KR102253290B1 - Deposition Dectecting Sensor and depositing velocity measuring device and thin film depositing apparatus - Google Patents

Abstract

The present invention is a quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent the deposition material from being deposited on the first electrode.

Description

Deposition Dectecting Sensor and depositing velocity measuring device and thin film depositing apparatus using the same

The present invention relates to a thin film deposition apparatus, and more particularly, to a deposition rate measuring apparatus for measuring the deposition rate of a thin film.

Thin film deposition equipment is widely used in the manufacture of semiconductors and display devices. Such thin film deposition equipment may be classified into a sputtering equipment, a chemical vapor deposition equipment, and an evaporation equipment according to a material to be deposited and a method of deposition.

Hereinafter, a conventional thin film deposition equipment will be described with reference to the drawings.

1A is a schematic diagram of a conventional thin film deposition equipment, which relates to a vaporization equipment.

As can be seen from FIG. 1A, the conventional thin film deposition equipment includes a process chamber 1, a vaporization vessel 2, and a deposition detection sensor 3.

The vaporization vessel 2 is located in the process chamber 1. The material to be deposited is accommodated in the vaporization container 2, so when the vaporization container 2 is heated, the material vaporizes to form a thin film on the substrate S fixed at a position facing the vaporization container 2 Is deposited.

The deposition detection sensor 3 is positioned in the process chamber 1 to detect a material vaporized in the vaporization container 2. The material vaporized in the vaporization container 2 is deposited on the deposition detection sensor 3, and accordingly, whether or not a thin film is deposited can be detected.

1B is a cross-sectional view of a conventional deposition sensor for detecting thin film deposition.

As can be seen from FIG. 1B, the conventional deposition detection sensor 3 includes a quartz crystal 3a, a first electrode 3b, and a second electrode 3c.

When an external vibration wave is supplied, the quartz crystal 3a constantly vibrates at a frequency corresponding to the frequency of the vibration wave. The first electrode 3b is formed on one surface of the quartz crystal 3a, and the second electrode 3c is formed on the other surface of the quartz crystal 3a.

Since the frequency of the quartz crystal 3a changes before and after the deposition of the material, the deposition of the material can be detected through the change in the frequency of the quartz crystal 3a, and the quartz crystal 3a It is possible to calculate the deposition rate of the material through the change in frequency of. When the deposition rate of the material to be deposited is calculated as described above, there is an advantage in that the thickness of the finally obtained thin film can be precisely controlled.

In such a conventional deposition detection sensor 3, a material is deposited on the surface of the first electrode 3b, and accordingly, the frequency of the quartz crystal 3a changes, thereby calculating a deposition rate of the deposition material.

However, the first electrode 3b is mainly made of gold (Au), and the first electrode 3b made of gold has a disadvantage that cracks easily occur when a material is deposited on its surface. In particular, when the deposition material is an inorganic material or a metal material, the occurrence of cracks in the first electrode 3b increases. In this way, when a crack occurs on the surface of the first electrode 3b, the frequency of the quartz crystal 3a is affected by the crack and changes unevenly, and accordingly, the thickness of the deposited thin film can be precisely controlled. There is no problem.

The present invention has been devised to solve the above-described conventional problem, and the present invention is a deposition detection sensor capable of accurately measuring the deposition rate of a thin film by preventing cracks occurring in the first electrode, and a deposition rate measuring apparatus using the same. It aims to provide thin film deposition equipment. In addition, an object of the present invention is to provide a thin film deposition method using the thin film deposition equipment and a method of manufacturing an organic light emitting device using the same.

The present invention to achieve the above object, quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent the deposition material from being deposited on the first electrode.

The present invention also includes a deposition detection sensor; An oscillator supplying a vibration wave of a preset frequency to the deposition detection sensor; And a deposition rate calculator configured to calculate a deposition rate by receiving a frequency from the deposition detection sensor, wherein the deposition detection sensor includes: a quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent the deposition material from being deposited on the first electrode.

The present invention also includes a process chamber; A substrate support provided in the process chamber; A vaporization container disposed in the process chamber to face the substrate support and receiving a deposition material therein; A heating unit for heating the vaporization container; And a deposition rate measurement device for measuring a deposition rate at which the deposition material is deposited, wherein the deposition rate measurement device includes a deposition detection sensor; An oscillator supplying a vibration wave of a preset frequency to the deposition detection sensor; And a deposition rate calculator configured to calculate a deposition rate by receiving a frequency from the deposition detection sensor, wherein the deposition detection sensor includes: a quartz crystal; A first electrode provided on one surface of the quartz crystal; A second electrode provided on the other surface of the quartz crystal; And a protective layer provided on the first electrode to prevent the deposition material from being deposited on the first electrode.

The present invention also includes a step of mounting a substrate on a substrate support; Heating a vaporization container containing a vaporization material to vaporize the vaporization material to deposit on the substrate; Measuring a deposition rate of a deposition material deposited on the substrate; And a process of controlling an amount of vaporization of the deposition material based on the measured deposition rate, wherein the process of measuring the deposition rate of the deposition material includes a vibration wave having a preset frequency from an oscillator to a deposition detection sensor, A process of calculating the deposition rate of the deposition material through a change in frequency by receiving the frequency information of the deposition detection sensor from the deposition rate calculation unit, and the deposition detection sensor is provided on a quartz crystal and one surface of the quartz crystal. A thin film deposition method comprising a first electrode formed, a second electrode provided on the other surface of the quartz crystal, and a protective layer provided on the first electrode to prevent deposition of a deposition material on the first electrode Provides.

The present invention also provides a process for forming an anode on a substrate; Forming a hole injection layer on the anode; Forming a hole transport layer on the hole injection layer; Forming a light emitting layer on the hole transport layer; Forming an electron transport layer on the emission layer; Forming an electron injection layer on the electron transport layer; And forming a cathode on the electron injection layer, wherein at least one of the anode, the hole injection layer, the hole transport layer, the emission layer, the electron transport layer, the electron injection layer, and the cathode, Mounting the substrate on the substrate support; Heating a vaporization container containing a vaporization material to vaporize the vaporization material to deposit on the substrate; Measuring a deposition rate of a deposition material deposited on the substrate; And a process of controlling an amount of vaporization of the deposition material based on the measured deposition rate, wherein the process of measuring the deposition rate of the deposition material includes a vibration wave having a preset frequency from an oscillator to a deposition detection sensor, A process of calculating the deposition rate of the deposition material through a change in frequency by receiving the frequency information of the deposition detection sensor from the deposition rate calculation unit, and the deposition detection sensor is provided on a quartz crystal and one surface of the quartz crystal. A thin film deposition method comprising a first electrode formed, a second electrode provided on the other surface of the quartz crystal, and a protective layer provided on the first electrode to prevent deposition of a deposition material on the first electrode It provides a method of manufacturing an organic light emitting device formed by.

According to the present invention as described above has the following effects.

According to an embodiment of the present invention, since the deposition detection sensor has a protective layer formed on the first electrode, the vaporizing material is not deposited on the first electrode but is deposited on the protective layer. It can prevent the problem of generating cracks. Accordingly, the deposition rate of the deposited thin film can be accurately measured, and the final thickness of the deposited thin film can be more accurately controlled based on the measured deposition rate of the thin film.

1A is a schematic diagram of a conventional thin film deposition equipment, and FIG. 1B is a cross-sectional view of a conventional deposition detection sensor for detecting thin film deposition.
2 is a schematic diagram of an apparatus for measuring a deposition rate according to an embodiment of the present invention.
3 is a schematic diagram of a thin film deposition equipment according to an embodiment of the present invention.
4 is a flowchart of a thin film deposition method according to an embodiment of the present invention.
5 is a cross-sectional view of an organic light-emitting device according to an embodiment of the present invention.
6A is a photograph of a case in which lithium (Li) is deposited in a state in which a protective layer is not formed in the deposition detection sensor, and FIG. 6B is a case in which lithium (Li) is deposited in a state in which a protective layer is formed in the deposition detection sensor. It's a picture.

Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments make the disclosure of the present invention complete, and the general knowledge in the technical field to which the present invention pertains. It is provided to completely inform the scope of the invention to the possessor, and the invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. The same reference numerals refer to the same elements throughout the specification. In addition, in describing the present invention, when it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When'include','have', and'consist of' mentioned in the present specification are used, other parts may be added unless'only' is used. In the case of expressing the constituent elements in the singular, it includes the case of including the plural unless specifically stated otherwise.

In interpreting the constituent elements, it is interpreted as including an error range even if there is no explicit description.

In the case of a description of the positional relationship, for example, if the positional relationship of two parts is described as'upper','upper of','lower of','next to','right' Or, unless'direct' is used, one or more other parts may be located between the two parts.

In the case of a description of a temporal relationship, for example, when a temporal predecessor relationship is described as'after','following','after','before', etc.,'right' or'direct' It may also include cases that are not continuous unless this is used.

First, second, etc. are used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, the first component mentioned below may be a second component within the technical idea of the present invention.

Each of the features of the various embodiments of the present invention can be partially or entirely combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be independently implemented with respect to each other or can be implemented together in an association relationship. May be.

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

2 is a schematic diagram of an apparatus for measuring a deposition rate according to an embodiment of the present invention.

As can be seen from FIG. 2, the apparatus for measuring a deposition rate according to an embodiment of the present invention includes a deposition detection sensor 100, an oscillator 200, and a deposition rate calculation unit 300.

The deposition detection sensor 100 detects the deposition of the material so as to measure the deposition thickness and the deposition rate of the deposited material. Such a deposition detection sensor 100 includes a quartz crystal 110, a first adhesive layer 120, a first electrode 130, a second adhesive layer 140, a second electrode 150, and a protective layer. It is made including 160.

When an external vibration wave is supplied, the quartz crystal 110 constantly vibrates at a frequency corresponding to the frequency of the vibration wave. The deposition detection sensor 100 according to an embodiment of the present invention detects the deposition of a material through a change in vibration of the quartz crystal 110. That is, since the frequency of the quartz crystal 110 changes before and after the deposition of the material, the deposition of the material can be detected through the change in the frequency of the quartz crystal 110, and the quartz crystal ( 110), it is possible to calculate the deposition thickness and deposition rate of the material.

The first adhesive layer 120 is formed on one surface of the quartz crystal 110, specifically, on a lower surface of the quartz crystal 110 close to a direction in which a material is deposited. Such a first adhesive layer 120 is formed between the quartz crystal 110 and the first electrode 130 to improve adhesion between the quartz crystal 110 and the first electrode 130. The first adhesive layer 120 may be formed of a conductive material, for example, may be formed of chromium (Cr) or titanium (Ti).

The first electrode 130 is formed on one surface of the first adhesive layer 120, specifically, on a lower surface of the first adhesive layer 120 close to a direction in which a material is deposited. The first electrode 130 may be made of a conductive material, and for example, may be made of silver (Ag) or gold (Au).

The second adhesive layer 140 is formed on the other surface of the quartz crystal 110, specifically on the upper surface of the quartz crystal 110 far from a direction in which a material is deposited. The second adhesive layer 140 is formed between the quartz crystal 110 and the second electrode 150 to improve adhesion between the two. The second adhesive layer 140 may be formed of a conductive material, for example, may be formed of chromium or titanium.

The second electrode 150 is formed on one surface of the second adhesive layer 140, specifically on an upper surface of the second adhesive layer 140 far from a direction in which a material is deposited. The second electrode 150 may be made of a conductive material, and may be made of silver or gold, for example.

The protective layer 160 is formed on one surface of the first electrode 130, specifically, on a lower surface of the first electrode 130 close to a direction in which a material is deposited.

The protective layer 160 serves to prevent the occurrence of cracks in the first electrode 130 by preventing a material from being deposited on the lower surface of the first electrode 130. That is, a material is deposited on one surface of the protective layer 160, more specifically, on the lower surface of the protective layer 160.

Accordingly, the protective layer 160 may be formed to cover the entire lower surface of the first electrode 130. However, when the outer case of the deposition detection sensor 100 is formed in the lower edge area of the first electrode 130, since the edge of the first electrode 130 is not exposed to the outside, in this case The protective layer 160 may be formed only on a lower surface of the first electrode 130 exposed to the outside except for the edge of the first electrode 130 that is covered by the outer case.

The protective layer 160, which serves to prevent cracking of the first electrode 130, has conductivity, has good adhesion to the first electrode 130, and does not generate cracks when the material is deposited. It is made of a material, and examples thereof include indium (In), tin (Sn), zinc (Zn), or aluminum (Al). Indium (In) is conductive, has good adhesion to silver or gold, and has soft properties, so no cracks occur when the material is deposited on its surface, and its melting point is 157°C, so it can be easily deposited through the deposition process. Since there is an advantage, it is preferable as a material of the protective layer 160.

The oscillator 200 supplies a vibration wave of a preset frequency to the deposition detection sensor 100 so that the quartz crystal 110 of the deposition detection sensor 100 vibrates at a frequency corresponding to the frequency of the vibration wave. do. The oscillator 200 may be connected to the second electrode 150 of the deposition detection sensor 100, but is not limited thereto. When the oscillator 200 is connected to the second electrode 150 of the deposition detection sensor 100, the vibration wave supplied from the oscillator 200 passes through the second electrode 150 and the second adhesive layer 140 Thus, it is transferred to the quartz crystal 110.

The deposition rate calculation unit 300 receives information on the frequency of the quartz crystal 110 from the deposition detection sensor 100 and calculates the deposition rate of the deposited material. The quartz crystal 110 of the deposition detection sensor 100 vibrates at a frequency corresponding to the frequency of the vibration wave supplied from the oscillator 200. At this time, when a material is deposited on the deposition detection sensor 100, more specifically, the protective layer 160 of the deposition detection sensor 100, the frequency of the quartz crystal 110 is changed, and such a change in frequency Through this, the deposition thickness and deposition rate of the deposition material can be calculated.

Accordingly, the deposition rate calculation unit 300 receives in real time the amount of change in the frequency of the quartz crystal 110 that changes as the material is deposited, and calculates the deposition thickness and the deposition rate of the material based on the amount of change in the frequency. It is done. In order to calculate such a deposition thickness and a deposition rate, the deposition rate calculation unit 300 has preset reference information for a change in the frequency of the quartz crystal 110 according to the thickness at which the material is deposited for each material.

As described above, according to an embodiment of the present invention, since the deposition detection sensor 100 includes the protective layer 160 formed on the first electrode 130, the material to be vaporized is the first electrode 130 ) To prevent a problem of generating a crack in the first electrode 130. Accordingly, the deposition rate of the deposited thin film can be accurately measured, and the final thickness of the deposited thin film can be more accurately controlled based on the measured deposition rate of the thin film.

In particular, when the deposition material is an inorganic material or a metal material, the occurrence of cracks in the first electrode 130 increases. Accordingly, the deposition detection sensor 100 according to an embodiment of the present invention may be particularly usefully applied when depositing an inorganic material or a metal material.

3 is a schematic diagram of a thin film deposition equipment according to an embodiment of the present invention.

As can be seen from FIG. 3, the thin film deposition equipment according to an embodiment of the present invention includes a process chamber 10, a substrate support 20, a vaporization container 30, a heating unit 40, and a deposition detection sensor 100. , An oscillator 200, a deposition rate calculation unit 300, a vaporization amount control unit 400, and a power supply unit 500.

The process chamber 10 provides a reaction space in which a deposition process is performed. The process chamber 10 may be connected to a vacuum pump (not shown) to maintain the inside of the process chamber 10 in a vacuum.

The substrate support part 20 is positioned inside the process chamber 10 to support the substrate S while fixing it. The substrate support 20 fixes the substrate S in a manner known in the art such as a mechanical method such as a clamp, an adsorption method, or an electrostatic method. The substrate support 20 may be configured to be rotatable.

The vaporization container 30 is located inside the process chamber 10 while facing the substrate support 20. A material to be deposited on the substrate (S) is accommodated in the vaporization container 30, and the received material is vaporized while being heated in the vaporization container 30, and accordingly, on the substrate (S). Is deposited. The vaporization container 30 may be changed into various forms known in the art.

The heating unit 40 serves to heat the vaporization container 30. The heating unit 40 may be formed of a heater such as a heating wire surrounding the outer circumferential surface of the vaporization container 30, but is not limited thereto.

Since the deposition rate measurement device consisting of the deposition detection sensor 100, the oscillator 200, and the deposition rate calculation unit 300 is the same as that of FIG. 2, repeated descriptions are omitted and only items not described above will be described. It should be.

The deposition detection sensor 100 senses that the material contained in the vaporization container 30 vaporizes. Accordingly, the deposition detection sensor 100 is disposed inside the process chamber 10, and more specifically, is positioned between the vaporization container 30 and the substrate support 20. In particular, the deposition detection sensor 100 is located in a path where the material vaporizes, and is formed to be inclined toward the vaporization container 30 as shown, thereby facilitating the detection of vaporization of the material. have.

The oscillator 200 and the deposition rate calculation unit 300 are located outside the process chamber 10.

The vaporization amount control unit 400 receives the deposition rate information calculated by the deposition rate calculation unit 300 and controls the vaporization amount of the material contained in the vaporization container 30 based on the received deposition rate information.

For example, when the deposition rate supplied from the deposition rate calculation unit 300 is higher than a preset deposition rate, the vaporization amount control unit 400 controls the vaporization amount of the material contained in the vaporization container 30 to be reduced. . Specifically, the vaporization amount control unit 400 controls the vaporization amount of the material contained in the vaporization container 30 to be reduced by lowering the heating temperature for heating the vaporization container 30. Conversely, when the deposition rate supplied from the deposition rate calculation unit 300 is slower than a preset deposition rate, the vaporization amount control unit 400 controls the vaporization amount of the material contained in the vaporization container 30 to be increased. Specifically, the vaporization amount control unit 400 controls to increase the vaporization amount of the material contained in the vaporization container 30 by increasing the heating temperature for heating the vaporization container 30.

In this way, the vaporization amount control unit 400 determines whether to increase, decrease or maintain the vaporization amount of the vaporized material contained in the vaporization container 30 based on the vaporization rate information supplied from the vaporization rate calculation unit 300. . In addition, the vaporization amount control unit 400 may determine the heating temperature of the vaporization container 30 according to whether or not the vaporization amount is increased or decreased. In addition, the vaporization amount control unit 400 may determine the amount of power supplied to the heating unit 40 based on the determined heating temperature of the vaporization container 30.

The power supply unit 500 receives the vaporization amount increase/decrease information from the vaporization amount control unit 400 and supplies power to the heating unit 40 based on the supplied vaporization amount increase/decrease information.

For example, when information for increasing the amount of vaporization is received from the vaporization amount control unit 400, the power supply unit 500 supplies power higher than a preset power to the heating unit 40 so that the heating unit ( In 40), the vaporization vessel 30 is heated to a higher temperature. Conversely, when information for reducing the amount of vaporization is received from the vaporization amount control unit 400, the power supply unit 500 supplies power lower than a preset power to the heating unit 40 so that the heating unit 40 In to heat the vaporization vessel 30 to a lower temperature.

The power supply unit 500 may receive an amount of power to be provided to the heating unit 40 from the vaporization amount control unit 400, and in this case, the vaporization amount increase or decrease information corresponds to the amount of power.

4 is a flowchart of a thin film deposition method according to an embodiment of the present invention. Hereinafter, a thin film deposition method according to an embodiment of the present invention will be described with reference to FIGS. 2 and 3 described above in addition to FIG. 4.

First, the substrate is mounted (1S).

The step (1S) of mounting the substrate includes a step of fixing the substrate to the substrate support part 20 located inside the process chamber 10.

Next, a thin film is deposited on the substrate (2S).

The process (2S) of depositing a thin film on the substrate includes a process of vaporizing the material by heating the vaporization container 30 containing the material to be deposited by the heating unit 40.

Next, the deposition rate of the thin film is measured (3S).

The process (3S) of measuring the deposition rate of the thin film is performed using a deposition rate measurement device including a deposition detection sensor 100, an oscillator 200, and a deposition rate calculation unit 300. Specifically, the oscillator 200 supplies a vibration wave of a preset frequency to the deposition detection sensor 100, and the deposition rate calculation unit 300 receives information on the frequency of the deposition detection sensor 100 and The deposition rate of the thin film is measured through the amount of change.

In this case, according to an embodiment of the present invention, the vaporizing material is not deposited on the first electrode 130 constituting the deposition detection sensor 100, but the protective layer 160 formed on the first electrode 130. ), it is possible to prevent cracks from occurring in the first electrode 130, and accordingly, the deposition rate of the deposited thin film can be accurately measured.

Next, the vaporization amount of the deposited material is adjusted based on the measured deposition rate of the thin film (4S).

The process (4S) of controlling the amount of vaporization is performed using the vaporization amount control unit 400 and the power supply unit 500. Specifically, the vaporization amount control unit 400 determines whether to increase, decrease, or maintain the vaporization amount of the deposition material contained in the vaporization container 30 based on the deposition rate information supplied from the deposition rate calculation unit 300. . In addition, the vaporization amount control unit 400 may determine the heating temperature of the vaporization container 30 according to whether the vaporization amount is increased or decreased, and determine the amount of power supplied to the heating unit 40 based on the heating temperature. I can. The power supply unit 500 may supply the amount of power supplied from the vaporization amount control unit 400 to the heating unit 40.

As described above, according to an embodiment of the present invention, since the deposition rate of the deposited thin film can be accurately measured, and the vaporization amount of the deposited material can be accurately controlled, the thickness of the finally deposited thin film can be accurately controlled. You will be able to.

5 is a cross-sectional view of an organic light-emitting device according to an embodiment of the present invention, which is for an organic light-emitting device according to an embodiment of the present invention that can be manufactured by applying the above-described thin film deposition method.

As can be seen from FIG. 5, the organic light emitting device according to an embodiment of the present invention includes a substrate S, an anode, a first stack, a charge generating layer (CGL), and a second stack. , And a cathode.

The substrate S may be made of glass or transparent plastic.

The anode may be made of a transparent conductive material having high conductivity and work function, for example, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), SnO2, or ZnO, but it is not necessarily limited thereto. no.

The first stack is formed on the anode to emit light having a predetermined wavelength. The first stack includes a hole injection layer (HIL), a first hole transport layer (HTL1), a first emission layer (EML1), and a first electron transporting layer (EML1). 1; ETL1).

The hole injection layer (HIL) is formed on the anode, and MTDATA (4,4',4"-tris(3-methylphenylphenylamino)triphenylamine), CuPc (copper phthalocyanine) or PEDOT/PSS (poly(3) ,4-ethylenedioxythiphene, polystyrene sulfonate), etc., but is not limited thereto.

The first hole transport layer (HTL1) is formed on the hole injection layer (HIL), and TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-bi-phenyl) -4,4'-diamine), NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), or NPB (N,N'-di(naphthalen-1-yl)-N,N'-diphenyl- benzidine) or the like, but is not limited thereto.

The first emission layer EML1 is formed on the first hole transport layer HTL1. The first emission layer EML1 may be formed of a blue emission layer, a green emission layer, or a red emission layer.

The blue light-emitting layer may be formed by doping a fluorescent blue dopant on at least one fluorescent host material selected from the group consisting of an anthracene derivative, a pyrene derivative, and a perylene derivative, but is limited thereto. no.

The green light-emitting layer may be formed by doping a phosphorescent green dopant on a phosphorescent host material made of a carbazole-based compound or a metal complex, but is not limited thereto. The carbazole-based compound may include CBP (4,4-N,N'-dicarbazole-biphenyl), CBP derivative, mCP (N,N'-dicarbazolyl-3,5-benzene) or mCP derivative, and the like, The metal complex may include a phenyloxazole (ZnPBO) metal complex or a phenylthiazole (ZnPBT) metal complex.

The red light-emitting layer may be formed by doping a phosphorescent host material red dopant made of a carbazole-based compound or a metal complex, but is not limited thereto. The red dopant may be formed of a metal complex of iridium (Ir) or platinum (Pt), but is not limited thereto.

The first electron transport layer ETL1 is formed on the first emission layer EML1, and includes oxadiazole, triazole, phenanthroline, benzoxazole, or benzthiazole (benzthiazole) or the like, but is not necessarily limited thereto.

The charge generation layer CGL is formed between the first stack and the second stack and serves to balance charge between the first stack and the second stack. The charge generation layer CGL is formed on the first stack and is disposed on the n-type charge generation layer (n-CGL) and the n-type charge generation layer (n-CGL) adjacent to the first stack. It is formed and includes a p-type charge generation layer (p-CGL) positioned adjacent to the second stack.

The n-type charge generation layer (n-CGL) serves to inject electrons into the first stack, and an alkali metal such as Li, Na, K, or Cs, or Mg, Sr, or It may be made of an organic layer doped with an alkaline earth metal such as Ba or Ra.

The p-type charge generation layer p-CGL serves to inject holes into the second stack, and may be formed by doping an organic material having hole transport capability with a dopant.

The second stack is formed on the charge generation layer CGL to emit light having a predetermined wavelength. Such a second stack includes a second hole transporting layer 2 (HTL2), a second emitting layer 2 (EML2), a second electron transporting layer 2 (ETL2), and an electron injection layer. Layer; EIL).

The second hole transport layer (HTL2) is formed on the charge generation layer (CGL), and TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-bi-phenyl) -4,4'-diamine), NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), or NPB (N,N'-di(naphthalen-1-yl)-N,N'-diphenyl- benzidine) or the like, but is not limited thereto.

The second emission layer EML2 is formed on the second hole transport layer HTL2. The second emission layer EML2 may be formed of a blue emission layer, a green emission layer, or a red emission layer. In some cases, one of the first emission layer EML1 and the second emission layer EML2 is formed of a blue emission layer and the other is formed of an orange emission layer. It may be configured to emit light.

The second electron transport layer ETL2 is formed on the second emission layer EML2, and is oxadiazole, triazole, phenanthroline, benzoxazole, or benzthiazole (benzthiazole) or the like, but is not necessarily limited thereto.

The electron injection layer EIL is formed on the second electron transport layer ETL2 and may be formed of lithium fluoride (LiF) or lithium quinolate (LiQ), but is not limited thereto.

The cathode is formed on the second stack and has a low work function, such as aluminum (Al), silver (Ag), magnesium (Mg), lithium (Li), or calcium (Ca). It can be made of, but is not necessarily limited thereto.

The organic light emitting device according to an exemplary embodiment of the present invention includes an anode, a hole injection layer HIL, a first hole transport layer HTL1, and a first emission layer EML1 on the substrate S. First electron transport layer (ETL1), n-type charge generation layer (n-CGL), p-type charge generation layer (p-CGL), second hole transport layer (HTL2), second emission layer (EML2), second electron transport layer ( ETL2), the electron injection layer (EIL), and the cathode (Cathode) can be manufactured through a process of sequentially forming.

At this time, the anode, the hole injection layer (HIL), the first hole transport layer (HTL1), the first emission layer (EML1), the first electron transport layer (ETL1), the n-type charge generation layer (n -CGL), the p-type charge generation layer (p-CGL), the second hole transport layer (HTL2), the second emission layer (EML2), the second electron transport layer (ETL2), the electron injection layer (EIL), And at least one of the cathodes may be formed by applying the thin film deposition method according to FIG. 4 described above.

In particular, since the occurrence of cracks increases in the first electrode 130 constituting the deposition detection sensor 100 when depositing an inorganic material or a metal material as described above, the anode including a metal material, the n It is preferable to apply the thin film deposition method according to FIG. 4 to the process of forming at least one of the type charge generation layer (n-CGL), the electron injection layer (EIL), and the cathode.

Meanwhile, the present invention is not necessarily limited to a method of manufacturing an organic light-emitting device having a plurality of stacks, such as an organic light-emitting device composed of a first stack, a charge generation layer, and a second stack, and does not include the charge generation layer. It also includes a method of manufacturing an organic light-emitting device consisting of one stack. That is, the present invention includes a method of manufacturing an organic light-emitting device by sequentially forming an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode on a substrate.

FIG. 6A is a photograph of a case in which lithium (Li) is deposited in a state in which the protective layer 160 is not formed in the deposition detection sensor 100 other in FIG. This is a photograph of the case of depositing lithium (Li) on the sensor 100.

As can be seen from FIG. 6A, lithium (Li) is deposited on the first electrode made of gold (Au), and in this case, it can be seen that cracks are generated in gold (Au).

As can be seen from FIG. 6B, lithium (Li) is deposited on a protective layer made of indium (In) on the first electrode made of gold (Au), and in this case, cracks do not occur in gold (Au). Able to know.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the spirit of the present invention. . Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain the technical idea, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative and non-limiting in all respects. The scope of protection of the present invention should be interpreted by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

10: process chamber 20: substrate support
30: vaporization vessel 40: heating unit
100: deposition detection sensor 110: quartz crystal
120: first adhesive layer 130: first electrode
140: second adhesive layer 150: second electrode
160: protective layer 200: oscillator
300: deposition rate calculation unit 400: vaporization amount control unit
500: power supply

Claims (11)

Quartz crystal;
A first electrode provided on one surface of the quartz crystal;
A second electrode provided on the other surface of the quartz crystal; And
A protective layer provided on the first electrode to prevent deposition of a deposition material on the first electrode,
The first electrode is made of gold or silver, and the protective layer is a deposition detection sensor made of indium. The method of claim 1,
The protective layer is a deposition detection sensor provided to cover the surface of the first electrode exposed to the outside. delete The method of claim 1,
A first adhesive layer provided between the quartz crystal and the first electrode; And
A deposition detection sensor further comprising a second adhesive layer provided between the quartz crystal and the second electrode. Deposition detection sensor;
An oscillator supplying a vibration wave of a preset frequency to the deposition detection sensor; And
It comprises a deposition rate calculator for calculating a deposition rate by receiving a frequency from the deposition detection sensor,
The deposition detection sensor is a deposition rate measuring apparatus comprising the deposition detection sensor according to any one of claims 1, 2, or 4 described above. Process chamber;
A substrate support provided in the process chamber;
A vaporization container disposed in the process chamber to face the substrate support and receiving a deposition material therein;
A heating unit for heating the vaporization container; And
It comprises a deposition rate measuring device for measuring the deposition rate of the deposition material,
The deposition rate measurement device is a thin film deposition equipment comprising the deposition rate measurement device according to claim 5 above. The method of claim 6,
A vaporization amount control unit configured to receive information on the vaporization rate measured by the vaporization rate measuring device and control the vaporization amount of the vaporization material contained in the vaporization container; And
Thin film deposition equipment further comprising a power supply for supplying power to the heating unit based on the vaporization amount increase or decrease information supplied from the vaporization amount control unit. Mounting the substrate on the substrate support;
Heating a vaporization container containing a vaporization material to vaporize the vaporization material to deposit on the substrate;
Measuring a deposition rate of a deposition material deposited on the substrate; And
Including a process of controlling the vaporization amount of the deposition material based on the measured deposition rate,
In the process of measuring the deposition rate of the deposition material, the oscillator supplies a vibration wave of a preset frequency to the deposition detection sensor, and the deposition rate calculation unit receives the frequency information of the deposition detection sensor and deposits the deposition material through the change in frequency. It is made including the process of calculating the speed,
The deposition detection sensor includes a quartz crystal, a first electrode provided on one surface of the quartz crystal, a second electrode provided on the other surface of the quartz crystal, and a deposition material provided on the first electrode. Includes a protective layer to prevent deposition on the,
The first electrode is made of gold or silver, and the protective layer is a thin film deposition method made of indium. The method of claim 8,
The process of controlling the vaporization amount of the vaporization material determines whether or not the vaporization amount of the vaporization material accommodated in the vaporization container increases or decreases based on the measured vaporization rate information, and heating the vaporization container according to the increase or decrease of the vaporization amount. A thin film deposition method comprising the step of determining a temperature and determining an amount of power supplied to a heating unit based on the determined heating temperature. Forming an anode on the substrate;
Forming a hole injection layer on the anode;
Forming a hole transport layer on the hole injection layer;
Forming a light emitting layer on the hole transport layer;
Forming an electron transport layer on the emission layer;
Forming an electron injection layer on the electron transport layer; And
Comprising a process of forming a cathode on the electron injection layer,
At least one of the anode, the hole injection layer, the hole transport layer, the emission layer, the electron transport layer, the electron injection layer, and the cathode is formed by the thin film deposition method according to claim 9 described above. Way. The method of claim 10,
Further comprising a step of forming an n-type charge generation layer and a step of forming a p-type charge generation layer between the step of forming the electron transport layer and the step of forming the electron injection layer, wherein the n-type charge generation layer The forming process is a method of manufacturing an organic light-emitting device formed by the thin film deposition method according to claim 9.

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