KR20160055304A - Deposition Dectecting Sensor and depositing velocity measuring device and thin film depositing apparatus - Google Patents

Abstract

An objective of the present invention is to provide a deposition detecting sensor, and a depositing velocity measuring device; and a thin film depositing apparatus using the same which accurately measures the depositing velocity of a thin film by preventing a crack on a first electrode. The deposition detecting sensor comprises: a quartz crystal; a first electrode disposed on one surface of the quartz crystal; a second electrode disposed on an other surface of the quartz crystal; and a protective layer disposed on the first electrode to prevent deposition of a deposition material on the first electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to a deposition detecting sensor and a deposition rate measuring apparatus using the deposition detecting sensor and a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus, and more particularly, to a deposition rate measuring apparatus for measuring a deposition rate of a thin film.

Thin film deposition equipment is widely used in the manufacture of semiconductors and display devices. Such a thin film deposition apparatus can be classified into a sputtering apparatus, a chemical vapor deposition apparatus, and an evaporation apparatus according to a material to be deposited and a deposition method.

Hereinafter, a conventional thin film deposition apparatus will be described with reference to the drawings.

FIG. 1A is a schematic diagram of a conventional thin film deposition apparatus, which relates to vaporization equipment. FIG.

As can be seen from FIG. 1A, a conventional thin film deposition apparatus includes a process chamber 1, a vaporization vessel 2, and a deposition detection sensor 3.

The vaporization vessel (2) is located in the process chamber (1). When the vaporization vessel 2 is heated, the vaporization vessel 2 is filled with the substance to be vaporized and the substrate S is fixed on the substrate S at a position facing the vaporization vessel 2, Is deposited.

The deposition detection sensor 3 is positioned in the process chamber 1 and senses a substance to be vaporized in the vaporization vessel 2. The material to be vaporized in the vaporization vessel 2 is deposited on the deposition detection sensor 3, and the deposition of the thin film can be detected accordingly.

1B is a cross-sectional view of a conventional deposition detection sensor for detecting thin film deposition.

1B, the conventional deposition detection sensor 3 includes a quartz crystal 3a, a first electrode 3b, and a second electrode 3c.

The quartz crystal 3a vibrates constantly at a frequency corresponding to the frequency of the vibration wave when an external vibration wave is supplied. The first electrode 3b is formed on one side of the quartz crystal 3a and the second electrode 3c is formed on the other side of the quartz crystal 3a.

Since the frequency of the quartz crystal 3a changes before and after the deposition of the material, the deposition of the material can be detected through the change of the frequency of the quartz crystal 3a, The deposition rate of the material can be calculated through the variation of the frequency of the deposition. When the deposition rate of the material to be deposited is calculated, the thickness of the finally obtained thin film can be precisely controlled.

In the conventional deposition detection sensor 3, substances are deposited on the surface of the first electrode 3b, and the frequency of the quartz crystal 3a is changed, thereby calculating the deposition rate of the deposition material.

However, the first electrode 3b is made of gold (Au). The first electrode 3b made of gold has a disadvantage that a crack is easily generated when a material is deposited on the surface of the first electrode 3b. In particular, when the deposition material is an inorganic material or a metal material, cracking of the first electrode 3b is increased. When cracks are generated on the surface of the first electrode 3b, the frequency of the quartz crystal 3a is affected by the cracks to be unevenly changed. As a result, the thickness of the thin film to be deposited can be precisely controlled There is no problem.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a deposition detection sensor capable of precisely measuring a deposition rate of a thin film by preventing a crack generated in a first electrode, And to provide a thin film deposition apparatus. It is another object of the present invention to provide a thin film deposition method using the thin film deposition apparatus and a method of manufacturing an organic light emitting device using the thin film deposition apparatus.

In order to achieve the above object, the present invention provides a quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent a deposition material from being deposited on the first electrode.

The present invention also relates to a deposition detection sensor, An oscillator for supplying a vibration wave of a predetermined frequency to the deposition detection sensor; And a deposition rate calculator for calculating a deposition rate by receiving a frequency from the deposition detection sensor, wherein the deposition detection sensor comprises: a quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent a deposition material from being deposited on the first electrode.

The present invention also provides a process chamber comprising: a process chamber; A substrate support disposed within the process chamber; A vaporization vessel disposed in the process chamber so as to face the substrate support and containing an evaporation material therein; A heating unit for heating the vaporization vessel; And a deposition rate measuring device for measuring a deposition rate of the deposition material, wherein the deposition rate measuring device comprises: a deposition detection sensor; An oscillator for supplying a vibration wave of a predetermined frequency to the deposition detection sensor; And a deposition rate calculator for calculating a deposition rate by receiving a frequency from the deposition detection sensor, wherein the deposition detection sensor comprises: a quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent evaporation material from being deposited on the first electrode.

The present invention also provides a method of manufacturing a semiconductor device, comprising: a step of placing a substrate on a substrate support; Heating the vaporization vessel containing the deposition material to vaporize the deposition material to deposit on the substrate; Measuring a deposition rate of a deposition material deposited on the substrate; And controlling the amount of vaporization of the deposition material based on the measured deposition rate, wherein the step of measuring the deposition rate of the deposition material includes supplying a vibration wave of a preset frequency to the deposition detection sensor in the oscillator, Wherein the vapor deposition rate sensor is provided on one side of the quartz crystal, the quartz crystal, and the vapor deposition rate of the deposition material, A second electrode provided on the other surface of the quartz crystal, and a protective layer provided on the first electrode to prevent a deposition material from being deposited on the first electrode. .

The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: forming an anode on a substrate; Forming a hole injection layer on the anode; Forming a hole transport layer on the hole injection layer; Forming a light emitting layer on the hole transporting layer; Forming an electron transport layer on the light emitting layer; Forming an electron injection layer on the electron transport layer; And a step of forming a cathode on the electron injection layer, wherein at least one of the anode, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, the electron injection layer, Placing a substrate on a substrate support; Heating the vaporization vessel containing the deposition material to vaporize the deposition material to deposit on the substrate; Measuring a deposition rate of a deposition material deposited on the substrate; And controlling the amount of vaporization of the deposition material based on the measured deposition rate, wherein the step of measuring the deposition rate of the deposition material includes supplying a vibration wave of a preset frequency to the deposition detection sensor in the oscillator, Wherein the vapor deposition rate sensor is provided on one side of the quartz crystal, the quartz crystal, and the vapor deposition rate of the deposition material, A second electrode provided on the other surface of the quartz crystal, and a protective layer provided on the first electrode to prevent a deposition material from being deposited on the first electrode. And a method of manufacturing an organic light emitting device.

According to the present invention as described above, the following effects can be obtained.

According to an embodiment of the present invention, since the vapor deposition sensor has the protective layer formed on the first electrode, the vaporized material is deposited on the protective layer without being deposited on the first electrode, It is possible to prevent a problem of generating cracks in the substrate. Accordingly, the deposition rate of the deposited film can be accurately measured, and the final thickness of the deposited film based on the deposition rate of the measured film can be more accurately adjusted.

FIG. 1A is a schematic view of a conventional thin film deposition apparatus, and FIG. 1B is a cross-sectional view of a conventional deposition detection sensor for detecting thin film deposition.
2 is a schematic view of a deposition rate measuring apparatus according to an embodiment of the present invention.
3 is a schematic diagram of a thin film deposition apparatus according to an embodiment of the present invention.
4 is a process flow diagram of a thin film deposition method according to an embodiment of the present invention.
5 is a cross-sectional view of an organic light emitting device according to an embodiment of the present invention.
FIG. 6A is a photograph of a deposition detection sensor in which lithium (Li) is deposited without forming a protective layer, and FIG. 6B is a photograph of a case where lithium (Li) It is a photograph.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, and the like disclosed in the drawings for describing the embodiments of the present invention are illustrative, and thus the present invention is not limited thereto. Like reference numerals refer to like elements throughout the specification. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. In the case where the word 'includes', 'having', 'done', etc. are used in this specification, other parts can be added unless '~ only' is used. Unless the context clearly dictates otherwise, including the plural unless the context clearly dictates otherwise.

In interpreting the constituent elements, it is construed to include the error range even if there is no separate description.

In the case of a description of the positional relationship, for example, if the positional relationship between two parts is described as 'on', 'on top', 'under', and 'next to' Or " direct " is not used, one or more other portions may be located between the two portions.

In the case of a description of a temporal relationship, for example, if the temporal relationship is described by 'after', 'after', 'after', 'before', etc., May not be continuous unless they are not used.

The first, second, etc. are used to describe various components, but these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, the first component mentioned below may be the second component within the technical spirit of the present invention.

It is to be understood that each of the features of the various embodiments of the present invention may be combined or combined with each other, partially or wholly, technically various interlocking and driving, and that the embodiments may be practiced independently of each other, It is possible.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

2 is a schematic view of a deposition rate measuring apparatus according to an embodiment of the present invention.

2, the apparatus for measuring deposition rate according to an embodiment of the present invention includes a deposition detection sensor 100, an oscillator 200, and a deposition rate calculator 300.

The deposition detection sensor 100 can measure the deposition thickness and the deposition rate of the deposited material by sensing the deposition of the material. The deposition detection sensor 100 includes a quartz crystal 110, a first adhesive layer 120, a first electrode 130, a second adhesive layer 140, a second electrode 150, (160).

The quartz crystal 110 vibrates constantly at a frequency corresponding to the frequency of the vibration wave when an external vibration wave is supplied. The deposition detection sensor 100 according to an embodiment of the present invention senses deposition of a material through a change in vibration of the quartz crystal 110. That is, since the frequency of the quartz crystal 110 changes before and after the deposition of the material, the deposition of the material can be detected through the change of the frequency of the quartz crystal 110, The deposition thickness and the deposition rate of the material can be calculated through the variation of the frequency of the deposition gas.

The first adhesive layer 120 is formed on one surface of the quartz crystal 110, specifically, on the lower surface of the quartz crystal 110 in the direction in which the material is deposited. The first adhesive layer 120 is formed between the quartz crystal 110 and the first electrode 130, thereby enhancing the adhesion between the quartz crystal 110 and the first electrode 130. The first adhesive layer 120 may be formed of a conductive material such as chromium (Cr) or titanium (Ti).

The first electrode 130 is formed on one surface of the first adhesive layer 120, specifically, on the lower surface of the first adhesive layer 120 in the direction in which the material is deposited. The first electrode 130 is made of a conductive material, and may be made of silver (Ag) or gold (Au), for example.

The second adhesive layer 140 is formed on the other surface of the quartz crystal 110, specifically, on the upper surface of the quartz crystal 110 far from the direction in which the substance is deposited. The second adhesive layer 140 may be formed between the quartz crystal 110 and the second electrode 150 to improve adhesion between the quartz crystal 110 and the second electrode 150. The second adhesive layer 140 may be formed of a conductive material, for example, chromium or titanium.

The second electrode 150 is formed on one surface of the second adhesive layer 140, specifically, on the upper surface of the second adhesive layer 140 farther from the direction in which the material is deposited. The second electrode 150 may be made of a conductive material, for example, silver or gold.

The protective layer 160 is formed on one surface of the first electrode 130, specifically, on the lower surface of the first electrode 130, which is closer to the direction in which the material is deposited.

The protective layer 160 prevents a material from being deposited on the lower surface of the first electrode 130, thereby preventing the first electrode 130 from being cracked. That is, a material is deposited on one surface of the protective layer 160, more specifically, on the lower surface of the protective layer 160.

Accordingly, the protective layer 160 may be formed to cover the entire lower surface of the first electrode 130. However, since the edge of the first electrode 130 is not exposed to the outside when the outer case of the deposition detection sensor 100 is formed in the bottom edge region of the first electrode 130, The protective layer 160 may be formed only on the lower surface of the first electrode 130 exposed to the outside except for the edge of the first electrode 130 covered by the outer case.

The protective layer 160, which serves to prevent cracking of the first electrode 130, is conductive and has good adhesion to the first electrode 130, and cracks do not occur when the material is deposited And examples thereof include indium (In), tin (Sn), zinc (Zn), aluminum (Al), and the like. Indium (In) has conductivity, has good adhesion with silver or gold, and has a soft characteristic. Therefore, cracks do not occur when the material is deposited on its surface, and since the melting point is 157 ° C., It is preferable as a material of the protective layer 160. [0064]

The oscillator 200 vibrates the quartz crystal 110 of the deposition detection sensor 100 at a frequency corresponding to the frequency of the vibration wave by supplying a vibration wave having a predetermined frequency to the deposition detection sensor 100 do. The oscillator 200 may be connected to the second electrode 150 of the deposition detection sensor 100, but is not limited thereto. When the oscillator 200 is connected to the second electrode 150 of the deposition detection sensor 100, the vibration wave supplied from the oscillator 200 is transmitted to the second electrode 150 and the second adhesive layer 140 And is transmitted to the quartz crystal 110.

The deposition rate calculator 300 receives the frequency information of the quartz crystal 110 from the deposition detection sensor 100 and calculates the deposition rate of the deposited material. The quartz crystal 110 of the deposition detection sensor 100 vibrates at a frequency corresponding to the frequency of the vibration wave supplied from the oscillator 200. At this time, when a material is deposited on the deposition detection sensor 100, more specifically, the protective layer 160 of the deposition detection sensor 100, the frequency of the quartz crystal 110 is changed, The deposition thickness of the deposition material and the deposition rate can be calculated.

Accordingly, the deposition rate calculator 300 receives the change in the frequency of the quartz crystal 110, which changes as the material is deposited, in real time, and calculates the deposition thickness and the deposition rate of the material on the basis of the frequency variation, . In order to calculate the deposition thickness and the deposition rate, the deposition rate calculator 300 has preset reference information on the variation of the frequency of the quartz crystal 110 according to the thickness of the substance deposited by the substance.

As described above, according to the embodiment of the present invention, since the deposition detection sensor 100 includes the protection layer 160 formed on the first electrode 130, The first electrode 130 can be prevented from being cracked by being deposited on the first electrode 130. Accordingly, the deposition rate of the deposited film can be accurately measured, and the final thickness of the deposited film based on the deposition rate of the measured film can be more accurately adjusted.

Particularly, when the deposition material is an inorganic material or a metal material, cracking of the first electrode 130 is increased. Accordingly, the deposition detection sensor 100 according to an embodiment of the present invention can be particularly useful when depositing an inorganic material or a metal material.

3 is a schematic diagram of a thin film deposition apparatus according to an embodiment of the present invention.

3, the thin film deposition apparatus according to an embodiment of the present invention includes a process chamber 10, a substrate support 20, a vaporization vessel 30, a heating unit 40, a deposition detection sensor 100, An oscillator 200, a deposition rate calculation unit 300, a vaporization control unit 400, and a power supply unit 500.

The process chamber 10 provides a reaction space in which a deposition process is performed. The process chamber 10 may be connected to a vacuum pump (not shown) to keep the interior of the process chamber under vacuum.

The substrate support 20 is positioned inside the process chamber 10 to support and support the substrate S. The substrate support 20 fixes the substrate S in a manner known in the art such as mechanical, such as clamping, adsorption or electrostatic. The substrate support 20 may be configured to be rotatable.

The vaporization vessel 30 is positioned inside the process chamber 10 while facing the substrate support 20. [ The material to be deposited on the substrate S is accommodated in the vaporization vessel 30 and the thus contained material is vaporized while being heated in the vaporization vessel 30, Lt; / RTI > The vaporization vessel 30 may be modified into various forms known in the art.

The heating unit 40 serves to heat the vaporization vessel 30. The heating unit 40 may be a heater such as a heat wire surrounding the outer circumferential surface of the vaporization vessel 30, but is not limited thereto.

Since the deposition rate measuring device including the deposition detection sensor 100, the oscillator 200, and the deposition rate calculator 300 is the same as that of FIG. 2 described above, a repetitive description will be omitted and only a description .

The vapor deposition sensor 100 senses vaporization of the material contained in the vaporization vessel 30. Accordingly, the deposition detection sensor 100 is disposed inside the process chamber 10, and more particularly, between the vaporization container 30 and the substrate support 20. Referring to FIG. In particular, the deposition detection sensor 100 is positioned in a path for vaporizing the material, and as shown in the figure, is inclined toward the vaporization vessel 30 to facilitate vaporization detection of the material. have.

The oscillator 200 and the deposition rate calculator 300 are located outside the process chamber 10.

The vaporization amount control unit 400 controls the amount of vaporized material contained in the vaporization vessel 30 based on the deposition rate information received and supplied from the deposition rate information calculated by the deposition rate calculation unit 300.

For example, when the deposition rate supplied from the deposition rate calculator 300 is higher than a preset deposition rate, the vaporization controller 400 controls the vaporization amount of the material contained in the vaporization vessel 30 to be reduced . Specifically, the vaporization control unit 400 controls the vaporization amount of the material contained in the vaporization vessel 30 to be reduced by lowering the heating temperature at which the vaporization vessel 30 is heated. In contrast, when the deposition rate supplied from the deposition rate calculator 300 is slower than a preset deposition rate, the vaporization controller 400 controls the vaporization amount of the material contained in the vaporization vessel 30 to be increased. Specifically, the vaporization control unit 400 controls the vaporization amount of the material contained in the vaporization vessel 30 to be increased by increasing the heating temperature for heating the vaporization vessel 30.

In this way, the evaporation amount control unit 400 determines whether to increase or decrease or maintain the vaporization amount of the vaporization material accommodated in the vaporization container 30 based on the deposition rate information supplied from the deposition rate calculation unit 300 . Also, the vaporization control unit 400 may determine the heating temperature of the vaporization vessel 30 depending on whether the vaporization amount is increased or decreased. In addition, the amount of vaporization control unit 400 can determine the amount of power supplied to the heating unit 40 based on the determined heating temperature of the vaporization vessel 30.

The power supply unit 500 supplies power to the heating unit 40 based on vaporization amount increase / decrease information supplied and supplied with vaporization amount change information from the vaporization amount control unit 400.

For example, when the information for increasing the amount of vaporization is supplied from the vaporization control unit 400, the power supply unit 500 supplies power higher than a predetermined power to the heating unit 40, 40 to heat the vaporization vessel 30 to a higher temperature. In contrast, when information for reducing the vaporization amount is supplied from the vaporization control unit 400, the power supply unit 500 supplies the heating unit 40 with power lower than a predetermined power, So that the vaporization vessel 30 is heated to a lower temperature.

The power supply unit 500 can receive the amount of power to be supplied to the heating unit 40 in the vaporization amount control unit 400. In this case, the vaporization amount increase / decrease information corresponds to the amount of power.

4 is a process flow diagram of a thin film deposition method according to an embodiment of the present invention. Hereinafter, a method of depositing a thin film according to an embodiment of the present invention will be described with reference to FIG. 2 and FIG. 3 in addition to FIG.

First, the substrate is placed (1S).

The step (1S) of mounting the substrate includes a step of fixing the substrate to the substrate supporting part 20 located inside the processing chamber 10.

Next, a thin film is deposited on the substrate (2S).

The step (2S) of depositing a thin film on the substrate includes a step of vaporizing the material by heating the vaporization vessel 30 containing the substance to be vaporized by the heating unit 40.

Next, the deposition rate of the thin film is measured (3S).

The step 3S of measuring the deposition rate of the thin film is performed using a deposition rate measuring device including a deposition detection sensor 100, an oscillator 200, and a deposition rate calculator 300. In the oscillator 200, a vibration wave having a preset frequency is supplied to the deposition detection sensor 100. The deposition rate calculator 300 receives the frequency information of the deposition detection sensor 100 and calculates a frequency The deposition rate of the thin film is measured through the change amount.

According to an embodiment of the present invention, a vaporization material may be deposited on the first electrode 130 constituting the deposition detection sensor 100 without being deposited on the first electrode 130, The cracks in the first electrode 130 can be prevented from being generated, and the deposition rate of the deposited thin film can be accurately measured.

Next, the vaporization amount of the deposited material is controlled based on the deposition rate of the thin film (4S).

The step 4S of adjusting the amount of vaporization is performed using the vaporization amount control unit 400 and the power supply unit 500. [ Specifically, the vaporization control unit 400 determines whether to increase or decrease the vaporization amount of the deposition material contained in the vaporization vessel 30 based on the deposition rate information supplied from the deposition rate calculation unit 300 . In addition, the vaporization control unit 400 can determine the heating temperature of the vaporization vessel 30 depending on whether the amount of vaporization is increased or decreased, and determines the amount of power to be supplied to the heating unit 40 based on the heating temperature . The power supply unit 500 may supply the amount of power supplied from the vaporization amount control unit 400 to the heating unit 40.

According to an embodiment of the present invention, since the deposition rate of the deposited thin film can be accurately measured and the vaporization amount of the deposited material can be precisely controlled based on the deposition rate, the thickness of the finally deposited thin film can be precisely controlled .

FIG. 5 is a cross-sectional view of an organic light emitting diode according to an embodiment of the present invention, which is applicable to an organic light emitting diode according to an embodiment of the present invention, which can be manufactured by applying the above-described thin film deposition method.

5, an organic light emitting device according to an embodiment of the present invention includes a substrate S, an anode, a first stack, a charge generating layer (CGL), a second stack , And a cathode (cathode).

The substrate S may be made of glass or transparent plastic.

The anode may be made of a transparent conductive material having a high conductivity and work function, for example, indium tin oxide (ITO), indium zinc oxide (IZO), SnO 2 or ZnO. However, no.

The first stack is formed on the anode to emit light of a predetermined wavelength. The first stack includes a hole injecting layer (HIL), a hole transporting layer (HTL1), a first emitting layer (EML1), and a first electron transporting layer 1; ETL1).

The hole injecting layer HIL is formed on the anode and may be formed of MTDATA (4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine), CuPc (copper phthalocyanine) or PEDOT / PSS , 4-ethylenedioxythiophene, polystyrene sulfonate), and the like, but the present invention is not limited thereto.

The first hole transporting layer HTL1 is formed on the hole injection layer HIL and is formed of TPD (N, N'-diphenyl-N, N'-bis (3-methylphenyl) -4,4'-diamine, NPD (N, N'-diphenyl benzidine), or NPB (N, N'- benzidine), and the like, but the present invention is not limited thereto.

The first light emitting layer (EML1) is formed on the first hole transport layer (HTL1). The first light emitting layer (EML1) may be a blue light emitting layer, a green light emitting layer, or a red light emitting layer.

The blue light emitting layer may be formed by doping a fluorescent blue dopant into at least one fluorescent host material selected from the group consisting of an anthracene derivative, a pyrene derivative, and a perylene derivative. However, no.

The green light emitting layer may be formed by doping a phosphorescent green dopant to a phosphorescent host material comprising a carbazole compound or a metal complex, but is not limited thereto. The carbazole-based compound may include CBP (4,4-N, N'-dicarbazole-biphenyl), CBP derivative, mCP (N, N'-dicarbazolyl-3,5-benzene) The metal complex may include ZnPBO (phenyloxazole) metal complex or ZnPBT (phenylthiazole) metal complex.

The red light emitting layer may be formed by doping a phosphorescent host material red dopant comprising a carbazole compound or a metal complex, but is not limited thereto. The red dopant may be a metal complex of iridium (Ir) or platinum (Pt), but is not limited thereto.

The first electron transport layer ETL1 is formed on the first emission layer EML1 and is formed of oxadiazole, triazole, phenanthroline, benzoxazole, benzothiazole, benzothiazole, and the like, but the present invention is not limited thereto.

The charge generation layer (CGL) is formed between the first stack and the second stack to balance charge between the first stack and the second stack. The charge generation layer CGL is formed on the n-type charge generation layer (n-CGL) and the n-type charge generation layer (n-CGL) And a p-type charge generation layer (p-CGL) formed adjacent to the second stack.

The n-type charge generation layer (n-CGL) injects elelctron into the first stack. The n-type charge generation layer (n-CGL) may include an alkali metal such as Li, Na, K, or Cs, Ba, or an organic layer doped with an alkaline earth metal such as Ra.

The p-type charge generation layer (p-CGL) injects holes into the second stack, and dopants may be doped in an organic material having a hole transporting ability.

The second stack is formed on the charge generation layer (CGL) to emit light of a predetermined wavelength. The second stack may include a second hole transport layer (HTL2), a second emission layer (EML2), a second electron transport layer (ETL2), and an electron injection layer Layer (EIL).

The second hole transporting layer HTL2 is formed on the charge generating layer CGL and is formed of TPD (N, N'-diphenyl-N, N'-bis (3-methylphenyl) -4,4'-diamine, NPD (N, N'-diphenyl benzidine), or NPB (N, N'- benzidine), and the like, but the present invention is not limited thereto.

The second light emitting layer (EML2) is formed on the second hole transporting layer (HTL2). The second light emitting layer (EML2) may be a blue light emitting layer, a green light emitting layer, or a red light emitting layer. The first light emitting layer (EML1) and the second light emitting layer (EML2) may be formed of a blue light emitting layer and the other one may be an orange light emitting layer. Accordingly, the organic light emitting device according to an exemplary embodiment of the present invention may include a white light As shown in FIG.

The second electron transport layer ETL2 is formed on the second emission layer EML2 and may be formed of oxadiazole, triazole, phenanthroline, benzoxazole, benzothiazole, benzothiazole, and the like, but the present invention is not limited thereto.

The electron injection layer EIL is formed on the second electron transport layer ETL2 and may be formed of lithium fluoride (LiF) or lithium quinolate (LiQ), but is not limited thereto.

The cathode is formed on the second stack and is made of a metal having a low work function such as aluminum (Al), silver (Ag), magnesium (Mg), lithium (Li) But it is not necessarily limited thereto.

An organic light emitting diode according to an embodiment of the present invention includes an anode, a hole injection layer (HIL), a first hole transport layer (HTL1), a first emission layer (EML1), a second hole transport layer The first electron transport layer ETL1, the n-type charge generation layer n-CGL, the p-type charge generation layer p-CGL, the second hole transport layer HTL2, the second light emitting layer EML2, ETL2), an electron injection layer (EIL), and a cathode (cathode).

At this time, the anode, the hole injection layer (HIL), the first hole transporting layer (HTL1), the first light emitting layer (EML1), the first electron transporting layer (ETL1) (EIL), the second electron transport layer (ETL), the second electron transport layer (ETL), the second electron transport layer (ETL), and the second electron transport layer (ETL) And the cathode may be formed by applying the thin film deposition method of FIG. 4 described above.

Particularly, as described above, since cracks are increased in the first electrode 130 constituting the deposition detection sensor 100 when an inorganic material or a metal material is deposited, the anode containing the metal material, the n It is preferable to apply the thin film deposition method according to FIG. 4 to the step of forming at least one of the n-type charge generation layer (n-CGL), the electron injection layer (EIL), and the cathode.

However, the present invention is not limited to the method of manufacturing an organic light emitting device having a plurality of stacks such as an organic light emitting device including a first stack, a charge generating layer, and a second stack. And a method of manufacturing an organic light emitting device composed of one stack. That is, the present invention includes a method of sequentially forming an anode, a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a cathode on a substrate to form an organic light emitting device.

FIG. 6A is a photograph of the deposition detection sensor 100 of FIG. 2, in which lithium is deposited in a state where the protective layer 160 is not formed, FIG. 6B is a cross- And Li (Li) is deposited on the sensor 100. FIG.

As can be seen from FIG. 6A, lithium (Li) is deposited on the first electrode made of gold (Au). In this case, it can be seen that cracks are generated in the gold (Au).

6B, lithium (Li) is deposited on a protective layer made of indium (In) on a first electrode made of gold (Au). In this case, cracks are not generated in gold Able to know.

Although the embodiments of the present invention have been described in detail with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those embodiments and various changes and modifications may be made without departing from the scope of the present invention. . Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of the same should be interpreted as being included in the scope of the present invention

10: process chamber 20: substrate support
30: vaporization vessel 40: heating section
100: Deposition detection sensor 110: Quartz crystal
120: first adhesive layer 130: first electrode
140: second adhesive layer 150: second electrode
160: Protection layer 200: Oscillator
300: deposition rate calculation unit 400: vaporization rate control unit
500: power supply unit

Claims (11)

Quartz crystal;
A first electrode provided on one surface of the quartz crystal;
A second electrode provided on the other surface of the quartz crystal; And
And a protective layer provided on the first electrode to prevent a deposition material from being deposited on the first electrode. The method according to claim 1,
Wherein the protective layer covers the surface of the first electrode exposed to the outside. The method according to claim 1,
Wherein the protective layer is made of indium. The method according to claim 1,
A first adhesive layer provided between the quartz crystal and the first electrode; And
And a second adhesive layer disposed between the quartz crystal and the second electrode. A deposition detection sensor;
An oscillator for supplying a vibration wave of a predetermined frequency to the deposition detection sensor; And
And a deposition rate calculation unit for calculating a deposition rate by receiving a frequency from the deposition detection sensor,
Wherein the deposition detection sensor comprises the deposition detection sensor according to any one of claims 1 to 4. A process chamber;
A substrate support disposed within the process chamber;
A vaporization vessel disposed in the process chamber so as to face the substrate support and containing an evaporation material therein;
A heating unit for heating the vaporization vessel; And
And a deposition rate measuring device for measuring a deposition rate of the deposition material,
Wherein the deposition rate measuring apparatus comprises the deposition rate measuring apparatus according to the fifth aspect of the present invention. The method according to claim 6,
A vaporization amount control unit for receiving the deposition rate information measured by the deposition rate measurement apparatus and controlling the vaporization amount of the deposition material accommodated in the vaporization vessel; And
And a power supply unit for supplying power to the heating unit based on the vaporization amount change information supplied from the vaporization amount control unit. Placing a substrate on a substrate support;
Heating the vaporization vessel containing the deposition material to vaporize the deposition material to deposit on the substrate;
Measuring a deposition rate of a deposition material deposited on the substrate; And
And adjusting a vaporization amount of the deposition material based on the measured deposition rate,
The deposition rate of the deposition material is measured by supplying a vibration wave having a preset frequency to the deposition detection sensor in the oscillator, receiving the frequency information of the deposition detection sensor in the deposition rate calculation unit, And a step of calculating a speed,
The deposition detection sensor may include a quartz crystal, a first electrode provided on one side of the quartz crystal, a second electrode provided on the other side of the quartz crystal, and an evaporation material disposed on the first electrode, And a protective layer for preventing deposition on the substrate. 9. The method of claim 8,
Wherein the step of controlling the vaporization amount of the evaporation material determines whether or not the evaporation amount of the evaporation material accommodated in the evaporation vessel is increased or decreased based on the measured evaporation rate information, Determining a temperature and determining an amount of power to be supplied to the heating section based on the determined heating temperature. A step of forming an anode on a substrate;
Forming a hole injection layer on the anode;
Forming a hole transport layer on the hole injection layer;
Forming a light emitting layer on the hole transporting layer;
Forming an electron transport layer on the light emitting layer;
Forming an electron injection layer on the electron transport layer; And
And a step of forming a cathode on the electron injection layer,
At least one of the anode, the hole injecting layer, the hole transporting layer, the light emitting layer, the electron transporting layer, the electron injecting layer, and the cathode is formed by the thin film deposition method according to the above- . 11. The method of claim 10,
Further comprising a step of forming an n-type charge generation layer and a step of forming a p-type charge generation layer between the step of forming the electron transport layer and the step of forming the electron injection layer, The method of manufacturing an organic light emitting diode according to claim 1,

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