KR20160057642A - Quantum dot and π-conjugated molecule hybrids nanoparticle, and molecular electronic devices including the same - Google Patents

Abstract

The present invention relates to a quantum dot-insulation layer-organic semiconductor hybrid nano structure which connects a functional organic semiconductor to a quantum dot, to a molecular electronic device comprising the same, and to a producing method of the nano structure and, more specifically, to a quantum dot-insulation layer-organic semiconductor hybrid nano structure which is a next generation n-ins-p conjugated nano structure using energy and charge transfer phenomenon depending on adjusting the distance between both semiconductors by introducing an insulation layer between an quantum dot which is an n-type semiconductor and a p-type organic semiconductor, to a producing method thereof, and to a molecular electronic device comprising the nano structure.

Description

Quantum dot-insulated molecular-organic semiconductor hybrid nanostructures and molecular electronic devices containing the same - Patents.com

The present invention relates to a quantum dot-insulated molecular-organic semiconductor hybrid nanostructure in which an insulating molecule is used as an intermediate layer in quantum dots and a functional organic semiconductor is bonded to the quantum dot, a molecular electronic device including the same, and a method for manufacturing the nanostructure, To nanostructures providing electrical properties.

With the rapid development of advanced materials and device technologies, electronic or optical devices such as "wearable computers" and "flexible electronic newspapers" that have existed only in the imagination are realizing. Human-friendly optoelectronic devices are being studied and fabricated based on advanced materials with new properties.

In order to overcome the optical and electrical limitations of existing materials, hybrid nanostructured materials based on nanophysical theory show synergistic effects beyond the limitations of existing materials due to specific effects between materials. When a quantum dot having excellent luminescence characteristics and an organic semiconductor having a light-emitting and pie-conjugated structure having good conductivity are combined, there is a theoretical prediction that maximizes luminescence and electric characteristics through energy transfer and charge transfer between the two. However, Research has not been conducted.

Patent Document 1: Patent Document 10-2011-0117972 Patent Document 2: JP-A-10-2014-0006401 Patent Document 3: Japanese Patent Application Laid-Open No. 10-0095379 Patent Document 4: Patent Document 10-2009-0105755 Patent Document 5: WO 2002/048432

In the present invention, by introducing an insulating molecule between a quantum dot which is an n-type semiconductor and a p-type organic semiconductor, the luminescent characteristics of the quantum dots and the organic semiconductor are maximized and the electrical and optical characteristics are changed by controlling the size of the insulating molecule. The present invention relates to a quantum dot-insulated molecular-organic semiconductor hybrid nano structure which is an n-type insulated p-type semiconductor junction nano structure, a method for producing the same, and a molecular electronic device including the nano structure .

Quantum dots, which are tens of nanometers (nm) or less, have a unique optical property. When a quantum dot is formed by an inorganic light emitting semiconductor, a quantum confinement effect I have. The distribution of the energy level and the characteristics of the emission wavelength are changed depending on the size, and the optical stability is obtained when the core-shell is fabricated. Therefore, semiconductor-based quantum dots can be applied to electronic devices, displays, and energy devices.

On the other hand, organic semiconducting compounds with pie conjugate bonds have excellent electrical conduction characteristics and self-luminescence characteristics due to the structure in which electrons in the pie orbit of the constituent carbon atoms are alternately bonded. As a semiconductor, OLEDs organic light emitting device). Such a hybrid of a pi conjugated molecule and a quantum dot can be used as a novel material for a light emitting diode in a flexible display device. Hybrid materials with enhanced charge transfer efficiency can also be used as nanoscale photovoltaic devices.

Controlling the energy transfer and charge transfer efficiency between the quantum dot and the pi conjugated molecule can control the distance between the quantum dot and the pi conjugated molecule and the degree of superposition of the spectrum. Here, energy transfer refers to a phenomenon in which energy gap of a donor whose energy gap is slightly larger in the two molecules emitting light is transferred to an acceptor having a smaller energy gap. At this time, the overlap of the absorption spectrum of the acceptor with the emission spectrum of the donor should be good, which controls the degree of energy transfer by adjusting the distance between donor and acceptor molecules, and tends to be inversely proportional to the sixth power of distance. That is, when the critical distance for energy transfer is 1 to 10 nm, the quenching phenomenon disappears when the thickness is less than 1 nm, and the energy transmission is rarely performed when the distance is about 10 nm or more.

In addition, charge transfer refers to the phenomenon that the charge of an excited donor is directly transferred to another acceptor when the donor and acceptor molecules are located close to each other, and the electron orbit of the donor and the acceptor It is possible when overlapping, so it occurs when the distance between two substances is very close to 1 nm or less.

Using this phenomenon, the present invention provides a nanostructure comprising a quantum dot as a core layer and an organic semiconductive compound of a pi conjugated structure as a cell layer, thereby adjusting the distance between both materials, thereby providing a core material of a nano-sized molecular optoelectronic device .

In order to achieve the above object, the present invention provides a quantum dot-organic semiconductor hybrid nano structure having a core-shell structure in which a functional organic semiconductor is bonded to the surface of a quantum dot. The structure can control energy and charge transfer efficiency between quantum dots and organic semiconductors, thus providing new luminescence and electrical properties.

Conventional quantum dots have excellent luminescence characteristics, but display and solar cell materials have problems in mass production for control of physical properties and large area coating after synthesis. In addition, organic semiconductor light emitting materials used in OLEDs require improvement in optical properties.

In order to overcome these drawbacks, the present invention provides a nanostructure capable of controlling mutual luminescence characteristics by attaching functional groups to the ends of organic semiconductors so that quantum dots and organic semiconductors can be bonded well.

When the quantum dots and organic semiconductors are close to each other (less than 1 nm), the photocurrent increases due to the smooth charge transfer. As a result, It can be used as solar cell nano material or display material.

In the nanostructure according to the present invention, since the quantum dot-insulating layer-carbazole derivative compound is a hetero-junction structure of an n-type insulating layer and a p-type semiconductor, electrons and holes generated by light are well transferred through heterojunction The increase of the photocurrent can control the distance and the structure between the quantum dot and the organic semiconductor to provide an excellent effect to a device using the photoconductive effect such as a solar cell.

1 shows the chemical structure of a QD-CB nanostructure composed of a quantum dot-insulating molecule-carbazole organic semiconductor compound.
Figure 2 shows an HR-TEM image of the QD-CB hybrid nanostructure.
Figure 3 shows FT-IR spectra of red QD and hybrid QD-CB nanostructures bound with oleic acid (OA).
Figure 4 shows a normalized UV-vis absorption spectrum and a QD solution light-emitting (PL) spectrum of a QD-CB hybrid nanostructure.
Figure 5 shows a laser confocal microscope (LCM) luminescence spectrum of a red light emitting quantum dot and a QD-CB single nanostructure.
FIG. 6 shows a transient absorption (time-resolved absorption) difference spectrum of QD-CB (λ _ex = 620 nm).
Figure 7 shows a normalized time-resolved photoluminescence (PL) decay curve of the red QD and QD-CB nanostructures.
Figure 8a shows the AFM surface profile of a single QD-CB nanostructure.
FIG. 8B shows a conceptual diagram of a CAFM experiment on photoreaction IV characteristics using a single QD-CB nanostructure.
Figure 9 shows a current-voltage (IV) characteristic curve of a QD-CB single nanostructure in a dark and a light condition.

SUMMARY OF THE INVENTION The present invention has been made in view of the problems described above, and it is an object of the present invention to provide a nanostructure comprising a core layer made of quantum dots and an insulating layer made of insulating molecules, and a shell layer made of a carbazole compound, Lt; / RTI >

In a specific example of the present invention, the quantum dot is a combination of two species selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgTe, GaN, GaP, GaAs, InP, An insulating layer composed of a core layer and insulating molecules, and a shell layer composed of a carbazole compound, which is an organic semiconductor of a pi conjugated structure.

In another embodiment of the present invention, the quantum dot is selected from the group consisting of CdSe / ZnS, CdSe / ZnSe, CdS / ZnSe, CdS / ZnS, CdTe / ZnSe and CdTe / ZnS.

In another specific example of the present invention, a carbazole compound, which is an organic semiconductor of a pi conjugated structure in which an insulating layer composed of the insulating molecule is bonded, is a compound represented by the following Chemical Formula 1:

≪ Formula 1 >

(In the formula 1, ○ denotes the core layer, R _1, R ₂ are the same or different and, independently from each other hydrogen to each other; heavy hydrogen; halogen; aryl group of C ₆ ~ C _60; fluorene group; O, N , S, Si and P, at least one group of C ₂ ~ containing a hetero atom C ₆₀ heterocyclic group of; C ₃ ~ fused ring of an aromatic ring of C ₆₀ of aliphatic rings and C ₆ ~ C ₆₀ group; C ₁ ~ a C ₂₀ alkyl group; an alkenyl group of _{C 2 ~ C 20; C 2} ~ alkynyl of C _20; aryloxy of _{C 6 ~ C 30;; C} 1 ~ C 20 alkoxyl group is selected from the group consisting of, or R ^{1 and} R ² are the same or different from each other when q and r are 2 or more, and a plurality of R ^{1 s} or a plurality of R ^{2 s} may combine with each other to form a ring. 4, and n represents an integer of 2 to 5)

Preferably, in the formula 1, n is an integer of 2 to 5. More preferably, n is an integer of 4 and R &_lt; ₁ > and R &_lt; ₂ > are hydrogen, and is a carbazole compound having an insulating layer composed of an insulating molecule having 11 carbon atoms and an organic semiconductor having a pi- and a shell layer on the surface of the nanostructure.

In another specific example of the present invention, there is provided a nanostructure wherein the nanostructure has a diameter of 4 to 11 nm and the nanostructure is an n-insulated (p-type) heterostructure.

In a preferred specific example of the present invention, the organic semiconducting carbazole compound having a pi-conjugated structure in which a core layer made of quantum dots is CdSe / ZnS and an insulating layer made of insulating molecules are bonded is a compound represented by the formula Is an integer of 4, and R ₁ and R ₂ are each a hydrogen atom.

In another specific example of the present invention, the nanostructure includes a core layer made of quantum dots, an insulating layer made of insulating molecules, and a shell layer made of an organic semiconductor carbazole compound having a pi conjugated structure A molecular electronic device is provided, and an electronic device including the molecular electronic device is also provided. Here, the electronic device is preferably an electronic device including a solar cell, a display or a lighting device and a control unit for controlling the same.

The present invention also provides a compound represented by the following general formula (2) as the organic semiconductor compound.

(2)

Wherein R ₁ and R ₂ are the same or different from each other and are independently selected from the group consisting of hydrogen, deuterium, halogen, C ₆ to C ₆₀ aryl, fluorenyl, O, N, S, Si and P A C ₂ to C ₆₀ heterocyclic group containing at least one heteroatom, a fused ring group of a C ₃ to C ₆₀ aliphatic ring and a C ₆ to C ₆₀ aromatic ring, a C ₁ to C ₂₀ alkyl group, a C ₂ to C ₂₀ heterocyclic group, alkynyl of _{C 2 ~ C 20;; ~} C 20 alkenyl group in the aryloxy group of _{C 6 ~ C 30;; C} 1 ~ C 20 alkoxyl group is selected from the group consisting of, or R ^{1 ~ 2} are, the q and r are each a multiple of 2 or more and are the same or different from each other, and a plurality of R ^{1 s} or a plurality of R ^{2 s} may combine with each other to form a ring, q and r are integers of 0 to 4, n is 2 To 5 < RTI ID = 0.0 >

More preferably, a compound represented by the following general formula (3) is provided.

(3)

In addition, the present invention is a method for providing the nanostructure,

a) fabricating core-shell quantum dots with two inorganic semiconductor materials; b) chemically synthesizing the P-type conjugated organic semiconductor carbazole compound; c) introducing an insulating molecule into the organic semiconductor compound and introducing a thiol group at an end of the insulating molecule; and d) introducing the compound into the surface of the quantum dot. The quantum dot-insulator-organic semiconductor compound comprises a core-insulating layer-shell layer.

Here, the preparation method in the case where the compound of step (c) is a compound represented by the formula 2 is provided as a preferable example.

In the step (d), a compound represented by Formula 2 is introduced into a quantum dot by an ultrasonic wave in a ligand exchange manner.

Hereinafter, embodiments of the present invention will be described in detail. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be apparent to those of ordinary skill in the art.

Example 1: Synthesis of CdSe-ZnS core-shell Green quantum dot

CdO (0.4 mmol), zinc acetate (4 mmol) and oleic acid (5.5 mL) are added to the reactor together with 1-octadecene (20 mL) and heated to 150 ° C. Oleic acid is substituted for zinc and a vacuum of 100 mTorr is applied for 20 minutes to remove acetic acid, which is an impurity. And when heat of 310 ℃ is applied, it becomes a mixture of transparent color. After maintaining the temperature at 310 ° C for 20 minutes, 0.1 mmol of Se powder and 4 mmol of S powder were dissolved in 3 mL of trioctylphosphine, and the solution of Se and S was added to a reaction apparatus containing Cd (OA) 2 and Zn (OA) Immediately inject. The mixture was grown at 310 ° C for 10 minutes and then stopped by using an ice bath. Ethanol precipitate, and the quantum dots are separated using a centrifuge. The excess impurities are washed off with chloroform and ethanol.

FT-IR (NaCl pellet, cm ^-1 ): 2800-3000 (Alkane CH), 1617 (C = O)

Example 2: Synthesis of 11- (9H-carbazol-9-yl) undecane-1-thiol

3 mL of tetrahydrofuran (THF) is added to 0.7 mL of 11-Bromo-1-undecene, which is stirred and heated to 75 ° C. To the other reaction apparatus, 0.5 g (3 mmol) of carbazole and 0.2 g (NaH 8 mmol) of sodium hydride were added, tetrahydrofuran (THF) was added, and the mixture was dropwise added to the reaction apparatus and refluxed for 24 hours. After removing the tetrahydrofuran (THF) with distilled water and quenching, tetrahydrofuran (THF) was removed using methylene chloride (MC) and distilled water. The organic layer was dried with MgSO ₄ and the solvent was removed using a rotary evaporator. To obtain the substance 9- (undec-10-enyl) -9H-carbazole. After adding 0.29 mL of thioacetic acid, add 0.009 g of azobisisobutyronitrile (AIBN), reflux at 60-70 ° C for 24 hours, remove tetrahydrofuran (THF) using a rotary evaporator, add 0.57 g of the obtained compound and 30 mL of tetrahydrofuran The material was obtained through colum chromatography (methylene chloride hexane = 1: 1). The thus obtained substance S-11- (9H-carbazol-9-yl) undecyl ethanethioate (1.0 mmol), acetone (10 mL) and 3 M sodium hydroxide (10 mL of NaOH) are put into a reaction apparatus and stirred for 12 hours. Then, 1 M hydrochloric acid (HCl) was added to extract methylene chloride (MC). The organic layer was dried with MgSO ₄ , and the solvent was removed using a rotary evaporator. The solvent was removed by colum chromatography (methylene chloride: hexane = 2: 8) : 80-95%).

Example 3: Synthesis of 8- (9H-carbazol-9-yl) octane-1-thiol

To 0.7 mL of 8-Bromooct-1-ene, 3 mL of tetrahydrofuran (THF) was added to the reaction apparatus, stirred and heated to 75 ° C. To the other reaction apparatus, 0.5 g (3 mmol) of carbazole and 0.2 g (NaH 8 mmol) of sodium hydride were added, tetrahydrofuran (THF) was added, and the mixture was dropwise added to the reaction apparatus and refluxed for 24 hours. After removing the tetrahydrofuran (THF) with distilled water and quenching, tetrahydrofuran (THF) was removed using methylene chloride (MC) and distilled water. The organic layer was dried with MgSO ₄ and the solvent was removed using a rotary evaporator. (Oct-7-enyl) -9H-carbazole. After adding 0.29 mL of thioacetic acid, add 0.009 g of azobisisobutyronitrile (AIBN), reflux at 60-70 ° C for 24 hours, remove tetrahydrofuran (THF) using a rotary evaporator, add 0.57 g of the obtained compound and 30 mL of tetrahydrofuran The material was obtained through colum chromatography (methylene chloride hexane = 1: 1). The resulting material, 9S-8- (9H-carbazol-9-yl) octyl ethanethioate (1.0 mmol), acetone (10 mL) and 3 M sodium hydroxide (NaOH 10 mL) are added to the reaction apparatus and stirred for 12 hours. Then, 1 M hydrochloric acid (HCl) was added to extract methylene chloride (MC). The organic layer was dried over MgSO ₄ , and the solvent was removed by rotary evaporation. The residue was purified by column chromatography (methylene chloride: hexane = 2: 8) 80-95%).

Example 4: Synthesis of 4- (9H-carbazol-9-yl) butane-1-thiol

4-Bromobut-1-ene (0.7 mL) was charged with 3 mL of tetrahydrofuran (THF) into the reaction apparatus and stirred. To the other reaction apparatus, 0.5 g (3 mmol) of carbazole and 0.2 g (NaH 8 mmol) of sodium hydride were added, tetrahydrofuran (THF) was added, and the mixture was dropwise added to the reaction apparatus and refluxed for 24 hours. After removing the tetrahydrofuran (THF) with distilled water and quenching, tetrahydrofuran (THF) was removed using methylene chloride (MC) and distilled water. The organic layer was dried with MgSO ₄ and the solvent was removed using a rotary evaporator. 9- (but-3-enyl) -9H-carbazole was obtained. After adding 0.29 mL of thioacetic acid, add 0.009 g of azobisisobutyronitrile (AIBN), reflux at 60-70 ° C for 24 hours, remove tetrahydrofuran (THF) using a rotary evaporator, add 0.57 g of the obtained compound and 30 mL of tetrahydrofuran The material was obtained via column chromatography (methylene chloride: hexane = 1: 1). The resulting material, S-4- (9H-carbazol-9-yl) butyl ethanethioate (1.0 mmol), acetone (10 mL) and 3 M sodium hydroxide (10 mL of NaOH) are added to the reaction apparatus and stirred for 12 hours. Then, 1 M hydrochloric acid (HCl) was added to extract methylene chloride (MC). The organic layer was dried over MgSO ₄ , and the solvent was removed by rotary evaporation. The product was purified by colum chromatography (methylene chloride: hexane = 2: 8) : 80-95%).

Example 5: Quantum dot synthesis involving Carbazole

(9H-carbazol-9-yl) undecane-1-thiol 8- (9H-carbazol-9-yl) octane- -yl) butane-1-thiol (CB4) in 5 mL ethanol and 5 mL chloroform, respectively, and the ligand is replaced by sonication for 3 hours. After the reaction, add 40 mL of chloroform to precipitate the CdSe / ZnS quantum dots substituted with the respective carbazole compounds and remove excess ligands by centrifugation. Then, the impurities are removed by using ethanol and chloroform.

Synthetic formula 2. Qdots piled up by Carbarzole

[Test Example]

The cross-sectional view of the QD-CB nanostructure formed of the shell layer and the carbazole compound into which the insulating molecule synthesized as described above is formed into a quantum dot as a core layer can be considered as shown in FIG.

Referring to the HR-TEM image of such a nanostructure, the diameter of the QD-CB nanostructure was measured to be about 10 (± 1) nm, which is very similar to the theoretical value obtained from FIG. It has also been observed that several of the nanostructures are distributed in a relatively similar size.

Looking at the FT-IR spectra of the hybrid QD-CB nanoparticles, symmetric and asymmetric stretching mode peaks at 2854 and 2925 cm ^-1 were measured. The CN stretching mode was measured at 1324 and 1384 cm ^-1 due to carbazole (CB) and not to the red quantum dots to which oleic acid was bound. That is, it can be seen from this that carbazole is bonded to the surface of the quantum dots (see FIG. 3).

In addition, in the normalized UV-vis absorption spectrum of QD-CB and the solution photoluminescence (PL) spectrum of red QD (see FIG. 4), the pi (pi) - pi 359 nm, and the PL peak of red QD was visible at 640 nm. Energy transfer from a quantum dot to a carbazole molecule is more difficult than when energy transfer from a carbazole molecule to a quantum dot is due to the overlap between the two spectra. QD-CB nanostructures have an undecane molecule between the QD and the carbazole molecule, which results in a significant inhibition of energy transfer.

FIG. 5 is a graph showing the results of measurement of a QD-CB0 nanostructure in which a carbazole organic semiconductor is bonded to the surface of a red-emitting CaSe / ZnS quantum dot by means of a laser confocal microscope (LCM) emission spectroscopy (PL) will be. From this, relatively high LCM PL peaks were measured in the 640 nm optical region when only red quantum dots were present. The LCM PL peak of the red QD portion of the QD-CB nanostructure was measured at 640 nm and a relatively weak shoulder peak was observed at approximately 510 nm due to the carbazole molecules. The QD-CB nanostructures were dominated by red QDs in LCM PL, indicating that the red quantum dots do not decrease after hybridization to carbazole molecules. This result shows that energy and charge transfer can be achieved between QD-CB and QD- Is weak due to the presence of the undecane chain as an insulating molecule and the lack of spectral overlap (see FIG. 5).

The QD-CB nanostructures exhibit a mild bleaching at 640 nm due to the ineffective charge transfer from the excited red quantum dot to the carbazole to which the insulating molecule is bound.

FIG. 7 shows a normalized time-resolved photoluminescence (PL) decay curve showing that the exciton lifetime of the QD-CB nanostructure is not so short that the electron migration is blocked by the insulating spacer It means.

Also, through the photocurrent current-voltage characteristic curve (see FIG. 8) using a conductive atomic force microscope and a laser (λ _ex = 488 nm) of a QD-CB single nanostructure, it was found that charge transfer in the nanostructure was not occurring well This is because the photoreactive current-voltage characteristic of the QD-CB nanostructure is asymmetric. This is because charge transfer does not occur due to the presence of an insulating molecule between the quantum dot and the CB organic semiconductor. The n-ins-p coupled QD-CB nanostructures show that the current-voltage characteristics are highly asymmetric, which is equivalent to diode behavior. In contrast to the single red QD and the current-voltage characteristics, it is similar to the QD-CB nanostructure and red QD, indicating that most of the current in the QD-CB nanostructure is transferred from the quantum dot (see FIG.

Claims (17)

A core layer made of body quantum dots;
An insulating layer made of insulating molecules;
A shell layer comprising an organic semiconductor carbazole compound of a pi conjugated structure;
≪ / RTI >

The quantum dot of claim 1, wherein the quantum dot is a combination of two selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgTe, GaN, GaP, GaAs, InP, Nano structure
3. The nanostructure according to claim 2, wherein the quantum dot is selected from the group consisting of CdSe / ZnS, CdSe / ZnSe, CdS / ZnSe, CdS / ZnS, CdTe / ZnSe,
2. The nanocomposite according to claim 1, wherein the organic semiconductor carbazole compound is a compound represented by the following formula (1)
≪ Formula 1 >

(In the formula 1, ○ denotes the core layer, R _1, R ₂ are the same or different and, independently from each other hydrogen to each other; heavy hydrogen; halogen; aryl group of C ₆ ~ C _60; fluorene group; O, N , S, Si and P, at least one group of C ₂ ~ containing a hetero atom C ₆₀ heterocyclic group of; C ₃ ~ fused ring of an aromatic ring of C ₆₀ of aliphatic rings and C ₆ ~ C ₆₀ group; C ₁ ~ a C ₂₀ alkyl group; an alkenyl group of _{C 2 ~ C 20; C 2} ~ alkynyl of C _20; aryloxy of _{C 6 ~ C 30;; C} 1 ~ C 20 alkoxyl group is selected from the group consisting of, or R ^{1 and} R ² are the same or different from each other when q and r are 2 or more, and a plurality of R ^{1 s} or a plurality of R ^{2 s} may combine with each other to form a ring. 4, and n represents an integer of 2 to 5)
5. The nanostructure according to claim 4, wherein the nanostructure has a diameter of 4 to 11 nm
6. The nanostructure according to claim 5, wherein the nanostructure is an n-insulated (p-type)
5. The nanocomposite according to claim 4, wherein the organic semiconducting carbazole compound is a compound represented by the formula (1) wherein n is an integer of 2 to 5
The organic semiconductor carbazole compound according to claim 4, wherein the organic semiconducting carbazole compound is a compound represented by the following formula (1) wherein n is an integer of 4 and R ₁ and R ₂ are each a hydrogen atom.
5. The organic electroluminescent device according to claim 4, wherein the quantum dot is made of CdSe / ZnS and the organic semiconductor carbazole compound is a compound represented by the formula (1) wherein n represents an integer of 4 and R ₁ and R ₂ represent hydrogen Characterized by a nanostructure
A molecular electronic device comprising a nanostructure according to any one of claims 1 to 9 between a first pole and a second pole.
An electronic device comprising a molecular electronic device comprising a nanostructure according to any one of claims 1 to 9
The electronic device according to claim 11, comprising a solar cell, a display or a lighting device including the molecular electronic device, and a control unit controlling the same
14. The compound according to claim 13, which is a compound represented by the following formula (3)
(3)

a) fabricating core-shell quantum dots with two inorganic semiconductor materials;
b) chemically synthesizing the P-type conjugated organic semiconductor carbazole compound;
c) introducing an insulator molecule into the organic semiconductor carbazole compound and introducing a thiol group to the insulator molecule end;
d) introducing the compound into the surface of the quantum dot.
Method for manufacturing a nanostructure comprising a quantum dot-insulating layer-organic semiconductor carbazole compound core-insulating layer-shell layer
15. The method according to claim 14, wherein the compound in step (c) is a compound represented by the following formula
(2)

15. The method according to claim 14, wherein the step (d) comprises introducing a compound represented by Formula 2 into a quantum dot by an ultrasonic wave in a ligand exchange manner The method according to claim 14, wherein the step of synthesizing the compound represented by the formula (2) in the step (b) comprises introducing an insulating molecule into the carbazole compound

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