other direction parallel to the surface of the non-catalyst substrate growth graphene,
The grains in the first direction of the non-catalyst substrate growth grains are larger than the grains in the direction perpendicular to the surface of the grains; of
Non-catalytic substrate growth characterized by graphene

With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
Wherein said non-catalytic substrate growth graphene has a grain boundary along a first direction parallel to said surface,
The corresponding noncatalytic substrate growth graphene having a grain boundary along a second direction parallel to the surface; of
Non-catalytic substrate growth characterized by graphene

The method of claim 20,
The first direction and the second direction being orthogonal; of
Non-catalytic substrate growth characterized by graphene

With non-catalytic substrate growth graphene,
The noncatalytic substrate growth graphene directly contacts the surface of the substrate layer,
The non-catalytic substrate-grown graphene has a plurality of grain boundaries along a first direction parallel to the surface,
The corresponding noncatalytic substrate growth graphene having a plurality of crystal grain boundaries along a second direction parallel to the surface; of
Non-catalytic substrate growth characterized by graphene

23. The method of claim 22,
The first direction and the second direction being orthogonal; of
Non-catalytic substrate growth characterized by graphene

A method of manufacturing an electronic component, characterized by comprising a method of manufacturing an uncatalyzed substrate growth graphene according to claim 1, claim 2, claim 15, claim 16 or claim 17

A method for manufacturing an electronic component, characterized by comprising the manufacturing method of the non-catalyst substrate grown graphene according to claim 1, claim 2, claim 15, claim 16 or claim 17 part

Characterized in that it comprises a non-catalytic substrate growth graphene according to claim 19, claim 20 or claim 22

The graphene obtained by the process for producing the non-catalyst substrate grown graphene according to claim 1 or 2,

An electronic device comprising the graphene according to claim 27

a. Positioning a substrate provided with a substrate layer,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Including growing graphene on a substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate provided with a substrate layer,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate provided with a substrate layer,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. A heteroepitaxial growth type of van der Waals type nucleated on the surface of a substrate layer and adsorbing and diffusing compound radicals containing carbon and a catalyst layer Including growing graphene on a substrate layer in the absence of the substrate; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate provided with a substrate layer,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In a growing type of van der Waals type that occurs as a nucleus on the surface of a substrate layer, adsorbing, diffusing, and compound radicals containing carbon are formed on the substrate layer in the absence of a catalyst layer Including growing graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate provided with a substrate layer,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In the heteroepitaxial growth type of Van der Waals type nucleated on the surface of the substrate layer and adsorbing, diffusing and decomposing decomposition products of carbon-containing compounds, Including growing graphene on a substrate layer in the state of < RTI ID = 0.0 > of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate provided with a substrate layer,
b. A carbon-containing gas is supplied and low-pressure chemical vapor deposition (LPCVD) is performed,
c. In the growth type of Van der Waals type which is nucleated on the surface of the substrate layer, adsorption, diffuse and decomposition of the decomposition product of the carbon-containing compound, graphene ; &Lt; / RTI > of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Supplying and discharging a carbon-containing gas, and
Performing Low-Pressure Chemical Vapor Deposition (LPCVD), and
In the heteroepitaxial growth type of Van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, And growing graphene on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Supplying and discharging a carbon-containing gas, and
Performing Low-Pressure Chemical Vapor Deposition (LPCVD), and
In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Including the step of growing; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

37. The method of any one of claims 29-36,
The carbon-containing gas supply
The concentration distribution of the carbon-containing gas in the substrate layer is made non-uniform,
Controlling the direction of growth of graphene; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

37. The method of any one of claims 29-36,
The carbon-containing gas supply
The concentration of the carbon-containing gas is set to be high in a specific region of the substrate layer,
Grown to a graphene in a specific region of the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

37. The method of any one of claims 29-36,
The carbon-containing gas supply may cause grains to grow in a direction parallel to the surface of the substrate, as the concentration distribution of the carbon-containing gas in the direction parallel to the surface of the substrate among the concentration distribution of the carbon- To do; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

37. The method of any one of claims 29-36,
Further comprising cooling the graphene grown on the substrate layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

The graphene obtained by the production method of the non-catalyst substrate grown graphene according to any one of claims 29 to 36,

A method of manufacturing a substrate having a substrate layer and a graphene

A method of manufacturing an electronic component, characterized by comprising the method of manufacturing the non-catalyst substrate grown graphene according to any one of claims 29 to 36

An electronic device comprising the graphene according to any one of claims 41 to 42

A gas supply unit for supplying a carbon-containing gas;
A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;
A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And
A heating device arranged to heat an area of a substrate having a substrate layer; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

A gas supply unit for supplying a carbon-containing gas;
A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;
A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And
A heating device arranged to totally and / or partially heat an area of a substrate having a substrate layer; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

47. The method of any one of claims 45-46,
A gas supply regulator connected to the gas supply to regulate the flow rate of the gas supplied from the gas supply to the gas spout; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The gas-
Comprising a nozzle portion for ejecting a carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The gas-
A reservoir in which a carbon-containing gas is contained, and
Comprising a nozzle portion for ejecting a carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The gas-
A reservoir in which a carbon-containing gas is contained, and
Comprising a piezo flow control system for controlling the flow rate of carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The gas-
A reservoir in which a carbon-containing gas is contained, and
A heating section for heating the carbon-containing gas to a predetermined temperature, and
Comprising a piezo flow control system for controlling the flow rate of carbon-containing gas; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The gas-
A device for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene manufacturing apparatus; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The gas-
Including a region corresponding to a region of a substrate having a substrate layer; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
The heating device
Including a region corresponding to a region of a substrate having a substrate layer; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
Including a controller of a non-catalytic substrate growth graphene production apparatus; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
Adjusting the position of the substrate comprising the substrate layer; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

47. The method of any one of claims 45-46,
Including a cooling portion that slowly cools at a constant rate so that the graphene can grow uniformly and be uniformly arranged; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

46. A method of manufacturing a non-catalytic substrate growth graphene according to any one of claims 45 to 46, of
Characterized process platform

A reservoir in which a carbon-containing gas is contained, and
A heating section for heating the carbon-containing gas to a predetermined temperature, and
Including a piezo flow control system including a piezoelectrical actuator; of
The gas-

62. The method of claim 59,
The piezo electric actuator
A piezoelectric ceramic layer and an electrode layer, wherein the piezoelectric ceramic layer and the electrode layer are arranged so as to be shifted from each other such that another layer is positioned on top of one layer; of
The gas-

62. The method of claim 59,
The piezo flow control system
Controlled by a controller of a non-catalytic substrate growth graphene production apparatus; of
The gas-

62. The method of claim 59,
A device for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene manufacturing apparatus; of
The gas-

A reservoir in which a carbon-containing gas is contained, and
A heating section for heating the carbon-containing gas to a predetermined temperature, and
Including a solenoid flow control system for controlling the flow rate of carbon-containing gas; of
The gas-

65. The method of claim 63,
A device for appropriately adjusting the environment of the gas circuit connected to the inside of the non-catalyst substrate growing graphene manufacturing apparatus; of
The gas-

A gas ejection portion, and
A substrate having a substrate layer, and
An outer surface of a non-catalytic substrate growth graphene production apparatus accommodating a heating device; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

65. The method of claim 65,
Wherein the outer surface of the non-catalyst substrate growth graphene production apparatus includes an exhaust device and a vacuum holding device; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

65. The method of claim 65,
The outer periphery of the non-catalyst substrate growth graphene production apparatus
Connected to a load-locked chamber method; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

65. The method of claim 65,
The outer periphery of the non-catalyst substrate growth graphene production apparatus
Atmospheric pressure wafer transfer system, vacuum wafer transfer system, coupled with the method of choice; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

A gas supply unit for supplying a carbon-containing gas;
A gas spouting unit that receives the carbon-containing gas from the gas supply unit and ejects the carbon-containing gas;
A substrate having a substrate layer disposed in contact with the carbon-containing gas ejected from the gas ejection portion; And
A heating device arranged to locally heat a region of a substrate having a substrate layer; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

Gas supply, and
A gas supply regulator, and
A gas ejection portion, and
In a device configuration including a heating device,
a. Positioning a substrate having a substrate layer inside the apparatus, and
b. Performing a method of manufacturing a non-catalyst substrate grown graphene, and
c. Positioning the graphene-formed substrate outside the apparatus; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

A gas ejection portion, and
In a device configuration including a heating device,
a. Positioning a substrate having a substrate layer inside the apparatus, and
b. Performing a method of manufacturing a non-catalyst substrate grown graphene, and
c. Positioning the graphene-formed substrate outside the apparatus; To
Wherein the non-catalytic substrate growth graphene manufacturing apparatus

Positioning a substrate having a substrate layer inside the device, performing a method of manufacturing a non-catalyst substrate grown graphene, and then placing the graphene-formed substrate outside the device; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

Performing a method of manufacturing a non-catalyst substrate grown graphene; of
Characterized in that the non-catalytic substrate growth graphene production apparatus

73. A method of manufacturing a non-catalytic substrate growth graphene according to any one of claims 69 to 73, of
Characterized process platform

Supplying and discharging a carbon-containing gas; And
Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And
In a heteroepitaxial growth type of van der Waals type nucleated on the surface of the substrate layer, adsorbing, diffusing, and the like of hydrocarbon radicals, Growing graphene on the substrate layer; , &Lt; / RTI &
Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

Supplying and discharging a carbon-containing gas; And
Performing Low-Pressure Chemical Vapor Deposition (LPCVD); And
In the growth type of van der Waals type which is generated nuclei on the surface of the substrate layer by adsorbing, diffusing and the hydrocarbon radicals, graphene is deposited on the substrate layer without the catalyst layer Growing step; , &Lt; / RTI &
Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate having a substrate layer inside the apparatus, and
b. Performing a method of manufacturing a non-catalyst substrate grown graphene, and
c. Positioning the graphene-formed substrate outside the apparatus; , &Lt; / RTI &
Wherein the steps are controlled by a controller of the apparatus for producing non-catalytic substrate growth grains; of
Method for manufacturing graphene growth of non-catalytic substrate characterized

a. Positioning a substrate having a substrate layer thereon, and
b. Supplying carbon-containing gas and performing low-pressure chemical vapor deposition (LPCVD), and
c. Growing graphene on the substrate layer in the absence of a catalyst layer; of
Method for manufacturing graphene growth of non-catalytic substrate characterized